WO2019127674A1 - 黑色矩阵与间隔物的制作方法 - Google Patents

黑色矩阵与间隔物的制作方法 Download PDF

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Publication number
WO2019127674A1
WO2019127674A1 PCT/CN2018/072612 CN2018072612W WO2019127674A1 WO 2019127674 A1 WO2019127674 A1 WO 2019127674A1 CN 2018072612 W CN2018072612 W CN 2018072612W WO 2019127674 A1 WO2019127674 A1 WO 2019127674A1
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Prior art keywords
black matrix
photoresist layer
spacer
black
transparent
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PCT/CN2018/072612
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English (en)
French (fr)
Inventor
于承忠
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深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US15/925,320 priority Critical patent/US10488699B2/en
Publication of WO2019127674A1 publication Critical patent/WO2019127674A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes

Definitions

  • the present application relates to the field of display device technologies, and in particular, to a method for fabricating a black matrix and a spacer.
  • Liquid crystal display is the mainstream of flat panel displays. Its principle is to utilize the dielectric anisotropy and conductive anisotropy of liquid crystal molecules to convert the alignment state of liquid crystal molecules when an external electric field is applied, resulting in liquid crystal film generation.
  • a conventional liquid crystal display has a liquid crystal layer sandwiched between two glass substrates, and a thin film transistor (TFT), that is, an array substrate, is mounted on one of the glass substrates to drive the rotation of the liquid crystal to control each pixel.
  • TFT thin film transistor
  • Display another R, G, B color filter layer, that is, a color film substrate, is formed on the other substrate for forming the color of each pixel.
  • a photoresist spacer (Photo Spacer, PS) and a black matrix (BM) are usually formed on a color filter substrate, and a spacer is used to support the thickness of the liquid crystal cell to be isolated between the color filter substrate and the array substrate.
  • the black matrix mainly plays a light-shielding effect, preventing the scanning line and the data line from leaking light, and improving the contrast to achieve a better display effect.
  • the spacer and the black matrix each require an independent yellow light process, which results in a complicated manufacturing process of the liquid crystal display and high production cost.
  • the technical problem to be solved by the present application is to provide a method for fabricating a black matrix and a spacer, which solves the problems of complicated manufacturing process and high production cost of the black matrix and the spacer in the prior art.
  • the present application provides a method for fabricating a black matrix and a spacer, including:
  • Providing a multi-tone mask comprising a first light transmissive region and a second light transmissive region, wherein a transmittance of the first light transmissive region is greater than a transmittance of the second light transmissive region
  • the transparent photoresist layer and the black photoresist layer comprise a first portion facing the first light transmissive region and a second portion facing the second light transmissive region
  • the multi-tone mask is used
  • the film plate exposes the transparent photoresist layer and the black photoresist layer, the first portion of the transparent photoresist layer is used to form a main spacer, the first portion of the black photoresist layer For forming a first black matrix, the main spacer is laminated on the first black matrix, and the second portion of the transparent photoresist layer is used to form a secondary spacer, the second portion of the A black photoresist layer is used to form a second black matrix, and the main spacers are stacked on the second black matrix.
  • the method further comprises: treating the transparent photoresist layer and the black light with a developing solution a photoresist layer, the first portion of the transparent photoresist layer remaining and forming the main spacer, the first portion of the black photoresist layer remaining and forming the first black matrix, the developing The liquid partially dissolves the transparent photoresist layer of the second portion, the remaining portion of the transparent photoresist layer remaining and forming the auxiliary spacer, the black light of the second portion The engraved layer remains and forms the second black matrix.
  • the first light-transmitting region includes a full light-transmissive region and a first semi-transmissive region, and the all-transmissive region is located in the first semi-transmissive region, and the multi-tone mask is used to expose the light-transmissive region.
  • a vertical projection of the main spacer formed on the substrate is located within a range of the first black matrix.
  • the second transparent region includes a second semi-transmissive region and the first semi-transmissive region, and the second semi-transmissive region has a light transmittance greater than that of the first semi-transmissive region. Rate, the second semi-transmissive region is located in the first semi-transmissive region, and the transparent photoresist layer and the black photoresist layer are exposed by the multi-tone mask and developed to form The vertical projection of the secondary spacer on the base substrate is within the range of the second black matrix.
  • the multi-tone mask further comprises a third light transmissive region, wherein the third light transmissive region has the same transmittance as the first semi-transmissive region, and the multi-tone mask is used to expose the After the transparent photoresist layer and the black photoresist layer, the transparent photoresist layer and the black photoresist layer comprise a third portion facing the third light-transmissive region, which is treated with a developer After the transparent photoresist layer and the black photoresist layer, the developer dissolves the third portion of the transparent photoresist layer, and the third portion of the black photoresist layer remains And forming the third black matrix.
  • a thin film transistor is formed on a surface of the base substrate, and the black photoresist layer is coated on the thin film transistor.
  • a color resist layer is formed on the thin film transistor, and the black photoresist layer is coated on the color resist layer.
  • a transparent conductive layer is deposited on the surface of the base substrate, and the black photoresist layer is coated on the transparent conductive layer.
  • the black photoresist layer is pre-baked before the transparent photoresist layer is coated on the black photoresist layer. After coating the transparent photoresist layer on the black photoresist layer, pre-baking the transparent photoresist layer.
  • a spacer (main spacer and auxiliary spacer) and a black matrix are formed by a single yellow light process by simultaneously exposing a black photoresist layer and a transparent photoresist layer process using a multi-tone mask.
