WO2021233002A1 - 显示基板及其制作方法、显示装置 - Google Patents

显示基板及其制作方法、显示装置 Download PDF

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Publication number
WO2021233002A1
WO2021233002A1 PCT/CN2021/086509 CN2021086509W WO2021233002A1 WO 2021233002 A1 WO2021233002 A1 WO 2021233002A1 CN 2021086509 W CN2021086509 W CN 2021086509W WO 2021233002 A1 WO2021233002 A1 WO 2021233002A1
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Prior art keywords
layer
base substrate
functional layer
functional
light
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PCT/CN2021/086509
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English (en)
French (fr)
Inventor
刘文祺
孙中元
薛金祥
闫华杰
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京东方科技集团股份有限公司
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Publication of WO2021233002A1 publication Critical patent/WO2021233002A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present disclosure relates to, but is not limited to, the field of display technology, and particularly relates to a display substrate, a manufacturing method thereof, and a display device.
  • Micro-OLED Micro Organic Light-Emitting Diode
  • TCON timing control
  • OCP over-current protection
  • Silicon-based OLEDs are fabricated using mature Complementary Metal Oxide Semiconductor (Complementary Metal Oxide Semiconductor, CMOS) integrated circuit technology, and have the advantages of small size, high resolution (Pixels Per Inch, PPI), and high refresh rate, and are widely used in Virtual Reality (VR) or Augmented Reality (AR) is used in near-eye display field.
  • CMOS Complementary Metal Oxide Semiconductor
  • the present disclosure provides a display substrate, including: a base substrate and a pixel definition layer, a light-emitting structure layer, a functional layer, and a color film layer provided on the base substrate;
  • the color film layer includes: a plurality of filters; the orthographic projections of adjacent filters on the base substrate partially overlap, and the orthographic projection of the pixel definition layer on the base substrate covers the adjacent filters.
  • the functional layer is located between the light-emitting structure layer and the color filter layer, and the orthographic projection on the base substrate at least partially overlaps the overlapping portion of the adjacent filter.
  • the display substrate further includes: an encapsulation layer located between the light-emitting structure layer and the color filter layer;
  • the encapsulation layer includes: a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a third organic encapsulation layer;
  • the first inorganic encapsulation layer is located on a side of the second inorganic encapsulation layer close to the base substrate;
  • the third organic encapsulation layer is located on a side of the second inorganic encapsulation layer away from the base substrate;
  • the manufacturing material of the first inorganic encapsulation layer includes silicon nitride; the manufacturing material of the second inorganic encapsulation layer includes silicon oxide; the manufacturing material of the third organic encapsulation layer includes: parylene; The thickness of the third organic encapsulation layer is 4500 nm to 5500 nm.
  • the functional layer is a single-layer structure and a planar structure
  • the functional layer is located between the first inorganic encapsulation layer and the second inorganic encapsulation layer, or between the second inorganic encapsulation layer and the third organic encapsulation layer;
  • the functional layer is a transparent film layer
  • the material of the functional layer includes: polyvinyl chloride or titanium dioxide nanowires doped with plasticizers, stabilizers and ultraviolet light absorbers.
  • the functional layer has a multilayer structure, and the functional layer includes: a first functional layer and a second functional layer;
  • the first functional layer is located between the first inorganic packaging layer and the second inorganic packaging layer, and the second functional layer is located between the second inorganic packaging layer and the third organic packaging layer;
  • Both the first functional layer and the second functional layer are transparent film layers
  • the material of the first functional layer includes: polyvinyl chloride or titanium dioxide nanowires doped with plasticizers, stabilizers and ultraviolet light absorbers;
  • the second functional layer is made of materials including: polyvinyl chloride or titanium dioxide nanowires doped with plasticizers, stabilizers and ultraviolet light absorbers.
  • the first functional layer and the second functional layer are in a grid structure
  • the first functional layer includes: a first wiring and a plurality of first opening areas surrounded by the first wiring;
  • the second functional layer includes: a second wiring and a plurality of first opening regions surrounded by the second wiring Multiple second opening areas surrounded by lines;
  • the orthographic projection of the pixel definition layer on the base substrate covers the orthographic projection of the first wiring or the second wiring on the base substrate;
  • the orthographic projection of the first trace or the second trace on the base substrate at least partially overlaps with the overlapping portion of the adjacent filter.
  • the first functional layer has a grid structure
  • the second functional layer has a planar structure
  • the first functional layer includes: a first wiring and a plurality of first opening regions surrounded by the first wiring; the orthographic projection of the pixel definition layer on the base substrate covers the first wiring The orthographic projection of the line on the base substrate; the orthographic projection of the first trace on the base substrate at least partially overlaps the overlapping part of the adjacent filter;
  • the first functional layer has a planar structure
  • the second functional layer has a grid structure
  • the second functional layer includes: a second wiring and a second opening area surrounded by the second wiring; the orthographic projection of the pixel definition layer on the base substrate covers the second wiring An orthographic projection on the base substrate; the orthographic projection of the second trace on the base substrate at least partially overlaps with the overlapping portion of the adjacent filter;
  • the first functional layer and the second functional layer have a planar structure.
  • the cross-sectional shape of the first opening area includes: a polygon, a circle, or an ellipse
  • the cross-sectional shape of the second opening area includes: a polygon, a circle, or an ellipse.
  • the first inorganic encapsulation layer and the second inorganic encapsulation layer are formed by a deposition process; the deposition density of the first inorganic encapsulation layer is less than the deposition density of the second inorganic encapsulation layer.
  • the display substrate further includes: a driving structure layer, a flat layer, a bonding layer, and a cover plate;
  • the driving structure layer is located on a side of the light emitting structure layer close to the base substrate, and the driving structure layer is connected to the light emitting structure layer;
  • the flat layer is located on the side of the color filter layer away from the base substrate; the material of the flat layer includes: parylene;
  • the bonding layer is located on a side of the flat layer away from the base substrate, and a material of the bonding layer includes silicon dioxide;
  • the cover plate is located on a side of the bonding layer away from the base substrate.
  • the present disclosure also provides a display device, including: the above-mentioned display substrate.
  • the present disclosure also provides a manufacturing method of a display substrate, which is configured to manufacture the above-mentioned display substrate, and the method includes:
  • a functional layer and a color filter layer are sequentially formed on the light-emitting structure layer;
  • the color filter layer includes: a plurality of filters; the orthographic projections of adjacent filters on the base substrate partially overlap, and the pixels
  • the orthographic projection of the definition layer on the base substrate covers the orthographic projection of the overlapping part of the adjacent filters on the base substrate;
  • the functional layer is located between the light-emitting structure layer and the color filter layer, and the orthographic projection on the base substrate at least partially overlaps the overlapping portion of the adjacent filter.
  • the functional layer has a single-layer structure, and sequentially forming a functional layer and a color filter layer on the light-emitting structure layer includes:
  • a color film layer is formed on the third organic encapsulation layer.
  • the functional layer has a multilayer structure, and the functional layer includes: a first functional layer and a second functional layer;
  • the step of sequentially forming a functional layer and a color film layer on the light-emitting structure layer includes:
  • a color film layer is formed on the third organic encapsulation layer.
  • the light-emitting structure layer includes: a first electrode, an organic light-emitting layer, and a second electrode, and forming a pixel definition layer and a light-emitting structure layer on the base substrate includes:
  • the method further includes:
  • a flat layer, a bonding layer and a cover plate are sequentially formed on the color film layer.
  • FIG. 1 is a schematic diagram of a structure of a display substrate provided by an embodiment of the disclosure
  • FIG. 2 is a schematic diagram of another structure of a display substrate provided by an embodiment of the disclosure.
  • FIG. 3 is a schematic diagram of another structure of a display substrate provided by an embodiment of the disclosure.
  • FIG. 4 is a schematic diagram of the structure of an organic light-emitting layer provided by an exemplary embodiment
  • Fig. 5 is a schematic diagram of a circuit principle provided by an exemplary embodiment
  • FIG. 6 is a schematic diagram of circuit implementation of a voltage control circuit and a pixel driving circuit provided by an exemplary embodiment
  • Fig. 7A is a top view of the first functional layer in an exemplary embodiment
  • Fig. 7B is a top view of the second functional layer in an exemplary embodiment
  • FIG. 8 is a flowchart of a manufacturing method of a display substrate provided by an embodiment of the disclosure.
  • 9 to 17 are schematic diagrams of a manufacturing method of a display substrate provided by an exemplary embodiment.
  • a transistor refers to an element including at least three terminals of a gate electrode, a drain electrode, and a source electrode.
  • the transistor has a channel region between the drain electrode (drain electrode terminal, drain region, or drain electrode) and the source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode .
  • the channel region refers to the region through which current mainly flows.
  • the first electrode may be a drain electrode and the second electrode may be a source electrode, or the first electrode may be a source electrode and the second electrode may be a drain electrode.
  • the functions of the "source electrode” and the “drain electrode” may be interchanged. Therefore, in this specification, “source electrode” and “drain electrode” can be interchanged.
  • connection includes the case where constituent elements are connected together by elements having a certain electrical function.
  • An element having a certain electrical function is not particularly limited as long as it can transmit and receive electrical signals between connected constituent elements.
  • elements having a certain electrical function include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having various functions.
  • film and “layer” can be interchanged.
  • the “conductive layer” can be replaced by the “conductive film.”
  • the “insulating film” can sometimes be replaced with an “insulating layer.”
  • an encapsulation layer and a color film layer are also provided on the organic light-emitting layer.
  • the encapsulation layer because the thickness of part of the organic film layer in the encapsulation layer is thin, the stress of the inorganic film layer in the encapsulation layer cannot be relieved, so that the inorganic film layer in the encapsulation layer has a large stress, which is very easy to cause breakage.
  • the organic light-emitting layer cannot be protected.
  • the color film layer when the color film layer is made, when the color film layer is cured by ultraviolet rays, the organic light-emitting layer will be damaged by the ultraviolet rays. Therefore, the organic light-emitting layer will be adversely affected in the subsequent manufacturing process of the organic light-emitting layer, which reduces the display effect of the display substrate.
  • FIG. 1 is a schematic diagram of a structure of a display substrate provided by an embodiment of the disclosure
  • FIG. 2 is a schematic diagram of another structure of a display substrate provided by an embodiment of the disclosure
  • FIG. 3 is a schematic diagram of another structure of a display substrate provided by an embodiment of the disclosure.
  • the display substrate provided by the embodiment of the present disclosure includes: a base substrate 10 and a light-emitting structure layer 20, a pixel definition layer 24, a functional layer 50 and a color filter layer 30 disposed on the base substrate 10.
  • the color film layer 30 includes a plurality of filters 31; the orthographic projections of adjacent filters on the base substrate 10 partially overlap, and the orthographic projection of the pixel definition layer 24 on the base substrate covers the overlap of adjacent filters. Part of the orthographic projection on the base substrate.
  • the functional layer 50 is located between the light-emitting structure layer 20 and the color filter layer 30, and the orthographic projection on the base substrate 10 at least partially overlaps the overlapping portion of the adjacent filter.
  • the base substrate 10 may be a silicon-based substrate or a glass substrate.
  • the light emitting structure layer 20 may include: a first electrode 21, an organic light emitting layer 22 and a second electrode 23.
  • the first electrode 21 is located on the side of the organic light emitting layer 22 close to the base substrate 10
  • the second electrode 23 is located on the side of the organic light emitting layer 22 away from the base substrate 10.
  • the display substrate may be a top emission structure.
  • the first electrode 21 may be a reflective electrode.
  • the first electrode 21 may be a multilayer composite structure.
  • the first electrode 21 may include: a first conductive layer, a second conductive layer, and a third conductive layer that are stacked.
  • the first conductive layer and the third conductive layer may be made of titanium.
  • the material of the second conductive layer may be aluminum.
  • FIG. 4 is a schematic diagram of the structure of an organic light-emitting layer provided by an exemplary embodiment.
  • the organic light-emitting layer provided by an exemplary embodiment includes a first light-emitting sublayer 331, a first charge generation layer 332, and a second light-emitting sublayer sequentially stacked between a first electrode and a second electrode.
  • the layer 333, the second charge generation layer 334, and the third light-emitting sub-layer 335 is a schematic diagram of the structure of an organic light-emitting layer provided by an exemplary embodiment.
  • the organic light-emitting layer provided by an exemplary embodiment includes a first light-emitting sublayer 331, a first charge generation layer 332, and a second light-emitting sublayer sequentially stacked between a first electrode and a second electrode.
  • the layer 333, the second charge generation layer 334, and the third light-emitting sub-layer 335 is a schematic diagram of the structure of an organic light-emitting layer provided by an
  • the first light emitting sublayer 331 is configured to emit light of the first color, and includes a first hole transport layer (HTL) 3311, a first light emitting material layer (EML) 3312, and a first electron transport layer (ETL) 3313 that are sequentially stacked.
  • the second light-emitting sublayer 333 is configured to emit light of the second color, and includes a second hole transport layer 3331, a second light-emitting material layer 3332, and a second electron transport layer 3333 that are sequentially stacked.
