WO2021022960A1 - 硅棒边皮料的利用方法 - Google Patents

硅棒边皮料的利用方法 Download PDF

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Publication number
WO2021022960A1
WO2021022960A1 PCT/CN2020/100650 CN2020100650W WO2021022960A1 WO 2021022960 A1 WO2021022960 A1 WO 2021022960A1 CN 2020100650 W CN2020100650 W CN 2020100650W WO 2021022960 A1 WO2021022960 A1 WO 2021022960A1
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Prior art keywords
silicon
edge leather
edge
silicon rod
leather
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PCT/CN2020/100650
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English (en)
French (fr)
Inventor
符黎明
孟祥熙
曹育红
绪欣
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常州时创能源股份有限公司
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Publication of WO2021022960A1 publication Critical patent/WO2021022960A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for using silicon rod side leather.
  • the silicon wafers used in crystalline silicon solar cells are cut from silicon rods.
  • the silicon rods are first removed from the head and tail materials, and then the silicon rods from which the head and tail materials are removed are cut into squares to obtain square rods for preparing silicon wafers.
  • the rod slices make silicon wafers.
  • edge leather The cutting of silicon rods will produce edge leather, and the edge leather is generally recycled or used as a seed crystal for high-efficiency polycrystalline ingots, resulting in low utilization of silicon rods.
  • the current preparation process of small-chip batteries is as follows: first prepare a finished battery piece (ie, a whole piece) with a width of not less than 150mm, and then divide the whole piece into small pieces with a width of 25-85mm. Generally, the finished cell is divided into two steps: dicing and splitting: 1) dicing: cutting the cell with a laser scribing machine to form a slit; 2) slicing: slicing the cell along the slit by a slicing machine , So that the whole cell is split into pieces (ie small pieces).
  • the finished cell is diced and split. After the split is completed, a damaged layer will be generated at the edge of the small chip (ie, the break of the whole piece).
  • the damaged layer has very high surface defects, and the surface defects will become the carrier recombination center.
  • the minority carrier lifespan in the edge area of the slice is reduced, and the surface recombination current increases significantly, which in turn leads to the loss of the open circuit voltage and short circuit current of the small battery, that is, the power loss of the small battery.
  • the present invention provides a method for utilizing silicon rod edge leather. First select qualified edge leather through inspection, and then cut the qualified edge leather into The silicon wafer of the solar cell is prepared; the silicon rod is a single crystal silicon rod; and the edge leather is the edge leather produced by cutting the single crystal silicon rod.
  • the inspection includes the electrical performance inspection of the leather trim; the electrical performance inspection of the leather trim includes the minority child life test and/or the electrical resistivity inspection of the trim leather.
  • the steps of the minor child life test of the edge leather material include: detecting the minority child life distribution in the length direction of the edge leather material, and select the qualified edge leather material based on the minority child life in the length direction. Longer than the expected lifetime of minority births. Preferably, the predetermined minority life span is not less than 1 us.
  • the step of testing the resistivity of the edge leather material includes: detecting the resistivity distribution in the length direction of the edge leather material, and selecting the qualified edge leather material according to the extreme difference of the resistivity in the length direction.
  • the difference is not greater than the predetermined extreme difference in resistivity.
  • the predetermined resistivity range is not more than 300%.
  • the cutting the qualified edge leather material into silicon wafers includes the following steps: first cut the edge leather material into small pieces of edge leather; and then cut the small pieces of edge leather into silicon blocks, the length direction of the silicon blocks and the edges The length of the leather segments is the same; then the silicon block is sliced into silicon wafers along the length of the silicon block.
  • the cutting the qualified edge leather material into silicon wafers includes the following steps: first cut the edge leather material into small pieces of edge leather; and then cut the small pieces of edge leather into silicon blocks, the length direction of the silicon blocks and the edges The length of the leather segments is the same; then the silicon block is sliced into silicon wafers along the direction at a certain angle with the length of the silicon block.
  • the silicon wafer is triangular, convex polygon or concave polygon.
  • the silicon wafer is a rectangular silicon wafer.
  • the four corners of the silicon wafer are rounded.
  • the width of the silicon wafer is smaller than that of a conventional square wafer or a quasi-square wafer.
  • the width of the silicon wafer is one-half, one-third, one-quarter, one-fifth, or one-sixth of the width of a conventional square chip or a quasi-square chip.
