WO2022007151A1 - Oled显示装置及制备方法 - Google Patents

Oled显示装置及制备方法 Download PDF

Info

Publication number
WO2022007151A1
WO2022007151A1 PCT/CN2020/112509 CN2020112509W WO2022007151A1 WO 2022007151 A1 WO2022007151 A1 WO 2022007151A1 CN 2020112509 W CN2020112509 W CN 2020112509W WO 2022007151 A1 WO2022007151 A1 WO 2022007151A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
disposed
display device
metal layer
Prior art date
Application number
PCT/CN2020/112509
Other languages
English (en)
French (fr)
Inventor
王雷
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US17/264,262 priority Critical patent/US12010895B2/en
Publication of WO2022007151A1 publication Critical patent/WO2022007151A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present application relates to the field of display technology, and in particular, to an OLED display device and a preparation method thereof.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • Polarizer can effectively reduce the reflectivity of the panel under strong light, but it loses nearly 58% of the light output. This greatly increases the lifespan burden of OLEDs; on the other hand, the polarizers are thick and brittle, which is not conducive to the development of dynamic bending products. In order to develop dynamic bending products based on OLED display technology, new materials, new technologies and new processes must be introduced to replace polarizers.
  • POL-less depolarizer
  • Color film-based POL-less technology is considered to be one of the key technologies to achieve dynamic bending product development.
  • OLED self-luminescence and ambient light due to its own properties, there is still a high reflection effect on OLED self-luminescence and ambient light.
  • the traditional POL-less process technology has been combined with DOT (Direct on-cell touch, built-in touch) technology, but in optical fingerprint recognition, the traditional POL-less structure cannot be used with optical fingerprints due to the shading effect of the black matrix.
  • DOT Direct on-cell touch, built-in touch
  • the fusion of identification technology reduces the application expansion scope of POL-less technology. Therefore, it is necessary to seek a novel OLED display device and preparation method to solve the above problems.
  • the black matrix in the color filter layer easily blocks the reflected light reflected by the finger, resulting in low identification efficiency of the fingerprint sensor.
  • an embodiment of the present application provides an OLED display device, the OLED display device includes: a flexible substrate, a fingerprint recognition sensor disposed on a side of the flexible substrate away from fingerprint contact, a fingerprint recognition sensor disposed on the flexible substrate a TFT array layer on a substrate, an OLED light-emitting functional layer disposed on the TFT array layer, a color filter layer disposed on the OLED light-emitting function layer, and a thin film encapsulation layer disposed on the color filter layer;
  • the fingerprint identification sensor is used to receive the reflected light reflected by the fingerprint of the finger, and identify the fingerprint according to the reflected light;
  • the thin film encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer stacked from bottom to top.
  • the surface of the second inorganic encapsulation layer is provided with a first via hole, the first via hole penetrates the second inorganic encapsulation layer and exposes the organic encapsulation layer, and is located on the surface of the fingerprint identification sensor Above;
  • the first via hole is also filled with a collimating mirror structure, and the collimating mirror structure is used to make the reflected light energy reflected by the fingerprint of the finger converge in different directions, and the reflected light reflected in the vertical direction
  • the light energy is concentrated on the fingerprint identification sensor;
  • the collimating lens structure is a collimating lens, and the collimating lens has a main optical axis, and the main optical axis extends in a vertical direction.
  • the collimating lens is any one of a convex lens, a Fresnel lens, and a microlens array.
  • the TFT array layer includes a barrier layer disposed on the flexible substrate, a buffer layer disposed on the barrier layer, and a buffer layer disposed on the buffer layer.
  • an active layer a first gate insulating layer disposed on the buffer layer and covering the active layer, a first gate metal layer disposed on the first gate insulating layer, and disposed on the first gate a second gate insulating layer on the polar insulating layer and covering the first gate metal layer, a second gate metal layer arranged on the second gate insulating layer, and a second gate insulating layer arranged on the second gate insulating layer an interlayer insulating layer on the layer and covering the second gate metal layer, a source-drain level metal layer disposed on the interlayer insulating layer, and a source-drain level metal layer disposed on the interlayer insulating layer and covering the source and drain levels
  • the planarization layer of the metal layer is a planarization layer of the metal layer.
  • a light shielding layer is further provided on the blocking layer, and the light shielding layer includes a first sub light shielding layer and a second sub light shielding layer, the first sub light shielding layer and the The second sub light-shielding layers are respectively close to both ends of the edge of the fingerprint identification sensor.
  • the OLED light-emitting functional layer includes a pixel definition layer disposed on the planarization layer, and an opening disposed on the planarization layer and located in the pixel definition layer an anode metal layer in the region, an OLED light-emitting layer disposed on the anode metal layer, and a cathode metal layer disposed above the OLED light-emitting layer and the pixel definition layer.
  • the color filter includes a color filter film located in the opening area and a black matrix disposed on the pixel definition layer, and the black matrix corresponds to the pixels A non-open area of the definition layer; a second via hole is further opened on the black matrix, the second via hole penetrates the black matrix and exposes the pixel definition layer, and is located above the fingerprint identification sensor.
  • the cathode metal layer includes a first cathode metal layer on the OLED light-emitting layer and a second cathode metal layer on the black matrix.
  • the first inorganic encapsulation layer is located on the black matrix and completely covers the cathode metal layer, and the first inorganic encapsulation layer also fills the second via hole , the first inorganic encapsulation layer has a groove in the opening area of the pixel definition layer; the color filter film is formed in the groove by an inkjet printing process.
  • an embodiment of the present application further provides an OLED display device, the OLED display device includes: a flexible substrate, a fingerprint recognition sensor disposed on a side of the flexible substrate away from fingerprint contact, a fingerprint recognition sensor disposed on the flexible substrate a TFT array layer on a flexible substrate, an OLED light-emitting functional layer disposed on the TFT array layer, a color filter layer disposed on the OLED light-emitting function layer, and a thin film encapsulation layer disposed on the color filter layer;
  • the fingerprint identification sensor is used to receive the reflected light reflected by the fingerprint of the finger, and identify the fingerprint according to the reflected light;
  • the thin film encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer stacked from bottom to top.
  • the surface of the second inorganic encapsulation layer is provided with a first via hole, the first via hole penetrates the second inorganic encapsulation layer and exposes the organic encapsulation layer, and is located on the surface of the fingerprint identification sensor Above; the first via hole is also filled with a collimating mirror structure, and the collimating mirror structure is used to make the reflected light energy reflected by the fingerprint of the finger converge in different directions, and the reflected light reflected in the vertical direction Light energy is focused on the fingerprint recognition sensor.
  • the TFT array layer includes a barrier layer disposed on the flexible substrate, a buffer layer disposed on the barrier layer, and a buffer layer disposed on the buffer layer.
  • an active layer a first gate insulating layer disposed on the buffer layer and covering the active layer, a first gate metal layer disposed on the first gate insulating layer, and disposed on the first gate a second gate insulating layer on the polar insulating layer and covering the first gate metal layer, a second gate metal layer arranged on the second gate insulating layer, and a second gate insulating layer arranged on the second gate insulating layer an interlayer insulating layer on the layer and covering the second gate metal layer, a source-drain level metal layer disposed on the interlayer insulating layer, and a source-drain level metal layer disposed on the interlayer insulating layer and covering the source and drain levels
  • the planarization layer of the metal layer is a planarization layer of the metal layer.
  • a light shielding layer is further provided on the blocking layer, and the light shielding layer includes a first sub light shielding layer and a second sub light shielding layer, the first sub light shielding layer and the The second sub light-shielding layers are respectively close to both ends of the edge of the fingerprint identification sensor.
  • the OLED light-emitting functional layer includes a pixel definition layer disposed on the planarization layer, and an opening disposed on the planarization layer and located in the pixel definition layer an anode metal layer in the region, an OLED light-emitting layer disposed on the anode metal layer, and a cathode metal layer disposed above the OLED light-emitting layer and the pixel definition layer.
