WO2021020447A1 - 電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法 - Google Patents

電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法 Download PDF

Info

Publication number
WO2021020447A1
WO2021020447A1 PCT/JP2020/029070 JP2020029070W WO2021020447A1 WO 2021020447 A1 WO2021020447 A1 WO 2021020447A1 JP 2020029070 W JP2020029070 W JP 2020029070W WO 2021020447 A1 WO2021020447 A1 WO 2021020447A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating layer
electronic element
metal layer
conductor
mounting substrate
Prior art date
Application number
PCT/JP2020/029070
Other languages
English (en)
French (fr)
Inventor
明彦 舟橋
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2021535388A priority Critical patent/JP7212783B2/ja
Priority to CN202080053636.6A priority patent/CN114175233A/zh
Priority to US17/630,194 priority patent/US20220270958A1/en
Publication of WO2021020447A1 publication Critical patent/WO2021020447A1/ja

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48229Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48235Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399Material
    • H01L2224/83486Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399Material
    • H01L2224/83486Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/83487Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399Material
    • H01L2224/8349Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862Heat curing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85455Nickel (Ni) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16251Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/163Connection portion, e.g. seal
    • H01L2924/16315Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/163Connection portion, e.g. seal
    • H01L2924/1632Disposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/171Frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283After-treatment of the printed patterns, e.g. sintering or curing methods
    • H05K3/1291Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4638Aligning and fixing the circuit boards before lamination; Detecting or measuring the misalignment after lamination; Aligning external circuit patterns or via connections relative to internal circuits

