WO2021035950A1 - 一种柔性衬底基板、柔性显示面板及其制备方法 - Google Patents

一种柔性衬底基板、柔性显示面板及其制备方法 Download PDF

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Publication number
WO2021035950A1
WO2021035950A1 PCT/CN2019/115711 CN2019115711W WO2021035950A1 WO 2021035950 A1 WO2021035950 A1 WO 2021035950A1 CN 2019115711 W CN2019115711 W CN 2019115711W WO 2021035950 A1 WO2021035950 A1 WO 2021035950A1
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Prior art keywords
layer
water
polyimide
panel
polyimide layer
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PCT/CN2019/115711
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English (en)
French (fr)
Inventor
张福阳
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武汉华星光电半导体显示技术有限公司
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Priority to US16/639,747 priority Critical patent/US11145832B2/en
Publication of WO2021035950A1 publication Critical patent/WO2021035950A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This application relates to the field of display technology, and in particular to a flexible substrate, a flexible display panel and a preparation method thereof.
  • flexible displays are gradually entering the consumer electronics market such as mobile devices and televisions.
  • flexible displays use flexible substrates, such as flexible resin, flexible metal, ultra-thin glass, and so on.
  • flexible resins are widely used in flexible display substrates due to their good shaping and high surface flatness.
  • resin materials are more susceptible to oxygen (O2), water (H2O), etc. The reliability of the panel is affected.
  • FIGS. 1A-1B Please refer to FIGS. 1A-1B, where FIG. 1A is a schematic diagram of the structure of the existing flexible display panel before cutting, and FIG. 1B is a schematic diagram of the structure of the existing flexible display panel after cutting.
  • the existing flexible display panel before cutting includes a cutting line (Laser Cut line) 12 (cutting knife 19 cuts longitudinally along the cutting line 12) divides a panel area 11 and a panel edge area 13.
  • the panel area 11 includes a first polyimide layer 101a, a water and oxygen barrier layer 102, a second polyimide layer 101b, and a second polyimide layer that are sequentially stacked on top of each other.
  • the side edge close to one end of the cutting line 12 and partially covers the second polyimide layer 101b; the panel edge area 13 includes a first polyimide layer 101a and a water and oxygen barrier layer 102 stacked in sequence , A second polyimide layer 101b.
  • the water and oxygen barrier layer 102 is used to block water/oxygen permeation from below the second polyimide layer 101b.
  • the water and oxygen barrier layer 102 blocks the penetration of water/oxygen from below the second polyimide layer 101b, the water/oxygen will approach the original along the second polyimide layer 101b.
  • the side edge of one end of the cutting line 12 penetrates (the penetration path shown by the arrow 18 in FIG. 1B), and then penetrates into the circuit of the thin film transistor array layer 103, and affects the service life of the light-emitting material of the organic light-emitting layer 104.
  • the purpose of this application is to provide a flexible base substrate, a flexible display panel and a preparation method thereof in view of the problems existing in the prior art, which can block the damage to the reliability of the panel caused by the intrusion of water and oxygen, and improve the performance of the flexible display panel. reliability.
  • the present application provides a flexible base substrate having a panel area and a panel edge area divided by a cutting line;
  • the flexible base substrate includes: a first polyimide layer formed In the panel area and the panel edge area; a water and oxygen barrier layer covering the first polyimide layer; a protective layer, arranged on the panel area on the water and oxygen barrier layer, and close to In the cutting line, the material of the protective layer includes at least one of silicon oxide, silicon nitride, or amorphous silicon, and the thickness of the protective layer is 0.1-5 ⁇ m; and a second polyimide layer , Covering the protective layer and the water and oxygen barrier layer.
  • the present application also provides a flexible display panel, including a panel area, the panel area includes a display area and a non-display area; the flexible display panel includes: a flexible substrate, the The flexible base substrate includes a first polyimide layer formed in the display area and the non-display area, a water and oxygen barrier layer covering the first polyimide layer, and a water and oxygen barrier layer disposed on the water A protective layer on the oxygen barrier layer and corresponding to the non-display area, and a second polyimide layer covering the protective layer and the water and oxygen barrier layer; and sequentially stacked on the flexible base substrate And corresponds to a thin film transistor array layer and an encapsulation layer in the display area.
  • the encapsulation layer simultaneously covers the side of the thin film transistor array layer near one end of the non-display area, and partially covers the second polyamide Imine layer.
  • the present application also provides a method for manufacturing a flexible display panel, including the following steps: providing a rigid substrate having a panel area and a panel edge area divided by a cutting line, The panel area includes a display area and a non-display area, the non-display area is close to the cutting line; a first polyimide layer is prepared on the hard substrate, the first polyimide The layer is formed in the panel area and the panel edge area; a water and oxygen barrier layer is deposited on the first polyimide layer, and the water and oxygen barrier layer covers the first polyimide layer; A protective layer is prepared on the water and oxygen barrier layer corresponding to the non-display area, and the protective layer is close to the cutting line; a second polyimide layer is prepared on the protective layer and the water and oxygen barrier layer ; On the second polyimide layer corresponding to the display area is sequentially prepared a thin film transistor array layer and an encapsulation layer, the encapsulation layer at the same time covering the thin film transistor array layer near the end of the
  • the present application prepares a composite base structure composed of a first polyimide layer, a water and oxygen barrier layer, a protective layer and a second polyimide layer, so that the prepared flexible display panel has good water and oxygen barrier properties, which is very To a large extent, the probability of water and oxygen passing through the flexible substrate is reduced, and the service life of the flexible display panel is increased; it has good flexibility and is beneficial for wide application.
  • FIG. 1A is a schematic diagram of the structure of the existing flexible display panel before cutting
  • FIG. 1B is a schematic diagram of the structure of the existing flexible display panel after cutting
  • FIG. 2 is a schematic structural diagram of an embodiment of a flexible substrate of the present application
  • FIG. 3 is a schematic flow chart of the method for preparing a flexible display panel according to the present application.
  • FIG. 5 is a schematic diagram of the layered structure of an embodiment of the flexible display panel of the present application.
  • the “above” or “below” of the first feature on the second feature may include the first and second features in direct contact, or may include the first and second features. Not in direct contact but through other features between them.
  • “above”, “above” and “above” the first feature include the first feature directly above and obliquely above the second feature, or it simply means that the first feature is higher in level than the second feature.
  • the first feature is "below”, “below” and “below” the second feature, including the first feature directly below and obliquely below the second feature, or it simply means that the first feature has a lower level than the second feature.
  • FIG. 2 is a schematic structural diagram of an embodiment of a flexible base substrate of the present application.
  • the flexible substrate includes a cutting line (Laser Cut line 22 (cutting knife 29 cuts longitudinally along the cutting line 22) divides a panel area 21 and a panel edge area 23.
  • the panel area 21 includes a first polyimide layer 201a, a water and oxygen barrier layer 202, a protective layer 203, and a second polyimide layer 201b stacked in sequence;
  • the region 23 includes a first polyimide layer 201a, a water and oxygen barrier layer 202, and a second polyimide layer 201b stacked in sequence.
  • the first polyimide layer 201 a is formed in the panel area 21 and the panel edge area 23.
  • the material of the first polyimide layer 201a is polyimide resin or modified polyimide resin.
  • the thickness of the first polyimide layer 201a is 5-15 ⁇ m, preferably 10 ⁇ m.
  • the water and oxygen barrier layer 202 covers the first polyimide layer 201 a, that is, the water and oxygen barrier layer 202 corresponds to the panel area 21 and the panel edge area 23.
