WO2020248449A1 - 掩膜构件 - Google Patents

掩膜构件 Download PDF

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Publication number
WO2020248449A1
WO2020248449A1 PCT/CN2019/111202 CN2019111202W WO2020248449A1 WO 2020248449 A1 WO2020248449 A1 WO 2020248449A1 CN 2019111202 W CN2019111202 W CN 2019111202W WO 2020248449 A1 WO2020248449 A1 WO 2020248449A1
Authority
WO
WIPO (PCT)
Prior art keywords
area
shielding area
mask
connection
mask member
Prior art date
Application number
PCT/CN2019/111202
Other languages
English (en)
French (fr)
Inventor
杜骁
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/619,993 priority Critical patent/US11309374B2/en
Publication of WO2020248449A1 publication Critical patent/WO2020248449A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • This application relates to the field of display technology, and in particular to a mask member.
  • the common electrode of the light-emitting layer of the OLED display panel will reduce the light transmittance and affect the use effect of the camera module under the screen.
  • the common electrode is arranged in the whole layer, and the light transmittance is affected in the shielded area of the electronic component.
  • the existing OLED display panel has the technical problem that the common electrode of the electronic element arrangement area affects the light transmittance, which needs to be improved.
  • the present application provides a mask member, which is used to solve the technical problem that the common electrode in the electronic element arrangement area of the existing OLED display panel affects the light transmittance.
  • a mask member which includes:
  • a first mask which includes a first shielding area, a first opening area located in the first shielding area, and an electronic component shielding area and connection shielding located in the first opening area
  • the connection shielding area connects the electronic component shielding area and the first shielding area, and the connection shielding is divided into a first connection shielding area on one side of the electronic component shielding area and a second connection shielding area on the other side. Vapor-depositing the common electrode to obtain the first area of the common electrode;
  • a second mask including a second shielding area, a second opening area located in the second shielding area, and the electronic component shielding area located in the second opening area
  • the second shielding area corresponds to the first opening area and the first shielding area, and is used for evaporating a common electrode to obtain a second area of the common electrode.
  • the first connection shielding area is connected to one side of the first opening area.
  • the shape of the first connection shielding area is I-shaped.
  • the first connection shielding area is connected to the long side of the first opening area.
  • the first connection shielding area is connected to the short side of the first opening area.
  • the first connection shielding area is connected to two sides of the first opening area.
  • the shape of the first connection shielding area is L-shaped.
  • the first connection shielding area is connected to three sides of the first opening area.
  • the shape of the first connection shielding area is T-shaped.
  • the first connection shielding area is connected to four sides of the first opening area.
  • the area of the second opening area is larger than the first connection shielding area.
  • the boundary of the first opening area of the first mask member is 50 to 500 um outside the display area of the panel.
  • the boundary of the second opening area of the second mask member is expanded by 50 to 500 um from the first connection shielding area.
  • the first connection shielding area is arranged to surround the electronic component shielding area.
  • the electronic component is a camera, and the shape of the shielding area of the electronic component is circular.
  • the electronic component is an under-screen call film set, and the shape of the shielding area of the electronic component is rectangular.
  • the boundary of the shielding area of the electronic component is expanded by 50 to 500 um compared to the boundary of the electronic component.
  • the thickness of the first mask plate is 0.02-0.2 mm.
  • the thickness of the second mask plate is 0.02-0.2 mm.
  • the thickness of the first mask is greater than that of the second mask.
  • the present application provides a mask member.
  • the mask member includes a first mask plate and a second mask plate.
  • the first mask plate includes a first shielding area and a first mask located in the first shielding area.
  • the first connection shielding area on one side and the second connection shielding area on the other side are used to evaporate the common electrode to obtain the first area of the common electrode.
  • the second mask plate includes a second shielding area located in the first area.
  • the second area of the common electrode is obtained by evaporating the common electrode; when the common electrode is evaporated, the first area of the common electrode is obtained by evaporation with the first mask, and the first area of the common electrode is connected to the shielding area and the electron
  • the element shielding area is not provided with a common electrode, and a second mask member is used to vaporize the second area of the common electrode.
  • the second area of the common electrode is provided with a common electrode in the connection shielding area, and the first area of the common electrode and the common electrode The second area of the two forms a common electrode, and the common electrode is not provided with a common electrode in the shielding area of the electronic element.
  • FIG. 1 is a schematic cross-sectional view of a mask member provided by an embodiment of the application
  • FIG. 2 is a first schematic top view of a first mask provided by an embodiment of the application
  • FIG. 3 is a schematic top view of a second mask provided by an embodiment of the application.
  • FIG. 4 is a second schematic top view of the first mask provided by an embodiment of the application.
  • FIG. 5 is a third schematic top view of the first mask provided by an embodiment of the application.
  • FIG. 6 is a fourth schematic top view of the first mask provided by an embodiment of the application.
  • FIG. 7 is a fifth schematic top view of the first mask provided by an embodiment of the application.
  • FIG. 8 is a sixth schematic top view of the first mask provided by an embodiment of the application.
  • Fig. 9 is a schematic cross-sectional view of an evaporation equipment provided by an embodiment of the application.
  • FIG. 10 is a flowchart of a mask manufacturing process provided by an embodiment of the application.
  • FIG. 11 is a flowchart of a common electrode evaporation method for a full-screen display panel provided by an embodiment of the application.
  • the embodiment of the present application can solve this problem.
  • the dashed frame is the electronic component shielding area.
  • the mask member 10 provided by the present application includes a first mask 101 and a second mask 102.
