WO2021258473A1 - 蒸镀系统及蒸镀方法 - Google Patents

蒸镀系统及蒸镀方法 Download PDF

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Publication number
WO2021258473A1
WO2021258473A1 PCT/CN2020/103398 CN2020103398W WO2021258473A1 WO 2021258473 A1 WO2021258473 A1 WO 2021258473A1 CN 2020103398 W CN2020103398 W CN 2020103398W WO 2021258473 A1 WO2021258473 A1 WO 2021258473A1
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Prior art keywords
substrate
evaporation
vacuum chamber
evaporation source
outlet
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PCT/CN2020/103398
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English (en)
French (fr)
Inventor
马昆松
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武汉华星光电半导体显示技术有限公司
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Priority to US17/263,121 priority Critical patent/US20220190305A1/en
Publication of WO2021258473A1 publication Critical patent/WO2021258473A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the invention relates to the field of display, in particular to an evaporation system and an evaporation method.
  • OLED organic electroluminescent display
  • evaporation requires a vacuum environment, it takes a long time to replace supplementary materials, especially the metal coating chamber, which is a high-temperature point source, and only one substrate can be evaporated at a time, which will affect the improvement of production cycle. Evaporating multiple materials in the same chamber can easily cause cross-contamination between each other and affect the quality of the device.
  • the present invention provides an evaporation system and an evaporation method, which can improve production efficiency, reduce production costs, and improve product quality.
  • the present invention provides an evaporation system, including: a transport device for carrying and transporting a plurality of substrates to be evaporated; a first vacuum chamber for receiving the substrate and vertically evaporating Plating the substrate; the first vacuum chamber includes: a first inlet, the conveying device horizontally conveys the substrate to the first inlet; a turning device for turning the substrate from a horizontal state to a vertical state State; the evaporation source, which is arranged vertically in the middle of the first vacuum chamber, the substrate after inversion is arranged in parallel with the evaporation source and is arranged on both sides of the evaporation source; and the first outlet, the evaporation is good
  • the substrate is transported out of the first outlet; wherein, both sides of the evaporation source are provided with ejection outlets, and the center of the ejection outlet is consistent with the center of the substrate, so as to perform simultaneous processing on the substrates located on both sides of the evaporation source. Evaporation.
  • the conveying device includes: a guide rail; and a carrier, which is slidably connected to the guide rail.
  • the vapor deposition system further includes an alignment system for aligning the substrate to be vapor deposited with the first mask plate, and then place it on the stage and interact with the load. Bench fit.
  • the substrate and the conveying device are in a vertical state in the first vacuum chamber; the substrate and the conveying device are in a horizontal state before entering the first vacuum chamber.
  • the vapor deposition system further includes: an exchange device for receiving the substrate vapor-deposited from the first outlet, and replacing the first mask plate of the substrate with a second mask plate to perform Align and transfer to the second vacuum chamber for evaporation again;
  • the second vacuum chamber includes: a second inlet for receiving the substrate replaced with the second mask plate; and a turning device for The plurality of substrates are turned from the horizontal state to the vertical state;
  • the evaporation source is vertically arranged in the middle of the second vacuum chamber, and the substrate after the inversion is arranged in parallel with the evaporation source and is arranged at the bottom of the evaporation source.
  • the evaporation source includes: a nozzle arranged at the jet outlet; a main structure in which an evaporation material, a heating system and a water cooling system are arranged; and a flow guide device arranged on the main structure , Used to transport the heated vapor deposition material to the nozzle.
  • the flow guiding device is perpendicular or parallel to the main structure.
  • the first vacuum chamber includes a plurality of sub-vacuum chambers; the plurality of sub-vacuum chambers are communicated with each other by laying guide rails; the evaporation source is slidably connected to the guide rail to be used in the sub-vacuum chamber The chamber is vapor-deposited.
  • the water cooling system includes a water inlet and a water outlet; the water flow speeds of the water inlet and the water outlet are the same to keep the water cooling system in a dynamic equilibrium state.
  • the present invention also provides an evaporation method, including: providing the evaporation system; aligning the substrate to be evaporated with the first mask and attaching the substrate together with the stage; The substrate is transferred to the plurality of sub-vacuum chambers of the first vacuum chamber, the substrate is arranged in parallel on both sides of the evaporation source; the evaporation source is moved in the plurality of sub-vacuum chambers, and the The substrate is vapor-deposited.
  • the present invention provides an evaporation system and an evaporation method.