  • the third light-emitting sublayer 335 is configured to emit light of the third color, and includes a third hole transport layer 3351, a third light-emitting material layer 3352, and a third electron transport layer 3353 that are sequentially stacked.
  • the first charge generation layer 332 is arranged between the first light-emitting sub-layer 331 and the second light-emitting sub-layer 333, and is arranged to connect the two light-emitting sub-layers in series to realize the transfer of carriers.
  • the second charge generation layer 334 is arranged between the second light-emitting sub-layer 333 and the third light-emitting sub-layer 335, and is arranged to connect the two light-emitting sub-layers in series to realize the transfer of carriers.
  • the organic light-emitting layer includes a first light-emitting material layer that emits light of a first color, a second light-emitting material layer that emits light of a second color, and a third light-emitting material layer that emits light of a third color
  • the light finally emitted by the organic light-emitting layer is Mixed light.
  • the first light-emitting material layer is a red light material layer that emits red light
  • the second light-emitting material layer is a green light material layer that emits green light
  • the third light-emitting material layer is a blue material layer that emits blue light.
  • the layer finally emits white light.
  • the structure of the organic light-emitting layer can be designed according to actual requirements.
  • a hole injection layer and an electron injection layer may be provided in each light-emitting sublayer.
  • the first electron transport layer 3313, the first charge generation layer 332, and the second hole transport layer 3331 can be eliminated, that is, the second light-emitting material layer 3332 can be directly disposed on the first light-emitting material layer 3312 .
  • the organic light-emitting layer may be an organic light-emitting layer that emits light of the first color and an organic light-emitting layer that emits complementary light of the first color light, and the two organic light-emitting layers are sequentially stacked relative to the base substrate, Thus, white light is emitted as a whole.
  • the orthographic projection of the first electrode 21 on the base substrate 10 covers the orthographic projection of the organic light-emitting layer 22 on the base substrate 10, that is, the size of the first electrode 21 is larger than that of the organic light-emitting layer 22.
  • the size can improve the display brightness of the display substrate.
  • the second electrode 23 may be a planar electrode.
  • the second electrode 23 is a transmissive electrode, and is configured to transmit light emitted by the organic light-emitting layer 22 and reflected by the first electrode 21.
  • the material of the second electrode 23 may be indium tin oxide or zinc tin oxide, or may be other transparent conductive materials.
  • the color film layer 30 may use white light combined with a color film to achieve full-color display.
  • the use of white light combined with color film can achieve a high resolution greater than 2000, which can meet the needs of VR/AR.
  • the plurality of filters 31 are arranged in an array.
  • the shape of the filter 31 may be hexagonal, elongated, or approximately elliptical.
  • the area of the filter 31 is less than 20 ⁇ m 2 .
  • the preparation temperature of the filter 31 is less than 90 degrees.
  • the color filter layer 30 at least includes a first color filter, a second color filter, and a third color filter.
  • the color film layer 30 may also include: a white filter or a filter of other colors.
  • the color filter layer located in one pixel area includes the first color filter.
  • the one-color filter, the second-color filter and the third-color filter are arranged along the arrangement of a plurality of sub-pixels in one pixel area.
  • the first color filter, the second color filter, and the third color filter are arranged on the same surface.
  • the second color filter is arranged on the first side of the first color filter
  • the third color filter is arranged on the second side opposite to the first side of the first color filter. side.
  • At least one of the second color filter and the third color filter covers a part of the first color filter; at least part of the first color filter and the second color filter and None of the third color filters overlap; the second color filter and the third color filter do not overlap at all.
  • the patterning process includes: photoresist coating, exposure, development, etching, and stripping processes.
  • the first patterning process is used to form the first color filter.
  • the second color filter located on the first side of the first color filter is formed by the second patterning process, and the second color filter is partially covered on the first color filter, which can reduce the second color and color film layer The contact area between the following film layers.
  • a third patterning process is used to form the third color filter on the second side of the first color filter.
  • the third color filter partially covers the second color filter, which can reduce the third color and color film The contact area between the film layers below the layer.
  • the first color filter may be a green (G) color filter
  • the second color filter may be a red (R) color filter
  • the third color filter may It is a blue (B) color filter, or the first color filter can be a blue filter, and the second color filter can be a green filter.
  • the third color filter may be a red filter.
  • the adhesion of the green filter is greater than the adhesion of the red filter and the adhesion of the blue filter.
  • the first color filter can be a green (G) color filter
  • the second color filter can be a red (R) color filter
  • the third color filter can be a blue (B) color filter.
  • G green
  • R red
  • B blue
  • the green filter with high adhesion is formed first, and the red filter with low adhesion is formed later, and the red filter with low adhesion is partially covered on the green filter with high adhesion.
  • the contact area between the red filter with low adhesion and the film layer below the color filter layer can be reduced.
  • the green filter and the red filter have similar properties.
  • the adhesion between the green filter and the red filter is greater than the adhesion between the red filter and the film layer below the color film layer, which is similar to the red filter.
  • the red filter partially covering the green filter can reduce the possibility of the green filter and the red filter being peeled off from the color film layer as a whole .
  • the red filter has low adhesion and good fluidity, in the process of forming the red filter, it can improve the overall film of the green filter and the red filter at the position where the two overlap. Thick uniformity. After that, a blue filter with low adhesion is formed, and the blue filter with low adhesion is partially covered on the green filter with high adhesion, which can reduce the blue filter with low adhesion.
  • the green filter and the blue filter have similar properties.
  • the adhesion between the green filter and the blue filter is greater than the adhesion between the blue filter and the film layer below the color film layer, so Compared with the case where the blue filter does not cover the green filter at all, the partial covering of the blue filter with the green filter can reduce the overall movement of the green filter and the blue filter from below the color film layer. Possibility of layer peeling. In addition, due to the low adhesion of the blue filter and good fluidity, in the process of forming the blue filter, the overall overlap between the green filter and the blue filter can be improved. Uniformity of film thickness at location.
  • filters of the same color located in different pixel regions may be formed in the same manufacturing process.
  • the pixel defining layer 24 may be made of polyimide, acrylic or polyethylene terephthalate.
  • the display substrate may further include: a driving structure layer disposed between the base substrate 10 and the light emitting structure layer 20.
  • the driving structure layer is connected to the first electrode 21.
  • the driving structure layer includes: a transistor 11 arranged in a base substrate 10, a first insulating layer 12, a first conductive pillar 13, a reflective electrode 14, a second insulating layer 15 and a second conductive layer arranged on the base substrate 10 in sequence.
  • the active layer of the transistor 11 may be disposed inside the base substrate 10.
  • the transistor 11 may be a metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor, MOS for short).
  • MOS Metal Oxide Semiconductor
  • the transistor may include an active layer, a gate electrode, a source electrode, a drain electrode, and a gate connection electrode.
  • the source electrode and the drain electrode are respectively connected to the active layer
  • the gate connection electrode is connected to the gate electrode through the second conductive pillar.
  • the transistor may be a bottom gate structure or may be a top gate structure.
  • the active layer may be made of metal oxide.
  • the first insulating layer 12 and the second insulating layer 15 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON).
  • the structure of the first insulating layer 12 and the second insulating layer 15 may be a single-layer structure, or may be a multilayer composite structure.
  • the first conductive pillar 13 and the second conductive pillar 16 may be made of tungsten.
  • the reflective electrode 14 may be made of silver or aluminum.
  • the structure of the reflective electrode 14 may be a single-layer structure, or may be a multilayer composite structure.
  • the display substrate provided by the embodiments of the present disclosure includes: a base substrate and a pixel definition layer, a light-emitting structure layer, a functional layer, and a color filter layer provided on the base substrate;
  • the color filter layer includes: a plurality of filters; adjacent filters
  • the orthographic projection of the light sheet on the base substrate overlaps, and the orthographic projection of the pixel definition layer on the base substrate covers the orthographic projection of the overlapped portion of the adjacent filters on the base substrate;
  • the functional layer is located in the light-emitting structure layer and the color Between the film layers, the orthographic projection on the base substrate at least partially overlaps the overlapping part of the adjacent filter.
  • the present disclosure can reduce the influence of subsequent manufacturing processes on the organic light-emitting layer by arranging the functional layer in the light-emitting structure layer and the color filter layer, and can improve the display effect of the display substrate.
  • the display substrate may include: a display area 100, a peripheral area 200 surrounding the display area 100, and a binding area 300 disposed on a side of the peripheral area 200 away from the display area 100 .
  • a plurality of regularly arranged sub-pixels are provided in the display area 100.
  • Each sub-pixel includes a light-emitting element and a pixel driving circuit configured to drive the light-emitting element to emit light.
  • the peripheral area 200 is provided with a control circuit that provides a control signal to the pixel driving circuit.
  • the bonding area 300 is provided with a bonding pad component that is bonded and connected to an external flexible printed circuit (Flexible Printed Circuit, FPC for short).
  • FIGS. 1 to 3 illustrate the three sub-pixels 100A, 100B, and 100C in the display area as an example.
  • the transistor may include a switching transistor and a driving transistor.
  • a plurality of transistors 11 on the base substrate 10 may constitute a pixel driving circuit.
  • Fig. 5 is a schematic diagram of a circuit principle provided by an exemplary embodiment. As shown in FIG. 5, multiple sub-pixels in the display area are regularly arranged to form multiple display rows and multiple display columns. Each sub-pixel includes a pixel driving circuit 101 and a light emitting device 102 connected to the pixel driving circuit 101.
  • the pixel driving circuit 101 includes at least a driving transistor.
  • the control circuit includes at least a plurality of voltage control circuits 110, and each voltage control circuit 110 is connected to a plurality of pixel driving circuits 101.
  • a voltage control circuit 110 is connected to the pixel drive circuit 101 in a display row, the first pole of the drive transistor in the display row pixel drive circuit 101 is commonly connected to the voltage control circuit 110, and the second pole of each drive transistor is connected to The anode of the light-emitting device 102 of the sub-pixel is connected, and the cathode of the light-emitting device 102 is connected to the input terminal of the second power signal VSS.
  • the voltage control circuit 110 is respectively connected to the input terminal of the first power signal VDD, the input terminal of the initialization signal Vinit, the input terminal of the reset control signal RE, and the input terminal of the light emission control signal EM.
  • the voltage control circuit 110 is configured to output the initialization signal Vinit to the first pole of the driving transistor in response to the reset control signal RE, and control the corresponding light emitting device 102 to reset.
  • the voltage control circuit 110 is further configured to output the first power signal VDD to the first pole of the driving transistor in response to the light emission control signal EM to drive the light emitting device 102 to emit light.
  • the voltage control circuit 110 outputs the initialization signal Vinit to the first pole of the driving transistor under the control of the reset control signal RE, and controls the corresponding light-emitting device 102 to reset, which can prevent the voltage applied to the light-emitting device 102 from being lowered when the previous frame emits light.
  • the effect of one frame of light can improve the afterimage phenomenon.
  • one voltage control circuit 110 may be connected to the pixel driving circuits 101 in two adjacent sub-pixels in the same display row, or may be connected to the pixel driving circuits 101 in three or more sub-pixels in the same display row. Pixel driving circuit 101.
  • FIG. 6 is a schematic diagram of circuit implementation of a voltage control circuit and a pixel driving circuit provided by an exemplary embodiment.
  • the light emitting device may include an OLED.
  • the anode of the OLED is connected to the second electrode D of the driving transistor M0, and the cathode of the OLED is connected to the input terminal of the second power signal VSS.
  • the voltage of the second power signal VSS may be a negative voltage or a ground voltage V GND (generally 0V).
  • the voltage of the initialization signal Vinit may be the ground voltage V GND .
  • the OLED may be Micro-OLED or Mini-OLED to facilitate high PPI display.
  • the voltage control circuit 110 is connected to two pixel driving circuits 101 in a display row.
  • the pixel driving circuit 101 includes a driving transistor M0, a third transistor M3, a fourth transistor M4, and a storage capacitor Cst, and the voltage control circuit 110 includes a first transistor M1 and a second transistor M2.
  • the driving transistor M0, the first transistor M1, the second transistor M2, the third transistor M3, and the fourth transistor M4 are all transistors prepared in a base substrate.
  • the control electrode of the first transistor M1 is connected to the input terminal of the reset control signal RE and is configured to receive the reset control signal RE, and the first electrode of the first transistor M1 is connected to the input terminal of the initialization signal Vinit and is configured to receive the initialization signal Vinit ,
  • the second pole of the first transistor M1 is respectively connected to the first pole S of the corresponding driving transistor M0 and the second pole of the second transistor M2.
  • the control electrode of the second transistor M2 is connected to the input end of the light emission control signal EM and is configured to receive the light emission control signal EM.
  • the first electrode of the second transistor M2 is connected to the input end of the first power signal VDD and is configured to receive A power signal VDD, the second pole of the second transistor M2 is respectively connected to the first pole S of the corresponding driving transistor M0 and the second pole of the first transistor M1.
  • the types of the first transistor M1 and the second transistor M2 may be different, for example, the first transistor M1 is an N-type transistor, the second transistor M2 is a P-type transistor, or the first transistor M1 is a P-type transistor.
  • the second transistor M2 is an N-type transistor.
