WO2020237841A1 - Oled显示面板和显示装置 - Google Patents

Oled显示面板和显示装置 Download PDF

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Publication number
WO2020237841A1
WO2020237841A1 PCT/CN2019/100833 CN2019100833W WO2020237841A1 WO 2020237841 A1 WO2020237841 A1 WO 2020237841A1 CN 2019100833 W CN2019100833 W CN 2019100833W WO 2020237841 A1 WO2020237841 A1 WO 2020237841A1
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WIPO (PCT)
Prior art keywords
layer
hole
substrate
display panel
oled display
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Application number
PCT/CN2019/100833
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English (en)
French (fr)
Inventor
李文齐
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/497,446 priority Critical patent/US11121330B2/en
Publication of WO2020237841A1 publication Critical patent/WO2020237841A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • This application relates to the field of display technology, and in particular to an OLED display panel and a display device.
  • the fingerprint recognition technology under the optical screen has become the most popular cutting-edge technology research and development topic in recent years.
  • the light emitted by the OLED is reflected by the finger and passes through the OLED display.
  • Each film layer of the panel reaches the sensor IC placed on the back of the display panel, and the fingerprint information of the user is identified through the comparison of the sensor IC to unlock the OLED display device.
  • the OLED display panel is realized through a multi-layer process, and part of the light passing through each layer will be lost. When it finally reaches the sensor IC on the back of the display panel, the light loss is too large, resulting in poor fingerprint recognition.
  • the existing OLED display panel has a technical problem of low light transmittance and needs improvement.
  • the present application provides an OLED display panel and a display device to alleviate the technical problem of low light transmittance of the existing OLED display panel.
  • This application provides an OLED display panel, including:
  • the driving circuit layer is formed on one side of the substrate
  • a luminescent material layer formed on the side of the driving circuit layer away from the substrate;
  • the sensing unit is arranged in a direction away from the driving circuit layer of the substrate, and is used to receive the light reflected by the fingerprint;
  • the substrate in the fingerprint recognition area of the OLED display panel, is formed with a through hole, and the light emitted by the light-emitting material layer is reflected by the fingerprint and then passes through the through hole to reach the sensing unit.
  • the driving circuit layer is not patterned.
  • the substrate in the fingerprint recognition area, is provided with a plurality of first through holes that are not in contact with each other.
  • the substrate in the fingerprint recognition area, includes a middle area and an edge area, the edge area surrounds the middle area, and the first through hole is in the middle area The density is greater than the density in the edge region.
  • the plurality of first through holes are arranged at equal intervals.
  • the OLED display panel further includes a protective layer disposed on the side of the substrate away from the driving circuit layer.
  • the protective layer In the fingerprint recognition area, the protective layer is formed with a plurality of second through holes, and the second through holes correspond to the first through holes one to one.
  • the substrate in the fingerprint recognition area, is formed with a third through hole.
  • the OLED display panel further includes a protective layer disposed on the side of the substrate away from the driving circuit layer.
  • the protective layer In the fingerprint recognition area, the protective layer The layer is formed with a fourth through hole, and the fourth through hole corresponds to the third through hole.
  • the driving circuit layer includes a gate layer, a source and drain layer, and a signal line layer.
  • the driving circuit layer is patterned to form a fifth through hole
  • the substrate is formed with a sixth through hole, and the light emitted by the luminescent material layer passes through the fifth through hole after being reflected by the fingerprint, and reaches the sixth through hole and the sensing unit based on the small hole imaging.
  • the fifth through hole is formed by the gate layer.
  • the gate layer includes a first gate layer and a second gate layer, and the fifth through hole is formed by the first gate layer.
  • the gate layer includes a first gate layer and a second gate layer, and the fifth through hole is formed by the second gate layer.
  • the fifth through hole is formed by the source and drain layer.
  • the fifth through hole is formed by the signal line layer.
  • the OLED display panel further includes a protective layer disposed on the side of the substrate away from the driving circuit layer.
  • the protective layer A seventh through hole is formed in the layer, and the seventh through hole corresponds to the sixth through hole.
  • the application also provides a display device, including an OLED display panel, the OLED display panel including:
  • the driving circuit layer is formed on one side of the substrate
  • a luminescent material layer formed on the side of the driving circuit layer away from the substrate;
  • a sensing unit formed on the substrate in a direction away from the driving circuit layer, for receiving light reflected by fingerprints
  • the substrate in the fingerprint recognition area of the OLED display panel, is formed with a through hole, and the light emitted by the light-emitting material layer is reflected by the fingerprint and then passes through the through hole to reach the sensing unit.
