WO2021129450A1 - 基于化学气相沉积的均匀材料层制备方法 - Google Patents

基于化学气相沉积的均匀材料层制备方法 Download PDF

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WO2021129450A1
WO2021129450A1 PCT/CN2020/136338 CN2020136338W WO2021129450A1 WO 2021129450 A1 WO2021129450 A1 WO 2021129450A1 CN 2020136338 W CN2020136338 W CN 2020136338W WO 2021129450 A1 WO2021129450 A1 WO 2021129450A1
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gas
precursor
substrate
material layer
reaction chamber
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PCT/CN2020/136338
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English (en)
French (fr)
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陈显平
张枫
王泽平
郑凯
喻佳兵
陶璐琪
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重庆大学
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the invention relates to the field of material preparation, in particular to a method for preparing a uniform material layer based on chemical vapor deposition.
  • the existing chemical vapor deposition (Chemical Vapor Deposition; CVD) growth method turns the substrate upside down on a quartz boat, and the growth surface of the substrate is set toward the quartz boat for material growth, and the grown material layer appears on the substrate from the center of the substrate.
  • CVD chemical Vapor Deposition
  • the present invention aims to solve at least one of the technical problems existing in the prior art.
  • the present invention proposes a method for preparing a uniform material layer based on chemical vapor deposition, including: placing a substrate and a stage in a reaction chamber, the substrate is set on the stage, and the growth surface of the substrate Deviating from the stage; providing a first gas-phase source material and a second gas-phase source material into the reaction chamber to form a material layer on the growth surface.
  • a substrate and a stage are placed in a reaction chamber, the growth surface of the substrate is away from the stage, and then a first gas-phase source material is provided into the reaction chamber A chemical vapor deposition reaction is carried out with the second vapor source material to form a material layer on the growth surface of the substrate.
  • the method for preparing a uniform material layer based on chemical vapor deposition in the above technical solution provided by the present invention may also have the following additional technical features:
  • placing the substrate and the stage in the reaction chamber, the substrate is arranged on the stage, and the growth surface of the substrate facing away from the stage includes: placing the first quartz boat on the stage In the reaction chamber; the heat-resistant sheet is covered on the first quartz boat; the substrate is placed on the heat-resistant sheet, and the growth surface of the substrate is away from the heat-resistant sheet.
  • the specific steps of placing the stage and the substrate in the reaction chamber are further disclosed. Specifically, the first quartz boat is placed in the reaction chamber, and then the first quartz boat is covered with a heat-resistant sheet, the first quartz boat and the heat-resistant sheet serve as a stage, and finally the substrate is placed on the heat-resistant sheet, wherein The growth surface of the substrate is away from the heat-resistant sheet.
  • the first quartz boat and the heat-resistant sheet are used as the stage.
  • the stage On the one hand, it can withstand the higher temperature in the reaction chamber, and the stage has stable chemical properties, which can prevent the stage from affecting the first gas-phase source material.
  • Chemical vapor deposition reaction with the second vapor source material on the other hand, it is convenient to obtain materials, combine and place the stage. Cover the heat-resistant sheet on the first quartz boat to prevent the exposed tank of the first quartz boat from affecting the airflow distribution around the substrate, to ensure uniform airflow distribution on the substrate growth surface, and to further improve the quality and uniformity of the material layer Sex.
  • the heat-resistant sheet is a quartz sheet.
  • the quartz sheet has the chemical characteristics of high temperature resistance and low thermal expansion coefficient.
  • the quartz sheet can play a stable lifting effect on the substrate. Ensure that a uniform and high-quality material layer can be formed on the growth surface of the substrate.
  • providing the first gas-phase source material and the second gas-phase source material into the reaction chamber includes: placing the first precursor and the second precursor in the reaction chamber; and placing the first precursor and the second precursor in the reaction chamber; A precursor is heated to a first preset temperature to generate a first gas-phase source material; the second precursor is heated to a second preset temperature through the reaction chamber to generate a second gas-phase source material; and a carrier gas is introduced into the reaction chamber.
  • the specific steps of providing the first gas-phase source material and the second gas-phase source material into the reaction chamber are further provided.
  • the first precursor and the second precursor are placed in the reaction chamber, the first precursor is heated to a first preset temperature to produce a first gaseous source material, and the second precursor is heated to the second The temperature is preset to generate the first gas-phase source material.
  • the first gas-phase source material and the second gas-phase source material can be guided to the top of the substrate growth layer by the introduced carrier gas. Further, the first gas-phase source material and the first gas-phase source material can be guided to the top of the substrate growth layer.
  • the two-phase source material undergoes a vapor deposition reaction to form a uniform and high-quality material layer on the growth layer of the substrate.
  • the first precursor and the second precursor are placed in the reaction chamber and heated to produce the first gas-phase source material and the second gas-phase source material.
  • the first gas-phase source material and the second gas-phase source material are directly in the reaction chamber.
  • the internal output facilitates the vapor deposition reaction between the first vapor source material and the second vapor source material; on the other hand, it can make full use of the waste heat temperature of the first vapor source material and the second vapor source material for vapor deposition reaction, and improve the heat utilization rate. , Can improve the formation efficiency of the material layer.
  • the introduction of the carrier gas plays a role of guiding the first gas-phase source material and the second gas-phase source material on the one hand; on the other hand, it protects the chemical vapor deposition reaction of the first gas-phase source material and the second gas-phase source material. The effect can improve the quality of the material layer.
  • the first preset temperature is a temperature at which the first precursor can be sublimated and gasified
  • the second preset temperature is a temperature at which the second precursor can be sublimated and gasified.
  • placing the first precursor and the second precursor in the reaction chamber includes: arranging the second quartz boat in the reaction chamber; arranging the first precursor in the second quartz boat The second precursor is placed on the stage; where the second precursor is located between the substrate and the first precursor, and the carrier gas passes through the reaction chamber near the end of the second quartz boat.
