CN109471490A - 嵌设有指纹感测器的平板显示器及其形成方法 - Google Patents

嵌设有指纹感测器的平板显示器及其形成方法 Download PDF

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CN109471490A
CN109471490A CN201711407161.2A CN201711407161A CN109471490A CN 109471490 A CN109471490 A CN 109471490A CN 201711407161 A CN201711407161 A CN 201711407161A CN 109471490 A CN109471490 A CN 109471490A
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layer
flat
sensing device
embedded
fingerprint sensing
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CN109471490B (zh
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吴易霖
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Himax Technologies Ltd
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Himax Technologies Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16Constructional details or arrangements
    • G06F1/1601Constructional details related to the housing of computer displays, e.g. of CRT monitors, of flat displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • G02F1/133516Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00Arrangements for image or video recognition or understanding
    • G06V10/10Image acquisition
    • G06V10/17Image acquisition using hand-held instruments
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1318Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312Circuits comprising photodetectors for purposes other than feedback
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133357Planarisation layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133526Lenses, e.g. microlenses or Fresnel lenses
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13394Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13398Spacer materials; Spacer properties
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685Top gates
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/104Materials and properties semiconductor poly-Si
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

一种嵌设有指纹感测器的平板显示器,包含基板;光感测器,形成于基板的底面;透镜区,设于光感测器上且于垂直方向对准于光感测器;及光屏障,于垂直方向对准于光感测器,且设于光感测器与透镜区之间。

Description