  • the material of the water and oxygen barrier layer 202 is silicon oxide (SiOx) or silicon nitride (SiNx).
  • the thickness of the water and oxygen barrier layer 202 is 0.2-1 ⁇ m, preferably 0.5 ⁇ m.
  • the water and oxygen barrier layer 202 is used to block the penetration of water and oxygen into the second polyimide layer 201b, so as to prevent water, oxygen, etc. from invading the components prepared on the flexible substrate (such as the circuit of the thin film transistor array layer). The damage caused by the luminescent material of the luminescent layer and the luminescent material lamp) improves the reliability of the flexible display panel using the flexible substrate of the present application.
  • the protective layer 203 is disposed on the panel region 21 on the water and oxygen barrier layer 202 and is close to the cutting line 22, that is, the protective layer 203 corresponds to the panel region 21 and is close to the ⁇ 22 ⁇ Cutting line 22.
  • the material of the protection layer 203 includes at least one of silicon oxide (SiOx), silicon nitride (SiNx), or amorphous silicon ( ⁇ -Si).
  • the thickness of the protective layer 203 is 0.1-5 ⁇ m, preferably 0.5 ⁇ m or 1 ⁇ m or 2 ⁇ m.
  • the protective layer 203 is arranged close to the cutting line 22, the penetration of water and oxygen into the second polyimide layer 201b from the side close to the cutting line 22 can be extended
  • the path enables the flexible base substrate to have a better ability to block water and oxygen, and further improves the reliability of the flexible display panel using the flexible base substrate of the present application.
  • the second polyimide layer 201b covers the protective layer 203 and the water and oxygen barrier layer 202, that is, the second polyimide layer 201b corresponds to the panel area 21 and the panel edge area 23.
  • the material of the second polyimide layer 202a is polyimide resin or modified polyimide resin.
  • the thickness of the second polyimide layer 202a is 5-15 ⁇ m, preferably 10 ⁇ m.
  • the thickness of the first polyimide layer 201a and the second polyimide layer 201b may be different, and the specific thickness may be selected according to the actual device type.
  • the flexible base substrate of this embodiment adopts a composite base structure composed of a first polyimide layer 201a, a water and oxygen barrier layer 202, a protective layer 203, and a second polyimide layer 201b.
  • the flexible substrate substrate of this embodiment has the following characteristics: it has good water and oxygen barrier properties, and greatly reduces water and The probability of oxygen passing through the flexible substrate can protect the thin film transistor array layer and the light-emitting layer prepared thereon, and improve the service life of the flexible display panel; it has good flexibility and can be widely used in the preparation of flexible display panels.
  • FIG. 3 is a schematic flow chart of the method for preparing a flexible display panel of the present application.
  • the preparation method of the present application includes the following steps: S31: providing a hard substrate; S32: preparing a first polyimide layer on the hard substrate; S33: depositing a first polyimide layer on the first polyimide layer Water and oxygen barrier layer; S34: prepare a protective layer on the water and oxygen barrier layer corresponding to the non-display area of the flexible display panel; S35: prepare a second polymer on the protective layer and the water and oxygen barrier layer S36: prepare a thin film transistor array layer and an encapsulation layer on the second polyimide layer corresponding to the display area of the flexible display panel in sequence; and S37: separate the hard substrate from the The first polyimide layer and the edge area of the panel are cut along the cutting line to obtain a flexible display panel.
  • S31 providing a hard substrate
  • S32 preparing a first polyimide layer on the hard substrate
  • S33 depositing a first polyimide
  • the rigid substrate has a panel area and a panel edge area divided by a cutting line, the panel area includes a display area and a non-display area, and the non-display area is close to the cutting line. line.
  • the hard substrate may be a glass substrate, silicon wafer, metal or hard film, and the hard substrate needs to have a high laser transmittance to facilitate the subsequent laser lift-off process.
  • the first polyimide layer covers the panel area and the panel edge area.
  • the material of the first polyimide layer is polyimide resin or modified polyimide resin.
  • the thickness of the first polyimide layer is 5-15 ⁇ m, preferably 10 ⁇ m.
  • the water and oxygen barrier layer covers the first polyimide layer, that is, the water and oxygen barrier layer corresponds to the panel area and the panel edge area.
  • the material of the water and oxygen barrier layer is silicon oxide (SiOx) or silicon nitride (SiNx).
  • the thickness of the water and oxygen barrier layer is 0.2-1 ⁇ m, preferably 0.5 ⁇ m.
  • the water and oxygen barrier layer is used to block the penetration of water and oxygen into the second polyimide layer prepared subsequently, so as to prevent water, oxygen, etc. from invading the panel display components (such as thin film transistor arrays) prepared on the flexible substrate.
  • the damage caused by the circuit of the layer and the light-emitting material of the light-emitting layer, etc. improves the reliability of the flexible display panel using the flexible base substrate of the present application.
  • the protective layer corresponds to the panel area and is close to the cutting line.
  • the material of the protective layer includes at least one of silicon oxide (SiOx), silicon nitride (SiNx), or amorphous silicon ( ⁇ -Si).
  • the thickness of the protective layer is 0.1-5 ⁇ m, preferably 0.5 ⁇ m or 1 ⁇ m or 2 ⁇ m.
  • the base substrate has a better ability to block water and oxygen, and further improves the reliability of the flexible display panel using the flexible base substrate of the present application.
  • S35 preparing a second polyimide layer on the protective layer and the water and oxygen barrier layer.
  • the second polyimide layer covers the protective layer and the water and oxygen barrier layer, that is, the second polyimide layer corresponds to the panel area and the panel edge area.
  • the material of the second polyimide layer is polyimide resin or modified polyimide resin.
  • the thickness of the second polyimide layer is 5-15 ⁇ m, preferably 10 ⁇ m.
  • the thickness of the first polyimide layer and the second polyimide layer can be different, and the specific thickness can be selected according to the actual device type.
  • S36 sequentially preparing a thin film transistor array layer and an encapsulation layer on the second polyimide layer corresponding to the display area of the flexible display panel.
  • the thin film transistor array layer includes a stacked gate insulating layer (GI), a dielectric layer (OLD), and functional components distributed inside.
  • the functional components include a polysilicon layer, a gate electrode ( GE), source/drain electrode (S/D).
  • the thin film transistor array layer has a conventional technical structure, and the materials used and the thickness of each film layer can be adjusted according to requirements, which is not specifically limited in this application.
  • the encapsulation layer covers the upper surface of the thin film transistor array layer, and at the same time covers the side edge of the thin film transistor array layer near one end of the non-display area, and partially covers the second polyamide layer. Imine layer.
  • the encapsulation layer has a conventional technical structure, and the material and thickness used can be adjusted according to requirements.
  • a light-emitting layer is prepared on the thin film transistor array layer, and the light-emitting layer is an OLED (Organic Light Emitting Diode (Organic Light Emitting Diode) light emitting layer, that is, the flexible display panel prepared in the present application is an OLED flexible display panel.
  • the encapsulation layer is prepared on the light-emitting layer, and simultaneously covers the thin film transistor array layer and the side of the light-emitting layer near one end of the non-display area, and partially covers the second polyimide layer .
  • the OLED light-emitting layer includes an anode, an OLED light-emitting material layer, and a cathode that are stacked.
  • the OLED light-emitting layer has a conventional technical structure, and the materials used and the thickness of each film layer can be adjusted according to requirements, which is not specifically limited in this application.
