WO2020237944A1 - 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法 - Google Patents

一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法 Download PDF

Info

Publication number
WO2020237944A1
WO2020237944A1 PCT/CN2019/108218 CN2019108218W WO2020237944A1 WO 2020237944 A1 WO2020237944 A1 WO 2020237944A1 CN 2019108218 W CN2019108218 W CN 2019108218W WO 2020237944 A1 WO2020237944 A1 WO 2020237944A1
Authority
WO
WIPO (PCT)
Prior art keywords
solder
welding
metal
brazing
brazing filler
Prior art date
Application number
PCT/CN2019/108218
Other languages
English (en)
French (fr)
Inventor
吴宇宁
马一飞
徐玉松
田开文
郭飞
周其刚
戴慧敏
Original Assignee
南京达迈科技实业有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南京达迈科技实业有限公司 filed Critical 南京达迈科技实业有限公司
Publication of WO2020237944A1 publication Critical patent/WO2020237944A1/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes

Definitions

  • the invention belongs to the field of solder and welding technology, and in particular relates to a solder used for connecting polysilicon and metal, a solder paste prepared by using the solder, a manufacturing method and a welding method thereof.
  • Magnetron sputtering is a coating method that uses charged particles to bombard a target material, so that atoms on the surface of the target material are sputtered onto the substrate to deposit a thin film.
  • the target is a consumable during the sputtering process.
  • the target assembly connects the target with the backing plate.
  • the backing plate supports the target and can provide the target with electrical conductivity and heat dissipation during the sputtering process. .
  • Brazing is the use of a solder with a lower melting point than the base material. After being heated to the melting point of the solder (not reaching the melting point of the base material), the solder is melted to fill the gap between the base metal and diffuse with the base metal to form a firm A welding method for connection. After the target component is sputtered and coated, the back plate of the target component can be recycled, and the target component only needs to be heated to a suitable temperature to melt the solder, which saves the production cost of the target.
  • the brazing connection between the silicon target and the copper backplane uses pure indium (purity 99.99%) as the solder, and a layer of indium is coated on the joint surface of the silicon target and the backplane to make the silicon target Reserve a certain gap with the backing plate, heating the target and the backing plate to control the temperature between 190 to 250°C, so that the indium solder between the silicon target and the backing plate is fully melted, spread evenly, and cooled to form.
  • the brazing rate of the process method can reach 90%, which basically meets the application requirements of magnetron sputtering.
  • the first objective of the present invention is to provide a solder for connecting polysilicon and metal, so that the brazing combination rate of polysilicon and metal can reach more than 95%, and the cost of solder is reduced;
  • the second object of the present invention is to provide a solder paste prepared by using the solder
  • the third object of the present invention is to provide a method for preparing the above solder paste
  • the fourth object of the present invention is to provide a method of soldering using the above solder paste.
  • the solder for connecting polysilicon and metal of the present invention is characterized in that it is composed of the following components by weight percentage: In70 ⁇ 75%, Sn10 ⁇ 15%, Sb 0.5 ⁇ 2%, Bi 8 ⁇ 12% and Zn0 .3 ⁇ 1.0%
  • the present invention prepares solder by compounding In, Sn, Sb, Bi and Zn, and can further increase the brazing bonding rate of polysilicon and metal to more than 95%;
  • In is the matrix component of the solder and mainly controls the solder
  • the mechanical properties of the metal structure; the addition of Bi can absorb the excess Sb in the alloy to form a solid solution, improve the fluidity and spreadability of the solder, and then increase the brazing rate of the joint; the addition of Zn can form a low melting point with In, Sn, and Bi respectively
  • the crystal structure improves the fluidity of the solder.
  • Zn and Sb can form a simple orthorhombic structure of SbZn intermetallic compound, which is dispersed in the weld structure to improve the mechanical properties of the joint.
  • Zn can adjust the oxygen content of the weld, and then control the welding The conductivity of the joint.
  • the solder paste prepared by using the above-mentioned solder in the present invention includes solder with a mass ratio of (3.6 ⁇ 4.2):(0.8 ⁇ 1.4) and an auxiliary agent; wherein the auxiliary agent includes a mass ratio of (4.6 ⁇ 5.2):(0.4) ⁇ 0.6): (3.8 ⁇ 4.2): (0.4 ⁇ 0.6) of rosin, hydrogenated castor oil, methanol and imidazole.
  • the method for preparing the solder paste of the present invention includes the following steps: the raw materials are distributed according to the solder composition, melted into an alloy at 180-280°C and prepared into solder powder, and the solder powder is mixed with an auxiliary agent. .
