WO2021180247A1 - 硅棒的切割方法 - Google Patents

硅棒的切割方法 Download PDF

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WO2021180247A1
WO2021180247A1 PCT/CN2021/086423 CN2021086423W WO2021180247A1 WO 2021180247 A1 WO2021180247 A1 WO 2021180247A1 CN 2021086423 W CN2021086423 W CN 2021086423W WO 2021180247 A1 WO2021180247 A1 WO 2021180247A1
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silicon
rod
single crystal
cutting
silicon wafer
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PCT/CN2021/086423
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English (en)
French (fr)
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符黎明
孟祥熙
曹育红
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常州时创能源股份有限公司
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Publication of WO2021180247A1 publication Critical patent/WO2021180247A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor

Definitions

  • the invention relates to the field of photovoltaics, in particular to a method for cutting silicon rods.
  • Monocrystalline silicon wafers are cut from monocrystalline silicon rods.
  • the monocrystalline silicon rods with 100 crystal orientations are prepared first.
  • the head and tail ends of the silicon rod are cut off, and then the remaining sections of the silicon rod are cut to obtain squares.
  • the quasi-square rod or square rod whose length direction is parallel to the axis of the silicon rod; then align the square rod or the square rod for slicing, the slicing direction is perpendicular to the length direction of the quasi-square rod or the square rod, and the sliced silicon wafer has a 100 crystal orientation Of monocrystalline silicon wafers.
  • the existing single crystal silicon rod cutting method can only produce 100 crystal orientation single crystal silicon wafers.
  • the development of solar cell technology there is also a demand for non-100 crystal orientation monocrystalline silicon wafers. Therefore, it is necessary to improve the existing single crystal silicon rod cutting method to prepare non-100 crystal orientation monocrystalline silicon wafers.
  • the purpose of the present invention is to provide a method for cutting silicon rods, which can prepare monocrystalline silicon wafers with non-100 crystal orientations.
  • the present invention provides a silicon rod cutting method, which cuts the silicon rod into silicon wafers, including a slicing step; the silicon rod is a single crystal silicon rod with 100 crystal orientations; the slicing direction is aligned with the axis of the silicon rod There is an included angle of non-90 degrees, and the sliced silicon wafer is a single crystal silicon wafer with a non-100 crystal orientation.
  • the head and tail ends of the silicon rod are cut off, and the remaining sections of the silicon rod are cut into squares to obtain a quasi-square rod or a square rod whose length is parallel to the axis of the silicon rod; then align the square rod or the square rod for slicing , There is a non-90 degree angle between the slicing direction and the length direction of the quasi-square rod or the square rod, and the sliced silicon wafer is the first single crystal silicon wafer with a non-100 crystal orientation.
  • the cutting of the remaining sections of the silicon rod produces edge leather;
  • the edge leather includes: a rectangular cut surface formed by the square cut, an arc surface opposite to the cut surface, and two ends of the cut surface in the longitudinal direction.
  • a pair of end surfaces take the cutting surface as the reference surface; take the junction of the cutting surface and the arc surface as the sharp corner; take the arc surface between the sharp corners on both sides of the edge leather as the arc convex portion;
  • the silicon block is sliced, and there is an included angle of non-90 degrees between the slice direction and the reference plane, and the sliced silicon slice is a second single crystal silicon slice with a non-100 crystal orientation.
  • the slice direction and the length direction of the quasi-square rod or the square rod have an angle of 5 to 85 degrees.
  • an angle between the slice direction and the reference plane is 5 to 85 degrees.
  • the first single crystal silicon wafer is a single crystal silicon wafer with a 110 crystal orientation or a 111 crystal orientation.
  • the second single crystal silicon wafer is a single crystal silicon wafer with a 110 crystal orientation or a 111 crystal orientation.
  • the advantages and beneficial effects of the present invention are that it provides a method for cutting silicon rods, which can prepare monocrystalline silicon wafers with non-100 crystal orientations.
  • the invention can cut the single crystal silicon rod into the first single crystal silicon wafer with a non-100 crystal orientation, mainly by adjusting the slicing direction of the quasi-square rod or the square rod, and has little modification to the existing single crystal silicon rod cutting method. Easy to promote.
  • the invention can also cut the edge leather material into the second single crystal silicon wafer with non-100 crystal orientation, which can improve the utilization rate of the single crystal silicon rod and increase the output of the non-100 crystal orientation single crystal silicon wafer.
  • Figure 1 is a schematic diagram of the edge leather.
  • the present invention provides a silicon rod cutting method, which cuts the silicon rod into silicon wafers, including a slicing step; the silicon rod is a single crystal silicon rod with a 100 crystal orientation; Included angle, the sliced silicon wafer is a non-100 crystal orientation single crystal silicon wafer.
  • a single crystal silicon wafer (the first single crystal silicon wafer may be a 110 crystal orientation single crystal silicon wafer, a 111 crystal orientation single crystal silicon wafer, or other non-100 crystal orientation single crystal silicon wafers).
  • the cutting of the remaining segments of the silicon rod produces a side leather material 1;
  • the side leather material 1 includes: a rectangular cut surface 11 formed by the cut square, and an arc surface 12 opposite to the cut surface 11, And a pair of end faces separately provided at both ends of the length direction of the cutting surface 11; the pair of end surfaces are perpendicular to the cutting surface 11; the cutting surface 11 is taken as the reference plane; the junction of the cutting surface 11 and the arc surface 12 is the sharp corner 2;
  • the part of the surface 12 between the sharp corners 2 on both sides of the edge leather 1 is an arc-shaped protrusion 3;
  • the wafer can be a single crystal silicon wafer with a 110 crystal orientation, a single crystal silicon wafer with a 111 crystal orientation, or other single crystal silicon wafers with a non-100 crystal orientation).

