WO2021177292A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2021177292A1
WO2021177292A1 PCT/JP2021/007916 JP2021007916W WO2021177292A1 WO 2021177292 A1 WO2021177292 A1 WO 2021177292A1 JP 2021007916 W JP2021007916 W JP 2021007916W WO 2021177292 A1 WO2021177292 A1 WO 2021177292A1
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Prior art keywords
layer
semiconductor chip
support member
bonding
sintered
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PCT/JP2021/007916
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English (en)
French (fr)
Inventor
朝仁 岩重
遠藤　剛
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株式会社デンソー
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Priority to JP2022504390A priority Critical patent/JP7239051B2/ja
Priority to DE112021001365.3T priority patent/DE112021001365T5/de
Publication of WO2021177292A1 publication Critical patent/WO2021177292A1/ja
Priority to US17/872,142 priority patent/US20220359229A1/en

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Definitions

  • the present disclosure relates to a semiconductor device in which a semiconductor chip is arranged between a first support member and a second support member facing each other, and a method for manufacturing the same.
  • a semiconductor chip is arranged between a first support member and a second support member facing each other, a lower layer bonding member is arranged between the semiconductor chip and the first support member, and the semiconductor chip and the second support are provided.
  • a semiconductor device in which an upper layer bonding member is arranged between the member and the member has been proposed.
  • the lower layer bonding member and the upper layer bonding member are composed of a pressure sintered layer such as silver to improve the bonding reliability and thermal conductivity between the semiconductor chip and the first and second support members. Can be planned.
  • the semiconductor chip when the semiconductor chip is formed of a semiconductor element such as a MOSFET element or an IGBT element, the semiconductor chip has a one-sided electrode formed on one side on the second support member side and a gate wiring or the like is formed on the semiconductor chip. NS. Therefore, on the one-sided side of the semiconductor chip, a convex portion formed by the one-sided electrode, the gate wiring, and the like is formed.
  • the other surface side of the semiconductor chip, which is the first support member side, is in a flat state with the other surface electrodes formed on the entire surface.
  • MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor
  • IGBT Insulated Gate Bipolar Transistor.
  • a second support member is arranged on one surface side of the semiconductor chip via an upper layer bonding material constituting the upper layer bonding member, and heated and pressurized to form an upper layer bonding member composed of a pressure sintered layer.
  • an upper layer bonding member composed of a pressure sintered layer.
  • Non-Patent Document 1 proposes the following manufacturing method. That is, in this manufacturing method, as the second support member, a member having a groove portion corresponding to the convex portion of the semiconductor chip is prepared. Next, a sintered sheet for forming the pressure sintered layer is arranged in a portion of the second support member that is different from the portion where the groove portion is formed. Subsequently, the second support member is arranged on the semiconductor chip via the sintered sheet so that the convex portion and the groove portion of the second support member face each other.
  • the convex portion of the semiconductor chip is housed in the groove portion of the second support member, and the second support member is placed on the semiconductor chip so that the convex portion of the semiconductor chip does not come into contact with the second support member. Deploy. Then, by heating and pressurizing, the semiconductor chip and the second support member are joined via the upper layer joining member while forming the upper layer joining member composed of the pressure sintered layer from the sintered sheet.
  • the convex portion of the semiconductor chip and the second support member are arranged apart from each other, it is possible to suppress the concentration of stress on the convex portion of the semiconductor chip when pressure is applied. Therefore, it is possible to prevent the semiconductor chip from being destroyed.
  • the lower layer bonding member is configured by, for example, arranging a semiconductor chip on the first support member via the lower layer bonding material constituting the lower layer bonding member and pressurizing the semiconductor chip via the buffer member while heating. In this case, since the pressure is applied via the buffer member, the concentration of stress on the convex portion of the semiconductor chip is suppressed.
  • Non-Patent Document 1 when the semiconductor chip is warped, the second support member may come into contact with the convex portion. If pressure is applied in this state, the entire bonded portion may not be uniformly pressurized and stress may be concentrated on the convex portion, which may destroy the semiconductor chip.
  • the bonding area between the second support member (that is, the upper layer bonding member) and the semiconductor chip becomes small, and the bonding reliability and thermal conductivity may decrease.
  • An object of the present disclosure is to provide a semiconductor device capable of improving junction reliability and thermal conductivity while suppressing the destruction of a semiconductor chip and a method for manufacturing the same.
  • a method for manufacturing a semiconductor device is to prepare a semiconductor chip having one surface and another surface on the opposite side to one surface and having a convex portion on one surface side, and the semiconductor chip.
  • the first support member and the other surface of the semiconductor chip are joined via a lower layer bonding member including a pressure sintering layer so that the other surface faces the first support member, and one surface of the semiconductor chip is the second surface.
  • an upper layer joining member including a pressure-sintered layer so as to face the support member, and joining via the upper layer joining member.
  • the first constituent material including the sintering material is pressure-sintered on one surface of the semiconductor chip, and is inserted between the convex portions and is in contact with the convex portions, which is opposite to the semiconductor chip side.
  • a pre-bonded layer having a flattened surface is arranged, a second support member is arranged on the pre-bonded layer via a second constituent material including a sintered material, and pressure is applied while heating. By pressure-sintering the second constituent material, the upper-layer bonding member is formed together with the pre-bonding layer.
  • the pre-bonding layer whose surface opposite to the semiconductor chip side is flattened is arranged, when pressure is applied from the second constituent material to form the upper-layer bonding member together with the pre-bonding layer, the pre-bonding is performed.
  • the entire portion to be joined is uniformly pressurized to the layer. Therefore, it is possible to suppress the concentration of stress on the convex portion of the semiconductor chip and prevent the semiconductor chip from being broken.
  • the upper layer joining member that is, the pre-joining layer
  • the semiconductor device capable of improving the bonding area between the upper layer bonding member and the semiconductor chip is manufactured. Therefore, it is possible to manufacture a semiconductor device capable of improving the joint reliability and thermal conductivity between the semiconductor chip and the second support member.
  • the semiconductor device has a first support member, a second support member, one surface and another surface on the opposite side to the one surface, and a convex portion is formed on the one surface side.
  • a semiconductor chip arranged between the first support member and the second support member with one surface facing the first support member and the other surface facing the second support member, and the first support member and the semiconductor chip.
  • a lower layer bonding member arranged between the two, and an upper layer bonding member arranged between the second support member and the semiconductor chip, and the upper layer bonding member is an intermediate metal layer.
  • a sintered layer composed of a pressure sintered layer, which is arranged so as to sandwich an intermediate metal layer in the stacking direction of the first support member and the second support member, and is a sintered layer on the semiconductor chip side. Is arranged so as to join the semiconductor chip and the intermediate metal layer and come into contact with the convex portion while entering between the convex portions, and the sintered layer on the second support member side is the intermediate metal layer and the second support member. And are joined.
  • the upper layer joining member (that is, the pre-joining layer) is arranged so as to enter between the convex portions and come into contact with the convex portions. Therefore, it is possible to improve the bonding area between the upper layer bonding member and the semiconductor chip. Therefore, it is possible to improve the joint reliability and thermal conductivity between the semiconductor chip and the second support member.
  • the upper layer joining member has an intermediate metal layer.
  • the intermediate metal layer is composed of a bulk metal layer, the atomic density is higher than that of the sintered layer, so that the thermal conductivity can be further improved.
  • the intermediate metal layer is composed of a sintered layer of silver or copper and the sintered layer has a higher atomic density than the sintered layer sandwiching the intermediate metal layer, the thermal conductivity is improved.
  • the intermediate metal layer is composed of a sintered layer of silver or copper and the atomic density of the sintered layer is lower than that of the sintered layer sandwiching the intermediate metal layer, the intermediate metal layer is formed.
