WO2020244086A1 - 一种基板以及显示装置 - Google Patents

一种基板以及显示装置 Download PDF

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Publication number
WO2020244086A1
WO2020244086A1 PCT/CN2019/105323 CN2019105323W WO2020244086A1 WO 2020244086 A1 WO2020244086 A1 WO 2020244086A1 CN 2019105323 W CN2019105323 W CN 2019105323W WO 2020244086 A1 WO2020244086 A1 WO 2020244086A1
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Prior art keywords
film layer
layer
substrate
film
display device
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Ceased
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PCT/CN2019/105323
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English (en)
French (fr)
Inventor
黄远科
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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Application filed by TCL China Star Optoelectronics Technology Co Ltd filed Critical TCL China Star Optoelectronics Technology Co Ltd
Priority to US16/618,403 priority Critical patent/US11887992B2/en
Publication of WO2020244086A1 publication Critical patent/WO2020244086A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices

Definitions

  • This application relates to the field of display technology, and in particular to a substrate and a display device.
  • the display device is composed of a substrate, and the substrate is formed by stacking film layers.
  • the existing substrate includes a stacked first film layer M1 and a second film layer M2. Both the first film layer M1 and the second film layer M2 are formed on the third film layer M3.
  • the first film layer M1 The edge of the film layer in contact with the second film layer M2 is a plane; because the film shrinkage of different materials is inconsistent, so at the overlap of different film layers, the first film layer M1 will produce stress cracking and the second film layer M2,
  • the first film layer M1 is made of organic materials
  • the second film layer M2 is made of inorganic materials (such as copper, etc.), which has a greater tensile cracking effect, resulting in undesirable phenomena such as disconnection in the pattern of the second film layer M2.
  • the film layer arrangement method of the existing substrate is likely to cause film layer cracking, which needs to be improved.
  • the present application provides a substrate and a display device to alleviate the technical problem that the existing substrate film layer arrangement method is likely to cause film layer cracking.
  • An embodiment of the present application provides a substrate, which includes:
  • the first film layer is formed on the third film layer and patterned to form a target pattern
  • the second film layer is formed on the third film layer and the first film layer, and the second film layer is stacked with the first film layer in the setting area of the target pattern;
  • the film shrinkage rate of the second film layer is less than the film shrinkage rate of the first film layer, and in the setting area of the target pattern, the film layer edge of the first film layer is formed with a surface facing the first film layer.
  • the first film layer has the protrusion structure formed on the edge of the film layer where the second film layer is stacked.
  • the first film layer in a setting area of a target pattern, is formed with at least three protrusion structures.
  • the distance between adjacent protrusion structures is greater than three times the width of the protrusion structure.
  • the cross section of the protruding structure is at least one of a rectangle, a trapezoid, and an arc.
  • the material of the first film layer is an organic material
  • the material of the second film layer is an inorganic material
  • the substrate is a color filter substrate
  • the first film layer is a color filter layer and/or an organic planarization layer
  • the second film layer is a transparent common electrode layer.
  • the substrate is an array substrate
  • the first film layer is a color filter layer
  • the second film layer is a metal layer.
  • the first film layer is patterned to form via holes or grooves.
  • the substrate is an array substrate
  • the first film layer is an organic polymer material layer
  • the second film layer is a transparent common electrode layer.
  • An embodiment of the present application provides a display device, which includes a display panel, and a substrate of the display panel includes:
  • the first film layer is formed on the third film layer and patterned to form a target pattern
  • the second film layer is formed on the third film layer and the first film layer, and the second film layer is stacked with the first film layer in the setting area of the target pattern;
  • the film shrinkage rate of the second film layer is less than the film shrinkage rate of the first film layer, and in the setting area of the target pattern, the film layer edge of the first film layer is formed with a surface facing the first film layer.
  • the first film layer has the protrusion structure formed on the edge of the film layer on which the second film layer is stacked.
  • the first film layer in a setting area of a target pattern, is formed with at least three protrusion structures.
  • the distance between adjacent protrusion structures is greater than three times the width of the protrusion structure.
  • the cross section of the protruding structure is at least one of a rectangle, a trapezoid, and an arc.
  • the material of the first film layer is an organic material
  • the material of the second film layer is an inorganic material
  • the substrate is a color filter substrate
  • the first film layer is a color filter layer and/or an organic planarization layer
  • the second film layer is a transparent common electrode layer.