嵌设有指纹感测器的平板显示器及其形成方法
技术领域
本发明是有关一种指纹感测器,特别是关于一种嵌设有指纹感测器的平板显示器。
背景技术
移动装置(例如智能型手机)为一种电脑装置,其体积很小而能够以手握持与操作。行动装置通常具有触控荧幕,其占用行动装置的前表面的相当大比例(例如70%)。
当代行动装置可执行很多的功能,并适用于各种的用途,例如交际互动、金融交易、个人或商业通信。鉴于此,通常会使用生物测定(例如指纹) 技术来识别使用者及其身分,用以保护储存于行动装置内的机密资料。指纹辨识不但是一种识别使用者的保全方法,且是存取行动装置的一种快速方法。
许多行动装置(例如智慧型手机)装设有指纹辨识,其通常包含实体按钮,设于前表面的触控荧幕的外部。行动装置的触控荧幕有逐渐增大的趋势,用以因应行动装置更多更强的功能。然而,将指纹辨识按钮设于行动装置的前表面会阻碍使用大触控荧幕的趋势。
由于传统行动装置的扩展性受到指纹辨识按钮的阻碍,因此亟需提出一种新颖的机制,有效提供行动装置的指纹辨识。
发明内容
鉴于上述,本发明实施例的目的之一在于提出一种嵌设有指纹感测器的平板显示器,例如液晶显示器或有机发光二极管显示器。
根据本发明实施例,平板显示器包含基板、光感测器、透镜区及光屏障。光感测器形成于基板的底面。透镜区设于光感测器上且于垂直方向对准于光感测器。光屏障于垂直方向对准于光感测器,且设于光感测器与透镜区之间。
所述的嵌设有指纹感测器的平板显示器,更包含第一介电层,形成于该基板的顶面,其中该光屏障形成于该第一介电层内。
所述的嵌设有指纹感测器的平板显示器,其中该光屏障包含:多晶硅层;第一金属层,形成于该多晶硅层上;及第二金属层,形成于该第一金属层的表面;其中该多晶硅层、该第一金属层与该第二金属层围绕一个通道;其中代表指纹的光束通过该透镜区与该通道,再由该光感测器侦测。
所述的嵌设有指纹感测器的平板显示器,更包含透明的平坦化层,其具有平坦顶面且形成于该第一介电层上。
所述的嵌设有指纹感测器的平板显示器,其中该透镜区连接至该平坦化层的顶面且向上延伸。
所述的嵌设有指纹感测器的平板显示器,更包含:第二介电层,形成于该平坦化层的表面;及光间隔物,设于该第二介电层上。
所述的嵌设有指纹感测器的平板显示器,其中该透镜区设于第二介电层的表面,且平行于该光间隔物。
所述的嵌设有指纹感测器的平板显示器,其中该第二介电层包含透明的像素定义层。
所述的嵌设有指纹感测器的平板显示器,其中该透镜区连接至该像素定义层的顶面且向上延伸。
所述的嵌设有指纹感测器的平板显示器,更包含彩色滤光层,其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
本发明的目的还可采用以下技术措施进一步实现。
一种嵌设有指纹感测器的平板显示器的形成方法,包含以下步骤但不限定于所述顺序:提供基板;形成光感测器于该基板的底面;形成透镜区于该光感测器上且于垂直方向对准于该光感测器;及形成光屏障,于垂直方向对准于该光感测器,且设于该光感测器与该透镜区之间。
所述的嵌设有指纹感测器的平板显示器的形成方法,更包含一步骤以形成第一介电层于该基板的顶面,其中该光屏障形成于该第一介电层内。
所述的嵌设有指纹感测器的平板显示器的形成方法,其中该光屏障包含:多晶硅层;第一金属层,形成于该多晶硅层上;及第二金属层,形成于该第一金属层的表面;其中该多晶硅层、该第一金属层与该第二金属层围绕一个通道;其中代表指纹的光束通过该透镜区与该通道,再由该光感测器侦测。
所述的嵌设有指纹感测器的平板显示器的形成方法,更包含一步骤以形成透明的平坦化层,其具有平坦顶面且形成于该第一介电层上。
所述的嵌设有指纹感测器的平板显示器的形成方法,其中该透镜区连接至该平坦化层的顶面且向上延伸。
所述的嵌设有指纹感测器的平板显示器的形成方法,更包含:形成第二介电层于该平坦化层的表面;及形成光间隔物于该第二介电层上。
所述的嵌设有指纹感测器的平板显示器的形成方法,其中该透镜区设于第二介电层的表面,且平行于该光间隔物。
所述的嵌设有指纹感测器的平板显示器的形成方法,其中该第二介电层包含透明的像素定义层。
所述的嵌设有指纹感测器的平板显示器的形成方法,其中该透镜区连接至该像素定义层的顶面且向上延伸。
所述的嵌设有指纹感测器的平板显示器的形成方法,更包含一步骤以形成彩色滤光层,其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
为了使任何熟习相关技艺者了解本发明 的技术内容并据以实施,且根据本说明书所揭露的内容、申请专利范围及图式,任何熟习相关技艺者可轻易的理解本发明 相关的目的及优点,因此将在实施方式中详细叙述本发明 的详细特征以及优点。
附图说明
图1的剖视图显示本发明第一实施例的嵌设有指纹感测器的液晶显示器。
图2显示本实施例的指纹感测器的示意图。