  • the stress generated on the semiconductor chip can be reduced, and the reliability can be improved.
  • the intermediate metal layer is a bonding layer having a low elastic modulus
  • the strength of the intermediate metal layer is reduced. Therefore, when some trouble occurs in the semiconductor device, it is possible to suppress the destruction of the semiconductor chip due to the destruction of the intermediate metal layer.
  • the upper layer joining member has an intermediate metal layer, the thickness can be easily adjusted, and the degree of freedom in design can be improved.
  • the semiconductor device of this embodiment has a configuration including a first support member 10, a second support member 20, and a semiconductor chip 30. Further, the semiconductor device is configured to include a lower layer joining member 40, an upper layer joining member 50, and the like.
  • the first support member 10 is composed of, for example, a DBC (abbreviation of Direct Bonded Copper) substrate, an AMB (abbreviation of Active Metal brazed Copper) substrate, a heat sink, and the like.
  • the second support member 20 is composed of, for example, a DBC substrate, an AMB substrate, a heat sink, a terminal, and the like.
  • the semiconductor chip 30 is made of silicon, silicon carbide, or the like, and for example, a semiconductor element such as a MOSFET element or an IGBT element is formed. Although detailed description of the configuration of the semiconductor chip 30 is omitted, a one-sided electrode, a gate wiring, and the like are formed on the one-sided 30a side so that a current flows between the one-sided 30a and the other-sided 30b, and the other-sided 30b An other surface electrode is formed on the side.
  • the semiconductor chip 30 of the present embodiment is in a warped state so that one side 30a side is convex. Since different members such as one-sided electrodes and gate wiring are formed on the one-sided 30a side of the semiconductor chip 30, the convex portion 31 is formed. That is, the semiconductor chip 30 is in a state in which the convex portion 31 is formed on the one surface while warping so that the one surface 30a side becomes convex. For example, on the one side 30a side of the semiconductor chip 30, the portion where the gate wiring is covered with the protective film becomes the convex portion 31, and the outer surface of the convex portion 31 is composed of the protective film.
  • the one-sided electrode is exposed from the convex portion 31 (that is, the protective film).
  • the convex portion 31 that is, the protective film.
  • other surface electrodes are formed on the other surface 30b side of the semiconductor chip 30 as a whole.
  • the convex portion 31 on the one side 30a side of the semiconductor chip 30 is also simply referred to as the convex portion 31 of the semiconductor chip 30.
  • the semiconductor chip 30 is arranged between the first support member 10 and the second support member 20 with the other surface 30b facing the first support member 10 and the one surface 30a facing the second support member 20. ing.
  • the lower layer bonding member 40 electrically and mechanically connects the first support member 10 and the other surface electrode formed on the other surface 30b side of the semiconductor chip 30 between the first support member 10 and the semiconductor chip 30. Arranged to connect.
  • the lower layer bonding member 40 is composed of a pressure sintering layer in which silver particles are pressure-sintered.
  • the upper layer bonding member 50 electrically and mechanically connects the second support member 20 and the one-sided electrode formed on the one side 30a side of the semiconductor chip 30 between the second support member 20 and the semiconductor chip 30. It is arranged like this.
  • the first pressure sintered layer 61, the intermediate metal layer 71, the second pressure sintered layer 62, the intermediate metal layer 72, and the third pressure sintered layer 63 are semiconductor chips.
  • the structure is such that the layers are stacked in order from the 30 side. That is, the upper layer joining member 50 is in a state in which the intermediate metal layers 71 and 72 are sandwiched between the first to third pressure sintered layers 61 to 63 in the stacking direction of the first support member 10 and the second support member 20. It has become.
  • the first to third pressure-sintered layers 61 to 63 are composed of pressure-sintered layers in which silver particles are pressure-sintered.
  • the intermediate metal layers 71 and 72 are composed of a bulk metal layer of silver, and have a higher atomic density than the first to third pressure sintered layers 61 to 63.
  • the upper layer bonding member 50 comes into contact with the convex portion 31 while entering between the adjacent convex portions 31 so that the first pressure sintered layer 61 fills the space between the adjacent convex portions 31 of the semiconductor chip 30. It is arranged like this. That is, in the semiconductor chip 30, the entire portion (for example, one-sided electrode) exposed from between the adjacent convex portions 31 is bonded to the first pressure sintering layer 61.
  • the above is the configuration of the semiconductor device in this embodiment.
  • the manufacturing method of the semiconductor device will be described with reference to FIGS. 2A to 2E.
  • the following manufacturing method may also be referred to as a BESiP (abbreviation of Build Even Surface in Process) method.
  • a semiconductor chip 30 having a convex portion 31 formed on one side 30a is prepared.
  • the semiconductor chip 30 of the present embodiment is warped in a state where one surface 30a side is convex. That is, the semiconductor chip 30 of the present embodiment is in a state in which the convex portion 31 is formed on the one surface 30a while warping so that the one surface 30a side is convex.
  • the semiconductor chip 30 is placed on the first support member 10 via a lower layer sheet 100 containing silver particles as a sintering material.
  • the lower layer sheet 100 is transferred to the other surface 30b of the semiconductor chip 30, and the semiconductor chip 30 is arranged on the first support member 10 via the lower layer sheet 100.
  • a non-slip tack material may be arranged between the first support member 10 and the lower layer sheet 100.
  • the tack material for example, a sintered silver paste, a solvent for forming the sintered silver paste, or the like is used.
  • the lower layer sheet 100 corresponds to the lower layer bonding material. Further, when transferring the lower layer sheet 100 to the other surface 30b of the semiconductor chip 30, for example, the following method is adopted. That is, first, a sintered material containing silver particles for forming the lower layer sheet 100 is placed on a jig or the like. In this case, the sintered material may be in the form of a paste or in the form of a sheet. Then, the other surface 30b of the semiconductor chip 30 is brought into contact with the sintered material, and pressure is applied while heating. As a result, the sintered material is transferred to the other surface 30b of the semiconductor chip 30, and the lower layer sheet 100 is arranged on the other surface 30b of the semiconductor chip 30. The heating temperature and pressing force at the time of transfer are adjusted so that the transferred lower layer sheet 100 is in an unsintered state.
  • the first constituent material 110 is arranged on the one side 30a side of the semiconductor chip 30.
  • the first constituent material 110 has a first sheet 111 and a second sheet 112 containing silver particles as a sintering material, and an intermediate metal layer 71 as a support layer, and the first sheet 111 and the like.
  • the intermediate metal layer 71 is arranged between the second sheet 112 and the second sheet 112. That is, in the first constituent material 110 of the present embodiment, the first sheet 111 and the second sheet 112 are arranged on the front and back surfaces of the intermediate metal layer 71 serving as the support layer in order to realize a material in a preform form that is excellent in handling. It is a preform structure with a three-layer structure.
  • the first constituent material 110 is arranged so that the first sheet 111 is on the semiconductor chip 30 side.
  • a non-slip tack material may be arranged between the semiconductor chip 30 and the first constituent material 110.
  • the tack material for example, a sintered silver paste, a solvent for forming the sintered silver paste, or the like is used.
  • the first sheet 111 and the second sheet 112 are composed of a silver sheet obtained by evaporating and removing a solvent from a silver paste containing silver particles, and are transferred to and arranged on the intermediate metal layer 71. However, the first sheet 111 and the second sheet 112 are in an unsintered state. Further, the intermediate metal layer 71 of the present embodiment is composed of a silver bulk metal layer as described above.