  • QD Quantum Dot (quantum dot)-OLED flexible display panel and other flexible display panels with light emitting methods.
  • a laser lift-off process is used to separate the hard substrate from the first polyimide layer, and a laser is used to cut the edge area of the panel along the cutting line to obtain a flexible display panel.
  • the laser lift-off process and the laser cutting process can be operated according to conventional processes in the field, and this application does not make any special restrictions.
  • the method for preparing a new type of flexible display panel proposed in this application is to prepare a composite base structure composed of a first polyimide layer, a water and oxygen barrier layer, a protective layer, and a second polyimide layer.
  • the flexible display panel has good water and oxygen barrier properties, which greatly reduces the probability of water and oxygen passing through the flexible substrate, and improves the service life of the flexible display panel; it has good flexibility and is beneficial for wide application.
  • FIG. 4A-FIG. 4F are the preparation flow chart of an embodiment of the flexible display panel of the present application
  • FIG. 5 is the layer of an embodiment of the flexible display panel of the present application. Schematic diagram of the structure.
  • FIG. 4A is a cross-sectional view of a rigid substrate provided by an embodiment of the application.
  • the hard substrate 400 has a panel area 41 and a panel edge area 43 divided by a cutting line 42.
  • the panel area 41 includes a display area 411 and a non-display area 412.
  • the non-display area 412 Close to the cutting line 42.
  • the hard substrate 400 may be a glass substrate, a silicon wafer, a metal, or a hard film, and the hard substrate needs to have a high laser transmittance in order to facilitate the subsequent laser lift-off process.
  • step S32 preparing a first polyimide layer on the rigid substrate, please refer to FIG. 3 and FIG. 4B together, where FIG. 4B is the first polyimide layer prepared on the rigid substrate according to an embodiment of the application.
  • FIG. 4B is the first polyimide layer prepared on the rigid substrate according to an embodiment of the application.
  • the first polyimide layer 401a covers the panel area 41 and the panel edge area 43.
  • the material of the first polyimide layer 401a is polyimide resin or modified polyimide resin.
  • the thickness of the first polyimide layer 401a is 5-15 ⁇ m, preferably 10 ⁇ m.
  • step S33 depositing a water and oxygen barrier layer on the first polyimide layer, please refer to FIG. 3 and FIG. 4C together, in which FIG. 4C is the first polyimide layer provided by an embodiment of the application.
  • FIG. 4C is the first polyimide layer provided by an embodiment of the application.
  • the water and oxygen barrier layer 402 covers the first polyimide layer 401 a, that is, the water and oxygen barrier layer 202 corresponds to the panel area 21 and the panel edge area 23.
  • the material of the water and oxygen barrier layer 402 is silicon oxide (SiOx) or silicon nitride (SiNx).
  • the thickness of the water and oxygen barrier layer 402 is 0.2-1 ⁇ m, preferably 0.5 ⁇ m.
  • the water and oxygen barrier layer 402 is used to block the penetration of water and oxygen into the second polyimide layer 401b prepared subsequently, so as to prevent water, oxygen, etc. from intruding on the panel display assembly (such as film) prepared on the flexible substrate.
  • the damage caused by the circuit of the transistor array layer and the light-emitting material of the light-emitting layer, etc.) improves the reliability of the flexible display panel using the flexible substrate of the present application.
  • step S34 preparing a protective layer on the water and oxygen barrier layer corresponding to the non-display area of the flexible display panel, please refer to FIG. 3 and FIG. A cross-sectional view of the protective layer prepared on the oxygen barrier layer.
  • the protective layer 403 corresponds to the panel area 21 and is close to the cutting line 42.
  • the material of the protective layer 403 includes silicon oxide (SiOx), silicon nitride (SiNx) or amorphous silicon (amorphous silicon). silicon, abbreviated as ⁇ -Si).
  • the thickness of the protective layer 403 is 0.1-5 ⁇ m, preferably 0.5 ⁇ m or 1 ⁇ m or 2 ⁇ m.
  • the protective layer 403 is provided close to the cutting line 42, which can extend the penetration of water and oxygen into the second polyimide layer 401b from the side close to the cutting line 42.
  • the path enables the flexible base substrate to have a better ability to block water and oxygen, and further improves the reliability of the flexible display panel using the flexible base substrate of the present application.
  • step S35 preparing a second polyimide layer on the protective layer and the water and oxygen barrier layer, please refer to FIG. 3 and FIG. 4E together, where FIG. 4E is a protection layer provided by an embodiment of the application.
  • FIG. 4E is a protection layer provided by an embodiment of the application.
  • the second polyimide layer 401b covers the protective layer 403 and the water and oxygen barrier layer 402, that is, the second polyimide layer 201b corresponds to the panel area 21 and the panel edge area twenty three.
  • the material of the second polyimide layer 401b is polyimide resin or modified polyimide resin.
  • the thickness of the second polyimide layer 401b is 5-15 ⁇ m, preferably 10 ⁇ m.
  • the thickness of the first polyimide layer 401a and the second polyimide layer 401b may be different, and the specific thickness may be selected according to the actual device type.
  • step S36 a thin film transistor array layer and an encapsulation layer are sequentially prepared on the second polyimide layer corresponding to the display area of the flexible display panel.
  • FIG. 3 and FIG. 4F where FIG. 4F is A cross-sectional view of a flexible display panel before cutting provided by an embodiment of the present application.
  • the lower position of the cutting knife 49 (which may be a laser cutting knife) corresponds to the cutting line 42.
  • a light-emitting layer 405 is formed on the thin-film transistor array layer 404, and the encapsulation layer 406 is formed on the light-emitting layer 405, and simultaneously covers the thin-film transistor array layer 404 and the light-emitting layer. 405 is close to the side of one end of the non-display area 412 and partially covers the second polyimide layer 401b.
  • the light-emitting layer 405 is an OLED light-emitting layer, that is, an OLED flexible display panel is prepared.
  • QD (Quantum Dot, quantum dot)-OLED flexible display panels and other flexible display panels with other light emitting modes can also be prepared according to requirements.
  • the packaging layer 406 is directly prepared on the thin film transistor array layer 404 as required, covering the upper surface of the thin film transistor array layer 404, and at the same time covering the end of the thin film transistor array layer 404 close to the non-display area 412 Side, and partially cover the second polyimide layer 401b.
  • the thin film transistor array layer 404 includes a stacked gate insulating layer (GI), a dielectric layer (OLD), and functional components distributed inside.
  • the functional components include a polysilicon layer and a gate electrode. (GE), source/drain electrode (S/D).
  • the thin film transistor array layer 404 has a conventional technical structure, and the materials used and the thickness of each film layer can be adjusted according to requirements, and this application does not make special restrictions.
  • the encapsulation layer 406 is a conventional technical structure, and the material and thickness used can be adjusted according to requirements, which is not specifically limited in this application.
  • the OLED light-emitting layer includes an anode, an OLED light-emitting material layer, and a cathode that are stacked.
  • the OLED light-emitting layer has a conventional technical structure, and the materials used and the thickness of each film layer can be adjusted according to requirements, which is not specifically limited in this application.
  • FIG. 5 is a schematic diagram of a layered structure of an embodiment of a flexible display panel of the present application.
  • a laser lift-off process is used to separate the rigid substrate 400 from the first polyimide layer 401a, and a laser is used to remove the panel edge region 43 along the cutting line 42 to obtain a flexible display panel.