图3A至图3G显示图1的液晶显示器的形成方法的剖视图。
图4的剖视图显示本发明第二实施例的嵌设有指纹感测器的液晶显示器。
图5A至图5B显示图4的液晶显示器的形成方法的剖视图。
图6的剖视图显示本发明第三实施例的嵌设有指纹感测器的发光二极管显示器。
图7A至图7G显示图6的发光二极管显示器的形成方法的剖视图。
图8的剖视图显示本发明第四实施例的嵌设有指纹感测器的发光二极管显示器。
图9A至图9B显示图8的发光二极管显示器的形成方法的剖视图。
图10的剖视图显示本发明第五实施例的嵌设有指纹感测器的发光二极管显示器。
图11A至图11B显示图10的发光二极管显示器的形成方法的剖视图。
【主要元件符号说明】
100:液晶显示器 300:液晶显示器
400:发光二极管显示器 500:发光二极管显示器
600:发光二极管显示器 10:光屏障
11:薄膜电晶体基板 12:第一介电层
12_1:第一层 12_2:第二层
12_3:第三层 13:薄膜电晶体
131:多晶硅层 132:第一金属层
133:第二金属层 14:光感测器
15:平坦化层 16:第二介电层
16_1:第一层 16_2:第二层
160:像素定义层 161:第一氧化铟锡层
161B:阳极层 162:第二氧化铟锡层
162B:阴极层 17:液晶层
171:光间隔物 18:彩色滤光层
19:彩色滤光基板 20:透镜区
21:光源 22:手指
23:棒状透镜 24:光侦测器
61:包覆层 62:覆盖玻璃
M1:第一金属层 M2:第二金属层
TFT:薄膜电晶体 PLN:平坦化
ITO:氧化铟锡 LC:液晶
CF:彩色滤光 PDL:像素定义层
具体实施方式
图1的剖视图显示本发明第一实施例的嵌设有指纹感测器的液晶显示器(LCD)100,其中指纹感测器整合于液晶显示器100的主动区。液晶显示器100可为薄膜电晶体(TFT)液晶显示器。为了便于了解本发明,仅显示与实施例相关的元件。
在本实施例中,液晶显示器100可包含薄膜电晶体(TFT)基板11,其顶面形成有第一介电层12。第一介电层12可包含氧化硅或/且氮化硅。多个薄膜电晶体13形成于第一介电层12内。薄膜电晶体13可包含多晶硅层(作为通道)131、第一金属层M1(作为闸极)132设于多晶硅层131上、第二金属层M2(作为源极与汲极)133设于多晶硅层131的表面且围绕第一金属层 132,其中第一介电层12隔离第一金属层132与第二金属层133。
根据本实施例的特征之一,至少一个光感测器(或光侦测器)14形成于薄膜电晶体(TFT)基板11的底面。光感测器14可包含互补金属氧化物半导体(CMOS)影像感测器。本实施例的液晶显示器100可包含光源,例如背光模块(未显示于图式),设于薄膜电晶体(TFT)基板11下。液晶显示器100 的光源可发射可见光或非可见光束。
根据本实施例的另一特征,光屏障(light barrier)10形成于第一介电层12内,且于垂直方向大致对准于光感测器14。在本实施例中,光屏障 10可包含多晶硅层131、第一金属层132及第二金属层133,用以围绕一个通道。代表指纹的光束通过透镜区20与通道,再由光感测器14侦测。光屏障10可用以阻隔或屏障通道方向以外的(倾斜)光线,使其不会进入光感测器14。
本实施例的液晶显示器100可包含透明的平坦化(PLN)层15,其具有大致平坦的顶面,且形成于第一介电层12上。平坦化层15可包含透明材质,例如树脂,用以让光线通过。
本实施例的液晶显示器100可包含第二介电层16,形成于平坦化层15 的表面。第二介电层16可包含氧化硅或/且氮化硅。至少一个导电层形成于第二介电层16内。如图1所例示,所述至少一个导电层可包含第一氧化铟锡(I TO)层161,形成于第二介电层16的底部(例如形成于平坦化层15的表面);及第二氧化铟锡(I TO)层162,形成于第二介电层16的顶部(例如形成于第一氧化铟锡层161上)。第二介电层16隔离第一氧化铟锡层161与第二氧化铟锡层162。
本实施例的液晶显示器100可包含液晶(LC)层17,形成于第二介电层 16上。至少一个透明的光间隔物(photo spacer)171设于液晶层17内,用以隔离相邻液晶区。液晶显示器100的光间隔物171可包含透明材质,例如树脂。液晶显示器100还可包含彩色滤光(CF)层18,形成于液晶层17上,且设于彩色滤光(CF)基板19的底面。彩色滤光层18可包含多个彩色滤光片,例如红色、绿色及蓝色滤光片,用以分别让红光、绿光及蓝光通过。彩色滤光层18还可包含至少一个黑色滤光片,用以阻隔光线。未被黑色滤光片覆盖的区域为显示区。如图1所示,黑色滤光片大致对准于下方的光间隔物171。在本实施例中,光感测器14位于未被彩色滤光层18的黑色滤光片覆盖的主动显示区。
