WO2022019130A1 - イオンガン及び真空処理装置 - Google Patents
イオンガン及び真空処理装置 Download PDFInfo
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- WO2022019130A1 WO2022019130A1 PCT/JP2021/025743 JP2021025743W WO2022019130A1 WO 2022019130 A1 WO2022019130 A1 WO 2022019130A1 JP 2021025743 W JP2021025743 W JP 2021025743W WO 2022019130 A1 WO2022019130 A1 WO 2022019130A1
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- yoke
- magnet
- anode
- ion gun
- magnetic field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
- H01J27/143—Hall-effect ion sources with closed electron drift
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/152—Magnetic means
Definitions
- the present invention relates to an ion gun and a vacuum processing apparatus.
- An ion gun is a device that emits generated ions as an ion beam, and is used in vacuum processing devices used in the manufacture of semiconductor devices.
- the type of ion gun called a closed drift ion source is used in various fields by taking advantage of the feature that the injection port of the ion beam literally forms a closed loop and it is easy to increase the area.
- the closed drift type ion gun has the advantage of being able to generate plasma and accelerate the ions at the same time, but due to its structure, it avoids that some of the accelerated ions collide with the magnetic poles that make up the ejection port. I can't. Therefore, the magnetic poles are scraped off with the passage of time, the discharge stability gradually deteriorates, and finally the discharge cannot be maintained. In addition to scraping the magnetic poles, problems such as contamination of the processed material by the scraped magnetic pole material, heat generation of the magnetic poles, and a decrease in the etching rate due to beam loss are also caused.
- Patent Document 1 discloses an ion gun having an increased mirror ratio in the vicinity of the injection port. Further, Patent Document 2 discloses an ion gun in which a magnetic pole is coated with a member having high spatter resistance.
- An object of the present invention is to provide an ion gun capable of improving the injection efficiency and uniformity of an ion beam and capable of stably operating for a long period of time, and a vacuum processing apparatus using the same.
- a spatial magnetic field is formed between the anode, the cathode having the first portion and the second portion facing the anode, and the first portion and the second portion.
- An annular gap including a curved portion is provided between the first portion and the second portion of the cathode, and the first portion is inside the gap.
- the second portion is arranged outside the gap, and the magnet is placed in the space between the first portion and the second portion and the anode, from the second portion to the second portion.
- the magnetic field vector at the point where the magnetic force line and the cross-sectional center line of the gap intersect in the curved portion is the first of the planes orthogonal to the cross-sectional center line.
- An ion gun tilted at a first angle of less than 1.5 degrees to the side of the portion and the second portion and greater than 0 degrees to the side of the anode is provided.
- a spatial magnetic field is provided between the anode, the cathode having the first portion and the second portion facing the anode, and the first portion and the second portion.
- an ion gun having a magnet to be formed and having an annular gap including a curved portion between the first portion and the second portion of the cathode
- the ion beam emitted from the gap is adjusted. It is a method of adjusting an ion beam by shifting the position of the bottom of the magnetic field line formed between the first portion and the second portion of the curved portion inward from the cross-sectional center line of the gap.
- a method for adjusting an ion beam for adjusting the center position of the ion beam emitted from the gap is provided.
- a spatial magnetic field is created between the anode, the cathode having the first portion and the second portion facing the anode, and the first portion and the second portion. It has a magnet to be formed, and an annular gap including a curved portion is provided between the first portion and the second portion of the cathode, and the first portion is inside the gap. The second portion is arranged outside the gap, and the magnet is placed in the space between the first portion and the second portion and the anode, from the second portion to the first portion.
- a method of adjusting an ion beam for adjusting an ion beam emitted from the gap in an ion gun that forms a magnetic field line in the direction of Provided is a method for adjusting an ion beam that adjusts the center position of the ion beam emitted from the gap by inclining the magnetic field vector of the above to the side of the anode with respect to a plane orthogonal to the center line of the cross section.
- the emission efficiency and uniformity of the ion beam can be improved.
- the collision of the ion beam with the magnetic pole can be suppressed, and excellent effects such as reduction of change with time, improvement of maintenance cycle, and reduction of running cost can be realized.
- FIG. 1 is a perspective view showing the structure of an ion gun according to the first embodiment of the present invention.
- FIG. 2 is a plan view showing the structure of an ion gun according to the first embodiment of the present invention.
- FIG. 3A is a schematic cross-sectional view (No. 1) showing the structure of the ion gun according to the first embodiment of the present invention.
- FIG. 3B is a schematic cross-sectional view (No. 2) showing the structure of the ion gun according to the first embodiment of the present invention.
- FIG. 4 is an enlarged schematic cross-sectional view showing a structure in the vicinity of the injection port of the ion gun according to the first embodiment of the present invention.
- FIG. 5A is a diagram (No.
- FIG. 5B is a diagram (No. 2) illustrating the operation of the ion gun according to the first embodiment of the present invention.
- FIG. 6 is a schematic diagram illustrating a magnetic mirror force generated by a mirror magnetic field.
- FIG. 7A is a diagram (No. 1) showing the structure and operation of the ion gun according to the reference example.
- FIG. 7B is a diagram (No. 2) showing the structure and operation of the ion gun according to the reference example.
- FIG. 8 is a schematic diagram illustrating the magnetic mirror force generated in the curved portion of the injection port.
- FIG. 9 is a schematic diagram showing the electrical relationship between the plasma and the anode and the magnetic pole plate in the curved portion of the ejection port.
- FIG. 10 is a schematic diagram illustrating the direction of the magnetic field vector on the cross-sectional center line of the injection port.
- FIG. 11 is a schematic diagram illustrating the movement of electrons in the space between the magnetic pole plate and the anode.
- FIG. 12 is a graph showing the result of simulating the amount of scraping of the magnetic pole plate when the position of the bottom of the magnetic pole line is changed.
- FIG. 13 is a graph showing the result of obtaining the relationship between the distance under the magnet and the bottom position of the magnetic field line by simulation.
- FIG. 10 is a schematic diagram illustrating the direction of the magnetic field vector on the cross-sectional center line of the injection port.
- FIG. 11 is a schematic diagram illustrating the movement of electrons in the space between the magnetic pole plate and the anode.
- FIG. 12 is a graph showing the result of simulating
- FIG. 14 is a graph showing the result of simulating the relationship between the distance from the anode on the center line of the cross section of the injection port and the inclination angle of the magnetic field line.
- FIG. 15 is a perspective view showing the structure of the second embodiment of the present invention.
- FIG. 16 is a diagram illustrating the operation of the ion gun according to the second embodiment of the present invention.
- FIG. 17 is a graph showing the result of simulating the amount of scraping of the magnetic pole plate due to the change in the cross-sectional area of the first yoke.
- FIG. 18 is a diagram illustrating the operation of the ion gun according to the third embodiment of the present invention.
