WO2022032813A1 - 液晶显示面板及液晶显示装置 - Google Patents

液晶显示面板及液晶显示装置 Download PDF

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Publication number
WO2022032813A1
WO2022032813A1 PCT/CN2020/116512 CN2020116512W WO2022032813A1 WO 2022032813 A1 WO2022032813 A1 WO 2022032813A1 CN 2020116512 W CN2020116512 W CN 2020116512W WO 2022032813 A1 WO2022032813 A1 WO 2022032813A1
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WIPO (PCT)
Prior art keywords
layer
semiconductor
substrate
liquid crystal
crystal display
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PCT/CN2020/116512
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English (en)
French (fr)
Inventor
查宝
江淼
姚江波
陈黎暄
张鑫
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Tcl华星光电技术有限公司
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Priority to US17/053,072 priority Critical patent/US11415829B2/en
Publication of WO2022032813A1 publication Critical patent/WO2022032813A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element

Definitions

  • the present application relates to the field of display technology, and in particular, to a liquid crystal display panel and a liquid crystal display device.
  • hydrogenated amorphous silicon (a-Si:H) is generally used as a photosensitive semiconductor material to form a semiconductor layer in the photosensor, and the hydrogenated amorphous silicon is easily affected by ambient light.
  • a-Si:H hydrogenated amorphous silicon
  • the ambient light is irradiated on the semiconductor layer formed of hydrogenated amorphous silicon, a leakage current will be generated in the back channel of the semiconductor layer, thereby affecting the normal use of the photosensor.
  • the semiconductor layer formed by hydrogenated amorphous silicon is easily affected by ambient light, and when the ambient light is irradiated on the semiconductor layer formed by hydrogenated amorphous silicon, it will cause the back of the semiconductor layer.
  • the channel generates leakage current, which affects the normal use of the light sensor.
  • an embodiment of the present application provides a liquid crystal display panel, and the liquid crystal display panel includes:
  • the first substrate includes a first base substrate
  • the light sensor includes a sensing transistor, the sensing transistor includes a first gate, a first semiconductor and a connection with the first a first source and drain connected to the semiconductor;
  • a color filter layer disposed on the side of the first semiconductor away from the first base substrate, the color filter layer comprising a plurality of spaced color resist blocks;
  • the color filter layer further includes a light-blocking portion located between two adjacent color blocking blocks, and the orthographic projection of the light-blocking portion on the first base substrate covers the place where the first semiconductor is located. the orthographic projection on the first base substrate.
  • the light blocking portion includes a first color resist layer and a second color resist layer arranged in layers, and the color of the first color resist layer is different from that of the second color resist layer.
  • the first color resist layer is one of a red color resist layer and a green color resist layer
  • the second color resist layer is the other of a red color resist layer and a green color resist layer .
  • the first color resist layer or the second color resist layer is integrally formed with an adjacent color resist block.
  • the thickness of the color resist block integrally formed with the first color resist layer or the second color resist layer is the same as the thickness of the light blocking portion.
  • the orthographic projection of the light blocking portion on the first base substrate overlaps the orthographic projection of the first semiconductor on the first base substrate.
  • the light sensor further includes a switch transistor including a second gate disposed on the same layer as the first gate, a second semiconductor disposed on the same layer as the first semiconductor, and a second source and drain provided in the same layer as the first source and drain;
  • a light shielding layer is disposed on the side of the second semiconductor away from the first base substrate, and a gap region is disposed between two adjacent color resist blocks, and the light shielding layer includes a corresponding light shielding layer corresponding to the gap region.
  • a light shielding block is provided, wherein the orthographic projection of the light shielding block on the first base substrate covers the orthographic projection of the second semiconductor on the first base substrate.
  • the first substrate further includes:
  • a gate insulating layer covering the first gate and the second gate, the first semiconductor and the second semiconductor are disposed on a side of the gate insulating layer away from the first base substrate , the first source and drain are disposed on the side of the first semiconductor away from the first substrate, and the second source and drain are disposed on the second semiconductor away from the first substrate on one side of the substrate;
  • a passivation layer covering the first semiconductor, the first source and drain, the second semiconductor, the second source and the drain and the gate insulating layer;
  • the color filter layer is disposed on a side of the passivation layer away from the first base substrate.
  • the second substrate includes a second base substrate, and the color filter layer is disposed on a side of the second base substrate close to the first substrate.
  • the present application further provides a liquid crystal display device, the liquid crystal display device includes a beam transmitter and a liquid crystal display panel, the beam transmitter is used to emit a projection beam of a set color; the liquid crystal display panel includes:
  • the first substrate includes a first base substrate
  • the light sensor senses the projected light beam projected by the light beam emitter on the liquid crystal display panel;
  • the light sensor includes a sensing transistor, the sensing transistor includes a first gate, a first semiconductor, and a first source and drain connected to the first semiconductor;
  • a color filter layer disposed on the side of the first semiconductor away from the first base substrate, the color filter layer comprising a plurality of spaced color resist blocks;
  • the color filter layer further includes a light-blocking portion located between two adjacent color blocking blocks, and the orthographic projection of the light-blocking portion on the first base substrate covers the place where the first semiconductor is located. the orthographic projection on the first base substrate.
  • the light blocking portion includes a first color resist layer and a second color resist layer arranged in layers, and the color of the first color resist layer is different from that of the second color resist layer.
  • the first color resist layer is one of a red color resist layer and a green color resist layer
  • the second color resist layer is the other of a red color resist layer and a green color resist layer .
  • the color of the projection beam is yellow.
  • the first color resist layer or the second color resist layer is integrally formed with an adjacent color resist block.
  • the thickness of the color resist block integrally formed with the first color resist layer or the second color resist layer is the same as the thickness of the light blocking portion.
  • the thickness of the first color resist layer and the thickness of the second color resist layer are 1 ⁇ 1.5 ⁇ m.
  • the orthographic projection of the light blocking portion on the first base substrate overlaps the orthographic projection of the first semiconductor on the first base substrate.
