WO2021027388A1 - 光刻工艺的对准方法 - Google Patents

光刻工艺的对准方法 Download PDF

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Publication number
WO2021027388A1
WO2021027388A1 PCT/CN2020/096144 CN2020096144W WO2021027388A1 WO 2021027388 A1 WO2021027388 A1 WO 2021027388A1 CN 2020096144 W CN2020096144 W CN 2020096144W WO 2021027388 A1 WO2021027388 A1 WO 2021027388A1
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alignment mark
functional layer
alignment
groove
functional
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PCT/CN2020/096144
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English (en)
French (fr)
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何伟明
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浙江驰拓科技有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Definitions

  • the present invention relates to the technical field of photolithography process, in particular to an alignment method of photolithography process.
  • the second functional layer pattern and the first functional pattern need to maintain accurate alignment to ensure the normal operation of the device.
  • the alignment mark is placed on the first function pattern mask, and the corresponding alignment mark is left on the silicon wafer through the first function pattern lithography and etching.
  • the alignment of the upper and lower layer patterns is completed by detecting the position of the alignment mark of the first functional pattern.
  • the above method has two obvious defects: First, the alignment of the second functional layer and the first functional pattern cannot be directly monitored. It can only be measured by the relative position between the second functional layer, the transition mask and the first functional pattern.
  • the alignment method of the photolithography process provided by the present invention can accurately realize the alignment in the photolithography process.
  • the present invention provides an alignment method for a photolithography process, including:
  • first functional graphic Provides a first functional graphic, an alignment mark, and a filling medium for filling the gap between the first functional graphic and the alignment mark.
  • the upper surface of the first functional graphic, the alignment mark and the filling medium are all in the first plane ;
  • the alignment mark is detected according to the conformal topology, and the photolithography and etching of the second functional layer are completed.
  • a photoresist is formed on the first plane
  • the part of the marking area except for the alignment mark is etched to form a groove surrounding the marking area on the filling medium.
  • self-aligned etching is performed using the etching selection ratio of the alignment mark and the filling medium.
  • the depth of the groove is greater than the thickness of the second functional pattern.
  • the material forming the second functional layer is an opaque material.
  • the alignment marks include lithography machine alignment marks and overprint marks.
  • a reflective light source with a conformal topology structure at the groove corresponding to the second functional layer is used to detect the alignment mark.
  • the first functional pattern and the alignment mark are formed on the substrate through an etching or stripping process.
  • the distance between the edge of the groove and the edge of the alignment mark is not less than 0.5 micrometers.
  • a groove is formed around the alignment mark.
  • a conformal topology structure is formed on the groove.
  • the structure can determine the position of the alignment mark, so that direct alignment and overlay monitoring can be realized between the second functional layer and the first functional pattern, which greatly reduces the complexity of process control and improves the accuracy and stability of overlay;
  • the process requirements are low, which can be implemented on the I-line machine, which greatly reduces the process cost.
  • FIG. 1 is a schematic diagram of a covering mark mask in a photolithography process alignment method according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of an embodiment of the present invention after a photolithography process alignment method etches a filling medium to form a trench;
  • FIG. 3 is a schematic diagram of a second functional layer formed by a photolithography process alignment method according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of a photolithography process alignment method covering a second mask according to an embodiment of the present invention
  • FIG. 5 is a schematic diagram of the second functional layer being etched by the photolithography process alignment method according to an embodiment of the present invention.
  • the embodiment of the present invention provides a photolithography process alignment method, as shown in FIGS. 1-5, including:
  • step S1 it further includes the following steps:
  • S11 Provide a substrate, and form a first functional layer on the substrate;
  • the first functional layer is the bottom electrode layer
  • the exposure method may be contact exposure, proximity exposure or projection exposure.
  • the first functional pattern 2 is the bottom electrode pattern.
  • the alignment marks in this embodiment include photolithography marks and overprint marks.
  • the first functional pattern 2 is a bottom electrode pattern
  • S15 Fill the filling medium 3 in the area outside the first functional pattern 2 and the alignment mark 1, and flatten the first functional pattern 2, the alignment mark 1, and the filling medium 3 to make the first functional pattern 2,
  • the upper surfaces of the alignment mark 1 and the filling medium 3 are in the first plane, forming a base.
  • the filling medium 3 can be silicon oxide, silicon nitride or aluminum oxide.
