WO2021098289A1 - 掩膜版、蒸镀系统及掩膜版的制备方法 - Google Patents

掩膜版、蒸镀系统及掩膜版的制备方法 Download PDF

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Publication number
WO2021098289A1
WO2021098289A1 PCT/CN2020/107946 CN2020107946W WO2021098289A1 WO 2021098289 A1 WO2021098289 A1 WO 2021098289A1 CN 2020107946 W CN2020107946 W CN 2020107946W WO 2021098289 A1 WO2021098289 A1 WO 2021098289A1
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WO
WIPO (PCT)
Prior art keywords
etching
opening
mask
magnetic plate
substrate
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PCT/CN2020/107946
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English (en)
French (fr)
Inventor
韩冰
李伟丽
刘明星
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昆山国显光电有限公司
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Application filed by 昆山国显光电有限公司 filed Critical 昆山国显光电有限公司
Publication of WO2021098289A1 publication Critical patent/WO2021098289A1/zh
Priority to US17/546,384 priority Critical patent/US20220098719A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • This application relates to the field of display technology, in particular to a mask plate, an evaporation system and a method for preparing the mask plate.
  • the main technical problem solved by this application is to provide a mask, an evaporation system, and a preparation method of the mask, which can make the mask and the surface of the substrate to be evaporated more closely adhere.
  • a technical solution adopted in this application is to provide a mask, including: a magnetic plate body provided with a plurality of openings; A limiter is arranged on the periphery, wherein the thickness and width of the limiter are set so that the limiter itself can bend toward the substrate to be evaporated under the action of the magnetic field generator.
  • the limiting body in the thickness direction of the magnetic plate body, includes a first main surface and a second main surface that are opposed to each other, and the first main surface is provided with a first surface and a second surface connected to each other.
  • the second surface is close to the opening relative to the first surface, and after the stopper is bent toward the substrate to be vaporized, the second surface is also used to adhere to the surface of the substrate to be vaporized Together.
  • the structure design of the above-mentioned limiter is simple, and the process is easy to implement; in the bending process of the limiter, on the one hand, due to the small weight of the limiter, it is easier to bend under the action of the magnetic field generator; On the one hand, due to the existence of the first surface, the first surface can accommodate the bending deformation of the limiting body during the bending process, and release the stress after the bending deformation.
  • the height difference between the lowest point and the highest point of the first surface is smaller than the width of the first surface.
  • the first surface includes a curved surface.
  • the above-mentioned arc surface design can make the first surface bend more easily under the magnetic force of the magnetic field generator and release the stress after bending deformation.
  • the second surface is a flat surface; or, the second surface is an arc surface, and the arc of the second surface is smaller than the arc of the first surface.
  • the second main surface is provided with a third surface and a fourth surface connected to each other, and the fourth surface is close to the opening relative to the third surface.
  • the structural design of the above-mentioned limiting body is simple, and the process is easy to realize;
  • the above-mentioned design of the third surface and the fourth surface on the second main surface can make the limiting body located around the opening have a lower weight. It is light and prevents the mask from failing to fit the surface of the substrate to be evaporated under the action of the magnetic field generator; on the other hand, the design of the third and fourth surfaces on the second main surface can reduce bending stress , So that the limiting body can be bent more easily.
  • the third surface includes a curved surface.
  • the design of the arc surface can make the third surface bend more easily under the magnetic force of the magnetic field generator.
  • the first end of the third surface furthest from the opening is flush with the second end of the first surface furthest from the opening, or, The first end is close to the opening relative to the second end; and/or, in a direction perpendicular to the first main surface, the third end of the third surface closest to the opening and the first One side is flush with the fourth end closest to the opening, or the third end is far away from the opening relative to the fourth end.
  • the arc of the third surface is greater than the arc of the first surface.
  • the mask further includes a frame, and two ends of the plurality of magnetic plate bodies are fixedly arranged on the frame.
  • an evaporation system including: the mask and the magnetic field generator described in any of the above embodiments, and the magnetic field generator is used for adsorbing
  • the mask is such that the limiting body itself can be bent toward the substrate to be evaporated under the action of the magnetic field generator.
  • another technical solution adopted by the present application is to provide a method for preparing a mask, including: providing a magnetic plate body including a first main surface and a second main surface that are arranged opposite to each other. Surface; using an etching solution to form a plurality of openings on the magnetic plate body and a stopper located at the periphery of the opening, wherein the thickness and width of the stopper are set such that the stopper itself It can be bent to the substrate to be evaporated under the action of the magnetic field generator.
  • the first main surface is provided with a first surface and a second surface connected to each other, and the second surface is close to the opening relative to the first surface;
  • the two main surfaces are provided with a third surface and a fourth surface connected to each other, and the fourth surface is close to the opening relative to the third surface; wherein the fourth surface includes the first surface, the second surface, and the The magnetic plate bodies on the third surface and the fourth surface form the limiting body.
  • the formation of a plurality of openings on the magnetic plate body by etching with an etchant and a limiter located at the periphery of the openings includes: forming a first main surface by etching with an etchant on the first main surface.
  • An etching area, a second etching area is formed on the second main surface at a position corresponding to the first etching area by etching with an etching solution, and the first etching area and the second etching area are connected, so The connecting portion of the first etching area and the second etching area forms an opening, the remaining first etching area forms the second surface, and the remaining second etching area forms the fourth surface;
  • the first surface is formed on one side of the second surface by etching with an etching solution, and the first surface is connected to the second surface; and one side of the fourth surface is formed by etching with an etching solution
  • the third surface, the third surface and the fourth surface are connected, and the first surface and the third surface are not through.