  • a step of placing the first precursor and the second precursor in the reaction chamber is further provided.
  • the first precursor is carried by the second quartz boat, and the second precursor is carried by the carrier stage, and the second precursor is located between the first precursor and the substrate.
  • the setting positions of the first precursor and the second precursor and the way of introducing the carrier gas are clarified.
  • the carrier gas passes through the first precursor and the second precursor in sequence after passing through the reaction chamber to reach the substrate, which is convenient for transferring the first precursor to the substrate.
  • the gas-phase source material and the second gas-phase source material are guided to the top of the substrate growth layer, which can improve the quality of the substrate material layer.
  • the reaction chamber is a tube furnace, the tube furnace includes a first heating zone and a second heating zone, and providing the first gas-phase source material and the second gas-phase source material to the upper part of the reaction chamber includes :
  • Carrier gas is introduced through the tube furnace at one end close to the first heating zone.
  • the selection of the type of reaction chamber is further provided.
  • the tube furnace is equipped with a first heating zone and a second heating zone, which can heat the first precursor and the second precursor respectively , It is more convenient to use.
  • the carrier gas is hydrogen and/or argon.
  • the type of carrier gas is further provided.
  • the type of carrier gas is further provided.
  • the type of carrier gas plays a role in guiding the first gas phase source material and the second gas phase source material; on the other hand, it plays a role in guiding the first gas phase source material and the second gas phase source material; on the other hand, it plays a role in guiding the first gas phase source material and the second gas phase source material.
  • the chemical vapor deposition reaction between the source material and the second gas phase source material plays a protective role and can improve the quality of the material layer.
  • forming the material layer on the growth surface includes: adjusting the temperature of the position where the substrate is located to a third preset temperature through the reaction chamber for the first preset time, so that the first gas phase The source material and the second gas-phase source material undergo a vapor deposition reaction to form a material layer on the growth surface.
  • the specific steps of forming a material layer on the growth surface are further provided.
  • the temperature By adjusting the temperature to a third preset temperature and continuing for the first preset time, it is ensured that the first gas phase source material and the second gas phase source
  • the smooth progress of the vapor deposition reaction of the substance ensures that a uniform and high-quality material layer can be formed on the growth surface.
  • the third preset temperature may be selected based on the types of the first precursor and the second precursor or the material layer, and the third preset temperature is located in favor of or can promote the gas phase of the first gas source material and the second gas source material. The temperature of the deposition reaction.
  • the first preset time is 3 minutes to 20 minutes.
  • the second precursor is a metal oxide
  • the first precursor is at least one of sulfur powder, selenium powder, and tellurium powder
  • the second preset temperature is 600°C to 850°C between.
  • the composition of the first precursor and the second precursor is further provided, wherein the metal oxide can be titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide , Molybdenum oxide, tungsten oxide, iron oxide, and platinum oxide; further, the second precursor can also be a mixture of an auxiliary agent and a metal oxide, for example, the auxiliary agent can be sodium chloride or potassium iodide; Further, the second precursor can also be a variety of metal oxides or a mixture of metal oxides and metal powders, such as a mixture of molybdenum oxide and niobium oxide, a mixture of molybdenum oxide and rhenium powder, molybdenum oxide and tungsten oxide Mixtures of substances, mixtures of tungsten oxide and niobium oxide, etc.
  • the metal oxide can be titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide , Mo
  • Fig. 1 shows a schematic flow chart of a method for preparing a uniform material layer based on chemical vapor deposition according to the first embodiment of the present invention
  • FIG. 2 shows a schematic flow chart of a method for preparing a uniform material layer based on chemical vapor deposition according to the second embodiment of the present invention
  • FIG. 3 shows a schematic flow chart of a method for preparing a uniform material layer based on chemical vapor deposition according to a third embodiment of the present invention
  • FIG. 4 shows a schematic flowchart of a method for preparing a uniform material layer based on chemical vapor deposition according to a fourth embodiment of the present invention
  • FIG. 5 shows a schematic flow chart of a method for preparing a uniform material layer based on chemical vapor deposition according to the fifth embodiment of the present invention
  • FIG. 6 shows a schematic flow chart of a method for preparing a uniform material layer based on chemical vapor deposition according to a specific embodiment of the present invention
  • Figure 7 shows a schematic structural diagram of a material layer prepared by a tube furnace according to an embodiment of the present invention
  • Fig. 8 shows a schematic diagram of airflow distribution on a growth surface of a substrate according to an embodiment of the present invention
  • FIG. 9 shows a schematic diagram of the gas flow distribution on the growth surface of the substrate in the prior art.
  • an embodiment of the present invention provides a method for preparing a uniform material layer based on chemical vapor deposition, including:
  • Step 102 Place the substrate and the stage in the reaction chamber, the substrate is set on the stage, and the growth surface of the substrate is away from the stage;
  • Step 104 Provide the first gas-phase source material and the second gas-phase source material into the reaction chamber to form a material layer on the growth surface.
  • a substrate and a stage are placed in a reaction chamber, the growth surface of the substrate is away from the stage, and then a first gas-phase source material is provided into the reaction chamber A chemical vapor deposition reaction is carried out with the second vapor source material to form a material layer on the growth surface of the substrate.
  • an embodiment of the present invention provides a method for preparing a uniform material layer based on chemical vapor deposition, including:
  • Step 202 Place the first quartz boat in the reaction chamber
  • Step 204 Cover the quartz plate on the first quartz boat
  • Step 206 Place the substrate on the quartz plate, and the growth surface of the substrate is away from the quartz plate;
  • Step 208 Provide the first gas-phase source material and the second gas-phase source material into the reaction chamber to form a material layer on the growth surface.
  • the specific steps of placing the stage and the substrate in the reaction chamber are further disclosed. Specifically, the first quartz boat is placed in the reaction chamber, and then the quartz plate is covered on the first quartz boat. The first quartz boat and the quartz plate are used as the stage, and finally the substrate is placed on the quartz plate. The growth surface is away from the heat-resistant sheet.