  • the laser lift-off process and the laser cutting process can be operated according to conventional processes in the field, and this application does not make any special restrictions.
  • the protective layer 403 is provided close to the cutting line 42, which can extend the penetration of water and oxygen into the second polyimide layer 401b from the side close to the cutting line 42
  • the path (the permeation path shown by arrow 58 in FIG. 5) enables the flexible substrate to have a better ability to block water and oxygen, and further improves the reliability of the flexible display panel using the flexible substrate of the present application.
  • the present application also provides a flexible display panel.
  • the flexible display panel includes a panel area 41, and the panel area 41 includes a display area 411 and a non-display area 412.
  • the flexible display panel further includes: a flexible base substrate including a first polyimide layer 401a formed in the display area 411 and the non-display area 412, and a first polyimide layer 401a covering the display area 411 and the non-display area 412;
  • the encapsulation layer 406 covers the light-emitting layer 405, and at the same time covers the thin film transistor array layer 404 and the side of the light-emitting layer 405 near one end of the non-display area 412, and partially covers the second poly Imide layer 401b.
  • the material of the first polyimide layer 401a is polyimide resin or modified polyimide resin.
  • the thickness of the first polyimide layer 401a is 5-15 ⁇ m, preferably 10 ⁇ m.
  • the material of the water and oxygen barrier layer 402 is silicon oxide (SiOx) or silicon nitride (SiNx).
  • the thickness of the water and oxygen barrier layer 402 is 0.2-1 ⁇ m, preferably 0.5 ⁇ m.
  • the water and oxygen barrier layer 402 is used to block the penetration of water and oxygen into the second polyimide layer 401b prepared subsequently, so as to prevent water, oxygen, etc. from intruding on the panel display assembly (such as film) prepared on the flexible substrate.
  • the damage caused by the circuit of the transistor array layer and the light-emitting material of the light-emitting layer, etc.) improves the reliability of the flexible display panel using the flexible substrate of the present application.
  • the material of the protective layer 403 includes silicon oxide (SiOx), silicon nitride (SiNx) or amorphous silicon (amorphous silicon). silicon, abbreviated as ⁇ -Si).
  • the thickness of the protective layer 403 is 0.1-5 ⁇ m, preferably 0.5 ⁇ m or 1 ⁇ m or 2 ⁇ m.
  • the protective layer 403 is provided close to the cutting line 42, which can extend the penetration of water and oxygen into the second polyimide layer 401b from the side close to the cutting line 42
  • the path (the permeation path shown by the arrow in FIG. 5) enables the flexible base substrate to have a better ability to block water and oxygen, and further improves the reliability of the flexible display panel using the flexible base substrate of the present application.
  • the material of the second polyimide layer 401b is polyimide resin or modified polyimide resin.
  • the thickness of the second polyimide layer 401b is 5-15 ⁇ m, preferably 10 ⁇ m.
  • the thickness of the first polyimide layer 401a and the second polyimide layer 401b may be different, and the specific thickness may be selected according to the actual device type.
  • the thin film transistor array layer 404 includes a stacked gate insulating layer (GI), a dielectric layer (OLD), and functional components distributed inside.
  • the functional components include a polysilicon layer and a gate electrode. (GE), source/drain electrode (S/D).
  • the thin film transistor array layer 404 has a conventional technical structure, and the materials used and the thickness of each film layer can be adjusted according to requirements, and this application does not make special restrictions.
