WO2020250587A1 - スパッタリングターゲット及びスパッタリングターゲットの製造方法 - Google Patents

スパッタリングターゲット及びスパッタリングターゲットの製造方法 Download PDF

Info

Publication number
WO2020250587A1
WO2020250587A1 PCT/JP2020/017914 JP2020017914W WO2020250587A1 WO 2020250587 A1 WO2020250587 A1 WO 2020250587A1 JP 2020017914 W JP2020017914 W JP 2020017914W WO 2020250587 A1 WO2020250587 A1 WO 2020250587A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
backing tube
central axis
recesses
sputtering target
Prior art date
Application number
PCT/JP2020/017914
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
優 和田
宏 追鳥
勝仁 齋藤
和美 田屋
高橋　一寿
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2020560509A priority Critical patent/JP6942939B2/ja
Priority to CN202080016679.7A priority patent/CN113490763B/zh
Priority to KR1020217027472A priority patent/KR102376281B1/ko
Publication of WO2020250587A1 publication Critical patent/WO2020250587A1/ja

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/604—Pressing at temperatures other than sintering temperatures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates

Definitions

  • the present invention relates to a sputtering target and a method for manufacturing the sputtering target.
  • a sputtering target when a sputtering target is composed of a plurality of target members, adjacent target members may come into contact with each other due to thermal expansion of the target members, and the target members may crack. In order to prevent cracking due to this contact, a gap may be provided between adjacent target members (see, for example, Patent Document 1).
  • an object of the present invention is to provide a sputtering target and a method for manufacturing the same, which more reliably suppresses the release of foreign matter from the gap formed between adjacent target members.
  • the sputtering target includes a backing tube, a target body, a bonding material, and a shielding member.
  • the backing tube has a tubular shape, and a plurality of recesses are formed on the outer peripheral surface, each of the plurality of recesses extends in the direction of the central axis, and each of the plurality of recesses is arranged side by side around the central axis.
  • the target body has a plurality of cylindrical target members surrounding the outer peripheral surface of the backing tube, and each of the plurality of target members is arranged side by side so as to be separated from each other in the central axis direction of the backing tube.
  • a gap formed between the adjacent target members by arranging the plurality of target members in the central axis direction circulates around the central axis of the backing tube, and the gap intersects each of the plurality of recesses.
  • the joining material is provided between the backing tube and the target body, and joins the backing tube and each of the plurality of target members.
  • the shielding member is arranged between the joining material and the target body so as to straddle each of the plurality of recesses, and shields the gap from the side of the joining material.
  • the gap formed between the adjacent target members is surely shielded by the shielding member, and the discharge of foreign matter from the gap is surely suppressed.
  • the shielding member may be composed of an annular elastic member.
  • the gap formed between the adjacent target members is surely shielded by the shielding member composed of the annular elastic member, and the discharge of foreign matter from the gap is surely suppressed.
  • the surface of the target member with which the shielding member abuts may be inclined with respect to the central axis direction.
  • a plurality of target bodies may be arranged side by side in a row in the central axis direction of the backing tube.
  • each of the plurality of target members may be composed of an oxide sintered body.
  • the oxide may have In, Ga, and Zn.
  • the sintered body has In, Ga, and Zn, a stable oxide semiconductor film is formed.
  • a plurality of recesses are formed on the outer peripheral surface, each of the plurality of recesses extends in the central axis direction, and the plurality of recesses extend.
  • a backing tube is prepared in which each of the above is arranged side by side around the central axis.
  • An annular shielding member is arranged around the backing tube so as to straddle each of the plurality of recesses.
  • the outer peripheral surface of the backing tube is surrounded by the first target member and the second target member.