  • the method of the present invention for soldering using the above solder paste includes the following steps: coating a layer of solder paste on the bonding surface of polysilicon and metal, and setting a gap of 0.2 to 1.0 mm on the bonding surface, and heating to 150 to 200°C , Deposition and welding can be done.
  • a pressure of 300-800 Nf/cm 2 is applied between the polysilicon and the metal, and ultrasonic treatment is used.
  • the frequency of the ultrasonic wave may be 10000-30000 Hz, and the ultrasonic treatment time may be 4-8 min.
  • the present invention has significant advantages: the solder and the solder paste prepared by using the solder can achieve a combination rate of polysilicon target and metal back plate of more than 95%, achieving a good dissimilar material The binding effect is low, and the profit of the enterprise is increased; at the same time, the preparation method of the solder paste is simple, and the method of using the solder paste for soldering is highly operable.
  • the solder paste of the solder is prepared by the following steps:
  • the metal indium, tin, antimony, bismuth and zinc are mixed according to the composition ratio, and the alloy is melted in the resistance melting furnace at 180 ⁇ 280°C;
  • the alloy liquid is prepared into powder by the water atomization process, wherein the atomization water temperature is 20°C and the pressure is 0.2MPa;
  • the soldering method using the above solder paste includes the following steps: each layer of solder paste is coated on the joint surface of the polysilicon and the copper back plate, and the polysilicon target material coated with the solder layer and the copper back plate are pressed into the brazing gap The size of 0.3mm is combined, and the solder paste is heated to about 200°C on a heating table, and a pressure of 300-800Nf/cm 2 is applied between the polysilicon and the metal, and the ultrasonic treatment is performed.
  • the frequency of the ultrasonic It is 10000 ⁇ 30000Hz, and the ultrasonic treatment time is 4 ⁇ 8min to complete the brazing.
  • the brazing filler metal can fill the gap between the silicon target and the copper backing plate.
  • the brazing seam is well formed, tightly bonded, without obvious defects such as pores, and the interface is well organized.
  • the bonding rate between the target and the back plate after brazing reached 95%, the brazing joint strength was 31MPa, the electrical and thermal conductivity was good, and it could fully meet the requirements of the magnetron sputtering target.
  • the solder paste of the solder is prepared by the following steps:
  • Indium, tin, antimony, bismuth and zinc are mixed according to the composition ratio and melted into an alloy in a resistance melting furnace at 180 ⁇ 280°C;
  • the alloy liquid is prepared into powder by the water atomization process, where the atomization water temperature is 18°C and the pressure is 0.25MPa;
  • the soldering method using the above solder paste includes the following steps: each layer of solder paste is coated on the joint surface of the polysilicon and the copper back plate, and the polysilicon target material coated with the solder layer and the copper back plate are pressed according to the brazing gap The size of 0.3mm is combined, and the solder paste is heated to about 180°C on a heating table, and a pressure of 300-800Nf/cm 2 is applied between the polysilicon and the metal, and the ultrasonic is processed. The frequency of the ultrasonic It is 10000 ⁇ 30000Hz, and the ultrasonic treatment time is 4 ⁇ 8min to complete the brazing.
  • the brazing filler metal can fill the gap between the silicon target and the copper backing plate.
  • the brazing seam is well formed, tightly bonded, without obvious defects such as pores, and the interface is well organized.
  • the bonding rate between the target and the backplane after brazing reached 97%, the brazing joint strength was 33MPa, and the electrical and thermal conductivity was good, which could fully meet the requirements of magnetron sputtering targets.
  • brazing filler metal in this embodiment The components and contents of the brazing filler metal in this embodiment are shown in Table 3 below (tested by XRF tester).
  • the solder paste of the solder is prepared by the following steps:
  • the metal indium, tin, antimony, bismuth and zinc are mixed according to the composition ratio, and the alloy is melted in the resistance melting furnace at 180 ⁇ 280°C;
  • the alloy liquid is prepared into powder by the water atomization process, where the atomization water temperature is 25°C and the pressure is 0.28MPa;
  • the soldering method using the above solder paste includes the following steps: each layer of solder paste is coated on the joint surface of the polysilicon and the copper back plate, and the polysilicon target material coated with the solder layer and the copper back plate are pressed into the brazing gap
  • the size is 0.5mm and the combination is good.
  • Heat the solder paste on a heating table to about 200°C to melt the solder paste, and apply a pressure of 300-800Nf/cm 2 between the polysilicon and the metal, and use ultrasonic waves for treatment.
  • the frequency of the ultrasonic waves It is 10000 ⁇ 30000Hz, and the ultrasonic treatment time is 4 ⁇ 8min to complete the brazing.
  • the brazing filler metal can fill the gap between the silicon target and the copper backing plate.