Definitions

  • the present disclosure relates to a method for manufacturing an electronic element mounting substrate, an electronic device, an electronic module, and an electronic element mounting substrate on which an electronic element or the like is mounted.
  • a substrate for mounting an electronic element which includes an insulating layer and a wiring layer and has a through conductor, is known.
  • Patent Document 1 As a method of manufacturing a substrate for mounting an electronic element, a laminate including an insulating layer and a wiring layer is formed in order to improve the electrical connection of the through conductors of the upper and lower layers. , A method of forming a through hole in the through hole after forming the through hole with a laser is described (see Japanese Patent Application Laid-Open No. 2017-183337).
  • the electronic device mounting substrate includes a first insulating layer, a second insulating layer, a first metal layer, and a through conductor.
  • the first insulating layer and the second insulating layer are located side by side in the first direction.
  • the first metal layer is located between the first insulating layer and the second insulating layer.
  • the through conductor extends in the first direction from the first insulating layer to the second insulating layer.
  • the first metal layer has a first portion located away from the through conductor and a second portion in contact with the through conductor.
  • the thickness of the second part is larger than the thickness of the first part.
  • the electronic device includes the above-mentioned electronic element mounting substrate and the electronic element mounted on the electronic element mounting substrate.
  • the electronic module includes the above-mentioned electronic device and a housing for covering the electronic device provided in the electronic device.
  • the method for manufacturing an electronic element mounting substrate includes a first step to a fifth step.
  • the first step the first insulating layer and the second insulating layer are prepared.
  • a first metal layer having a different thickness is arranged in the second insulating layer.
  • the first insulating layer is laminated with the first metal layer interposed therebetween to obtain the first laminated body.
  • a through hole penetrating the first laminated body is formed so as to penetrate the thick portion of the first metal layer in the stacking direction.
  • a through conductor is formed in the through hole.
  • the method for manufacturing an electronic device mounting substrate includes steps A to E.
  • step A the metal layer A, the metal layer B, and the first insulating layer and the second insulating layer are prepared.
  • step B the metal layer A and the metal layer B are arranged between the first insulating layer and the second insulating layer so that at least a part of them overlap each other.
  • step C the first insulating layer, the metal layer A, the metal layer B, and the second insulating layer are laminated in this order to obtain a second laminated body.
  • step D a through hole penetrating the second laminated body is formed so as to penetrate the portion where the metal layer A and the metal layer B overlap each other in the stacking direction.
  • step E a through conductor is formed in the through hole.
  • FIG. 1A is a top view of the electronic device mounting substrate and the electronic device according to the first embodiment of the present disclosure
  • FIG. 1B is a cross section corresponding to line X1-X1 of FIG. 1A.
  • FIG. 2A is a top view of the electronic module according to another aspect of the first embodiment of the present disclosure
  • FIG. 2B is a cross-sectional view corresponding to line X2-X2 of FIG. 2A. is there.
  • FIG. 3 is an enlarged view of the main part A in FIG. 1 (b).
  • FIG. 4 is an enlarged view of the configuration shown in FIG. 2 at a position corresponding to the main part A of FIG. FIG.
  • FIG. 5 is an enlarged view of another aspect at a position corresponding to the main part A of FIG.
  • FIG. 6 is a schematic view showing a method of manufacturing an electronic device mounting substrate according to the first embodiment of the present disclosure.
  • FIG. 7 is a schematic view showing a method of manufacturing an electronic device mounting substrate according to the first embodiment of the present disclosure.
  • FIG. 8 is a schematic view showing another aspect of the method for manufacturing the electronic device mounting substrate according to the first embodiment of the present disclosure.
  • FIG. 9 is a schematic view showing another aspect of the method for manufacturing the electronic device mounting substrate according to the first embodiment of the present disclosure.
  • FIG. 10A is a schematic view of the periphery of the through conductor in the electronic device mounting substrate according to the second embodiment of the present disclosure as viewed in the first direction, and FIG.
  • FIG. 10B is FIG. 10A.
  • It is sectional drawing corresponding to X10-X10 line of. 11 (a) is a schematic view of the periphery of the through conductor in the electronic device mounting substrate according to the third embodiment of the present disclosure in the first direction
  • FIG. 11 (b) is FIG. 11 (a).
  • FIG. 12 is a cross-sectional view of a substrate for mounting an electronic device according to an aspect of the fourth embodiment of the present disclosure at a position corresponding to a main part A of FIG.
  • FIG. 13 is a cross-sectional view of the electronic device mounting substrate according to the fifth embodiment of the present disclosure at the position corresponding to the main part A of FIG. FIG.
  • FIG. 14 is a cross-sectional view of a substrate for mounting an electronic device according to a sixth embodiment of the present disclosure at a position corresponding to a main part A of FIG. 15 (a) is a schematic view of the periphery of the through conductor in the electronic device mounting substrate according to the first embodiment of the present disclosure in the first direction, and FIG. 15 (b) is FIG. 15 (a). It is sectional drawing corresponding to line X15-X15 of.
  • an electronic device is configured in which an electronic element is mounted on an electronic element mounting substrate.
  • the electronic module is configured to include a housing for covering the electronic device provided on the electronic element mounting substrate.
  • the electronic element mounting substrate, the electronic device, and the electronic module may be in any direction upward or downward, but for convenience, the Cartesian coordinate system xyz is defined and the positive side in the z direction is upward. Further, the direction from the upper side to the lower side is defined as the first direction.
  • FIG. 1 shows a top view and a cross-sectional view of the electronic device 21
  • FIG. 2 shows a top view and a cross-sectional view of the electronic module 31.
  • FIGS. 3 to 5 show an example of an enlarged view of the main part A in FIG. 1 and the position corresponding to the main part A in FIG.
  • FIGS. 6 to 9 show schematic views of the manufacturing method of the electronic element mounting substrate 1.
  • the electronic element mounting substrate 1 has a mounting area 4 on which the electronic element 10 is mounted.
  • the electronic element mounting substrate 1 has at least a first insulating layer 2a and a second insulating layer 2b located side by side in the first direction. Further, a first metal layer 6 which is an internal wiring is provided between the first insulating layer 2a and the second insulating layer 2b. Further, it has a through conductor 5 extending in the first direction from the first insulating layer 2a to the second insulating layer 2b. In FIG. 1, the penetrating conductor 5 penetrates the five insulating layers.
  • the first metal layer 6 has a first portion 6a and a second portion 6b in contact with the through conductor 5, and the second portion 6b is thicker than the first portion 6a.
  • the thickness means the dimension in the first direction.
  • the thickness means the dimension in the stacking direction.
  • the mounting region 4 is a region in which at least one or more electronic elements 10 are mounted, and can be appropriately defined, for example, inside or more of the outermost periphery of the electrode pad 3 described later.
  • the electronic element 10 mounted in the mounting region 4 is not limited to the electronic element, and may be, for example, an electronic component. Further, the number of electronic elements 10 mounted is not limited.
  • the electronic element mounting substrate 1 has a plurality of insulating layers so as to have the first insulating layer 2a and the second insulating layer 2b. In the following, when a plurality of insulating layers are targeted, they are described as the insulating layer 2.
  • Examples of the electrically insulating ceramics used as the material of the insulating layer 2 include an aluminum oxide-based sintered body, a mulite-based sintered body, a silicon carbide-based sintered body, an aluminum nitride-based sintered body, and a silicon nitride-based sintered body. Alternatively, a glass-ceramic sintered body or the like can be mentioned.
  • the material of the insulating layer 2 may be a resin, and examples thereof include a thermoplastic resin, an epoxy resin, a polyimide resin, an acrylic resin, a phenol resin, and a fluorine-based resin.
  • the plurality of insulating layers 2 may be at least two or more layers, and may be formed of five layers as shown in FIG. 1, or may be formed of four or less layers or six or more layers.
  • the thickness is the same, the number of laminated insulating layers 2 is small, so that the electronic element mounting substrate 1 can be made thinner. Further, when the thickness is the same and the number of layers of the insulating layer 2 is large, the rigidity of the electronic element mounting substrate 1 can be increased.
  • the size of one side of the outermost periphery of the electronic element mounting substrate 1 may be, for example, 0.3 mm to 10 cm.
  • the electronic element mounting substrate 1 may be square or rectangular.
  • the electronic element mounting substrate 1 may have a thickness of, for example, 0.2 mm or more.
  • External circuit connection electrodes may be provided on the upper surface, side surface, or lower surface of the electronic element mounting substrate 1.
  • the external circuit connection electrode electrically connects the electronic element mounting substrate 1 and the external circuit board.
  • the through conductor 5, the electrode pad 3, and the electrode for connecting an external circuit formed between the insulating layers 2 are formed.
  • a through conductor other than the through conductor 5 that connects the conductors and the wiring conductors vertically may be provided. Wiring other than these electrodes, wiring conductors, and through conductors 5 may be located only on the surface, only inside, on the surface, and inside of the electronic element mounting substrate 1.
  • the materials of the first metal layer 6, the through conductor 5, the electrode pad 3, the electrode for connecting an external circuit, and other metal layers are tungsten (W) and molybdenum (Mo). , Manganese (Mn), Palladium (Pd), Silver (Ag) or Copper (Cu) or alloys containing at least one metal material selected from these.