- FIG. 19 is an enlarged view of the vicinity of the magnetic pole plate covered with the first magnetic pole cover.
- FIG. 20 is an enlarged view of the vicinity of the magnetic pole plate covered with the second magnetic pole cover.
- FIG. 21 is an enlarged view of the vicinity of the magnetic pole plate covered with the third magnetic pole cover.
- FIG. 22 is a schematic view showing a vacuum processing apparatus according to a fourth embodiment of the present invention.
- FIG. 23 is a perspective view showing the structure of an ion gun having an annular opening having a perfect circular shape.
- FIG. 1 is a perspective view showing the structure of an ion gun according to the present embodiment.
- FIG. 2 is a plan view showing the structure of the ion gun according to the present embodiment.
- 3A and 3B are schematic cross-sectional views showing the structure of an ion gun according to the present embodiment.
- 3A is a sectional view taken along the line AA'of FIG. 2
- FIG. 3B is a sectional view taken along the line BB'of FIG.
- the ion gun 10 includes the magnetic pole plates 20A and 20B, the magnet 32, the yoke 34, and the anode 40, and has a substantially rectangular parallelepiped appearance. As shown in FIG. 1, one main surface of the ion gun 10 is provided with an injection port 22 for emitting an ion beam.
- the magnetic pole plate 20A and the magnetic pole plate 20B are plate-like bodies made of a magnetic material having high magnetic permeability and having conductivity.
- the magnetic pole plate 20B is an annular plate-like body having an opening corresponding to the outer peripheral shape of the magnetic pole plate 20A.
- the magnetic pole plate 20A is arranged inside the opening of the magnetic pole plate 20B so as to secure a predetermined gap between the magnetic pole plate 20A and the magnetic pole plate 20B.
- the magnetic pole plate 20A and the magnetic pole plate 20B may have a function as magnetic poles forming a space magnetic field by arranging the magnetic pole plates 20A and the magnetic pole plates 20B with a predetermined gap.
- the gap between the magnetic pole plate 20A and the magnetic pole plate 20B forms an annular opening along the outer circumference of the magnetic pole plate 20A and the inner circumference of the magnetic pole plate 20B.
- the annular opening thus formed constitutes the ion beam ejection port 22.
- the injection port 22 may include a linear straight portion 22a and a semicircular curved portion 22b, as shown in FIGS. 1 and 2, for example.
- the injection port 22 is preferably annular in order to maintain discharge, but its shape is not particularly limited. For example, an arbitrary shape such as a part of a perfect circle shape or a part of an elliptical shape as shown in FIG. 23 can be applied to the curved portion 22b.
- the curvature of the curved shape may be constant or variable.
- the magnetic pole plate 20A and the magnetic pole plate 20B are not particularly limited as long as they are magnetic materials having high magnetic permeability and have conductivity, but are composed of, for example, ferromagnetic stainless steel such as SUS430, SmCo alloy, NdFe alloy and the like. obtain.
- the yoke 34 is not particularly limited as long as it is a magnetic material having high magnetic permeability and has conductivity, but may be made of, for example, a ferromagnetic stainless steel such as SUS430, an SmCo alloy, an NdFe alloy or the like.
- the magnet 32 may be a permanent magnet or an electromagnet.
- the maximum magnetic flux density in the magnetic field formed between the magnetic pole plate 20A and the magnetic pole plate 20B by the magnet 32 is preferably about 1000 [Gauss].
- the magnet 32 is located on the cross-sectional center line 24 of the injection port 22 in the straight portion 22a of the injection port 22 as shown in FIG. 3A.
- the distance between the magnet 32 and the magnetic pole plate 20B is substantially equal to the distance between the magnet 32 and the magnetic pole plate 20A.
- the length of the magnetic path between the magnet 32 and the magnetic pole plate 20B is substantially equal to the length of the magnetic path between the magnet 32 and the magnetic pole plate 20A.
- the cross-sectional center line 24 of the ejection port 22 means a straight line parallel to the ejection direction (Z direction) of the ion beam passing through the center in the width direction of the ejection port 22.
- FIG. 4 is a cross-sectional view conceptually showing the shape of a portion where the magnetic pole plates 20A and 20B and the anode 40 face each other.
- FIGS. 5A and 5B are diagrams illustrating the operation of the ion gun according to the present embodiment.
- 5A corresponds to the AA'line cross section of FIG. 2
- FIG. 5B corresponds to the BB'line cross section of FIG.
- the cross section shown in FIGS. 5A and 5B is assumed to be a surface that appears when the ion gun 10 is cut in the direction in which the width of the injection port 22 is minimized.
- the cross section of the ion gun in the present application is assumed to be a surface that appears when the ion gun 10 is cut in the direction in which the width of the injection port 22 is minimized.
- a gas for discharging such as argon (Ar) is supplied to the recess 36 through the gas introduction hole 38, and the pressure inside the ion gun 10 is adjusted to be about 0.1 Pa. If the pressure in the usage environment (for example, the pressure in the chamber of the vacuum processing device in which the ion gun 10 is installed) is already about 0.1 Pa and discharge is possible in that state, the gas supply operation may be omitted. good.
- the magnetic flux (magnetic field line 60) emitted from the north pole of the magnet 32 passes through the yoke 34 and the magnetic pole plate 20B, and is emitted from the tip of the magnetic pole plate 20B.
- the magnetic field lines 60 emitted from the tip of the magnetic pole plate 20B spread by a repulsive force and then are sucked into the magnetic pole plate 20A.
- the magnetic field lines 60 have a vertically convex shape as shown in FIGS. 5A and 5B.
- a magnetic field space having such a shape is called a mirror magnetic field.
- the mirror magnetic field acts to confine the charged particles in it.
- the electrons in the plasma 50 are drawn into the anode 40 by the electric field between the magnetic pole plates 20A and 20B and the anode 40. Further, the cations in the plasma 50 are accelerated by the potential difference between the magnetic pole plates 20A and 20B and the anode 40 to become an ion beam 52.
- the ion gun 10 according to the present embodiment is characterized in that the magnet 32 is arranged outside the cross-sectional center line 24 of the injection port 22 in the curved portion 22b of the injection port 22.
- the reason why the ion gun 10 of the present embodiment is configured in this way will be described below with reference to the ion gun according to the reference example.
- FIGS. 7A and 7B are schematic cross-sectional views showing the structure and operation of an ion gun according to a reference example.
- 7A corresponds to the AA'line cross section of FIG. 1
- FIG. 7B corresponds to the BB'line cross section of FIG.
- the ion gun according to the reference example shown in FIGS. 7A and 7B is the same as the ion gun 10 according to the present embodiment except that the arrangement of the magnet 32 is different. That is, in the ion gun according to the reference example, the magnet 32 is arranged at a position facing the injection port 22 with the anode 40 interposed therebetween. That is, the magnet 32 is located on the cross-sectional center line 24 of the injection port 22 in both the straight portion 22a and the curved portion 22b of the injection port 22.