  • the brazing seam is well formed, tightly bonded, without obvious defects such as pores, and the interface is well organized.
  • the bonding rate between the target and the backplane after brazing reached 96%, the brazing joint strength was 28MPa, and the electrical and thermal conductivity was good, which could fully meet the requirements of magnetron sputtering targets.
  • brazing filler metal in this embodiment The components and contents of the brazing filler metal in this embodiment are shown in Table 4 below (detected by XRF tester).
  • the solder paste of the solder is prepared by the following steps:
  • the metal indium, tin, antimony, bismuth and zinc are mixed according to the composition ratio, and the alloy is melted in a resistance melting furnace at 180 ⁇ 280°C;
  • the alloy liquid is prepared into powder by the water atomization process, wherein the atomization water temperature is 20°C and the pressure is 0.2MPa;
  • the soldering method using the above solder paste includes the following steps: each layer of solder paste is coated on the joint surface of the polysilicon and the copper back plate, and the polysilicon target material coated with the solder layer and the copper back plate are pressed according to the brazing gap The size of 0.2mm is combined, and the solder paste is heated to about 150°C on a heating table, and a pressure of 300-800Nf/cm 2 is applied between the polysilicon and the metal, and the ultrasonic is used for processing.
  • the frequency of the ultrasonic It is 10000 ⁇ 30000Hz, and the ultrasonic treatment time is 4 ⁇ 8min to complete the brazing.
  • the brazing filler metal can fill the gap between the silicon target and the copper backing plate.
  • the brazing seam is well formed, tightly bonded, without obvious defects such as pores, and the interface is well organized.
  • the bonding rate between the target and the back plate after brazing reached 95%, the brazing joint strength was 32MPa, and the electrical and thermal conductivity was good, which could fully meet the requirements of magnetron sputtering targets.
  • the solder paste of the solder is prepared by the following steps:
  • the metal indium, tin, antimony, bismuth and zinc are mixed according to the composition ratio, and the alloy is melted in a resistance melting furnace at 180 ⁇ 280°C;
  • the alloy liquid is prepared into powder by the water atomization process, wherein the atomization water temperature is 20°C and the pressure is 0.2MPa;
  • the soldering method using the above solder paste includes the following steps: each layer of solder paste is coated on the joint surface of the polysilicon and the copper back plate, and the polysilicon target material coated with the solder layer and the copper back plate are pressed according to the brazing gap The size of 0.2mm is combined, and the solder paste is heated to about 150°C on a heating table, and a pressure of 300-800Nf/cm 2 is applied between the polysilicon and the metal, and the ultrasonic is used for processing.
  • the frequency of the ultrasonic It is 10000 ⁇ 30000Hz, and the ultrasonic treatment time is 4 ⁇ 8min to complete the brazing.
  • the brazing filler metal can fill the gap between the silicon target and the copper backing plate.
  • the brazing seam is well formed, tightly bonded, without obvious defects such as pores, and the interface is well organized.
  • the bonding rate between the target and the back plate after brazing reached 96%, the brazed joint strength was 31MPa, the electrical and thermal conductivity was good, and it could fully meet the requirements of the magnetron sputtering target.
  • the basic preparation method is the same as that of Example 5, except for the composition and content of the brazing filler metal, as shown in Table 6 below.
  • the brazing filler metal can fill the gap between the silicon target and the copper backing plate.
  • the brazing seam is well formed, tightly bonded, without obvious defects such as pores, and the interface is well organized.
  • the bonding rate between the target and the backplane after brazing reached 97%, the brazing joint strength was 35MPa, and the electrical and thermal conductivity was good, which could fully meet the requirements of the magnetron sputtering target.
  • the basic preparation method is the same as in Example 5, except for the composition and content of the brazing filler metal, as shown in Table 7 below.
  • the brazing filler metal can fill the gap between the silicon target and the copper backing plate.
  • the brazing seam is well formed, tightly bonded, without obvious defects such as pores, and the interface is well organized.
  • the bonding rate between the target and the back plate after brazing reached 95%, the brazing joint strength was 32MPa, and the electrical and thermal conductivity was good, which could fully meet the requirements of magnetron sputtering targets.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种用于多晶硅与金属连接的钎料，按重量百分比由如下组分组成：In70～75％、Sn10～15％、Sb0.5～2％、Bi8～12％及Zn0.3～1.0％。还公开了采用该钎料制备的焊膏、焊膏的制法及用焊膏进行焊接的方法，所述焊膏包括质量比为4∶1的钎料及助剂；焊膏制备时先按钎料组分配比原料，熔化成合金并制备成钎料粉末，将该钎料粉末与助剂混合配制即可。采用该焊膏进行焊接时，在多晶硅和金属的结合面上各涂覆一层焊膏层，并在结合面上设置缝隙0.2～1.0mm，加热至150～200℃，熔敷、焊合即可。采用该钎料制备的焊膏能够将多晶硅靶与金属背板的结合率达到95％以上，达到了良好的异种材料绑定效果，且其成本低；同时焊膏的制备方法简单，采用该焊膏进行焊接的方法可操作性强。