  • the color filter includes a color filter film located in the opening area and a black matrix disposed on the pixel definition layer, and the black matrix corresponds to the pixels A non-open area of the definition layer; a second via hole is further opened on the black matrix, the second via hole penetrates the black matrix and exposes the pixel definition layer, and is located above the fingerprint identification sensor.
  • the cathode metal layer includes a first cathode metal layer on the OLED light-emitting layer and a second cathode metal layer on the black matrix.
  • the first inorganic encapsulation layer is located on the black matrix and completely covers the cathode metal layer, and the first inorganic encapsulation layer also fills the second via hole , the first inorganic encapsulation layer has a groove in the opening area of the pixel definition layer; the color filter film is formed in the groove by an inkjet printing process.
  • the embodiments of the present application further provide a method for preparing an OLED display device as described above, the method comprising:
  • a TFT array layer is prepared on a flexible substrate, and a fingerprint identification sensor is provided on the side of the flexible substrate away from the fingerprint contact;
  • a pixel definition layer is prepared on the TFT array layer, the pixel definition layer defines an open area and a non-open area, and an anode metal layer and an OLED light-emitting layer are sequentially prepared in the open area;
  • a black matrix is prepared on a part of the pixel definition layer located in the non-open area, a first through hole is further opened on the black matrix, the first through hole penetrates the black matrix and exposes the a pixel definition layer located above the fingerprint recognition sensor;
  • a color filter film is formed in the groove by an inkjet printing process, and then an organic packaging layer and a second inorganic packaging layer are sequentially formed on the first inorganic packaging layer, and the organic packaging layer completely covers the Color filter film;
  • the color filter layer is built in between the OLED light-emitting layer and the thin film encapsulation layer, and the outermost layer of the thin film encapsulation layer corresponds to the fingerprint.
  • the position of the identification sensor is provided with a collimating mirror structure, which effectively improves the identification efficiency and identification accuracy of the fingerprint identification sensor in the OLED display device while reducing the overall thickness of the OLED display device.
  • FIG. 1 is a schematic cross-sectional structure diagram of an OLED display device provided by an embodiment of the present application.
  • FIG. 2 is a light path diagram in an OLED display device provided by an embodiment of the present application.
  • FIG. 3 is a flow chart of a method for manufacturing an OLED display device provided by an embodiment of the present application.
  • 4A to 4G are schematic structural diagrams of a method for fabricating an OLED display device according to an embodiment of the present application.
  • the embodiments of the present application are aimed at the prior art OLED display device and preparation method. Since the POL-less structure is integrated with the optical fingerprint identification technology, the black matrix in the color filter layer easily blocks the reflected light from the finger, which leads to the identification of the fingerprint sensor. The technical problem of low efficiency can be solved by this embodiment.
  • FIG. 1 a schematic cross-sectional structure diagram of an OLED display device provided in an embodiment of the present application is shown. It can be clearly seen from the figure that each component of the embodiment of the present application and the relative positional relationship between each component.
  • the OLED display device includes: a flexible substrate 11 , a fingerprint recognition sensor 13 disposed on the side of the flexible substrate 11 away from fingerprint contact, and a TFT array layer 12 disposed on the flexible substrate 11 , the OLED light-emitting function layer 14 disposed on the TFT array layer 12, the color filter layer 15 disposed on the OLED light-emitting function layer 14, and the thin film encapsulation layer 16 disposed on the color filter layer 15;
  • the fingerprint recognition sensor 13 is used to receive the reflected light reflected by the fingerprint of the finger, and identify the fingerprint according to the reflected light;
  • the thin film encapsulation layer 16 includes a first inorganic encapsulation layer 161 and an organic encapsulation layer that are stacked from bottom to top.
  • the surface of the second inorganic encapsulation layer 163 is provided with a first via hole 1631, the first via hole 1631 penetrates the second inorganic encapsulation layer 163 and exposes the organic encapsulation layer 162, and is located above the fingerprint recognition sensor 13; the first via hole 1631 is also filled with a collimating mirror structure 17, and the collimating mirror structure 17 is used to make the reflected light reflected by the fingerprint of the finger toward the Different directions converge, and the reflected light energy reflected in the vertical direction converges on the fingerprint recognition sensor 13 .
  • the collimating lens structure 17 is a collimating lens, so that the collimating lens structure 17 can allow light to pass through;
  • the collimating lens has a main optical axis, and the main optical axis extends in a vertical direction. Therefore, the light reflected in the vertical direction on the finger is parallel to the main optical axis.
  • the collimating lens is any one of a convex lens, a Fresnel lens and a microlens array.
  • the convex lens is a lens with a thicker center and a thinner edge;
  • the Fresnel lens can be a thin sheet made of polyolefin material, or it can be made of glass.
  • One side of the Fresnel lens is a smooth surface, and the other side of the Fresnel lens is engraved with concentric circles from small to large.
  • the microlens array is an array composed of lenses with a clear aperture and a relief depth of micrometers. The microlens not only has basic functions such as focusing and imaging, but also has the characteristics of small size and high integration.
  • the material of the flexible substrate 11 is polyimide, wherein the polyimide has high transparency, low reflectivity, and good thermal stability; the material of the collimating mirror structure 17 is organic resin.
  • the TFT array layer 12 includes a barrier layer 121 provided on the flexible substrate 11 , a buffer layer 122 provided on the barrier layer 121 , and an active layer 123 provided on the buffer layer 122 , a first gate insulating layer 124 disposed on the buffer layer 122 and covering the active layer 123, a first gate metal layer 125 disposed on the first gate insulating layer 124, and a first gate metal layer 125 disposed on the first gate insulating layer 124 A second gate insulating layer 126 on the gate insulating layer 124 and covering the first gate metal layer 125, a second gate metal layer 127 disposed on the second gate insulating layer 126, disposed on The interlayer insulating layer 128 on the second gate insulating layer 126 and covering the second gate metal layer 127 , the source-drain metal layer 129 disposed on the interlayer insulating layer 128 , and the A planarization layer 1210 on the interlayer insulating layer 128 and covering the source-drain level metal
  • the material is at least one of SiNx or SiOx.
  • the materials of the first gate metal layer 125, the second gate metal layer 127 and the source-drain metal layer 129 are all prepared by the first metal layer, which can effectively reduce the process cost;
  • the The first metal layer includes at least one of Mo, Ti, Cu and Ni;
  • the material of the active layer 123 is indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO) and indium gallium zinc tin oxide Any of the things (IGZTO).
  • the OLED light-emitting functional layer 14 includes a pixel definition layer 141 disposed on the planarization layer 1210 , an anode metal layer disposed on the planarization layer 1210 and located in the opening area of the pixel definition layer 141 . 142 .
  • the color filter 15 includes a color filter film 152 located in the opening area and a black matrix 151 disposed on the pixel definition layer 141 .
  • the black matrix 151 is also provided with a second via hole 1511 , the second via hole 1511 penetrates the black matrix 151 and exposes the pixel definition layer 141 and is located on the fingerprint identification sensor 13 . above.
  • the cathode metal layer 144 includes a first cathode metal layer 1441 located on the OLED light-emitting layer 143 and a second cathode metal layer 1442 located on the black matrix 151 .
  • the first inorganic encapsulation layer 161 is located on the black matrix 151 and completely covers the cathode metal layer 144.
  • the first inorganic encapsulation layer 161 also fills the second via holes 1511.
  • the first inorganic encapsulation layer 161 has a groove in the opening area of the pixel definition layer 141; the color filter film 152 is formed in the groove by an inkjet printing process.
  • the blocking layer 121 is further provided with a light-shielding layer
  • the light-shielding layer includes a first sub-light-shielding layer 181 and a second sub-light-shielding layer 182
  • the first sub-light-shielding layer 181 and the second sub-light-shielding layer 182 are respectively close to both ends of the edge of the fingerprint recognition sensor.
  • the material of the light shielding layer is the same as the material of the black matrix 151 .
  • the materials of the first inorganic encapsulation layer 161 and the second inorganic encapsulation layer 163 are both SiNx, and the material of the organic encapsulation layer 162 is an organic photoresist.
  • FIG. 2 a light path diagram in the OLED display device provided by the embodiment of the present application is shown.
  • the outgoing light emitted by the OLED light-emitting layer 152 is reflected by the finger 20 to the collimating mirror structure 17, and the collimating mirror structure 17 makes the reflected light energy converge in different directions, and the reflected light is reflected in the vertical direction.
