WO2021145110A1 - 保持装置 - Google Patents
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- WO2021145110A1 WO2021145110A1 PCT/JP2020/046048 JP2020046048W WO2021145110A1 WO 2021145110 A1 WO2021145110 A1 WO 2021145110A1 JP 2020046048 W JP2020046048 W JP 2020046048W WO 2021145110 A1 WO2021145110 A1 WO 2021145110A1
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- tubular member
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- flange portion
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- outer edge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- This specification discloses a technique capable of solving the above-mentioned problems.
- the holding device disclosed in the present specification includes a plate-shaped member having a first surface substantially orthogonal to the first direction and a second surface opposite to the first surface.
- a tubular member having a flange portion that protrudes in a direction substantially orthogonal to the first direction and has a first through hole extending in the first direction is provided.
- a connecting member arranged on the other side of the tubular member in the first direction in a holding device for holding an object on the first surface of the plate-shaped member.
- the entire outer edge line of the fourth surface of the tubular member may not be in contact with the third surface of the connecting member. According to such a configuration, it is possible to more reliably suppress the occurrence of chipping of the tubular member.
- a recess (a portion recessed upward) 97 is formed on the lower surface S6 of each spacer 90.
- the recess 97 is located at a position where a strip-shaped outer peripheral portion 97a having a substantially constant width along the entire outer circumference of the lower surface S6 of each spacer 90 and a through hole 95 formed from the outer peripheral portion 97a in the Z-axis direction. It is composed of a substantially rectangular inner portion 97b extending inward toward the outside. As shown in FIGS.
- the entire outer edge line Lx of the lower surface S4 of the tubular member 20 is not in contact with the upper surface S3 of the connecting member 80. Therefore, according to the heating device 100 of the present embodiment, it is possible to more reliably suppress the occurrence of chipping of the tubular member 20.
- the outer peripheral portion Lx1 of the outer edge line Lx of the lower surface S4 of the tubular member 20 is not in contact with the upper surface S3 of the connecting member 80, so that between the two members described above. Even when a slight inclination occurs, it is possible to prevent the outer peripheral portion Lx1 of the outer edge line Lx of the lower surface S4 of the tubular member 20 from coming into contact with the connecting member 80, and as a result, the tubular member 20 is chipped. Can be suppressed.
- the through hole 26 and the connecting member of the tubular member 20 are formed.
- these holes may be absent, or holes for forming other spaces may be formed.
Abstract
Description
A-1.加熱装置100の構成:
図1は、本実施形態における加熱装置100の外観構成を概略的に示す斜視図であり、図2は、本実施形態における加熱装置100の断面構成を概略的に示す説明図である。図2には、後述する図3~図8のII-IIの位置における加熱装置100のXZ断面構成が示されている。各図には、方向を特定するための互いに直交するXYZ軸が示されている。本明細書では、便宜的に、Z軸正方向を上方向といい、Z軸負方向を下方向というものとするが、加熱装置100は実際にはそのような向きとは異なる向きで設置されてもよい。
次に、本実施形態の加熱装置100における管状部材20と接続部材80との接合箇所付近の詳細構成について説明する。図3は、管状部材20の下面S4の構成を示す説明図であり、図4は、管状部材20の断面構成を示す説明図であり、図5は、接続部材80の上面S3の構成を示す説明図であり、図6は、接続部材80の断面構成を示す説明図であり、図7は、後述するスペーサ90の下面S6の構成を示す説明図であり、図8はスペーサ90の断面構成を示す説明図である。図4には、図2のIV-IVの位置における管状部材20のXY断面構成が示されており、図6には、図2のVI-VIの位置における接続部材80のXY断面構成が示されており、図8には、図2のVIII-VIIIの位置におけるスペーサ90のXY断面構成が示されている。
