WO2021132680A1 - Kit et procédé de fabrication de puce à semi-conducteur - Google Patents

Kit et procédé de fabrication de puce à semi-conducteur Download PDF

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Publication number
WO2021132680A1
WO2021132680A1 PCT/JP2020/049015 JP2020049015W WO2021132680A1 WO 2021132680 A1 WO2021132680 A1 WO 2021132680A1 JP 2020049015 W JP2020049015 W JP 2020049015W WO 2021132680 A1 WO2021132680 A1 WO 2021132680A1
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WIPO (PCT)
Prior art keywords
resin film
semiconductor chip
curable resin
manufacturing
wafer
Prior art date
Application number
PCT/JP2020/049015
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English (en)
Japanese (ja)
Inventor
智則 篠田
拓 根本
桜子 田村
友尭 森下
圭亮 四宮
Original Assignee
リンテック株式会社
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Publication date
Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to KR1020227021696A priority Critical patent/KR20220122999A/ko
Priority to JP2021533133A priority patent/JP7033237B2/ja
Priority to CN202080090569.5A priority patent/CN114930503A/zh
Publication of WO2021132680A1 publication Critical patent/WO2021132680A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/26—Layered products comprising a layer of synthetic resin characterised by the use of special additives using curing agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/26—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the lamination process, e.g. release layers or pressure equalising layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/26—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the lamination process, e.g. release layers or pressure equalising layers
    • B32B2037/268—Release layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Definitions

  • the present invention relates to a method for manufacturing a kit and a semiconductor chip. More specifically, the present invention relates to a kit containing a curable resin film for forming a curable resin film on a semiconductor chip, and a method for manufacturing a semiconductor chip using the kit.
  • the semiconductor chip is formed by laminating a semiconductor chip having bumps on the circuit surface and a substrate for mounting the semiconductor chip so that the circuit surface of the semiconductor chip and the substrate face each other. It is mounted on the substrate.
  • the semiconductor chip is usually obtained by fragmenting a semiconductor wafer having bumps on the circuit surface.
  • the semiconductor wafer provided with the bump may be provided with a protective film for the purpose of protecting the joint portion between the bump and the semiconductor wafer (hereinafter, also referred to as “bump neck”).
  • a protective film for the purpose of protecting the joint portion between the bump and the semiconductor wafer (hereinafter, also referred to as “bump neck”).
  • a laminate in which a supporting base material, an adhesive layer, and a thermosetting resin layer are laminated in this order is used as a bonding surface of the thermosetting resin layer.
  • a protective film is formed by pressing and sticking to the bump forming surface of a semiconductor wafer provided with bumps, and then heating and curing the thermosetting resin layer.
  • the present inventors provided a protective film provided for the purpose of protecting the bump neck not only on the bump forming surface of the semiconductor chip but also on the side surface, and further on the surface (back surface) opposite to the pump forming surface.
  • a protective film By covering the entire surface of the semiconductor chip with a protective film, the strength of the semiconductor chip can be improved, the peeling of the protective film can be suppressed, and an extremely rational configuration can be constructed.
  • the present invention has been made based on such an idea, and includes a kit containing a curable resin film capable of improving the strength of a semiconductor chip and suppressing peeling of a protective film, and the kit.
  • An object of the present invention is to provide a method for manufacturing a semiconductor chip that is used.
  • Step / Step (T) of Forming Film (r1) Using the second curable resin film (x2) of the kit, a first protective film is used on the surface of the semiconductor chip opposite to the bump forming surface. Step of forming a dicurable resin film (r2) [7] The method for manufacturing a semiconductor chip according to the above [6].
  • the step (S) includes the following steps (S1) to (S4) in this order.
  • Step (S1) A step of preparing a wafer for manufacturing a semiconductor chip, in which a groove portion as a planned division line is formed on the bump forming surface of a semiconductor wafer having a bump forming surface having bumps without reaching the back surface.
  • Step (S2) The first curable resin (x1) of the kit is pressed and attached to the bump forming surface of the semiconductor chip manufacturing wafer, and the bump forming surface of the semiconductor chip manufacturing wafer is first.
  • step (S) is performed after the step (S2) and before the step (S3), after the step (S3) and before the step (S4).
  • a method for manufacturing a semiconductor chip which comprises the following step (S-BG).
  • a first support sheet (Y1) is formed on the bump forming surface of the semiconductor chip manufacturing wafer.
  • the first composite sheet ( ⁇ 1) having a laminated structure in which the layer (X1) of the first curable resin (x1) is laminated, by pressing the layer (X1) as a sticking surface and sticking the first composite sheet ( ⁇ 1).
  • the step (S-BG) is included after the step (S2) and before the step (S3).
  • the back surface of the semiconductor chip manufacturing wafer is ground with the first composite sheet ( ⁇ 1) attached, and then the first composite sheet ( ⁇ 1) is used as the first support sheet. It is carried out by peeling off (Y1),
  • the step (S4) a portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove is formed along the planned division line.
  • the step (S-BG) is included after the step (S3) and before the step (S4).
  • the step (S3) was carried out without peeling the first support sheet (Y1) from the first composite sheet ( ⁇ 1).
  • the back surface of the semiconductor chip manufacturing wafer is ground with the first composite sheet ( ⁇ 1) attached, and then the first composite sheet ( ⁇ 1) is used as the first support sheet. It is carried out by peeling off (Y1)
  • a portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove is formed along the planned division line.
  • the step (S-BG) is included after the step (S3) and before the step (S4).
  • the first support sheet (Y1) is peeled off from the first composite sheet ( ⁇ 1).
  • a back grind sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1).
  • the back grind sheet (b-) is transferred from the semiconductor chip manufacturing wafer with the first cured resin film (r1).
  • step (S4) a portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove is formed along the planned division line.
  • step (S-BG) is included in the step (S4).
  • the first support sheet (Y1) is peeled off from the first composite sheet ( ⁇ 1).
  • a portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove is formed along the planned division line.
  • the first wafer for manufacturing a semiconductor chip with the first cured resin film (r1). By attaching a back grind sheet (b-BG) to the surface of the cured resin film (r1) and grinding the back surface of the semiconductor chip manufacturing wafer with the back grind sheet (b-BG) attached.
  • the step (T) includes the following steps (T1-1) and the following steps (T1-2) in this order.
  • Step (T1-1) After the step (S-BG) and before the step (S4), the second curable resin (x2) of the kit is placed on the back surface of the wafer for manufacturing semiconductor chips.
  • the second curable resin (x2) is cured to form the second curable resin film (r2).
  • Step (S4) a portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1), which is formed in the groove, is formed on the planned division line.
  • a method for producing a semiconductor chip which collectively cuts the second curable resin (x2) or the second curable resin film (r2) when cutting along the line.
  • the step (T) includes the following steps (T2-1) and the following steps (T2-2) in this order.
  • Step of Forming r2) Further, the step (T) is a production method including the following step (T2-3) before or after the step (T2-2).
  • the step (T) is a step of manufacturing the semiconductor chip.
  • a second composite sheet ( ⁇ 2) having a laminated structure in which a second support sheet (Y2) and a layer (X2) of the second curable resin (x2) are laminated on the back surface of the wafer is attached to the layer ( ⁇ 2).
  • kits including a curable resin film capable of improving the strength of a semiconductor chip and suppressing peeling of a protective film, and a method for manufacturing a semiconductor chip using the kit are provided. It becomes possible.
  • the term "active ingredient” refers to a component contained in a target composition excluding a diluting solvent such as water or an organic solvent.
  • the weight average molecular weight and the number average molecular weight are polystyrene-equivalent values measured by a gel permeation chromatography (GPC) method.
  • GPC gel permeation chromatography
  • the lower limit value and the upper limit value described stepwise can be combined independently. For example, from the description of "preferably 10 to 90, more preferably 30 to 60", the “favorable lower limit value (10)" and the “more preferable upper limit value (60)” are combined to obtain “10 to 60". You can also do it.
  • the kit of the present invention is a first curable resin film (r1) for forming a first curable resin film (r1) as a protective film on both the bump forming surface and the side surface of a semiconductor chip having a bump forming surface having bumps.
  • FIG. 1 shows a schematic cross-sectional view of a kit according to an aspect of the present invention.
  • the kit 1 of the present invention includes a first curable resin film (x1) and a second curable resin film (x2).
  • x1 first curable resin film
  • x2 second curable resin film
  • the main part may be enlarged and shown, and the dimensional ratio of each component is the same as the actual one. Is not always the case.
  • the first curable resin film (x1) shown in FIG. 1 includes a first release film 151 on one surface x1a (sometimes referred to as "first surface x1a” in the present specification).
  • the second release film 152 is provided on the other surface x1b (sometimes referred to as "second surface x1a” in the present specification) opposite to the first surface x1a.
  • the first curable resin film (x1) having such a structure is suitable for storage as, for example, a roll.
  • the second curable resin film (x2) shown in FIG. 1 includes a first release film 251 on one surface x2a (sometimes referred to as "first surface x2a" in the present specification).
  • a second release film 252 is provided on the other surface x2b (sometimes referred to as "second surface x2b" in the present specification) opposite to the first surface x2a.
  • the second curable resin film (x2) having such a structure is also suitable for storage as a roll, for example.
  • the first release films 151 and 251 and the second release films 152 and 252 may all be known.
  • the first release film 151 and the second release film 152 may be the same as each other or may be different from each other. Examples of cases where the first release film 151 and the second release film 152 are different include that the release force required for peeling from the first curable resin film (x1) is different.
  • the first release film 251 and the second release film 252 may be the same or different from each other.
  • first curable resin film (x1) shown in FIG. 1 either the first release film 151 or the second release film 152 is removed, and the resulting exposed surface becomes the surface to be attached to the object to be attached. Then, the other remaining of the first release film 151 and the second release film 152 is removed, and the generated exposed surface is attached with the first support sheet (Y1) for forming the first composite sheet ( ⁇ 1) described later. It becomes a face.
  • FIG. 1 shows an example in which the release film is provided on both sides (first surface x1a, second surface x1b) of the first curable resin film (x1), the release film is the first. It may be provided only on one side of the monocurable resin film (x1), that is, only on the first side x1a or only on the second side x1b.
  • the first release film 251 or the second release film 252 is removed, and the resulting exposed surface is attached to the object to be attached. It becomes a face. Then, the other remaining of the first release film 251 and the second release film 252 is removed, and the generated exposed surface is attached to the second support sheet (Y2) for forming the second composite sheet ( ⁇ 2) described later. It becomes a face.
  • FIG. 1 shows an example in which the release film is provided on both sides (first surface x2a, second surface x2b) of the second curable resin film (x2), the release film is the first.
  • the bicurable resin film (x2) may be provided on only one surface, that is, only the first surface x2a or only the second surface x2b.
  • first curable resin film (x1) and the second curable resin film (x2) constituting the kit of the present invention will be described in detail.
  • the kit of the present invention includes a first curable resin film (x1).
  • the first curable resin film (x1) is used for forming the first curable resin film (r1) as a protective film on both the bump forming surface and the side surface of the semiconductor chip having the bump forming surface provided with the bump. ..
  • the first curable resin film (x1) satisfies the following requirement (I).
  • ⁇ Requirement (I)> Under the conditions of a temperature of 90 ° C. and a frequency of 1 Hz, strain is generated in the test piece of the curable resin film having a diameter of 25 mm and a thickness of 1 mm, the storage elastic modulus of the test piece is measured, and the strain of the test piece is 1.
  • X calculated by the following formula (i) when the storage elastic modulus of the test piece is Gc1 and the storage elastic modulus of the test piece is Gc300 when the strain of the test piece is 300%. The value is 19 or more and less than 10,000.
  • X Gc1 / Gc300 ... (i)
  • the test piece for measuring the storage elastic modulus is in the form of a film, and its planar shape is circular.
  • the test piece may be a single-layer first-curable resin film (x1) having a thickness of 1 mm, but in terms of ease of production, a single-layer first-curable resin film having a thickness of less than 1 mm.
  • the laminated film is composed of a plurality of (x1) laminated.
  • the thicknesses of the plurality of single-layer first curable resin films (x1) constituting the laminated film may be the same, all may be different, or only some of them may be the same. However, it is preferable that they are all the same in that they are easy to prepare.
  • the "storage elastic modulus of the test piece” is a test piece of a resin film having a diameter of 25 mm and a thickness of 1 mm under the conditions of a temperature of 90 ° C. and a frequency of 1 Hz. It means the storage elastic modulus of the test piece corresponding to this strain when the strain is generated in.
  • the first curable resin film (x1) is, for example, a composite sheet having a laminated structure in which a first support sheet (Y1) and a first curable resin film (x1) are laminated (first composite sheet ( ⁇ 1)). Can be configured.
  • the first curable resin film (x1) may be either thermosetting or energy ray curable, and may have both thermosetting and energy ray curable properties.
  • the term "energy beam” means an electromagnetic wave or a charged particle beam having an energy quantum.
  • energy rays include ultraviolet rays, radiation, electron beams and the like.
  • Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet source.
  • the electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like.
  • energy ray curable means a property of being cured by irradiating with energy rays
  • non-energy ray curable is a property of not being cured by irradiating with energy rays.
  • the first curable resin film (x1) contains a resin component. Further, the first curable resin film (x1) may or may not contain a component other than the resin component together with the resin component. As described above as a preferred embodiment of the first curable resin film (x1), from the viewpoint of making it easier for the first curable resin film (x1) to satisfy the requirement (I), the first curable resin film (x1) is For example, a resin component, a filler, and various additives that do not correspond to any of these (resin component and filler) and have an effect of adjusting the storage elasticity of the first curable resin film (x1). , Is preferably contained.
  • Examples of the additive having the effect of adjusting the storage elastic modulus of the first curable resin film (x1) include a rheology control agent (thixotropic agent), a surfactant, and a silicone oil.
  • the first curable resin film (x1) is soft and is used for sticking to a sticking object having an uneven surface such as a wafer for forming a semiconductor chip having a bump forming surface having bumps and a groove as a planned division line. Is suitable as.
  • a wafer for manufacturing a semiconductor chip having a bump forming surface having bumps and a groove as a planned division line is also simply referred to as a “wafer for manufacturing a semiconductor chip”.
  • the first curable resin film (x1) in which the X value defined in the above requirement (I) is 19 or more and less than 10,000 is used, the following effects are more likely to be exhibited.
  • the first curable resin film (x1) is attached by pressing against the bump forming surface of the wafer for manufacturing semiconductor chips, so that the first curable resin film (x1) has good embedding property in the groove. It becomes easy to be filled. Further, the first curable resin film (x1) is attached by pressing against the bump forming surface of the wafer for manufacturing semiconductor chips so that the bumps penetrate the first curable resin film (x1) and the bumps are formed. The crown protrudes from the first curable resin film (x1). Then, the softened first curable resin film (x1) spreads between the bumps so as to cover the bumps, adheres to the bump forming surface, and covers the surface of the bump, particularly the surface of the portion near the bump forming surface.
  • the residual first curable resin film (x1) is likely to be suppressed in the upper part including the crown of the bump. Therefore, the adhesion of the first cured resin film (r1), which is a cured product of the first curable resin film (x1), is naturally easily suppressed at the upper part of the bump. Further, the first curable resin film (x1) is easy to maintain the area of the initial (before sticking) first curable resin film (x1) even after being stuck to the object to be stuck, and the initial (before sticking). The phenomenon in which the area after application is larger than the area of the first curable resin film (x1) (hereinafter, also referred to as “protruding”) is likely to be suppressed.
  • the first curable resin film (x1) when the first curable resin film (x1) is attached to the bump-forming surface of the wafer for manufacturing semiconductor chips, poor embedding in the groove or the base of the pump can be easily suppressed. Further, when the first curable resin film (x1) is used, the first curable resin film (x1) and the first cured resin film (r1) which is a cured product thereof are provided on the bump forming surface. Therefore, it becomes easy to prevent the region other than the upper portion of the bump or the region near the bump on the bump forming surface from being unintentionally exposed (hereinafter, also referred to as “repellent”).
  • the first curable resin film (x1) or the first curable resin film (r1) remains on the upper part of the bump is observed by, for example, observing the upper part of the bump with an optical microscope or a SEM (scanning electron microscope). It can be confirmed by acquiring the image data and the imaging data. Further, the presence or absence of protrusion of the first curable resin film (x1) and the presence or absence of repelling of the first curable resin film (x1) or the first curable resin film (r1) can be determined, for example, with respect to the bump forming surface with an optical microscope. Alternatively, it can be confirmed by observing with an SEM (scanning electron microscope) or acquiring imaging data.
  • the amount of protrusion can be calculated by the following method. That is, the resin film in a protruding state is viewed in a plan view from above, and the maximum value of the length of the line segment connecting two different points on the outer circumference of the resin film at this time is obtained. Further, the value of the width of the resin film at the beginning (that is, before the protrusion occurs) at the position overlapping with the line segment showing the maximum value is obtained. Then, the amount of protrusion of the resin film can be calculated by subtracting the value of the width of the resin film from the maximum value of the length of the line segment.
  • FIG. 2 is a plan view for schematically explaining the amount of protrusion of the resin film when the plane shape of the resin film is circular.