  • the evaporation source vertically in a vacuum chamber, a plurality of substrates are arranged on both sides of the deep evaporation source. Evaporating the substrates on both sides can improve the production cycle, reduce production costs, and improve product quality.
  • the vacuum chamber is set into multiple sub-vacuum chambers, which can further vapor-deposit multiple substrates, and by using one vapor-deposition source to vapor-deposit different sub-vacuum chambers, the cost is reduced.
  • Fig. 1 is a schematic plan view of the evaporation system provided by the present invention.
  • FIG. 2 is a schematic diagram of the structure of the substrate, the mask plate and the stage attached to the substrate provided by the present invention.
  • Fig. 3 is a perspective view of the first vacuum chamber provided by the present invention.
  • Fig. 4 is a schematic diagram of the structure of the evaporation source provided by the present invention.
  • Figure 5 is a plan view of the nozzle provided by the present invention.
  • Fig. 6 is a schematic diagram of the double-sided evaporation structure of the evaporation source provided by the present invention.
  • Fig. 7 is a perspective view of a first vacuum chamber with a vertical structure provided by the present invention.
  • FIG. 8 is a schematic diagram of the structure of the substrate and the conveying device provided by the present invention in a vertical state.
  • Fig. 9 is a schematic plan view of the second vacuum chamber provided by the present invention.
  • Evaporation system 100 substrate 10; mask 11;
  • the present invention provides an evaporation system 100, which includes: a conveying device 101, a first vacuum chamber 102, and an alignment system.
  • the alignment system is used to align the substrate 10 to be vapor-deposited with the first mask 11, and then place it on the stage 1012 and attach it to the stage 1012. combine.
  • the conveying device 101 is used to carry and convey the substrate 10 to be vapor-deposited.
  • the conveying device 101 includes a guide rail 1011 and a stage 1012.
  • the stage 1012 is slidably connected to the guide rail 1011. In FIG. 1, since the substrate 10 is disposed above the stage 1012, the stage 1012 is not shown in the top view.
  • the first vacuum chamber 102 includes a plurality of sub-vacuum chambers 1021.
  • the plurality of sub-vacuum chambers 1021 are connected to each other by laying guide rails 1023 (refer to 1023 in FIG. 3 ); the evaporation source 1022 is slidably connected to the guide rails 1023 for vapor deposition in the plurality of sub-vacuum chambers 1021.
  • a plurality of substrates to be evaporated 10 are vertically arranged on both sides of each sub-vacuum chamber 1021.
  • the substrate 10 can be vapor-deposited, the substrate 10 can be vapor-deposited faster, the production cycle can be improved, the production cost can be reduced, and the product quality can be improved.
  • the first vacuum chamber 102 is used to receive the substrate 10 and evaporate the plurality of substrates 10 vertically.
  • the first vacuum chamber 102 includes: a first inlet, a turning device, an evaporation source 1022, and a first outlet.
  • the conveying device 101 horizontally conveys a plurality of substrates 10 to the first inlet.
  • the turning device is used to turn the plurality of substrates 10 from a horizontal state to a vertical state.
  • the evaporation source 1022 is vertically arranged in the middle of the first vacuum chamber 102, and the substrate 10 after inversion is arranged in parallel with the evaporation source 1022 and is arranged on both sides of the evaporation source 1022.
  • the two sides of the evaporation source 1022 have spray outlets 1022-7, which are used to vaporize the substrates 10 on both sides at the same time, so that the evaporation efficiency can be increased.
  • the center of the ejection outlet coincides with the center of the substrate 10. Finally, the vapor-deposited substrate 10 is transported out of the first outlet.
  • the evaporation source 1022 includes a nozzle 1024, a main structure 1022-1, and a flow guiding device 1022-2.
  • the nozzle 1024 is provided at the ejection outlet 1022-7.
  • the opening angle of the nozzle 1024 can be adjusted to adjust the vapor deposition angle.
  • Fig. 5 is a top view of the nozzle 1024, which is aligned with the vapor deposition surface of the substrate 10.
  • Fig. 5 only shows a single-sided vapor deposition.
  • FIG. 6 is a schematic diagram of the double-sided vapor deposition of the inventive point of the present invention.
  • the nozzle 1024 vaporizes the substrate 10 on both sides, which can improve the vapor deposition efficiency.
  • the main structure 1022-1 is provided with an evaporation material, a heating system 1022-3, and a water cooling system 1022-4.
  • the flow guiding device 1022-2 is arranged on the main structure 1022-1, and is used to deliver the heated vapor deposition material to the nozzle 1024.
