WO2021129665A1 - 纳米材料及其制备方法、半导体器件 - Google Patents

纳米材料及其制备方法、半导体器件 Download PDF

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WO2021129665A1
WO2021129665A1 PCT/CN2020/138638 CN2020138638W WO2021129665A1 WO 2021129665 A1 WO2021129665 A1 WO 2021129665A1 CN 2020138638 W CN2020138638 W CN 2020138638W WO 2021129665 A1 WO2021129665 A1 WO 2021129665A1
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carbon atoms
zno
group
surface ligand
nanomaterial
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王劲
杨一行
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Tcl科技集团股份有限公司
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    • C09K11/0805—Chalcogenides
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Definitions

  • This application relates to the field of display technology, in particular to a nano material and a preparation method thereof, and a semiconductor device containing the above nano material.
  • ZnO nanocrystals As a direct band gap semiconductor material, ZnO nanocrystals have a band gap width of 3.3 eV at room temperature, large energy band gap and exciton binding energy, high electron mobility, high visible light transmittance, and excellent water and oxygen stability. Electron transport layer materials based on ZnO nanocrystals have been studied or applied in many electroluminescent devices, such as solar cells, organic light-emitting diodes and quantum dot light-emitting diodes.
  • One of the preparation methods of ZnO nanocrystals is the low-temperature solution synthesis method.
  • the surface of the ZnO nanocrystal synthesized by the low-temperature solution method is prone to defects.
  • the electron mobility is low and the stability is poor, which seriously affects the efficiency and life of the electroluminescent device.
  • researchers modified the surface of nanocrystals with ligands to passivate surface defects to improve the stability and electron mobility of electroluminescent devices.
  • the ligands used to improve the surface defects of ZnO nanocrystals are mainly acetate, hydroxyl, alkyl or alcohol ether, but the resulting ZnO nanocrystals are used as the electron transport layer, and the luminous efficiency and service life of the obtained light-emitting devices are still Can not meet the requirements of the display industry.
  • One of the objectives of the embodiments of the present application is to provide a nano material and a preparation method thereof, and a semiconductor device containing the above nano material, which aims to solve the surface defects of ZnO nanocrystals and electron migration when used as an electron transport layer of a light emitting device
  • the low efficiency leads to the problems of low luminous efficiency and service life of the device.
  • a nanomaterial in a first aspect, includes a ZnO nanocrystal and a surface ligand bound to the ZnO nanocrystal, and the structure of the surface ligand is shown in the following formula 1.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom;
  • R 4 is selected from a carbon atom number of 5-60 The number of carbon atoms in the alkyl group is 1 to 5, the number of carbon atoms in the alkoxy group is 1 to 5, and the number of carbon atoms in the hydroxyalkoxy group is 1 to 5.
  • a method for preparing nanomaterials which includes the following steps:
  • An initial ZnO nanocrystal solution is provided, the solute of the ZnO nanocrystal solution is ZnO nanocrystals containing a first surface ligand; a second surface ligand solution is configured, and the structure of the second surface ligand is shown in the following formula 1.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom;
  • R 4 is selected from a carbon atom number of 5-60 The number of carbon atoms in the alkyl group is 1 to 5, the number of carbon atoms in the alkoxy group is 1 to 5, and the number of carbon atoms in the hydroxyalkoxy group is 1 to 5;
  • the initial ZnO nanocrystal solution and the second surface ligand solution are mixed to cause the first surface ligand on the initial ZnO nanocrystal surface to undergo a displacement reaction with the second surface ligand to prepare a surface bound ZnO nanocrystals of the second surface ligand.
  • a semiconductor device including an anode and a cathode disposed oppositely, and an active layer disposed between the anode and the cathode, and electrons disposed between the active layer and the cathode
  • the transport layer wherein the material of the electron transport layer is a nanomaterial, and the nanomaterial includes ZnO nanocrystals and a surface ligand bound to the ZnO nanocrystal, and the structure of the surface ligand is as follows: As shown,
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom;
  • R 4 is selected from a carbon atom number of 5-60 The number of carbon atoms in the alkyl group is 1 to 5, the number of carbon atoms in the alkoxy group is 1 to 5, and the number of carbon atoms in the hydroxyalkoxy group is 1 to 5.
  • the electron mobility of ZnO nanocrystals can be improved, and the solution stability can be improved.
  • Figure 1 is a process flow chart of the preparation of nanomaterials provided by the embodiments of the present application.
  • FIG. 2 is a schematic structural diagram of a semiconductor device provided by an embodiment of the present application.
  • Alkyl refers to a type of saturated chain hydrocarbon group containing only carbon and hydrogen atoms, with straight and/or branched carbon chains, including but not limited to methyl, ethyl, propyl, iso Propyl, butyl, isobutyl, pentyl, isopentyl, etc.
  • the number of carbon atoms of the alkyl group is 1 to 5. In some specific embodiments, the number of carbon atoms of the alkyl group is 1, 2, 3, 4, and 5.
  • Alkoxy refers to a type of alkyl group directly bonded to an oxygen atom, including but not limited to such as methoxy, ethoxy, propoxy, butoxy, isobutoxy, tert-butoxy Wait.
  • the number of carbon atoms of the alkoxy group is 1 to 5. In some specific embodiments, the number of carbon atoms of the alkoxy group is 1, 2, 3, 4, and 5.
  • Hydroxyalkyloxy refers to a type of alkyl group that is directly bonded to an oxygen atom and has a hydroxyl group attached to at least one carbon atom, such as hydroxymethyloxy, hydroxyethyloxy, hydroxypropyloxy, Hydroxybutyloxy.
  • the number of carbon atoms of the alkyloxycarbonyl group is 1 to 5. In some specific embodiments, the number of carbon atoms of the hydroxyalkyloxy group is 1, 2, 3, 4, and 5.
  • the first aspect of the embodiments of the present application provides a nanomaterial.
  • the nanomaterial includes a ZnO nanocrystal and a surface ligand bound to the ZnO nanocrystal.
  • the structure of the surface ligand is shown in the following formula 1.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom;
  • R 4 is selected from a carbon atom number of 5-60 The number of carbon atoms in the alkyl group is 1 to 5, the number of carbon atoms in the alkoxy group is 1 to 5, and the number of carbon atoms in the hydroxyalkoxy group is 1 to 5.