  • the substrate is an array substrate
  • the first film layer is a color filter layer
  • the second film layer is a metal layer.
  • the first film layer is patterned to form via holes or grooves.
  • the substrate is an array substrate
  • the first film layer is an organic polymer material layer
  • the second film layer is a transparent common electrode layer.
  • the present application provides a substrate and a display device.
  • the substrate includes: a first film layer, a second film layer, and a third film layer; the first film layer is formed on the third film layer and is patterned to form a target pattern; The film layer is formed on the third film layer and the first film layer.
  • the second film layer is stacked with the first film layer; the film shrinkage rate of the second film layer is less than that of the first film layer.
  • the film shrinkage rate, in the setting area of the target pattern the edge of the first film layer is formed with a protrusion structure facing the second film layer; based on the protrusion structure, the substrate provided in this application increases the first film layer and the second film layer.
  • the deformation margin of the second film layer at the stacking position improves the tensile force between the two film layers, prevents the pattern of the second film layer from being pulled to produce cracks, can also prevent the cracks from extending, and eases the existing substrate film layer setting method
  • the existence of technical problems that easily lead to film tearing provides the stability of product performance.
  • Fig. 1 is a schematic diagram of the film layer arrangement of a conventional substrate.
  • FIG. 2 is a schematic diagram of the first structure of a substrate provided by an embodiment of the application.
  • FIG. 3 is a schematic diagram of a second structure of a substrate provided by an embodiment of the application.
  • FIG. 4 is a schematic diagram of a third structure of a substrate provided by an embodiment of the application.
  • 5 to 8 are schematic diagrams of preparing the substrate provided by the embodiment of the application.
  • the embodiment of the present application can alleviate the technical problem that the existing substrate film layer arrangement method is likely to cause film layer cracking.
  • the substrate 2 provided by the present application includes:
  • the first film layer 21 is formed on the third film layer 25 and patterned to form a target pattern 23;
  • the second film layer 22 is formed on the third film layer 25 and the first film layer 21.
  • the second film layer 22 and the first film layer Layer 21 is stacked;
  • the film shrinkage rate of the second film layer 22 is less than the film shrinkage rate of the first film layer 21, and in the setting area of the target pattern 23, the film layer edge of the first film layer 21 is formed with Facing the protrusion structure 24 of the second film layer 22.
  • the film shrinkage rate refers to the rate of change of the film layer per unit volume under specific environmental conditions. Generally, the film shrinkage rate of the organic material film layer is much greater than the film shrinkage rate of the inorganic material film layer.
  • This embodiment provides a substrate, which includes: a first film layer, a second film layer, and a third film layer; the first film layer is formed on the third film layer and patterned to form a target pattern; the second film layer Formed on the third film layer and the first film layer, in the setting area of the target pattern, the second film layer is stacked with the first film layer; the film shrinkage rate of the second film layer is smaller than that of the first film layer In the setting area of the target pattern, the edge of the film layer of the first film layer is formed with a protrusion structure facing the second film layer; based on the protrusion structure, the substrate provided by this application increases the size of the first film layer and the second film layer.
  • the deformation margin of the layer at the stacking position improves the tensile force between the two film layers, prevents the pattern of the second film layer from being pulled to produce cracks, can also prevent the cracks from extending, and alleviate the existing substrate film setting methods.
  • the technical problems that easily lead to film tearing provide the stability of product performance.
  • the first film layer 21 has the protrusion structure 24 formed on the edge of the film layer on which the second film layer 22 is stacked.
  • the first film layer 21 has the protrusion structure 24 formed on the edge of the film layer on which the second film layer 22 is stacked.
  • the first film layer 21 is formed with at least three protruding structures 24.
  • the first film layer 21 is formed with at least three protruding structures 24.
  • the distance L between adjacent protrusion structures is greater than three times the width D of the protrusion structure, that is, L is greater than 3D to enhance the effect.
  • the cross section of the protruding structure 24 is at least one of a rectangle, a trapezoid, and an arc.
  • the material of the first film layer is an organic material
  • the material of the second film layer is an inorganic material
  • the substrate 2 is a color filter substrate
  • the first film layer 21 is a color filter layer
  • the second film layer 22 is a transparent common electrode layer.
  • the substrate 2 is a color filter substrate
  • the first film layer 21 is an organic planarization layer
  • the second film layer 22 is a transparent common electrode layer.