- the magnetic pole plates 20A and 20B are scraped off with time due to the sputtering action of the colliding ion beam 52, the discharge stability gradually deteriorates, and finally the discharge cannot be maintained. Therefore, the magnetic pole plates 20A and 20B need to be replaced regularly, but as the number of colliding ion beams 52 increases, the amount of the magnetic pole plates 20A and 20B scraped increases, and the maintenance cycle becomes shorter. Further, since the particles generated by the sputtering of the magnetic pole plates 20A and 20B cause equipment contamination, it is desirable to reduce the number of ion beams 52 colliding with the magnetic pole plates 20A and 20B as much as possible.
- FIG. 8 is a schematic diagram illustrating a magnetic mirror force generated in the curved portion 22b of the injection port 22.
- FIG. 9 is a diagram showing the electrical relationship between the plasma 50, the anode 40, and the magnetic pole plates 20A and 20B in the curved portion 22b of the ejection port 22.
- the magnetic field vector at the point where the magnetic field line 60 and the cross-section center line 24 of the injection port 22 intersect is emitted so as to be inclined toward the anode 40 with respect to the plane orthogonal to the cross-section center line 24.
- the center position of the ion beam 52 emitted from the outlet 22 is adjusted.
- the kinetic energy of the electron e becomes highest during the reciprocating motion when the electron e is located at the bottom 62 of the magnetic field line 60. Therefore, the frequency of ionization, that is, the density of the plasma 50, is also highest in the vicinity of the bottom 62 of the magnetic field lines 60. Therefore, if the magnetic field is designed so that the position of the bottom 62 of the magnetic field line 60 is shifted from the cross-sectional center line 24 of the ejection port 22, the center of the plasma 50 and the ion beam 52 is also moved from the cross-sectional center line 24 of the ejection port 22 accordingly. It becomes possible to shift.
- the center of the plasma 50 is emitted. It is possible to shift to the vicinity of the cross-sectional center line 24 of the exit 22. As a result, even in the curved portion 22b of the ejection port 22, the collision of the ion beam 52 with the magnetic pole plates 20A and 20B can be minimized and the ion beam 52 can be efficiently ejected as in the straight portion 22a.
- FIG. 12 is a graph showing the result of simulating the amount of scraping of the magnetic pole plates 20A and 20B when the position of the bottom 62 of the magnetic pole line 60 is changed.
- the vertical axis represents the ratio of the amount of scraping of the magnetic pole plate 20A to the amount of scraping of the magnetic pole plate 20B (internal / external ratio of scraping). The value on the vertical axis is obtained by dividing the larger value of the scraped amount of the magnetic pole plate 20A and the scraped amount of the magnetic pole plate 20B by the smaller value.
- the value on the vertical axis shows a positive value when the amount of scraping of the magnetic pole plate 20B is larger than the amount of scraping of the magnetic pole plate 20A, and is negative when the amount of scraping of the magnetic pole plate 20A is larger than the amount of scraping of the magnetic pole plate 20B. It shall indicate the value.
- the horizontal axis represents the distance (position of the bottom of the magnetic field line) from the cross-sectional center line of the injection port 22 to the bottom 62 of the magnetic field line 60.
- the value on the horizontal axis is a positive value for the shift amount when the position of the bottom 62 is shifted outward with respect to the cross-sectional center line 24 of the injection port 22, and the position of the bottom 62 is at the center of the cross section of the injection port 22.
- the amount of shift when shifting inward is shown as a negative value.
- the plasma 50 and the ion beam 52 The center shifts outward from the cross-sectional center line 24 of the injection port 22.
- the amount of scraping of the magnetic pole plate 20B was about 2.1 times the amount of scraping of the magnetic pole plate 20A.
- the bottom 62 of the magnetic field line 60 is the cross-section of the ejection port 22. It suffices to shift inward from the center line 24.
- the position of the bottom 62 of the magnetic field line 60 is preferably shifted inward by about 0.1 mm to 0.4 mm from the cross-sectional center of the injection port 22, and is 0 from the cross-sectional center of the injection port 22. It was found that the optimum shift was .25 mm inward.
- the absolute amount of scraping of the magnetic pole plates 20A and 20B tends to be small.
- the amount of scraping of the magnetic pole plates 20A and 20B is maximized as compared with the case where the shift amount of the bottom 62 is set to 0 mm.
- the shift amount of the bottom 62 is set to 0 mm.
- the peak value of the scraping rate is set to 1 as compared with the case where the shift amount of the bottom 62 is set to 0 mm. It was possible to reduce the amount from one-third to one-1.8. This corresponds to a 1.3 to 1.8 times longer component life and maintenance cycle.
- the appropriate shift amount of the position of the bottom 62 of the magnetic field line 60 changes depending on the structure of the ion gun 10, the discharge condition, and the like. For example, when the size of the ion gun 10 or the curvature of the curved portion 22b of the injection port 22 becomes large, it is considered that the optimum shift amount becomes larger than the above value. It is preferable that the shift amount of the position of the bottom 62 of the magnetic field line 60 is appropriately set according to the structure of the ion gun 10, the discharge condition, and the like.
- the method of shifting the position of the bottom 62 of the magnetic field line 60 in the curved portion 22b of the injection port 22 is not particularly limited, but one example is a method of changing the position of the magnet 32 as described in the present embodiment. .. Shifting the position of the bottom 62 of the magnetic field line 60 breaks the symmetry of the magnetic field with respect to the cross-sectional center line 24 of the ejection port 22, and it can be said that moving the location of the magnet 32 is the most direct method.
- FIG. 13 is a graph showing the result of obtaining the relationship between the distance under the magnet and the bottom position of the magnetic field line by simulation.
- the “distance under the magnet” on the vertical axis represents the distance x (see FIG. 5B) from the lower surface of the structure 30 to the lower surface of the magnet 32.
- the “bottom position of the magnetic field line” on the horizontal axis is set to 0 when the bottom 62 is located on the cross-sectional center line 24 of the injection port 22, and the position inside the cross-sectional center line 24 is represented by a negative sign.
- the position outside the center line 24 of the cross section is represented by a positive sign.
- the distance x under the magnet is changed without changing the size of the magnet 32.
- the distance x under the magnet and the position of the bottom 62 of the magnetic field line 60 are generally in a proportional relationship.
- the distance x under the magnet By changing the distance x under the magnet, the internal / external balance of the magnetic field in the vicinity of the magnetic pole changes, and the position of the bottom 62 of the magnetic field line 60 changes.
- the position of the bottom 62 of the magnetic field line 60 By increasing the distance x under the magnet, the position of the bottom 62 of the magnetic field line 60 can be shifted inward of the ejection port 22.
- the position of the bottom 62 of the magnetic field line 60 can be shifted inward by 0.25 mm by setting the distance x under the magnet to Y.
- Y can be set to a size of about several tens of mm.
