CN104746137A - 一种层状的二硫化钼薄膜的制备方法 - Google Patents
一种层状的二硫化钼薄膜的制备方法 Download PDFInfo
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Cited By (8)
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CN105161576A (zh) * | 2015-10-20 | 2015-12-16 | 华中科技大学 | 一种基于二硫化钼的肖特基异质结太阳能电池及其制备方法 |
CN105734528A (zh) * | 2016-03-09 | 2016-07-06 | 无锡盈芯半导体科技有限公司 | 一种基于脉冲气流法生长层状二硫化钼薄膜的方法 |
CN106238077A (zh) * | 2016-07-28 | 2016-12-21 | 中国地质大学(北京) | 一种碳纤维@二硫化钼纳米片核壳复合结构及其制备方法 |
CN108085742A (zh) * | 2016-11-23 | 2018-05-29 | Imec 非营利协会 | 形成过渡金属二硫属化物(tmdc)材料层的方法 |
CN109336181A (zh) * | 2018-09-20 | 2019-02-15 | 天津大学 | 一种二维过渡金属硫族化合物的制备方法 |
CN111041450A (zh) * | 2020-01-03 | 2020-04-21 | 北京工业大学 | 一种碱辅助化学气相沉积生长大面积单层二硫化钨的制备方法 |
CN111218717A (zh) * | 2020-02-17 | 2020-06-02 | 燕山大学 | 一种生长Fe掺杂单层WS2二维晶体的方法 |
WO2021129450A1 (zh) * | 2019-12-23 | 2021-07-01 | 重庆大学 | 基于化学气相沉积的均匀材料层制备方法 |
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CN103194729A (zh) * | 2013-03-27 | 2013-07-10 | 中国科学院物理研究所 | 金属硫属化物薄膜的制备方法 |
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YI ZHANG ET AL.: "Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2", 《NATURE NANOTECHNOLOGY》 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105161576A (zh) * | 2015-10-20 | 2015-12-16 | 华中科技大学 | 一种基于二硫化钼的肖特基异质结太阳能电池及其制备方法 |
CN105161576B (zh) * | 2015-10-20 | 2017-04-12 | 华中科技大学 | 一种基于二硫化钼的肖特基异质结太阳能电池及其制备方法 |
CN105734528A (zh) * | 2016-03-09 | 2016-07-06 | 无锡盈芯半导体科技有限公司 | 一种基于脉冲气流法生长层状二硫化钼薄膜的方法 |
CN106238077A (zh) * | 2016-07-28 | 2016-12-21 | 中国地质大学(北京) | 一种碳纤维@二硫化钼纳米片核壳复合结构及其制备方法 |
CN108085742A (zh) * | 2016-11-23 | 2018-05-29 | Imec 非营利协会 | 形成过渡金属二硫属化物(tmdc)材料层的方法 |
CN108085742B (zh) * | 2016-11-23 | 2020-06-09 | Imec 非营利协会 | 形成过渡金属二硫属化物(tmdc)材料层的方法 |
CN109336181A (zh) * | 2018-09-20 | 2019-02-15 | 天津大学 | 一种二维过渡金属硫族化合物的制备方法 |
WO2021129450A1 (zh) * | 2019-12-23 | 2021-07-01 | 重庆大学 | 基于化学气相沉积的均匀材料层制备方法 |
CN111041450A (zh) * | 2020-01-03 | 2020-04-21 | 北京工业大学 | 一种碱辅助化学气相沉积生长大面积单层二硫化钨的制备方法 |
CN111218717A (zh) * | 2020-02-17 | 2020-06-02 | 燕山大学 | 一种生长Fe掺杂单层WS2二维晶体的方法 |
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