  • the driving circuit layer is not patterned.
  • the substrate in the fingerprint recognition area, is provided with a plurality of first through holes that do not contact each other.
  • the substrate in the fingerprint identification area, is formed with a third through hole.
  • the driving circuit layer includes a gate layer, a source and drain layer, and a signal line layer.
  • the driving circuit layer is patterned to form a fifth through hole, so The substrate is formed with a sixth through hole, and light emitted from the luminescent material layer passes through the fifth through hole after being reflected by a fingerprint, and reaches the sixth through hole and the sensing unit based on the small hole imaging.
  • the present application provides an OLED display panel and a display device.
  • the OLED display panel includes a substrate, a driving circuit layer, a light-emitting material layer, and a sensing unit.
  • the driving circuit layer is formed on one side of the substrate; the light-emitting material layer Is formed on the side of the driving circuit layer away from the substrate; the sensing unit is formed in the direction of the substrate away from the driving circuit layer for receiving light reflected by fingerprints; wherein, in the OLED In the fingerprint recognition area of the display panel, the substrate is formed with a through hole, and the light emitted by the luminescent material layer is reflected by the fingerprint and then passes through the through hole to reach the sensing unit.
  • the light transmittance of the substrate in the fingerprint recognition area is increased, so that the light emitted by the luminescent material layer is reflected by the fingerprint, and the loss on the path to the sensing unit is reduced. Enhanced fingerprint recognition effect.
  • FIG. 1 is a schematic diagram of the first structure of an OLED display panel provided by an embodiment of the application
  • FIG. 2 is a schematic diagram of a substrate structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 3 is a schematic diagram of a second structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 4 is a schematic diagram of a third structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 5 is a schematic diagram of a fourth structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of a fifth structure of an OLED display panel provided by an embodiment of the application.
  • the present application provides an OLED display panel and a display device to alleviate the technical problem of low light transmittance of the existing OLED display panel.
  • FIG. 1 it is a schematic diagram of the first structure of the OLED display panel provided by an embodiment of this application.
  • the OLED display panel includes a substrate 10, a driving circuit layer 20, a luminescent material layer 30, a sensing unit 40, a buffer layer 50, an encapsulation layer 60, and a fingerprint recognition unit 70.
  • the OLED display panel also includes a fingerprint recognition area 100, which is located in the fingerprint recognition area In 100, a through hole is formed on the substrate 10.
  • the substrate 10 is usually a glass substrate or a flexible substrate.
  • the substrate 10 is a flexible substrate made of polyimide.
  • the buffer layer 50 is formed on one side of the substrate 10. When the surface of the substrate 10 is relatively uneven, the buffer layer 50 can improve the surface flatness of the substrate 10. According to the type of the substrate 10, one or more buffer layers 50 may be provided on the substrate 10, or the buffer layer 50 may not be provided.
  • the buffer layer 115 may be an organic material, such as photoresist, polyacrylic resin, polyimide resin, polyamide resin, siloxane resin, acrylic resin, epoxy resin, etc.
  • At least one of, can also be an inorganic material, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), silicon carbide nitride (SiCxNy), aluminum oxide (AlOx) ), aluminum nitride (AlNx), tantalum oxide (TaOx), hafnium oxide (HfOx), oxygen At least one of zirconium oxide (ZrOx) and titanium oxide (TiOx).
  • silicon oxide SiOx
  • SiNx silicon nitride
  • SiOxNy silicon oxynitride
  • SiOxCy silicon oxycarbide
  • SiCxNy silicon carbide nitride
  • AlOx aluminum oxide
  • AlNx aluminum nitride
  • TaOx tantalum oxide
  • oxygen At least one
  • the driving circuit layer 20 is formed on the side of the buffer layer 50 away from the substrate 10.
  • the thin film transistor in the driving circuit layer 20 has a top gate structure, and the driving circuit layer 20 includes an active layer 21, a gate insulating layer 22, The gate layer, the interlayer insulating layer 24, the source and drain layers, and the planarization layer 27.
  • the active layer 21 is arranged on the side of the buffer layer 50 away from the substrate 10.
  • the material of the active layer 21 may be an oxide semiconductor, an inorganic semiconductor, an organic semiconductor, etc., for example, it may include zinc oxide (ZnOx), gallium oxide (GaOx) , TiOx, tin oxide (SnOx), indium oxide (InOx), indium gallium oxide (IGO), indium zinc oxide (IZO), indium tin oxide (ITO), gallium zinc oxide (GZO), Zinc magnesium oxide (ZMO), zinc tin oxide (ZTO), zinc zirconium oxide (ZnZrxOy), indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium hafnium oxide (IGHO), tin aluminum zinc oxide ( At least one of TAZO), indium gallium tin oxide (IGTO), and the like.