  • One of the above three filling media 3 can be selected, or a mixture of multiple types can be selected, or different filling media 3 can be used for filling in different areas.
  • the above S2 step further includes the following steps:
  • S22 Use a marking mask 4 to cover the photoresist, and expose and develop the photoresist to form a marking area; the marking area completely covers the alignment mark;
  • the photoresist is exposed and developed to make a mark area appear in the photoresist corresponding to the alignment mark 1.
  • the alignment mark 1 includes a photolithography mark and an overprint mark.
  • self-aligned etching is performed using the etching selection ratio of the alignment mark 1 and the filling medium 3.
  • the distance between the edge of the groove and the edge of the alignment mark is not less than 0.5 microns.
  • the etching depth of the groove 31 is controlled to be greater than the thickness of the second functional layer 5.
  • the second functional layer 5 can form a good conformal topology at the groove 31, which is beneficial to the recognition of the alignment mark 1.
  • the second functional layer 5 is stacked on the first plane. Since the filling medium 3 has a groove 31 opening in the first plane, the second functional layer 5 will form a conformal topology 51 after stacking, that is Grooves will also be formed.
  • the material forming the second functional layer 5 is an opaque material.
  • the second functional layer 5 is adopted as a magnetic tunnel junction layer.
  • the above S4 step further includes the following steps:
  • the second functional layer 5 is used to detect the alignment mark 1 by using the reflected light source of the conformal topology structure 51 at the groove 31.
  • S43 Expose and develop the photoresist on the second functional layer 5 so that the pattern of the second functional layer 5 appears on the photoresist.
  • the exposure of the photoresist in this step can also select contact exposure, close exposure or projection exposure according to needs.
  • dry etching or wet etching can be selected during the etching process.
  • a groove 31 is formed around the alignment mark 1, and when the second functional layer 5 is formed, a conformal topology structure is formed on the groove 31.
  • the position of the alignment mark 1 can be determined, so that the second functional layer 5 and the first functional pattern 2 can be directly aligned and overprinted monitoring, which greatly reduces the complexity of process control
  • the process requirements are low, which can be implemented on an I-line machine, greatly reducing the process cost.
  • This embodiment provides a photolithography process alignment method.
  • the process of performing photolithography on the top electrode of a magnetic random access memory is taken as an example for description, including:
  • a base including a substrate and a first functional pattern, an alignment mark and a filling medium formed on the substrate, and the upper surface of the first functional pattern, the alignment mark and the filling medium are all on the first In a plane
  • the above S1 step further includes the following steps:
  • S11 Provide a substrate, and form a first functional layer on the substrate;
  • the substrate includes a bottom electrode pattern and a supporting device for supporting the bottom electrode.
  • the first functional layer of this embodiment is the magnetic tunnel junction layer.
  • the exposure method may be contact exposure, proximity exposure or projection exposure.
  • the first functional pattern is the magnetic tunnel junction pattern.
  • the alignment marks in this embodiment include photolithography marks and overprint marks.
  • the first functional pattern is a magnetic tunnel junction pattern
  • S15 Fill the filling medium in the area outside the first functional graphic and the alignment mark, and flatten the first functional graphic, the alignment mark, and the filling medium to make the first functional graphic, the alignment mark and the filling medium smooth
  • the upper surface forms the base in the first plane.
  • the filling medium can be silicon oxide, silicon nitride or aluminum oxide.
  • One of the above three filling media can be selected, or a mixture of multiple types can be selected, or different filling media can be used for filling in different areas.
  • the above S2 step further includes the following steps:
  • the photoresist is exposed and developed to make a mark area appear at the photoresist corresponding to the alignment mark.
  • the alignment mark includes a photolithography mark and an overprint mark.
  • etching the filling medium in the marking area dry etching or wet etching may be used.
  • self-aligned etching is performed using the etching selection ratio of the alignment mark and the filling medium.
  • the distance between the edge of the groove and the edge of the alignment mark is not less than 0.5 ⁇ m.
  • the etching depth of the groove is controlled to be greater than the thickness of the second functional layer.
  • the second functional layer can form a good conformal topology at the groove, which is beneficial to the recognition of the alignment mark.
  • the second functional layer is stacked on the first plane. Since the filling medium 3 has a groove opening in the first plane, the second functional layer will form a conformal topology after stacking, that is, concave groove.