  • the flow guiding device 1022-2 is perpendicular or parallel to the main structure 1022-1.
  • the evaporation source 1022 is a line source. If the structure at this time can cover the entire substrate 10, the evaporation source 1022 can be fixed; if the size is not enough, the evaporation needs to be moved while evaporation, so that the entire substrate 10 can be evaporated.
  • the evaporation source 1022 is a line source.
  • the design size of the evaporation source 1022 structure is small and the material utilization rate is higher. The cost is lower.
  • the evaporation source 1022 may also be a line source.
  • the heating system 1022-3 includes a heating resistor for heating and generating heat.
  • the water-cooling system 1022-4 includes a water inlet 1022-5 and a water outlet 1022-6; the water inlet 1022-5 and the water outlet 1022-6 have the same water flow velocity, so that the water cooling system 1022 -4 Maintain a dynamic equilibrium state.
  • the substrate 10 and the conveying device 101 are in a horizontal state before entering the first vacuum chamber 102. After being turned by the turning device, as shown in FIG. 8, the substrate 10 and the conveying device 101 are in a vertical state in the first vacuum chamber 102.
  • the evaporation system 100 further includes an exchange device and a second vacuum chamber 103.
  • the exchange device is used to receive the substrate 10 vapor-deposited from the first outlet, and replace the first mask 11 with a second mask.
  • the alignment and bonding are performed again by the alignment system, and are transferred to the second vacuum chamber 103 and vapor-deposited again.
  • the film deposited in the second vacuum chamber is different from the film deposited in the first vacuum chamber 102.
  • the second vacuum chamber 103 is arranged downstream of the first vacuum chamber 102.
  • the second vacuum chamber 103 includes: a second inlet, a turning device, an evaporation source 1022, and a second outlet.
  • the second inlet is used to receive the substrate 10 replaced with a second mask.
  • the turning device is used to turn the plurality of substrates 10 from a horizontal state to a vertical state.
  • the evaporation source 1032 is vertically arranged in the middle of the second vacuum chamber, and the substrate 10 after inversion is arranged in parallel with the evaporation source 1032 and is arranged on both sides of the evaporation source 1032.
  • the specific structure of the evaporation source 1032 refers to the structure of the evaporation source 1022 of the first vacuum chamber 102.
  • the second outlet is used to transport the vapor-deposited substrate 10 out of the second outlet.
  • the first vacuum chamber 103 includes a plurality of sub-vacuum chambers 1031.
  • the plurality of sub-vacuum chambers 1031 are connected to each other by laying guide rails; the evaporation source 1032 is slidably connected to the guide rail for vapor deposition in the plurality of sub-vacuum chambers 1031.
  • the present invention provides an evaporation system 100.
  • a plurality of substrates 10 are arranged on both sides of the deep evaporation source, so that the substrates 10 on both sides can be evaporated.
  • the vacuum chamber is set into multiple sub-vacuum chambers, which can further vapor-deposit multiple substrates 10, and by using one vapor-deposition source to vapor-deposit different sub-vacuum chambers, the cost is reduced.
  • the present invention also provides an evaporation method, which includes the following steps.
  • An evaporation system 100 as described is provided.
  • the substrate 10 to be vapor deposited is aligned with the first mask 11 and bonded together with the stage 1012.
  • the substrate 10 is transferred to a plurality of sub-vacuum chambers of the first vacuum chamber 102, and the substrate 10 is arranged on both sides of the evaporation source 1022 in parallel.
  • the evaporation source 1022 is moved in a plurality of sub-vacuum chambers to evaporate the substrate 10.
  • the substrate 10 is turned and reset, and the substrate 10 is placed horizontally.
  • the first mask is replaced with the second mask, and then the second mask is aligned with the substrate 10 and attached to the stage 1012.
  • the substrate 10 is transferred to the second vacuum chamber, and is respectively arranged vertically on both sides of the second vacuum chamber, the evaporation source 1022 is moved, and the substrate 10 is evaporated again.