  • the materials of the first metal layer 6, the through conductor 5, the electrode pad 3, the electrode for connecting the external circuit, and other metal layers are copper (Cu), gold (Au), and the like. Examples thereof include aluminum (Al), nickel (Ni), molybdenum (Mo), palladium (Pd) or titanium (Ti), and alloys containing at least one metallic material selected from these.
  • the first metal layer 6, the through conductor 5, the electrode pad 3, the electrode for connecting an external circuit, and the other metal layer may further have a plating layer on the upper surface thereof or the exposed portion from the insulating layer 2. According to this configuration, the exposed portion from each upper surface or the insulating layer 2 is protected, so that oxidation can be reduced. Further, according to this configuration, the electrode pad 3 and the electronic element 10 can be satisfactorily electrically connected via an electronic element connecting member 13 such as wire bonding.
  • the plating layer may be, for example, coated with a Ni plating layer having a thickness of 0.5 ⁇ m to 10 ⁇ m, or the Ni plating layer and a gold (Au) plating layer having a thickness of 0.5 ⁇ m to 3 ⁇ m may be sequentially coated. Good.
  • the first metal layer 6 has a first portion 6a and a second portion 6b in contact with the through conductor 5.
  • the thickness of the second part 6b is larger than the thickness of the first part 6a.
  • the first part 6a is located away from the through conductor 5.
  • the first part 6a and the second part 6b are discriminated by the thickness, and the materials may be the same or different.
  • the thickness is the length in the vertical direction according to the cross section along the first direction as shown in FIG.
  • the second portion 6b of the first metal layer 6 is located to enhance the connection reliability between the penetrating conductor 5 penetrating the plurality of insulating layers 2 and the metal layer located between the plurality of insulating layers 2. It is a thing.
  • the contact area between the second part 6b and the penetrating conductor 5 is large, so that the electric resistance becomes high. It does not hinder high functionality.
  • the through hole is formed so as to include the second part 6b and then penetrates. If the conductor 5 is formed, even if it is deformed by pushing the pin, the contact area between the second part 6b and the through conductor 5 is large, which hinders the high functionality of the electronic device due to the high electrical resistance. Less is.
  • the first metal layer 6 having the first part 6a and the second part 6b may be located between the plurality of insulating layers 2, or between the first insulating layer 2a and the second insulating layer 2b. There may be only one layer. At this time, the first metal layer 6 located outside between the first insulating layer 2a and the second insulating layer 2b may be used as another metal layer 6c. Further, between the insulating layers 2, the second part 6b may be located at a plurality of locations or may be located at only one location. Further, when the second part 6b is located at a plurality of places, the thickness of the second part 6b in the cross-sectional view may be different.
  • FIGS. 3 to 6 show an example of an enlarged view of the main part A (or the part corresponding to the main part A) of the present embodiment.
  • the thickness of the second part 6b is one layer thicker than that of the first part 6a.
  • the second part 6b is thicker than the first part 6a in one application or printing.
  • the second part 6b is thicker than the first part 6a in total thickness of at least two layers. In either case, the effect of the present embodiment can be achieved.
  • the second part 6b is thicker than the first part 6a in one coating or printing, a step in the step of applying or printing the paste to be the first metal layer 6. There is little error. Therefore, the clearance between the second part 6b and the first part 6a can be secured with high accuracy, and even when the electronic element mounting substrate 1 is wired at a high density, an inadvertent short circuit between the wirings of different signals occurs. Few.
  • the second part 6b is thicker than the first part 6a in total thickness of the two layers.
  • the paste that becomes the first metal layer 6 is applied or printed twice.
  • a metal component or the like is appropriately added to the paste to be the second layer 6b2.
  • the characteristics can be improved and the viscosity can be changed.
  • the electrical characteristics can be improved by adding a low resistance material such as copper. Further, by using a material having a low viscosity, it is possible to suppress the deformation of the second part 6b when the pin is pushed in.
  • the first metal layer 6 may include a first clearance portion 7 between the second portion 6b and the first portion 6a. That is, the second part 6b may be located away from the first part 6a by the first clearance part 7.
  • the first portion 6a can be a wiring layer through which a signal different from that of the through conductor 5 flows, which contributes to high-density wiring.
  • a third insulating layer 2c located side by side with the second insulating layer 2b in the first direction, and a second metal layer located between the second insulating layer 2b and the third insulating layer 2c.
  • the second clearance portion 8 may be provided between the through conductor 5 and the second metal layer 9. That is, the through conductor 5 may be located away from the second metal layer 9 by the second clearance portion 8.
  • the second metal layer 9 can be a wiring layer through which a signal different from that of the through conductor 5 and the first portion 6a flows, which contributes to high-density wiring.
  • the second metal layer 9 does not necessarily have to be a wiring for flowing a signal different from that of the first part 6a, and may be used as a wiring for connecting with another through conductor and flowing the same signal.
  • the second part 6b may be located in the second clearance part 8 in the plane perspective in the first direction.
  • an example in which the outer edge of the second portion 6b and the inner edge of the second clearance portion 8 overlap is shown. In this way, it includes overlapping with the inside of the second clearance portion 8.
  • the thickness of the second part 6b which is larger than that of the first part 6a, is relaxed by laminating, so that the surface around the through conductor 5 in the electronic element mounting substrate 1 is relaxed. The bulge of the can be reduced.
  • the second clearance portion 8 may be located within the second portion 6b in the plane perspective in the first direction.
  • FIG. 1 shows an example of the electronic device 21.
  • the electronic device 21 includes an electronic element mounting substrate 1 and an electronic element 10 mounted on the upper surface of the electronic element mounting substrate 1.
  • Examples of the electronic element 10 include an imaging element such as a CCD (Charge Coupled Device) type or a CMOS (Complementary Metal Oxide Semiconductor) type, a light emitting element such as an LED (Light Emitting Diode), pressure, pressure, acceleration, a gyro, and the like.
  • the electronic element 10 may be arranged on the upper surface of the electronic element mounting substrate 1 via an adhesive.
  • the adhesive include silver epoxy and thermosetting resin.
  • the electronic element 10 and the electronic element mounting substrate 1 may be electrically connected by, for example, an electronic element connecting member 13.
  • the electronic device 21 may have a lid 12 joined to the upper surface of the electronic element mounting substrate 1 while covering the electronic element 10.
  • the lid 12 for example, when the electronic element 10 is an image pickup element such as CMOS or CCD, or a light emitting element such as an LED, a highly transparent member such as a glass material can be used. Further, for the lid body 12, for example, when the electronic element 10 is an integrated circuit or the like, a metal material, a ceramic material, or an organic material can be used.
  • the lid body 12 may be joined to the electronic element mounting substrate 1 via the lid body connecting member 14.
  • the material constituting the lid connecting member 14 include a thermosetting resin, a low melting point glass, a brazing material made of a metal component, and the like.
  • the electronic device 21 has the electronic element mounting substrate 1 of the present disclosure, it is excellent in reliability, so that the characteristics of the electronic element 10 can be exhibited for a long period of time. Further, in the electronic element mounting substrate 1, the wiring density can be improved by arranging the first clearance portion 7, the second clearance portion 8, and the second metal layer 9, so that the electronic device 21 is highly functional. And miniaturization is possible.
  • FIG. 2 shows an example of the electronic module 31.
  • the electronic module 31 includes a housing 32 that covers the electronic element 10 provided in the electronic device 21. By having the housing 32, it is possible to further improve the airtightness or reduce the direct application of stress from the outside to the electronic device 21.
  • the housing 32 is made of, for example, a resin or a metal material.
  • FIG. 2 shows an example in which the electronic element 10 is covered by the lid connecting member 14 and the lid 12, and further covered by the housing 32. In the example shown in FIG. 2, the housing 32 also covers the side surface of the electronic element mounting substrate 1, but the housing 32 may cover the electronic element 10 on the upper surface of the electronic element mounting substrate 1.
  • the housing 32 may have a lens in a part thereof. Here, not only one lens but also a plurality of lenses may be incorporated, and examples of the material include resin, glass, and crystal. Further, the housing 32 is provided with a drive device or the like for driving up, down, left and right, and is electrically connected to a pad or the like located on the surface of the electronic element mounting substrate 1 via a bonding material such as solder. May be good.
  • the electronic module 31 having such a configuration is called an imaging module.
  • the housing 32 may have an opening into which an external circuit board is inserted.
  • the gap between the openings is closed with a sealing material such as resin after being electrically connected to the electronic element mounting substrate 1. Therefore, the inside of the housing 32 may be made airtight.
  • the method for manufacturing the electronic element mounting substrate 1 includes a first step of preparing a first insulating layer and a second insulating layer, and a second step of arranging a first metal layer having a different thickness in the second insulating layer. , The first step of laminating the first insulating layer with the first metal layer sandwiched between them to obtain the first laminated body 47, and the first laminated body in the laminating direction so as to penetrate the thick portion of the first metal layer. A fourth step of forming a through hole penetrating 47 and a fifth step of forming a through conductor in the through hole are provided. In addition, as shown in FIGS.