  • the cushioning member 200 is arranged so as to cover the semiconductor chip 30 and the first constituent material 110. Then, while heating, the pressure is applied by the pressurizing device 210 via the buffer member 200. That is, in the present embodiment, the lower layer sheet 100 and the first constituent material 110 are heated and pressurized at the same time.
  • the lower layer sheet 100 is heated and pressurized to form a lower layer bonding member 40 which is a pressure sintering layer, and the first support member 10 and the semiconductor chip 30 are bonded via the lower layer bonding member 40.
  • the first constituent material 110 is heated and pressurized to form the pre-bonded layer 51.
  • the first sheet 111 in the first constituent material 110 is heated and pressurized to form the first pressure sintered layer 61.
  • the first pressure sintering layer 61 is configured and arranged while being deformed so as to enter between the convex portions 31 and come into contact with the convex portions 31.
  • the first constituent material 110 is pressurized via the cushioning member 200, the stress is concentrated on the convex portion 31 of the semiconductor chip 30 by performing uniform pressing due to the deformation of the cushioning member 200. Is suppressed. Therefore, it is possible to prevent the semiconductor chip 30 from being destroyed.
  • the second sheet 112 of the first constituent material 110 is heated and pressurized to form a second lower pressure sintered layer 62a, which is a portion of the second pressurized sintered layer 62 on the semiconductor chip 30 side.
  • a second lower pressure sintered layer 62a is pressurized by the pressurizing device 210 via the buffer member 200, the surface opposite to the semiconductor chip 30 side becomes flat.
  • the pre-bonding layer 51 is arranged on the one surface 30a of the semiconductor chip 30 while being bonded to the one surface 30a of the semiconductor chip 30 and having a flat surface opposite to the semiconductor chip 30 side.
  • the second support member 20 is arranged on the pre-joining layer 51 via the second constituent material 120.
  • the second constituent material 120 of the present embodiment has the same configuration as the first constituent material 110. That is, the second constituent material 120 has a first sheet 121 and a second sheet 122 containing silver particles as a sintering material, and an intermediate metal layer 72, and is between the first sheet 121 and the second sheet 122.
  • the intermediate metal layer 72 is arranged in the structure. That is, in the second constituent material 120 of the present embodiment, the first sheet 121 and the second sheet 122 are arranged on the front and back surfaces of the intermediate metal layer 72 as the support layer in order to realize a material in a preform form that is excellent in handling.
  • the second constituent material 120 is arranged so that the first sheet 121 is on the side of the pre-bonding layer 51.
  • a non-slip tack material may be arranged between the pre-bonded layer 51 and the second constituent material 120.
  • the tack material for example, a sintered silver paste, a solvent for forming the sintered silver paste, or the like is used.
  • pressurization is performed by the pressurizing device 210 while heating.
  • the first sheet 121 in the second constituent material 120 is pressure-sintered, and the second pressure-sintered layer 62 is formed together with the second lower-layer pressure-sintered layer 62a.
  • the second sheet 122 of the second constituent material 120 is pressure-sintered to form the third pressure-sintered layer 63.
  • the semiconductor device shown in FIG. 1 is manufactured.
  • the entire bonded portion is uniformly pressurized. Therefore, it is possible to suppress the occurrence of stress concentration in the convex portion 31 due to this pressurization. That is, in the present embodiment, it is possible to suppress the occurrence of stress concentration on the convex portion 31 of the semiconductor chip 30 when the pressure is applied to form the upper layer bonding member 50. Therefore, it is possible to prevent the semiconductor chip 30 from being destroyed.
  • the second support member 20 before the second support member 20 is arranged on the semiconductor chip 30, it enters between the convex portions 31 and comes into contact with the convex portions 31, and the surface opposite to the semiconductor chip 30 side. Is arranged with a flattened pre-bonded layer 51. Then, the second support member 20 is arranged on the pre-bonded layer 51 via the second constituent material 120, and by heating and pressurizing, the upper layer bonded member 50 including the pressure sintered layer is formed together with the pre-bonded layer 51. It is configured.
  • the pre-bonding layer 51 whose surface opposite to the semiconductor chip 30 side is flattened is arranged, and the entire bonded portion is uniformly pressurized on the pre-bonding layer 51. Therefore, it is possible to suppress the concentration of stress on the convex portion 31 of the semiconductor chip 30, and it is possible to prevent the semiconductor chip 30 from being destroyed. Further, since the upper layer joining member 50 is arranged so as to enter between the convex portions 31 and come into contact with the convex portion 31, the bonding area with the semiconductor chip 30 can be improved. Therefore, it is possible to improve the joint reliability and thermal conductivity between the semiconductor chip 30 and the second support member 20.
  • the pre-bonding layer 51 is configured by arranging the first constituent material 110 on the semiconductor chip 30 and heating and pressurizing the first constituent material 110 via the buffer member 200. Therefore, it is possible to suppress the concentration of stress on the convex portion 31 of the semiconductor chip 30 even during this pressurization, and it is possible to prevent the semiconductor chip 30 from being destroyed.
  • the lower layer sheet 100 is heated and pressurized to form the lower layer joining member 40, and the first constituent material 110 is heated and pressed to form the pre-joining layer 51 at the same time. There is. Therefore, the manufacturing process can be simplified.
  • the upper layer joining member 50 is configured to have first to third pressure sintered layers 61 to 63 composed of pressure sintered layers and intermediate metal layers 71 and 72.
  • the intermediate metal layers 71 and 72 of the present embodiment are composed of bulk metal layers. Therefore, for example, the intermediate metal layers 71 and 72 having a higher atomic density are arranged as compared with the case where the upper layer bonding member 50 is composed of only the first to third pressure sintered layers 61 to 63. Therefore, the thermal conductivity can be further improved. In this case, since the plurality of intermediate metal layers 71 and 72 are arranged in the present embodiment, the thermal conductivity can be further improved.
  • the upper layer joining member 50 is configured to have intermediate metal layers 71 and 72 as support layers, as compared with the case where the upper layer joining member 50 is composed of only the first to third pressure sintered layers 61 to 63. , It becomes easy to adjust the thickness. Therefore, the stress design value relaxed by the upper layer joining member 50 can be easily adjusted, and the degree of freedom in design can be improved.
  • the upper layer joining member 50 may not include the intermediate metal layers 71 and 72 and may be composed only of the pressure sintered layer.
  • the upper layer joining member 50 may have, for example, a configuration having one intermediate metal layer or a configuration having three or more intermediate metal layers.
  • the intermediate metal layers 71 and 72 may be composed of a bulk metal layer such as copper or aluminum instead of the silver bulk metal layer. That is, the intermediate metal layers 71 and 72 may be made of a metal different from that of the first to third pressure sintered layers 61 to 63.
  • the intermediate metal layers 71 and 72 are made of materials different from those of the first to third pressure sintered layers 61 to 63, the intermediate metal layers 71 and 72 are subjected to the first to third pressure sintering layers. Compared with the case where the same material as the layers 61 to 63 is used, the bondability between the intermediate metal layers 71 and 72 and the first to third pressure sintered layers 61 to 63 can be lowered.
  • the intermediate metal layers 71 and 72 are made of the same materials as the first to third pressure sintered layers 61 to 63, the intermediate metal layers 71 and 72 and the first to third pressure sintered layers 71 and 72 are sintered. The bondability with the layers 61 to 63 can be improved.
  • the intermediate metal layers 71 and 72 may be composed of a sintered layer containing silver or copper as a main component. In this case, when arranging the first constituent material 110 of FIG.
  • the sintered layer formed into a film by a sintering reaction in advance is used as the intermediate metal layer 71, and the intermediate metal layer 71 is the first sheet 111 and The first constituent material 110 sandwiched between the second sheets 112 is arranged.
