WO2020253259A1 - 显示装置、显示面板及其制备方法 - Google Patents

显示装置、显示面板及其制备方法 Download PDF

Info

Publication number
WO2020253259A1
WO2020253259A1 PCT/CN2020/076524 CN2020076524W WO2020253259A1 WO 2020253259 A1 WO2020253259 A1 WO 2020253259A1 CN 2020076524 W CN2020076524 W CN 2020076524W WO 2020253259 A1 WO2020253259 A1 WO 2020253259A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive block
emitting device
array substrate
light emitting
display panel
Prior art date
Application number
PCT/CN2020/076524
Other languages
English (en)
French (fr)
Inventor
夏继业
Original Assignee
成都辰显光电有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 成都辰显光电有限公司 filed Critical 成都辰显光电有限公司
Priority to KR1020217039278A priority Critical patent/KR102604712B1/ko
Publication of WO2020253259A1 publication Critical patent/WO2020253259A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • This application relates to the field of display technology, and in particular to a display device, a display panel and a manufacturing method thereof.
  • micro light emitting diodes are gradually applied to various display devices with their higher brightness and longer service life.
  • the display panel usually includes an array substrate and a light-emitting device composed of micro-light-emitting diodes.
  • a light-emitting device composed of micro-light-emitting diodes.
  • the micro-light-emitting diodes are first prepared on the base, and then the micro-light-emitting diodes on the base are connected to the array substrate, and the base and the micro-light-emitting diodes are separated. In this process, the micro-light-emitting diode is prone to uneven force, which may cause damage to the micro-light-emitting diode.
  • the embodiments of the present application provide a display device, a display panel, and a manufacturing method thereof, to solve the technical problem that the micro-light-emitting diode is prone to uneven force during the manufacturing process, which causes the micro-light-emitting diode to be damaged.
  • the embodiment of the application provides a display panel, including: a light-emitting device, an array substrate, and a connecting glue; the array substrate and the light-emitting device are electrically connected by a first conductive block and a second conductive block, the first The conductive block and the second conductive block are not in contact; the connecting glue is arranged between the light-emitting device and the array substrate, and the projection of the connecting glue on the array substrate is located in the direction of the light-emitting device In the projection of the bottom wall of the array substrate on the array substrate, the connecting glue is located around the first conductive block and the second conductive block; the connecting glue is used to bond the light emitting device and the ⁇ array substrate.
  • An embodiment of the present application further provides a display device, including a housing and the display panel as described above, and the display panel is disposed on the housing.
  • the embodiment of the present application also provides a method for manufacturing a display panel, including:
  • connection layer Connecting the light emitting device to the base through a connection layer, and the light emitting device is connected to the connection layer on the top wall away from the array substrate;
  • the light emitting device is attached to the connecting glue through the substrate, and the first conductive block and the second conductive block are electrically connected to the light emitting device, and the connecting glue adheres to the light emitting device.
  • connection layer is decomposed, so that the substrate is separated from the light emitting device, and the manufacturing of the display panel is realized.
  • the array substrate and the light emitting device are electrically connected through the first conductive block and the second conductive block, the connecting glue is arranged between the light emitting device and the array substrate, and the connecting glue
  • the projection on the array substrate is located in the projection of the bottom wall of the light-emitting device on the array substrate, and the connecting glue is located around the first conductive block and the second conductive block; when the display panel is made, it is located between the light-emitting device and the array substrate.
  • the connecting glue will support the light-emitting device to avoid damage to the light-emitting device due to uneven force.
  • FIG. 1 is the first schematic diagram of the connection between the light emitting device and the array substrate in the display panel provided by the embodiment of the application;
  • FIG. 2 is a top view of the first conductive block, the second conductive block and the connecting glue on the array substrate in the display panel provided by the embodiment of the application;
  • 3 is a second schematic diagram of the connection between the light emitting device and the array substrate in the display panel provided by the embodiment of the application.
  • the display panel usually includes an array substrate and a light emitting device composed of micro light emitting diodes.
  • the array substrate is provided with a first metal pillar and a second metal pillar.
  • the first metal pillar and the second metal pillar are not in contact with each other, and the light emitting device is provided with a first metal pillar.
  • the electrode and the second electrode, the first electrode and the second electrode are not in contact, the first metal pillar and the first electrode are connected by welding, and the second metal pillar is also connected with the second electrode by welding to realize the array substrate
  • the mechanical connection between the light-emitting device and the array substrate is realized.
  • the connecting layer when the connecting layer is decomposed, the generated gas pushes the micro-light-emitting diode to separate from the substrate, and the cross-sectional area of the first metal pillar and the second metal pillar is small. At this time, the micro-light-emitting diode is prone to uneven forces, which may damage the micro-light-emitting diode .
  • FIG. 1 is a schematic diagram 1 of the connection between the light-emitting device and the array substrate in the display panel provided by the embodiment of the application
  • FIG. 2 is the first conductive block, the second conductive block and the connecting glue in the array provided by the embodiment of the application.
  • the top view on the substrate
  • FIG. 3 is a second schematic diagram of the connection between the light emitting device and the array substrate in the display panel provided by the embodiment of the application.
  • a display panel includes: a light emitting device 10, an array substrate 20, and a connecting glue 30; the array substrate 20 and the light emitting device 10 pass through a first conductive block 201 and a second The two conductive blocks 202 are electrically connected, where the first conductive block 201 and the second conductive block 202 are not in contact; the connecting glue 30 is arranged between the light emitting device 10 and the array substrate 20, and the projection of the connecting glue 30 on the array substrate 20 is located In the projection of the device 10 facing the bottom wall of the array substrate 20 on the array substrate 20, the connecting glue 30 is located around the first conductive block 201 and the second conductive block 202; the connecting glue 30 is used to bond the light emitting device 10 and the array substrate 20 .
  • the light-emitting device 10 may be an organic light-emitting device 10 or an inorganic light-emitting device 10. This embodiment does not limit the light-emitting device 10, as long as the light-emitting device 10 can emit light when power is supplied to the light-emitting device 10.
  • the light emitting device 10 may include an insulating layer 106, and a first electrode layer 101, a light emitting layer 102, and a second electrode layer 103 that are stacked; the insulating layer 106 is wrapped around the first electrode layer 101 and emits light. The outer side of the layer 102 and the second electrode layer 103, when the first electrode layer 101 and the second electrode layer 103 are charged, the light emitting layer 102 can be driven to emit light.
  • the array substrate 20 and the light emitting device 10 are electrically connected through a first conductive block 201 and a second conductive block 202.
  • a thin film transistor is provided in the array substrate 20, and the thin film transistor is electrically connected to the first conductive block 201 and the second conductive block 202.
  • the first conductive block 201 and the second conductive block 202 are electrically connected to the light emitting device 10 to control the first conductive block 201 and the second conductive block 202 to supply power to the light emitting device 10 through a thin film transistor, so as to realize the display of the display panel.
  • the first conductive block 201 is electrically connected to the first electrode layer 101 on the light emitting device 10
  • the second conductive block 202 is electrically connected to the second electrode layer 103 on the light emitting device 10 so as to pass through the first conductive block 201 and The second conductive block 202 supplies power to the light emitting device 10.
  • the first conductive block 201 and the second conductive block 202 can be arranged on the array substrate 20, and the first conductive block 201 and the second conductive block 202 can also be arranged on the light emitting device 10, as long as the array substrate 20 can pass through the first conductive block.
  • the block 201 and the second conductive block 202 only need to supply power to the light emitting device 10.
  • the connecting glue 30 is arranged between the light emitting device 10 and the array substrate 20, and the projection of the connecting glue 30 on the array substrate 20 is located in the projection of the bottom wall of the light emitting device 10 on the array substrate 20, and the connecting glue 30 is located on the first conductive block 201 and around the second conductive block 202.