- FIG. 14 is a graph showing the result of simulating the relationship between the distance from the anode 40 on the cross-sectional center line 24 of the injection port 22 and the inclination angle of the magnetic field line 60.
- FIG. 14 shows the simulation results when the positions of the bottom 62 of the magnetic field lines 60 are set to ⁇ 0.1 mm, ⁇ 0.4 mm, and ⁇ 0.56 mm, respectively.
- the position of the bottom 62 of the magnetic field line 60 the position inside the cross-sectional center line 24 of the ejection port 22 is represented by a negative sign, and the position outside the cross-sectional center line 24 of the ejection port 22 is represented by a positive sign.
- the inclination angle of the magnetic field line 60 is 0 degrees when it is parallel to the plane 66 (FIG. 10) orthogonal to the cross-sectional center line 24 of the injection port 22, and is represented by a negative sign when it is inclined toward the anode 40.
- the case where the magnetic pole plates 20A and 20B are inclined in the direction is represented by a positive sign.
- the shift amount of the position of the bottom 62 of the magnetic field line 60 increases inward, the inclination angle toward the anode 40 at the point intersecting the cross-sectional center line 24 of the injection port 22 increases.
- the inclination angle of the magnetic field line 60 in the range of the shift amount of -0.1 mm to -0.4 mm in which the absolute amount of scraping of the magnetic pole plates 20A and 20B and the peak value of the scraping rate were improved was determined. It was found to be in the range of 1.5 degrees to -3.5 degrees.
- the magnetic field vector at the point where the magnetic field line 60 and the cross-sectional center line 24 of the injection port 22 intersect is 0 degrees toward the magnetic pole plates 20A and 20B with respect to the surface 66 orthogonal to the cross-sectional center line 24. It is desirable to incline at a first angle in the range of 1.5 degrees to the side of the anode 40 and in the range of 0 to 3.5 degrees. Further, in the straight line portion 22a, the magnetic field vector at the point where the magnetic field line 60 and the cross-sectional center line 24 of the injection port 22 intersect is a second angle smaller than the first angle with respect to the surface 66 orthogonal to the cross-sectional center line 24. It is desirable to make an angle. The optimum value for the second angle is 0 degrees at which the magnetic field vector is parallel to the plane 66.
- the method of breaking the symmetry of the magnetic field and shifting the position of the bottom 62 of the magnetic field line 60 is not limited to the method of moving the position of the magnet 32.
- a method of controlling the applied current and the like can be mentioned.
- the emission efficiency and uniformity of the ion beam can be improved.
- FIG. 15 is a perspective view showing the structure of the ion gun according to the present embodiment.
- FIG. 16 shows the operation of the ion gun in the CC'line cross section of FIG.
- the same components as those of the ion gun according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted or simplified.
- the ion gun 10 includes magnetic pole plates 20A and 20B, a magnet 32, a first yoke 34A, a second yoke 34B, an adjustment yoke 34C, an anode 40, and the like. including.
- one main surface of the ion gun 10 is provided with an injection port 22 for emitting an ion beam.
- the magnetic pole plate 20A is magnetically coupled to the magnet 32 via the first yoke 34A. Further, the magnetic pole plate 20B is magnetically coupled to the magnet 32 via the second yoke 34B.
- the adjusting yoke 34C is provided so as to come into contact with the first yoke 34A, the second yoke 34B and / or the magnet 32.
- the adjusting yoke 34C is arranged on a part of the outer peripheral surface of the first yoke 34A.
- the arrangement of the adjustment yoke 34C is not limited to this.
- the adjustment yoke 34C may be provided on a part of the outer peripheral surface of the second yoke 34B, may be provided on a part of the outer peripheral surface of the first yoke 34A and the magnet 32, or may be provided on a part of the outer peripheral surface of the second yoke 34B. It may be provided over the entire surface, or may be indirectly provided on the first yoke 34A.
- the adjusting yoke 34C can be installed inside the structure 30, for example, inside the inner wall of the recess 36 or inside the first yoke 34A having a hollow inside. Further, by using a plurality of adjusting yokes 34C having different thicknesses or adjusting yokes 34C having the same thickness, the magnetic resistance of the yoke in contact with the adjusting yoke 34C may be adjusted.
- the magnet 32 is arranged outside the cross-sectional center line 24 of the ejection port 22, and the distance x under the magnet is adjusted to adjust the bottom 62 of the magnetic field line 60.
- the position was controlled. That is, by changing the distance x under the magnet, the internal / external ratio of the scraping of the magnetic pole plates 20A and 20B was adjusted.
- the adjustment yoke 34C by using the adjustment yoke 34C, it is possible to adjust the position of the bottom 62 of the magnetic field line 60 without changing the distance x under the magnet.
- the position of the bottom 62 of the magnetic field line 60 can change depending on the ratio of each magnetoresistance from the tip of the magnetic pole plates 20A and 20B to the magnet. Specifically, the bottom of the magnetic field line tends to shift to the side where the magnetic resistance is large.
- the reluctance is inversely proportional to the cross-sectional area and magnetic permeability of the magnetic pole plate and yoke, which are magnetic materials, and is proportional to the length.
- the position of the bottom 62 of the magnetic field line 60 is adjusted by utilizing the above characteristics.
- the ion gun 10 of the present embodiment is configured by arranging a first yoke 34A and a second yoke 34B having the same thickness above and below the magnet 32.
- the adjusting yoke 34C is arranged in the structure 30 in order to adjust the ratio of the magnetic resistance from the tip portions of the magnetic pole plates 20A and 20B to the magnet 32.
- the substantial thickness and cross-sectional area of the first yoke 34A and the second yoke 34B include the thickness and cross-sectional area of the adjusting yoke 34C in contact with the first yoke 34A and the second yoke 34B. Therefore, by using the adjustment yoke 34C, the ratio of the magnetic resistance can be adjusted, and the position of the bottom 62 of the magnetic field line 60 can be adjusted without changing the distance x under the magnet.
- FIG. 17 is a graph showing the result of simulating the amount of scraping of the magnetic pole plate when the cross-sectional area of the first yoke is changed.
- the horizontal axis shows the rate of change in the cross-sectional area of the first yoke, and the vertical axis shows the internal / external ratio of scraping.
- the cross-sectional area change rate of the first yoke corresponds to the ratio of the cross-sectional area of the first yoke 34A and the adjusting yoke 34C to the cross-sectional area of the second yoke 34B.
- the internal-external ratio of scraping shifts to the positive side as the cross-sectional area change rate of the first yoke 34A increases. Therefore, by appropriately adjusting the cross-sectional area of the first yoke 34A, the internal / external ratio of the scraping of the magnetic pole plates 20A and 20B can be optimized to ⁇ 1.
- the thickness of the adjusting yoke 34C is increased to increase the cross-sectional area change rate of the first yoke 34A so that the bottom position of the magnetic field lines shifts outward.