  • the nanomaterials provided by the embodiments of the present application include ZnO nanocrystals, and the benzoquinone structure surface ligand represented by Formula 1 bound to the ZnO nanocrystal, and the surface ligand contains 5 to 5 carbon atoms.
  • 60 long-chain hydrocarbon group 60 long-chain hydrocarbon group.
  • the long-chain hydrocarbon group with 5-60 carbon atoms can increase the distance between adjacent ZnO nanocrystals, prevent the ZnO nanocrystals from agglomerating, thereby improving their dispersion performance and improving the solution stability of the ZnO nanocrystals.
  • the benzoquinone structure can not only passivate the defect states caused by the dangling bonds and oxygen vacancies on the surface of the ZnO nanocrystals, but the oxygen atoms in the structure have good electron accepting ability and have affinity for the molecular chain and the entire molecule.
  • the molecule a good electron supply and acceptance carrier, thereby improving the carrier transport and injection capacity of ZnO nanocrystals, and can neutralize the charge blocking effect caused by long-chain hydrocarbon groups (the pair of long-chain ligands on the surface of ZnO nanocrystals)
  • the charge transfer between adjacent nanocrystals acts as an insulating barrier and retardation), improving the electron mobility of ZnO nanocrystals.
  • the alkyl chain in the surface ligand molecule has excellent hydrophobicity, after being bound to the surface of the ZnO nanocrystal, it can protect the internal ZnO nanocrystal material from the influence of oxygen and water to a certain extent, and improve the stability of the device. Sex.
  • the nanomaterials provided in the embodiments of the present application and the surface ligands of the ZnO nanocrystals can not only improve the electron mobility of the ZnO nanocrystals, but also improve the stability of the solution.
  • the nanomaterial is composed of ZnO nanocrystals and surface ligands bound to the ZnO nanocrystals.
  • the R 4 is selected from saturated or unsaturated hydrocarbon groups with 5-30 carbon atoms.
  • the surface ligand of the benzoquinone structure has an appropriate chain length, which can not only increase the distance between adjacent ZnO nanocrystals, prevent ZnO nanocrystals from agglomerating, thereby improving their dispersion Performance, improve the solution stability of ZnO nanocrystals; and can reduce the insulation barrier and retardation caused by the introduction of long-chain groups on the charge transfer between adjacent nanocrystals, thereby more significantly improving the electron migration of ZnO nanocrystals rate.
  • the alkyl chain has excellent hydrophobicity. After being bound to the surface of the ZnO nanocrystal, it can protect the internal ZnO nanocrystal material from oxygen and water to a certain extent, and improve the stability of the device.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom.
  • the alkyl group can be represented as -R
  • the alkoxy group can be represented as -OR
  • the hydroxyalkoxy group can be represented as -OROH, where R is an alkyl group.
  • the alkyl chain introduced by R 4 is long and has excellent hydrophobicity. After being bound to the surface of the ZnO nanocrystal, it can protect the internal ZnO nanocrystal material from the influence of oxygen and water to a certain extent, and improve the stability of the device.
  • the alkyl group is selected from linear saturated alkyl groups having 1 to 5 carbon atoms.
  • the internal ZnO nanocrystalline material is protected from oxygen and water to a certain extent. Under the premise of influence, avoid excessively long chain length, which will cause an insulating barrier and retardation to the charge transfer between adjacent nanocrystals.
  • the alkoxy group is selected from linear saturated alkoxy groups having 1 to 4 carbon atoms.
  • the internal ZnO nanocrystalline material is protected from oxygen and water to a certain extent. Under the premise of the influence of, avoid excessively long chain length, which will cause an insulating barrier and retardation to the charge transfer between adjacent nanocrystals.
  • the alkyl group in the hydroxyalkoxy group is selected from linear saturated hydroxyalkoxy groups having 1 to 3 carbon atoms.
  • the internal ZnO nanocrystalline material is protected from oxygen and oxygen to a certain extent. Under the premise of the influence of water, avoid excessively long chain length, which will cause an insulating barrier and retardation to the charge transfer between adjacent nanocrystals.
  • the total number of carbon atoms in R 1 and R 2 is less than 6, and the number of carbon atoms in R 3 is less than 3.
  • the structure of Formula 1 thus obtained has low steric hindrance, and causes the least insulating barrier and retardation to the charge transfer between adjacent nanocrystals.
  • the surface ligand is selected from at least one of the following structures
  • the above-mentioned surface ligands not only have efficient carrier transport and injection capabilities, but also can passivate defects on the surface of ZnO nanocrystals; in addition, the hydrocarbon-based chains in the ligand molecules have excellent hydrophobicity, which can shield water and oxygen. Improve the stability of ZnO nanocrystals and adjacent thin film layers in the device.
  • the molar ratio of the ZnO nanocrystal to the surface ligand bound to the ZnO nanocrystal is 1:5 to 1:100.
  • the molar ratio of the ZnO nanocrystals to the surface ligands bound to the ZnO nanocrystals is within the above range, and the surface ligands can fully bind to the reaction sites on the ZnO nanocrystals, and improve the ZnO nanocrystals. Stability, improve the surface defects on the ZnO nanocrystal, and improve its electron transport.
  • the surface ligand is The combination of the ZnO nanocrystals is not tight enough and easily falls off and affects the electron transport performance of the nanomaterial.
  • the surface ligand pair When the molar content of the surface ligand bound to the ZnO nanocrystal is too low, based on the molar amount of the ZnO nanocrystal as 1, and the molar content of the surface ligand is less than 5, the surface ligand pair The stability of ZnO nanocrystals and the influence of the electron transport layer are limited, and they are not enough to significantly improve the effect.
  • the nanomaterials provided in the examples of this application can be prepared by the following methods.
  • the second aspect of the embodiments of the present application provides a method for preparing nanomaterials, including the following steps:
  • R 1 , R 2 , and R 3 are each independently selected from an alkyl group, an alkoxy group, and a hydroxyl group. At least one of an alkoxy group, a hydroxyl group, and a hydrogen atom; R 4 is selected from a hydrocarbon group having 5 to 60 carbon atoms, and the carbon atom in the alkyl group, the alkoxy group, and the hydroxyalkoxy group The number is 1 ⁇ 5;
  • the preparation method of nanomaterials provided in the examples of this application only needs to mix the initial ZnO nanocrystal solution and the surface ligand solution to make the first surface ligand and the second surface ligand on the surface of the initial ZnO nanocrystal After the displacement reaction occurs, the ZnO nanocrystals with the second surface ligand bound to the surface can be prepared.