  • the formation of a plurality of openings on the magnetic plate body by etching with an etchant and a limiter located at the periphery of the openings includes: forming mutual etching on the first main surface by etching with an etchant.
  • the first etching area and the first surface are connected; the second etching area and the third surface connected to each other are formed on the second main surface by etching with an etching solution; wherein, the first etching area Correspond to the position of the second etching area and communicate with each other to form the opening, the remaining first etching area forms the second surface, and the remaining second etching area forms the fourth surface
  • the position of the first surface and the third surface correspond, and the first surface and the third surface are not through.
  • the magnetic plate of the mask provided by the present application is provided with a plurality of openings, and a limiter is arranged on the periphery of the opening, and the thickness and width of the limiter are set so that the limiter itself can Under the action of the magnetic field generator, it is bent toward the substrate to be evaporated. Under the action of the magnetic field generator, the bent limiting body can be more closely attached to the substrate to be evaporated, reducing the gap between the limiting body and the substrate to be evaporated, reducing the shadow effect of evaporation, and It is helpful for the display panel to realize a narrow frame.
  • FIG. 1 is a schematic diagram of the structure of a mask and a substrate to be evaporated
  • FIG. 2 is a schematic structural diagram of an embodiment of the mask plate and the substrate to be vapor-deposited according to the present application;
  • FIG. 3 is a schematic structural view of an embodiment of bonding the mask plate and the substrate to be vapor-deposited in FIG. 2;
  • FIG. 3 is a schematic structural view of an embodiment of bonding the mask plate and the substrate to be vapor-deposited in FIG. 2;
  • Fig. 4 is a schematic structural diagram of an embodiment of an evaporation system according to the present application.
  • the mask for vapor deposition is generally formed by double-sided etching.
  • the mask is attached to the surface of the substrate to be vaporized, there is a gap between the opening position and the surface of the substrate to be vaporized. The gap will cause the shadow effect of vapor deposition to be more obvious, and affect the realization of the narrow frame of the display panel.
  • the preparation process of a mask 10 includes: providing a mask base, the mask base including a first main surface 102 and a second main surface 104 disposed oppositely;
  • the first main surface 102 is etched with an etching solution to form a first etching area (not labeled).
  • a second etching area (not labeled) is formed by etching with an etching solution at a position of the second main surface 104 corresponding to the first etching area.
  • the first etching area and the second etching area are connected to form an opening 100 of the mask 10.
  • the mask and the evaporation system provided by the present application can make the mask and the surface of the substrate to be evaporated more closely adhere.
  • the mask 20 includes a magnetic plate body 200.
  • the material of the magnetic plate body 200 may be metal or the like.
  • a plurality of openings 202 are provided on the magnetic plate body 200.
  • the magnetic plate body 200 is provided with a limiter 204 on the periphery of the opening 202.
  • the thickness and width of the limiting body 204 are set such that the limiting body 204 itself can be bent toward the substrate 22 to be evaporated under the action of the magnetic field generator. The structure after bending is shown in Figure 3.
  • the bent limiter 204 can be more closely attached to the substrate 22 to be evaporated under the action of the magnetic field generator, which reduces the gap between the limiter 204 and the substrate 22 to be evaporated, and reduces the evaporation shadow Effect, which is conducive to achieving a narrow frame of the display panel.
  • the openings 202 provided on the magnetic plate body 200 can be symmetrically arranged with respect to the central axis of the opening 202, and the limiting bodies 204 located on both sides of the opening 202 can also be arranged symmetrically with respect to the central axis.
  • the above-mentioned design method can make the structure of the mask 20 relatively simple and easy to implement in process.
  • the opening 202 and the limiting bodies 204 located on both sides of the opening 202 can also be arranged asymmetrically, which is not limited in this application.
  • the above-mentioned mask 20 may also include a frame (not shown), and the two ends of a plurality of magnetic plates 200 may be fixed on the frame, so that one mask 20 can be used for vapor deposition. A plurality of areas on the substrate 22 are simultaneously vapor-deposited.
  • the stop body 204 in the thickness direction of the magnetic plate body 200, includes a first main surface 2000 and a second main surface 2002 that are arranged oppositely, wherein the first main surface 2000 is provided with The first surface 2004 and the second surface 2006 are connected to each other, and the second surface 2006 is close to the opening 202 relative to the first surface 2004.
  • the second surface 2006 can be formed during the formation of the opening 202.
  • the above-mentioned second surface 2006 being formed during the formation of the opening 202 means that the second surface 2006 is adjacent to the opening 202 or directly forms a part of the opening 202.
  • the structural design of the above-mentioned limiting body 204 is simple, and the process is easy to implement. During the bending process of the limiting body 204, on the one hand, due to the small weight of the limiting body 204, it is easier to bend under the action of the magnetic field generator; on the other hand, due to the existence of the first surface 2004, the first surface 2004 One side 2004 can accommodate the bending deformation of the limiting body 204 during the bending process, and release the stress after the bending deformation.
  • the width of the limiting body 204 is a point on the first surface 2004 that is farthest from the opening 202 and a point on the magnetic plate 200 that is closest to the opening 202 in the direction along the first surface 2004 of the magnetic plate 200 to the opening 202. length.
  • the height difference d1 between the lowest point and the highest point of the first surface 2004 is smaller than the width d2 of the first surface 2004.
  • the first surface 2004 may be a regular or irregular arc surface.
  • the width d2 refers to the length of a point closest to the opening 202 and a point farthest from the opening 202 on the first surface 2004 in the direction from the first surface 2004 of the magnetic plate 200 to the opening 202.
