WO2021121046A1 - 一种化学机械抛光液 - Google Patents

一种化学机械抛光液 Download PDF

Info

Publication number
WO2021121046A1
WO2021121046A1 PCT/CN2020/133605 CN2020133605W WO2021121046A1 WO 2021121046 A1 WO2021121046 A1 WO 2021121046A1 CN 2020133605 W CN2020133605 W CN 2020133605W WO 2021121046 A1 WO2021121046 A1 WO 2021121046A1
Authority
WO
WIPO (PCT)
Prior art keywords
chemical mechanical
mechanical polishing
polishing liquid
acid
concentration
Prior art date
Application number
PCT/CN2020/133605
Other languages
English (en)
French (fr)
Inventor
郁夏盈
王晨
何华锋
李星
史经深
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Priority to KR1020227020733A priority Critical patent/KR20220120568A/ko
Publication of WO2021121046A1 publication Critical patent/WO2021121046A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

Definitions

  • the invention relates to a chemical mechanical polishing liquid.
  • An integrated circuit consists of a silicon substrate and millions of components on it. These elements form an interconnect structure through multilayer interconnects. Layers and structures include a variety of materials, such as single crystal silicon, silicon dioxide, tungsten, and various other conductive, semiconductive, and dielectric materials. Techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD) are used in the preparation of thin layers of these materials, after which excess materials need to be removed. As multiple layers of material are deposited and removed, the uppermost surface of the wafer becomes uneven.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • CMP chemical mechanical polishing
  • Chemical mechanical polishing is composed of chemical action, mechanical action, and a combination of two actions.
  • the wafer is fixed on the polishing head and its front surface is in contact with the polishing pad in the CMP equipment.
  • the polishing head moves linearly on the polishing pad or rotates in the same direction as the polishing table.
  • a polishing composition (“slurry") is injected between the wafer and the polishing pad at a certain flow rate, and the slurry is spread on the polishing pad due to centrifugal effect.
  • slurry polishing composition
  • CMP can be used to remove unwanted surface morphology and surface defects, such as rough surfaces, adsorbed impurities, lattice damage, scratches, etc.
  • tungsten has played an increasingly important role in the preparation of semiconductor materials. Because tungsten has strong resistance to electron migration under high current density and can form good ohmic contacts with silicon, it is often used to prepare metal vias and contacts. At the same time, adhesive layers, such as TiN and Ti, are used to connect them. Connect with SiO2. CMP can be used to polish tungsten, but due to the large amount of metal ions and active oxidants contained in the polishing slurry, tungsten corrosion has become commonplace. Severe corrosion may form deep tungsten vias, causing uneven tungsten surfaces to further appear on the next layer of metal/non-metal components, causing poor electrical contact problems. Corrosion may also cause the appearance of "keyhole".
  • the "keyhole” phenomenon refers to: during the deposition of tungsten, because the substrate is not flat, occasionally insufficient deposition may occur, resulting in a cavity in the center of the tungsten via, and excessive corrosion causes the void in the center of these tungsten vias to be exposed come out. This phenomenon can cause serious contact problems, resulting in a decrease in yield.
  • US Pat. No. 6,136,711 discloses the use of amino acids as corrosion inhibitors for tungsten polishing.
  • the addition of amino acids can inhibit the corrosion of tungsten to a certain extent, but with the development of chip manufacturing technology, chip circuits are becoming more and more complex, which puts forward higher requirements on the polishing liquid.
