WO2020261353A1 - Appareil pour un dispositif de commutation d'entraînement - Google Patents

Appareil pour un dispositif de commutation d'entraînement Download PDF

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Publication number
WO2020261353A1
WO2020261353A1 PCT/JP2019/025030 JP2019025030W WO2020261353A1 WO 2020261353 A1 WO2020261353 A1 WO 2020261353A1 JP 2019025030 W JP2019025030 W JP 2019025030W WO 2020261353 A1 WO2020261353 A1 WO 2020261353A1
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Prior art keywords
switching
voltage
switching element
output
drive
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PCT/JP2019/025030
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English (en)
Japanese (ja)
Inventor
陽平 三井
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三菱電機株式会社
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Priority to JP2021528675A priority Critical patent/JP7086291B2/ja
Priority to PCT/JP2019/025030 priority patent/WO2020261353A1/fr
Publication of WO2020261353A1 publication Critical patent/WO2020261353A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Definitions

  • the present disclosure relates to a driving device for a switching device.
  • IGBTs Insulated Gate Bipolar Transistors
  • MOSFETs Metal Oxide Semiconductor Field Effect Transistors
  • the switching loss By reducing the switching loss, the amount of heat generated by the switching device is reduced, so that the cooling mechanism of the power converter can be simplified and the power converter can be miniaturized. Further, by reducing the switching loss, wasteful power consumption is reduced, so that power conversion can be performed efficiently. Therefore, in order to realize miniaturization and high efficiency of the power converter, it is desirable to reduce the switching loss of the switching device.
  • Switching loss can be reduced by increasing the switching speed.
  • the switching speed can be increased by increasing the voltage change rate near the gate threshold voltage of the switching device.
  • Patent Document 1 As a method for reducing switching loss, the state of a switching device is monitored, and the gate voltage source and gate resistance value are feedback-controlled based on the result. Discloses a method for increasing the switching speed at turn-on.
  • Patent Document 1 requires a control circuit for performing feedback control, and has a problem that the circuit becomes complicated.
  • the present disclosure has been made to solve the above-mentioned problems, and an object of the present invention is to provide a drive device capable of reducing switching loss while suppressing deterioration of a switching device with a simple circuit configuration. It is to be.
  • the drive device is a drive device for a switching device, and includes a first switching element and a first output device that outputs a voltage to the gate of the switching device via the first switching element.
  • the first output device is via a pair of output terminals connected to the switching device via the first switching element, a capacitor connected between the pair of output terminals, a second switching element, and a second switching element. It is connected to a capacitor and has a first power supply that outputs a voltage having an absolute value larger than a predetermined drive voltage.
  • the first switching element is turned off before the switching operation of the switching device is performed, and operates so as to turn on when the switching operation of the switching device is performed.
  • the second switching element is turned on before the switching operation of the switching device is performed, and operates so as to turn off when the switching operation of the switching device is performed.
  • the capacitor is connected to the first power supply via the second switching element before the switching operation of the switching device is performed, and the capacitor is charged at a voltage higher than the drive voltage. Then, when the switching operation of the switching device is performed, a capacitor charged with a voltage having an absolute value larger than the drive voltage is connected to the gate of the switching device via the first switching element. Therefore, in the initial stage of the switching operation of the switching device, a voltage having an absolute value larger than the drive voltage is output from the drive device. As a result, the rate of change of the gate voltage of the switching device can be increased, and the switching rate can be increased.
  • the output voltage of the drive device decreases as the gate voltage of the switching device rises, and when the gate voltage reaches the output voltage of the drive device, the gate voltage becomes The rise stops. This prevents the gate voltage from becoming an excessive voltage. Therefore, it is possible to prevent the gate voltage of the switching device from becoming excessively high without providing a dedicated voltage limiting mechanism. As a result, it is possible to reduce the switching loss while suppressing the deterioration of the switching device with a simple circuit configuration.
  • FIG. 1 which shows an example of the circuit structure of a drive device. It is a timing chart (No. 1) for explaining the operation of a drive device. It is a figure (the 2) which shows an example of the circuit structure of a drive device. It is a timing chart (No. 2) for explaining the operation of a drive device. It is a figure (the 3) which shows an example of the circuit structure of a drive device. It is a figure (the 4) which shows an example of the circuit structure of a drive device.
  • FIG. 5 is a diagram (No. 5) showing an example of the circuit configuration of the drive device. It is a figure (the 6) which shows an example of the circuit structure of a drive device.
  • FIG (7) which shows an example of the circuit structure of a drive device. It is a figure (8) which shows an example of the circuit structure of a drive device. It is a timing chart (No. 3) for explaining the operation of the drive device. It is a figure (9) which shows an example of the circuit structure of a drive device.
