WO2021031302A1 - 子像素结构、有机发光二极管显示屏及其制造方法 - Google Patents

子像素结构、有机发光二极管显示屏及其制造方法 Download PDF

Info

Publication number
WO2021031302A1
WO2021031302A1 PCT/CN2019/109511 CN2019109511W WO2021031302A1 WO 2021031302 A1 WO2021031302 A1 WO 2021031302A1 CN 2019109511 W CN2019109511 W CN 2019109511W WO 2021031302 A1 WO2021031302 A1 WO 2021031302A1
Authority
WO
WIPO (PCT)
Prior art keywords
color film
sub
pixel structure
emitting diode
organic light
Prior art date
Application number
PCT/CN2019/109511
Other languages
English (en)
French (fr)
Inventor
龚文亮
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/623,532 priority Critical patent/US20210408505A1/en
Publication of WO2021031302A1 publication Critical patent/WO2021031302A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations

Definitions

  • the present disclosure relates to the field of display technology, in particular to a sub-pixel structure, an organic light emitting diode display screen and a manufacturing method thereof.
  • the reflectance of the panel under strong light can be reduced by installing a polarizer, it will also lose a lot of light from the organic light-emitting diode display. This shortcoming will greatly increase the burden of the organic light-emitting diode display and reduce the use of the display. life.
  • the thickness of the polarizer is large and the material is brittle, which is not conducive to the development of dynamic bending products.
  • the reflectance of the panel under strong light can be reduced by installing a polarizer, it will also lose a lot of light from the organic light emitting diode display. This shortcoming will greatly increase the burden of the organic light emitting diode display and reduce the service life of the display.
  • the thickness of the polarizer is large and the material is brittle, which is not conducive to the development of dynamic bending products.
  • the present disclosure proposes a sub-pixel structure, an organic light-emitting diode display screen and a manufacturing method thereof, which can reduce the thickness of the organic light-emitting diode display screen, increase the light output rate, and avoid exposure, development, and post-baking in the color film manufacturing process.
  • the present disclosure provides a sub-pixel structure, which includes a sub-pixel structure of an encapsulation segment; a color film, arranged on the light-emitting surface of the upper surface of the sub-pixel structure of the encapsulation segment, and the color film is hemispherical.
  • the sub-pixel structure further includes a black matrix, and the black matrix is disposed on the light-emitting surface of the other part of the sub-pixel structure of the package segment where the color film is not disposed.
  • the color film is a hemispherical polymer with pigment.
  • a light-emitting layer is disposed inside the sub-pixel structure of the package segment, and the contact surface between the color filter and the sub-pixel structure of the package segment is larger than the top surface of the light-emitting layer.
  • a light-emitting layer is disposed inside the sub-pixel structure of the package segment, and the left and right edges of the color filter are aligned with the left and right edges of the light-emitting layer.
  • the color film includes an ink layer.
  • the present disclosure also provides an organic light emitting diode display screen, which includes an organic light emitting diode panel in an encapsulated section, and the organic light emitting diode panel in an encapsulated section includes a red sub-pixel structure, a green sub-pixel structure, and a blue sub-pixel structure;
  • a red color film is arranged on the light-emitting surface of the red sub-pixel structure, the red color film is hemispherical;
  • a green color film is arranged on the light-emitting surface of the green sub-pixel structure, and the green color film is a hemisphere
  • a blue color film arranged on the light-emitting surface of the blue sub-pixel structure, the blue color film is hemispherical.
  • the red sub-pixel structure includes a red light-emitting layer configured to emit red light
  • the green sub-pixel structure includes a red light-emitting layer configured to emit red light
  • the blue sub-pixel structure includes The blue light emitting layer is configured to emit blue light.
  • the arrangement position of the red color film is aligned with the arrangement position of the red light-emitting layer
  • the arrangement position of the green color film is aligned with the arrangement position of the green light-emitting layer
  • the The setting position of the blue color film is aligned with the setting position of the blue light-emitting layer.
  • the contact surface between the red color film and the encapsulated organic light emitting diode display is larger than the top surface of the red light emitting layer.
  • the contact surface between the green color film and the encapsulated organic light emitting diode display is larger than the top surface of the green light emitting layer.
  • the contact surface between the blue color film and the encapsulated organic light emitting diode display is larger than the top surface of the blue light emitting layer.
  • the red color film, the green color film, and the blue color film are respectively a hemispherical polymer added with a pigment.
  • it further includes a black matrix, the black matrix is arranged on the encapsulated section of the organic light emitting diode panel without the red color film, the green color film and the blue color film. Part of the light-emitting surface.
  • the red color film, the green color film, and the blue color film include a red ink layer, a green ink layer, and a blue ink layer, respectively.
  • the black matrix includes a black ink layer.
  • the present disclosure further provides a method for manufacturing an organic light emitting diode display screen, which includes: providing an organic light emitting diode panel in a packaged segment, the organic light emitting diode panel in a packaged segment includes a red sub-pixel structure, a green sub-pixel structure, and a blue sub-pixel structure.