  • the substrate 2 is an array substrate
  • the first film layer 21 is a color filter layer
  • the second film layer 22 is a metal layer.
  • the array substrate is an array substrate with a color filter layer disposed on the array substrate.
  • the first film layer 21 is patterned to form vias or grooves.
  • the substrate 2 is an array substrate
  • the first film layer 21 is an organic polymer material layer, such as a material layer such as PFA
  • the second film layer 22 is a transparent common electrode layer.
  • the material of the transparent common electrode layer may be indium tin oxide, indium zinc oxide, aluminum zinc oxide, or the like.
  • the material of the metal layer may be a copper-molybdenum laminate, a copper-molybdenum-titanium laminate, a copper-titanium laminate, an aluminum-molybdenum laminate, a copper-niobium alloy, a nickel-chromium alloy, and the like.
  • an embodiment of the present application also provides a substrate preparation method, which includes the following steps:
  • a substrate 601 is provided.
  • the substrate 601 may be a glass substrate, a rigid substrate, etc., and is subjected to processing such as cleaning.
  • the third film layer 25 and the first film layer 21 are formed on the substrate 601.
  • the third film layer 25 may be a flexible substrate, a buffer layer, a planarization layer, an insulating layer, a boundary layer, and the like.
  • the material of the first film layer 21 is an organic material, which may be a color film layer or an organic planarization layer of a color film substrate, a color film layer or an organic polymer material layer of an array substrate.
  • the first film layer 21 is subjected to photolithography processing.
  • the first film layer 21 is lithographically processed by ultraviolet light or other light to form target patterns such as vias and grooves, and the protrusion structure 24 is formed in the setting area of the target pattern .
  • this step is: forming the protrusion structure on the edge of the first film layer 21 on which the second film layer is stacked.
  • the first film layer forms at least three protruding structures in a setting area of a target pattern.
  • the distance between adjacent protrusion structures is greater than three times the width of the protrusion structure.
  • the cross section of the protruding structure is at least one of a rectangle, a trapezoid, and an arc.
  • a second film layer 22 is formed on the first film layer 21 and the third film layer 23.
  • the material of the second film layer 22 is an inorganic material, and may be a transparent common electrode layer of a color filter substrate, a metal layer of an array substrate, a transparent common electrode layer, and the like.
  • the second film layer 22 is patterned to form a corresponding pattern.
  • the second film layer 22 is patterned to form at least one pattern corresponding to the pixel electrode, the source electrode, the drain electrode, the gate electrode, and the signal line.
  • the substrate 601 is removed, and the substrate shown in FIG. 2 is obtained.
  • the substrate of the display panel includes:
  • the first film layer is formed on the third film layer and patterned to form a target pattern
  • the second film layer is formed on the third film layer and the first film layer, and the second film layer is stacked with the first film layer in the setting area of the target pattern;
  • the film shrinkage rate of the second film layer is less than the film shrinkage rate of the first film layer, and in the setting area of the target pattern, the film layer edge of the first film layer is formed with a surface facing the first film layer.
  • the first film layer has the protrusion structure formed on the edge of the film layer on which the second film layer is stacked.
  • the first film layer in a setting area of a target pattern, is formed with at least three protrusion structures.
  • the distance between adjacent protrusion structures is greater than three times the width of the protrusion structure.
  • the cross section of the protruding structure is at least one of a rectangle, a trapezoid, and an arc.
  • the material of the first film layer is an organic material
  • the material of the second film layer is an inorganic material
  • the substrate is a color filter substrate
  • the first film layer is a color film layer and/or an organic planarization layer
  • the second film layer It is a transparent common electrode layer.
  • the substrate is an array substrate
  • the first film layer is a color film layer
  • the second film layer is a metal layer.
  • the first film layer is patterned to form via holes or grooves.
  • the substrate is an array substrate
  • the first film layer is an organic polymer material layer
  • the second film layer is a transparent common electrode layer.
  • the present application provides a display device, the display device includes a display panel, and the substrate of the display panel includes:
  • the first film layer is formed on the third film layer and patterned to form a target pattern
  • the second film layer is formed on the third film layer and the first film layer, and the second film layer is stacked with the first film layer in the setting area of the target pattern;
  • the film shrinkage rate of the second film layer is less than the film shrinkage rate of the first film layer, and in the setting area of the target pattern, the film layer edge of the first film layer is formed with a surface facing the first film layer.