Abstract

本发明提供一种蒸镀系统及蒸镀方法，通过在真空腔室中，将蒸镀源垂直设置，将多个基板设置在深蒸镀源的两侧，进而可以对两侧的基板进行蒸镀，可以提高生产节拍，降低生产成本，提高产品质量。

Description

蒸镀系统及蒸镀方法 技术领域
本发明涉及显示领域，尤其是涉及一种蒸镀系统及蒸镀方法。
 背景技术
有机电致发光显示器（OLED）的发光层的制备通过蒸镀工艺来完成，目前蒸镀机台设计通常为多层膜层结构在同一个腔室内蒸镀完成。
 技术问题
因为蒸镀需要真空环境，每次更换补充材料就需要很长时间，尤其是金属镀膜腔室，都是高温点源，并且每次只能蒸镀一片基板，这会影响生产节拍的提高。在同一个腔室蒸镀多种材料，也容易造成相互之间的交叉污染，影响器件的品质。
因此，急需提供一种蒸镀系统及蒸镀方法，可以提高生产节拍，降低生产成本，提高产品质量。
 技术解决方案
为了解决上述技术问题，本发明提供一种蒸镀系统及蒸镀方法，可以提高生产效率，降低生产成本，提高产品质量。
具体地，为了实现上述方法，本发明提供一种蒸镀系统，包括：搬运装置，用以承载并搬运待蒸镀的多个基板；第一真空腔室，用以接受所述基板并垂直蒸镀所述基板；所述第一真空腔室包括：第一进口，所述搬运装置水平搬运所述基板至所述第一进口；翻转装置，用以将所述基板由水平状态翻转为竖直状态；蒸发源，垂直设于所述第一真空腔室的中间，翻转后的基板与所述蒸发源平行设置且设于所述蒸发源的两侧；以及第一出口，将蒸镀好的基板运送出所述第一出口；其中，所述蒸发源的两侧具有喷射出口，所述喷射出口的中心与所述基板中心位置一致，用以对位于所述蒸发源两侧的基板同时进行蒸镀。
进一步地，所述搬运装置包括：导轨；载物台，滑动连接所述导轨。
进一步地，所述的蒸镀系统还包括对位系统，用以将待蒸镀的所述基板与第一掩膜板进行对位，然后放置在所述载物台上并与所述载物台贴合。
进一步地，所述基板与所述搬运装置在所述第一真空腔室为竖直状态；所述基板与所述搬运装置在未进入所述第一真空腔室为水平状态。
进一步地，所述的蒸镀系统还包括：交换装置，用以接收从所述第一出口蒸镀好的基板，并将所述基板的第一掩膜板更换为第二掩膜板，进行对位并传送至第二真空腔室并再次蒸镀；所述第二真空腔室包括：第二进口，用以接收所述更换为第二掩膜板的所述基板；翻转装置，用以将所述多个基板由水平状态翻转为竖直状态；蒸发源，垂直设于所述第二真空腔室的中间，翻转后的基板与所述蒸发源平行设置且设于所述蒸发源的两侧；以及第二出口，用以将蒸镀好的基板运送出所述第二出口。
进一步地，所述蒸发源包括：喷嘴，设于所述喷射出口处；主体结构，所述主体结构内设有蒸镀材料、加热系统以及水冷系统；导流装置，设于所述主体结构上，用以将加热后的蒸镀材料输送所述喷嘴。
进一步地，所述导流装置垂直或平行于所述主体结构。
进一步地，所述第一真空腔室内包括多个子真空腔室；所述多个子真空腔室通过铺设导轨相互连通；所述蒸发源滑动连接至所述导轨上，用以在所述子真空腔室进行蒸镀。
进一步地，所述水冷系统包括一进水口以及一出水口；所述进水口以及所述出水口的水流速度相同，用以将所述水冷系统保持在一个动态平衡的状态。
本发明还提供一种蒸镀方法，包括：提供所述的蒸镀系统；将待蒸镀的基板与所述第一掩膜板进行对位并与所述载物台一起贴合在一起；将所述基板传送至所述第一真空腔室的多个子真空腔室中，所述基板平行设置于所述蒸发源的两侧；在多个子真空腔室移动所述蒸发源，对所述基板进行蒸镀。
 有益效果
本发明的有益效果是：本发明提供一种蒸镀系统及蒸镀方法，通过在真空腔室中，将蒸镀源垂直设置，将多个基板设置在深蒸镀源的两侧，进而可以对两侧的基板进行蒸镀，可以提高生产节拍，降低生产成本，提高产品质量。并且本发明将真空腔室设置成多个子真空腔室，可以进一步的对多块基板进行蒸镀，且通过使用一个蒸镀源进行不同子真空腔室的蒸镀，减小了成本。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明提供的蒸镀系统的平面示意图。
图2为本发明提供的基板、掩膜板以及载物台贴合的结构示意图。
图3为本发明提供的第一真空腔室的透视图。
图4为本发明提供的蒸发源的结构示意图。
图5为本发明提供的喷嘴的平面图。
图6为本发明提供的蒸发源双侧蒸镀的结构示意图。
图7为本发明提供的垂直结构的第一真空腔室的透视图。
图8为本发明提供的基板与搬运装置垂直状态下的结构示意图。
图9为本发明提供的第二真空腔室的平面示意图。
蒸镀系统100；基板10；掩膜板11；
搬运装置101；第一真空腔室102；导轨1011；
载物台1012；蒸发源1022；喷嘴1024；
主体结构1022-1；导流装置1022-2；
子真空腔室1021；加热系统1022-3；水冷系统1022-4；