  • the first mask The board 101 includes a first shielding area 204, a first opening area 203 located in the first shielding area 204, and an electronic component shielding area 202 and a connection shielding area 201 located in the first opening area 203.
  • the connection The shielding area 201 connects the electronic component shielding area 202 and the first shielding area 204, and the connecting shielding area 201 is divided into a first connecting shielding area 2001 on one side of the electronic component shielding area 202 and a second connecting shielding area on the other side.
  • the second mask 102 includes a second shielding area 302, a second opening area 301 located in the second shielding area 302, and The electronic component shielding area 202 in the second opening area 301, the second shielding area 302 corresponds to the first opening area 203 and the first shielding area 204, and is used to evaporate a common electrode to obtain a common electrode The second area.
  • the mask member includes a first mask plate, a second mask plate, and the first mask plate includes a first shielding area, a first opening area located in the first shielding area, and The electronic component shielding area and the connection shielding area located in the first opening area, the connection shielding area connects the electronic component shielding area and the first shielding area, and the connection shielding area is the first side of the electronic component shielding area A connecting shielding area and a second connecting shielding area on the other side are used to evaporate the common electrode to obtain the first area of the common electrode.
  • the second mask plate includes a second shielding area located in the second shielding area The second opening area in the second opening area, and the electronic component shielding area located in the second opening area, the second shielding area corresponding to the first opening area and the first shielding area, and is used for common evaporation
  • the electrode obtains the second area of the common electrode; when the common electrode is vapor-deposited, the first mask is used to vaporize the first area of the common electrode, and the first area of the common electrode is connected to the shielded area and the electronic component shielded area.
  • a common electrode is set, and a second mask member is used to vaporize to obtain a second area of the common electrode.
  • the second area of the common electrode is provided with a common electrode in the connection shielding area, the first area of the common electrode and the second area of the common electrode They jointly constitute a common electrode, and the common electrode is not provided with a common electrode in the shielding area of the electronic element.
  • the first connection shielding area 201 is connected to one side of the first opening area 203, and the electronic component shielding area 202 is connected to the first connection area 203.
  • the projection of the shielding area 201 on the substrate is in contact, and the mask material of the electronic component shielding area 202 is connected to the first opening area 203 through the mask material of the first connection shielding area 201 to achieve a fixed effect.
  • the first connection shielding area 201 has an I-shape, and one side of the first connection shielding area 201 and the first opening area 203 connection.
  • the shape of the first connection shielding area 201 is I-shaped, and the long sides of the first connection shielding area 201 and the first opening area 203 connection.
  • the first connection shielding area 201 has an I-shaped shape, and the first connection shielding area 201 is connected to the short side of the first opening area 203.
  • the shape of the first connection shielding area 201 is I-shaped, and two of the first connection shielding area 201 and the first opening area 203 ⁇ Edge connection.
  • the shape of the first connection shielding area 201 is L-shaped.
  • the first connection shielding area 201 is L-shaped, and the first connection shielding area 201 is connected to the long side of the first opening area 203.
  • the first connection shielding area 201 is L-shaped, and the first connection shielding area 201 is connected to the short side of the first opening area 203.
  • the shape of the first connection shielding area 201 is L-shaped, and two of the first connection shielding area 201 and the first opening area 203 ⁇ Edge connection.
  • the first connection shielding area 201 is connected to three sides of the first opening area 203.
  • the shape of the first connection shielding area 201 is T-shaped.
  • the shape of the first connection shielding area 201 is T-shaped, and the distance between the first connection shielding area 201 and the first opening area 203 Two long sides are connected with one short side.
  • the first connection shielding area 201 is T-shaped, and two short sides and one of the first connection shielding area 201 and the first opening area 203 Long-side connection.
  • the first connection shielding area 201 is connected to the four sides of the first opening area 203.
  • the area of the second opening area 301 is larger than that of the first connection shielding area 201.
  • the second mask plate 102 is used to evaporate the first connection shielding area 201
  • the second The area of the opening area 301 is larger than that of the first connection shielding area 201, which can ensure that the common electrode of the first connection shielding area 201 is arranged on the entire surface.
  • the boundary of the first opening area 203 of the first mask member is 50 to 500 um outside the display area of the panel to ensure that the common electrode is evaporated on the entire surface of the display area of the panel.
  • the boundary of the second opening area 301 of the second mask member is expanded by 50 to 500 um compared to the first connection shielding area 201.
  • the first connection shielding area 201 is arranged to surround the electronic component shielding area 202.
  • the electronic component is a camera
  • the electronic component shielding area 202 is circular in shape.
  • the electronic component is an under-screen call film set, and the electronic component shielding area 202 is rectangular in shape.
  • the boundary of the electronic component shielding region 202 is expanded by 50 to 500 um compared to the boundary of the electronic component.
  • the thickness of the first mask plate 101 is 0.02 ⁇ 0.2 mm.
  • the thickness of the first mask plate 101 is 0.08 ⁇ 0.12 mm.
  • the thickness of the second mask plate 102 is 0.02-0.2 mm.
  • the thickness of the first mask plate 101 is 0.08 ⁇ 0.12 mm.
  • the thickness of the first mask 101 is greater than that of the second mask.
  • the thickness of the first mask 101 is smaller than that of the second mask.
  • the thickness of the first mask 101 is equal to that of the second mask.
  • the present application also provides an evaporation device.
  • the evaporation device includes a carrying platform, a mask member, and an evaporation unit.
  • the mask member includes a first mask plate and a second mask plate.