  • the light sensor further includes a switch transistor including a second gate disposed on the same layer as the first gate, a second semiconductor disposed on the same layer as the first semiconductor, and a second source and drain provided in the same layer as the first source and drain;
  • a light shielding layer is disposed on the side of the second semiconductor away from the first base substrate, and a gap region is disposed between two adjacent color resist blocks, and the light shielding layer includes a corresponding light shielding layer corresponding to the gap region.
  • a light shielding block is provided, wherein the orthographic projection of the light shielding block on the first base substrate covers the orthographic projection of the second semiconductor on the first base substrate.
  • the first substrate further includes:
  • a gate insulating layer covering the first gate and the second gate, the first semiconductor and the second semiconductor are disposed on a side of the gate insulating layer away from the first base substrate , the first source and drain are disposed on the side of the first semiconductor away from the first substrate, and the second source and drain are disposed on the second semiconductor away from the first substrate on one side of the substrate;
  • a passivation layer covering the first semiconductor, the first source and drain, the second semiconductor, the second source and the drain and the gate insulating layer;
  • the color filter layer is disposed on a side of the passivation layer away from the first base substrate.
  • the second substrate includes a second base substrate, and the color filter layer is disposed on a side of the second base substrate close to the first substrate.
  • the light blocking part in the color filter layer is used to filter and absorb the ambient light, and the light blocking part is formed by stacking at least two color blocking layers of different colors, which can effectively reduce the illumination intensity of the ambient light irradiated on the first semiconductor, thereby reducing the environmental impact.
  • the influence of light on the light sensor prevents ambient light from causing leakage current in the back channel of the first semiconductor, and improves the signal-to-noise ratio of the light sensor.
  • the protection of the light sensor can be realized without adding additional materials and processes, and the production cost can be saved.
  • FIG. 1 is a schematic diagram of a first structure of a liquid crystal display panel in the application
  • FIG. 2 is a schematic diagram of the transmittance of light of different wavelengths in the application on the light-blocking portion formed by stacking a red color-blocking layer and a green color-blocking layer;
  • FIG. 3 is a schematic diagram of a second structure of the liquid crystal display panel in the application.
  • FIG. 4 is a schematic diagram of a circuit structure of a light sensor in an embodiment of the present application.
  • FIG. 5 to FIG. 9 are schematic diagrams of the manufacturing process of the second substrate according to an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of a liquid crystal display device according to an embodiment of the present application.
  • liquid crystal display panel 11, first substrate; 111, first base substrate; 112, gate insulating layer; 113, passivation layer; 114, first pixel electrode; 115, first alignment film layer; 116, flat layer; 12, second substrate; 121, second base substrate; 122, second pixel electrode; 123, second alignment film layer; 13, liquid crystal layer; 14, support column; 151, sensing transistor; 151a, first gate, 151b, first semiconductor; 151c, first source and drain; 152, switching transistor; 152a, second gate, 152b, second semiconductor; 152c, second source and drain; 161, red color resist block; 162, green color blocking block; 163, blue color blocking block; 164, light blocking part; 164a, first color blocking layer; 164b, second color blocking layer; 17, light blocking block; 20, beam emitter.
  • the semiconductor layer formed by hydrogenated amorphous silicon is easily affected by ambient light.
  • the back channel of the layer generates leakage current, which affects the technical problem of the normal use of the light sensor.
  • the liquid crystal display panel 10 includes a first substrate 11 and a second substrate 12 arranged oppositely, and a liquid crystal is arranged between the first substrate 11 and the second substrate 12 layer 13 and support pillars 14, the support pillars 14 are in contact with the first substrate 11 and the second substrate 12 to provide sufficient spacing for the first substrate 11 and the second substrate 12;
  • the first substrate 11 It can be an array substrate, and the second substrate 12 can be a color filter substrate.
  • the liquid crystal display panel 10 further includes a photosensor disposed on the first substrate 11, the first substrate 11 includes a first base substrate 111, and the photosensor is disposed on the first base substrate 111 is close to one side of the second substrate 12 .
  • the light sensor includes a sensing transistor 151 and a switching transistor 152 .
  • the sensing transistor 151 includes a first gate 151a, a first semiconductor 151b, and a first source-drain 151c disposed in sequence along a direction away from the first base substrate 111;
  • the switching transistor 152 includes a second gate 152a disposed on the same layer as the first gate 151a, a second semiconductor 152b disposed on the same layer as the first semiconductor 151b, and a second gate 152b disposed on the same layer as the first source and drain 151c. Two source and drain 152c.
  • the switch transistor 152 is used to control the opening and closing of the light sensor, the sensing transistor 151 is used to sense the projection beam projected on the liquid crystal display panel 10 , and the projection beam irradiates the sensor transistor 151
  • the control module controls the liquid crystal display panel 10 to perform corresponding operations.
  • both the preparation material of the first semiconductor 151b and the preparation material of the second semiconductor 152b may be visible light photosensitive materials, such as hydrogenated amorphous silicon.
  • the liquid crystal display panel 10 further includes a color filter layer disposed on the side of the first semiconductor 151b away from the first base substrate 111 , and the color filter layer includes a plurality of color resist blocks arranged at intervals,
  • the color filter layer includes a red color blocking block 161 , a green color blocking block 162 and a blue color blocking block 163 .
  • the color filter layer further includes a light blocking portion 164 located between two adjacent color blocking blocks, and the orthographic projection of the light blocking portion 164 on the first base substrate 111 covers the first The orthographic projection of the semiconductor 151b on the first base substrate 111 .
  • the light blocking portion 164 and the color blocking block are formed of color blocking materials, and the ambient light is filtered and absorbed by the light blocking portion 164 to reduce the illumination intensity of the ambient light irradiated on the first semiconductor 151b, thereby reducing the impact of ambient light on the first semiconductor 151b.
  • the influence of the light sensor can prevent ambient light from causing leakage current in the back channel of the first semiconductor 151b, and improve the signal-to-noise ratio of the light sensor.
  • the light-blocking portion 164 is penetrated to illuminate the first semiconductor 151b, thereby realizing light control of the liquid crystal display panel 10.