  • the resin film 101 shown in FIG. 2 is in a state of being attached to the object to be attached 102 and protruding from the initial size.
  • Reference numeral 101' is a resin film of the initial size, which is shown for convenience in order to make it easier to understand the amount of protrusion.
  • the initial planar shape of the resin film 101' is circular here, but the planar shape of the resin film 101 that is in a protruding state is non-circular. However, this is an example, and the planar shape of the resin film 101 in the protruding state is not limited to that shown here.
  • the value D 0 of the width of the initial resin film 101'at the position overlapping with the line segment showing the maximum value (that is, before exuding) may be obtained.
  • the difference between D 1 and D 0 (D 1 ⁇ D 0 ) is the amount of protrusion.
  • the line segment showing the maximum value in the resin film 101 may pass through the center of the circle in the initial resin film 101'in a plan view, and in that case, at a position overlapping the line segment showing the maximum value.
  • the value of the width of the initial resin film 101' is the diameter of the resin film 101'.
  • the amount of protrusion of the resin film when the plane shape of the resin film is circular has been described with reference to the drawings, but the same method can be used when the plane shape is other than circular.
  • the amount of protrusion can be calculated.
  • the upper part of the bump penetrates the first curable resin film (x1) and protrudes, and the first curable resin
  • the degree of distortion of the curable resin film is large between the middle stage where the film (x1) begins to invade the groove and the final stage where the first curable resin film (x1) embeds the base of the bump and embeds the groove. different. More specifically, the strain of the first curable resin film (x1) in the middle stage is small, and the strain of the first curable resin film (x1) in the final stage is large.
  • the upper limit of the X value defined in the above requirement (I) is preferably 5000 or less, more preferably 5000 or less. It is 2000 or less, more preferably 1000 or less, still more preferably 500 or less, still more preferably 300 or less, still more preferably 100 or less, and even more preferably 70 or less. Further, among the effects of the present invention, the X value defined in the above requirement (I) is more preferably 25 or more, and further, from the viewpoint of improving the embedding property in the groove portion of the wafer for manufacturing a semiconductor chip. It is preferably 30 or more, more preferably 40 or more, even more preferably 50 or more, and even more preferably 60 or more.
  • Gc1 is preferably 1 ⁇ 10 4 to 1 ⁇ 10 6 Pa from the viewpoint of making it easier to exert the excellent effects described above. It is more preferably ⁇ 10 4 to 7 ⁇ 10 5 Pa, and further preferably 5 ⁇ 10 4 to 5 ⁇ 10 5 Pa.
  • Gc300 is less than 15,000 Pa from the viewpoint of improving the embedding property in the groove of the semiconductor chip manufacturing wafer among the excellent effects described above. It is more preferably 10,000 Pa or less, further preferably 5,000 Pa or less, further preferably 4,000 Pa or less, and further preferably 3,500 Pa or less. preferable. Further, from the viewpoint of suppressing repelling of the first curable resin film (x1), Gc300 is preferably 100 Pa or more, more preferably 500 Pa or more, and further preferably 1,000 Pa or more.
  • the first curable resin film (x1) preferably satisfies the X value specified in the above requirement (I) from the viewpoint of making it easier to exert the excellent effect described above, and the above requirement (I) is satisfied. It is more preferable that either one or both of Gc1 and Gc300 satisfy the above range together with the specified X value.
  • the storage elastic modulus is not limited to the cases of Gc1 and Gc300, and can be easily adjusted by adjusting one or both of the types and contents of the components contained in the first curable resin film (x1).
  • one or both of the types and contents of the components contained in the composition for forming the first curable resin film (x1) may be adjusted.
  • a composition for forming a first thermosetting resin film (x1-1-1) which will be described later, is used, the main contents of the polymer component (A), filler (D), etc. in this composition are included.
  • the storage elasticity of the first curable resin film (x1) can be easily adjusted.
  • increasing the content of one or both of the filler (D) and the additive (I) of the first curable resin film (x1) and the composition for forming the first curable resin film increases Gc1. It is easy to adjust to a value, and as a result, it is easy to adjust the X value to a large value.
  • the first curable resin film (x1) may be composed of one layer (single layer) or may be composed of a plurality of layers of two or more layers.
  • the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited.
  • a plurality of layers may be the same or different from each other
  • all layers may be the same or different.
  • All layers may be different, or only some layers may be the same
  • multiple layers are different from each other means “at least the constituent materials and thickness of each layer”. It means that one is different from each other.
  • the thickness of the first curable resin film (x1) further improves the embedding property of the semiconductor wafer for semiconductor chip fabrication into the groove from the viewpoint of improving the coating property on the bump-forming surface of the semiconductor wafer for semiconductor chip fabrication. From the viewpoint of the above, it is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, still more preferably 30 ⁇ m or more, still more preferably more than 30 ⁇ m. Further, it is preferably 200 ⁇ m or less, more preferably 150 ⁇ m or less, still more preferably 130 ⁇ m or less, still more preferably 100 ⁇ m or less, still more preferably 80 ⁇ m or less.
  • the "thickness of the first curable resin film (x1)” means the thickness of the entire first curable resin film (x1), and for example, the first curable resin film composed of a plurality of layers (1).
  • the thickness of x1) means the total thickness of all the layers constituting the first curable resin film (x1).
  • the first curable resin film (x1) can be formed by using a composition for forming a first curable resin film containing the constituent material.
  • the first curable resin film (x1) can be formed by applying a composition for forming a first curable resin film on the surface to be formed and drying it if necessary.
  • the ratio of the contents of the components that do not vaporize at room temperature in the composition for forming the first curable resin film is usually the same as the ratio of the contents of the components in the first curable resin film (x1).
  • room temperature means a temperature that is not particularly cooled or heated, that is, a normal temperature, and examples thereof include a temperature of 15 to 25 ° C.
  • the first thermosetting resin film (x1-1) can be formed by using the first thermosetting resin film forming composition (x1-1-1), and the first energy ray-curable resin film (x1-2) can be formed. ) Can be formed by using the composition for forming a first energy ray-curable resin film (x1-2-1).
  • the first curable resin film (x1) has both thermosetting and energy ray curable properties
  • the first curable resin film (r1) formed by the curing thereof is formed.
  • the contribution of thermosetting of the first curable resin film (x1) is larger than the contribution of energy ray curing
  • the first curable resin film (x1) is treated as thermosetting.
  • the contribution of the first curable resin film (x1) to the energy ray curing is larger than the contribution of the thermosetting to the curing
  • the first curable resin film (x1) is energy ray cured. Treat as sex.
  • the composition for forming the first curable resin film may be coated by a known method, for example, spin coater, spray coater, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater. , A method using various coaters such as a curtain coater, a die coater, a knife coater, a screen coater, a Meyer bar coater, and a kiss coater.
  • the drying conditions of the composition for forming a curable resin film are not particularly limited regardless of whether the first curable resin film (x1) is thermosetting or energy ray curable. However, when the composition for forming a first curable resin film contains a solvent described later, it is preferable to heat-dry it.
  • the composition for forming a curable resin film containing a solvent is preferably heat-dried at 70 to 130 ° C. for 10 seconds to 5 minutes, for example.
  • the composition for forming the first thermosetting resin film (x1-1-1) includes the composition itself and the first thermosetting resin film (x1-1) formed from the composition. It is preferable to heat-dry it so that it does not cure by heat.
  • thermosetting resin film (x1-1) and the first energy ray-curable resin film (x1-2) will be described in more detail.
  • thermosetting resin film (x1-1) When the first thermosetting resin film (x1-1) is cured to form the first cured resin film (r1) which is the cured product, the cured product fully exerts its function under the curing conditions.
  • the degree of curing is not particularly limited as long as the degree of curing is about the same, and it may be appropriately selected depending on the type of the first thermosetting resin film (x1-1), the intended use of the cured product, and the like.
  • the heating temperature of the first thermosetting resin film (x1-1) at the time of curing is preferably 100 to 200 ° C, more preferably 110 to 170 ° C, and particularly preferably 120 to 150 ° C. preferable.
  • the heating time during the thermosetting is preferably 0.5 to 5 hours, more preferably 0.5 to 4 hours, and particularly preferably 1 to 3 hours.
  • composition for forming a first curable resin film (x1-1-1) examples include a polymer component (A), a thermosetting component (B), a filler (D), and an additive ( Composition for forming a first thermosetting resin film (x1-1-1) containing I) and (in this specification, it may be simply referred to as "composition (x1-1-1)"). And so on.
  • the polymer component (A) is a polymer compound for imparting film-forming property, flexibility, etc. to the first thermosetting resin film (x1-1).
  • the polymer component (A) has thermoplasticity and does not have thermosetting property.
  • a polymer compound also includes a product of a polycondensation reaction.
  • the polymer component (A) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) may be only one kind or two or more kinds. Well, when there are two or more kinds, the combination and ratio thereof can be arbitrarily selected.
  • the polymer component (A) examples include polyvinyl acetal, acrylic resin, urethane resin, phenoxy resin, silicone resin, saturated polyester resin and the like.
  • the polymer component (A) is preferably polyvinyl acetal. Since the polymer component (A) is polyvinyl acetal, when the first thermosetting resin film (x1-1) is attached to the bump forming surface of the wafer for manufacturing semiconductor chips, the first on the upper part of the bump.
  • thermosetting resin film (x1-1) The effect of suppressing the residual of the thermosetting resin film (x1-1), the effect of suppressing the protrusion of the first thermosetting resin film (x1-1), the first thermosetting resin film on the bump forming surface ( The effect of suppressing repelling of x1-1) and its cured product and the effect of improving the embedding property of the first thermosetting resin film (x1-1) in the groove are further enhanced.
  • polyvinyl acetal in the polymer component (A) examples include known ones. Among them, preferable polyvinyl acetals include, for example, polyvinyl formal, polyvinyl butyral, and the like, and polyvinyl butyral is more preferable. Examples of polyvinyl butyral include those having a structural unit represented by the following formulas (i) -1, (i) -2 and (i) -3.
  • the weight average molecular weight (Mw) of polyvinyl acetal is preferably 5,000 to 200,000, more preferably 8,000 to 100,000.
  • the weight average molecular weight of polyvinyl acetal is in such a range, when the first thermosetting resin film (x1-1) is attached to the bump forming surface of the wafer for manufacturing semiconductor chips, the first thermosetting resin film (x1-1) is attached to the upper part of the bump.
  • the effect of suppressing repelling of (x1-1) and its cured product and the effect of improving the embedding property of the first thermosetting resin film (x1-1) in the groove are further enhanced.
  • the glass transition temperature (Tg) of polyvinyl acetal is preferably 40 to 80 ° C, more preferably 50 to 70 ° C.
  • Tg of polyvinyl acetal is in such a range, when the first thermosetting resin film (x1-1) is attached to the bump forming surface of the wafer for manufacturing semiconductor chips, the first heat on the upper part of the bump is applied.
  • the effect of suppressing the residual of the curable resin film (x1-1), the effect of suppressing the protrusion of the first thermosetting resin film (x1-1), and the first thermosetting resin film (x1) on the bump forming surface. -1) and the effect of suppressing repelling of the cured product and the effect of improving the embedding property of the first thermosetting resin film (x1-1) in the groove are further enhanced.
  • the ratio of three or more types of monomers constituting the polyvinyl acetal can be arbitrarily selected.
  • the acrylic resin in the polymer component (A) examples include known acrylic polymers.
  • the weight average molecular weight (Mw) of the acrylic resin is preferably 5,000 to 1,000,000, and more preferably 8,000 to 800,000.
  • Mw weight average molecular weight of the acrylic resin
  • the first thermosetting resin film (x1-1) is attached to the upper part of the bump.
  • the effect of suppressing repelling of (x1-1) and its cured product and the effect of improving the embedding property of the first thermosetting resin film (x1-1) in the groove are further enhanced.
  • the glass transition temperature (Tg) of the acrylic resin is preferably -50 to 70 ° C, more preferably -30 to 60 ° C.
  • Tg of the acrylic resin is in such a range, when the first thermosetting resin film (x1-1) is attached to the bump forming surface of the wafer for manufacturing semiconductor chips, the first heat on the upper part of the bump is obtained.
  • the effect of suppressing the residual of the curable resin film (x1-1), the effect of suppressing the protrusion of the first thermosetting resin film (x1-1), the first thermosetting resin film (x1) on the bump forming surface. -1) and the effect of suppressing repelling of the cured product and the effect of improving the embedding property of the first thermosetting resin film (x1-1) in the groove are further enhanced.
  • the glass transition temperature (Tg) of the acrylic resin can be calculated by using the Fox formula.
  • Tg of the monomer for inducing the structural unit used at this time the value described in the polymer data handbook or the adhesive handbook can be used.
  • the monomer constituting the acrylic resin may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • acrylic resin for example, a polymer of one kind or two or more kinds of (meth) acrylic acid esters; Copolymers of two or more monomers selected from (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide and the like; One or more (meth) acrylic acid esters, one or more monomers selected from (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, etc. Examples thereof include the copolymer of.
  • (meth) acrylic acid is a concept that includes both “acrylic acid” and “methacrylic acid”.
  • (meth) acrylate is a concept that includes both “acrylate” and “methacrylate”, and is a "(meth) acryloyl group”. Is a concept that includes both an "acryloyl group” and a “methacryloyl group”.
  • Examples of the (meth) acrylic acid ester constituting the acrylic resin include methyl (meth) acrylic acid, ethyl (meth) acrylic acid, n-propyl (meth) acrylic acid, isopropyl (meth) acrylic acid, and (meth).
  • N-butyl acrylate isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, (meth) acrylate Heptyl, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate (lauryl acrylate), tridecyl (meth) acrylate, tetradecyl (meth) acrylate (myristyl (meth) acrylate), pentadecy
  • a glycidyl group-containing (meth) acrylic acid ester such as glycidyl (meth) acrylate; Hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxyprop
  • the acrylic resin may have a functional group capable of binding to other compounds such as a vinyl group, a (meth) acryloyl group, an amino group, a hydroxyl group, a carboxy group, and an isocyanate group.
  • the functional group of the acrylic resin may be bonded to another compound via a cross-linking agent (F) described later, or may be directly bonded to another compound without a cross-linking agent (F).
  • F cross-linking agent
  • the ratio of the content of the polymer component (A) to the total mass of the first thermosetting resin film (x1-1) is 5 to 25% by mass regardless of the type of the polymer component (A). It is preferably 5 to 15% by mass, and more preferably 5 to 15% by mass.
  • thermosetting component (B) is a component for having thermosetting property and heat-curing the first thermosetting resin film (x1-1) to form a hard cured product.
  • the composition (x1-1-1) and the first thermosetting resin film (x1-1) contain only one type of thermosetting component (B), or two or more types. In the case of two or more kinds, the combination and ratio thereof can be arbitrarily selected.
  • thermosetting component (B) examples include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins.
  • the thermosetting component (B) is preferably an epoxy-based thermosetting resin.
  • the epoxy-based thermosetting resin is composed of an epoxy resin (B1) and a thermosetting agent (B2).
  • the epoxy-based thermosetting resin contained in the composition (x1-1-1) and the first thermosetting resin film may be only one type, two or more types, or two or more types. If, the combination and ratio thereof can be arbitrarily selected.
  • Epoxy resin (B1) examples include known ones, such as polyfunctional epoxy resin, biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolac epoxy resin, and dicyclopentadiene type epoxy resin.
  • Biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, and other bifunctional or higher functional epoxy compounds can be mentioned.
  • the epoxy resin (B1) may be an epoxy resin having an unsaturated hydrocarbon group.
  • Epoxy resins having unsaturated hydrocarbon groups have higher compatibility with acrylic resins than epoxy resins having no unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, for example, the reliability of a package obtained by using a first thermosetting resin film (x1-1) tends to be improved.
  • Examples of the epoxy resin having an unsaturated hydrocarbon group include a compound obtained by converting a part of the epoxy group of the polyfunctional epoxy resin into a group having an unsaturated hydrocarbon group. Such a compound can be obtained, for example, by subjecting an epoxy group to an addition reaction of (meth) acrylic acid or a derivative thereof.
  • Examples of the epoxy resin having an unsaturated hydrocarbon group include a compound in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring or the like constituting the epoxy resin.
  • the unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include an ethenyl group (vinyl group), a 2-propenyl group (allyl group), a (meth) acryloyl group, and a (meth) group. Examples thereof include an acrylamide group, and an acryloyl group is preferable.
  • the number average molecular weight of the epoxy resin (B1) is not particularly limited, but is the curability of the first thermosetting resin film (x1-1) and the cured product of the first thermosetting resin film (x1-1). From the viewpoint of strength and heat resistance, it is preferably 300 to 30,000, more preferably 400 to 10,000, and particularly preferably 500 to 3,000.
  • the epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1,000 g / eq, more preferably 200 to 800 g / eq.
  • epoxy resin (B1) one type may be used alone, two or more types may be used in combination, and when two or more types are used in combination, the combination and ratio thereof can be arbitrarily selected.
  • thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).
  • thermosetting agent (B2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule.
  • the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxy group, a group in which an acid group is annealed, and the like, and the phenolic hydroxyl group, an amino group, or an acid group is annealed. It is preferably a group, more preferably a phenolic hydroxyl group or an amino group.