  • the material forming the second functional layer is an opaque material.
  • the second functional layer is used as the top electrode layer.
  • the above S4 step further includes the following steps:
  • S42 align the second mask with the second functional layer pattern by detecting the conformal topology, that is, detecting the groove of the second functional layer;
  • the second functional layer is used to detect the alignment mark by using a reflected light source of the conformal topology structure at the groove corresponding to the second functional layer.
  • the exposure of the photoresist in this step can also select contact exposure, close exposure or projection exposure according to needs.
  • dry etching or wet etching can be selected during the etching process.
  • a groove is formed around the alignment mark.
  • a conformal topology structure is formed on the groove.
  • the topological structure can determine the position of the alignment mark, so that direct alignment and over-engraving monitoring can be realized between the second functional layer and the first functional pattern, which greatly reduces the complexity of process control and improves the accuracy and stability of over-engraving
  • the process requirements are low, and it can be implemented on the I-line machine, which greatly reduces the process cost.
  • An embodiment of the present invention provides an alignment method for a photolithography process, including:
  • a base including a substrate and a first functional pattern, an alignment mark and a filling medium formed on the substrate, and the upper surface of the first functional pattern, the alignment mark and the filling medium are all on the first In a plane
  • the above S1 step further includes the following steps:
  • S12 Expose and develop the photoresist by using the first mask with the alignment mark and the first functional pattern, and remove the photoresist at the alignment mark and the first functional pattern;
  • the exposure method may be contact exposure, proximity exposure or projection exposure.
  • the first functional pattern is the bottom electrode pattern.
  • the alignment marks in this embodiment include photolithography marks and overprint marks.
  • the first functional pattern is a bottom electrode pattern
  • S15 Fill the filling medium in the area outside the first functional graphic and the alignment mark, and flatten the first functional graphic, the alignment mark, and the filling medium to make the first functional graphic, the alignment mark and the filling medium smooth
  • the upper surface is in the first plane, forming a base.
  • the filling medium can be silicon oxide, silicon nitride or aluminum oxide.
  • One of the above three filling media can be selected, or a mixture of multiple types can be selected, or different filling media can be used for filling in different areas.
  • the above S2 step further includes the following steps:
  • the photoresist is exposed and developed to make a mark area appear at the photoresist corresponding to the alignment mark.
  • the alignment mark includes a photolithography mark and an overprint mark.
  • etching the filling medium in the marking area dry etching or wet etching may be used.
  • self-aligned etching is performed using the etching selection ratio of the alignment mark and the filling medium.
  • the distance between the edge of the groove and the edge of the alignment mark is not less than 0.5 ⁇ m. .
  • the etching depth of the groove is controlled to be greater than the thickness of the second functional layer.
  • the second functional layer can form a good conformal topology at the groove, which is beneficial to the recognition of the alignment mark.
  • the second functional layer is stacked on the first plane. Since the filling medium has grooves opening in the first plane, the second functional layer will form a conformal topology after stacking, that is, grooves will also be formed. .
  • the material forming the second functional layer is an opaque material.
  • the second functional layer is adopted as a magnetic tunnel junction layer.
  • the above S4 step further includes the following steps:
  • S42 align the second mask with the second functional layer pattern by detecting the conformal topology, that is, detecting the groove of the second functional layer;
  • the second functional layer is used to detect the alignment mark by using a reflected light source of the conformal topology structure at the groove corresponding to the second functional layer.
  • the exposure of the photoresist in this step can also select contact exposure, close exposure or projection exposure according to needs.
  • dry etching or wet etching can be selected during the etching process.
  • This embodiment shows a scene where the photolithographic alignment is achieved on the substrate on which the first functional pattern and the alignment mark are formed in the lift-off process.
  • a groove is formed around the alignment mark.
  • a conformal topology structure is formed on the groove.
  • direct alignment and overlay monitoring can be realized between the second functional layer and the first functional pattern, which greatly reduces the complexity of process control, and improves the accuracy of overlay Stability;
  • the process requirements are low, and it can be implemented on the I-line machine, greatly reducing the process cost.