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

一种硅棒的切割方法，其将硅棒切割成硅片，包括切片步骤；该硅棒为100晶向的单晶硅棒；切片方向与硅棒轴心存在非90度的夹角，切片所得的硅片为非100晶向的单晶硅片。该方法调整了准方棒或方棒的切片方向，能将单晶硅棒切割出非100晶向的第一单晶硅片。该方法还能将边皮料切割出非100晶向的第二单晶硅片，可提高单晶硅棒的利用率。

Description

硅棒的切割方法 技术领域
本发明涉及光伏领域，具体涉及一种硅棒的切割方法。
 背景技术
单晶硅片由单晶硅棒切割而成，一般是先制备100晶向的单晶硅棒，切割时先将硅棒的头尾两端切除，再对硅棒剩余段进行切方，得到长度方向与硅棒轴心平行的准方棒或方棒；再对准方棒或方棒进行切片，切片方向与准方棒或方棒的长度方向垂直，切片所得的硅片为100晶向的单晶硅片。
由上可知，现有单晶硅棒的切割方法，只能制得100晶向的单晶硅片。而随着太阳能电池技术的发展，非100晶向的单晶硅片也有需求，故需要对现有单晶硅棒的切割方法进行改进，以制备非100晶向的单晶硅片。
 技术解决方案
本发明的目的在于提供一种硅棒的切割方法，其能制备非100晶向的单晶硅片。
为实现上述目的，本发明提供一种硅棒的切割方法，其将硅棒切割成硅片，包括切片步骤；所述硅棒为100晶向的单晶硅棒；切片方向与硅棒轴心存在非90度的夹角，切片所得的硅片为非100晶向的单晶硅片。
优选的，将硅棒的头尾两端切除，再对硅棒剩余段进行切方，得到长度方向与硅棒轴心平行的准方棒或方棒；再对准方棒或方棒进行切片，切片方向与准方棒或方棒的长度方向存在非90度的夹角，切片所得的硅片为非100晶向的第一单晶硅片。
优选的，所述对硅棒剩余段进行切方有产生边皮料；边皮料包括：切方所形成的长方形切割面，与切割面相背的弧面，以及分设于切割面长度方向两端的一对端面；以切割面为基准面；以切割面和弧面的结合部为尖角部；以弧面位于边皮料两侧尖角部之间的部分为弧形凸起部；
将边皮料两侧的尖角部切除，并将边皮料的弧形凸起部切除，得到长度方向与基准面长度方向一致的长方体状硅块；
对硅块进行切片，切片方向与基准面存在非90度的夹角，切片所得的硅片为非100晶向的第二单晶硅片。
优选的，第一单晶硅片切片时，切片方向与准方棒或方棒的长度方向存在5～85度的夹角。
优选的，第二单晶硅片切片时，切片方向与基准面存在5～85度的夹角。
优选的，所述第一单晶硅片为110晶向或111晶向的单晶硅片。
优选的，所述第二单晶硅片为110晶向或111晶向的单晶硅片。
 有益效果
本发明的优点和有益效果在于：提供一种硅棒的切割方法，其能制备非100晶向的单晶硅片。
本发明能将单晶硅棒切割出非100晶向的第一单晶硅片，主要是调整了准方棒或方棒的切片方向，对现有单晶硅棒切割方法的改动较小，易于推广。
本发明还能将边皮料切割出非100晶向的第二单晶硅片，可提高单晶硅棒的利用率，并提高非100晶向单晶硅片的产出。
 附图说明
图1是边皮料的示意图。
 本发明的最佳实施方式
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
本发明提供一种硅棒的切割方法，其将硅棒切割成硅片，包括切片步骤；所述硅棒为100晶向的单晶硅棒；切片方向与硅棒轴心存在非90度的夹角，切片所得的硅片为非100晶向的单晶硅片。
本发明的具体实施例如下：
选择100晶向的单晶硅棒，切割时先将硅棒的头尾两端切除，再对硅棒剩余段进行切方，得到长度方向与硅棒轴心平行的准方棒或方棒；再对准方棒或方棒进行切片，切片方向与准方棒或方棒的长度方向存在非90度（优选5～85度）的夹角，切片所得的硅片为非100晶向的第一单晶硅片（第一单晶硅片可以是110晶向的单晶硅片，也可以是111晶向的单晶硅片，还可以是其它非100晶向的单晶硅片）。
如图1所示，所述对硅棒剩余段进行切方有产生边皮料1；边皮料1包括：切方所形成的长方形切割面11，与切割面11相背的弧面12，以及分设于切割面11长度方向两端的一对端面；该对端面与切割面11垂直；以切割面11为基准面；以切割面11和弧面12的结合部为尖角部2；以弧面12位于边皮料1两侧尖角部2之间的部分为弧形凸起部3；
将边皮料1两侧的尖角部2切除，并将边皮料1的弧形凸起部3切除，得到长度方向与基准面长度方向一致的长方体状硅块4；对硅块4进行切片，切片方向与基准面11存在非90度且非0度（优选5～85度）的夹角，切片所得的硅片为非100晶向的第二单晶硅片（第二单晶硅片可以是110晶向的单晶硅片，也可以是111晶向的单晶硅片，还可以是其它非100晶向的单晶硅片）。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (7)