  • the gate insulating layer 22 is formed on a side of the active layer 21 away from the buffer layer 50, and the gate insulating layer 22 may include an organic material or an inorganic material.
  • the gate layer is formed on the side of the gate insulating layer 22 away from the active layer 21, and the gate 23 is patterned.
  • the material of the gate 23 can be metal, metal alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. , Such as gold (Au), silver (Ag), aluminum (Al), aluminum alloy, aluminum nitride (AlNx), silver alloy, tungsten (W), tungsten nitride (WNx), copper (Cu), copper alloy, Nickel (Ni), chromium (Cr), chromium nitride (CrNx), molybdenum (Mo), molybdenum alloy, Ti, titanium nitride (TiNx), platinum (Pt), tantalum (Ta), tantalum nitride (TaNx) At least one of neodymium (Nd), scandium (Sc), strontium ruthenium oxide (SRO), zinc oxide (ZnOx), SnOx
  • the gate 23 may have a multi-layer structure, for example, including a first gate (not shown in the figure) and a second gate (not shown in the figure) that are stacked, and the gate insulating layer 22 is also It includes a first gate insulating layer (not shown) and a second gate insulating layer (not shown).
  • the first gate insulating layer is formed on the side of the active layer 21 away from the buffer layer 21, and the first gate is formed on The first gate insulating layer is on the side away from the active layer 21, the second gate insulating layer is formed on the side of the first gate away from the first gate insulating layer, and the second gate is formed on the second gate insulating layer away from the first gate.
  • One side of the pole is
  • the interlayer insulating layer 24 is formed on the side of the gate 23 away from the gate insulating layer 22.
  • the material of the interlayer insulating layer 24 can be silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), and carbon oxide. At least one of silicon (SiOxCy), silicon carbonitride (SiCxNy), hafnium oxide (HfOx), aluminum oxide (AlOx), zirconium oxide (ZrOx), titanium oxide (TiOx), and tantalum oxide (TaOx).
  • the source and drain layer is formed on the side of the interlayer insulating layer 24 away from the gate 23, and patterned to form the source 25 and the drain 26.
  • the material of the source 25 and the drain 26 can be metal, alloy, metal nitride, conductive Metal oxides or transparent conductive materials, such as aluminum (Al), aluminum alloy, aluminum nitride (AlNx), silver (Ag), silver alloy, tungsten (W), tungsten nitride (WNx), copper (Cu ), copper alloy, nickel (Ni), chromium (Cr), chromium nitride (CrNx), molybdenum (Mo), molybdenum alloy, titanium (Ti), titanium nitride (TiNx), platinum (Pt), tantalum (Ta ), tantalum nitride (TaNx), neodymium (Nd), scandium (Sc), strontium ruthenium oxide (SRO), zinc oxide (ZnOx), in
  • the active layer 21 includes a source region corresponding to the source 25, a drain region corresponding to the drain 26, and a channel region between the source region and the drain region (none of the drawings).
  • the gate insulating layer 23 and the interlayer insulating layer 24 are formed with via holes, and the source electrode 25 is connected to the active layer 21 through the via holes; in the drain region, the gate insulating layer 23 and the interlayer insulating layer A via hole 24 is also formed, and the drain electrode 26 is connected to the active layer 21 through the via hole.
  • the planarization layer 27 is formed on the side of the source electrode 25 and the drain electrode 26 away from the interlayer insulating layer 24, and the planarization layer 27 may be an organic or inorganic material.
  • the light emitting material layer 30 includes a pixel electrode 31, a pixel defining layer 32, an organic light emitting layer 33 and a common electrode 35.
  • the pixel definition layer 32 has a plurality of opening regions spaced apart from each other.
  • the opening regions are through holes arranged at intervals on the pixel definition layer 32.
  • the opening regions are used to form red (R), green (G), or blue (B), etc.
  • the pixel electrode 31 is formed on the driving circuit layer 20, and the planarization layer 27 is formed with a via hole, and the pixel electrode 31 is connected to the drain 26 through the via hole.
  • the organic light emitting layer 33 is formed on the pixel electrode 31 in the opening area, and the common electrode 34 is formed on the organic light emitting layer 33 and covers the opening area and the non-opening area.
  • the pixel electrode 31 and the common electrode 34 can drive the organic light emitting layer 33 to emit light. .