  • Amino acid corrosion inhibitors can only have a moderate corrosion inhibitory effect in many systems today, and it has been difficult to adapt to a variety of tungsten polishing requirements.
  • US Patent No. 8865013 discloses a tungsten polishing composition containing a double quaternary ammonium salt corrosion inhibitor.
  • the composition can better inhibit the static corrosion of metal tungsten, but its oxidant is KIO 3 instead of hydrogen peroxide, resulting in a very low tungsten polishing speed of the composition.
  • US Patent No. 9566686 discloses a tungsten polishing composition in which abrasive particles modified with a permanent positive charge (>15mV) and a quaternary ammonium salt corrosion inhibitor with a long alkyl chain are used. Although this system can better inhibit tungsten corrosion, the preparation of abrasive particles is cumbersome, the cost is high, and the tungsten polishing rate is not high. It can be seen from the above facts that for tungsten polishing compositions, inhibiting tungsten corrosion is not only challenging but also of important practical significance.
  • the invention provides a chemical mechanical polishing liquid, which comprises abrasive particles, a catalyst, a stabilizer, a corrosion inhibitor containing both amino sugar and a cyclic alcohol structure, an oxidant, water and a pH regulator.
  • the corrosion inhibitor is formed by connecting one to five amino sugar molecules and several non-sugar moiety cyclic alcohols or amino cyclic alcohols through ether bonds.
  • the corrosion inhibitor is an aminoglycoside antibiotic.
  • the corrosion inhibitor is selected from streptomycin, kanamycin, tobramycin, neomycin, spectinomycin, gentamicin, sisomicin, micronomicin, amikacin Star, netilmicin or one or more of its sulfuric acid, nitric acid, and hydrochloride.
  • streptomycin is streptomycin sulfate, and the structure of the streptomycin sulfate is shown in Formula 1:
  • concentration of the corrosion inhibitor ranges from 0.005% to 0.1%.
  • concentration of the corrosion inhibitor ranges from 0.005% to 0.04%.
  • the abrasive particles are SiO 2 .
  • the concentration of the abrasive particles ranges from 0.5% to 3%.
  • the concentration of the abrasive particles ranges from 1% to 3%.
  • the catalyst is a metal cation catalyst.
  • the metal cation catalyst is ferric nitrate nonahydrate.
  • concentration of the ferric nitrate nonahydrate ranges from 0.01% to 0.1%.
  • concentration of the ferric nitrate nonahydrate ranges from 0.01% to 0.03%.
  • the stabilizer is an organic stabilizer.
  • the organic stabilizer is a carboxylic acid that can be complexed with iron.
  • carboxylic acid that can be complexed with iron is one or more of phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid, and maleic acid.
  • the stabilizer is malonic acid.
  • the concentration of the malonic acid ranges from 0.01% to 0.09%.
  • the concentration of the malonic acid ranges from 0.01% to 0.06%.
  • the oxidant is H 2 O 2 .
  • the concentration of the oxidant is 2%.
  • the pH adjusting agent is HNO 3 .
  • pH value is 2-4.
  • pH ⁇ 2 chemical mechanical polishing liquid is dangerous, and pH>4 will cause instability of abrasive particles, Fe precipitation and other defects.
  • The% in the concentration in the present invention all refers to the mass concentration.
  • the invention provides a chemical mechanical polishing liquid that can reduce the static corrosion rate of tungsten while ensuring a high polishing rate of tungsten and a moderate polishing rate of silicon oxide.
  • the tungsten surface protects it from the corrosion of oxidants and does not affect the speed. Furthermore, the condition of the metal surface after polishing is improved, and the yield rate is improved.
  • the polishing machine is a 12-inch polishing machine Reflexion LK from Applied Materials, with a pressure of 2.0 psi, a polishing disc and polishing head rotation speed of 93/87 rpm, a polishing pad IC1010, a polishing fluid flow rate of 150 ml/min, and a polishing time of 1 minute. .