  • FIG. 1 is a diagram showing an example of a circuit configuration of the drive device 100 according to the first embodiment.
  • the drive device 100 is connected to the switching device 1 for electric power and is configured to drive the switching device 1.
  • the drive device 100 is configured to increase the switching speed when the switching device 1 turns on.
  • the switching device 1 is a MOSFET
  • the MOSFET when the gate voltage (gate-source voltage) is less than the gate threshold voltage Vth, the MOSFET is in an off state in which no drain current (current flowing between the source and drain) is generated, and the gate voltage becomes high. It is configured to be in an ON state in which a drain current is generated when the gate threshold voltage is Vth or higher.
  • the voltage output by the drive device 100 to the switching device 1 is also referred to as a “driver output voltage”.
  • the driver output voltage when the drive device 100 puts the switching device 1 in the steady on state is also referred to as “drive voltage Von”
  • the driver output voltage when the drive device 100 puts the switching device 1 in the steady off state is “driven”.
  • voltage Voff Also referred to as "voltage Voff”.
  • the drive voltage Von is set to a value equal to or higher than the gate threshold voltage Vth of the switching device 1.
  • the drive voltage Voff is set to a value less than the gate threshold voltage Vth of the switching device 1.
  • the switching elements E1, E2, F1 and F2 described below will also be described in the case of MOSFETs as in the case of the switching device 1.
  • the switching device 1 and the switching elements E1, E2, F1, and F2 are not limited to MOSFETs, and may be, for example, IGBTs.
  • the switching device 1 is applicable to wide bandgap semiconductors such as SiC (silicon carbide) and GaN (gallium nitride), and devices made of Si (silicon) as a material.
  • SiC silicon carbide
  • GaN gallium nitride
  • the drive device 100 includes a gate drive circuit 11, an output device 21, a switching element E1, a gate resistor R1, a pull-down resistor R2, an adjustment resistor R3 for speed adjustment, and a pair of output terminals Tp, Tn (positive side). It has a terminal Tp and a negative terminal Tn).
  • the output device 21 includes a pair of output terminals 22 and 23.
  • the output terminals Tp and Tn of the drive device 100 are connected to the gate and source of the switching device 1, respectively.
  • a gate resistor 2 for adjusting the charging speed of the gate is provided between the output terminal Tp of the drive device 100 and the gate terminal of the drive device 200.
  • the source terminal of the switching element E1 is connected to the positive terminal Tp of the drive device 100 via the gate resistor R1.
  • the drain terminal of the switching element E1 is connected to the output terminal 22 of the output device 21 via the adjustment resistor R3.
  • the gate terminal of the switching element E1 is connected to the gate drive circuit 11 and receives the gate voltage from the gate drive circuit 11.
  • the output device 21 includes a capacitor C1, a switching element F1, and a voltage source B1 in addition to the output terminals 22 and 23.
  • the capacitor C1 is connected between the output terminals 22 and 23 of the output device 21 and stores the electric charge required for switching of the switching device 1.
  • the source terminal of the switching element F1 is connected to the output terminal 22 of the output device 21.
  • the drain terminal of the switching element F1 is connected to the positive electrode of the voltage source B1.
  • the gate terminal of the switching element F1 is connected to the gate drive circuit 11 and receives the gate voltage from the gate drive circuit 11.
  • the voltage source B1 is connected to the capacitor C1 via the switching element F1. Specifically, the positive electrode of the voltage source B1 is connected to one end of the capacitor C1 via the switching element F1, and the negative electrode of the voltage source B1 is connected to the other end of the capacitor C1 and the output terminal 23 of the output device 21.
  • the voltage source B1 is configured to output a voltage V1 higher than the drive voltage Von of the switching device 1.
  • the pull-down resistor R2 is a resistor for equalizing the gate potential and the source potential of the switching device 1 when the switching element E1 is off.
  • the gate resistor R1 and the adjustment resistor R3 are resistors for adjusting the switching speed of the switching element E1.
  • the gate drive circuit 11 controls the on / off of the switching elements E1 and F1 by applying gate voltages to the switching elements E1 and F1 at predetermined timings based on the gate signal input from the outside.
  • the gate drive circuit 11 is configured so that the on / off of the switching element E1 and the on / off of the switching element F1 can be controlled separately.
  • FIG. 2 is a timing chart for explaining the operation of the drive device 100 when the drive device 100 turns on the switching device 1.
  • the horizontal axis represents time
  • the vertical axis represents the state of the switching element E1, the state of the switching element F1, the voltage across the capacitor C1, the driver output voltage, and the gate voltage of the switching device 1 in order from the top.