  • the first quartz boat and the quartz plate are used as the stage, which can withstand the higher temperature of the reaction chamber, and the stage has stable chemical properties, which can prevent the stage from changing chemical properties at higher temperatures. Affect the chemical vapor deposition reaction between the first gas phase source material and the second gas phase source material, and at the same time facilitate the selection, assembly and placement of the stage; cover the quartz plate on the first quartz boat to prevent the first quartz boat from being exposed
  • the groove body affects the airflow distribution around the substrate, ensures uniform airflow distribution on the growth surface of the substrate, and further improves the quality and uniformity of the material layer.
  • the quartz plate has the chemical characteristics of high temperature resistance and low thermal expansion coefficient.
  • the quartz plate can stably lift the substrate and ensure that it can be formed on the growth surface of the substrate. Uniform, high-quality material layer.
  • an embodiment of the present invention provides a method for preparing a uniform material layer based on chemical vapor deposition, including:
  • Step 302 Place the substrate and the stage in the reaction chamber, the substrate is set on the stage, and the growth surface of the substrate is away from the stage;
  • Step 304 Set the second quartz boat in the reaction chamber
  • Step 306 Set the first precursor in the second quartz boat
  • Step 308 Place the second precursor on the stage
  • Step 310 Heating the first precursor to a first preset temperature through the reaction chamber to generate a first gas-phase source material
  • Step 312 heating the second precursor to a second preset temperature through the reaction chamber to generate a second gas-phase source material
  • Step 314 pour carrier gas into the reaction chamber
  • Step 316 forming a material layer on the growth surface.
  • the second precursor is located between the substrate and the first precursor; the carrier gas is passed through the reaction chamber near one end of the second quartz boat; the second precursor is metal oxide, and the first precursor is sulfur powder and selenium. At least one of powder and tellurium powder, and the second preset temperature is between 600°C and 850°C.
  • the specific steps of providing the first gas-phase source material and the second gas-phase source material into the reaction chamber are further provided.
  • the first precursor and the second precursor are placed in the reaction chamber, the first precursor is heated to a first preset temperature to produce a first gaseous source material, and the second precursor is heated to the second The temperature is preset to generate the first gas-phase source material.
  • the first gas-phase source material and the second gas-phase source material can be guided to the top of the substrate growth layer by the introduced carrier gas. Further, the first gas-phase source material and the first gas-phase source material can be guided to the top of the substrate growth layer.
  • the two-phase source material undergoes a vapor deposition reaction to form a uniform and high-quality material layer on the growth layer of the substrate.
  • the first precursor and the second precursor are placed in the reaction chamber and heated to produce the first gas-phase source material and the second gas-phase source material.
  • the first gas-phase source material and the second gas-phase source material are directly in the reaction chamber.
  • the internal output facilitates the vapor deposition reaction between the first vapor source material and the second vapor source material; on the other hand, it can make full use of the waste heat temperature of the first vapor source material and the second vapor source material for vapor deposition reaction, and improve the heat utilization rate. , Can improve the formation efficiency of the material layer.
  • the introduction of the carrier gas plays a role of guiding the first gas-phase source material and the second gas-phase source material on the one hand; on the other hand, it protects the chemical vapor deposition reaction of the first gas-phase source material and the second gas-phase source material. The effect can improve the quality of the material layer.
  • the first preset temperature is a temperature at which the first precursor can be sublimated and gasified
  • the second preset temperature is a temperature at which the second precursor can be sublimated and gasified.
  • a step of placing the first precursor and the second precursor in the reaction chamber is further provided.
  • the first precursor is carried by the second quartz boat, and the second precursor is carried by the carrier stage, and the second precursor is located between the first precursor and the substrate.
  • the setting positions of the first precursor and the second precursor and the way of introducing the carrier gas are clarified.
  • the carrier gas passes through the first precursor and the second precursor in sequence after passing through the reaction chamber to reach the substrate, which is convenient for transferring the first precursor to the substrate.
  • the gas-phase source material and the second gas-phase source material are guided to the top of the substrate growth layer, which can improve the quality of the substrate material layer.
  • the composition of the first precursor and the second precursor is further provided, wherein the metal oxide can be titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide , Molybdenum oxide, tungsten oxide, iron oxide, and platinum oxide; further, the second precursor can also be a mixture of an auxiliary agent and a metal oxide, for example, the auxiliary agent can be sodium chloride or potassium iodide; Further, the second precursor may also be a variety of metal oxides or a mixture of metal oxides and metals, such as a mixture of molybdenum oxide and niobium oxide, a mixture of molybdenum oxide and rhenium powder, molybdenum oxide and tungsten oxide The mixture of tungsten oxide and niobium oxide, etc.
  • an embodiment of the present invention provides a method for preparing a uniform material layer based on chemical vapor deposition, wherein the reaction chamber is a tube furnace, and the tube furnace includes a first heating zone and a second heating zone,
  • the preparation method of uniform material layer based on chemical vapor deposition includes:
  • Step 402 Place the substrate and the stage in the reaction chamber, the substrate is set on the stage, and the growth surface of the substrate is away from the stage;
  • Step 404 Set the second quartz boat bearing the first precursor in the first heating zone, and set the stage bearing the second precursor in the second heating zone;
  • Step 406 Adjust the heating temperature of the first heating zone to the first preset temperature through the tube furnace to generate the first gas-phase source material
  • Step 408 Adjust the heating temperature of the second heating zone to a second preset temperature through the tube furnace to generate a second gas-phase source material
  • Step 410 Pass the carrier gas through the end of the tube furnace close to the first heating zone
  • Step 412 forming a material layer on the growth surface.
  • the carrier gas is hydrogen and/or argon.
  • the selection of the type of reaction chamber is further provided.
  • the tube furnace is equipped with a first heating zone and a second heating zone, which can respectively heat the first precursor and the second precursor , It is more convenient to use.
