CN109472185A - 嵌设有指纹感测器的平板显示器及其形成方法 - Google Patents

嵌设有指纹感测器的平板显示器及其形成方法 Download PDF

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CN109472185A
CN109472185A CN201711394261.6A CN201711394261A CN109472185A CN 109472185 A CN109472185 A CN 109472185A CN 201711394261 A CN201711394261 A CN 201711394261A CN 109472185 A CN109472185 A CN 109472185A
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layer
embedded
sensing device
flat
fingerprint sensing
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CN109472185B (zh
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吴易霖
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Himax Technologies Ltd
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Himax Technologies Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133526—Lenses, e.g. microlenses or Fresnel lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
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    • H01L31/0216—Coatings
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    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si
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Abstract

本发明是一种嵌设有指纹感测器的平板显示器及其形成方法。该嵌设有指纹感测器的平板显示器，包含基板；第一介电层，形成于基板的表面；光感测器，形成于第一介电层内；及透镜区，设于光感测器上且于垂直方向对准于光感测器。本发明提供的技术方案具有有效提供移动装置的指纹辨识的优点效果。

Description

嵌设有指纹感测器的平板显示器及其形成方法
技术领域
本发明是有关一种指纹感测器，特别是关于一种嵌设有指纹感测器的平板显示器。
背景技术
移动装置(例如智能型手机)为一种电脑装置，其体积很小而能够以手握持与操作。移动装置通常具有触控荧幕，其占用移动装置的前表面的相当大比例(例如70％)。
当代移动装置可执行很多的功能，并适用于各种的用途，例如交际互动、金融交易、个人或商业通信。鉴于此，通常会使用生物测定(例如指纹)技术来识别使用者及其身分，用以保护储存于移动装置内的机密资料。指纹辨识不但是一种识别使用者的保全方法，且是存取移动装置的一种快速方法。
许多移动装置(例如智能型手机)装设有指纹辨识，其通常包含实体按钮，设于前表面的触控荧幕的外部。移动装置的触控荧幕有逐渐增大的趋势，用以因应移动装置更多更强的功能。然而，将指纹辨识按钮设于移动装置的前表面会阻碍使用大触控荧幕的趋势。
由于传统移动装置的扩展性受到指纹辨识按钮的阻碍，因此亟需提出一种新颖的机制，有效提供移动装置的指纹辨识。
发明内容
鉴于上述，本发明实施例的目的之一在于提出一种嵌设有指纹感测器的平板显示器，例如液晶显示器或有机发光二极管显示器。
根据本发明实施例，平板显示器包含基板、第一介电层、光感测器及透镜区。第一介电层形成于基板的表面。光感测器形成于第一介电层内。透镜区设于光感测器上且于垂直方向对准于光感测器。