  • the encapsulation layer 60 is arranged on the side of the light-emitting material layer 30 away from the driving circuit layer 20 to isolate water and oxygen and protect the OLED display panel.
  • the fingerprint identification unit 70 is arranged on the side of the packaging layer 60 away from the luminescent material layer 30 for receiving fingerprint information.
  • the fingerprint identification unit 70 is made of transparent glass.
  • the driving circuit layer 20 is not patterned, and the substrate 10 is formed with through holes.
  • the substrate 10 is formed with a plurality of first through holes 11 that are not in contact with each other, and a plurality of first through holes 11 are formed on the substrate 10.
  • the size of a through hole 11 may be the same or different.
  • the fingerprint is pressed on the fingerprint recognition unit 70 in the fingerprint recognition area 100, and the incident light 31 emitted by the luminescent material layer 30 passes through the encapsulation layer 60 and the fingerprint recognition unit 70 and is transmitted to the fingerprint. After the fingerprint is reflected Create a reflected light 32.
  • the driving circuit layer 20 is not patterned.
  • the reflected light 32 directly passes through the fingerprint identification unit 70, the encapsulation layer 60, the luminescent material layer 30, the drive circuit layer 20, and the buffer layer 50 in sequence, reaches the substrate 10, and passes through the plurality of first through holes 11, and reaches the sensing unit 40 .
  • the sensing unit 40 is arranged in the direction away from the drive circuit layer 20 of the substrate 10, and is used to receive the reflected light 32 reflected by the fingerprint, and analyze and compare the received information with the locally stored fingerprint information. When the stored fingerprint information is consistent, control the OLED display panel to unlock.
  • the sensing unit 40 is a sensing chip.
  • the OLED display panel further includes a protective layer 110, the protective layer 110 is disposed on the side of the substrate 10 away from the driving circuit layer 20, and the sensing unit 40 is located on the side of the protective layer 110 away from the substrate 10.
  • the protective layer 110 is formed with a plurality of second through holes 12, and the second through holes 12 correspond to the first through holes 11 one-to-one, that is, the shape, size and position of the second through holes 12 are the same as those of the first through holes. Hole 11 is the same.
  • the protective layer 110 can block the passage of stray light, and prevent the stray light from affecting the fingerprint recognition effect.
  • the protective layer 110 can also protect other layers on the substrate 10 during etching, and the material of the protective layer 110 can be silicon oxide. (SiOx), silicon nitride (SiNx), molybdenum (Mo), aluminum (Al), etc.
  • the reflected light 32 reflected by the fingerprint to the sensing unit 40 will lose part of it when passing through each film layer, and will not pass through each film layer to reach the sensing unit. 40.
  • the reflected light 32 passes through the various film layers, it loses the most when passing through the substrate 10 of the OLED display panel, which easily causes excessive loss of the reflected light 32 and affects the fingerprint recognition effect.
  • through holes are formed on the substrate 10 in the fingerprint identification area 100 to increase the light transmittance of the substrate 10, so that the reflected light 32 can pass through the substrate 10 to the sensing unit 40 more smoothly, and the fingerprint unlocking function is enhanced. effect.
  • FIG. 2 is a schematic diagram of the substrate structure of the OLED display panel provided by this embodiment of the application.
  • the substrate 10 in the fingerprint recognition area 100, includes a middle area 101 and an edge area 102, the edge area 102 surrounds the middle area 101, and the first through hole 11 is in the middle.
  • the density in the area 101 is greater than the density in the edge area 102.
  • the reflected light 32 reflected to the substrate 10 also appears denser in the middle area 101 and sparser in the edge area 102, so The density of the first through holes 11 in the middle area 101 is greater than the density in the edge area 102, which can make the reflected light 32 reflected back to the middle area 101 pass through more easily, and the fingerprint recognition effect is better.
  • a plurality of first through holes 11 are arranged at equal intervals.
  • the reflected light 32 reflected to the substrate 10 uniformly passes through the substrate 10 and reaches the sensing unit 40.
  • the fingerprint recognition area 100 is generally circular, but the present application is not limited to this, and those skilled in the art can set the shape and position of the fingerprint recognition area 100 as needed.
  • FIG. 3 it is a schematic diagram of the second structure of the OLED display panel provided by the embodiment of this application.
  • the OLED display panel includes a substrate 10, a driving circuit layer 20, a luminescent material layer 30, a sensing unit 40, a buffer layer 50, an encapsulation layer 60, and a fingerprint recognition unit 70.