  • the steps A to E which are the methods for manufacturing the substrate for mounting the electronic element, are described above. It is basically the same as the first to fifth steps.
  • the first step to the fifth step and the steps A to E are described in detail below as before firing, but the first metal layer, the first insulating layer, and the second insulating layer are prepared and sintered, respectively. It may be produced by arranging it later and joining it.
  • the paste to be the first metal layer is used.
  • the first paste 46 of which the first part is referred to as the first part 46a and the second part is referred to as the second part 46b.
  • the green sheet serving as the insulating layer is collectively referred to as a green sheet 42
  • a green sheet serving as a first insulating layer is referred to as a first green sheet 42a
  • a green sheet serving as a second insulating layer is referred to as a second green sheet 42b.
  • the metal layer A and the metal layer B may be a metal paste, a pad-shaped metal layer, or a metal layer after sintering.
  • First step First, a green sheet 42 including a first green sheet 42a and a second green sheet 42b is prepared.
  • the insulating layer is an aluminum oxide (Al 2 O 3 ) material sintered body
  • the powder of Al 2 O 3 is baked with silica (SiO 2 ), magnesia (MgO), calcia (CaO) or the like.
  • silica SiO 2
  • MgO magnesia
  • CaO calcia
  • a sheet-shaped molded product is obtained by a molding method such as a doctor blade method or a calender roll method.
  • the green sheet 42 is obtained by processing the outer shape of the above-mentioned sheet-shaped molded product with a mold or the like (FIG. 6 (a)). At this time, a notch may be formed as an outer shape, a through hole may be formed, or a slit for taking a large number of pieces may be formed.
  • a sheet-shaped insulating layer when the insulating layer is made of resin, a sheet-shaped insulating layer can be obtained by molding by a transfer molding method, an injection molding method, pressing with a mold, or the like.
  • a sheet-shaped insulating layer when the insulating layer is a glass epoxy resin, a sheet-shaped insulating layer can be obtained by impregnating a base material made of glass fiber with the resin and thermosetting at a predetermined temperature.
  • Second step Next, by applying the first paste 46 to the second green sheet 42b of the green sheet 42 by a screen printing method or the like, the first portion 46a and the thickness of the first portion 46a are thicker. A large second portion 46b is placed in place (FIG. 6B). Here, in order to obtain the second portion 46b, it is applied to a predetermined thickness (thickness of the first portion 46a) by the first screen, and then applied to a predetermined position in the first application region by using the second screen. Can be obtained by doing.
  • the first paste 46 is produced by adding an appropriate solvent and a binder to the metal powder made of the above-mentioned metal material and mixing them to adjust the viscosity to an appropriate level.
  • the first paste 46 may contain glass or ceramics in order to increase the bonding strength with the other green sheets 42 to be laminated.
  • a metal paste serving as a second metal layer, an electrode pad, and an electrode for connecting an external circuit may be applied.
  • the through hole may be filled with a metal paste.
  • a first metal layer having a difference in thickness can be formed by a sputtering method, a vapor deposition method, or the like. Further, after providing a metal film on the surface, it may be formed by a plating method.
  • the first green sheet 42a is placed on the second green sheet 42b coated with the first paste 46 containing the first portion 46a and the second portion 46b having a thickness larger than that of the first portion 46a.
  • the first laminated body 47 is obtained (FIG. 7 (a)).
  • the two-layer laminated body is described here as a target, according to the example shown in FIG. 6, the first laminated body 47 may be used rather than the laminated body of five green sheets 42.
  • a notch or a recess may be formed by a mold or the like.
  • the first laminated body 47 includes the second portion 46b so as to penetrate the thick portion of the first metal layer in the laminating direction (first direction). Form a through hole to penetrate.
  • Examples of the method for forming the through hole include punching, a laser, and the like, in addition to the mold.
  • the through conductor 45 is formed by filling the through holes formed in the fourth step with the above-mentioned metal paste or the like.
  • FIG. 7B shows a through conductor 45 formed on the first laminated body 47.
  • a dividing groove is provided at a predetermined position of the first laminated body 47 provided with the through conductor 45 by using a mold, punching, slicing device, laser, or the like.
  • the dividing groove can also be formed by a slicing device after firing.
  • the first laminated body 47 provided with the through conductor 45 is fired at a temperature of about 1500 ° C. to 1800 ° C. to obtain a sintered body.
  • the above-mentioned first paste 46 is fired at the same time as the green sheet 42 to become the first metal layer. The same applies to the through conductor, the second metal layer, the electrode pad, and the electrode for connecting an external circuit.
  • a substrate for mounting an electronic device can be obtained.
  • it may be divided by breaking along the previously formed dividing groove.
  • the sintered body may be divided by using a slicing device without providing the dividing groove.
  • plating is applied to the surface of the electrode pad, the external connection pad, and each metal layer exposed at the time of the sintered body by using an electrolytic or electroless plating method, respectively. You may.
  • an electronic device can be obtained by mounting the electronic element on the obtained substrate for mounting the electronic element.
  • the electronic element is electrically bonded to the electronic element mounting substrate by an electronic element connecting member.
  • the electronic element may be fixed to the electronic element mounting substrate by using an adhesive or the like.
  • an electronic module can be obtained by providing a housing for covering the electronic element.
  • the second portion 46b can be formed by differentiating the metal paste of the first layer and the metal paste of the second layer as shown in the example shown in FIG.
  • a metal paste is applied to each predetermined position of the first green sheet 42a serving as the first insulating layer and the second green sheet 42b serving as the second insulating layer.
  • it can also be obtained by laminating these.
  • the print area of the second layer is on the metal paste of the first layer, whereas the print area is on the green sheet 42.
  • the first metal layer 6 may be, for example, a signal line.
  • a signal line unlike the power and ground potential patterns, one through conductor 5 conducts with the other wiring. Therefore, the through conductor 5 and the signal line are required to have higher reliability of electrical connection.
  • the signal line (first metal layer 6) since the signal line (first metal layer 6) has the second part 6b as in the present embodiment, it is possible to improve the reliability of the electrical connection. ..
  • FIG. 10 An example of the signal line is shown in FIG. In FIG. 10, in the planar perspective in the first direction, the first part 6a is larger in the x direction and the y direction than the second part 6b located in contact with the through conductor 5, and extends to the negative side in the x direction. An example is shown.
  • FIG. 11 Another example of the signal line is shown in FIG. In FIG. 11, the first part 6a is smaller in the y direction than the second part 6b located in contact with the through conductor 5, and is on the negative side in the x direction from the second part 6b with reference to the second part 6b.
  • An example of extension is shown.
  • the second layer 6b2 may be positioned so as to be in contact with the lower insulating layer 2.
  • the second part 6b has an inclination, and the insulating layer corresponding to this edge is compared with the case where the edge stands on the upper part of the second part 6b in FIG. 11B.
  • the stress related to 2 is reduced, and the reliability of mechanical properties is excellent.
  • the first insulating layer 2a may have a region sandwiched between the first metal layer 6 and the through conductor 5 in a direction orthogonal to the first direction.
  • the expansion of the through conductor 5 and the first metal layer 6 can be suppressed. it can.
  • the thickness of the second part 6b may increase toward the through conductor 5.
  • the connection reliability between the through conductor 5 and the first metal layer 6 including the second portion 6b is excellent.
  • the through-conductor 5 has an upwardly inclined portion
  • the insulating layer 2 in contact with each of the through-conductor 5 and the second portion 6b has an angle. In comparison, since the stress on the corners of the insulating layer 2 is small, the reliability of the mechanical properties is excellent.
  • a metal paste to be the first part 6a and the second part 6b is applied to prepare a laminated body of green sheets, and then a portion to be a through conductor 5.
  • the second layer 6b1 is made to follow the pin by slowing down the speed at which the pin is returned after the pin of the mold is pushed, so that the shape is as shown in FIG. Is possible.
  • the second portion 6b is located side by side with the first region R1 in contact with the through conductor 5 in the direction orthogonal to the first region R1 and penetrates more than the first region R1. It has a second region R2 located away from the conductor 5.
  • the thickness of the second region R2 may be smaller than the thickness of the first region R1. That is, the thickness of the portion of the second portion 6b away from the through conductor 5 in the direction orthogonal to the first direction may be small.
  • the cross-sectional view shape may be a lens shape.
  • the lens shape means that the thickness of the curved surface becomes smaller in the cross-sectional view shape toward the portion where the second portion 6b is separated from the through conductor 5 in the direction orthogonal to the first direction.
  • the second part 6b has a lens shape, the possibility that a gap is generated can be further reduced.
  • the present disclosure is not limited to the examples of the above-described embodiments, and various modifications such as numerical values are possible.
  • the shape of the electrode pad 3 is rectangular in the top view, but it may be circular or other polygonal shape.
  • the arrangement, number, shape, mounting method of electronic elements, etc. of the electrode pads 3 in this embodiment are not specified.
  • the various combinations of the feature portions in the present embodiment are not limited to the examples of the above-described embodiments. In addition, combinations of each embodiment are also possible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