  • the first target member and the second target member are arranged so as to be arranged in the central axis direction.
  • the gap formed between the first target member and the second target member is shielded from the backing tube side by the shielding member.
  • the molten joint material is filled between the first target member and the backing tube, and the joint material is filled between the second target member and the backing tube through the plurality of recesses.
  • the gap formed between the adjacent target members is surely shielded by the shielding member, and the release of foreign matter from the gap is surely suppressed.
  • a sputtering target and a method for manufacturing the same which more reliably suppresses the release of foreign matter from the gap formed between adjacent target members.
  • FIG. (A) is a schematic perspective view showing a sputtering target according to the present embodiment.
  • FIG. (B) is a schematic step view showing a sputtering target according to the present embodiment.
  • It is a schematic perspective view which shows the backing tube of the sputtering target which concerns on this embodiment, and the shielding member surrounding the backing tube.
  • It is a schematic cross-sectional view which shows the shielding member provided between a target body and a joint material.
  • It is a schematic cross-sectional view which shows the modification 2 of the sputtering target which concerns on this embodiment.
  • FIG. 1A is a schematic perspective view showing a sputtering target according to the present embodiment.
  • FIG. 1B is a schematic step view showing a sputtering target according to the present embodiment.
  • FIG. 1 (b) shows an XY-axis cross section along the A1-A2 line of FIG. 1 (a).
  • FIG. 2 is a schematic perspective view showing the backing tube of the sputtering target according to the present embodiment and the shielding member surrounding the backing tube.
  • FIG. 2 shows a state in which the bonding material 30 and the target main body 20 are removed from FIG. 1A.
  • the sputtering target 1 shown in FIGS. 1A and 1B is a cylindrical target assembly used for sputtering film formation.
  • the sputtering target 1 includes a backing tube 10, a target main body 20, a bonding material 30, and a shielding member 40.
  • the backing tube 10 is a tubular body, and the inside thereof is hollow.
  • the backing tube 10 extends in a uniaxial direction (for example, in the direction of the central axis 10c).
  • the direction of the central axis 10c is the longitudinal direction of the backing tube 10.
  • the central axis 10c is also the central axis of the sputtering target 1.
  • the backing tube 10 has an outer peripheral surface 101 that orbits around the central axis 10c, and an inner peripheral surface 102 that is located on the opposite side of the outer peripheral surface 101 and orbits around the central axis 10c.
  • the shape thereof is, for example, an annular shape.
  • a plurality of recesses 103 are formed on the outer peripheral surface 101 of the backing tube 10 (FIG. 2).
  • Each of the plurality of recesses 103 is, for example, a slit-shaped groove, each extending in the direction of the central axis 10c.
  • Each of the plurality of recesses is arranged side by side around the central axis 10c.
  • the number of recesses 103 is not particularly limited, and for example, eight recesses 103 are provided on the outer peripheral surface 101.
  • the material of the backing tube 10 has a material having excellent thermal conductivity, and is, for example, titanium (Ti), copper (Cu), or the like.
  • a flow path through which the refrigerant flows may be appropriately formed inside the backing tube 10.
  • the target body 20 surrounds the outer peripheral surface 101 of the backing tube 10.
  • the target body 20 is arranged concentrically with respect to the backing tube 10.
  • the target body 20 has a plurality of target members.
  • the target body 20 has a set of target members 20A and 20B.
  • the target member 20A is the first target member
  • the target member 20B is the second target member.
  • Each of the target members 20A and 20B has a cylindrical shape. Each of the target members 20A and 20B surrounds the backing tube 10. Further, the target members 20A and 20B are arranged side by side in the direction of the central axis 10c of the backing tube 10.
  • the shape is, for example, an annular shape.
  • the cross-sectional shapes of the target members 20A and 20B in the XY-axis plane have the same shape.