- the bottom position of the magnetic field lines is shifted to the outward direction.
- the thickness of the adjusting yoke 34C is reduced to reduce the cross-sectional area change rate of the first yoke 34A so that the bottom position of the magnetic field lines shifts inward.
- the bottom position of the magnetic field line may be adjusted by changing the cross-sectional area of the first yoke 34A by the adjusting yoke 34C, or the cross-sectional area of both the first yoke 34A and the second yoke 34B is changed by the adjusting yoke 34C. It may be adjusted by this.
- the present embodiment it is possible to control the position of the bottom 62 of the magnetic field line 60 by using the adjusting yoke 34C. Therefore, according to the present embodiment, it is possible to adjust the position of the bottom of the magnetic field lines even after assembling the ion gun or the vacuum processing apparatus.
- the adjustment according to the present embodiment is not limited to this.
- the internal / external ratio of the scraping of the magnetic pole plates 20A and 20B can be adjusted.
- the first yoke 34A and the second yoke 34B may be designed to have substantially the same magnetic permeability, or the first yoke 34A and the second yoke 34B may be designed to have different magnetic permeability. ..
- FIG. 18 shows the operation of the ion gun at the curved portion 22b of the injection port 22 (corresponding to the BB'line cross section of FIG. 2).
- FIG. 19 is an enlarged view of the vicinity of the magnetic pole plates 20A and 20B shown in FIG.
- the same components as those of the ion gun according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted or simplified.
- the ion gun according to this embodiment further has first magnetic pole covers 70A and 70B.
- the first magnetic pole covers 70A and 70B cover the entire surface of the magnetic pole plate 20A and the magnetic pole plate 20B. That is, the magnetic pole plates 20A and 20B and the first magnetic pole covers 70A and 70B are integrated to form the cathode of the ion gun according to the present embodiment. Since the first magnetic pole covers 70A and 70B are provided so as to cover the entire surface of the magnetic pole plates 20A and 20B, the magnetic pole plates 20A and 20B do not come into direct contact with plasma or ions.
- the magnetic pole cover used in this embodiment is not limited to the shapes of the first magnetic pole covers 70A and 70B shown in FIGS. 18 and 19, and various changes can be made as shown in FIGS. 20 and 21. ..
- FIG. 20 is an enlarged view of the vicinity of the magnetic pole plates 20A and 20B covered by the second magnetic pole covers 71A and 71B.
- the second magnetic pole covers 71A and 71B cover the entire surface of the magnetic pole plates 20A and 20B in the same manner as the first magnetic pole covers 70A and 70B.
- the second magnetic pole covers 71A and 71B are on the surface opposite to the anode 40 in the portion covering the surface where the magnetic pole plate 20A and the magnetic pole plate 20B face each other (in the present embodiment, the surface of the object to be processed (processed substrate 132)).
- the corners on the side) are chamfered and have an inclined surface.
- the ion beam is emitted from the ion gun with a divergence angle. Therefore, when the corner portion of the facing portion on the side to be processed is not chamfered, the ion beam may collide with the magnetic pole cover and the ion beam may not be efficiently emitted.
- the ion beam does not collide with the magnetic pole cover and the ion beam is efficiently emitted. can.
- FIG. 21 is an enlarged view of the vicinity of the magnetic pole plates 20A and 20B covered by the third magnetic pole covers 72A, 72B, 73A and 73B.
- the third magnetic pole covers 72A and 72B cover the outer surface of the magnetic pole plates 20A and 20B on the surface side opposite to the anode 40 (the surface side facing the object to be processed (processed substrate 132)). Further, the third magnetic pole covers 73A and 73B each cover the surface on the surface side where the magnetic pole plate 20A and the magnetic pole plate 20B face each other. Unlike the magnetic pole covers shown in FIGS.
- the third magnetic pole covers 72A, 72B, 73A, 73B are on the surface of the magnetic pole plates 20A, 20B opposite to the anode 40 (the object to be treated (subject). It covers only the outer surface of the surface side facing the processing substrate 132) and the surface of the surface side facing the magnetic pole plate 20A and the magnetic pole plate 20B.
- the outer surfaces of the magnetic pole plates 20A and 20B covered by the magnetic pole covers 72A and 72B are portions where the material of the object to be processed, which has been scraped by sputtering, easily adheres. Further, the surfaces of the magnetic pole plates 20A and 20B covered by the magnetic pole covers 73A and 73B are easily scraped by the ion beam.
- the portion covered by the magnetic pole cover to such a portion that is easily scraped, it is possible to reduce the influence on the magnetic field lines due to the provision of the magnetic pole cover. Further, it is not necessary to remove the magnetic pole plates 20A and 20B at the time of maintenance, and the number of parts required for installing the magnetic pole cover is reduced, so that workability is improved. Further, since the structure of the magnetic pole cover itself is simplified, the mounting error when installing the magnetic pole cover can be reduced, and the allowable tolerance at the time of manufacturing the magnetic pole cover can be increased.
- the third magnetic pole cover 72A and the third magnetic pole cover 73A are composed of independent parts, and the third magnetic pole cover 72B and the third magnetic pole cover 73B are composed of independent parts.
- the third magnetic pole covers 72A, 73A and the third magnetic pole covers 72B, 73B may be configured as an integral component, respectively.
- only the third magnetic pole covers 73A and 73B are chamfered, but the corners of the third magnetic pole covers 72A and 72B on the injection port 22 side according to the divergence angle of the ion beam.
- the portion may be chamfered to have an inclined surface.
- the magnetic pole cover be made of a non-magnetic material in consideration of the influence on the magnetic field lines. Further, in order to prevent the material of the magnetic pole cover scraped by the ion beam from reattaching to the anode, it is desirable that the magnetic pole cover is made of a material having a low sputtering rate.
- a magnetic pole cover can be configured by using a simple substance of titanium, tantalum, tungsten, carbon, or a compound containing these. Further, the magnetic pole cover can be configured by using a thermal spray film or a plate-shaped bulk. When the magnetic pole cover is configured using a plate-shaped bulk, the maintenance cycle can be set long and the magnetic pole cover can be easily replaced.
- the magnetic pole cover and the magnetic pole plate can be fixed by using a fastening member, or the magnetic pole cover and the magnetic pole can be fixed by a dovetail and a dovetail groove without using a fastening member. It can also be fixed to the board.
- FIG. 22 is a schematic view of the vacuum processing apparatus according to the present embodiment.
- the same components as those of the ion gun according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted or simplified.
- an ion beam etching device which is one of the vacuum processing devices used for manufacturing a semiconductor device.
- the application example of the ion gun according to the first to third embodiments is not limited to the ion beam etching apparatus, and may be a film forming apparatus such as an ion beam sputtering apparatus. Further, the application example of the ion gun according to the first to third embodiments is not limited to the vacuum processing device, and may be another device provided with the ion gun.