  • the switching device 1 Before time t1, the switching device 1 is in the off state (the state before turning on). In this state, the switching element E1 is in the off state and the switching element F1 is in the on state. When the switching element F1 is in the ON state, the output voltage V1 of the voltage source B1 is applied to the capacitor C1, and the capacitor C1 is charged. As a result, the voltage across the capacitor C1 becomes the same value as the output voltage V1 of the voltage source B1, that is, a value higher than the drive voltage Von. On the other hand, since the switching element E1 is off, the capacitance between the gate and the source of the switching device 1 is in a state of being discharged by the pull-down resistor R2, and the gate potential of the switching device 1 and the source potential are equal to each other. is there.
  • the gate drive circuit 11 When a turn-on command is input to the gate drive circuit 11 from the outside at time t1, the gate drive circuit 11 turns off the switching element F1 and disconnects the capacitor C1 from the voltage source B1.
  • the gate drive circuit 11 turns on the switching element E1.
  • the voltage across the capacitor C1 is output from the drive device 100, and the gate of the switching device 1 is charged by the electric charge stored in the capacitor C1.
  • the voltage across the capacitor C1 that is, the voltage V1 higher than the drive voltage Von, is output from the drive device 200.
  • the rate of increase of the gate voltage near the gate threshold voltage Vth can be increased as compared with the case of constant voltage drive (when the drive device 100 outputs a constant drive voltage Von), so that the switching device 1 Can be switched (turned on) at high speed.
  • the voltage across the capacitor C1 gradually decreases with the passage of time, and becomes a steady state at a voltage Vst equal to the gate voltage of the switching device 1.
  • the voltage Vst can be obtained by using the following equation (1).
  • V1 x CA1 (CA1 + Ciss) x Vst ... (1)
  • V1 indicates the output voltage of the voltage source B1
  • CA1 indicates the capacitance of the capacitor C1
  • Ciss indicates the input capacitance of the switching device 1 (capacitance between gate and source and gate drain).
  • the total capacity which is the sum of the capacity and the capacity).
  • the left side of the equation (1) shows the amount of charge stored in the capacitor C1 before the switching element E1 is turned on, and the right side shows the amount of charge stored in the capacitor C1 after the switching element E1 is turned on and the gate source of the switching device 1. Shows the sum with the amount of charge accumulated in between.
  • the voltage Vst at which the voltage across the capacitor C1 becomes equal to the gate voltage of the switching device 1 and becomes a steady state after the switching device 1 is turned on is the output voltage V1 of the voltage source B1 and the capacitor C1. It can be adjusted by the capacity CA1 of. Specifically, it increases by increasing the output voltage V1 of the voltage source B1 and the capacitance CA1 of the capacitor C1, and decreases by decreasing the output voltage V1 of the voltage source B1 and the capacitance CA1 of the capacitor C1.
  • the gate voltage of the switching device 1 in the steady-on state is set to the drive voltage Von.
  • the capacitance CA1 of the capacitor C1 to a value equivalent to the input capacitance of the switching device 1 and setting the output voltage V1 of the voltage source B1 to twice the drive voltage Von, the driver output voltage at the initial stage of switching is driven.
  • the driver output voltage in the steady state can be made equal to the drive voltage Von while doubling the voltage Von.
  • the drive device 100 includes a switching element E1 (first switching element) and an output device 21 (first output device).
  • the output device 21 includes a pair of output terminals 22 and 23 connected to the switching device 1 via the switching element E1, a capacitor C1 connected between the pair of output terminals 22 and 23, and a switching element F1 (second). It has a switching element) and a voltage source B1 (first power supply) that is connected to the capacitor C1 via the switching element F1 and outputs a voltage V1 having an absolute value larger than the drive voltage Von.
  • the switching element E1 turns off when the switching device 1 is in the off state (state before turn-on), and operates so as to turn on when the switching device 1 turns on.
  • the switching element F1 is turned on when the switching device 1 is in the off state (state before turn-on), and operates so as to be turned off when the switching device 1 is turned on.
  • the capacitor C1 since the capacitor C1 is connected to the voltage source B1 via the switching element F1 before the switching device 1 is turned on, the capacitor C1 is charged by the voltage V1 output by the voltage source B1. Then, when the switching device 1 is turned on, the capacitor C1 is connected to the gate of the switching device 1 via the switching element E1, so that the driver output voltage becomes the voltage V1. As a result, the gate voltage of the switching device 1 rises, and the turn-on operation of the switching device 1 is performed.