  • a hemispherical blue color film is arranged on the light-emitting surface of the pixel structure.
  • the method further includes that the organic light emitting diode panel of the encapsulation section is not provided with the red color film, A black matrix is arranged on the light emitting surface of the green color film and other parts of the blue color film.
  • the red color film, the green color film, and the blue color film are arranged on the light-emitting surface of the red sub-pixel structure, the green color film by inkjet printing The light-emitting surface of the sub-pixel structure and the light-emitting surface of the blue sub-pixel structure.
  • the black matrix is arranged on the encapsulation section organic light-emitting diode panel by inkjet printing without the red color film, the green color film and the blue color film. The other part of the light-emitting surface.
  • the sub-pixel structure includes an encapsulated sub-pixel structure and a color film disposed on a light-emitting surface of the upper surface of the encapsulated sub-pixel structure, wherein the color film is hemispherical.
  • the sub-pixel structure includes an encapsulated sub-pixel structure and a color film disposed on a light-emitting surface of the upper surface of the encapsulated sub-pixel structure, wherein the color film is hemispherical.
  • FIG. 1 shows a block diagram of a sub-pixel structure of a packaged segment according to an embodiment of the present disclosure
  • FIG. 2 shows a block diagram of a sub-pixel structure according to an embodiment of the present disclosure
  • FIG. 3 shows a block diagram of a sub-pixel structure according to an embodiment of the present disclosure
  • FIG. 4 shows a schematic block diagram of an organic light emitting diode display screen with a packaged section according to an embodiment of the present disclosure
  • FIG. 5 shows a block diagram of an organic light emitting diode display screen according to an embodiment of the present disclosure
  • FIG. 6 shows a block diagram of an organic light emitting diode display screen according to an embodiment of the present disclosure
  • FIG. 7 shows a schematic flow chart of a manufacturing method of an organic light emitting diode display screen according to an embodiment of the present disclosure.
  • the package sub-pixel structure 10 includes a substrate PI, a buffer layer BUF disposed on the substrate, an active layer ACT disposed on the buffer layer BUF, and a first layer gate electrode GE- disposed on the active layer. 1.
  • the second gate GE-2 arranged on the first gate GE-1, the first gate dielectric layer GI-1 arranged on the buffer layer BUF, and the first gate dielectric layer
  • the sub-pixel structure 20 includes a sub-pixel structure 10 of the package segment, and a hemispherical color film S is provided on the light-emitting surface of the sub-pixel structure 10 of the package segment to form the anti-reflection effect of the lens.
  • a light-emitting layer EML is also provided inside the sub-pixel structure 10 of the package segment.
  • the color film S is a hemispherical polymer with pigment.
  • the setting position of the color film S is aligned with the setting position of the light-emitting layer EM.
  • the contact surface between the color filter S and the sub-pixel structure 10 of the package segment is larger than the top surface of the light emitting layer EML.
  • the left and right edges of the color film S are aligned with the left and right edges of the light-emitting layer EML.
  • the color film S includes an ink layer.
  • the color film S is disposed on the light-emitting surface of the sub-pixel structure 10 of the package segment by ink-jet printing (IJP), so as to avoid exposure, development, and development during the color film manufacturing process.
  • IJP ink-jet printing
  • the negative effect of the post-baking process reduces the thickness of the sub-pixel structure and improves the light output rate of the sub-pixel structure.
  • FIG. 3 shows a block diagram of a sub-pixel structure according to an embodiment of the present disclosure.
  • the sub-pixel structure 30 further includes a black matrix BM disposed on the light-emitting surface of the other part of the sub-pixel structure 10 of the package segment where the color film S is not provided, so as to reduce light leakage and reflection.
  • the black matrix BM is printed by ink-jet printing (ink-jet printing, IJP) is set on the light-emitting surface of the other part of the sub-pixel structure 10 of the package segment where the color film S is not provided.
  • IJP ink-jet printing
  • FIG. 4 shows a block schematic diagram of an organic light emitting diode display screen of a packaged segment according to an embodiment of the present disclosure.
  • the encapsulated organic light emitting diode display screen 40 includes a red sub-pixel structure PIXR, a green sub-pixel structure PIXG and a blue sub-pixel structure PIXB, and the red sub-pixel structure PIXR includes a red light-emitting layer REML and a green sub-pixel configured to emit red light.
  • the pixel structure PIXG includes a green light-emitting layer GEML configured to emit green light
  • the blue sub-pixel structure PIXB includes a blue light-emitting layer BEML configured to emit blue light.
  • the encapsulated organic light emitting diode display screen 40 shown in FIG. 4 is composed of a plurality of encapsulated sub-pixel structures 10 emitting light of different colors, but the encapsulated organic light emitting diode display screen of the present disclosure is not Limited to this.
  • FIG. 5 shows a block diagram of an organic light emitting diode display screen according to an embodiment of the present disclosure.