  • thermosetting agents (B2) examples of the phenol-based curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-based phenol resins, and aralkylphenol resins.
  • examples of the amine-based curing agent having an amino group include dicyandiamide (hereinafter, may be abbreviated as "DICY”) and the like.
  • the thermosetting agent (B2) may have an unsaturated hydrocarbon group.
  • the thermosetting agent (B2) having an unsaturated hydrocarbon group is, for example, a compound in which a part of the hydroxyl group of the phenol resin is replaced with a group having an unsaturated hydrocarbon group, which is not suitable for the aromatic ring of the phenol resin. Examples thereof include compounds in which a group having a saturated hydrocarbon group is directly bonded.
  • the unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the epoxy resin having the unsaturated hydrocarbon group described above.
  • thermosetting agents (B2) the number average molecular weight of resin components such as polyfunctional phenol resin, novolak type phenol resin, dicyclopentadiene type phenol resin, and aralkyl type phenol resin is 300 to 30,000. Is preferable, 400 to 10,000 is more preferable, and 500 to 3,000 is particularly preferable.
  • the molecular weight of the non-resin component such as biphenol and dicyandiamide in the thermosetting agent (B2) is not particularly limited, but is preferably 60 to 500, for example.
  • thermosetting agent (B2) one type may be used alone, two or more types may be used in combination, and when two or more types are used in combination, the combination and ratio thereof can be arbitrarily selected.
  • the content of the thermosetting agent (B2) is based on 100 parts by mass of the content of the epoxy resin (B1). It is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, and is, for example, 5 to 150 parts by mass, 10 to 100 parts by mass, or 15 to 75 parts by mass. You may.
  • the content of the thermosetting agent (B2) is at least the lower limit value, the curing of the first thermosetting resin film (x1-1) becomes easier to proceed.
  • the content of the thermosetting agent (B2) is not more than the upper limit value, the moisture absorption rate of the first thermosetting resin film (x1-1) is reduced, for example, the first thermosetting resin film (1). The reliability of the package obtained by using x1-1) is further improved.
  • the content of the thermosetting component (B) (for example, the epoxy resin (B1) and the thermosetting agent (B2))
  • the total content) is preferably 600 to 1000 parts by mass with respect to 100 parts by mass of the content of the polymer component (A).
  • the content of the thermosetting component (B) is in such a range, when the first thermosetting resin film (x1-1) is attached to the bump forming surface of the semiconductor chip manufacturing wafer, the bumps are formed.
  • thermosetting resin film (x1-1) The effect of suppressing the repelling of the thermosetting resin film (x1-1) and its cured product, and the effect of improving the embedding property of the first thermosetting resin film (x1-1) in the groove are further enhanced, and A hard cured product can be formed. Further, the content of the thermosetting component (B) may be appropriately adjusted according to the type of the polymer component (A) from the viewpoint that such an effect can be obtained more remarkably.
  • the content of the thermosetting component (B) in the composition (x1-1-1) and the first thermosetting resin film (x1-1). is preferably 600 to 1,000 parts by mass, more preferably 650 to 1,000 parts by mass, and 650 to 950 parts by mass with respect to 100 parts by mass of the content of the polymer component (A). Is particularly preferable.
  • the composition (x1-1-1) and the first thermosetting resin film (x1) are formed.
  • the X value can be adjusted more easily.
  • the amount of the filler (D) in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be adjusted.
  • the coefficient of thermal expansion of the cured product can be adjusted more easily.
  • the coefficient of thermal expansion of the cured product of the first thermosetting resin film (x1-1) is optimized for the object to be formed of the cured product.
  • the reliability of the package obtained by using the first thermosetting resin film (x1-1) is further improved. Further, by using the first thermosetting resin film (x1-1) containing the filler (D), the moisture absorption rate of the cured product of the first thermosetting resin film (x1-1) can be reduced. It is also possible to improve heat dissipation.
  • the filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
  • Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride and the like; spherical beads of these inorganic fillers; surface modification of these inorganic fillers. Goods; Single crystal fibers of these inorganic fillers; Glass fibers and the like.
  • the inorganic filler is preferably silica or alumina.
  • the filler (D) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) may be of only one type or of two or more types. When there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the ratio of the content of the filler (D) to the total mass of the thermosetting resin film (x1-1)) is preferably 5 to 45% by mass, more preferably 5 to 40% by mass. It is preferably 5 to 30% by mass, and more preferably 5 to 30% by mass.
  • the composition (x1-1-1) and the first thermosetting resin film (x1) are formed.
  • Gc1 can be appropriately adjusted and the X value can be adjusted more easily.
  • examples of the additive (I) preferable in that the X value can be adjusted more easily include a rheology control agent, a surfactant, a silicone oil and the like.
  • examples of the rheology control agent include polyhydroxycarboxylic acid esters, polyvalent carboxylic acids, and polyamide resins.
  • examples of the surfactant include modified siloxane, acrylic polymer and the like.
  • examples of the silicone oil include aralkyl-modified silicone oil and modified polydimethylsiloxane, and examples of the modifying group include an aralkyl group; a polar group such as a hydroxy group; and a group having an unsaturated bond such as a vinyl group and a phenyl group. Can be mentioned.
  • additive (I) examples include other general-purpose additives such as plasticizers, antistatic agents, antioxidants, gettering agents, ultraviolet absorbers, and tackifiers, in addition to the above. ..
  • the additive (I) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) may be only one kind or two or more kinds. When there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the content of the additive (I) of the composition (x1-1-1) and the first thermosetting resin film (x1-1) is not particularly limited, and can be appropriately adjusted according to the type and purpose thereof.
  • the ratio of the content of the additive (I) to the total mass of the first thermosetting resin film (x1-1) in the first thermosetting resin film (x1-1)) is 0.5 to 10 mass. %, More preferably 0.5 to 7% by mass, and even more preferably 0.5 to 5% by mass.
  • the composition (x1-1-1) and the first thermosetting resin film (x1-1) may contain a curing accelerator (C).
  • the curing accelerator (C) is a component for adjusting the curing rate of the composition (x1-1-1).
  • Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol and tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole.
  • 2-Phenyl-4-methylimidazole 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole and other imidazoles (one or more hydrogen atoms other than hydrogen atoms) (Imidazole substituted with an organic group); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (phosphine in which one or more hydrogen atoms are substituted with an organic group); tetraphenylphosphonium tetraphenylborate, triphenylphosphine Examples thereof include tetraphenylborone salts such as tetraphenylborate.
  • the curing accelerator (C) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) may be only one type or two or more types. Well, when there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the content of the curing accelerator (C) in the composition (x1-1-1) and the first thermosetting resin film (x1-1) is the thermosetting component (x1-1-1).
  • the content of B) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass.
  • the content of the curing accelerator (C) is at least the lower limit value, the effect of using the curing accelerator (C) is more remarkable.
  • the highly polar curing accelerator (C) is a first thermosetting resin film (x1-) under high temperature and high humidity conditions. In 1), the effect of suppressing segregation by moving to the adhesion interface side with the adherend becomes high, and the reliability of the package obtained by using, for example, the first thermosetting resin film (x1-1) is enhanced. The sex is improved.
  • the composition (x1-1-1) and the first thermosetting resin film (x1-1) may contain a coupling agent (E).
  • a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound By using a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound, the adhesiveness and adhesion of the first thermosetting resin film (x1-1) to the adherend can be improved. Can be improved. Further, by using the coupling agent (E), the cured product of the first thermosetting resin film (x1-1) is improved in water resistance without impairing the heat resistance.
  • the coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional groups of the polymer component (A), the thermosetting component (B), and the like, and is preferably a silane coupling agent. More preferred.
  • Preferred silane coupling agents include, for example, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2-.
  • the coupling agent (E) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) may be only one kind or two or more kinds. Well, when there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the content of the coupling agent (E) in the composition (x1-1-1) and the first thermosetting resin film (x1-1) is the polymer component (A).
  • the total content of the thermosetting component (B) of 100 parts by mass, preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and 0.1. It is particularly preferable that the amount is up to 5 parts by mass.
  • the content of the coupling agent (E) is equal to or higher than the lower limit, the dispersibility of the filler (D) in the resin can be improved, and the first thermosetting resin film (x1-1) can be attached.
  • the effect of using the coupling agent (E) such as improvement of adhesiveness to an object, can be obtained more remarkably.
  • the content of the coupling agent (E) is not more than the upper limit value, the generation of outgas is further suppressed.
  • the composition (X1- 1-1) and the first thermosetting resin film (x1-1) may contain a cross-linking agent (F).
  • the cross-linking agent (F) is a component for bonding the functional group in the polymer component (A) with another compound to cross-link the polymer component (A). The initial adhesive force and cohesive force of x1-1) can be adjusted.
  • cross-linking agent (F) examples include an organic polyvalent isocyanate compound, an organic polyvalent imine compound, a metal chelate-based cross-linking agent (a cross-linking agent having a metal chelate structure), an aziridine-based cross-linking agent (a cross-linking agent having an aziridinyl group), and the like. Can be mentioned.
  • organic polyvalent isocyanate compound examples include an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound, and an alicyclic polyvalent isocyanate compound (hereinafter, these compounds are collectively referred to as "aromatic polyvalent isocyanate compound and the like". (May be abbreviated); trimerics such as the aromatic polyvalent isocyanate compound, isocyanurates and adducts; terminal isocyanate urethane prepolymer obtained by reacting the aromatic polyvalent isocyanate compound and the like with a polyol compound. And so on.
  • the "adduct” is a low content of the aromatic polyhydric isocyanate compound, the aliphatic polyvalent isocyanate compound or the alicyclic polyvalent isocyanate compound, and ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil. It means a reaction product with a molecularly active hydrogen-containing compound.
  • the adduct body include a xylylene diisocyanate adduct of trimethylolpropane, which will be described later.
  • the "terminal isocyanate urethane prepolymer” means a prepolymer having a urethane bond and an isocyanate group at the terminal portion of the molecule.
  • organic polyvalent isocyanate compound for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4.
  • organic polyvalent imine compound examples include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxyamide), trimethylolpropane-tri- ⁇ -aziridinyl propionate, and tetramethylolmethane.
  • examples thereof include -tri- ⁇ -aziridinyl propionate, N, N'-toluene-2,4-bis (1-aziridinecarboxyamide) triethylene melamine and the like.
  • the cross-linking agent (F) When an organic multivalent isocyanate compound is used as the cross-linking agent (F), it is preferable to use a hydroxyl group-containing polymer as the polymer component (A).
  • the cross-linking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, the reaction between the cross-linking agent (F) and the polymer component (A) causes the first thermosetting resin film (x1).
  • the crosslinked structure can be easily introduced into -1).
  • the cross-linking agent (F) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) may be only one kind or two or more kinds. When there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the content of the cross-linking agent (F) in the composition (x1-1-1) is 0.01 to 100 parts by mass with respect to 100 parts by mass of the content of the polymer component (A). It is preferably 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.5 to 5 parts by mass.
  • the content of the cross-linking agent (F) is at least the lower limit value, the effect of using the cross-linking agent (F) is more remarkable.
  • the content of the cross-linking agent (F) is not more than the upper limit value, the excessive use of the cross-linking agent (F) is suppressed.
  • the composition (x1-1-1) and the first thermosetting resin film (x1-1) may contain an energy ray-curable resin (G). Since the first thermosetting resin film (x1-1) contains the energy ray-curable resin (G), the characteristics can be changed by irradiation with energy rays.
  • the energy ray-curable resin (G) is obtained by polymerizing (curing) an energy ray-curable compound.
  • the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate-based compounds having a (meth) acryloyl group are preferable.
  • acrylate-based compound examples include trimethylolpropantri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta (meth).
  • the weight average molecular weight of the energy ray-curable compound is preferably 100 to 30,000, more preferably 300 to 10,000.
  • the energy ray-curable compound used for polymerization one type may be used alone, or two or more types may be used in combination. When there are two or more energy ray-curable compounds used for polymerization, their combinations and ratios can be arbitrarily selected.
  • the content of the energy ray-curable resin (G) is 1 to 95% by mass based on the total amount of the active ingredient of the composition (x1-1-1). It is preferably 5 to 90% by mass, more preferably 10 to 85% by mass.
  • composition (x1-1-1) and the first thermosetting resin film (x1-1) contain the energy ray-curable resin (G)
  • the polymerization reaction of the energy ray-curable resin (G) is efficient.
  • the composition (x1-1-1) and the first thermosetting resin film (x1-1) may contain a photopolymerization initiator (H).
  • photopolymerization initiator (H) examples include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl ketal, 2,4.
  • photopolymerization initiator (H) one type may be used alone, or two or more types may be used in combination. When there are two or more photopolymerization initiators (H), their combinations and ratios can be arbitrarily selected.
  • the content of the photopolymerization initiator (H) is 0.1 to 20 parts by mass with respect to 100 parts by mass of the content of the energy ray-curable resin (G). It is preferably 1 to 10 parts by mass, more preferably 2 to 5 parts by mass.
  • composition (x1-1-1) and the first thermosetting resin film (x1-1) are the above-mentioned polymer component (A) and the thermosetting component (x1-1) within a range that does not impair the effects of the present invention.
  • B curing accelerator (C), filler (D), coupling agent (E), cross-linking agent (F), energy ray-curable resin (G), and photopolymerization initiator (H).
  • the additive (I), and other components that do not correspond to any of the above may be contained.
  • the other components contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) may be only one kind or two or more kinds. When there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the contents of the other components of the composition (x1-1-1) and the first thermosetting resin film (x1-1) are not particularly limited and may be appropriately selected depending on the intended purpose.
  • the composition (x1-1-1) preferably further contains a solvent.
  • the solvent-containing composition (x1-1-1) has good handleability.
  • the solvent is not particularly limited, but preferred ones are, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol. Examples thereof include esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (compounds having an amide bond).
  • the solvent contained in the composition (x1-1-1) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. it can.
  • solvents contained in the composition (x1-1-1) include, for example, methyl ethyl ketone and the like from the viewpoint that the components contained in the composition (x1-1-1) can be mixed more uniformly. ..
  • the content of the solvent in the composition (x1-1-1) is not particularly limited, and may be appropriately selected depending on, for example, the type of component other than the solvent.
  • the first thermosetting resin film forming composition (x1-1-1) is obtained by blending each component for constituting the composition.
  • the order of addition of each component at the time of blending is not particularly limited, and two or more kinds of components may be added at the same time.
  • the method of mixing each component at the time of blending is not particularly limited, and from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. It may be selected as appropriate.
  • the temperature and time at the time of adding and mixing each component are not particularly limited as long as each compounding component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30 ° C.
  • First energy ray curable resin film (x1-2) The cured product fully exerts its function under the curing conditions when the first energy ray-curable resin film (x1-2) is cured to form the first cured resin film (r1) which is the cured product.
  • the degree of curing is not particularly limited, and may be appropriately selected depending on the type of the first energy ray-curable resin film (x1-2), the intended use of the cured product, and the like.
  • the illuminance of the energy ray at the time of curing the first energy ray curable resin film (x1-2) is preferably 180 to 280 mW / cm 2.
  • the amount of light of the energy rays at the time of curing is preferably 450 to 1000 mJ / cm 2.
  • the first energy ray-curable resin film forming composition (x1-2-1) includes, for example, an energy ray-curable component (a), a filler, and an additive. Examples thereof include a composition for forming a sex resin film (x1-2-1) (in the present specification, it may be simply referred to as "composition (x1-2-1)").
  • the energy ray-curable component (a) is a component that is cured by irradiation with energy rays, and is a component for imparting film-forming property, flexibility, and the like to the first energy ray-curable resin film (x1-2). But also.
  • the energy ray-curable component (a) is preferably uncured, preferably sticky, and more preferably uncured and sticky.
  • Examples of the energy ray-curable component (a) include a polymer (a1) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000, and an energy ray-curable group. Examples thereof include a compound (a2) having a molecular weight of 100 to 80,000.
  • the polymer (a1) may be at least partially crosslinked by a crosslinking agent or may not be crosslinked.
  • polymer (a1) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000 examples include an acrylic polymer having a functional group capable of reacting with a group of another compound (a).
  • Examples of the functional group capable of reacting with a group of another compound include a hydroxyl group, a carboxy group, an amino group, and a substituted amino group (one or two hydrogen atoms of the amino group are substituted with a group other than the hydrogen atom. Group), epoxy group and the like.
  • the functional group is preferably a group other than a carboxy group.
  • the functional group is preferably a hydroxyl group.
  • the acrylic polymer (a11) having a functional group examples include those obtained by copolymerizing an acrylic monomer having the functional group and an acrylic monomer having no functional group, and other than these monomers. Further, a monomer other than the acrylic monomer (non-acrylic monomer) may be copolymerized. Further, the acrylic polymer (a11) may be a random copolymer or a block copolymer.
  • acrylic monomer having a functional group examples include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, and an epoxy group-containing monomer.
  • hydroxyl group-containing monomer examples include hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, and (meth).
  • (Meta) hydroxyalkyl acrylates such as 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate; non- (meth) acrylic unsaturated such as vinyl alcohol and allyl alcohol Examples thereof include alcohol (unsaturated alcohol having no (meth) acrylic skeleton).
  • Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having ethylenically unsaturated bonds) such as (meth) acrylic acid and crotonic acid; fumaric acid, itaconic acid, maleic acid, and citracon.
  • Ethylene unsaturated dicarboxylic acids such as acids (dicarboxylic acids having ethylenically unsaturated bonds); anhydrides of the ethylenically unsaturated dicarboxylic acids; (meth) acrylic acid carboxyalkyl esters such as 2-carboxyethyl methacrylate and the like. Be done.
  • the acrylic monomer having the functional group is preferably a hydroxyl group-containing monomer or a carboxy group-containing monomer, and more preferably a hydroxyl group-containing monomer.
  • the acrylic monomer having the functional group constituting the acrylic polymer (a11) may be only one kind, two or more kinds, and when two or more kinds, a combination thereof and The ratio can be selected arbitrarily.
  • acrylic monomer having no functional group examples include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, and n- (meth) acrylate.
  • acrylic monomer having no functional group examples include an alkoxyalkyl group such as methoxymethyl (meth) acrylate, methoxyethyl (meth) acrylate, ethoxymethyl (meth) acrylate, and ethoxyethyl (meth) acrylate.
  • (Meta) acrylic acid ester (meth) acrylic acid ester having an aromatic group, including (meth) acrylic acid aryl ester such as (meth) phenyl acrylic acid; non-crosslinkable (meth) acrylamide and its derivatives; Examples thereof include (meth) acrylic acid esters having a non-crosslinkable tertiary amino group such as (meth) acrylic acid N, N-dimethylaminoethyl and (meth) acrylic acid N, N-dimethylaminopropyl.
  • the acrylic monomer having no functional group constituting the acrylic polymer (a11) may be only one kind, may be two or more kinds, and when there are two or more kinds, a combination thereof. And the ratio can be selected arbitrarily.
  • non-acrylic monomer examples include olefins such as ethylene and norbornene; vinyl acetate; and styrene.
  • the non-acrylic monomer constituting the acrylic polymer (a11) may be only one kind, may be two or more kinds, and when there are two or more kinds, the combination and the ratio thereof are arbitrary. You can choose.
  • the ratio (content) of the amount of the structural unit derived from the acrylic monomer having a functional group to the total amount of the structural unit constituting the acrylic polymer (a11) is 0.1 to 50% by mass. It is preferably 1 to 40% by mass, more preferably 3 to 30% by mass, and particularly preferably 3 to 30% by mass.
  • the content of the sex group can be easily adjusted to a preferable range in the degree of curing of the cured product of the first energy ray-curable resin film (x1-2).
  • the acrylic polymer (a11) constituting the acrylic resin (a1-1) may be of only one type, may be of two or more types, and when there are two or more types, a combination thereof and The ratio can be selected arbitrarily.
  • the ratio of the content of the acrylic resin (a1-1) to the total content of the components other than the solvent is preferably 1 to 40% by mass, more preferably 2 to 30% by mass, and 3 to 20% by mass. % Is particularly preferable.
  • the energy ray-curable compound (a12) is one or more selected from the group consisting of an isocyanate group, an epoxy group and a carboxy group as a group capable of reacting with the functional group of the acrylic polymer (a11). It is preferable that the group has an isocyanate group, and more preferably the group has an isocyanate group.
  • the energy ray-curable compound (a12) has an isocyanate group as the group, for example, the isocyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.
  • the energy ray-curable compound (a12) preferably has 1 to 5 energy ray-curable groups in one molecule, and more preferably 1 to 2 groups.
  • Examples of the energy ray-curable compound (a12) include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, and 1,1- (bisacryloyloxymethyl).
  • Ethyl isocyanate Acryloyl monoisocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound with hydroxyethyl (meth) acrylate;
  • Examples thereof include an acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound with a polyol compound and a hydroxyethyl (meth) acrylate.
  • the energy ray-curable compound (a12) is preferably 2-methacryloyloxyethyl isocyanate.
  • the energy ray-curable compound (a12) constituting the acrylic resin (a1-1) may be only one kind, two or more kinds, and when two or more kinds, those The combination and ratio can be selected arbitrarily.
  • the ratio of the content of the energy ray-curable group derived from the energy ray-curable compound (a12) to the content of the functional group derived from the acrylic polymer (a11) in the acrylic resin (a1-1). is preferably 20 to 120 mol%, more preferably 35 to 100 mol%, and particularly preferably 50 to 100 mol%.
  • the content ratio is in such a range, the adhesive force of the cured product of the energy ray-curable resin film (x1-2) becomes larger.
  • the energy ray-curable compound (a12) is a monofunctional compound (having one group in one molecule)
  • the upper limit of the content ratio is 100 mol%.
  • the energy ray-curable compound (a12) is a polyfunctional compound (having two or more of the groups in one molecule)
  • the upper limit of the content ratio may exceed 100 mol%.
  • the weight average molecular weight (Mw) of the polymer (a1) is preferably 100,000 to 2,000,000, more preferably 300,000 to 1,500,000.
  • the above-mentioned monomer described as constituting the acrylic polymer (a11) when the polymer (a1) is at least partially crosslinked by a cross-linking agent A monomer that does not correspond to any of the above and has a group that reacts with the cross-linking agent may be polymerized and cross-linked at the group that reacts with the cross-linking agent, or the energy ray-curable compound (a12). ), Which may be crosslinked in the group that reacts with the functional group.
  • the polymer (a1) contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may be only one kind, or two or more kinds. In the case of two or more kinds, the combination and ratio thereof can be arbitrarily selected.
  • a compound (a2) having an energy ray-curable group and having a molecular weight of 100 to 80,000 examples include a group containing an energy ray-curable double bond, and preferred ones are.
  • (Meta) Acryloyl group, vinyl group and the like can be mentioned.
  • the compound (a2) is not particularly limited as long as it satisfies the above conditions, but has a low molecular weight compound having an energy ray-curable group, an epoxy resin having an energy ray-curable group, and an energy ray-curable group.
  • Examples include phenol resin.
  • examples of the low molecular weight compound having an energy ray-curable group include polyfunctional monomers or oligomers, and acrylate compounds having a (meth) acryloyl group are preferable.
  • examples of the acrylate-based compound include 2-hydroxy-3- (meth) acryloyloxypropyl methacrylate, polyethylene glycol di (meth) acrylate, propoxylated ethoxylated bisphenol A di (meth) acrylate, and 2,2-bis [4.
  • Bifunctional (meth) acrylate Tris (2- (meth) acryloxyethyl) isocyanurate, ⁇ -caprolactone-modified tris- (2- (meth) acryloxyethyl) isocyanurate, ethoxylated glycerin tri (meth) acrylate, pentaerythritol tri (meth) acrylate, Trimethylolpropane tri (meth) acrylate, ditrimethylolpropane tetra (meth) acrylate, ethoxylated pentaerythritol tetra (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol poly (meth) acrylate, dipentaerythritol hexa
  • Polyfunctional (meth) acrylates such as meta) acrylates; Examples thereof include polyfunctional (meth) acrylate oligomers such as
  • an epoxy resin having an energy ray-curable group and a phenol resin having an energy ray-curable group are described in, for example, paragraph 0043 of "Japanese Patent Laid-Open No. 2013-194102". Can be used. Such a resin also corresponds to a resin constituting a thermosetting component described later, but is treated as the compound (a2) in the present invention.
  • the weight average molecular weight of the compound (a2) is preferably 100 to 30,000, more preferably 300 to 10,000.
  • the compound (a2) contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may be only one kind or two or more kinds. Well, when there are two or more types, their combinations and ratios can be arbitrarily selected.
  • composition (x1-2-1) and the first energy ray-curable resin film (x1-2) contain the compound (a2) as the energy ray-curable component (a), they are further energy ray-curable. It is also preferable to contain the polymer (b) having no group.
  • the polymer (b) may be at least partially crosslinked by a crosslinking agent or may not be crosslinked.
  • the polymer (b) having no energy ray-curable group examples include an acrylic polymer, a phenoxy resin, a urethane resin, a polyester, a rubber resin, and an acrylic urethane resin.
  • the polymer (b) is preferably an acrylic polymer (hereinafter, may be abbreviated as "acrylic polymer (b-1)").
  • the acrylic polymer (b-1) may be a known one, and may be, for example, a homopolymer of one kind of acrylic monomer or a copolymer of two or more kinds of acrylic monomers. It may be a copolymer of one or more kinds of acrylic monomers and one or more kinds of monomers other than the acrylic monomers (non-acrylic monomers).
  • acrylic monomer constituting the acrylic polymer (b-1) examples include (meth) acrylic acid alkyl ester, (meth) acrylic acid ester having a cyclic skeleton, glycidyl group-containing (meth) acrylic acid ester, and hydroxyl group-containing. Examples thereof include (meth) acrylic acid ester and (meth) acrylic acid ester containing a substituted amino group.
  • the "substituted amino group" is as described above.
  • the above-described acrylic monomer having no functional group (alkyl group constituting the alkyl ester) constituting the acrylic polymer (a11) has one carbon number.
  • the same as (meth) acrylic acid alkyl ester, etc., which has a chain structure of to 18) can be mentioned.
  • Examples of the (meth) acrylic acid ester having a cyclic skeleton include (meth) acrylic acid cycloalkyl esters such as (meth) acrylic acid isobornyl and (meth) acrylic acid dicyclopentanyl; (Meta) Acrylic acid aralkyl esters such as benzyl (meth) acrylic acid; (Meta) Acrylic acid cycloalkenyl ester such as (meth) acrylic acid dicyclopentenyl ester; Examples thereof include (meth) acrylic acid cycloalkenyloxyalkyl ester such as (meth) acrylic acid dicyclopentenyloxyethyl ester.
  • Examples of the glycidyl group-containing (meth) acrylic acid ester include glycidyl (meth) acrylic acid.
  • Examples of the hydroxyl group-containing (meth) acrylic acid ester include hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, and 3-hydroxy (meth) acrylate. Examples thereof include propyl, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate.
  • Examples of the substituted amino group-containing (meth) acrylic acid ester include N-methylaminoethyl (meth) acrylic acid.
  • non-acrylic monomer constituting the acrylic polymer (b-1) examples include olefins such as ethylene and norbornene; vinyl acetate; styrene and the like.
  • the polymer (b) having no energy ray-curable group, which is at least partially crosslinked by a cross-linking agent for example, a polymer (b) in which the reactive functional group in the polymer (b) has reacted with the cross-linking agent is used.
  • the reactive functional group may be appropriately selected depending on the type of the cross-linking agent and the like, and is not particularly limited.
  • the cross-linking agent is a polyisocyanate compound
  • examples of the reactive functional group include a hydroxyl group, a carboxy group, an amino group and the like, and among these, a hydroxyl group having high reactivity with an isocyanate group is preferable.
  • the reactive functional group include a carboxy group, an amino group, an amide group and the like, and among these, a carboxy group having high reactivity with an epoxy group is preferable. ..
  • the reactive functional group is preferably a group other than the carboxy group.
  • Examples of the polymer (b) having the reactive functional group and not having the energy ray-curable group include those obtained by polymerizing at least the monomer having the reactive functional group.
  • the acrylic polymer (b-1) one or both of the acrylic monomer and the non-acrylic monomer mentioned as the monomers constituting the acrylic polymer (b-1) may be those having the reactive functional group. ..
  • Examples of the polymer (b) having a hydroxyl group as a reactive functional group include those obtained by polymerizing a hydroxyl group-containing (meth) acrylic acid ester, and in addition to this, the above-mentioned acrylic.
  • the monomer or non-acrylic monomer include those obtained by polymerizing a monomer in which one or more hydrogen atoms are substituted with the reactive functional group.
  • the ratio (content) of the amount of the structural unit derived from the monomer having the reactive functional group to the total amount of the structural units constituting the polymer (b) is 1 to 20. It is preferably by mass%, more preferably 2 to 10% by mass. When the ratio is in such a range, the degree of cross-linking in the polymer (b) becomes a more preferable range.
  • the weight average molecular weight (Mw) of the polymer (b) having no energy ray-curable group is 10,000 to 2,000,000 from the viewpoint of improving the film-forming property of the composition (IV). It is preferably 100,000 to 1,500,000, and more preferably 100,000 to 1,500,000.
  • Only one type of polymer (b) having no energy ray-curable group contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may be used. However, there may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • compositions (x1-2-1) include those containing either or both of the polymer (a1) and the compound (a2).
  • the composition (x1-2-1) contains the compound (a2), it preferably also contains a polymer (b) having no energy ray-curable group.
  • the composition (x1-2-1) further contains the above (x1-2-1). It is also preferable to contain a1).
  • the composition (x1-2-1) does not contain the compound (a2), but contains both the polymer (a1) and the polymer (b) having no energy ray-curable group. May be good.
  • the composition (x1-2-1) contains the polymer (a1), the compound (a2), and the polymer (b) having no energy ray-curable group
  • the composition (x1-2-1) contains the polymer (a1), the compound (a2), and the polymer (b) having no energy ray-curable group
  • the content of the compound (a2) is 10 to 400 parts by mass with respect to 100 parts by mass of the total content of the polymer (a1) and the polymer (b) having no energy ray-curable group. It is preferably 30 to 350 parts by mass, and more preferably 30 to 350 parts by mass.
  • the ratio of the total content of the energy ray-curable component (a) and the polymer (b) having no energy ray-curable group to the total content of the components other than the solvent (That is, the total of the energy ray-curable component (a) and the polymer (b) having no energy ray-curable group with respect to the total mass of the film in the first energy ray-curable resin film (x1-2).
  • the content ratio is preferably 5 to 90% by mass, more preferably 10 to 80% by mass, and particularly preferably 20 to 70% by mass. When the ratio is in such a range, the energy ray curability of the first energy ray curable resin film (x1-2) becomes better.
  • the X value can be adjusted more easily by adjusting the amount of the filler in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2). Further, by adjusting the amount of the filler in the composition (x1-2-1) and the first energy ray curable resin film (x1-2), the first energy ray curable resin film (x1-2) The thermal expansion coefficient of the cured product can be adjusted more easily. For example, the thermal expansion coefficient of the cured product of the first energy ray-curable resin film (x1-2) is optimized for the object to be formed of the protective film. As a result, the reliability of the package obtained by using the first energy ray-curable resin film (x1-2) is further improved.
  • the moisture absorption rate of the cured product of the first energy ray-curable resin film (x1-2) can be reduced or heat can be dissipated. It can also improve sex.
  • the filler contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is the composition (x1-1-1) and the first thermosetting property described above. It is the same as the filler (D) contained in the resin film (x1-1).
  • the inclusion of the filler in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) includes the composition (x1-1-1) and the first thermosetting resin film (x1-2). It may be the same as the mode of containing the filler (D) of x1-1).
  • the filler contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may be only one kind or two or more kinds. In the case of species or more, their combinations and ratios can be arbitrarily selected.
  • the ratio of the content of the filler to the total content of all the components other than the solvent that is, the first energy in the first energy ray-curable resin film (x1-2)
  • the ratio of the content of the filler to the total mass of the linear curable resin film (x1-2)) may be, for example, 5 to 45% by mass.
  • the X value can be adjusted more easily by adjusting the type or amount of the additive in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2).
  • the additives contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) are the composition (x1-1-1) and the first thermosetting property described above. It is the same as the additive (I) contained in the resin film (x1-2).
  • preferable additives in that the X value can be adjusted more easily include rheology control agents, surfactants, silicone oils and the like.
  • the mode of containing the additive of the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is the composition (X1-1-1) and the first thermosetting resin film (x1-2). It may be the same as the mode of containing the additive (I) of x1-1).
  • composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may contain only one type of additive or two or more types of additives. In the case of species or more, their combinations and ratios can be arbitrarily selected.
  • the content of the additive in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is not particularly limited, and can be appropriately adjusted according to the type and purpose thereof.
  • the ratio of the content of the additive to the total mass of the first energy ray-curable resin film (x1-2) in the linear curable resin film (x1-2)) is, for example, 0.5 to 10% by mass. There may be.
  • the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) contain the energy ray-curable component (a) and the filler as long as the effects of the present invention are not impaired.
  • the additive and other components that do not fall under any of the above may be contained.
  • the other components include thermosetting components, photopolymerization initiators, coupling agents, cross-linking agents and the like.
  • thermosetting component, photopolymerization initiator, coupling agent, and cross-linking agent in the composition (x1-2-1) are the thermosetting components (B) in the composition (x1-1-1), respectively.
  • the other components contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may be only one kind or two or more kinds. When there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the contents of the other components of the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) are not particularly limited and may be appropriately selected depending on the intended purpose.
  • the composition (x1-2-1) preferably further contains a solvent.
  • the solvent-containing composition (x1-2-1) has good handleability.
  • Examples of the solvent contained in the composition (x1-2-1) include the same solvents contained in the composition (x1-1-1) described above.
  • the solvent contained in the composition (x1-2-1) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. it can.
  • the content of the solvent in the composition (x1-2-1) is not particularly limited, and may be appropriately selected depending on, for example, the type of component other than the solvent.
  • composition for forming a first energy ray-curable protective film (x1-2-1) is obtained by blending each component for constituting the composition.
  • the first energy ray-curable resin film forming composition (x1-2-1) is the first thermosetting resin film forming composition described above, except that, for example, the types of compounding components are different. It can be manufactured by the same method as in the case of x1-1-1).