进水口1022-5；出水口1022-6；喷射出口1022-7；
导轨1023；第二真空腔室103。
 本发明的实施方式
以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。
本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。
如图1所示，本发明提供一种蒸镀系统100，包括：搬运装置101、第一真空腔室102、对位系统。
如图2所示，所述对位系统用以将待蒸镀的基板10与第一掩膜板11进行对位，然后放置在所述载物台1012上并与所述载物台1012贴合。
所述搬运装置101用以承载并搬运待蒸镀的基板10。所述搬运装置101包括：导轨1011以及载物台1012。
所述载物台1012滑动连接所述导轨1011。在图1中，由于基板10设置在载物台1012的上方，因此俯视图并未显示载物台1012。
继续参照图1所示，在一实施例中，所述第一真空腔室102包括多个子真空腔室1021。
所述多个子真空腔室1021通过铺设导轨1023（参照图3标记1023）相互连通；所述蒸发源1022滑动连接至所述导轨1023上，用以在多个子真空腔室1021进行蒸镀。
每个子真空腔室1021的两侧皆垂直设置多个待蒸镀基板10，所述第一真空腔室102的蒸发源1022在多个子真空中进行移动，分别对每个子真空腔室1021两侧的基板10进行蒸镀，可以更快的对基板10进行蒸镀，提高生产节拍，降低生产成本，提高产品质量。
如图3所示，所述第一真空腔室102用以接受所述基板10并垂直蒸镀所述多个基板10。所述第一真空腔室102包括：第一进口、翻转装置、蒸发源1022以及第一出口。
所述搬运装置101水平搬运多个基板10至所述第一进口。
所述翻转装置用以将所述多个基板10由水平状态翻转为竖直状态。
所述蒸发源1022垂直设于所述第一真空腔室102的中间，翻转后的基板10与所述蒸发源1022平行设置且设于所述蒸发源1022的两侧。
所述蒸发源1022的两侧具有喷射出口1022-7，用以对两侧的基板10同时进行蒸镀，这样可以增加蒸镀效率。所述喷射出口的中心与所述基板10的中心位置一致。最后将蒸镀好的基板10运送出所述第一出口。
同时参照图4所示，所述蒸发源1022包括：喷嘴1024、主体结构1022-1以及导流装置1022-2。
同时参照图5以及图6所示，所述喷嘴1024设于所述喷射出口1022-7处。所述喷嘴1024的开口角度可调节，用于调节蒸镀角。
图5位部分的喷嘴1024俯视图，喷嘴1024对准所述基板10的蒸镀面，图5只是展示了单侧的蒸镀。图6为本发明的发明点的双侧蒸镀示意图，喷嘴1024对着两侧的基板10进行蒸镀，这可以提高蒸镀效率。
继续参照图4所示，所述主体结构1022-1内设有蒸镀材料、加热系统1022-3以及水冷系统1022-4。
所述导流装置1022-2设于所述主体结构1022-1上，用以将加热后的蒸镀材料输送喷嘴1024。
所述导流装置1022-2垂直或平行于所述主体结构1022-1。
若所述导流装置1022-2平行所述主体结构1022-1，则所述蒸发源1022为线源。此时的结构若可以覆盖整个基板10，则可以固定所述蒸发源1022；若尺寸不够，则在蒸镀的时候需要一边移动一边蒸镀，这样可以蒸镀整个基板10。
如图7所示，若所述导流装置1022-2垂直所述主体结构1022-1，则所述蒸发源1022为线源，该蒸发源1022结构的设计尺寸小，材料利用率更高，成本更低。
在其他实施例中，所述蒸发源1022还可以为线源。
所述加热系统1022-3包括加热电阻，用以加热产生热量。
所述水冷系统1022-4包括一进水口1022-5以及一出水口1022-6；所述进水口1022-5以及所述出水口1022-6的水流速度相同，用以将所述水冷系统1022-4保持在一个动态平衡的状态。
所述基板10与所述搬运装置101在未进入所述第一真空腔室102为水平状态。通过所述翻转装置翻转后，如图8所示，所述基板10与所述搬运装置101在所述第一真空腔室102为竖直状态。
如图9所示，在一实施例中，所述蒸镀系统100还包括交换装置以及第二真空腔室103 。
所述交换装置用以接收从所述第一出口蒸镀好的基板10，并将第一掩膜板11更换为第二掩膜板。通过所述对位系统再次进行对位贴合，并传送至第二真空腔室103并再次蒸镀。在第二真空腔室蒸镀的膜层与在第一真空腔室102蒸镀的膜层不同。
因此，在一条生产线中，所述第二真空腔室103设置在所述第一真空腔室102的下游。
所述第二真空腔室103包括：第二进口、翻转装置、蒸发源1022以及第二出口。
所述第二进口用以接收所述更换为第二掩膜板的基板10。