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Abstract

一种光刻工艺的对准方法，包括：提供一基底，基底包括衬底以及在衬底上形成的第一功能图形（2）、对位标记（1）和填充介质（3），第一功能图形（2）、对位标记（1）和填充介质（3）的上表面均在第一平面内；在对位标记（1）的外侧形成凹槽（31），凹槽（31）的开口在第一平面上；在第一平面上形成第二功能层（5），第二功能层（5）在凹槽（31）上形成随形拓扑结构（51）；依据随形拓扑结构（51）侦测对位标记（1），完成对第二功能层（5）的光刻和刻蚀。通过在对位标记（1）周围形成凹槽结构（31），并在第二功能层（5）上形成随形拓扑结构（51），能够通过随形拓扑结构（51）识别不透明薄膜下的对位标记（1）位置，实现精准的光刻对位。

Description

光刻工艺的对准方法 技术领域
本发明涉及光刻工艺技术领域，尤其涉及一种光刻工艺的对准方法。
背景技术
在采用光刻工艺生产存储器件时，第二功能层图形与第一功能图形之间需要保持精确的对位，才能确保器件正常的工作。为实现上述精确对位的目标，在第一功能图形掩膜版上放置对位标记，通过第一功能图形光刻和刻蚀把相应对位标记留在硅片上，在后续的第二功能层光刻工艺过程中通过侦测第一功能图形的对位标记的位置完成上下层图形的对准。在该工艺过程中，由于第一功能图形的对位标记图形已经通过化学机械抛光工艺进行平坦化，非透明的第二功能层金属薄膜沉积后，第二功能层光刻曝光工艺时光刻机无法侦测到BE的对位标记光学信号，最终导致无法完成第二功能层光刻工艺。
为解决上述问题，通常在沉积磁隧道薄膜之前，增加一张过渡掩膜，把对位标记和套刻标记制作到氧化物介质中，第二功能层薄膜沉积之后，上述标记处仍然保持表面凹凸结构，因此可以为第二功能层光刻时提供对准信号和套刻信号。但上述方法存在两个明显的缺陷：一是第二功能层与第一功能图形的对位无法直接监测，只能通过第二功能层，过渡掩膜和第一功能图形之间的相对位置来间接完成，增加了套刻性能的不稳定性和在线控制的复杂性；二是因为过渡掩膜起到第二功能层和第一功能图形之间的桥梁作用，要求过渡掩膜需要具备较高的掩膜等级和工艺要求，普通的I线光刻机无法满足工艺要求。
发明内容
本发明提供的光刻工艺的对准方法，能够精确的实现光刻工艺中的对准。
第一方面，本发明提供一种光刻工艺的对准方法，包括：
提供第一功能图形、对位标记以及用于填充第一功能图形和对位标记之间间隙的填充介质，所述第一功能图形、对位标记和填充介质的上表面均在第一平面内；
在所述填充介质上形成凹槽，所述凹槽用于暴露所述对位标记的侧壁；
在所述第一平面上形成第二功能层，所述第二功能层在所述凹槽上形成随形拓扑结构；
依据所述随形拓扑结构侦测所述对位标记，完成对所述第二功能层的光刻和刻蚀。
可选地，在第一平面上形成光刻胶；
对所述光刻胶进行曝光显影，以形成标记区域；所述标记区域完全覆盖所述对位标记；
将所述标记区域除对位标记外的部分刻蚀，以在所述填充介质上形成围绕所述标记区域的凹槽。
可选地，刻蚀时，利用对位标记和填充介质的刻蚀选择比进行自对准刻蚀。
可选地，所述凹槽的深度大于所述第二功能图形的厚度。
可选地，形成第二功能层的材料为不透明材料。
可选地，所述对位标记包括光刻机对准标记和套刻标记。
可选地，所述第二功能层光刻过程中，利用所述第二功能层对应所述凹槽处的随形拓扑结构的反射光源侦测对位标记。
可选地，所述第一功能图形和对位标记通过刻蚀或剥离工艺形成在衬底上。
可选地，所述凹槽的边缘与所述对位标记的边缘之间的距离不小于0.5微 米。