  • the top end of the first conductive block 201 is in contact with the bottom wall of the light emitting device 10 facing the array substrate 20, and the bottom end of the first conductive block 201 is in contact with the top surface of the array substrate 20; the same, The top end of the second conductive block 202 is in contact with the bottom wall of the light emitting device 10 facing the array substrate 20, and the bottom end of the second conductive block 202 is in contact with the top surface of the array substrate 20.
  • the connecting glue 30 is located around the first conductive block 201 and the second conductive block 202.
  • the connecting glue 30 may surround the first conductive block 201 and the second conductive block 202 and be in contact with the first conductive block 201 and the second conductive block 202.
  • the contact may also surround the first conductive block 201 and the second conductive block 202 but not contact the first conductive block 201 and the second conductive block 202.
  • the connecting glue 30 adheres the light emitting device 10 to the array substrate 20, which also improves the connection force between the light emitting device 10 and the array substrate 20, and prevents the light emitting device 10 from being separated from the array substrate 20.
  • the connecting glue 30 surrounds the first conductive block 201 and the second conductive block 202 and is in contact with the first conductive block 201 and the second conductive block 202, that is, the connecting glue 30 fills the entire glue-containing area, and the connecting glue 30 and the second conductive block Compared with the gap between the first conductive block 201 and the second conductive block 202, the contact area between the connecting glue 30 and the light emitting device 10 is increased, and the light emitting device 10 is further supported, and the light emitting device 10 and the array substrate 20 are further improved. The connection force therebetween further prevents the light emitting device 10 from being separated from the array substrate 20.
  • the connecting glue 30 can be of various types, as long as it can bond the light emitting device 10 and the array substrate 20.
  • the connecting glue 30 may be a thermoplastic glue, such as acrylate or polystyrene.
  • the viscosity of the thermoplastic adhesive gradually decreases as the temperature increases, and gradually solidifies as the temperature decreases, and the above process can be repeated;
  • the connecting adhesive 30 is a thermoplastic adhesive, and the viscosity of the connecting adhesive 30 can be adjusted by changing the temperature, which is convenient
  • the connecting glue 30 in this embodiment may also be a thermosetting glue.
  • the thermosetting glue is gradually cured as the temperature rises, and the cured viscosity will not change with the change of temperature.
  • the connecting glue 30 is a thermoplastic glue
  • a whole layer of connecting glue 30 can be formed on the bottom surface of the array substrate 20, and then a photosensitive layer is formed on the connecting glue 30; then a mask is placed on the photosensitive layer, The mask has a shading part, and the projection of the shading part on the array substrate 20 is the same as the projection of the bottom wall of the light-emitting device 10 on the array substrate; then the mask is exposed to expose the photosensitive layer outside the shading part
  • the photosensitive layer corresponding to the shading part is not exposed but remains, and the connecting glue 30 corresponding to the corresponding shading part is also stored on the array substrate 20, and then Remove the photosensitive layer; at this time, a glue block composed of a connecting glue 30 is formed on the array substrate 20, and the projection of the glue block on the array substrate 20 is completely coincident with the projection of the bottom wall of the light emitting device 10 on the array substrate 20.
  • the first conductive block 201 and the second conductive block 202 can be pre-installed on the light-emitting device 10.
  • the light-emitting device 10 is attached to the glue block, and the glue block is heated to reduce the viscosity of the glue block. Press the light-emitting device 10 so that the first conductive block 201 and the second conductive block 202 pass through the glue block and contact the array substrate 20.
  • the connecting glue 30 is located around the first conductive block 201 and the second conductive block 202.
  • the first conductive block 201 and the second conductive block 202 can also be prefabricated on the top surface of the array substrate 20, and then a whole layer of connecting glue 30 is formed on the top surface of the array substrate 20.
  • the connecting glue 30 Surround the first conductive block 201 and the second conductive block 202, and then form a glue block by the same method, attach the light emitting device 10 to the glue block, and heat the glue block to reduce the viscosity of the glue block; at the same time press the light emitting device 10, so that the light-emitting device 10 is in contact with the first conductive block 201 and the second conductive block 202 to achieve electrical connection between the light-emitting device 10 between the first conductive block 201 and the second conductive block 202.
  • the connecting glue 30 is a thermoplastic glue
  • the connecting glue 30 can also be directly formed on the bottom wall of the light emitting device 10.
  • the first conductive block 201 and the second conductive block can be formed on the array substrate 20 in advance. 202. Then attach the light emitting device 10 to the array substrate 20, heat the connecting glue 30 and press the light emitting device 10, so that the first conductive block 201 and the second conductive block 202 pass through the connecting glue 30 to contact the light emitting device 10, and then Cool to solidify.
  • the first conductive block 201 and the second conductive block 202 can also be fabricated on the bottom wall of the light emitting device 10 in advance.
  • the connecting glue 30 in this embodiment can also be photoresist.
  • the connecting glue 30 of a certain shape can be formed by a photolithography process, so that the connecting glue 30 on the array substrate 20 is located in the projection of the bottom wall of the light emitting device 10 on the array substrate 20, and the connecting glue 30 is located in the first conductive block 201 and The periphery of the second conductive block 202 simplifies the manufacturing difficulty.
  • an entire layer of connecting glue 30 may be formed on the top surface of the array substrate 20; then the connecting glue 30 is subjected to photolithography processing to form a glue block, and the projection of the glue block on the array substrate 20 is located on the bottom wall of the light emitting device 10 In the projection on the array substrate 20, the glue block has a first through hole and a second through hole. The projection of the first conductive block 201 on the array substrate 20 is located in the projection of the first through hole on the array substrate 20.
  • the projection of the two conductive blocks 202 on the array substrate 20 is located within the projection of the second through hole on the array substrate 20; then the light emitting device 10 with the first conductive block 201 and the second conductive block 202 is attached to the glue block, And make the first conductive block 201 penetrate into the first through hole, and the second conductive block 202 penetrate into the second through hole, so that the first conductive block 201 and the second conductive block 202 are electrically connected to the array substrate 20; That is, the connection between the light emitting device 10 and the array substrate 20 can be realized.
  • the photolithography process includes: covering a mask on the connecting glue 30, and the mask has a light shielding part.
  • the projection of the light shielding part on the array substrate 20 coincides with the projection of the bottom wall of the light emitting device 10 on the array substrate 20 and shields light
  • the part has a first light transmission hole and a second light transmission hole.
  • the first light transmission hole corresponds to the first conductive block 201
  • the second light transmission hole corresponds to the second conductive block 202.
  • the first conductive block 201 and the second conductive block 202 can also be pre-arranged on the array substrate 20, and a connecting glue 30 is formed on the top surface of the array substrate 20, and the connecting glue 30 covers the array outside the first conductive block 201 and the second conductive block 202 Substrate 20; then the connecting glue 30 is subjected to photolithography processing to form a glue block; then the light emitting device 10 is attached to the connecting glue 30, and the first conductive block 201 and the second conductive block 202 are electrically connected to the light emitting device 10, In order to complete the connection between the light emitting device 10 and the array substrate 20.
  • the connecting glue 30 in this embodiment can also be a photoresist with thermoplasticity.
  • the photoresist with thermoplastic properties can be mainly composed of polymethacrylate, polystyrene, or polycarbonate. That is, in addition to photoresist processing, the viscosity of the photoresist decreases after heating, and the photoresist gradually solidifies after cooling, and the viscosity of the photoresist will still decrease after being cured and heated again.
  • the photoresist can be heated appropriately to reduce the viscosity of the photoresist, so that the photoresist is completely attached to the array substrate 20 and the light-emitting device 10, and then cooled
  • the photoresist is used to cure the photoresist to realize the connection between the light emitting device 10 and the array substrate 20.
  • the connecting glue 30 is a thermoplastic photoresist, it is not necessary to form the first through hole and the second through hole during the photolithography process.