述嵌设有指纹感测器的平板显示器，其中该光感测器包含多晶硅层，其一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面。
前述嵌设有指纹感测器的平板显示器，其中该光感测器更包含：金属层，设于该多晶硅层的表面且围绕通道；其中代表指纹的光束通过该透镜区与该通道，再由该光感测器侦测。
前述嵌设有指纹感测器的平板显示器，更包含基部金属层，形成于该第一介电层内且设于该光感测器下，用以作为光屏障以阻挡背光。
前述嵌设有指纹感测器的平板显示器，更包含金属层，设于该光感测器上，用以作为光屏障以阻挡倾斜光。
前述嵌设有指纹感测器的平板显示器，更包含透明的平坦化层，其具有平坦顶面且形成于该第一介电层上。
前述嵌设有指纹感测器的平板显示器，其中该透镜区连接至该平坦化层的顶面且向上延伸。
前述嵌设有指纹感测器的平板显示器，更包含：第二介电层，形成于该平坦化层的表面；及光间隔物，设于该第二介电层上。
前述嵌设有指纹感测器的平板显示器，其中该透镜区设于第二介电层的表面，且平行于该光间隔物。
前述嵌设有指纹感测器的平板显示器，其中该第二介电层包含透明的像素定义层。
前述嵌设有指纹感测器的平板显示器，其中该透镜区连接至该像素定义层的顶面且向上延伸。
前述嵌设有指纹感测器的平板显示器，更包含彩色滤光层，其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
根据本发明实施例，一种嵌设有指纹感测器的平板显示器的形成方法，包含以下步骤但不限定于所述顺序：提供基板；形成第一介电层于该基板的表面；形成光感测器于该第一介电层内；及形成透镜区于该光感测器上且于垂直方向对准于该光感测器。
前述嵌设有指纹感测器的平板显示器的形成方法，其中该光感测器包含多晶硅层，其一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面。
前述嵌设有指纹感测器的平板显示器的形成方法，其中该光感测器更包含：金属层，设于该多晶硅层的表面且围绕通道；其中代表指纹的光束通过该透镜区与该通道，再由该光感测器侦测。
前述嵌设有指纹感测器的平板显示器的形成方法，更包含步骤以形成基部金属层于该第一介电层内且设于该光感测器下，用以作为光屏障以阻挡背光。
前述嵌设有指纹感测器的平板显示器的形成方法，更包含步骤以形成金属层于该光感测器上，用以作为光屏障以阻挡倾斜光。
前述嵌设有指纹感测器的平板显示器的形成方法，更包含步骤以形成透明的平坦化层，其具有平坦顶面且形成于该第一介电层上。
前述嵌设有指纹感测器的平板显示器的形成方法，其中该透镜区连接至该平坦化层的顶面且向上延伸。
前述嵌设有指纹感测器的平板显示器的形成方法，更包含：形成第二介电层于该平坦化层的表面；及形成光间隔物于该第二介电层上。
前述嵌设有指纹感测器的平板显示器的形成方法，其中该透镜区设于第二介电层的表面，且平行于该光间隔物。
前述嵌设有指纹感测器的平板显示器的形成方法，其中该第二介电层包含透明的像素定义层。
前述嵌设有指纹感测器的平板显示器的形成方法，其中该透镜区连接至该像素定义层的顶面且向上延伸。
前述嵌设有指纹感测器的平板显示器的形成方法，更包含步骤以形成彩色滤光层，其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
借由上述技术方案，本发明至少具有以下优点效果：
本发明嵌设有指纹感测器的平板显示器及其形成方法具有有效提供移动装置的指纹辨识的优点。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂，以下特举较佳实施例，并配合附图，详细说明如下。
附图说明
图1的剖视图显示本发明第一实施例的嵌设有指纹感测器的液晶显示器。
图2显示本实施例的指纹感测器的示意图。
图3A至图3I显示图1的液晶显示器的形成方法的剖视图。
图4的剖视图显示本发明第二实施例的嵌设有指纹感测器的液晶显示器。
图5A至图5B显示图4的液晶显示器的形成方法的剖视图。
图6的剖视图显示本发明第三实施例的嵌设有指纹感测器的发光二极管显示器。
图7A至图7I显示图6的发光二极管显示器的形成方法的剖视图。
图8的剖视图显示本发明第四实施例的嵌设有指纹感测器的发光二极管显示器。
图9A至图9B显示图8的发光二极管显示器的形成方法的剖视图。
图10的剖视图显示本发明第五实施例的嵌设有指纹感测器的发光二极管显示器。
图11A至图11B显示图10的发光二极管显示器的形成方法的剖视图。
【主要元件符号说明】
100：液晶显示器 300：液晶显示器