  • the type of carrier gas is further provided, through the supply of hydrogen and/or argon, on the one hand it plays the role of guiding the first gas phase source material and the second gas phase source material; on the other hand, it plays a role in guiding the first gas phase source material
  • the chemical vapor deposition reaction between the substance and the second gas-phase source substance plays a protective role and can improve the quality of the material layer.
  • an embodiment of the present invention provides a method for preparing a uniform material layer based on chemical vapor deposition, including:
  • Step 502 Place the substrate and the stage in the reaction chamber, the substrate is set on the stage, and the growth surface of the substrate is away from the stage;
  • Step 504 Provide a first gas-phase source material and a second gas-phase source material into the reaction chamber;
  • Step 506 Adjust the temperature of the position where the substrate is located through the reaction chamber to a third preset temperature for the first preset time, so that the first gas-phase source material and the second gas-phase source material undergo a vapor deposition reaction on the growth surface Form the material layer.
  • the first preset time is 3 minutes to 20 minutes.
  • a specific step of forming a material layer on the growth surface is further provided.
  • the temperature By adjusting the temperature to a third preset temperature and continuing for the first preset time, it is ensured that the first gas phase source material and the second gas phase source
  • the smooth progress of the vapor deposition reaction of the substance ensures that a uniform and high-quality material layer can be formed on the growth surface.
  • the third preset temperature can be selected based on the types of the first precursor and the second precursor or the material layer, and the third preset temperature is located in favor of or can promote the gas phase of the first gas source material and the second gas source material. The temperature of the deposition reaction.
  • the first preset time it is ensured that there is enough time for the first vapor source material and the second vapor source material to undergo vapor deposition reaction to form a material layer on the growth surface of the substrate.
  • an embodiment of the present invention provides a method for preparing a uniform material layer based on chemical vapor deposition.
  • the method for preparing a uniform material layer based on chemical vapor deposition includes:
  • Step 602 Place the substrate and the stage in the reaction chamber, the substrate is set on the stage, and the growth surface of the substrate is away from the stage;
  • Step 604 Provide the first gas-phase source material and the second gas-phase source material into the reaction chamber to form a material layer on the growth surface.
  • the arrows on both sides of the tube furnace 12 in FIG. 7 indicate the direction in which the carrier gas passes in and out, and the arrow direction above the substrate 8 indicates the setting direction of the growth surface of the substrate 8.
  • This embodiment is suitable for, but not limited to, the growth of transition metal sulfides.
  • the growth of molybdenum disulfide is taken as an example.
  • An appropriate amount of sulfur powder is taken as the first precursor 16 and placed in the second quartz boat 14, and the carrier gas is introduced
  • a quartz plate 1004 is placed on the first quartz boat 1002 downstream, the first quartz boat 1002 and the quartz plate 1004 are used as the stage 10, molybdenum trioxide is placed on the quartz plate 1004 as the second precursor 18, and the substrate 8 is grown Place it face up on the quartz plate 1004, behind the molybdenum trioxide.
  • the first quartz boat 1002 and the second quartz boat 14 are respectively placed in the first heating zone 1202 and the second heating zone 1204 of the tube furnace 12, and an appropriate amount of argon gas is introduced as a carrier gas, and the first heating zone 1202 And the second heating zone 1204 are respectively heated to a temperature suitable for the growth of molybdenum disulfide, and then maintained for a period of time. After the reaction is completed, it is naturally cooled to room temperature under the protection of the carrier gas, and a uniform and high-quality growth on the substrate 8 is obtained. Two-dimensional materials.
  • the substrate 8' is directly inverted on the quartz boat, and the growth surface of the substrate 8'is set toward the quartz boat.
  • the substrate 8 is placed on the quartz boat in this embodiment.
  • the growth surface of the substrate 8 is away from the quartz wafer. From the comparison of Fig. 8 and Fig. 9, it can be seen that the gas flow velocity distribution on the growth surface of the substrate 8 and the substrate 8'is significantly different.
  • the gas flow velocity of the part (edge part) where the growth surface is in contact with the quartz boat under the existing method is the same as that of the middle area. There is a clear difference in the airflow velocity.
  • the uneven airflow distribution leads to uneven distribution of the two-dimensional material grown on the growth surface, which will also affect the quality of the grown two-dimensional material.
  • the growth surface is placed upward.
  • the airflow velocity distribution on the surface is basically the same, so the uniformity and quality of the final two-dimensional material will be greatly improved.
  • the term “plurality” refers to two or more than two, unless clearly defined otherwise, the orientation or positional relationship indicated by the terms “upper” and “lower” are based on the drawings shown The orientation or positional relationship is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the pointed device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present invention;
  • the terms “connected”, “installed”, “fixed”, etc. should be understood in a broad sense.
  • “connected” can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or through an intermediate connection. The medium is indirectly connected.
  • the specific meanings of the above-mentioned terms in the present invention can be understood according to specific situations.