  • the above-mentioned silicon wafer is made into a solar cell, and the damaged layer on the edge of the silicon wafer is removed during the preparation of the solar cell.
  • the cell production line is used to make the above-mentioned silicon wafers into cells; the cell production line includes chain equipment and tubular equipment; or, the cell production line is a full chain production line.
  • the above-mentioned silicon wafer is divided into at least two pieces.
  • the segments are rectangular.
  • the four corners of the segment are rounded corners.
  • the width of the segment is smaller than that of a conventional square or quasi-square.
  • the width of the segments is one-half, one-third, one-quarter, one-fifth, or one-sixth of the width of a conventional square or quasi-square.
  • the above-mentioned slices are made into battery slices, and the damaged layer on the edges of the slices is removed during the preparation process of the battery slices.
  • a cell production line is used to make the above-mentioned slices into cells; the cell production line includes chain equipment and tube equipment; or, the cell production line is a full chain production line.
  • the solar cell module is prepared using the above-mentioned cell sheet.
  • the solar cell module uses a technology of non-monolithic cell (that is, the cell is divided into small pieces).
  • the solar cell module adopts half-chip, shingled or spliced technology.
  • the invention cuts the edge leather material into silicon wafers that can be prepared into solar cell chips, which can improve the utilization rate of silicon rods; compared with the existing method of melting the edge leather material to the furnace, the present invention can more effectively use the edge leather material. Reduce energy waste.
  • the invention selects qualified edge leather based on the extreme difference in the minority carrier lifetime in the length direction and the extreme difference in the resistivity in the length direction, so that the quality of the cut silicon wafers can be more uniform (the minority carrier lifetime distribution and the resistivity distribution of the silicon wafer are more uniform).
  • the length of the silicon wafer cut by the invention is relatively flexible, and is not limited by the width of the edge leather.
  • the edge leather material of appropriate length can be selected according to the predetermined silicon wafer length. For example, edge leather material with the same length as the silicon wafer length can be selected, or edge leather material with a length that is an integer multiple of the length of the silicon wafer can be selected.
  • an edge leather with an appropriate width according to the predetermined silicon wafer width. For example, select an edge leather whose width is slightly larger than that of the silicon wafer, or an edge leather whose width is slightly larger than an integer multiple of the width of the silicon wafer.
  • the silicon wafers cut from the edge leather material can be directly prepared into solar cell sheets, or the silicon wafers cut from the edge leather material can be further divided into pieces.
  • the present invention can cut small width (width is one-half, one-third, one-quarter, one-fifth, or one-sixth of the width of conventional square or quasi-square slice; for example, the width is 25 ⁇ 85mm) silicon wafers, and then produce small-chip batteries, and in the preparation of small-chip batteries, the damage layer on the edge of the silicon wafer can be removed through the conventional preparation process of the battery, thereby eliminating the adverse effects of the edge damage layer and avoiding dividing the finished battery
  • the chip ie, the whole chip) causes the power loss of the chip, and the small chip battery of the present invention is used to prepare the module, which can increase the power of the solar module.
  • the present invention provides a method for utilizing silicon rod side leather, which collects the side leather produced by cutting a single crystal silicon rod; selects qualified side leather through inspection, and then cuts the qualified side leather into silicon wafers; The silicon wafer is made into a cell, and the damaged layer on the edge of the cell is removed by edge etching during the preparation of the cell; then the cell is made into a solar cell module;
  • the inspection includes the electrical performance test of the leather material; the electrical performance test of the leather material includes the minority child life test of the leather material and/or the electrical resistance test of the leather material;
  • the steps of the minor child life test of the edge leather material include: detecting the minority child life distribution in the length direction of the edge leather material, and select the qualified edge leather material based on the minority child life in the length direction.
  • the qualified edge leather material needs to meet the extremely poor long-term minority child life. It is greater than the predetermined minority birth life; the predetermined minority birth life can be set according to the quality requirements of the battery, such as the predetermined minority birth life is not less than 1 us.
  • the step of testing the resistivity of the edge leather material includes: detecting the resistivity distribution in the length direction of the edge leather material, and selecting the qualified edge leather material according to the extreme difference of the resistivity in the length direction.