  • the lengths of the target members 20A and 20B in the Z-axis direction are the same.
  • the target members 20A and 20B are arranged side by side so as to be separated from each other in the direction of the central axis 10c of the backing tube 10 without contacting each other.
  • the target body 20 has a divided structure divided in the direction along the central axis 10c.
  • a gap (divided portion) 201 is formed between the target member 20A and the target member 20B.
  • the gap 201 orbits around the central axis 10c of the backing tube 10.
  • the gap 201 straddles each of the plurality of recesses 103 and intersects each of the plurality of recesses 103.
  • the width of the gap 201 in the direction of the central axis 10c is not particularly limited, and is set so as not to come into contact with each other due to thermal expansion of the target members 20A and 20B, for example.
  • the width of the gap 201 is 0.1 mm or more and 0.5 mm or less.
  • the target members 20A and 20B are made of the same material, for example, made of an oxide sintered body.
  • the sintered body has In and Zn.
  • the sintered body is made of In—Ga—Zn—O (IGZO).
  • the sintered body may be an In—Ti—Zn—Sn—O (ITZTO) sintered body, an In—Ti—Zn—Sn—O (IGTO) sintered body, or the like.
  • the joining material 30 is interposed between the backing tube 10 and the target body 20.
  • the joining material 30 is in close contact with the backing tube 10 and the target body 20.
  • the joining material 30 joins the backing tube 10 and each of the plurality of target members 20A and 20B.
  • the bonding material 30 is also injected into the recess 103.
  • the bonding material 30 includes, for example, indium (In), tin (Sn), a solder material, and the like.
  • the shielding member 40 is in contact with the outer peripheral surface 101 of the backing tube 10 other than the plurality of recesses 103, and is arranged between the joining material 30 and the target body 20 so as to straddle each of the plurality of recesses 103 (FIG. 2).
  • the shielding member 40 is located between the gap 201 and the joining member 30.
  • the shielding member 40 shields the gap 201 from the side of the joining member 30.
  • FIG. 3 is a schematic cross-sectional view showing a shielding member provided between the target body and the joining material.
  • FIG. 3 shows a shielding member 40 deviated from the position of the recess 103 around the central axis 10c.
  • the target member 20A and the target member 20B face each other with a gap 201 in the direction of the central axis 10c, so that the target member 20A has an end surface 202 facing the target member 20B, and the target member 20B is the target member 20A.
  • the target member 20A has an inclined surface 205 on the backing tube 10 side
  • the target member 20B has an inclined surface 206 on the backing tube 10 side.
  • the inclined surface 205 is connected to the end surface 202
  • the inclined surface 206 is connected to the end surface 203.
  • Each of the inclined surfaces 205 and 206 is inclined with respect to the direction of the central axis 10c.
  • the distance between the inclined surface 205 and the inclined surface 206 in the direction of the central axis 10c becomes narrower as the distance from the central axis 10c increases. Since the inclined surface 205 and the inclined surface 206 face each other in the direction of the central axis 10c, a tapered structure is formed on the backing tube 10 side of the gap 201.
  • the shielding member 40 is in contact with the inclined surface 205 of the target member 20A and is in contact with the inclined surface 206 of the target member 20B.
  • the cross-sectional diameter of the shielding member 40 is not particularly limited, and for example, the minimum diameter thereof may be such that it abuts on the inclined surface 205, the inclined surface 206, and the outer peripheral surface 101.
  • the shielding member 40 comes into contact with the inclined surface 205, the inclined surface 206, and the outer peripheral surface 101, and the shielding member 40 is slightly elastically deformed, so that a sufficient contact area of the shielding member 40 with respect to the target members 20A and 20B is secured. Will be done.
  • the outer shape of the cross section of the shielding member 40 before elastic deformation is, for example, circular.
  • the shielding member 40 is sandwiched between the inclined surface 205 and the inclined surface 206 in the direction of the central axis 10c. As a result, when the bonding material 30 is injected, the position shift of the shielding member 40 in the direction of the central axis 10c is less likely to occur.