  • the light-blocking portion 164 and the color blocking block are formed at the same time, without adding additional materials and processes. The protection of the light sensor can be realized, and the production cost can be saved.
  • the light blocking portion 164 includes a first color blocking layer 164a and a second color blocking layer 164b arranged in layers, and the color of the first color blocking layer 164a is different from the color of the second color blocking layer 164b , that is, the color of the color resist material forming the first color resist layer 164a is different from the color of the color resist material forming the second color resist layer 164b, so that the ambient light can be better filtered and absorbed.
  • the light-blocking portion 164 may also be a single-layer structure, and the light-blocking portion 164 may also include three layered color blocking layers, and the colors of the three color blocking layers are different.
  • the first color resist layer 164a is one of a red color resist layer and a green color resist layer
  • the second color resist layer 164b is a red color resist layer. layer and the other of the green color resist layer.
  • FIG. 2 is a schematic diagram of the transmittance of light of different wavelengths on the light blocking portion 164 formed by stacking the red color blocking layer and the green color blocking layer.
  • the ordinate represents the transmittance
  • the abscissa represents the wavelength of light.
  • the wavelength range of the visible light that can penetrate the light blocking portion 164 in the ambient light is 570-630 nanometers. It is known to those skilled in the art that light with a wavelength range of 570-630 nanometers corresponds to yellow-orange. However, the light energy of the yellow-orange light in the ambient light is low, so that the yellow-orange light in the ambient light has less influence on the first semiconductor 151b, and the light blocking part 164 can block the ambient light except the yellow-orange light.
  • Light absorption, and the light blocking part 164 can also absorb part of the yellow light, thereby reducing the penetration rate of the yellow-orange light on the light blocking part 164, thereby effectively reducing the interference of ambient light to the light sensor, while the light emitted by the beam emitter 20
  • the set color of the projection light beam can be yellow, and the light control of the liquid crystal display panel 10 can be realized by using a yellow projection light beam with a higher intensity.
  • the first color-resist layer 164 a or the second color-resist layer 164 b is integrally formed with an adjacent color-resist block, so as to reduce the manufacturing process of the liquid crystal display panel 10 .
  • the thickness of the color blocking block integrally formed with the first color blocking layer 164a or the second color blocking layer 164b is the same as the thickness of the light blocking portion 164, so as to prevent the light blocking portion 164 from interacting with the color blocking portion 164.
  • the height difference between the resist blocks causes the film layer formed on the color resist layer to be broken.
  • the thicknesses of the red color resist blocks 161 and the green color resist blocks 162 may be 2-3 microns, the thickness of the first color resist layer 164a and the thickness of the second color resist layer 164b The thickness may be 1 ⁇ 1.5 ⁇ m, and the thickness of the blue color blocking block 163 may be larger than the thickness of the light blocking portion 164 by 0.2 ⁇ m.
  • the area of the orthographic projection of the red color blocking block 161 on the first base substrate 111 is equal to the orthographic projection area of the green color blocking block 162 on the first base substrate 111 .
  • the area and the area of the orthographic projection of the blue color resist block 163 on the first base substrate 111 are equal.
  • the orthographic projection of the first color resist layer 164 a on the first base substrate 111 overlaps with the orthographic projection of the second color resist layer 164 b on the first base substrate 111 That is, the shape of the orthographic projection of the first color resist layer 164a on the first base substrate 111 is the same as the shape of the orthographic projection of the second color resist layer 164b on the first base substrate 111 , and the area of the orthographic projection of the first color resist layer 164a on the first base substrate 111 is the same as the area of the orthographic projection of the second color resist layer 164b on the first base substrate 111 .
  • the orthographic projection of the light blocking portion 164 on the first base substrate 111 overlaps with the orthographic projection of the first semiconductor 151b on the first base substrate 111 , that is, the light blocking portion
  • the shape of the orthographic projection of the first semiconductor 151b on the first base substrate 111 is the same as that of the orthographic projection of the first semiconductor 151b on the first base substrate 111, and the light blocking portion 164 is formed on the first base substrate 111.
  • the area of the orthographic projection on the first base substrate 111 is the same as the area of the orthographic projection of the first semiconductor 151b on the first base substrate 111, so that the light source of the liquid crystal display panel 10 can be illuminated by the first semiconductor 151b.
  • the emitted light is blocked to prevent the light emitted by the light source of the liquid crystal display panel 10 from penetrating the light blocking portion 164 and affecting the normal display of the liquid crystal display panel 10 .
  • the combined projection formed by the orthographic projection of the first gate 151a on the first base substrate 111 and the orthographic projection of the first source and drain 151c on the first base substrate 111 is covered.
  • the first gate 151a and the first source and drain 151c may be made of conductive metal, and the first gate 151a and the first source and drain 151c with poor light transmittance may be used
  • the light emitted by the light source of the liquid crystal display panel 10 is shielded to prevent the light emitted by the light source of the liquid crystal display panel 10 from penetrating the light blocking portion 164 and affecting the normal display of the liquid crystal display panel 10 .
  • the first substrate 11 further includes a gate insulating layer 112 , a passivation layer 113 , a first pixel electrode 114 and a first alignment film that are sequentially disposed along a direction away from the first base substrate 111 .
  • Layer 115 a gate insulating layer 112 , a passivation layer 113 , a first pixel electrode 114 and a first alignment film that are sequentially disposed along a direction away from the first base substrate 111 .
  • the gate insulating layer 112 covers the first gate 151a and the second gate 152a, and the first semiconductor 151b and the second semiconductor 152b are disposed on the gate insulating layer 112 away from all the on one side of the first base substrate 111; the passivation layer 113 covers the first semiconductor 151b, the first source and drain 151c, the second semiconductor 152b, the second source and drain 152c and the gate The polar insulating layer 112 .
  • the second substrate 12 includes a second base substrate 121 , a second pixel electrode 122 disposed on a side of the second base substrate 121 close to the first substrate 11 , and a second pixel electrode 122 disposed on the first substrate 12 .
  • the two pixel electrodes 122 are close to the second alignment film layer 123 on one side of the first substrate 11 .
  • the color filter layer is disposed on a side of the second base substrate 121 close to the first substrate 11 .