  • the light-emitting layer 405 is an OLED light-emitting layer, that is, the flexible display panel of the present application is an OLED flexible display panel.
  • the OLED light-emitting layer includes an anode, an OLED light-emitting material layer, and a cathode that are stacked.
  • the OLED light-emitting layer has a conventional technical structure, and the materials used and the thickness of each film layer can be adjusted according to requirements, which is not specifically limited in this application.
  • LCD Liquid Crystal Display, liquid crystal display panel
  • other flexible display panels with other light-emitting modes can also be prepared as required.
  • the encapsulation layer 406 is directly prepared on the thin film transistor array layer 404 as required, Covers the upper surface of the thin film transistor array layer 404, and at the same time covers the side of the thin film transistor array layer 404 near one end of the non-display area 412, and partially covers the second polyimide layer 401b.
  • the encapsulation layer 406 is a conventional technical structure, and the material and thickness used can be adjusted according to requirements, and this application does not make any special limitation.
  • the flexible display panel of the present application prepares a composite base structure composed of a first polyimide layer, a water and oxygen barrier layer, a protective layer and a second polyimide layer, so that the prepared flexible display panel has good water and oxygen
  • the barrier performance greatly reduces the probability of water and oxygen passing through the flexible substrate, and improves the service life of the flexible display panel; it has good flexibility and is conducive to wide application.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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Abstract

本申请揭露一种柔性衬底基板、柔性显示面板及其制备方法，通过制备由第一聚酰亚胺层、水氧阻隔层、保护层和第二聚酰亚胺层组成的复合基底结构，使得制备的柔性显示面板具有良好的水和氧气阻隔性能，很大程度上降低水和氧气透过柔性衬底基板的概率，提高柔性显示面板的使用寿命。

Description

一种柔性衬底基板、柔性显示面板及其制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种柔性衬底基板、柔性显示面板及其制备方法。
 背景技术
随着显示技术的发展，对色彩和轻便度要求越来越高，显示面板柔性化已经是现代显示器件发展的大势所趋，柔性显示器正在逐渐走进移动设备、电视机等消费电子市场。和传统的显示器技术采用刚性基板不同，柔性显示器采用的是柔性基板，如柔性树脂、柔性金属、超薄玻璃等等。这其中柔性树脂由于其塑形好、表面平整度高等特点被广泛用于柔性显示器的基板，但是和金属、玻璃相比，树脂材料的容易受到氧气(O2)、水(H2O)等入侵，使面板的信赖性受到影响。
 技术问题
请参阅图1A-图1B，其中，图1A为切割前的现有柔性显示面板结构示意图，图1B为切割后的现有柔性显示面板结构示意图。
如图1A所示，切割前的现有柔性显示面板上包括被一切割线(Laser Cut line)12(切割刀19沿切割线12纵向切割)划分的一面板区11和一面板边缘区13。所述面板区11包括依次层叠设置的一第一聚酰亚胺层101a、一水氧阻隔层102、一第二聚酰亚胺层101b、以及依次设置于所述第二聚酰亚胺层101b上的一薄膜晶体管(TFT)阵列层103和一有机发光层104，一封装层105设置于所述有机发光层104上，同时包覆所述薄膜晶体管阵列层103以及所述有机发光层104靠近切割线12一端的侧边，并部分覆盖所述第二聚酰亚胺层101b；所述面板边缘区13包括依次层叠设置的一第一聚酰亚胺层101a、一水氧阻隔层102、一第二聚酰亚胺层101b。所述水氧阻隔层102用于从第二聚酰亚胺层101b下方阻隔水/氧气的渗透。
在面板制备过程中会利用激光(Laser)等手段沿着切割线12进行切割，面板边缘区13被切除，最后制成的面板只保留面板区11，如图1B所示。
切割后的现有柔性显示面板，虽然有水氧阻隔层102从第二聚酰亚胺层101b下方阻隔水/氧气的渗透，但水/氧气会沿着第二聚酰亚胺层101b靠近原切割线12一端的侧边渗透(如图1B中箭头18所示渗透路径)，进而渗透进薄膜晶体管阵列层103的电路中，并影响有机发光层104的发光材料使用寿命。
因此，如何阻挡水、氧气等入侵对面板信赖性产生的损害，提高柔性显示面板的可靠性，是目前柔性显示面板发展需要解决的技术问题。
 技术解决方案
本申请的目的在于，针对现有技术存在的问题，提供一种柔性衬底基板、柔性显示面板及其制备方法，可以阻挡水、氧气等入侵对面板信赖性产生的损害，提高柔性显示面板的可靠性。
为实现上述目的，本申请提供了一种柔性衬底基板，具有被一切割线划分的一面板区和一面板边缘区；所述柔性衬底基板包括：一第一聚酰亚胺层，形成在所述面板区及所述面板边缘区；一水氧阻隔层，覆盖所述第一聚酰亚胺层；一保护层，设置于所述水氧阻隔层上的所述面板区，并靠近所述切割线，其中，所述保护层的材料包括氧化硅、氮化硅或非晶硅中的至少一种，所述保护层的厚度为0.1-5μm；以及一第二聚酰亚胺层，覆盖所述保护层及所述水氧阻隔层。
为实现上述目的，本申请还提供了一种柔性显示面板，包括一面板区，所述面板区包括一显示区及一非显示区；所述柔性显示面板包括：一柔性衬底基板，所述柔性衬底基板包括一形成在所述显示区及所述非显示区的第一聚酰亚胺层，一覆盖所述第一聚酰亚胺层的水氧阻隔层，一设置于所述水氧阻隔层上并对应所述非显示区的保护层，及一覆盖所述保护层及所述水氧阻隔层的第二聚酰亚胺层；以及依次层叠设置于所述柔性衬底基板上并对应所述显示区的一薄膜晶体管阵列层和一封装层，所述封装层同时包覆所述薄膜晶体管阵列层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层。