  • a mask plate includes a first shielding area, a first opening area located in the first shielding area, and an electronic component shielding area and a connection shielding area located in the first opening area, and the connection shielding area is connected to the The electronic component shielding area and the first shielding area are divided into a first connection shielding area on one side of the electronic component shielding area and a second connection shielding area on the other side.
  • the second mask plate includes a second The shielding area, the second opening area located in the second shielding area, and the electronic component shielding area located in the second opening area, the second shielding area corresponding to the first opening area and the The first sheltered area.
  • the evaporation equipment includes a first mask plate and a second mask plate.
  • the first mask plate includes a first shielding area, a first opening area located in the first shielding area, and The electronic component shielding area and the connection shielding area located in the first opening area, the connection shielding area connects the electronic component shielding area and the first shielding area, and the connection shielding area is the first side of the electronic component shielding area
  • the second mask plate includes a second shielding area, a second opening area located in the second shielding area, and a second opening area located in the second shielding area In the shielding area of the electronic component, the second shielding area corresponds to the first opening area and the first shielding area.
  • the first connection shielding area 201 is connected to one side of the first opening area 203, and the electronic component shielding area 202 is connected to the first connection shielding area.
  • the projection of the area 201 on the substrate is in contact, and the mask material of the electronic component shielding area 202 is connected to the first opening area 203 through the mask material of the first connection shielding area 201 to achieve a fixed effect.
  • the shape of the first connection shielding area 201 is I-shaped, and the first connection shielding area 201 is connected to one side of the first opening area 203 .
  • the first connection shielding area 201 has an I-shape, and the first connection shielding area 201 is connected to the long side of the first opening area 203 .
  • the first connection shielding area 201 has an I-shaped shape, and the first connection shielding area 201 is connected to the short side of the first opening area 203.
  • the first connection shielding area 201 has an I-shape, and two sides of the first connection shielding area 201 and the first opening area 203 connection.
  • the shape of the first connection shielding area 201 is L-shaped.
  • the first connection shielding area 201 is L-shaped, and the first connection shielding area 201 is connected to the long side of the first opening area 203.
  • the first connection shielding area 201 is L-shaped, and the first connection shielding area 201 is connected to the short side of the first opening area 203.
  • the first connection shielding area 201 is L-shaped, and two sides of the first connection shielding area 201 and the first opening area 203 connection.
  • the first connection shielding area 201 is connected to three sides of the first opening area 203.
  • the shape of the first connection shielding area 201 is T-shaped.
  • the shape of the first connection shielding area 201 is T-shaped, and two parts of the first connection shielding area 201 and the first opening area 203 One long side is connected to one short side.
  • the first connection shielding area 201 is T-shaped, and two short sides and one long side of the first connection shielding area 201 and the first opening area 203 ⁇ Edge connection.
  • the first connection shielding area 201 is connected to the four sides of the first opening area 203.
  • the area of the second opening area 301 is larger than that of the first connection shielding area 201.
  • the second mask 102 is used to evaporate the first connection shielding area 201
  • the second opening The area of the area 301 is larger than that of the first connection shielding area 201, which can ensure that the common electrode of the first connection shielding area 201 is arranged on the entire surface.
  • the boundary of the first opening area 203 of the first mask member is 50 to 500 um outside the display area of the panel to ensure that the common electrode is evaporated on the entire surface of the display area of the panel.
  • the boundary of the second opening area 301 of the second mask member is expanded by 50 to 500 um compared to the first connection shielding area 201.
  • the first connection shielding area 201 is arranged to surround the electronic component shielding area 202.
  • the electronic component in the evaporation equipment, is a camera, and the shape of the electronic component shielding area 202 is circular.
  • the electronic component in the evaporation equipment, is an under-screen call film group, and the electronic component shielding area 202 is rectangular in shape.
  • the boundary of the electronic component shielding area 202 is expanded by 50 to 500 um compared to the boundary of the electronic component.
  • the thickness of the first mask 101 is 0.02 ⁇ 0.2 mm.
  • the thickness of the first mask 101 is 0.08 ⁇ 0.12 mm.
  • the thickness of the second mask 102 is 0.02 ⁇ 0.2 mm.
  • the thickness of the first mask 101 is 0.08 ⁇ 0.12 mm.
  • the thickness of the first mask 101 is greater than that of the second mask.
  • the thickness of the first mask 101 is smaller than that of the second mask.
  • the thickness of the first mask 101 is equal to the thickness of the second mask.
  • this application also provides a mask manufacturing process, which includes the following steps:
  • Gluing Provide an optical polymer PC composite sheet, spin-coating an anti-reflection neutral adhesion layer on the surface of the optical polymer PC composite sheet, spin-coating a neutral U lithography on the anti-reflection neutral adhesion layer glue,
  • photolithography laser exposure of the preset area of the neutral UV photoresist through a photolithography direct write mask machine
  • the IV photoresist is mixed with neutral UV oil, photoresist and additives in a ratio of 4:5:1.
  • step S1 includes the following steps:
  • each layer of glue in the glue application process, it can be ensured that each layer of glue can be evenly covered, and then the final baking is used to make the layers tightly connected.
  • the present application also provides a common electrode evaporation method for a full-screen display panel, which is used for the production of a common electrode of a full-screen light-emitting component.
  • the specific operation and equipment of the method are as follows:
  • Step 1 Pass the first mask used for vapor deposition of the common electrode into the first common electrode vapor deposition chamber
  • Step 2 The substrate completes the vapor deposition process before the common electrode and is transferred into the first common electrode vapor deposition chamber.
  • Step 3 Adjust the alignment of the first mask 101 and the substrate and the offset substrate and complete the alignment through the charge-coupled element.