  • the above-mentioned first surface 2004 includes a curved surface.
  • the arc surface can be a partial arc surface on a regular sphere, or a partial arc surface on a regular ellipsoid.
  • the arc surface may also be a partial arc surface on an irregular curved body, which is not limited in this application.
  • the above-mentioned arc surface design can make the first surface 2004 easier to bend under the magnetic force of the magnetic field generator, and release the stress after bending deformation.
  • the above-mentioned first surface 2004 may all be arc surfaces.
  • the structure of the first surface 2004 may also be other.
  • the area of the first surface 2004 that is prone to bend is designed as a curved surface, and the other areas are designed as flat surfaces. It may be located at the middle position of the first surface 2004, etc.; for another example, the first surface 2004 is all flat.
  • the second surface 2006 is a plane, and the angle ⁇ 1 between the plane and the surface of the substrate 22 to be vaporized may be an acute angle, for example, 30°, 45°, and so on.
  • This design method can make the second surface 2006 adhere closer to the surface of the substrate 22 to be vaporized after bending, thereby further reducing the shadow effect of vapor deposition.
  • the second surface 2006 may also be a curved surface, and the curvature of the second surface 2006 is smaller than the curvature of the first surface 2004. This design method can also make the second surface 2006 adhere closer to the surface of the substrate 22 to be vaporized after bending, thereby further reducing the shadow effect of vapor deposition.
  • the second main surface 2002 of the limiting body 204 is provided with a third surface 2008 and a fourth surface 2001 that are connected to each other, and the fourth surface 2001 is close to the third surface 2008 Opening 202.
  • the fourth surface 2001 may be formed during the formation of the opening 202.
  • the fourth surface 2001 being formed during the formation of the opening 202 means that the fourth surface 2001 is adjacent to the opening 202 or directly forms a part of the opening 202.
  • the structural design of the above-mentioned limiting body 204 is simple, and the process is easy to implement.
  • the above-mentioned design of the third surface 2008 and the fourth surface 2001 on the second main surface 2002 can make the weight of the limiting body 204 located around the opening 202 lighter and prevent the mask from being masked under the action of the magnetic field generator.
  • the plate 20 cannot be attached to the surface of the substrate 22 to be vapor-deposited.
  • the design of the third surface 2008 and the fourth surface 2001 on the second main surface 2002 can alleviate the bending stress, so that the limiting body 204 can be bent more easily.
  • the third surface 2008 includes a curved surface.
  • the arc surface can be a partial arc surface on a regular sphere, or a partial arc surface on a regular ellipsoid.
  • the arc surface may also be a partial arc surface on an irregular curved body, which is not limited in this application.
  • the above-mentioned arc surface design can make the third surface 2008 bend more easily under the magnetic force of the magnetic field generator.
  • the arc of the third surface 2008 is greater than the arc of the first surface 2004.
  • the third surface 2008 may all be arc surfaces; of course, in other embodiments, the structure of the third surface 2008 may also be other.
  • the area prone to bending of the third surface 2008 is designed to be a curved surface, and other areas are designed to be flat. The area prone to bending may be the same as the location of the first surface 2004 that is prone to bending.
  • the third surface 2008 is all flat.
  • the fourth surface 2001 may be a plane, and the angle ⁇ 2 between the plane and the surface of the substrate 22 to be evaporated may be an obtuse angle, for example, 120°, 135°, and so on.
  • the specific included angle ⁇ 2 can be set according to the vapor deposition angle of the vapor deposition device during vapor deposition, which is not limited in this application.
  • the first end A of the third surface 2008 furthest from the opening 202 is flush with the second end B of the first surface 2004 furthest from the opening 202.
  • the first end A is close to the opening 202 relative to the second end B.
  • This design method can make the entire limiting body 204 bend more easily under the magnetic force of the magnetic field generator.
  • the third end C of the third surface 2008 closest to the opening 202 is flush with the fourth end D of the first surface 2004 closest to the opening 202.
  • the third end C is farther away from the opening 202 than the fourth end D.
  • first main surface 2000 and/or the second main surface 2002 of the limiting body 204 may also include other surfaces.
  • the other surfaces may be spaced apart from the first surface 2004 or the third surface 2008, or may be connected to the first surface 2004 or the third surface 2008.
  • the structure of the other surfaces may be all arc surfaces or partial arc surfaces, etc., which is not limited in this application.
  • FIG. 4 is a schematic structural diagram of an embodiment of an evaporation system according to the present application.
  • the evaporation system 30 includes: the mask 300 and the magnetic field generator 302 in any of the above embodiments.
  • the magnetic field generator 302 is used for adsorbing the mask 300 so that the limiter 3000 itself can bend toward the substrate 304 to be evaporated under the action of the magnetic field generator 302.
  • the magnetic field generator 302 may be an electromagnetic plate or the like.
  • the magnetic field generator 302 and the mask 300 are located on opposite sides of the substrate 304 to be evaporated.
  • the magnetic field generator 302 makes the second surface 3002 of the limiter 3000 of the mask 300 and The surface of the substrate 304 to be vaporized is adhered more closely, the gap between the stopper 3000 and the substrate 304 to be vaporized is reduced, and the shadow effect of vapor deposition is reduced, thereby facilitating the realization of a narrow frame of the display panel.
  • the evaporation system 30 may further include an evaporation device (not shown) for providing materials to be evaporated.
  • the evaporation device may be located on the side of the mask 300 away from the substrate 304 to be evaporated.
  • the mask provided by the present application will be further described below from the perspective of the preparation method in conjunction with FIG. 2.