  • the method has a simple process, mild conditions, and is easy to realize large-scale production.
  • the nanomaterials prepared by this method can improve the electron mobility and solution stability of ZnO nanocrystals.
  • the preparation of the initial ZnO nanocrystal solution can be prepared by a conventional method, such as a solution method.
  • the solute of the ZnO nanocrystal solution is a ZnO nanocrystal containing a first surface ligand.
  • the first surface ligand is selected from at least one of acetate ligand, hydroxyl ligand, alkyl ligand, and alcohol ether ligand.
  • the first surface ligand is selected from acetate ligand and/or hydroxyl ligand.
  • the ligand replacement rate can be increased in the subsequent ligand replacement reaction with the second surface ligand, and the initial ZnO nanocrystal surface The first surface ligand is fully replaced with the second surface ligand.
  • the second surface ligand solution is configured, and the selection of the second surface ligand is as described above. In order to save space, it will not be repeated here.
  • the R 4 is selected from saturated or unsaturated hydrocarbon groups with 5-30 carbon atoms.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom.
  • the alkyl group is selected from linear saturated alkyl groups having 1 to 5 carbon atoms.
  • the alkoxy group is selected from linear saturated alkoxy groups having 1 to 4 carbon atoms.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom.
  • the alkyl group in the hydroxyalkoxy group is selected from linear saturated hydroxyalkoxy groups having 1 to 3 carbon atoms.
  • at least one of the R 1 , the R 2 and the R 3 is selected from a hydroxyl group or a hydrogen atom.
  • the first surface ligand is selected from at least one of the following structures
  • the above-mentioned first surface ligand not only has efficient carrier transport and injection capabilities, but also can passivate defects on the surface of ZnO nanocrystals; in addition, the hydrocarbon chain in the ligand molecule has excellent hydrophobicity, which can shield water and oxygen. It can improve the stability of ZnO nanocrystals and adjacent thin film layers in the device.
  • step S03 the initial ZnO nanocrystal solution and the second surface ligand solution are mixed to cause the first surface ligand on the surface of the initial ZnO nanocrystal to undergo a displacement reaction with the second surface ligand,
  • the ZnO nanocrystal with the second surface ligand bound on the surface is prepared.
  • the molar ratio of the ZnO nanocrystal to the second surface ligand is 1:5 ⁇ Mix the initial ZnO nanocrystal solution and the first surface ligand solution at a ratio of 1:100.
  • the molar ratio of the initial ZnO nanocrystal to the second surface ligand is within the above range, and the second surface ligand can fully replace the first surface ligand on the initial ZnO nanocrystal to form a second surface ligand.
  • the ZnO nanocrystals combined with two surface ligands can improve the stability of the ZnO nanocrystals, improve the surface defects on the ZnO nanocrystals, and improve its electron transport properties.
  • the second surface ligand is The combination of the ZnO nanocrystals is not tight enough and easily falls off and affects the electron transport performance of the nanomaterial.
  • the second surface ligand When the molar content of the second surface ligand is too low, based on the molar amount of the initial ZnO nanocrystal as 1, and the molar content of the second surface ligand is less than 5, the second surface ligand is insufficient Substituting the first surface ligand on the initial ZnO nanocrystals cannot effectively improve the stability of the ZnO nanocrystals and the electron transport layer.
  • the mixed solution system in the step of mixing the initial ZnO nanocrystal solution and the second surface ligand solution, is reacted for 20 minutes to 40 minutes at a temperature of 50°C to 250°C . If the reaction temperature is too low or the time is too short, it is not enough to fully replace the first surface ligand of the initial ZnO nanocrystal with the second surface ligand; if the reaction temperature is too high or the time is too long, it will easily cause the The decomposition of the two surface ligands affects the properties of the surface ligands bound to the ZnO nanocrystals, thereby changing the original intention of the modification, and even further reducing the stability and electron transport properties of the ZnO nanocrystals.
  • the third aspect of the embodiments of the present application provides a semiconductor device, including an anode and a cathode disposed oppositely, and an active layer disposed between the anode and the cathode.
  • the structure of the surface ligand is shown in the following formula 1.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom;
  • R 4 is selected from a carbon atom number of 5-60 The number of carbon atoms in the alkyl group, the alkoxy group, and the hydroxyalkoxy group is 1 to 5.
  • the semiconductor device provided by the embodiment of the present application uses the above-mentioned nano material as the electron transport layer. Therefore, the obtained semiconductor device not only has better photoelectric efficiency, but also has better stability.
  • the nanomaterial is composed of ZnO nanocrystals and surface ligands bound to the ZnO nanocrystals.
  • the material of the electron transport layer is a nano material, and the surface ligand of the nano material is shown in Formula 1.
  • the R 4 is selected from saturated or unsaturated hydrocarbon groups with 5-30 carbon atoms.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom.
  • the alkyl group is selected from linear saturated alkyl groups having 1 to 5 carbon atoms.
  • the alkoxy group is selected from linear saturated alkoxy groups having 1 to 4 carbon atoms.
  • R 1 , R 2 , and R 3 are each independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, and a hydrogen atom. Species; and the alkyl group in the hydroxyalkoxy group is selected from linear saturated hydroxyalkoxy groups having 1 to 3 carbon atoms.
  • at least one of the R 1 , the R 2 and the R 3 is selected from a hydroxyl group or a hydrogen atom.
  • the surface ligand is selected from at least one of the following structures
  • the above-mentioned surface ligands not only have efficient carrier transport and injection capabilities, but also can passivate defects on the surface of ZnO nanocrystals; in addition, the hydrocarbon-based chains in the ligand molecules have excellent hydrophobicity, which can shield water and oxygen. Improve the stability of ZnO nanocrystals and adjacent thin film layers in the device.
  • the molar ratio of the ZnO nanocrystal to the surface ligand bound to the ZnO nanocrystal is 1:5 to 1:100.
  • the semiconductor includes solar cells (devices absorb light from an active layer, such as perovskite solar cells), light-emitting devices (devices emit light from a top electrode or a bottom electrode, and the active layer is a light-emitting layer).
  • the light-emitting devices include organic light-emitting diodes and quantum dot light-emitting diodes, wherein the quantum dot light-emitting diodes include perovskite light-emitting diodes.
  • the light-emitting devices described in the embodiments of the present application are divided into positive-type structure electroluminescent devices and inverted-type structure electroluminescent devices.