所述翻转装置用以将所述多个基板10由水平状态翻转为竖直状态。
所述蒸发源1032垂直设于所述第二真空腔室的中间，翻转后的基板10与所述蒸发源1032平行设置且设于所述蒸发源1032的两侧。
所述蒸发源1032的具体结构参照所述第一真空腔室102的蒸发源1022结构。
所述第二出口用以将蒸镀好的基板10运送出所述第二出口。所述第一真空腔室103包括多个子真空腔室1031。所述多个子真空腔室1031通过铺设导轨相互连通；所述蒸发源1032滑动连接至所述导轨上，用以在多个子真空腔室1031进行蒸镀。
本发明提供一种蒸镀系统100，通过在真空腔室中，将蒸镀源垂直设置，将多个基板10设置在深蒸镀源的两侧，进而可以对两侧的基板10进行蒸镀，可以提高生产节拍，降低生产成本，提高产品质量。并且本发明将真空腔室设置成多个子真空腔室，可以进一步的对多块基板10进行蒸镀，且通过使用一个蒸镀源进行不同子真空腔室的蒸镀，减小了成本。
本发明还提供一种蒸镀方法，包括如下步骤。
提供如所述的蒸镀系统100。
将待蒸镀的基板10与所述第一掩膜板11进行对位并与所述载物台1012一起贴合在一起。
将所述基板10传送至所述第一真空腔室102的多个子真空腔室中，所述基板10平行设置于所述蒸发源1022的两侧。
在多个子真空腔室移动所述蒸发源1022，对所述基板10进行蒸镀。
蒸镀结束后，移出第一出口后，对基板10进行翻转复位，使基板10水平放置。
将第一掩膜板更换第二掩膜板，后将第二掩膜板与基板10对位并与载物台1012贴合。
将基板10传送至所述第二真空腔室中，分别垂直设置在所述第二真空腔室的两侧，移动蒸发源1022，再次对基板10进行蒸镀。
本发明的技术范围不仅仅局限于所述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对所述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (18)

  1. 一种蒸镀系统，其中，包括：
    搬运装置，用以承载并搬运待蒸镀的多个基板；
    第一真空腔室，用以接受所述基板并垂直蒸镀所述基板；
    所述第一真空腔室包括：
    第一进口，所述搬运装置水平搬运所述基板至所述第一进口；
    翻转装置，用以将所述基板由水平状态翻转为竖直状态；
    蒸发源，垂直设于所述第一真空腔室的中间，翻转后的基板与所述蒸发源平行设置且设于所述蒸发源的两侧；以及
    第一出口，将蒸镀好的基板运送出所述第一出口；
    其中，所述蒸发源的两侧具有喷射出口，所述喷射出口的中心与所述基板的中心位置一致，用以对位于所述蒸发源两侧的基板同时进行蒸镀。
  2. 如权利要求1所述的蒸镀系统，其中，
    所述搬运装置包括：
    导轨；
    载物台，滑动连接所述导轨。
  3. 如权利要求2所述的蒸镀系统，其中，还包括
    对位系统，用以将待蒸镀的所述基板与第一掩膜板进行对位，然后放置在所述载物台上并与所述载物台贴合。
  4. 如权利要求2所述的蒸镀系统，其中，
    所述基板与所述搬运装置在所述第一真空腔室为竖直状态；
    所述基板与所述搬运装置在未进入所述第一真空腔室为水平状态。
  5. 如权利要求1所述的蒸镀系统，其中，还包括：
    交换装置，用以接收从所述第一出口蒸镀好的基板，并将所述基板的第一掩膜板更换为第二掩膜板，进行对位并传送至第二真空腔室并再次蒸镀；
    所述第二真空腔室包括：
    第二进口，用以接收更换为第二掩膜板的所述基板；
    翻转装置，用以将所述基板由水平状态翻转为竖直状态；
    蒸发源，垂直设于所述第二真空腔室的中间，翻转后的基板与所述蒸发源平行设置且设于所述蒸发源的两侧；以及
    第二出口，用以将蒸镀好的基板运送出所述第二出口。
  6. 如权利要求1所述的蒸镀系统，其中，
    所述蒸发源包括：
    喷嘴，设于所述喷射出口处；
    主体结构，所述主体结构内设有蒸镀材料、加热系统以及水冷系统；
    导流装置，设于所述主体结构上，用以将加热后的蒸镀材料输送至所述喷嘴。
  7. 如权利要求6所述的蒸镀系统，其中，
    所述导流装置垂直或平行于所述主体结构。
  8. 如权利要求1所述的蒸镀系统，其中，
    所述第一真空腔室内包括多个子真空腔室；
    所述子真空腔室通过铺设导轨相互连通；
    所述蒸发源滑动连接至所述导轨上，用以在所述子真空腔室进行蒸镀。
  9. 如权利要求6所述的蒸镀系统，其中，
    所述水冷系统包括一进水口以及一出水口；
    所述进水口以及所述出水口的水流速度相同，用以将所述水冷系统保持在一个动态平衡的状态。
  10. 一种蒸镀方法，其特征在于，包括：