根据本实施例的又一特征,液晶显示器100可包含至少一个透镜区20,设于光感测器14上并于垂直方向大致对准于光感测器14。在本实施例中,透镜区20连接至平坦化层15的顶面,并向上延伸。透镜区20可包含透明材质,其可相同或异于平坦化层15。透镜区20垂直伸长,并(由下而上依序)通过第二介电层16、液晶层17与彩色滤光层18。
根据上述实施例,嵌设有指纹感测器的液晶显示器100包含光源、透镜区20与光感测器14。图2显示本实施例的指纹感测器的示意图。光源 21发射光束至手指22。透镜区20作为棒状透镜(rod l ens)23,用以聚焦反射自指纹的光束。光感测器14作为光侦测器24,用以侦测代表指纹的光束,并将其转换为电子信号。
图3A至G图3G显示图1的液晶显示器100的形成方法的剖视图。液晶显示器100的形成顺序可异于图3A至图3G所示。于图3A,形成第一介电层12的第一层12_1于薄膜电晶体基板11的顶面,接着形成多晶硅层131 于第一介电层12的第一层12_1内。形成至少一个光感测器(或光侦测器)14 于薄膜电晶体基板11的底面。于图3B,形成第一介电层12的第二层12_2 于第一层12_1的表面,接着形成第一金属层(M1)132于第一介电层12的第二层12_2内。于图3C,形成第一介电层12的第三层12_3于第二层12_2 的表面,接着形成第二金属层(M2)133于第一介电层12的第三层12_3内。借此,因而形成薄膜电晶体13与光屏障10于第一介电层12内。于图3D,形成平坦化层15于第一介电层12上。接着,形成第二介电层16的第一层 16_1于平坦化层15的表面,接着形成第一氧化铟锡层161于第二介电层 16的第一层16_1内。于图3E,形成第二介电层16的第二层16_2于第一层16_1的表面,接着形成第二氧化铟锡层162于第二介电层16的第二层 16_2内。接着,形成液晶层17于第二介电层16上,且形成至少一个透明的光间隔物171于液晶层17内,用以隔离相邻液晶区。于图3F,形成彩色滤光层18于液晶层17上。接着,形成至少一个透镜区20于彩色滤光层18、液晶层17及第二介电层16内。透镜区20连接至平坦化层15的顶面,并向上延伸。最后,于图3G,形成彩色滤光基板19以覆盖彩色滤光层18。
图4的剖视图显示本发明第二实施例的嵌设有指纹感测器的液晶显示器(LCD)300,其中指纹感测器整合于液晶显示器300的主动区。本实施例类似于第一实施例(图1),两者之间的差异将说明如下。
在本实施例中,透镜区20设于液晶层17内,且大致平行于光间隔物 171。透镜区20可包含透明材质,其可相同或异于光间隔物171。透镜区 20垂直伸长,并(由下而上依序)通过液晶层17与彩色滤光层18。
图5A至图5B显示图4的液晶显示器300的形成方法的剖视图。液晶显示器300的形成顺序可异于图5A至图5B所示。本实施例的方法可包含图3A至图3E所示步骤。接下来,于图5A,形成彩色滤光层18于液晶层 17上。接着,形成至少一个透镜区20于彩色滤光层18与液晶层17内。透镜区20连接至第二介电层16的顶面,并于垂直方向大致对准于光感测器 14。最后,于图5B,形成彩色滤光基板19以覆盖彩色滤光层18。
图6的剖视图显示本发明第三实施例的嵌设有指纹感测器的发光二极管(LED)显示器400,其中指纹感测器整合于发光二极管显示器400的主动区。发光二极管显示器400可为主动式有机发光二极管(AMOLED)显示器。为了便于了解本发明,仅显示与实施例相关的元件。
在本实施例中,发光二极管显示器400可包含薄膜电晶体(TFT)基板11,其顶面形成有第一介电层12。第一介电层12可包含氧化硅或/且氮化硅。多个薄膜电晶体13形成于第一介电层12内及薄膜电晶体基板11的表面。薄膜电晶体13可包含多晶硅层(作为通道)131、第一金属层M1(作为闸极)132设于多晶硅层131上、第二金属层M2(作为源极与汲极)132设于多晶硅层131的表面且围绕第一金属层132,其中第一介电层12隔离第一金属层132与第二金属层133。
根据本实施例的特征之一,至少一个光感测器(或光侦测器)14形成于薄膜电晶体(TFT)基板11的底面。光感测器14可包含互补金属氧化物半导体(CMOS)影像感测器。发光二极管显示器400的光源可发射可见光或非可见光束。
根据本实施例的另一特征,光屏障(l ight barr ier)10形成于第一介电层12内,且于垂直方向大致对准于光感测器14。在本实施例中,光屏障 10可包含多晶硅层131、第一金属层132及第二金属层133,用以围绕一个通道。光屏障10可用以阻隔或屏障通道方向以外的(倾斜)光线,使其不会进入光感测器14。
本实施例的发光二极管显示器400可包含透明的平坦化(PLN)层15,其具有大致平坦的顶面,且形成于第一介电层12上。平坦化层15可包含透明材质,例如树脂,用以让光线通过。