400：发光二极管显示器 500：发光二极管显示器
600：发光二极管显示器 11：薄膜电晶体基板
12：第一介电层 12-1：第一层
12-2：第二层 12-3：第三层
12-4：第四层 12-5：第五层
13：切换薄膜电晶体 130：基部金属层
131：多晶硅层 132：第一金属层
133：第二金属层 134：第三金属层
14：光感测器 14B：选择薄膜电晶体
15：平坦化层 15-1：第一层
15-2：第二层 16：第二介电层
16-1：第一层 16-2：第二层
16-3：第三层 160：像素定义层
161：第一氧化铟锡层 161B：阳极层
162：第二氧化铟锡层 162B：阴极层
17：液晶层 171：光间隔物
18：彩色滤光层 19：彩色滤光基板
20：透镜区 21：光源
22：手指 23：棒状透镜
24：光侦测器 61：包覆层
62：覆盖玻璃 M0：基部金属层
M1：第一金属层 M2：第二金属层
M3：第三金属层 TFT：薄膜电晶体
PLN：平坦化 I TO：氧化铟锡
LC：液晶 CF：彩色滤光
PDL：像素定义层
具体实施方式
图1的剖视图显示本发明第一实施例的嵌设有指纹感测器的液晶显示器(LCD)100，其中指纹感测器整合于液晶显示器100的主动区。液晶显示器100可为薄膜电晶体(TFT)液晶显示器。在一实施例中，薄膜电晶体(TFT)液晶显示器是以低温多晶硅(LTPS)技术形成的，执行于相当低的温度(大约摄氏650度或更低)，相对于传统方法执行于摄氏900度以上。低温多晶硅(LTPS)可用以制造大尺寸液晶显示器。为了便于了解本发明，仅显示与实施例相关的元件。
在本实施例中，液晶显示器100可包含薄膜电晶体(TFT)基板11，其表面形成有第一介电层12。第一介电层12可包含氧化硅或/且氮化硅。用以显示的多个切换薄膜电晶体13形成于第一介电层12内。切换薄膜电晶体13可包含多晶硅层(作为通道)131、第一金属层M1(作为闸极)132设于多晶硅层131上、第二金属层M2(作为源极与汲极)133设于多晶硅层131的表面且围绕第一金属层132，其中第一介电层12隔离第一金属层132与第二金属层133。
根据本实施例的特征之一，至少一个光感测器(或光侦测器)14形成于第一介电层12内。本实施例的光感测器14可包含多晶硅层131与其表面的第二金属层133。第二金属层133围绕通道，用以通过代表指纹的光束，再由光感测器14侦测。多晶硅层131的一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面作为光感测器。此外，基部金属层(M0)130设于第一介电层12内且位于薄膜电晶体基板11的表面，作为第一光屏障，用以阻挡或屏障背光。
在本实施例中，形成至少一个选择薄膜电晶体14B，以配合光感测器14。选择薄膜电晶体14B可包含多晶硅层(作为通道)131、第一金属层M1(作为闸极)132设于多晶硅层131上、第二金属层M2(作为源极与汲极)133设于多晶硅层131的表面且围绕第一金属层132，其中第一介电层12隔离第一金属层132与第二金属层133。选择薄膜电晶体14B借由第二金属层133而连接至相应光感测器14。
本实施例的液晶显示器100可包含光源，例如背光模组(未显示于图式)，设于薄膜电晶体(TFT)基板11下。液晶显示器100的光源可发射可见光或非可见光束。
本实施例的液晶显示器100可包含透明的平坦化(PLN)层15，其具有大致平坦的顶面，且形成于第一介电层12上。平坦化层15可包含透明材质，例如树脂，用以让光线通过。形成第三金属层(M3)134于平坦化层15的底部。第三金属层134可作为第二光屏障，用以阻隔或屏障通道方向以外的(倾斜)光线，使其不会进入光感测器14。
本实施例的液晶显示器100可包含第二介电层16，形成于平坦化层15的表面。第二介电层16可包含氧化硅或/且氮化硅。至少一个导电层形成于第二介电层16内。如图1所例示，所述至少一个导电层可包含第一氧化铟锡(I TO)层161，形成于第二介电层16的底部(例如形成于平坦化层15的表面)；及第二氧化铟锡(I TO)层162，形成于第二介电层16的顶部(例如形成于第一氧化铟锡层161上)。第二介电层16隔离第一氧化铟锡层161与第二氧化铟锡层162。如图1所示，第一氧化铟锡层161可连接至切换薄膜电晶体13的第二金属层133。