本发明光刻工艺的对准方法中，在对位标记的周围形成凹槽，在第二功能层形成时，会在凹槽上形成随形的拓扑结构，这样，通过侦测该随形拓扑结构即可确定对位标记的位置，从而第二功能层与第一功能图形之间可以实现直接对准和套刻监控，大大降低了工艺控制的复杂程度，提高了套刻精度和稳定性；另外，本发明中在凹槽的形成过程中，工艺要求低，可以在I线机台上实现，极大降低了工艺成本。
附图说明
图1为本发明一实施例光刻工艺对准方法中覆盖标记掩膜的示意图；
图2为本发明一实施例光刻工艺对准方法对填充介质刻蚀形成沟槽后的示意图；
图3为本发明一实施例光刻工艺对准方法形成第二功能层后的示意图；
图4为本发明一实施例光刻工艺对准方法覆盖第二掩膜的示意图；
图5为本发明一实施例光刻工艺对准方法对第二功能层刻蚀完成的示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
本发明实施例提供一种光刻工艺的对准方法，如图1-5所示，包括：
S1，提供第一功能图形2、对位标记1以及用于填充第一功能图形和对位标记之间间隙的填充介质3，所述第一功能图形2、对位标记1和填充介质3的上表面均在第一平面内；
在上述步骤S1中，进一步包括如下步骤：
S11：提供一衬底，在衬底上形成第一功能层；
在本实施例中，第一功能层为底电极层；
S12：在第一功能层上涂光刻胶；
S13：采用具有与对位标记1和第一功能图形2对应图形的第一掩膜对光刻胶进行曝光和显影，在光刻胶上形成与对位标记1和第一功能图形2对应的图形；
本实施例中，曝光方式可以选用接触式曝光、接近式曝光或者投影式曝光。
本实施例中，第一功能图形2即为底电极图形。
可选地，本实施例中的对位标记包括光刻标记和套刻标记。
S14：对第一功能层进行刻蚀并去除光刻胶，此时第一功能层仅剩余第一功能图形2和对位标记1；
在本实施例中，第一功能图形2为底电极图形；
S15：将填充介质3填充在第一功能图形2和对位标记1之外的区域，并对第一功能图形2、对位标记1和填充介质3进行平坦化，使第一功能图形2、对位标记1和填充介质3的上表面在第一平面内，形成基底。
在本实施例中，填充介质3可以选用氧化硅、氮化硅或氧化铝。上述三种填充介质3可以选用其中一种，也可以选用多种的混合物，或者，还可以在不同区域采用不同填充介质3进行填充。
S2，在所述填充介质3上形成凹槽31，所述凹槽31用于暴露所述对位标 记1的侧壁；
上述S2步骤进一步包括如下步骤：
S21：在所述第一表面涂光刻胶；
S22：采用一标记掩膜4覆盖光刻胶，对光刻胶进行曝光和显影，以形成标记区域；所述标记区域完全覆盖所述对位标记；
在本步骤中，将光刻胶进行曝光显影处理，使光刻胶对应对位标记1处出现一标记区域。
作为本实施例的可选实施方式，所述对位标记1包括光刻标记和套刻标记。
S23：对标记区域的填充介质3进行刻蚀，使标记区域围绕对位标记1形成凹槽31；
对标记区域填充介质3进行刻蚀时，可以采用干法刻蚀，也可以采用湿法刻蚀。
作为本实施例的可选实施方式，刻蚀时，利用对位标记1和填充介质3的刻蚀选择比进行自对准刻蚀。
作为本实施例的可选实施方式，凹槽的边缘与对位标记的边缘之间的距离不小于0.5微米。
作为本实施例的可选实施方式，控制所述凹槽31的刻蚀深度大于所述第二功能层5的厚度。该实施方式下，当完成第二功能层5的层叠时，第二功能层5能在凹槽31处形成良好的随形拓扑结构，有利于对对位标记1的识别。
S24：在完成刻蚀后，将剩余的光刻胶进行剥离和去除。
S3，在所述第一平面上形成第二功能层5，所述第二功能层5在所述凹槽31上形成随形拓扑结构51；
在本步骤中，在第一平面上堆叠第二功能层5，由于填充介质3上有开口在第一平面的凹槽31，第二功能层5在堆叠后会形成随形拓扑结构51，即也会形成凹槽。
作为本实施例的可选实施方式，形成第二功能层5的材料为不透明材料。例如，在本实施例中采用第二功能层5为磁隧道结层。
S4，依据所述随形拓扑结构51侦测所述对位标记1，完成对所述第二功能层5的刻蚀；