  • the voltage V1 is set to a value having an absolute value larger than the drive voltage Von. Therefore, in the initial stage of the turn-on operation, the driver output voltage becomes a value higher than the drive voltage Von. As a result, the rate of increase near the gate threshold voltage Vth in the gate voltage of the switching device 1 can be increased as compared with the case where the driver output voltage is a constant drive voltage Von, and the switching speed (turn-on speed) is increased. be able to.
  • the driver output voltage (voltage across the capacitor C1) becomes lower than the voltage V1 as the gate voltage rises, and when the gate voltage reaches the driver output voltage, the gate voltage rises. Stop. Therefore, it is prevented that the gate voltage becomes an excessive voltage. As a result, it is possible to prevent the gate voltage from becoming excessively high without providing a dedicated voltage limiting mechanism.
  • FIG. 3 is a diagram showing an example of the circuit configuration of the drive device 200 according to the second embodiment.
  • the drive device 200 is connected to the switching device 1 and is configured to increase the switching speed at the turn-off of the switching device 1.
  • the drive device 200 includes a voltage source 5, a gate drive circuit 11, an output device 41, a switching element E2, a gate resistor R1, resistors R4 and R5, and a pair of output terminals Tp and Tn.
  • the output terminals Tp and Tn of the drive device 200 are connected to the gate and the source of the switching device 1, respectively.
  • the output device 41 includes a pair of output terminals 42, 43.
  • the positive electrode of the voltage source 5 is connected to the output terminal 43 of the output device 41, and is also connected to the positive terminal Tp of the drive device 200 via the resistor R4 and the gate resistor R1.
  • the negative electrode of the voltage source 5 is connected to the negative terminal Tn of the drive device 200.
  • the output voltage of the voltage source 5 is preset so as to be the drive voltage Von.
  • the source terminal of the switching element E2 is connected to the output terminal 42 of the output device 41 via the resistor R5.
  • the drain terminal of the switching element E2 is connected to the output terminal 43 of the output device 41 via the resistor R4, and is also connected to the positive terminal Tp of the drive device 200 via the gate resistor R1.
  • the gate terminal of the switching element E2 is connected to the gate drive circuit 11 and receives the gate voltage from the gate drive circuit 11.
  • the output device 41 includes a capacitor C2, a switching element F2, and a voltage source B2 in addition to the output terminals 42 and 43.
  • the capacitor C2 is connected between the output terminals 42 and 43 of the output device 41 and stores the electric charge required for switching the switching device 1.
  • the source terminal of the switching element F2 is connected to the output terminal 42 of the output device 41.
  • the drain terminal of the switching element F2 is connected to the negative electrode of the voltage source B1.
  • the gate terminal of the switching element F2 is connected to the gate drive circuit 11 and receives the gate voltage from the gate drive circuit 11.
  • the voltage source B2 is connected to the capacitor C2 via the switching element F2. Specifically, the negative electrode of the voltage source B2 is connected to one end of the capacitor C2 via the switching element F2, and the positive electrode of the voltage source B2 is connected to the other end of the capacitor C2 and the output terminal 43 of the output device 41.
  • the voltage source B2 is configured to output a voltage V2 having an absolute value larger than the drive voltage Von of the switching device 1.
  • the gate drive circuit 11 controls on / off of the switching elements E2 and F2 by applying a gate voltage to the switching elements E2 and F2 at a timing specified in advance based on a gate signal input from the outside.
  • the gate drive circuit 11 is configured so that the on / off of the switching element E2 and the on / off of the switching element F2 can be controlled separately.
  • FIG. 4 is a timing chart for explaining the operation of the drive device 200 when the drive device 200 turns off the switching device 1.
  • the horizontal axis represents time
  • the vertical axis represents the state of the switching element E2, the state of the switching element F2, the voltage across the capacitor C2, the driver output voltage, and the gate voltage of the switching device 1 in this order from the top.
  • the voltage across the capacitor C2 is the other end (upper side in FIG. 4) from the potential of the side end (lower end in FIG. 4) of the capacitor C2 connected to the switching element F2. It is shown by subtracting the potential of).
  • the switching device 1 Before time t11, the switching device 1 is on (the state before turning off). In this state, the switching element E2 is in the off state and the switching element F2 is in the on state. When the switching element F2 is in the ON state, the output voltage V2 of the voltage source B2 is applied to the capacitor C2, and the capacitor C2 is charged. As a result, the magnitude (absolute value) of the voltage across the capacitor C2 becomes the same value as the output voltage V2 of the voltage source B2, that is, a value larger than the magnitude of the drive voltage Von.
  • the negative electrode of the voltage source B2 is connected to the end of the capacitor C2 connected to the switching element F2 and the positive electrode of the voltage source B2 is connected to the other end, it is connected to the switching element F2 of the capacitor C2.