電子素子実装用基板1は、第1絶縁層および第2絶縁層と、第1金属層と、貫通導体とを備えている。第1絶縁層および第2絶縁層は、第1方向に並んで位置している。第1金属層は、第1絶縁層および第2絶縁層の間に位置している。貫通導体は、第1絶縁層から第2絶縁層にわたって第1方向に延びている。第1金属層は、貫通導体から離れて位置する第1部と、貫通導体に接する第2部と、を有している。そして、第2部の厚みは、第1部の厚みよりも大きい。

Description

電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法
 本開示は、電子素子等が実装される電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法に関するものである。
 絶縁層と配線層を含み、貫通導体を有する電子素子実装用基板が知られている。
 近年、電子素子は高機能化が要求され、端子数が増加傾向にある。そのため、電子素子が実装される電子素子実装用基板においては、上下、同じ層内などにおいて配線層の接続部分が多くなっており、接続信頼性が高いことが要求されている。上下の接続、すなわち貫通導体に関しては、貫通した導体を有する各絶縁層を積層する方法があるが、工程誤差等で上下層間の各絶縁層の導体の位置がズレて電気的に接続しない、または/および、意図しない電気的な接続が発生することが懸念される。また、各絶縁層における導体の大きさを小さくすることができない、または/および、貫通導体間の距離を小さくできず、電子素子実装用基板の高密度配線の障壁になる。
 特許文献1には、電子素子実装用基板を製造する方法として、上下層の貫通導体の電気的な接続をより良好なものとするために、絶縁層と配線層とを含む積層体を形成し、レーザーで貫通孔を形成した後に、この貫通孔内に貫通導体を作製する方法が記載されている(特開2017-183337号公報参照)。
 各絶縁層が積層された積層体において貫通孔を形成する方法として、金型を用いたピンでの打ち抜きにより貫通孔を形成し、この貫通孔内に貫通導体を作製する方法がある。このピンでの打ち抜きにあたり、貫通導体との電気的接続を補助する配線層(内部配線)は、ピンの押し込みにより変形する場合が有る。このときの変形によっては、貫通導体と内部配線との接触面積が小さくなることで電気抵抗が高くなり、電子装置の高機能化の妨げになることが懸念されていた。そのため、今般の電子素子実装用基板には、貫通導体と内部配線との接続信頼性が高いことが求められている。
 本開示の1つの態様に係る電子素子実装用基板は、第1絶縁層および第2絶縁層と、第1金属層と、貫通導体とを備えている。第1絶縁層および第2絶縁層は、第1方向に並んで位置している。第1金属層は、第1絶縁層および第2絶縁層の間に位置している。貫通導体は、第1絶縁層から第2絶縁層にわたって第1方向に延びている。第1金属層は、貫通導体から離れて位置する第1部と、貫通導体に接する第2部と、を有している。そして、第2部の厚みは、第1部の厚みよりも大きい。
 本開示の1つの態様に係る電子装置は、上述した電子素子実装用基板と、電子素子実装用基板に実装された電子素子と、を備える。
 本開示の1つの態様に係る電子モジュールは、上述した電子装置と、前記電子装置に備わる前記電子装置を覆う筐体と、を備える。
 本開示の1つの態様に係る電子素子実装基板の製造方法は、第1工程から第5工程を備える。第1工程では、第1絶縁層および第2絶縁層を準備する。第2工程では、第2絶縁層に、厚みに違いを有する第1金属層を配置する。第3工程では、第1金属層を挟んで第1絶縁層を積層し、第1積層体を得る。第4工程では、積層方向において、第1金属層における厚みの大きい部分を貫通するように第1積層体を貫通する貫通孔を形成する。第5工程では、貫通孔内に貫通導体を形成する。
 本開示の1つの態様に係る電子素子実装基板の製造方法は、工程Aから工程Eを備えている。工程Aでは、金属層Aと、金属層Bと、第1絶縁層および第2絶縁層とを準備する。工程Bでは、第1絶縁層および前記第2絶縁層との間において、少なくとも一部が互いにかさなるように金属層Aおよび金属層Bを配置する。工程Cでは、第1絶縁層、前記金属層Aおよび金属層B、第2絶縁層を順に積層して、第2積層体を得る。工程Dでは、積層方向において、金属層Aおよび金属層Bが互いに重なっている部分を貫通するように第2積層体を貫通する貫通孔を形成する。そして、工程Eでは、貫通孔内に貫通導体を形成する。
図1(a)は本開示の第1の実施形態に係る電子素子実装用基板および電子装置の上面図であり、図1(b)は図1(a)のX1-X1線に対応する断面図である。 図2(a)は本開示の第1の実施形態のその他の態様に係る電子モジュールの上面図であり、図2(b)は図2(a)のX2-X2線に対応する断面図である。 図3は、図1(b)における要部Aの拡大図である。 図4は、図1の要部Aに相当する位置における、図2に示す構成の拡大図である。 図5は、図1の要部Aに相当する位置における、その他の態様に係る拡大図である。 図6は、本開示の第1の実施形態に係る電子素子実装用基板の製造方法を示す概略図である。 図7は、本開示の第1の実施形態に係る電子素子実装用基板の製造方法を示す概略図である。 図8は、本開示の第1の実施形態に係る電子素子実装用基板の製造方法のその他の態様を示す概略図である。 図9は本開示の第1の実施形態に係る電子素子実装用基板の製造方法のその他の態様を示す概略図である。 図10(a)は本開示の第2の実施形態に係る電子素子実装用基板における貫通導体周辺を第1方向に向かって見た概略図であり、図10(b)は図10(a)のX10-X10線に対応する断面図である。 図11(a)は本開示の第3の実施形態に係る電子素子実装用基板における貫通導体周辺を第1方向に向かって見た概略図であり、図11(b)は図11(a)のX11-X11線に対応する断面図である。 図12は、図1の要部Aに相当する位置における、本開示の第4の実施形態の態様に係る電子素子実装用基板の断面図である。 図13は、図1の要部Aに相当する位置における、本開示の第5の実施形態の態様に係る電子素子実装用基板の断面図である。 図14は、図1の要部Aに相当する位置における、本開示の第6の実施形態の態様に係る電子素子実装用基板の断面図である。 図15(a)は本開示の第1の実施形態に係る電子素子実装用基板における貫通導体周辺を第1方向に向かって見た概略図であり、図15(b)は図15(a)のX15-X15線に対応する断面図である。
  <電子素子実装用基板および電子装置の構成>
 以下、本開示のいくつかの例示的な実施形態について図面を参照して説明する。なお、以下の説明では、電子素子実装用基板に電子素子が実装された構成を電子装置とする。また、電子素子実装用基板に備わる電子装置を覆う筐体を備える構成を電子モジュールとする。電子素子実装用基板、電子装置および電子モジュールは、いずれの方向が上方若しくは下方とされてもよいが、便宜的に、直交座標系xyzを定義するとともに、z方向の正側を上方とする。また、上方から下方に向かう方向を第1方向とする。
  (第1の実施形態)
 図1~図9を参照して本開示の第1の実施形態に係る電子素子実装用基板、並びにそれを備えた電子装置について説明する。なお、図1は電子装置21の上面図および断面図を示しており、図2は電子モジュール31の上面図および断面図を示している。また、図3~図5には、図1における要部A、および図1における要部Aに相当する位置の拡大図の例を示している。また、図6~図9には、電子素子実装用基板1の製造方法における概略図を示している。
 電子素子実装用基板1は、上方に電子素子10が実装される実装領域4を有する。電子素子実装用基板1は、少なくとも第1方向に並んで位置する第1絶縁層2a、第2絶縁層2bを有する。また、第1絶縁層2aおよび第2絶縁層2bの間に、内部配線である第1金属層6を有する。さらに、第1絶縁層2aから第2絶縁層2bにわたって第1方向に延びる貫通導体5を有する。なお、図1において貫通導体5は、5層の絶縁層を貫通している。
 そして、第1金属層6は、第1部6aと、貫通導体5に接する第2部6bと、を有しており、第2部6bは、第1部6aよりも厚みが大きい。
 ここで、厚みとは、第1方向における寸法をいう。言い換えれば、厚みとは、積層方向における寸法をいう。また、実装領域4とは、少なくとも1つ以上の電子素子10が実装される領域であり、例えば後述する電極パッド3の最外周の内側またはそれ以上等、適宜定めることが可能である。また、実装領域4に実装される電子素子10は、電子素子に限らず、例えば電子部品であってもよい。さらに、電子素子10の実装される個数は限定されない。
 電子素子実装用基板1は、第1絶縁層2aおよび第2絶縁層2bを有しているように複数の絶縁層を有する。以下において、複数の絶縁層を対象とする場合、絶縁層2として記載する。
 絶縁層2の材料として使用される電気絶縁性セラミックスとしては例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体またはガラスセラミック焼結体等が挙げられる。また、絶縁層2の材料としては、樹脂でもよく、例えば、熱可塑性の樹脂、エポキシ樹脂、ポリイミド樹脂、アクリル樹脂、フェノール樹脂またはフッ素系樹脂等が挙げられる。
 複数の絶縁層2は、少なくとも2層以上であればよく、図1に示すように5層から形成されていてもよいし、4層以下または6層以上から形成されていてもよい。厚みが同じである場合には、絶縁層2の積層数が少ないことにより、電子素子実装用基板1の薄型化を図ることができる。また、厚みが同じである場合、絶縁層2の積層数が多い場合には、電子素子実装用基板1の剛性を高めることができる。
 電子素子実装用基板1は、例えば、最外周の1辺の大きさが0.3mm~10cmであってもよい。上面視において電子素子実装用基板1が四角形状あるとき、正方形であってもよいし長方形であってもよい。また、電子素子実装用基板1は、例えば、厚みが0.2mm以上であってもよい。
 電子素子実装用基板1の上面、側面または下面には、外部回路接続用電極が設けられていてもよい。外部回路接続用電極は、電子素子実装用基板1と外部回路基板とを電気的に接続するものである。
 さらに、電子素子実装用基板1には、絶縁層2間に形成される第1金属層6、貫通導体5、電極パッド3、外部回路接続用電極以外に、他の金属層である電極や配線導体、配線導体同士を上下に接続する貫通導体5以外の貫通導体が設けられていてもよい。これらの電極、配線導体、貫通導体5以外の配線は、電子素子実装用基板1の表面のみ、内部のみ、表面および内部に位置するものであってもよい。
 絶縁層2が電気絶縁性セラミックスからなる場合、第1金属層6、貫通導体5、電極パッド3、外部回路接続用電極および他の金属層の材質としては、タングステン(W)、モリブデン(Mo)、マンガン(Mn)、パラジウム(Pd)、銀(Ag)若しくは銅(Cu)またはこれらから選ばれる少なくとも1種以上の金属材料を含有する合金等が挙げられる。また、絶縁層2が樹脂からなる場合、第1金属層6、貫通導体5、電極パッド3、外部回路接続用電極および他の金属層の材質としては、銅(Cu)、金(Au)、アルミニウム(Al)、ニッケル(Ni)、モリブデン(Mo)、パラジウム(Pd)若しくはチタン(Ti)またはこれらから選ばれる少なくとも1種以上の金属材料を含有する合金等が挙げられる。