  • FIG. 3 shows a configuration example of the first composite sheet ( ⁇ 1) in which the “first curable resin film (x1)” is also simply referred to as the “first curable resin (x1)”.
  • the first composite sheet ( ⁇ 1) has a layer (X1) of the first curable resin (x1) on one surface of the first support sheet (Y1). It is equipped.
  • the layer (X1) of the first curable resin (x1) is transported as a product package. Or, when the layer (X1) of the first curable resin (x1) is transported in the process, the layer (X1) of the first curable resin (x1) is stably supported and protected.
  • the first composite sheet ( ⁇ 1) is a base material 51, and the first support sheet (Y1) is first curable on one surface of the base material 51.
  • a layer (X1) of resin (x1) is provided.
  • the first composite sheet ( ⁇ 1) is an adhesive sheet in which a base material 51 and an adhesive layer 61 are laminated, like the first composite sheet ( ⁇ 1b) shown in FIG. , The pressure-sensitive adhesive layer 61 of the pressure-sensitive adhesive sheet and the layer (X1) of the first curable resin (x1) may be bonded together.
  • the first composite sheet ( ⁇ 1) has the base material 51, the intermediate layer 71, and the adhesive layer 61 in this order, as in the first composite sheet ( ⁇ 1c) shown in FIG.
  • the pressure-sensitive adhesive layer 61 of the pressure-sensitive adhesive sheet and the layer (X1) of the first curable resin (x1) may be bonded to each other.
  • the pressure-sensitive adhesive sheet in which the base material 51, the intermediate layer 71, and the pressure-sensitive adhesive layer 61 are laminated in this order can be suitably used as a back grind tape. That is, since the first composite sheet ( ⁇ 1c) shown in FIG. 6 has a back grind tape as the first support sheet (Y1), the layer (X1) of the first curable resin (x1) of the first composite sheet ( ⁇ 1c). ) And the bump-forming surface of the semiconductor chip-making wafer, and then the back surface of the semiconductor chip-making wafer is ground and thinned.
  • the first support sheet (Y1) functions as a support for supporting the first curable resin (x1).
  • the first support sheet (Y1) may be composed of only the base material 51, or is a laminate of the base material 51 and the pressure-sensitive adhesive layer 61 as shown in FIG.
  • the base material 51, the intermediate layer 71, and the pressure-sensitive adhesive layer 61 may be laminated in this order.
  • a laminate in which the base material 51, the intermediate layer 71, and the pressure-sensitive adhesive layer 61 are laminated in this order is suitable for use as a back grind sheet (b-BG).
  • the base material of the first support sheet (Y1), the pressure-sensitive adhesive layer and the intermediate layer that the first support sheet (Y1) may have will be described.
  • the base material is in the form of a sheet or a film, and examples of the constituent material thereof include the following various resins.
  • the resin constituting the base material include polyethylenes such as low density polyethylene (LDPE), linear low density polyethylene (LLDPE), and high density polyethylene (HDPE); polypropylene, polybutene, polybutadiene, polymethylpentene, norbornene resin and the like.
  • Polyethylene other than polyethylene ethylene-based copolymers such as ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-norbornene copolymer, etc.
  • Polymer obtained by using ethylene as a monomer Vinyl chloride resin such as polyvinyl chloride and vinyl chloride copolymer (resin obtained by using vinyl chloride as a monomer); Polystyrene; Polycycloolefin; Polymers such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalenedicarboxylate, all aromatic polyesters in which all constituent units have an aromatic cyclic group; two or more kinds of polymers.
  • Vinyl chloride resin such as polyvinyl chloride and vinyl chloride copolymer (resin obtained by using vinyl chloride as a monomer)
  • Polystyrene Polycycloolefin
  • Polymers such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalenedicarboxylate, all aromatic polyesters in
  • Examples thereof include the polymer of the polyester; poly (meth) acrylic acid ester; polyurethane; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone; polyether ketone and the like.
  • the resin constituting the base material for example, a polymer alloy such as a mixture of the polyester and other resins can be mentioned.
  • the polymer alloy of the polyester and the resin other than the polyester preferably has a relatively small amount of the resin other than the polyester.
  • the resin constituting the base material is, for example, a crosslinked resin in which one or more of the resins exemplified above are crosslinked; one or two of the resins exemplified so far. Modified resins such as ionomer using the above can also be mentioned.
  • the resin constituting the base material one type may be used alone, or two or more types may be used in combination.
  • the combination and ratio thereof can be arbitrarily selected.
  • the base material may be only one layer (single layer) or may have two or more layers.
  • the base material has a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
  • the thickness of the base material is preferably 5 ⁇ m to 1,000 ⁇ m, more preferably 10 ⁇ m to 500 ⁇ m, further preferably 15 ⁇ m to 300 ⁇ m, and even more preferably 20 ⁇ m to 150 ⁇ m.
  • the "thickness of the base material” means the thickness of the entire base material, and for example, the thickness of the base material composed of a plurality of layers means the total thickness of all the layers constituting the base material. means.
  • the base material has a high thickness accuracy, that is, a base material in which the variation in thickness is suppressed regardless of the part.
  • a base material in which the variation in thickness is suppressed regardless of the part.
  • materials having high thickness accuracy that can be used to form a base material include, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, and ethylene-vinyl acetate copolymers. And so on.
  • the base material contains various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers). You may.
  • the base material may be transparent, opaque, colored depending on the purpose, or another layer may be vapor-deposited.
  • the first curable resin film (x1) is the first energy ray-curable resin film (x1-2) and the pressure-sensitive adhesive layer is an energy-curable pressure-sensitive adhesive layer, the base material has energy. It is preferable that the line is transmitted.
  • the base material can be produced by a known method.
  • a base material containing a resin can be produced by molding a resin composition containing the resin.
  • the pressure-sensitive adhesive layer is in the form of a sheet or a film and contains a pressure-sensitive adhesive.
  • the adhesive include acrylic resins (adhesives composed of resins having (meth) acryloyl groups), urethane resins (adhesives composed of resins having urethane bonds), and rubber resins (resins having a rubber structure).
  • acrylic resins acrylic resins (adhesives composed of resins having (meth) acryloyl groups), urethane resins (adhesives composed of resins having urethane bonds), and rubber resins (resins having a rubber structure).
  • silicone resin asdhesive made of resin having siloxane bond
  • epoxy resin as adhesive made of resin having epoxy group
  • polyvinyl ether adhesive resin such as polycarbonate and the like.
  • an acrylic resin is preferable.
  • the "adhesive resin” is a concept including both a resin having adhesiveness and a resin having adhesiveness.
  • a resin having adhesiveness for example, not only the resin itself has adhesiveness but also the resin itself has adhesiveness. It also includes a resin that exhibits adhesiveness when used in combination with other components such as additives, and a resin that exhibits adhesiveness due to the presence of a trigger such as heat or water.
  • the adhesive layer may be only one layer (single layer), or may be two or more layers.
  • the pressure-sensitive adhesive layer is a plurality of layers
  • the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
  • the thickness of the pressure-sensitive adhesive layer is preferably 1 ⁇ m to 1000 ⁇ m, more preferably 5 ⁇ m to 500 ⁇ m, and even more preferably 10 ⁇ m to 100 ⁇ m.
  • the "thickness of the pressure-sensitive adhesive layer” means the thickness of the entire pressure-sensitive adhesive layer, and for example, the thickness of the pressure-sensitive adhesive layer composed of a plurality of layers is the sum of all the layers constituting the pressure-sensitive adhesive layer. Means the thickness of.
  • the pressure-sensitive adhesive layer may be formed by using an energy ray-curable pressure-sensitive adhesive or may be formed by using a non-energy ray-curable pressure-sensitive adhesive.
  • the pressure-sensitive adhesive layer formed by using the energy ray-curable pressure-sensitive adhesive can easily adjust the physical properties before and after curing.
  • the intermediate layer is in the form of a sheet or a film, and the constituent material thereof may be appropriately selected depending on the intended purpose and is not particularly limited.
  • the intermediate layer is preferable.
  • the constituent material include urethane (meth) acrylate and the like because they have high unevenness-following property and the adhesiveness of the intermediate layer is further improved.
  • the intermediate layer may be only one layer (single layer), or may be two or more layers.
  • the intermediate layer is a plurality of layers, the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited.
  • the thickness of the intermediate layer can be appropriately adjusted according to the height of the bumps on the surface of the semiconductor to be protected, but it may be 50 ⁇ m to 600 ⁇ m because the influence of the bumps having a relatively high height can be easily absorbed. It is preferably 70 ⁇ m to 500 ⁇ m, more preferably 80 ⁇ m to 400 ⁇ m.
  • the "thickness of the intermediate layer” means the thickness of the entire intermediate layer, and for example, the thickness of the intermediate layer composed of a plurality of layers is the total thickness of all the layers constituting the intermediate layer. means.
  • the first composite sheet ( ⁇ 1) can be manufactured by sequentially laminating the above-mentioned layers so as to have a corresponding positional relationship.
  • the pressure-sensitive adhesive layer or the intermediate layer is laminated on the base material when the first support sheet (Y1) is manufactured
  • the pressure-sensitive adhesive composition or the composition for forming the intermediate layer is coated on the base material.
  • the pressure-sensitive adhesive layer or the intermediate layer can be laminated by drying or irradiating with energy rays.
  • the coating method include a spin coating method, a spray coating method, a bar coating method, a knife coating method, a roll coating method, a roll knife coating method, a blade coating method, a die coating method, and a gravure coating method.
  • the first thermosetting resin composition (x1) is further laminated on the pressure-sensitive adhesive layer. It is possible to directly form the layer (X1) of the first curable resin (x1) by applying 1-1) or the first energy ray-curable resin composition (x1-2-1). .. Similarly, when the pressure-sensitive adhesive layer is further laminated on the intermediate layer already laminated on the base material, the pressure-sensitive adhesive composition may be applied on the intermediate layer to directly form the pressure-sensitive adhesive layer. It is possible.
  • the composition is further applied on the layer formed from the composition to form a new layer. Is possible to form.
  • the layer to be laminated afterwards is formed in advance on another release film using the composition, and the side of the formed layer that is in contact with the release film is different from the side. It is preferable to form a laminated structure of two continuous layers by laminating the exposed surface on the opposite side with the exposed surface of the remaining layers that have already been formed. At this time, it is preferable that the composition is applied to the peeled surface of the peeling film.
  • the release film may be removed if necessary after the laminated structure is formed.
  • the kit of the present invention includes a second curable resin film (x2).
  • the second curable resin film (x2) forms a second curable resin film (r2) as a protective film on a surface (back surface) opposite to the bump forming surface of the semiconductor chip having a bump forming surface having bumps. Used to do.
  • the second curable resin film (x2) (hereinafter, also simply referred to as “second curable resin (x2)”) is appropriately a general curable resin film used for forming a back surface protective film of a semiconductor chip. It can be used, and may have the same material and composition as the above-mentioned first curable resin film (x1), for example. However, since there are generally no bumps or grooves on the back surface of the semiconductor wafer and the semiconductor wafer is smooth, satisfying the requirement (I), which is a preferable condition for the first curable resin film (x1), is satisfied with the second curable resin film. Not required for (x2). Therefore, in the second curable resin (x2), the X value may be 18 or less, or 10,000 or more.
  • the second curable resin (x2) and The composition for forming a curable resin film for forming the second curable resin (x2) preferably contains a colorant (J).
  • the colorant (J) include known ones such as inorganic pigments, organic pigments, and organic dyes.
  • organic pigments and organic dyes examples include aminium pigments, cyanine pigments, merocyanine pigments, croconium pigments, squalium pigments, azulenium pigments, polymethine pigments, naphthoquinone pigments, pyrylium pigments, and phthalocyanines.
  • examples of the inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, and ITO ( Examples thereof include indium tin oxide) dyes and ATO (antimons tin oxide) dyes.
  • the colorant (J) contained in the composition for forming a curable resin film for forming the second curable resin (x2) and the second curable resin (x2) may be only one kind, or two or more kinds. It may be. When there are two or more colorants (J), their combinations and ratios can be arbitrarily selected. When the colorant (J) is used, the content of the colorant (J) in the second curable resin (x2) may be appropriately adjusted according to the intended purpose. For example, as described above, the second cured resin film (r2), which is a cured product formed by curing the second curable resin (x2), may be printed by laser irradiation.
  • the print visibility can be adjusted by adjusting the content of the colorant (J) of the dicurable resin (x2) and adjusting the light transmission of the protective film. Further, by adjusting the content of the colorant (J) of the thermosetting protective film forming film, the design of the protective film can be improved and the grinding marks on the back surface of the semiconductor wafer can be made difficult to see. Considering these points, in the composition for forming a curable resin film for forming the second curable resin (x2), the total content of all the components other than the solvent (composition for forming a protective film (III-)).
  • the ratio of the content of the colorant (J) to the total mass of the solid content of 1) (that is, the content of the colorant (J) of the thermosetting protective film forming film) is 0.1 to 10. It is preferably mass%, more preferably 0.1 to 7.5 mass%, and particularly preferably 0.1 to 5 mass%.
  • the content of the colorant (J) is at least the lower limit value, the effect of using the colorant (J) can be obtained more remarkably. Further, when the content of the colorant (J) is not more than the upper limit value, an excessive decrease in the light transmittance of the second curable resin (x2) is suppressed.
  • the second curable resin film (x2) preferably has high adhesion to the first curable resin film (r1).
  • the second support sheet (Y2) is peeled off from the second curable resin film (x2).
  • the second curable resin film (x2) adheres firmly to the first curable resin film (r1) without peeling from the back surface of the wafer.
  • the second curable resin film (x2) is a wafer from the viewpoint of correcting an error in the attachment position or the like.
  • the film is easily peeled off from the back surface of the wafer (in other words, has high reworkability).
  • the first curable resin film (r1) and the second curable resin film (x2) The peeling force between the two is preferably 25 mN / 25 mm or more, more preferably 28 mN / 25 mm or more, and further preferably 30 mN / 25 mm or more.
  • the peeling force between the first curable resin film (r1) and the second curable resin film (x2) is less than 700 mN / 25 mm. It is more preferably 600 N / 25 mm or less, further preferably 500 mN / 25 mm or less, further preferably 400 mN / 25 mm or more, still more preferably 300 mN / 25 mm or less. ..
  • the peeling force between the first curable resin film (r1) and the second curable resin film (x2) is adjusted by, for example, the size of the diameter of the filler in the second curable resin film (x2). It is possible.
  • the peeling force between the first curable resin film (r1) and the second curable resin film (x2) is a universal tensile tester (Oriente Co., Ltd.) in an environment with a temperature of 23 ° C. and a relative humidity of 50%. It can be measured under the conditions of a peeling angle of 180 ° and a peeling speed of 300 mm / min, in accordance with the method for measuring the peeling force of JIS Z0237: 2009, using a model number: Tensilon RTC-1210A) manufactured by K.K.
  • the peeling force of the second curable resin film (x2) on the silicon wafer (mirror surface) is preferably 3,000 mN / 25 mm or less, more preferably 1,000 mN / 25 mm or less, and 700 mN from the viewpoint of improving reworkability. / 25 mm or less is particularly preferable.
  • the peeling force of the second curable resin film (x2) against the silicon wafer (mirror surface) is a universal tensile tester (manufactured by Orientec Co., Ltd., model number: Tencilon) in an environment with a temperature of 23 ° C and a relative humidity of 50%.
  • RTC-1210A can be used for measurement under the conditions of a peeling angle of 180 ° and a peeling speed of 300 mm / min in accordance with the method for measuring the peeling force of JIS Z0237: 2009.
  • the second curable resin film (x2) is cured to form the second curable resin film (r2)
  • the second curable resin film (r2) becomes the first curable resin film (r1) and the wafer. It is preferable that the film adheres firmly without peeling from the back surface.
  • the second composite sheet ( ⁇ 2) is not particularly limited as long as it has a structure capable of forming a protective film on the back surface of the semiconductor wafer, and for example, the same structure as the first composite sheet ( ⁇ 1) may be adopted. it can.
  • the second support sheet (Y2) included in the second composite sheet ( ⁇ 2) may have the same configuration as the first support sheet (Y1) described above.
  • the second support sheet (Y2) may be composed of only the base material 51 as shown in FIG. 4, like the first support sheet (Y1), and is a group as shown in FIG. It may be a pressure-sensitive adhesive sheet in which the material 51 and the pressure-sensitive adhesive layer 61 are laminated, or may be a pressure-sensitive adhesive sheet in which the base material 51, the intermediate layer 71, and the pressure-sensitive adhesive layer 61 are laminated as shown in FIG. ..
  • the base material, the intermediate layer, and the pressure-sensitive adhesive layer of the second support sheet (Y2) may have the same structure and material as the base material, the intermediate layer, and the pressure-sensitive adhesive layer of the first support sheet (Y1). Good.
  • the second curable resin film (x2) is thermosetting
  • the second support sheet (Y2) is preferably excellent in heat resistance from the viewpoint of suppressing shrinkage and melting in the thermosetting step.
  • the second curable resin film (x2) is energy ray curable
  • the second support sheet (Y2) preferably has energy ray transmittance.