  • the types of the first transistor M1 and the second transistor M2 may be the same, which may be designed and determined according to the actual application environment.
  • the pixel driving circuit 101 includes a driving transistor M0, a third transistor M3, a fourth transistor M4, and a storage capacitor Cst.
  • the control electrode G of the driving transistor M0, the first electrode S of the driving transistor M0 are connected to the second electrode of the first transistor M1 and the second electrode of the second transistor M2, and the second electrode D of the driving transistor M0 is connected to the anode of the OLED.
  • the control electrode of the third transistor M3 is connected to the input end of the first control electrode scan signal S1 and is configured to receive the first control electrode scan signal S1.
  • the first electrode of the third transistor M3 is connected to the input end of the data signal DA and is configured to receive the first control electrode scan signal S1.
  • the control electrode of the fourth transistor M4 is connected to the input end of the second control electrode scan signal S2 and is configured to receive the second control electrode scan signal S2.
  • the first electrode of the fourth transistor M4 is connected to the input end of the data signal DA and is configured to receive the second control electrode scan signal S2. It is configured to receive the data signal DA, and the second electrode of the fourth transistor M4 is connected to the control electrode G of the driving transistor M0.
  • the first end of the storage capacitor Cst is connected to the control electrode G of the driving transistor M0, and the second end of the storage capacitor Cst is connected to the ground terminal GND.
  • the driving transistor M0 may be an N-type transistor, and the types of the third transistor M3 and the fourth transistor M4 may be different, for example, the third transistor M3 is an N-type transistor, and the fourth transistor M4 is a P-type transistor.
  • the P-type fourth transistor M4 is turned on to transmit the data signal DA to the control electrode G of the driving transistor M0, which can prevent the voltage of the data signal DA from being affected by, for example, N The influence of the threshold voltage of the third transistor M3.
  • the third transistor M3 of the N type is turned on to transmit the data signal DA to the control electrode G of the driving transistor M0, which can prevent the voltage of the data signal DA from being affected by the P type.
  • the influence of the threshold voltage of the fourth transistor M4. In this way, the voltage range input to the control electrode G of the driving transistor M0 can be increased.
  • the type of the third transistor M3 and the fourth transistor M4 may be that the third transistor M3 is a P-type transistor, and the fourth transistor M4 is an N-type transistor.
  • the pixel driving circuit may be a 3T1C, 5T1C, or 7T1C circuit structure, or may be a circuit structure with an internal compensation function or an external compensation function.
  • the driving structure layer covers the entire display area 100 and the peripheral area 200.
  • the first insulating layer 12 and the second insulating layer 15 cover the entire display area and at least part of the peripheral area. In an exemplary embodiment, as shown in FIGS. 1 to 3, the first insulating layer 12 and the second insulating layer 15 cover the entire display area 100 and the peripheral area 200.
  • the first conductive pillar 13 and the second conductive pillar 16 are located in the display area 100 and the peripheral area 200.
  • a via hole exposing a part of the drain electrode is provided on the first insulating layer 12, and the first conductive pillar 13 is arranged in the via hole of the first insulating layer 12.
  • the reflective electrode 14 is connected to the drain electrode through the first conductive pillar 13.
  • the second insulating layer 15 is provided with a via hole exposing the reflective electrode 14, and the second conductive pillar 16 is provided in the via hole of the second insulating layer 15.
  • the display substrate may further include: an encapsulation layer 40.
  • the encapsulation layer 40 is located between the light-emitting structure layer 20 and the color filter layer 30.
  • the encapsulation layer 40 may include: a first inorganic encapsulation layer 41, a second inorganic encapsulation layer 42, and a third organic encapsulation layer 43.
  • the first inorganic encapsulation layer 41 is located on the side of the second inorganic encapsulation layer 42 close to the base substrate 10; the third organic encapsulation layer 43 is located on the side of the second inorganic encapsulation layer 42 away from the base substrate 10.
  • the color filter layer 30 is located in the display area 100.
  • the encapsulation layer 40 covers the entire display area 100 and at least a part of the peripheral area 200. In an exemplary embodiment, as shown in FIGS. 1 to 3, the encapsulation layer 40 covers the entire display area 100 and the entire peripheral area 200.
  • the encapsulation layer 40 is configured to isolate water and oxygen to protect the light emitting structure layer.
  • the manufacturing material of the first inorganic encapsulation layer 41 may include: silicon nitride.
  • the first inorganic encapsulation layer 41 can avoid damage to the light-emitting structure layer when the second inorganic encapsulation layer 42 is fabricated. Since the first inorganic encapsulation layer 41 has inorganic characteristics, it not only has good encapsulation characteristics, but also has good adhesion to the second electrode, which can ensure the encapsulation effect of the encapsulation layer.
  • the material of the second inorganic encapsulation layer 42 may include silicon oxide.
  • the second inorganic encapsulation layer can block water and oxygen from entering the light-emitting structure layer, and can prolong the service life of the light-emitting structure layer.
  • the thickness of the second inorganic encapsulation layer 42 may be greater than the thickness of the first inorganic encapsulation layer 41.
  • the manufacturing material of the third organic encapsulation layer 43 may include: parylene. Since the third organic encapsulation layer 43 has organic characteristics, it not only has better organic encapsulation characteristics, but also has better particle coating ability, which can well coat the particles on the film layer and prevent the film layer from being pierced. In addition, materials with organic characteristics can release the stress between the inorganic layers and prevent defects such as microcracks or peeling of the film layer due to high stress. The third organic encapsulation layer 43 also has better flatness characteristics, and can provide a flatter substrate for the subsequent production of the color filter layer, and prevent the color filter layer manufacturing process from damaging the second inorganic encapsulation layer.
  • the thickness of the third organic encapsulation layer 43 is 4500 nanometers to 5500 nanometers.
  • the first inorganic encapsulation layer 41 and the second inorganic encapsulation layer 42 are formed by a deposition process.
  • the deposition density of the first inorganic encapsulation layer 41 may be less than the deposition density of the second inorganic encapsulation layer 42.
  • the functional layer 50 may have a single-layer structure and a planar structure.
  • the functional layer 50 is located between the first inorganic encapsulation layer 41 and the second inorganic encapsulation layer 42, or between the second inorganic encapsulation layer 42 and the third organic encapsulation layer 43.
  • FIG. 1 illustrates an example where the functional layer 50 is located between the first inorganic encapsulation layer 41 and the second inorganic encapsulation layer 42
  • FIG. 2 illustrates that the functional layer 50 is located between the second inorganic encapsulation layer 42 and the third organic encapsulation layer 43.
  • the functional layer 50 is located in the entire display area 100.
  • the functional layer 50 is a transparent film layer; the light transmittance of the transparent film layer 50 is higher than 76%.
  • the material of the functional layer 50 may include: polyvinyl chloride or titanium dioxide nanowires doped with plasticizers, stabilizers, and ultraviolet light absorbers.
  • the functional layer 50 can shield more than 99.8% of the ultraviolet light, and can block more than 99.8% of the ultraviolet light used in the production of the color film layer 30 from entering the organic light-emitting layer 22, effectively reducing the ultraviolet light used in the production of the color film layer. Adversely affect the organic light-emitting layer.
  • the functional layer 50 is made of polyvinyl chloride doped with plasticizers, stabilizers and ultraviolet light absorbers, the mechanical properties of the functional layer 50 are relatively good, and because the functional layer is doped with ultraviolet light absorbers, Can effectively absorb ultraviolet light.
  • the material of the functional layer 50 is titanium dioxide nanowires
  • the particle size of the titanium dioxide in the titanium dioxide nanowires reaches the nanometer level, it can effectively scatter and absorb ultraviolet rays.
  • ultraviolet light acts on nanoparticles in the form of electromagnetic waves
  • the size of the nanoparticles is smaller than the wavelength of ultraviolet light
  • the electrons in the titanium dioxide nanowires are forced to vibrate at the frequency of the incident ultraviolet light waves, and become the secondary propagation source of electromagnetic waves, forming an anti-UV wave. Of scattering.
  • Titanium dioxide nanowires also have excellent mechanical properties. As the size decreases, titanium dioxide nanowires will exhibit better mechanical properties, which can improve the toughness of the functional layer.
  • the functional layer 50 since the functional layer 50 has better mechanical properties and better shape and toughness, the functional layer 50 is located between the first inorganic encapsulation layer 41 and the second inorganic encapsulation layer 42, or, Located between the second inorganic encapsulation layer 42 and the third organic encapsulation layer 43, the stress on the first inorganic encapsulation layer 41 and the second inorganic encapsulation layer 42 can be relieved, so that the first inorganic encapsulation layer 41 and the second inorganic encapsulation layer 42 The stress on the surface is released to avoid excessive stress on the inorganic layer, which may cause film explosion or breakage.
  • the functional layer 50 may be a multilayer structure.
  • the functional layer 50 includes: a first functional layer 51 and a second functional layer 52.
  • the first functional layer 51 is located between the first inorganic packaging layer 41 and the second inorganic packaging layer 42
  • the second functional layer 52 is located between the second inorganic packaging layer 42 and the third organic packaging layer 43.
  • the first functional layer 51 is a transparent film layer.
  • the light transmittance of the transparent film layer is higher than 76%.
  • the material of the first functional layer includes: polyvinyl chloride or titanium dioxide nanowires doped with plasticizers, stabilizers, and ultraviolet light absorbers.
  • the first functional layer can block more than 99.8% of the ultraviolet light used for making the color film layer 30 from entering the organic light emitting layer 22, effectively reducing the adverse effects of the ultraviolet light used for making the color film layer on the organic light emitting layer.
  • the second functional layer 52 is a transparent film layer.
  • the light transmittance of the transparent film layer is higher than 76%.
  • the material for the second functional layer may include: polyvinyl chloride or titanium dioxide nanowires doped with plasticizers, stabilizers, and ultraviolet light absorbers.
  • the second functional layer can block more than 99.8% of the ultraviolet light used for making the color film layer 30 from entering the organic light emitting layer 22, effectively reducing the adverse effects of the ultraviolet light used for making the color film layer on the organic light emitting layer.
  • the manufacturing material of the first functional layer may be the same as the manufacturing material of the second functional layer, or may be different.
  • the first functional layer may be a planar structure or a grid structure.
  • the second functional layer may be a planar structure or a grid structure.
  • FIG. 7A is a top view of the first functional layer in an exemplary embodiment
  • FIG. 7B is a top view of the second functional layer in an exemplary embodiment
  • FIG. 7A illustrates an example in which the first functional layer has a grid structure
  • FIG. 7B illustrates an example in which the second functional layer has a grid structure
  • the first functional layer 51 and the second functional layer 52 may have a grid structure.
  • the first functional layer includes: a first wiring 510 and a plurality of first opening regions 511 surrounded by the first wiring 510
  • the second functional layer includes: a second wiring 520 and surrounded by the second wiring 520
  • the second opening area 521 is formed.
  • a plurality of first opening regions are arranged in an array, and a plurality of second opening regions are arranged in an array.
  • the first opening regions of adjacent rows may be staggered, and a plurality of second opening regions may be staggered.
  • the orthographic projection of the plurality of first opening regions on the base substrate and the orthographic projection of the plurality of second opening regions on the base substrate do not have overlapping areas, which can prevent ultraviolet light from entering the organic Luminescent layer.
  • the first functional layer and the second functional layer of the grid-like structure can make the stress of the first inorganic encapsulation layer and the second inorganic encapsulation layer more dispersed, and can better release the first inorganic encapsulation layer.
  • the stress of the layer and the second inorganic encapsulation layer prevents excessive stress of the inorganic layer from causing film explosion or breakage, which can improve the reliability and reliability of the display substrate.
  • each sub-pixel shrinks inward, resulting in the first inorganic encapsulation layer and the second inorganic encapsulation layer that overlap with the overlapping part of the adjacent filter on the base substrate. 2.
  • the local stress of the inorganic encapsulation layer is relatively large.
  • the orthographic projection of the pixel definition layer on the base substrate covers the orthographic projection of the first wiring or the second wiring on the base substrate; the first wiring or the second wiring is on the base substrate.
  • the orthographic projection on the base substrate at least partially overlaps with the overlapping part of the adjacent filters, and the arrangement of the first or second traces can relieve the overlap with the overlapping part of the adjacent filters on the base substrate.
  • the local stress of the first inorganic encapsulation layer and the second inorganic encapsulation layer can better release the stress of the first inorganic encapsulation layer and the second inorganic encapsulation layer, prevent the inorganic layer from being excessively stressed and cause film explosion or breakage, which can improve Show the reliability and reliability of the substrate.
  • the first functional layer may be a grid structure
  • the second functional layer may be a planar structure.
  • the first functional layer includes: a first wiring and a plurality of first opening areas surrounded by the first wiring; the orthographic projection of the pixel definition layer on the base substrate covers the front of the first wiring on the base substrate Projection; the orthographic projection of the first trace on the base substrate and the overlapped portion of the adjacent filter at least partially overlap.
  • the first functional layer has a grid structure, which can make the stresses of the first inorganic encapsulation layer and the second inorganic encapsulation layer more dispersed, and can better release the stresses of the first inorganic encapsulation layer and the second inorganic encapsulation layer. Preventing the inorganic layer from being excessively stressed and causing film explosion or breakage can improve the reliability and reliability of the display substrate.