Description

一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法 技术领域
本发明属于钎料与焊接工艺领域，尤其涉及一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法。
背景技术
磁控溅射是利用带电粒子轰击靶材，使靶材表面的原子溅射到基片上沉积薄膜的镀膜方法。靶材是溅射过程中的耗材，靶材组件是将靶材与背板连接在一起，背板起到支撑靶材的作用，并且能在溅射过程中为靶材提供导电和散热的功能。
钎焊是利用熔点比母材低的钎料，在加热到钎料熔点(未到母材熔点)后，使钎料熔化，填满母材之间的间隙，并与母材相互扩散形成牢固连接的一种焊接方法。在靶材组件溅射镀膜之后，可以回收利用靶材组件的背板，只需将靶材组件加热到适合的温度使钎料熔化，节约靶材的制作成本。
目前硅靶材与铜背板的钎焊连接，是以纯铟(纯度达99.99％)材料作为钎料，在硅靶材和背板结合面涂覆一层铟的钎料层，使硅靶材与背板之间预留一定的间隙，加热靶材与背板将温度控制在190到250℃之间，使硅靶材和背板之间的铟钎料熔化充分、均匀铺展、冷却成型，该工艺方法的钎合率可达到90％，基本满足磁控溅射的使用要求。
然而由于纯铟价格昂贵，采用纯铟作为钎料会增加企业的成本。因此，亟需一种新型的用于连接多晶硅靶与金属背板的钎料，在提高多晶硅靶与金属背板结合率的同时降低生产成本。
发明内容
发明目的：本发明的第一目的是提供一种用于多晶硅与金属连接的钎料，使多晶硅与金属的钎焊结合率达到95％以上，且降低钎料成本；
本发明的第二目的是提供一种采用该钎料制备的焊膏；
本发明的第三目的是提供上述焊膏的制备方法；
本发明的第四目的是提供采用上述焊膏进行焊接的方法。
技术方案：本发明用于多晶硅与金属连接的钎料，其特征在于按重量百分比 由如下组分组成：In70～75％、Sn10～15％、Sb 0.5～2％、Bi 8～12％及Zn0.3～1.0％
本发明通过将In、Sn、Sb、Bi及Zn进行复配制备钎料，进而能够将多晶硅与金属的钎焊结合率达到95％以上；其中，In是钎料的基体成分，主要控制钎料的熔点和面向多晶硅与金属的双向扩散能力；添加Sn能够调节钎料的熔点、降低贵金属In的合金比例；添加Sb能够形成立方结构的InSb金属间化合物，调节钎焊接头的结合强度，提高异种金属结构的力学性能；添加Bi能吸收合金中富余的Sb形成固溶体，改善钎料的流动性、铺展性，进而提高接头的钎合率；添加Zn能够与In、Sn、Bi分别形成低熔点共晶组织提高钎料的流动性，Zn与Sb能形成简单斜方结构的SbZn金属间化合物，并弥散分布于焊缝组织中提高接头力学性能，同时Zn能调节焊缝的氧含量，继而调控焊接接头的传导性能。
本发明采用上述钎料制备的焊膏，包括质量比为(3.6～4.2)∶(0.8～1.4)的钎料及助剂；其中，所述助剂包括质量比为(4.6～5.2)∶(0.4～0.6)∶(3.8～4.2)∶(0.4～0.6)的松香、氢化蓖麻油、甲醇及咪唑。
本发明制备上述焊膏的方法，包括如下步骤：按钎料组分配比原料，在180～280℃条件下熔化成合金并制备成钎料粉末，将该钎料粉末与助剂混合配制即可。
本发明采用上述焊膏进行焊接的方法，包括如下步骤：在多晶硅和金属的结合面上各涂覆一层焊膏层，并在结合面上设置缝隙0.2～1.0mm，加热至150～200℃，熔敷、焊合即可。
进一步说，在焊膏层熔敷后，在多晶硅和金属之间施加300～800Nf/cm 2的压力，并采用超声波进行处理。优选的，超声波的频率可为10000～30000Hz，超声处理时间4～8min。
有益效果：与现有技术相比，本发明的显著优点为：该钎料及采用该钎料制备的焊膏能够将多晶硅靶与金属背板的结合率达到95％以上，达到了良好的异种材料绑定效果，且其成本低，提高了企业的利润；同时，焊膏的制备方法简单，采用该焊膏进行焊接的方法可操作性强。
具体实施方式
下面结合实施例对本发明的技术方案做进一步详细说明。
实施例1