  • the reflected light energy is concentrated on the fingerprint recognition sensor 13 to avoid reflection and absorption of light from different angles, and to increase the signal amount of the received light.
  • the collimating mirror structure 17 plays a certain role in filtering stray light, which can improve the signal-to-noise ratio of the collected data, thereby effectively improving the recognition efficiency and recognition accuracy of the fingerprint recognition sensor 13 .
  • the light shielding layer disposed on the blocking layer 121 can effectively prevent stray light from being incident on the fingerprint identification sensor 13, and further improve the signal-to-noise ratio of the collected data.
  • the black matrix in the POL-less technology is built into the array structure, and at the same time, the collimating mirror structure is arranged on the upper layer of the thin film encapsulation layer, so as to reduce the overall thickness of the OLED display device and effectively improve the OLED display. Recognition efficiency and recognition accuracy of a fingerprint recognition sensor in a display device.
  • FIG. 3 a flowchart of a method for preparing an OLED display device provided in an embodiment of the present application, wherein the method includes:
  • a TFT array layer 12 is prepared on a flexible substrate 11, and a fingerprint identification sensor 13 is provided on the side of the flexible substrate 11 away from the fingerprint contact.
  • the S10 further includes:
  • a TFT array layer 12 is prepared on a flexible substrate 11; after that, a fingerprint recognition sensor 13 is provided on the side of the flexible substrate 11 away from the fingerprint contact, and the fingerprint recognition sensor 13 is used to receive the reflected signal of the fingerprint of the finger. Reflect the light, and identify the fingerprint according to the reflected light, as shown in Figure 4A.
  • the material of the flexible substrate 11 is polyimide, wherein polyimide has high transparency, low reflectivity, and good thermal stability.
  • the TFT array layer 12 includes a barrier layer 121 provided on the flexible substrate 11 , a buffer layer 122 provided on the barrier layer 121 , and an active layer 123 provided on the buffer layer 122 , a first gate insulating layer 124 disposed on the buffer layer 122 and covering the active layer 123, a first gate metal layer 125 disposed on the first gate insulating layer 124, and a first gate metal layer 125 disposed on the first gate insulating layer 124 A second gate insulating layer 126 on the gate insulating layer 124 and covering the first gate metal layer 125, a second gate metal layer 127 disposed on the second gate insulating layer 126, disposed on The interlayer insulating layer 128 on the second gate insulating layer 126 and covering the second gate metal layer 127 , the source-drain metal layer 129 disposed on the interlayer insulating layer 128 , and the A planarization layer 1210 on the interlayer insulating layer 128 and covering the source-drain level metal
  • the source-drain metal layer 129 is connected to both ends of the active layer 123 through via holes on the second gate insulating layer 126 .
  • the blocking layer 121 is further provided with a light-shielding layer, the light-shielding layer includes a first sub-light-shielding layer 181 and a second sub-light-shielding layer 182 , the first sub-light-shielding layer 181 and the second sub-light-shielding layer 182 They are respectively close to both ends of the edge of the fingerprint recognition sensor 13 .
  • the material is at least one of SiNx or SiOx.
  • the materials of the first gate metal layer 125, the second gate metal layer 127 and the source-drain metal layer 129 are all prepared by the first metal layer, which can effectively reduce the process cost;
  • the The first metal layer includes at least one of Mo, Ti, Cu and Ni;
  • the material of the active layer 123 is indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO) and indium gallium zinc tin oxide Any of the things (IGZTO).
  • a pixel definition layer 141 is prepared on the TFT array layer 12, the pixel definition layer 141 defines an opening area 1411 and a non-open area 1412, and an anode metal layer 142 and an OLED light-emitting layer are sequentially prepared in the opening area 1411 143.
  • the S20 further includes:
  • a pixel definition layer 141 is prepared on the TFT array layer 12.
  • the pixel definition layer 141 defines an opening area 1411 and a non-opening area 1412, and an anode metal layer 142 and an OLED light-emitting layer are sequentially prepared in the opening area 1411. 143, as shown in Figure 4B.
  • a pixel definition layer 141 is prepared on the TFT array layer 12 , the pixel definition layer 141 defines an opening area 1411 and a non-opening area 1412 , and the anode metal layer 142 and the OLED light emission are sequentially prepared in the opening area 1411 layer 143 ; wherein, the anode metal layer 142 is connected to the source-drain level metal layer 129 through via holes on the planarization layer 1210 .
  • a black matrix 151 is formed on a part of the pixel definition layer 141 located in the non-opening area 1412 , and a first through hole 1511 is further opened on the black matrix 151 , and the first through hole 1511 penetrates the black
  • the matrix 151 exposes the pixel definition layer 141 and is located above the fingerprint recognition sensor 13 .
  • the S30 further includes:
  • a black matrix 151 is formed on a part of the pixel definition layer 141 located in the non-opening area 1412 , and a first through hole 1511 is further opened on the black matrix 151 , and the first through hole 1511 penetrates through the black matrix 151 And the pixel definition layer 141 is exposed and located above the fingerprint recognition sensor 13, as shown in FIG. 4C .
  • a metal thin film is formed on the black matrix 151 and the OLED light-emitting layer 143 , and the metal thin film is patterned to form a cathode metal layer 144 .
  • the S40 further includes:
  • a metal thin film is deposited on the black matrix 151 and the OLED light-emitting layer 143 , and the metal thin film is patterned to form a cathode metal layer 144 .
  • the cathode metal layer 144 includes a first cathode metal layer 1441 located on the OLED light-emitting layer 143 and a second cathode metal layer 1442 located on the black matrix 151 , and the second cathode metal layer 1442 does not cover the
  • the first through hole 1511 is shown in FIG. 4D .
  • the first inorganic encapsulation layer 161 has a groove 1611 in the opening region 1411 of the pixel definition layer 141 .
  • the S50 further includes:
  • a first inorganic encapsulation layer 161 is formed on the black matrix 151 , the first inorganic encapsulation layer 161 completely covers the cathode metal layer 144 and fills the first through holes 1511 , and the first inorganic encapsulation layer 161 is in the The opening area 1411 of the pixel definition layer 141 has a groove 1611 .
  • the material of the first inorganic encapsulation layer 161 is SiNx, as shown in FIG. 4E .
  • the S60 further includes:
  • the color filter film 152 is formed in the groove 1611 by an inkjet printing process, and then an organic encapsulation layer 162 and a second inorganic encapsulation layer 163 are sequentially formed on the first inorganic encapsulation layer 161.
  • the organic encapsulation layer 163 The color filter film 152 is completely covered.
  • the organic encapsulation layer 162 is formed by inkjet printing; the material of the second inorganic encapsulation layer 163 is SiNx, and the material of the organic encapsulation layer 162 is organic photoresist, as shown in FIG. 4F .
  • the S70 further includes:
  • photoresist with different thicknesses is prepared on the surface of the second inorganic encapsulation layer 163 by grayscale exposure above the fingerprint identification sensor 13, and then second through holes with different thicknesses are formed by etching 1631, the second through hole 1631 penetrates the second inorganic encapsulation layer 163 and exposes the organic encapsulation layer 162; finally, the second through hole 1631 is filled with an organic resin material to form a collimating mirror structure 17 .
  • the collimating mirror structure 17 plays a certain role in filtering stray light, which can improve the signal-to-noise ratio of the collected data, as shown in FIG. 4G .
  • the collimating lens structure 17 is a collimating lens, so that the collimating lens structure 17 can allow light to pass through;
  • the collimating lens has a main optical axis, and the main optical axis extends in a vertical direction. Therefore, the light reflected in the vertical direction on the finger is parallel to the main optical axis.
  • the collimating lens is any one of a convex lens, a Fresnel lens and a microlens array.
  • the convex lens is a lens with a thicker center and a thinner edge;
  • the Fresnel lens can be a thin sheet made of polyolefin material, or it can be made of glass.
  • One side of the Fresnel lens is a smooth surface, and the other side of the Fresnel lens is engraved with concentric circles from small to large.
  • the microlens array is an array composed of lenses with a clear aperture and a relief depth of micrometers. The microlens not only has basic functions such as focusing and imaging, but also has the characteristics of small size and high integration.
  • the color filter layer is built in between the OLED light-emitting layer and the thin film encapsulation layer, and the outermost layer of the thin film encapsulation layer corresponds to the fingerprint recognition sensor
  • a collimating mirror structure is arranged at the position of the OLED display device, which effectively improves the recognition efficiency and recognition accuracy of the fingerprint recognition sensor in the OLED display device while reducing the overall thickness of the OLED display device.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示装置及制备方法，包括：柔性衬底、指纹识别传感器、TFT阵列层、OLED发光功能层、彩膜层以及薄膜封装层；所述薄膜封装层的最外层开设有第一过孔；所述第一过孔内还填充有准直镜结构，所述准直镜结构用于使手指指纹反射的反射光能朝向不同方向汇聚，且沿竖直方向反射的所述反射光能汇聚在所述指纹识别传感器上。