  • the first black matrix and the second black matrix reduce the manufacturing process of the liquid crystal display, reduce the production cost, shorten the production cycle, and avoid the alignment error existing when the spacer is separated from the black matrix, thereby improving the product. Yield.
  • FIG. 1 is a schematic diagram of step S101 of a method for fabricating a black matrix and a spacer according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram of step S102 of a method for fabricating a black matrix and a spacer according to an embodiment of the present application.
  • FIG. 3 is a schematic diagram of step S103 of a method for fabricating a black matrix and a spacer according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a multi-tone mask provided by an embodiment of the present application.
  • FIG. 5 is a schematic diagram of step S104 of a method for fabricating a black matrix and a spacer according to an embodiment of the present application.
  • FIG. 6 and FIG. 7 are schematic diagrams showing an embodiment of a method for fabricating a black matrix and a spacer according to an embodiment of the present application.
  • FIG. 8 is a schematic diagram of an embodiment of an upper substrate according to an embodiment of the present application.
  • FIG. 9 is a schematic diagram of an embodiment of a lower substrate according to an embodiment of the present application.
  • the liquid crystal display device includes a display device such as a mobile phone, a display, a tablet computer, and the like.
  • the liquid crystal display device is a liquid crystal display device using COA (Color Filter on Array) technology, that is, R (red), G (green), B (blue) color resist of the color resist layer 90 and the thin film transistor 80 are fabricated.
  • COA Color Filter on Array
  • the steps of the method for fabricating the black matrix and the spacer provided by the embodiments of the present application are as follows.
  • the display panel of the COA type includes two transparent substrates, that is, an upper substrate and a lower substrate.
  • a common electrode is formed on the upper substrate, and a thin film transistor 80, a pixel electrode, and a color resist layer 90 are formed on the lower substrate.
  • the black matrix and spacers provided may be fabricated on the upper substrate or on the lower substrate.
  • the base substrate 10 is a glass substrate.
  • the base substrate 10 may be a substrate made of other transparent materials such as plastic.
  • the surface of the base substrate 10 is flat to facilitate laminating various layer structures on the surface of the base substrate 10 to form corresponding devices.
  • the black photoresist layer 20 is uniformly coated on the base substrate 10 and subjected to a pre-bake treatment to apply a black photoresist layer coated on the base substrate 10. Most of the solvent in 20 evaporates.
  • the chamber to be operated is also evacuated so that the black photoresist layer 20 rapidly evaporates most of the solvent under the action of low-pressure environment and heating, which is beneficial to the subsequent black light.
  • the exposure and development operation of the engraved layer 20 facilitates subsequent application of the transparent photoresist layer 30 on the black photoresist layer 20 to avoid mixing of the black photoresist layer 20 with the transparent photoresist layer 30.
  • the transparent photoresist layer 30 is uniformly coated on the black photoresist layer 20 and subjected to a pre-bake treatment to transparently coat the black photoresist layer 20. Most of the solvent within the photoresist layer 30 evaporates. In one embodiment, the operating chamber is also evacuated so that the transparent photoresist layer 30 rapidly evaporates most of the solvent under the action of low pressure environment and heating, which is beneficial to the subsequent transparent photoresist. Exposure and development operations of layer 30.
  • a multi-tone mask 40 (Multi-Tone Mask) is a mask having different transmittances at different portions, and when the transparent photoresist layer 30 and the black photoresist layer 20 are exposed.
  • the multi-tone mask 40 is placed between the light source and the transparent photoresist layer 30 and the black photoresist layer 20, and the light source emits ultraviolet light through the multi-tone mask 40 and then irradiates the transparent photoresist layer 30 and On the black photoresist layer 20, when the light source passes through the position on the multi-tone mask 40 where the light transmittance is different, the light intensity irradiated onto the transparent photoresist layer 30 and the black photoresist layer 20 is different.
  • the ultraviolet light when the light irradiated onto the transparent photoresist layer 30 is strong, the ultraviolet light is irradiated onto the black photoresist layer 20 through the transparent photoresist layer 30, so that the black photoresist layer 20 is crosslinked.
  • the ultraviolet light also causes the transparent photoresist layer 30 to undergo a crosslinking reaction; when the light irradiated onto the transparent photoresist layer 30 is weak, the ultraviolet light is irradiated to the black photoresist layer 20 through the transparent photoresist layer 30.
  • the red photoresist layer 20 is cross-linked, and the transparent photoresist layer 30 does not undergo a cross-linking reaction or only partially undergoes a cross-linking reaction; when the multi-tone mask 40 completely blocks ultraviolet light, transparent lithography Both the adhesive layer 30 and the black photoresist layer 20 are not irradiated with ultraviolet light, in other words, neither the transparent photoresist layer 30 nor the black photoresist layer 20 undergoes a crosslinking reaction.
  • the multi-tone mask 40 includes a first light transmissive region 42 and a second light transmissive region 44 , and the first light transmissive region 42 has a light transmittance greater than the second light transmissive region 44 .
  • the transparent photoresist layer 30 and the black photoresist layer 20 are exposed by the multi-tone mask 40, and the transparent photoresist layer 30 and the black photoresist layer 20 are formed to face the first light-transmissive region 42.
  • the first portion 32 and the second portion 34 of the second light transmissive region 44 are formed to face the first light-transmissive region 42.
  • the black photoresist layer 20 of the first portion 32 undergoes a complete cross-linking reaction
  • the transparent photoresist layer 30 of the first portion 32 also undergoes a complete cross-linking reaction
  • the black photoresist layer 20 of the second portion 34 is completely cross-linked.
  • the transparent photoresist layer 30 of the second portion 34 undergoes a partial crosslinking reaction.