  • the first functional layer may be a planar structure
  • the second functional layer may be a grid structure.
  • the second functional layer includes: a second wiring and a second opening area surrounded by the second wiring; the orthographic projection of the pixel definition layer on the base substrate covers the orthographic projection of the second wiring on the base substrate; The orthographic projection of the second trace on the base substrate at least partially overlaps with the overlapping portion of the adjacent filter.
  • the second functional layer has a grid-like structure, which can make the stress of the second inorganic encapsulation layer more dispersed, can better release the stress of the second inorganic encapsulation layer, and prevent the inorganic layer from being excessively stressed and causing film explosion or breakage. , Can improve the reliability and reliability of the display substrate.
  • the first functional layer and the second functional layer may have a planar structure.
  • the cross-sectional shape of the first opening area 511 includes a polygon, a circle, or an ellipse, and the polygon includes a square or a prism.
  • FIG. 7A illustrates an example in which the cross-sectional shape of the first opening area is a square.
  • the cross-sectional shape of the second opening area 521 includes: a polygon, a circle, or an ellipse, and the polygon includes: a square or a prism. As shown in FIG. 7B, the cross-sectional shape of the second opening area is a square as an example for description.
  • the cross-sectional shape of the first opening region and the cross-sectional shape of the second opening region may be the same or different.
  • FIGS. 7A and 7B show the cross-sectional shape of the first opening region and the second opening region The cross-sectional shape is the same as an example.
  • the display substrate further includes: the display substrate may further include: a flat layer 60, a bonding layer 70 and a cover plate 80.
  • the flat layer 60 is located on the side of the color filter layer 30 away from the base substrate 10; the bonding layer 70 is located on the side of the flat layer 60 away from the base substrate 10, and the cover plate 80 is located on the side of the bonding layer 70 away from the base substrate 10. .
  • the flat layer 60 and the bonding layer 70 cover the entire display area 100 and the entire peripheral area 200.
  • the boundary of the cover plate 80 is located in the binding area 300.
  • the material of the flat layer 60 may include: parylene.
  • the manufacturing material of the bonding layer 70 may include silicon dioxide.
  • the bonding layer made of inorganic materials can better fit the cover plate.
  • the cover plate 80 may be a glass cover plate.
  • the display substrate may further include: a sealant 90.
  • the cover plate 80 is fixed to the base substrate 10 by the frame sealing glue 90.
  • the sealant 90 may be disposed between the base substrate 10 and the cover plate 80, which can provide protection against water and oxygen intrusion, and greatly increase the life of the silicon-based OLED display substrate.
  • the frame sealing glue may be arranged on the side surface of the cover plate, the peripheral sides of the cover plate and the base substrate are sealed by the frame sealing glue, and the end surface of the frame sealing glue away from the base substrate is located on the cover Between the surface of the plate adjacent to the base substrate and the surface of the cover plate away from the base substrate, the sealing effect can be ensured, and the thickness of the display substrate can be prevented from being higher than the cover plate by the sealant.
  • the peripheral area 200 may include: a power supply electrode 201, an auxiliary electrode 202, a connection electrode 203, and a second electrode 23.
  • the auxiliary electrode 202 is connected to the power supply electrode 201 through a first conductive pillar
  • the connecting electrode 203 is connected to the auxiliary electrode 202 through a second conductive pillar.
  • the connecting electrode 203 and the second electrode 23 directly overlap, that is, the connecting electrode 203 and the second electrode 23 are in direct contact, and there is no other film layer.
  • the power supply electrode 201 and the source and drain electrodes of the transistors in the driving structure layer located in the display area are arranged in the same layer, and are formed by the same process.
  • the auxiliary electrode 202 is arranged in the same layer as the reflective electrode 14 in the driving structure layer in the display area, and is formed by the same process.
  • the connecting electrode 203 is arranged in the same layer as the first electrode 21 located in the display area, and is formed by the same manufacturing process.
  • the second electrode 23 may be connected to the connection electrode 203 through a via hole, so that the connection electrode 203 and the auxiliary electrode 202 form a conductive channel between the second electrode 23 and the power supply electrode 201.
  • the voltage signal provided by the power supply electrode 201 is transmitted to the second electrode 23 through the conductive channel.
  • the conductive channel is called the cathode ring structure.
  • the cathode ring is a ring structure located in the peripheral area, and is a conductive channel surrounding the display area, which can be implemented to supply power to the second electrode.
  • the bonding area 300 may include: a bonding electrode 301 and a bonding pad 302.
  • the bonding electrode 301 located in the bonding area 300 and the source and drain electrodes of the transistor located in the display area are arranged in the same layer, and are formed by the same process.
  • FIG. 8 is a flowchart of a manufacturing method of a display substrate provided by an embodiment of the disclosure. As shown in FIG. 8, an embodiment of the present disclosure also provides a manufacturing method of a display substrate, which is configured to manufacture a display substrate.
  • the manufacturing method of a display substrate provided by the embodiment of the present disclosure includes the following steps:
  • Step S100 providing a base substrate.
  • Step S200 forming a pixel definition layer and a light emitting structure layer on the base substrate.
  • step S300 a functional layer and a color film layer are sequentially formed on the light-emitting structure layer.
  • the color film layer includes: a plurality of filters; the orthographic projection of adjacent filters on the base substrate overlaps, and the orthographic projection of the pixel definition layer on the base substrate covers the overlapped portion of the adjacent filters on the substrate.
  • the orthographic projection on the substrate; the functional layer is located between the light-emitting structure layer and the color filter layer, and the orthographic projection on the base substrate at least partially overlaps the overlapping portion of the adjacent filter.
  • the display substrate includes a display area, a peripheral area, and a binding area.
  • the manufacturing method of the display substrate provided by the embodiment of the present disclosure is configured to manufacture the display substrate provided in any of the foregoing embodiments, and the implementation principle and the implementation effect are similar, and will not be repeated here.
  • the light emitting structure layer includes: a first electrode, an organic light emitting layer, and a second electrode.
  • Step S2 includes: forming a driving structure layer on a base substrate; forming a first electrode on the driving structure layer; sequentially forming a pixel definition layer, an organic light emitting layer, and a second electrode on the driving structure layer on which the first electrode is formed to The light-emitting structure layer is formed.
  • Step S3 includes: forming a first inorganic encapsulation layer using a chemical vapor deposition process on the light-emitting structure layer; forming a functional layer on the first inorganic encapsulation layer; forming a second inorganic encapsulation layer on the functional layer using an atomic layer deposition process; 2.
  • a third organic encapsulation layer is formed on the inorganic encapsulation layer using a molecular layer deposition process; and a color film layer is formed on the third organic encapsulation layer.
  • the functional layer is a single-layer structure.
  • Step S3 includes: forming a first inorganic encapsulation layer using a chemical vapor deposition process on the light-emitting structure layer; forming a second inorganic encapsulation layer using an atomic layer deposition process on the first inorganic encapsulation layer; forming a functional layer on the second inorganic encapsulation layer ; A molecular layer deposition process is used to form a third organic encapsulation layer on the functional layer; a color film layer is formed on the third organic encapsulation layer.
  • the functional layer is a multilayer structure.
  • the functional layer includes: a first functional layer and a second functional layer;
  • step S3 includes: forming a first inorganic encapsulation layer on the light-emitting structure layer by using a chemical vapor deposition process; forming a first functional layer on the first inorganic encapsulation layer;
  • An atomic layer deposition process is used to form a second inorganic encapsulation layer on a functional layer; a second functional layer is formed on the second inorganic encapsulation layer; a molecular layer deposition process is used to form a third organic encapsulation layer on the second functional layer;
  • a color film layer is formed on the organic encapsulation layer.
  • the manufacturing method of the display substrate may further include: sequentially forming a flat layer, a bonding layer, and a cover plate on the color filter layer.
  • Step S1 A base substrate 10 is provided.
  • the base substrate 10 is provided with a transistor 11 located in the display area 100, a power supply electrode 201 located in the peripheral area 200, and a bonding electrode 301 located in the bonding area 300, as shown in FIG. 9 .
  • Step S2 forming a first insulating layer 12 on the base substrate 10; forming a first conductive pillar 13 in the via hole of the first insulating layer 12; forming a reflective electrode 14 located in the display area 100 on the first insulating layer 12;
  • the auxiliary electrode 202 is located in the peripheral area 200;
  • the second insulating layer 15 is formed on the first insulating layer 12 where the reflective electrode 14 and the auxiliary electrode 202 are formed;
  • the second conductive pillar 16 is formed in the via hole of the second insulating layer 15, To form a driving structure layer, as shown in FIG. 10.
  • Step S3 forming a first electrode 21 located in the display area 100 and a connecting electrode 203 located in the peripheral area on the drive structure layer, forming a pixel definition layer 24 on the drive structure layer where the first electrode 21 is formed, and forming a pixel definition layer
  • the organic light emitting layer 22 located in the display area 100 and the second electrode 23 located in the display area 100 and the peripheral area 200 are sequentially formed on the driving structure layer of the layer 24, as shown in FIG. 11.
  • Step S4 using a chemical vapor deposition process on the second electrode 23 to form a first inorganic encapsulation layer 41 covering the entire display area 100 and the entire peripheral area 200, as shown in FIG. 12.
  • Step S5 forming a first functional layer 51 covering the entire display area 100 on the first inorganic encapsulation layer 41, as shown in FIG. 13.
  • step S6 an atomic layer deposition process is used on the first functional layer 51 to form a second inorganic encapsulation layer 42 covering the entire display area 100 and the entire peripheral area 200, as shown in FIG. 14.
  • Step S7 forming a second functional layer 52 covering the entire display area 100 on the second inorganic encapsulation layer 42, as shown in FIG. 15.
  • Step S8 adopting a molecular layer deposition process on the second functional layer 52 to form a third organic encapsulation layer 43 covering the entire display area 100 and the entire peripheral area 200, as shown in FIG. 16.
  • Step S9 forming a color film layer 30 on the third organic encapsulation layer 43, as shown in FIG. 17.
  • Step S10 forming a flat layer 60, a bonding layer 70 and a cover plate 80 on the color filter layer 30, and filling a sealant 90 between the cover plate 80 and the base substrate 10, as shown in FIG. 3.
  • the embodiment of the present disclosure also provides a display device, including a display substrate.
  • the display device includes: a VR device or an AR device.
  • the display substrate is the display substrate provided by any of the foregoing embodiments, and the implementation principle and the implementation effect are similar, and will not be repeated here.