本实施例的发光二极管显示器400可包含第二介电层16,形成于平坦化层15的表面。第二介电层16可包含氧化硅或/且氮化硅。第二介电层16 可包含透明的像素定义层(PDL)160,其可形成于平坦化层15的表面。至少一个导电层形成于第二介电层16内。如图6所例示,所述至少一个导电层可包含阳极层161B,形成于第二介电层16的底部(例如形成于平坦化层15 的表面);及阴极层162B,形成于第二介电层16的顶部(例如形成于阳极层161B上)。第二介电层16隔离阳极层161B与阴极层162B。发光二极管显示器400还可包含彩色滤光(CF)层18,形成于第二介电层16内(例如形成于阳极层161B与阴极层162B之间)。彩色滤光层18可包含多个彩色滤光片,例如红色、绿色及蓝色滤光片,用以分别让红光、绿光及蓝光通过。在本实施例中,光感测器14位于未被彩色滤光层18的黑色滤光片覆盖的主动显示区。
本实施例的发光二极管显示器400可包含包覆(encapsu lation)层61,形成于第二介电层16上。至少一个透明的光间隔物(photo spacer)171设于包覆层61内,用以隔离相邻像素。发光二极管显示器400的光间隔物171 可包含透明材质,例如树脂。
根据本实施例的又一特征,发光二极管显示器400可包含至少一个透镜区20,设于光感测器14上并于垂直方向大致对准于光感测器14。在本实施例中,透镜区20连接至平坦化层15的顶面,并向上延伸。透镜区20 可包含透明材质,其可相同或异于平坦化层15。透镜区20垂直伸长,并(由下而上依序)通过第二介电层16与包覆层61。发光二极管显示器400还可包含覆盖玻璃62,用以覆盖包覆层61、光间隔物171与透镜区20。
图7A至图7G显示图6的发光二极管显示器400的形成方法的剖视图。发光二极管显示器400的形成顺序可异于图7A至图7G所示。于图7A,形成第一介电层12的第一层12_1于薄膜电晶体基板11的顶面,接着形成多晶硅层131于第一介电层12的第一层12_1内。形成至少一个光感测器(或光侦测器)14于薄膜电晶体基板11的底面。于图7B,形成第一介电层12 的第二层12_2于第一层12_1的表面,接着形成第一金属层(M1)132于第一介电层12的第二层12_2内。于图7C,形成第一介电层12的第三层12_3 于第二层12_2的表面,接着形成第二金属层(M2)133于第一介电层12的第三层12_3内。借此,因而形成薄膜电晶体13与光屏障10于第一介电层12 内。于图7D,形成平坦化层15于第一介电层12上。接着,形成第二介电层16的第一层16_1于平坦化层15的表面,接着形成阳极层161B于第二介电层16的第一层16_1内。在本实施例中,第二介电层16可包含透明的像素定义层(PDL)160。于图7E,形成第二介电层16的第二层16_2于第一层16_1的表面,接着形成彩色滤光层18于第二介电层16的第二层16_2 内。接着,形成阴极层162B于第二介电层16的第二层16_2的表面。形成包覆层61于第二介电层16上,且形成至少一个透明的光间隔物171于包覆层61内,用以隔离相邻像素。于图7F,形成至少一个透镜区20于包覆层61及第二介电层16内。透镜区20连接至平坦化层15的顶面,并向上延伸。最后,于图7G,形成覆盖玻璃62以覆盖包覆层61、光间隔物171 与透镜区20。
图8的剖视图显示本发明第四实施例的嵌设有指纹感测器的发光二极管显示器500,其中指纹感测器整合于发光二极管显示器500的主动区。本实施例类似于第三实施例(图6),两者之间的差异将说明如下。
在本实施例中,透镜区20设于第二介电层16上(例如形成于阴极层 162B的表面),且大致平行于光间隔物171。透镜区20可包含透明材质,其可相同或异于光间隔物171。
图9A至图9B显示图8的发光二极管显示器500的形成方法的剖视图。发光二极管显示器500的形成顺序可异于图9A至图9B所示。本实施例的方法可包含图7A至图7E所示步骤。接下来,于图9A,形成至少一个透镜区20于包覆层61内。透镜区20连接至第二介电层16的顶面,并于垂直方向大致对准于光感测器14。最后,于图9B,形成覆盖玻璃62以覆盖包覆层61、光间隔物171与透镜区20。
图10的剖视图显示本发明第五实施例的嵌设有指纹感测器的发光二极管显示器600,其中指纹感测器整合于发光二极管显示器600的主动区。本实施例类似于第三实施例(图6),两者之间的差异将说明如下。
在本实施例中,透镜区20连接至像素定义层160的顶面,并向上延伸。透镜区20可包含透明材质,其可相同或异于像素定义层160。透镜区20垂直伸长,并(由下而上依序)通过第二介电层16与包覆层61。
图11A至图11B显示图10的发光二极管显示器600的形成方法的剖视图。发光二极管显示器600的形成顺序可异于图11A至图11B所示。本实施例的方法可包含图7A至图7E所示步骤。接下来,于A图11A,形成至少一个透镜区20于包覆层61与第二介电层16内。透镜区20连接至像素定义层160的顶面,并于垂直方向大致对准于光感测器14。最后,于图11B,形成覆盖玻璃62以覆盖包覆层61、光间隔物171与透镜区20。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。