- the vacuum processing apparatus 100 may include a vacuum chamber 110, a vacuum pump 120, a holder 130 for holding the substrate to be processed 132, and an ion gun 140 as main components. ..
- the vacuum pump 120 is connected to the vacuum chamber 110.
- the holder 130 and the ion gun 140 are installed in the vacuum chamber 110.
- the vacuum chamber 110 is a processing chamber capable of maintaining the inside in a vacuum state, and various treatments such as etching, surface modification, and surface cleaning can be performed inside the processing chamber.
- the vacuum pump 120 is an exhaust device for discharging the gas in the vacuum chamber 110 and creating a vacuum state in the vacuum chamber 110. By discharging the gas in the vacuum chamber 110 by the vacuum pump 120, it is possible to bring the inside of the vacuum chamber into a high vacuum state of about 10-3 to 10-6 Pa.
- the holder 130 is a member for holding an object to be processed (processed substrate 132) made of, for example, Si, Ga, carbon, or the like.
- the holder 130 may include a swing mechanism. Since the holder 130 is provided with a swing mechanism, it is possible to perform processing with high in-plane uniformity on the substrate 132 to be processed.
- the holder 130 may further have other functions, such as a heating function for heating the substrate to be processed 132.
- the ion gun 140 is the ion gun described in the first embodiment, and is installed at a position facing the substrate to be processed 132 held by the holder 130.
- the ion gun 140 irradiates the ion beam 52 of cations toward the substrate 132 to be processed.
- the ion beam 52 emitted from the ion gun 140 collides with the substrate 132 to be processed while having high kinetic energy.
- the surface of the substrate to be processed 132 can be subjected to a predetermined treatment such as etching.
- the vacuum processing apparatus 100 By configuring the vacuum processing apparatus 100 using the ion guns 10 according to the first to third embodiments, it is possible to irradiate the substrate to be processed 132 with an ion beam 52 having high uniformity, and the processing quality can be improved. .. Further, the maintenance cycle can be extended by reducing the collision of the ion beam 52 with the magnetic pole plates 20A and 20B. As a result, the production cost can be improved and the processing capacity of the substrate 132 to be processed can be improved. Further, it is possible to prevent the inside of the vacuum chamber 110 and the substrate 132 to be processed from being contaminated by particles generated by sputtering the magnetic pole plates 20A and 20B by the ion beam 52.
- the magnet 32 is arranged on the cross-sectional center line 24 of the ejection port 22 in the straight line portion 22a of the ejection port 22, but the magnetic field is symmetrical with respect to the cross-sectional center line 24 of the ejection port 22. If it is a position, it does not necessarily have to be arranged on the cross-sectional center line 24.
- argon gas is exemplified as the gas for discharging, but the gas for discharging is not limited to a rare gas such as argon, but is a reactive gas typified by oxygen gas or nitrogen gas. There may be.
- the gas for electric discharge can be appropriately selected according to the purpose of use of the ion gun 10.
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Abstract
Description
本発明の第1実施形態によるイオンガンの構造について、図1乃至図3Bを用いて説明する。図1は、本実施形態によるイオンガンの構造を示す斜視図である。図2は、本実施形態によるイオンガンの構造を示す平面図である。図3A及び図3Bは、本実施形態によるイオンガンの構造を示す概略断面図である。図3Aは図2のA-A′線断面図であり、図3Bは図2のB-B′線断面図である。
本発明の第2実施形態によるイオンガンについて、図15及び図16を用いて説明する。図15は、本実施形態によるイオンガンの構造を示す斜視図である。図16は図15のC-C′線断面におけるイオンガンの動作を示している。第1実施形態によるイオンガンと同様の構成要素には同一の符号を付し、説明を省略し或いは簡潔にする。
本発明の第3実施形態によるイオンガンについて、図18乃至図21を用いて説明する。図18は射出口22の曲線部22b(図2のB-B′線断面に相当)におけるイオンガンの動作を示している。図19は、図18に示す磁極板20A,20Bの近傍の拡大図である。第1実施形態によるイオンガンと同様の構成要素には同一の符号を付し、説明を省略し或いは簡潔にする。
そのため、対面部の当該被処理物側の角部に面取りを行っていない場合に、イオンビームが磁極カバーに衝突し、効率よくイオンビームを射出できないことがある。そこで、磁極カバーの射出口22部分のイオンガンの外表面(アノード40とは反対の面)の角部の面取りを行うことで、磁極カバーへのイオンビームの衝突を防ぎ、効率よくイオンビームを射出できる。
本発明の第4実施形態による真空処理装置について、図22を用いて説明する。図22は、本実施形態による真空処理装置の概略図である。第1実施形態によるイオンガンと同様の構成要素には同一の符号を付し、説明を省略し或いは簡潔にする。
本発明は、上記実施形態に限らず種々の変形が可能である。
20A,20B…磁極板
22…射出口
22a…直線部
22b…曲線部
24…断面中心線
30…構造体
32…磁石
34…ヨーク
34A…第1ヨーク
34B…第2ヨーク
34C…調整ヨーク
36…凹部
38…ガス導入孔
40…アノード
42…磁性板