  • the difference is not greater than the predetermined range of resistivity; the predetermined range of resistivity can be set according to the quality requirements of the cell, such as the predetermined range of resistivity is not more than 300%.
  • the cutting of the qualified edge leather material into silicon wafers includes the following steps: firstly cut the edge leather material into small pieces of edge leather; then cut the small pieces of edge leather into silicon blocks, and the length direction of the silicon blocks and the small pieces of edge leather The length direction of the silicon block is the same; then the silicon block is sliced into silicon wafers along the length direction of the silicon block.
  • the cutting of the qualified edge leather material into silicon wafers includes the following steps: firstly cut the edge leather material into small pieces of edge leather; then cut the small pieces of edge leather into silicon blocks, and the length direction of the silicon blocks and the small pieces of edge leather The length direction of the silicon block is the same; then the silicon block is sliced into silicon wafers along the direction at a certain angle with the length direction of the silicon block.
  • the silicon wafer cut from the edge leather is triangular, convex or concave.
  • the silicon wafer cut from the edge leather is rectangular, and the four corners of the rectangle can be rounded.
  • the width of the silicon wafer is one-half, one-third, one-quarter, one-fifth, or one-sixth of the width of a conventional square or quasi-square wafer, for example, the width of the silicon wafer is 25-85mm; Silicon wafers of specifications can be directly prepared into small-chip cells, and the damage layer on the edge of the silicon chip will be etched away during the preparation of the small-chip cells, thereby eliminating the adverse effects of the edge damage layer. It can increase the power of solar modules.
  • the above-mentioned silicon wafers are made into solar cells using a cell production line; the cell production line includes chain equipment and tube equipment; or, the cell production line is a full chain production line.
  • the solar cell module adopts half-chip, shingle or splicing technology.
  • the present invention provides another method for utilizing silicon rod side leather, collecting the side leather produced by cutting the single crystal silicon rod; selecting qualified side leather through inspection, and then cutting the qualified side leather into silicon wafers; Then divide the silicon wafer into at least two pieces; then make the pieces into cells, and remove the damaged layer on the edges of the pieces by edge etching during the preparation of the cells; then prepare the solar cells from the cells;
  • the inspection includes the electrical performance test of the leather material; the electrical performance test of the leather material includes the minority child life test of the leather material and/or the electrical resistance test of the leather material;
  • the steps of the minor child life test of the edge leather material include: detecting the minority child life distribution in the length direction of the edge leather material, and select the qualified edge leather material based on the minority child life in the length direction. Greater than the expected life of few births; the life of the expected few births can be set according to the quality requirements of the battery, such as the expected life of few births not less than 1us;
  • the step of testing the resistivity of the edge leather material includes: detecting the resistivity distribution in the length direction of the edge leather material, and selecting the qualified edge leather material according to the extreme difference of the resistivity in the length direction.
  • the difference is not greater than the predetermined range of resistivity; the predetermined range of resistivity can be set according to the quality requirements of the cell, such as the predetermined range of resistivity is not more than 300%.
  • the cutting of the qualified edge leather material into silicon wafers includes the following steps: firstly cut the edge leather material into small pieces of edge leather; then cut the small pieces of edge leather into silicon blocks, and the length direction of the silicon blocks and the small pieces of edge leather
  • the length direction of the silicon block is consistent, the cross-sectional shape of the silicon block is rectangular, and the cross section is perpendicular to the length direction of the silicon block; and the silicon block is sliced into rectangular silicon wafers along the length direction of the silicon block.
  • the cutting of the qualified edge leather material into silicon wafers includes the following steps: firstly cut the edge leather material into small pieces of edge leather; then cut the small pieces of edge leather into silicon blocks, and the length direction of the silicon blocks and the small pieces of edge leather
  • the length direction of the silicon block is consistent, the cross-sectional shape of the silicon block is rectangular, and the cross section is perpendicular to the length direction of the silicon block; and the silicon block is sliced into rectangular silicon wafers along a direction at a certain angle with the length of the silicon block.
  • the slices that the silicon wafer is divided into are rectangular, and the width of the slices is one-half, one-third, one-quarter, one-fifth, or one-sixth of the width of a conventional square or quasi-square, such as
  • the width of the slices is 25-85mm; the slices of this specification can be directly prepared into small slices of batteries, and the damage layer on the edges of the slices will be etched during the preparation of the small slices of battery, thereby eliminating the adverse effects of the edge damage layer.