  • the multi-tone mask 40 further includes a non-transmissive region, that is, a region having a light transmittance of zero, and the transparent photoresist layer 30 and the black photoresist layer 20 are stripped to portions of the non-transmissive region. In part, the peeling portion of the transparent photoresist layer 30 and the black photoresist layer 20 did not undergo a crosslinking reaction.
  • the different degrees of light transmittance of different regions of the multi-tone mask 40 are used to make the degree of cross-linking reaction between the transparent photoresist layer 30 and the different portions of the black photoresist layer 20 different.
  • the transparent photoresist layer 30 and the black photoresist layer 20 of different degrees are retained after the subsequent development process.
  • the transparent photoresist layer 30 and the black photoresist layer 20 are treated with a developing solution to place the substrate 10 with the transparent photoresist layer 30 and the black photoresist layer 20 on the developing liquid.
  • the development process is completed by spraying, soaking and the like.
  • the transparent photoresist layer 30 and the black photoresist layer 20 in which the crosslinking reaction does not occur are dissolved, and the transparent photoresist layer 30 and the black photoresist layer 20 in which the crosslinking reaction occurs do not occur. It will be dissolved while remaining on the base substrate 10.
  • the transparent photoresist layer 30 of the first portion 32 is left to form the main spacer 62
  • the black photoresist layer 20 of the first portion 32 is left to form the first black matrix 52
  • the main spacer 62 is laminated on the main spacer 62.
  • the developer partially dissolves the transparent photoresist layer 30 of the second portion 34, the remaining transparent photoresist layer 30 of the second portion 34 forms the auxiliary spacer 64, and the black photoresist layer 20 of the second portion 34 is retained to form the first
  • the two black matrixes 54 and the main spacers 62 are stacked on the second black matrix 54.
  • the portion of the second portion 34 where the transparent photoresist layer 30 is dissolved is controlled by the first light-transmitting region 42 and the second light-transmitting portion of the multi-tone mask 40.
  • the difference in light transmittance of the region 44 can control the difference in height between the main spacer 62 and the auxiliary spacer 64.
  • the peeling portion of the transparent photoresist layer 30 and the black photoresist layer 20 are completely dissolved after development.
  • the first light transmissive region 42 includes a full light transmissive region 402 and a first semi-transmissive region 404 , and the full light transmissive region 402 is located in the first semi-transmissive region 404 and adopts multi-tone.
  • the mask 40 exposes the transparent photoresist layer 30 and the black photoresist layer 20 and develops, the vertical projection of the formed main spacer 62 on the substrate 10 is within the range of the first black matrix 52.
  • the light transmittance of the all-transmissive region 402 is 100%, and the transparent photoresist layer 30 and the black photoresist layer 20 corresponding to the fully transparent region 402 are completely cross-linked, and are retained after development;
  • the black photoresist layer 20 of the half transparent region 404 undergoes a complete crosslinking reaction, and is retained after development, and the transparent photoresist layer 30 corresponding to the first semi-transmissive region 404 does not undergo a crosslinking reaction, and is dissolved after development. .
  • the fully transparent region 402 is located in the first semi-transmissive region 404, and the vertical projection of the main spacer 62 formed on the substrate 10 is within the range of the first black matrix 52, in other words, the first black matrix.
  • the size of 52 is larger than the main spacer 62, and the stepped shape facilitates the stable stacking of the main spacers 62 on the first black matrix 52, thereby improving the stability of the liquid crystal cell.
  • the second transparent region 44 includes a second semi-transmissive region 406 and a first semi-transmissive region 404.
  • the transmittance of the second semi-transmissive region 406 is greater than that of the first semi-transparent region 406.
  • the optical zone 404, the second semi-transmissive region 406 is located in the first semi-transmissive region 404, and the transparent photoresist layer 30 and the black photoresist layer 20 are exposed by the multi-tone mask 40 and developed, and the auxiliary spacer is formed.
  • the vertical projection of the object 64 on the base substrate 10 is within the range of the second black matrix 54.
  • the transparent photoresist layer 30 corresponding to the second semi-transmissive region 406 and the black photoresist layer 20 undergo partial crosslinking reaction, and the black photoresist layer 20 is retained after being developed, and the transparent photoresist layer 30 is developed. Partially retained; the black photoresist layer 20 corresponding to the first semi-transmissive region 404 undergoes a complete cross-linking reaction, which is retained after development, and the transparent photoresist layer 30 corresponding to the first semi-transmissive region 404 is not cross-linked. The reaction is dissolved after development.
  • the second semi-transmissive region 406 is located in the first semi-transmissive region 404, and the vertical projection of the auxiliary spacer 64 formed on the substrate 10 is within the range of the second black matrix 54, in other words, the second The size of the black matrix 54 is larger than the auxiliary spacers 64, and the stepped shape facilitates the stable stacking of the auxiliary spacers 64 on the second black matrix 54, thereby improving the stability of the liquid crystal cell.
  • the black photoresist layer 20 and the transparent photoresist layer 30 are simultaneously exposed by a yellow light process to form spacers (main spacer 62 and auxiliary spacer 64) and black matrix (p.
  • a black matrix 52 and a second black matrix 54) reduce the manufacturing process of the liquid crystal display, reduce the production cost, shorten the production cycle, and avoid the alignment error existing when the spacer is separated from the black matrix, thereby improving the product. Yield.
  • the multi-tone mask 40 further includes a third light transmissive region 46.
  • the third light transmissive region 46 has the same transmittance as the first semi-transmissive region 404, and is covered by a multi-tone mask.
