WO2021098228A1 - 一种四倒角小片电池的制备方法 - Google Patents

一种四倒角小片电池的制备方法 Download PDF

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WO2021098228A1
WO2021098228A1 PCT/CN2020/100654 CN2020100654W WO2021098228A1 WO 2021098228 A1 WO2021098228 A1 WO 2021098228A1 CN 2020100654 W CN2020100654 W CN 2020100654W WO 2021098228 A1 WO2021098228 A1 WO 2021098228A1
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chamfered
silicon
small
chip
preparing
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PCT/CN2020/100654
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English (en)
French (fr)
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方敏
常振宇
孟祥熙
任常瑞
许佳平
黄计军
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常州时创能源股份有限公司
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Publication of WO2021098228A1 publication Critical patent/WO2021098228A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of photovoltaics, in particular to a method for preparing a four-chamfered small-chip battery.
  • the existing small-chip batteries are generally cut from the prepared cell, for example, the cell (square or quasi-square) is cut into two equal parts. Or two or more rectangular small-cell batteries, because the cutting is performed along a straight track, the four corners of the existing small-cell batteries are often right angles, and only the quasi-square (four corners are chamfered) batteries are cut into two equal parts.
  • the obtained small-chip batteries have only two chamfers, and the other two corners of such small-chip batteries are still at right angles.
  • the purpose of the present invention is to provide a method for preparing four-chamfered small-chip batteries, which can prepare rectangular small-chip batteries with all four chamfered corners.
  • the technical solution of the present invention is to design a method for preparing a four-chamfered small-cell battery, which includes the following steps:
  • the silicon chip is made into a battery chip, that is, a small chip battery with four chamfers.
  • step 2) the four corners of the silicon wafer are chamfered by grinding the four corners of the silicon wafer.
  • the advantages and beneficial effects of the present invention are that it provides a method for preparing four chamfered small-chip batteries, which can prepare rectangular small-chip batteries with all four chamfered corners.
  • a method for preparing a four-chamfered small-chip battery includes the following steps:
  • the four corners of the silicon wafer are chamfered to obtain a rectangular silicon wafer with chamfered corners;
  • the chamfering of the silicon wafer includes: chamfered edges respectively connected to a pair of adjacent edges of the rectangular silicon wafer at both ends; the pair of adjacent edges are perpendicular to each other; the chamfered edges are straight lines;
  • the angle between the chamfered edge and one of the pair of adjacent edges is 100 to 170 degrees
  • the length of the chamfered side is 0.5-3mm
  • the silicon chip is made into a battery chip, that is, a small chip battery with four chamfers.
  • a method for preparing a four-chamfered small-chip battery includes the following steps:
  • the four corners of the silicon wafer are chamfered to obtain a rectangular silicon wafer with chamfered corners;
  • the chamfering of the silicon wafer includes: chamfered edges respectively connected at two ends to a pair of adjacent edges of the rectangular silicon wafer; the pair of adjacent edges are perpendicular to each other; the chamfered edges are arcs;
  • the length of the arc is 0.5-3mm
  • the silicon chip is made into a battery chip, that is, a small chip battery with four chamfers.
  • the arc is a circular arc
  • the radius of the arc is 0.5-3mm.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Secondary Cells (AREA)
  • Sealing Battery Cases Or Jackets (AREA)

Abstract

一种四倒角小片电池的制备方法，包括如下步骤：1）将可制备电池整片的硅材切割出用于制备小片电池的长方体状硅块；该硅块包括一对相背设置的端面；2）沿与端面相平行的方向对硅块进行切片，得到矩形硅片；3）使硅片的四个角形成倒角，得到四角为倒角的矩形硅片；4）将硅片制成电池片，即得四倒角小片电池。该方法能制备出四个角都是倒角的矩形小片电池。