  • the OLED display panel also includes a fingerprint recognition area 100, which is located in the fingerprint recognition area In 100, a through hole is formed on the substrate 10.
  • the driving circuit layer 20 is not patterned, and the substrate 10 is formed with a third through hole 13.
  • the reflected light 32 directly passes through the fingerprint identification unit 70, the encapsulation layer 60, the luminescent material layer 30, the driving circuit layer 20, and the buffer layer 50 in sequence, reaches the substrate 10, and passes through the third through hole 13 to reach the sensing unit 40.
  • the area of the third through hole 13 is greater than or equal to the area of the fingerprint identification area 100, so as to ensure that the reflected light 32 of the fingerprint passes through the substrate 10 as much as possible, which further improves Improved the light transmittance of the OLED display panel and enhanced the fingerprint unlocking effect.
  • the OLED display panel further includes a protective layer 110, the protective layer 110 is disposed on the side of the substrate 10 away from the driving circuit layer 20, and the sensing unit 40 is located on the side of the protective layer 110 away from the substrate 10.
  • a fourth through hole 14 is formed in the protective layer 110, and the fourth through hole 14 corresponds to the third through hole 13, that is, the shape, size and position of the fourth through hole 14 are the same as the third through hole 13 .
  • the protective layer 110 can block the stray light from passing through and prevent the stray light from affecting the fingerprint recognition effect.
  • the protective layer 110 can also protect other layers on the substrate 10 during etching, and the material of the protective layer 110 can be silicon oxide. (SiOx), silicon nitride (SiNx), molybdenum (Mo), aluminum (Al), etc.
  • FIG. 4 it is a schematic diagram of the third structure of the OLED display panel provided by the embodiment of this application.
  • the OLED display panel includes a substrate 10, a driving circuit layer 20, a luminescent material layer 30, a sensing unit 40, a buffer layer 50, an encapsulation layer 60, and a fingerprint recognition unit 70.
  • the OLED display panel also includes a fingerprint recognition area 100, which is located in the fingerprint recognition area In 100, a through hole is formed on the substrate 10.
  • the thin film transistor in the driving circuit layer 20 has a top gate structure, and the driving circuit layer 20 includes an active layer 21, a gate insulating layer 22, a gate layer, an interlayer insulating layer 24, a source and drain layer, and a first The planarization layer 271, the signal line layer 28, and the second planarization layer 272.
  • the active layer 21 is disposed on the side of the buffer layer 50 away from the substrate 10, the gate insulating layer 22 is formed on the side of the active layer 21 away from the buffer layer 50, and the gate layer is formed on the gate insulating layer 22 away from the active layer 21.
  • the interlayer insulating layer 24 is formed on the side of the gate layer away from the gate insulating layer 22, the source and drain layers are formed on the side of the interlayer insulating layer 24 away from the gate layer, and the first planarization layer 271 is formed on the source
  • the drain layer is on the side away from the interlayer insulating layer 24, the signal line layer 28 is formed on the side of the first planarization layer 271 away from the source and drain layers, and the second planarization layer 272 is formed on the signal line layer 28 away from the signal line layer. 28 side.
  • the driving circuit layer 20 is patterned to form a fifth through hole 15, the substrate is formed with a sixth through hole 16, and the incident light 31 emitted by the luminescent material layer 30 is reflected by the fingerprint to form a reflected light 32 Pass through the fifth through hole 15 and reach the sixth through hole 16 and the sensing unit 40 based on the small hole imaging.
  • the fifth through hole 15 is formed by the gate layer, and the other film layers are not patterned in the fingerprint recognition area 100.
  • the gate layer is patterned to form the gate 23 of the OLED display panel in the non-fingerprint recognition area, and a fifth through hole 15 is formed in the fingerprint recognition area 100.
  • the area of the fifth through hole 15 is much smaller than that of the pattern recognition area 100 .
  • the gate layer may have a multi-layer structure, for example, including a first gate layer (not shown in the figure) and a second gate layer (not shown in the figure) that are stacked.
  • the gate insulating layer 22 also includes the first gate insulating layer.
  • the first gate insulating layer is formed on the side of the active layer 21 away from the buffer layer 21, and the first gate layer is formed on the first gate insulating layer.
  • Layer away from the active layer 21, the second gate insulating layer is formed on the side of the first gate layer away from the first gate insulating layer, and the second gate layer is formed on the second gate insulating layer away from the first gate layer Side.
  • the fifth through hole 15 is formed by the first gate layer.
  • the fifth through hole 15 is formed by the second gate layer.