Description

OLED显示装置及制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种OLED显示装置及制备方法。
 背景技术
OLED(Organic Light-Emitting Diode，简称OLED)器件又称为有机电激光显示装置，具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代薄膜晶体管液晶显示装置(Thinfilm transistor-liquid crystal display，简称TFT-LCD)，有望成为继LCD之后的下一代主流显示技术。
偏光片(POL)能够有效地降低强光下面板的反射率，却损失了接近58％的出光。这对于OLED来说，极大地增加了其寿命负担；另一方面，偏光片厚度较大、材质脆，不利于动态弯折产品的开发。为了开发基于OLED显示技术的动态弯折产品，必须导入新材料、新技术以及新工艺替代偏光片。
使用彩膜(Color Filter)替代偏光片(POL)被归属为POL-less(去偏光片)技术，它不仅能将功能层的厚度从100μm降低至小于5 μm，而且能够将出光率从42%提高至60%。基于彩膜的POL-less技术被认为是实现动态弯折产品开发的关键技术之一。对于旋涂或喷墨打印后的彩膜，由于其自身的性质，仍然对OLED自发光和环境光存在较高的反射作用。
传统的POL-less工艺技术已经在DOT（Direct on-cell touch，内置触控）技术上进行了结合，但是在光学指纹识别上由于黑色矩阵的遮光作用使得传统的POL-less结构无法与光学指纹识别技术融合，降低了POL-less技术的应用扩展范围。因此需要寻求一种新型的OLED显示装置及制备方法以解决上述问题。
 技术问题
现有技术的OLED显示装置及制备方法，由于POL-less结构与光学指纹识别技术融合中，彩膜层中的黑色矩阵容易遮档手指反射的反射光，导致指纹传感器的识别效率低。
 技术解决方案
第一方面，本申请实施例提供一种OLED显示装置，所述OLED显示装置包括：柔性衬底、设置在所述柔性衬底的背离指纹接触的一侧的指纹识别传感器、设置于所述柔性衬底上的TFT阵列层、设置于所述TFT阵列层上的OLED发光功能层、设置于所述OLED发光功能层上的彩膜层以及设置于所述彩膜层上的薄膜封装层；
其中，所述指纹识别传感器用于接收手指指纹反射的反射光，并根据所述反射光识别指纹；所述薄膜封装层包括由下至上层叠设置的第一无机封装层、有机封装层以及第二无机封装层，所述第二无机封装层表面开设有第一过孔，所述第一过孔贯穿所述第二无机封装层并暴露出所述有机封装层，且位于所述指纹识别传感器的上方；所述第一过孔内还填充有准直镜结构，所述准直镜结构用于使手指指纹反射的所述反射光能朝向不同方向汇聚，且沿竖直方向反射的所述反射光能汇聚在所述指纹识别传感器上；所述准直镜结构为准直透镜，所述准直透镜具有主光轴，所述主光轴沿竖直方向延伸。
在本申请实施例所提供的OLED显示装置中，所述准直透镜为凸透镜、菲涅尔透镜以及微透镜阵列中的任意一种。
在本申请实施例所提供的OLED显示装置中，所述TFT阵列层包括设置于所述柔性衬底上的阻挡层、设置于所述阻挡层上的缓冲层、设置于所述缓冲层上的有源层、设置于所述缓冲层上并覆盖有源层的第一栅极绝缘层、设置于所述第一栅极绝缘层上的第一栅极金属层、设置于所述第一栅极绝缘层上并覆盖所述第一栅极金属层的第二栅极绝缘层、设置于所述第二栅极绝缘层上的第二栅极金属层、设置于所述第二栅极绝缘层上并覆盖所述第二栅极金属层的层间绝缘层、设置于所述层间绝缘层上的源漏级金属层以及设置于所述层间绝缘层上并覆盖所述源漏级金属层的平坦化层。
在本申请实施例所提供的OLED显示装置中，所述阻挡层上还设置有遮光层，所述遮光层包括第一子遮光层以及第二子遮光层，所述第一子遮光层以及所述第二子遮光层分别靠近所述指纹识别传感器的边缘两端。
在本申请实施例所提供的OLED显示装置中，所述OLED发光功能层包括设置于所述平坦化层上的像素定义层、设置于所述平坦化层上并位于所述像素定义层的开口区的阳极金属层、设置于所述阳极金属层上的OLED发光层以及设置于所述OLED发光层和所述像素定义层上方的阴极金属层。
在本申请实施例所提供的OLED显示装置中，所述彩膜包括位于所述开口区的彩色滤光膜以及设置于所述像素定义层上的黑色矩阵，所述黑色矩阵对应于所述像素定义层的非开口区；所述黑色矩阵上还开设有第二过孔，所述第二过孔贯穿所述黑色矩阵并暴露出所述像素定义层，且位于所述指纹识别传感器的上方。
在本申请实施例所提供的OLED显示装置中，所述阴极金属层包括位于所述OLED发光层上的第一阴极金属层以及位于所述黑色矩阵上的第二阴极金属层。
在本申请实施例所提供的OLED显示装置中，所述第一无机封装层位于所述黑色矩阵上并完全覆盖所述阴极金属层，所述第一无机封装层还填充所述第二过孔，所述第一无机封装层在所述像素定义层的开口区具有一凹槽；所述彩色滤光膜经喷墨打印工艺形成于所述凹槽内。
第二方面，本申请实施例还提供一种OLED显示装置，所述OLED显示装置包括：柔性衬底、设置在所述柔性衬底的背离指纹接触的一侧的指纹识别传感器、设置于所述柔性衬底上的TFT阵列层、设置于所述TFT阵列层上的OLED发光功能层、设置于所述OLED发光功能层上的彩膜层以及设置于所述彩膜层上的薄膜封装层；
其中，所述指纹识别传感器用于接收手指指纹反射的反射光，并根据所述反射光识别指纹；所述薄膜封装层包括由下至上层叠设置的第一无机封装层、有机封装层以及第二无机封装层，所述第二无机封装层表面开设有第一过孔，所述第一过孔贯穿所述第二无机封装层并暴露出所述有机封装层，且位于所述指纹识别传感器的上方；所述第一过孔内还填充有准直镜结构，所述准直镜结构用于使手指指纹反射的所述反射光能朝向不同方向汇聚，且沿竖直方向反射的所述反射光能汇聚在所述指纹识别传感器上。
在本申请实施例所提供的OLED显示装置中，所述TFT阵列层包括设置于所述柔性衬底上的阻挡层、设置于所述阻挡层上的缓冲层、设置于所述缓冲层上的有源层、设置于所述缓冲层上并覆盖有源层的第一栅极绝缘层、设置于所述第一栅极绝缘层上的第一栅极金属层、设置于所述第一栅极绝缘层上并覆盖所述第一栅极金属层的第二栅极绝缘层、设置于所述第二栅极绝缘层上的第二栅极金属层、设置于所述第二栅极绝缘层上并覆盖所述第二栅极金属层的层间绝缘层、设置于所述层间绝缘层上的源漏级金属层以及设置于所述层间绝缘层上并覆盖所述源漏级金属层的平坦化层。
在本申请实施例所提供的OLED显示装置中，所述阻挡层上还设置有遮光层，所述遮光层包括第一子遮光层以及第二子遮光层，所述第一子遮光层以及所述第二子遮光层分别靠近所述指纹识别传感器的边缘两端。
在本申请实施例所提供的OLED显示装置中，所述OLED发光功能层包括设置于所述平坦化层上的像素定义层、设置于所述平坦化层上并位于所述像素定义层的开口区的阳极金属层、设置于所述阳极金属层上的OLED发光层以及设置于所述OLED发光层和所述像素定义层上方的阴极金属层。
在本申请实施例所提供的OLED显示装置中，所述彩膜包括位于所述开口区的彩色滤光膜以及设置于所述像素定义层上的黑色矩阵，所述黑色矩阵对应于所述像素定义层的非开口区；所述黑色矩阵上还开设有第二过孔，所述第二过孔贯穿所述黑色矩阵并暴露出所述像素定义层，且位于所述指纹识别传感器的上方。
在本申请实施例所提供的OLED显示装置中，所述阴极金属层包括位于所述OLED发光层上的第一阴极金属层以及位于所述黑色矩阵上的第二阴极金属层。
在本申请实施例所提供的OLED显示装置中，所述第一无机封装层位于所述黑色矩阵上并完全覆盖所述阴极金属层，所述第一无机封装层还填充所述第二过孔，所述第一无机封装层在所述像素定义层的开口区具有一凹槽；所述彩色滤光膜经喷墨打印工艺形成于所述凹槽内。