本实施例的液晶显示器100可包含液晶(LC)层17，形成于第二介电层16上。至少一个透明的光间隔物(photo spacer)171设于液晶层17内，用以隔离相邻液晶区。液晶显示器100的光间隔物171可包含透明材质，例如树脂。液晶显示器100还可包含彩色滤光(CF)层18，形成于液晶层17上，且设于彩色滤光(CF)基板19的底面。彩色滤光层18可包含多个彩色滤光片，例如红色、绿色及蓝色滤光片，用以分别让红光、绿光及蓝光通过。彩色滤光层18还可包含至少一个黑色滤光片，用以阻隔光线。未被黑色滤光片覆盖的区域为显示区。如图1所示，黑色滤光片大致对准于下方的光间隔物171。在本实施例中，光感测器14位于未被彩色滤光层18的黑色滤光片覆盖的主动显示区。
根据本实施例的又一特征，液晶显示器100可包含至少一个透镜区20，设于光感测器14上并于垂直方向大致对准于光感测器14。在本实施例中，透镜区20连接至平坦化层15的顶面，并向上延伸。透镜区20可包含透明材质，其可相同或异于平坦化层15。透镜区20垂直伸长，并(由下而上依序)通过第二介电层16、液晶层17与彩色滤光层18。
根据上述实施例，嵌设有指纹感测器的液晶显示器100包含光源、透镜区20与光感测器14。图2显示本实施例的指纹感测器的示意图。光源21发射光束至手指22。透镜区20作为棒状透镜(rod l ens)23，用以聚焦反射自指纹的光束。光感测器14作为光侦测器24，用以侦测代表指纹的光束，并将其转换为电子信号。
图3A至图3I显示图1的液晶显示器100的形成方法的剖视图。液晶显示器100的形成顺序可异于图3A至图3I所示。在图3A，形成第一介电层12的第一层12-1于薄膜电晶体基板11的顶面，接着形成基部金属层(M0)130于薄膜电晶体基板11的表面。在图3B，形成第一介电层12的第二层12-2于第一层12-1的表面，接着形成多晶硅层131于第一介电层12的第二层12-1内。光感测器的多晶硅层131的一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面作为光感测器。在图3C，形成第一介电层12的第三层12-3于第二层12-2的表面，接着形成第一金属层(M1)132于第一介电层12的第三层12-3内。在图3D，形成第一介电层12的第四层12-4于第三层12-3的表面，接着形成第二金属层(M2)133于第一介电层12的第四层12-4与第三层12-3内。借此，因而形成切换薄膜电晶体13、光感测器14与选择薄膜电晶体14B于第一介电层12内。在图3E，形成第一介电层12的第五层12-5于第四层12-4的表面。形成平坦化层15的第一层15-1于第一介电层12的表面，接着形成第三金属层(M3)134于平坦化层15的第一层15-1内。在图3F，形成平坦化层15的第二层15-2于第一层15-1的表面，接着形成第二介电层16的第一层16-1与第二层16-2。形成第一氧化铟锡层161于第二介电层16的第二层16-2内，并连接至切换薄膜电晶体13。在图3G，形成第二介电层16的第三层16-3于第二层16-2的表面，接着形成第二氧化铟锡层162于第二介电层16的第三层16-3的表面。接着，形成液晶层17于第二介电层16上，且形成至少一个透明的光间隔物171于液晶层17内，用以隔离相邻液晶区。在图3H，形成至少一个透镜区20于彩色滤光层18、液晶层17及第二介电层16内。透镜区20连接至平坦化层15的顶面，并于垂直方向对准光感测器14。最后，在图3I，形成彩色滤光基板19以覆盖彩色滤光层18。
图4的剖视图显示本发明第二实施例的嵌设有指纹感测器的液晶显示器(LCD)300，其中指纹感测器整合于液晶显示器300的主动区。本实施例类似于第一实施例(图1)，两者之间的差异将说明如下。
在本实施例中，透镜区20设于液晶层17内，且大致平行于光间隔物171。透镜区20可包含透明材质，其可相同或异于光间隔物171。透镜区20垂直伸长，并(由下而上依序)通过液晶层17与彩色滤光层18。
图5A至图5B显示图4的液晶显示器300的形成方法的剖视图。液晶显示器300的形成顺序可异于图5A至图5B所示。本实施例的方法可包含图3A至图3G所示步骤。接下来，在图5A，形成彩色滤光层18于液晶层17上。接着，形成至少一个透镜区20于彩色滤光层18与液晶层17内。透镜区20连接至第二介电层16的顶面，并于垂直方向大致对准于光感测器14。最后，在图5B，形成彩色滤光基板19以覆盖彩色滤光层18。