  • the color filter layer may be disposed on the side of the second base substrate 121 close to the first substrate 11, and at this time, the second pixel electrode 122 may be disposed on the color filter layer close to the first substrate 11. on one side of the first substrate 11 .
  • the color filter layer may also be disposed on a side of the passivation layer 113 away from the first base substrate 111 .
  • the first substrate 11 further includes a flat layer 116 covering the color filter layer and the passivation layer 113 , and the first pixel electrode 114 is disposed on the flat layer 116 away from the first pixel electrode 116 .
  • a light shielding layer is disposed on the side of the second semiconductor 152b away from the first base substrate 111, and a gap area is disposed between two adjacent color resist blocks.
  • the light-shielding block 17 is correspondingly arranged in the gap area, and the orthographic projection of the light-shielding block 17 on the first base substrate 111 covers the orthographic projection of the second semiconductor 152b on the first base substrate 111 , and is arranged on the
  • the light shielding blocks 17 in the gap area can prevent light leakage between adjacent color resist blocks, and at the same time, the light shielding blocks 17 can shield the second semiconductor 152b to prevent ambient light from irradiating the second semiconductor 152b and affecting the normal use of the switching transistor 152 .
  • the light shielding layer may also be disposed on the first substrate 11 .
  • the first substrate 11 further includes a plurality of data lines arranged vertically and a plurality of scan lines arranged horizontally.
  • the first gate 151a of the sensing transistor 151 is connected to the A scan line Gate1 is electrically connected, the source of the first source-drain 151c is electrically connected to the first data line Date1, the drain of the first source-drain 151c is electrically connected to the second source of the switching transistor 152
  • the drain electrode of the drain electrode 152c is electrically connected to the first node T, the source electrode of the second source drain electrode 152c is electrically connected to the second data line Date2, and the second gate electrode 152a is electrically connected to the second scan line Gate2. connect.
  • the photosensor further includes a capacitor C, one end of the capacitor C is electrically connected to the first node T, and the other end of the capacitor C is electrically connected to the first scan line Gate1 .
  • FIG. 5 to FIG. 9 are schematic diagrams of a manufacturing process of the second substrate 12 in one embodiment.
  • light shielding blocks 17 are formed at corresponding positions on the second base substrate 121 .
  • a red color resist block 161 and a first color resist layer 164 a are formed on the second base substrate 121 by using a half-mask technique.