50…プラズマ
52…イオンビーム
60…磁力線
62…ボトム
64…磁気ミラー力
66…断面中心線と直交する面
70A,70B,71A,71B,72A,72B,73A,73B…磁極カバー
100…真空処理装置
110…真空チャンバ
120…真空ポンプ
130…ホルダ基板
132…被処理基板
140…イオンガン
Claims (38)
- アノードと、
前記アノードに対向する第1部分及び第2部分を有するカソードと、
前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、を有し、
前記カソードの前記第1部分と前記第2部分との間に、曲線部を含む環状の間隙が設けられており、
前記磁石は、前記曲線部の前記第1部分と前記第2部分との間に、前記間隙の断面中心線よりも内側にボトムを有する磁力線を形成する
ことを特徴とするイオンガン。 - 前記アノードと前記カソードとの間に印加する電界により、前記ボトムの位置にプラズマが生成される
ことを特徴とする請求項1記載のイオンガン。 - 前記ボトムは、前記アノードの表面から1mmの高さである
ことを特徴とする請求項1又は2記載のイオンガン。 - 前記断面中心線と前記ボトムとの間の距離は、0.1mmから0.4mmの範囲である
ことを特徴とする請求項1乃至3のいずれか1項に記載のイオンガン。 - アノードと、
前記アノードに対向する第1部分及び第2部分を有するカソードと、
前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、を有し、
前記カソードの前記第1部分と前記第2部分との間に、曲線部を含む環状の間隙が設けられており、
前記第1部分は前記間隙に対して内側に配され、前記第2部分は前記間隙に対して外側に配されており、
前記磁石は、前記第1部分及び前記第2部分と前記アノードとの間の空間に、前記第2部分から前記第1部分の方向に向かう磁力線を形成し、
前記曲線部において、前記磁力線と前記間隙の断面中心線とが交差する点の磁場ベクトルは、前記断面中心線と直交する面に対して、前記第1部分及び前記第2部分の側に1.5度よりも小さく、前記アノードの側に0度よりも大きい第1の角度で傾斜している
ことを特徴とするイオンガン。 - 前記第1の角度は、前記アノードの側に0度から3.5度の範囲である
ことを特徴とする請求項5記載のイオンガン。 - 前記曲線部において、前記磁力線の磁場ベクトルが前記断面中心線と直交する面と平行になる点は、前記断面中心線よりも前記第2部分の側に位置しており、前記断面中心線からの距離が0.1mmから0.4mmの範囲である
ことを特徴とする請求項5又は6記載のイオンガン。 - 前記磁石は、前記曲線部において、前記間隙の前記断面中心線よりも外側に配置されている
ことを特徴とする請求項1乃至7のいずれか1項に記載のイオンガン。 - 前記第2部分と前記磁石との間の磁路の長さは、前記第1部分と前記磁石との間の磁路の長さよりも短い
ことを特徴とする請求項1乃至8のいずれか1項に記載のイオンガン。 - 前記間隙は、イオンビームを射出するための射出口である
ことを特徴とする請求項1乃至9のいずれか1項に記載のイオンガン。 - 前記磁石は、前記磁石と前記第1部分及び前記第2部分とを磁気的に結合するヨークとともに、前記アノードを収容する環状の凹部が設けられた構造体を構成し、
前記カソードの前記第1部分及び前記第2部分は、前記環状の凹部に沿って前記間隙がその上に位置するように、前記構造体の前記環状の凹部が設けられた面の上に接合されている
ことを特徴とする請求項1乃至10のいずれか1項に記載のイオンガン。 - アノードと、
前記アノードに対向する第1部分及び第2部分を有するカソードと、
前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、
前記第1部分と前記磁石とを磁気的に結合する第1ヨークと、
前記第2部分と前記磁石とを磁気的に結合する第2ヨークと、を有し、
前記カソードの前記第1部分と前記第2部分との間に、環状の間隙が設けられており、
前記第1ヨークの磁気抵抗と前記第2ヨークの磁気抵抗とが異なっている
ことを特徴とするイオンガン。 - 前記第1ヨーク又は前記第2ヨークの前記磁気抵抗は調整可能である
ことを特徴とする請求項12記載のイオンガン。 - アノードと、
前記アノードに対向する第1部分及び第2部分を有するカソードと、
前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、
前記第1部分と前記磁石とを磁気的に結合する第1ヨークと、
前記第2部分と前記磁石とを磁気的に結合する第2ヨークと、を有し、
前記カソードの前記第1部分と前記第2部分との間に、間隙が設けられており、
前記第1ヨークの磁気抵抗又は前記第2ヨークの磁気抵抗が調整可能である
ことを特徴とするイオンガン。 - 前記第1ヨーク又は前記第2ヨークの外側に調整ヨークを有する
ことを特徴とする請求項14記載のイオンガン。 - アノードと、
前記アノードに対向する第1部分及び第2部分を有するカソードと、
前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、
前記第1部分と前記磁石とを磁気的に結合する第1ヨークと、
前記第2部分と前記磁石とを磁気的に結合する第2ヨークと、を有し、
前記カソードの前記第1部分と前記第2部分との間に、環状の間隙が設けられており、
前記第1ヨークの厚さと前記第2ヨークの厚さとが異なっている
ことを特徴とするイオンガン。 - 前記第1ヨークの厚さは、前記磁石を介して前記第2ヨークと対向する部分の厚さである
ことを特徴とする請求項16記載のイオンガン。 - 前記第1ヨークの厚さ又は前記第2ヨークの厚さは、調整ヨークの厚さを含む
ことを特徴とする請求項16記載のイオンガン。 - 前記第1ヨークの厚さ又は前記第2ヨークの厚さが調整可能である
ことを特徴とする請求項16乃至18のいずれか1項に記載のイオンガン。 - アノードと、
前記アノードに対向する第1部分及び第2部分を有するカソードと、
前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、
前記第1部分と前記磁石とを磁気的に結合する第1ヨークと、
前記第2部分と前記磁石とを磁気的に結合する第2ヨークと、を有し、
前記カソードの前記第1部分と前記第2部分との間に、環状の間隙が設けられており、
前記第1ヨークの断面積と前記第2ヨークの断面積とが異なっている
ことを特徴とするイオンガン。 - 前記第1ヨーク又は前記第2ヨークの断面積は調整ヨークの断面積を含む
ことを特徴とする請求項20記載のイオンガン。 - 前記第1ヨークの断面積又は前記第2ヨークの断面積が調整可能である
ことを特徴とする請求項20又は21記載のイオンガン。 - アノードと、
前記アノードに対向する第1部分及び第2部分を有するカソードと、
前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、
前記第1部分と前記磁石とを磁気的に結合する第1ヨークと、
前記第2部分と前記磁石とを磁気的に結合する第2ヨークと、を有し、
前記カソードの前記第1部分と前記第2部分との間に、環状の間隙が設けられており、
前記第1ヨークの透磁率と前記第2ヨークの透磁率とが異なっている
ことを特徴とするイオンガン。 - 前記カソードは、前記第1部分と前記第2部分とが対向する表面を覆う第1カバーを有する
ことを特徴とする請求項1乃至23のいずれか1項に記載のイオンガン。 - 前記第1カバーは、前記アノードとは反対の面である外表面側に傾斜面を有する
ことを特徴とする請求項24記載のイオンガン。 - 前記カソードは、前記アノードとは反対の面である外表面を覆う第2カバーを有する
ことを特徴とする請求項1乃至25のいずれか1項に記載のイオンガン。 - 前記第2カバーは、前記第1部分と前記第2部分とが対向する表面側に傾斜面を有する
ことを特徴とする請求項26記載のイオンガン。 - 前記カソードは、前記第1部分と前記第2部分の表面全体を覆う第3カバーを有する
ことを特徴とする請求項1乃至23のいずれか1項に記載のイオンガン。 - 前記第3カバーは、前記第1部分と前記第2部分とが対向する表面側又は前記アノードとは反対の面である外表面側に傾斜面を有する
ことを特徴とする請求項28記載のイオンガン。 - 前記第1カバーは、非磁性材料で形成されている
ことを特徴とする請求項24または25に記載のイオンガン。 - 前記第2カバーは、非磁性材料で形成されている
ことを特徴とする請求項26または27に記載のイオンガン。 - 前記第3カバーは、非磁性材料で形成されている
ことを特徴とする請求項28または29に記載のイオンガン。 - 前記非磁性材料は、チタン、タンタル、タングステン、炭素のうちの少なくとも1つを含む材料で形成されている
ことを特徴とする請求項30乃至32のいずれか1項に記載のイオンガン。 - 真空状態を維持することが可能な処理室と、
前記処理室の中に配置され、被処理物を保持するホルダと、
前記処理室の中に配置され、イオンビームを用いて前記被処理物に対して所定の処理を施すための請求項1乃至33のいずれか1項に記載のイオンガンと
を有することを特徴とする真空処理装置。 - アノードと、前記アノードに対向する第1部分及び第2部分を有するカソードと、前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、を有し、前記カソードの前記第1部分と前記第2部分との間に曲線部を含む環状の間隙が設けられたイオンガンにおいて、前記間隙から射出されるイオンビームを調整するイオンビームの調整方法であって、
前記曲線部の前記第1部分と前記第2部分との間に形成される磁力線のボトムの位置を前記間隙の断面中心線よりも内側方向にシフトすることにより、前記間隙から射出されるイオンビームの中心位置を調整する