  • the organic light emitting diode display 50 includes a packaged organic light emitting diode display 40, a hemispherical red color film RS is further arranged on the light-emitting surface of the red sub-pixel structure PIXR, and the green sub-pixel structure PIXG A hemispherical green color film GS is also provided on the light-emitting surface, and a hemispherical blue color film BS is also provided on the light-emitting surface of the blue sub-pixel structure PIXB, respectively forming the anti-reflection effect of the lens.
  • the organic light emitting diode display screen 50 does not need to be provided with a polarizer. It can also effectively reduce the reflectance under strong light and increase the light output.
  • the red color film RS, the green color film GS, and the blue color film BS are respectively hemispherical polymers added with pigments.
  • the arrangement position of the red color film RS is aligned with the arrangement position of the red light-emitting layer REML.
  • the setting position of the green color film GS is aligned with the setting position of the green light-emitting layer GEML.
  • the arrangement position of the blue color film BS is aligned with the arrangement position of the blue light-emitting layer BEML.
  • the contact surface between the red color film RS and the encapsulated organic light emitting diode display screen 40 is larger than the top surface of the red light emitting layer REML. In an embodiment of the present disclosure, the contact surface between the green color film GS and the encapsulated organic light emitting diode display screen 40 is larger than the top surface of the green light emitting layer GEML. In an embodiment of the present disclosure, the contact surface between the blue color film BS and the encapsulated organic light emitting diode display screen 40 is larger than the top surface of the blue light emitting layer BEML.
  • the left and right edges of the red color film RS are aligned with the left and right edges of the red light-emitting layer REML.
  • the left and right edges of the green color film GS are aligned with the left and right edges of the green light-emitting layer GEML.
  • the left and right edges of the blue color film BS are aligned with the left and right edges of the blue light-emitting layer BEML.
  • FIG. 6 shows a block diagram of an organic light emitting diode display screen according to an embodiment of the present disclosure.
  • the organic light-emitting diode display 60 also includes a light-emitting surface of the other part of the organic light-emitting diode display 40 that is not provided with a red color film RS, a green color film GS, and a blue color film BS.
  • the black matrix BM achieves the effect of reducing light leakage and reflection of the organic light emitting diode display 60.
  • the red color film RS, the green color film GS, and the blue color film BS respectively include a red ink layer, a green ink layer, and a blue ink layer.
  • the red color film RS, the green color film GS, and the blue color film BS are arranged on the red sub-pixel structure PIXR, the green sub-pixel structure PIXG, and the blue sub-pixel structure by inkjet printing. The light-emitting surface of the pixel structure PIXB.
  • the black matrix BM includes a black ink layer. In an embodiment of the present disclosure, the black matrix BM is arranged on the light-emitting surface of the organic light emitting diode panel 60 of the packaging section by inkjet printing without the red color film RS, the green color film GS, and the blue color film BS. on.
  • FIG. 7 shows a schematic flowchart of a method for manufacturing an organic light emitting diode display screen according to an embodiment of the present disclosure.
  • the manufacturing method of the organic light emitting diode display screen includes:
  • Process S1 Provide a packaged organic light emitting diode panel.
  • the packaged organic light emitting diode panel includes a red sub-pixel structure, a green sub-pixel structure and a blue sub-pixel structure.
  • Process S2 setting a hemispherical red color film on the light-emitting surface of the red sub-pixel structure.
  • Process S3 setting a hemispherical green color film on the light-emitting surface of the green sub-pixel structure.
  • Process S4 setting a hemispherical blue color film on the light-emitting surface of the blue sub-pixel structure.
  • the manufacturer can change the sequence of the process S2, the process S3, and the process S4 according to the needs of the process.
  • the organic light emitting diode panel of the packaging section is not provided with the red color film
  • a black matrix is arranged on the light-emitting surface of the green color film and other parts of the blue color film.
  • the red color film, the green color film, and the blue color film are arranged on the light-emitting surface of the red sub-pixel structure and the green sub-pixel by inkjet printing.
  • the light-emitting surface of the pixel structure and the light-emitting surface of the blue sub-pixel structure are arranged on the red color film, the green color film, and the blue color film.
  • the black matrix is arranged on the encapsulation section organic light emitting diode panel by inkjet printing.
  • the red color film, the green color film and the blue color film are not provided. Part of the light-emitting surface.
  • the present disclosure provides a sub-pixel structure, an organic light emitting diode display screen and a manufacturing method thereof.
  • the sub-pixel structure includes an encapsulated sub-pixel structure and a color film disposed on the light-emitting surface of the upper surface of the encapsulated sub-pixel structure, wherein the color film is hemispherical, so as to reduce the thickness of the organic light emitting diode display screen and improve the organic
  • the light-emitting rate of the LED display can avoid the negative effects of the exposure, development, and post-baking process in the color film manufacturing process, and the effect of effectively reducing the reflectivity of the organic light-emitting diode display under strong light without the need for a polarizer.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种子像素结构、有机发光二极管显示屏及其制造方法。所述子像素结构包括封装段子像素结构（10）及设置在所述封装段子像素结构（10）的出光面上的彩膜（S），所述彩膜（S）为半球形。