  • Static corrosion test of tungsten immerse a tungsten wafer of about 5cm ⁇ 5cm in the preheated polishing slurry at 45°C, immerse it for 2 minutes, and take it out for washing. Before the wafer is put in and after it is taken out and cleaned, a four-point probe tester (model RT 70/RG 7B) of Napson is used to test the thickness of the metal layer of the wafer to obtain the corrosion value.
  • Examples 1-7 show that the chemical mechanical polishing solution of the present invention can perform high-speed polishing of tungsten (specifically, the tungsten polishing speed of Example 1 in Table 2 is 2013A/min, and the tungsten polishing speed of Example 2 is 2029A/min. min, the tungsten polishing speed of Example 3 is 2124A/min, the tungsten polishing speed of Example 4 is 2298A/min, the tungsten polishing speed of Example 5 is 2009A/min, and the tungsten polishing speed of Example 6 is 1931A/min.
  • the tungsten polishing speed of Example 1 in Table 2 is 2013A/min
  • the tungsten polishing speed of Example 2 is 2029A/min. min
  • the tungsten polishing speed of Example 3 is 2124A/min
  • the tungsten polishing speed of Example 4 is 2298A/min
  • the tungsten polishing speed of Example 5 is 2009A/min
  • the tungsten polishing speed of Example 6 is 1931A/min.
  • the polishing rate of tungsten in Example 7 is 1866A/min), and it also has a moderate polishing rate for silicon oxide (specifically, the polishing rate of silicon oxide in Example 1 in Table 2 is 574A/min, and the silicon oxide polishing rate in Example 2 is 574A/min.
  • the polishing speed was 592A/min
  • the silicon oxide polishing speed of Example 3 was 580A/min
  • the silicon oxide polishing speed of Example 4 was 583A/min
  • the silicon oxide polishing speed of Example 5 was 591A/min
  • the silicon oxide polishing speed of Example 5 was 591A/min.
  • the silicon oxide polishing speed is 598A/min, and the silicon oxide polishing speed of Example 7 is 586A/min), and at the same time, it can inhibit the static corrosion of tungsten (specifically, the tungsten corrosion rate of Example 1 in Table 2 is 64A/min).
  • the tungsten corrosion rate of Example 2 was 55A/min
  • the tungsten corrosion rate of Example 3 was 42A/min
  • the tungsten corrosion rate of Example 4 was 69A/min
  • the tungsten corrosion rate of Example 5 was 21A/min.
  • the tungsten corrosion rate of Example 6 is 5 A/min
  • the tungsten corrosion rate of Example 7 is 0).
  • Example 7 For the preferred streptomycin sulfate (see Examples 3-7), it can be found that as the amount of corrosion inhibitor increases (specifically, from 0.005% in Example 4 to 0.01% in Example 3, to Example 5 0.02%, to 0.04% of Example 6, and then to 0.1% of Example 7), the corrosion effect is correspondingly better (specifically, from the corrosion rate of Example 4 of 69A/min, to the corrosion rate of Example 3 The corrosion rate is 42A/min, the corrosion rate to Example 5 is 21A/min, the corrosion rate to Example 6 is 5A/min, and the corrosion rate to Example 7 is 0), in 0.1% concentration of Streptomyces sulfate Under normal conditions, the static corrosion of tungsten can even be completely suppressed (the tungsten corrosion rate in Example 7 is 0).
  • the corrosion inhibitor has a certain effect on the tungsten polishing speed, and to a certain extent, it will slightly inhibit the tungsten polishing speed (see Examples 4-7, as the concentration of the corrosion inhibitor increases, the static corrosion rate of tungsten is Gradually decrease, but the polishing rate of tungsten is also reduced accordingly.), but has no effect on the polishing rate of silicon oxide.
  • the chemical mechanical polishing liquid containing gentamicin, neomycin sulfate, or streptomycin sulfate respectively has the polishing rate of tungsten and the static corrosion inhibitory effect on tungsten metal in order: sulfuric acid Streptomycin (42A/min)> neomycin sulfate (55A/min)> gentamicin (64A/min), but the effect on the polishing rate of silicon oxide is not obvious.