ことを特徴とするイオンビームの調整方法。 - アノードと、前記アノードに対向する第1部分及び第2部分を有するカソードと、前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、を有し、前記カソードの前記第1部分と前記第2部分との間に曲線部を含む環状の間隙が設けられており、前記第1部分が前記間隙に対して内側に配され、前記第2部分が前記間隙に対して外側に配されており、前記磁石が前記第1部分及び前記第2部分と前記アノードとの間の空間に前記第2部分から前記第1部分の方向に向かう磁力線を形成するイオンガンにおいて、前記間隙から射出されるイオンビームを調整するイオンビームの調整方法であって、
前記曲線部において、前記磁力線と前記間隙の断面中心線とが交差する点の磁場ベクトルを、前記断面中心線と直交する面に対して前記アノードの側に傾斜させることにより、前記間隙から射出されるイオンビームの中心位置を調整する
ことを特徴とするイオンビームの調整方法。 - アノードと、前記アノードに対向する第1部分及び第2部分を有するカソードと、前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、前記第1部分と前記磁石を磁気的に結合する第1ヨークと、前記第2部分と前記磁石を磁気的に結合する第2ヨークと、を有し、前記カソードの前記第1部分と前記第2部分との間に環状の間隙が設けられたイオンガンにおいて、前記間隙から射出されるイオンビームを調整するイオンビームの調整方法であって、
前記第1ヨークと前記第2ヨークの磁気抵抗が異なる
ことを特徴とするイオンビームの調整方法。 - アノードと、前記アノードに対向する第1部分及び第2部分を有するカソードと、前記第1部分と前記第2部分との間に空間磁場を形成する磁石と、前記第1部分と前記磁石を磁気的に結合する第1ヨークと、前記第2部分と前記磁石を磁気的に結合する第2ヨークと、を有し、前記カソードの前記第1部分と前記第2部分との間に環状の間隙が設けられたイオンガンにおいて、前記間隙から射出されるイオンビームを調整するイオンビームの調整方法であって、
前記第1ヨーク又は前記第2ヨークの磁気抵抗が調整可能である
ことを特徴とするイオンビームの調整方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5763989A (en) * | 1995-03-16 | 1998-06-09 | Front Range Fakel, Inc. | Closed drift ion source with improved magnetic field |
JP2008053116A (ja) * | 2006-08-25 | 2008-03-06 | Ulvac Japan Ltd | イオンガン、及び成膜装置 |
US20120187843A1 (en) * | 2009-08-03 | 2012-07-26 | Madocks John E | Closed drift ion source with symmetric magnetic field |
CN109065429A (zh) * | 2018-08-10 | 2018-12-21 | 成都极星等离子科技有限公司 | 一种可降低电子逃逸率的离子源 |
WO2019182111A1 (ja) * | 2018-03-22 | 2019-09-26 | 株式会社アルバック | イオンガン |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4263806B2 (ja) * | 1999-04-09 | 2009-05-13 | 高橋 研 | イオン発生方法およびイオン源 |
WO2002001596A1 (en) | 2000-06-27 | 2002-01-03 | Ebara Corporation | Charged particle beam inspection apparatus and method for fabricating device using that inspection apparatus |
KR100885940B1 (ko) | 2000-06-27 | 2009-02-26 | 가부시키가이샤 에바라 세이사꾸쇼 | 하전입자선에 의한 검사장치 및 그 검사장치를 사용한장치제조방법 |
WO2002013227A1 (fr) | 2000-07-27 | 2002-02-14 | Ebara Corporation | Appareil d'analyse a faisceau plan |
TW539845B (en) * | 2000-07-27 | 2003-07-01 | Ebara Corp | Sheet beam-type inspection device |
US6593152B2 (en) | 2000-11-02 | 2003-07-15 | Ebara Corporation | Electron beam apparatus and method of manufacturing semiconductor device using the apparatus |
US7244932B2 (en) | 2000-11-02 | 2007-07-17 | Ebara Corporation | Electron beam apparatus and device fabrication method using the electron beam apparatus |
EP1273907A4 (en) | 2000-11-17 | 2006-08-30 | Ebara Corp | METHOD AND INSTRUMENT FOR WAFER INSPECTION AND ELECTRON BEAM |
WO2002045153A1 (en) | 2000-12-01 | 2002-06-06 | Ebara Corporation | Inspection method and apparatus using electron beam, and device production method using it |
US7095022B2 (en) | 2000-12-12 | 2006-08-22 | Ebara Corporation | Electron beam apparatus and method of manufacturing semiconductor device using the apparatus |
US6815690B2 (en) | 2002-07-23 | 2004-11-09 | Guardian Industries Corp. | Ion beam source with coated electrode(s) |
US7259378B2 (en) | 2003-04-10 | 2007-08-21 | Applied Process Technologies, Inc. | Closed drift ion source |
WO2022018840A1 (ja) | 2020-07-22 | 2022-01-27 | キヤノンアネルバ株式会社 | イオンガン及び真空処理装置 |
-
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- 2020-07-22 JP JP2021545438A patent/JP6963150B1/ja active Active
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-
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- 2021-06-29 TW TW110123751A patent/TWI793656B/zh active
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-
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- 2022-05-31 US US17/828,312 patent/US11521822B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5763989A (en) * | 1995-03-16 | 1998-06-09 | Front Range Fakel, Inc. | Closed drift ion source with improved magnetic field |
JP2008053116A (ja) * | 2006-08-25 | 2008-03-06 | Ulvac Japan Ltd | イオンガン、及び成膜装置 |
US20120187843A1 (en) * | 2009-08-03 | 2012-07-26 | Madocks John E | Closed drift ion source with symmetric magnetic field |
WO2019182111A1 (ja) * | 2018-03-22 | 2019-09-26 | 株式会社アルバック | イオンガン |
CN109065429A (zh) * | 2018-08-10 | 2018-12-21 | 成都极星等离子科技有限公司 | 一种可降低电子逃逸率的离子源 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11810748B2 (en) | 2020-07-22 | 2023-11-07 | Canon Anelva Corporation | Ion gun and vacuum processing apparatus |
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