Description

子像素结构、有机发光二极管显示屏及其制造方法 技术领域
本揭示涉及显示技术领域，具体涉及子像素结构、有机发光二极管显示屏及其制造方法。
 背景技术
在现有技术中，为满足有机发光二极管(organic light-emitting diode, OLED)显示屏的运作需求，常通过设置偏光片降低强光下显示屏的反射率。
然而，虽然通过设置偏光片可降低强光下面板的反射率，但也会大量损失有机发光二极管显示屏的出光，这一缺点会极大地增加有机发光二极管显示屏的负担，降低显示屏的使用寿命。另一方面，偏光片厚度较大、材质脆，不利于动态弯折产品的开发。
故，有需要提供一种新的子像素结构、有机发光二极管显示屏及其制造方法，以解决现有技术存在的问题。
 技术问题
虽然通过设置偏光片可降低强光下面板的反射率，但也会大量损失有机发光二极管显示屏的出光，这一缺点会极大地增加有机发光二极管显示屏的负担，降低显示屏的使用寿命。另一方面，偏光片厚度较大、材质脆，不利于动态弯折产品的开发。
 技术解决方案
为解决上述问题，本揭示提出一种子像素结构、有机发光二极管显示屏及其制造方法，其可达到降低有机发光二极管显示屏厚度，提升出光率，回避彩膜制程中曝光、显影、后烘烤制程的负面影响以及达到不需设置偏光片亦能有效地降低强光下有机发光二极管显示屏的反射率的效果。
为达成上述目的，本揭示提供一种子像素结构，其包括封装段子像素结构；彩膜，设置在所述封装段子像素结构上表面的出光面上，所述彩膜为半球形。
于本揭示其中的一实施例中，所述子像素结构还包含黑色矩阵，所述黑色矩阵设置在所述封装段子像素结构未设置所述彩膜的其他部份的出光面上。
于本揭示其中的一实施例中，所述彩膜为加入颜料的半球形聚合物。
于本揭示其中的一实施例中，所述封装段子像素结构内部设置有发光层，所述彩膜与所述封装段子像素结构的接触面大于所述发光层的顶面。
于本揭示其中的一实施例中，所述封装段子像素结构内部设置有发光层，所述彩膜的左右边缘对准所述发光层的左右边缘。
于本揭示其中的一实施例中，所述彩膜包括墨水层。
为达成上述目的，本揭示还提供一种有机发光二极管显示屏，包括封装段有机发光二极管面板，所述封装段有机发光二极管面板包含红色子像素结构，绿色子像素结构及蓝色子像素结构；红色彩膜，设置在所述红色子像素结构的出光面上，所述红色彩膜为半球形；绿色彩膜，设置在所述绿色子像素结构的出光面上，所述绿色彩膜为半球形；以及蓝色彩膜，设置在所述蓝色子像素结构的出光面上，所述蓝色彩膜为半球形。
于本揭示其中的一实施例中，所述红色子像素结构包含被配置为发出红光的红色发光层、绿色子像素结构包含被配置为发出红光的红色发光层，蓝色子像素结构包含被配置为发出蓝光的蓝色发光层。
于本揭示其中的一实施例中，所述红色彩膜的设置位置对准所述红色发光层的设置位置，所述绿色彩膜的设置位置对准所述绿色发光层的设置位置，所述蓝色彩膜的设置位置对准所述蓝色发光层的设置位置。
于本揭示其中的一实施例中，所述红色彩膜与所述封装段有机发光二极管显示屏的接触面大于所述红色发光层的顶面。
于本揭示其中的一实施例中，所述绿色彩膜与所述封装段有机发光二极管显示屏的接触面大于所述绿色发光层的顶面。
于本揭示其中的一实施例中，所述蓝色彩膜与所述封装段有机发光二极管显示屏的接触面大于所述蓝色发光层的顶面。
于本揭示其中的一实施例中，所述红色彩膜、所述绿色彩膜及所述蓝色彩膜分别为加入颜料的半球形聚合物。
于本揭示其中的一实施例中，还包含黑色矩阵，所述黑色矩阵设置在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上。
于本揭示其中的一实施例中，所述红色彩膜、所述绿色彩膜及所述蓝色彩膜分别包括红色墨水层、绿色墨水层及蓝色墨水层。
于本揭示其中的一实施例中，所述黑色矩阵包括黑色墨水层。
为达成上述目的，本揭示再提供一种有机发光二极管显示屏的制造方法，包括:提供封装段有机发光二极管面板，所述封装段有机发光二极管面板包含红色子像素结构，绿色子像素结构及蓝色子像素结构；在所述红色子像素结构的出光面上设置半球形的红色彩膜；在所述绿色子像素结构的出光面上设置半球形的绿色彩膜；以及在所述蓝色子像素结构的出光面上设置半球形的蓝色彩膜。
于本揭示其中的一实施例中，在设置所述红色彩膜、所述绿色彩膜、所述蓝色彩膜后，还包含在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上设置黑色矩阵。
于本揭示其中的一实施例中，所述红色彩膜、所述绿色彩膜、所述蓝色彩膜是通过喷墨打印方式设置在所述红色子像素结构的所述出光面、所述绿色子像素结构的所述出光面及所述蓝色子像素结构的所述出光面上。