  • the small cells of Example 5 are used to prepare modules, which can increase the power of solar modules.
  • the cell production line uses the cell production line to make the above-mentioned slices into cells; the cell production line includes chain equipment and tube equipment; or, the cell production line is a full chain production line.
  • the solar cell module adopts half-chip, shingle or splicing technology.
  • the edge leather is cut into silicon wafers that can be prepared into solar cells, which can increase the utilization rate of silicon rods; compared with the existing method of melting and reheating edge leather, each embodiment can more effectively use the edge leather material reduces energy waste.
  • Each of the above embodiments selects qualified edge materials based on the extreme difference in the minority carrier life in the length direction and the extreme difference in the resistivity in the length direction, so that the quality of the cut silicon wafers can be more uniform (the minority carrier life distribution and resistivity distribution of the silicon wafers are relatively uniform ).

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Abstract

一种硅棒边皮料的利用方法，以长度方向少子寿命的极差、长度方向电阻率的极差来挑选合格边皮料，将边皮料切割成硅片。与现有边皮料熔融回炉的方式相比，该方法能更有效地利用边皮料，提高硅棒的利用率，减少能源浪费。

Description

硅棒边皮料的利用方法 技术领域
本发明涉及硅棒边皮料的利用方法。
 背景技术
晶体硅太阳能电池所用硅片由硅棒切割而成，一般先将硅棒去除头尾料，再将去除头尾料的硅棒进行切方，得到用于制备硅片的方棒，再将方棒切片制得硅片。
硅棒切方会产生边皮料，而边皮料一般都是回炉或用作高效多晶铸锭籽晶使用，造成硅棒的利用率较低。
另外，随着太阳能电池技术的发展，采用宽度为25～85mm的电池片（即小片电池）来制备组件，可提高太阳能组件的效率。
目前小片电池的制备工艺为：先制备出宽度不小于150mm的成品电池片（即整片），再将整片分割为宽度为25～85mm的小片。一般通过划片和裂片两个步骤来分割成品电池片：1）划片：通过激光划片机对电池片进行切割，形成切槽；2）裂片：通过裂片机沿切槽对电池片进行裂片，使电池片整片裂成分片（即小片）。
但对成品电池片进行划片和裂片，裂片完成后，小片边缘（即整片的断裂处）会产生损伤层，损伤层存在非常高的表面缺陷，表面缺陷会成为载流子复合中心，从而导致分片边缘区域少子寿命降低、表面复合电流明显增加，进而导致小片电池的开路电压和短路电流的损失，即导致小片电池的功率损失。
可见，小片边缘的损伤层会给小片电池带来不良影响，故需要去除小片边缘的损伤层。
 技术解决方案
为了解决现有技术中硅棒利用率较低的缺陷，本发明提供一种硅棒边皮料的利用方法，先通过检验挑选出合格的边皮料，再将合格的边皮料切割成可制备太阳能电池片的硅片；所述硅棒为单晶硅棒；所述边皮料为单晶硅棒切方产生的边皮料。