Abstract

提供一种化学机械抛光液，包括：研磨颗粒、催化剂、稳定剂、同时含有胺基糖和环醇结构的腐蚀抑制剂、氧化剂、水和pH调节剂。提供了一种化学机械抛光液，可以在保证高的钨的抛光速率以及中等的氧化硅抛光速率的同时，降低钨的静态腐蚀速率，从而改善抛光后的金属表面状况，提高良率。

Description

一种化学机械抛光液 技术领域
本发明涉及一种化学机械抛光液。
背景技术
随着现代半导体技术的不断发展，电子部件微小化已经成为制备高性能半导体材料的必然趋势。一个集成电路包含了硅基材和其上的数以百万计的元件。这些元件通过多层互连件形成互连结构。层和结构包括多种材料，如单晶硅、二氧化硅、钨和各种其它导电、半导电和电介质材料。物理气相沉积(PVD)、化学气相沉积(CVD)和等离子体增强化学气相沉积(PECVD)等技术被运用于这些材料薄层的制备，之后多余的材料需要予以去除。随着多层材料的沉积和去除，晶片的最上表面变得不平坦。这些不平坦可能导致产品的各种缺陷，因此导电层和绝缘介质层的平坦化技术变得至关重要。二十世纪80年代，由IBM公司首创的化学机械抛光(CMP)技术被认为是目前全局平坦化的最有效的方法。
化学机械抛光由化学作用、机械作用以及两种作用结合而成。通常，晶片被固定于研磨头上，并将其正面与CMP设备中的抛光垫接触。在一定压力下，研磨头在抛光垫上线性移动或是沿着与研磨台一样的运动方向旋转。与此同时，在晶片和抛光垫之间以一定流量注入抛光组合物(“浆料”)，浆料因离心作用平铺在抛光垫上。于是，在化学和机械的双重作用下，晶片表面被抛光并实现全局平坦化。CMP可用于去除不需要的表面形貌和表面缺陷，如粗糙表面、吸附的杂质、晶格损伤、划痕等。
近年来，钨在半导体材料的制备中发挥越来越重要的作用。由于钨在高电流密度下具有强的抗电子迁移能力，能与硅形成很好的欧姆接触，所以常常被用于制备金属通路和触点，同时使用粘结层，如TiN和Ti，将其与SiO2连接。CMP可以用来进行钨的抛光，但是由于抛光浆料内含有的大量金属离子和活泼氧化剂等组分，钨的腐蚀现象变得司空见惯。严重的腐蚀可能形成深陷的钨通路，导致不平坦的钨表面进一步呈现在下一层金属/非金属元件上，造成不良电接触问题。腐蚀还可能导致“锁眼”现象的出现。“锁眼”现象是指：在钨的淀积过程中，因为基底不平整，偶尔会出现淀积不充分的情况，导致钨通路中心出现空洞，由于过度腐蚀，造成这些钨通路中心的空洞暴露出来。该现象会造成严重的接触问题，导致良率下降。
针对这一问题，腐蚀抑制剂的开发显得尤为重要。如美国专利US 6136711公开了使用氨基酸作为钨抛光腐蚀抑制剂的方法。氨基酸的加入可以在一定程度上抑制钨的腐蚀，但是随着芯片制造技术的发展，芯片电路日趋复杂，这对抛光液提出了更高的要求。氨基酸腐蚀抑制剂在如今很多体系中只能起到中等的抑制腐蚀效果，已经很难适应多种多样的钨抛光要求。美国专利US 8865013公开了一种含有双季铵盐腐蚀抑制剂的钨抛光组合物。该组合物可以较好的抑制金属钨的静态腐蚀，但是其氧化剂是KIO 3而不是双氧水，造成该组合物的钨抛光速度非常低。美国专利US 9566686公开了一种钨抛光组合物，该组合物中使用了修饰有永久正电荷(>15mV)的研磨颗粒以及具有长烷基链的季铵盐腐蚀抑制剂。虽然该体系可以较好地抑制钨的腐蚀，但是研磨颗粒制备繁琐，成本较高，且钨抛光速率不高。由上述事实可见，对于钨抛光组合物，抑制钨的腐蚀不仅具有挑战性也具有重要的实际意义。
发明内容
为解决上述现有技术中的化学机械抛光液在钨抛光过程中存在的无法抑制金属钨的静态腐蚀的同时保持高的钨抛光速率以及中等的氧化硅抛光速率的问题。
本发明提供一种化学机械抛光液，包括：研磨颗粒、催化剂、稳定剂、同时含有胺基糖和环醇结构的腐蚀抑制剂、氧化剂、水和pH调节剂。