该实施例的钎料组分及含量如下表1所示(采用XRF测试仪检测)。
表1 实施例1的钎料组分及含量
组分 In Sn Sb Bi Zn
含量(％) 74 15 2 8.2 0.8
该钎料的焊膏通过如下步骤制得：
(1)按成分比例配料金属铟、锡、锑、铋和锌，在电阻熔炼炉中、180～280℃条件下熔化成合金；
(2)采用水雾化工艺将合金液制备成粉末，其中雾化水温度20℃、压力0.2MPa；
(3)对粉末进行干燥和分选，取粒径≯50μm粉末为合金粉为钎料；
(4)合金粉末钎料与钎焊助剂按4∶1进行混合配制成焊膏；其中，钎焊助剂成分配比为：松香∶氢化蓖麻油∶甲醇∶咪唑＝5∶0.5∶4∶0.5。
采用上述焊膏进行焊接的方法包括如下步骤：在多晶硅和铜背板的结合面上各涂覆一层焊膏层，将涂覆有钎料层的多晶硅靶材与铜背板按钎缝间隙为0.3mm尺寸组合好，在加热台上加热至200℃左右，使焊膏熔化，并在在多晶硅和金属之间施加300～800Nf/cm 2的压力，并采用超声波进行处理，该超声波的频率为10000～30000Hz，超声处理时间4～8min以完成钎焊。
性能检测
钎焊后钎料能很好地填充硅靶材与铜背板之间的间隙，钎缝成型良好，结合紧密，无气孔等明显缺陷，界面组织良好。经过检验，钎焊后靶材与背板地结合率达到了95％，钎缝接头强度为31MPa，导电导热性能良好，完全能满足磁控溅射靶材的要求。
实施例2
该实施例的钎料组分及含量如下表2所示(采用XRF测试仪检测)。
表2 实施例2的钎料组分及含量
组分 In Sn Sb Bi Zn
含量(％) 74.7 15 1.2 8.5 0.6
该钎料的焊膏通过如下步骤制得：
(1)按成分比例配料金属铟、锡、锑、铋和锌，在电阻熔炼炉中、180～280℃条件下熔化成合金；
(2)采用水雾化工艺将合金液制备成粉末，其中雾化水温度18℃、压力0.25MPa；
(3)对粉末进行干燥和分选，取粒径≯50μm粉末为合金粉为钎料；
(4)合金粉末钎料与钎焊助剂按3.9∶1.1进行混合配制成焊膏；其中，钎焊助剂成分配比为：松香∶氢化蓖麻油∶甲醇∶咪唑＝4.8∶0.6∶4∶0.6。
采用上述焊膏进行焊接的方法包括如下步骤：在多晶硅和铜背板的结合面上各涂覆一层焊膏层，将涂覆有钎料层的多晶硅靶材与铜背板按钎缝间隙为0.3mm尺寸组合好，在加热台上加热至180℃左右，使焊膏熔化，并在在多晶硅和金属之间施加300～800Nf/cm 2的压力，并采用超声波进行处理，该超声波的频率为10000～30000Hz，超声处理时间4～8min以完成钎焊。
性能检测
钎焊后钎料能很好地填充硅靶材与铜背板之间的间隙，钎缝成型良好，结合紧密，无气孔等明显缺陷，界面组织良好。经过检验，钎焊后靶材与背板地结合率达到了97％，钎缝接头强度为33MPa，导电导热性能良好，完全能满足磁控溅射靶材的要求。
实施例3
该实施例的钎料组分及含量如下表3所示(采用XRF测试仪检测)。
表3 实施例3的钎料组分及含量
组分 In Sn Sb Bi Zn
含量(％) 71.6 14 2 11.5 0.9
该钎料的焊膏通过如下步骤制得：
(1)按成分比例配料金属铟、锡、锑、铋和锌，在电阻熔炼炉中、180～280℃条件下熔化成合金；
(2)采用水雾化工艺将合金液制备成粉末，其中雾化水温度25℃、压力0.28MPa；
(3)对粉末进行干燥和分选，取粒径≯50μm粉末为合金粉为钎料；
(4)合金粉末钎料与钎焊助剂按4.1∶0.9进行混合配制成焊膏；其中，钎焊 助剂成分配比为：松香∶氢化蓖麻油∶甲醇∶咪唑＝4.7∶0.5∶4.1∶0.5。
采用上述焊膏进行焊接的方法包括如下步骤：在多晶硅和铜背板的结合面上各涂覆一层焊膏层，将涂覆有钎料层的多晶硅靶材与铜背板按钎缝间隙为0.5mm尺寸组合好，在加热台上加热至200℃左右，使焊膏熔化，并在在多晶硅和金属之间施加300～800Nf/cm 2的压力，并采用超声波进行处理，该超声波的频率为10000～30000Hz，超声处理时间4～8min以完成钎焊。
性能检测