  • the film 40 exposes the transparent photoresist layer 30 and the black photoresist layer 20
  • the transparent photoresist layer 30 and the black photoresist layer 20 form a third portion 36 facing the third light-transmissive region 46, in combination with FIG.
  • the transparent photoresist layer 30 and the black photoresist layer 20 are processed by the developer, the developer dissolves the transparent photoresist layer 30 of the third portion 36, and the black photoresist layer 20 of the third portion 36 forms a third black layer.
  • Matrix 56 Specifically, the black photoresist layer 20 corresponding to the third light-transmissive region 46 undergoes a complete cross-linking reaction, and is retained after development, and the transparent photoresist layer 30 corresponding to the third light-transmitting region 46 does not undergo cross-linking reaction, and development is performed. After being dissolved, in other words, the transparent photoresist layer 30 and the black photoresist layer 20 of the third portion 36 are exposed and developed, the black photoresist layer 20 remains to form a third black matrix 56, and the third black matrix 56 is used for placement. Scan lines and data lines leak light.
  • the transparent photoresist layer 30 and the black photoresist layer 20 remaining after baking exposure and development are cured to cure the remaining transparent photoresist layer 30 and the black photoresist layer 20.
  • the display panel of the COA type includes two transparent substrates, that is, an upper substrate and a lower substrate.
  • a common electrode is formed on the upper substrate, and a thin film transistor 80, a pixel electrode, and a color resist layer 90 are formed on the lower substrate.
  • the black matrix and spacers provided may be fabricated on the upper substrate or on the lower substrate.
  • transparent conductive is deposited on the surface of the base substrate 10 before the black photoresist layer 20 is coated on the base substrate 10.
  • Layer 70, black photoresist layer 20 is coated on transparent conductive layer 70.
  • the transparent conductive layer 70 is formed of indium tin oxide (ITO) on the base substrate 10 by chemical vapor deposition or physical vapor deposition.
  • ITO indium tin oxide
  • the transparent conductive layer 70 has high transmittance and electrical conductivity. it is good.
  • the transparent conductive layer 70 is used to form a common electrode.
  • the voltage difference between the common electrode of the upper substrate and the pixel electrode of the lower substrate drives the liquid crystal to be deflected.
  • the black matrix and the spacer are formed on the upper substrate in a simple manner, with less process and high product yield.
  • a thin film transistor is formed on the surface of the base substrate 10 before the black photoresist layer 20 is coated on the base substrate 10. 80.