  • the sintered layer formed into a film by a sintering reaction in advance is used as the intermediate metal layer 72, and the intermediate metal layer 72 is the first sheet 121 and The second constituent material 120 sandwiched between the second sheets 122 is arranged. According to this, when the sintered layers constituting the intermediate metal layers 71 and 72 have higher atomic densities than the first sheets 111 and 121 and the second sheets 121 and 122, the thermal conductivity is improved.
  • the intermediate metal layers 71 and 72 can be planned. Further, when the sintered layers constituting the intermediate metal layers 71 and 72 have lower atomic densities than the first sheets 111 and 121 and the second sheets 121 and 122, the intermediate metal layers 71 and 72 are lowered. It can be a bonding layer with elastic modulus. Therefore, the stress generated on the semiconductor chip 30 can be reduced, and the reliability can be improved. Further, when the intermediate metal layers 71 and 72 are formed as a bonding layer having a low elastic modulus, the strength of the intermediate metal layers 71 and 72 is reduced. Therefore, when some trouble occurs in the semiconductor device, it is possible to prevent the semiconductor chip 30 from being destroyed by destroying the intermediate metal layers 71 and 72.
  • the first constituent material 110 does not contain the first and second sheets 111 and 112, but is a silver paste composed of silver particles mixed with a solvent such as alcohol or ethylene glycol. It may be configured to include. Further, the first constituent material 110 may not include the intermediate metal layer 71 and may be composed only of the first sheet 111 or the silver paste. Similarly, the second constituent material 120 does not contain the first and second sheets 121 and 122, but contains a silver paste composed of silver particles mixed with a solvent such as alcohol or ethylene glycol. You may. Further, the second constituent material 120 may not include the intermediate metal layer 72 and may be composed only of the first sheet 121 or the silver paste.
  • the upper layer joining member 50 may be configured to include other metal particles.
  • the first constituent material 110 may be configured to contain a copper paste composed of copper particles mixed with a solvent such as alcohol or ethylene glycol, or may be a copper sheet from which the solvent has been removed from the copper paste. It may be configured.
  • the second constituent material 120 may be configured to contain a copper paste composed of copper particles mixed with a solvent such as alcohol or ethylene glycol, or a copper sheet from which the solvent has been removed from the copper paste. It may be composed of.
  • the intermediate metal layers 71 and 72 may be made of silver, copper, or aluminum.
  • the lower layer joining member 40 may be configured to contain copper in the same manner as the upper layer joining member 50.
  • the following when arranging the semiconductor chip 30 on the first support member 10 via the lower layer sheet 100, the following may be performed. That is, after arranging the lower layer sheet 100 that is separate from the semiconductor chip 30 on the first support member 10, the semiconductor chip 30 may be arranged on the lower layer sheet 100.
  • heating and pressurizing the lower layer sheet 100 to form the lower layer bonding member 40 and heating and pressurizing the first constituent material 110 to form the pre-bonding layer 51 are defined. It may be performed in a separate process.
  • the semiconductor chip 30 is warped so as to be convex toward one surface 30a.
  • the semiconductor chip 30 may be warped so that the other surface 30b side is convex.
  • the first embodiment is carried out by performing the same manufacturing method as the first embodiment. The same effect as the morphology can be obtained.
  • the pre-bonded layer 51 is connected to the one-sided electrode exposed from between the convex portions 31 of the semiconductor chip 30 .