  • the thickness of the red color block 161 is greater than that of the first color resist layer 164 a. thickness of.
  • the green color resist block 162 on the second base substrate 121 and the second color resist layer 164b on the first color resist layer 164a are formed at one time by using a half-mask technique.
  • the first color resist layer 164a and the second color resist layer 164b form the light blocking portion 164 .
  • a blue color blocking block 163 is formed on the second base substrate 121 to form a color filter layer.
  • a second alignment film layer 123 is formed on the second pixel electrode 122 .
  • the present application further provides a liquid crystal display device.
  • the liquid crystal display device includes a light beam emitter 20 and the liquid crystal display panel 10 described in any of the above-mentioned embodiments.
  • the light beam transmitter 20 is used for emitting a projected light beam of a set color, and the light sensor in the liquid crystal display panel 10 senses the projected light beam projected by the light beam transmitter 20 on the liquid crystal display panel 10 .

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种液晶显示面板（10）及液晶显示装置，液晶显示面板（10）包括第一基板（11）和第二基板（12）；第一基板（11）的第一衬底基板（111）设置有光传感器，光传感器的传感晶体管（151）包括第一半导体（151b）；第一半导体（151b）与第一衬底基板（111）之间设置有彩膜层，彩膜层包括色阻块和挡光部分（164），挡光部分（164）在第一衬底基板（111）上的正投影覆盖第一半导体（151b）在第一衬底基板（111）上的正投影。

Description

液晶显示面板及液晶显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种液晶显示面板及液晶显示装置。
 背景技术
随着显示技术的发展，为了有效的改善光效的损失和成本的上升，将传感器集成在显示面板内成为行业内的一种趋势。
然而，采用内嵌式集成光传感器的显示面板中，由于光传感器中普遍采用氢化非晶硅（a-Si:H）作为光敏半导体材料形成半导体层，氢化非晶硅容易受到环境光的影响，特别是环境光较强的情况下，环境光照射至氢化非晶硅形成的半导体层上时会导致半导体层的背沟道产生漏电流，从而影响光传感器的正常使用。
 技术问题
现有的采用内嵌式集成光传感器的显示面板中，氢化非晶硅形成的半导体层容易受到环境光的影响，环境光照射至氢化非晶硅形成的半导体层上时会导致半导体层的背沟道产生漏电流，从而影响光传感器的正常使用。
 技术解决方案
第一方面，本申请实施例提供一种液晶显示面板，所述液晶显示面板包括：
第一基板，所述第一基板包括第一衬底基板；
与所述第一基板相对设置的第二基板；
设置于所述第一衬底基板靠近所述第二基板的一侧的光传感器，所述光传感器包括传感晶体管，所述传感晶体管包括第一栅极、第一半导体以及与所述第一半导体连接的第一源漏极；
设置于所述第一半导体远离所述第一衬底基板的一侧的彩膜层，所述彩膜层包括多个相间隔的色阻块；
其中，所述彩膜层还包括位于相邻两所述色阻块之间的挡光部分，所述挡光部分在所述第一衬底基板上的正投影覆盖所述第一半导体在所述第一衬底基板上的正投影。
在一些实施例中，所述挡光部分包括层叠设置的第一色阻层和第二色阻层，所述第一色阻层的颜色与所述第二色阻层的颜色相异。
在一些实施例中，所述第一色阻层为红色色阻层和绿色色阻层中的一者，所述第二色阻层为红色色阻层和绿色色阻层中的另一者。
在一些实施例中，所述第一色阻层或所述第二色阻层与一相邻的所述色阻块一体成型。
在一些实施例中，与所述第一色阻层或所述第二色阻层一体成型的色阻块的厚度与所述挡光部分的厚度相同。
在一些实施例中，所述挡光部分在所述第一衬底基板上的正投影与所述第一半导体在所述第一衬底基板上的正投影重叠。
在一些实施例中，所述光传感器还包括开关晶体管，所述开关晶体管包括与所述第一栅极同层设置的第二栅极、与所述第一半导体同层设置的第二半导体以及与所述第一源漏极同层设置的第二源漏极；
其中，所述第二半导体远离所述第一衬底基板的一侧上设置有遮光层，相邻两所述色阻块之间设置有间隙区，所述遮光层包括与所述间隙区对应设置的遮光块，所述遮光块在所述第一衬底基板上的正投影覆盖所述第二半导体在所述第一衬底基板上的正投影。
在一些实施例中，所述第一基板还包括：
覆盖所述第一栅极和所述第二栅极的栅极绝缘层，所述第一半导体和所述第二半导体设置于所述栅极绝缘层远离所述第一衬底基板的一侧上，所述第一源漏极设置于所述第一半导体远离所述第一衬底基板的一侧上，所述第二源漏极设置于所述第二半导体远离所述第一衬底基板的一侧上；
覆盖所述第一半导体、所述第一源漏极、第二半导体、第二源漏极以及栅极绝缘层的钝化层；
其中，所述彩膜层设置于所述钝化层远离所述第一衬底基板的一侧上。
在一些实施例中，所述第二基板包括第二衬底基板，所述彩膜层设置于所述第二衬底基板靠近所述第一基板的一侧。
第二方面，本申请还提供一种液晶显示装置，所述液晶显示装置包括光束发射器以及液晶显示面板，所述光束发射器用于发射设定颜色的投射光束；所述液晶显示面板包括：
第一基板，所述第一基板包括第一衬底基板；
与所述第一基板相对设置的第二基板；
设置于所述第一衬底基板靠近所述第二基板的一侧的光传感器，所述光传感器感测所述光束发射器投射在所述液晶显示面板上的投射光束；所述光传感器包括传感晶体管，所述传感晶体管包括第一栅极、第一半导体以及与所述第一半导体连接的第一源漏极；
