JP7201805B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP7201805B2
JP7201805B2 JP2021524472A JP2021524472A JP7201805B2 JP 7201805 B2 JP7201805 B2 JP 7201805B2 JP 2021524472 A JP2021524472 A JP 2021524472A JP 2021524472 A JP2021524472 A JP 2021524472A JP 7201805 B2 JP7201805 B2 JP 7201805B2
Authority
JP
Japan
Prior art keywords
period
bias
power
plasma
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021524472A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022044216A1 (https=
Inventor
紀彦 池田
一也 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of JPWO2022044216A1 publication Critical patent/JPWO2022044216A1/ja
Application granted granted Critical
Publication of JP7201805B2 publication Critical patent/JP7201805B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32201Generating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32128Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32293Microwave generated discharge using particular waveforms, e.g. polarised waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32311Circuits specially adapted for controlling the microwave discharge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0421Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3343Problems associated with etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2021524472A 2020-08-27 2020-08-27 プラズマ処理装置 Active JP7201805B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/032428 WO2022044216A1 (ja) 2020-08-27 2020-08-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2022044216A1 JPWO2022044216A1 (https=) 2022-03-03
JP7201805B2 true JP7201805B2 (ja) 2023-01-10

Family

ID=80354908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021524472A Active JP7201805B2 (ja) 2020-08-27 2020-08-27 プラズマ処理装置

Country Status (6)

Country Link
US (1) US12009180B2 (https=)
JP (1) JP7201805B2 (https=)
KR (1) KR20220027803A (https=)
CN (1) CN114521283B (https=)
TW (1) TWI824268B (https=)
WO (1) WO2022044216A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023238235A1 (ja) * 2022-06-07 2023-12-14 株式会社日立ハイテク プラズマ処理装置
WO2024241390A1 (en) * 2023-05-19 2024-11-28 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
CN119170473B (zh) * 2023-06-19 2025-10-10 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法
CN119480597B (zh) * 2023-08-08 2025-11-11 北京北方华创微电子装备有限公司 离子能量控制系统以及控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008044633A1 (fr) 2006-10-06 2008-04-17 Tokyo Electron Limited Dispositif et procédé de gravure au plasma
JP2011198983A (ja) 2010-03-19 2011-10-06 Panasonic Corp プラズマドーピング方法
JP2014220360A (ja) 2013-05-08 2014-11-20 株式会社日立ハイテクノロジーズ プラズマ処理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947733A (ja) 1982-09-13 1984-03-17 Hitachi Ltd プラズマプロセス方法および装置
JP3658249B2 (ja) * 1998-07-31 2005-06-08 キヤノン株式会社 半導体層の製造方法、光起電力素子の製造方法及び半導体層の製造装置
JP2009193988A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法及びコンピュータ記憶媒体
WO2014174650A1 (ja) * 2013-04-26 2014-10-30 株式会社 日立ハイテクノロジーズ プラズマ処理方法
JP2014229751A (ja) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP6180799B2 (ja) * 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2015115564A (ja) 2013-12-16 2015-06-22 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP6043852B2 (ja) 2015-10-01 2016-12-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6976228B2 (ja) 2018-07-23 2021-12-08 株式会社日立ハイテク プラズマ処理装置
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008044633A1 (fr) 2006-10-06 2008-04-17 Tokyo Electron Limited Dispositif et procédé de gravure au plasma
JP2011198983A (ja) 2010-03-19 2011-10-06 Panasonic Corp プラズマドーピング方法
JP2014220360A (ja) 2013-05-08 2014-11-20 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
JPWO2022044216A1 (https=) 2022-03-03
CN114521283A (zh) 2022-05-20
TWI824268B (zh) 2023-12-01
KR20220027803A (ko) 2022-03-08
WO2022044216A1 (ja) 2022-03-03
TW202209408A (zh) 2022-03-01
CN114521283B (zh) 2025-07-29
US12009180B2 (en) 2024-06-11
US20240014007A1 (en) 2024-01-11

Similar Documents

Publication Publication Date Title
JP7201805B2 (ja) プラズマ処理装置
JP7660257B2 (ja) プラズマ処理装置、プロセッサ、制御方法、非一時的コンピュータ可読記録媒体及び電源システム
JP5822795B2 (ja) プラズマ処理装置
JP7397247B2 (ja) プラズマ処理のための制御のシステム及び方法
KR101485384B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
TWI492262B (zh) Plasma processing device and plasma processing method
CN102027810B (zh) 使用rf功率传递的时间分解调频方案以用于脉冲等离子体工艺的方法及设备
JP6491888B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP2020017565A (ja) プラズマ処理装置
JP6043852B2 (ja) プラズマ処理装置
TWI878914B (zh) 電漿處理裝置
WO2024241390A1 (en) Plasma processing apparatus and plasma processing method
KR102948851B1 (ko) 플라스마 처리 장치 및 플라스마 처리 방법
KR20260052201A (ko) 플라스마 처리 장치 및 플라스마 처리 방법
JP2012129429A (ja) プラズマ処理方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210507

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220419

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20220613

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220809

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221206

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221222

R150 Certificate of patent or registration of utility model

Ref document number: 7201805

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150