  • the positive structure is a substrate/anode/active layer/electron transport layer/cathode, and optionally arranged between the anode and the quantum dot light-emitting layer such as a hole injection layer, a hole transport layer and an electron blocking layer
  • a hole functional layer such as an electron transport layer, an electron injection layer, a hole blocking layer, etc., optionally provided between the electron transport layer and the cathode.
  • the inverted structure is opposite to the positive structure.
  • the choice of the anode is not strictly limited, and ITO (indium-doped tin oxide) can be selected, but it is not limited thereto.
  • the material of the active layer is conventional quantum dots or organic light-emitting materials.
  • the cathode can be selected from conventional cathode materials, such as metallic copper, metallic silver or metallic aluminum.
  • the material of the hole injection layer can be selected from, for example, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid) (PEDOT:PSS) and derivatives doped with s-MoO 3 (PEDOT :PSS:s-MoO 3 ), but not limited to this.
  • the material of the hole transport layer can be selected from, for example, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl) ) Diphenylamine)] (TFB), poly(9-vinylcarbazole) (PVK), but not limited to this.
  • the material of the electron transport layer may be selected from materials such as ZnO and TiO 2 but is not limited thereto.
  • the light emitting device may further include an encapsulation layer.
  • the encapsulation layer can be provided on the surface of the top electrode (the electrode away from the substrate), or can be provided on the entire surface of the electroluminescent device.
  • An electroluminescent diode device comprising an anode and a cathode arranged oppositely, an active layer arranged between the anode and the cathode, and an electron transport layer arranged between the active layer and the cathode ,
  • the anode is ITO
  • the cathode is made of silver
  • the active layer is CdSe@ZnS
  • the electron transport layer is made of nanomaterials
  • the nanomaterials include ZnO nanocrystals
  • the surface ligand on the ZnO nanocrystal, and the structure of the surface ligand is shown in the following formula 2.
  • An electroluminescent diode device comprising an anode and a cathode arranged oppositely, an active layer arranged between the anode and the cathode, and an electron transport layer arranged between the active layer and the cathode ,
  • the anode is ITO
  • the cathode is made of silver
  • the active layer is CdSe@ZnS
  • the electron transport layer is made of nanomaterials
  • the nanomaterials include ZnO nanocrystals
  • the surface ligand on the ZnO nanocrystal, and the structure of the surface ligand is shown in the following formula 3.
  • An electroluminescent diode device comprising an anode and a cathode arranged oppositely, an active layer arranged between the anode and the cathode, and an electron transport layer arranged between the active layer and the cathode ,
  • the anode is ITO
  • the cathode is made of silver
  • the active layer is CdSe@ZnS
  • the electron transport layer is made of nanomaterials
  • the nanomaterials include ZnO nanocrystals