本実施形態の加熱装置100では、接続部材80の上面S3に凹凸が形成されており、その結果、管状部材20の下面S4の一部分は、接続部材80の上面S3に接しており、管状部材20の下面S4の残りの一部分は、接続部材80の上面S3に接していない。以下、この点について、詳細に説明する。
本実施形態の加熱装置100では、各スペーサ90の下面S6に凹凸が形成されており、その結果、管状部材20の下側フランジ部23の上面S5の一部分は、各スペーサ90の下面S6に接しており、管状部材20の下側フランジ部23の上面S5の残りの一部分は、各スペーサ90の下面S6に接していない。以下、この点について、詳細に説明する。なお、管状部材20の下側フランジ部23の上面S5は、特許請求の範囲における第5の表面に相当し、スペーサ90の下面S6は、特許請求の範囲における第6の表面に相当する。
以上説明したように、本実施形態の加熱装置100は、Z軸方向に略直交する保持面S1と保持面S1とは反対側の裏面S2とを有する板状部材10と、Z軸方向に延び、セラミックスにより形成された管状部材20とを備え、板状部材10の保持面S1上に対象物を保持する保持装置である。管状部材20は、上側の端部において板状部材10の裏面S2に接合され、下側の端部に、面方向に突出する下側フランジ部23を有する。下側フランジ部23には、Z軸方向に延びる貫通孔25が形成されている。また、本実施形態の加熱装置100は、さらに、管状部材20の下側に配置された接続部材80を備える。接続部材80には、接続部材80の上面S3に開口するようにボルト孔85が形成されている。このボルト孔85には、管状部材20の下側フランジ部23の貫通孔25に挿通されたボルト99が螺号する。また、本実施形態の加熱装置100では、管状部材20の下面S4の一部分は、接続部材80の上面S3に接しており、かつ、管状部材20の下面S4の外縁線Lxの内、該下面S4を包含する最小の仮想円VCに重なる部分である外周部分Lx1は、接続部材80の上面S3に接していない。
本明細書で開示される技術は、上述の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の形態に変形することができ、例えば次のような変形も可能である。
Claims (7)
- 第1の方向に略直交する第1の表面と、前記第1の表面とは反対側の第2の表面と、を有する板状部材と、
前記第1の方向に延び、セラミックスにより形成された管状部材であって、前記第1の方向の一方側の端部において前記板状部材の前記第2の表面に接合され、前記第1の方向の他方側の端部に、前記第1の方向に略直交する方向に突出し、かつ、前記第1の方向に延びる第1の貫通孔が形成されたフランジ部を有する管状部材と、
を備え、前記板状部材の前記第1の表面上に対象物を保持する保持装置において、さらに、
前記管状部材における、前記第1の方向の前記他方側に配置された接続部材であって、前記第1の方向の前記一方側の端面である第3の表面に開口するように、前記フランジ部の前記第1の貫通孔に挿通された締結部材が螺号する孔が形成された接続部材を備え、
前記管状部材における前記第1の方向の前記他方側の端面である第4の表面の一部分は、前記接続部材の前記第3の表面に接しており、かつ、前記管状部材の前記第4の表面の外縁線の内、前記第4の表面を包含する最小の仮想円に重なる部分である特定部分は、前記接続部材の前記第3の表面に接していない、
ことを特徴とする保持装置。 - 請求項1に記載の保持装置において、
前記管状部材の前記第4の表面の前記外縁線の全体が、前記接続部材の前記第3の表面に接していない、
ことを特徴とする保持装置。 - 請求項1または請求項2に記載の保持装置において、
前記接続部材の前記第3の表面には、前記第1の方向視で前記管状部材の前記第4の表面の前記外縁線の前記特定部分に重なる部分が存在し、
前記第1の方向において、前記接続部材の前記第3の表面と、前記管状部材の前記第4の表面の前記外縁線の前記特定部分とは、離間している、
ことを特徴とする保持装置。 - 請求項1から請求項3までのいずれか一項に記載の保持装置において、さらに、
前記フランジ部に対して前記第1の方向の前記一方側に配置されたスペーサであって、前記フランジ部の前記第1の貫通孔に連通し、かつ、前記締結部材が挿通される第2の貫通孔が形成されたスペーサを備え、
前記フランジ部における前記第1の方向の前記一方側の端面である第5の表面の一部分は、前記スペーサにおける前記第1の方向の前記他方側の端面である第6の表面に接しており、かつ、前記フランジ部の前記第5の表面の外縁線の全体が、前記スペーサの前記第6の表面に接していない、
ことを特徴とする保持装置。 - 請求項1から請求項4までのいずれか一項に記載の保持装置において、
前記管状部材の前記フランジ部には、複数の前記第1の貫通孔が形成されており、
前記接続部材には、前記フランジ部の複数の前記第1の貫通孔に挿通された複数の前記締結部材が螺号する複数の前記孔が形成されている、
ことを特徴とする保持装置。 - 請求項1から請求項5までのいずれか一項に記載の保持装置において、さらに、
前記締結部材を備える、
ことを特徴とする保持装置。 - 請求項1から請求項6までのいずれか一項に記載の保持装置において、さらに、
前記板状部材の内部に配置された内部電極を備える、
ことを特徴とする保持装置。
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CN202080041982.2A CN113939904A (zh) | 2020-01-15 | 2020-12-10 | 保持装置 |
JP2021547083A JP7146108B2 (ja) | 2020-01-15 | 2020-12-10 | 保持装置 |
US17/607,241 US20220223438A1 (en) | 2020-01-15 | 2020-12-10 | Holding device |
KR1020217034152A KR102645912B1 (ko) | 2020-01-15 | 2020-12-10 | 유지 장치 |
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US (1) | US20220223438A1 (ja) |
JP (1) | JP7146108B2 (ja) |
KR (1) | KR102645912B1 (ja) |
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- 2020-12-10 US US17/607,241 patent/US20220223438A1/en active Pending
- 2020-12-10 KR KR1020217034152A patent/KR102645912B1/ko active IP Right Grant
- 2020-12-10 JP JP2021547083A patent/JP7146108B2/ja active Active
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KR20210141662A (ko) | 2021-11-23 |
US20220223438A1 (en) | 2022-07-14 |
TW202141680A (zh) | 2021-11-01 |
JPWO2021145110A1 (ja) | 2021-07-22 |
CN113939904A (zh) | 2022-01-14 |
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