  • the fingerprint is pressed on the fingerprint recognition unit 70 in the fingerprint recognition area 100, and the incident light 31 emitted by the luminescent material layer 30 passes through the encapsulation layer 60 and the fingerprint recognition unit 70 and is transmitted to the fingerprint. After the fingerprint is reflected Create a reflected light 32.
  • the reflected light 32 directly passes through the fingerprint recognition unit 70, the encapsulation layer 60, and the luminescent material in sequence Layer 30, when reaching the fifth through hole 15 in the driving circuit layer 20, the image of the fingerprint is flipped, and the reflected light 32 after the flip continues to pass through the buffer layer 50, reaches the substrate 10, and passes through the sixth through hole 16. Reach the sensing unit 40.
  • the fifth through hole 15 acts as a small hole in the image of the small hole on the path of the reflected light 32, and the fifth through hole 15 is formed in the driving circuit layer 20, the distance from the substrate 10 is less than that of fingerprint recognition Therefore, after the reflected light 32 passes through the fifth through hole 15, the image of the fingerprint formed on the substrate 10 is smaller and the resolution is higher. At this time, in the fingerprint identification area 100, the fingerprint image is formed on the substrate 10
  • the area of the formed sixth through hole 16 may be smaller than the area of the fingerprint recognition area 100, which avoids the influence of the excessively large through hole on the substrate 10 and the OLED display panel.
  • the sensing unit 40 is arranged in the direction away from the drive circuit layer 20 of the substrate 10, and is used to receive the reflected light 32 reflected by the fingerprint, and analyze and compare the received information with the locally stored fingerprint information. When the stored fingerprint information is consistent, control the OLED display panel to unlock.
  • the sensing unit 40 is a sensing chip.
  • the OLED display panel further includes a protective layer 110, the protective layer 110 is disposed on the side of the substrate 10 away from the driving circuit layer 20, and the sensing unit 40 is located on the side of the protective layer 110 away from the substrate 10.
  • a seventh through hole 17 is formed in the protection layer 110, and the seventh through hole 17 corresponds to the sixth through hole 16, that is, the shape, size, and position of the seventh through hole 17 are the same as the sixth through hole 16 .
  • the protective layer 110 can block the passage of stray light, and prevent the stray light from affecting the fingerprint recognition effect.
  • the protective layer 110 can also protect other layers on the substrate 10 during etching, and the material of the protective layer 110 can be silicon oxide. (SiOx), silicon nitride (SiNx), molybdenum (Mo), aluminum (Al), etc.
  • through holes are formed on the substrate 10 in the fingerprint identification area 100 to increase the light transmittance of the substrate 10, so that the reflected light 32 can pass through the substrate 10 to the sensing unit 40 more smoothly, and the fingerprint unlocking function is enhanced. effect.
  • FIG. 5 it is a schematic diagram of the fourth structure of the OLED display panel provided by the embodiment of this application.
  • the OLED display panel includes a substrate 10, a driving circuit layer 20, a luminescent material layer 30, a sensing unit 40, a buffer layer 50, an encapsulation layer 60, and a fingerprint recognition unit 70.
  • the OLED display panel also includes a fingerprint recognition area 100, which is located in the fingerprint recognition area In 100, a through hole is formed on the substrate 10.
  • the thin film transistor in the driving circuit layer 20 has a top gate structure, and the driving circuit layer 20 includes an active layer 21, a gate insulating layer 22, a gate layer, an interlayer insulating layer 24, a source and drain layer, and a first The planarization layer 271, the signal line layer 28, and the second planarization layer 272.
  • the fifth through hole 15 is formed by a source and drain layer, and the other layers are not patterned in the fingerprint recognition area 100.
  • the source and drain layers are patterned to form the source 25 and the drain 26 of the OLED display panel in the non-fingerprint recognition area, and the fifth through hole 15 is formed in the fingerprint recognition area 100.
  • the area of the fifth through hole 15 is much smaller than the pattern. Identify the area of the area 100.
  • the fifth through hole 15 acts as a small hole in the image of the small hole on the path of the reflected light 32, and the fifth through hole 15 is formed in the driving circuit layer 20, the distance from the substrate 10 is less than that of fingerprint recognition Therefore, after the reflected light 32 passes through the fifth through hole 15, the image of the fingerprint formed on the substrate 10 is smaller and the resolution is higher. At this time, in the fingerprint identification area 100, the fingerprint image is formed on the substrate 10
  • the area of the formed sixth through hole 16 may be smaller than the area of the fingerprint recognition area 100, which avoids the influence of the excessively large through hole on the substrate 10 and the OLED display panel.
