WO2021098610A1 - 显示基板及其制备方法、显示装置 - Google Patents
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Abstract
Description
Claims (17)
- 一种显示基板,包括:衬底,以及设置于所述衬底上的显示区内且位于每个亚像素中的像素驱动电路与底发光型发光器件;所述发光器件包括与像素驱动电路电连接的第一电极;所述像素驱动电路包括并联的第一存储电容和第二存储电容;所述第一存储电容包括:相对设置的第一存储电极和第二存储电极;所述第一电极复用为所述第一存储电极;所述第二存储电容包括:所述第二存储电极、和与所述第二存储电极相对设置的第三存储电极;沿所述衬底厚度方向,所述第二存储电极位于第一存储电极与第三存储电极之间;所述第一存储电极与所述第三存储电极电连接;所述第一电极、所述第二存储电极和所述第三存储电极均为透明电极。
- 根据权利要求1所述的显示基板,还包括:电源线;所述像素驱动电路还包括第一晶体管,所述第一晶体管包括第一栅极、第一半导体有源图案和第一源极;所述第一晶体管为驱动晶体管;所述第一半导体有源图案包括第一沟道区、第一源极区和第一漏极区,所述第一源极区和所述第一漏极区的导电性大于所述第一沟道区的导电性;所述第一源极与所述第一源极区接触;所述第一源极与所述电源线电连接;所述第三存储电极为经过导体化处理后的半导体图案,所述第三存储电极与所述第一漏极区连接且为一体结构。
- 根据权利要求2所述的显示基板,还包括:与所述像素驱动电路电连接的栅线和数据线;以及,设置于所述每个亚像素中的第一连接电极;其中,所述像素驱动电路还包括第二晶体管,所述第二晶体管包括第二栅极、第二半导体有源图案、第二源极和第二漏极;所述栅线中的一部分复用为所述第二栅极;所述第二源极与所述数据线电连接;所述第二漏极与所述第一连接电极为一体结构;所述第一连接电极与所述第一栅极、所述第二存储电极均电连接。
- 根据权利要求3所述的显示基板,其中,所述第一连接电极与所述第二存储电极直接接触,所述第一连接电极与所述第一栅极通过过孔电连接。
- 根据权利要求3所述的显示基板,还包括:与所述像素驱动电路电连接的感测信号线;其中,所述像素驱动电路还包括第三晶体管;所述第一晶体管和所述第三晶体管分别位于所述第一存储电容的两侧;所述第三晶体管包括第三栅极、第三半导体有源图案和第三漏极;其中,所述第三半导体有源图案包括第三沟道区、第三源极区和第三漏极区,所述第三源极区和所述第三漏极区的导电性大于所述第三沟道区的导电性;所述第三源极区与所述第三存储电极连接且为一体结构;所述第三漏极与所述第三漏极区接触,且所述第三漏极与所述感测信号线电连接。
- 根据权利要求5所述的显示基板,其中,位于任一行亚像素中的所述第三晶体管的所述第三栅极,由距离所述第三晶体管最近的相邻行亚像素对应的所述栅线的一部分复用构成。
- 根据权利要求5所述的显示基板,其中,所述电源线、所述感测信号线以及所述数据线平行且同层设置;每行所述亚像素中,每相邻的两个所述亚像素为一组,每组的两个所述亚像素之间设置有两根所述数据线;每组所述亚像素的一侧设置有一根所述电源线,相对的另一侧设置有一根所述感测信号线,且所述电源线和所述感测信号线间隔设置;针对每行所述亚像素,位于所述电源线的一侧且靠近该电源线的两个所述亚像素中的所述像素驱动电路、以及位于该电源线的另一侧且靠近该电源线的两个所述亚像素中的所述像素驱动电路,均与该电源线电连接;针对每行所述亚像素,位于所述感测信号线的一侧且靠近该感测信号线的两个所述亚像素中的所述像素驱动电路、以及位于该感测信号线的另一侧且靠近该感测信号线的两个所述亚像素中的所述像素驱动电路,均与该感测信号线电连接。
- 根据权利要求7所述的显示基板,还包括:针对任一根所述电源线设置的第一辅助电极,以及针对任一根所述感测信号线设置的第二辅助电极;沿所述衬底的厚度方向,所述第一辅助电极在所述衬底上的正投影位于所述电源线在所述衬底上的正投影内;所述第一辅助电极与所述电源线通过多个第一过孔电连接;沿所述衬底的厚度方向,所述第二辅助电极在所述衬底上的正投影位于所述感测信号线在所述衬底上的正投影内;所述第二辅助电极与所述感测信号线通过多个第二过孔电连接;所述第一辅助电极、所述第二辅助电极与所述第一栅极同层同材料。
- 根据权利要求1所述的显示基板,还包括:设置于每个亚像素中所述第一存储电极与所述第二存储电极之间的滤光单元;以及,设置于所述滤光单元的靠近所述第一存储电极的一侧的平坦层。