  • the potential at the end on the side to be squeezed is lower than the potential at the other end.
  • the voltage across the capacitor C2 becomes "-V2" as shown in FIG.
  • the switching element E2 since the switching element E2 is in the off state, the driver output voltage and the gate voltage become the drive voltage Von when the output voltage of the voltage source 5 is output from the drive device 200.
  • the gate drive circuit 11 When a turn-off command is input to the gate drive circuit 11 from the outside at time t11, the gate drive circuit 11 turns off the switching element F2 and disconnects the capacitor C2 from the voltage source B2.
  • the gate drive circuit 11 turns on the switching element E2.
  • the voltage across the capacitor C2 "-V2" is output from the drive device 200. Since the magnitude of the voltage across the capacitor C2 "-V2" is larger than the magnitude of the drive voltage Von, the driver output voltage instantly drops from the drive voltage Von higher than the drive voltage Voff to a value lower than the drive voltage Voff. To do.
  • the rate of decrease of the gate voltage near the gate threshold voltage Vth can be increased as compared with the case of constant voltage drive (when the drive device 200 outputs a constant drive voltage Voff), so that the switching device 1 Can be switched (turned off) at high speed.
  • the voltage across the capacitor C2 gradually increases with the passage of time, and becomes a steady state at a voltage Vst equal to the gate voltage of the switching device 1.
  • the voltage Vst can be obtained by using the following equation (2).
  • V2 indicates the output voltage of the voltage source B2
  • CA2 indicates the capacitance of the capacitor C2
  • Ciss indicates the input capacitance of the switching device 1.
  • the left side of the equation (2) shows the total of the amount of charge accumulated in the capacitor C2 before the turn-off of the switching element E2 and the amount of electric charge accumulated between the gate and source of the switching device 1, and the right side shows the turn-off of the switching element E2.
  • the sum of the amount of electric charge accumulated in the capacitor C2 and the amount of electric charge accumulated in the switching device 1 is shown later.
  • the voltage Vst at which the voltage across the capacitor C2 becomes a steady state after the switching device 1 is turned off can be adjusted by the output voltage V2 of the voltage source B2 and the capacitance CA2 of the capacitor C2. Specifically, it decreases by increasing the output voltage V2 of the voltage source B2 and the capacitance CA2 of the capacitor C2, and increases by decreasing the output voltage V2 of the voltage source B2 and the capacitance CA2 of the capacitor C2.
  • the gate voltage of the switching device 1 in the steady-off state is set to the drive voltage Voff. Can be matched.
  • a gate drive circuit capable of high-speed switching at the time of turn-off of the switching device 1 can be realized.
  • the drive device 200 includes a switching element E2 (first switching element) and an output device 41 (first output device).
  • the output device 41 includes a pair of output terminals 42, 43 connected to the switching device 1 via the switching element E2, a capacitor C2 connected between the pair of output terminals 42, 43, and a switching element F2 (second). It has a switching element) and a voltage source B2 (first power supply) that is connected to the capacitor C2 via the switching element F2 and outputs a voltage V2 having an absolute value larger than the drive voltage Von.
  • the switching element E2 is turned off when the switching device 1 is in the on state (state before turn-off), and operates so as to be turned on when the switching device 1 is turned off.
  • the switching element F2 is turned on when the switching device 1 is in the on state (state before turn-off), and operates so as to turn off when the switching device 1 is turned off.
  • the capacitor C2 since the capacitor C2 is connected to the voltage source B2 via the switching element F2 before the switching device 1 is turned off, the capacitor C2 is charged by the voltage "-V2" output by the voltage source B2. To. Then, when the switching device 1 is turned off, the capacitor C2 is connected to the gate of the switching device 1 via the switching element E2, so that the voltage “ ⁇ V2” is output from the drive device 200. As a result, the gate voltage of the switching device 1 is lowered, and the turn-off operation of the switching device 1 is performed.
  • the magnitude (absolute value) of the voltage V2 is set to a value larger than the magnitude of the drive voltage Von. Therefore, in the initial stage of the turn-off operation, the driver output voltage becomes a value lower than the drive voltage Voff. As a result, the rate of decrease near the gate threshold voltage Vth in the gate voltage of the switching device 1 can be increased as compared with the case where the driver output voltage is a constant drive voltage Voff. As a result, the switching speed (turn-off speed) can be increased as in the first embodiment described above.
  • FIG. 5 is a diagram showing an example of the circuit configuration of the drive device 300 according to the third embodiment.