  • the OLED display panel further includes a protective layer 110, the protective layer 110 is disposed on the side of the substrate 10 away from the driving circuit layer 20, and the sensing unit 40 is located on the side of the protective layer 110 away from the substrate 10.
  • a seventh through hole 17 is formed in the protection layer 110, and the seventh through hole 17 corresponds to the sixth through hole 16, that is, the shape, size, and position of the seventh through hole 17 are the same as the sixth through hole 16 .
  • the protective layer 110 can block the passage of stray light, and prevent the stray light from affecting the fingerprint recognition effect.
  • the protective layer 110 can also protect other layers on the substrate 10 during etching, and the material of the protective layer 110 can be silicon oxide. (SiOx), silicon nitride (SiNx), molybdenum (Mo), aluminum (Al), etc.
  • through holes are formed on the substrate 10 in the fingerprint identification area 100 to increase the light transmittance of the substrate 10, so that the reflected light 32 can pass through the substrate 10 to the sensing unit 40 more smoothly, and the fingerprint unlocking function is enhanced. effect.
  • FIG. 6 it is a schematic diagram of the fifth structure of the OLED display panel provided by the embodiment of this application.
  • the OLED display panel includes a substrate 10, a driving circuit layer 20, a luminescent material layer 30, a sensing unit 40, a buffer layer 50, an encapsulation layer 60, and a fingerprint recognition unit 70.
  • the OLED display panel also includes a fingerprint recognition area 100, which is located in the fingerprint recognition area In 100, a through hole is formed on the substrate 10.
  • the thin film transistor in the driving circuit layer 20 has a top gate structure, and the driving circuit layer 20 includes an active layer 21, a gate insulating layer 22, a gate layer, an interlayer insulating layer 24, a source and drain layer, and a first The planarization layer 271, the signal line layer 28, and the second planarization layer 272.
  • the fifth through hole 15 is formed by the signal line layer 28, and the other layers are not patterned in the fingerprint recognition area 100.
  • the signal line layer 28 is connected to the power supply of the OLED display panel in the non-fingerprint recognition area, and forms a fifth through hole 15 in the fingerprint recognition area 100.
  • the area of the fifth through hole 15 is much smaller than that of the pattern recognition area 100.
  • the fifth through hole 15 acts as a small hole in the image of the small hole on the path of the reflected light 32, and the fifth through hole 15 is formed in the driving circuit layer 20, the distance from the substrate 10 is less than that of fingerprint recognition Therefore, after the reflected light 32 passes through the fifth through hole 15, the image of the fingerprint formed on the substrate 10 is smaller and the resolution is higher. At this time, in the fingerprint identification area 100, the fingerprint image is formed on the substrate 10
  • the area of the formed sixth through hole 16 may be smaller than the area of the fingerprint recognition area 100, which avoids the influence of the excessively large through hole on the substrate 10 and the OLED display panel.
  • the OLED display panel further includes a protective layer 110, the protective layer 110 is disposed on the side of the substrate 10 away from the driving circuit layer 20, and the sensing unit 40 is located on the side of the protective layer 110 away from the substrate 10.
  • a seventh through hole 17 is formed in the protection layer 110, and the seventh through hole 17 corresponds to the sixth through hole 16, that is, the shape, size, and position of the seventh through hole 17 are the same as the sixth through hole 16 .
  • the protective layer 110 can block the passage of stray light, and prevent the stray light from affecting the fingerprint recognition effect.
  • the protective layer 110 can also protect other layers on the substrate 10 during etching, and the material of the protective layer 110 can be silicon oxide. (SiOx), silicon nitride (SiNx), molybdenum (Mo), aluminum (Al), etc.
  • through holes are formed on the substrate 10 in the fingerprint identification area 100 to increase the light transmittance of the substrate 10, so that the reflected light 32 can pass through the substrate 10 to the sensing unit 40 more smoothly, and the fingerprint unlocking function is enhanced. effect.
  • the application also provides a display device including an OLED display panel.
  • the OLED display panel includes a substrate, a driving circuit layer, a light-emitting material layer, and a sensing unit.
  • the driving circuit layer is formed on one side of the substrate; the light-emitting material layer is formed on the driving circuit.
  • the side of the layer away from the substrate; the sensing unit is formed in the direction of the substrate away from the driving circuit layer to receive the light reflected by the fingerprint; wherein, in the fingerprint recognition area of the OLED display panel, the substrate is formed with through holes to emit light The light emitted by the material layer is reflected by the fingerprint and then reaches the sensing unit through the through hole.