  • the kit of the present invention uses a first curable resin film (x1) and a first curable resin film (r1) as a protective film on both the bump-forming surface and the side surface of a semiconductor chip having a bump-forming surface having bumps.
  • the kit of the present invention is a first curable resin film according to a method for manufacturing a semiconductor chip, which will be described later, using a semiconductor chip manufacturing wafer having a bump forming surface having bumps and a groove as a planned division line.
  • the resin film (x1) is used to form the first cured resin film (r1) as a protective film on both the bump forming surface and the side surface of the semiconductor chip having the bump forming surface provided with bumps, and the second curability.
  • the resin film (x2) is used to form a second cured resin film (r2) as a protective film on the surface of the semiconductor chip opposite to the bump forming surface.
  • the method for manufacturing a semiconductor chip of the present invention includes the following step (S) and the following step (T).
  • the step (S) includes steps (S1) to (S4), and further includes a step (S-BG). .
  • FIG. 7 shows a process schematic diagram of the method for manufacturing a semiconductor chip according to one aspect of the present invention.
  • the step (S) is roughly a step of preparing a wafer for manufacturing a semiconductor chip (S1) and a step of attaching a first curable resin film (x1) (1).
  • the method for manufacturing a semiconductor chip of the present invention is carried out using the kit of the present invention as described above.
  • the step (S) includes the following steps (S1) to (S4) in this order.
  • Step (S1) A step of preparing a wafer for manufacturing a semiconductor chip, in which a groove portion as a planned division line is formed on the bump forming surface of a semiconductor wafer having a bump forming surface having bumps without reaching the back surface.
  • Step (S2) The first curable resin (x1) of the kit of the present invention is pressed and attached to the bump forming surface of the semiconductor chip manufacturing wafer, and the bump forming surface of the semiconductor chip manufacturing wafer is attached.
  • Step / Step (S3) The first curable resin (x1) is coated with the first curable resin (x1) and the first curable resin (x1) is embedded in the groove formed in the wafer for manufacturing the semiconductor chip.
  • Step / Step (S4) of curing the resin (x1) to obtain a wafer for producing a semiconductor chip with a first cured resin film (r1) The division of a wafer for producing a semiconductor chip with a first cured resin film (r1). Step of individualizing along a scheduled line Further, after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or the step ( In S4), the following step (S-BG) is included.
  • -Step (S-BG) A step of grinding the back surface of the wafer for manufacturing a semiconductor chip.
  • the manufacturing method including the step (S) and the step (T) using the kit of the present invention, not only the bump forming surface of the semiconductor chip but also the side surface is covered with the first cured resin film (r1), and the semiconductor chip is further covered.
  • the back surface of the above is also covered with the second cured resin film (r2). Therefore, a semiconductor chip having excellent strength and less likely to peel off of the first cured resin film (r1) as a protective film can be obtained.
  • coated means that a first cured resin film (r1) is formed on the bump-forming surface and the side surface of one semiconductor chip along the shape of the semiconductor chip, and is formed on the back surface of the semiconductor chip. It means that the second cured resin film (r2) was formed. That is, the present invention is clearly different from the sealing technique of confining a plurality of semiconductor chips in a resin.
  • the semiconductor chip of the present invention will be described in detail for each step.
  • the "semiconductor chip” is also simply referred to as a "chip”
  • the “semiconductor wafer” is also simply referred to as a "wafer”.
  • Step (S1) A top view of an example of the semiconductor wafer prepared in the step (S1) is shown in FIG. 8, and a schematic cross-sectional view is shown in FIG.
  • a groove portion 13 as a planned division line is formed on the bump forming surface 11a of the semiconductor wafer 11 having the bump forming surface 11a including the bump 12 without reaching the back surface 11b, for manufacturing a semiconductor chip.
  • Wafer 10 is prepared. In FIG. 8, bumps are not shown.
  • the shape of the bump 12 is not particularly limited, and may be any shape as long as it can be brought into contact with and fixed to an electrode or the like on a substrate for mounting the chip.
  • the bump 12 is spherical, but the bump 12 may be a spheroid.
  • the spheroid may be, for example, a spheroid stretched in the direction perpendicular to the bump forming surface 11a of the wafer 11, or may be pulled horizontally to the bump forming surface 11a of the wafer 11. It may be a stretched spheroid.
  • the bump 12 may have a pillar shape.
  • the height of the bump 12 is not particularly limited and may be appropriately changed according to design requirements. For example, it is 30 ⁇ m to 300 ⁇ m, preferably 60 ⁇ m to 250 ⁇ m, and more preferably 80 ⁇ m to 200 ⁇ m.
  • the "height of the bump 12" means the height at the portion existing at the highest position from the bump forming surface 11a when focusing on one bump.
  • the number of bumps 12 is also not particularly limited, and may be appropriately changed according to design requirements.
  • the wafer 11 is, for example, a semiconductor wafer in which circuits such as wirings, capacitors, diodes, and transistors are formed on the surface.
  • the material of the wafer is not particularly limited, and examples thereof include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.
  • the size of the wafer 11 is not particularly limited, but is usually 8 inches (diameter 200 mm) or more, preferably 12 inches (diameter 300 mm) or more from the viewpoint of improving batch processing efficiency.
  • the shape of the wafer is not limited to a circle, and may be a square shape such as a square or a rectangle. In the case of a square wafer, the size of the wafer 11 is preferably such that the length of the longest side is equal to or larger than the above size (diameter) from the viewpoint of increasing batch processing efficiency.
  • the thickness of the wafer 11 is not particularly limited, but from the viewpoint of facilitating the suppression of warpage due to shrinkage when the first curable resin (x1) is cured, the amount of grinding of the back surface 11b of the wafer 11 is suppressed in a later step. From the viewpoint of shortening the time required for backside grinding, it is preferably 100 ⁇ m to 1,000 ⁇ m, more preferably 200 ⁇ m to 900 ⁇ m, and further preferably 300 ⁇ m to 800 ⁇ m.
  • a plurality of groove portions 13 are formed in a grid pattern as a planned division line when the semiconductor chip manufacturing wafer 10 is fragmented.
  • the plurality of groove portions 13 are notch grooves formed when the blade tip dicing method (Dicing Before Grinding) is applied, and are formed at a depth shallower than the thickness of the wafer 11, and the deepest portion of the groove portions 13 is the wafer 11. It is prevented from reaching the back surface 11b.
  • the plurality of groove portions 13 can be formed by dicing using a conventionally known wafer dicing device including a dicing blade or the like.
  • the plurality of groove portions 13 can also be formed by dicing using a laser or the like instead of a blade.
  • the plurality of groove portions 13 may be formed so that the semiconductor chip to be manufactured has a desired size and shape, and the groove portions 13 do not necessarily have to be formed in a grid pattern as shown in FIG.
  • the size of the semiconductor chip is usually about 0.5 mm ⁇ 0.5 mm to 1.0 mm ⁇ 1.0 mm, but is not limited to this size.
  • the width of the groove portion 13 is preferably 10 ⁇ m to 2,000 ⁇ m, more preferably 30 ⁇ m to 1,000 ⁇ m, still more preferably 40 ⁇ m to 500 ⁇ m, from the viewpoint of improving the embedding property of the first curable resin (x1). Even more preferably, it is 50 ⁇ m to 300 ⁇ m.
  • the depth of the groove portion 13 is adjusted according to the thickness of the wafer to be used and the required chip thickness, and is preferably 30 ⁇ m to 700 ⁇ m, more preferably 60 ⁇ m to 600 ⁇ m, and further preferably 100 ⁇ m to 500 ⁇ m.
  • the aspect ratio of the groove 13 may be 2 to 6, 2.5 to 5, or 3 to 5.
  • the semiconductor chip manufacturing wafer 10 prepared in the process (S1) is used in the process (S2).
  • Step (S2) The outline of the step (S2) is shown in FIG.
  • the first curable resin (x1) of the kit of the present invention is pressed and attached to the bump forming surface 11a of the semiconductor chip manufacturing wafer 10.
  • the first curable resin (x1) contained in the kit of the present invention is preferably used by being laminated on a support sheet from the viewpoint of its handleability. Therefore, in the step (S2), a laminated structure in which the first support sheet (Y1) and the layer (X1) of the first curable resin (x1) are laminated on the bump forming surface 11a of the semiconductor chip manufacturing wafer 10 is formed. It is preferable that the first composite sheet ( ⁇ 1) to be attached is attached by pressing the layer (X1) as a attachment surface.
  • the bump forming surface 11a of the semiconductor chip manufacturing wafer 10 is covered with the first curable resin (x1), and the groove portion formed in the semiconductor chip manufacturing wafer 10 is formed.
  • the first curable resin (x1) is embedded in 13.
  • the side surface of the semiconductor chip is formed when the semiconductor chip manufacturing wafer 10 is fragmented in the step (S4).
  • the portion to be formed can be coated with the first curable resin (x1). That is, the first cured resin film (r1) that covers the side surface of the semiconductor chip, which is necessary for improving the strength of the semiconductor chip and suppressing the peeling of the first cured resin film (r1) as the protective film. ) Can be formed by the step (S2).
  • the pressing force when the first composite sheet ( ⁇ 1) is attached to the wafer 10 for manufacturing a semiconductor chip is preferable from the viewpoint of improving the embedding property of the first curable resin (x1) in the groove portion 13. Is 1 kPa to 200 kPa, more preferably 5 kPa to 150 kPa, and even more preferably 10 kPa to 100 kPa.
  • the pressing force when the first composite sheet ( ⁇ 1) is attached to the semiconductor chip manufacturing wafer 10 may be appropriately changed from the initial stage to the final stage of the attachment. For example, from the viewpoint of improving the embedding property of the first curable resin (x1) in the groove portion 13, it is preferable to lower the pressing force at the initial stage of application and gradually increase the pressing force.
  • the first curable resin (x1) is a thermosetting resin
  • the groove portion of the first curable resin (x1) It is preferable to perform heating from the viewpoint of improving the embedding property in 13.
  • the first curable resin (x1) is a thermosetting resin
  • the fluidity of the first curable resin (x1) is temporarily increased by heating, and the first curable resin (x1) is cured by continuing heating. Therefore, by heating within the range in which the fluidity of the first curable resin (x1) is improved, the first curable resin (x1) can be easily spread over the entire groove portion 13, and the first curable resin (x1) can be easily distributed. Can be further improved in embedding property in the groove portion 13.
  • the specific heating temperature (pasting temperature) is preferably 50 ° C. to 150 ° C., more preferably 60 ° C. to 130 ° C., and even more preferably 70 ° C. to 110 ° C.
  • the heat treatment performed on the first curable resin (x1) is not included in the curing treatment of the first curable resin (x1).
  • the first composite sheet ( ⁇ 1) is attached to the wafer 10 for manufacturing a semiconductor chip, it is preferable to perform it in a reduced pressure environment.
  • the groove portion 13 becomes a negative pressure, and the first curable resin (x1) easily spreads over the entire groove portion 13.
  • the specific pressure in the reduced pressure environment is preferably 0.001 kPa to 50 kPa, more preferably 0.01 kPa to 5 kPa, and even more preferably 0.05 kPa to 1 kPa.
  • the thickness of the layer (X1) of the first curable resin (x1) in the first composite sheet ( ⁇ 1) further improves the embedding property of the first curable resin (x1) in the groove portion 13. From the viewpoint, it is preferably more than 30 ⁇ m and 200 ⁇ m or less, more preferably 60 ⁇ m to 150 ⁇ m, and further preferably 80 ⁇ m to 130 ⁇ m.
  • the layer (X1) of the first curable resin (x1) is first cured on the bump 12 when the first composite sheet ( ⁇ 1) is attached to the bump forming surface 11a of the semiconductor chip manufacturing wafer 10. From the viewpoint of facilitating the residual of the sex resin (x1), from the viewpoint of facilitating the suppression of the protrusion of the layer (X1) of the first curable resin (x1), the first curable resin (x1) on the bump forming surface 11a. ) And its cured product, the first cured resin film (r1), from the viewpoint of facilitating the suppression of repelling, and from the viewpoint of improving the embedding property of the first curable resin (x1) in the groove portion 13, It is preferable to meet the requirement (I).
  • the first support sheet (Y1) contained in the first composite sheet ( ⁇ 1) supports the first curable resin (x1) and also has a function as a back grind sheet.
  • the first support sheet (Y1) functions as a back grind sheet, and the back grind process is performed. It can be easy.
  • Step (S3), Step (S4), Step (S-BG), and Step (T) By the steps up to the above step (S2), a laminated body in which the first composite sheet ( ⁇ 1) is attached to the wafer 10 for manufacturing a semiconductor chip and laminated is formed. It is preferable that the laminate is subjected to the step according to any one of the first to third embodiments described below, depending on the timing of the step (S-BG) and the step (T). ..
  • the steps (S3) and (S4) will be described with respect to the first to fourth embodiments, with explanations regarding the timing of carrying out the steps (S-BG) and the steps (T).
  • FIG. 7 shows a schematic view of the first embodiment.
  • the step (S-BG) is carried out. Specifically, as shown in FIG. 11 (1-a), the back surface 11b of the semiconductor chip manufacturing wafer 10 is ground with the first composite sheet ( ⁇ 1) attached. “BG” in FIG. 11 means back grind, and the same applies to the subsequent drawings. Next, as shown in (1-b) of FIG. 11, the first support sheet (Y1) is peeled from the first composite sheet ( ⁇ 1). The amount of grinding when grinding the back surface 11b of the semiconductor chip manufacturing wafer 10 may be at least an amount that exposes the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10, but further grinding is performed for semiconductor chip manufacturing.
  • the first curable resin (x1) embedded in the groove 13 may be ground.
  • the first curable resin (x1) is a thermosetting resin and is cured in the step (S3).
  • the first support sheet (Y1) is not required to have heat resistance even when the heat treatment for the purpose is carried out. Therefore, the degree of freedom in designing the first support sheet (Y1) is improved.
  • Step (S3) After carrying out the step (S-BG), the step (S3) is carried out. Specifically, as shown in FIG. 11 (1-c), the first curable resin (x1) is cured to obtain a wafer 10 for manufacturing a semiconductor chip with the first curable resin film (r1). The first curable resin film (r1) formed by curing the first curable resin (x1) becomes stronger than the first curable resin (x1) at room temperature. Therefore, the bump neck is well protected by forming the first cured resin film (r1). Further, in the step (S4) shown in FIG. 11 (1-d), the side surface of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) is also separated by the first cured resin film (r1). A semiconductor chip coated with r1) can be obtained, and a semiconductor chip having excellent strength can be obtained. Moreover, the peeling of the first cured resin film (r1) as the protective film is also suppressed.
  • the first curable resin (x1) can be cured by either thermosetting or curing by irradiation with energy rays, depending on the type of curable component contained in the first curable resin (x1). it can.
  • the curing temperature is preferably 100 to 200 ° C, more preferably 110 to 170 ° C, and particularly preferably 120 to 150 ° C.
  • the heating time during the thermosetting is preferably 0.5 to 5 hours, more preferably 0.5 to 4 hours, and particularly preferably 1 to 3 hours.
  • the conditions for curing by energy ray irradiation are appropriately set depending on the type of energy ray to be used.
  • the illuminance is preferably 180 to 280 mW / cm 2 , and the amount of light is preferably 450. It is ⁇ 1000 mJ / cm 2 .
  • the first curable resin (x1) is preferably a thermosetting resin. That is, when the first curable resin (x1) is a thermosetting resin, the fluidity of the first curable resin (x1) is temporarily increased by heating, and the first curable resin (x1) is cured by continuing heating.
  • the first curable resin (x1) can be cured after the embedding property of the first curable resin (x1) in the groove portion 13 is improved. Further, from the viewpoint of shortening the curing time, the first curable resin (x1) is preferably an energy ray-curable resin.
  • Step (T) After carrying out the step (S3), the step (T) is carried out. Specifically, as shown in FIGS. 11 (1-d) and (1-f), the step (T) includes the following steps (T1-1) and (T1-2) in this order.
  • Step (T1-1) After the step (S-BG) and before the step (S4), the second curable resin (x2) of the kit is applied to the back surface of the semiconductor chip manufacturing wafer.
  • step (T1-2) is carried out before the step (S4)
  • step (T1-2) may be carried out after the step (S4).
  • the timing of carrying out the step (T1-1) may be after the step (S-BG) and before the step (S4), and is not necessarily limited after the step (S3). This also applies when the step (T1-2) is carried out before the step (S4).
  • the step (T1-1) may be carried out before the step (S3), and the step (S3) and the step (T1-2) may be carried out at the same time.
  • the step (S3) and the step (T1-2) can be carried out at the same time.
  • the first curable resin (x1) and the second curable resin (x2) can be thermosetting together to form the first curable resin film (r1) and the second curable resin film (r2) at the same time.
  • the conditions for thermosetting are preferably a curing temperature of 100 to 200 ° C, more preferably 110 to 170 ° C, and 120 to 150 ° C. Is particularly preferable.
  • the heating time during the thermosetting is preferably 0.5 to 5 hours, more preferably 0.5 to 4 hours, and particularly preferably 1 to 3 hours.
  • the conditions for curing by energy ray irradiation are appropriately set depending on the type of energy ray to be used.