  • the processing process of the display panel provided in this embodiment is as follows: the light emitting device 10 is connected to the base through a connection layer, and the top wall of the light emitting device 10 away from the array substrate 20 is connected to the connection layer; a first conductive block 201 is formed on the array substrate 20 And the second conductive block 202, and the connecting glue 30 is formed; then the light emitting device 10 is attached to the connecting glue 30 through the substrate, and the first conductive block 201 and the second conductive block 202 are electrically connected to the light emitting device 10, and the connecting glue 30 Adhere the light-emitting device 10 and the array substrate 20; after that, the connection layer is decomposed by lighting, and then gas is generated, and the gas pushes the substrate to separate from the light-emitting device 10, thereby realizing the manufacture of the display panel.
  • the array substrate 20 and the light emitting device 10 are electrically connected through the first conductive block 201 and the second conductive block 202, the connecting glue 30 is arranged between the light emitting device 10 and the array substrate 20, and the connecting glue 30
  • the projection on the array substrate 20 is located in the projection of the bottom wall of the light emitting device 10 on the array substrate 20, and the connecting glue 30 is located around the first conductive block 201 and the second conductive block 202; when the display panel is made, the light emitting device is connected
  • the connection layer between 10 and the substrate is decomposed, and gas is generated to push the light-emitting device 10 to separate from the substrate.
  • the connection glue 30 between the light-emitting device 10 and the array substrate 20 will support the light-emitting device 10 and prevent the light-emitting device 10 from being stressed. Damage due to unevenness.
  • the connecting glue 30 adheres the light emitting device 10 and the array substrate 20, which also improves the connection force between the light emitting device 10 and the array substrate 20, and prevents the light emitting device 10 from being separated from the array substrate 20.
  • the projection of the connecting glue 30 on the array substrate 20 is located within the projection of the bottom wall of the light emitting device 10 on the array substrate 20. This arrangement can also prevent the connecting glue 30 from entering the gap between two adjacent light-emitting devices 10 when multiple light-emitting devices 10 are simultaneously mounted on the array substrate 20, causing the connecting glue 10 to contact the substrate; The light emitting device 10 is difficult to separate.
  • a first electrode 104 and a second electrode 105 are provided on the bottom wall of the light emitting device 10, and the first electrode 104 and the second electrode 105 are not in contact; the first electrode 104 and the first conductive block 201 is connected, and the second electrode 105 is connected to the second conductive block 202.
  • the first conductive block 201 is connected to the light emitting device 10 through the first electrode 104, and the second conductive block 202 is electrically connected to the light emitting device 10 through the second electrode 105.
  • the first electrode 104 and the second electrode 105 may both be made of metal materials such as silver and copper.
  • the first electrode 104 and the second electrode 105 may also be made of non-metallic materials such as graphite. As long as it is ensured that the first electrode 104 and the second electrode 105 are conductive.
  • the first conductive block 201 and the second conductive block 202 may be metal blocks mainly composed of metal materials such as silver and copper.
  • the first conductive block 201 and the second conductive block 202 may also be mainly Non-metallic block made of non-metallic materials such as graphite. As long as it is ensured that the first conductive block 201 and the second conductive block 202 are conductive.
  • the first electrode 104 and the second electrode 105 are also made of metal material. At this time, the first conductive block 201 and the first electrode 104 are welded, and the second conductive block 202 is welded to the second electrode 105.
  • the first conductive block 201 and the second conductive block 202 are connected to the light emitting device 10 by welding. On the basis of ensuring the electrical connection, the connection strength between the light emitting device 10 and the array substrate 20 is improved.
  • the first conductive block 201 and the first electrode 104 are connected by welding, and the second conductive block 202 and the second electrode 105 are connected by welding, the first conductive block 201 and the second conductive block 202 can be both connected.
  • Made of metal indium Since the melting point of indium is relatively low, it is possible to avoid damage to the light emitting device 10 or the array substrate 20 due to excessive temperature during soldering.
  • the connecting glue 30 is a photoresist with thermoplasticity
  • the connecting glue 30 is also heated while the first conductive block 201 and the second conductive block 202 are welded, and the connecting glue 30 and the array substrate are also realized when the welding is completed. Bonding between 20 and the light emitting device 10.
  • the light-emitting device 10 has a side wall adjacent to the bottom wall; the first electrode 104 includes a first contact portion 1041 on the bottom wall and a first extension portion on the side wall 1042.
  • the first conductive block 201 is connected to the first contact portion 1041 and the first extension portion 1042.
  • the first conductive block 201 is connected to the first contact portion 1041 and the first extension portion 1042.
  • the gap between the first conductive block 201 and the first electrode 104 is increased.
  • the contact area can avoid poor contact between the first conductive block 201 and the first electrode 104.
  • connection force between the first conductive block 201 and the first electrode 104 can also be improved, thereby improving the light emitting device 10 and the array substrate 20.
  • the second electrode 105 includes a second contact portion 1051 on the bottom wall and a second extension portion 1052 on the side wall, and the second conductive block 202 is connected to the second contact portion 1051 and the second extension portion 1052.
  • the second conductive block 202 is connected to the second contact portion 1051 and the second extension portion 1052.
  • the distance between the second conductive block 202 and the second electrode 105 is improved.
  • the contact area avoids poor contact between the second conductive block 202 and the second electrode 105.
  • connection force between the second conductive block 202 and the second electrode 105 can also be improved, thereby improving the light emitting device 10 and the array substrate 20.
  • the area of the bottom wall of the light emitting device 10 is smaller than the area of the top wall of the light emitting device 10.
  • the side walls of the light emitting device 10 are arranged obliquely. Compared with the vertical arrangement of the side walls of the light emitting device 10, the side wall area of the light emitting device 10 can be increased; the distance between the first extension 1042 and the bottom wall of the light emitting device 10 Under the same premise, the obliquely arranged side walls can increase the area of the first extension 1042 to further increase the contact area between the first conductive block 201 and the first electrode 104; similarly, the second extension 1052 and the light emitting device Under the premise that the distances between the bottom walls are equal, the inclined side walls can increase the area of the second extension portion 1052 to further increase the contact area between the second conductive block 202 and the second electrode 105.
  • the light-emitting device 10 may be in the shape of a truncated cone or a pyramid to ensure that the area of the bottom wall of the light-emitting device 10 is smaller than the area of the top wall of the light-emitting device 10.
  • a display device which includes a housing and the display panel described above with reference to FIGS. 1 to 3, and the display panel is disposed on the housing.
  • the display device can be a product or component with a display function such as a mobile phone, a tablet computer, a television, a display, an e-book, an e-paper, a smart watch, a notebook computer, a digital photo frame, or a navigator.
  • a display function such as a mobile phone, a tablet computer, a television, a display, an e-book, an e-paper, a smart watch, a notebook computer, a digital photo frame, or a navigator.
  • the array substrate 20 and the light emitting device 10 are electrically connected through the first conductive block 201 and the second conductive block 202, the connecting glue 30 is arranged between the light emitting device 10 and the array substrate 20, and the connecting glue 30
  • the projection on the array substrate 20 is located in the projection of the bottom wall of the light emitting device 10 on the array substrate 20, and the connecting glue 30 is located around the first conductive block 201 and the second conductive block 202; when the display panel is made, the light emitting device is connected
  • the connection layer between 10 and the substrate is decomposed, and gas is generated to push the light-emitting device 10 to separate from the substrate.
  • the connection glue 30 between the light-emitting device 10 and the array substrate 20 will support the light-emitting device 10 and prevent the light-emitting device 10 from being stressed. Damage due to unevenness.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请提供一种显示装置、显示面板及其制备方法，该显示面板包括：发光器件、阵列基板以及连接胶；阵列基板与发光器件之间通过第一导电块和第二导电块电连接，第一导电块和第二导电块不接触；连接胶设置在发光器件和阵列基板之间，连接胶在阵列基板上的投影位于发光器件朝向阵列基板的底壁在阵列基板上的投影内，连接胶位于第一导电块和第二导电块的周围；连接胶用于粘接发光器件和阵列基板。在制作显示面板时，连接发光器件和基底之间的连接层分解，进而生成气体而推动发光器件与基底分离，此时位于发光器件和阵列基板之间的连接胶会支撑发光器件，避免发光器件受力不均而损坏。