  • the first mask and the substrate are closely attached to each other in the cavity.
  • Step 4 The substrate completes the first common electrode evaporation process, and the common electrode is formed into a film through the first opening area 203 of the first mask 101. At this time, the common electrode film covers part of the display area of the panel, and the electronic element shielding area 202 Where there is no common electrode to form a film, and then transfer to the second common electrode evaporation chamber, or replace the first mask 101 with the second mask 102,
  • Step 5 Adjust the alignment of the second mask 102 and the substrate and the offset substrate and complete the alignment through the charge-coupled element.
  • the second mask and the substrate are closely attached to each other in the cavity.
  • Step 6 Adjust the alignment of the second mask 102 and the substrate and the alignment deviation of the substrate and complete the alignment through the charge-coupled element.
  • the metal mask and the substrate are closely attached to each other in the cavity.
  • Step 7 The substrate completes the first common electrode evaporation process, and the common electrode is formed through the second opening area 301 of the second mask 102. At this time, the common electrode film deposited through the second mask 102 and The existing common electrode film layers on the substrate are overlapped, connected to form a whole common electrode or a continuous common electrode network, and then transferred to the next process.
  • the present application provides a mask member.
  • the mask member includes a first mask plate and a second mask plate.
  • the first mask plate includes a first shielding area and a first mask located in the first shielding area.
  • the first connection shielding area on one side and the second connection shielding area on the other side are used to evaporate the common electrode to obtain the first area of the common electrode.
  • the second mask plate includes a second shielding area located in the first area.
  • the second area of the common electrode is obtained by evaporating the common electrode; when the common electrode is evaporated, the first area of the common electrode is obtained by evaporation with the first mask, and the first area of the common electrode is connected to the shielding area and the electron
  • the element shielding area is not provided with a common electrode, and a second mask member is used to vaporize the second area of the common electrode.