  • the illuminance is preferably 180 to 280 mW / cm 2
  • the amount of light is preferably 450. It is ⁇ 1000 mJ / cm 2 .
  • the step (T) it is possible to use a second composite sheet ( ⁇ 2) having a laminated structure in which the second support sheet (Y2) and the layer (X2) of the second curable resin (x2) are laminated.
  • the step (T1) has a laminated structure in which a second support sheet (Y2) and a layer (X2) of a second curable resin (x2) are laminated on the back surface of a wafer for manufacturing a semiconductor chip.
  • the composite sheet ( ⁇ 2) is attached to the layer (X2) as the attachment surface.
  • the timing of peeling the second support sheet (Y2) from the second composite sheet ( ⁇ 2) may be between the step (T1-1) and the step (T1-2), and the step (T1-2) may be performed. ) May be followed.
  • the second composite sheet ( ⁇ 2) is used in the step (T1-1)
  • the second support sheet (Y2) contained in the second composite sheet ( ⁇ 2) supports the second curable resin (x2).
  • the second composite sheet ( ⁇ 2) is attached to the back surface 11b of the semiconductor wafer 10 with the first cured resin film (r1) in the step (S4) by dicing.
  • the second support sheet (Y2) functions as a dicing sheet, which makes it easy to carry out dicing.
  • Step (S4) a portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove is cut along the planned division line. .. At this time, the second curable resin (x2) or the second curable resin film (r2) is also cut at once. Specifically, as shown in FIG. 11 (1-f), it is formed in the groove portion of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1). The portion is cut along the planned division line, and at this time, the second curable resin (x2) or the second curable resin film (r2) is also cut at once.
  • a curing treatment is performed after performing the step (S4) to form a second cured resin film (r2) (step (T1-2)).
  • the cutting can be appropriately carried out by adopting a conventionally known method such as blade dicing or laser dicing.
  • a semiconductor chip 40 is obtained in which the bump forming surface 11a and the side surface are continuously coated with the first cured resin film (r1) without a break, and the back surface 11b is coated with the second cured resin film (r2). Can be done.
  • the semiconductor chip 40 has excellent strength because the bump forming surface 11a and the side surface are coated with the first cured resin film (r1) and the back surface 11b is coated with the second cured resin film (r2).
  • the bonding surface (interface) between the bump forming surface 11a and the first cured resin film (r1) is the semiconductor chip 40. Not exposed on the sides.
  • the exposed portion exposed on the side surface of the semiconductor chip 40 tends to be the starting point of film peeling. Since the semiconductor chip 40 of the present invention does not have the exposed portion, film peeling from the exposed portion is unlikely to occur in the process of cutting the wafer 10 for manufacturing the semiconductor chip to manufacture the semiconductor chip 40 or after the manufacturing.
  • the semiconductor chip 40 in which the peeling of the first cured resin film (r1) as the protective film is suppressed can be obtained. Further, the adhesion between the first cured resin film (r1) and the second cured resin film (r2) is also good, and peeling is unlikely to occur.
  • the portion of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove is cut along the planned division line.
  • the first cured resin film (r1) is transparent. Since the first cured resin film (r1) is transparent, the semiconductor wafer 11 can be seen through, so that the visibility of the planned division line is ensured. Therefore, it becomes easy to cut along the planned division line.
  • FIG. 4 shows a schematic view of the second embodiment.
  • Step (S3) In the second embodiment, first, the step (S3) is carried out. Specifically, as shown in (2-a) of FIG. 12, the first curable resin (x1) is cured with the first composite sheet ( ⁇ 1) attached, and the first curable resin film (r1) is cured. ) Is obtained. The first curable resin film (r1) formed by curing the first curable resin (x1) becomes stronger than the first curable resin (x1) at room temperature. Therefore, the bump neck is well protected by forming the first cured resin film (r1).
  • the semiconductor chip whose side surface is also covered with the first cured resin film (r1) by separating the wafer 10 for manufacturing the semiconductor chip with the first cured resin film (r1) into pieces. Can be obtained, and a semiconductor chip having excellent strength can be obtained. Moreover, the peeling of the first cured resin film (r1) as the protective film is also suppressed.
  • the curing method include the same curing methods as those described in the first embodiment.
  • the flow on the surface of the curable resin (x1) can be suppressed, and the flatness of the first cured resin film (r1) on the bump forming surface can be improved. Further, by curing the first curable resin (x1) before grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, the warp of the semiconductor chip manufacturing wafer 10 is suppressed.
  • Step (S-BG) After carrying out the step (S3), the step (S-BG) is carried out.
  • the back surface 11b of the semiconductor chip manufacturing wafer 10 is ground with the first composite sheet ( ⁇ 1) attached.
  • the amount of grinding when grinding the back surface 11b of the semiconductor chip manufacturing wafer 10 may be at least an amount that exposes the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10, but the semiconductor chip is further ground.
  • the first cured resin film (r1) embedded in the groove 13 may be ground together with the manufacturing wafer 10.
  • the first support sheet (Y1) is peeled from the first composite sheet ( ⁇ 1).
  • Step (T) After carrying out the step (S3), the step (T) is carried out. Specifically, as shown in FIGS. 12 (2-d) and (2-e), the step (T) includes the following steps (T1-1) and (T1-2) in this order.
  • Step (T1-1) After the step (S-BG) and before the step (S4), the second curable resin (x2) of the kit is applied to the back surface of the semiconductor chip manufacturing wafer.
  • the step (T1-2) is carried out before the step (S4) has been described as an example, but the step (T1-2) may be carried out after the step (S4). ..
  • the timing of carrying out the step (T1-1) may be after the step (S-BG) and before the step (S4), and is not necessarily after the step (S3) as in the first embodiment. Not limited. This also applies when the step (T1-2) is carried out before the step (S4).
  • the step (T1-1) may be carried out before the step (S3), and the step (S3) and the step (T1-2) may be carried out at the same time.
  • the second support sheet (Y2) and the second curable resin (x2) layer (X2) have a laminated structure in which the second support sheet (Y2) is laminated. It is preferable to use a composite sheet ( ⁇ 2).
  • Step (S4) After the step (T) is carried out, the step (S4) is carried out in the same manner as in the first embodiment. Specifically, as shown in FIG. 12 (2-f), the groove portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) is formed. The portion is cut along the planned division line. At this time, the second curable resin (x2) or the second curable resin film (r2) is also cut at once. When the second curable resin (x2) is uncured, a curing treatment is performed after performing the step (S4) to form a second cured resin film (r2) (step (T1-2)).
  • the cutting can be appropriately carried out by adopting a conventionally known method such as blade dicing or laser dicing.
  • a conventionally known method such as blade dicing or laser dicing.
  • the semiconductor chip 40 since the bump forming surface 11a and the side surface are coated with the first cured resin film (r1) and the back surface 11b is coated with the second cured resin film (r2). Since the bump forming surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), the semiconductor chip 40 has excellent strength. Further, for the reason described above, the semiconductor chip 40 in which the peeling of the first cured resin film (r1) as the protective film is suppressed can be obtained. Further, the adhesion between the first cured resin film (r1) and the second cured resin film (r2) is also good, and peeling is unlikely to occur.
  • the third embodiment is common to the second embodiment in that the step (S-BG) is performed after the step (S3) and before the step (S4). However, it differs from the second embodiment in that a back grind sheet (b-BG) is used separately.
  • FIG. 13 shows a schematic view of the third embodiment.
  • step (S3) In the third embodiment, first, the step (S3) is performed, but before that, as shown in (3-a) of FIG. 13, the first composite sheet ( ⁇ 1) to the first support sheet (Y1) are formed. Peel off. Then, the step (S3) is carried out. Specifically, as shown in FIG. 13 (3-b), the first curable resin (x1) is cured to obtain a wafer 10 for manufacturing a semiconductor chip with the first curable resin film (r1). Examples of the curing method include the same curing methods as those described in the first embodiment.
  • the first curable resin (x1) is a thermosetting resin, and heat treatment for curing is carried out in the step (S3). Even if this is the case, the first support sheet (Y1) is not required to have heat resistance. Therefore, the degree of freedom in designing the first support sheet (Y1) is improved. Further, by curing the first curable resin (x1) before grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, the warp of the semiconductor chip manufacturing wafer 10 is suppressed.
  • step (S-BG) After carrying out the step (S3), the step (S-BG) is carried out. Specifically, as shown in FIG. 13 (3-c), a back grind sheet (b) is formed on the surface of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1). -BG) is attached. Next, as shown in FIG. 13 (3-d), the back surface 11b of the semiconductor chip manufacturing wafer 10 is ground with the back grind sheet (b-BG) attached, and then the first cured resin film (r1) is formed. The back grind sheet (b-BG) is peeled off from the wafer 10 for manufacturing a semiconductor chip.
  • the first curable resin (x1) is a thermosetting resin, and heat treatment for curing is carried out in the step (S3). Even in this case, the back grind sheet (b-BG) is not required to have heat resistance. Therefore, the degree of freedom in designing the back grind sheet (b-BG) is improved.
  • the amount of grinding when grinding the back surface 11b of the semiconductor chip manufacturing wafer 10 may be at least an amount that exposes the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10, but the semiconductor chip is further ground.
  • the first cured resin film (r1) embedded in the groove 13 may be ground together with the manufacturing wafer 10.
  • step (T) After carrying out the step (S3), the step (T) is carried out. Specifically, as shown in FIGS. 13 (3-e) and (3-f), the step (T) includes the following steps (T1-1) and (T1-2) in this order.
  • Step (T1-1) After the step (S-BG) and before the step (S4), the second curable resin (x2) of the kit is applied to the back surface of the semiconductor chip manufacturing wafer.
  • step (T1-2) is carried out before the step (S4) has been described as an example, but the step (T1-2) may be carried out after the step (S4). ..
  • the timing of carrying out the step (T1-1) may be after the step (S-BG) and before the step (S4), and is not necessarily limited after the step (S3). This also applies when the step (T1-2) is carried out before the step (S4).
  • the step (T1-1) may be carried out before the step (S3), and the step (S3) and the step (T1-2) may be carried out at the same time.
  • the second support sheet (Y2) and the second curable resin (x2) layer (X2) have a laminated structure in which the second support sheet (Y2) is laminated. It is preferable to use a composite sheet ( ⁇ 2).
  • step (S4) After the step (T) is carried out, the step (S4) is carried out in the same manner as in the first embodiment and the second embodiment. Specifically, as shown in (3-g) of FIG. 13, the groove portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) is formed. The portion is cut along the planned division line. At this time, the second curable resin (x2) or the second curable resin film (r2) is also cut at once. When the second curable resin (x2) is uncured, a curing treatment is performed after performing the step (S4) to form a second cured resin film (r2) (step (T1-2)).
  • the cutting can be appropriately carried out by adopting a conventionally known method such as blade dicing or laser dicing.
  • a conventionally known method such as blade dicing or laser dicing.
  • the semiconductor chip 40 since the bump forming surface 11a and the side surface are coated with the first cured resin film (r1) and the back surface 11b is coated with the second cured resin film (r2). Since the bump forming surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), the semiconductor chip 40 has excellent strength. Further, for the reason described above, the semiconductor chip 40 in which the peeling of the first cured resin film (r1) as the protective film is suppressed can be obtained. Further, the adhesion between the first cured resin film (r1) and the second cured resin film (r2) is also good, and peeling is unlikely to occur.
  • FIG. 14 shows a schematic view of the fourth embodiment.
  • Step (S3) In the third embodiment, first, the step (S3) is performed, but before that, as shown in (4-a) of FIG. 14, the first composite sheet ( ⁇ 1) to the first support sheet (Y1) are formed. Peel off. Then, the step (S3) is carried out. Specifically, as shown in FIG. 14 (4-b), the first curable resin (x1) is cured to obtain a wafer 10 for manufacturing a semiconductor chip with the first curable resin film (r1). Examples of the curing method include the same curing methods as those described in the first embodiment.
  • the first curable resin (x1) is a thermosetting resin, and heat treatment for curing is carried out in the step (S3). Even if this is the case, the first support sheet (Y1) is not required to have heat resistance. Therefore, the degree of freedom in designing the first support sheet (Y1) is improved. Further, by curing the first curable resin (x1) before grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, the warp of the semiconductor chip manufacturing wafer 10 is suppressed.
  • Step (S4) including Step (S-BG) After performing the step (S3), as shown in (4-c) of FIG. 14, the groove 13 of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1). Make a cut along the planned division line in the part formed in.
  • the depth of cut is preferably a depth that reaches the deepest portion of the groove portion 13 from the viewpoint of facilitating individualization.
  • the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) is fragmented along the notch.
  • the portion of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove 13 is modified along the planned division line.
  • a quality region may be formed.
  • the modified region can be formed by laser or plasma treatment or the like.
  • the step (S-BG) described later cracks are generated starting from the modified region, and the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) is fragmented along the modified region. Will be done.
  • the step (S-BG) is carried out. Specifically, as shown in FIG.
  • a back grind sheet (b) is formed on the surface of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1).
  • -BG first cured resin film
  • the back surface 11b of the semiconductor chip manufacturing wafer 10 is ground with the back grind sheet (b-BG) attached.
  • the amount of grinding when grinding the back surface 11b of the semiconductor chip manufacturing wafer 10 may be at least an amount that exposes the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10, but the semiconductor chip is further ground.
  • the first cured resin film (r1) embedded in the groove 13 may be ground together with the manufacturing wafer 10. Since the bump forming surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), the semiconductor chip 40 has excellent strength. Since the back grind sheet (b-BG) is not used in the step (S3), the first curable resin (x1) is a thermosetting resin, and heat treatment for curing is carried out in the step (S3). Even if this is the case, the back grind sheet (b-BG) is not required to have heat resistance. Therefore, the degree of freedom in designing the back grind sheet (b-BG) is improved.
  • Step (T) After carrying out the step (S4) including the step (S-BG), the step (T) is carried out. Specifically, as shown in (4-f) of FIG. 14, the step (T) includes the following steps (T2-1) and the following steps (T2-2) in this order. In FIG. 14, the step (T2-2) is not shown.
  • Step (T) includes the following step (T2-3) before or after the step (T2-2).
  • the method of carrying out the step (T2-3) is particularly limited. However, a known method can be appropriately adopted. Specifically, it is expanded by forming a modified region inside the second curable resin layer (x2) or the second curable resin film (r2) by a cutting method using a blade or a laser, or by a laser or plasma. Examples include a method of dividing.
  • the semiconductor chip 40 in which the bump forming surface 11a and the side surface are coated with the first cured resin film (r1) and the back surface 11b is coated with the second cured resin film (r2). Since the bump forming surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), the semiconductor chip 40 has excellent strength. Further, for the reason described above, the semiconductor chip 40 in which the peeling of the first cured resin film (r1) as the protective film is suppressed can be obtained. Further, the adhesion between the first cured resin film (r1) and the second cured resin film (r2) is also good, and peeling is unlikely to occur.
  • a resin layer (Z1) for back grind may be formed instead of the first support sheet (Y1) or back grind sheet (b-BG). Specifically, after coating the surface of the first cured resin film (r1) with a fluid resin (z1) and also covering the bumps exposed from the first cured resin film (r1). By curing the resin (z1) to form a resin layer (Z1) for back grind, the grinding process can be performed as a substitute for the back grind sheet.
  • the resin layer (Z1) for back grind which is no longer needed after the step (S-BG), can be easily peeled off.
  • One aspect of the method for manufacturing a semiconductor chip of the present invention may include other steps as long as the gist of the present invention is not deviated.
  • Examples of such a treatment include a wet etching treatment and a dry etching treatment on the bump forming surface after the protective film (first cured resin film (r1)) is formed.
  • Polymer component (A) Polyvinyl butyral having structural units represented by the following formulas (i) -1, (i) -2 and (i) -3 ("Eslek BL-10" manufactured by Sekisui Chemical Industry Co., Ltd., weight average molecular weight 25,000, glass transition temperature 59 ° C.). (In the equation, l 1 is about 28, m 1 is 1-3, and n 1 is an integer of 68-74.)
  • Thermosetting agent (B2) O-cresol type novolak resin ("Phenolite KA-1160" manufactured by DIC Corporation)
  • Thermosetting Resin Film Forming Composition (x1-1-1) (1) Production of Thermosetting Resin Film Forming Composition (x1-1-1a) Polymer Component (A) (100 parts by mass) , Epoxy resin (B1) -1 (350 parts by mass), Epoxy resin (B1) -2 (270 parts by mass), Thermosetting agent (B2) (190 parts by mass), Curing accelerator (C) (2 parts by mass) , Filler (D) (90 parts by mass), and Additive (I) -3 (9 parts by mass) are dissolved or dispersed in methyl ethyl ketone, and stirred at 23 ° C. to obtain all the components other than the solvent. A composition for forming a thermosetting resin film (x1-1-1a) having a total concentration of 45% by mass was obtained. The blending amounts of the components other than the solvent shown here are all the blending amounts of the target product containing no solvent.
  • Second curable resin film (x2) 2-1 Raw Materials for Producing the Second Thermosetting Resin Film Forming Composition (x2-1-1)
  • the raw materials used for producing the second thermosetting resin film forming composition (x2-1-1) are shown below.