钎焊后钎料能很好地填充硅靶材与铜背板之间的间隙，钎缝成型良好，结合紧密，无气孔等明显缺陷，界面组织良好。经过检验，钎焊后靶材与背板地结合率达到了96％，钎缝接头强度为28MPa，导电导热性能良好，完全能满足磁控溅射靶材的要求。
实施例4
该实施例的钎料组分及含量如下表4所示(采用XRF测试仪检测)。
表4 实施例4的钎料组分及含量
组分 In Sn Sb Bi Zn
含量(％) 70 15 2 12 1
该钎料的焊膏通过如下步骤制得：
(1)按成分比例配料金属铟、锡、锑、铋和锌，在电阻熔炼炉中、180～280℃条件下熔化成合金；
(2)采用水雾化工艺将合金液制备成粉末，其中雾化水温度20℃、压力0.2MPa；
(3)对粉末进行干燥和分选，取粒径≯50μm粉末为合金粉为钎料；
(4)合金粉末钎料与钎焊助剂按3.6∶0.8进行混合配制成焊膏；其中，钎焊助剂成分配比为：松香∶氢化蓖麻油∶甲醇∶咪唑＝4.6∶0.4∶3.8∶0.4。
采用上述焊膏进行焊接的方法包括如下步骤：在多晶硅和铜背板的结合面上各涂覆一层焊膏层，将涂覆有钎料层的多晶硅靶材与铜背板按钎缝间隙为0.2mm尺寸组合好，在加热台上加热至150℃左右，使焊膏熔化，并在在多晶硅和金属之间施加300～800Nf/cm 2的压力，并采用超声波进行处理，该超声波的频率为10000～30000Hz，超声处理时间4～8min以完成钎焊。
性能检测
钎焊后钎料能很好地填充硅靶材与铜背板之间的间隙，钎缝成型良好，结合紧密，无气孔等明显缺陷，界面组织良好。经过检验，钎焊后靶材与背板地结合率达到了95％，钎缝接头强度为32MPa，导电导热性能良好，完全能满足磁控溅射靶材的要求。
实施例5
该实施例的钎料组分及含量如下表5所示(采用XRF测试仪检测)。
表5 实施例5的钎料组分及含量
组分 In Sn Sb Bi Zn
含量(％) 75 15 1.7 8 0.3
该钎料的焊膏通过如下步骤制得：
(1)按成分比例配料金属铟、锡、锑、铋和锌，在电阻熔炼炉中、180～280℃条件下熔化成合金；
(2)采用水雾化工艺将合金液制备成粉末，其中雾化水温度20℃、压力0.2MPa；
(3)对粉末进行干燥和分选，取粒径≯50μm粉末为合金粉为钎料；
(4)合金粉末钎料与钎焊助剂按4.2∶1.4进行混合配制成焊膏；其中，钎焊助剂成分配比为：松香∶氢化蓖麻油∶甲醇∶咪唑＝5.2∶0.5∶4.2∶0.5。
采用上述焊膏进行焊接的方法包括如下步骤：在多晶硅和铜背板的结合面上各涂覆一层焊膏层，将涂覆有钎料层的多晶硅靶材与铜背板按钎缝间隙为0.2mm尺寸组合好，在加热台上加热至150℃左右，使焊膏熔化，并在在多晶硅和金属之间施加300～800Nf/cm 2的压力，并采用超声波进行处理，该超声波的频率为10000～30000Hz，超声处理时间4～8min以完成钎焊。
性能检测
钎焊后钎料能很好地填充硅靶材与铜背板之间的间隙，钎缝成型良好，结合紧密，无气孔等明显缺陷，界面组织良好。经过检验，钎焊后靶材与背板地结合率达到了96％，钎缝接头强度为31MPa，导电导热性能良好，完全能满足磁控溅射靶材的要求。
实施例6
基本制备方法与实施例5相同，不同之处在于钎料组分及含量，具体如下表6所示。
表6 实施例6的钎料组分及含量
组分 In Sn Sb Bi Zn
含量(％) 75 10 2 12 1
性能检测
钎焊后钎料能很好地填充硅靶材与铜背板之间的间隙，钎缝成型良好，结合紧密，无气孔等明显缺陷，界面组织良好。经过检验，钎焊后靶材与背板地结合率达到了97％，钎缝接头强度为35MPa，导电导热性能良好，完全能满足磁控溅射靶材的要求。
实施例7
基本制备方法与实施例5相同，不同之处在于钎料组分及含量，具体如下表7所示。
表7 实施例7的钎料组分及含量
组分 In Sn Sb Bi Zn
含量(％) 75 11.5 0.5 12 1
性能检测
钎焊后钎料能很好地填充硅靶材与铜背板之间的间隙，钎缝成型良好，结合紧密，无气孔等明显缺陷，界面组织良好。经过检验，钎焊后靶材与背板地结合率达到了95％，钎缝接头强度为32MPa，导电导热性能良好，完全能满足磁控溅射靶材的要求。