为实现上述目的，本申请还提供了一种柔性显示面板的制备方法，包括以下步骤：提供一硬质基板，所述硬质基板具有被一切割线划分的一面板区和一面板边缘区，所述面板区包括一显示区及一非显示区，所述非显示区靠近所述切割线；在所述硬质基板上制备一第一聚酰亚胺层，所述第一聚酰亚胺层形成在所述面板区和所述面板边缘区；在所述第一聚酰亚胺层上沉积一水氧阻隔层，所述水氧阻隔层覆盖所述第一聚酰亚胺层；在所述水氧阻隔层上对应所述非显示区制备一保护层，所述保护层靠近所述切割线；在所述保护层及所述水氧阻隔层上制备一第二聚酰亚胺层；在所述第二聚酰亚胺层上对应所述显示区依次制备一薄膜晶体管阵列层和一封装层，所述封装层同时包覆所述薄膜晶体管阵列层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层；以及分离所述硬质基板与所述第一聚酰亚胺层，及沿所述切割线切除所述面板边缘区，得到柔性显示面板。
 有益效果
本申请通过制备由第一聚酰亚胺层、水氧阻隔层、保护层和第二聚酰亚胺层组成的复合基底结构，使得制备的柔性显示面板具有良好的水和氧气阻隔性能，很大程度上降低水和氧气透过柔性衬底基板的概率，提高柔性显示面板的使用寿命；具有良好的柔韧性，利于广泛应用。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1A，切割前的现有柔性显示面板结构示意图；
图1B，切割后的现有柔性显示面板结构示意图；
图2，本申请柔性衬底基板一实施例的结构示意图；
图3，本申请柔性显示面板的制备方法的流程示意图；
图4A-图4F，本申请柔性显示面板一实施例的制备流程图；
图5，本申请柔性显示面板一实施例的层状结构示意图。
 本发明的实施方式
下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。
本申请的说明书和权利要求书以及附图中的术语“第一”“第二”“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及它们的任何变形，意图在于覆盖不排它的包含。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“之上”或“之下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
请参阅图2，本申请柔性衬底基板一实施例的结构示意图。在本实施例中，所述柔性衬底基板上包括被一切割线(Laser Cut line)22(切割刀29沿切割线22纵向切割)划分的一面板区21和一面板边缘区23。所述面板区21包括依次层叠设置的一第一聚酰亚胺层201a、一水氧阻隔层202、一保护层(Protective Layer)203以及一第二聚酰亚胺层201b；所述面板边缘区23包括依次层叠设置的一第一聚酰亚胺层201a、一水氧阻隔层202、一第二聚酰亚胺层201b。
具体的，所述第一聚酰亚胺层201a形成在所述面板区21及所述面板边缘区23。所述第一聚酰亚胺层201a的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第一聚酰亚胺层201a的厚度为5-15μm，优选为10μm。
具体的，所述水氧阻隔层202覆盖所述第一聚酰亚胺层201a，即所述水氧阻隔层202对应所述面板区21及所述面板边缘区23。所述水氧阻隔层202的材料为氧化硅(SiOx)或氮化硅(SiNx)。所述水氧阻隔层202的厚度为0.2-1μm，优选为0.5μm。所述水氧阻隔层202用于阻隔水和氧气对第二聚酰亚胺层201b的渗透，从而避免水、氧气等入侵对制备在柔性衬底基板上的组件(例如薄膜晶体管阵列层的电路及发光层的发光材料灯)产生的损害，提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
具体的，所述保护层203设置于所述水氧阻隔层202上的所述面板区21，并靠近所述切割线22，即所述保护层203对应所述面板区21，且靠近所述切割线22。所述保护层203的材料包括氧化硅(SiOx)、氮化硅(SiNx)或非晶硅(amorphous silicon，简称α-Si)中的至少一种。所述保护层203的厚度为0.1-5μm，优选为0.5μm或1μm或2μm。当后续在柔性显示面板制备过程中会利用激光(Laser)等手段沿着切割线22进行切割，面板边缘区23被切除，最后制成的面板只保留面板区21。切割后保留的面板区21，由于靠近所述切割线22设置有所述保护层203，可以延长水和氧气从靠近所述切割线22一侧对第二聚酰亚胺层201b进行渗透的渗透路径，使柔性衬底基板具有更加优秀的阻隔水和氧气的能力，进一步提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
所述第二聚酰亚胺层201b覆盖所述保护层203及所述水氧阻隔层202，即所述第二聚酰亚胺层201b对应所述面板区21及所述面板边缘区23。所述第二聚酰亚胺层202a的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第二聚酰亚胺层202a的厚度为5-15μm，优选为10μm。第一聚酰亚胺层201a和第二聚酰亚胺层201b的厚度可以有差别，具体厚度可根据实际器件类型而选择。
本实施例所述柔性衬底基板，采用由第一聚酰亚胺层201a、水氧阻隔层202、保护层203和第二聚酰亚胺层201b组成的复合基底结构。相比于单独的聚酰亚胺柔性基底或其它有机聚合材料制备的柔性基底，本实施例所述柔性衬底基板具有如下特点：具有良好的水和氧气阻隔性能，很大程度上降低水和氧气透过柔性衬底基板的概率，可以保护制备在其上的薄膜晶体管阵列层及发光层，提高柔性显示面板的使用寿命；具有良好的柔韧性，可广泛应用于制备柔性显示面板。
请参阅图3，本申请柔性显示面板的制备方法的流程示意图。本申请制备方法包括如下步骤：S31：提供一硬质基板；S32：在所述硬质基板上制备一第一聚酰亚胺层；S33：在所述第一聚酰亚胺层上沉积一水氧阻隔层；S34：在所述水氧阻隔层上对应所述柔性显示面板的非显示区制备一保护层；S35：在所述保护层及所述水氧阻隔层上制备一第二聚酰亚胺层；S36：在所述第二聚酰亚胺层上对应所述柔性显示面板的显示区依次制备一薄膜晶体管阵列层和一封装层；以及S37：分离所述硬质基板与所述第一聚酰亚胺层，及沿所述切割线切除所述面板边缘区，得到柔性显示面板。以下结合附图给出详细说明。
S31：提供一硬质基板。
进一步的实施例中，所述硬质基板具有被一切割线划分的一面板区和一面板边缘区，所述面板区包括一显示区及一非显示区，所述非显示区靠近所述切割线。
进一步的实施例中，所述硬质基板可以是玻璃基板、硅片、金属或硬质薄膜，硬质基板需要具备较高的激光透过率，以便于后续激光剥离工序的顺利进行。
S32：在所述硬质基板上制备一第一聚酰亚胺层。
进一步的实施例中，所述第一聚酰亚胺层覆盖所述面板区和所述面板边缘区。
进一步的实施例中，所述第一聚酰亚胺层的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第一聚酰亚胺层的厚度为5-15μm，优选为10μm。
S33：在所述第一聚酰亚胺层上沉积一水氧阻隔层。
进一步的实施例中，所述水氧阻隔层覆盖所述第一聚酰亚胺层，即所述水氧阻隔层对应所述面板区和所述面板边缘区。
进一步的实施例中，所述水氧阻隔层的材料为氧化硅(SiOx)或氮化硅(SiNx)。所述水氧阻隔层的厚度为0.2-1μm，优选为0.5μm。所述水氧阻隔层用于阻隔水和氧气对后续制备的第二聚酰亚胺层的渗透，从而避免水、氧气等入侵对制备在柔性衬底基板上的面板显示组件(例如薄膜晶体管阵列层的电路及发光层的发光材料等)产生的损害，提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
S34：在所述水氧阻隔层上对应所述柔性显示面板的非显示区制备一保护层。
进一步的实施例中，所述保护层对应所述面板区，且靠近所述切割线。
进一步的实施例中，所述保护层的材料包括氧化硅(SiOx)、氮化硅(SiNx)或非晶硅(amorphous silicon，简称α-Si)中的至少一种。所述保护层的厚度为0.1-5μm，优选为0.5μm或1μm或2μm。当后续在柔性显示面板制备过程中会利用激光(Laser)等手段沿着切割线进行切割，面板边缘区被切除，最后制成的面板只保留面板区。切割后保留的面板区，由于靠近所述切割线设置有所述保护层，可以延长水和氧气从靠近所述切割线一侧对第二聚酰亚胺层进行渗透的渗透路径，使柔性衬底基板具有更加优秀的阻隔水和氧气的能力，进一步提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
S35：在所述保护层及所述水氧阻隔层上制备一第二聚酰亚胺层。
进一步的实施例中，所述第二聚酰亚胺层覆盖所述保护层及所述水氧阻隔层，即所述第二聚酰亚胺层对应所述面板区及所述面板边缘区。
进一步的实施例中，所述第二聚酰亚胺层的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第二聚酰亚胺层的厚度为5-15μm，优选为10μm。第一聚酰亚胺层和第二聚酰亚胺层的厚度可以有差别，具体厚度可根据实际器件类型而选择。
S36：在所述第二聚酰亚胺层上对应所述柔性显示面板的显示区依次制备一薄膜晶体管阵列层和一封装层。