  • the shielding member 40 is composed of an annular elastic member.
  • the shielding member 40 is, for example, an O-ring.
  • the material of the shielding member 40 has a material having excellent heat resistance and plasma resistance, and is, for example, a silicon-based resin, a fluororesin, or the like.
  • the shielding member 40 By arranging such a shielding member 40 between the gap 201 and the joining material 30, leakage of the joining material 30 into the gap 201 is suppressed, and the joining material 30 is less likely to enter the gap 201. Further, even if the gap 201 is exposed to plasma during sputtering, the bonding member 30 is shielded from the plasma by the shielding member 40. As a result, during sputtering, the component of the bonding material 30 (for example, In) is less likely to be mixed with the component of the target body 20. Further, since the shielding member 40 has plasma resistance, the shielding member 40 is also less likely to be mixed with the components of the target body 20.
  • the backing tube 10 shown in FIG. 2 is prepared, and the outer peripheral surface 101 of the backing tube 10 is surrounded by the target member 20A.
  • an annular shielding member 40 is arranged around the backing tube 10 so as to straddle each of the plurality of recesses 103.
  • the shielding member 40 is located near the center of each of the plurality of recesses 103, for example, in the direction of the central axis 10c.
  • a gap is formed by the recess 103 between the shielding member 40 and the backing tube 10.
  • the outer peripheral surface 101 of the backing tube 10 is surrounded by the target member 20B.
  • the outer peripheral surface 101 of the backing tube 10 is surrounded by the target member 20A and the target member 20B.
  • the target member 20A and the target member 20B are arranged so as to be aligned in the direction of the central axis 10c.
  • the shielding member 40 is sandwiched between the target member 20A and the target member 20B.
  • the gap 201 formed between the target member 20A and the target member 20B is shielded by the shielding member 40 from the backing tube 10 side.
  • the molten bonding material 30 is filled between the backing tube 10 and the target body 20 from below the backing tube 10.
  • filling, press-fitting, etc. using the pressure (gravity) difference are used.
  • 4 (a) and 4 (b) are schematic views showing how the bonding material is filled between the target body and the backing tube.
  • the bonding material 30 is injected between the target member 20A and the backing tube 10 in the target body 20. Even if the injection of the bonding material 30 is continued and the bonding material 30 reaches the position of the shielding member 40, the bonding material 30 leaks from the backing tube 10 side to the gap 201 because the gap 201 is shielded by the shielding member 40. It's getting harder.
  • the joining material 30 has the concave portion 103 between the shielding member 40 and the backing tube 10. Go through. As a result, the joining material 30 is also filled between the backing tube 10 and the target member 20B via the recess 103.
  • the joining material 30 is solidified, the backing tube 10 and the target member 20A are joined by the joining material 30, and the backing tube 10 and the target member 20B are joined by the joining material 30.
  • the target body 20 is formed around the backing tube 10. After that, if necessary, a finishing process for adjusting the surface roughness of the target members 20A and 20B is performed.
  • the gap 201 between the target members 20A and 20B is shielded from the backing tube 10 side by the shielding member 40.
  • the shielding member 40 is made of a material that can be elastically deformed.
  • the gap 201 is reliably shielded from the backing tube 10 side by the shielding member 40.
  • the bonding material 30 is less likely to be inserted into the gap 201, and the components of the bonding material 30 and the backing tube 10 are less likely to be mixed into the coating film.
  • the backing tube 10 is not exposed to the gap 201, and components (foreign substances) other than the components of the target member are less likely to be released from the gap 201.
  • the shielding member 40 is exposed to plasma through the gap 201, since the shielding member 40 is made of a material having high plasma resistance, the components of the shielding member 40 are less likely to be mixed into the coating film.