    提供一蒸镀系统，所述蒸镀系统包括：搬运装置，用以承载并搬运待蒸镀的多个基板；第一真空腔室，用以接受所述基板并垂直蒸镀所述基板；所述第一真空腔室包括：第一进口，所述搬运装置水平搬运所述基板至所述第一进口；翻转装置，用以将所述基板由水平状态翻转为竖直状态；蒸发源，垂直设于所述第一真空腔室的中间，翻转后的基板与所述蒸发源平行设置且设于所述蒸发源的两侧；以及第一出口，将蒸镀好的基板运送出所述第一出口；其中，所述蒸发源的两侧具有喷射出口，所述喷射出口的中心与所述基板的中心位置一致，用以对位于所述蒸发源两侧的基板同时进行蒸镀；
    将待蒸镀的基板与所述第一掩膜板进行对位并与所述载物台一起贴合在一起；
    将所述基板传送至所述第一真空腔室的多个子真空腔室中，所述基板平行设置于所述蒸发源的两侧；
    在多个子真空腔室移动所述蒸发源，对所述基板进行蒸镀。
  11. 如权利要求10所述的蒸镀方法，其中，
    所述搬运装置包括：
    导轨；
    载物台，滑动连接所述导轨。
  12. 如权利要求11所述的蒸镀方法，其中，还包括
    对位系统，用以将待蒸镀的所述基板与第一掩膜板进行对位，然后放置在所述载物台上并与所述载物台贴合。
  13. 如权利要求11所述的蒸镀方法，其中，
    所述基板与所述搬运装置在所述第一真空腔室为竖直状态；
    所述基板与所述搬运装置在未进入所述第一真空腔室为水平状态。
  14. 如权利要求10所述的蒸镀方法，其中，还包括：
    交换装置，用以接收从所述第一出口蒸镀好的基板，并将所述基板的第一掩膜板更换为第二掩膜板，进行对位并传送至第二真空腔室并再次蒸镀；
    所述第二真空腔室包括：
    第二进口，用以接收更换为第二掩膜板的所述基板；
    翻转装置，用以将所述基板由水平状态翻转为竖直状态；
    蒸发源，垂直设于所述第二真空腔室的中间，翻转后的基板与所述蒸发源平行设置且设于所述蒸发源的两侧；以及
    第二出口，用以将蒸镀好的基板运送出所述第二出口。
  15. 如权利要求10所述的蒸镀方法，其中，
    所述蒸发源包括：
    喷嘴，设于所述喷射出口处；
    主体结构，所述主体结构内设有蒸镀材料、加热系统以及水冷系统；
    导流装置，设于所述主体结构上，用以将加热后的蒸镀材料输送至所述喷嘴。
  16. 如权利要求15所述的蒸镀方法，其中，
    所述导流装置垂直或平行于所述主体结构。
  17. 如权利要求10所述的蒸镀方法，其中，
    所述第一真空腔室内包括多个子真空腔室；
    所述子真空腔室通过铺设导轨相互连通；
    所述蒸发源滑动连接至所述导轨上，用以在所述子真空腔室进行蒸镀。
  18. 如权利要求15所述的蒸镀方法，其中，
    所述水冷系统包括一进水口以及一出水口；
    所述进水口以及所述出水口的水流速度相同，用以将所述水冷系统保持在一个动态平衡的状态。
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114438456A (zh) * 2021-12-24 2022-05-06 重庆金美新材料科技有限公司 一种轻质、高导电薄膜的制备装置和制备工艺
CN114875363A (zh) * 2022-03-24 2022-08-09 广州华星光电半导体显示技术有限公司 蒸镀装置及显示面板的制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101667630A (zh) * 2008-09-04 2010-03-10 株式会社日立高新技术 有机el设备制造装置和其制造方法以及成膜装置和成膜方法
CN102369306A (zh) * 2009-03-31 2012-03-07 韩商Snu精密股份有限公司 用于沉积薄膜的装置、方法及系统
CN107002223A (zh) * 2014-12-05 2017-08-01 应用材料公司 材料沉积系统和用于在材料沉积系统中沉积材料的方法
CN206570394U (zh) * 2017-01-23 2017-10-20 南京高光半导体材料有限公司 双排式高效线性蒸发源
CN108570645A (zh) * 2017-11-30 2018-09-25 上海微电子装备（集团）股份有限公司 真空蒸镀装置及其蒸发头、真空蒸镀方法
CN109154063A (zh) * 2017-04-28 2019-01-04 应用材料公司 真空系统和用于在基板上沉积多个材料的方法
CN109154067A (zh) * 2017-04-28 2019-01-04 应用材料公司 在基板上沉积一种或多种材料的真空系统和方法