  • the drive device 300 is an improved version of the drive device 100 shown in FIG. 1 described above so as to enable negative bias output. Specifically, the drive device 300 removes the pull-down resistor R2, adds a voltage source 40, and adds a switching element E2 shown in FIG. 3 to the drive device 100 shown in FIG. It is connected in series with the switching element E1. Since the other configurations of the drive device 300 are the same as those of the drive device 100 described above, the detailed description here will not be repeated.
  • the positive electrode of the voltage source 40 is connected to the negative terminal Tn of the drive device 300.
  • the negative electrode of the voltage source 40 is connected to the positive terminal Tp of the drive device 300 via the switching element E2.
  • the output voltage of the voltage source 40 is preset so as to be the drive voltage Voff.
  • the switching element E2 is controlled by the gate drive circuit 11 and operates complementarily with the switching element E1. That is, when the switching element E1 is in the on state, the switching element E2 is in the off state, and when the switching element E1 is in the off state, the switching element E2 is in the on state.
  • a negative bias to the switching device 1 (apply a negative voltage having a magnitude of the drive voltage Voff) when the switching device 1 is constantly off.
  • a negative voltage is applied to the input capacitance before the switching device 1 is turned on. Therefore, the voltage Vst at which the voltage across the capacitor C1 becomes a steady state after the switching device 1 is turned on is represented by the following equation (3).
  • FIG. 6 is a diagram showing an example of the circuit configuration of the drive device 400 according to the fourth embodiment.
  • the drive device 400 is an improved version of the drive device 200 shown in FIG. 3 described above so as to enable positive bias output. Specifically, the drive device 400 removes the resistor R4 and the voltage source 5 from the drive device 200 shown in FIG. 3 above, adds a voltage source 20, and adds the switching element E1 shown in FIG. 1 above. In addition, it is connected in series with the switching element E2. Since the other configurations of the drive device 400 are the same as those of the drive device 200 described above, the detailed description here will not be repeated.
  • the positive electrode of the voltage source 40 is connected to the positive terminal Tp of the drive device 300 via the switching element E1.
  • the negative electrode of the voltage source 20 is connected to the output terminal 43 of the output device 41 and the negative terminal Tn of the drive device 300.
  • the output voltage of the voltage source 20 is preset so as to be the drive voltage Von.
  • the switching element E1 is controlled by the gate drive circuit 11 and operates complementaryly with the switching element E2. As a result, it is possible to apply a positive bias to the switching device 1 (apply a positive voltage having a magnitude of the drive voltage Von) when the switching device 1 is constantly turned on. Therefore, the voltage Vst at which the voltage across the capacitor C2 becomes a steady state after the switching device 1 is turned off is expressed by the following equation (4).
  • FIG. 7 is a diagram showing an example of the circuit configuration of the drive device 500 according to the fifth embodiment.
  • the drive device 500 is a combination of the configuration of the drive device 300 shown in FIG. 5 and the configuration of the drive device 400 shown in FIG. Specifically, the drive device 500 is obtained by removing the voltage source 40 and connecting the output device 41 and the resistor R5 shown in FIG. 6 to the drive device 300 shown in FIG. 5 above. The resistor R5 adjusts the switching speed.
  • the configuration of the drive device 500 is a combination of the configuration of the drive device 300 and the configuration of the drive device 400 described above, detailed description of the operation of the drive device 500 will be omitted, but a circuit configuration similar to that of the drive device 500 will be used. As a result, high-speed switching is possible at both the turn-off time and the turn-on time of the switching device 1.
  • Embodiment 6 voltage fluctuation due to leakage current may occur in a steady state.
  • the gate voltage of the switching device 1 decreases with the passage of time due to the pull-down resistor R2.
  • the gate voltage may become unstable because there is no mechanism for fixing the gate potential in a steady state.
  • a voltage stabilizing circuit for stabilizing the gate voltage is added.
  • FIG. 8 is a diagram showing an example of the circuit configuration of the drive device 600 according to the sixth embodiment.
  • the drive device 600 is a device in which the output device 21 is replaced with the output device 21a with respect to the drive device 100 shown in FIG. 1 described above. Since the other configurations of the drive device 600 are the same as those of the drive device 100 shown in FIG. 1 described above, the detailed description here will not be repeated.
  • the output device 21a is an output device 21 shown in FIG. 1 described above with a voltage stabilizing circuit added.
  • a diode D1 and a voltage source B1a for stabilization are connected in series between the output terminals 22 and 23 of the output device 21a.
  • the output voltage of the voltage source B1a for stabilization is set to the drive voltage Von.
  • the diode D1 becomes conductive when the voltage of the capacitor C1 drops to the drive voltage Von, and the drive voltage from the voltage source B1a for stabilization is provided.