上述S4步骤进一步包括如下步骤：
S41：在第二功能层5上涂光刻胶，
S42：通过侦测随形拓扑结构51，即侦测第二功能层5的凹槽，将具有第二功能层5图形的第二掩膜6进行对准；
作为可选实施方式，利用所述第二功能层5对应所述凹槽31处的随形拓扑结构51的反射光源侦测对位标记1。
S43：对第二功能层5上的光刻胶进行曝光和显影，使光刻胶上出现第二功能层5的图形。
本步骤中的对光刻胶的曝光同样可以根据需要选择接触曝光、接近曝光或投影曝光。
S44：依据光刻胶上的图形对第二功能层5进行刻蚀，刻蚀完成后第二功能层5仅剩余第二功能图形52部分。
在本步骤中，刻蚀过程中可以选择干法刻蚀，也可以选择湿法刻蚀。
本实施例提供的光刻工艺的对准方法中，在对位标记1的周围形成凹槽31，在第二功能层5形成时，会在凹槽31上形成随形的拓扑结构，这样，通过侦测该随形拓扑结构51即可确定对位标记1的位置，从而第二功能层5与 第一功能图形2之间可以实现直接对准和套刻监控，大大降低了工艺控制的复杂程度，提高了套刻精度和稳定性；另外，本实施例中在凹槽31的形成过程中，工艺要求低，可以在I线机台上实现，极大降低了工艺成本。
实施例2
本实施例提供一种光刻工艺的对准方法，以磁性随机存储器的顶电极进行光刻的过程为例进行说明，包括：
S1，提供一基底，所述基底包括衬底以及在衬底上形成的第一功能图形、对位标记和填充介质，所述第一功能图形、对位标记和填充介质的上表面均在第一平面内；
上述S1步骤进一步包括如下步骤：
S11：提供一衬底，在衬底上形成第一功能层；
在本实施例中，衬底为包括了底电极图形以及用于承托底电极的承托器件。而本实施例的第一功能层即为磁隧道结层。
S12：在第一功能层上涂光刻胶；
S13：采用具有对位标记和第一功能图形的第一掩膜对光刻胶进行曝光和显影，在光刻胶上形成对位标记和第一功能图形的；
本实施例中，曝光方式可以选用接触式曝光、接近式曝光或者投影式曝光。
本实施例中，第一功能图形即为磁隧道结图形。
可选地，本实施例中的对位标记包括光刻标记和套刻标记。
S14：对第一功能层进行刻蚀并去除光刻胶，此时第一功能层仅剩余第一功能图形和对位标记；
在本实施例中，第一功能图形为磁隧道结图形；
S15：将填充介质填充在第一功能图形和对位标记之外的区域，并对第一 功能图形、对位标记和填充介质进行平坦化，使第一功能图形、对位标记和填充介质的上表面在第一平面内即形成基底。
在本实施例中，填充介质可以选用氧化硅、氮化硅或氧化铝。上述三种填充介质可以选用其中一种，也可以选用多种的混合物，或者，还可以在不同区域采用不同填充介质进行填充。
S2，在所述填充介质上形成凹槽，所述凹槽用于暴露所述对位标记的侧壁；
上述S2步骤进一步包括如下步骤：
S21：在所述第一表面涂光刻胶；
S22：对光刻胶进行曝光和显影，以在光刻胶表面形成一标记区域；标记区域完全覆盖对位标记
在本步骤中，将光刻胶进行曝光显影处理，使光刻胶对应对位标记处出现一标记区域。
作为本实施例的可选实施方式，所述对位标记包括光刻标记和套刻标记。
S23：对标记区域的填充介质进行刻蚀，以形成围绕对位标记的凹槽31；
对标记区域填充介质进行刻蚀时，可以采用干法刻蚀，也可以采用湿法刻蚀。
作为本实施例的可选实施方式，刻蚀时，利用对位标记和填充介质的刻蚀选择比进行自对准刻蚀。
作为本实施例的可选实施方式，所述凹槽的边缘与所述对位标记的边缘之间的距离不小于0.5微米。
作为本实施例的可选实施方式，控制所述凹槽的刻蚀深度大于所述第二功能层的厚度。该实施方式下，当完成第二功能层的层叠时，第二功能层在凹槽处能够形成良好的随形拓扑结构，有利于对对位标记的识别。
S24：在完成刻蚀后，将剩余的光刻胶进行剥离和去除。
S3，在所述第一平面上形成第二功能层，所述第二功能层在所述凹槽上形成随形拓扑结构；