第三方面，本申请实施例又提供一种如上所述的OLED显示装置的制备方法，所述方法包括：
S10，在一柔性衬底制备TFT阵列层，位于所述柔性衬底的背离指纹接触的一侧设置有指纹识别传感器；
S20，在所述TFT阵列层上制备像素定义层，所述像素定义层定义出开口区和非开口区，在所述开口区内依次制备阳极金属层以及OLED发光层；
S30，在位于所述非开口区的部分所述像素定义层上制备黑色矩阵，所述黑色矩阵上还开设有第一通孔，所述第一通孔贯穿所述黑色矩阵并暴露出所述像素定义层，且位于所述指纹识别传感器的上方；
S40，在所述黑色矩阵以及所述OLED发光层上形成一层金属薄膜，所述金属薄膜经图案化后形成阴极金属层；
S50，在所述黑色矩阵上形成第一无机封装层，所述第一无机封装层完全覆盖所述阴极金属层并填充所述第一通孔，所述第一无机封装层在所述像素定义层的开口区具有一凹槽；
S60，通过喷墨打印工艺在所述凹槽内形成彩色滤光膜，之后在所述第一无机封装层上依次形成有机封装层以及第二无机封装层，所述有机封装层完全覆盖所述彩色滤光膜；
S70，在所述第二无机封装层表面开设第二通孔并填充准直镜结构，所述第二通孔贯穿所述第二无机封装层并暴露出所述有机封装层，且位于所述指纹识别传感器的上方。
 有益效果
相较于现有技术，本申请实施例所提供的OLED显示装置及制备方法，通过将彩膜层内置于OLED发光层与薄膜封装层之间，且在薄膜封装层的最外层对应于指纹识别传感器的位置设置了准直镜结构，在降低OLED显示装置整体厚度的同时，有效提升了OLED显示装置中指纹识别传感器的识别效率和识别精度。
 附图说明
图1为本申请实施例提供的OLED显示装置的截面结构示意图。
图2为本申请实施例提供的OLED显示装置中的光线路径图。
图3为本申请实施例提供的OLED显示装置的制备方法流程图。
图4A-图4G为本申请实施例提供的OLED显示装置的制备方法的结构示意图。
 本发明的实施方式
本申请实施例针对现有技术的OLED显示装置及制备方法，由于POL-less结构与光学指纹识别技术融合中，彩膜层中的黑色矩阵容易遮档手指反射的反射光，导致指纹传感器的识别效率低的技术问题，本实施例能够解决该缺陷。
如图1所示，为本申请实施例提供的OLED显示装置的截面结构示意图。从图中可以很直观地看到本申请实施例的各组成部分，以及各组成部分之间的相对位置关系。
具体地，所述OLED显示装置包括：柔性衬底11、设置在所述柔性衬底11的背离指纹接触的一侧的指纹识别传感器13、设置于所述柔性衬底11上的TFT阵列层12、设置于所述TFT阵列层12上的OLED发光功能层14、设置于所述OLED发光功能层14上的彩膜层15以及设置于所述彩膜层15上的薄膜封装层16；
其中，所述指纹识别传感器13用于接收手指指纹反射的反射光，并根据所述反射光识别指纹；所述薄膜封装层16包括由下至上层叠设置的第一无机封装层161、有机封装层162以及第二无机封装层163，所述第二无机封装层163表面开设有第一过孔1631，所述第一过孔1631贯穿所述第二无机封装层163并暴露出所述有机封装层162，且位于所述指纹识别传感器13的上方；所述第一过孔1631内还填充有准直镜结构17，所述准直镜结构17用于使手指指纹反射的所述反射光能朝向不同方向汇聚，且沿竖直方向反射的所述反射光能汇聚在所述指纹识别传感器13上。
进一步地，所述准直镜结构17为准直透镜，从而所述准直镜结构17能供光线穿过；所述准直透镜具有主光轴，所述主光轴沿竖直方向延伸。从而，手指上沿竖直方向反射的光线与主光轴相平行。
进一步地，所述准直透镜为凸透镜、菲涅尔透镜以及微透镜阵列中的任意一种。其中，凸透镜是中央较厚，边缘较薄的透镜；菲涅尔透镜可以是采用聚烯烃材料注压而成的薄片，也可以是采用玻璃制作的。菲涅尔透镜的一侧为光面，菲涅尔透镜的另一侧刻录了由小到大的同心圆。微透镜阵列是由通光孔径及浮雕深度为微米级的透镜组成的阵列。该微透镜不仅具有聚焦、成像等基本功能，而且具有尺寸小、集成度高的特点。
具体地，所述柔性衬底11的材料为聚酰亚胺，其中，聚酰亚胺具有高透明度和低反射率，并且有好的热稳定性；所述准直镜结构17的材料为有机树脂。
具体地，所述TFT阵列层12包括设置于所述柔性衬底11上的阻挡层121、设置于所述阻挡层121上的缓冲层122、设置于所述缓冲层122上的有源层123、设置于所述缓冲层122上并覆盖有源层123的第一栅极绝缘层124、设置于所述第一栅极绝缘层124上的第一栅极金属层125、设置于所述第一栅极绝缘层124上并覆盖所述第一栅极金属层125的第二栅极绝缘层126、设置于所述第二栅极绝缘层126上的第二栅极金属层127、设置于所述第二栅极绝缘层126上并覆盖所述第二栅极金属层127的层间绝缘层128、设置于所述层间绝缘层128上的源漏级金属层129以及设置于所述层间绝缘层128上并覆盖所述源漏级金属层129的平坦化层1210。其中，所述源漏级金属层129经由所述第二栅极绝缘层126上的过孔与所述有源层123的两端相连。
进一步地，所述阻挡层121、所述缓冲层122、所述第一栅极绝缘层124、所述第二栅极绝缘层126、所述层间绝缘层128以及所述平坦化层1210的材料为SiNx或者SiOx的至少一种。
进一步地，所述第一栅极金属层125、所述第二栅极金属层127以及所述源漏级金属层129的材料均通过第一金属层制备，这样可以有效降低制程成本；所述第一金属层包括Mo、Ti、Cu以及Ni中的至少一种；所述有源层123的材料为铟镓锌氧化物（IGZO）、铟锡锌氧化物(ITZO)以及铟镓锌锡氧化物（IGZTO）中的任意一种。
具体地，所述OLED发光功能层14包括设置于所述平坦化层1210上的像素定义层141、设置于所述平坦化层1210上并位于所述像素定义层141的开口区的阳极金属层142、设置于所述阳极金属层142上的OLED发光层143以及设置于所述OLED发光层143和所述像素定义层141上方的阴极金属层144。
具体地，所述彩膜15包括位于所述开口区的彩色滤光膜152以及设置于所述像素定义层141上的黑色矩阵151，所述黑色矩阵151对应于所述像素定义层141的非开口区；所述黑色矩阵151上还开设有第二过孔1511，所述第二过孔1511贯穿所述黑色矩阵151并暴露出所述像素定义层141，且位于所述指纹识别传感器13的上方。
其中，所述阴极金属层144包括位于所述OLED发光层143上的第一阴极金属层1441以及位于所述黑色矩阵151上的第二阴极金属层1442。所述第一无机封装层161位于所述黑色矩阵151上并完全覆盖所述阴极金属层144，所述第一无机封装层161还填充所述第二过孔1511，所述第一无机封装层161在所述像素定义层141的开口区具有一凹槽；所述彩色滤光膜152经喷墨打印工艺形成于所述凹槽内。
具体地，所述阻挡层121上还设置有遮光层，所述遮光层包括第一子遮光层181以及第二子遮光层182，所述第一子遮光层181以及所述第二子遮光层182分别靠近所述指纹识别传感器的边缘两端。其中，所述遮光层的材料与所述黑色矩阵151的材料相同。
具体地，所述第一无机封装层161以及所述第二无机封装层163的材料均为SiNx，所述有机封装层162的材料为有机光阻。
如图2所示，为本申请实施例提供的OLED显示装置中的光线路径图。其中，所述OLED发光层152发出的出射光经过手指20反射至所述准直镜结构17，所述准直镜结构17使所述反射光能朝向不同方向汇聚，且沿竖直方向反射的所述反射光能汇聚在所述指纹识别传感器13上，避免光线不同角度反射被吸收，增加接受光线的信号量。与此同时，所述准直镜结构17对于杂散光的过滤起到一定的作用，可以提高采集数据的信噪比，从而有效提升了所述指纹识别传感器13的识别效率和识别精度。另一方面，所述阻挡层121上设置的所述遮光层能有效防止杂散光入射至所述指纹识别传感器13上，进一步提高了采集数据的信噪比。