  • the surface ligand on the ZnO nanocrystal, the structure of the surface ligand is shown in the following formula 4.
  • An electroluminescent diode device comprising an anode and a cathode arranged oppositely, an active layer arranged between the anode and the cathode, and an electron transport layer arranged between the active layer and the cathode ,
  • the anode is ITO
  • the cathode is made of silver
  • the active layer is a CdSe@ZnS quantum dot light-emitting layer
  • the electron transport layer is made of nanomaterials
  • the nanomaterials include ZnO nanomaterials. Crystals, and hydroxyl ligands bound to the ZnO nanocrystals.

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Abstract

一种纳米材料，所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式（I）所示，式（I）中，R1、R2、R3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R4选自碳原子数为5-60的烃基，且所述烷基、烷氧基、所述羟基烷氧基中的碳原子数为1-5。ZnO纳米晶的表面配体既能钝化ZnO纳米晶表面的悬挂键和氧空位等导致的缺陷态，又可以调控ZnO纳米晶的电子迁移率，并提高溶液稳定性。

Description

纳米材料及其制备方法、半导体器件
本申请要求于2019年12月28日提交的中国专利申请No.201911384737.7的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种纳米材料及其制备方法，以及一种含有上述纳米材料的半导体器件。
背景技术
ZnO纳米晶作为一种直接带隙半导体材料，室温下带隙宽度为3.3eV，能带隙和激子束缚能较大，具有较高的电子迁移率、高可见光透过率、优异的水氧稳定性。基于ZnO纳米晶的电子传输层材料已在诸多电致发光器件中进行研究或应用，如太阳能电池、有机发光二极管和量子点发光二极管。
ZnO纳米晶的制备方式之一为低温溶液合成法。但是，低温溶液法合成的ZnO纳米晶，其表面容易产生缺陷，用作电致发光器件的电子传输层时，电子迁移率低和稳定性较差，严重影响电致发光器件效率和寿命。为了解决该问题，研究人员对纳米晶表面进行配体修饰，钝化表面缺陷，以提高电致发光器件稳定性和电子迁移率。目前，用于改善ZnO纳米晶表面缺陷的配体主要为醋酸根、羟基、烷基或醇醚，但由此得到的ZnO纳米晶作为电子传输层，得到的发光器件的发光效率和使用寿命仍然不能满足显示行业要求。
申请内容
本申请实施例的目的之一在于：提供一种纳米材料及其制备方法，以及一种含有上述纳米材料的半导体器件，旨在解决ZnO纳米晶存在表面缺陷，作为发光器件电子传输层时电子迁移率低，导致器件发光效率和使用寿命低的问题。
本申请实施例采用的技术方案是：
第一方面，提供了一种纳米材料，所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式1所示，
Figure PCTCN2020138638-appb-000001
式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，且所述烷基中的碳原子数为1～5，所述烷氧基 中的碳原子数为1～5，所述羟基烷氧基中的碳原子数为1～5。
第二方面，提供了一种纳米材料的制备方法，包括以下步骤：
提供初始ZnO纳米晶溶液，所述ZnO纳米晶溶液的溶质为含有第一表面配体的ZnO纳米晶；配置第二表面配体溶液，所述第二表面配体的结构如下式1所示，式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，且所述烷基中的碳原子数为1～5，所述烷氧基中的碳原子数为1～5，所述羟基烷氧基中的碳原子数为1～5；
Figure PCTCN2020138638-appb-000002
将所述初始ZnO纳米晶溶液和所述第二表面配体溶液混合，使所述初始ZnO纳米晶表面的第一表面配体与所述第二表面配体发生置换反应，制备得到表面结合有第二表面配体的ZnO纳米晶。
第三方面，提供一种半导体器件，包括相对设置的阳极和阴极，以及设置在所述阳极和所述阴极之间的有源层，设置在所述有源层和所述阴极之间的电子传输层，其中，所述电子传输层的材料为纳米材料，且所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式1所示，
Figure PCTCN2020138638-appb-000003
式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，且所述烷基中的碳原子数为1～5，所述烷氧基中的碳原子数为1～5，所述羟基烷氧基中的碳原子数为1～5。
根据本申请的纳米材料，既能提高ZnO纳米晶的电子迁移率，又能提高溶液稳定性。
附图说明
图1是本申请实施例提供的纳米材料的制备制备工艺流程图；
图2是本申请实施例提供的半导体器件的结构示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本 申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
在本申请的描述中，所涉及的化合物及其衍生物均是按照IUPAC(国际纯粹与应用化学联合会)或CAS(化学文摘服务社，位于俄亥俄州哥伦布市)命名系统命名的，具体涉及到的化合物基团作如下阐述与说明：
“烷基”指的是一类仅含有碳、氢两种原子的饱和链状烃基，具有直链碳链和/或支链碳链，包括但不限于甲基、乙基、丙基、异丙基、丁基、异丁基、戊基、异戊基等。所述烷基的碳原子个数为1～5，在一些具体的实施方式中，所述烷基的碳原子个数为1、2、3、4、5。
“烷氧基”指的是一类与氧原子直接键合的烷基，包括但不限于如甲氧基、乙氧基、丙氧基、丁氧基、异丁氧基、叔丁氧基等。所述烷氧基的碳原子个数为1～5，在一些具体的实施方式中，所述烷氧基的碳原子个数为1、2、3、4、5。
“羟基烷基氧”指的是一类与氧原子直接键合的且至少一个碳原子上连接有羟基的烷基，例如羟甲基氧基、羟乙基氧基、羟丙基氧基、羟丁基氧基。所述烷基氧羰基的碳原子个数为1～5，在一些具体的实施方式中，所述羟基烷基氧的碳原子个数为1、2、3、4、5。
为了使本申请要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
本申请实施例第一方面提供一种纳米材料，所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式1所示，
Figure PCTCN2020138638-appb-000004