进一步地，所述腐蚀抑制剂由一个至五个氨基糖分子和若干非糖部分的环醇或者氨基环醇通过醚键连接而成。
进一步地，所述腐蚀抑制剂是氨基苷类抗生素。
进一步地，所述腐蚀抑制剂选自链霉素、卡那霉素、妥布霉素、新霉素、大观霉素、庆大霉素、西索米星、小诺米星、阿米卡星、奈替米星或其硫酸、硝酸、盐酸盐中的一种或多种。
进一步地，所述链霉素为硫酸链霉素，所述硫酸链霉素的结构见式一：
Figure PCTCN2020133605-appb-000001
进一步地，所述腐蚀抑制剂的浓度范围为0.005％～0.1％。
进一步地，所述腐蚀抑制剂的浓度范围为0.005％～0.04％。
进一步地，所述研磨颗粒为SiO 2。
进一步地，所述研磨颗粒的浓度范围为0.5％～3％。
进一步地，所述研磨颗粒的浓度范围为1％～3％。
进一步地，所述催化剂为金属阳离子催化剂。
进一步地，所述金属阳离子催化剂为九水硝酸铁。
进一步地，所述九水硝酸铁的浓度范围为0.01％～0.1％。
进一步地，所述九水硝酸铁的浓度范围为0.01％～0.03％。
进一步地，所述稳定剂为有机稳定剂。
进一步地，所述有机稳定剂为可以和铁络合的羧酸。
进一步地，所述可以和铁络合的羧酸为邻苯二甲酸、草酸、丙二酸、丁二酸、己二酸、柠檬酸、马来酸中的一种或多种。
进一步地，所述稳定剂为丙二酸。
进一步地，所述丙二酸的浓度范围为0.01％～0.09％。
进一步地，所述丙二酸的浓度范围为0.01％～0.06％。
进一步地，所述氧化剂是H 2O 2。
进一步地，所述氧化剂的浓度是2％。
进一步地，所述pH调节剂是HNO 3。
进一步地，pH值为2～4。当pH<2时，化学机械抛光液为危险品，pH>4会导致研磨颗粒不稳定，Fe析出等缺陷。
本发明的所有试剂均市售可得。
本发明所述浓度中的％均指的是质量浓度。
与现有技术相比较，本发明的优势在于：
本发明提供了一种化学机械抛光液可以在保证高的钨的抛光速率以及中等的氧化硅抛光速率的同时，降低钨的静态腐蚀速率。本技术中，抑制腐蚀的机理可以解释为：腐蚀抑制剂具有多个桥连的胺基，在pH＝2～4时，会生产R 3N +H结构，该结构可以吸附在带负电荷的钨表面，从而保护其不受氧化剂的腐蚀，并且不会对速度产生影响。进而改善抛光后的金属表面状况，提高良率。
具体实施方式
下面通过具体实施例对本发明抛光钨的化学机械抛光组合物进行详细描述，以使更好的理解本发明，但下述实施例并不限制本发明范围。
实施例
具体实施例以及对比例按表1中所给配方，将所有组分溶解混合均匀，用水补足质量百分比至100％。用pH调节剂调节pH至期望值。
表1.实施例及对比例的组分种类及浓度
Figure PCTCN2020133605-appb-000002
Figure PCTCN2020133605-appb-000003
效果例
按表1配方根据下述实验条件对钨、氧化硅晶圆进行抛光和静态腐蚀测量。
具体抛光条件：抛光机台为应用材料公司的12吋抛光机台Reflexion LK，压力2.0psi，抛光盘及抛光头转速93/87rpm，抛光垫IC1010，抛光液流速150ml/min，抛光时间为1分钟。
钨的静态腐蚀测试：将约5cm×5cm的钨晶片浸入经过预热的45℃抛光浆料，浸没2分钟，取出冲洗。在晶片放入前和取出清洗后，分别使用Napson公司的四点探针测试仪(型号RT 70/RG 7B)测试该晶片金属层厚度，得到腐蚀值。
表2.不同实施例及对比例对钨晶圆抛光的钨抛光速度、氧化硅抛光速度、钨金属的静态腐蚀速率
  钨抛光速度(A/min) 氧化硅抛光速度(A/min) 腐蚀(A/min)
实施例1 2013 574 64
实施例2 2029 592 55
实施例3 2124 580 42
实施例4 2298 583 69
实施例5 2009 591 21