于本揭示其中的一实施例中，所述黑色矩阵是通过喷墨打印方式设置在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上。
由于本揭示所提供的子像素结构、有机发光二极管显示屏及其制造方法。所述子像素结构包括封装段子像素结构及设置在所述封装段子像素结构上表面的出光面上的彩膜，其中所述彩膜为半球形。以达到降低有机发光二极管显示屏厚度，提升有机发光二极管显示屏出光率，回避彩膜制程中曝光、显影、后烘烤制程的负面影响以及不需设置偏光片亦能有效地降低强光下的反射率的效果。
 有益效果
相较于现有技术，由于本揭示所提供的子像素结构、有机发光二极管显示屏及其制造方法。所述子像素结构包括封装段子像素结构及设置在所述封装段子像素结构上表面的出光面上的彩膜，其中所述彩膜为半球形。以达到降低有机发光二极管显示屏厚度，提升有机发光二极管显示屏出光率，回避彩膜制程中曝光、显影、后烘烤制程的负面影响以及不需设置偏光片亦能有效地降低强光下的反射率的效果。
 附图说明
图1显示根据本揭示的一实施例的封装段子像素结构的方块示意图；
图2显示根据本揭示的一实施例的子像素结构的方块示意图；
图3显示根据本揭示的一实施例的子像素结构的方块示意图；
图4显示根据本揭示的一实施例的封装段有机发光二极管显示屏的方块示意图；
图5显示根据本揭示的一实施例的有机发光二极管显示屏的方块示意图；
图6显示根据本揭示的一实施例的有机发光二极管显示屏的方块示意图；
图7显示根据本揭示的一实施例的有机发光二极管显示屏的制造方法流程示意图。
 本发明的最佳实施方式
以下实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。
在图中，结构相似的单元以相同标号表示。
请参阅图1，其显示根据本揭示的一实施例的封装段子像素结构的方块示意图。在图1的实施例中，封装段子像素结构10包含基板PI，设置在基板上的缓冲层BUF，设置在缓冲层BUF上的主动层ACT，设置在主动层上的第一层闸极GE-1、设置在第一层闸极GE-1上的第二层闸极GE-2、设置在缓冲层BUF上的第一闸极介电层GI-1、设置在第一闸极介电层GI-1上的第二闸极介电层GI-2、设置在第二闸极介电层GI-2上的第一层间绝缘层ILD-1、设置在第一层间绝缘层ILD-1上的第二层间绝缘层ILD-2、设置在第二层间绝缘层ILD-2上的平坦化层PLN、设置在平坦化层PLN上的像素界定层PDL、设置在像素界定层PDL上的氮化硅层SiN、设置在氮化硅层SiN上的喷墨列印层IJP、设置在喷墨列印层上的氮化硅层SiN、设置在像素界定层PDL与平坦化层PLN之间的电极node以及设置在电极node上方的发光层EML。其中，图1揭示的封装段子像素结构10仅为封装段子像素结构的一种示例，然而本揭露的封装段子像素结构不限于此。
请参阅图2，其显示根据本揭示的一实施例的子像素结构的方块示意图。其中，子像素结构20包含封装段子像素结构10，在封装段子像素结构10的出光面设置有半球形的彩膜S，形成透镜的增透效应。其中，封装段子像素结构10内部还设置有发光层EML。通过设置彩膜S，子像素结构20，达到不需设置偏光片亦能有效地降低强光下的反射率，并提升出光率的效果。
于本揭示的一实施例中，彩膜S为加入颜料的半球形聚合物。
于本揭示的一实施例中，彩膜S的设置位置对准所述发光层EM的设置位置。于本揭示的一实施例中，所述彩膜S与所述封装段子像素结构10的接触面大于所述发光层EML的顶面。于本揭示的一实施例中，所述彩膜S的左右边缘对准所述发光层EML的左右边缘。
于本揭示的一实施例中，所述彩膜S包括墨水层。于本揭示的一实施例中，所述彩膜S是通过喷墨打印(Ink-jet printing, IJP)方式设置在封装段子像素结构10的出光面上，达到回避彩膜制程中曝光、显影、后烘烤制程的负面影响，降低子像素结构厚度，提升子像素结构出光率的效果。
请参阅图3，其显示根据本揭示的一实施例的子像素结构的方块示意图。其与图2的差异在于，子像素结构30还包含设置在封装段子像素结构10未设置彩膜S的其他部份的出光面上的黑色矩阵BM，达到降低漏光与反射的效果。
于本揭示的一实施例中，所述黑色矩阵BM是通过喷墨打印(ink-jet printing, IJP)方式设置在封装段子像素结构10未设置彩膜S的其他部份的出光面上。
请参阅图4，其显示根据本揭示的一实施例的封装段有机发光二极管显示屏的方块示意图。其中，封装段有机发光二极管显示屏40包含红色子像素结构PIXR，绿色子像素结构PIXG及蓝色子像素结构PIXB，红色子像素结构PIXR包含被配置为发出红光的红色发光层REML、绿色子像素结构PIXG包含被配置为发出绿光的绿色发光层GEML、蓝色子像素结构PIXB包含被配置为发出蓝光的蓝色发光层BEML。