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Abstract

一种显示基板及其制作方法、显示装置，显示基板包括：衬底基板以及设置在衬底基板上的像素定义层、发光结构层、功能层和彩膜层；彩膜层包括：多个滤光片；相邻滤光片在衬底基板上的正投影部分重叠，像素定义层在衬底基板上的正投影覆盖相邻滤光片的重叠部分在衬底基板上的正投影；功能层位于发光结构层和彩膜层之间，且在衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。

Description

显示基板及其制作方法、显示装置 技术领域
本公开涉及但不限于显示技术领域，特别涉及一种显示基板及其制作方法、显示装置。
背景技术
微型有机发光二极管(Micro Organic Light-Emitting Diode，简称Micro-OLED)是近年来发展起来的微型显示器，硅基OLED是其中一种。硅基OLED不仅可以实现像素的有源寻址，并且可以实现在硅基衬底上制备包括时序控制(TCON)电路、过电流保护(OCP)电路等多种功能电路，有利于减小系统体积，实现轻量化。硅基OLED采用成熟的互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，简称CMOS)集成电路工艺制备，具有体积小、高分辨率(Pixels Per Inch，简称PPI)、高刷新率等优点，广泛应用在虚拟现实(Virtual Reality，简称VR)或增强现实(Augmented Reality，简称AR)近眼显示领域中。
发明概述
以下是对本公开详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
第一方面，本公开提供了一种显示基板，包括：衬底基板以及设置在所述衬底基板上的像素定义层、发光结构层、功能层和彩膜层；
所述彩膜层包括：多个滤光片；相邻滤光片在所述衬底基板上的正投影部分重叠，所述像素定义层在衬底基板上的正投影覆盖所述相邻滤光片的重叠部分在衬底基板上的正投影；
所述功能层位于所述发光结构层和所述彩膜层之间，且在所述衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。
在一些可能的实现方式中，所述显示基板还包括：位于所述发光结构层和所述彩膜层之间的封装层；
所述封装层包括：第一无机封装层、第二无机封装层和第三有机封装层；
所述第一无机封装层位于所述第二无机封装层靠近所述衬底基板的一侧；
所述第三有机封装层位于所述第二无机封装层远离所述衬底基板的一侧；
所述第一无机封装层的制作材料包括：氮化硅；所述第二无机封装层的制作材料包括：氧化硅；所述第三有机封装层的制作材料包括：聚对二甲苯；所述第三有机封装层的厚度为4500纳米至5500纳米。
在一些可能的实现方式中，所述功能层为单层结构，且为面状结构；
所述功能层位于所述第一无机封装层和所述第二无机封装层之间，或者，位于所述第二无机封装层和所述第三有机封装层之间；
所述功能层为透明膜层；
所述功能层的制作材料包括：掺杂有增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线。
在一些可能的实现方式中，所述功能层为多层结构，所述功能层包括：第一功能层和第二功能层；
所述第一功能层位于所述第一无机封装层和所述第二无机封装层之间，所述第二功能层位于所述第二无机封装层和所述第三有机封装层之间；
所述第一功能层和所述第二功能层均为透明膜层；
所述第一功能层的制作材料包括：掺杂增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线；
所述第二功能层的制作材料包括：掺杂增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线。
在一些可能的实现方式中，所述第一功能层和所述第二功能层为网格状结构；
所述第一功能层包括：第一走线以及由所述第一走线围绕而成的多个第一开口区域；所述第二功能层包括：第二走线以及由所述第二走线围绕而成 的多个第二开口区域；
所述多个第一开口区域在衬底基板上的正投影与所述多个第二开口区域在衬底基板上的正投影不存在重叠区域。
在一些可能的实现方式中，所述像素定义层在衬底基板上的正投影覆盖所述第一走线或所述第二走线在衬底基板上的正投影；
所述第一走线或所述第二走线在衬底基板上的正投影与所述相邻滤光片的重叠部分至少部分重叠。
在一些可能的实现方式中，所述第一功能层为网格状结构，所述第二功能层为面状结构；
所述第一功能层包括：第一走线以及由所述第一走线围绕而成的多个第一开口区域；所述像素定义层在衬底基板上的正投影覆盖所述第一走线在衬底基板上的正投影；所述第一走线在衬底基板上的正投影与所述相邻滤光片的重叠部分至少部分重叠；
或者，所述第一功能层为面状结构，所述第二功能层为网格状结构；
所述第二功能层包括：第二走线以及由所述第二走线围绕而成的第二开口区域；所述像素定义层在衬底基板上的正投影覆盖所述第二走线在衬底基板上的正投影；所述第二走线在衬底基板上的正投影与所述相邻滤光片的重叠部分至少部分重叠；
或者，所述第一功能层和所述第二功能层为面状结构。
在一些可能的实现方式中，所述第一开口区域的截面形状包括：多边形、圆形或者椭圆形；
所述第二开口区域的截面形状包括：多边形、圆形或者椭圆形。
在一些可能的实现方式中，所述第一无机封装层和所述第二无机封装层采用沉积工艺形成；所述第一无机封装层的沉积密度小于所述第二无机封装层的沉积密度。
在一些可能的实现方式中，所述显示基板还包括：驱动结构层、平坦层、贴合层和盖板；
所述驱动结构层位于所述发光结构层靠近所述衬底基板的一侧，所述驱动结构层与所述发光结构层连接；
所述平坦层位于所述彩膜层远离所述衬底基板的一侧；所述平坦层的制作材料包括：聚对二甲苯；
所述贴合层位于所述平坦层远离所述衬底基板的一侧，所述贴合层的制作材料包括：二氧化硅；
所述盖板位于所述贴合层远离所述衬底基板的一侧。
第二方面，本公开还提供了一种显示装置，包括：上述显示基板。
第三方面，本公开还提供了一种显示基板的制作方法，设置为制作上述显示基板，所述方法包括：
提供一衬底基板；
在所述衬底基板上形成像素定义层和发光结构层；
在所述发光结构层上依次形成功能层和彩膜层；所述彩膜层包括：多个滤光片；相邻滤光片在所述衬底基板上的正投影部分重叠，所述像素定义层在衬底基板上的正投影覆盖所述相邻滤光片的重叠部分在衬底基板上的正投影；
所述功能层位于所述发光结构层和所述彩膜层之间，且在所述衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。
在一些可能的实现方式中，所述功能层为单层结构，所述在所述发光结构层上依次形成功能层和彩膜层包括：
在所述发光结构层上采用化学气相沉积工艺形成第一无机封装层；
在第一无机封装层上形成功能层；
在功能层上采用原子层沉积工艺形成第二无机封装层；
在第二无机封装层上采用分子层沉积工艺形成第三有机封装层；
在第三有机封装层上形成彩膜层；
或者，
在所述发光结构层上采用化学气相沉积工艺形成第一无机封装层；
在第一无机封装层上采用原子层沉积工艺形成第二无机封装层；
在第二无机封装层上形成功能层；
在功能层上采用分子层沉积工艺形成第三有机封装层；
在第三有机封装层上形成彩膜层。
在一些可能的实现方式中，所述功能层为多层结构，所述功能层包括：第一功能层和第二功能层；
所述在所述发光结构层上依次形成功能层和彩膜层包括：
在所述发光结构层上采用化学气相沉积工艺形成第一无机封装层；
在第一无机封装层上形成第一功能层；
在第一功能层上采用原子层沉积工艺形成第二无机封装层；
在第二无机封装层上形成第二功能层；
在第二功能层上采用分子层沉积工艺形成第三有机封装层；
在第三有机封装层上形成彩膜层。
在一些可能的实现方式中，所述发光结构层包括：第一电极，有机发光层和第二电极，所述在所述衬底基板上形成像素定义层和发光结构层包括：
在所述衬底基板上形成驱动结构层；
在所述驱动结构层上形成第一电极；
在形成有第一电极的驱动结构层上依次形成像素定义层、有机发光层和第二电极，以形成发光结构层；
所述在所述发光结构层上依次形成功能层和彩膜层之后，所述方法还包括：
在所述彩膜层上依次形成平坦层、贴合层和盖板。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图概述
附图用来提供对本公开技术方案的理解，并且构成说明书的一部分，与 本公开的实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。
图1为本公开实施例提供的显示基板的一个结构示意图；
图2为本公开实施例提供的显示基板的另一结构示意图；
图3为本公开实施例提供的显示基板的又一结构示意图；
图4为一种示例性实施例提供的有机发光层的结构示意图；
图5为一种示例性实施例提供的电路原理的示意图；
图6为一种示例性实施例提供的电压控制电路和像素驱动电路的电路实现的示意图；
图7A为一种示例性实施例中的第一功能层的俯视图；
图7B为一种示例性实施例中的第二功能层的俯视图；
图8为本公开实施例提供的显示基板的制作方法的流程图；
图9至图17为一种示例性实施例提供的显示基板的制作方法的示意图。
详述
下文中将结合附图对本公开的实施例进行详细说明。在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互任意组合。
本公开描述了多个实施例，但是该描述是示例性的，而不是限制性的，并且对于本领域的普通技术人员来说，在本公开所描述的实施例包含的范围内可以有更多的实施例和实现方案。尽管在附图中示出了许多可能的特征组合，并在详述中进行了讨论，但是所公开的特征的许多其它组合方式也是可能的。除非特意加以限制的情况以外，任何实施例的任何特征或元件可以与任何其它实施例中的任何其他特征或元件结合使用，或可以替代任何其它实施例中的任何其他特征或元件。
本公开包括并设想了与本领域普通技术人员已知的特征和元件的组合。本公开已经公开的实施例、特征和元件也可以与任何常规特征或元件组合，以形成由权利要求限定的技术方案。任何实施例的任何特征或元件也可以与 来自其它技术方案的特征或元件组合，以形成另一个由权利要求限定的技术方案。因此，应当理解，在本公开中示出的任何特征可以单独地或以任何适当的组合来实现。因此，除了根据所附权利要求及其等同替换所做的限制以外，实施例不受其它限制。此外，可以在所附权利要求的保护范围内进行各种修改和改变。
除非另外定义，本公开公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述的对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在本说明书中，晶体管是指至少包括栅电极、漏电极以及源电极这三个端子的元件。晶体管在漏电极(漏电极端子、漏区域或漏电极)与源电极(源电极端子、源区域或源电极)之间具有沟道区域，并且电流可以流过漏电极、沟道区域以及源电极。沟道区域是指电流主要流过的区域。
在本说明书中，第一极可以为漏电极、第二极可以为源电极，或者第一极可以为源电极、第二极可以为漏电极。在使用极性相反的晶体管的情况或电路工作中的电流方向变化的情况等下，“源电极”及“漏电极”的功能有时互相调换。因此，在本说明书中，“源电极”和“漏电极”可以互相调换。
在本说明书中，“连接”包括构成要素通过具有某种电作用的元件连接在一起的情况。“具有某种电作用的元件”只要可以进行连接的构成要素间的电信号的授受，就对其没有特别的限制。“具有某种电作用的元件”的例子不仅包括电极和布线，而且还包括晶体管等开关元件、电阻器、电感器、电容器、其它具有各种功能的元件等。
在本说明书中，“膜”和“层”可以相互调换。例如，有时可以将“导电层”换成为“导电膜”。与此同样，有时可以将“绝缘膜”换成为“绝缘层”。
在一种显示基板中，在有机发光层上还设置有封装层和彩膜层。在制作封装层时，由于封装层中的部分有机膜层的厚度较薄，无法释放封装层中的无机膜层的应力，使得封装层中的无机膜层的应力较大，极易造成断裂，无法保护有机发光层。另外，在制作彩膜层时，采用紫外线对彩膜层进行固化时，紫外线会损伤有机发光层。因此，在有机发光层的后续制程中会对有机发光层造成不利影响，降低了显示基板的显示效果。
图1为本公开实施例提供的显示基板的一个结构示意图，图2为本公开实施例提供的显示基板的另一结构示意图，图3为本公开实施例提供的显示基板的又一结构示意图。如图1至3所示，本公开实施例提供的显示基板包括：衬底基板10以及设置在衬底基板10上的发光结构层20、像素定义层24、功能层50和彩膜层30。
彩膜层30包括：多个滤光片31；相邻滤光片在衬底基板10上的正投影部分重叠，像素定义层24在衬底基板上的正投影覆盖相邻滤光片的重叠部分在衬底基板上的正投影。功能层50位于发光结构层20和彩膜层30之间，且在衬底基板10上的正投影与相邻滤光片的重叠部分至少部分重叠。
在一种示例性实施例中，衬底基板10可以为硅基衬底或者玻璃衬底。
在一种示例性实施例中，发光结构层20可以包括：第一电极21、有机发光层22和第二电极23。
在一种示例性实施例中，第一电极21位于有机发光层22靠近衬底基板10的一侧，第二电极23位于有机发光层22远离衬底基板10的一侧。
在一种示例性实施例中，显示基板可以为顶发射结构。
在一种示例性实施例中，第一电极21可以为反射电极。第一电极21可以为多层复合结构。