  • the Von is output from the drive device 600. Therefore, the driver output voltage in the steady state after turn-on becomes a constant drive voltage Von and stabilizes.
  • FIG. 8 shows an example of adding the voltage stabilization circuit to the drive device 100 shown in FIG. 1, the voltage stabilization circuit can be added to the other drive devices 200 to 500.
  • the voltage source B1a since the voltage source B1a only supplies the current for the leakage current, the capacity of the voltage source B1a may be small. Therefore, instead of the voltage source B1a, a resistor that divides the voltage from the voltage source B1 may be provided.
  • FIG. 9 is a diagram showing an example of the circuit configuration of the drive device 601 according to the modified example of the sixth embodiment.
  • the drive device 601 shown in FIG. 9 is obtained by replacing the output device 21a with the output device 21b with respect to the drive device 600 shown in FIG.
  • the output device 21b replaces the voltage source B1a with the voltage dividing resistors R6 and R7 for dividing the voltage from the voltage source B1 with respect to the output device 21a.
  • the circuit configuration can be simplified.
  • Embodiment 7 The output devices 21, 21a, 21b, and 41 in the above-described first to sixth embodiments cannot charge the capacitors C1 and C2 until the connection with the gate of the switching device 1 is disconnected. Therefore, when the switching cycle (pulse interval) of the switching element E1 is short, there is a concern that the next switching will occur before the charging of the capacitors C1 and C2 is completed.
  • the capacitor C1 since the capacitor C1 is conducting with the gate of the switching device 1 while the switching element E1 is on, the capacitor C1 is not charged and the switching element E1 is turned off. After that, the capacitor C1 is charged. Therefore, when the switching element E1 is turned off for a short period of time, the next switching may occur before the charging of the capacitor C1 is completed.
  • a disconnection switching element for disconnecting the capacitors C1 and C2 and the gate of the switching device 1 is added.
  • FIG. 10 is a diagram showing an example of the circuit configuration of the drive device 700 according to the seventh embodiment.
  • the drive device 700 shown in FIG. 10 is obtained by replacing the output device 21a with the output device 21c with respect to the drive device 600 shown in FIG.
  • the output device 21c is an output device 21a to which a switching element F1a for disconnection is added.
  • the switching element F1a is provided between the capacitor C1 and the cathode of the diode D1.
  • FIG. 11 is a timing chart for explaining the operation of the drive device 700 when the drive device 700 turns on the switching device 1.
  • the horizontal axis represents time
  • the vertical axis indicates the state of the switching element E1, the state of the switching element F1, the state of the switching element F1a, the voltage across the capacitor C1, the driver output voltage, and the switching device 1 in this order from the top. Indicates the gate voltage.
  • the switching device 1 Before time t21, the switching device 1 is in the off state (the state before turning on). In this state, the switching element E1 is in the off state, the switching element F1 is in the on state, and the switching element F1a is in the off state.
  • the gate drive circuit 11 When a turn-on command is input to the gate drive circuit 11 from the outside at time t21, the gate drive circuit 11 turns off the switching element F1 and disconnects the capacitor C1 from the voltage source B1.
  • the gate drive circuit 11 turns on the switching element E1 and turns on the switching element F1a.
  • the voltage across the capacitor C1 is output from the drive device 700 via the switching elements F1a and E1, and the gate of the switching device 1 is charged with the electric charge stored in the capacitor C1.
  • the gate voltage rises.
  • the gate drive circuit 11 When the gate voltage reaches the drive voltage Von and enters a steady state at the subsequent time t23, the gate drive circuit 11 turns off the switching element F1a. Further, at the subsequent time t24, the gate drive circuit 11 turns on the switching element F1. As a result, the capacitor C1 can be charged with the power output from the voltage source B1 while maintaining the gate voltage at the drive voltage Von output from the voltage source B1a for stabilization.
  • the switching element F1a by adding the switching element F1a, it is possible to delay the timing of turning on the switching element F1a when the switching device 1 is turned on after the switching element E1 is turned on, and to set the timing at which the driver output voltage becomes the maximum value. It is possible to delay. As a result, it is possible to increase the driver output voltage in the vicinity where the gate voltage becomes the gate threshold voltage Vth.
  • the charging timing of the capacitor C1 can be accelerated, and the discharging timing of the capacitor C1 can be changed to an appropriate timing.
  • FIG. 10 shows an example in which the switching element F1a for disconnection is added to the drive device 600 shown in FIG. 8, the switching element F1a for disconnection is added to the other drive devices 100 to 500, 601. It is also possible.
  • Embodiment 8 The drive devices 100 to 700 according to the above-described embodiments 1 to 7 perform a switching operation regardless of the state of the switching device 1 (temperature, switching current, voltage between terminals, etc.).