 第1金属層6、貫通導体5、電極パッド3、外部回路接続用電極および他の金属層は、それぞれの上面または絶縁層2からの露出部分において、さらにめっき層を有していてもよい。この構成によれば、それぞれの上面または絶縁層2からの露出部分が保護されるため、酸化を低減することができる。また、この構成によれば、電極パッド3と電子素子10と、をワイヤボンディング等の電子素子接続部材13を介して良好に電気的接続することができる。めっき層は、例えば、厚みが0.5μm~10μmのNiめっき層を被着させるか、またはこのNiめっき層および厚みが0.5μm~3μmの金(Au)めっき層を順次被着させてもよい。
 図3に示すように、第1金属層6は、第1部6aと、貫通導体5に接する第2部6bとを有している。第2部6bの厚みは、第1部6aの厚みよりも大きい。第1部6aは、貫通導体5から離れて位置している。ここで、第1部6aと第2部6bとは、厚みによって判別されるものであり、材質は同じであっても、異なっていてもよい。なお、厚みとは、図3に示すような第1方向に沿った断面によれば、上下方向の長さのことである。ここで、第1金属層6の第2部6bは、複数の絶縁層2を貫く貫通導体5と、複数の絶縁層2の間に位置する金属層との接続信頼性を高めるために位置するものである。
 貫通導体5に接する第2部6bの厚みが第1部6aの厚みよりも大きいことにより、第2部6bと貫通導体5との接触面積が大きいため、電気抵抗が高くなることよる電子装置の高機能化の妨げになることが少ない。
 また、第2部6bの厚みが第1部6aの厚みよりも大きいときには、貫通導体5を形成するための貫通孔を形成するにあたり、第2部6bを含むように貫通孔を形成した後に貫通導体5を形成すれば、ピンの押し込みにより変形したとしても、第2部6bと貫通導体5との接触面積が大きいため、電気抵抗が高くなることよる電子装置の高機能化の妨げになることが少ない。
 ここで、第1部6aと第2部6bを有する第1金属層6は、複数の絶縁層2間に位置していてもよいし、第1絶縁層2aおよび第2絶縁層2bの間に1層だけであってもよい。このとき、第1絶縁層2aおよび第2絶縁層2bの間以外に位置した第1金属層6を他の金属層6cとしてもよい。また、絶縁層2間において、第2部6bは複数個所に位置していてもよいし、1か所だけであってもよい。また、第2部6bが複数個所に位置しているとき、断面視における第2部6bの厚みはそれぞれ異なっていてもよい。
 図3~図6に本実施形態の要部A(若しくは要部Aに相当する部分)の拡大図の例を示す。
 図3に示す例では、第2部6bが1層の厚みで第1部6aよりも厚くなっている。言い換えると、第2部6bは1回の塗布または印刷で第1部6aよりも厚くなっている。また、図4に示す例では、第2部6bが少なくとも2層の厚みの合計で第1部6aよりも厚くなっている。どちらの場合においても本実施形態の効果を奏することが可能となる。
 図3に示す例のように、第2部6bは1回の塗布または印刷で第1部6aよりも厚くなっていることで、第1金属層6となるペーストを塗布または印刷する工程において工程誤差が生じることが少ない。よって、第2部6bと第1部6aとのクリアランスを精度よく確保することができ、電子素子実装用基板1を高密度に配線した場合においても、異なる信号の配線間における不用意なショートが少ない。
 図4に示す例のように、第2部6bが2層の厚みの合計で第1部6aよりも厚くなっている。言い換えると第1金属層6となるペーストを2回塗布または印刷している。これにより、例えば、第1部6aと厚みの同じ部分を第1層6b1、第1層上に位置するのを第2層6b2としたとき、第2層6b2となるペーストに金属成分等を適宜加えて特性向上を図ったり、粘度を変更したりすることができる。特性向上としては、例えば銅などの低抵抗材料を加えることにより、電気特性の向上を図ることができる。また、粘度の低い材料を用いることで、ピンの押し込み時の第2部6bの変形を抑制することができる。
 また、第1金属層6は、第2部6bと第1部6aとの間に、第1クリアランス部7を備えていてもよい。つまり、第2部6bは、第1クリアランス部7によって第1部6aと離れて位置していてもよい。このような構成を満たすときには、例えば、第1部6aを貫通導体5と異なる信号を流す配線層とすることができるため、高密度な配線に寄与する。
 また、図1に示すように、第2絶縁層2bと第1方向に並んで位置する第3絶縁層2cと、第2絶縁層2bおよび第3絶縁層2cの間に位置する第2金属層9と、を備えるとき、貫通導体5と第2金属層9との間に、第2クリアランス部8を備えていてもよい。つまり、貫通導体5は、第2クリアランス部8によって第2金属層9と離れて位置していてもよい。このような構成を満たすときには、第2金属層9を貫通導体5および第1部6aと異なる信号を流す配線層とすることができるため、高密度な配線に寄与する。そして、電子素子実装用基板1の高密度配線をより向上させることができれば、電子装置21の高機能化および小型化が可能となる。なお、第2金属層9は、必ずしも第1部6aと異なる信号を流す配線である必要はなく、別の貫通導体で繋いで同じ信号を流す配線として用いてもよい。
 図5に示す例に示すように、第2部6bは、第1方向における平面透視において、第2クリアランス部8内に位置していてもよい。図5に示す例においては、第2部6bの外縁と第2クリアランス部8の内縁とが重なっている例を示している。このように、第2クリアランス部8内とは重なることを含む。このような構成を満たしているときには、積層することのよって第2部6bの第1部6aよりも厚みが大きい分が緩和されるため、電子素子実装用基板1における貫通導体5の周囲の表面の膨らみを小さくすることができる。
 また、言い換えれば、第2クリアランス部8を有していることによって、電子素子実装用基板1における貫通導体5の周囲の表面に生じる窪みを小さくすることができる。
 また、第2クリアランス部8は、第1方向における平面透視において、第2部6b内に位置していてもよい。このような構成を満たすときには、貫通導体5に近接する部分において、表面の膨らみや窪みを小さくすることができるとともに、高密度な配線を行うことができる。
   <電子装置の構成>
 図1に電子装置21の例を示す。電子装置21は、電子素子実装用基板1と、電子素子実装用基板1の上面に実装された電子素子10を備えている。
 電子素子10の一例としては、例えばCCD(Charge Coupled Device)型またはCMOS(Complementary Metal Oxide Semiconductor)型等の撮像素子、LED(Light Emitting Diode)等の発光素子、圧力、気圧、加速度、ジャイロ等のセンサー機能を有する素子、または集積回路等である。
 なお、電子素子10は、接着材を介して、電子素子実装用基板1の上面に配置されていてもよい。この接着材としては、例えば、銀エポキシまたは熱硬化性樹脂等が挙げられる。また、電子素子10と電子素子実装用基板1とは例えば電子素子接続部材13で電気的に接続されていてもよい。
 電子装置21は、電子素子10を覆うとともに、電子素子実装用基板1の上面に接合された蓋体12を有していてもよい。
 蓋体12は、例えば電子素子10がCMOS、CCD等の撮像素子、またはLEDなどの発光素子である場合、ガラス材料等の透明度の高い部材を用いることができる。また蓋体12は例えば、電子素子10が集積回路等であるとき、金属製材料、セラミック材料または有機材料を用いることができる。
 蓋体12は、蓋体接続部材14を介して電子素子実装用基板1と接合されていてもよい。蓋体接続部材14を構成する材料として例えば、熱硬化性樹脂または低融点ガラスまたは金属成分からなるろう材等が挙げられる。
 電子装置21は、本開示の電子素子実装用基板1を有しているため、信頼性に優れるため、電子素子10が有する特性を長期にわたって発揮することができる。また、電子素子実装用基板1において、第1クリアランス部7、第2クリアランス部8、第2金属層9を配置することにより、配線密度を向上させることができるため、電子装置21の高機能化および小型化が可能となる。
   <電子モジュールの構成>
 図2に電子モジュール31の例を示す。電子モジュール31は、電子装置21に備わる電子素子10を覆う筐体32を備えている。筐体32を有することでより気密性の向上または外部からの応力が直接電子装置21に加えられることを低減することが可能となる。筐体32は、例えば樹脂または金属材料等からなる。図2においては、電子素子10が蓋体接続部材14および蓋体12によって覆われ、さらに筐体32で覆われている例を示している。なお、図2に示す例において筐体32は、電子素子実装用基板1の側面をも覆っているが、電子素子実装用基板1の上面において電子素子10を覆うものであってもよい。
 筐体32は、一部にレンズを有していてもよい。ここで、レンズは1個のみならず複数個組み込まれていてもよく、材質としては、樹脂、ガラスまたは水晶等が挙げられる。また、筐体32は、上下左右の駆動を行う駆動装置等が付いていて、電子素子実装用基板1の表面に位置するパッド等と半田などの接合材を介して電気的に接続されていてもよい。このような構成の電子モジュール31は、撮像モジュールと呼ばれる。
 なお、筐体32は、外部回路基板が挿入される開口部を有していてもよい。ここで、筐体32が開口部を有し、外部回路基板が挿入されるときには、電子素子実装用基板1と電気的に接続した後、樹脂等の封止材等で開口部の隙間を閉じて、筐体32の内部の気密化を図ってもよい。
  <電子素子実装用基板および電子装置の製造方法>
 次に、本実施形態の電子素子実装用基板1および電子装置21の製造方法の一例について説明する。なお、下記で示す製造方法の一例は、多数個取りの例の一例の製造方法である。
 以下各工程について、図6および図7を用いて詳細に説明する。
 電子素子実装用基板1の製造方法は、第1絶縁層および第2絶縁層を準備する第1工程と、第2絶縁層に、厚みに違いを有する第1金属層を配置する第2工程と、第1金属層を挟んで第1絶縁層を積層し、第1積層体47を得る第3工程と、第1金属層における厚みの大きい部分を貫通するように、積層方向において第1積層体47を貫通する貫通孔を形成する第4工程と、貫通孔内に貫通導体を形成する第5工程と、を備える。なお、後述する図8および図9のように、1層目の金属ペーストと2層目の金属ペーストを異ならせる場合における、電子素子実装用基板の製造方法である工程Aから工程Eは、上述した第1工程から第5工程と基本的には同様である。第1工程から第5工程および工程Aから工程Eは、以下では焼成前として詳細に説明しているが、第1金属層、第1絶縁層、第2絶縁層を準備して、それぞれ焼結後に配置し、接合して作製したものであってもよい。
 なお、以下においては、焼成により、第1金属層、第1絶縁層、第2絶縁層となる例について説明するため、図6および図7に示す例においては、第1金属層となるペーストを総称して第1ペースト46、このうち第1部となる部分を第1部分46a、第2部となる部分を第2部分46bと記載する。また、絶縁層となるグリーンシートを総称して、グリーンシート42、第1絶縁層となるグリーンシートを第1グリーンシート42a、第2絶縁層となるグリーンシートを第2グリーンシート42bと記載する。また、金属層A、金属層Bは、金属ペーストであってもよいし、パッド状になったものあるいは焼結後等の金属層であってもよい。