  • the gate pad may be exposed from a portion different from that between the convex portions 31. Therefore, a pre-bonding layer may be formed on the gate pad as well.
  • the pre-bonding layer is arranged on the gate pad, the pre-bonding layer 51 to be bonded to the one-sided electrode exposed from between the convex portions 31 and the gate pad arranged in a portion different from the convex portion 31 are connected. It needs to be insulated from the pre-bonded layer to be formed.
  • a wire, a terminal portion, or the like connected to an external circuit may be connected to the pre-bonding layer connected to the gate pad.
  • the manufacturing process is simplified by performing the pre-bonding layer at the same time as the step of forming the pre-bonding layer 51 connected to the one-sided electrode. be able to.

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Abstract

上層接合部材（５０）を介して接合することでは、半導体チップ（３０）の一面（３０ａ）上に、焼結材料を含む第１構成材料（１１０）が加圧焼結されることで構成され、凸部（３１）の間に入り込むと共に凸部（３１）と接触しており、半導体チップ（３０）側と反対側の面が平坦化された事前接合層（５１）を配置することと、事前接合層（５１）上に、焼結材料を含む第２構成材料（１２０）を介して第２支持部材（２０）を配置することと、加熱しながら加圧して第２構成材料（１２０）における焼結材料を加圧焼結することにより、事前接合層（５１）と共に上層接合部材（５０）を構成することと、を行う。

Description

半導体装置およびその製造方法 関連出願への相互参照
　本出願は、２０２０年３月４日に出願された日本特許出願番号２０２０－３６９３９号に基づくもので、ここにその記載内容が参照により組み入れられる。
　本開示は、対向する第１支持部材と第２支持部材との間に半導体チップが配置された半導体装置およびその製造方法に関する。
　従来より、対向する第１支持部材と第２支持部材との間に半導体チップが配置され、半導体チップと第１支持部材との間に下層接合部材が配置されると共に、半導体チップと第２支持部材との間に上層接合部材が配置された半導体装置が提案されている。この場合、下層接合部材および上層接合部材は、銀等の加圧焼結層で構成されることにより、半導体チップと第１、第２支持部材との間の接合信頼性や熱伝導性の向上を図ることができる。
　しかしながら、半導体チップがＭＯＳＦＥＴ素子やＩＧＢＴ素子等の半導体素子が形成されたものである場合、半導体チップは、第２支持部材側である一面側に一面電極が形成されると共にゲート配線等が形成される。このため、半導体チップの一面側は、一面電極およびゲート配線等によって構成される凸部が形成された状態となっている。なお、半導体チップのうちの第１支持部材側である他面側は、全体に他面電極が形成され、平坦な状態となっている。ＭＯＳＦＥＴは、Metal Oxide Semiconductor Field Effect Transistorの略であり、ＩＧＢＴは、Insulated Gate Bipolar Transistorの略である。
　この場合、例えば、半導体チップの一面側に上層接合部材を構成する上層接合材料を介して第２支持部材を配置し、加熱、加圧して加圧焼結層で構成される上層接合部材を構成しつつ、上層接合部材と第２支持部材とを接合しようとすると、半導体チップの凸部に応力が集中する可能性がある。したがって、半導体チップが破壊される可能性がある。
　このため、例えば、非特許文献１には、次の製造方法が提案されている。すなわち、この製造方法では、第２支持部材として、半導体チップの凸部に対応する溝部が形成されたものを用意する。次に、第２支持部材のうちの溝部が形成された部分と異なる部分に、加圧焼結層を構成するための焼結シートを配置する。続いて、半導体チップ上に、凸部と第２支持部材の溝部とが対向するように、焼結シートを介して第２支持部材を配置する。具体的には、第２支持部材の溝部内に半導体チップの凸部が収容されると共に、第２支持部材と半導体チップの凸部とが接触しないように、半導体チップ上に第２支持部材を配置する。その後、加熱、加圧することにより、焼結シートから加圧焼結層で構成される上層接合部材を構成しつつ、半導体チップと第２支持部材とを上層接合部材を介して接合する。
　これによれば、半導体チップの凸部と第２支持部材とが離れて配置されるため、加圧した際、半導体チップの凸部に応力が集中することを抑制できる。このため、半導体チップが破壊されることを抑制できる。
　なお、下層接合部材は、例えば、第１支持部材上に、下層接合部材を構成する下層接合材料を介して半導体チップを配置し、加熱しつつ緩衝部材を介して加圧することによって構成される。この場合は、緩衝部材を介して加圧されるため、半導体チップの凸部に応力が集中することが抑制される。
Gustavo Greca, Paul Salerno, Jeffrey Durham, Francois Le Henaff, Jean Claude Harel, Johan Hamelink, Weikun He著、「View All Authors Double Side Sintered IGBT 650V/ 200A in a TO-247 Package for Extreme Performance and Reliability」、Electronics Packaging Technology Conference予稿集、２０１６年
　しかしながら、上記の非特許文献１の製造方法では、半導体チップが反っている場合、第２支持部材が凸部と接触する可能性がある。そして、この状態で加圧すると、接合される部分の全体が均一に加圧されずに凸部に応力が集中する可能性があり、半導体チップが破壊される可能性がある。
　このため、例えば、第２支持部材の溝部を大きくすることにより、半導体チップが反ったとしても凸部と第２支持部材とが接触しないようにすることも考えられる。しかしながら、この方法では、第２支持部材（すなわち、上層接合部材）と半導体チップとの接合面積が小さくなり、接合信頼性および熱伝導性が低下してしまう可能性がある。
　本開示は、半導体チップが破壊されることを抑制しつつ、接合信頼性および熱伝導性を向上できる半導体装置およびその製造方法を提供することを目的とする。
　本開示の１つの観点によれば、半導体装置の製造方法は、一面および一面と反対側の他面を有し、一面側に凸部が構成された半導体チップを用意することと、半導体チップの他面が第１支持部材と対向するように、第１支持部材と半導体チップの他面とを加圧焼結層を含む下層接合部材を介して接合することと、半導体チップの一面が第２支持部材と対向するように、第２支持部材と半導体チップの一面とを加圧焼結層を含む上層接合部材を介して接合することと、を行い、上層接合部材を介して接合することでは、半導体チップの一面上に、焼結材料を含む第１構成材料が加圧焼結されることで構成され、凸部の間に入り込むと共に凸部と接触しており、半導体チップ側と反対側の面が平坦化された事前接合層を配置することと、事前接合層上に、焼結材料を含む第２構成材料を介して第２支持部材を配置することと、加熱しながら加圧して第２構成材料を加圧焼結することにより、事前接合層と共に上層接合部材を構成することと、を行う。
　これによれば、半導体チップ側と反対側の面が平坦化された事前接合層が配置されているため、第２構成材料から加圧して事前接合層と共に上層接合部材を構成する際、事前接合層には、接合される部分の全体が均一に加圧される。このため、半導体チップの凸部に応力が集中することを抑制でき、半導体チップが破壊されることを抑制できる。また、上層接合部材（すなわち、事前接合層）は、凸部の間に入り込むと共に凸部と接触するように配置される。このため、上層接合部材と半導体チップとの接合面積の向上を図ることのできる半導体装置が製造される。したがって、半導体チップと第２支持部材との接合信頼性および熱伝導性の向上を図ることのできる半導体装置を製造できる。