优选的，所述检验包括边皮料电学性能检验；所述边皮料电学性能检验包括边皮料少子寿命检验和/或边皮料电阻率检验。
所述边皮料少子寿命检验的步骤包括：检测边皮料长度方向的少子寿命分布，以长度方向的少子寿命来挑选合格边皮料，合格边皮料需满足长度方向少子寿命的极差不大于预定少子寿命。优选的，所述预定少子寿命不小于1us。
所述边皮料电阻率检验的步骤包括：检测边皮料长度方向的电阻率分布，以长度方向电阻率的极差来挑选合格边皮料，合格边皮料需满足长度方向电阻率的极差不大于预定电阻率极差。优选的，所述预定电阻率极差不大于300%。
优选的，所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致；再沿硅块的长度方向将硅块切片成硅片。
优选的，所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致；再沿与硅块长度方向呈一定夹角的方向将硅块切片成硅片。
优选的，所述硅片为三角形、凸多边形或凹多边形。
优选的，所述硅片为矩形硅片。
优选的，所述硅片的四角为圆角。
优选的，所述硅片的宽度比常规方片或准方片的宽度小。
优选的，所述硅片的宽度为常规方片或准方片宽度的二分之一、三分之一、四分之一、五分之一或六分之一。
优选的，将上述硅片制成电池片，且在电池片的制备过程中去除硅片边缘的损伤层。
优选的，采用电池片生产线将上述硅片制成电池片；电池片生产线包括链式设备和管式设备；或者，电池片生产线为全链式生产线。
优选的，将上述硅片分割成至少两个分片。
优选的，所述分片为矩形。
优选的，所述分片的四角为圆角。
优选的，所述分片的宽度比常规方片或准方片的宽度小。
优选的，所述分片的宽度为常规方片或准方片宽度的二分之一、三分之一、四分之一、五分之一或六分之一。
优选的，将上述分片制成电池片，且在电池片的制备过程中去除分片边缘的损伤层。
优选的，采用电池片生产线将上述分片制成电池片；电池片生产线包括链式设备和管式设备；或者，电池片生产线为全链式生产线。
优选的，采用上述电池片制备太阳能电池组件。
优选的，所述太阳能电池组件使用非整片电池片（即将电池片整片分割成小片）制作组件的技术。
优选的，所述太阳能电池组件采用半片、叠瓦或拼片技术。
 有益效果
本发明将边皮料切割成可制备成太阳能电池片的硅片，可提高硅棒的利用率；与现有边皮料熔融回炉的方式相比，本发明能更有效地利用边皮料，减少能源浪费。
本发明以长度方向少子寿命的极差、长度方向电阻率的极差来挑选合格边皮料，可使切割出的硅片品质比较均匀（硅片的少子寿命分布、电阻率分布比较均匀）。
本发明所切割硅片的长度灵活性较大，不受边皮料宽度的限制。可根据预先确定的硅片长度来挑选长度适当的边皮料，如挑选长度与硅片长度相同的边皮料，也可以挑选长度为硅片长度整数倍的边皮料。
还可根据预先确定的硅片宽度来挑选宽度适当的边皮料，如挑选宽度比硅片宽度略大的边皮料，也可以挑选宽度比硅片宽度整数倍略大的边皮料。
本发明可将边皮料切割出的硅片直接制备成太阳能电池片，也可将边皮料切割出的硅片进行进一步分割成分片。
本发明可切割出宽度较小（宽度为常规方片或准方片宽度的二分之一、三分之一、四分之一、五分之一或六分之一；如宽度为25～85mm）的硅片，进而制备出小片电池，且在小片电池的制备过程中，可通过电池片的常规制备工艺去除硅片边缘的损伤层，进而消除边缘损伤层的不良影响，避免分割成品电池片（即整片）而造成分片的功率损失，以本发明的小片电池来制备组件，可提高太阳能组件的功率。
 本发明的最佳实施方式
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
实施例1
本发明提供一种硅棒边皮料的利用方法，收集单晶硅棒切方产生的边皮料；通过检验挑选出合格的边皮料，再将合格的边皮料切割成硅片；再将硅片制成电池片，且在电池片的制备过程中通过边缘刻蚀去除电池片边缘的损伤层；再将电池片制备太阳能电池组件；
所述检验包括边皮料电学性能检验；所述边皮料电学性能检验包括边皮料少子寿命检验和/或边皮料电阻率检验；
所述边皮料少子寿命检验的步骤包括：检测边皮料长度方向的少子寿命分布，以长度方向的少子寿命来挑选合格边皮料，合格边皮料需满足长度方向少子寿命的极差不大于预定少子寿命；预定少子寿命可根据电池片的品质要求自行设定，如预定少子寿命不小于1us。