  • the method for preparing the mask provided in this application includes:
  • the magnetic plate body 200 includes a first main surface 2000 and a second main surface 2002 that are oppositely disposed.
  • the first main surface 2000 may be an entire plane
  • the second main surface 2002 may be an entire plane.
  • a plurality of openings 202 and a stopper 204 located on the periphery of the opening 202 are formed on the magnetic plate body 200 by etching with an etchant.
  • the thickness and width of the stopper 204 are set such that the stopper 204 itself
  • the magnetic field generator is bent toward the substrate 22 to be evaporated.
  • the first main surface 2000 is provided with a first surface 2004 and a second surface 2006 that are connected to each other.
  • the second surface 2006 is close to the opening 202 relative to the first surface 2004.
  • the second main surface 2002 is provided with a third surface 2008 and a fourth surface 2001 that are connected to each other.
  • the fourth surface 2001 is close to the opening 202 relative to the third surface 2008.
  • the magnetic plate 200 including the first surface 2004, the second surface 2006, the third surface 2008, and the fourth surface 2001 forms a limiter 204.
  • the foregoing process of forming the opening 202 and the stopper 204 by etching with an etchant may be:
  • a first etching area (not shown) is formed on the first main surface 2000 by etching with an etching solution.
  • a second etching area (not shown) is formed on the second main surface 2002 at a position corresponding to the first etching area by etching with an etching solution. And the first etching area and the second etching area are connected, the connecting part of the first etching area and the second etching area forms an opening 202, the remaining first etching area forms the second surface 2006, and the remaining second etching area forms the fourth surface 2001.
  • a first surface 2004 is formed on one side of the second surface 2006 by etching with an etching solution, and the first surface 2004 is connected to the second surface 2006.
  • a third surface 2008 is formed on one side of the fourth surface 2001 by etching with an etching solution, and the third surface 2008 and the fourth surface 2001 are connected. And the first surface 2004 and the third surface 2008 are not connected.
  • the above-mentioned process of forming the opening 202 and the stopper 204 by etching with an etchant may be:
  • the magnetic substrate includes a first main surface 2000 and a second main surface 2002 opposite to each other.
  • the first main surface 2000 can be a whole plane