图6的剖视图显示本发明第三实施例的嵌设有指纹感测器的发光二极管(LED)显示器400，其中指纹感测器整合于发光二极管显示器400的主动区。发光二极管显示器400可为主动式有机发光二极管(AMOLED)显示器。在一实施例中，有机发光二极管(AMOLED)显示器是以低温多晶硅(LTPS)技术形成的，执行于相当低的温度(大约摄氏650度或更低)，相对于传统方法执行于摄氏900度以上。低温多晶硅(LTPS)可用以制造大尺寸发光二极管显示器。为了便于了解本发明，仅显示与实施例相关的元件。
在本实施例中，发光二极管显示器400可包含薄膜电晶体(TFT)基板11，其顶面形成有第一介电层12。第一介电层12可包含氧化硅或/且氮化硅。用以显示的多个切换薄膜电晶体13形成于第一介电层12内。切换薄膜电晶体13可包含多晶硅层(作为通道)131、第一金属层M1(作为闸极)132设于多晶硅层131上、第二金属层M2(作为源极与汲极)133设于多晶硅层131的表面且围绕第一金属层132，其中第一介电层12隔离第一金属层132与第二金属层133。
根据本实施例的特征之一，至少一个光感测器(或光侦测器)14形成于第一介电层12内且形成于薄膜电晶体基板11上。本实施例的光感测器14可包含多晶硅层131与其表面的第二金属层133。第二金属层133围绕通道，用以通过代表指纹的光束，再由光感测器14侦测。多晶硅层131的一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面作为光感测器。
在本实施例中，形成至少一个选择薄膜电晶体14B于第一介电层12内且形成于薄膜电晶体基板11的表面，以配合光感测器14。选择薄膜电晶体14B可包含基部金属层(M0)130设于薄膜电晶体基板11的表面、多晶硅层(作为通道)131设于基部金属层(M0)130上且与其隔离、第一金属层M1(作为闸极)132设于多晶硅层131上、第二金属层M2(作为源极与汲极)133设于多晶硅层131的表面且围绕第一金属层132，其中第一介电层12隔离第一金属层132与第二金属层133。选择薄膜电晶体14B借由第二金属层133而连接至相应光感测器14。
本实施例的发光二极管显示器400可包含透明的平坦化(PLN)层15，其具有大致平坦的顶面，且形成于第一介电层12上。平坦化层15可包含透明材质，例如树脂，用以让光线通过。形成第三金属层(M3)134于平坦化层15的底部。第三金属层134可作为第二光屏障，用以阻隔或屏障通道方向以外的(倾斜)光线，使其不会进入光感测器14。
本实施例的发光二极管显示器400可包含第二介电层16，形成于平坦化层15的表面。第二介电层16可包含氧化硅或/且氮化硅。第二介电层16可包含透明的像素定义层(PDL)160，其可形成于平坦化层15的表面。至少一个导电层形成于第二介电层16内。如图6所例示，所述至少一个导电层可包含阳极层161B，形成于第二介电层16内；及阴极层162B，形成于第二介电层16内且位于阳极层161B上。第二介电层16隔离阳极层161B与阴极层162B。如图6所示，阳极层161B可连接至切换薄膜电晶体13的第二金属层133。发光二极管显示器400还可包含彩色滤光(CF)层18，形成于第二介电层16内(例如形成于阳极层161B与阴极层162B之间)。彩色滤光层18可包含多个彩色滤光片，例如红色、绿色及蓝色滤光片，用以分别让红光、绿光及蓝光通过。在本实施例中，光感测器14位于未被彩色滤光层18的黑色滤光片覆盖的主动显示区。
本实施例的发光二极管显示器400可包含包覆(encapsu l at ion)层61，形成于第二介电层16上。至少一个透明的光间隔物(photo spacer)171设于包覆层61内，用以隔离相邻像素。发光二极管显示器400的光间隔物171可包含透明材质，例如树脂。
根据本实施例的又一特征，发光二极管显示器400可包含至少一个透镜区20，设于光感测器14上并于垂直方向大致对准于光感测器14。在本实施例中，透镜区20连接至平坦化层15的顶面，并向上延伸。透镜区20可包含透明材质，其可相同或异于平坦化层15。透镜区20垂直伸长，并(由下而上依序)通过第二介电层16与包覆层61。发光二极管显示器400还可包含覆盖玻璃62，用以覆盖包覆层61、光间隔物171与透镜区20。