设置于所述第一半导体远离所述第一衬底基板的一侧的彩膜层，所述彩膜层包括多个相间隔的色阻块；
其中，所述彩膜层还包括位于相邻两所述色阻块之间的挡光部分，所述挡光部分在所述第一衬底基板上的正投影覆盖所述第一半导体在所述第一衬底基板上的正投影。
在一些实施例中，所述挡光部分包括层叠设置的第一色阻层和第二色阻层，所述第一色阻层的颜色与所述第二色阻层的颜色相异。
在一些实施例中，所述第一色阻层为红色色阻层和绿色色阻层中的一者，所述第二色阻层为红色色阻层和绿色色阻层中的另一者。
在一些实施例中，所述投射光束的颜色为黄色。
在一些实施例中，所述第一色阻层或所述第二色阻层与一相邻的所述色阻块一体成型。
在一些实施例中，与所述第一色阻层或所述第二色阻层一体成型的色阻块的厚度与所述挡光部分的厚度相同。
在一些实施例中，所述第一色阻层的厚度和所述第二色阻层的厚度为1～1.5微米。
在一些实施例中，所述挡光部分在所述第一衬底基板上的正投影与所述第一半导体在所述第一衬底基板上的正投影重叠。
在一些实施例中，所述光传感器还包括开关晶体管，所述开关晶体管包括与所述第一栅极同层设置的第二栅极、与所述第一半导体同层设置的第二半导体以及与所述第一源漏极同层设置的第二源漏极；
其中，所述第二半导体远离所述第一衬底基板的一侧上设置有遮光层，相邻两所述色阻块之间设置有间隙区，所述遮光层包括与所述间隙区对应设置的遮光块，所述遮光块在所述第一衬底基板上的正投影覆盖所述第二半导体在所述第一衬底基板上的正投影。
在一些实施例中，所述第一基板还包括：
覆盖所述第一栅极和所述第二栅极的栅极绝缘层，所述第一半导体和所述第二半导体设置于所述栅极绝缘层远离所述第一衬底基板的一侧上，所述第一源漏极设置于所述第一半导体远离所述第一衬底基板的一侧上，所述第二源漏极设置于所述第二半导体远离所述第一衬底基板的一侧上；
覆盖所述第一半导体、所述第一源漏极、第二半导体、第二源漏极以及栅极绝缘层的钝化层；
其中，所述彩膜层设置于所述钝化层远离所述第一衬底基板的一侧上。
在一些实施例中，所述第二基板包括第二衬底基板，所述彩膜层设置于所述第二衬底基板靠近所述第一基板的一侧。
 有益效果
利用彩膜层中挡光部分对环境光进行过滤吸收，而挡光部分由至少两种不同颜色的色阻层堆叠形成，可以有效降低环境光照射至第一半导体上的光照强度，从而降低环境光对光传感器的影响，防止环境光导致第一半导体的背沟道产生漏电流，提升光传感器的信噪比，同时可以利用光束发射器发射设定颜色的投射光束实现对液晶显示面板的光控，此外，不需要新增额外的材料及工艺制程即可实现对光传感器的防护，节约生产成本。
 附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本申请中液晶显示面板的第一种结构示意图；
图2为本申请中不同波长的光在由红色色阻层和绿色色阻层堆叠形成的挡光部分上的穿透率的示意图；
图3为本申请中液晶显示面板的第二种结构示意图；
图4为本申请一实施方式中光传感器的电路结构示意图；
图5至图9为本申请一实施方式中第二基板的制备流程示意图；
图10为本申请一实施方式中液晶显示装置的结构示意图。
10、液晶显示面板；11、第一基板；111、第一衬底基板；112、栅极绝缘层；113、钝化层；114、第一像素电极；115、第一配向膜层；116、平坦层；12、第二基板；121、第二衬底基板；122、第二像素电极；123、第二配向膜层；13、液晶层；14、支撑柱；151、传感晶体管；151a、第一栅极、151b、第一半导体；151c、第一源漏极；152、开关晶体管；152a、第二栅极、152b、第二半导体；152c、第二源漏极；161、红色色阻块；162、绿色色阻块；163、蓝色色阻块；164、挡光部分；164a、第一色阻层；164b、第二色阻层；17、遮光块；20、光束发射器。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有的采用内嵌式集成光传感器的显示面板中，氢化非晶硅形成的半导体层容易受到环境光的影响，环境光照射至氢化非晶硅形成的半导体层上时会导致半导体层的背沟道产生漏电流，从而影响光传感器的正常使用的技术问题。
一种液晶显示面板，如图1所示，所述液晶显示面板10包括相对设置的第一基板11和第二基板12，所述第一基板11与所述第二基板12之间设置有液晶层13和支撑柱14，所述支撑柱14与所述第一基板11和所述第二基板12触接，以为第一基板11和第二基板12提供足够的间距；所述第一基板11可以为阵列基板，所述第二基板12可以为彩膜基板。
具体的，所述液晶显示面板10还包括设置于所述第一基板11的光传感器，所述第一基板11包括第一衬底基板111，所述光传感器设置于所述第一衬底基板111靠近所述第二基板12的一侧。
具体的，所述光传感器包括传感晶体管151和开关晶体管152。
在一实施方式中，所述传感晶体管151包括沿远离所述第一衬底基板111的方向依次设置的第一栅极151a、第一半导体151b以及第一源漏极151c；所述开关晶体管152包括与所述第一栅极151a同层设置的第二栅极152a、与所述第一半导体151b同层设置的第二半导体152b以及与所述第一源漏极151c同层设置的第二源漏极152c。
其中，所述开关晶体管152用于控制所述光传感器的启闭，所述传感晶体管151用于感测投射在所述液晶显示面板10上的投射光束，投射光束照射至传感晶体管151上时，第一半导体151b的电阻的阻值发生变化，第一半导体151b传输光感应信号给液晶显示面板10的控制模块后，控制模块控制液晶显示面板10产生相应操作。
其中，所述第一半导体151b的制备材料以及所述第二半导体152b的制备材料均可以为可见光光敏材料，如氢化非晶硅。
具体的，液晶显示面板10还包括设置于所述第一半导体151b远离所述第一衬底基板111的一侧的彩膜层，所述彩膜层包括多个相间隔设置的色阻块，所述彩膜层包括红色色阻块161、绿色色阻块162以及蓝色色阻块163。
其中，所述彩膜层还包括位于相邻两所述色阻块之间的挡光部分164，所述挡光部分164在所述第一衬底基板111上的正投影覆盖所述第一半导体151b在所述第一衬底基板111上的正投影。
需要说明的是，挡光部分164和色阻块由色阻材料形成，通过挡光部分164对环境光进行过滤吸收，降低环境光照射至第一半导体151b上的光照强度，从而降低环境光对光传感器的影响，防止环境光导致第一半导体151b的背沟道产生漏电流，提升光传感器的信噪比，同时可以利用光束发射器发射设定颜色的投射光束，设定颜色的投射光束可以穿透挡光部分164以照射至第一半导体151b上，从而实现对液晶显示面板10的光控，此外，挡光部分164和色阻块同时形成，不需要新增额外的材料及工艺制程即可实现对光传感器的防护，节约生产成本。