在一种示例性实施例中，第一电极21可以包括：叠层设置的第一导电层、第二导电层和第三导电层。
在一种示例性实施例中，第一导电层和第三导电层的制作材料可以为钛。第二导电层的制作材料可以为铝。
图4为一种示例性实施例提供的有机发光层的结构示意图。如图4所示， 一种示例性实施例提供的有机发光层包括在第一电极与第二电极之间依次叠设的第一发光子层331、第一电荷产生层332、第二发光子层333、第二电荷产生层334和第三发光子层335。
第一发光子层331设置为出射第一颜色光，包括依次叠设的第一空穴传输层(HTL)3311、第一发光材料层(EML)3312和第一电子传输层(ETL)3313。第二发光子层333设置为出射第二颜色光，包括依次叠设的第二空穴传输层3331、第二发光材料层3332和第二电子传输层3333。第三发光子层335设置为出射第三颜色光，包括依次叠设的第三空穴传输层3351、第三发光材料层3352和第三电子传输层3353。第一电荷产生层332设置在第一发光子层331与第二发光子层333之间，设置为将两个发光子层串联起来，实现载流子的传递。第二电荷产生层334设置在第二发光子层333与第三发光子层335之间，设置为将两个发光子层串联起来，实现载流子的传递。由于有机发光层包括出射第一颜色光的第一发光材料层、出射第二颜色光的第二发光材料层和出射第三颜色光的第三发光材料层，因而有机发光层最终出射的光为混合光。例如，可以设置第一发光材料层是出射红光的红光材料层，第二发光材料层是出射绿光的绿光材料层，第三发光材料层是出射蓝光的蓝光材料层，因而有机发光层最终出射白光。
在实际实施时，可以根据实际需求设计有机发光层的结构。每个发光子层中，为了提高电子和空穴注入发光材料层的效率，可以设置空穴注入层和电子注入层。为了简化有机发光层的结构，可以取消第一电子传输层3313、第一电荷产生层332和第二空穴传输层3331，即第二发光材料层3332可以直接设置在第一发光材料层3312上。
在一种示例性实施例中，有机发光层可以采用出射第一颜色光的有机发光层和出射第一颜色光的互补光的有机发光层，两个有机发光层相对于衬底基板依次堆叠，从而整体上发白光。
在一种示例性实施例中，第一电极21在衬底基板10上的正投影覆盖有机发光层22在衬底基板10上的正投影，即第一电极21的尺寸大于有机发光层22的尺寸，可以提高显示基板的显示亮度。
在一种示例性实施例中，第二电极23可以为面状电极。
在一种示例性实施例中，第二电极23为透射电极，设置为透射有机发光层22发射的经第一电极21反射的光线。
在一种示例性实施例中，第二电极23的制作材料可以为氧化铟锡或者氧化锌锡，或者可以为其他透明导电材料。
如图1至3所示，在显示基板中不同颜色的滤光片的边界存在一定交叠。由于显示基板中的像素尺寸很小，后制成的滤光片的边缘会叠加在之前制成的滤光片上，造成滤光片之间存在厚度差异，导致彩膜层不均匀，使得彩膜层30远离衬底基板10的表面不平坦。
在一种示例性实施例中，彩膜层30可以采用白光结合彩膜的方式实现全彩显示。采用白光结合彩膜方式可以实现大于2000的高分辨率，可以适应VR/AR需求。
在一种示例性实施例中，多个滤光片31呈阵列排布。
在一种示例性实施例中，滤光片31的形状可以为六边形、长条形或近似椭圆形。
在一种示例性实施例中，滤光片31的面积小于20μm 2。
在一种示例性实施例中，滤光片31的制备温度小于90度。
在一种示例性实施例中，彩膜层30至少包括第一颜色滤光片、第二颜色滤光片和第三颜色滤光片。或者彩膜层30还可以包括：白色滤光片或者其他颜色的滤光片。
在一种示例性实施例中，以彩膜层30包括第一颜色滤光片，第二颜色滤光片和第三颜色滤光片为例，位于一个像素区域内的彩膜层包括的第一颜色滤光片、第二颜色滤光片和第三颜色的滤光片沿一个像素区域中的多个子像素的排布方式排布。
在一种示例性实施例中，第一颜色滤光片、第二颜色滤光片和第三颜色滤光片设置在同一表面上。在平行于表面的平面上，第二颜色滤光片设置在第一颜色滤光片的第一侧，第三颜色滤光片设置在第一颜色滤光片的与第一侧相对的第二侧。
在一种示例性实施例中，第二颜色滤光片和第三颜色滤光片至少之一覆 盖部分第一颜色滤光片；至少部分第一颜色滤光片与第二颜色滤光片和第三颜色滤光片均不交叠；第二颜色滤光片和第三颜色滤光片完全不交叠。
在一种示例性实施例中，构图工艺包括：光刻胶涂覆、曝光、显影、刻蚀、剥离工艺。
在一种示例性实施例中，采用第一次构图工艺形成第一颜色滤光片。位于第一颜色滤光片第一侧的第二颜色滤光片采用第二次构图工艺形成，第二颜色滤光片部分覆盖在第一颜色滤光片，可以减少第二颜色与彩膜层以下的膜层之间的接触面积。之后采用第三次构图工艺形成位于第一颜色滤光片第二侧的第三颜色滤光片，第三颜色滤光片部分覆盖在第二颜色滤光片，可以减少第三颜色与彩膜层以下的膜层之间的接触面积。
在一种示例性实施例中，第一颜色滤光片可以为绿(G)色滤光片，第二颜色滤光片可以为红(R)色滤光片，第三颜色滤光片可以为蓝(B)色滤光片，或者第一颜色滤光片可以为蓝色滤光片，第二颜色滤光片可以为绿色滤光片。第三颜色滤光片可以为红色滤光片。
在一种示例性实施例中，绿色滤光片的粘附性大于红色滤光片的粘附性和蓝色滤光片的粘附性。
以第一颜色滤光片可以为绿(G)色滤光片，第二颜色滤光片可以为红(R)色滤光片，第三颜色滤光片可以为蓝(B)色滤光片为例，粘附性大的绿色滤光片先形成，粘附性小的红色滤光片后形成，且粘附性小的红色滤光片部分覆盖在粘附性大的绿色滤光片上，可以减小粘附性小的红色滤光片与彩膜层以下膜层之间的接触面积。绿色滤光片和红色滤光片性质类似，绿色滤光片和红色滤光片之间的粘附力大于红色滤光片与彩膜层以下膜层之间的粘附力，这样和红色滤光片完全没有覆盖绿色滤光片的情形相比，红色滤光片部分覆盖绿色滤光片可以减小绿色滤光片和红色滤光片的整体从彩膜层以下膜层发生剥离的可能性。此外，由于红色滤光片的粘附性小，其流动性好，在形成红色滤光片的过程中，可以提高绿色滤光片和红色滤光片的整体在二者交叠的位置处膜厚的均一性。之后，形成粘附性小的蓝色滤光片，且粘附性小的蓝色滤光片部分覆盖在粘附性大的绿色滤光片上，可以减小粘附性小的蓝色滤光片与彩膜层以下膜层之间的接触面积。绿色滤光片和蓝色滤光片 性质类似，绿色滤光片和蓝色滤光片之间的粘附力大于蓝色滤光片与彩膜层以下膜层之间的粘附力，这样和蓝色滤光片完全没有覆盖绿色滤光片的情形相比，蓝色滤光片部分覆盖绿色滤光片可以减小绿色滤光片和蓝色滤光片的整体从彩膜层以下膜层发生剥离的可能性。此外，由于蓝色滤光片的粘附性小，其流动性好，在形成蓝色滤光片的过程中，可以提高绿色滤光片和蓝色滤光片的整体在二者交叠的位置处膜厚的均一性。
在一种示例性实施例中，位于不同像素区域中的同一颜色的滤光片可以在同一制程中形成。
在一种示例性实施例中，像素定义层24的制作材料可以为聚酰亚胺、亚克力或聚对苯二甲酸乙二醇酯。
在一种示例性实施例中，显示基板还可以包括：设置在衬底基板10和发光结构层20之间的驱动结构层。驱动结构层与第一电极21连接。驱动结构层包括：设置在衬底基板10中的晶体管11以及依次设置在衬底基板10上的第一绝缘层12、第一导电柱13、反射电极14、第二绝缘层15和第二导电柱16。
在一种示例性实施例中，晶体管11的有源层可以设置于衬底基板10的内部。
在一种示例性实施例中，晶体管11可以为金属氧化物半导体场效应管(Metal Oxide Semiconductor，简称MOS)。
在一种示例性实施例中，晶体管可以包括：有源层、栅电极、源电极、漏电极以及栅连接电极。其中，源电极和漏电极分别与有源层连接，栅连接电极通过第二导电柱与栅电极连接。
在一种示例性实施例中，晶体管可以为底栅结构，或者可以为顶栅结构。
在一种示例性实施例中，有源层的制作材料可以包括：金属氧化物。
在一种示例性实施例中，第一绝缘层12和第二绝缘层15的制作材料可以为硅氧化物(SiOx)、硅氮化物(SiNx)或氮氧化硅(SiON)。第一绝缘层12和第二绝缘层15的结构可以是单层结构，或者可以是多层复合结构。
在一种示例性实施例中，第一导电柱13和第二导电柱16的制作材料可 以为钨。
在一种示例性实施例中，反射电极14的制作材料可以为银或者铝。反射电极14的结构可以是单层结构，或者可以是多层复合结构。
本公开实施例提供的显示基板包括：衬底基板以及设置在衬底基板上的像素定义层、发光结构层、功能层和彩膜层；彩膜层包括：多个滤光片；相邻滤光片在衬底基板上的正投影部分重叠，像素定义层在衬底基板上的正投影覆盖相邻滤光片的重叠部分在衬底基板上的正投影；功能层位于发光结构层和彩膜层之间，且在衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。本公开通过设置位于发光结构层和彩膜层功能层可以减少后续制程对有机发光层的影响，可以提升显示基板的显示效果。
一种示例性实施例中，如图1至3所示，显示基板可以包括：显示区域100、包围显示区域100的外围区域200以及设置在外围区域200远离显示区域100一侧的绑定区域300。
在一种示例性实施例中，显示区域100中设置有规则排布的多个子像素。每个子像素包括：发光元件和设置为驱动发光元件发光的像素驱动电路。外围区域200中设置有向像素驱动电路提供控制信号的控制电路。绑定区域300中设置有与外部柔性线路板(Flexible Printed Circuit，简称FPC)绑定连接的焊盘组件。图1至3是以显示区域中的三个子像素100A、100B和100C为例进行说明的。
在一种示例性实施例中，晶体管可以包括：开关晶体管和驱动晶体管。衬底基板10上的多个晶体管11可以构成像素驱动电路。
图5为一种示例性实施例提供的电路原理的示意图。如图5所示，显示区域中的多个子像素规则排布，以形成多个显示行和多个显示列。每个子像素包括像素驱动电路101以及与像素驱动电路101连接的发光器件102。像素驱动电路101至少包括驱动晶体管。控制电路至少包括多个电压控制电路110，每个电压控制电路110与多个像素驱动电路101连接。例如，一个电压控制电路110与一个显示行中的像素驱动电路101连接，该显示行像素驱动电路101中驱动晶体管的第一极共同连接该电压控制电路110，每个驱动晶体管的第二极与本子像素的发光器件102的阳极连接，发光器件102的阴极 连接第二电源信号VSS的输入端。电压控制电路110分别与第一电源信号VDD的输入端、初始化信号Vinit的输入端、复位控制信号RE的输入端和发光控制信号EM的输入端连接。电压控制电路110被配置为响应于复位控制信号RE，将初始化信号Vinit输出至驱动晶体管的第一极，控制对应的发光器件102复位。电压控制电路110还被配置为响应于发光控制信号EM，将第一电源信号VDD输出至驱动晶体管的第一极，以驱动发光器件102发光。通过一个显示行中的像素驱动电路101共同连接电压控制电路110，可以简化显示区域100中像素驱动电路101的结构，降低显示区域100中像素驱动电路101的占用面积，从而使显示区域100设置更多的像素驱动电路101和发光器件102，实现高PPI显示。电压控制电路110在复位控制信号RE的控制下将初始化信号Vinit输出至驱动晶体管的第一极，控制对应的发光器件102复位，可以避免上一帧发光时加载于发光器件102上的电压对下一帧发光的影响，可以改善残影现象。
一种示例性实施例中，一个电压控制电路110可以连接同一显示行中两个相邻的子像素中的像素驱动电路101，或者可以连接同一显示行中三个或更多的子像素中的像素驱动电路101。
图6为一种示例性实施例提供的电压控制电路和像素驱动电路的电路实现的示意图。如图6所示，发光器件可以包括OLED。OLED的阳极与驱动晶体管M0的第二极D连接，OLED的阴极与第二电源信号VSS的输入端连接。
一种示例性实施例中，第二电源信号VSS的电压可以为负电压或接地电压V GND(一般为0V)。初始化信号Vinit的电压可以为接地电压V GND。
一种示例性实施例中，OLED可以是Micro-OLED或Mini-OLED，以有利于实现高PPI显示。
一种示例性实施例中，电压控制电路110与一显示行中的两个像素驱动电路101连接。像素驱动电路101包括驱动晶体管M0、第三晶体管M3、第四晶体管M4和存储电容Cst，电压控制电路110包括第一晶体管M1和第二晶体管M2。驱动晶体管M0、第一晶体管M1、第二晶体管M2、第三晶体管M3、第四晶体管M4均是制备在衬底基板中的晶体管。
第一晶体管M1的控制极与复位控制信号RE的输入端连接，被配置为接收复位控制信号RE，第一晶体管M1的第一极与初始化信号Vinit的输入端连接，被配置为接收初始化信号Vinit，第一晶体管M1的第二极分别与对应的驱动晶体管M0的第一极S和第二晶体管M2的第二极连接。第二晶体管M2的控制极与发光控制信号EM的输入端连接，被配置为接收发光控制信号EM，第二晶体管M2的第一极与第一电源信号VDD的输入端连接，被配置为接收第一电源信号VDD，第二晶体管M2的第二极分别与对应的驱动晶体管M0的第一极S和第一晶体管M1的第二极连接。在示例性实施方式中，第一晶体管M1与第二晶体管M2的类型可以不同，例如，第一晶体管M1为N型晶体管，第二晶体管M2为P型晶体管，或者，第一晶体管M1为P型晶体管，第二晶体管M2为N型晶体管。
在一种示例性实施例中，第一晶体管M1与第二晶体管M2的类型可以相同，可以根据实际应用环境来设计确定。