本申请实施例通过将POL-less技术中的黑色矩阵内置于阵列结构中，与此同时通过在薄膜封装层的上层设置准直镜结构，在降低OLED显示装置整体厚度的同时，有效提升了OLED显示装置中指纹识别传感器的识别效率和识别精度。
如图3所示，为本申请实施例提供的OLED显示装置的制备方法流程图，其中，所述方法包括：
S10，在一柔性衬底11制备TFT阵列层12，位于所述柔性衬底11的背离指纹接触的一侧设置有指纹识别传感器13。
具体地，所述S10还包括：
首先，在一柔性衬底11制备TFT阵列层12；之后，在位于所述柔性衬底11的背离指纹接触的一侧设置指纹识别传感器13，所述指纹识别传感器13用于接收手指指纹反射的反射光，并根据所述反射光识别指纹，如图4A所示。
具体地，所述柔性衬底11的材料为聚酰亚胺，其中，聚酰亚胺具有高透明度和低反射率，并且有好的热稳定性。
具体地，所述TFT阵列层12包括设置于所述柔性衬底11上的阻挡层121、设置于所述阻挡层121上的缓冲层122、设置于所述缓冲层122上的有源层123、设置于所述缓冲层122上并覆盖有源层123的第一栅极绝缘层124、设置于所述第一栅极绝缘层124上的第一栅极金属层125、设置于所述第一栅极绝缘层124上并覆盖所述第一栅极金属层125的第二栅极绝缘层126、设置于所述第二栅极绝缘层126上的第二栅极金属层127、设置于所述第二栅极绝缘层126上并覆盖所述第二栅极金属层127的层间绝缘层128、设置于所述层间绝缘层128上的源漏级金属层129以及设置于所述层间绝缘层128上并覆盖所述源漏级金属层129的平坦化层1210。其中，所述源漏级金属层129经由所述第二栅极绝缘层126上的过孔与所述有源层123的两端相连。其中，所述阻挡层121上还设置有遮光层，所述遮光层包括第一子遮光层181以及第二子遮光层182，所述第一子遮光层181以及所述第二子遮光层182分别靠近所述指纹识别传感器13的边缘两端。
进一步地，所述阻挡层121、所述缓冲层122、所述第一栅极绝缘层124、所述第二栅极绝缘层126、所述层间绝缘层128以及所述平坦化层1210的材料为SiNx或者SiOx的至少一种。
进一步地，所述第一栅极金属层125、所述第二栅极金属层127以及所述源漏级金属层129的材料均通过第一金属层制备，这样可以有效降低制程成本；所述第一金属层包括Mo、Ti、Cu以及Ni中的至少一种；所述有源层123的材料为铟镓锌氧化物（IGZO）、铟锡锌氧化物(ITZO)以及铟镓锌锡氧化物（IGZTO）中的任意一种。
S20，在所述TFT阵列层12上制备像素定义层141，所述像素定义层141定义出开口区1411和非开口区1412，在所述开口区1411内依次制备阳极金属层142以及OLED发光层143。
具体地，所述S20还包括：
首先，在所述TFT阵列层12上制备像素定义层141，所述像素定义层141定义出开口区1411和非开口区1412，在所述开口区1411内依次制备阳极金属层142以及OLED发光层143，如图4B所示。
具体地，在所述TFT阵列层12上制备像素定义层141，所述像素定义层141定义出开口区1411和非开口区1412，在所述开口区1411内依次制备阳极金属层142以及OLED发光层143；其中，所述阳极金属层142经由所述平坦化层1210上的过孔与所述源漏级金属层129相连。
S30，在位于所述非开口区1412的部分所述像素定义层141上制备黑色矩阵151，所述黑色矩阵151上还开设有第一通孔1511，所述第一通孔1511贯穿所述黑色矩阵151并暴露出所述像素定义层141，且位于所述指纹识别传感器13的上方。
具体地，所述S30还包括：
在位于所述非开口区1412的部分所述像素定义层141上制备黑色矩阵151，所述黑色矩阵151上还开设有第一通孔1511，所述第一通孔1511贯穿所述黑色矩阵151并暴露出所述像素定义层141，且位于所述指纹识别传感器13的上方，如图4C所示。
S40，在所述黑色矩阵151以及所述OLED发光层143上形成一层金属薄膜，所述金属薄膜经图案化后形成阴极金属层144。
具体地，所述S40还包括：
在所述黑色矩阵151以及所述OLED发光层143上沉积一层金属薄膜，所述金属薄膜经图案化后形成阴极金属层144。所述阴极金属层144包括位于所述OLED发光层143上的第一阴极金属层1441以及位于所述黑色矩阵151上的第二阴极金属层1442，所述第二阴极金属层1442未覆盖所述第一通孔1511，如图4D所示。
S50，在所述黑色矩阵151上形成第一无机封装层161，所述第一无机封装层161完全覆盖所述阴极金属层144并填充所述第一通孔1511，所述第一无机封装层161在所述像素定义层141的开口区1411具有一凹槽1611。
具体地，所述S50还包括：
在所述黑色矩阵151上形成第一无机封装层161，所述第一无机封装层161完全覆盖所述阴极金属层144并填充所述第一通孔1511，所述第一无机封装层161在所述像素定义层141的开口区1411具有一凹槽1611。其中，所述第一无机封装层161的材料为SiNx，如图4E所示。
S60，通过喷墨打印工艺在所述凹槽1611内形成彩色滤光膜152，之后在所述第一无机封装层161上依次形成有机封装层162以及第二无机封装层163，所述有机封装层163完全覆盖所述彩色滤光膜152。
具体地，所述S60还包括：
通过喷墨打印工艺在所述凹槽1611内形成彩色滤光膜152，之后在所述第一无机封装层161上依次形成有机封装层162以及第二无机封装层163，所述有机封装层163完全覆盖所述彩色滤光膜152。其中，所述有机封装层162经喷墨打印而成；所述第二无机封装层163的材料为SiNx，所述有机封装层162的材料为有机光阻，如图4F所示。
S70，在所述第二无机封装层163表面开设第二通孔1631并填充准直镜结构17，所述第二通孔1631贯穿所述第二无机封装层163并暴露出所述有机封装层162，且位于所述指纹识别传感器13的上方。
具体地，所述S70还包括：
首先，在所述所述第二无机封装层163表面采用灰度曝光方式在位于所述指纹识别传感器13的上方制备出不同厚度的光阻胶，然后通过刻蚀形成厚度不同的第二通孔1631，所述第二通孔1631贯穿所述第二无机封装层163并暴露出所述有机封装层162；最后，在所述第二通孔1631内填充有机树脂材料，形成准直镜结构17。当所述OLED发光层143发出的光线被指纹遮挡时，形成的反射光线可以通过所述准直镜结构17准直进入到所述指纹识别传感器13，避免光线不同角度反射被吸收，增加接受光线的信号量，与此同时，所述准直镜结构17对于杂散光的过滤起到一定的作用，可以提高采集数据的信噪比，如图4G所示。
进一步地，所述准直镜结构17为准直透镜，从而所述准直镜结构17能供光线穿过；所述准直透镜具有主光轴，所述主光轴沿竖直方向延伸。从而，手指上沿竖直方向反射的光线与主光轴相平行。
进一步地，所述准直透镜为凸透镜、菲涅尔透镜以及微透镜阵列中的任意一种。其中，凸透镜是中央较厚，边缘较薄的透镜；菲涅尔透镜可以是采用聚烯烃材料注压而成的薄片，也可以是采用玻璃制作的。菲涅尔透镜的一侧为光面，菲涅尔透镜的另一侧刻录了由小到大的同心圆。微透镜阵列是由通光孔径及浮雕深度为微米级的透镜组成的阵列。该微透镜不仅具有聚焦、成像等基本功能，而且具有尺寸小、集成度高的特点。
以上各个操作的具体实施可参见前面的实施例，在此不再赘述。
综上所述，本申请实施例所提供的OLED显示装置及制备方法，通过将彩膜层内置于OLED发光层与薄膜封装层之间，且在薄膜封装层的最外层对应于指纹识别传感器的位置设置了准直镜结构，在降低OLED显示装置整体厚度的同时，有效提升了OLED显示装置中指纹识别传感器的识别效率和识别精度。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (16)