  • the second area of the common electrode is provided with a common electrode in the connection shielding area, and the first area of the common electrode and the common electrode The second area of the two forms a common electrode, and the common electrode is not provided with a common electrode in the shielding area of the electronic element.

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Abstract

一种掩膜构件（10），包括：第一掩膜板（101），第一掩膜板（101）包括第一遮蔽区（204）、位于第一遮蔽区（204）内的第一开口区（203）、以及位于第一开口区（203）内的电子元件遮蔽区（202）和连接遮蔽区（201），连接遮蔽区（201）连接电子元件遮蔽区（202）和第一遮蔽区（204），连接遮蔽区（201）分为电子元件遮蔽区（202）一侧的第一连接遮蔽区（2001）和另一侧的第二连接遮蔽区（2002），用于蒸镀公共电极得到公共电极的第一区域；第二掩膜板（102），第二掩膜板（102）包括第二遮蔽区（302）、位于第二遮蔽区（302）内的第二开口区（301）、以及位于第二开口区（301）内的电子元件遮蔽区（202），第二遮蔽区（302）对应于第一开口区（203）和第一遮蔽区（204），用于蒸镀公共电极得到公共电极的第二区域。

Description

掩膜构件 技术领域
本申请涉及显示技术领域，尤其涉及一种掩膜构件。
 背景技术
OLED显示面板发光层公共电极会导致光透过率降低，影响屏下摄像头模块的使用效果，公共电极整层设置，在电子元件遮蔽区影响透光率。
所以，现有OLED显示面板存在电子元件设置区的公共电极影响透光率的技术问题，需要改进。
 技术问题
本申请提供一种掩膜构件，用于解决现有OLED显示面板存在电子元件设置区的公共电极影响透光率的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种掩膜构件，其包括：
第一掩膜板，所述第一掩膜板包括第一遮蔽区、位于所述第一遮蔽区内的第一开口区、以及位于所述第一开口区内的电子元件遮蔽区和连接遮蔽区，所述连接遮蔽区连接所述电子元件遮蔽区和所述第一遮蔽区，连接遮蔽区分为电子元件遮蔽区一侧的第一连接遮蔽区和另一侧的第二连接遮蔽区，用于蒸镀公共电极得到公共电极的第一区域；
第二掩膜板，所述第二掩膜板包括第二遮蔽区、位于所述第二遮蔽区内的第二开口区、以及位于所述第二开口区内的所述电子元件遮蔽区，所述第二遮蔽区对应于所述第一开口区和所述第一遮蔽区，用于蒸镀公共电极得到公共电极的第二区域。
在本申请提供的掩膜构件中，所述第一连接遮蔽区与所述第一开口区的一条边连接。
在本申请提供的掩膜构件中，所述第一连接遮蔽区形状为I型。
在本申请提供的掩膜构件中，所述第一连接遮蔽区与所述第一开口区的长边连接。
在本申请提供的掩膜构件中，所述第一连接遮蔽区与所述第一开口区的短边连接。
在本申请提供的掩膜构件中，所述第一连接遮蔽区与所述第一开口区的两条边连接。
在本申请提供的掩膜构件中，所述第一连接遮蔽区形状为L型。
在本申请提供的掩膜构件中，所述第一连接遮蔽区与第一开口区的三条边连接。
在本申请提供的掩膜构件中，所述第一连接遮蔽区形状为T型。
在本申请提供的掩膜构件中，所述第一连接遮蔽区与第一开口区的四条边连接。
在本申请提供的掩膜构件中，所述第二开口区面积大于所述第一连接遮蔽区。
在本申请提供的掩膜构件中，所述第一掩膜构件的所述第一开口区边界为面板显示区外扩50至500um。
在本申请提供的掩膜构件中，所述第二掩膜构件的所述第二开口区边界较第一连接遮蔽区外扩50至500um。
在本申请提供的掩膜构件中，所述第一连接遮蔽区包围所述电子元件遮蔽区设置。
在本申请提供的掩膜构件中，所述电子元件为摄像头，所述电子元件遮蔽区形状为圆形。
在本申请提供的掩膜构件中，所述电子元件为屏下通话膜组，所述电子元件遮蔽区形状为矩形。
在本申请提供的掩膜构件中，所述电子元件遮蔽区边界比较电子元件边界外扩50至500um。
在本申请提供的掩膜构件中，所述第一掩膜板厚度为0.02~0.2 mm。
在本申请提供的掩膜构件中，所述第二掩膜板厚度为0.02~0.2 mm。
在本申请提供的掩膜构件中，所述第一掩膜板厚度大于所述第二掩模板。
 有益效果
本申请提供一种掩膜构件，该掩膜构件包括第一掩膜板、第二掩膜板，所述第一掩膜板包括第一遮蔽区、位于所述第一遮蔽区内的第一开口区、以及位于所述第一开口区内的电子元件遮蔽区和连接遮蔽区，所述连接遮蔽区连接所述电子元件遮蔽区和所述第一遮蔽区，连接遮蔽区分为电子元件遮蔽区一侧的第一连接遮蔽区和另一侧的第二连接遮蔽区，用于蒸镀公共电极得到公共电极的第一区域，所述第二掩膜板包括第二遮蔽区、位于所述第二遮蔽区内的第二开口区、以及位于所述第二开口区内的所述电子元件遮蔽区，所述第二遮蔽区对应于所述第一开口区和所述第一遮蔽区，用于蒸镀公共电极得到公共电极的第二区域；在蒸镀公共电极时，用第一掩膜板蒸镀得到公共电极的第一区域，所述公共电极的第一区域在连接遮蔽区和电子元件遮蔽区未设置公共电极，用第二掩膜构件蒸镀得到公共电极的第二区域，所述公共电极的第二区域在连接遮蔽区设置有公共电极，公共电极的第一区域和公共电极的第二区域共同构成公共电极，所述公共电极在电子元件遮蔽区未设置公共电极。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的掩膜构件的截面示意图；
图2为本申请实施例提供的第一掩膜板的第一种俯视示意图；
图3为本申请实施例提供的第二掩膜板的俯视示意图；