其中，于本揭示的一实施例中，图4揭示的封装段有机发光二极管显示屏40为多个发出不同色光的封装段子像素结构10所构成，然而本揭露的封装段有机发光二极管显示屏不限于此。
请参阅图5，其显示根据本揭示的一实施例的有机发光二极管显示屏的方块示意图。其中，有机发光二极管显示屏50包含封装段有机发光二极管显示屏40、在所述红色子像素结构PIXR的出光面上还设置有半球形的红色彩膜RS、在所述绿色子像素结构PIXG的出光面上还设置有半球形的绿色彩膜GS，以及在所述蓝色子像素结构PIXB的出光面上还设置有半球形的蓝色彩膜BS，分别形成透镜的增透效应。换言之，通过在封装段有机发光二极管显示屏40上形成微透镜阵列（microlens arrays, MLA）的红色彩膜RS、绿色彩膜GS及蓝色彩膜BS，有机发光二极管显示屏50不需设置偏光片亦能达到有效地降低强光下的反射率，并提升出光率的效果。
于本揭示的一实施例中，红色彩膜RS、绿色彩膜GS及蓝色彩膜BS分别为加入颜料的半球形聚合物。
于本揭示的一实施例中，红色彩膜RS的设置位置对准所述红色发光层REML的设置位置。于本揭示的一实施例中，绿色彩膜GS的设置位置对准所述绿色发光层GEML的设置位置。于本揭示的一实施例中，蓝色彩膜BS的设置位置对准所述蓝色发光层BEML的设置位置。
于本揭示的一实施例中，红色彩膜RS与封装段有机发光二极管显示屏40的接触面大于红色发光层REML的顶面。于本揭示的一实施例中，绿色彩膜GS与封装段有机发光二极管显示屏40的接触面大于绿色发光层GEML的顶面。于本揭示的一实施例中，蓝色彩膜BS与封装段有机发光二极管显示屏40的接触面大于蓝色发光层BEML的顶面。
于本揭示的一实施例中，红色彩膜RS的左右边缘对准红色发光层REML的左右边缘。于本揭示的一实施例中，绿色彩膜GS的左右边缘对准绿色发光层GEML的左右边缘。于本揭示的一实施例中，蓝色彩膜BS的左右边缘对准蓝色发光层BEML的左右边缘。
请参阅图6，其显示根据本揭示的一实施例的有机发光二极管显示屏的方块示意图。其与图5的差异在于，有机发光二极管显示屏60还包含设置在封装段有机发光二极管显示屏40未设置红色彩膜RS、绿色彩膜GS及蓝色彩膜BS的其他部份的出光面的黑色矩阵BM，达到降低有机发光二极管显示屏60漏光与反射的效果。
于本揭示的一实施例中，红色彩膜RS、绿色彩膜GS及蓝色彩膜BS分别包括红色墨水层、绿色墨水层及蓝色墨水层。于本揭示的一实施例中，红色彩膜RS、绿色彩膜GS及蓝色彩膜BS是通过喷墨打印方式设置在红色子像素结构PIXR、所述绿色子像素结构PIXG及所述蓝色子像素结构PIXB的出光面上。
于本揭示的一实施例中，黑色矩阵BM包括黑色墨水层。于本揭示的一实施例中，黑色矩阵BM是通过喷墨打印方式设置在封装段有机发光二极管面板60未设置红色彩膜RS、绿色彩膜GS及蓝色彩膜BS的其他部份的出光面上。
请参阅图7，其显示根据本揭示的一实施例的有机发光二极管显示屏的制造方法流程示意图。其中，有机发光二极管显示屏的制造方法包括:
流程S1:提供封装段有机发光二极管面板，所述封装段有机发光二极管面板包含红色子像素结构，绿色子像素结构及蓝色子像素结构。
流程S2:在所述红色子像素结构的出光面上设置半球形的红色彩膜。
流程S3:在所述绿色子像素结构的出光面上设置半球形的绿色彩膜。
流程S4:在所述蓝色子像素结构的出光面上设置半球形的蓝色彩膜。
于本揭示的一实施例中，生产者可视制程需要，改变流程S2、流程S3及流程S4的顺序。
于本揭示的一实施例中，在设置所述红色彩膜、所述绿色彩膜、所述蓝色彩膜后，还包含在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上设置黑色矩阵。
于本揭示的一实施例中，所述红色彩膜、所述绿色彩膜、所述蓝色彩膜是通过喷墨打印方式设置在所述红色子像素结构的所述出光面、所述绿色子像素结构的所述出光面及所述蓝色子像素结构的所述出光面上。
于本揭示的一实施例中，所述黑色矩阵是通过喷墨打印方式设置在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上。
由于本揭示提供的一种子像素结构、有机发光二极管显示屏及其制造方法。所述子像素结构包括封装段子像素结构及设置在所述封装段子像素结构上表面的出光面上的彩膜，其中所述彩膜为半球形，以达到降低有机发光二极管显示屏厚度，提升有机发光二极管显示屏出光率，回避彩膜制程中曝光、显影、后烘烤制程的负面影响以及不需设置偏光片亦能有效地降低强光下有机发光二极管显示屏的反射率的效果。
以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。