  1. 一种OLED显示装置，其中，所述OLED显示装置包括：
    柔性衬底；
    TFT阵列层，设置于所述柔性衬底上；
    OLED发光功能层，设置于所述TFT阵列层上；
    彩膜层，设置于所述OLED发光功能层上；
    薄膜封装层，设置于所述彩膜层上，所述薄膜封装层包括由下至上层叠设置的第一无机封装层、有机封装层以及第二无机封装层，所述第二无机封装层表面开设有第一过孔，所述第一过孔贯穿所述第二无机封装层并暴露出所述有机封装层，且位于所述指纹识别传感器的上方；
    指纹识别传感器，设置在所述柔性衬底的背离指纹接触的一侧，用于接收手指指纹反射的反射光，并根据所述反射光识别指纹；
    其中，所述第一过孔内还填充有准直镜结构，所述准直镜结构用于使手指指纹反射的所述反射光能朝向不同方向汇聚，且沿竖直方向反射的所述反射光能汇聚在所述指纹识别传感器上；所述准直镜结构为准直透镜，所述准直透镜具有主光轴，所述主光轴沿竖直方向延伸。
  2. 根据权利要求1所述的OLED显示装置，其中，所述准直透镜为凸透镜、菲涅尔透镜以及微透镜阵列中的任意一种。
  3. 根据权利要求1所述的OLED显示装置，其中，所述TFT阵列层包括设置于所述柔性衬底上的阻挡层、设置于所述阻挡层上的缓冲层、设置于所述缓冲层上的有源层、设置于所述缓冲层上并覆盖有源层的第一栅极绝缘层、设置于所述第一栅极绝缘层上的第一栅极金属层、设置于所述第一栅极绝缘层上并覆盖所述第一栅极金属层的第二栅极绝缘层、设置于所述第二栅极绝缘层上的第二栅极金属层、设置于所述第二栅极绝缘层上并覆盖所述第二栅极金属层的层间绝缘层、设置于所述层间绝缘层上的源漏级金属层以及设置于所述层间绝缘层上并覆盖所述源漏级金属层的平坦化层。
  4. 根据权利要求3所述的OLED显示装置，其中，所述阻挡层上还设置有遮光层，所述遮光层包括第一子遮光层以及第二子遮光层，所述第一子遮光层以及所述第二子遮光层分别靠近所述指纹识别传感器的边缘两端。
  5. 根据权利要求3所述的OLED显示装置，其中，所述OLED发光功能层包括设置于所述平坦化层上的像素定义层、设置于所述平坦化层上并位于所述像素定义层的开口区的阳极金属层、设置于所述阳极金属层上的OLED发光层以及设置于所述OLED发光层和所述像素定义层上方的阴极金属层。
  6. 根据权利要求5所述的OLED显示装置，其中，所述彩膜包括位于所述开口区的彩色滤光膜以及设置于所述像素定义层上的黑色矩阵，所述黑色矩阵对应于所述像素定义层的非开口区；所述黑色矩阵上还开设有第二过孔，所述第二过孔贯穿所述黑色矩阵并暴露出所述像素定义层，且位于所述指纹识别传感器的上方。
  7. 根据权利要求6所述的OLED显示装置，其中，所述阴极金属层包括位于所述OLED发光层上的第一阴极金属层以及位于所述黑色矩阵上的第二阴极金属层。
  8. 根据权利要求6所述的OLED显示装置，其中，所述第一无机封装层位于所述黑色矩阵上并完全覆盖所述阴极金属层，所述第一无机封装层还填充所述第二过孔，所述第一无机封装层在所述像素定义层的开口区具有一凹槽；所述彩色滤光膜经喷墨打印工艺形成于所述凹槽内。
  9. 一种OLED显示装置，其中，所述OLED显示装置包括：
    柔性衬底；
    TFT阵列层，设置于所述柔性衬底上；
    OLED发光功能层，设置于所述TFT阵列层上；
    彩膜层，设置于所述OLED发光功能层上；
    薄膜封装层，设置于所述彩膜层上，所述薄膜封装层包括由下至上层叠设置的第一无机封装层、有机封装层以及第二无机封装层，所述第二无机封装层表面开设有第一过孔，所述第一过孔贯穿所述第二无机封装层并暴露出所述有机封装层，且位于所述指纹识别传感器的上方；
    指纹识别传感器，设置在所述柔性衬底的背离指纹接触的一侧，用于接收手指指纹反射的反射光，并根据所述反射光识别指纹；
    其中，所述第一过孔内还填充有准直镜结构，所述准直镜结构用于使手指指纹反射的所述反射光能朝向不同方向汇聚，且沿竖直方向反射的所述反射光能汇聚在所述指纹识别传感器上。
  10. 根据权利要求9所述的OLED显示装置，其中，所述TFT阵列层包括设置于所述柔性衬底上的阻挡层、设置于所述阻挡层上的缓冲层、设置于所述缓冲层上的有源层、设置于所述缓冲层上并覆盖有源层的第一栅极绝缘层、设置于所述第一栅极绝缘层上的第一栅极金属层、设置于所述第一栅极绝缘层上并覆盖所述第一栅极金属层的第二栅极绝缘层、设置于所述第二栅极绝缘层上的第二栅极金属层、设置于所述第二栅极绝缘层上并覆盖所述第二栅极金属层的层间绝缘层、设置于所述层间绝缘层上的源漏级金属层以及设置于所述层间绝缘层上并覆盖所述源漏级金属层的平坦化层。
  11. 根据权利要求10所述的OLED显示装置，其中，所述阻挡层上还设置有遮光层，所述遮光层包括第一子遮光层以及第二子遮光层，所述第一子遮光层以及所述第二子遮光层分别靠近所述指纹识别传感器的边缘两端。
  12. 根据权利要求10所述的OLED显示装置，其中，所述OLED发光功能层包括设置于所述平坦化层上的像素定义层、设置于所述平坦化层上并位于所述像素定义层的开口区的阳极金属层、设置于所述阳极金属层上的OLED发光层以及设置于所述OLED发光层和所述像素定义层上方的阴极金属层。
  13. 根据权利要求12所述的OLED显示装置，其中，所述彩膜包括位于所述开口区的彩色滤光膜以及设置于所述像素定义层上的黑色矩阵，所述黑色矩阵对应于所述像素定义层的非开口区；所述黑色矩阵上还开设有第二过孔，所述第二过孔贯穿所述黑色矩阵并暴露出所述像素定义层，且位于所述指纹识别传感器的上方。
  14. 根据权利要求13所述的OLED显示装置，其中，所述阴极金属层包括位于所述OLED发光层上的第一阴极金属层以及位于所述黑色矩阵上的第二阴极金属层。
  15. 根据权利要求13所述的OLED显示装置，其中，所述第一无机封装层位于所述黑色矩阵上并完全覆盖所述阴极金属层，所述第一无机封装层还填充所述第二过孔，所述第一无机封装层在所述像素定义层的开口区具有一凹槽；所述彩色滤光膜经喷墨打印工艺形成于所述凹槽内。
  16. 一种如权利要求9所述的OLED显示装置的制备方法，其中，所述方法包括：
    S10，在一柔性衬底制备TFT阵列层，位于所述柔性衬底的背离指纹接触的一侧设置有指纹识别传感器；
    S20，在所述TFT阵列层上制备像素定义层，所述像素定义层定义出开口区和非开口区，在所述开口区内依次制备阳极金属层以及OLED发光层；
    S30，在位于所述非开口区的部分所述像素定义层上制备黑色矩阵，所述黑色矩阵上还开设有第一通孔，所述第一通孔贯穿所述黑色矩阵并暴露出所述像素定义层，且位于所述指纹识别传感器的上方；
    S40，在所述黑色矩阵以及所述OLED发光层上形成一层金属薄膜，所述金属薄膜经图案化后形成阴极金属层；
    S50，在所述黑色矩阵上形成第一无机封装层，所述第一无机封装层完全覆盖所述阴极金属层并填充所述第一通孔，所述第一无机封装层在所述像素定义层的开口区具有一凹槽；
    S60，通过喷墨打印工艺在所述凹槽内形成彩色滤光膜，之后在所述第一无机封装层上依次形成有机封装层以及第二无机封装层，所述有机封装层完全覆盖所述彩色滤光膜；
    S70，在所述第二无机封装层表面开设第二通孔并填充准直镜结构，所述第二通孔贯穿所述第二无机封装层并暴露出所述有机封装层，且位于所述指纹识别传感器的上方。
PCT/CN2020/112509 2020-07-06 2020-08-31 Oled显示装置及制备方法 WO2022007151A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/264,262 US12010895B2 (en) 2020-07-06 2020-08-31 Organic light emitting diode display device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010638515.XA CN111668284B (zh) 2020-07-06 2020-07-06 Oled显示装置及制备方法
CN202010638515.X 2020-07-06