Description

一种四倒角小片电池的制备方法 技术领域
本发明涉及光伏领域，具体涉及一种四倒角小片电池的制备方法。
 技术问题
随着太阳能电池技术的发展，出现了小片电池，现有小片电池一般都是由制备完成的电池整片切割而成，如将电池整片（方片或准方片）等分切割成两个或两个以上的矩形小片电池，由于切割沿直线轨迹进行，故现有小片电池的四角常为直角，只有将准方片（四个角为倒角）的电池整片等分切割成两个小片电池，得到的小片电池才具有两个倒角，且这样的小片电池的另外两个角也还是直角。
小片电池的直角容易带来以下问题：
1）小片电池的传输过程，小片电池的直角和设备居中夹片器等传输结构剐蹭时摩擦力较大，会导致小片电池传输不到位；
2）小片电池的直角，增加了小片电池隐裂和碎片的概率。
如果能将小片电池的四个角都制成倒角，则可避免或减轻上述问题，故需要设计一种能制备四倒角小片电池的方法。
 技术解决方案
本发明的目的在于提供一种四倒角小片电池的制备方法，其能制备出四个角都是倒角的矩形小片电池。
为实现上述目的，本发明的技术方案是设计一种四倒角小片电池的制备方法，包括如下步骤：
1）将可制备电池整片的硅材切割出用于制备小片电池的长方体状硅块；该硅块包括一对相背设置的端面；
2）沿与端面相平行的方向对硅块进行切片，得到矩形硅片；
3）使硅片的四个角形成倒角，得到四角为倒角的矩形硅片；
4）将硅片制成电池片，即得四倒角小片电池。
优选的，步骤2）中，通过对硅片的四个角进行打磨，使硅片的四个角形成倒角。
 有益效果
本发明的优点和有益效果在于：提供一种四倒角小片电池的制备方法，其能制备出四个角都是倒角的矩形小片电池。
 本发明的最佳实施方式
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
实施例1
一种四倒角小片电池的制备方法，包括如下步骤：
1）将可制备电池整片的硅材切割出用于制备小片电池的长方体状硅块；该硅块包括一对相背设置的端面；
2）沿与端面相平行的方向对硅块进行切片，得到矩形硅片；
3）通过对硅片的四个角进行打磨，使硅片的四个角形成倒角，得到四角为倒角的矩形硅片；
所述硅片的倒角包括：两端与矩形硅片的一对相邻边线分别连接的倒角边；该对相邻边线相互垂直；所述倒角边为直线；
所述倒角边与上述一对相邻边线中一个边线的夹角为100～170度；
所述倒角边的长度为0.5～3mm；
4）将硅片制成电池片，即得四倒角小片电池。
实施例2
一种四倒角小片电池的制备方法，包括如下步骤：
1）将可制备电池整片的硅材切割出用于制备小片电池的长方体状硅块；该硅块包括一对相背设置的端面；
2）沿与端面相平行的方向对硅块进行切片，得到矩形硅片；
3）通过对硅片的四个角进行打磨，使硅片的四个角形成倒角，得到四角为倒角的矩形硅片；
所述硅片的倒角包括：两端与矩形硅片的一对相邻边线分别连接的倒角边；该对相邻边线相互垂直；所述倒角边为弧线；
所述弧线的长度为0.5～3mm；
4）将硅片制成电池片，即得四倒角小片电池。
实施例3
在实施例2的基础上，区别在于：
所述弧线为圆弧线；
所述圆弧线的半径为0.5～3mm。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (9)

  1. 一种四倒角小片电池的制备方法，其特征在于，包括如下步骤：
    1）将可制备电池整片的硅材切割出用于制备小片电池的长方体状硅块；该硅块包括一对相背设置的端面；
    2）沿与端面相平行的方向对硅块进行切片，得到矩形硅片；
    3）使硅片的四个角形成倒角，得到四角为倒角的矩形硅片；
    4）将硅片制成电池片，即得四倒角小片电池。
  2. 根据权利要求1所述的四倒角小片电池的制备方法，其特征在于，步骤2）中，通过对硅片的四个角进行打磨，使硅片的四个角形成倒角。
  3. 根据权利要求1所述的四倒角小片电池的制备方法，其特征在于，步骤3）中，所述硅片的倒角包括：两端与矩形硅片的一对相邻边线分别连接的倒角边；该对相邻边线相互垂直；所述倒角边为直线。
  4. 根据权利要求3所述的四倒角小片电池的制备方法，其特征在于，所述倒角边与上述一对相邻边线中一个边线的夹角为100～170度。
  5. 根据权利要求3所述的四倒角小片电池的制备方法，其特征在于，所述倒角边的长度为0.5～3mm。
  6. 根据权利要求1所述的四倒角小片电池的制备方法，其特征在于，步骤3）中，所述硅片的倒角包括：两端与矩形硅片的一对相邻边线分别连接的倒角边；该对相邻边线相互垂直；所述倒角边为弧线。
  7. 根据权利要求6所述的四倒角小片电池的制备方法，其特征在于，所述弧线为圆弧线。
  8. 根据权利要求1所述的四倒角小片电池的制备方法，其特征在于，所述圆弧线的半径为0.5～3mm。
  9. 根据权利要求6至8中任一项所述的四倒角小片电池的制备方法，其特征在于，所述弧线的长度为0.5～3mm。
PCT/CN2020/100654 2019-11-19 2020-07-07 一种四倒角小片电池的制备方法 WO2021098228A1 (zh)

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CN110828612A (zh) * 2019-11-19 2020-02-21 常州时创能源科技有限公司 四倒角小片电池的制备方法

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