式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，且所述烷基中的碳原子数为1～5，所述烷氧基中的碳原子数为1～5，所述羟基烷氧基中的碳原子数为1～5。
本申请实施例提供的纳米材料，包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的式1所示的苯醌结构表面配体，且所述表面配体上含有碳原子数为5～60的长链烃基。一方面，碳原子数为5～60的长链烃基可以增加相邻ZnO纳米晶之间的距离，防止ZnO纳米晶团聚，从而提高其分散性能，改善ZnO纳米晶的溶液稳定性。另一方面，苯醌结构，不仅能够钝化ZnO纳米晶表面的悬挂键和氧空位等导致的缺陷态，其结构中氧原子具有良好的电子接受能力，且对分子链和整个分子都具有亲和力，使得分子成为良好的电子供给和接受载体， 进而提高ZnO纳米晶的载流子传输和注入能力，而且可以中和由于长链烃基引起的电荷阻隔作用(ZnO纳米晶表面的长链配体对相邻纳米晶间的电荷传输起着绝缘屏障和阻滞的作用)，提高ZnO纳米晶的电子迁移率。此外，由于所述表面配体分子中的烷基链有优异的疏水性，结合在ZnO纳米晶表面后，可一定程度上保护内部ZnO纳米晶材料免受氧和水的影响，提高器件的稳定性。综上，本申请实施例提供的纳米材料，ZnO纳米晶的表面配体既能提高ZnO纳米晶的电子迁移率，又能提高溶液稳定性。
在一些实施例中，所述纳米材料由ZnO纳米晶以及结合在所述ZnO纳米晶上的表面配体组成。
在一些实施例中，所述R 4选自碳原子数为5～30的饱和或不饱和烃基。当所述R 4的碳原子数为5～30，苯醌结构的表面配体具有合适的链长，不仅可以增加相邻ZnO纳米晶之间的距离，防止ZnO纳米晶团聚，从而提高其分散性能，改善ZnO纳米晶的溶液稳定性；而且可以降低由于长链基团的引入对相邻纳米晶间的电荷传输造成的绝缘屏障和阻滞作用，从而更显著的提高ZnO纳米晶的电子迁移率。此外，烷基链有优异的疏水性，结合在ZnO纳米晶表面后，可一定程度上保护内部ZnO纳米晶材料免受氧和水的影响，提高器件的稳定性。
本申请实施例中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种。其中，所述烷基可表示为-R，所述烷氧基可表示为-OR，所述羟基烷氧基可表示为-OROH，其中的R为烷基。R 4引入的烷基链长较长，具有优异的疏水性，结合在ZnO纳米晶表面后，可一定程度上保护内部ZnO纳米晶材料免受氧和水的影响，提高器件的稳定性。
在一些实施例中，所述烷基选自碳原子数为1～5的直链饱和烷基。此时，当R 1、R 2、R 3中的至少一种选自碳原子数为1～5的直链饱和烷基时，在一定程度上保护内部ZnO纳米晶材料免受氧和水的影响的前提下，避免过长的链长，对相邻纳米晶间的电荷传输造成绝缘屏障和阻滞作用。
在一些实施例中，所述烷氧基选自碳原子数为1～4的直链饱和烷氧基。此时，当R 1、R 2、R 3中的至少一种选自碳原子数为1～4的直链饱和烷氧基时，在一定程度上保护内部ZnO纳米晶材料免受氧和水的影响的前提下，避免过长的链长，对相邻纳米晶间的电荷传输造成绝缘屏障和阻滞作用。
在一些实施例中，所述羟基烷氧基中的烷基选自碳原子数为1～3的直链饱和羟基烷氧基。此时，当R 1、R 2、R 3中的至少一种选自碳原子数为1～3的直链饱和羟基烷氧基时，在一定程度上保护内部ZnO纳米晶材料免受氧和水的影响的前提下，避免过长的链长，对相邻纳米晶间的电荷传输造成绝缘屏障和阻滞作用。
在一些实施例中，所述R 1和所述R 2中的碳原子总数小于6，所述R 3中碳原子数小于3。由此得到的式1结构，空间位阻较小，且对相邻纳米晶间的电荷传输造成绝缘屏障和阻滞作用最小。
在一些实施例中，所述表面配体选自下述结构中的至少一种
Figure PCTCN2020138638-appb-000005
Figure PCTCN2020138638-appb-000006
上述表面配体不仅具有高效的载流子传输和注入能力，同时能钝化ZnO纳米晶表面的缺陷；此外，配体分子中的烃基链有优异的疏水性，对水氧起到屏蔽作用，提高ZnO纳米晶和器件中相邻薄膜层的稳定性。
在一些实施例中，所述纳米材料中，所述ZnO纳米晶与结合在所述ZnO纳米晶上的表面配体的摩尔比为1:5～1:100。所述ZnO纳米晶与结合在所述ZnO纳米晶上的表面配体的摩尔比在上述范围内，所述表面配体可以充分与ZnO纳米晶上的反应位点结合，提高ZnO纳米晶上的稳定性，改善ZnO纳米晶上的表面缺陷，提高其电子传输性。当结合在所述ZnO 纳米晶上的表面配体的摩尔含量过高，以所述ZnO纳米晶的摩尔量为1计，所述表面配体的摩尔含量超过100时，所述表面配体在所述ZnO纳米晶的结合不够紧密，容易脱落影响纳米材料的电子传输性能。当结合在所述ZnO纳米晶上的表面配体的摩尔含量过低，以所述ZnO纳米晶的摩尔量为1计，所述表面配体的摩尔含量不足5时，所述表面配体对ZnO纳米晶稳定性和电子传输层的影响有限，不足以起到明显的改善作用。
本申请实施例提供的纳米材料，可以通过下述方法制备获得。
本申请实施例第二方面提供一种纳米材料的制备方法，包括以下步骤：
S01.提供初始ZnO纳米晶溶液，所述ZnO纳米晶溶液的溶质为含有第一表面配体的ZnO纳米晶；
S02.配置第二表面配体溶液，所述第二表面配体的结构如下式1所示，式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，且所述烷基、所述烷氧基、所述羟基烷氧基中的碳原子数为1～5；
Figure PCTCN2020138638-appb-000007
S03.将所述初始ZnO纳米晶溶液和所述第一表面配体溶液混合，使所述初始ZnO纳米晶表面的第一表面配体与所述第二表面配体发生置换反应，制备得到表面结合有第二表面配体的ZnO纳米晶。
本申请实施例提供的纳米材料的制备方法，只需将初始ZnO纳米晶溶液和表面配体溶液进行混合，使所述初始ZnO纳米晶表面的第一表面配体与所述第二表面配体发生置换反应，即可制备得到表面结合有第二表面配体的ZnO纳米晶。该方法流程简单，条件温和，且易于实现规模化生产。最重要的是，通过该方法制备的纳米材料能够提高ZnO纳米晶的电子迁移率和溶液稳定性。
具体的，上述步骤S01中，初始ZnO纳米晶溶液的制备，可以采用常规方法，如溶液法制备。所述ZnO纳米晶溶液的溶质为含有第一表面配体的ZnO纳米晶。在一些实施例中，所述第一表面配体选自醋酸根配体、羟基配体、烷基配体、醇醚配体中的至少一种。在一些实施例中，所述第一表面配体选自醋酸根配体和/或羟基配体。通过选择含有醋酸根配体和/或羟基配体的初始ZnO纳米晶，可以在后续与第二表面配体之间的配体置换反应中，提高配体置换速率，并使初始ZnO纳米晶表面的第一表面配体充分置换为第二表面配体。
上述步骤S02中，配置第二表面配体溶液，所述第二表面配体的选择如上文所述，为了节约篇幅，此处不再赘述。在一些实施例中，式1所示第二有机配体中，所述R 4选自碳 原子数为5～30的饱和或不饱和烃基。本申请实施例中，式1所示第一有机配体中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种。在一些实施例中，所述烷基选自碳原子数为1～5的直链饱和烷基。在一些实施例中，所述烷氧基选自碳原子数为1～4的直链饱和烷氧基。在一些实施例中，式1所示第一有机配体中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；且所述羟基烷氧基中的烷基选自碳原子数为1～3的直链饱和羟基烷氧基。在一些实施例中，式1所示第一有机配体中，所述R 1、所述R 2和所述R 3中的至少一个选自羟基或氢原子。