  • the second main surface 2002 can be a whole flat.
  • a first etching area (not shown) and a first surface 2004 connected to each other are formed by etching with an etching solution.
  • the second main surface 2002 is etched with an etching solution to form a second etching area and a third surface 2008 that are connected to each other.
  • the positions of the first etching area and the second etching area correspond, and the first etching area and the second etching area are connected to form an opening 202.
  • the remaining first etching area forms the second surface 2006, and the remaining second etching area
  • the fourth surface 2001 is formed.
  • the positions of the first surface 2004 and the third surface 2008 correspond to each other, and the first surface 2004 and the third surface 2008 are not through.

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Abstract

本申请提供了一种掩膜版、蒸镀系统及掩膜版的制备方法，所述掩膜版包括：磁性板体，所述磁性板体上设置有多个开口；所述磁性板体在所述开口的外围设置有限位体，其中所述限位体的厚度和宽度设置成使得所述限位体自身能够在磁场发生器的作用下向待蒸镀基板弯折。通过上述方式，本申请能够使掩膜版与待蒸镀基板表面贴合更为紧密。

Description

掩膜版、蒸镀系统及掩膜版的制备方法 技术领域
本申请涉及显示技术领域，特别是涉及一种掩膜版、蒸镀系统及掩膜版的制备方法。
背景技术
现有技术中，在制备显示面板时，一般需要借助于掩膜版的开口，利用蒸镀的方式将待蒸镀材料蒸镀到预定位置上。
目前蒸镀用掩膜版与待蒸镀基板表面存在贴合不紧密的问题。
发明内容
本申请主要解决的技术问题是提供一种掩膜版、蒸镀系统及掩膜版的制备方法，能够使掩膜版与待蒸镀基板表面贴合更为紧密。
为解决上述技术问题，本申请采用的一个技术方案是：提供一种掩膜版，包括：磁性板体，所述磁性板体上设置有多个开口；所述磁性板体在所述开口的外围设置有限位体，其中所述限位体的厚度和宽度设置成使得所述限位体自身能够在磁场发生器的作用下向待蒸镀基板弯折。
其中，在所述磁性板体厚度方向上，所述限位体包括相对设置的第一主表面和第二主表面，所述第一主表面上设置有相互连接的第一面和第二面，所述第二面相对所述第一面靠近所述开口，所述限位体向所述待蒸镀基板弯折后，所述第二面还用于与所述待蒸镀基板表面贴合。上述限位体的结构设计简单，且工艺易于实现；在限位体弯折过程中，一方面，由于限位体的重量小，其在磁场发生器的作用下较为容易地发生弯折；另一方面，由于第一面的存在，第一面可以容纳限位体在弯折过程中的弯折变形，释放弯折变形后的应力。
其中，在所述磁性板体厚度方向上，所述第一面的最低点与最高点的高度差小于所述第一面的宽度。上述尺寸设置方式可以使得第一面在磁场发生器的磁性作用力下较为容易地发生弯折。
其中，所述第一面包括弧面。上述弧面的设计方式可以使得第一面在磁场发生器的磁性作用力下较为容易地发生弯折，并释放弯折变形后的应力。
其中，所述第二面为平面；或者，所述第二面为弧面，且所述第二面的弧度小于所述第一面的弧度。该设计方式可以使得弯折后第二面与待蒸镀基板的 表面贴合较为紧密，从而进一步降低蒸镀阴影效应。
其中，所述第二主表面上设置有相互连接的第三面和第四面，所述第四面相对所述第三面靠近所述开口。一方面，上述限位体的结构设计简单，且工艺易于实现；另一方面，上述位于第二主表面上的第三面和第四面的设计可以使得位于开口周围的限位体的重量较轻，防止在磁场发生器的作用下掩膜版与待蒸镀基板的表面无法贴合；再一方面，上述位于第二主表面上的第三面和第四面的设计可以减缓弯折应力，使得限位体能够较为容易地发生弯折。
其中，所述第三面包括弧面。上述弧面的设计方式可以使得第三面在磁场发生器的磁性作用力下较为容易地发生弯折。
其中，在垂直于所述第一主表面方向上，所述第三面距离所述开口最远的第一端与所述第一面距离所述开口最远的第二端齐平，或者，所述第一端相对所述第二端靠近所述开口；和/或，在垂直于所述第一主表面方向上，所述第三面距离所述开口最近的第三端与所述第一面距离所述开口最近的第四端齐平，或者，所述第三端相对所述第四端远离所述开口。该设计方式可以使得整个限位体在磁场发生器的磁性作用力下较为容易地发生弯折。
其中，所述第三面的弧度大于所述第一面的弧度。该设计方式可以使得掩膜版较为容易地发生弯折。
其中，所述掩膜版还包括框架，多个所述磁性板体的两端固定设置于所述框架上。
为解决上述技术问题，本申请采用的另一技术方案是：提供一种蒸镀系统，包括：上述任一实施例中所述的掩膜版以及磁场发生器，所述磁场发生器用于吸附所述掩膜版以使得所述限位体自身能够在所述磁场发生器的作用下向待蒸镀基板弯折。
为解决上述技术问题，本申请采用的另一个技术方案是：提供一种掩膜版的制备方法，包括：提供磁性板体，所述磁性板体包括相对设置的第一主表面和第二主表面；利用蚀刻液蚀刻的方式在所述磁性板体上形成多个开口以及位于所述开口外围的限位体，其中，所述限位体的厚度和宽度设置成使得所述限位体自身能够在磁场发生器的作用下向待蒸镀基板弯折。