实施例6 1931 598 5
实施例7 1866 586 0
对比例1 2420 611 128
对比例2 2294 589 77
对比例3 2325 562 136
实施例1-7表明，本发明的化学机械抛光液可以对钨进行高速抛光(具体地，表2 中的实施例1的钨抛光速度为2013A/min、实施例2的钨抛光速度为2029A/min、实施例3的钨抛光速度为2124A/min、实施例4的钨抛光速度为2298A/min、实施例5的钨抛光速度为2009A/min、实施例6的钨抛光速度为1931A/min、实施例7的钨抛光速度为1866A/min)，同时对氧化硅也具有中等的抛光速度(具体地，表2中的实施例1的氧化硅抛光速度为574A/min、实施例2的氧化硅抛光速度为592A/min、实施例3的氧化硅抛光速度为580A/min、实施例4的氧化硅抛光速度为583A/min、实施例5的氧化硅抛光速度为591A/min、实施例6的氧化硅抛光速度为598A/min、实施例7的氧化硅抛光速度为586A/min)，同时，可以对钨的静态腐蚀产生抑制(具体地，表2中实施例1的钨腐蚀速率为64A/min、实施例2的钨腐蚀速率为55A/min、实施例3的钨腐蚀速率为42A/min、实施例4的钨腐蚀速率为69A/min、实施例5的钨腐蚀速率为21A/min、实施例6的钨腐蚀速率为5A/min、实施例7的钨腐蚀速率为0)。对于优选的硫酸链霉素(见实施例3-7)，可以发现随着腐蚀抑制剂的量增加(具体地，从实施例4的0.005％、到实施例3的0.01％、到实施例5的0.02％、到实施例6的0.04％、再到实施例7的0.1％)，腐蚀效果也相应变好(具体地，从实施例4的腐蚀速率为69A/min、到实施例3的腐蚀速率为42A/min、到实施例5的腐蚀速率为21A/min、到实施例6的腐蚀速率为5A/min、再到实施例7的腐蚀速率为0)，在0.1％浓度的硫酸链霉素下，甚至可以完全抑制钨的静态腐蚀(实施例7中的钨腐蚀速率为0)。当然，该腐蚀抑制剂对钨抛光速度有一定影响，在一定程度上会少许抑制钨的抛光速度(见实施例4～7，随着腐蚀抑制剂的浓度的增加，对钨的静态腐蚀的速率逐渐减小，但是对钨的抛光速率也相应降低。)，但对氧化硅的抛光速度没有影响。
通过对比例1和实施例1-7对比发现，在研磨颗粒、催化剂、稳定剂、氧化剂和pH相同的基础上，加入氨基苷类抗生素后，对钨的静态腐蚀产生了明显的抑制效果(相对于对比例1的钨静态腐蚀速率为128A/min，实施例1-7的钨腐蚀速率降至为64A/min以下，甚至为0)。
通过对比例2和实施例5对比发现，虽然氨基酸(具体地，对比例2中为甘氨酸)可以在一定程度上抑制钨的腐蚀(钨腐蚀速率为77A/min)，但其效果不如硫酸链霉素(实施例5中的钨腐蚀速率为21A/min)。说明本发明提供的腐蚀抑制剂与已公开的专利相比具有优势。
通过对比例3和实施例5对比发现，具有类似于硫酸链霉素片段结构(见式一)的4-羟基环己胺(结构见式二)并没有抑制钨的静态腐蚀，这种现象可以这样解释：硫酸链霉素的胍基和胺基在酸性条件下形成带正电荷的铵盐片段，与带负电荷的钨金属表面 产生吸附，进而保护其表面不受腐蚀。
Figure PCTCN2020133605-appb-000004
通过实施例1-3可知，分别包含庆大霉素，或硫酸新霉素，或硫酸链霉素的化学机械抛光液对钨的抛光速率以及对钨金属的静态腐蚀抑制作用大小依次为：硫酸链霉素(42A/min)>硫酸新霉素(55A/min)>庆大霉素(64A/min)，而对氧化硅的抛光速率影响不明显。
应当理解的是，本发明所述％均指的是质量百分含量。
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。