Description

显示装置、显示面板及其制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种显示装置、显示面板及其制备方法。
背景技术
随着显示设备技术的逐渐发展，微发光二极管以其较高的亮度以及较长的使用寿命逐渐应用在各类显示装置上。
显示面板通常包括阵列基板以及由微发光二极管构成的发光器件，制备时，首先在基底上制备微发光二极管，然后将基底上的微发光二极管与阵列基板连接，再将基底与微发光二极管分离。在此过程中，微发光二极管容易受力不均，导致微发光二极管损坏。
发明内容
有鉴于此，本申请实施例提供一种显示装置、显示面板及其制备方法，以解决制备过程中微发光二极管容易受力不均，而导致微发光二极管损坏的技术问题。
本申请实施例提供了一种显示面板，包括：发光器件、阵列基板以及连接胶；所述阵列基板与所述发光器件之间通过第一导电块和第二导电块电连接，所述第一导电块和所述第二导电块不接触；所述连接胶设置在所述发光器件和所述阵列基板之间，所述连接胶在所述阵列基板上的投影位于所述发光器件朝向所述阵列基板的底壁在所述阵列基板上的投影内，所述连接胶位于所述第一导电块和所述第二导电块的周围；所述连接胶用于粘接所述发光器件和所述阵列基板。
本申请实施例还提供一种显示装置，包括壳体以及如上所述的显示面板，所述显示面板设置在所述壳体上。
本申请实施例还提供一种显示面板的制备方法，包括：
将发光器件通过连接层连接在基底上，并且所述发光器件背离阵列基板的顶壁与所述连接层连接；
在所述阵列基板上形成第一导电块和第二导电块，并且形成连接胶；
通过所述基底将所述发光器件贴附在所述连接胶上，并且使所述第一导电块和所述第二导电块与所述发光器件电连接，所述连接胶粘接所述发光器件和所述阵列基板；
使所述连接层发生分解，从而所述基底与所述发光器件分离，实现所述显示面板的制作。
本申请实施例提供的显示装置、显示面板及其制备方法，阵列基板与发光器件之间通过第一导电块和第二导电块电连接，连接胶设置在发光器件和阵列基板之间，连接胶在阵列基板上的投影位于发光器件的底壁在阵列基板上的投影内，连接胶位于第一导电块和第二导电块的周围；在制作显示面板时，位于发光器件和阵列基板之间的连接胶会支撑发光器件，避免发光器件受力不均而损坏。
附图说明
图1为本申请实施例提供的显示面板中发光器件与阵列基板之间的连接示意图一；
图2为本申请实施例提供的显示面板中第一导电块、第二导电块以及连接胶在阵列基板上的俯视图；
图3为本申请实施例提供的显示面板中发光器件与阵列基板之间的连接示意图二。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。
显示面板通常包括阵列基板以及由微发光二极管构成的发光器件，阵列基板上设置有第一金属柱和第二金属柱，第一金属柱和第二金属柱不接触，发光器件上设置有第一电极和第二电极，第一电极和第二电极不接触，第一金属柱与第一电极通过焊接的方式连接，第二金属柱也通过焊接的方式与第二电极连接，以在实现阵列基板与发光器件电连接的基础上，实现发光器件与阵列基板之间的机械连接。制备时，首先在基底上制备微发光二极管，然后将基底上的微发光二极管与阵列基板焊接，最后通过一定波长的激光照射基底，使基底和微发光二极管之间的连接层分解，生成气体，以此实现基底与微发光二极管之间的分离。
然而，在连接层分解时，产生的气体推动微发光二极管与基底分离，第一金属柱和第二金属柱的截面面积较小，此时微发光二极管容易受力不均，导致微发光二极管损坏。
图1为本申请实施例提供的显示面板中发光器件与阵列基板之间的连接示意图一；图2为本申请实施例提供的显示面板中第一导电块、第二导电块以及连接胶在阵列基板上的俯视图；图3为本申请实施例提供的显示面板中发光器件与阵列基板之间的连接示意图二。
请参照图1-图3，在一实施例中，一种显示面板，包括：发光器件10、阵列基板20以及连接胶30；阵列基板20与发光器件10之间通过第一导电块201和第二导电块202电连接，其中，第一导电块201和第二导电块202不接触；连接胶30设置在发光器件10和阵列基板20之间，连接胶30在阵列基板20上的投影位于发光器件10朝向阵列基板20的底壁在阵列基板20上的投影内，连接胶30位于第一导电块201和第二导电块202的周围；连接胶30用于粘接发光器件10和阵列基板20。
发光器件10可以为有机发光器件10或者无机发光器件10，本实施例对发光器件10不做限制，只要能够在向发光器件10供电时，发光器件10发光即可。继续参照图1，示例性的，发光器件10可以包括绝缘层106、以及层叠设置的第一电极层101、发光层102、第二电极层103；绝缘层106包裹在第一电极层101、发光层102以及第二电极层103的外侧，当第一电极层101 和第二电极层103带电时，即可驱动发光层102发光。
阵列基板20与发光器件10之间通过第一导电块201和第二导电块202电连接，阵列基板20内设置有薄膜晶体管，薄膜晶体管与第一导电块201和第二导电块202电连接，第一导电块201和第二导电块202与发光器件10电连接，以通过薄膜晶体管控制第一导电块201和第二导电块202向发光器件10供电，以实现显示面板的显示。
可选地，第一导电块201与发光器件10上的第一电极层101电连接，第二导电块202与发光器件10上的第二电极层103电连接，以通过第一导电块201和第二导电块202向发光器件10供电。
第一导电块201和第二导电块202可以设置在阵列基板20上，第一导电块201和的第二导电块202还可以设置在发光器件10上，只要保证阵列基板20能够通过第一导电块201和第二导电块202向发光器件10供电即可。
连接胶30设置在发光器件10和阵列基板20之间，并且连接胶30在阵列基板20上的投影位于发光器件10底壁在阵列基板20上的投影内，且连接胶30位于第一导电块201和第二导电块202的周围。参照图1所示方位，具体地，第一导电块201的顶端与发光器件10朝向阵列基板20的底壁接触，第一导电块201的底端与阵列基板20的顶面接触；相同的，第二导电块202的顶端与发光器件10朝向阵列基板20的底壁接触，第二导电块202的底端与阵列基板20的顶面接触。