进一步的实施例中，所述薄膜晶体管阵列层包括层叠设置的栅极绝缘层(GI)、介电层(OLD)，以及分布在内部的功能部件，所述功能部件包括多晶硅层、栅电极(GE)、源/漏电极(S/D)。所述薄膜晶体管阵列层为常规技术结构，其所采用的材料、各膜层厚度可以根据需求进行调整，本申请不做特殊限定。
进一步的实施例中，所述封装层覆盖所述薄膜晶体管阵列层的上表面，同时包覆所述薄膜晶体管阵列层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层。所述封装层为常规技术结构，其所采用的材料、厚度可以根据需求进行调整，
进一步的实施例中，在所述薄膜晶体管阵列层上制备一发光层，所述发光层为OLED(Organic Light Emitting Diode，有机发光二极管)发光层，即本申请制备的柔性显示面板为OLED柔性显示面板。则所述封装层制备在所述发光层上，同时包覆所述薄膜晶体管阵列层和所述发光层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层。所述OLED发光层包括层叠设置的阳极、OLED发光材料层，以及阴极。所述OLED发光层为常规技术结构，其所采用的材料、各膜层厚度可以根据需求进行调整，本申请不做特殊限定。在其它实施例中，也可以根据需求制备QD(Quantum Dot，量子点)-OLED柔性显示面板等其它发光方式的柔性显示面板。
S37：分离所述硬质基板与所述第一聚酰亚胺层，及沿所述切割线切除所述面板边缘区，得到柔性显示面板。
进一步的实施例中，采用激光剥离工艺使所述硬质基板与所述第一聚酰亚胺层分离，及采用激光沿所述切割线切除所述面板边缘区，得到柔性显示面板。激光剥离工艺以及激光切割工艺可按照本领域内的常规工艺操作，本申请不做特殊限定。
本申请提出的一种新型的柔性显示面板的制备方法，通过制备由第一聚酰亚胺层、水氧阻隔层、保护层和第二聚酰亚胺层组成的复合基底结构，使得制备的柔性显示面板具有良好的水和氧气阻隔性能，很大程度上降低水和氧气透过柔性衬底基板的概率，提高柔性显示面板的使用寿命；具有良好的柔韧性，利于广泛应用。
请一并参阅图3、图4A-图4F及图5，其中，图4A-图4F为本申请柔性显示面板一实施例的制备流程图，图5为本申请柔性显示面板一实施例的层状结构示意图。
关于步骤S31：提供一硬质基板，请一并参考图3以及图4A，其中图4A为本申请一实施例提供的硬质基板的剖视图。其中，所述硬质基板400具有被一切割线42划分的一面板区41和一面板边缘区43，所述面板区41包括一显示区411及一非显示区412，所述非显示区412靠近所述切割线42。
进一步的实施例中，所述硬质基板400可以是玻璃基板、硅片、金属或硬质薄膜，硬质基板需要具备较高的激光透过率，以便于后续激光剥离工序的顺利进行。
关于步骤S32：在所述硬质基板上制备一第一聚酰亚胺层，请一并参考图3以及图4B，其中图4B为本申请一实施例提供的在硬质基板上制备的第一聚酰亚胺层的剖视图。其中，所述第一聚酰亚胺层401a覆盖所述面板区41和所述面板边缘区43。
进一步的实施例中，所述第一聚酰亚胺层401a的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第一聚酰亚胺层401a的厚度为5-15μm，优选为10μm。
关于步骤S33：在所述第一聚酰亚胺层上沉积一水氧阻隔层，请一并参考图3以及图4C，其中图4C为本申请一实施例提供的在第一聚酰亚胺层上制备的水氧阻隔层的剖视图。其中，所述水氧阻隔层402覆盖所述第一聚酰亚胺层401a，即所述水氧阻隔层202对应所述面板区21及所述面板边缘区23。
进一步的实施例中，所述水氧阻隔层402的材料为氧化硅(SiOx)或氮化硅(SiNx)。所述水氧阻隔层402的厚度为0.2-1μm，优选为0.5μm。所述水氧阻隔层402用于阻隔水和氧气对后续制备的第二聚酰亚胺层401b的渗透，从而避免水、氧气等入侵对制备在柔性衬底基板上的面板显示组件(例如薄膜晶体管阵列层的电路及发光层的发光材料等)产生的损害，提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
关于步骤S34：在所述水氧阻隔层上对应所述柔性显示面板的非显示区制备一保护层，请一并参考图3以及图4D，其中图4D为本申请一实施例提供的在水氧阻隔层上制备的保护层的剖视图。其中，所述保护层403对应所述面板区21，且靠近所述切割线42。
进一步的实施例中，所述保护层403的材料包括氧化硅(SiOx)、氮化硅(SiNx)或非晶硅(amorphous silicon，简称α-Si)中的至少一种。所述保护层403的厚度为0.1-5μm，优选为0.5μm或1μm或2μm。当后续在柔性显示面板制备过程中会利用激光(Laser)等手段沿着切割线42进行切割，面板边缘区43被切除，最后制成的面板只保留面板区41。切割后保留的面板区41，由于靠近所述切割线42设置有所述保护层403，可以延长水和氧气从靠近所述切割线42一侧对第二聚酰亚胺层401b进行渗透的渗透路径，使柔性衬底基板具有更加优秀的阻隔水和氧气的能力，进一步提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
关于步骤S35：在所述保护层及所述水氧阻隔层上制备一第二聚酰亚胺层，请一并参考图3以及图4E，其中图4E为本申请一实施例提供的在保护层及水氧阻隔层上制备的第二聚酰亚胺层的剖视图。其中，所述第二聚酰亚胺层401b覆盖所述保护层403及所述水氧阻隔层402，即所述第二聚酰亚胺层201b对应所述面板区21及所述面板边缘区23。
进一步的实施例中，所述第二聚酰亚胺层401b的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第二聚酰亚胺层401b的厚度为5-15μm，优选为10μm。第一聚酰亚胺层401a和第二聚酰亚胺层401b的厚度可以有差别，具体厚度可根据实际器件类型而选择。
关于步骤S36：在所述第二聚酰亚胺层上对应所述柔性显示面板的显示区依次制备一薄膜晶体管阵列层和一封装层，请一并参考图3以及图4F，其中图4F为本申请一实施例提供的切割前的柔性显示面板的剖视图。后续切割时，切割刀49(可以为激光切割刀)的下刀位置对应所述切割线42。
在本实施例中，在所述薄膜晶体管阵列层404上制备一发光层405，所述封装层406制备在所述发光层405上，同时包覆所述薄膜晶体管阵列层404和所述发光层405靠近所述非显示区412一端的侧边，并部分覆盖所述第二聚酰亚胺层401b。进一步的实施例中，所述发光层405为OLED发光层，即制备OLED柔性显示面板。
在其它实施例中，也可以根据需求制备QD(Quantum Dot，量子点)-OLED柔性显示面板等其它发光方式的柔性显示面板。所述封装层406根据需要直接制备在所述薄膜晶体管阵列层404上，覆盖所述薄膜晶体管阵列层404的上表面，同时包覆所述薄膜晶体管阵列层404靠近所述非显示区412一端的侧边，并部分覆盖所述第二聚酰亚胺层401b。
进一步的实施例中，所述薄膜晶体管阵列层404包括层叠设置的栅极绝缘层(GI)、介电层(OLD)，以及分布在内部的功能部件，所述功能部件包括多晶硅层、栅电极(GE)、源/漏电极(S/D)。所述薄膜晶体管阵列层404为常规技术结构，其所采用的材料、各膜层厚度可以根据需求进行调整，本申请不做特殊限定。所述封装层406为常规技术结构，其所采用的材料、厚度可以根据需求进行调整，本申请不做特殊限定。
进一步的实施例中，所述OLED发光层包括层叠设置的阳极、OLED发光材料层，以及阴极。所述OLED发光层为常规技术结构，其所采用的材料、各膜层厚度可以根据需求进行调整，本申请不做特殊限定。
关于步骤S37：分离所述硬质基板与所述第一聚酰亚胺层，及沿所述切割线切除所述面板边缘区，得到柔性显示面板，请一并参考图3以及图5，其中图5为本申请柔性显示面板一实施例的层状结构示意图。
进一步的实施例中，采用激光剥离工艺使所述硬质基板400与所述第一聚酰亚胺层401a分离，及采用激光沿所述切割线42切除所述面板边缘区43，得到柔性显示面板。激光剥离工艺以及激光切割工艺可按照本领域内的常规工艺操作，本申请不做特殊限定。
切割后保留的面板区41，由于靠近所述切割线42设置有所述保护层403，可以延长水和氧气从靠近所述切割线42一侧对第二聚酰亚胺层401b进行渗透的渗透路径(如图5中箭头58所示渗透路径)，使柔性衬底基板具有更加优秀的阻隔水和氧气的能力，进一步提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
请再次参阅图5，本申请还提供一种柔性显示面板。所述柔性显示面板包括：一面板区41，所述面板区41包括一显示区411及一非显示区412。所述柔性显示面板还包括：一柔性衬底基板，所述柔性衬底基板包括一形成在所述显示区411及所述非显示区412的第一聚酰亚胺层401a，一覆盖所述第一聚酰亚胺层401a的水氧阻隔层402，一设置于所述水氧阻隔层402上并对应所述非显示区412的保护层403，及一覆盖所述保护层403及所述水氧阻隔层402的第二聚酰亚胺层401b；以及依次层叠设置于所述柔性衬底基板上并对应所述显示区411的一薄膜晶体管阵列层404、一发光层405和一封装层406，所述封装层406覆盖所述发光层405，同时包覆所述薄膜晶体管阵列层404和所述发光层405靠近所述非显示区412一端的侧边，并部分覆盖所述第二聚酰亚胺层401b。