Claims (20)

  1. 一种子像素结构，包括:
    封装段子像素结构；以及
    彩膜，设置在所述封装段子像素结构的出光面上，所述彩膜为半球形。
  2. 如权利要求1所述的子像素结构，其还包含黑色矩阵，所述黑色矩阵设置在所述封装段子像素结构未设置所述彩膜的其他部份的出光面上。
  3. 如权利要求1所述的子像素结构，其中所述彩膜为加入颜料的半球形聚合物。
  4. 如权利要求1所述的子像素结构，其中所述封装段子像素结构内部设置有发光层，所述彩膜与所述封装段子像素结构的接触面大于所述发光层的顶面。
  5. 如权利要求1所述的子像素结构，其中所述封装段子像素结构内部设置有发光层，所述彩膜的左右边缘对准所述发光层的左右边缘。
  6. 如权利要求1所述的子像素结构，其中所述彩膜包括墨水层。
  7. 一种有机发光二极管显示屏，包括:
    封装段有机发光二极管面板，所述封装段有机发光二极管面板包含红色子像素结构，绿色子像素结构及蓝色子像素结构；
    红色彩膜，设置在所述红色子像素结构的出光面上，所述红色彩膜为半球形；
    绿色彩膜，设置在所述绿色子像素结构的出光面上，所述绿色彩膜为半球形；以及
    蓝色彩膜，设置在所述蓝色子像素结构的出光面上，所述蓝色彩膜为半球形。
  8. 如权利要求7所述的有机发光二极管显示屏，其中所述红色子像素结构包含被配置为发出红光的红色发光层、绿色子像素结构包含被配置为发出红光的红色发光层，蓝色子像素结构包含被配置为发出蓝光的蓝色发光层。
  9. 如权利要求8所述的有机发光二极管显示屏，其中所述红色彩膜的设置位置对准所述红色发光层的设置位置，所述绿色彩膜的设置位置对准所述绿色发光层的设置位置，所述蓝色彩膜的设置位置对准所述蓝色发光层的设置位置。
  10. 如权利要求8所述的有机发光二极管显示屏，其中所述红色彩膜与所述封装段有机发光二极管显示屏的接触面大于所述红色发光层的顶面。
  11. 如权利要求8所述的有机发光二极管显示屏，其中所述绿色彩膜与所述封装段有机发光二极管显示屏的接触面大于所述绿色发光层的顶面。
  12. 如权利要求8所述的有机发光二极管显示屏，其中所述蓝色彩膜与所述封装段有机发光二极管显示屏的接触面大于所述蓝色发光层的顶面。
  13. 如权利要求7所述的有机发光二极管显示屏，其中所述红色彩膜、所述绿色彩膜及所述蓝色彩膜分别为加入颜料的半球形聚合物。
  14. 如权利要求7所述的有机发光二极管显示屏，其还包含黑色矩阵，所述黑色矩阵设置在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上。
  15. 如权利要求7所述的有机发光二极管显示屏，其中所述红色彩膜、所述绿色彩膜及所述蓝色彩膜分别包括红色墨水层、绿色墨水层及蓝色墨水层。
  16. 如权利要求7所述的有机发光二极管显示屏，其中所述黑色矩阵包括黑色墨水层。
  17. 一种有机发光二极管显示屏的制造方法，其包括:
    提供封装段有机发光二极管面板，所述封装段有机发光二极管面板包含红色子像素结构，绿色子像素结构及蓝色子像素结构；
    在所述红色子像素结构的出光面上设置半球形的红色彩膜；
    在所述绿色子像素结构的出光面上设置半球形的绿色彩膜；以及
    在所述蓝色子像素结构的出光面上设置半球形的蓝色彩膜。
  18. 如权利要求17所述的有机发光二极管显示屏的制造方法，其中在设置所述红色彩膜、所述绿色彩膜、所述蓝色彩膜后，还包含在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上设置黑色矩阵。
  19. 如权利要求17所述的有机发光二极管显示屏的制造方法，其中所述红色彩膜、所述绿色彩膜、所述蓝色彩膜是通过喷墨打印方式设置在所述红色子像素结构的所述出光面、所述绿色子像素结构的所述出光面及所述蓝色子像素结构的所述出光面上。
  20. 如权利要求18所述的有机发光二极管显示屏的制造方法，其中所述黑色矩阵是通过喷墨打印方式设置在所述封装段有机发光二极管面板未设置所述红色彩膜、所述绿色彩膜及所述蓝色彩膜的其他部份的出光面上。
PCT/CN2019/109511 2019-08-20 2019-09-30 子像素结构、有机发光二极管显示屏及其制造方法 WO2021031302A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/623,532 US20210408505A1 (en) 2019-08-20 2019-09-30 Sub-pixel structure, organic light emitting diode display panel, and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910770562.7 2019-08-20
CN201910770562.7A CN110610963A (zh) 2019-08-20 2019-08-20 子像素结构、有机发光二极管显示屏及其制造方法