连接胶30位于第一导电块201和第二导电块202的周围，具体地，连接胶30可以包围第一导电块201和第二导电块202并与第一导电块201和第二导电块202接触，也可以包围第一导电块201和第二导电块202但不与第一导电块201和第二导电块202接触。需要保证连接胶30的一个面与发光器件10贴合，连接胶30的另一面与阵列基板20贴合，以保证连接胶30可以支撑发光器件10。另外，连接胶30将发光器件10粘接在阵列基板20上，还提高了发光器件10与阵列基板20之间的连接力，避免了发光器件10与阵列基板20脱离。
可选地，连接胶30包围第一导电块201和第二导电块202并与第一导电 块201和第二导电块202接触，即连接胶30充满整个容胶区，与连接胶30与第一导电块201和第二导电块202之间具有间隙相比，提高了连接胶30与发光器件10之间的接触面积，进一步支撑发光器件10，另外也进一步提高了发光器件10与阵列基板20之间的连接力，进一步避免发光器件10与阵列基板20脱离。
连接胶30可以有多种，只要能够粘接发光器件10和阵列基板20即可。优选地，连接胶30可以为热塑性胶，如：丙烯酸酯或者聚苯乙烯等。热塑性胶随着温度的升高其粘度逐渐降低，随着温度的降低而逐渐固化，并且上述过程可以重复进行；连接胶30为热塑性胶可以通过改变温度来调节连接胶30的粘度，进而方便了阵列基板20与发光器件10之间的粘接。本实施例中的连接胶30还可以为热固性胶，热固性胶随着温度的升高逐渐固化，并且固化后的粘度不会再随温度的变化而改变。
当连接胶30为热塑性胶时，制作过程中，可以先在阵列基板20的底面上形成整层连接胶30，之后在连接胶30上形成感光层；之后在感光层上罩设掩膜版，掩膜版上具有遮光部，遮光部在阵列基板20上的投影与发光器件10底壁在阵列基板上的投影形状相同；之后对掩膜版进行曝光，以使遮光部外的感光层被曝光，之后去除被曝光的感光层以及被曝光的感光层对应的连接胶30，遮光部对应的感光层未被曝光而保留，相应的遮光部对应的连接胶30也保存在阵列基板20上，之后去除感光层；此时在阵列基板20上形成由连接胶30构成的胶块，胶块在阵列基板20上的投影与发光器件10底壁在阵列基板20上的投影的完全重合。第一导电块201和第二导电块202可以预先安装在发光器件10上，此时将发光器件10贴附在胶块上，对胶块进行加热，以使胶块的粘度降低，与此同时按压发光器件10，使第一导电块201和第二导电块202穿过胶块而与阵列基板20接触，与此同时，连接胶30位于第一导电块201和第二导电块202的周围，以实现第一导电块201和第二导电块202与阵列基板20之间的电连接；在此之后，对胶块进行降温，以使胶块固化，即可实现发光器件10与阵列基板20之间的粘接。在上述过程中，第一导电块201和第二导电块202还可以预先制作在阵列基板20的顶面上，之 后在阵列基板20的顶面上形成整层连接胶30，此时连接胶30环绕第一导电块201和第二导电块202，再通过同样的方法形成胶块，将发光器件10贴附在胶块上，并对胶块进行加热使胶块的粘度降低；同时按压发光器件10，以使发光器件10与第一导电块201和第二导电块202接触，实现第一导电块201和第二导电块202发光器件10之间的电连接。
当连接胶30为热塑性胶时，制作过程中，还可以将连接胶30直接形成在发光器件10的底壁上，此时可以预先在阵列基板20上形成第一导电块201和第二导电块202，之后将发光器件10贴附在阵列基板20上，对连接胶30加热并按压发光器件10，使第一导电块201和第二导电块202穿过连接胶30与发光器件10接触，之后冷却固化。第一导电块201和第二导电块202还可以预先制作在发光器件10的底壁上。
本实施例中的连接胶30还可以为光刻胶。可以通过光刻的工艺形成一定形状的连接胶30，以使阵列基板20上的连接胶30位于发光器件10底壁在阵列基板20上的投影内、且连接胶30位于第一导电块201和第二导电块202的周围，简化了制作难度。
示例性的，可以在阵列基板20的顶面上形成整层连接胶30；之后对连接胶30进行光刻处理，以形成胶块，胶块在阵列基板20上的投影位于发光器件10底壁在阵列基板20上的投影内，胶块上具有第一通孔和第二通孔，第一导电块201在阵列基板20上的投影位于第一通孔在阵列基板20上的投影内，第二导电块202在阵列基板20上的投影位于第二通孔在阵列基板20上的投影内；之后将带有第一导电块201和第二导电块202发光器件10贴附在胶块上，并且使第一导电块201穿设在第一通孔内，第二导电块202穿设在第二通孔内，以使第一导电块201和第二导电块202与阵列基板20电连接；即可实现发光器件10与阵列基板20之间的连接。其中光刻处理包括：在连接胶30上覆盖掩膜版，掩膜版上具有遮光部，遮光部在阵列基板20上的投影与发光器件10底壁在阵列基板20上的投影重合，并且遮光部上具有与第一透光孔和第二透光孔，第一透光孔与第一导电块201对应，第二透光孔与第二导电块202对应，对掩膜版进行曝光，之后去除被曝光的连接胶30，以 形成胶块以及胶块上的第一通孔和第二通孔。
第一导电块201和第二导电块202也可以预先设置在阵列基板20上，在阵列基板20顶面形成连接胶30，连接胶30覆盖第一导电块201和第二导电块202外的阵列基板20；之后对连接胶30进行光刻处理，以形成胶块；再将发光器件10贴附在连接胶30上，并且第一导电块201和第二导电块202与发光器件10电连接，以完成发光器件10与阵列基板20之间的连接。
进一步地，本实施例中的连接胶30还可以为具有热塑性的光刻胶。具有热塑性的光刻胶可以主要由聚甲基丙烯酸脂或聚苯乙烯或聚碳酸酯等构成。即光刻胶除了能够进行光刻处理外，在加热后光刻胶的粘度降低，冷却时光刻胶逐渐固化，并且固化后再次加热，光刻胶的粘度仍然会降低。此时在将发光器件10贴附在阵列基板20上时，适当加热光刻胶，可以使光刻胶粘度降低，以使光刻胶完全与阵列基板20和发光器件10贴合，之后冷却光刻胶以使光刻胶固化，实现发光器件10与阵列基板20之间的连接。值得说明的是，连接胶30为热塑性的光刻胶时，在光刻处理时，可不必形成第一通孔和第二通孔，在将阵列基板20和发光器件10贴合时，通过加热使光刻胶粘度降低，之后按压发光器件10，即可使发光器件10上的第一导电块201和第二导电块202穿过光学胶与阵列基板20接触。