 第1工程:まず、第1グリーンシート42aおよび第2グリーンシート42bを含むグリーンシート42を用意する。ここで絶縁層が、酸化アルミニウム(Al)質焼結体である場合には、Alの粉末に、シリカ(SiO)、マグネシア(MgO)およびカルシア(CaO)等の焼結助剤粉末を添加し、さらに適当なバインダー、溶剤および可塑剤を添加して混合してスラリー状となす。その後、ドクターブレード法またはカレンダーロール法等の成形方法によってシート状成形体を得る。
 次に、前述のシート状成形体を金型等によって外形状を加工することにより、グリーンシート42を得る(図6(a))。このとき、外形状としてノッチを形成したり、貫通孔を形成したり、多数個取りのためのスリットを形成したりしてもよい。
 なお、他の例として絶縁層が樹脂からなる場合は、トランスファーモールド法、インジェクションモールド法または金型等での押圧等で成形することによってシート状の絶縁層を得ることができる。さらに他の例として絶縁層がガラスエポキシ樹脂であるときには、ガラス繊維からなる基材に樹脂を含浸させ、所定の温度で熱硬化させることによってシート状の絶縁層を得ることができる。
 第2工程:次に、スクリーン印刷法等によって、グリーンシート42のうち、第2グリーンシート42bに、第1ペースト46を塗布することにより、第1部分46aと、第1部分46aよりも厚みの大きい第2部分46bとを所定位置に配置する(図6(b))。ここで、第2部分46bを得るには、第1スクリーンによって所定の厚み(第1部分46aの厚み)に塗布し、次に第2スクリーンを用いて、1回目の塗布領域の所定位置に塗布することによって得ることができる。第1ペースト46は、前述した金属材料からなる金属粉末に適当な溶剤およびバインダーを加えて混合することによって、適度な粘度に調整して作製される。なお、第1ペースト46は、積層する他のグリーンシート42との接合強度を高めるために、ガラスまたはセラミックスを含んでいても構わない。
 また、他のグリーンシート42においては、第2金属層、電極パッド、外部回路接続用電極となる金属ペーストを塗布してもよい。グリーンシート42が貫通孔を有するものであるとき、この貫通孔に金属ペーストを充填してもよい。
 また、他の例として絶縁層が樹脂からなる場合には、スパッタ法、蒸着法等によって厚みに違いを有する第1金属層を形成することができる。また、表面に金属膜を設けた後に、めっき法を用いて形成してもよい。
 第3工程:次に、第1部分46aと、第1部分46aよりも厚みの大きい第2部分46bとを含む第1ペースト46が塗布された第2グリーンシート42b上に第1グリーンシート42aを積層することにより、第1積層体47を得る(図7(a))。なお、ここでは2層の積層体を対象に記載したが、図6に示す例によれば、5枚のグリーンシート42の積層より、第1積層体47とすればよい。なお、第1積層体47を得た後に、切欠き部または凹部等となる部分を金型などで作製してもよい。
 第4工程:次に、金型を用い、積層方向(第1方向)において、第1金属層の厚みの大きい部分を貫通するように、つまり第2部分46bを含んで第1積層体47を貫通する貫通孔を形成する。貫通孔の形成方法としては、金型以外に、パンチング、レーザー等が挙げられる。
 第5工程:次に、第4工程において形成した貫通孔に前述した金属ペースト等を充填することにより貫通導体45を形成する。図7(b)は、第1積層体47に貫通導体45を形成したものを示すものである。
 次に、貫通導体45を備えた第1積層体47の所定の位置に、金型、パンチング、スライシング装置またはレーザー等を用いて分割溝を設ける。なお、分割溝は、焼成後にスライシング装置により形成することもできる。
 次に、貫通導体45を備えた第1積層体47を約1500℃~1800℃の温度で焼成することにより、焼結体を得る。なお、この工程によって、前述した第1ペースト46は、グリーンシート42と同時に焼成され、第1金属層となる。貫通導体、第2金属層、電極パッド、外部回路接続用電極についても同様である。
 次に、得られた焼結体を個片に分断することにより、電子素子実装用基板を得ることができる。この分断においては、先に形成した分割溝に沿って破断させて分割すればよい。また、分割溝を設けずとも、スライシング装置を用いて焼結体を分割してもよい。また、分割する前もしくは分割した後に、それぞれ電解または無電解めっき法を用いて、電極パッド、外部接続用パッドおよび焼結体の時点で露出している各金属層の表面にめっきを被着させてもよい。
 次に、得られた電子素子実装用基板に電子素子を実装することにより電子装置を得ることができる。電子素子は電子素子接続部材で電子素子実装用基板と電気的に接合させる。またこのとき、電子素子は、接着材等を用いて電子素子実装用基板に固定しても構わない。
 さらに、得られた電子装置において、電子素子を覆う筐体を備えることにより、電子モジュールを得ることができる。
 また、第2部分46bは、図8に示す例のように、1層目の金属ペーストと、2層目との金属ペーストを異ならせて形成することもできる。
 また、第2部分46bは、図9に示す例のように、第1絶縁層となる第1グリーンシート42a、第2絶縁層となる第2グリーンシート42bのそれぞれの所定位置に金属ペーストを塗布し、これらを積層することによっても得ることができる。この方法によれば、同一面に金属ペーストを複数回印刷するときは、2層目の印刷領域が1層目の金属ペースト上になるのに対し、印刷領域がグリーンシート42上であるため、スクリーンへの金属ペースト付着や付着による印刷精度低下のおそれが少なく、印刷自体が容易である。
  (第2の実施形態)
 第1金属層6は、例えばシグナルラインである場合がある。一般的に、シグナルラインについては、電源およびグランドの電位のパターンとは異なり、1つの貫通導体5で他の配線と導通する。そのため、貫通導体5とシグナルラインはより電気的な接続の信頼性が高く要求される。これに対し、本実施形態のようにシグナルライン(第1金属層6)が第2部6bを有している構造であることで、電気的な接続の信頼性を向上させることが可能となる。
 シグナルラインの一例を図10に示す。図10においては、第1方向における平面透視において、第1部6aが、貫通導体5に接して位置する第2部6bよりもx方向およびy方向において大きく、x方向の負側に延びている例を示している。
  (第3の実施形態)
 シグナルラインの他の例を図11に示す。図11においては、第1部6aが、貫通導体5に接して位置する第2部6bよりもy方向において小さく、第2部6bを基準にすれば第2部6bからx方向の負側に延びている例を示している。
 また、図11(b)に示す例のように第2層6b2が下側の絶縁層2と接するように位置していてもよい。このような構成を満たすときには、第2部6bが傾斜を有するものとなり、図11(b)において第2部6bの上部にエッジが立っているときと比較して、このエッジに対応する絶縁層2に係る応力が小さくなり、機械的特性の信頼性に優れる。
  (第4の実施形態)
 図12に示すように、第1絶縁層2aは、第1方向に直交する方向において、第1金属層6と貫通導体5とに挟まれた領域を有していてもよい。このような構成を満たすときには、貫通導体5および第1金属層6に熱が生じたり、熱が伝わったりした際に、貫通導体5と第1金属層6とのそれぞれの膨張を抑制することができる。
  (第5の実施形態)
 次に、第2部6bの他の例について図13を参照しつつ説明する。
 図13に示す例ように、第2部6bは、貫通導体5に向かって厚みが大きくなっていてもよい。このような構成を満たすときには、貫通導体5と第2部6bを含む第1金属層6との接続信頼性に優れる。また、このような構成を満たすときには、貫通導体5に向かって上り傾斜部分を有するものとなることから、貫通導体5と第2部6bのそれぞれに接する絶縁層2に角が立っているときと比較して、絶縁層2における角部に係る応力が小さいため、機械的特性の信頼性に優れる。
 図13に示す電子素子実装用基板1を製造する方法として例えば、第1部6aおよび第2部6bとなる金属ペーストを塗布し、グリーンシートの積層体を作製した後、貫通導体5となる部分に貫通孔を設ける工程において、例えば金型のピンの押し込んだ後のピンを戻すときのスピードを緩めることでピンに第2層6b1を追従させることにより、図13に示すような形状とすることが可能となる。
  (第6の実施形態)
 次に、第2部6bの他の例について図14を参照しつつ説明する。
 図14に示す例ように、第2部6bは、貫通導体5と接する第1領域R1と、第1領域R1と第1方向に直交する方向に並んで位置するとともに第1領域R1よりも貫通導体5から離れて位置する第2領域R2と、を有している。この第2領域R2の厚みが、第1領域R1の厚みよりも小さくてもよい。つまり、第2部6bは、第1方向に直交する方向における貫通導体5から離れた部分の厚みが小さくてもよい。このような構成を満たすときには、第2部6bよりも第1方向に直交する方向における貫通導体5から離れた部分に空隙が生じるおそれを少なくすることができる。また、第1部6aについても同様である。
 また、第1方向に直交する方向における貫通導体5から離れた部分の厚みが小さい一例としては、断面視形状がレンズ形状であってもよい。ここでレンズ形状とは、第2部6bが第1方向に直交する方向における貫通導体5から離れた部分に向かって、断面視形状で曲面に厚みが小さくなっているもののことである。
 このように、第2部6bがレンズ形状であるときには、空隙が生じるおそれをさらに少なくすることができる。
 なお、本開示は上述の実施形態の例に限定されるものではなく、数値などの種々の変形は可能である。また、例えば、各図に示す例では、電極パッド3の形状は上面視において矩形状であるが、円形状やその他の多角形状であってもかまわない。また、本実施形態における電極パッド3の配置、数、形状および電子素子の実装方法などは指定されない。なお、本実施形態における特徴部の種々の組み合わせは上述の実施形態の例に限定されるものでない。また、各実施形態同士の組み合わせも可能である。
1・・・・電子素子実装用基板
2・・・・絶縁層
2a・・・第1絶縁層
2b・・・第2絶縁層
2c・・・第3絶縁層
3・・・・電極パッド
4・・・・実装領域
5・・・・貫通導体
6・・・・第1金属層
6a・・・第1部
6b・・・第2部
6b1・・・第1層
6b2・・・第2層
6c・・・・他の金属層
7・・・・第1クリアランス部
8・・・・第2クリアランス部
9・・・・第2金属層
10・・・電子素子
12・・・蓋体
13・・・電子素子接続部材
14・・・蓋体接続部材
21・・・電子装置
31・・・電子モジュール
32・・・筐体
42・・・グリーンシート
42a・・第1グリーンシート
42b・・第2グリーンシート
45・・・貫通導体
46・・・金属層(金属ペースト)
46a・・第1部
46b・・第2部
47・・・第1積層体
48・・・第2積層体
R1・・・第1領域
R2・・・第2領域
 