  • the first film layer has the protrusion structure formed on the edge of the film layer where the second film layer is stacked.
  • the first film layer in a setting area of a target pattern, is formed with at least three protrusion structures.
  • the distance between adjacent protrusion structures is greater than three times the width of the protrusion structure.
  • the cross section of the protruding structure is at least one of a rectangle, a trapezoid, and an arc.
  • the material of the first film layer is an organic material
  • the material of the second film layer is an inorganic material
  • the substrate is a color filter substrate
  • the first film layer is a color filter layer and/or an organic planarization layer
  • the second film layer It is a transparent common electrode layer.
  • the substrate is an array substrate
  • the first film layer is a color film layer
  • the second film layer is a metal layer.
  • the first film layer is patterned to form a via hole or a groove.
  • the substrate is an array substrate
  • the first film layer is an organic polymer material layer
  • the second film layer is a transparent common electrode layer.
  • the present application provides a substrate and a display device.
  • the substrate includes: a first film layer, a second film layer, and a third film layer; the first film layer is formed on the third film layer and is patterned to form a target pattern; The film layer is formed on the third film layer and the first film layer.
  • the second film layer is stacked with the first film layer; the film shrinkage rate of the second film layer is less than that of the first film layer.
  • the film shrinkage rate, in the setting area of the target pattern the edge of the first film layer is formed with a protrusion structure facing the second film layer; based on the protrusion structure, the substrate provided in this application increases the first film layer and the second film layer.