Claims (6)

  1. 一种用于多晶硅与金属连接的钎料，其特征在于按重量百分比由如下组分组成：In70～75％、Sn10～15％、Sb0.5～2％、Bi8～12％及Zn0.3～1.0％。
  2. 采用权利要求1所述钎料制备的焊膏，其特征在于：该焊膏包括质量比为(3.6～4.2)∶(0.8～1.4)的钎料及助剂；其中，所述助剂包括质量比为(4.6～5.2)∶(0.4～0.6)∶(3.8～4.2)∶(0.4～0.6)的松香、氢化蓖麻油、甲醇及咪唑。
  3. 一种制备权利要求2所述焊膏的方法，其特征在于包括如下步骤：按钎料组分配比原料，在180～280℃条件下熔化成合金并制备成钎料粉末，将该钎料粉末与助剂混合配制即可。
  4. 采用权利要求2所述焊膏进行焊接的方法，其特征在于包括如下步骤：在多晶硅和金属的结合面上各涂覆一层焊膏层，并在结合面上设置缝隙0.2～1.0mm，加热至150～200℃，熔敷、焊合即可。
  5. 根据权利要求4所述采用焊膏进行焊接的方法，其特征在于：所述在焊膏层熔敷后，在多晶硅和金属之间施加300～800Nf/cm 2的压力，并采用超声波进行处理。
  6. 根据权利要求5所述采用焊膏进行焊接的方法，其特征在于：所述超声波的频率为10000～30000Hz，超声处理时间4～8min。
PCT/CN2019/108218 2019-05-29 2019-09-26 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法 WO2020237944A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910457047.3A CN110064864B (zh) 2019-05-29 2019-05-29 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法
CN201910457047.3 2019-05-29

Publications (1)

Publication Number Publication Date
WO2020237944A1 true WO2020237944A1 (zh) 2020-12-03

Family

ID=67371997

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/108218 WO2020237944A1 (zh) 2019-05-29 2019-09-26 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法

Country Status (2)

Country Link
CN (1) CN110064864B (zh)
WO (1) WO2020237944A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110064864B (zh) * 2019-05-29 2020-07-31 南京达迈科技实业有限公司 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法
CN111014933A (zh) * 2019-12-26 2020-04-17 昆山全亚冠环保科技有限公司 一种提升靶材焊合率的方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1764515A (zh) * 2003-04-01 2006-04-26 千住金属工业株式会社 焊膏以及印刷电路板
JP2007090407A (ja) * 2005-09-30 2007-04-12 Toshiba Corp 電子部品の接合材料、プリント回路配線基板、及び電子機器
CN101007373A (zh) * 2006-12-04 2007-08-01 云南锡业集团（控股）有限责任公司 无铅焊料合金
CN102492870A (zh) * 2011-12-13 2012-06-13 厦门大学 电子封装用锡铋铜银合金弥散型复合粉及其制备方法
GB201308069D0 (en) * 2012-08-13 2013-06-12 Hyundai Motor Co Ltd Lead-free solder composition for glass
CN103433643A (zh) * 2013-09-03 2013-12-11 东莞市广臣金属制品有限公司 一种焊锡膏
CN109590633A (zh) * 2019-01-01 2019-04-09 王伟 用于集成电路封装的引线焊接钎料及其制备方法和应用
CN109702372A (zh) * 2019-03-06 2019-05-03 上海莜玮汽车零部件有限公司 无铅焊料合金及其应用
CN110064864A (zh) * 2019-05-29 2019-07-30 南京达迈科技实业有限公司 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1139607A (zh) * 1995-06-30 1997-01-08 三星电机株式会社 具有优越力学性质的无铅焊料
WO2012127642A1 (ja) * 2011-03-23 2012-09-27 千住金属工業株式会社 鉛フリーはんだ合金
CN102409299B (zh) * 2011-09-07 2014-08-06 三峡大学 一种氧化物陶瓷溅射靶的制备方法
JP6561467B2 (ja) * 2015-01-05 2019-08-21 富士通株式会社 Ｓｎ−５８Ｂｉ共晶合金、電子部品および電子装置の製造方法
CN105728977B (zh) * 2016-04-29 2018-06-19 广东中实金属有限公司 一种高可靠性低温无铅锡膏及其制备方法
JP6956365B2 (ja) * 2017-02-10 2021-11-02 パナソニックＩｐマネジメント株式会社 はんだペーストとそれにより得られる実装構造体