  • a black photoresist layer 20 is coated on the thin film transistor 80.
  • the thin film transistor 80 includes a gate electrode 82, a gate insulating layer 84, an active layer 810, a source electrode 86, a drain electrode 88, and the like which are sequentially stacked.
  • a color resist layer 90 is formed on the thin film transistor 80, and a black photoresist layer 20 is coated on the color resist layer 90.
  • the black matrix and the spacer are formed on the lower substrate, which is advantageous for reducing the alignment difficulty of the lower substrate and the upper substrate, thereby improving the alignment accuracy and improving the product yield.
  • the black photoresist layer 20 and the transparent photoresist layer 30 are simultaneously exposed by a yellow light process to form spacers (main spacer 62 and auxiliary spacer 64) and black matrix (p.
  • a black matrix 52 and a second black matrix 54) reduce the manufacturing process of the liquid crystal display, reduce the production cost, shorten the production cycle, and avoid the alignment error existing when the spacer is separated from the black matrix, thereby improving the product. Yield.

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Abstract

一种黑色矩阵与间隔物的制作方法，包括：提供衬底基板(10)，在衬底基板(10)上涂布黑色光刻胶层(20)；在黑色光刻胶层(20)上涂布透明光刻胶层(30)；提供多色调掩膜板(40)，多色调掩膜板(40)包括第一透光区(42)和第二透光区(44)，第一透光区(42)的透光率大于第二透光区(44)的透光率，透明光刻胶层(30)和黑色光刻胶层(20)包括正对第一透光区(42)的第一部分(32)及正对第二透光区(44)的第二部分(34)，采用多色调掩膜板(40)曝光透明光刻胶层(30)和黑色光刻胶层(20)，第一部分(32)的透明光刻胶层(30)用于形成主间隔物(62)，第一部分(32)的黑色光刻胶层(20)用于形成第一黑色矩阵(52)，主间隔物(62)层叠于第一黑色矩阵(52)上，第二部分(34)的透明光刻胶层(30)用于形成辅间隔物(64)，第二部分(34)的黑色光刻胶层(20)用于形成第二黑色矩阵(54)，辅间隔物(64)叠于第二黑色矩阵(54)上。

Description

黑色矩阵与间隔物的制作方法
本申请要求于2017年12月29日提交中国专利局、申请号为201711473164.6、申请名称为“黑色矩阵与间隔物的制作方法”的中国专利申请的优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本申请涉及显示设备技术领域，尤其是涉及一种黑色矩阵与间隔物的制作方法。
背景技术
液晶显示器(Liquid Crystal Display，LCD)是目前平面显示器的主流，其原理是利用液晶分子的介电各向异性与导电各向异性，在外加电场时使液晶分子的排列状态转换，造成液晶薄膜产生各种光电效应。传统的液晶显示器的结构为两片玻璃基板中间夹有液晶层，在其中一片玻璃基板上制备薄膜晶体管(Thin Film Transistor，TFT)，即阵列基板，用于驱动液晶的旋转，控制每个像素的显示；另一块基板上制备R、G、B彩色滤光层，即彩膜基板，用于形成每个像素的色彩。目前，通常在彩膜基板上制作光阻间隔物(Photo Spacer，PS)和黑色矩阵(Black Matrix，BM)，间隔物用于支撑液晶盒厚，以在彩膜基板和阵列基板之间隔离出液晶注入的间隙，黑色矩阵主要起遮光作用，防止扫描线和数据线漏光，提高对比度，以达到较佳的显示效果。
现有技术中，制作间隔物和黑色矩阵各需要一道独立的黄光制程，导致液晶显示器的制作工序复杂，生产成本高。
申请内容
本申请要解决的技术问题是提供一种黑色矩阵与间隔物的制作方法，用以解决现有技术中黑色矩阵与间隔物的制作工序复杂，生产成本高的问题。
为解决上述技术问题，本申请提供一种黑色矩阵与间隔物的制作方法，包 括：
提供衬底基板，在所述衬底基板上涂布黑色光刻胶层；
在所述黑色光刻胶层上涂布透明光刻胶层；
提供多色调掩膜板，所述多色调掩膜板包括第一透光区和第二透光区，所述第一透光区的透光率大于所述第二透光区的透光率，所述透明光刻胶层和所述黑色光刻胶层包括正对所述第一透光区的第一部分及正对所述第二透光区的第二部分，采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层，所述第一部分的所述透明光刻胶层用于形成主间隔物，所述第一部分的所述黑色光刻胶层用于形成第一黑色矩阵，所述主间隔物层叠于所述第一黑色矩阵上，所述第二部分所述透明光刻胶层用于形成辅间隔物，所述第二部分的所述黑色光刻胶层用于形成第二黑色矩阵，所述主间隔物层叠于所述第二黑色矩阵上。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
其中，利用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层后，所述方法还包括，采用显影液处理所述透明光刻胶层和所述黑色光刻胶层，所述第一部分的所述透明光刻胶层保留并形成所述主间隔物，所述第一部分的所述黑色光刻胶层保留并形成所述第一黑色矩阵，所述显影液部分溶解所述第二部分的所述透明光刻胶层，所述第二部分剩余的所述透明光刻胶层保留并形成所述辅间隔物，所述第二部分的所述黑色光刻胶层保留并形成所述第二黑色矩阵。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