　また、本開示の別の観点によれば、半導体装置は、第１支持部材と、第２支持部材と、一面および一面と反対側の他面を有し、一面側に凸部が構成され、一面が第１支持部材と対向すると共に他面が第２支持部材と対向する状態で第１支持部材と第２支持部材との間に配置される半導体チップと、第１支持部材と半導体チップとの間に配置され、加圧焼結層で構成される下層接合部材と、第２支持部材と半導体チップとの間に配置された上層接合部材と、を備え、上層接合部材は、中間金属層と、第１支持部材と第２支持部材との積層方向において中間金属層を挟むように配置され、加圧焼結層で構成される焼結層とを有し、半導体チップ側の焼結層は、半導体チップと中間金属層とを接合すると共に、凸部の間に入り込みつつ凸部と接触するように配置され、第２支持部材側の焼結層は、中間金属層と第２支持部材とを接合している。
　これによれば、上層接合部材（すなわち、事前接合層）は、凸部の間に入り込むと共に凸部と接触するように配置されている。このため、上層接合部材と半導体チップとの接合面積の向上を図ることができる。したがって、半導体チップと第２支持部材との接合信頼性および熱伝導性の向上を図ることができる。
　また、上層接合部材は、中間金属層を有している。そして、中間金属層をバルク金属層で構成した場合には、焼結層よりも原子密度が高くなるため、熱伝導性の向上をさらに図ることができる。また、中間金属層を銀や銅の焼結層で構成すると共に、当該焼結層が中間金属層を挟む焼結層よりも原子密度が高くなるようにした場合には、熱伝導性の向上をさらに図ることができる。これに対し、中間金属層を銀や銅の焼結層で構成すると共に、当該焼結層が中間金属層を挟む焼結層よりも原子密度が低くなるようにした場合には、中間金属層を低弾性率な接合層とできる。このため、半導体チップへの発生応力を低減でき、信頼性の向上を図ることができる。また、中間金属層が低弾性率な接合層とされている場合には、中間金属層の強度が小さくなる。このため、半導体装置に何らかの不具合が発生した際には、中間金属層が破壊されることで半導体チップが破壊されることを抑制できる。さらに、上層接合部材は、中間金属層を有しているため、厚さの調整がし易くなり、設計の自由度の向上を図ることができる。
　なお、各構成要素等に付された括弧付きの参照符号は、その構成要素等と後述する実施形態に記載の具体的な構成要素等との対応関係の一例を示すものである。
第１実施形態における半導体装置の断面図である。 図１に示す半導体装置の製造工程を示す断面図である。 図２Ａに続く半導体装置の製造工程を示す断面図である。 図２Ｂに続く半導体装置の製造工程を示す断面図である。 図２Ｃに続く半導体装置の製造工程を示す断面図である。 図２Ｄに続く半導体装置の製造工程を示す断面図である。
　以下、本開示の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。
　（第１実施形態）
　第１実施形態について、図面を参照しつつ説明する。本実施形態の半導体装置は、図１に示されるように、第１支持部材１０、第２支持部材２０、および半導体チップ３０を備えた構成とされている。また、半導体装置は、下層接合部材４０および上層接合部材５０等を備えた構成とされている。
　第１支持部材１０は、例えば、ＤＢＣ（Direct Bonded Copperの略）基板、ＡＭＢ（Active Metal brazed Copperの略）基板、ヒートシンク等で構成されている。第２支持部材２０は、例えば、ＤＢＣ基板、ＡＭＢ基板、ヒートシンク、ターミナル等で構成されている。
　半導体チップ３０は、シリコンや炭化珪素シリコン等を用いて構成されており、例えば、ＭＯＳＦＥＴ素子やＩＧＢＴ素子等の半導体素子が形成されている。そして、半導体チップ３０は、詳細な構成の説明については省略するが、一面３０ａと他面３０ｂと間に電流が流れるように、一面３０ａ側に一面電極およびゲート配線等が形成され、他面３０ｂ側に他面電極が形成されている。
　また、本実施形態の半導体チップ３０は、一面３０ａ側が凸となるように反った状態となっている。そして、半導体チップ３０の一面３０ａ側は、一面電極やゲート配線等の異なる部材が形成されているため、凸部３１が形成された状態となっている。つまり、半導体チップ３０は、一面３０ａ側が凸となるように反りつつ、当該一面に凸部３１が形成された状態となっている。例えば、半導体チップ３０の一面３０ａ側は、ゲート配線が保護膜に被覆された部分が凸部３１となり、凸部３１の外表面が保護膜にて構成されている。そして、半導体チップ３０の一面３０ａ側は、一面電極が凸部３１（すなわち、保護膜）から露出した状態となっている。一方、半導体チップ３０の他面３０ｂ側は、全体的に他面電極が形成されている。以下では、半導体チップ３０の一面３０ａ側の凸部３１を、単に半導体チップ３０の凸部３１ともいう。
　そして、半導体チップ３０は、他面３０ｂが第１支持部材１０と対向すると共に一面３０ａが第２支持部材２０と対向する状態で第１支持部材１０と第２支持部材２０との間に配置されている。
　下層接合部材４０は、第１支持部材１０と半導体チップ３０との間において、第１支持部材１０と半導体チップ３０の他面３０ｂ側に形成されている他面電極とを電気的、機械的に接続するように配置されている。本実施形態では、下層接合部材４０は、銀粒子が加圧焼結された加圧焼結層で構成されている。
　上層接合部材５０は、第２支持部材２０と半導体チップ３０との間において、第２支持部材２０と半導体チップ３０の一面３０ａ側に形成されている一面電極とを電気的、機械的に接続するように配置されている。
　具体的には、上層接合部材５０は、第１加圧焼結層６１、中間金属層７１、第２加圧焼結層６２、中間金属層７２、第３加圧焼結層６３が半導体チップ３０側から順に積層された構成とされている。つまり、上層接合部材５０は、第１支持部材１０と第２支持部材２０との積層方向において、中間金属層７１、７２が第１～第３加圧焼結層６１～６３で挟まれた状態となっている。
　なお、本実施形態では、第１～第３加圧焼結層６１～６３は、銀粒子が加圧焼結された加圧焼結層で構成されている。中間金属層７１、７２は、銀のバルク金属層によって構成されており、第１～第３加圧焼結層６１～６３よりも原子密度が高くなっている。
　そして、上層接合部材５０は、第１加圧焼結層６１が半導体チップ３０の隣合う凸部３１の間を埋め込むように、隣合う凸部３１の間に入り込みつつ、凸部３１と接触するように配置されている。つまり、半導体チップ３０は、隣合う凸部３１の間から露出する部分（例えば、一面電極）の全体が第１加圧焼結層６１と接合されている。
　以上が本実施形態における半導体装置の構成である。次に、上記半導体装置の製造方法について、図２Ａ～図２Ｅを参照しつつ説明する。なお、以下の製造方法は、ＢＥＳｉＰ（Build Even Surface in Processの略）法とも称され得る。
　まず、図２Ａに示されるように、一面３０ａ側に凸部３１が形成された半導体チップ３０を用意する。なお、本実施形態の半導体チップ３０は、上記のように、一面３０ａ側が凸となる状態で反っている。つまり、本実施形態の半導体チップ３０は、一面３０ａ側が凸となるように反りつつ、当該一面３０ａに凸部３１が形成された状態となっている。
　そして、第１支持部材１０上に、焼結材料としての銀粒子を含む下層シート１００を介して半導体チップ３０を配置する。本実施形態では、半導体チップ３０の他面３０ｂに下層シート１００を転写しておき、当該下層シート１００を介して第１支持部材１０上に半導体チップ３０を配置する。この場合、搬送時等に各部材がずれることを抑制するため、第１支持部材１０と下層シート１００との間に滑り止め用のタック材を配置するようにしてもよい。タック材は、例えば、焼結銀ペーストや、当該焼結銀ペーストを構成するための溶媒等が用いられる。
　なお、本実施形態では、下層シート１００が下層接合材料に相当する。また、半導体チップ３０の他面３０ｂに下層シート１００を転写する場合、例えば、次の方法が採用される。すなわち、まず、下層シート１００を構成するための銀粒子を含む焼結材料を治具上等に配置する。この場合、焼結材料は、ペースト状であってもよいし、シート状であってもよい。そして、半導体チップ３０の他面３０ｂを焼結材料に接触させ、加熱しながら加圧する。これにより、半導体チップ３０の他面３０ｂに焼結材料が転写され、半導体チップ３０の他面３０ｂに下層シート１００が配置される。なお、転写する際の加熱温度や加圧力は、転写された下層シート１００が未焼結の状態となるように調整される。
　次に、図２Ｂに示されるように、半導体チップ３０の一面３０ａ側に、第１構成材料１１０を配置する。本実施形態では、第１構成材料１１０は、焼結材料としての銀粒子を含む第１シート１１１および第２シート１１２と、支持層となる中間金属層７１とを有し、第１シート１１１と第２シート１１２との間に中間金属層７１が配置された構成とされている。つまり、本実施形態の第１構成材料１１０は、取り扱いに優れるプリフォーム形態の材料を実現するため、支持層となる中間金属層７１の表裏面に、第１シート１１１および第２シート１１２を配置した３層構造のプリフォーム構造とされている。そして、第１構成材料１１０は、第１シート１１１が半導体チップ３０側となるように配置される。この場合、搬送時等に各部材がずれることを抑制するため、半導体チップ３０と第１構成材料１１０との間に滑り止め用のタック材を配置するようにしてもよい。タック材は、例えば、焼結銀ペーストや、当該焼結銀ペーストを構成するための溶媒等が用いられる。