所述边皮料电阻率检验的步骤包括：检测边皮料长度方向的电阻率分布，以长度方向电阻率的极差来挑选合格边皮料，合格边皮料需满足长度方向电阻率的极差不大于预定电阻率极差；预定电阻率极差可根据电池片的品质要求自行设定，如预定电阻率极差不大于300%。
实施例2
在实施例1的基础上，区别在于：
所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致；再沿硅块的长度方向将硅块切片成硅片。
实施例3
在实施例1的基础上，区别在于：
所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致；再沿与硅块长度方向呈一定夹角的方向将硅块切片成硅片。
实施例4
在实施例2或3的基础上，区别在于：
边皮料切割成的硅片为三角形、凸多边形或凹多边形。
实施例5
在实施例2或3的基础上，区别在于：
边皮料切割成的硅片为矩形，矩形的四角可以为圆角。
实施例6
在实施例5的基础上，区别在于：
硅片的宽度为常规方片或准方片宽度的二分之一、三分之一、四分之一、五分之一或六分之一，如硅片的宽度为25～85mm；该规格的硅片可直接制备出小片电池，且在小片电池的制备过程中会刻蚀掉硅片边缘的损伤层，进而消除边缘损伤层的不良影响，以实施例5的小片电池来制备组件，可提高太阳能组件的功率。
实施例7
在实施例6的基础上，区别在于：
采用电池片生产线将上述硅片制成电池片；电池片生产线包括链式设备和管式设备；或者，电池片生产线为全链式生产线。
所述太阳能电池组件采用半片、叠瓦或拼片技术。
实施例8
本发明提供另一种硅棒边皮料的利用方法，收集单晶硅棒切方产生的边皮料；通过检验挑选出合格的边皮料，再将合格的边皮料切割成硅片；再将硅片分割成至少两个分片；再将分片制成电池片，且在电池片的制备过程中通过边缘刻蚀去除分片边缘的损伤层；再将电池片制备太阳能电池组件；
所述检验包括边皮料电学性能检验；所述边皮料电学性能检验包括边皮料少子寿命检验和/或边皮料电阻率检验；
所述边皮料少子寿命检验的步骤包括：检测边皮料长度方向的少子寿命分布，以长度方向的少子寿命来挑选合格边皮料，合格边皮料需满足长度方向少子寿命的极差不大于预定少子寿命；预定少子寿命可根据电池片的品质要求自行设定，如预定少子寿命不小于1us；
所述边皮料电阻率检验的步骤包括：检测边皮料长度方向的电阻率分布，以长度方向电阻率的极差来挑选合格边皮料，合格边皮料需满足长度方向电阻率的极差不大于预定电阻率极差；预定电阻率极差可根据电池片的品质要求自行设定，如预定电阻率极差不大于300%。
实施例9
在实施例8的基础上，区别在于：
所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致，硅块的截面形状为矩形，该截面与硅块的长度方向垂直；再沿硅块的长度方向将硅块切片成矩形硅片。
实施例10
在实施例8的基础上，区别在于：
所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致，硅块的截面形状为矩形，该截面与硅块的长度方向垂直；再沿与硅块长度方向呈一定夹角的方向将硅块切片成矩形硅片。
实施例11
在实施例9或10的基础上，区别在于：
硅片分割成的分片为长方形，分片的宽度为常规方片或准方片宽度的二分之一、三分之一、四分之一、五分之一或六分之一，如分片的宽度为25～85mm；该规格的分片可直接制备出小片电池，且在小片电池的制备过程中会刻蚀掉分片边缘的损伤层，进而消除边缘损伤层的不良影响，以实施例5的小片电池来制备组件，可提高太阳能组件的功率。
实施例12
在实施例11的基础上，区别在于：
采用电池片生产线将上述分片制成电池片；电池片生产线包括链式设备和管式设备；或者，电池片生产线为全链式生产线。
所述太阳能电池组件采用半片、叠瓦或拼片技术。
上述各实施例将边皮料切割成可制备成太阳能电池片的硅片，可提高硅棒的利用率；与现有边皮料熔融回炉的方式相比，各实施例能更有效地利用边皮料，减少能源浪费。
上述各实施例以长度方向少子寿命的极差、长度方向电阻率的极差来挑选合格边皮料，可使切割出的硅片品质比较均匀（硅片的少子寿命分布、电阻率分布比较均匀）。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (29)

  1. 硅棒边皮料的利用方法，其特征在于，先通过检验挑选出合格的边皮料，再将合格的边皮料切割成硅片。