Publications (1)

Publication Number Publication Date
WO2022007151A1 true WO2022007151A1 (zh) 2022-01-13

Family

ID=72391354

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/112509 WO2022007151A1 (zh) 2020-07-06 2020-08-31 Oled显示装置及制备方法

Country Status (2)

Country Link
CN (1) CN111668284B (zh)
WO (1) WO2022007151A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112319048A (zh) * 2020-09-18 2021-02-05 季华实验室 喷头模组升降调节装置、喷墨打印机和oled显示设备
CN114420047B (zh) * 2020-10-28 2023-07-04 北京小米移动软件有限公司 显示屏，显示屏控制方法及终端
CN112339431B (zh) * 2020-11-05 2022-06-07 武汉国创科光电装备有限公司 一种喷墨印刷多喷头墨路气压控制系统及应用
CN113327966B (zh) * 2021-05-31 2024-02-27 京东方科技集团股份有限公司 一种显示面板及其制备方法
CN113764492A (zh) * 2021-09-08 2021-12-07 京东方科技集团股份有限公司 一种显示面板及其制作方法、显示装置
CN114141837A (zh) * 2021-11-25 2022-03-04 武汉华星光电技术有限公司 一种oled显示模组及显示终端
CN114264323A (zh) * 2021-12-14 2022-04-01 武汉华星光电半导体显示技术有限公司 光学传感器及显示面板
CN115020619B (zh) * 2022-07-08 2024-02-13 武汉华星光电半导体显示技术有限公司 显示面板及移动终端
CN115867088B (zh) * 2023-02-28 2023-05-26 惠科股份有限公司 像素结构及显示面板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109002222A (zh) * 2018-08-29 2018-12-14 武汉华星光电技术有限公司 一种具有指纹识别装置的触控显示屏
CN109271829A (zh) * 2017-07-17 2019-01-25 金佶科技股份有限公司 取像装置
CN109472185A (zh) * 2017-09-08 2019-03-15 奇景光电股份有限公司 嵌设有指纹感测器的平板显示器及其形成方法
CN109471490A (zh) * 2017-09-08 2019-03-15 奇景光电股份有限公司 嵌设有指纹感测器的平板显示器及其形成方法
CN109841661A (zh) * 2019-02-20 2019-06-04 武汉华星光电半导体显示技术有限公司 显示器及其制备方法
US20190346939A1 (en) * 2018-05-08 2019-11-14 Artilux Inc. Display apparatus
CN110808271A (zh) * 2019-11-13 2020-02-18 云谷（固安）科技有限公司 显示面板及显示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110175493B (zh) * 2018-07-13 2021-04-16 神盾股份有限公司 光学指纹感测模块

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109271829A (zh) * 2017-07-17 2019-01-25 金佶科技股份有限公司 取像装置
CN109472185A (zh) * 2017-09-08 2019-03-15 奇景光电股份有限公司 嵌设有指纹感测器的平板显示器及其形成方法
CN109471490A (zh) * 2017-09-08 2019-03-15 奇景光电股份有限公司 嵌设有指纹感测器的平板显示器及其形成方法
US20190346939A1 (en) * 2018-05-08 2019-11-14 Artilux Inc. Display apparatus
CN109002222A (zh) * 2018-08-29 2018-12-14 武汉华星光电技术有限公司 一种具有指纹识别装置的触控显示屏
CN109841661A (zh) * 2019-02-20 2019-06-04 武汉华星光电半导体显示技术有限公司 显示器及其制备方法
CN110808271A (zh) * 2019-11-13 2020-02-18 云谷（固安）科技有限公司 显示面板及显示装置

Also Published As

Publication number Publication date
CN111668284A (zh) 2020-09-15
CN111668284B (zh) 2022-07-12
US20230200184A1 (en) 2023-06-22

Similar Documents

Publication Publication Date Title
WO2022007151A1 (zh) Oled显示装置及制备方法
US11374030B2 (en) Array substrate, manufacturing method thereof, display panel and display device
JP4767242B2 (ja) Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法
JP4866703B2 (ja) 液晶表示装置
US11329258B2 (en) Display panel and manufacture method thereof, display device
US11251202B2 (en) Thin film transistor (TFT) array substrate and display panel
KR102012854B1 (ko) 액정표시장치용 어레이기판 및 그 제조방법
US20190341428A1 (en) Organic light-emitting diode display device
US7453537B2 (en) Transflective liquid crystal display device and method for manufacturing the same
TWI652837B (zh) 感測裝置
US20220336567A1 (en) Display substrate and preparation method therefor, and display apparatus
WO2022028183A1 (zh) 显示基板及其制备方法、显示装置
WO2017012164A1 (zh) Boa型液晶显示面板及其制作方法
TW200402561A (en) Array substrate used for a display device and a method of making the same
CN108807547B (zh) 薄膜晶体管及其制备方法、阵列基板及其制备方法
WO2021233380A1 (zh) 显示面板及其制备方法
CN112420791B (zh) 指纹识别基板及其制备方法、显示装置
US11067840B2 (en) Display panel and display apparatus
KR20120054936A (ko) 액정표시장치
WO2018205596A1 (zh) 薄膜晶体管及其制造方法、阵列基板、显示面板及显示装置
US8045105B2 (en) Thin film transistor array panel and manufacturing method thereof
US12010895B2 (en) Organic light emitting diode display device and manufacturing method thereof
KR20110029921A (ko) 반사투과형 액정표시장치 및 그 제조 방법
WO2023039821A1 (zh) 显示基板及其制备方法和显示装置
WO2022266847A1 (zh) 纹路识别装置以及显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20944705

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20944705

Country of ref document: EP

Kind code of ref document: A1