  • Epoxy resin (b) (B1) -1: Bisphenol A type epoxy resin (jER828 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 184 to 194 g / eq) (B1) -2: Dicyclopentadiene type epoxy resin (Epoxy HP-7200HH manufactured by DIC Corporation, epoxy equivalent 255 to 260 g / eq) (3) Hardener (b2) Biphenyl aralkyl type phenol resin (manufactured by Meiwa Kasei Co., Ltd., MEHC-7851-H, hydroxyl group equivalent 218 g / eq) (4) Curing accelerator (c) 2-Phenyl-4,5-dihydroxymethylimidazole ("Curesol 2PHZ-PW" manufactured by Shikoku Chemicals Corporation) (5) Filler (d) Spherical silica modified with epoxy group (5SE-CH1, manufactured by Admatex, average particle size 500 nm) (6) Coupling agent (e) 3-glycidoxypropyltrimethoxys
  • thermosetting resin film forming composition (x2-1-1) (2) thermosetting resin film forming composition (x2-1-1a) and second thermosetting resin film Production of (x2-1a) Polymer component (a), epoxy resin (b1) -1, epoxy resin (b1) -2, curing agent (b2), curing accelerator (c), filler (d), cup
  • the content of the ring agent (e) and the colorant (J) (solid content, parts by mass) is 150/70/30/5/2/320/2/18 (solid weight ratio).
  • a composition for forming a second thermosetting resin film (x2-1-1a) having a solid content concentration of 52% by mass was prepared by dissolving or dispersing in methyl ethyl ketone and stirring at 23 ° C.
  • a release film (“SP-PET38131” manufactured by Lintec Corporation, thickness 38 ⁇ m) in which one side of a polyethylene terephthalate film was peeled by a silicone treatment was used, and the composition (x2-) obtained above was used on the peeled surface. 1-1a) is applied, another release film (“SP-PET382150” manufactured by Lintec Corporation) is attached to the exposed surface, and then heated and dried at 120 ° C. for 2 minutes to obtain the thickness sandwiched between the release films. A 25 ⁇ m second thermosetting resin film (x2-1a) was formed. At the time of various tests, this was used in a roll shape.
  • thermosetting resin film (x1-1-1b) (2) Production of Second Thermosetting Resin Film Forming Composition (x1-1-1b) and Second Thermosetting Resin Film (x1-1b) "1-2.
  • Thermosetting Resin Film Forming Composition The composition for forming a thermosetting resin film (x1-1) described in "(2) Production of a composition for forming a thermosetting resin film (x1-1-1b)" of "Production of (x1-1-1)".
  • the second thermosetting property having a thickness of 25 ⁇ m is obtained by the same method except that 3 parts by mass of a colorant (j) (black pigment (multi-rack A903 black manufactured by Toyo Ink Co., Ltd.)) is added to the composition of -1b).
  • a resin film (x1-1b) was produced.
  • thermosetting resin film (x1-1) 3-1 Manufacture of First Composite Sheet ( ⁇ 1) A back grind tape (“E-8510HR” manufactured by Lintec Co., Ltd.) was used as the first support sheet (Y1), and this back grind tape and the release film obtained above were used. The first thermosetting resin film (x1-1a) and the first thermosetting resin film (x1-1b) were bonded together. As a result, a first composite sheet ( ⁇ 1) in which the first support sheet (Y1) and the first thermosetting resin film (x1-1) were laminated was obtained.
  • E-8510HR manufactured by Lintec Co., Ltd.
  • first thermosetting resin film (x1-1a) and first thermosetting resin film (x1-1b) test pieces were prepared.
  • the installation location of the test piece is kept warm at 90 ° C. in advance, and the first thermosetting resin film (x1) obtained above is placed at this installation location.
  • a test piece of -1a) and the first thermosetting resin film (x1-1b) was placed, and the test piece was fixed to the installation location by pressing a measuring jig against the upper surface of the test piece. Then, under the conditions of a temperature of 90 ° C.
  • the strain generated in the test piece was gradually increased in the range of 0.01% to 1000%, and the storage elastic modulus Gc of the test piece was measured. Then, the X value was calculated from the measured values of Gc1 and Gc300. The results are shown in Table 1.
  • thermosetting resin film (x1-1) Measurement of the amount of protrusion of the first thermosetting resin film (x1-1) Using a release film (“SP-PET38131” manufactured by Lintec Co., Ltd., thickness 38 ⁇ m) in which one side of the polyethylene terephthalate film was peeled by silicone treatment, was used. The peeling-treated surface is coated with the composition (x1-1-1a) and the composition (x1-1-1b) obtained above, respectively, and heat-dried at 120 ° C. for 2 minutes to obtain a thickness. A 30 ⁇ m first thermosetting resin film (x1-1a) and a first thermosetting resin film (x1-1b) were formed.
  • SP-PET38131 manufactured by Lintec Co., Ltd., thickness 38 ⁇ m
  • FIG. 15 is a plan view schematically showing a state in which the obtained laminate is viewed from above on the back grind tape side.
  • the obtained laminate 101 has a back grind tape 107, a test piece 120 (first thermosetting resin film (x1-1)), and a release film in this order. It is constructed by stacking in the vertical direction.
  • the release film is removed from the obtained laminate, and the newly generated exposed surface of the test piece (in other words, the surface of the test piece opposite to the side on which the back grind tape is provided) is removed.
  • the test piece was attached to the surface of the silicon wafer by crimping it onto one surface of the silicon wafer having a diameter of 12 inches.
  • the test piece was attached using a pasting device (roller type laminator, "RAD-3510 F / 12" manufactured by Lintec Corporation), table temperature: 90 ° C., pasting speed: 2 mm / sec, pasting pressure: 0.
  • the first thermosetting resin film (x1-1) was heated under the conditions of 5 MPa and roller sticking height: ⁇ 200 ⁇ m.
  • the maximum value of the length of the line segment connecting two different points on the outer circumference thereof is measured, and the measured value (the line segment) is measured.
  • the test piece in other words, the first thermosetting resin film (x1-1a)) and the first thermosetting resin film (x1-) by the method described with reference to FIG. 2 using the maximum value of the length).
  • the amount of protrusion (mm) of 1b)) was calculated. The results are shown in Table 1. When the amount of protrusion was 170 mm, it was determined that there was no change in shape from the original test piece and no protrusion had occurred. On the other hand, when the amount of protrusion exceeds 170 mm, it is determined that the shape has changed from the original test piece and the protrusion has occurred.
  • the first composite sheet ( ⁇ 1) is attached using a pasting device (roller type laminator, Lintec Corporation "RAD-3510 F / 12") at a table temperature of 90 ° C., a sticking speed of 2 mm / sec, and sticking.
  • the first composite sheet ( ⁇ 1) was heated under the conditions of pressure: 0.5 MPa and roller attachment height: ⁇ 200 ⁇ m.
  • thermosetting resin film (x1-1a) and the first thermosetting resin film (x1-1b) are first.
  • the support sheet (Y1) was removed to expose the first thermosetting resin film (x1-1a) and the first thermosetting resin film (x1-1b).
  • SEM scanning electron microscope
  • VE-9700 manufactured by KEYENCE CORPORATION
  • thermosetting resin film (x1-1) On the bump forming surface
  • the first thermosetting resin film (x1-1a) and the first thermosetting on the surface of the semiconductor chip on the bump forming surface The presence or absence of repelling due to the cured product of the sex resin film (x1-1b) was examined using a 12-inch semiconductor wafer on which no pump was formed. Specifically, in the case of the above-mentioned "3-4. Confirmation of the presence or absence of the remaining thermosetting resin film (x1-1) on the upper part of the bump" using a 12-inch silicon wafer on which no pump is formed.
  • the first composite sheet ( ⁇ 1) was attached in the same manner, and the first support sheet (Y1) was removed from the first thermosetting resin film (x1-1).
  • the first thermosetting resin film attached to the semiconductor wafer was subjected to a pressure oven (“RAD-9100” manufactured by Lintec) at a temperature of 130 ° C., a time of 2 hours, and a furnace pressure of 0.
  • the first thermosetting resin film (x1-1a) and the first thermosetting resin film (x1-1b) were thermally cured by heat treatment under a heating condition of 5 MPa.
  • thermosetting resin film (x1-1a) and the first thermosetting resin film (x1-1b) were used.
  • the entire laminate of the resin film (r1)) and the semiconductor wafer was observed from the cured product side. Then, when there is a region where the exposure of the semiconductor wafer can be directly confirmed, it is determined that there is a cissing, and when there is no region where the exposure of the semiconductor wafer can be directly confirmed, it is determined that there is no cissing.
  • the wafer for manufacturing a semiconductor chip is cut from the half-cut forming surface toward the back surface, and the embedding property of the first cured resin film (r1) in the groove portion of the half-cut portion is checked with an optical microscope (Keyence's "VHX-1000”. ”) was observed.
  • the evaluation criteria for implantability were as follows. Evaluation S: The shape of the first cured resin film (r1) is not distorted, and the embedding property is the best. Evaluation A: Although the shape of the first cured resin film (r1) is slightly distorted near the entrance of the groove, the embedding property is good. Evaluation B: Implantability is poor.
  • Example 1 As the wafer for manufacturing the semiconductor chip, a 12-inch silicon wafer (wafer thickness 750 ⁇ m) in which the planned division line was half-cut was used. The width of the half-cut portion (width of the groove portion) of the silicon wafer is 60 ⁇ m, and the depth of the groove is 230 ⁇ m.
  • the first support sheet (Y1) BG tape E-8510HR (manufactured by Lintec)
  • the first thermosetting resin film (x1-1a) with a thickness of 45 ⁇ m were attached.
  • the first thermosetting resin film (x1-1a) of the laminated first composite sheet ( ⁇ 1) is attached to a wafer for manufacturing semiconductor chips at a table temperature of 90 ° C., and then heated at 160 ° C. for 1 hour to be cured.
  • the first cured resin film (r1) was used.
  • the back surface of the wafer was ground to make the thickness of the wafer for manufacturing semiconductor chips 200 ⁇ m.
  • a roll-shaped second thermosetting resin film (x2-1) sandwiched between release films and having a thickness of 25 ⁇ m was attached to the back surface of a wafer for manufacturing semiconductor chips at a table temperature of 70 ° C. .. It was heated at 130 ° C.
  • Example 2 The evaluation was carried out in the same manner as in Example 1 except that the first thermosetting resin film (x1-1a) was changed to the first thermosetting resin film (x1-1b).
  • Example 3 The evaluation was carried out in the same manner as in Example 2 except that the second thermosetting resin film (x2-1a) was changed to the second thermosetting resin film (x2-1b).
  • Example 4 The evaluation was carried out in the same manner as in Example 2 except that the second thermosetting resin film (x2-1a) was changed to the second thermosetting resin film (x1-1b).
  • Comparative Examples 1 to 3 the evaluation was carried out in the same manner as in Example 1 except that the second thermosetting resin film (x2-1a) was attached only to the back surface of the wafer for manufacturing semiconductor chips.
  • the first thermosetting resin film (x1-1a) was changed to the first thermosetting resin film (x1-1b), and a 12-inch silicon wafer (wafer) in which the planned division line was not half-cut.
  • the evaluation was carried out in the same manner as in Example 1 except that the first thermosetting resin film (x1-1b) was attached only to the front surface having a thickness of 750 ⁇ m).
  • the second curable resin film (x1-1b) was used instead of the second curable resin film (x2-1a), and the back surface of the wafer for forming the semiconductor chip was not protected.
  • Example 1 the evaluation was carried out in the same manner as in Example 1.
  • the first cured resin film and the second cured resin film of Examples 1 to 4 were evaluated as follows.
  • a first curable resin film having a thickness of 45 ⁇ m is attached to an 8-inch silicon wafer (wafer thickness 730 ⁇ m) at a table temperature of 90 ° C. and heated at 130 ° C. for 4 hours to cure, with a first curable resin film. Wafer was produced.
  • a second curable resin film having a thickness of 25 ⁇ m sandwiched between the release films is attached to the first cured resin film of the wafer with the first cured resin film at a table temperature of 70 ° C. while peeling off the release film on one side. did.
  • PET50 (A) PL Thin 8LK (PET base material having an adhesive layer) manufactured by Lintec Corporation was attached onto the second curable resin film.
  • a notch was made from the PET50 (A) PL thin 8LK side to the second curable resin film with a cutter to form a test piece in the shape of a strip having a width of 25 mm.
  • a universal tensile tester manufactured by Orientec Co., Ltd., model number: Tencilon RTC-1210A
  • JIS Z0237 2009.
  • the end of the test piece was peeled off at the interface between the first cured resin film and the second cured resin film, and the peeling force was measured.
  • the peeling angle was 180 ° and the peeling speed was 300 mm / min.
  • a second curable resin film having a thickness of 25 ⁇ m sandwiched between the release films was attached to an 8-inch silicon wafer (wafer thickness 730 ⁇ m) at a table temperature of 70 ° C. while peeling off the release film on one side.
  • the peeling force of the second curable resin film on the silicon wafer (mirror surface) was measured by the same method.
  • the first cured resin film and the second cured resin film of Examples 1 to 4 were evaluated as follows.
  • a first curable resin film having a thickness of 45 ⁇ m is attached to an 8-inch silicon wafer (wafer thickness 730 ⁇ m) at a table temperature of 90 ° C. and heated at 130 ° C. for 4 hours to cure, with a first curable resin film. Wafer was produced.
  • a roll-shaped second curable resin film having a thickness of 25 ⁇ m sandwiched between the release films was applied to the first cured resin film of the wafer with the first cured resin film, and the table temperature 70 while peeling off the release film on one side. It was affixed at ° C.
  • PET50 A
  • PL Thin 8LK PET base material having an adhesive layer
  • Lintec Corporation was attached onto the second curable resin film.
  • the PET base material having the pressure-sensitive adhesive layer was manually peeled off to evaluate the reworkability of the second curable resin film with respect to the first curable resin film.
  • the evaluation criteria were as follows. -Evaluation A: The entire surface was peeled off at the interface between the first curable resin film and the second curable resin film.
  • -Evaluation B Peeling at the interface between the first curable resin film and the second curable resin film, and peeling at the interface between the second curable resin film and the pressure-sensitive adhesive layer of the PET substrate having the pressure-sensitive adhesive layer.
  • -Evaluation C The entire surface was peeled off at the interface between the second curable resin film and the pressure-sensitive adhesive layer of the PET substrate having the pressure-sensitive adhesive layer.
  • a first curable resin film with a thickness of 45 ⁇ m was attached to an 8-inch silicon wafer (wafer thickness 730 ⁇ m) at a table temperature of 90 ° C.
  • a wafer with a first cured resin film was prepared by heating and curing the mixture for 4 hours.
  • a second curable resin film having a thickness of 25 ⁇ m sandwiched between the release films is attached to the first cured resin film of the wafer with the first cured resin film at a table temperature of 70 ° C. while peeling off the release film on one side. did.
  • the second curable resin film was cured by heating at 130 ° C.
  • Table 1 shows the components contained in the first thermosetting resin film forming composition (x1-1-1) and various evaluation results of the thermosetting resin film.
  • Table 2 shows the results of "evaluation of adhesion with resin film”.
  • Table 3 shows the results of "6. Evaluation of reworkability of the second curable resin film”.
  • FIG. 16 shows the result (drawing substitute photograph) of "3-5. Evaluation of embedding property in the groove”.
  • the protection (coating property) of the semiconductor chip is excellent, and the adhesion between the first curable resin film and the second curable resin film is the first. It can be seen that the adhesion between the cured resin film and the second cured resin film is also good, and peeling at the interface between the first cured resin film and the second cured resin film is unlikely to occur. Therefore, it can be seen that the overall protection (coverability) of the semiconductor chip can be maintained satisfactorily for a long period of time, and the effect of improving the strength of the semiconductor chip can be satisfactorily maintained for a long period of time.
  • Comparative Examples 1 to 3 the protective property (coverability) of the semiconductor chip is inferior, so that the effect of improving the strength of the semiconductor chip is insufficient. Further, from the results shown in Table 3, the second curable resin films used in Examples 1 to 3 have good reworkability, are easy to reattach the second curable resin film, and are excellent in handleability. You can also see that we can provide a kit.

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Abstract

La présente invention aborde le problème de la fourniture d'un kit comprenant un film de résine durcissable qui peut améliorer la résistance d'une puce à semi-conducteur et empêcher simultanément le pelage d'un film protecteur. La solution selon l'invention concerne, en tant que kit pour résoudre le problème, un kit comportant : un premier film de résine durcissable (x1) pour former, sous la forme d'un film protecteur, un premier film de résine durci (r1) à la fois sur une surface de formation de bosse et sur une surface latérale d'une puce à semi-conducteur, la surface de formation de bosse étant pourvue de bosses ; et un second film de résine durcissable (x2) pour former, sous la forme d'un film protecteur, un second film de résine durci (r2) sur une surface opposée à la surface de formation de bosse de la puce à semi-conducteur.
PCT/JP2020/049015 2019-12-27 2020-12-25 Kit et procédé de fabrication de puce à semi-conducteur WO2021132680A1 (fr)

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US20150357256A1 (en) * 2014-06-08 2015-12-10 UTAC Headquarters Pte. Ltd. Semiconductor packages and methods of packaging semiconductor devices
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