　なお、第１シート１１１および第２シート１１２は、銀粒子を含む銀ペーストから溶媒を蒸発させて除去した銀シートで構成されており、中間金属層７１に転写されて配置されている。但し、第１シート１１１および第２シート１１２は、未焼結の状態である。また、本実施形態の中間金属層７１は、上記のように銀のバルク金属層で構成されている。
　その後、図２Ｃに示されるように、半導体チップ３０および第１構成材料１１０を覆うように、緩衝部材２００を配置する。そして、加熱しつつ、緩衝部材２００を介して加圧装置２１０で加圧する。つまり、本実施形態では、下層シート１００および第１構成材料１１０を同時に加熱、加圧する。
　これにより、下層シート１００が加熱、加圧されて加圧焼結層である下層接合部材４０が構成され、下層接合部材４０を介して第１支持部材１０と半導体チップ３０とが接合される。
　また、第１構成材料１１０が加熱、加圧されて事前接合層５１が構成される。具体的には、第１構成材料１１０における第１シート１１１が加熱、加圧されて第１加圧焼結層６１が構成される。この際、第１加圧焼結層６１は、凸部３１の間に入り込むと共に凸部３１と接触するように変形しながら構成、配置される。この場合、第１構成材料１１０は、緩衝部材２００を介して加圧されるため、緩衝部材２００の変形によって均一な加圧が行われることで半導体チップ３０の凸部３１に応力が集中することが抑制される。したがって、半導体チップ３０が破壊されることを抑制できる。
　さらに、第１構成材料１１０における第２シート１１２が加熱、加圧され、第２加圧焼結層６２のうちの半導体チップ３０側の部分である第２下層加圧焼結層６２ａが構成される。この際、第２下層加圧焼結層６２ａは、緩衝部材２００を介して加圧装置２１０で加圧されるため、半導体チップ３０側と反対側の面が平坦となる。
　これにより、半導体チップ３０の一面３０ａ上には、半導体チップ３０の一面３０ａと接合されつつ、半導体チップ３０側と反対側の面が平坦とされた事前接合層５１が配置された状態となる。
　次に、図２Ｄに示されるように、事前接合層５１上に、第２構成材料１２０を介して第２支持部材２０を配置する。本実施形態の第２構成材料１２０は、第１構成材料１１０と同様の構成とされている。すなわち、第２構成材料１２０は、焼結材料としての銀粒子を含む第１シート１２１および第２シート１２２と、中間金属層７２とを有し、第１シート１２１と第２シート１２２との間に中間金属層７２が配置された構成とされている。つまり、本実施形態の第２構成材料１２０は、取り扱いに優れるプリフォーム形態の材料を実現するため、支持層となる中間金属層７２の表裏面に、第１シート１２１および第２シート１２２を配置した３層構造のプリフォーム構造とされている。そして、第２構成材料１２０は、第１シート１２１が事前接合層５１側となるように配置される。この場合、搬送時等に各部材がずれることを抑制するため、事前接合層５１と第２構成材料１２０との間に滑り止め用のタック材を配置するようにしてもよい。タック材は、例えば、焼結銀ペーストや、当該焼結銀ペーストを構成するための溶媒等が用いられる。
　続いて、図２Ｅに示されるように、加熱しつつ、加圧装置２１０で加圧する。これにより、第２構成材料１２０における第１シート１２１が加圧焼結され、第２下層加圧焼結層６２ａと共に第２加圧焼結層６２が構成される。また、第２構成材料１２０における第２シート１２２が加圧焼結されて第３加圧焼結層６３が構成される。これにより、上記図１に示す半導体装置が製造される。
　この際、事前接合層５１は、半導体チップ３０側と反対側の面が平坦な面とされているため、接合される部分の全体が均一に加圧される。このため、この加圧によって凸部３１に応力集中が発生することも抑制できる。つまり、本実施形態では、上層接合部材５０を構成するための加圧を行う際、半導体チップ３０の凸部３１に応力集中が発生することを抑制できる。したがって、半導体チップ３０が破壊されることを抑制できる。
　以上説明した本実施形態によれば、半導体チップ３０上に第２支持部材２０を配置する前に、凸部３１の間に入り込むと共に凸部３１と接触し、半導体チップ３０側と反対側の面が平坦化された事前接合層５１を配置している。そして、事前接合層５１上に第２構成材料１２０を介して第２支持部材２０を配置し、加熱、加圧することにより、事前接合層５１と共に、加圧焼結層を含む上層接合部材５０を構成している。
　この際、半導体チップ３０側と反対側の面が平坦化された事前接合層５１が配置されており、事前接合層５１には、接合される部分の全体が均一に加圧される。このため、半導体チップ３０の凸部３１に応力が集中することを抑制でき、半導体チップ３０が破壊されることを抑制できる。また、上層接合部材５０は、凸部３１の間に入り込むと共に凸部３１と接触するように配置されているため、半導体チップ３０との接合面積の向上を図ることができる。このため、半導体チップ３０と第２支持部材２０との接合信頼性および熱伝導性の向上を図ることができる。
　また、事前接合層５１は、半導体チップ３０上に第１構成材料１１０を配置し、緩衝部材２００を介して第１構成材料１１０が加熱、加圧されることで構成される。このため、この加圧の際にも半導体チップ３０の凸部３１に応力が集中することを抑制でき、半導体チップ３０が破壊されることを抑制できる。
　また、本実施形態では、下層シート１００を加熱、加圧して下層接合部材４０を構成することと、第１構成材料１１０を加熱、加圧して事前接合層５１を構成することとを同時に行っている。このため、製造工程の簡略化を図ることができる。
　さらに、本実施形態では、上層接合部材５０は、加圧焼結層で構成される第１～第３加圧焼結層６１～６３と、中間金属層７１、７２とを有する構成とされている。そして、本実施形態の中間金属層７１、７２は、バルク金属層で構成されている。このため、例えば、上層接合部材５０が第１～第３加圧焼結層６１～６３のみで構成されている場合と比較して、原子密度の高い中間金属層７１、７２が配置されているため、熱伝導性の向上をさらに図ることができる。この場合、本実施形態では、複数の中間金属層７１、７２を配置しているため、さらに熱伝導性の向上を図ることができる。
　また、上層接合部材５０は、支持層となる中間金属層７１、７２を有する構成とされており、第１～第３加圧焼結層６１～６３のみで構成されている場合と比較して、厚みを調整し易くなる。このため、上層接合部材５０で緩和される応力設計値の調整を容易にでき、設計の自由度の向上を図ることもできる。
　（他の実施形態）
　本開示は、実施形態に準拠して記述されたが、本開示は当該実施形態や構造に限定されるものではないと理解される。本開示は、様々な変形例や均等範囲内の変形をも包含する。加えて、様々な組み合わせや形態、さらには、それらに一要素のみ、それ以上、あるいはそれ以下、を含む他の組み合わせや形態をも、本開示の範疇や思想範囲に入るものである。
　例えば、上記第１実施形態において、上層接合部材５０は、中間金属層７１、７２を備えず、加圧焼結層のみで構成されていてもよい。
　また、上記第１実施形態において、上層接合部材５０は、例えば、１つの中間金属層を有する構成としてもよいし、３つ以上の中間金属層を有する構成としてもよい。
　さらに、上記第１実施形態において、中間金属層７１、７２は、銀のバルク金属層ではなく、銅やアルミニウム等のバルク金属層で構成されていてもよい。つまり、中間金属層７１、７２は、第１～第３加圧焼結層６１～６３と異なる金属で構成されていてもよい。そして、中間金属層７１、７２を第１～第３加圧焼結層６１～６３と異なる材料を用いて構成した場合には、中間金属層７１、７２を第１～第３加圧焼結層６１～６３と同じ材料を用いて構成した場合と比較して、中間金属層７１、７２と第１～第３加圧焼結層６１～６３との接合性を低下させることができる。このため、半導体チップ３０に何らかの不具合が発生した際、中間金属層７１、７２と第１～第３加圧焼結層６１～６３との接合界面で破壊され易くなり、半導体チップ３０が破壊されることを抑制できる。なお、中間金属層７１、７２を第１～第３加圧焼結層６１～６３と同じ材料を用いて構成した場合には、中間金属層７１、７２と第１～第３加圧焼結層６１～６３との接合性を向上させることができる。
　また、上記第１実施形態において、中間金属層７１、７２は、銀または銅を主成分とする焼結層によって構成されていてもよい。この場合、上記図２Ｂの第１構成材料１１０を配置する際には、予め焼結反応させてフィルム状とした焼結層を中間金属層７１とし、当該中間金属層７１が第１シート１１１および第２シート１１２で挟まれた第１構成材料１１０が配置される。同様に、上記図２Ｄの第２構成材料１２０を配置する際には、予め焼結反応させてフィルム状とした焼結層を中間金属層７２とし、当該中間金属層７２が第１シート１２１および第２シート１２２で挟まれた第２構成材料１２０が配置される。