  • the deformation margin of the second film layer at the stacking position improves the tensile force between the two film layers, prevents the pattern of the second film layer from being pulled to produce cracks, can also prevent the cracks from extending, and eases the existing substrate film layer setting method
  • the existence of technical problems that easily lead to film tearing provides the stability of product performance.

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  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)

Abstract

一种基板以及显示装置,该基板(2)的第一膜层(21)形成在第三膜层(25)上,并图案化形成目标图案(23),第二膜层(22)形成在第三膜层(25)和第一膜层(21)上,在目标图案(23)的设置区域内,第一膜层(21)的膜层边缘形成有朝向第二膜层(22)的突起结构(24);基于该突起结构(24),增大了第一膜层(21)和第二膜层(22)在堆叠位置的形变余地,防止了第二膜层(22)的图形被拉裂产生裂痕。

Description

一种基板以及显示装置 技术领域
本申请涉及显示技术领域,尤其涉及一种基板以及显示装置。
背景技术
显示装置是由基板组成的,而基板则是由膜层堆叠形成的。
如图1所示,现有基板包括堆叠的第一膜层M1和第二膜层M2,第一膜层M1和第二膜层M2都形成在第三膜层M3上,第一膜层M1和第二膜层M2接触的膜层边缘是一个平面;因不同材料的膜缩率不一致,这样在不同膜层的搭接处,第一膜层M1会产生应力拉裂第二膜层M2,尤其是第一膜层M1为有机材料,而第二膜层M2为无机材料(如铜等),拉裂作用更大,导致第二膜层M2的图案出现断线等不良现象。
因此,现有基板的膜层设置方式容易导致膜层拉裂,需要改进。
技术问题
本申请提供一种基板以及显示装置,以缓解现有基板膜层设置方式存在的容易导致膜层拉裂的技术问题。
技术解决方案
为解决上述问题,本申请提供的技术方案如下:
本申请实施例提供一种基板,其包括:
第一膜层;
第二膜层;
第三膜层;
所述第一膜层形成在所述第三膜层上,并图案化形成目标图案;
所述第二膜层形成在所述第三膜层和所述第一膜层上,在所述目标图案的设置区域内,所述第二膜层与所述第一膜层堆叠;
其中,所述第二膜层的膜收缩率小于所述第一膜层的膜收缩率,在所述目标图案的设置区域内,所述第一膜层的膜层边缘形成有朝向所述第二膜层的突起结构。
在本申请实施例提供的基板中,所述第一膜层在堆叠所述第二膜层的膜层边缘上,都形成有所述突起结构。
在本申请实施例提供的基板中,在一个目标图案的设置区域内,所述第一膜层形成有至少三个突起结构。
在本申请实施例提供的基板中,相邻突起结构之间的距离,大于所述突起结构宽度的三倍。
在本申请实施例提供的基板中,所述突起结构的截面为矩形、梯形、弧形中的至少一种。
在本申请实施例提供的基板中,所述第一膜层的材料为有机材料,所述第二膜层的材料为无机材料。
在本申请实施例提供的基板中,所述基板为彩膜基板,所述第一膜层为彩膜层和/或有机平坦化层,所述第二膜层为透明公共电极层。
在本申请实施例提供的基板中,所述基板为阵列基板,所述第一膜层为彩膜层,所述第二膜层为金属层。
在本申请实施例提供的基板中,所述第一膜层图案化形成过孔或者凹槽。
在本申请实施例提供的基板中,所述基板为阵列基板,所述第一膜层为有机高分子材料层,所述第二膜层为透明公共电极层。
本申请实施例提供一种显示装置,其包括显示面板,所述显示面板的基板包括:
第一膜层;
第二膜层;
第三膜层;
所述第一膜层形成在所述第三膜层上,并图案化形成目标图案;
所述第二膜层形成在所述第三膜层和所述第一膜层上,在所述目标图案的设置区域内,所述第二膜层与所述第一膜层堆叠;
其中,所述第二膜层的膜收缩率小于所述第一膜层的膜收缩率,在所述目标图案的设置区域内,所述第一膜层的膜层边缘形成有朝向所述第二膜层的突起结构。
在本申请实施例提供的显示装置中,所述第一膜层在堆叠所述第二膜层的膜层边缘上,都形成有所述突起结构。
在本申请实施例提供的显示装置中,在一个目标图案的设置区域内,所述第一膜层形成有至少三个突起结构。
在本申请实施例提供的显示装置中,相邻突起结构之间的距离,大于所述突起结构宽度的三倍。