像素驱动电路101包括驱动晶体管M0、第三晶体管M3、第四晶体管M4和存储电容Cst。驱动晶体管M0的控制极G，驱动晶体管M0的第一极S与第一晶体管M1的第二极和第二晶体管M2的第二极连接，驱动晶体管M0的第二极D与OLED的阳极连接。第三晶体管M3的控制极与第一控制极扫描信号S1的输入端连接，被配置为接收第一控制极扫描信号S1，第三晶体管M3的第一极与数据信号DA的输入端连接，被配置为接收数据信号DA，第三晶体管M3的第二极与驱动晶体管M0的控制极G连接。第四晶体管M4的控制极与第二控制极扫描信号S2的输入端连接，被配置为接收第二控制极扫描信号S2，第四晶体管M4的第一极与数据信号DA的输入端连接，被配置为接收数据信号DA，第四晶体管M4的第二极与驱动晶体管M0的控制极G连接。存储电容Cst的第一端与驱动晶体管M0的控制极G连接，存储电容Cst的第二端与接地端GND连接。在示例性实施方式中，驱动晶体管M0可以为N型晶体管，第三晶体管M3与第四晶体管M4的类型可以不同，例如，第三晶体管M3为N型晶体管，第四晶体管M4为P型晶体管。当数据信号DA的电压为高灰阶对应的电压时，通过P型的第四晶体管M4导通以将数据信号DA传输给驱动晶体管M0的控制极G，可以避免数据信号DA 的电压受例如N型的第三晶体管M3的阈值电压的影响。当数据信号DA的电压为低灰阶对应的电压时，通过N型的第三晶体管M3导通以将数据信号DA传输给驱动晶体管M0的控制极G，可以避免数据信号DA的电压受P型的第四晶体管M4的阈值电压的影响。这样，可以提高输入到驱动晶体管M0的控制极G上的电压范围。
在一种示例性实施例中，第三晶体管M3与第四晶体管M4的类型可以是，第三晶体管M3为P型晶体管，第四晶体管M4为N型晶体管。
在一种示例性实施例中，像素驱动电路可以是3T1C、5T1C或7T1C电路结构，或可以是具有内部补偿或外部补偿功能的电路结构。
在一种示例性实施例中，如图1至3所示，驱动结构层覆盖整个显示区域100和外围区域200。
第一绝缘层12和第二绝缘层15覆盖整个显示区域和至少部分外围区域。在一种示例性实施例中，如图1至3所示，第一绝缘层12和第二绝缘层15覆盖整个显示区域100和外围区域200。
在一种示例性实施例中，第一导电柱13和第二导电柱16位于显示区域100和外围区域200。
在一种示例性实施例中，第一绝缘层12上设置有暴露出部分漏电极的过孔，第一导电柱13设置在第一绝缘层12的过孔中。反射电极14通过第一导电柱13与漏电极连接。第二绝缘层15上设置有暴露出反射电极14的过孔，第二导电柱16设置在第二绝缘层15的过孔中。
在一种示例性实施例中，如图1至3所示，显示基板还可以包括：封装层40。封装层40位于发光结构层20和彩膜层30之间。
封装层40可以包括：第一无机封装层41、第二无机封装层42和第三有机封装层43。第一无机封装层41位于第二无机封装层42靠近衬底基板10的一侧；第三有机封装层43位于第二无机封装层42远离衬底基板10的一侧。
在一种示例性实施例中，彩膜层30位于显示区域100。
在一种示例性实施例中，封装层40覆盖整个显示区域100和至少部分外围区域200。在一种示例性实施例中，如图1至3所示，封装层40覆盖整个 显示区域100和整个外围区域200。封装层40被配置为隔绝水氧，以保护发光结构层。
在一种示例性实施例中，第一无机封装层41的制作材料可以包括：氮化硅。第一无机封装层41可以避免在制作第二无机封装层42时对发光结构层造成损伤。由于第一无机封装层41具有无机特性，因而不仅具有良好的封装特性，而且具有良好的与第二电极的粘附性，可以保证封装层的封装效果。
在一种示例性实施例中，第二无机封装层42的制作材料可以包括：氧化硅。第二无机封装层可以阻隔水氧进入到发光结构层中，可以延长发光结构层的使用寿命。
在一种示例性实施例中，第二无机封装层42的厚度可以大于第一无机封装层41的厚度。
在一种示例性实施例中，第三有机封装层43的制作材料可以包括：聚对二甲苯。由于第三有机封装层43具有有机特性，不仅具有较佳的有机封装特性，而且具有较好的粒子包覆能力，可以很好的包覆膜层上的粒子，防止刺穿膜层。此外，具有有机特性的材料可以很好的释放无机层之间的应力，防止膜层由于应力较大产生微裂纹或剥落等缺陷。第三有机封装层43还具有较好的平坦特性，可以为后续的彩膜层制作提供较平坦的衬底基板，防止彩膜层制程对第二无机封装层产生损伤。
在一种示例性实施例中，第三有机封装层43的厚度为4500纳米至5500纳米。
在一种示例性实施例中，第一无机封装层41和第二无机封装层42采用沉积工艺形成。第一无机封装层41的沉积密度可以小于第二无机封装层42的沉积密度。
在一种示例性实施例中，如图1和2所示，功能层50可以为单层结构，且为面状结构。功能层50位于第一无机封装层41和第二无机封装层42之间，或者，位于第二无机封装层42和第三有机封装层43之间。图1是以功能层50位于第一无机封装层41和第二无机封装层42之间为例进行说明的，图2是以功能层50位于第二无机封装层42和第三有机封装层43之间为例进行说明的。
在一种示例性实施例中，功能层50位于整个显示区域100中。
在一种示例性实施例中，功能层50为透明膜层；透明膜层50的透光率高于76％。
在一种示例性实施例中，功能层50的制作材料可以包括：掺杂有增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线。其中，功能层50可以屏蔽99.8％以上的紫外光，可以阻挡99.8％以上制作彩膜层30所采用的紫外光射入有机发光层22中，有效地减小制作彩膜层的采用的紫外光对有机发光层的不利影响。
当功能层50的制作材料为掺杂有增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯时，功能层50的力学性能比较优，且由于功能层中掺杂有紫外光吸收剂，可以有效地吸收紫外光。
当功能层50的制作材料为二氧化钛纳米线时，由于二氧化钛纳米线中二氧化钛的粒径达到了纳米级，可以有效的散射和吸收紫外线。当紫外光以电磁波的形式作用与纳米粒子时，由于纳米粒子的尺寸小于紫外线的波长，二氧化钛纳米线中的电子以入射紫外光波的频率被迫振动，成为电磁波的二次传播源，形成对紫外线的散射。二氧化钛纳米线同样力学性能优异，随着尺寸的减小，二氧化钛纳米线会体现更好的机械性能，可以使功能层的韧性变好。
在一种示例性实施例中，由于功能层50的力学性能较优，拥有较好的塑形和韧性，功能层50位于第一无机封装层41和第二无机封装层42之间，或者，位于第二无机封装层42和第三有机封装层43之间，可以缓解第一无机封装层41和第二无机封装层42上的应力，使得第一无机封装层41和第二无机封装层42上的应力得到释放，避免无机层应力过大而出现爆膜或者断裂。
在一种示例性实施例中，如图3所示，功能层50可以为多层结构。功能层50包括：第一功能层51和第二功能层52。第一功能层51位于第一无机封装层41和第二无机封装层42之间，第二功能层52位于第二无机封装层42和第三有机封装层43之间。
在一种示例性实施例中，第一功能层51为透明膜层。透明膜层的透光率高于76％。
在一种示例性实施例中，第一功能层的制作材料包括：掺杂增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线。第一功能层可以阻挡99.8％以上制作彩膜层30所采用的紫外光射入有机发光层22中，有效地减小制作彩膜层的采用的紫外光对有机发光层的不利影响。
在一种示例性实施例中，第二功能层52为透明膜层。透明膜层的透光率高于76％。
在一种示例性实施例中，第二功能层的制作材料可以包括：掺杂增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线。第二功能层可以阻挡99.8％以上制作彩膜层30所采用的紫外光射入有机发光层22中，有效地减小制作彩膜层的采用的紫外光对有机发光层的不利影响。
在一种示例性实施例中，第一功能层的制作材料可以与第二功能层的制作材料可以相同，或者可以不同。
在一种示例性实施例中，第一功能层可以为面状结构或者网格状结构。
在一种示例性实施例中，第二功能层可以为面状结构或者网格状结构。
在一种示例性实施例中，图7A为一种示例性实施例中的第一功能层的俯视图，图7B为一种示例性实施例中的第二功能层的俯视图。如图7A是以第一功能层为网格状结构为例进行说明的，图7B是以第二功能层为网格状结构为例进行说明的。如图7A和图7B所示，第一功能层51和第二功能层52可以为网格状结构。第一功能层包括：第一走线510以及由第一走线510围绕而成的多个第一开口区域511；第二功能层包括：第二走线520以及由第二走线520围绕而成的第二开口区域521。
在一种示例性实施例中，多个第一开口区域阵列排布，多个第二开口区域阵列排布。
在一种示例性实施例中，相邻行的第一开口区域可以交错设置，多个第二开口区域可以交错设置。
在一种示例性实施例中，多个第一开口区域在衬底基板上的正投影与多个第二开口区域在衬底基板上的正投影不存在重叠区域，可以避免紫外光射入有机发光层。
在一种示例性实施例中，网格状结构的第一功能层和第二功能层可以使得第一无机封装层和第二无机封装层的应力更加分散，可以更好地释放第一无机封装层和第二无机封装层的应力，防止无机层应力过大而出现爆膜或者断裂，可以提高显示基板的可靠性和信赖性。
由于彩膜层中相邻滤光片之间存在重叠区域，使得每个子像素向内收缩，导致与相邻滤光片的重叠部分在衬底基板上正投影重合的第一无机封装层和第二无机封装层的局部的应力较大。在一种示例性实施例中，像素定义层在衬底基板上的正投影覆盖第一走线或第二走线在衬底基板上的正投影；第一走线或第二走线在衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠，第一走线或第二走线的设置方式可以缓解与相邻滤光片的重叠部分在衬底基板上正投影重合的第一无机封装层和第二无机封装层的局部的应力，更好地释放第一无机封装层和第二无机封装层的应力，防止无机层应力过大而出现爆膜或者断裂，可以提高显示基板的可靠性和信赖性。
在一种示例性实施例中，第一功能层可以为网格状结构，第二功能层可以为面状结构。第一功能层包括：第一走线以及由第一走线围绕而成的多个第一开口区域；像素定义层在衬底基板上的正投影覆盖第一走线在衬底基板上的正投影；第一走线在衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。此时，第一功能层为网格状结构，可以使得第一无机封装层和第二无机封装层的应力更加分散，可以更好地释放第一无机封装层和第二无机封装层的应力，防止无机层应力过大而出现爆膜或者断裂，可以提高显示基板的可靠性和信赖性。
在一种示例性实施例中，第一功能层可以为面状结构，第二功能层可以为网格状结构。第二功能层包括：第二走线以及由第二走线围绕而成的第二开口区域；像素定义层在衬底基板上的正投影覆盖第二走线在衬底基板上的正投影；第二走线在衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。此时，第二功能层为网格状结构，可以使得第二无机封装层的应力更加分散，可以更好地释放第二无机封装层的应力，防止无机层应力过大而出现爆膜或者断裂，可以提高显示基板的可靠性和信赖性。
在一种示例性实施例中，第一功能层和第二功能层可以为面状结构。
在一种示例性实施例中，第一开口区域511的截面形状包括：多边形、圆形或者椭圆形，多边形包括：方形或者棱形。如图7A是以第一开口区域的截面形状为方形为例进行说明的。
在一种示例性实施例中，第二开口区域521的截面形状包括：多边形、圆形或者椭圆形，多边形包括：方形或者棱形。如图7B是以第二开口区域的截面形状为方形为例进行说明的。
在一种示例性实施例中，第一开口区域的截面形状与第二开口区域的截面形状可以相同，或者可以不同，图7A和图7B是以第一开口区域的截面形状与第二开口区域的截面形状相同为例进行说明的。
在一种示例性实施例中，如图1至3所示，显示基板还包括：显示基板还可以包括：平坦层60、贴合层70和盖板80。平坦层60位于彩膜层30远离衬底基板10的一侧；贴合层70位于平坦层60远离衬底基板10的一侧，盖板80位于贴合层70远离衬底基板10的一侧。
在一种示例性实施例中，平坦层60和贴合层70覆盖整个显示区域100和整个外围区域200。盖板80的边界位于绑定区域300。
在一种示例性实施例中，平坦层60的制作材料可以包括：聚对二甲苯。
在一种示例性实施例中，贴合层70的制作材料可以包括：二氧化硅。采用无机材料制作的贴合层可以更好地与盖板贴合。
在一种示例性实施例中，盖板80可以为玻璃盖板。
在一种示例性实施例中，如图1至3所示，显示基板还可以包括：封框胶90。盖板80通过封框胶90与衬底基板10固定。
在一种示例性实施例中，封框胶90可以设置于衬底基板10与盖板80之间，可以为阻隔水氧入侵提供保障，使硅基OLED显示基板寿命大幅提升。在另一示例性实施方式中，封框胶可以设置于盖板的侧面，盖板的四周侧面与衬底基板之间通过封框胶密封，封框胶远离衬底基板一侧的端面位于盖板邻近衬底基板一侧的表面与盖板远离衬底基板一侧的表面之间，由此既可以确保密封效果，又可以防止封框胶高出盖板导致显示基板的厚度增加。
在一种示例性实施例中，如图1至3所示，外围区域200可以包括：供 电电极201、辅助电极202、连接电极203和第二电极23。辅助电极202通过第一导电柱与供电电极201连接，连接电极203通过第二导电柱与辅助电极202连接。连接电极203与第二电极23直接搭接，即连接电极203与第二电极23之间直接接触，不存在其他膜层。