- 根据权利要求2~9中任一项所述的显示基板,其中,所述第一晶体管为顶栅型薄膜晶体管;所述显示基板,还包括:设置于所述第一半导体有源图案的靠近所述衬底的一侧的金属图案;沿所述衬底的厚度方向,所述第一半导体有源图案在所述衬底上的正投影位于所述金属图案在所述衬底上的正投影内;所述显示基板,还包括:设置于所述每个亚像素中的第二连接电极;所述金属图案、所述第一存储电极与所述第三存储电极,三者通过第二连接电极电连接,所述第二连接电极与所述第一源极同层同材料。
- 一种显示基板的制备方法,包括:在衬底上的显示区内形成位于每个亚像素中的像素驱动电路;所述像素驱动电路包括并联的第一存储电容和第二存储电容;所述第一存储电容包括相对设置的第一存储电极和第二存储电极,所述第二存储电容包括所述第二存储电极和与所述第二存储电极相对设置的第三存储电极;其中,沿所述衬底的厚度方向,所述第二存储电极位于所述第一存储电极与所述第三存储电极之间;所述第一存储电极与所述第三存储电极电连接,且所述第一存储电极位于所述第二存储电极的远离所述衬底的一侧;所述第一存储电极、所述第二存储电极和所述第三存储电极均为透明电极;在所述衬底上的每个所述亚像素中,形成位于所述像素驱动电路的远离所述衬底一侧的底发光型发光器件;所述发光器件包括与所述像素驱动电路电连接的第一电极,所述第一电极由所述第一存储电极复用构成。
- 根据权利要求11所述的显示基板的制备方法,其中,所述像素驱动电路还包括第一晶体管,所述第一晶体管为驱动晶体管;所述第一晶体管包括第一栅极、第一半导体有源图案、第一源极;所述第一半导体有源图案包括第一沟道区、第一源极区和第一漏极区,所述第一源极区和所述第一漏极区的导电性大于所述第一沟道区的导 电性;所述第一源极与所述第一源极区接触;形成所述像素驱动电路,还包括:在形成所述第一半导体有源图案的过程中,同步形成所述第三存储电极,使得所述第三存储电极与所述第一漏极区连接且为一体结构。
- 根据权利要求12所述的显示基板的制备方法,其中,所述显示基板还包括:与所述像素驱动电路电连接的栅线和数据线,以及设置于所述每个亚像素中的第一连接电极;所述像素驱动电路还包括第二晶体管,所述第二晶体管包括第二栅极、第二半导体有源图案、第二源极和第二漏极;所述第二半导体有源图案包括第二沟道区、第二源极区和第二漏极区,所述第二源极区和所述第二漏极区的导电性大于所述第二沟道区的导电性;所述第二源极与所述第二源极区接触,所述第二漏极与所述第二漏极区接触;其中,所述栅线中的一部分复用为所述第二栅极;所述显示基板的制备方法,还包括:同步形成所述栅线和所述第一栅极;其中,所述第二源极与所述数据线电连接;所述第二漏极与所述第一连接电极电连接,且二者为一体结构;所述第一连接电极还与所述第一栅极、所述第二存储电极均电连接;所述显示基板的制备方法,还包括:同步形成所述第二半导体有源图案与所述第一半导体有源图案;同步形成所述第一连接电极、所述第二源极、所述第二漏极、所述数据线以及所述第一源极。
- 根据权利要求13所述的显示基板的制备方法,其中,所述显示基板还包括与所述像素驱动电路电连接的电源线和感测信号线;所述第一源极与所述电源线电连接;所述像素驱动电路还包括第三晶体管,所述第三晶体管包括第三栅极、第三半导体有源图案和第三漏极;所述第三半导体有源图案包括第三沟道区、第三源极区和第三漏极区,所述第三源极区和所述第三漏极区的导电性大于所述第三沟道区的导电性;所述第三源极区与所述第三存储电极连接且为一体结构;所述第三漏极与所述第三漏极区接触,且所述第三漏极与所述感测信号线电连接;所述第一晶体管和所述第三晶体管分别位于所述第一存储电容的两侧;位于任一行亚像素中的所述第三晶体管的所述第三栅极,由距离所述第三晶体管最近的相邻行亚像素对应的所述栅线的一部分复用构成;所述显示基板的制备方法,还包括:同步形成所述第三半导体有源图案与所述第二半导体有源图案;同步形成所述第三漏极、所述电源线、所述感测信号线与所述数据线。
- 根据权利要求13所述的显示基板的制备方法,还包括:在形成所述像素驱动电路之前,在所述衬底上形成金属图案,以使得在形成所述像素驱动电路之后,沿所述衬底的厚度方向,所述第一半导体有源图案在所述衬底上的正投影位于所述金属图案在所述衬底上的正投影内。
- 根据权利要求15所述的显示基板的制备方法,其中,所述显示基板还包括:设置于所述每个亚像素中的第二连接电极;所述显示基板的制备方法,还包括:在形成所述第一源极的过程中,同步形成所述第二连接电极,使得所述第二连接电极与所述金属图案、所述第一存储电极和所述第三存储电极均电连接。
- 一种显示装置,包括如权利要求1-10中任一项所述的显示基板。
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