  1. 硅棒的切割方法，其将硅棒切割成硅片，包括切片步骤；所述硅棒为100晶向的单晶硅棒；其特征在于，切片方向与硅棒轴心存在非90度的夹角，切片所得的硅片为非100晶向的单晶硅片。
  2. 根据权利要求1所述的硅棒的切割方法，其特征在于，将硅棒的头尾两端切除，再对硅棒剩余段进行切方，得到长度方向与硅棒轴心平行的准方棒或方棒；再对准方棒或方棒进行切片，切片方向与准方棒或方棒的长度方向存在非90度的夹角，切片所得的硅片为非100晶向的第一单晶硅片。
  3. 根据权利要求2所述的硅棒的切割方法，其特征在于，所述对硅棒剩余段进行切方有产生边皮料；边皮料包括：切方所形成的长方形切割面，与切割面相背的弧面，以及分设于切割面长度方向两端的一对端面；以切割面为基准面；以切割面和弧面的结合部为尖角部；以弧面位于边皮料两侧尖角部之间的部分为弧形凸起部；
    将边皮料两侧的尖角部切除，并将边皮料的弧形凸起部切除，得到长度方向与基准面长度方向一致的长方体状硅块；
    对硅块进行切片，切片方向与基准面存在非90度的夹角，切片所得的硅片为非100晶向的第二单晶硅片。
  4. 根据权利要求2所述的硅棒的切割方法，其特征在于，第一单晶硅片切片时，切片方向与准方棒或方棒的长度方向存在5～85度的夹角。
  5. 根据权利要求3所述的硅棒的切割方法，其特征在于，第二单晶硅片切片时，切片方向与基准面存在5～85度的夹角。
  6. 根据权利要求2所述的硅棒的切割方法，其特征在于，所述第一单晶硅片为110晶向或111晶向的单晶硅片。
  7. 根据权利要求3所述的硅棒的切割方法，其特征在于，所述第二单晶硅片为110晶向或111晶向的单晶硅片。
PCT/CN2021/086423 2020-03-12 2021-04-12 硅棒的切割方法 WO2021180247A1 (zh)

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CN110625834A (zh) * 2019-11-01 2019-12-31 常州时创能源科技有限公司 晶硅边皮料的切割方法
CN111251483A (zh) * 2020-03-12 2020-06-09 常州时创能源股份有限公司 硅棒的切割方法
CN113815137A (zh) * 2021-07-30 2021-12-21 隆基绿能科技股份有限公司 一种硅棒加工方法
CN116277561B (zh) * 2023-05-18 2023-07-21 苏州晨晖智能设备有限公司 硅棒的开方方法

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