在本步骤中，在第一平面上堆叠第二功能层，由于填充介质3上有开口在第一平面的凹槽，第二功能层在堆叠后会形成随形拓扑结构，即也会形成凹槽。
作为本实施例的可选实施方式，形成第二功能层的材料为不透明材料。例如，在本实施例中采用第二功能层为顶电极层。
S4，依据所述随形拓扑结构侦测所述对位标记，完成对所述第二功能层的光刻和刻蚀；
上述S4步骤进一步包括如下步骤：
S41：在第二功能层上涂光刻胶，
S42：通过侦测随形拓扑结构，即侦测第二功能层的凹槽，将具有第二功能层图形的第二掩膜进行对准；
作为可选实施方式，利用所述第二功能层对应所述凹槽处的随形拓扑结构的反射光源侦测对位标记。
S43：对第二功能层上的光刻胶进行曝光和显影，使光刻胶上出现第二功能层的图形。
本步骤中的对光刻胶的曝光同样可以根据需要选择接触曝光、接近曝光或投影曝光。
S44：依据光刻胶上的图形对第二功能层进行刻蚀，刻蚀完成后第二功能层仅剩余第二功能图形部分。
在本步骤中，刻蚀过程中可以选择干法刻蚀，也可以选择湿法刻蚀。
本实施例光刻工艺的对准方法中，在对位标记的周围形成凹槽，在第二功 能层形成时，会在凹槽上形成随形的拓扑结构，这样，通过侦测该随形拓扑结构即可确定对位标记的位置，从而第二功能层与第一功能图形之间可以实现直接对准和套刻监控，大大降低了工艺控制的复杂程度，提高了套刻精度和稳定性；另外，本实施例中在凹槽的形成过程中，工艺要求低，可以在I线机台上实现，极大降低了工艺成本。
实施例3
本发明实施例提供一种光刻工艺的对准方法，包括：
S1，提供一基底，所述基底包括衬底以及在衬底上形成的第一功能图形、对位标记和填充介质，所述第一功能图形、对位标记和填充介质的上表面均在第一平面内；
上述S1步骤进一步包括如下步骤：
S11：提供一衬底，在衬底上涂光刻胶；
S12：采用具有对位标记和第一功能图形的第一掩膜对光刻胶进行曝光和显影，对位标记和第一功能图形处的光刻胶被去除；
本实施例中，曝光方式可以选用接触式曝光、接近式曝光或者投影式曝光。
本实施例中，第一功能图形即为底电极图形。
可选地，本实施例中的对位标记包括光刻标记和套刻标记。
S13：在光刻胶层上形成第一功能层，只有在对位标记和第一功能图形处区域的第一功能层与衬底形成接触；
在本实施例中，第一功能图形为底电极图形；
S14：将光刻胶进行剥离，在对位标记和第一功能图形之外的部分的一功能层也被剥离，从而在衬底上仅剩对位标记和第一功能图形。
S15：将填充介质填充在第一功能图形和对位标记之外的区域，并对第一 功能图形、对位标记和填充介质进行平坦化，使第一功能图形、对位标记和填充介质的上表面在第一平面内，形成基底。
在本实施例中，填充介质可以选用氧化硅、氮化硅或氧化铝。上述三种填充介质可以选用其中一种，也可以选用多种的混合物，或者，还可以在不同区域采用不同填充介质进行填充。
S2，在所述填充介质上形成凹槽，所述凹槽用于暴露所述对位标记的侧壁；
上述S2步骤进一步包括如下步骤：
S21：在所述第一表面涂光刻胶；
S22：对光刻胶进行曝光和显影，在光刻胶表面形成一标记区域；标记区域完全覆盖对位标记；
在本步骤中，将光刻胶进行曝光显影处理，使光刻胶对应对位标记处出现一标记区域。
作为本实施例的可选实施方式，所述对位标记包括光刻标记和套刻标记。
S23：对标记区域的填充介质进行刻蚀，以形成围绕对位标记的凹槽；
对标记区域填充介质进行刻蚀时，可以采用干法刻蚀，也可以采用湿法刻蚀。
作为本实施例的可选实施方式，刻蚀时，利用对位标记和填充介质的刻蚀选择比进行自对准刻蚀。
作为本实施例的可选实施方式，所述凹槽的边缘与所述对位标记的边缘之间的距离不小于0.5微米。。
作为本实施例的可选实施方式，控制所述凹槽的刻蚀深度大于所述第二功能层的厚度。该实施方式下，当完成第二功能层的层叠时，第二功能层在凹槽处能形成良好的随形拓扑结构，有利于对对位标记的识别。