在一些实施例中，式1所示第一有机配体中，所述第一表面配体选自下述结构中的至少一种
Figure PCTCN2020138638-appb-000008
Figure PCTCN2020138638-appb-000009
上述第一表面配体不仅具有高效的载流子传输和注入能力，同时能钝化ZnO纳米晶表面的缺陷；此外，配体分子中的烃基链有优异的疏水性，对水氧起到屏蔽作用，提高ZnO纳米晶和器件中相邻薄膜层的稳定性。
上述步骤S03中，将所述初始ZnO纳米晶溶液和所述第二表面配体溶液混合，使所述初始ZnO纳米晶表面的第一表面配体与所述第二表面配体发生置换反应，制备得到表面结合有第二表面配体的ZnO纳米晶。
在一些实施例中，将所述初始ZnO纳米晶溶液和所述第二表面配体溶液混合的步骤 中，按照所述ZnO纳米晶与所述第二表面配体的摩尔比为1:5～1:100的比例，将所述初始ZnO纳米晶溶液和所述第一表面配体溶液混合。所述初始ZnO纳米晶与所述第二表面配体的摩尔比在上述范围内，所述第二表面配体可以将所述初始ZnO纳米晶上的第一表面配体充分置换下来，形成第二表面配体结合的ZnO纳米晶，从而提高ZnO纳米晶的稳定性，改善ZnO纳米晶上的表面缺陷，提高其电子传输性。当所述第二表面配体的摩尔含量过高，以所述初始ZnO纳米晶的摩尔量为1计，所述第二表面配体的摩尔含量超过100时，所述第二表面配体在所述ZnO纳米晶的结合不够紧密，容易脱落影响纳米材料的电子传输性能。当所述第二表面配体的摩尔含量过低，以所述初始ZnO纳米晶的摩尔量为1计，所述第二表面配体的摩尔含量不足5时，所述第二表面配体不足以将所述初始ZnO纳米晶上的第一表面配体置换下来，不能有效提高ZnO纳米晶的稳定性和电子传输层。
在一些实施例中，将所述初始ZnO纳米晶溶液和所述第二表面配体溶液混合的步骤中，将混合得到的溶液体系在温度为50℃～250℃的条件下，反应20min～40min。若反应温度过低或时间过短，不足以将所述初始ZnO纳米晶的第一表面配体充分置换成第二表面配体；若所述反应温度过高或时间过长，则容易造成第二表面配体的分解，影响结合在ZnO纳米晶的表面配体的属性，进而改变其改性的初衷，甚至进一步降低ZnO纳米晶的稳定性和电子传输性。
如图2所示，本申请实施例第三方面提供一种半导体器件，包括相对设置的阳极和阴极，以及设置在所述阳极和所述阴极之间的有源层，设置在所述有源层和所述阴极之间的电子传输层，其中，所述电子传输层的材料为纳米材料，且所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式1所示，
Figure PCTCN2020138638-appb-000010
式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，且所述烷基、所述烷氧基、所述羟基烷氧基中的碳原子数为1～5。
本申请实施例提供的半导体器件，以上述纳米材料作为电子传输层。因此，得到的半导体器件不仅具有较好的光电效率，而且具有较好的稳定性。
在一些实施例中，所述纳米材料由ZnO纳米晶以及结合在所述ZnO纳米晶上的表面配体组成。
所述电子传输层的材料为纳米材料，所述纳米材料的表面配体如式1所示。在一些实施例中，式1所示第二有机配体中，所述R 4选自碳原子数为5～30的饱和或不饱和烃基。 本申请实施例中，式1所示第一有机配体中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种。在一些实施例中，所述烷基选自碳原子数为1～5的直链饱和烷基。在一些实施例中，所述烷氧基选自碳原子数为1～4的直链饱和烷氧基。在一些实施例中，式1所示第一有机配体中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；且所述羟基烷氧基中的烷基选自碳原子数为1～3的直链饱和羟基烷氧基。在一些实施例中，式1所示第一有机配体中，所述R 1、所述R 2和所述R 3中的至少一个选自羟基或氢原子。在一些实施例中，所述表面配体选自下述结构中的至少一种
Figure PCTCN2020138638-appb-000011
Figure PCTCN2020138638-appb-000012
上述表面配体不仅具有高效的载流子传输和注入能力，同时能钝化ZnO纳米晶表面的缺陷；此外，配体分子中的烃基链有优异的疏水性，对水氧起到屏蔽作用，提高ZnO纳米晶和器件中相邻薄膜层的稳定性。
在一些实施例中，所述纳米材料中，所述ZnO纳米晶与结合在所述ZnO纳米晶上的表面配体的摩尔比为1:5～1:100。
具体的，所述半导体包括太阳能电池(器件从有源层吸光，如钙钛矿太阳能电池)、发光器件(器件从顶电极或底电极出光，有源层为发光层)。具体的，所述发光器件包括 有机发光二极管以及量子点发光二极管，其中的量子点发光二极管包括钙钛矿发光二极管。
本申请实施例所述发光器件分为正型结构电致发光器件和反型结构电致发光器件。其中，正型结构为衬底/阳极/有源层/电子传输层/阴极，以及任选地设置在阳极与量子点发光层之间的诸如空穴注入层、空穴传输层和电子阻挡层等的空穴功能层，任选地设置在电子传输层与阴极之间的电子传输层、电子注入层、空穴阻挡层，等等。反型结构与正型结构相反。
具体的，所述阳极的选择没有严格的限定，可以选择ITO(铟掺杂的氧化锡)，但不限于此。
所述有源层的材料为常规的量子点或有机发光材料。
所述阴极的选择可以采用常规的阴极材料，例如金属铜、金属银或者金属铝。
所述空穴注入层的材料可选自如聚(3,4-亚乙二氧基噻吩)-聚(苯乙烯磺酸)(PEDOT:PSS)及其掺有s-MoO 3的衍生物(PEDOT:PSS:s-MoO 3)中的一种，但不限于此。
所述空穴传输层的材料可选自如聚[(9,9-二辛基芴基-2,7-二基)-co-(4,4'-(N-(对丁基苯基))二苯胺)](TFB)、聚(9-乙烯基咔唑)(PVK)的材料，但不限于此。
所述电子传输层的材料可选自如ZnO、TiO 2的材料，但不限于此。
在一些实施例中，所述发光器件还可以包括封装层。所述封装层可以设置在顶电极(远离衬底的电极)表面，也可以设置在整个电致发光器件表面。
下面结合具体实施例和对比例进行说明。
实施例1
一种电致发光二极管器件，包括相对设置的阳极和阴极，以及设置在所述阳极和所述阴极之间的有源层，设置在所述有源层和所述阴极之间的电子传输层，其中，所述阳极为ITO，所述阴极的材料为银，所述有源层为CdSe@ZnS，所述电子传输层的材料为纳米材料，且所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式2所示，
Figure PCTCN2020138638-appb-000013
实施例2
一种电致发光二极管器件，包括相对设置的阳极和阴极，以及设置在所述阳极和所述阴极之间的有源层，设置在所述有源层和所述阴极之间的电子传输层，其中，所述阳极为 ITO，所述阴极的材料为银，所述有源层为CdSe@ZnS，所述电子传输层的材料为纳米材料，且所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式3所示，
Figure PCTCN2020138638-appb-000014
实施例3
一种电致发光二极管器件，包括相对设置的阳极和阴极，以及设置在所述阳极和所述阴极之间的有源层，设置在所述有源层和所述阴极之间的电子传输层，其中，所述阳极为ITO，所述阴极的材料为银，所述有源层为CdSe@ZnS，所述电子传输层的材料为纳米材料，且所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式4所示，