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1764515A (zh) * 2003-04-01 2006-04-26 千住金属工业株式会社 焊膏以及印刷电路板
JP2007090407A (ja) * 2005-09-30 2007-04-12 Toshiba Corp 電子部品の接合材料、プリント回路配線基板、及び電子機器
CN101007373A (zh) * 2006-12-04 2007-08-01 云南锡业集团（控股）有限责任公司 无铅焊料合金
CN102492870A (zh) * 2011-12-13 2012-06-13 厦门大学 电子封装用锡铋铜银合金弥散型复合粉及其制备方法
GB201308069D0 (en) * 2012-08-13 2013-06-12 Hyundai Motor Co Ltd Lead-free solder composition for glass
CN103433643A (zh) * 2013-09-03 2013-12-11 东莞市广臣金属制品有限公司 一种焊锡膏
CN109590633A (zh) * 2019-01-01 2019-04-09 王伟 用于集成电路封装的引线焊接钎料及其制备方法和应用
CN109702372A (zh) * 2019-03-06 2019-05-03 上海莜玮汽车零部件有限公司 无铅焊料合金及其应用
CN110064864A (zh) * 2019-05-29 2019-07-30 南京达迈科技实业有限公司 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法

Also Published As

Publication number Publication date
CN110064864A (zh) 2019-07-30
CN110064864B (zh) 2020-07-31

Similar Documents

Publication Publication Date Title
WO2020237944A1 (zh) 一种用于多晶硅与金属连接的钎料、采用该钎料制备的焊膏与制法及用其焊接的方法
CN113263237A (zh) 一种高纯硅靶材与铜背板的钎焊方法
JP5339830B2 (ja) 密着性に優れた薄膜トランジスター用配線膜およびこの配線膜を形成するためのスパッタリングターゲット
CN106319469B (zh) 一种铜铟镓合金靶材的制备方法
CN107570826A (zh) 靶材组件的制造方法
CN102409300B (zh) 氧化物陶瓷溅射靶及其制备方法和所用的钎焊合金
US4358506A (en) Metal and carbon composites thereof
CN109332943A (zh) 一种应用无卤素高阻抗固态松香助焊剂的锡丝及其制备方法
CN104043911B (zh) 一种可形成均匀组织焊点的无铅焊料及其焊接方法
CN107570905A (zh) 靶材组件的制造方法
Zhang et al. Improvement of high-temperature thermal aging reliability of Ag–Au joints by modifying Ni/Au surface finish
US2323169A (en) Process of plating metal bodies
WO2009143677A1 (zh) 高熔点无铅焊料及其生产工艺
CN109023269A (zh) 一种靶材的制作方法
CN110246769B (zh) 基于阳离子导电金属与玻璃表面原位金属化共晶键合方法
CN110846627A (zh) 一种旋转靶材冷绑定工艺
CN101857457A (zh) 一种陶瓷复合基板与金属结合的过渡层及其制备方法
CN109290699A (zh) 一种单面焊双面成型的覆膜衬垫焊剂及其制备方法
US11538673B2 (en) Sputtering target-backing plate assembly
CN1927523A (zh) 热浸镀用无铅焊料合金
CN113523239A (zh) 一种使用铟锡混合材料的靶材绑定工艺
TWI697373B (zh) 鋁基金屬之接合方法
TW201711983A (zh) 製作濺鍍靶材的銲料及其應用方法
RU2486995C2 (ru) Способ получения композиционного катода
TWI772254B (zh) 電連接帶

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19930232

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19930232

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 19930232

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 23/06/2022)

122 Ep: pct application non-entry in european phase

Ref document number: 19930232

Country of ref document: EP

Kind code of ref document: A1