本实施例提供的显示面板的加工过程为：发光器件10通过连接层连接在基底上，并且发光器件10背离阵列基板20的顶壁与连接层连接；在阵列基板20上形成第一导电块201和第二导电块202，并且形成连接胶30；之后通过基底将发光器件10贴附在连接胶30上，并且使第一导电块201和第二导电块202与发光器件10电连接，连接胶30粘接发光器件10和阵列基板20；在此之后，通过光照的方式使连接层发生分解，进而生成气体，气体推动基底与发光器件10分离，进而实现显示面板的制作。
本实施例提供的显示面板，阵列基板20与发光器件10之间通过第一导电块201和第二导电块202电连接，连接胶30设置在发光器件10和阵列基板20之间，连接胶30在阵列基板20上的投影位于发光器件10的底壁在阵列基板20上的投影内，连接胶30位于第一导电块201和第二导电块202的 周围；在制作显示面板时，连接发光器件10和基底之间的连接层分解，进而生成气体而推动发光器件10与基底分离，此时位于发光器件10和阵列基板20之间的连接胶30会支撑发光器件10，避免发光器件10受力不均而损坏。
另外，连接胶30粘接发光器件10和阵列基板20，还提高了发光器件10与阵列基板20之间的连接力，避免了发光器件10与阵列基板20脱离。
本实施例中连接胶30在阵列基板20上的投影位于发光器件10的底壁在阵列基板20上的投影内。如此设置，还可以避免多个发光器件10同时安装在阵列基板20上时，连接胶30进入到相邻两个发光器件10间的缝隙内，导致的连接胶10与基底接触；进而避免基底与发光器件10分离困难。
继续参照图1，本实施例中，发光器件10的底壁上设置有第一电极104和第二电极105，第一电极104和第二电极105不接触；第一电极104与第一导电块201连接，第二电极105与第二导电块202连接。第一导电块201通过第一电极104与发光器件10连接，第二导电块202通过第二电极105与发光器件10电连接。
本实施例中第一电极104和第二电极105可以均由银、铜等金属材质构成，本实施中第一电极104和第二电极105还可以均由石墨等非金属材质构成。只要保证第一电极104和第二电极105导电即可。
相同的，本实施中，第一导电块201和第二导电块202可以为主要由银、铜等金属材质构成的金属块，本实施中第一导电块201和第二导电块202还可以主要由石墨等非金属材质构成的非金属块。只要保证第一导电块201和第二导电块202导电即可。
当第一导电块201和第二导电块202为金属块时，第一电极104和第二电极105也由金属材质构成，此时第一导电块201与第一电极104焊接，第二导电块202与第二电极105焊接。第一导电块201和第二导电块202之间通过焊接的方式与发光器件10之间连接，在保证电连接的基础上，提高了发光器件10与阵列基板20之间的连接强度。
优选地，当第一导电块201与第一电极104通过焊接的方式连接，第二导电块202与第二电极105通过焊接的方式连接时，第一导电块201和第二 导电块202可以均由金属铟构成。由于铟的熔点较低，可以避免焊接时温度过高而对发光器件10或阵列基板20造成损伤。
连接胶30为具有热塑性的光刻胶时，在第一导电块201和第二导电块202焊接的同时，也对连接胶30进行了加热，在完成焊接的同时也实现连接胶30与阵列基板20和发光器件10之间的粘接。
继续参照图3，本实施例中，发光器件10上具有与底壁相邻的侧壁；第一电极104包括位于底壁上的第一接触部1041、以及位于侧壁上的第一延伸部1042，第一导电块201与第一接触部1041和第一延伸部1042连接。第一导电块201与第一接触部1041和第一延伸部1042连接，与第一电极104仅设置在发光器件10的底壁相比，提高了第一导电块201与第一电极104之间的接触面积，避免第一导电块201与第一电极104之间接触不良。另外，当第一导电块201与第一电极104之间通过焊接的方式连接时，也可以提高第一导电块201与第一电极104之间的连接力，进而提高发光器件10与阵列基板20之间的连接力。
进一步地，第二电极105包括位于底壁上的第二接触部1051、以及位于侧壁上的第二延伸部1052，第二导电块202与第二接触部1051和第二延伸部1052连接。第二导电块202与第二接触部1051和第二延伸部1052连接，与第二电极105仅设置发光器件10的底壁相比，提高了第二导电块202与第二电极105之间的接触面积，避免第二导电块202与第二电极105之间接触不良。另外，当第二导电块202与第二电极105之间通过焊接的方式连接时，也可以提高第二导电块202与第二电极105之间的连接力，进而提高发光器件10与阵列基板20之间的连接力。
优选地，发光器件10底壁的面积小于发光器件10顶壁的面积。如此设置，发光器件10的侧壁倾斜设置，与发光器件10的侧壁垂直设置相比，可以增大发光器件10的侧壁面积；在第一延伸部1042与发光器件10底壁之间距离相等的前提下，倾斜设置的侧壁可增大第一延伸部1042的面积，以进一步提高第一导电块201与第一电极104的接触面积；相同的，在第二延伸部1052与发光器件10底壁之间距离相等的前提下，倾斜设置的侧壁可增大第 二延伸部1052的面积，以进一步提高第二导电块202与第二电极105的接触面积。
示例性地，发光器件10可以呈圆台状或者棱台状，以保证发光器件10底壁的面积小于发光器件10顶壁的面积。
在其他实施例中，还提供一种显示装置，包括壳体以及如上参照图1-图3所述的显示面板，显示面板设置在壳体上。
显示装置可以为手机、平板电脑、电视机、显示器、电子书、电子纸、智能手表、笔记本电脑、数码相框或导航仪等具有显示功能的产品或部件。
本实施例提供的显示装置，阵列基板20与发光器件10之间通过第一导电块201和第二导电块202电连接，连接胶30设置在发光器件10和阵列基板20之间，连接胶30在阵列基板20上的投影位于发光器件10的底壁在阵列基板20上的投影内，连接胶30位于第一导电块201和第二导电块202的周围；在制作显示面板时，连接发光器件10和基底之间的连接层分解，进而生成气体而推动发光器件10与基底分离，此时位于发光器件10和阵列基板20之间的连接胶30会支撑发光器件10，避免发光器件10受力不均而损坏。
在本申请的描述中，指示方位或位置关系的术语为基于附图所示的方位或位置关系；术语“第一”、“第二”仅用于方便描述不同的部件。
以上各实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述各实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。