图4为本申请实施例提供的第一掩膜板的第二种俯视示意图；
图5为本申请实施例提供的第一掩膜板的第三种俯视示意图；
图6为本申请实施例提供的第一掩膜板的第四种俯视示意图；
图7为本申请实施例提供的第一掩膜板的第五种俯视示意图；
图8为本申请实施例提供的第一掩膜板的第六种俯视示意图；
图9为本申请实施例提供的蒸镀设备的截面示意图；
图10为本申请实施例提供的掩膜板制作工艺的流程图；
图11为本申请实施例提供的全面屏显示面板的公共电极蒸镀方法的流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
针对现有OLED显示面板存在电子元件设置区的公共电极影响透光率的技术问题，本申请实施例可以解决这个问题。
如图1、图2、图3所示，虚线框处为电子元件遮蔽区，本申请提供的掩膜构件10包括第一掩膜板101、第二掩膜板102，所述第一掩膜板101包括第一遮蔽区204、位于所述第一遮蔽区204内的第一开口区203、以及位于所述第一开口区203内的电子元件遮蔽区202和连接遮蔽区201，所述连接遮蔽区201连接所述电子元件遮蔽区202和所述第一遮蔽区204，连接遮蔽区201分为电子元件遮蔽区202一侧的第一连接遮蔽区2001和另一侧的第二连接遮蔽区2002，用于蒸镀公共电极得到公共电极的第一区域，所述第二掩膜板102包括第二遮蔽区302、位于所述第二遮蔽区302内的第二开口区301、以及位于所述第二开口区301内的所述电子元件遮蔽区202，所述第二遮蔽区302对应于所述第一开口区203和所述第一遮蔽区204，用于蒸镀公共电极得到公共电极的第二区域。
在本实施例中，掩膜构件包括第一掩膜板、第二掩膜板，所述第一掩膜板包括第一遮蔽区、位于所述第一遮蔽区内的第一开口区、以及位于所述第一开口区内的电子元件遮蔽区和连接遮蔽区，所述连接遮蔽区连接所述电子元件遮蔽区和所述第一遮蔽区，连接遮蔽区分为电子元件遮蔽区一侧的第一连接遮蔽区和另一侧的第二连接遮蔽区，用于蒸镀公共电极得到公共电极的第一区域，所述第二掩膜板包括第二遮蔽区、位于所述第二遮蔽区内的第二开口区、以及位于所述第二开口区内的所述电子元件遮蔽区，所述第二遮蔽区对应于所述第一开口区和所述第一遮蔽区，用于蒸镀公共电极得到公共电极的第二区域；在蒸镀公共电极时，用第一掩膜板蒸镀得到公共电极的第一区域，所述公共电极的第一区域在连接遮蔽区和电子元件遮蔽区未设置公共电极，用第二掩膜构件蒸镀得到公共电极的第二区域，所述公共电极的第二区域在连接遮蔽区设置有公共电极，公共电极的第一区域和公共电极的第二区域共同构成公共电极，所述公共电极在电子元件遮蔽区未设置公共电极。
在一种实施例中，在掩膜构件10中，如图4所示，所述第一连接遮蔽区201与第一开口区203的一条边连接，所述电子元件遮蔽区202与第一连接遮蔽区201在基板上的投影相接触，电子元件遮蔽区202的掩膜材料通过第一连接遮蔽区201的掩膜材料与第一开口区203连接，达到固定的效果。
在一种实施例中，在掩膜构件10中，如图4所示，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的一条边连接。
在一种实施例中，在掩膜构件10中，如图4所示，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的长边连接。
在一种实施例中，在掩膜构件10中，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的短边连接。
在一种实施例中，在掩膜构件10中，如图5所示，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的两条边连接。
在一种实施例中，在掩膜构件10中，如图6所示，所述第一连接遮蔽区201形状为L型。
在一种实施例中，在掩膜构件10中，所述第一连接遮蔽区201形状为L型，所述第一连接遮蔽区201与第一开口区203的长边连接。
在一种实施例中，在掩膜构件10中，所述第一连接遮蔽区201形状为L型，所述第一连接遮蔽区201与第一开口区203的短边连接。
在一种实施例中，在掩膜构件10中，如图6所示，所述第一连接遮蔽区201形状为L型，所述第一连接遮蔽区201与第一开口区203的两条边连接。
在一种实施例中，在掩膜构件10中，如图7所示，所述第一连接遮蔽区201与第一开口区203的三条边连接。
在一种实施例中，在掩膜构件10中，如图7所示，所述第一连接遮蔽区201形状为T型。
在一种实施例中，在掩膜构件10中，如图7所示，所述第一连接遮蔽区201形状为T型，所述第一连接遮蔽区201与所述第一开口区203的两条长边和一条短边连接。
在一种实施例中，在掩膜构件10中，所述第一连接遮蔽区201形状为T型，所述第一连接遮蔽区201与所述第一开口区203的两条短边和一条长边连接。
在一种实施例中，在掩膜构件10中，如图8所示，第一连接遮蔽区201与第一开口区203的四条边连接。
在一种实施例中，在掩膜构件10中，所述第二开口区301面积大于第一连接遮蔽区201，在使用第二掩膜板102蒸镀第一连接遮蔽区201时，第二开口区301面积大于第一连接遮蔽区201，可以确保第一连接遮蔽区201的公共电极整面设置。
在一种实施例中，在掩膜构件10中，第一掩膜构件的第一开口区203边界为面板显示区外扩50至500um，保证面板显示区整面蒸镀公共电极。
在一种实施例中，在掩膜构件10中，第二掩膜构件的第二开口区301边界较第一连接遮蔽区201外扩50至500um。
在一种实施例中，在掩膜构件10中，所述第一连接遮蔽区201包围所述电子元件遮蔽区202设置。
在一种实施例中，在掩膜构件10中，所述电子元件为摄像头，所述电子元件遮蔽区202形状为圆形。
在一种实施例中，在掩膜构件10中，所述电子元件为屏下通话膜组，所述电子元件遮蔽区202形状为矩形。
在一种实施例中，在掩膜构件10中，所述电子元件遮蔽区202边界比较电子元件边界外扩50至500um。
在一种实施例中，在掩膜构件10中，第一掩膜板101厚度为0.02~0.2 mm。