进一步的实施例中，所述第一聚酰亚胺层401a的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第一聚酰亚胺层401a的厚度为5-15μm，优选为10μm。
进一步的实施例中，所述水氧阻隔层402的材料为氧化硅(SiOx)或氮化硅(SiNx)。所述水氧阻隔层402的厚度为0.2-1μm，优选为0.5μm。所述水氧阻隔层402用于阻隔水和氧气对后续制备的第二聚酰亚胺层401b的渗透，从而避免水、氧气等入侵对制备在柔性衬底基板上的面板显示组件(例如薄膜晶体管阵列层的电路及发光层的发光材料等)产生的损害，提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
进一步的实施例中，所述保护层403的材料包括氧化硅(SiOx)、氮化硅(SiNx)或非晶硅(amorphous silicon，简称α-Si)中的至少一种。所述保护层403的厚度为0.1-5μm，优选为0.5μm或1μm或2μm。切割后保留的面板区41，由于靠近所述切割线42设置有所述保护层403，可以延长水和氧气从靠近所述切割线42一侧对第二聚酰亚胺层401b进行渗透的渗透路径(如图5中箭头所示渗透路径)，使柔性衬底基板具有更加优秀的阻隔水和氧气的能力，进一步提高采用本申请柔性衬底基板的柔性显示面板的可靠性。
进一步的实施例中，所述第二聚酰亚胺层401b的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。所述第二聚酰亚胺层401b的厚度为5-15μm，优选为10μm。第一聚酰亚胺层401a和第二聚酰亚胺层401b的厚度可以有差别，具体厚度可根据实际器件类型而选择。
进一步的实施例中，所述薄膜晶体管阵列层404包括层叠设置的栅极绝缘层(GI)、介电层(OLD)，以及分布在内部的功能部件，所述功能部件包括多晶硅层、栅电极(GE)、源/漏电极(S/D)。所述薄膜晶体管阵列层404为常规技术结构，其所采用的材料、各膜层厚度可以根据需求进行调整，本申请不做特殊限定。
进一步的实施例中，所述发光层405为OLED发光层，即本申请柔性显示面板为OLED柔性显示面板。所述OLED发光层包括层叠设置的阳极、OLED发光材料层，以及阴极。所述OLED发光层为常规技术结构，其所采用的材料、各膜层厚度可以根据需求进行调整，本申请不做特殊限定。
在其它实施例中，也可以根据需求制备LCD(( Liquid Crystal Display，液晶显示面板)等其它发光方式的柔性显示面板。所述封装层406根据需要直接制备在所述薄膜晶体管阵列层404上，覆盖所述薄膜晶体管阵列层404的上表面，同时包覆所述薄膜晶体管阵列层404靠近所述非显示区412一端的侧边，并部分覆盖所述第二聚酰亚胺层401b。所述封装层406为常规技术结构，其所采用的材料、厚度可以根据需求进行调整，本申请不做特殊限定。
本申请柔性显示面板，通过制备由第一聚酰亚胺层、水氧阻隔层、保护层和第二聚酰亚胺层组成的复合基底结构，使得制备的柔性显示面板具有良好的水和氧气阻隔性能，很大程度上降低水和氧气透过柔性衬底基板的概率，提高柔性显示面板的使用寿命；具有良好的柔韧性，利于广泛应用。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (20)

  1. 一种柔性衬底基板，具有被一切割线划分的一面板区和一面板边缘区；其中，所述柔性衬底基板包括：一第一聚酰亚胺层，形成在所述面板区及所述面板边缘区；一水氧阻隔层，覆盖所述第一聚酰亚胺层；一保护层，设置于所述水氧阻隔层上的所述面板区，并靠近所述切割线，并且其中，所述保护层的材料包括氧化硅、氮化硅或非晶硅中的至少一种，所述保护层的厚度为0.1-5μm；以及一第二聚酰亚胺层，覆盖所述保护层及所述水氧阻隔层。
  2. 如权利要求1所述的柔性衬底基板，其中，当所述面板边缘区被沿所述切割线切除后，所述水氧阻隔层用于从所述第二聚酰亚胺层下方阻隔水/氧气的渗透，所述保护层用于从所述第二聚酰亚胺层靠近所述切割线一端的侧边阻隔水/氧气的渗透。
  3. 如权利要求1所述的柔性衬底基板，其中，所述水氧阻隔层的材料为氧化硅或氮化硅。
  4. 如权利要求1所述的柔性衬底基板，其中，所述水氧阻隔层的厚度为0.2-1μm。
  5. 如权利要求1所述的柔性衬底基板，其中，所述第一聚酰亚胺层和所述第二聚酰亚胺层的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。
  6. 如权利要求1所述的柔性衬底基板，其中，所述第一聚酰亚胺层的厚度为5-15μm，所述第二聚酰亚胺层的厚度为5-15μm。
  7. 一种柔性显示面板，包括一面板区，所述面板区包括一显示区及一非显示区；其中，所述柔性显示面板包括：一柔性衬底基板，所述柔性衬底基板包括一形成在所述显示区及所述非显示区的第一聚酰亚胺层，一覆盖所述第一聚酰亚胺层的水氧阻隔层，一设置于所述水氧阻隔层上并对应所述非显示区的保护层，及一覆盖所述保护层及所述水氧阻隔层的第二聚酰亚胺层；以及依次层叠设置于所述柔性衬底基板上并对应所述显示区的一薄膜晶体管阵列层和一封装层，所述封装层同时包覆所述薄膜晶体管阵列层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层。
  8. 如权利要求7所述的柔性显示面板，其中，所述水氧阻隔层用于从所述第二聚酰亚胺层下方阻隔水/氧气的渗透，所述保护层用于从所述第二聚酰亚胺层靠近所述切割线一端的侧边阻隔水/氧气的渗透。
  9. 如权利要求7所述的柔性显示面板，其中，所述保护层的材料包括氧化硅、氮化硅或非晶硅中的至少一种。
  10. 如权利要求7所述的柔性显示面板，其中，所述保护层的厚度为0.1-5μm。
  11. 如权利要求7所述的柔性显示面板，其中，所述水氧阻隔层的材料为氧化硅或氮化硅。
  12. 如权利要求7所述的柔性显示面板，其中，所述水氧阻隔层的厚度为0.2-1μm。
  13. 如权利要求7所述的柔性显示面板，其中，所述第一聚酰亚胺层和所述第二聚酰亚胺层的材料为聚酰亚胺树脂或改性聚酰亚胺树脂。
  14. 如权利要求7所述的柔性显示面板，其中，所述第一聚酰亚胺层的厚度为5-15μm，所述第二聚酰亚胺层的厚度为5-15μm。
  15. 如权利要求7所述的柔性显示面板，其中，所述柔性显示面板还包括：一发光层，设置于所述薄膜晶体管阵列层的远离所述柔性衬底基板的一侧并对应所述显示区，所述封装层进一步同时包覆所述薄膜晶体管阵列层和所述发光层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层。
  16. 一种柔性显示面板的制备方法，其中，包括以下步骤：提供一硬质基板，所述硬质基板具有被一切割线划分的一面板区和一面板边缘区，所述面板区包括一显示区及一非显示区，所述非显示区靠近所述切割线；在所述硬质基板上制备一第一聚酰亚胺层，所述第一聚酰亚胺层形成在所述面板区和所述面板边缘区；在所述第一聚酰亚胺层上沉积一水氧阻隔层，所述水氧阻隔层覆盖所述第一聚酰亚胺层；在所述水氧阻隔层上对应所述非显示区制备一保护层，所述保护层靠近所述切割线；在所述保护层及所述水氧阻隔层上制备一第二聚酰亚胺层；在所述第二聚酰亚胺层上对应所述显示区依次制备一薄膜晶体管阵列层和一封装层，所述封装层同时包覆所述薄膜晶体管阵列层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层；以及分离所述硬质基板与所述第一聚酰亚胺层，及沿所述切割线切除所述面板边缘区，得到柔性显示面板。
  17. 如权利要求16所述的柔性显示面板的制备方法，其中，所述水氧阻隔层用于从所述第二聚酰亚胺层下方阻隔水/氧气的渗透，所述保护层用于从所述第二聚酰亚胺层靠近所述切割线一端的侧边阻隔水/氧气的渗透。
  18. 如权利要求16所述的柔性显示面板的制备方法，其中，所述保护层的材料包括氧化硅、氮化硅或非晶硅中的至少一种。
  19. 如权利要求16所述的柔性显示面板的制备方法，其中，所述保护层的厚度为0.1-5μm。
  20. 如权利要求16所述的柔性显示面板的制备方法，其中，所述的在所述第二聚酰亚胺层上对应所述显示区依次制备一薄膜晶体管阵列层和一封装层，所述封装层同时包覆所述薄膜晶体管阵列层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层的步骤进一步包括：在所述第二聚酰亚胺层上对应所述显示区依次制备一薄膜晶体管阵列层、一发光层和一封装层，所述封装层同时包覆所述薄膜晶体管阵列层和所述发光层靠近所述非显示区一端的侧边，并部分覆盖所述第二聚酰亚胺层。
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