其中，在所述磁性板体厚度方向上，所述第一主表面设置有相互连接的第一面和第二面，所述第二面相对所述第一面靠近所述开口；所述第二主表面上设置有相互连接的第三面和第四面，所述第四面相对所述第三面靠近所述开口； 其中，包含所述第一面、所述第二面、所述第三面和所述第四面的所述磁性板体形成所述限位体。
其中，所述利用蚀刻液蚀刻的方式在所述磁性板体上形成多个开口以及位于所述开口外围的限位体，包括：在所述第一主表面上采用蚀刻液蚀刻的方式形成第一蚀刻区，在所述第二主表面上对应所述第一蚀刻区的位置采用蚀刻液蚀刻的方式形成第二蚀刻区，且所述第一蚀刻区和所述第二蚀刻区连通，所述第一蚀刻区和所述第二蚀刻区连通的部分形成开口，剩余的所述第一蚀刻区形成所述第二面，剩余的所述第二蚀刻区形成所述第四面；在所述第二面的一侧利用蚀刻液蚀刻的方式形成所述第一面，所述第一面与所述第二面相连接；以及在所述第四面的一侧利用蚀刻液蚀刻的方式形成所述第三面，所述第三面与所述第四面相连接，且所述第一面与所述第三面非贯通。
其中，所述利用蚀刻液蚀刻的方式在所述磁性板体上形成多个开口以及位于所述开口外围的限位体，包括：在所述第一主表面上采用蚀刻液蚀刻的方式形成相互连接的第一蚀刻区和所述第一面；在所述第二主表面上采用蚀刻液蚀刻的方式形成相互连接的第二蚀刻区和所述第三面；其中，所述第一蚀刻区和所述第二蚀刻区的位置相对应且相互连通，以形成所述开口，剩余的所述第一蚀刻区形成所述第二面，剩余的所述第二蚀刻区形成所述第四面；所述第一面和所述第三面的位置相对应，且所述第一面和所述第三面非贯通。
本申请的有益效果是：本申请所提供的掩膜版的磁性板体上设置有多个开口，且开口的外围设置有限位体，限位体的厚度和宽度设置成使得限位体自身能够在磁场发生器的作用下向待蒸镀基板弯折。弯折后的限位体在磁场发生器的作用下能够与待蒸镀基板之间贴合更为紧密，降低限位体与待蒸镀基板之间的间隙，降低蒸镀阴影效应，从而有利于显示面板实现窄边框。
【附图说明】
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1为一种掩膜版和待蒸镀基板的结构示意图；
图2为本申请掩膜版和待蒸镀基板一实施方式的结构示意图；
图3为图2中掩膜版与待蒸镀基板贴合一实施方式的结构示意图；
图4为本申请蒸镀系统一实施方式的结构示意图。
【具体实施方式】
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，均属于本申请保护的范围。
目前蒸镀用掩膜版一般采用双面蚀刻方式形成。在掩膜版与待蒸镀基板表面贴合时，开口位置与待蒸镀基板表面之间存在缝隙，该缝隙会导致蒸镀阴影效应较为明显，影响显示面板窄边框的实现。
请参阅图1，一种掩膜版10(例如，CMM通用掩膜版)的制备过程包括：提供掩膜基体，掩膜基体包括相对设置的第一主表面102和第二主表面104；在第一主表面102利用蚀刻液蚀刻的方式形成第一蚀刻区(未标示)。在第二主表面104对应第一蚀刻区的位置利用蚀刻液蚀刻的方式形成第二蚀刻区(未标示)。第一蚀刻区和第二蚀刻区连通以形成掩膜版10的开口100。上述掩膜版10与待蒸镀基板12表面贴合时，由于采用蚀刻液蚀刻方式形成，开口100周边与待蒸镀基板12表面之间不可避免存在缝隙(图未示)，该缝隙会导致蒸镀阴影效应较为明显，影响显示面板窄边框的实现。
基于此，本申请提供的掩膜版及蒸镀系统，能够使掩膜版与待蒸镀基板表面贴合更为紧密。
请参阅图2-图3，该掩膜版20包括磁性板体200。磁性板体200的材质可以为金属等。磁性板体200上设置有多个开口202。磁性板体200在开口202的外围设置有限位体204。其中，限位体204的厚度和宽度设置成使得限位体204自身能够在磁场发生器的作用下向待蒸镀基板22弯折。弯折后的结构如图3所示。弯折后的限位体204在磁场发生器的作用下能够与待蒸镀基板22之间贴合更为紧密，降低限位体204与待蒸镀基板22之间的间隙，降低蒸镀阴影效应，从而有利于实现显示面板窄边框。优选地，上述磁性板体200上设置的开口202可以关于开口202的中心轴线相互对称设置，位于开口202两侧的限位体204也可关于该中心轴线相互对称设置。上述设计方式可以使得掩膜版20的结构较为简单，且工艺上易于实现。当然，在其他实施例中，开口202以及位于开口 202两侧的限位体204也可非对称设置，本申请对此不作限定。
当然，在其他实施例中，上述掩膜版20还可包括框架(图未示)，多个磁性板体200的两端可以固定在框架上，从而可以使得一个掩膜版20可以对待蒸镀基板22上的多个区域同时进行蒸镀。
在一个实施方式中，如图2所示，在磁性板体200厚度方向上，限位体204包括相对设置的第一主表面2000和第二主表面2002，其中第一主表面2000上设置有相互连接的第一面2004和第二面2006，且第二面2006相对第一面2004靠近开口202。例如，第二面2006可以在开口202形成过程中形成，限位体204向待蒸镀基板22弯折后，第二面2006还用于与待蒸镀基板22的表面贴合(如图3所示)。其中，上述第二面2006在开口202形成过程中形成是指，第二面2006与开口202相邻或者直接构成开口202的一部分。上述限位体204的结构设计简单，且工艺易于实现。在限位体204弯折过程中，一方面，由于限位体204的重量小，其在磁场发生器的作用下较为容易地发生弯折；另一方面，由于第一面2004的存在，第一面2004可以容纳限位体204在弯折过程中的弯折变形，释放弯折变形后的应力。
限位体204的宽度为第一面2004上距离开口202最远的一个点和磁性板体200上距离开口202最近的一个点在沿磁性板体200的第一面2004到开口202的方向上的长度。
在一个应用场景中，如图2所示，在磁性板体200厚度方向上，第一面2004的最低点与最高点的高度差d1小于第一面2004的宽度d2。在本实施例中，第一面2004可以为规则或者不规则弧面。此处宽度d2是指第一面2004上距离开口202最近的一个点与距离开口202最远的一个点在沿磁性板体200的第一面2004到开口202的方向上的长度。上述尺寸设置方式可以使得第一面2004在磁场发生器的磁性作用力下较为容易地发生弯折。