  • a circuit for feeding back the state of the switching device 1 to each voltage value, capacitance value, and resistance value in the drive circuit is added.
  • FIG. 12 is a diagram showing an example of the circuit configuration of the drive device 800 according to the eighth embodiment.
  • the drive device 800 shown in FIG. 12 is obtained by adding a control unit 12 to the drive device 600 shown in FIG. 8 described above.
  • the switching device 1 is provided with a voltage detection unit 13 for detecting the voltage of the switching device 1, a current detection unit 14 for detecting the current of the switching device 1, and a temperature detection unit 15 for detecting the temperature of the switching device 1.
  • the voltages of the voltage sources B1 and B1a in the drive device 800, the capacitance of the capacitor C1, and the values of the resistors R1 and R3 are variably configured.
  • the control unit 12 receives the detection results of the external voltage detection unit 13, the current detection unit 14, and the temperature detection unit 15 as information indicating the state of the switching device 1, and based on the received detection results, the voltage source in the drive device 800.
  • the voltage of B1 and B1a, the capacitance of the capacitor C1, and the values of the resistors R1 and R3 are changed. This makes it possible to adjust the driving conditions during the switching operation according to the operating state of the switching device 1.
  • 1 Switching device 2 Gate resistor, 5, 20, 40, B1, B1a, B2 Voltage source, 11 Gate drive circuit, 12 Control unit, 13 Voltage detection unit, 14 Current detection unit, 15 Temperature detection unit, 21,21a, 21b, 21c, 41 output device, 22, 23, 42, 43, Tn, Tp output terminal, 100, 200, 300, 400, 500, 600, 601, 700, 800 drive device, C1, C2 capacitor, D1 diode, E1, E2, F1, F1a, F2 switching element, R1 gate resistor, R2 pull-down resistor, R3 adjustment resistor, R4, R5 resistor, R6, R7 voltage dividing resistor.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

La présente invention concerne un appareil (100) pour commander un dispositif de commutation (1) comprenant un élément de commutation (E1) et une unité de sortie (21). L'unité de sortie (21) comprend : une paire de bornes de sortie (22, 23) reliée au dispositif de commutation (1) par l'intermédiaire de l'élément de commutation (E1) ; un condensateur (C1) connecté entre la paire de bornes de sortie (22, 23) ; un élément de commutation (F1) ; et une source de tension (B1) connectée au condensateur (C1) par l'intermédiaire de l'élément de commutation (F1) pour délivrer une tension qui est supérieure en valeur absolue à une tension pour entraîner le dispositif de commutation (1). L'élément de commutation (E1) est à l'état bloqué lorsque le dispositif de commutation (1) est à l'état bloqué, tandis que l'élément de commutation (E1) est allumé lorsque le dispositif de commutation (1) est allumé. L'élément de commutation (F1) est à l'état bloqué lorsque le dispositif de commutation (1) est à l'état bloqué, tandis que l'élément de commutation (F1) est éteint lorsque le dispositif de commutation (1) est allumé.
PCT/JP2019/025030 2019-06-25 2019-06-25 Appareil pour un dispositif de commutation d'entraînement WO2020261353A1 (fr)

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JP2021528675A JP7086291B2 (ja) 2019-06-25 2019-06-25 スイッチングデバイスの駆動装置
PCT/JP2019/025030 WO2020261353A1 (fr) 2019-06-25 2019-06-25 Appareil pour un dispositif de commutation d'entraînement

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0221931U (fr) * 1988-07-29 1990-02-14
JPH05259861A (ja) * 1992-03-11 1993-10-08 Toyota Autom Loom Works Ltd 電流駆動型半導体スイッチの駆動回路
JPH05335911A (ja) * 1992-05-28 1993-12-17 Hitachi Ltd ドライブ回路
JP2007174134A (ja) * 2005-12-21 2007-07-05 Toyo Electric Mfg Co Ltd 高速ゲート駆動回路
JP2018121386A (ja) * 2017-01-23 2018-08-02 株式会社デンソー 駆動装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0221931U (fr) * 1988-07-29 1990-02-14
JPH05259861A (ja) * 1992-03-11 1993-10-08 Toyota Autom Loom Works Ltd 電流駆動型半導体スイッチの駆動回路
JPH05335911A (ja) * 1992-05-28 1993-12-17 Hitachi Ltd ドライブ回路
JP2007174134A (ja) * 2005-12-21 2007-07-05 Toyo Electric Mfg Co Ltd 高速ゲート駆動回路
JP2018121386A (ja) * 2017-01-23 2018-08-02 株式会社デンソー 駆動装置

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