在一种实施例中，在掩膜构件10中，第一掩膜板101厚度为0.08~0.12 mm。
在一种实施例中，在掩膜构件10中，第二掩膜板102厚度为0.02~0.2 mm。
在一种实施例中，在掩膜构件10中，第一掩膜板101厚度为0.08~0.12 mm。
在一种实施例中，在掩膜构件10中，第一掩膜板101厚度大于所述第二掩模板。
在一种实施例中，在掩膜构件10中，第一掩膜板101厚度小于所述第二掩模板。
在一种实施例中，在掩膜构件10中，第一掩膜板101厚度等于所述第二掩模板。
如图9所示，本申请还提供一种蒸镀设备，蒸镀设备包括承载平台、掩膜构件和蒸镀单元，掩膜构件包括第一掩膜板和第二掩膜板，所述第一掩膜板包括第一遮蔽区、位于所述第一遮蔽区内的第一开口区、以及位于所述第一开口区内的电子元件遮蔽区和连接遮蔽区，所述连接遮蔽区连接所述电子元件遮蔽区和所述第一遮蔽区，连接遮蔽区分为电子元件遮蔽区一侧的第一连接遮蔽区和另一侧的第二连接遮蔽区，所述第二掩膜板包括第二遮蔽区、位于所述第二遮蔽区内的第二开口区、以及位于所述第二开口区内的所述电子元件遮蔽区，所述第二遮蔽区对应于所述第一开口区和所述第一遮蔽区。
在本实施例中，蒸镀设备包括第一掩膜板和第二掩膜板，所述第一掩膜板包括第一遮蔽区、位于所述第一遮蔽区内的第一开口区、以及位于所述第一开口区内的电子元件遮蔽区和连接遮蔽区，所述连接遮蔽区连接所述电子元件遮蔽区和所述第一遮蔽区，连接遮蔽区分为电子元件遮蔽区一侧的第一连接遮蔽区和另一侧的第二连接遮蔽区，所述第二掩膜板包括第二遮蔽区、位于所述第二遮蔽区内的第二开口区、以及位于所述第二开口区内的所述电子元件遮蔽区，所述第二遮蔽区对应于所述第一开口区和所述第一遮蔽区。
在一种实施例中，在蒸镀设备中，如图4所示，所述第一连接遮蔽区201与第一开口区203的一条边连接，所述电子元件遮蔽区202与第一连接遮蔽区201在基板上的投影相接触，电子元件遮蔽区202的掩膜材料通过第一连接遮蔽区201的掩膜材料与第一开口区203连接，达到固定的效果。
在一种实施例中，在蒸镀设备中，如图4所示，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的一条边连接。
在一种实施例中，在蒸镀设备中，如图4所示，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的长边连接。
在一种实施例中，在蒸镀设备中，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的短边连接。
在一种实施例中，在蒸镀设备中，如图5所示，所述第一连接遮蔽区201形状为I型，所述第一连接遮蔽区201与第一开口区203的两条边连接。
在一种实施例中，在蒸镀设备中，如图6所示，所述第一连接遮蔽区201形状为L型。
在一种实施例中，在蒸镀设备中，所述第一连接遮蔽区201形状为L型，所述第一连接遮蔽区201与第一开口区203的长边连接。
在一种实施例中，在蒸镀设备中，所述第一连接遮蔽区201形状为L型，所述第一连接遮蔽区201与第一开口区203的短边连接。
在一种实施例中，在蒸镀设备中，如图6所示，所述第一连接遮蔽区201形状为L型，所述第一连接遮蔽区201与第一开口区203的两条边连接。
在一种实施例中，在蒸镀设备中，如图7所示，所述第一连接遮蔽区201与第一开口区203的三条边连接。
在一种实施例中，在蒸镀设备中，如图7所示，所述第一连接遮蔽区201形状为T型。
在一种实施例中，在蒸镀设备中，如图7所示，所述第一连接遮蔽区201形状为T型，所述第一连接遮蔽区201与所述第一开口区203的两条长边和一条短边连接。
在一种实施例中，在蒸镀设备中，所述第一连接遮蔽区201形状为T型，所述第一连接遮蔽区201与所述第一开口区203的两条短边和一条长边连接。
在一种实施例中，在蒸镀设备中，如图8所示，第一连接遮蔽区201与第一开口区203的四条边连接。
在一种实施例中，在蒸镀设备中，所述第二开口区301面积大于第一连接遮蔽区201，在使用第二掩膜板102蒸镀第一连接遮蔽区201时，第二开口区301面积大于第一连接遮蔽区201，可以确保第一连接遮蔽区201的公共电极整面设置。
在一种实施例中，在蒸镀设备中，第一掩膜构件的第一开口区203边界为面板显示区外扩50至500um，保证面板显示区整面蒸镀公共电极。
在一种实施例中，在蒸镀设备中，第二掩膜构件的第二开口区301边界较第一连接遮蔽区201外扩50至500um。
在一种实施例中，在蒸镀设备中，所述第一连接遮蔽区201包围所述电子元件遮蔽区202设置。
在一种实施例中，在蒸镀设备中，所述电子元件为摄像头，所述电子元件遮蔽区202形状为圆形。
在一种实施例中，在蒸镀设备中，所述电子元件为屏下通话膜组，所述电子元件遮蔽区202形状为矩形。
在一种实施例中，在蒸镀设备中，所述电子元件遮蔽区202边界比较电子元件边界外扩50至500um。
在一种实施例中，在蒸镀设备中，第一掩膜板101厚度为0.02~0.2 mm。
在一种实施例中，在蒸镀设备中，第一掩膜板101厚度为0.08~0.12 mm。
在一种实施例中，在蒸镀设备中，第二掩膜板102厚度为0.02~0.2 mm。
在一种实施例中，在蒸镀设备中，第一掩膜板101厚度为0.08~0.12 mm。
在一种实施例中，在蒸镀设备中，第一掩膜板101厚度大于所述第二掩模板。
在一种实施例中，在蒸镀设备中，第一掩膜板101厚度小于所述第二掩模板。
在一种实施例中，在蒸镀设备中，第一掩膜板101厚度等于所述第二掩模板。
如图10所示，本申请还提供一种掩膜板制作工艺，包括如下步骤：
s1、涂胶：提供一光学高分子PC复合板材，在所述光学高分子PC复合板材表面旋涂抗反射中性密着层，在所述抗反射中性密着层上旋涂中性U光刻胶，
s2、光刻：通过光刻直写掩膜机对中性UV光刻胶的预设区域进行激光曝光，
S3、显影：将光刻后的光学高分子PC复合板材置于一显影槽进行浸泡显影，所述显影槽内设有显影液，