其中，所述第一透光区包括全透光区和第一半透光区，所述全透光区位于所述第一半透光区内，采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层并显影后，形成的所述主间隔物在所述衬底基板上的垂直投影位于所述第一黑色矩阵的范围内。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
其中，所述第二透光区包括第二半透光区和所述第一半透光区，所述第二半透光区的透光率大于所述第一半透光区的透光率，所述第二半透光区位于所述第一半透光区内，采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层并显影后，形成的所述辅间隔物在所述衬底基板上的垂直投影位于所述第二黑色矩阵的范围内。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
其中，所述多色调掩膜板还包括第三透光区，所述第三透光区与所述第一半透光区的透光率相同，采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层后，所述透明光刻胶层和所述黑色光刻胶层包括正对所述第三透光区的第三部分，在采用显影液处理所述透明光刻胶层和所述黑色光刻胶层后，所述显影液溶解所述第三部分的所述透明光刻胶层，所述第三部分的所述黑色光刻胶层保留并形成所述第三黑色矩阵。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
其中，在所述衬底基板上涂布所述黑色光刻胶层之前，在所述衬底基板的表面形成薄膜晶体管，所述黑色光刻胶层涂布于所述薄膜晶体管上。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
其中，在所述衬底基板的表面形成所述薄膜晶体管之后，在所述薄膜晶体管上形成色阻层，所述黑色光刻胶层涂布于所述色阻层上。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所 述辅间隔物。
其中，在所述衬底基板上涂布所述黑色光刻胶层之前，在所述衬底基板的表面沉积透明导电层，所述黑色光刻胶层涂布于所述透明导电层上。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
其中，在所述衬底基板上涂布所述黑色光刻胶层之后，在所述黑色光刻胶层上涂布所述透明光刻胶层之前，预烘烤所述黑色光刻胶层，在所述黑色光刻胶层上涂布所述透明光刻胶层之后，预烘烤所述透明光刻胶层。
其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
本申请的有益效果如下：利用多色调掩膜板，通过一次黄光工艺，同时曝光黑色光刻胶层和透明光刻胶层工艺，形成间隔物(主间隔物和辅间隔物)及黑色矩阵(第一黑色矩阵和第二黑色矩阵)，减少了液晶显示器的制作工序，降低了生产成本，缩短了生产周期，且避免了间隔物与黑色矩阵分开制备时存在的对位误差，提高了产品良率。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的明显变形方式。
图1为本申请实施例提供的黑色矩阵与间隔物的制作方法的步骤S101的示意图。
图2为本申请实施例提供的黑色矩阵与间隔物的制作方法的步骤S102的示意图。
图3为本申请实施例提供的黑色矩阵与间隔物的制作方法的步骤S103的示意图。
图4为本申请实施例提供的多色调掩膜板的示意图。
图5为本申请实施例提供的黑色矩阵与间隔物的制作方法的步骤S104的示意图。
图6和图7为本申请实施例提供的黑色矩阵与间隔物的制作方法的一种实施方式的示意图。
图8为本申请实施例提供的上基板的一种实施方式的示意图。
图9为本申请实施例提供的下基板的一种实施方式的示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请一并参阅图1至图7，本申请实施例提供的黑色矩阵与间隔物的制作方法用于制作液晶显示设备内的黑色矩阵与间隔物。具体的，液晶显示设备包括手机、显示器、平板电脑等显示设备。本实施例中，液晶显示设备为采用COA(Color Filter on Array)技术的液晶显示设备，即将色阻层90的R(红)、G(绿)、B(蓝)色阻与薄膜晶体管80制作在同一个基板上，从而避免了两个基板之间的对位问题，降低了显示面板制备过程中液晶盒对组制程的难度，避免了液晶盒对组时的误差。具体的，本申请实施例提供的黑色矩阵与间隔物的制作方法步骤如下。
S101、提供衬底基板10，在衬底基板10上涂布黑色光刻胶层20。
本实施例中，COA型的显示面板包括两个透明基板，即上基板和下基板，上基板上制作公共电极，下基板上制作薄膜晶体管80、像素电极及色阻层90，本申请实施例提供的黑色矩阵与间隔物可以制作于上基板上，也可以制作于下基板上。
请参阅图1，衬底基板10为玻璃基板，其他实施方式中，衬底基板10也可以为塑料等其他透明材料制成的基板。本实施例中，衬底基板10表面平整，以有利于在衬底基板10的表面层叠各种层结构以形成相应的器件。
本实施例中，黑色光刻胶层20均匀的涂布在衬底基板10上，并经过预烘烤(Pre-bake)处理，以将涂布于衬底基板10上的黑色光刻胶层20内的大部分溶剂蒸发。一种实施方式中，还对进行操作的腔室进行抽真空，以使黑色光刻胶层20在低气压的环境和加热的同时作用下迅速蒸发大部分溶剂，一方面有利于后续对黑色光刻胶层20的曝光和显影操作，另一方面有利于后续在黑色光刻胶层20上涂布透明光刻胶层30，避免黑色光刻胶层20与透明光刻胶层30混合。
S102、在黑色光刻胶层20上涂布透明光刻胶层30。
请参阅图2，透明光刻胶层30均匀的涂布在黑色光刻胶层20上，并经过预烘烤(Pre-bake)处理，以将涂布于黑色光刻胶层20上的透明光刻胶层30内的大部分溶剂蒸发。一种实施方式中，还对进行操作的腔室进行抽真空，以使透明光刻胶层30在低气压的环境和加热的同时作用下迅速蒸发大部分溶剂，有利于后续对透明光刻胶层30的曝光和显影操作。
S103、采用多色调掩膜板40曝光透明光刻胶层30和黑色光刻胶层20。