Figure PCTCN2020138638-appb-000015
对比例1
一种电致发光二极管器件，包括相对设置的阳极和阴极，以及设置在所述阳极和所述阴极之间的有源层，设置在所述有源层和所述阴极之间的电子传输层，其中，所述阳极为ITO，所述阴极的材料为银，所述有源层为CdSe@ZnS量子点发光层，所述电子传输层的材料为纳米材料，且所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的羟基配体。
对实施例1-3和对比例1提供的电致发光二极管器件进行效率测试并监测器件稳定性：以上器件制备后均在相同条件下进行封装，隔绝外界环境对器件的影响，监测器件封装后第1-90天的外量子效率EQE的变化。外量子效率(EQE)：采用EQE光学测试仪器测定。
测试结果如下表1所示：
表1
Figure PCTCN2020138638-appb-000016
从上表1可见，本申请实施例1-3提供的电致发光二极管器件，其外量子效率较对比例1提升明显，且90天内器件效率稳定性均保持在90％以上(第90天EQE与第1天EQE比值的百分数)，说明本申请中的所选配体能通过提高ZnO纳米晶电子迁移率和稳定性以改善电致发光器件的发光效率和器件稳定性。
以上仅为本申请的可选实施例而已，并不用于限制本申请。对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (22)

  1. 一种纳米材料，其特征在于，所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式1所示，
    Figure PCTCN2020138638-appb-100001
    式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，所述烷基中的碳原子数为1～5，所述烷氧基中的碳原子数为1～5，所述羟基烷氧基中的碳原子数为1～5。
  2. 如权利要求1所述的纳米材料，其特征在于，所述纳米材料由ZnO纳米晶以及结合在所述ZnO纳米晶上的表面配体组成。
  3. 如权利要求1或2所述的纳米材料，其特征在于，所述R 4选自碳原子数为5-30的饱和或不饱和烃基。
  4. 如权利要求1或2所述的纳米材料，其特征在于，所述烷基选自碳原子数为1-5的直链饱和烷基；或，
    所述烷氧基选自碳原子数为1～4的直链饱和烷氧基；或
    所述羟基烷氧基中的烷基选自碳原子数为1～3的直链饱和羟基烷氧基。
  5. 如权利要求1或2所述的纳米材料，其特征在于，所述R 1和所述R 2中的碳原子总数小于6，所述R 3中碳原子数小于3。
  6. 如权利要求1或2所述的纳米材料，其特征在于，所述表面配体选自下述结构中的至少一种
    Figure PCTCN2020138638-appb-100002
    Figure PCTCN2020138638-appb-100003
  7. 如权利要求1或2所述的纳米材料，其特征在于，所述纳米材料中，所述ZnO纳米晶与结合在所述ZnO纳米晶上的表面配体的摩尔比为1:5～1:100。
  8. 一种纳米材料的制备方法，其特征在于，包括以下步骤：
    提供初始ZnO纳米晶溶液，所述ZnO纳米晶溶液的溶质为含有第一表面配体的ZnO纳米晶；配置第二表面配体溶液，所述第二表面配体的结构如下式1所示，式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，所述烷基中的碳原子数为1～5，所述烷氧基中的碳原子数为1～5， 所述羟基烷氧基中的碳原子数为1～5；
    Figure PCTCN2020138638-appb-100004
    将所述初始ZnO纳米晶溶液和所述第二表面配体溶液混合，使所述初始ZnO纳米晶表面的第一表面配体与所述第二表面配体发生置换反应，制备得到表面结合有第二表面配体的ZnO纳米晶。
  9. 如权利要求8所述的纳米材料的制备方法，其特征在于，所述R 4选自碳原子数为5-30的饱和或不饱和烃基；或
    所述烷基选自碳原子数为1～5的直链饱和烷基；或，
    所述烷氧基选自碳原子数为1～4的直链饱和烷氧基；或
    所述羟基烷氧基中的烷基选自碳原子数为1～3的直链饱和羟基烷氧基。
  10. 如权利要求9所述的纳米材料的制备方法，其特征在于，所述R 1和所述R 2中的碳原子总数小于6，所述R 3中碳原子数小于3。
  11. 如权利要求9所述的纳米材料的制备方法，其特征在于，所述第二表面配体选自下述结构中的至少一种
    Figure PCTCN2020138638-appb-100005
    Figure PCTCN2020138638-appb-100006
  12. 如权利要求8至11任一项所述的纳米材料的制备方法，其特征在于，将所述初始ZnO纳米晶溶液和所述第二表面配体溶液混合的步骤中，按照所述ZnO纳米晶与所述第二表面配体的摩尔比为1:5～1:100的比例，将所述初始ZnO纳米晶溶液和所述第一表面配体溶液混合。
  13. 如权利要求8至11任一项所述的纳米材料的制备方法，其特征在于，所述第一表面配体选自醋酸根配体、羟基配体、烷基配体、醇醚配体中的至少一种。
  14. 如权利要求13所述的纳米材料的制备方法，其特征在于，所述第一表面配体选自 醋酸根配体和/或羟基配体。
  15. 如权利要求8至11、14任一项所述的纳米材料的制备方法，其特征在于，将所述初始ZnO纳米晶溶液和所述第二表面配体溶液混合的步骤中，将混合得到的溶液体系在温度为50℃～250℃的条件下，反应20min～40min。
  16. 一种半导体器件，其特征在于，包括相对设置的阳极和阴极，以及设置在所述阳极和所述阴极之间的有源层，设置在所述有源层和所述阴极之间的电子传输层，其中，所述电子传输层的材料为纳米材料，且所述纳米材料包括ZnO纳米晶，以及结合在所述ZnO纳米晶上的表面配体，所述表面配体的结构如下式1所示，
    Figure PCTCN2020138638-appb-100007
    式1中，R 1、R 2、R 3各自独立地选自烷基、烷氧基、羟基烷氧基、羟基、氢原子中的至少一种；R 4选自碳原子数为5～60的烃基，且所述烷基中的碳原子数为1～5，所述烷氧基中的碳原子数为1～5，所述羟基烷氧基中的碳原子数为1～5。
  17. 如权利要求16所述的半导体器件，其特征在于，所述纳米材料由ZnO纳米晶以及结合在所述ZnO纳米晶上的表面配体组成。
  18. 如权利要求16或17所述的半导体器件，其特征在于，所述R 4选自碳原子数为5～30的饱和或不饱和烃基。
  19. 如权利要求16或17所述的半导体器件，其特征在于，所述烷基选自碳原子数为1～5的直链饱和烷基；或，
    所述烷氧基选自碳原子数为1～4的直链饱和烷氧基；或
    所述羟基烷氧基中的烷基选自碳原子数为1～3的直链饱和羟基烷氧基。
  20. 如权利要求16或17所述的半导体器件，其特征在于，所述R 1和所述R 2中的碳原子总数小于6，所述R 3中碳原子数小于3。
  21. 如权利要求16或17所述的半导体器件，其特征在于，所述表面配体选自下述结构中的至少一种
    Figure PCTCN2020138638-appb-100008
    Figure PCTCN2020138638-appb-100009
  22. 如权利要求16或17所述的半导体器件，其特征在于，所述纳米材料中，所述ZnO纳米晶与结合在所述ZnO纳米晶上的表面配体的摩尔比为1:5～1:100。
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