图7A至图7I显示图6的发光二极管显示器400的形成方法的剖视图。发光二极管显示器400的形成顺序可异于图7A至图7I所示。在图7A，形成第一介电层12的第一层12-1于薄膜电晶体基板11的顶面，接着形成基部金属层(M0)130于薄膜电晶体基板11的表面。在图7B，形成第一介电层12的第二层12-2于第一层12-1的表面，接着形成多晶硅层131于第一介电层12的第二层12-1内。光感测器的多晶硅层131的一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面作为光感测器。在图7C，形成第一介电层12的第三层12-3于第二层12-2的表面，接着形成第一金属层(M1)132于第一介电层12的第三层12-3内。在图7D，形成第一介电层12的第四层12-4于第三层12-3的表面，接着形成第二金属层(M2)133于第一介电层12的第四层12-4与第三层12-3内。借此，因而形成切换薄膜电晶体13、光感测器14与选择薄膜电晶体14B于第一介电层12内。在图7E，形成第一介电层12的第五层12-5于第四层12-4的表面。形成平坦化层15的第一层15-1于第一介电层12的表面，接着形成第三金属层(M3)134于平坦化层15的第一层15-1内。在图7F，形成平坦化层15的第二层15-2于第一层15-1的表面，接着形成第二介电层16的第一层16-1与第二层16-2。形成阳极层161B于第二介电层16的第二层16-2内，并连接至切换薄膜电晶体13。在图7G，形成第二介电层16的第三层16-3于第二层16-2的表面，接着形成彩色滤光层18于第二介电层16的第三层16-3内。接着，形成阴极层162B于彩色滤光层18的表面。形成包覆层61于第二介电层16上，且形成至少一个透明的光间隔物171于包覆层61内，用以隔离相邻像素。在图7H，形成至少一个透镜区20于包覆层61与第二介电层16内。透镜区20连接至平坦化层15的顶面，并于垂直方向对准光感测器14。最后，在图7I，形成覆盖玻璃62以覆盖包覆层61、光间隔物171与透镜区20。
图8的剖视图显示本发明第四实施例的嵌设有指纹感测器的发光二极管显示器500，其中指纹感测器整合于发光二极管显示器500的主动区。本实施例类似于第三实施例(图6)，两者之间的差异将说明如下。
在本实施例中，透镜区20设于第二介电层16上(例如形成于阴极层162B的表面)，且大致平行于光间隔物171。透镜区20可包含透明材质，其可相同或异于光间隔物171。
图9A至图9B显示图8的发光二极管显示器500的形成方法的剖视图。发光二极管显示器500的形成顺序可异于图9A至图9B所示。本实施例的方法可包含图7A至图7G所示步骤。接下来，在图9A，形成至少一个透镜区20于包覆层61内。透镜区20连接至第二介电层16的顶面，并于垂直方向大致对准于光感测器14。最后，在图9B，形成覆盖玻璃62以覆盖包覆层61、光间隔物171与透镜区20。
图10的剖视图显示本发明第五实施例的嵌设有指纹感测器的发光二极管显示器600，其中指纹感测器整合于发光二极管显示器600的主动区。本实施例类似于第三实施例(图6)，两者之间的差异将说明如下。
在本实施例中，透镜区20连接至像素定义层160的顶面，并向上延伸。透镜区20可包含透明材质，其可相同或异于像素定义层160。透镜区20垂直伸长，并(由下而上依序)通过第二介电层16与包覆层61。
图11A至图11B显示图10的发光二极管显示器600的形成方法的剖视图。发光二极管显示器600的形成顺序可异于图11A至图11B所示。本实施例的方法可包含图7A至图7G所示步骤。接下来，在图11A，形成至少一个透镜区20于包覆层61与第二介电层16内。透镜区20连接至像素定义层160的顶面，并于垂直方向大致对准于光感测器14。最后，在图11B，形成覆盖玻璃62以覆盖包覆层61、光间隔物171与透镜区20。
以上所述，仅是本发明的较佳实施例而已，并非对本发明做任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明，任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内，当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (24)

1.一种嵌设有指纹感测器的平板显示器，其特征在于包含：
基板；
第一介电层，形成于该基板的表面；
光感测器，形成于该第一介电层内；及
透镜区，设于该光感测器上且于垂直方向对准于该光感测器。
2.根据权利要求1所述嵌设有指纹感测器的平板显示器，其特征在于：其中该光感测器包含多晶硅层，其一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面。
3.根据权利要求2所述嵌设有指纹感测器的平板显示器，其特征在于其中该光感测器更包含：
金属层，设于该多晶硅层的表面且围绕通道；