Claims (24)

  1. 一种化学机械抛光液，包括：研磨颗粒、催化剂、稳定剂、同时含有胺基糖和环醇结构的腐蚀抑制剂、氧化剂、水和pH调节剂。
  2. 如权利要求1所述的化学机械抛光液，其中，所述腐蚀抑制剂由一个至五个氨基糖分子和若干非糖部分的环醇或者氨基环醇通过醚键连接而成。
  3. 如权利要求2所述的化学机械抛光液，所述腐蚀抑制剂是氨基苷类抗生素。
  4. 如权利要求3所述的化学机械抛光液，所述腐蚀抑制剂选自链霉素、卡那霉素、妥布霉素、新霉素、大观霉素、庆大霉素、西索米星、小诺米星、阿米卡星、奈替米星或其硫酸、硝酸、盐酸盐中的一种或多种。
  5. 如权利要求4所述的化学机械抛光液，所述链霉素为硫酸链霉素，所述硫酸链霉素的结构如下：
    Figure PCTCN2020133605-appb-100001
  6. 如权利要求1所述的化学机械抛光液，所述腐蚀抑制剂的浓度范围为0.005％～0.1％。
  7. 如权利要求6所述的化学机械抛光液，所述腐蚀抑制剂的浓度范围为0.005％～0.04％。
  8. 如权利要求1所述的化学机械抛光液，所述研磨颗粒为SiO 2。
  9. 如权利要求8所述的化学机械抛光液，所述研磨颗粒的浓度范围为0.5％～3％。
  10. 如权利要求9所述的化学机械抛光液，所述研磨颗粒的浓度范围为1％～3％。
  11. 如权利要求1所述的化学机械抛光液，所述催化剂为金属阳离子催化剂。
  12. 如权利要求11所述的化学机械抛光液，所述金属阳离子催化剂为九水硝酸铁。
  13. 如权利要求12所述的化学机械抛光液，所述硝酸铁的浓度范围为0.01％～0.1％。
  14. 如权利要求13所述的化学机械抛光液，所述硝酸铁的浓度范围为0.01％～0.03％。
  15. 如权利要求1所述的化学机械抛光液，所述稳定剂为有机稳定剂。
  16. 如权利要求15所述的化学机械抛光液，所述有机稳定剂为可以和铁络合的羧酸。
  17. 如权利要求16所述的化学机械抛光液，所述可以和铁络合的羧酸选自邻苯二甲酸、草酸、丙二酸、丁二酸、己二酸、柠檬酸、马来酸中的一种或多种。
  18. 如权利要求17所述的化学机械抛光液，所述可以和铁络合的羧酸为丙二酸。
  19. 如权利要求17所述的化学机械抛光液，所述丙二酸的浓度范围为0.01％～0.09％。
  20. 如权利要求19所述的化学机械抛光液，所述丙二酸的浓度范围为0.01％～0.06％。
  21. 如权利要求1所述的化学机械抛光液，所述氧化剂是H 2O 2。
  22. 如权利要求21所述的化学机械抛光液，所述氧化剂的浓度是2％。
  23. 如权利要求1所述的化学机械抛光液，所述pH调节剂是HNO 3。
  24. 如权利要求1所述的化学机械抛光液，pH值为2～4。
PCT/CN2020/133605 2019-12-20 2020-12-03 一种化学机械抛光液 WO2021121046A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227020733A KR20220120568A (ko) 2019-12-20 2020-12-03 화학적 기계적 연마액

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201911329440.0A CN113004802B (zh) 2019-12-20 2019-12-20 一种化学机械抛光液
CN201911329440.0 2019-12-20

Publications (1)

Publication Number Publication Date
WO2021121046A1 true WO2021121046A1 (zh) 2021-06-24

Family

ID=76381907

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/133605 WO2021121046A1 (zh) 2019-12-20 2020-12-03 一种化学机械抛光液

Country Status (4)