  2. 根据权利要求1所述的硅棒边皮料的利用方法，其特征在于，所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致；再沿硅块的长度方向将硅块切片成硅片。
  3. 根据权利要求1所述的硅棒边皮料的利用方法，其特征在于，所述将合格的边皮料切割成硅片，包括如下步骤：先将边皮料截断成边皮料小段；再将边皮料小段切割成硅块，硅块的长度方向与边皮料小段的长度方向一致；再沿与硅块长度方向呈一定夹角的方向将硅块切片成硅片。
  4. 根据权利要求1所述的硅棒边皮料的利用方法，其特征在于，所述硅片为三角形、凸多边形或凹多边形。
  5. 根据权利要求1所述的硅棒边皮料的利用方法，其特征在于，所述硅片为矩形硅片。
  6. 根据权利要求5所述的硅棒边皮料的利用方法，其特征在于，所述硅片的四角为圆角。
  7. 根据权利要求5或6所述的硅棒边皮料的利用方法，其特征在于，所述硅片的宽度比常规方片或准方片的宽度小。
  8. 根据权利要求7所述的硅棒边皮料的利用方法，其特征在于，所述硅片的宽度为常规方片或准方片宽度的二分之一、三分之一、四分之一、五分之一或六分之一。
  9. 根据权利要求1所述的硅棒边皮料的利用方法，其特征在于，将上述硅片制成电池片，且在电池片的制备过程中去除硅片边缘的损伤层。
  10. 根据权利要求9所述的硅棒边皮料的利用方法，其特征在于，采用电池片生产线将上述硅片制成电池片；电池片生产线包括链式设备和管式设备；或者，电池片生产线为全链式生产线。
  11. 根据权利要求9或10所述的硅棒边皮料的利用方法，其特征在于，采用上述电池片制备太阳能电池组件。
  12. 根据权利要求11所述的硅棒边皮料的利用方法，其特征在于，所述太阳能电池组件使用非整片电池片制作组件的技术。
  13. 根据权利要求11所述的硅棒边皮料的利用方法，其特征在于，所述太阳能电池组件采用半片、叠瓦或拼片技术。
  14. 根据权利要求1所述的硅棒边皮料的利用方法，其特征在于，将上述硅片分割成至少两个分片。
  15. 根据权利要求14所述的硅棒边皮料的利用方法，其特征在于，所述分片为矩形。
  16. 根据权利要求15所述的硅棒边皮料的利用方法，其特征在于，所述分片的四角为圆角。
  17. 根据权利要求15或16所述的硅棒边皮料的利用方法，其特征在于，所述分片的宽度比常规方片或准方片的宽度小。
  18. 根据权利要求17所述的硅棒边皮料的利用方法，其特征在于，所述分片的宽度为常规方片或准方片宽度的二分之一、三分之一、四分之一、五分之一或六分之一。
  19. 根据权利要求14所述的硅棒边皮料的利用方法，其特征在于，将上述分片制成电池片，且在电池片的制备过程中去除分片边缘的损伤层。
  20. 根据权利要求19所述的硅棒边皮料的利用方法，其特征在于，采用电池片生产线将上述分片制成电池片；电池片生产线包括链式设备和管式设备；或者，电池片生产线为全链式生产线。
  21. 根据权利要求19或20所述的硅棒边皮料的利用方法，其特征在于，采用上述电池片制备太阳能电池组件。
  22. 根据权利要求21所述的硅棒边皮料的利用方法，其特征在于，所述太阳能电池组件使用非整片电池片制作组件的技术。
  23. 根据权利要求21所述的硅棒边皮料的利用方法，其特征在于，所述太阳能电池组件采用半片、叠瓦或拼片技术。
  24. 根据权利要求1所述的硅棒边皮料的利用方法，其特征在于，所述检验包括边皮料电学性能检验。
  25. 根据权利要求24所述的硅棒边皮料的利用方法，其特征在于，所述边皮料电学性能检验包括边皮料电阻率检验和/或边皮料少子寿命检验。
  26. 根据权利要求25所述的硅棒边皮料的利用方法，其特征在于，所述边皮料电阻率检验的步骤包括：检测边皮料长度方向的电阻率分布，以长度方向电阻率的极差来挑选合格边皮料，合格边皮料需满足长度方向电阻率的极差不大于预定电阻率极差。
  27. 根据权利要求26所述的硅棒边皮料的利用方法，其特征在于，所述预定电阻率极差不大于300%。
  28. 根据权利要求25所述的硅棒边皮料的利用方法，其特征在于，所述边皮料少子寿命检验的步骤包括：检测边皮料长度方向的少子寿命分布，以长度方向的少子寿命来挑选合格边皮料，合格边皮料需满足长度方向少子寿命的极差不大于预定少子寿命。
  29. 根据权利要求28所述的硅棒边皮料的利用方法，其特征在于，所述预定少子寿命不小于1us。
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