请参阅图3，本实施例中，多色调掩膜板40(Multi-Tone Mask)为不同部位具有不同透光率的掩膜板，曝光透明光刻胶层30和黑色光刻胶层20时，将多色调掩膜板40放置于光源与透明光刻胶层30及黑色光刻胶层20之间，光源发出紫外光穿过多色调掩膜板40后照射到透明光刻胶层30和黑色光刻胶层20上，光源穿过多色调掩膜板40上透光率不同的位置时，照射到透明光刻胶层30和黑色光刻胶层20上的光强不同。具体的，当照射到透明光刻胶层30上的光线较强时，紫外光穿过透明光刻胶层30照射到黑色光刻胶层20上，使黑色光刻胶层20发生交联反应，紫外光还使透明光刻胶层30发生交联反应；当照射到透明光刻胶层30上的光线较弱时，紫外光穿过透明光刻胶层30照射到黑色光刻胶层20上，使黑色光刻胶层20发生交联反应，而透明光刻胶层30不发生交联反应或仅部分发生交联反应；当多色调掩膜板40完全遮挡紫外光时，透明光刻胶层30和黑色光刻胶层20都未被紫外光照射，换言之，透明光刻胶层30和黑色光刻胶层20都未发生交联反应。
请结合图4，本实施例中，多色调掩膜板40包括第一透光区42和第二透光区44，第一透光区42的透光率大于第二透光区44。请继续参阅图3，采用多色调掩膜板40曝光透明光刻胶层30和黑色光刻胶层20，透明光刻胶层30和黑色光 刻胶层20形成正对第一透光区42的第一部分32及正对第二透光区44的第二部分34。具体的，第一部分32的黑色光刻胶层20发生完全交联反应，第一部分32的透明光刻胶层30也发生完全交联反应，第二部分34的黑色光刻胶层20发生完全交联反应，第二部分34的透明光刻胶层30发生部分交联反应。本实施例中，多色调掩膜板40还包括非透光区，即透光率为零的区域，透明光刻胶层30和黑色光刻胶层20正对非透光区的部分形成剥离部分，剥离部分的透明光刻胶层30和黑色光刻胶层20未发生交联反应。
本实施例中，利用多色调掩膜板40的不同区域的透光率不同的特点，使透明光刻胶层30和黑色光刻胶层20的不同部分发生的交联反应的程度不同，以在后续显影过程后保留程度不同的透明光刻胶层30和黑色光刻胶层20。
S104、采用显影液处理透明光刻胶层30和黑色光刻胶层20。
请结合图5，采用显影液处理透明光刻胶层30和黑色光刻胶层20的方式为将带有透明光刻胶层30和黑色光刻胶层20的衬底基板10置于显影液体系中，并通过喷淋、浸泡等方面完成显影工艺。在显影液环境下，未发生交联反应的透明光刻胶层30和黑色光刻胶层20会被溶解，而发生了交联反应的透明光刻胶层30和黑色光刻胶层20不会被溶解，而保留在衬底基板10上。
本实施例中，第一部分32的透明光刻胶层30被保留而形成主间隔物62，第一部分32的黑色光刻胶层20被保留而形成第一黑色矩阵52，主间隔物62层叠于第一黑色矩阵52上。显影液部分溶解第二部分34的透明光刻胶层30，第二部分34剩余的透明光刻胶层30形成辅间隔物64，第二部分34的黑色光刻胶层20被保留而形成第二黑色矩阵54，主间隔物62层叠于第二黑色矩阵54上。第二部分34的透明光刻胶层30被溶解掉的部分即主间隔物62与辅间隔物64的高度差，通过控制多色调掩膜板40的第一透光区42与第二透光区44的透光率的差别可以控制主间隔物62与辅间隔物64的高度差。本实施例中，剥离部分的透明光刻胶层30和黑色光刻胶层20显影后被完全溶解。
请结合图4，一种实施方式中，第一透光区42包括全透光区402和第一半透光区404，全透光区402位于第一半透光区404内，采用多色调掩膜板40曝光透明光刻胶层30和黑色光刻胶层20并显影后，形成的主间隔物62在衬底基板10上的垂直投影位于第一黑色矩阵52的范围内。具体的，全透光区402的透光率 为100％，对应全透光区402的透明光刻胶层30和黑色光刻胶层20发生完全的交联反应，显影后被保留；对应第一半透光区404的黑色光刻胶层20发生完全的交联反应，显影后被保留，对应第一半透光区404的透明光刻胶层30未发生交联反应，显影后被溶解。结合图5，全透光区402位于第一半透光区404内，形成的主间隔物62在衬底基板10上的垂直投影位于第一黑色矩阵52的范围内，换言之，第一黑色矩阵52的尺寸大于主间隔物62，阶梯状的形状有利于主间隔物62稳定的堆叠在第一黑色矩阵52上，从而提高了液晶盒的稳定性。
请结合图4，一种实施方式中，第二透光区44包括第二半透光区406和第一半透光区404，第二半透光区406的透光率大于第一半透光区404，第二半透光区406位于第一半透光区404内，采用多色调掩膜板40曝光透明光刻胶层30和黑色光刻胶层20并显影后，形成的辅间隔物64在衬底基板10上的垂直投影位于第二黑色矩阵54的范围内。具体的，对应第二半透光区406的透明光刻胶层30和黑色光刻胶层20发生部分交联反应，黑色光刻胶层20显影后被保留，透明光刻胶层30显影后被部分保留；对应第一半透光区404的黑色光刻胶层20发生完全的交联反应，显影后被保留，对应第一半透光区404的透明光刻胶层30未发生交联反应，显影后被溶解。结合图5，第二半透光区406位于第一半透光区404内，形成的辅间隔物64在衬底基板10上的垂直投影位于第二黑色矩阵54的范围内，换言之，第二黑色矩阵54的尺寸大于辅间隔物64，阶梯状的形状有利于辅间隔物64稳定的堆叠在第二黑色矩阵54上，从而提高了液晶盒的稳定性。
利用多色调掩膜板40，通过一次黄光工艺，同时曝光黑色光刻胶层20和透明光刻胶层30工艺，形成间隔物(主间隔物62和辅间隔物64)及黑色矩阵(第一黑色矩阵52和第二黑色矩阵54)，减少了液晶显示器的制作工序，降低了生产成本，缩短了生产周期，且避免了间隔物与黑色矩阵分开制备时存在的对位误差，提高了产品良率。
请参阅图6，一种实施方式中，多色调掩膜板40还包括第三透光区46，第三透光区46与第一半透光区404的透光率相同，采用多色调掩膜板40曝光透明光刻胶层30和黑色光刻胶层20后，透明光刻胶层30和黑色光刻胶层20形成正对第三透光区46的第三部分36，结合图7，采用显影液处理透明光刻胶层30和黑色光刻胶层20后，显影液溶解第三部分36的透明光刻胶层30，第三部分36的黑 色光刻胶层20形成第三黑色矩阵56。具体的，对应第三透光区46的黑色光刻胶层20发生完全的交联反应，显影后被保留，对应第三透光区46的透明光刻胶层30未发生交联反应，显影后被溶解，换言之，第三部分36的透明光刻胶层30和黑色光刻胶层20曝光、显影后保留黑色光刻胶层20形成第三黑色矩阵56，第三黑色矩阵56用于放置扫描线和数据线漏光。
S104、烘烤。
本实施例中，烘烤曝光、显影后保留的透明光刻胶层30和黑色光刻胶层20，以固化保留的透明光刻胶层30和黑色光刻胶层20。
本实施例中，COA型的显示面板包括两个透明基板，即上基板和下基板，上基板上制作公共电极，下基板上制作薄膜晶体管80、像素电极及色阻层90，本申请实施例提供的黑色矩阵与间隔物可以制作于上基板上，也可以制作于下基板上。
一种实施方式中，请参阅图8，当黑色矩阵与间隔物制作于上基板上时，在衬底基板10上涂布黑色光刻胶层20之前，在衬底基板10的表面沉积透明导电层70，黑色光刻胶层20涂布于透明导电层70上。一种实施方式中，透明导电层70为通过化学气相沉积或物理气相沉积形成于衬底基板10上氧化铟锡(Indium tin oxide，ITO)，透明导电层70的透光率高，且导电性能好。透明导电层70用于形成公共电极，在上基板和下基板对位成盒后，上基板的公共电极与下基板的像素电极之间的电压差驱动液晶偏转。黑色矩阵与间隔物制作于上基板上的方式简单，制程少，产品良率高。