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Abstract

一种基于化学气相沉积的均匀材料层制备方法，包括：将衬底（8）及载物台（10）放置在反应腔中，所述衬底（8）设置在所述载物台（10）上，所述衬底（8）的生长面背离于所述载物台（10）；向所述反应腔内提供第一气相源物质及第二气相源物质进行化学气相沉积反应，在衬底（8）的生长面上形成材料层。通过将衬底（8）的生长面背离于载物台（10），衬底（8）的生长面上气流流速分布更为均匀，从而能够大大提高材料层的均匀性，能够大大提高材料层的质量。

Description

基于化学气相沉积的均匀材料层制备方法 技术领域
本发明涉及材料制备领域，具体而言，涉及一种基于化学气相沉积的均匀材料层制备方法。
背景技术
现有化学气相沉积(Chemical Vapor Deposition；CVD)生长方法将衬底倒扣在石英舟上，衬底的生长面朝向石英舟设置进行材料生长，所生长的材料层在基底上呈现从衬底中心到两侧的晶体分布不均匀的现象，获取的材料层质量低。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。
有鉴于此，本发明提出了一种基于化学气相沉积的均匀材料层制备方法，包括：将衬底及载物台放置在反应腔中，衬底设置在载物台上，衬底的生长面背离于载物台；向反应腔内提供第一气相源物质及第二气相源物质，在生长面上形成材料层。
本发明提供的基于化学气相沉积的均匀材料层制备方法，将衬底及载物台放置在反应腔中，衬底的生长面背离于载物台，而后向反应腔内提供第一气相源物质与第二气相源物质进行化学气相沉积反应，在衬底的生长面上形成材料层。通过将衬底的生长面背离于载物台，较比传统的生长面朝向石英舟设置的技术方案，本发明衬底的生长面上气流流速分布更为均匀，从而能够大大提高材料层的均匀性，能够大大提高材料层的质量。
另外，根据本发明提供的上述技术方案中的基于化学气相沉积的均匀材料层制备方法，还可以具有如下附加技术特征：
在上述技术方案中，进一步地，将衬底及载物台放置在反应腔中，衬 底设置在载物台上，衬底的生长面背离于载物台包括：将第一石英舟放置在反应腔中；将耐热片覆盖在第一石英舟上；将衬底放置耐热片上，衬底的生长面背离于耐热片。
在该技术方案中，进一步公开了将载物台及衬底放置在反应腔中的具体步骤。具体地，将第一石英舟放置在反应腔内，而后在第一石英舟上覆盖耐热片，第一石英舟与耐热片作为载物台，最后将衬底放置在耐热片上，其中衬底的生长面背离于耐热片。
具体地，将第一石英舟与耐热片作为载物台，一方面，能够承受反应腔内的较高温度，载物台具备稳定的化学性质，能够避免载物台影响第一气相源物质与第二气相源物质的化学气相沉积反应；另一方面，便于载物台的取材、组合与放置。将耐热片覆盖在第一石英舟上，以防止第一石英舟的暴露出的槽体影响衬底周围的气流分布，确保衬底生长面上气流分布均匀，进一步提高材料层的质量与均匀性。
在上述任一技术方案中，进一步地，耐热片为石英片。
在该技术方案中，进一步提供了耐热片的选材，石英片具备耐高温、热膨胀系数低的化学特性，将衬底放置在石英片上，石英片能够对衬底起到稳定的托举作用，确保能够在衬底生长面上形成均匀、高质量的材料层。
在上述任一技术方案中，进一步地，向反应腔内提供第一气相源物质及第二气相源物质包括：将第一前驱体及第二前驱体放置在反应腔中；通过反应腔将第一前驱体加热到第一预设温度，产生第一气相源物质；通过反应腔将第二前驱体加热到第二预设温度，产生第二气相源物质；向反应腔内通入载气。
在该技术方案中，进一步提供了向反应腔内提供第一气相源物质及第二气相源物质的具体步骤。具体地，将第一前驱体及第二前驱体放置在反应腔内，通过对第一前驱体加热到第一预设温度，以产生第一气相源物质，对第二前驱体加热到第二预设温度，以产生第而气相源物质，通过通入的载气能够将第一气相源物质及第二气相源物质引导至衬底生长层的上方，进一步地，第一气相源物质与第二气相源物质进行气相沉积反应即可在衬底的生长层上形成均匀、高质量的材料层。
具体地，将第一前驱体及第二前驱体放置在反应腔内加热以产生第一气相源物质及第二气相源物质，一方面第一气相源物质及第二气相源物质直接在反应腔内产出，便于第一气相源物质与第二气相源物质进行气相沉积反应；另一方面能够充分利用第一气相源物质与第二气相源物质的余热温度进行气相沉积反应，提高热利用率，能够提高材料层的形成效率。
具体地，通入载气，一方面起到引导第一气相源物质与第二气相源物质的作用；另一方面对第一气相源物质与第二气相源物质的化学气相沉积反应起到保护的作用，能够提高材料层的质量。
具体地，第一预设温度为能够使第一前驱体升华气化的温度；第二预设温度为能够使第二前驱体升华气化的温度。
在上述任一技术方案中，进一步地，将第一前驱体及第二前驱体放置在反应腔中包括：将第二石英舟设置在反应腔内；将第一前驱体设置在第二石英舟内；将第二前驱体放置在载物台上；其中，第二前驱体位于衬底与第一前驱体之间，载气经由反应腔靠近第二石英舟的一端通入。
在该技术方案中，进一步提供了将第一前驱体及第二前驱体放置在反应腔中的步骤。具体地，通过第二石英舟承载第一前驱体，通过载体物台承载第二前驱体，第二前驱体位于第一前驱体与衬底之间。明确了第一前驱体及第二前驱体的设置位置以及载气的通入方式，载气通入反应腔后依次通过第一前驱体及第二前驱体后到达衬底处，便于将第一气相源物质与第二气相源物质引导至衬底生长层上方，能够提高衬底材料层的质量。
在上述任一技术方案中，进一步地，反应腔为管式炉，管式炉包括第一加热区及第二加热区，向反应腔内上方提供第一气相源物质及第二气相源物质包括：
将承载有第一前驱体的第二石英舟设置在第一加热区内，将承载有第二前驱体的载物台设置在第二加热区内；
通过管式炉将第一加热区的加热温度调整至第一预设温度，产生第一气相源物质；
通过管式炉将第二加热区的加热温度调整至第二预设温度，产生第二气相源物质；
经由管式炉靠近第一加热区的一端通入载气。