　これによれば、中間金属層７１、７２を構成する焼結層が第１シート１１１、１２１および第２シート１２１、１２２よりも原子密度が高くなるようにした場合には、熱伝導性の向上を図ることができる。また、中間金属層７１、７２を構成する焼結層が第１シート１１１、１２１および第２シート１２１、１２２よりも原子密度が低くなるようにした場合には、中間金属層７１、７２を低弾性率な接合層とできる。このため、半導体チップ３０への発生応力を低減でき、信頼性の向上を図ることができる。また、中間金属層７１、７２が低弾性率な接合層とされている場合には、中間金属層７１、７２の強度が小さくなる。このため、半導体装置に何らかの不具合が発生した際には、中間金属層７１、７２が破壊されることで半導体チップ３０が破壊されることを抑制できる。
　さらに、上記第１実施形態において、第１構成材料１１０は、第１、第２シート１１１、１１２を含むものではなく、銀粒子がアルコールやエチレングリコール等の溶媒に混入されて構成される銀ペーストを含む構成とされていてもよい。また、第１構成材料１１０は、中間金属層７１を備えず、第１シート１１１または銀ペーストのみで構成されていてもよい。同様に、第２構成材料１２０は、第１、第２シート１２１、１２２を含むものではなく、銀粒子がアルコールやエチレングリコール等の溶媒に混入されて構成される銀ペーストを含む構成とされていてもよい。また、第２構成材料１２０は、中間金属層７２を備えず、第１シート１２１または銀ペーストのみで構成されていてもよい。
　そして、上記第１実施形態において、上層接合部材５０は、他の金属粒子を含む構成とされていてもよい。例えば、第１構成材料１１０は、銅粒子がアルコールやエチレングリコール等の溶媒に混入されて構成される銅ペーストを含む構成とされていてもよいし、銅ペーストから溶媒が除去された銅シートで構成されていてもよい。同様に、第２構成材料１２０は、銅粒子がアルコールやエチレングリコール等の溶媒に混入されて構成される銅ペーストを含む構成とされていてもよいし、銅ペーストから溶媒が除去された銅シートで構成されていてもよい。この場合、中間金属層７１、７２は、銀で構成されていてもよいし、銅、またはアルミニウムで構成されていてもよい。
　さらに、上記第１実施形態において、下層接合部材４０は、上記上層接合部材５０と同様に、銅を含む構成とされていてもよい。
　また、上記第１実施形態において、第１支持部材１０上に下層シート１００を介して半導体チップ３０を配置する際には、次のようにしてもよい。すなわち、第１支持部材１０上に半導体チップ３０と別体とされた下層シート１００を配置した後、当該下層シート１００上に半導体チップ３０を配置するようにしてもよい。
　そして、上記第１実施形態において、下層シート１００を加熱、加圧して下層接合部材４０を構成することと、第１構成材料１１０を加熱、加圧して事前接合層５１を構成することとは、別工程で行われるようにしてもよい。
　また、上記第１実施形態では、半導体チップ３０が一面３０ａ側に凸となるように反っている例について説明した。しかしながら、半導体チップ３０は、他面３０ｂ側が凸となるように反っていてもよい。このような半導体チップ３０を用いて半導体装置を製造する場合においても、一面３０ａ側に凸部３１が形成されるため、上記第１実施形態と同様の製造方法を行うことにより、上記第１実施形態と同様の効果を得ることができる。
　さらに、上記第１実施形態では、事前接合層５１が半導体チップ３０の凸部３１の間から露出する一面電極と接続される例について説明した。しかしながら、半導体チップ３０は、凸部３１の間と異なる部分からゲートパッドが露出する場合もある。このため、このゲートパッド上にも事前接合層が構成されるようにしてもよい。但し、ゲートパッド上に事前接合層を配置する場合、凸部３１の間から露出する一面電極と接合される事前接合層５１と、凸部３１の間と異なる部分に配置されるゲートパッドと接続される事前接合層とは、絶縁される必要がある。そして、ゲートパッド上に事前接合層を配置した場合には、ゲートパッドと接続される事前接合層に対し、外部回路と接続されるワイヤや端子部等を接続するようにしてもよい。なお、ゲートパッドと接続される事前接合層を構成する場合には、当該事前接合層を一面電極と接続される事前接合層５１を構成する工程と同時に行うことにより、製造工程の簡略化を図ることができる。

Claims (6)

  1. 　対向する第１支持部材（１０）と第２支持部材（２０）との間に半導体チップ（３０）が配置された半導体装置の製造方法であって、
    　一面（３０ａ）および前記一面と反対側の他面（３０ｂ）を有し、前記一面側に凸部（３１）が構成された前記半導体チップを用意することと、
    　前記半導体チップの他面が前記第１支持部材と対向するように、前記第１支持部材と前記半導体チップの他面とを加圧焼結層を含む下層接合部材（４０）を介して接合することと、
    　前記半導体チップの一面が前記第２支持部材と対向するように、前記第２支持部材と前記半導体チップの一面とを加圧焼結層を含む上層接合部材（５０）を介して接合することと、を行い、
    　前記上層接合部材を介して接合することでは、
    　前記半導体チップの一面上に、焼結材料を含む第１構成材料（１１０）が加圧焼結されることで構成され、前記凸部の間に入り込むと共に前記凸部と接触しており、前記半導体チップ側と反対側の面が平坦化された事前接合層（５１）を配置することと、
    　前記事前接合層上に、焼結材料を含む第２構成材料（１２０）を介して前記第２支持部材を配置することと、
    　加熱しながら加圧して前記第２構成材料を加圧焼結することにより、前記事前接合層と共に前記上層接合部材を構成することと、を行う半導体装置の製造方法。
  2. 　前記事前接合層を配置することでは、前記半導体チップの一面側に前記第１構成材料を配置することと、加熱しながら緩衝部材（２００）を介して前記第１構成材料を加圧することにより、前記第１構成材料から前記事前接合層を構成することと、を行う請求項１に記載の半導体装置の製造方法。
  3. 　前記下層接合部材を介して接合することでは、前記第１支持部材上に、焼結材料を含む下層接合材料（１００）を介して前記半導体チップを配置することと、加熱しながら加圧することにより、前記下層接合材料から前記下層接合部材を構成することと、を行い、
    　前記下層接合材料から前記下層接合部材を構成することにおける加圧することは、前記第１構成材料から前記事前接合層を構成することにおける加圧することと同じ工程で行う請求項２に記載の半導体装置の製造方法。
  4. 　前記第１構成材料は、銀粒子が溶媒に混入している銀ペースト、前記銀ペーストから溶媒が除去された銀シート、支持層となる中間金属層（７１）が前記銀シートに挟まれたプリフォーム構造、銅粒子が溶媒に混入している銅ペースト、前記銅ペーストから溶媒が除去された銅シート、および支持層となる中間金属層（７１）が前記銅シートに挟まれたプリフォーム構造のいずれかで構成され、
    　前記中間金属層は、銀、銅、およびアルミニウムのいずれかのバルク金属層、または銀もしくは銅を主成分とする焼結層のいずれかで構成されている請求項１ないし３のいずれか１つに記載の半導体装置の製造方法。
  5. 　対向する第１支持部材（１０）と第２支持部材（２０）との間に半導体チップ（３０）が配置された半導体装置であって、
    　前記第１支持部材と、
    　前記第２支持部材と、
    　一面（３０ａ）および前記一面と反対側の他面（３０ｂ）を有し、前記一面側に凸部（３１）が構成され、前記一面が前記第１支持部材と対向すると共に前記他面が前記第２支持部材と対向する状態で前記第１支持部材と前記第２支持部材との間に配置される前記半導体チップと、
    　前記第１支持部材と前記半導体チップとの間に配置され、加圧焼結層で構成される下層接合部材（４０）と、
    　前記第２支持部材と前記半導体チップとの間に配置された上層接合部材（５０）と、を備え、
    　前記上層接合部材は、支持層となる中間金属層（７１、７２）と、前記第１支持部材と前記第２支持部材との積層方向において前記中間金属層を挟むように配置され、加圧焼結層で構成される焼結層（６１～６３）とを有し、
    　前記半導体チップ側の焼結層は、前記半導体チップと前記中間金属層とを接合すると共に、前記凸部の間に入り込みつつ前記凸部と接触するように配置され、
    　前記第２支持部材側の焼結層は、前記中間金属層と前記第２支持部材とを接合する半導体装置。
  6. 　前記上層接合部材は、複数の前記中間金属層を有している請求項５に記載の半導体装置。
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JPH11135892A (ja) * 1997-10-30 1999-05-21 Victor Co Of Japan Ltd 半導体レ−ザ装置
WO2009157160A1 (ja) * 2008-06-25 2009-12-30 パナソニック株式会社 実装構造体、及び実装構造体の製造方法
JP2018129352A (ja) * 2017-02-07 2018-08-16 三菱電機株式会社 電力用半導体装置およびそれを用いた電力変換装置

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Publication number Priority date Publication date Assignee Title
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