一种实施方式中，请参阅图9，当黑色矩阵与间隔物制作于下基板上时，在衬底基板10上涂布黑色光刻胶层20之前，在衬底基板10的表面形成薄膜晶体管80，黑色光刻胶层20涂布于薄膜晶体管80上。具体的，薄膜晶体管80包括依次层叠设置的栅极82、栅极绝缘层84、有源层810、源极86、漏极88等。一种实施方式中，在衬底基板10的表面形成薄膜晶体管80之后，在薄膜晶体管80上形成色阻层90，黑色光刻胶层20涂布于色阻层90上。黑色矩阵与间隔物制作于下基板上，有利于减小下基板与上基板的对位难度，从而提高对位精度，提高产品良率。
利用多色调掩膜板40，通过一次黄光工艺，同时曝光黑色光刻胶层20和透 明光刻胶层30工艺，形成间隔物(主间隔物62和辅间隔物64)及黑色矩阵(第一黑色矩阵52和第二黑色矩阵54)，减少了液晶显示器的制作工序，降低了生产成本，缩短了生产周期，且避免了间隔物与黑色矩阵分开制备时存在的对位误差，提高了产品良率。
以上所揭露的仅为本申请几种较佳实施例而已，当然不能以此来限定本申请之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本申请权利要求所作的等同变化，仍属于申请所涵盖的范围。

Claims (18)

  1. 一种黑色矩阵与间隔物的制作方法，其中，包括：
    提供衬底基板，在所述衬底基板上涂布黑色光刻胶层；
    在所述黑色光刻胶层上涂布透明光刻胶层；
    提供多色调掩膜板，所述多色调掩膜板包括第一透光区和第二透光区，所述第一透光区的透光率大于所述第二透光区的透光率，所述透明光刻胶层和所述黑色光刻胶层包括正对所述第一透光区的第一部分及正对所述第二透光区的第二部分，采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层，所述第一部分的所述透明光刻胶层用于形成主间隔物，所述第一部分的所述黑色光刻胶层用于形成第一黑色矩阵，所述主间隔物层叠于所述第一黑色矩阵上，所述第二部分所述透明光刻胶层用于形成辅间隔物，所述第二部分的所述黑色光刻胶层用于形成第二黑色矩阵，所述主间隔物层叠于所述第二黑色矩阵上。
  2. 根据权利要求1所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  3. 根据权利要求1所述的黑色矩阵与间隔物的制作方法，其中，利用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层后，所述方法还包括，采用显影液处理所述透明光刻胶层和所述黑色光刻胶层，所述第一部分的所述透明光刻胶层保留并形成所述主间隔物，所述第一部分的所述黑色光刻胶层保留并形成所述第一黑色矩阵，所述显影液部分溶解所述第二部分的所述透明光刻胶层，所述第二部分剩余的所述透明光刻胶层保留并形成所述辅间隔物，所述第二部分的所述黑色光刻胶层保留并形成所述第二黑色矩阵。
  4. 根据权利要求3所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  5. 根据权利要求1所述的黑色矩阵与间隔物的制作方法，其中，所述第一透光区包括全透光区和第一半透光区，所述全透光区位于所述第一半透光区内， 采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层并显影后，形成的所述主间隔物在所述衬底基板上的垂直投影位于所述第一黑色矩阵的范围内。
  6. 根据权利要求5所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  7. 根据权利要求5所述的黑色矩阵与间隔物的制作方法，其中，所述第二透光区包括第二半透光区和所述第一半透光区，所述第二半透光区的透光率大于所述第一半透光区的透光率，所述第二半透光区位于所述第一半透光区内，采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层并显影后，形成的所述辅间隔物在所述衬底基板上的垂直投影位于所述第二黑色矩阵的范围内。
  8. 根据权利要求7所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  9. 根据权利要求7所述的黑色矩阵与间隔物的制作方法，其中，所述多色调掩膜板还包括第三透光区，所述第三透光区与所述第一半透光区的透光率相同，采用所述多色调掩膜板曝光所述透明光刻胶层和所述黑色光刻胶层后，所述透明光刻胶层和所述黑色光刻胶层包括正对所述第三透光区的第三部分，在采用显影液处理所述透明光刻胶层和所述黑色光刻胶层后，所述显影液溶解所述第三部分的所述透明光刻胶层，所述第三部分的所述黑色光刻胶层保留并形成所述第三黑色矩阵。
  10. 根据权利要求9所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  11. 根据权利要求1所述的黑色矩阵与间隔物的制作方法，其中，在所述衬底基板上涂布所述黑色光刻胶层之前，在所述衬底基板的表面形成薄膜晶体管，所述黑色光刻胶层涂布于所述薄膜晶体管上。
  12. 根据权利要求11所述的黑色矩阵与间隔物的制作方法，其中，形成所 述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  13. 根据权利要求11所述的黑色矩阵与间隔物的制作方法，其中，在所述衬底基板的表面形成所述薄膜晶体管之后，在所述薄膜晶体管上形成色阻层，所述黑色光刻胶层涂布于所述色阻层上。
  14. 根据权利要求13所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  15. 根据权利要求1所述的黑色矩阵与间隔物的制作方法，其中，在所述衬底基板上涂布所述黑色光刻胶层之前，在所述衬底基板的表面沉积透明导电层，所述黑色光刻胶层涂布于所述透明导电层上。
  16. 根据权利要求15所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
  17. 根据权利要求1所述的黑色矩阵与间隔物的制作方法，其中，在所述衬底基板上涂布所述黑色光刻胶层之后，在所述黑色光刻胶层上涂布所述透明光刻胶层之前，预烘烤所述黑色光刻胶层，在所述黑色光刻胶层上涂布所述透明光刻胶层之后，预烘烤所述透明光刻胶层。
  18. 根据权利要求17所述的黑色矩阵与间隔物的制作方法，其中，形成所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物后，烘烤所述第一黑色矩阵、所述第二黑色矩阵、所述主间隔物及所述辅间隔物。
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