WO2019096425A1 (en) * 2017-11-20 2019-05-23 Applied Materials, Inc. Substrate support for processing a substrate, vacuum processing apparatus and substrate processing system
JP2019206759A (ja) * 2019-06-25 2019-12-05 堺ディスプレイプロダクト株式会社 成膜装置、蒸着膜の成膜方法および有機ｅｌ表示装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101119853B1 (ko) * 2009-05-07 2012-02-28 에스엔유 프리시젼 주식회사 박막 증착 장치 및 이를 구비하는 박막 증착 시스템
KR101708420B1 (ko) * 2010-09-15 2017-02-21 삼성디스플레이 주식회사 기판 증착 시스템 및 이를 이용한 증착 방법
JP2013206820A (ja) * 2012-03-29 2013-10-07 Samsung Display Co Ltd 有機ｅｌデバイス製造装置及び有機ｅｌデバイス製造方法
WO2015117638A1 (en) * 2014-02-04 2015-08-13 Applied Materials, Inc. Evaporation source for organic material, apparatus having an evaporation source for organic material, system having an evaporation deposition apparatus with an evaporation source for organic materials, and method for operating an evaporation source for organic material
KR20160087953A (ko) * 2015-01-14 2016-07-25 에스엔유 프리시젼 주식회사 유기발광소자 제조용 클러스터 타입 증착장치
US20170250379A1 (en) * 2016-11-28 2017-08-31 Applied Materials, Inc. Evaporation source having multiple source ejection directions

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101667630A (zh) * 2008-09-04 2010-03-10 株式会社日立高新技术 有机el设备制造装置和其制造方法以及成膜装置和成膜方法
CN102369306A (zh) * 2009-03-31 2012-03-07 韩商Snu精密股份有限公司 用于沉积薄膜的装置、方法及系统
CN107002223A (zh) * 2014-12-05 2017-08-01 应用材料公司 材料沉积系统和用于在材料沉积系统中沉积材料的方法
CN206570394U (zh) * 2017-01-23 2017-10-20 南京高光半导体材料有限公司 双排式高效线性蒸发源
CN109154063A (zh) * 2017-04-28 2019-01-04 应用材料公司 真空系统和用于在基板上沉积多个材料的方法
CN109154067A (zh) * 2017-04-28 2019-01-04 应用材料公司 在基板上沉积一种或多种材料的真空系统和方法
WO2019096425A1 (en) * 2017-11-20 2019-05-23 Applied Materials, Inc. Substrate support for processing a substrate, vacuum processing apparatus and substrate processing system
CN108570645A (zh) * 2017-11-30 2018-09-25 上海微电子装备（集团）股份有限公司 真空蒸镀装置及其蒸发头、真空蒸镀方法
JP2019206759A (ja) * 2019-06-25 2019-12-05 堺ディスプレイプロダクト株式会社 成膜装置、蒸着膜の成膜方法および有機ｅｌ表示装置の製造方法

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