在本申请实施例提供的显示装置中,所述突起结构的截面为矩形、梯形、弧形中的至少一种。
在本申请实施例提供的显示装置中,所述第一膜层的材料为有机材料,所述第二膜层的材料为无机材料。
在本申请实施例提供的显示装置中,所述基板为彩膜基板,所述第一膜层为彩膜层和/或有机平坦化层,所述第二膜层为透明公共电极层。
在本申请实施例提供的显示装置中,所述基板为阵列基板,所述第一膜层为彩膜层,所述第二膜层为金属层。
在本申请实施例提供的显示装置中,所述第一膜层图案化形成过孔或者凹槽。
在本申请实施例提供的显示装置中,所述基板为阵列基板,所述第一膜层为有机高分子材料层,所述第二膜层为透明公共电极层。
有益效果
本申请提供一种基板以及显示装置,该基板包括:第一膜层、第二膜层、第三膜层;第一膜层形成在第三膜层上,并图案化形成目标图案,第二膜层形成在第三膜层和所述第一膜层上,在目标图案的设置区域内,第二膜层与第一膜层堆叠;第二膜层的膜收缩率小于第一膜层的膜收缩率,在目标图案的设置区域内,第一膜层的膜层边缘形成有朝向第二膜层的突起结构;基于该突起结构,本申请提供的基板增大了第一膜层和第二膜层在堆叠位置的形变余地,改善了两个膜层之间的拉力,防止了第二膜层的图形被拉裂产生裂痕,也可以防止裂痕延伸,缓解了现有基板膜层设置方式存在的容易导致膜层拉裂的技术问题,提供了产品性能的稳定性。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有基板的膜层设置示意图。
图2为本申请实施例提供的基板的第一种结构示意图。
图3为本申请实施例提供的基板的第二种结构示意图。
图4为本申请实施例提供的基板的第三种结构示意图。
图5至图8为本申请实施例提供的基板的制备示意图。
本发明的实施方式
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。
针对现有基板膜层设置方式存在的容易导致膜层拉裂的技术问题,本申请实施例可以缓解。
如图2所示,本申请提供的基板2包括:
第一膜层21;
第二膜层22;
第三膜层25;
所述第一膜层21形成在所述第三膜层25上,并图案化形成目标图案23;
所述第二膜层22形成在所述第三膜层25和所述第一膜层21上,在所述目标图案23的设置区域内,所述第二膜层22与所述第一膜层21堆叠;
其中,所述第二膜层22的膜收缩率小于所述第一膜层21的膜收缩率,在所述目标图案23的设置区域内,所述第一膜层21的膜层边缘形成有朝向所述第二膜层22的突起结构24。
膜收缩率是指膜层在特定环境条件下,单位体积的膜层的变化率,一般有机材料膜层的膜收缩率,远大于无机材料膜层的膜收缩率。
本实施例提供了一种基板,其包括:第一膜层、第二膜层、第三膜层;第一膜层形成在第三膜层上,并图案化形成目标图案,第二膜层形成在第三膜层和所述第一膜层上,在目标图案的设置区域内,第二膜层与第一膜层堆叠;第二膜层的膜收缩率小于第一膜层的膜收缩率,在目标图案的设置区域内,第一膜层的膜层边缘形成有朝向第二膜层的突起结构;基于该突起结构,本申请提供的基板增大了第一膜层和第二膜层在堆叠位置的形变余地,改善了两个膜层之间的拉力,防止了第二膜层的图形被拉裂产生裂痕,也可以防止裂痕延伸,缓解了现有基板膜层设置方式存在的容易导致膜层拉裂的技术问题,提供了产品性能的稳定性。
在一种实施例中,如图3所示,所述第一膜层21在堆叠所述第二膜层22的膜层边缘上,都形成有所述突起结构24。该方式在制备第一膜层21时,仅需使用常规的光刻工艺即可,不需要使用第二膜层22对应的掩模板。
在一种实施例中,如图2所示,在一个目标图案23的设置区域内,所述第一膜层21形成有至少三个突起结构24,本实施例通过设置至少三个突起结构,使得效果更好。
在一种实施例中,如图2所示,相邻突起结构之间的距离L,大于所述突起结构宽度D的三倍,即L大于3D,以增强效果。
在一种实施例中,如图2至图4所示,所述突起结构24的截面为矩形、梯形、弧形中的至少一种。
在一种实施例中,所述第一膜层的材料为有机材料,所述第二膜层的材料为无机材料。
在一种实施例中,所述基板2为彩膜基板,所述第一膜层21为彩膜层,所述第二膜层22为透明公共电极层。
在一种实施例中,所述基板2为彩膜基板,所述第一膜层21为有机平坦化层,所述第二膜层22为透明公共电极层。
在一种实施例中,所述基板2为阵列基板,所述第一膜层21为彩膜层,所述第二膜层22为金属层。在本实施例中,阵列基板为彩膜层设置在阵列基板上的阵列基板。
在一种实施例中,所述第一膜层21图案化形成过孔或者凹槽。
在一种实施例中,所述基板2为阵列基板,所述第一膜层21为有机高分子材料层,如PFA等材料层,所述第二膜层22为透明公共电极层。