  • the position of the shielding member 40 having a circular cross section is firmly fixed by the inclined surfaces 205 and 206. Therefore, if the shielding member 40 is used, the positional deviation in the direction of the central axis 10c at the time of injecting the bonding material is less likely to occur as compared with the adhesive tape.
  • the shielding member 40 does not have an adhesive layer, there is no sticking work and installation is easy. Further, even if the position is deviated by the attachment to the backing tube 10, the position is easily adjusted again because it is not attached to the backing tube 10.
  • a recess 103 is provided on the outer peripheral surface 101 of the backing tube 10. Therefore, even if the shielding member 40 is in close contact with the target body 20 and the target body 20, the joining material 30 spreads over the entire area between each of the plurality of target members and the backing tube 10 through the recess 103.
  • FIG. 5 is a schematic perspective view showing a modification 1 of the sputtering target according to the present embodiment.
  • a plurality of target bodies 20 are arranged side by side in a row in the direction of the central axis 10c of the backing tube 10.
  • Each of the plurality of target bodies 20 is arranged apart from each other in the direction of the central axis 10c.
  • the inclined surfaces 205 and 206 are not limited to a set of target members 20A and 20B, but are formed between adjacent target members.
  • the length of the sputtering target 2 having the plurality of target bodies 20 in the direction of the central axis 10c is 2000 mm or more.
  • the length of the sputtering target in the direction of the central axis 10c can be easily increased.
  • FIG. 6 is a schematic cross-sectional view showing a modification 2 of the sputtering target according to the present embodiment.
  • a shallow recess 104 orbiting around the central axis 10c may be provided on the outer peripheral surface 101 of the backing tube 10 with which the shielding member 40 abuts.
  • the depth of the recess 104 is shallower than the depth of the recess 103.
  • Ga 2 O 3 was weighed so that the molar ratio of oxides was 1: 2: 1.
  • These raw material powders were pulverized and mixed with a wet ball mill. A zirconia ball having a diameter of 5 mm was used as the crushing medium. The pulverized and mixed slurry was dried and granulated with a spray dryer to obtain granulated powder.
  • the granulated powder is filled in a polyurethane cylindrical rubber mold with a metal core rod installed inside, the granulated powder is sealed, and then CIP (Cold Isostatic Pressing) molding is performed at a pressure of 98 MPa to form a cylindrical shape.
  • CIP Cold Isostatic Pressing
  • the molded body was fired at a set temperature of 1500 ° C. for 10 hours to obtain a cylindrical fired body (corresponding to the target member 20A or the target member 20B).
  • the target member was machined so that the outer diameter was 155 mm, the inner diameter was 135 mm, and the length was 260 mm. Twelve recesses 103 having a width of 2 mm, a maximum depth of 2 mm, and a length of 20 mm were formed around the central axis 10c of a Ti backing tube 10 having an outer diameter of 133 mm, an inner diameter of 125 mm, and a length of 1600 mm.
  • the target member and the backing tube 10 were set in a heating device, and while heating to 180 ° C., the heated and melted In was exposed to the inner peripheral surface of the target member and the outer peripheral surface 101 of the backing tube 10.
  • an annular fluororesin O-ring having a cross-sectional diameter of 1.5 mm and a diameter of 133 mm was attached to the backing tube 10 and brought into close contact with the target member 20A. Further, the backing tube 10 was inserted into the second target member 20B, and the O-ring was inserted. By repeating this operation, a sputtering target having 6 target members and 5 O-rings was obtained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
PCT/JP2020/017914 2019-06-10 2020-04-27 スパッタリングターゲット及びスパッタリングターゲットの製造方法 WO2020250587A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020560509A JP6942939B2 (ja) 2019-06-10 2020-04-27 スパッタリングターゲット及びスパッタリングターゲットの製造方法
CN202080016679.7A CN113490763B (zh) 2019-06-10 2020-04-27 溅射靶及溅射靶的制造方法
KR1020217027472A KR102376281B1 (ko) 2019-06-10 2020-04-27 스퍼터링 타깃 및 스퍼터링 타깃의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-107933 2019-06-10
JP2019107933 2019-06-10