Claims (20)

  1. 一种显示面板，包括：
    发光器件；
    阵列基板；
    第一导电块和第二导电块，所述阵列基板与所述发光器件之间通过第一导电块和第二导电块电连接，所述第一导电块和所述第二导电块不接触；以及
    连接胶，所述连接胶设置在所述发光器件和所述阵列基板之间，所述连接胶在所述阵列基板上的投影位于所述发光器件朝向所述阵列基板的底壁在所述阵列基板上的投影内，所述连接胶位于所述第一导电块和所述第二导电块的周围；
    所述连接胶用于粘接所述发光器件和所述阵列基板。
  2. 根据权利要求1所述的显示面板，其中，所述连接胶与所述第一导电块和所述第二导电块贴合。
  3. 根据权利要求1所述的显示面板，其中，所述连接胶为热塑性胶或热固性胶。
  4. 根据权利要求1所述的显示面板，其中，所述连接胶为光刻胶。
  5. 根据权利要求1所述的显示面板，其中，所述连接胶包括聚甲基丙烯酸脂、聚苯乙烯或聚碳酸酯。
  6. 根据权利要求1-5中任一项所述的显示面板，其中，所述发光器件的所述底壁上设置有第一电极和第二电极，所述第一电极和所述第二电极不接触；所述第一电极与所述第一导电块连接，所述第二电极与所述第二导电块连接。
  7. 根据权利要求6所述的显示面板，其中，所述发光器件上具有与所述底壁相邻的侧壁；所述第一电极包括位于所述底壁上的第一接触部、以及位于所述侧壁上的第一延伸部，所述第一导电块与所述第一接触部和所述第一延伸部连接。
  8. 根据权利要求7所述的显示面板，其中，所述第二电极包括位于所述底壁上的第二接触部、以及位于所述侧壁上的第二延伸部，所述第二导电块与所述第二接触部和所述第二延伸部连接。
  9. 根据权利要求8所述的显示面板，其中，所述发光器件底壁的面积小于所述发光器件顶壁的面积。
  10. 根据权利要求6所述的显示面板，其中，所述第一导电块和所述第二导电块均为金属块。
  11. 根据权利要求10所述的显示面板，其中，所述第一导电块与所述第一电极焊接，所述第二导电块与所述第二电极焊接。
  12. 根据权利要求1所述的显示面板，其中，所述发光器件包括绝缘层、以及层叠设置的第一电极层、发光层、第二电极层；所述绝缘层包裹在所述第一电极层、所述发光层以及所述第二电极层的外侧。
  13. 根据权利要求1所述的显示面板，其中，所述阵列基板内设置有薄膜晶体管，所述薄膜晶体管与所述第一导电块和所述第二导电块电连接。
  14. 根据权利要求1所述的显示面板，其中，所述第一导电块和所述第二导电块设置在所述阵列基板或所述发光器件上。
  15. 根据权利要求1所述的显示面板，其中，所述连接胶与所述第一导电块和所述第二导电块接触或不接触。
  16. 根据权利要求1所述的显示面板，其中，所述连接胶的一个面与所述发光器件贴合，所述连接胶的另一面与所述阵列基板贴合。
  17. 一种制备显示面板的方法，包括：
    将发光器件通过连接层连接在基底上，并且所述发光器件背离阵列基板的顶壁与所述连接层连接；
    在所述阵列基板上形成第一导电块和第二导电块，并且形成连接胶；
    将所述发光器件贴附在所述连接胶上，并且使所述第一导电块和所述第二导电块与所述发光器件电连接，所述连接胶粘接所述发光器件和所述阵列基板；
    使所述连接层发生分解，从而所述基底与所述发光器件分离，实现所述 显示面板的制作。
  18. 根据权利要求17所述的方法，其中，所述连接胶为热塑性胶或热固性胶。
  19. 根据权利要求17所述的方法，其中，所述发光器件底壁的面积小于所述发光器件顶壁的面积。
  20. 一种显示装置，包括壳体以及权利要求1-16中任一项所述的显示面板，所述显示面板设置在所述壳体上。
PCT/CN2020/076524 2019-06-17 2020-02-25 显示装置、显示面板及其制备方法 WO2020253259A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217039278A KR102604712B1 (ko) 2019-06-17 2020-02-25 디스플레이 장치, 디스플레이 패널 및 그 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910521568.0 2019-06-17
CN201910521568.0A CN112185983B (zh) 2019-06-17 2019-06-17 显示面板及显示装置