在又一个应用场景中，上述第一面2004包括弧面。该弧面可以为规则的球体上的部分弧面，也可以为规则的椭球体上的部分弧面。当然，在其他实施例中，该弧面也可为非规则的曲面体上的部分弧面，本申请对此不作限定。上述弧面的设计方式可以使得第一面2004在磁场发生器的磁性作用力下较为容易地发生弯折，并释放弯折变形后的应力。
在本实施例中，上述第一面2004可以全部为弧面。当然，在其他实施例中，上述第一面2004的结构也可为其他，例如，第一面2004易于发生弯折的区域 设计为弧面，其他区域设计为平面，该易于发生弯折的区域可以位于第一面2004的中间位置处等；又例如，第一面2004均为平面。
进一步，此时第二面2006为平面，该平面与待蒸镀基板22的表面之间的夹角α1可以为锐角，例如，30°、45°等。该设计方式可以使得弯折后第二面2006与待蒸镀基板22的表面贴合较为紧密，从而进一步降低蒸镀阴影效应。当然，在其他实施例中，上述第二面2006也可为弧面，且第二面2006的弧度小于第一面2004的弧度。该设计方式同样可以使得弯折后第二面2006与待蒸镀基板22的表面贴合较为紧密，从而进一步降低蒸镀阴影效应。
在又一个实施方式中，请再次参阅图2，限位体204的第二主表面2002上设置有相互连接的第三面2008和第四面2001，且第四面2001相对第三面2008靠近开口202。例如，第四面2001可以在开口202形成过程中形成。其中，上述第四面2001在开口202形成过程中形成是指，第四面2001与开口202相邻或者直接构成开口202的一部分。一方面，上述限位体204的结构设计简单，且工艺易于实现。另一方面，上述位于第二主表面2002上的第三面2008和第四面2001的设计可以使得位于开口202周围的限位体204的重量较轻，防止在磁场发生器的作用下掩膜版20与待蒸镀基板22的表面无法贴合。再一方面，上述位于第二主表面2002上的第三面2008和第四面2001的设计可以减缓弯折应力，使得限位体204能够较为容易地发生弯折。在一个应用场景中，如图2所示，第三面2008包括弧面。该弧面可以为规则的球体上的部分弧面，也可以为规则的椭球体上的部分弧面。当然，在其他实施例中，该弧面也可为非规则的曲面体上的部分弧面，本申请对此不作限定。上述弧面的设计方式可以使得第三面2008在磁场发生器的磁性作用力下较为容易地发生弯折。
进一步，当第一面2004和第三面2008均为弧面时，第三面2008的弧度大于第一面2004的弧度。该设计方式可以使得整个限位体204在磁场发生器的磁性作用力下较为容易地发生弯折。
在本实施例中，第三面2008可以全部为弧面；当然，在其他实施例中，上述第三面2008的结构也可为其他。例如，第三面2008易于发生弯折的区域设计为弧面，其他区域设计为平面，该易于发生弯折的区域可以与第一面2004易于发生弯折的位置相同。又例如，第三面2008均为平面。
进一步，此时第四面2001可以为平面，该平面与待蒸镀基板22的表面之间的夹角α2可以为钝角，例如，120°、135°等。该具体夹角α2可以根据蒸 镀时蒸镀装置的蒸镀角度进行设定，本申请对此不作限定。
优选地，在垂直于第一主表面2000方向上，第三面2008距离开口202最远的第一端A与第一面2004距离开口202最远的第二端B齐平。或者，第一端A相对第二端B靠近开口202。该设计方式可以使得整个限位体204在磁场发生器的磁性作用力下较为容易地发生弯折。和/或，在垂直于第一主表面2000方向上，第三面2008距离开口202最近的第三端C与第一面2004距离开口202最近的第四端D齐平。或者，第三端C相对第四端D远离开口202。该设计方式同样可以使得整个限位体204在磁场发生器的磁性作用力下较为容易地发生弯折。当然，在其他实施例中，限位体204的第一主表面2000和/或第二主表面2002上还可包括其他面。其他面可以与第一面2004或第三面2008间隔设置，也可以与第一面2004或第三面2008相互连接设置。其他面的结构可以全部为弧面或者部分弧面等，本申请对此不作限定。
请参阅图4，图4为本申请蒸镀系统一实施方式的结构示意图。该蒸镀系统30包括：上述任一实施例中的掩膜版300以及磁场发生器302。磁场发生器302用于吸附掩膜版300以使得限位体3000自身能够在磁场发生器302的作用下向待蒸镀基板304弯折。在本实施例中，磁场发生器302可以为电磁板等。在蒸镀过程中，磁场发生器302和掩膜版300位于待蒸镀基板304的相对两侧，通过磁场发生器302的作用使得掩膜版300的限位体3000中的第二面3002与待蒸镀基板304的表面贴合更为紧密，降低限位体3000与待蒸镀基板304之间的间隙，降低蒸镀阴影效应，从而有利于实现显示面板窄边框。
进一步，在本实施例中，该蒸镀系统30还可包括蒸镀装置(图未示)，用于提供待蒸镀材料。在实际蒸镀过程中，蒸镀装置可以位于掩膜版300远离待蒸镀基板304一侧。
下面结合图2从制备方法的角度对本申请所提供的掩膜版作进一步说明。本申请所提供的掩膜版的制备方法包括：
首先，提供一整个磁性板体200，磁性板体200包括相对设置的第一主表面2000和第二主表面2002。此时该第一主表面2000可以为一整个平面，第二主表面2002可以为一整个平面。
接着，利用蚀刻液蚀刻的方式在磁性板体200上形成多个开口202以及位于开口202外围的限位体204，其中，限位体204的厚度和宽度设置成使得限位体204自身能够在磁场发生器的作用下向待蒸镀基板22弯折。
在本实施例中，经过上述蚀刻液蚀刻后，在磁性板体200厚度方向上，第一主表面2000上设置有相互连接的第一面2004和第二面2006。第二面2006相对第一面2004靠近开口202。第二主表面2002上设置有相互连接的第三面2008和第四面2001。第四面2001相对第三面2008靠近开口202。其中，包含第一面2004、第二面2006、第三面2008和第四面2001的磁性板体200形成限位体204。
在一个应用场景中，上述利用蚀刻液蚀刻的方式形成开口202和限位体204的过程可以为：
A、在第一主表面2000上采用蚀刻液蚀刻的方式形成第一蚀刻区(图未示)。在第二主表面2002上对应第一蚀刻区的位置采用蚀刻液蚀刻的方式形成第二蚀刻区(图未示)。且第一蚀刻区和第二蚀刻区连通，第一蚀刻区和第二蚀刻区连通的部分形成开口202，剩余的第一蚀刻区形成第二面2006，剩余的第二蚀刻区形成第四面2001。