S24：在完成刻蚀后，将剩余的光刻胶进行剥离和去除。
S3，在所述第一平面上形成第二功能层，所述第二功能层在所述凹槽上形成随形拓扑结构；
在本步骤中，在第一平面上堆叠第二功能层，由于填充介质上有开口在第一平面的凹槽，第二功能层在堆叠后会形成随形拓扑结构，即也会形成凹槽。
作为本实施例的可选实施方式，形成第二功能层的材料为不透明材料。例如，在本实施例中采用第二功能层为磁隧道结层。
S4，依据所述随形拓扑结构侦测所述对位标记，完成对所述第二功能层的光刻和刻蚀；
上述S4步骤进一步包括如下步骤：
S41：在第二功能层上涂光刻胶，
S42：通过侦测随形拓扑结构，即侦测第二功能层的凹槽，将具有第二功能层图形的第二掩膜进行对准；
作为可选实施方式，利用所述第二功能层对应所述凹槽处的随形拓扑结构的反射光源侦测对位标记。
S43：对第二功能层上的光刻胶进行曝光和显影，使光刻胶上出现第二功能层的图形。
本步骤中的对光刻胶的曝光同样可以根据需要选择接触曝光、接近曝光或投影曝光。
S44：依据光刻胶上的图形对第二功能层进行刻蚀，刻蚀完成后第二功能层仅剩余第二功能图形部分。
在本步骤中，刻蚀过程中可以选择干法刻蚀，也可以选择湿法刻蚀。
本实施例展示了在剥离工艺上形成第一功能图形和对位标记的衬底上实 现光刻对齐的场景。本实施例提供的光刻工艺的对准方法中，在对位标记的周围形成凹槽，在第二功能层形成时，会在凹槽上形成随形的拓扑结构，这样，通过侦测该随形拓扑结构即可确定对位标记的位置，从而第二功能层与第一功能图形之间可以实现直接对准和套刻监控，大大降低了工艺控制的复杂程度，提高了套刻精度和稳定性；另外，本实施例中在凹槽的形成过程中，工艺要求低，可以在I线机台上实现，极大降低了工艺成本。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。

Claims (9)

  1. 一种光刻工艺的对准方法，其特征在于，包括：
    提供第一功能图形、对位标记以及用于填充第一功能图形和对位标记之间间隙的填充介质，所述第一功能图形、对位标记和填充介质的上表面均在第一平面内；
    在所述填充介质上形成凹槽，所述凹槽用于暴露所述对位标记的侧壁；
    在所述第一平面上形成第二功能层，所述第二功能层在所述凹槽上形成随形拓扑结构；
    依据所述随形拓扑结构侦测所述对位标记，完成对所述第二功能层的光刻和刻蚀。
  2. 如权利要求1所述光刻工艺的对准方法，其特征在于：所述凹槽的形成包括：在第一平面上形成光刻胶；
    对所述光刻胶进行曝光显影，以形成标记区域；所述标记区域完全覆盖所述对位标记；
    将所述标记区域除对位标记外的部分刻蚀，以在所述填充介质上形成围绕所述标记区域的凹槽。
  3. 如权利要求2所述光刻工艺的对准方法，其特征在于：刻蚀时，利用对位标记和填充介质的刻蚀选择比进行自对准刻蚀。
  4. 如权利要求1所述光刻工艺的对准方法，其特征在于：所述凹槽的深度大于所述第二功能图形的厚度。
  5. 如权利要求1所述光刻工艺的对准方法，其特征在于：形成第二功能层的材料为不透明材料。
  6. 如权利要求1所述光刻工艺的对准方法，其特征在于：所述对位标记包括光刻机对准标记和套刻标记。
  7. 如权利要求1所述光刻工艺的对准方法，其特征在于：所述第二功能层光刻过程中，利用所述第二功能层对应所述凹槽处的随形拓扑结构的反射光源侦测对位标记。
  8. 如权利要求1所述光刻工艺的对准方法，其特征在于：所述第一功能图形和对位标记通过刻蚀或剥离工艺形成在衬底上。
  9. 如权利要求1所述光刻工艺的对准方法，其特征在于：所述凹槽的边缘与所述对位标记的边缘之间的距离不小于0.5微米。
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