在该技术方案中，进一步提供了反应腔的种类选取，通过管式炉的选取，管式炉具备第一加热区与第二加热区，能够分别对第一前驱体及第二前驱体进行加热，使用更为方便。
在上述任一技术方案中，进一步地，载气为氢气和/或氩气。
在该技术方案中，进一步提供了载气的种类，通过氢气和/或氩气的提供，一方面起到引导第一气相源物质与第二气相源物质的作用；另一方面对第一气相源物质与第二气相源物质的化学气相沉积反应起到保护的作用，能够提高材料层的质量。
在上述任一技术方案中，进一步地，在生长面上形成材料层包括：通过反应腔将衬底所处位置的温度调整至第三预设温度，持续第一预设时间，使得第一气相源物质与第二气相源物质进行气相沉积反应，在生长面上形成材料层。
在该技术方案中，进一步提供了在生长面上形成材料层的具体步骤，通过将温度调整至第三预设温度，并持续第一预设时长，确保第一气相源物质与第二气相源物质进行气相沉积反应的顺利进行，确保能够在生长面上形成均匀、高质量的材料层。
具体地，第三预设温度可以基于第一前驱体及第二前驱体或材料层的种类进行选取，第三预设温度位于利于或能够促进第一气相源物质与第二气相源物质进行气相沉积反应的温度。
在上述任一技术方案中，进一步地，第一预设时间为3min至20min。
在该技术方案中，通过第一预设时间的选取，确保有足够的时间供第一气相源物质与第二气相源物质进行气相沉积反应以在衬底的生长面上形成材料层。
在上述任一技术方案中，进一步地，第二前驱体为金属氧化物，第一前驱体为硫粉、硒粉、碲粉中的至少一种，第二预设温度为600℃至850℃之间。
在该技术方案中，进一步提供了第一前驱体及第二前驱体的组成，其中金属氧化物可以为钛氧化物、锆氧化物、铪氧化物、钒氧化物、铌氧化物、 钽氧化物、钼氧化物、钨氧化物、铁氧化物及铂氧化物中的一种；进一步地第二前驱体还可以为助剂与金属氧化物的混合物，例如助剂可以氯化钠或碘化钾；再进一步地第二前驱体也可以为多种金属氧化物或金属氧化物与金属粉末的混合物，例如钼氧化物与铌氧化物的混合物、钼氧化物与铼粉的混合物、钼氧化物与钨氧化物的混合物、钨氧化物与铌氧化物的混合物等。
本发明的附加方面和优点将在下面的描述部分中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1示出了本发明实施例一的基于化学气相沉积的均匀材料层制备方法的示意流程图；
图2示出了本发明实施例二的基于化学气相沉积的均匀材料层制备方法的示意流程图；
图3示出了本发明实施例三的基于化学气相沉积的均匀材料层制备方法的示意流程图；
图4示出了本发明实施例四的基于化学气相沉积的均匀材料层制备方法的示意流程图；
图5示出了本发明实施例五的基于化学气相沉积的均匀材料层制备方法的示意流程图；
图6示出了本发明具体实施例的基于化学气相沉积的均匀材料层制备方法的示意流程图；
图7示出了本发明的一个实施例的通过管式炉制备材料层的结构示意图；
图8示出了本发明的一个实施例的衬底的生长面气流分布示意图；
图9示出了现有技术中的衬底的生长面气流分布示意图。
其中，图7和图8附图标记与部件名称之间的对应关系为：
8衬底，10载物台，12管式炉，14第二石英舟，16第一前驱体，18第 二前驱体；
1002第一石英舟，1004石英片，1202第一加热区，1204第二加热区。
其中，图9附图标记与部件名称之间的对应关系为：
8’衬底。
具体实施方式
为了能够更清楚地理解本发明的上述目的、特征和优点，下面结合附图和具体实施方式对本发明进行进一步的详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是，本发明还可以采用其他不同于在此描述的方式来实施，因此，本发明的保护范围并不受下面公开的具体实施例的限制。
下面参照图1至图9来描述根据本发明一些实施例提供的基于化学气相沉积的均匀材料层制备方法。
实施例一
如图1所示，本发明的一个实施例提供了一种基于化学气相沉积的均匀材料层制备方法，包括：
步骤102：将衬底及载物台放置在反应腔中，衬底设置在载物台上，衬底的生长面背离于载物台；
步骤104：向反应腔内提供第一气相源物质及第二气相源物质，在生长面上形成材料层。
本发明提供的基于化学气相沉积的均匀材料层制备方法，将衬底及载物台放置在反应腔中，衬底的生长面背离于载物台，而后向反应腔内提供第一气相源物质与第二气相源物质进行化学气相沉积反应，在衬底的生长面上形成材料层。通过将衬底的生长面背离于载物台，较比传统的生长面朝向石英舟设置的技术方案，本发明衬底的生长面上气流流速分布更为均匀，从而能够大大提高材料层的均匀性，能够大大提高材料层的质量。
实施例二
如图2所示，本发明的一个实施例提供了一种基于化学气相沉积的均 匀材料层制备方法，包括：
步骤202：将第一石英舟放置在反应腔中；
步骤204：将石英片覆盖在第一石英舟上；
步骤206：将衬底放置石英片上，衬底的生长面背离于石英片；
步骤208：向反应腔内提供第一气相源物质及第二气相源物质，在生长面上形成材料层。
在该实施例中，进一步公开了将载物台及衬底放置在反应腔中的具体步骤。具体地，将第一石英舟放置在反应腔内，而后在第一石英舟上覆盖石英片，第一石英舟与石英片作为载物台，最后将衬底放置在石英片上，其中衬底的生长面背离于耐热片。
具体地，将第一石英舟与石英片作为载物台，能够承受反应腔的较高温度，通过载物台具备稳定的化学性质，能够避免载物台在较高温度下化学性质发生改变而影响第一气相源物质与第二气相源物质的化学气相沉积反应，同时便于载物台的取材、组合与放置；将石英片覆盖在第一石英舟上，以防止第一石英舟的暴露出的槽体影响衬底周围的气流分布，确保衬底生长面上气流分布均匀，进一步提高材料层的质量与均匀性。
在该实施例中，石英片具备耐高温、热膨胀系数低的化学特性，将衬底放置在石英片上，石英片能够对衬底起到稳定的托举作用，确保能够在衬底生长面上形成均匀、高质量的材料层。
实施例三
如图3所示，本发明的一个实施例提供了一种基于化学气相沉积的均匀材料层制备方法，包括：
步骤302：将衬底及载物台放置在反应腔中，衬底设置在载物台上，衬底的生长面背离于载物台；
步骤304：将第二石英舟设置在反应腔内；
步骤306：将第一前驱体设置在第二石英舟内；