具体的，所述挡光部分164包括层叠设置的第一色阻层164a和第二色阻层164b，所述第一色阻层164a的颜色与所述第二色阻层164b的颜色相异，即形成所述第一色阻层164a的色阻材料的颜色与形成所述第二色阻层164b的色阻材料的颜色不同，从而可以对环境光进行更好的过滤吸收。
需要说明的是，所述挡光部分164还可以为单层结构，所述挡光部分164也可以包括三层层叠设置的色阻层，且三层色阻层的颜色均不相同。
在一实施方式中，如图1和图2所示，所述第一色阻层164a为红色色阻层和绿色色阻层中的一者，所述第二色阻层164b为红色色阻层和绿色色阻层中的另一者。
需要说明的是，如图1和图2所示，图2为不同波长的光在由红色色阻层和绿色色阻层堆叠形成的挡光部分164上的穿透率的示意图，图2中纵坐标表示穿透率，横坐标表示光的波长。
由图1和图2中可知，环境光中可以穿透挡光部分164的可见光的波长范围为570～630纳米，对于本领域技术人员可知，波长范围为570～630纳米的光对应于黄橙光，而环境光中的黄橙光的光能量较低，从而使得环境光中的黄橙光对第一半导体151b的影响较小，挡光部分164可以将环境光中除黄橙光以外的光吸收，并且挡光部分164还可以吸收部分黄光，从而降低黄橙光在挡光部分164上的穿透率，从而有效的降低环境光对光传感器的干扰，同时光束发射器20发射的投射光束的设定颜色可以为黄色，可以利用强度较大的黄色投射光束实现液晶显示面板10的光控。
在一实施方式中，所述第一色阻层164a或所述第二色阻层164b与一相邻的所述色阻块一体成型，以减少液晶显示面板10的工艺制程。
具体的，与所述第一色阻层164a或所述第二色阻层164b一体成型的色阻块的厚度与所述挡光部分164的厚度相同，以防止挡光部分164与所述色阻块之间的高度差导致形成于色阻层上的膜层产生断裂。
在一实施方式中，所述红色色阻块161和所述绿色色阻块162的厚度可以为2～3微米，所述第一色阻层164a的厚度和所述第二色阻层164b的厚度可以为1～1.5微米，所述蓝色色阻块163的厚度可以比挡光部分164的厚度大0.2微米。
在一实施方式中，所述红色色阻块161在所述第一衬底基板111上的正投影的面积与所述绿色色阻块162在所述第一衬底基板111上的正投影的面积以及所述蓝色色阻块163在所述第一衬底基板111上的正投影的面积均相等。
在一实施方式中，所述第一色阻层164a在所述第一衬底基板111上的正投影与所述第二色阻层164b在所述第一衬底基板111上的正投影重叠，即所述第一色阻层164a在所述第一衬底基板111上的正投影的形状与所述第二色阻层164b在所述第一衬底基板111上的正投影的形状相同，并且所述第一色阻层164a在所述第一衬底基板111上的正投影的面积与所述第二色阻层164b在所述第一衬底基板111上的正投影的面积相同。
具体的，所述挡光部分164在所述第一衬底基板111上的正投影与所述第一半导体151b在所述第一衬底基板111上的正投影重叠，即所述挡光部分164在所述第一衬底基板111上的正投影的形状与所述第一半导体151b在所述第一衬底基板111上的正投影的形状相同，并且所述挡光部分164在所述第一衬底基板111上的正投影的面积与所述第一半导体151b在所述第一衬底基板111上的正投影的面积相同，从而可以利用第一半导体151b对液晶显示面板10的光源发出的光线进行遮挡，避免液晶显示面板10的光源发出的光线穿透挡光部分164后影响液晶显示面板10的正常显示。
进一步的，所述第一栅极151a在所述第一衬底基板111上的正投影和所述第一源漏极151c在所述第一衬底基板111上的正投影所形成的组合投影覆盖所述挡光部分164在所述第一衬底基板111上的正投影。
需要说明的是，液晶显示面板10中，第一栅极151a和第一源漏极151c可以由导电金属制成，可以利用透光性较差的第一栅极151a和第一源漏极151c对液晶显示面板10的光源发出的光线进行遮挡，以避免液晶显示面板10的光源发出的光线穿透挡光部分164后影响液晶显示面板10的正常显示。
在一实施方式中，所述第一基板11还包括沿远离所述第一衬底基板111的方向依次设置的栅极绝缘层112、钝化层113、第一像素电极114以及第一配向膜层115。
其中，所述栅极绝缘层112覆盖所述第一栅极151a和所述第二栅极152a，所述第一半导体151b和所述第二半导体152b设置于所述栅极绝缘层112远离所述第一衬底基板111的一侧上；所述钝化层113覆盖所述第一半导体151b、所述第一源漏极151c、第二半导体152b、第二源漏极152c以及所述栅极绝缘层112。
具体的，所述第二基板12包括第二衬底基板121、设置于所述第二衬底基板121靠近所述第一基板11的一侧的第二像素电极122，以及设置于所述第二像素电极122靠近所述第一基板11的一侧的第二配向膜层123。
在一实施方式中，所述彩膜层设置于所述第二衬底基板121靠近所述第一基板11的一侧。
其中，所述彩膜层可以设置于所述第二衬底基板121靠近所述第一基板11的一侧上，此时，所述第二像素电极122可以设置于所述彩膜层靠近所述第一基板11的一侧上。
如图3所示，所述彩膜层还可以设置于所述钝化层113远离所述第一衬底基板111的一侧上。
在一实施方式中，所述第一基板11还包括覆盖所述彩膜层以及所述钝化层113的平坦层116，所述第一像素电极114设置于所述平坦层116远离所述第一衬底基板111的一侧。
具体的，所述第二半导体152b远离所述第一衬底基板111的一侧上设置有遮光层，相邻两所述色阻块之间设置有间隙区，所述遮光层包括与所述间隙区对应设置的遮光块17，所述遮光块17在所述第一衬底基板111上的正投影覆盖所述第二半导体152b在所述第一衬底基板111上的正投影，设置于间隙区的遮光块17可以避免相邻色阻块之间产生漏光，同时遮光块17可以对第二半导体152b进行遮挡，防止环境光照射至第二半导体152b上影响开关晶体管152的正常使用。
图1和图3中仅示意了遮光层设置于所述第二基板12上的情况，需要说明的是，遮光层还可以设置于所述第一基板11上。
如图4所示，具体的，所述第一基板11还包括沿竖向设置的多条数据线以及沿横向设置的多条扫描线，所述传感晶体管151的第一栅极151a与第一扫描线Gate1电连接，所述第一源漏极151c的源极与第一数据线Date1电连接，所述第一源漏极151c的漏极与所述开关晶体管152的所述第二源漏极152c的漏极电连接于第一节点T，所述第二源漏极152c的源极与第二数据线Date2电连接，所述第二栅极152a与所述第二扫描线Gate2电连接。
在一实施方式中，所述光传感器还包括一电容C，所述电容C的一端电连接于所述第一节点T，所述电容C的另一端与所述第一扫描线Gate1电连接。
参见图5至图9所示，图5至图9为一实施方式中第二基板12的制备流程示意图。
如图5所示，在所述第二衬底基板121上的对应位置处形成遮光块17。
如图6所示，采用半掩膜技术在所述第二衬底基板121上一次形成红色色阻块161和第一色阻层164a，红色色阻块161的厚度大于第一色阻层164a的厚度。