Publications (1)

Publication Number Publication Date
WO2020250587A1 true WO2020250587A1 (ja) 2020-12-17

Family

ID=73780931

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/017914 WO2020250587A1 (ja) 2019-06-10 2020-04-27 スパッタリングターゲット及びスパッタリングターゲットの製造方法

Country Status (5)

Country Link
JP (1) JP6942939B2 (zh)
KR (1) KR102376281B1 (zh)
CN (1) CN113490763B (zh)
TW (1) TWI760739B (zh)
WO (1) WO2020250587A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121028A1 (ja) * 2011-03-04 2012-09-13 シャープ株式会社 スパッタリングターゲット、その製造方法、および薄膜トランジスタの製造方法
JP2015168832A (ja) * 2014-03-05 2015-09-28 東ソー株式会社 円筒形スパッタリングターゲットとその製造方法
JP2018507961A (ja) * 2015-03-18 2018-03-22 ユミコア 回転スパッタリングターゲットを形成する方法
JP2018119173A (ja) * 2017-01-24 2018-08-02 住友金属鉱山株式会社 円筒形スパッタリングターゲット、バッキングチューブ、および円筒形スパッタリングターゲットの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10102493B4 (de) 2001-01-19 2007-07-12 W.C. Heraeus Gmbh Rohrförmiges Target und Verfahren zur Herstellung eines solchen Targets
JP2005232580A (ja) * 2004-02-23 2005-09-02 Toyoshima Seisakusho:Kk 分割スパッタリングターゲット
EP1813695B8 (en) * 2006-01-31 2011-09-28 Materion Advanced Materials Technologies and Services Inc. Tubular sputtering target with improved stiffness
JP5309978B2 (ja) * 2008-08-20 2013-10-09 東ソー株式会社 円筒形スパッタリングターゲットの製造方法
KR101227607B1 (ko) * 2010-11-08 2013-01-30 미쓰이 긴조꾸 고교 가부시키가이샤 분할 스퍼터링 타깃 및 그 제조 방법
US20120222956A1 (en) * 2011-03-03 2012-09-06 Applied Materials, Inc. Method and apparatus for forming a cylindrical target assembly
US20130140173A1 (en) * 2011-06-10 2013-06-06 Séverin Stéphane Gérard Tierce Rotary sputter target assembly
CN102677006A (zh) * 2012-05-18 2012-09-19 友达光电股份有限公司 一种透明非晶态氧化物半导体溅镀靶材
JP6110224B2 (ja) * 2013-06-24 2017-04-05 株式会社アルバック ターゲットアセンブリ及びその製造方法
CN105908137B (zh) * 2015-02-24 2020-12-15 Ｊｘ金属株式会社 溅射靶

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121028A1 (ja) * 2011-03-04 2012-09-13 シャープ株式会社 スパッタリングターゲット、その製造方法、および薄膜トランジスタの製造方法
JP2015168832A (ja) * 2014-03-05 2015-09-28 東ソー株式会社 円筒形スパッタリングターゲットとその製造方法
JP2018507961A (ja) * 2015-03-18 2018-03-22 ユミコア 回転スパッタリングターゲットを形成する方法
JP2018119173A (ja) * 2017-01-24 2018-08-02 住友金属鉱山株式会社 円筒形スパッタリングターゲット、バッキングチューブ、および円筒形スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
JPWO2020250587A1 (ja) 2021-09-13
JP6942939B2 (ja) 2021-09-29
TWI760739B (zh) 2022-04-11
KR102376281B1 (ko) 2022-03-17
CN113490763A (zh) 2021-10-08
TW202106907A (zh) 2021-02-16
CN113490763B (zh) 2022-07-19
KR20210118174A (ko) 2021-09-29

Similar Documents

Publication Publication Date Title
US7467741B2 (en) Method of forming a sputtering target assembly and assembly made therefrom
KR20080054414A (ko) 스퍼터링 타켓 조립체를 형성하는 관성 접합 방법 및그로부터 제조된 조립체
JP2008184640A (ja) 円筒形スパッタリングターゲット及びその製造方法
KR20200079555A (ko) 세라믹 받침대에서 사용하기 위한 이중 목적 비아
WO2020250587A1 (ja) スパッタリングターゲット及びスパッタリングターゲットの製造方法
WO2013125084A1 (ja) 光レセプタクル
JP2015168832A (ja) 円筒形スパッタリングターゲットとその製造方法
JP6110224B2 (ja) ターゲットアセンブリ及びその製造方法
JP6968300B2 (ja) スパッタリングターゲット及びスパッタリングターゲットの製造方法
JP2008028297A (ja) 静電チャック
JP3223183B2 (ja) 半導体ディスクのための保持装置の製造方法及び該方法によって製造される保持装置
CN113508187B (zh) 溅射靶及溅射靶的制造方法
US10679833B2 (en) Cylindrical sputtering target
JP2014229762A (ja) センサ装置の製造方法
JP2008218837A (ja) はんだ接合構造及び封止パッケージ
JP7315486B2 (ja) セラミック接合体およびその製造方法ならびに荷電粒子ビーム加速装置
JPS622771Y2 (zh)
KR20000035726A (ko) 로켓 트러스트 챔버 제조 방법
JP2019052344A (ja) 円筒形スパッタリングターゲットの製造方法及び円筒形スパッタリングターゲット
GB2484908A (en) Layered structures comprising controlled height structures

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2020560509

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20822803

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20217027472

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20822803

Country of ref document: EP

Kind code of ref document: A1