Country Link
KR (1) KR20220120568A (zh)
CN (1) CN113004802B (zh)
TW (1) TW202125611A (zh)
WO (1) WO2021121046A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108372459A (zh) * 2017-01-31 2018-08-07 罗门哈斯电子材料Cmp控股股份有限公司 钨的化学机械抛光方法
CN108372431A (zh) * 2017-01-31 2018-08-07 罗门哈斯电子材料Cmp控股股份有限公司 针对钨的化学机械抛光方法
CN109382756A (zh) * 2017-08-10 2019-02-26 罗门哈斯电子材料Cmp控股股份有限公司 钨的化学机械抛光方法
WO2019055749A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6689698B2 (en) * 2001-11-13 2004-02-10 Chartered Semiconductor Manufacturing Limited Method for etching a silicided poly using fluorine-based reactive ion etching and sodium hydroxide based solution immersion
JP2004092906A (ja) * 2002-06-28 2004-03-25 Du Pont Toray Co Ltd 繊維複合材料
JP5127316B2 (ja) * 2007-06-22 2013-01-23 旭化成ケミカルズ株式会社 化学機械研磨用組成物
JP5423669B2 (ja) * 2008-04-23 2014-02-19 日立化成株式会社 研磨剤及びこの研磨剤を用いた基板の研磨方法
US8728341B2 (en) * 2009-10-22 2014-05-20 Hitachi Chemical Company, Ltd. Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
EP2614121B1 (en) * 2010-09-08 2019-03-06 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
WO2012141111A1 (ja) * 2011-04-11 2012-10-18 旭硝子株式会社 研磨剤および研磨方法
JP2015520132A (ja) * 2012-04-24 2015-07-16 エレウス テクノロジーズ インコーポレイテッド 皮膜、被覆表面、及びその製造方法
CN105017968A (zh) * 2015-06-30 2015-11-04 安徽德诺化工有限公司 Led蓝宝石晶片高效抛光液组合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108372459A (zh) * 2017-01-31 2018-08-07 罗门哈斯电子材料Cmp控股股份有限公司 钨的化学机械抛光方法
CN108372431A (zh) * 2017-01-31 2018-08-07 罗门哈斯电子材料Cmp控股股份有限公司 针对钨的化学机械抛光方法
CN109382756A (zh) * 2017-08-10 2019-02-26 罗门哈斯电子材料Cmp控股股份有限公司 钨的化学机械抛光方法
WO2019055749A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN

Also Published As

Publication number Publication date
TW202125611A (zh) 2021-07-01
KR20220120568A (ko) 2022-08-30
CN113004802B (zh) 2024-04-12
CN113004802A (zh) 2021-06-22

Similar Documents

Publication Publication Date Title
US6217416B1 (en) Chemical mechanical polishing slurry useful for copper/tantalum substrates
US20130186850A1 (en) Slurry for cobalt applications
US20090176372A1 (en) Chemical mechanical polishing slurry and semiconductor device manufacturing method
JP2012004588A (ja) 銅基材に有益な化学機械的研磨スラリー
US9012327B2 (en) Low defect chemical mechanical polishing composition
US20070293048A1 (en) Polishing slurry
US6386950B1 (en) Process for mechanical chemical polishing of layer of aluminium or aluminium alloy conducting material
WO2017114309A1 (zh) 一种化学机械抛光液及其应用
TWI720248B (zh) 表面處理組合物與使用該組合物的表面處理方法以及半導體基板之製造方法
JPH1140526A (ja) 配線形成方法及び半導体装置の製造方法
US10633557B2 (en) Chemical mechanical polishing method for tungsten
WO2021121046A1 (zh) 一种化学机械抛光液
KR20200143144A (ko) 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법
CN114686111A (zh) 一种用于钨抛光的化学机械抛光液
US6825117B2 (en) High PH slurry for chemical mechanical polishing of copper
CN113004800B (zh) 一种化学机械抛光液
US20210246334A1 (en) Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate
CN114686107A (zh) 一种用于钨抛光的化学机械抛光液
WO2021121047A1 (zh) 一种化学机械抛光液
TW202100712A (zh) 研磨液及化學機械研磨方法
TW202127531A (zh) 化學機械拋光液及其在銅拋光中的應用
CN117965102A (zh) 一种化学机械抛光液及其用途
CN114686108A (zh) 一种用于钨抛光的化学机械抛光液
CN114686106A (zh) 一种用于钨抛光的化学机械抛光液
KR102544643B1 (ko) 연마 슬러리 조성물 및 이를 이용한 연마방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20903784

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20903784

Country of ref document: EP

Kind code of ref document: A1