S4、坚膜。
在一种实施例中，所述Ⅳ光刻胶由中性UV油、光刻胶和助剂按照4:5:1的比例混合而成。
在一种实施例中，在所述步骤S1中，包括如下步骤：
S11、提供一光学高分子PC复合板材，
S12、在所述光学高分子PC复合板材上涂抹抗反射中性密着层，通过自然流平方式使抗反射中性密着层平铺至整个光学高分子PC复合板材上，
S13、待所述抗反射中性密着层晾干后，在其上涂抹中性V光刻胶，通过旋转甩平方式将中性Ⅳ光刻胶平铺在抗反射中性密着层上，
S14、进行烘烤固化。
在一种实施例中，在涂胶工艺中，能够保证每层胶都能够均匀覆盖，再通过最后的烘烤使各层之间紧密连接。
如图11所示，本申请还提供一种全面屏显示面板的公共电极蒸镀方法，其用于全面屏发光元器件公共电极制作，该方法具体操作和使用设备如下：
步骤一、将蒸镀公共电极使用的第一掩膜版传入第一公共电极蒸镀腔内部，
步骤二、基板完成公共电极前蒸镀制程，传送入第一公共电极蒸镀腔，
步骤三、调整第一掩膜板101和基板的对位和对位偏差基板并通过电荷耦合元件完成对位，在腔体内第一掩膜版与基板紧贴在一起，
步骤四、基板完成第一次公共电极蒸镀制程，公共电极透过第一掩膜板101第一开口区203成膜，此时公共电极膜层覆盖面板显示区部分位置，电子元件遮蔽区202处无公共电极成膜，然后传送至第二公共电极蒸镀腔，或将第一掩膜板101替换为第二掩膜板102，
步骤五、调整第二掩膜板102和基板的对位和对位偏差基板并通过电荷耦合元件完成对位，在腔体内第二掩膜版与基板紧贴在一起，
步骤六、调整第二掩膜板102和基板的对位和对位偏差基板并通过电荷耦合元件完成对位，在腔体内金属掩膜版与基板紧贴在一起，
步骤七、基板完成第一次公共电极蒸镀制程，公共电极透过第二掩膜板102第二开口区301成膜，此时透过第二掩膜板102蒸镀的公共电极膜层与基板上已存在的公共电极膜层搭接，连接成整片公共电极或连续的公共电极网络，然后传送至下一步制程。
根据上述实施例可知：
本申请提供一种掩膜构件，该掩膜构件包括第一掩膜板、第二掩膜板，所述第一掩膜板包括第一遮蔽区、位于所述第一遮蔽区内的第一开口区、以及位于所述第一开口区内的电子元件遮蔽区和连接遮蔽区，所述连接遮蔽区连接所述电子元件遮蔽区和所述第一遮蔽区，连接遮蔽区分为电子元件遮蔽区一侧的第一连接遮蔽区和另一侧的第二连接遮蔽区，用于蒸镀公共电极得到公共电极的第一区域，所述第二掩膜板包括第二遮蔽区、位于所述第二遮蔽区内的第二开口区、以及位于所述第二开口区内的所述电子元件遮蔽区，所述第二遮蔽区对应于所述第一开口区和所述第一遮蔽区，用于蒸镀公共电极得到公共电极的第二区域；在蒸镀公共电极时，用第一掩膜板蒸镀得到公共电极的第一区域，所述公共电极的第一区域在连接遮蔽区和电子元件遮蔽区未设置公共电极，用第二掩膜构件蒸镀得到公共电极的第二区域，所述公共电极的第二区域在连接遮蔽区设置有公共电极，公共电极的第一区域和公共电极的第二区域共同构成公共电极，所述公共电极在电子元件遮蔽区未设置公共电极。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种掩膜构件，其包括：
    第一掩膜板，所述第一掩膜板包括第一遮蔽区、位于所述第一遮蔽区内的第一开口区、以及位于所述第一开口区内的电子元件遮蔽区和连接遮蔽区，所述连接遮蔽区连接所述电子元件遮蔽区和所述第一遮蔽区，连接遮蔽区分为电子元件遮蔽区一侧的第一连接遮蔽区和另一侧的第二连接遮蔽区，用于蒸镀公共电极得到公共电极的第一区域；
    第二掩膜板，所述第二掩膜板包括第二遮蔽区、位于所述第二遮蔽区内的第二开口区、以及位于所述第二开口区内的所述电子元件遮蔽区，所述第二遮蔽区对应于所述第一开口区和所述第一遮蔽区，用于蒸镀公共电极得到公共电极的第二区域。
  2. 根据权利要求1所述的掩膜构件，其中，所述第一连接遮蔽区与所述第一开口区的一条边连接。
  3. 根据权利要求2所述的掩膜构件，其中，所述第一连接遮蔽区形状为I型。
  4. 根据权利要求2所述的掩膜构件，其中，所述第一连接遮蔽区与所述第一开口区的长边连接。
  5. 根据权利要求2所述的掩膜构件，其中，所述第一连接遮蔽区与所述第一开口区的短边连接。
  6. 根据权利要求1所述的掩膜构件，其中，所述第一连接遮蔽区与所述第一开口区的两条边连接。
  7. 根据权利要求6所述的掩膜构件，其中，所述第一连接遮蔽区形状为L型。
  8. 根据权利要求1所述的掩膜构件，其中，所述第一连接遮蔽区与所述第一开口区的三条边连接。
  9. 根据权利要求8所述的掩膜构件，其中，所述第一连接遮蔽区形状为T型。
  10. 根据权利要求1所述的掩膜构件，其中，所述第一连接遮蔽区与所述第一开口区的四条边连接。
  11. 根据权利要求1所述的掩膜构件，其中，所述第二开口区面积大于所述第一连接遮蔽区。
  12. 根据权利要求1所述的掩膜构件，其中，所述第一掩膜构件的所述第一开口区边界为面板显示区外扩50至500um。
  13. 根据权利要求1所述的掩膜构件，其中，所述第二掩膜构件的所述第二开口区边界较所述第一连接遮蔽区外扩50至500um。
  14. 根据权利要求1所述的掩膜构件，其中，所述第一连接遮蔽区包围所述电子元件遮蔽区设置。
  15. 根据权利要求1所述的掩膜构件，其中，所述电子元件为摄像头，所述电子元件遮蔽区形状为圆形。
  16. 根据权利要求1所述的掩膜构件，其中，所述电子元件为屏下通话膜组，所述电子元件遮蔽区形状为矩形。
  17. 根据权利要求1所述的掩膜构件，其中，所述电子元件遮蔽区边界比较所述电子元件边界外扩50至500um。
  18. 根据权利要求1所述的掩膜构件，其中，所述第一掩膜板厚度为0.02~0.2 mm。
  19. 根据权利要求1所述的掩膜构件，其中，所述第二掩膜板厚度为0.02~0.2 mm。
  20. 根据权利要求1所述的掩膜构件，其中，所述第一掩膜板厚度大于所述第二掩模板。
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