Publications (1)

Publication Number Publication Date
WO2020253259A1 true WO2020253259A1 (zh) 2020-12-24

Family

ID=73914239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/076524 WO2020253259A1 (zh) 2019-06-17 2020-02-25 显示装置、显示面板及其制备方法

Country Status (3)

Country Link
KR (1) KR102604712B1 (zh)
CN (1) CN112185983B (zh)
WO (1) WO2020253259A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113724597B (zh) * 2021-08-31 2023-11-14 京东方科技集团股份有限公司 显示模组及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101626000A (zh) * 2008-07-10 2010-01-13 晶元光电股份有限公司 金属阵列基板、光电元件和发光元件及其制造方法
CN107731864A (zh) * 2017-11-20 2018-02-23 开发晶照明（厦门）有限公司 微发光二极管显示器和制作方法
CN109496351A (zh) * 2017-06-09 2019-03-19 歌尔股份有限公司 微发光二极管阵列转移方法、制造方法以及显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833111B2 (ja) * 1989-03-09 1998-12-09 日立化成工業株式会社 回路の接続方法及びそれに用いる接着剤フィルム
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
JP4337574B2 (ja) * 2003-09-25 2009-09-30 日亜化学工業株式会社 発光装置およびその形成方法
TWI301331B (en) * 2006-05-17 2008-09-21 Epistar Corp Light emitting device
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
CN102842666B (zh) * 2011-06-22 2015-03-18 赛恩倍吉科技顾问（深圳）有限公司 Led覆晶结构及其制造方法
US8796724B2 (en) * 2011-12-20 2014-08-05 Todd W Hodrinsky Light emitting systems and methods
KR102142715B1 (ko) * 2014-02-19 2020-08-07 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR102322335B1 (ko) * 2015-02-10 2021-11-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 웨이퍼 레벨 패키지
KR101637327B1 (ko) * 2015-05-15 2016-07-07 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제조 방법
CN105742469A (zh) * 2016-04-15 2016-07-06 深圳大道半导体有限公司 半导体发光芯片
CN107123718B (zh) * 2017-04-21 2019-03-26 中国科学院福建物质结构研究所 一种倒装大功率led封装结构及其制备方法和用途

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101626000A (zh) * 2008-07-10 2010-01-13 晶元光电股份有限公司 金属阵列基板、光电元件和发光元件及其制造方法
CN109496351A (zh) * 2017-06-09 2019-03-19 歌尔股份有限公司 微发光二极管阵列转移方法、制造方法以及显示装置
CN107731864A (zh) * 2017-11-20 2018-02-23 开发晶照明（厦门）有限公司 微发光二极管显示器和制作方法

Also Published As

Publication number Publication date
KR20210153732A (ko) 2021-12-17
CN112185983B (zh) 2023-03-24
CN112185983A (zh) 2021-01-05
KR102604712B1 (ko) 2023-11-22

Similar Documents

Publication Publication Date Title
US10768353B2 (en) Method of manufacturing light emitting module and light emitting module
US20210005588A1 (en) Micro led display module and method of manufacturing the same
JP5600443B2 (ja) 発光装置およびその製造方法
CN112017550B (zh) 显示面板及其制造方法、显示装置
US20210066538A1 (en) Display substrate, manufacturing method thereof, and display device
US10600941B2 (en) Electronic device and method for fabricating the same
TW202029531A (zh) 固晶結構及其製造方法
JP6912730B2 (ja) 発光モジュールの製造方法
CN1681377A (zh) 电子部件装配体的制造方法、电子部件装配体及电光装置
KR20200114811A (ko) 디스플레이 모듈 및 디스플레이 모듈의 제조 방법
WO2020038179A1 (zh) 电路板组件及其半成品、泛光灯、摄像模组及其应用
JP2016127253A (ja) 発光素子のパッケージ構造
WO2020253259A1 (zh) 显示装置、显示面板及其制备方法
JP5507315B2 (ja) 発光装置、バックライト光源およびその製造方法
CN1226668C (zh) 布线基板及其制造方法以及其应用
KR102586602B1 (ko) 디스플레이 패널, 그 제조 방법 및 디스플레이 장치
CN110010753A (zh) 半导体发光装置及其制造方法
JP2020021910A (ja) 発光モジュールの製造方法及び発光モジュール
CN114171664A (zh) 发光二极体显示器的制作方法
CN113054069A (zh) 发光装置的修补方法
TWI801756B (zh) 發光模組與由發光模組拼接而成的發光裝置
CN113228317B (zh) 发光二极管及其制造方法、发光二极管模组、显示设备
JP5643700B2 (ja) 配線基板の加工方法及びその製造方法、発光装置及びその製造方法、並びに電気機器
WO2023137714A1 (zh) 一种微型led芯片及其制备方法和包含其的共晶结构
CN203760002U (zh) 一种长方形的led显示单元模组

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20827900

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20217039278

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20827900

Country of ref document: EP

Kind code of ref document: A1