在一种实施例中,透明公共电极层的材料可以为氧化铟锡、氧化铟锌、氧化铝锌等。
在一种实施例中,金属层的材料可以是铜钼叠层、铜钼钛叠层、铜钛叠层,铝钼叠层,铜铌合金、镍铬合金等。
为了制备得到图2所示的基板,本申请实施例也提供了一种基板制备方法,其包括以下步骤:
如图5所示,提供一衬底601。
衬底601可以是玻璃基板、硬质基板等,并进行清洗等处理。
如图6所示,在衬底601上形成第三膜层25以及第一膜层21。
第三膜层25可以是柔性衬底、缓冲层、平坦化层、绝缘层、有缘层等。
第一膜层21的材料为有机材料,可以为彩膜基板的彩膜层或有机平坦化层,阵列基板的彩膜层或者有机高分子材料层。
如图7所示,对第一膜层21进行光刻处理。
使用目标图案以及突起结构对应的掩模板602,通过紫外光等光线对第一膜层21进行光刻处理,形成过孔、凹槽等目标图案,并在目标图案的设置区域内形成突起结构24。
在一种实施例中,本步骤为:在所述第一膜层21在堆叠所述第二膜层的膜层边缘上,都形成有所述突起结构。
在一种实施例中,在一个目标图案的设置区域内,所述第一膜层形成至少三个突起结构。
在一种实施例中,相邻突起结构之间的距离,大于所述突起结构宽度的三倍。
在一种实施例中,所述突起结构的截面为矩形、梯形、弧形中的至少一种。
如图8所示,在第一膜层21和第三膜层23上形成第二膜层22。
第二膜层22的材料为无机材料,可以为彩膜基板的透明公共电极层、阵列基板的金属层以及透明公共电极层等。
之后,对第二膜层22进行图案化处理,形成对应图案。
使用第二膜层22对应的掩模板2,对第二膜层22进行图案化处理,形成像素电极、源极、漏极、栅极、信号线中的至少一种对应图案。
最后,去除衬底601,得到如图2所示的基板。
同时,本申请提供了一种显示面板,该显示面板的基板包括:
第一膜层;
第二膜层;
第三膜层;
所述第一膜层形成在所述第三膜层上,并图案化形成目标图案;
所述第二膜层形成在所述第三膜层和所述第一膜层上,在所述目标图案的设置区域内,所述第二膜层与所述第一膜层堆叠;
其中,所述第二膜层的膜收缩率小于所述第一膜层的膜收缩率,在所述目标图案的设置区域内,所述第一膜层的膜层边缘形成有朝向所述第二膜层的突起结构。
在一种实施例中,在本申请实施例提供的显示面板中,所述第一膜层在堆叠所述第二膜层的膜层边缘上,都形成有所述突起结构。
在一种实施例中,在本申请实施例提供的显示面板中,在一个目标图案的设置区域内,所述第一膜层形成有至少三个突起结构。
在一种实施例中,在本申请实施例提供的显示面板中,相邻突起结构之间的距离,大于所述突起结构宽度的三倍。
在一种实施例中,在本申请实施例提供的显示面板中,所述突起结构的截面为矩形、梯形、弧形中的至少一种。
在一种实施例中,在本申请实施例提供的显示面板中,所述第一膜层的材料为有机材料,所述第二膜层的材料为无机材料。
在一种实施例中,在本申请实施例提供的显示面板中,所述基板为彩膜基板,所述第一膜层为彩膜层和/或有机平坦化层,所述第二膜层为透明公共电极层。
在一种实施例中,在本申请实施例提供的显示面板中,所述基板为阵列基板,所述第一膜层为彩膜层,所述第二膜层为金属层。
在一种实施例中,在本申请实施例提供的显示面板中,所述第一膜层图案化形成过孔或者凹槽。
在一种实施例中,在本申请实施例提供的显示面板中,所述基板为阵列基板,所述第一膜层为有机高分子材料层,所述第二膜层为透明公共电极层。
同时,本申请提供了一种显示装置,该显示装置包括显示面板,该显示面板的基板包括:
第一膜层;
第二膜层;
第三膜层;
所述第一膜层形成在所述第三膜层上,并图案化形成目标图案;
所述第二膜层形成在所述第三膜层和所述第一膜层上,在所述目标图案的设置区域内,所述第二膜层与所述第一膜层堆叠;
其中,所述第二膜层的膜收缩率小于所述第一膜层的膜收缩率,在所述目标图案的设置区域内,所述第一膜层的膜层边缘形成有朝向所述第二膜层的突起结构。
在一种实施例中,在本申请实施例提供的显示装置中,所述第一膜层在堆叠所述第二膜层的膜层边缘上,都形成有所述突起结构。
在一种实施例中,在本申请实施例提供的显示装置中,在一个目标图案的设置区域内,所述第一膜层形成有至少三个突起结构。
在一种实施例中,在本申请实施例提供的显示装置中,相邻突起结构之间的距离,大于所述突起结构宽度的三倍。
在一种实施例中,在本申请实施例提供的显示装置中,所述突起结构的截面为矩形、梯形、弧形中的至少一种。
在一种实施例中,在本申请实施例提供的显示装置中,所述第一膜层的材料为有机材料,所述第二膜层的材料为无机材料。
在一种实施例中,在本申请实施例提供的显示装置中,所述基板为彩膜基板,所述第一膜层为彩膜层和/或有机平坦化层,所述第二膜层为透明公共电极层。
在一种实施例中,在本申请实施例提供的显示装置中,所述基板为阵列基板,所述第一膜层为彩膜层,所述第二膜层为金属层。