如图7所示，采用半掩膜技术一次形成位于所述第二衬底基板121上的绿色色阻块162以及位于所述第一色阻层164a上的第二色阻层164b，所述第一色阻层164a与所述第二色阻层164b形成所述挡光部分164。
如图8所示，在所述第二衬底基板121上形成蓝色色阻块163，以形成彩膜层。
如图9所示，在所述彩膜层以及所述遮光块17上形成第二像素电极122后，在所述第二像素电极122上形成第二配向膜层123。
基于上述液晶显示面板10，本申请还提供一种液晶显示装置，如图10所示，所述液晶显示装置包括光束发射器20以及如上述任一实施方式中所述的液晶显示面板10，所述光束发射器20用于发射设定颜色的投射光束，所述液晶显示面板10中的光传感器感测所述光束发射器20投射在所述液晶显示面板10上的投射光束。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种液晶显示面板，其中，所述液晶显示面板包括：
    第一基板，所述第一基板包括第一衬底基板；
    与所述第一基板相对设置的第二基板；
    设置于所述第一衬底基板靠近所述第二基板的一侧的光传感器，所述光传感器包括传感晶体管，所述传感晶体管包括第一栅极、第一半导体以及与所述第一半导体连接的第一源漏极；
    设置于所述第一半导体远离所述第一衬底基板的一侧的彩膜层，所述彩膜层包括多个相间隔的色阻块；
    其中，所述彩膜层还包括位于相邻两所述色阻块之间的挡光部分，所述挡光部分在所述第一衬底基板上的正投影覆盖所述第一半导体在所述第一衬底基板上的正投影。
  2. 根据权利要求1所述的液晶显示面板，其中，所述挡光部分包括层叠设置的第一色阻层和第二色阻层，所述第一色阻层的颜色与所述第二色阻层的颜色相异。
  3. 根据权利要求2所述的液晶显示面板，其中，所述第一色阻层为红色色阻层和绿色色阻层中的一者，所述第二色阻层为红色色阻层和绿色色阻层中的另一者。
  4. 根据权利要求2所述的液晶显示面板，其中，所述第一色阻层或所述第二色阻层与一相邻的所述色阻块一体成型。
  5. 根据权利要求4所述的液晶显示面板，其中，与所述第一色阻层或所述第二色阻层一体成型的色阻块的厚度与所述挡光部分的厚度相同。
  6. 根据权利要求1所述的液晶显示面板，其中，所述挡光部分在所述第一衬底基板上的正投影与所述第一半导体在所述第一衬底基板上的正投影重叠。
  7. 根据权利要求1所述的液晶显示面板，其中，所述光传感器还包括开关晶体管，所述开关晶体管包括与所述第一栅极同层设置的第二栅极、与所述第一半导体同层设置的第二半导体以及与所述第一源漏极同层设置的第二源漏极；
    其中，所述第二半导体远离所述第一衬底基板的一侧上设置有遮光层，相邻两所述色阻块之间设置有间隙区，所述遮光层包括与所述间隙区对应设置的遮光块，所述遮光块在所述第一衬底基板上的正投影覆盖所述第二半导体在所述第一衬底基板上的正投影。
  8. 根据权利要求7所述的液晶显示面板，其中，所述第一基板还包括：
    覆盖所述第一栅极和所述第二栅极的栅极绝缘层，所述第一半导体和所述第二半导体设置于所述栅极绝缘层远离所述第一衬底基板的一侧上，所述第一源漏极设置于所述第一半导体远离所述第一衬底基板的一侧上，所述第二源漏极设置于所述第二半导体远离所述第一衬底基板的一侧上；
    覆盖所述第一半导体、所述第一源漏极、第二半导体、第二源漏极以及栅极绝缘层的钝化层；
    其中，所述彩膜层设置于所述钝化层远离所述第一衬底基板的一侧上。
  9. 根据权利要求1所述的液晶显示面板，其中，所述第二基板包括第二衬底基板，所述彩膜层设置于所述第二衬底基板靠近所述第一基板的一侧。
  10. 一种液晶显示装置，其中，所述液晶显示装置包括光束发射器以及液晶显示面板，所述光束发射器用于发射设定颜色的投射光束；所述液晶显示面板包括：
    第一基板，所述第一基板包括第一衬底基板；
    与所述第一基板相对设置的第二基板；
    设置于所述第一衬底基板靠近所述第二基板的一侧的光传感器，所述光传感器感测所述光束发射器投射在所述液晶显示面板上的投射光束；所述光传感器包括传感晶体管，所述传感晶体管包括第一栅极、第一半导体以及与所述第一半导体连接的第一源漏极；
    设置于所述第一半导体远离所述第一衬底基板的一侧的彩膜层，所述彩膜层包括多个相间隔的色阻块；
    其中，所述彩膜层还包括位于相邻两所述色阻块之间的挡光部分，所述挡光部分在所述第一衬底基板上的正投影覆盖所述第一半导体在所述第一衬底基板上的正投影。
  11. 根据权利要求10所述的液晶显示装置，其中，所述挡光部分包括层叠设置的第一色阻层和第二色阻层，所述第一色阻层的颜色与所述第二色阻层的颜色相异。
  12. 根据权利要求11所述的液晶显示装置，其中，所述第一色阻层为红色色阻层和绿色色阻层中的一者，所述第二色阻层为红色色阻层和绿色色阻层中的另一者。
  13. 根据权利要求12所述的液晶显示装置，其中，所述投射光束的颜色为黄色。
  14. 根据权利要求11所述的液晶显示装置，其中，所述第一色阻层或所述第二色阻层与一相邻的所述色阻块一体成型。
  15. 根据权利要求14所述的液晶显示装置，其中，与所述第一色阻层或所述第二色阻层一体成型的色阻块的厚度与所述挡光部分的厚度相同。
  16. 根据权利要求15所述的液晶显示装置，其中，所述第一色阻层的厚度和所述第二色阻层的厚度为1～1.5微米。
  17. 根据权利要求10所述的液晶显示装置，其中，所述挡光部分在所述第一衬底基板上的正投影与所述第一半导体在所述第一衬底基板上的正投影重叠。
  18. 根据权利要求10所述的液晶显示装置，其中，所述光传感器还包括开关晶体管，所述开关晶体管包括与所述第一栅极同层设置的第二栅极、与所述第一半导体同层设置的第二半导体以及与所述第一源漏极同层设置的第二源漏极；
    其中，所述第二半导体远离所述第一衬底基板的一侧上设置有遮光层，相邻两所述色阻块之间设置有间隙区，所述遮光层包括与所述间隙区对应设置的遮光块，所述遮光块在所述第一衬底基板上的正投影覆盖所述第二半导体在所述第一衬底基板上的正投影。
  19. 根据权利要求18所述的液晶显示装置，其中，所述第一基板还包括：
    覆盖所述第一栅极和所述第二栅极的栅极绝缘层，所述第一半导体和所述第二半导体设置于所述栅极绝缘层远离所述第一衬底基板的一侧上，所述第一源漏极设置于所述第一半导体远离所述第一衬底基板的一侧上，所述第二源漏极设置于所述第二半导体远离所述第一衬底基板的一侧上；
    覆盖所述第一半导体、所述第一源漏极、第二半导体、第二源漏极以及栅极绝缘层的钝化层；
    其中，所述彩膜层设置于所述钝化层远离所述第一衬底基板的一侧上。
  20. 根据权利要求10所述的液晶显示装置，其中，所述第二基板包括第二衬底基板，所述彩膜层设置于所述第二衬底基板靠近所述第一基板的一侧。
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