步骤308：将第二前驱体放置在载物台上；
步骤310：通过反应腔将第一前驱体加热到第一预设温度，产生第一气相源物质；
步骤312：通过反应腔将第二前驱体加热到第二预设温度，产生第二气相源物质；
步骤314：向反应腔内通入载气；
步骤316：在生长面上形成材料层。
其中，第二前驱体位于衬底与第一前驱体之间；载气经由反应腔靠近第二石英舟的一端通入；第二前驱体为金属氧化物，第一前驱体为硫粉、硒粉、碲粉中的至少一种，第二预设温度为600℃至850℃之间。
在该实施例中，进一步提供了向反应腔内提供第一气相源物质及第二气相源物质的具体步骤。具体地，将第一前驱体及第二前驱体放置在反应腔内，通过对第一前驱体加热到第一预设温度，以产生第一气相源物质，对第二前驱体加热到第二预设温度，以产生第而气相源物质，通过通入的载气能够将第一气相源物质及第二气相源物质引导至衬底生长层的上方，进一步地，第一气相源物质与第二气相源物质进行气相沉积反应即可在衬底的生长层上形成均匀、高质量的材料层。
具体地，将第一前驱体及第二前驱体放置在反应腔内加热以产生第一气相源物质及第二气相源物质，一方面第一气相源物质及第二气相源物质直接在反应腔内产出，便于第一气相源物质与第二气相源物质进行气相沉积反应；另一方面能够充分利用第一气相源物质与第二气相源物质的余热温度进行气相沉积反应，提高热利用率，能够提高材料层的形成效率。
具体地，通入载气，一方面起到引导第一气相源物质与第二气相源物质的作用；另一方面对第一气相源物质与第二气相源物质的化学气相沉积反应起到保护的作用，能够提高材料层的质量。
具体地，第一预设温度为能够使第一前驱体升华气化的温度；第二预设温度为能够使第二前驱体升华气化的温度。
在该实施例中，进一步提供了将第一前驱体及第二前驱体放置在反应腔中的步骤。具体地，通过第二石英舟承载第一前驱体，通过载体物台承载第二前驱体，第二前驱体位于第一前驱体与衬底之间。明确了第一前驱体及第二前驱体的设置位置以及载气的通入方式，载气通入反应腔后依次通过第一前驱体及第二前驱体后到达衬底处，便于将第一气相源物质与第 二气相源物质引导至衬底生长层上方，能够提高衬底材料层的质量。
在该实施例中，进一步提供了第一前驱体及第二前驱体的组成，其中金属氧化物可以为钛氧化物、锆氧化物、铪氧化物、钒氧化物、铌氧化物、钽氧化物、钼氧化物、钨氧化物、铁氧化物及铂氧化物中的一种；进一步地第二前驱体还可以为助剂与金属氧化物的混合物，例如助剂可以氯化钠或碘化钾；再进一步地第二前驱体也可以为多种金属氧化物或金属氧化物与金属的混合物，例如钼氧化物与铌氧化物的混合物、钼氧化物与铼粉的混合物、钼氧化物与钨氧化物的混合物、钨氧化物与铌氧化物的混合物等。
实施例四
如图4所示，本发明的一个实施例提供了一种基于化学气相沉积的均匀材料层制备方法，其中，反应腔为管式炉，管式炉包括第一加热区及第二加热区，基于化学气相沉积的均匀材料层制备方法包括：
步骤402：将衬底及载物台放置在反应腔中，衬底设置在载物台上，衬底的生长面背离于载物台；
步骤404：将承载有第一前驱体的第二石英舟设置在第一加热区内，将承载有第二前驱体的载物台设置在第二加热区内；
步骤406：通过管式炉将第一加热区的加热温度调整至第一预设温度，产生第一气相源物质；
步骤408：通过管式炉将第二加热区的加热温度调整至第二预设温度，产生第二气相源物质；
步骤410：经由管式炉靠近第一加热区的一端通入载气；
步骤412：在生长面上形成材料层。
其中，载气为氢气和/或氩气。
在该实施例中，进一步提供了反应腔的种类选取，通过管式炉的选取，管式炉具备第一加热区与第二加热区，能够分别对第一前驱体及第二前驱体进行加热，使用更为方便。
在该实施例中，进一步提供载气的种类，通过氢气和/或氩气的提供，一方面起到引导第一气相源物质与第二气相源物质的作用；另一方面对第一气相源物质与第二气相源物质的化学气相沉积反应起到保护的作用，能 够提高材料层的质量。
实施例五
如图5所示，本发明的一个实施例提供了一种基于化学气相沉积的均匀材料层制备方法，包括：
步骤502：将衬底及载物台放置在反应腔中，衬底设置在载物台上，衬底的生长面背离于载物台；
步骤504：向反应腔内提供第一气相源物质及第二气相源物质；
步骤506：通过反应腔将衬底所处位置的温度调整至第三预设温度，持续第一预设时间，使得第一气相源物质与第二气相源物质进行气相沉积反应，在生长面上形成材料层。
其中，第一预设时间为3min至20min。
在该实施例中，进一步提供了在生长面上形成材料层的具体步骤，通过将温度调整至第三预设温度，并持续第一预设时长，确保第一气相源物质与第二气相源物质进行气相沉积反应的顺利进行，确保能够在生长面上形成均匀、高质量的材料层。
具体地，第三预设温度可以基于第一前驱体及第二前驱体或材料层的种类进行选取，第三预设温度位于利于或能够促进第一气相源物质与第二气相源物质进行气相沉积反应的温度。
在该实施例中，通过第一预设时间的选取，确保有足够的时间供第一气相源物质与第二气相源物质进行气相沉积反应以在衬底的生长面上形成材料层。
具体实施例
如图6至图9所示，本发明的一个实施例提供了一种基于化学气相沉积的均匀材料层制备方法，如图6所示，该基于化学气相沉积的均匀材料层制备方法包括：
步骤602：将衬底及载物台放置在反应腔中，衬底设置在载物台上，衬底的生长面背离于载物台；
步骤604：向反应腔内提供第一气相源物质及第二气相源物质，在生长面上形成材料层。
如图7所示，其中图7中管式炉12两侧的箭头表示载气通入与排出的方向，衬底8上方箭头方向表示衬底8的生长面的设置方向。该实施例适用于但不限于过渡金属硫化物的生长，该实施例以生长二硫化钼为例，取适量硫粉作为第一前驱体16放置于第二石英舟14中，在通入载气下游的第一石英舟1002上放置石英片1004，第一石英舟1002与石英片1004作为载物台10，将三氧化钼作为第二前驱体18放置在石英片1004上，衬底8的生长面朝上放在石英片1004上，位于三氧化钼后方。将第一石英舟1002及第二石英舟14分别放置在管式炉12的第一加热区1202及第二加热区1204内，通入合适量的氩气作为载气，将第一加热区1202及第二加热区1204分别加热到适合二硫化钼生长的温度，然后保持一段时间，待反应结束后在载气的保护下自然冷却到室温，就得到在衬底8上生长均匀且高质量的二维材料。