Claims (20)

1.一种嵌设有指纹感测器的平板显示器,其特征在于,包含:
基板;
光感测器,形成于该基板的底面;
透镜区,设于该光感测器上且于垂直方向对准于该光感测器;及
光屏障,于垂直方向对准于该光感测器,且设于该光感测器与该透镜区之间。
2.根据权利要求1所述的嵌设有指纹感测器的平板显示器,其特征在于,更包含第一介电层,形成于该基板的顶面,其中该光屏障形成于该第一介电层内。
3.根据权利要求2所述的嵌设有指纹感测器的平板显示器,其特征在于,其中该光屏障包含:
多晶硅层;
第一金属层,形成于该多晶硅层上;及
第二金属层,形成于该第一金属层的表面;
其中该多晶硅层、该第一金属层与该第二金属层围绕一个通道;
其中代表指纹的光束通过该透镜区与该通道,再由该光感测器侦测。
4.根据权利要求2所述的嵌设有指纹感测器的平板显示器,其特征在于,更包含透明的平坦化层,其具有平坦顶面且形成于该第一介电层上。
5.根据权利要求4所述的嵌设有指纹感测器的平板显示器,其特征在于,其中该透镜区连接至该平坦化层的顶面且向上延伸。
6.根据权利要求4所述的嵌设有指纹感测器的平板显示器,其特征在于,更包含:
第二介电层,形成于该平坦化层的表面;及
光间隔物,设于该第二介电层上。
7.根据权利要求6所述的嵌设有指纹感测器的平板显示器,其特征在于,其中该透镜区设于第二介电层的表面,且平行于该光间隔物。
8.根据权利要求6所述的嵌设有指纹感测器的平板显示器,其特征在于,其中该第二介电层包含透明的像素定义层。
9.根据权利要求8所述的嵌设有指纹感测器的平板显示器,其特征在于,其中该透镜区连接至该像素定义层的顶面且向上延伸。
10.根据权利要求1所述的嵌设有指纹感测器的平板显示器,其特征在于,更包含彩色滤光层,其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
11.一种嵌设有指纹感测器的平板显示器的形成方法,其特征在于,包含以下步骤但不限定于所述顺序:
提供基板;
形成光感测器于该基板的底面;
形成透镜区于该光感测器上且于垂直方向对准于该光感测器;及
形成光屏障,于垂直方向对准于该光感测器,且设于该光感测器与该透镜区之间。
12.根据权利要求11所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,更包含一步骤以形成第一介电层于该基板的顶面,其中该光屏障形成于该第一介电层内。
13.根据权利要求12所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,其中该光屏障包含:
多晶硅层;
第一金属层,形成于该多晶硅层上;及
第二金属层,形成于该第一金属层的表面;
其中该多晶硅层、该第一金属层与该第二金属层围绕一个通道;
其中代表指纹的光束通过该透镜区与该通道,再由该光感测器侦测。
14.根据权利要求12所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,更包含一步骤以形成透明的平坦化层,其具有平坦顶面且形成于该第一介电层上。
15.根据权利要求14所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,其中该透镜区连接至该平坦化层的顶面且向上延伸。
16.根据权利要求14所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,更包含:
形成第二介电层于该平坦化层的表面;及
形成光间隔物于该第二介电层上。
17.根据权利要求16所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,其中该透镜区设于第二介电层的表面,且平行于该光间隔物。
18.根据权利要求16所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,其中该第二介电层包含透明的像素定义层。
19.根据权利要求18所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,其中该透镜区连接至该像素定义层的顶面且向上延伸。
20.根据权利要求11所述的嵌设有指纹感测器的平板显示器的形成方法,其特征在于,更包含一步骤以形成彩色滤光层,其中该光感测器位于未被该彩色滤光层的黑色滤光片覆盖的主动显示区。
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