Claims (11)

  1.  第1方向に並んで位置する第1絶縁層および第2絶縁層と、
     前記第1絶縁層および前記第2絶縁層の間に位置する第1金属層と、
     前記第1絶縁層から前記第2絶縁層にわたって前記第1方向に延びる貫通導体と、を備え、
     前記第1金属層は、前記貫通導体から離れて位置する第1部と、前記貫通導体に接する第2部と、を有しており、
     前記第2部の厚みは、前記第1部の厚みよりも大きい、電子素子実装用基板。
  2.  前記第2部は、第1クリアランス部によって前記第1部と離れて位置している、請求項1に記載の電子素子実装用基板。
  3.  前記第2絶縁層と前記第1方向に並んで位置する第3絶縁層と、
     前記第2絶縁層および前記第3絶縁層の間に位置する第2金属層と、をさらに備え、
     前記貫通導体は、前記第1絶縁層から前記第3絶縁層にわたって前記第1方向に延び、
     前記貫通導体は、第2クリアランス部によって前記第2金属層と離れて位置している、請求項1または請求項2に記載の電子素子実装用基板。
  4.  前記第1方向における平面透視において、前記第2クリアランス部は、前記第2部内に位置する、請求項3に記載の電子素子実装用基板。
  5.  前記第1方向における平面透視において、前記第2部は、前記第2クリアランス部内に位置する、請求項3に記載の電子素子実装用基板。
  6.  前記第2部は、前記貫通導体と接する第1領域と、前記第1領域と前記第1方向に直交する方向に並んで位置するとともに前記第1領域よりも前記貫通導体から離れて位置する第2領域と、を有しており、
    前記第2領域の厚みが、前記第1領域の厚みよりも小さい、請求項1乃至請求項5のいずれかに記載の電子素子実装用基板。
  7.  前記第1絶縁層は、前記第1方向に直交する方向において、前記第1金属層と前記貫通導体とに挟まれた領域を有する、請求項1乃至請求項6のいずれかに記載の電子装置実装用基板。
  8.  請求項1~7のいずれか1つに記載の電子素子実装用基板と、
    前記電子素子実装用基板に実装された電子素子と、を備えている、電子装置。
  9.  請求項8に記載の電子装置と、
    前記電子装置に備わる前記電子素子を覆う筐体と、を備えている、電子モジュール。
  10.  第1絶縁層および第2絶縁層を準備する第1工程と、
     前記第2絶縁層に、厚みに違いを有する第1金属層を配置する第2工程と、
     前記第1金属層を挟んで前記第2絶縁層に前記第1絶縁層を積層し、第1積層体を得る第3工程と、
     積層方向において、前記第1金属層における厚みの大きい部分を貫通するように前記第1積層体を貫通する貫通孔を形成する第4工程と、
     前記貫通孔内に貫通導体を形成する第5工程と、を備える、電子素子実装用基板の製造方法。
  11.  金属層Aと、金属層Bと、第1絶縁層および第2絶縁層とを準備する工程Aと、
     前記第1絶縁層および前記第2絶縁層との間に、少なくとも一部が互いに重なるように前記金属層Aおよび前記金属層Bを配置する工程Bと、
     前記第1絶縁層、前記金属層Aおよび前記金属層B、前記第2絶縁層を順に積層して、第2積層体を得る工程Cと、
     積層方向において、前記金属層Aおよび前記金属層Bが互いに重なっている部分を貫通するように前記第2積層体を貫通する貫通孔を形成する工程Dと、
     前記貫通孔内に貫通導体を形成する工程Eと、を備える、電子素子実装用基板の製造方法。
     
PCT/JP2020/029070 2019-07-30 2020-07-29 電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法 WO2021020447A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021535388A JP7212783B2 (ja) 2019-07-30 2020-07-29 電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法
CN202080053636.6A CN114175233A (zh) 2019-07-30 2020-07-29 电子元件安装用基板、电子装置、电子模块以及电子元件安装用基板的制造方法
US17/630,194 US20220270958A1 (en) 2019-07-30 2020-07-29 Electronic element mounting substrate, electronic device, electronic module, and method for manufacturing electronic element mounting substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-139890 2019-07-30
JP2019139890 2019-07-30

Publications (1)

Publication Number Publication Date
WO2021020447A1 true WO2021020447A1 (ja) 2021-02-04

Family

ID=74229957

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/029070 WO2021020447A1 (ja) 2019-07-30 2020-07-29 電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法

Country Status (4)

Country Link
US (1) US20220270958A1 (ja)
JP (1) JP7212783B2 (ja)
CN (1) CN114175233A (ja)
WO (1) WO2021020447A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165355A (ja) * 2004-12-09 2006-06-22 Matsushita Electric Ind Co Ltd 多層配線基板とその製造方法
JP2009289805A (ja) * 2008-05-27 2009-12-10 Kyocera Corp 部品内蔵基板
JP2014033004A (ja) * 2012-08-01 2014-02-20 Ngk Spark Plug Co Ltd 多層セラミック基板及びその製造方法
JP2017107933A (ja) * 2015-12-08 2017-06-15 新光電気工業株式会社 配線基板及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165355A (ja) * 2004-12-09 2006-06-22 Matsushita Electric Ind Co Ltd 多層配線基板とその製造方法
JP2009289805A (ja) * 2008-05-27 2009-12-10 Kyocera Corp 部品内蔵基板
JP2014033004A (ja) * 2012-08-01 2014-02-20 Ngk Spark Plug Co Ltd 多層セラミック基板及びその製造方法
JP2017107933A (ja) * 2015-12-08 2017-06-15 新光電気工業株式会社 配線基板及びその製造方法

Also Published As

Publication number Publication date
CN114175233A (zh) 2022-03-11
US20220270958A1 (en) 2022-08-25
JPWO2021020447A1 (ja) 2021-02-04
JP7212783B2 (ja) 2023-01-25

Similar Documents

Publication Publication Date Title
JP5823043B2 (ja) 電子素子搭載用基板、電子装置および撮像モジュール
JP6096812B2 (ja) 電子素子搭載用パッケージ、電子装置および撮像モジュール
JP2019029401A (ja) 電子素子実装用基板、電子装置および電子モジュール
JP7072644B2 (ja) 電子素子実装用基板、電子装置、および電子モジュール
JP6974499B2 (ja) 電子素子実装用基板、電子装置および電子モジュール
JP7062569B2 (ja) 電子素子実装用基板、電子装置、および電子モジュール
WO2021020447A1 (ja) 電子素子実装用基板、電子装置、電子モジュールおよび電子素子実装用基板の製造方法
JP7210191B2 (ja) 電子素子実装用基板、電子装置、および電子モジュール
JP7088749B2 (ja) 電子素子実装用基板、電子装置、および電子モジュール
US10681831B2 (en) Electronic component mounting board, electronic device, and electronic module
JP2013077739A (ja) 配線基板ならびにその配線基板を備えた電子装置および電子モジュール装置
JP7242870B2 (ja) 実装基板および電子装置
JP7307161B2 (ja) 電子素子実装用基板、電子装置、および電子モジュール
JP2020053578A (ja) 回路基板および電子部品
JP6382615B2 (ja) 配線基板、電子装置および電子装置の実装構造
WO2020158808A1 (ja) 電子部品実装用基体および電子装置
JP2019079987A (ja) 電子素子実装用基板、電子装置および電子モジュール
JP7227019B2 (ja) 電子素子実装用基板、電子装置、および電子モジュール
JP4733061B2 (ja) 複数個取り配線基台、配線基台および電子装置、ならびに複数個取り配線基台の分割方法
JP2021158322A (ja) 実装基板、電子装置、および電子モジュール
JP2013098236A (ja) 配線基板ならびにその配線基板を備えた電子装置および電子モジュール装置
JP2019062087A (ja) 電子素子実装用基板、電子装置および電子モジュール

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20848650

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021535388

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20848650

Country of ref document: EP

Kind code of ref document: A1