如图9所示，现有技术中衬底8’直接倒扣在石英舟上，衬底8’生长面朝向石英舟设置，如图8所示，该实施例中将衬底8放置在石英片1004上，衬底8的生长面背离于石英片。通过图8与图9对比可见，衬底8与衬底8’生长面上的气流速度分布明显不同，现有方法下生长面跟石英舟接触的部分(边缘部分)的气流速度跟中间区域的气流速度有明显的区别，气流分布不均匀导致在生长面上生长的二维材料分布不均匀，也会影响生长的二维材料的质量，而在本实施例的方法中，生长面朝上放置在石英片1004上，表面的气流速度分布基本无差别，所以最终得到的二维材料的均匀性和质量都会大大提升。
在本发明的描述中，术语“多个”则指两个或两个以上，除非另有明确的限定，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制；术语“连接”、“安装”、“固定”等均应做广义理解，例如，“连接”可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本说明书的描述中，术语“一个实施例”、“一些实施例”、“具体实施例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或实例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种基于化学气相沉积的均匀材料层制备方法，其特征在于，包括：
    将衬底及载物台放置在反应腔中，所述衬底设置在所述载物台上，所述衬底的生长面背离于所述载物台；
    向所述反应腔内提供第一气相源物质及第二气相源物质，在所述生长面上形成材料层。
  2. 根据权利要求1所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，所述将衬底及载物台放置在反应腔中，所述衬底设置在所述载物台上，所述衬底的生长面背离于所述载物台包括：
    将第一石英舟放置在反应腔中；
    将耐热片覆盖在所述第一石英舟上；
    将衬底放置在所述耐热片上，所述衬底的生长面背离于所述耐热片。
  3. 根据权利要求2所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，
    所述耐热片为石英片。
  4. 根据权利要求1所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，所述向所述反应腔内提供第一气相源物质及第二气相源物质包括：
    将第一前驱体及第二前驱体放置在反应腔中；
    通过反应腔将所述第一前驱体加热到第一预设温度，产生所述第一气相源物质；
    通过反应腔将所述第二前驱体加热到第二预设温度，产生所述第二气相源物质；
    向所述反应腔内通入载气。
  5. 根据权利要求4所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，所述将第一前驱体及第二前驱体放置在反应腔中包括：
    将第二石英舟设置在所述反应腔内；
    将第一前驱体设置在所述第二石英舟内；
    将所述第二前驱体放置在所述载物台上；
    其中，所述第二前驱体位于所述衬底与所述第一前驱体之间，所述载气经由所述反应腔靠近所述第二石英舟的一端通入。
  6. 根据权利要求5所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，所述反应腔为管式炉，所述管式炉包括第一加热区及第二加热区，所述向所述反应腔内上方提供第一气相源物质及第二气相源物质包括：
    将承载有第一前驱体的所述第二石英舟设置在所述第一加热区内，将承载有第二前驱体的所述载物台设置在所述第二加热区内；
    通过所述管式炉将所述第一加热区的加热温度调整至第一预设温度，产生所述第一气相源物质；
    通过所述管式炉将所述第二加热区的加热温度调整至第二预设温度，产生所述第二气相源物质；
    经由所述管式炉靠近所述第一加热区的一端通入载气。
  7. 根据权利要求4至6中任一项所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，
    所述载气为氢气和/或氩气。
  8. 根据权利要求1至6中任一项所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，在所述生长面上形成材料层包括：
    通过反应腔将所述衬底所处位置的温度调整至第三预设温度，持续第一预设时间，使得第一气相源物质与第二气相源物质进行气相沉积反应，在所述生长面上形成材料层。
  9. 根据权利要求8所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，
    所述第一预设时间为3min至20min。
  10. 根据权利要求4至6中任一项所述的基于化学气相沉积的均匀材料层制备方法，其特征在于，
    所述第二前驱体为金属氧化物，所述第一前驱体为硫粉、硒粉、碲粉中的至少一种，所述第二预设温度为600℃至850℃之间。
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CN110983297A (zh) * 2019-12-23 2020-04-10 重庆大学 基于化学气相沉积的均匀材料层制备方法

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CN115108580A (zh) * 2022-05-11 2022-09-27 中国科学院长春光学精密机械与物理研究所 氧化镓微米线制备方法、日盲紫外探测器及其制备方法
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