在一种示例性实施例中，供电电极201与位于显示区域中的驱动结构层中晶体管的源漏电极同层设置，且采用同一制程形成。辅助电极202与位于显示区域中的驱动结构层中的反射电极14同层设置，且采用同一制程形成。连接电极203与位于显示区域中的第一电极21同层设置，且采用同一制程形成。
在一种示例性实施例中，第二电极23可以通过过孔与连接电极203连接，这样连接电极203和辅助电极202形成第二电极23与供电电极201之间的导电通道。供电电极201提供的电压信号通过该导电通道传输到第二电极23。导电通道称为阴极环结构。
在一种示例性实施例中，阴极环为位于外围区域的环状结构，是包围显示区域的导电通道，可以实现为第二电极供电。
在一种示例性实施例中，如图1至3所示，绑定区域300可以包括：绑定电极301和绑定焊盘302。
在一种示例性实施例中，位于绑定区域300中的绑定电极301与位于显示区域中的晶体管的源漏电极同层设置，且采用同一制程形成。
图8为本公开实施例提供的显示基板的制作方法的流程图。如图8所示，本公开实施例还提供一种显示基板的制作方法，设置为制作显示基板，本公开实施例提供的显示基板的制作方法包括以下步骤：
步骤S100、提供一衬底基板。
步骤S200、在衬底基板上形成像素定义层和发光结构层。
步骤S300、在发光结构层上依次形成功能层和彩膜层。
彩膜层包括：多个滤光片；相邻滤光片在衬底基板上的正投影部分重叠，像素定义层在衬底基板上的正投影覆盖相邻滤光片的重叠部分在衬底基板上的正投影；功能层位于发光结构层和彩膜层之间，且在衬底基板上的正投影 与相邻滤光片的重叠部分至少部分重叠。
在一种示例性实施例中，显示基板包括：显示区域、外围区域和绑定区域。
本公开实施例提供的显示基板的制作方法设置为制作前述任一个实施例提供的显示基板，实现原理和实现效果类似，在此不再赘述。
在一种示例性实施例中，发光结构层包括：第一电极，有机发光层和第二电极。步骤S2包括：在衬底基板上形成驱动结构层；在驱动结构层上形成第一电极；在形成有第一电极的驱动结构层上依次形成像素定义层、有机发光层和第二电极，以形成发光结构层。
在一种示例性实施例中，功能层为单层结构。步骤S3包括：在发光结构层上采用化学气相沉积工艺形成第一无机封装层；在第一无机封装层上形成功能层；在功能层上采用原子层沉积工艺形成第二无机封装层；在第二无机封装层上采用分子层沉积工艺形成第三有机封装层；在第三有机封装层上形成彩膜层。
在另一种示例性实施例中，功能层为单层结构。步骤S3包括：在发光结构层上采用化学气相沉积工艺形成第一无机封装层；在第一无机封装层上采用原子层沉积工艺形成第二无机封装层；在第二无机封装层上形成功能层；在功能层上采用分子层沉积工艺形成第三有机封装层；在第三有机封装层上形成彩膜层。
在一种示例性实施例中，功能层为多层结构。功能层包括：第一功能层和第二功能层；步骤S3包括：在发光结构层上采用化学气相沉积工艺形成第一无机封装层；在第一无机封装层上形成第一功能层；在第一功能层上采用原子层沉积工艺形成第二无机封装层；在第二无机封装层上形成第二功能层；在第二功能层上采用分子层沉积工艺形成第三有机封装层；在第三有机封装层上形成彩膜层。
在一种示例性实施例中，步骤S3之后，显示基板的制作方法还可以包括：在彩膜层上依次形成平坦层、贴合层和盖板。
下面以功能层为多层结构为例结合图9至图17说明一种示例性实施例提 供的显示基板的制作方法。
步骤S1、提供一衬底基板10，衬底基板10上设置有位于显示区域100的晶体管11、位于外围区域200的供电电极201以及位于绑定区域300的绑定电极301，如图9所示。
步骤S2、在衬底基板10上形成第一绝缘层12；在第一绝缘层12的过孔中形成第一导电柱13；在第一绝缘层12上形成位于显示区域100的反射电极14以及位于外围区域200的辅助电极202；在形成有反射电极14和辅助电极202的第一绝缘层12上形成第二绝缘层15；在第二绝缘层15的过孔中形成第二导电柱16，以形成驱动结构层，如图10所示。
步骤S3、在驱动结构层上形成位于显示区域100的第一电极21、位于外围区域的连接电极203，在形成有第一电极21的驱动结构层上形成像素定义层24，在形成有像素定义层24的驱动结构层上依次形成位于显示区域100的有机发光层22和位于显示区域100和外围区域200的第二电极23，如图11所示。
步骤S4、在第二电极23上采用化学气相沉积工艺形成覆盖整个显示区域100和整个外围区域200的第一无机封装层41，如图12所示。
步骤S5、在第一无机封装层41上形成覆盖整个显示区域100的第一功能层51，如图13所示。
步骤S6、在第一功能层51上采用原子层沉积工艺形成覆盖整个显示区域100和整个外围区域200的第二无机封装层42，如图14所示。
步骤S7、在第二无机封装层42上形成覆盖整个显示区域100的第二功能层52，如图15所示。
步骤S8、在第二功能层52上采用分子层沉积工艺形成覆盖整个显示区域100和整个外围区域200的第三有机封装层43，如图16所示。
步骤S9、在第三有机封装层43上形成彩膜层30，如图17所示。
步骤S10、在彩膜层30上形成平坦层60、贴合层70和盖板80，并在盖板80与衬底基板10之间填充封框胶90，如图3所示。
本公开实施例还提供一种显示装置，包括：显示基板。
在一种示例性实施例中，显示装置包括：VR设备或者AR设备。
显示基板为前述任一个实施例提供的显示基板，实现原理和实现效果类似，在此不再赘述。
本公开中的附图只涉及本公开实施例涉及到的结构，其他结构可参考通常设计。
为了清晰起见，在用于描述本公开的实施例的附图中，层或微结构的厚度和尺寸被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
虽然本公开所揭露的实施方式如上，但所述的内容仅为便于理解本公开而采用的实施方式，并非用以限定本公开。任何本公开所属领域内的技术人员，在不脱离本公开所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本公开的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (15)

  1. 一种显示基板，包括：衬底基板以及设置在所述衬底基板上的像素定义层、发光结构层、功能层和彩膜层；
    所述彩膜层包括：多个滤光片；相邻滤光片在所述衬底基板上的正投影部分重叠，所述像素定义层在衬底基板上的正投影覆盖所述相邻滤光片的重叠部分在衬底基板上的正投影；
    所述功能层位于所述发光结构层和所述彩膜层之间，且在所述衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。
  2. 根据权利要求1所述的显示基板，其中，所述显示基板还包括：位于所述发光结构层和所述彩膜层之间的封装层；
    所述封装层包括：第一无机封装层、第二无机封装层和第三有机封装层；
    所述第一无机封装层位于所述第二无机封装层靠近所述衬底基板的一侧；
    所述第三有机封装层位于所述第二无机封装层远离所述衬底基板的一侧；
    所述第一无机封装层的制作材料包括：氮化硅；所述第二无机封装层的制作材料包括：氧化硅；所述第三有机封装层的制作材料包括：聚对二甲苯；所述第三有机封装层的厚度为4500纳米至5500纳米。
  3. 根据权利要求2所述的显示基板，其中，所述功能层为单层结构，且为面状结构；
    所述功能层位于所述第一无机封装层和所述第二无机封装层之间，或者，位于所述第二无机封装层和所述第三有机封装层之间；
    所述功能层为透明膜层；
    所述功能层的制作材料包括：掺杂有增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线。
  4. 根据权利要求2所述的显示基板，其中，所述功能层为多层结构，所述功能层包括：第一功能层和第二功能层；
    所述第一功能层位于所述第一无机封装层和所述第二无机封装层之间，所述第二功能层位于所述第二无机封装层和所述第三有机封装层之间；
    所述第一功能层和所述第二功能层均为透明膜层；
    所述第一功能层的制作材料包括：掺杂增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线；
    所述第二功能层的制作材料包括：掺杂增塑剂、稳定剂和紫外光吸收剂的聚氯乙烯或者二氧化钛纳米线。
  5. 根据权利要求4所述的显示基板，其中，所述第一功能层和所述第二功能层为网格状结构；
    所述第一功能层包括：第一走线以及由所述第一走线围绕而成的多个第一开口区域；所述第二功能层包括：第二走线以及由所述第二走线围绕而成的多个第二开口区域；
    所述多个第一开口区域在衬底基板上的正投影与所述多个第二开口区域在衬底基板上的正投影不存在重叠区域。
  6. 根据权利要求5所述的显示基板，其中，所述像素定义层在衬底基板上的正投影覆盖所述第一走线或所述第二走线在衬底基板上的正投影；
    所述第一走线或所述第二走线在衬底基板上的正投影与所述相邻滤光片的重叠部分至少部分重叠。
  7. 根据权利要求4所述的显示基板，其中，所述第一功能层为网格状结构，所述第二功能层为面状结构；
    所述第一功能层包括：第一走线以及由所述第一走线围绕而成的多个第一开口区域；所述像素定义层在衬底基板上的正投影覆盖所述第一走线在衬底基板上的正投影；所述第一走线在衬底基板上的正投影与所述相邻滤光片的重叠部分至少部分重叠；
    或者，所述第一功能层为面状结构，所述第二功能层为网格状结构；
    所述第二功能层包括：第二走线以及由所述第二走线围绕而成的第二开口区域；所述像素定义层在衬底基板上的正投影覆盖所述第二走线在衬底基板上的正投影；所述第二走线在衬底基板上的正投影与所述相邻滤光片的重叠部分至少部分重叠；
    或者，所述第一功能层和所述第二功能层为面状结构。
  8. 根据权利要求5至7任一项所述的显示基板，其中，所述第一开口区域的截面形状包括：多边形、圆形或者椭圆形；
    所述第二开口区域的截面形状包括：多边形、圆形或者椭圆形。
  9. 根据权利要求2所述的显示基板，其中，所述第一无机封装层和所述第二无机封装层采用沉积工艺形成；所述第一无机封装层的沉积密度小于所述第二无机封装层的沉积密度。
  10. 根据权利要求2所述的显示基板，其中，所述显示基板还包括：驱动结构层、平坦层、贴合层和盖板；
    所述驱动结构层位于所述发光结构层靠近所述衬底基板的一侧，所述驱动结构层与所述发光结构层连接；
    所述平坦层位于所述彩膜层远离所述衬底基板的一侧；所述平坦层的制作材料包括：聚对二甲苯；
    所述贴合层位于所述平坦层远离所述衬底基板的一侧，所述贴合层的制作材料包括：二氧化硅；
    所述盖板位于所述贴合层远离所述衬底基板的一侧。
  11. 一种显示装置，包括：如权利要求1至10任一项所述的显示基板。
  12. 一种显示基板的制作方法，设置为制作如权利要求1至10任一项所述的显示基板，所述方法包括：
    提供一衬底基板；
    在所述衬底基板上形成像素定义层和发光结构层；
    在所述发光结构层上依次形成功能层和彩膜层；所述彩膜层包括：多个滤光片；相邻滤光片在所述衬底基板上的正投影部分重叠，所述像素定义层在衬底基板上的正投影覆盖所述相邻滤光片的重叠部分在衬底基板上的正投影；
    所述功能层位于所述发光结构层和所述彩膜层之间，且在所述衬底基板上的正投影与相邻滤光片的重叠部分至少部分重叠。
  13. 根据权利要求12所述的方法，其中，所述功能层为单层结构，所述 在所述发光结构层上依次形成功能层和彩膜层包括：
    在所述发光结构层上采用化学气相沉积工艺形成第一无机封装层；
    在第一无机封装层上形成功能层；
    在功能层上采用原子层沉积工艺形成第二无机封装层；
    在第二无机封装层上采用分子层沉积工艺形成第三有机封装层；
    在第三有机封装层上形成彩膜层；
    或者，
    在所述发光结构层上采用化学气相沉积工艺形成第一无机封装层；
    在第一无机封装层上采用原子层沉积工艺形成第二无机封装层；
    在第二无机封装层上形成功能层；
    在功能层上采用分子层沉积工艺形成第三有机封装层；
    在第三有机封装层上形成彩膜层。
  14. 根据权利要求12所述的方法，其中，所述功能层为多层结构，所述功能层包括：第一功能层和第二功能层；
    所述在所述发光结构层上依次形成功能层和彩膜层包括：
    在所述发光结构层上采用化学气相沉积工艺形成第一无机封装层；
    在第一无机封装层上形成第一功能层；
    在第一功能层上采用原子层沉积工艺形成第二无机封装层；
    在第二无机封装层上形成第二功能层；
    在第二功能层上采用分子层沉积工艺形成第三有机封装层；
    在第三有机封装层上形成彩膜层。
  15. 根据权利要求12所述的方法，其中，所述发光结构层包括：第一电极，有机发光层和第二电极，所述在所述衬底基板上形成像素定义层和发光结构层包括：
    在所述衬底基板上形成驱动结构层；
    在所述驱动结构层上形成第一电极；
    在形成有第一电极的驱动结构层上依次形成像素定义层、有机发光层和第二电极，以形成发光结构层；
    所述在所述发光结构层上依次形成功能层和彩膜层之后，所述方法还包括：
    在所述彩膜层上依次形成平坦层、贴合层和盖板。
PCT/CN2021/086509 2020-05-21 2021-04-12 显示基板及其制作方法、显示装置 WO2021233002A1 (zh)

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