在一种实施例中,在本申请实施例提供的显示装置中,所述第一膜层图案化形成过孔或者凹槽。
在一种实施例中,在本申请实施例提供的显示装置中,所述基板为阵列基板,所述第一膜层为有机高分子材料层,所述第二膜层为透明公共电极层。
根据上述实施例可知:
本申请提供一种基板以及显示装置,该基板包括:第一膜层、第二膜层、第三膜层;第一膜层形成在第三膜层上,并图案化形成目标图案,第二膜层形成在第三膜层和所述第一膜层上,在目标图案的设置区域内,第二膜层与第一膜层堆叠;第二膜层的膜收缩率小于第一膜层的膜收缩率,在目标图案的设置区域内,第一膜层的膜层边缘形成有朝向第二膜层的突起结构;基于该突起结构,本申请提供的基板增大了第一膜层和第二膜层在堆叠位置的形变余地,改善了两个膜层之间的拉力,防止了第二膜层的图形被拉裂产生裂痕,也可以防止裂痕延伸,缓解了现有基板膜层设置方式存在的容易导致膜层拉裂的技术问题,提供了产品性能的稳定性。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种基板,其包括:
    第一膜层;
    第二膜层;
    第三膜层;
    所述第一膜层形成在所述第三膜层上,并图案化形成目标图案;
    所述第二膜层形成在所述第三膜层和所述第一膜层上,在所述目标图案的设置区域内,所述第二膜层与所述第一膜层堆叠;
    其中,所述第二膜层的膜收缩率小于所述第一膜层的膜收缩率,在所述目标图案的设置区域内,所述第一膜层的膜层边缘形成有朝向所述第二膜层的突起结构。
  2. 根据权利要求1所述的基板,其中,所述第一膜层在堆叠所述第二膜层的膜层边缘上,都形成有所述突起结构。
  3. 根据权利要求1所述的基板,其中,在一个目标图案的设置区域内,所述第一膜层形成有至少三个突起结构。
  4. 根据权利要求3所述的基板,其中,相邻突起结构之间的距离,大于所述突起结构宽度的三倍。
  5. 根据权利要求1所述的基板,其中,所述突起结构的截面为矩形、梯形、弧形中的至少一种。
  6. 根据权利要求1所述的基板,其中,所述第一膜层的材料为有机材料,所述第二膜层的材料为无机材料。
  7. 根据权利要求6所述的基板,其中,所述基板为彩膜基板,所述第一膜层为彩膜层和/或有机平坦化层,所述第二膜层为透明公共电极层。
  8. 根据权利要求6所述的基板,其中,所述基板为阵列基板,所述第一膜层为彩膜层,所述第二膜层为金属层。
  9. 根据权利要求8所述的基板,其中,所述第一膜层图案化形成过孔或者凹槽。
  10. 根据权利要求6所述的基板,其中,所述基板为阵列基板,所述第一膜层为有机高分子材料层,所述第二膜层为透明公共电极层。
  11. 一种显示装置,其包括显示面板,所述显示面板的基板包括:
    第一膜层;
    第二膜层;
    第三膜层;
    所述第一膜层形成在所述第三膜层上,并图案化形成目标图案;
    所述第二膜层形成在所述第三膜层和所述第一膜层上,在所述目标图案的设置区域内,所述第二膜层与所述第一膜层堆叠;
    其中,所述第二膜层的膜收缩率小于所述第一膜层的膜收缩率,在所述目标图案的设置区域内,所述第一膜层的膜层边缘形成有朝向所述第二膜层的突起结构。
  12. 根据权利要求11所述的显示装置,其中,所述第一膜层在堆叠所述第二膜层的膜层边缘上,都形成有所述突起结构。
  13. 根据权利要求11所述的显示装置,其中,在一个目标图案的设置区域内,所述第一膜层形成有至少三个突起结构。
  14. 根据权利要求13所述的显示装置,其中,相邻突起结构之间的距离,大于所述突起结构宽度的三倍。
  15. 根据权利要求11所述的显示装置,其中,所述突起结构的截面为矩形、梯形、弧形中的至少一种。
  16. 根据权利要求11所述的显示装置,其中,所述第一膜层的材料为有机材料,所述第二膜层的材料为无机材料。
  17. 根据权利要求16所述的显示装置,其中,所述基板为彩膜基板,所述第一膜层为彩膜层和/或有机平坦化层,所述第二膜层为透明公共电极层。
  18. 根据权利要求16所述的显示装置,其中,所述基板为阵列基板,所述第一膜层为彩膜层,所述第二膜层为金属层。
  19. 根据权利要求18所述的显示装置,其中,所述第一膜层图案化形成过孔或者凹槽。
  20. 根据权利要求16所述的显示装置,其中,所述基板为阵列基板,所述第一膜层为有机高分子材料层,所述第二膜层为透明公共电极层。
PCT/CN2019/105323 2019-06-06 2019-09-11 一种基板以及显示装置 Ceased WO2020244086A1 (zh)

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