Publications (1)

Publication Number Publication Date
WO2021031302A1 true WO2021031302A1 (zh) 2021-02-25

Family

ID=68890807

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/109511 WO2021031302A1 (zh) 2019-08-20 2019-09-30 子像素结构、有机发光二极管显示屏及其制造方法

Country Status (3)

Country Link
US (1) US20210408505A1 (zh)
CN (1) CN110610963A (zh)
WO (1) WO2021031302A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114267807A (zh) * 2021-12-15 2022-04-01 武汉华星光电半导体显示技术有限公司 一种显示面板

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111276515B (zh) * 2020-02-07 2022-10-04 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
CN111769143B (zh) * 2020-06-23 2022-09-09 武汉华星光电半导体显示技术有限公司 显示面板及其制造方法
CN111785760B (zh) * 2020-07-20 2023-09-29 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07253509A (ja) * 1994-03-16 1995-10-03 Fujitsu Ltd カラーフィルタ及び液晶表示装置
CN107799572A (zh) * 2017-10-20 2018-03-13 武汉华星光电半导体显示技术有限公司 一种有机发光二极管显示器
CN108666349A (zh) * 2018-05-09 2018-10-16 深圳市华星光电技术有限公司 彩色滤光基板及其制作方法与woled显示器
CN109148718A (zh) * 2018-08-20 2019-01-04 武汉华星光电半导体显示技术有限公司 有机发光显示面板及其制造方法
US20190148459A1 (en) * 2017-11-14 2019-05-16 Boe Technology Group Co., Ltd. Organic Light Emitting Diode Device, Method for Manufacturing the Same and Display Device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07253509A (ja) * 1994-03-16 1995-10-03 Fujitsu Ltd カラーフィルタ及び液晶表示装置
CN107799572A (zh) * 2017-10-20 2018-03-13 武汉华星光电半导体显示技术有限公司 一种有机发光二极管显示器
US20190148459A1 (en) * 2017-11-14 2019-05-16 Boe Technology Group Co., Ltd. Organic Light Emitting Diode Device, Method for Manufacturing the Same and Display Device
CN108666349A (zh) * 2018-05-09 2018-10-16 深圳市华星光电技术有限公司 彩色滤光基板及其制作方法与woled显示器
CN109148718A (zh) * 2018-08-20 2019-01-04 武汉华星光电半导体显示技术有限公司 有机发光显示面板及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114267807A (zh) * 2021-12-15 2022-04-01 武汉华星光电半导体显示技术有限公司 一种显示面板
CN114267807B (zh) * 2021-12-15 2023-08-22 武汉华星光电半导体显示技术有限公司 一种显示面板

Also Published As

Publication number Publication date
CN110610963A (zh) 2019-12-24
US20210408505A1 (en) 2021-12-30

Similar Documents

Publication Publication Date Title
US11832495B2 (en) Display apparatus and manufacturing method therefor
WO2021031302A1 (zh) 子像素结构、有机发光二极管显示屏及其制造方法
JP6987228B2 (ja) 有機発光ダイオード表示装置及びその製造方法
WO2017018041A1 (ja) 表示装置
US20230247887A1 (en) Display panel and manufacturing method thereof
WO2015192517A1 (zh) 彩膜基板及其制备方法、有机发光显示面板和显示装置
WO2015062297A1 (zh) 发光器件、阵列基板、显示装置及发光器件的制造方法
US11502274B2 (en) Display substrate and preparation method thereof, and display apparatus
US9559154B2 (en) Display device keeping a distance between a light emitting layer and a counter substrate uniformly
WO2021233002A1 (zh) 显示基板及其制作方法、显示装置
WO2020001061A1 (zh) 显示基板及制造方法、显示装置
WO2021189475A1 (zh) 显示基板及其制作方法、显示装置
WO2019127794A1 (zh) 镜面显示装置及其制作方法
WO2021142886A1 (zh) 一种显示面板、其制备方法及显示装置
WO2021196377A1 (zh) 一种显示面板及制程方法
WO2021093028A1 (zh) 彩膜基板及其制备方法
WO2019227669A1 (zh) 显示面板及显示装置
TW202014769A (zh) 顯示面板及其製造方法
CN112071969A (zh) 一种量子点柔性led显示装置及其制备方法
WO2020098152A1 (zh) 柔性显示面板的制作方法及柔性显示面板
WO2020206773A1 (zh) 有机发光二极管器件及其制作方法
US10503064B2 (en) Method for manufacturing color filter substrate
JP2022541962A (ja) 表示パネル及びその製造方法
WO2020098722A1 (zh) 一种全彩化显示模块及其制作方法
WO2020237875A1 (zh) 一种显示面板及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19942053

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19942053

Country of ref document: EP

Kind code of ref document: A1