其中代表指纹的光束通过该透镜区与该通道，再由该光感测器侦测。
4.根据权利要求1所述嵌设有指纹感测器的平板显示器，其特征在于：更包含基部金属层，形成于该第一介电层内且设于该光感测器下，用以作为光屏障以阻挡背光。
5.根据权利要求1所述嵌设有指纹感测器的平板显示器，其特征在于：更包含金属层，设于该光感测器上，用以作为光屏障以阻挡倾斜光。
6.根据权利要求1所述嵌设有指纹感测器的平板显示器，其特征在于：更包含透明的平坦化层，其具有平坦顶面且形成于该第一介电层上。
7.根据权利要求6所述嵌设有指纹感测器的平板显示器，其特征在于：其中该透镜区连接至该平坦化层的顶面且向上延伸。
8.根据权利要求6所述嵌设有指纹感测器的平板显示器，其特征在于更包含：
第二介电层，形成于该平坦化层的表面；及
光间隔物，设于该第二介电层上。
9.根据权利要求8所述嵌设有指纹感测器的平板显示器，其特征在于：其中该透镜区设于第二介电层的表面，且平行于该光间隔物。
10.根据权利要求8所述嵌设有指纹感测器的平板显示器，其特征在于：其中该第二介电层包含透明的像素定义层。
11.根据权利要求10所述嵌设有指纹感测器的平板显示器，其特征在于：其中该透镜区连接至该像素定义层的顶面且向上延伸。
12.根据权利要求1所述嵌设有指纹感测器的平板显示器，其特征在于：更包含彩色滤光层，其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
13.一种嵌设有指纹感测器的平板显示器的形成方法，其特征在于，包含以下步骤但不限定于所述顺序：
提供基板；
形成第一介电层于该基板的表面；
形成光感测器于该第一介电层内；及
形成透镜区于该光感测器上且于垂直方向对准于该光感测器。
14.根据权利要求13所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：其中该光感测器包含多晶硅层，其一端掺杂P型掺杂物，另一端掺杂N型掺杂物，因而形成p-n界面。
15.根据权利要求14所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于，其中该光感测器更包含：
金属层，设于该多晶硅层的表面且围绕通道；
其中代表指纹的光束通过该透镜区与该通道，再由该光感测器侦测。
16.根据权利要求13所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：更包含步骤以形成基部金属层于该第一介电层内且设于该光感测器下，用以作为光屏障以阻挡背光。
17.根据权利要求13所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：更包含步骤以形成金属层于该光感测器上，用以作为光屏障以阻挡倾斜光。
18.根据权利要求13所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：更包含步骤以形成透明的平坦化层，其具有平坦顶面且形成于该第一介电层上。
19.根据权利要求18所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：其中该透镜区连接至该平坦化层的顶面且向上延伸。
20.根据权利要求18所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于更包含：
形成第二介电层于该平坦化层的表面；及
形成光间隔物于该第二介电层上。
21.根据权利要求20所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：其中该透镜区设于第二介电层的表面，且平行于该光间隔物。
22.根据权利要求20所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：其中该第二介电层包含透明的像素定义层。
23.根据权利要求22所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：其中该透镜区连接至该像素定义层的顶面且向上延伸。
24.根据权利要求13所述嵌设有指纹感测器的平板显示器的形成方法，其特征在于：更包含步骤以形成彩色滤光层，其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
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