B、在第二面2006的一侧利用蚀刻液蚀刻的方式形成第一面2004，第一面2004与第二面2006相连接。在第四面2001的一侧利用蚀刻液蚀刻的方式形成第三面2008，第三面2008与第四面2001相连接。且第一面2004与第三面2008非贯通。
在又一个应用场景中，上述利用蚀刻液蚀刻的方式形成开口202和限位体204的过程可以为：
A、提供一整个磁性基体，磁性基体包括相对设置的第一主表面2000和第二主表面2002，且此时该第一主表面2000可以为一整个平面，第二主表面2002可以为一整个平面。
B、在第一主表面2000上采用蚀刻液蚀刻的方式形成相互连接的第一蚀刻区(图未示)和第一面2004。
C、在第二主表面2002上采用蚀刻液蚀刻的方式形成相互连接的第二蚀刻区和第三面2008。其中，第一蚀刻区和第二蚀刻区的位置相对应，第一蚀刻区和第二蚀刻区连通，以形成开口202.剩余的第一蚀刻区形成第二面2006，剩余的第二蚀刻区形成第四面2001.第一面2004和第三面2008的位置相对应，且第一面2004和第三面2008非贯通。
从上述制备方法可以看出，制备本申请所提供的掩膜版20的工艺过程较为简单，且易于实现。
以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (17)

  1. 一种掩膜版，包括：
    磁性板体，所述磁性板体上设置有多个开口；
    所述磁性板体在所述开口的外围设置有限位体，其中所述限位体的厚度和宽度设置成使得所述限位体自身能够在磁场发生器的作用下向待蒸镀基板弯折。
  2. 根据权利要求1所述的掩膜版，其中，
    在所述磁性板体厚度方向上，所述限位体包括相对设置的第一主表面和第二主表面，所述第一主表面上设置有相互连接的第一面和第二面，所述第二面相对所述第一面靠近所述开口，所述限位体向所述待蒸镀基板弯折后，所述第二面还用于与所述待蒸镀基板表面贴合。
  3. 根据权利要求2所述的掩膜版，其中，
    在所述磁性板体厚度方向上，所述第一面的最低点与最高点的高度差小于所述第一面的宽度。
  4. 根据权利要求2所述的掩膜版，其中，
    所述第一面包括弧面。
  5. 根据权利要求4所述的掩膜版，其中，
    所述第二面为平面。
  6. 根据权利要求4所述的掩膜版，其中，
    所述第二面为弧面，且所述第二面的弧度小于所述第一面的弧度。
  7. 根据权利要求4所述的掩膜版，其中，
    所述第二主表面上设置有相互连接的第三面和第四面，所述第四面相对所述第三面靠近所述开口。
  8. 根据权利要求7所述的掩膜版，其中，
    所述第三面包括弧面。
  9. 根据权利要求8所述的掩膜版，其中，
    在垂直于所述第一主表面方向上，所述第三面距离所述开口最远的第一端与所述第一面距离所述开口最远的第二端齐平，或者，所述第一端相对所述第二端靠近所述开口。
  10. 根据权利要求8所述的掩膜版，其中，
    在垂直于所述第一主表面方向上，所述第三面距离所述开口最近的第三端 与所述第一面距离所述开口最近的第四端齐平，或者，所述第三端相对所述第四端远离所述开口。
  11. 根据权利要求8所述的掩膜版，其中，
    所述第三面的弧度大于所述第一面的弧度。
  12. 根据权利要求1所述的掩膜版，其中，
    所述掩膜版还包括框架，多个所述磁性板体的两端固定设置于所述框架上。
  13. 一种蒸镀系统，包括：
    权利要求1-12任一项所述的掩膜版以及磁场发生器，所述磁场发生器用于吸附所述掩膜版以使得所述限位体自身能够在所述磁场发生器的作用下向待蒸镀基板弯折。
  14. 一种掩膜版的制备方法，包括：
    提供磁性板体，所述磁性板体包括相对设置的第一主表面和第二主表面；
    利用蚀刻液蚀刻的方式在所述磁性板体上形成多个开口以及位于所述开口外围的限位体，其中，所述限位体的厚度和宽度设置成使得所述限位体自身能够在磁场发生器的作用下向待蒸镀基板弯折。
  15. 根据权利要求14所述的制备方法，其中，
    经所述蚀刻液蚀刻后，在所述磁性板体厚度方向上，所述第一主表面设置有相互连接的第一面和第二面，所述第二面相对所述第一面靠近所述开口；所述第二主表面上设置有相互连接的第三面和第四面，所述第四面相对所述第三面靠近所述开口；其中，包含所述第一面、所述第二面、所述第三面和所述第四面的所述磁性板体形成所述限位体。
  16. 根据权利要求15所述的制备方法，其中，所述利用蚀刻液蚀刻的方式在所述磁性板体上形成多个开口以及位于所述开口外围的限位体，包括：
    在所述第一主表面上采用蚀刻液蚀刻的方式形成第一蚀刻区，在所述第二主表面上对应所述第一蚀刻区的位置采用蚀刻液蚀刻的方式形成第二蚀刻区，且所述第一蚀刻区和所述第二蚀刻区连通的部分形成开口，剩余的所述第一蚀刻区形成所述第二面，剩余的所述第二蚀刻区形成所述第四面；
    在所述第二面的一侧利用蚀刻液蚀刻的方式形成所述第一面，所述第一面与所述第二面相连接；以及在所述第四面的一侧利用蚀刻液蚀刻的方式形成所述第三面，所述第三面与所述第四面相连接，且所述第一面与所述第三面非贯通。
  17. 根据权利要求15所述的制备方法，其中，所述利用蚀刻液蚀刻的方式在所述磁性板体上形成多个开口以及位于所述开口外围的限位体，包括：
    在所述第一主表面上采用蚀刻液蚀刻的方式形成相互连接的第一蚀刻区和所述第一面；
    在所述第二主表面上采用蚀刻液蚀刻的方式形成相互连接的第二蚀刻区和所述第三面；其中，所述第一蚀刻区和所述第二蚀刻区的位置相对应且相互连通，以形成所述开口，剩余的所述第一蚀刻区形成所述第二面，剩余的所述第二蚀刻区形成所述第四面；所述第一面和所述第三面的位置相对应，且所述第一面和所述第三面非贯通。
PCT/CN2020/107946 2019-11-21 2020-08-07 掩膜版、蒸镀系统及掩膜版的制备方法 WO2021098289A1 (zh)

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