  • the driving circuit layer is not patterned.
  • the substrate in the fingerprint recognition area, is provided with a plurality of first through holes that are not in contact with each other.
  • the substrate in the fingerprint recognition area, includes a middle area and an edge area, the edge area surrounds the middle area, and the density of the first through holes in the middle area is greater than the density in the edge area.
  • the plurality of first through holes are arranged at equal intervals.
  • the OLED display panel further includes a protective layer, the protective layer is arranged on the side of the substrate away from the driving circuit layer, in the fingerprint recognition area, the protective layer is formed with a plurality of second through holes, the second through holes One-to-one correspondence with the first through holes.
  • the substrate in the fingerprint recognition area, is formed with a third through hole.
  • the OLED display panel further includes a protective layer, the protective layer is arranged on the side of the substrate away from the driving circuit layer, in the fingerprint recognition area, the protective layer is formed with a fourth through hole, the fourth through hole and The third through hole corresponds.
  • the driving circuit layer includes a gate layer, a source and drain layer, and a signal line layer.
  • the driving circuit layer is patterned to form a fifth through hole, and the substrate is formed with a sixth through hole. Hole, the light emitted by the luminescent material layer passes through the fifth through hole after being reflected by the fingerprint, and reaches the sixth through hole and the sensing unit based on the small hole imaging.
  • the fifth via is formed by the gate layer.
  • the gate layer includes a first gate layer and a second gate layer, and the fifth through hole is formed by the first gate layer.
  • the gate layer includes a first gate layer and a second gate layer, and the fifth through hole is formed by the first gate layer.
  • the fifth through hole is formed by the source and drain layers.
  • the fifth via is formed by the signal line layer.
  • the OLED display panel further includes a protective layer, the protective layer is arranged on the side of the substrate away from the driving circuit layer, in the fingerprint recognition area, the protective layer is formed with a seventh through hole, the seventh through hole and The sixth through hole corresponds.
  • the OLED display panel includes a substrate, a driving circuit layer, a light-emitting material layer, and a sensing unit.
  • the driving circuit layer is formed on one side of the substrate; One side of the substrate; the sensing unit is formed in the direction away from the driving circuit layer of the substrate, and is used to receive the light reflected by the fingerprint; wherein, in the fingerprint recognition area of the OLED display panel, the substrate is formed with through holes, and the light-emitting material layer After being reflected by the fingerprint, the emitted light passes through the through hole to reach the sensing unit.
  • the light transmittance of the substrate in the fingerprint recognition area is increased, so that the light emitted by the luminescent material layer is reflected by the fingerprint, and the loss on the path to the sensing unit is reduced. Enhanced fingerprint recognition effect.

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Abstract

本申请提供一种OLED显示面板和显示装置，OLED显示面板包括衬底、形成在衬底一侧的驱动电路层、形成在驱动电路层远离衬底一侧的发光材料层、感应单元，感应单元形成在衬底远离驱动电路层的方向，用于接收指纹反射的光线；在OLED显示面板的指纹识别区内衬底形成有通孔，发光材料层发出的光线经由指纹反射后，穿过通孔到达感应单元。

Description

OLED显示面板和显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种OLED显示面板和显示装置。
 背景技术
近年来，光学式屏下指纹识别技术成为近年最热门的前沿技术研发课题，对应到OLED显示器件上，是通过手指触摸屏幕特定区域时，利用OLED发出的光线经手指反射后，穿过OLED显示面板的各个膜层，到达显示面板背面放置的感应IC，经过感应IC的比对识别出使用者的指纹信息，来解锁OLED显示器件。
但是，OLED显示面板是经过多膜层工艺实现的，光线通过每一层均会损失掉一部分，最终到达显示面板背面的感应IC时光线损失过大，造成指纹识别效果不佳。
因此，现有的OLED显示面板存在透光率不高的技术问题，需要改进。
 技术问题
本申请提供一种OLED显示面板和显示装置，以缓解现有的OLED显示面板透光率不高的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种OLED显示面板，包括：
衬底；
驱动电路层，形成在所述衬底的一侧；
发光材料层，形成在所述驱动电路层远离所述衬底的一侧；
感应单元，设置在所述衬底远离所述驱动电路层的方向上，用于接收指纹反射的光线；
其中，在所述OLED显示面板的指纹识别区内，所述衬底形成有通孔，所述发光材料层发出的光线经由指纹反射后，穿过所述通孔到达所述感应单元。
在本申请的OLED显示面板中，在所述指纹识别区内，所述驱动电路层未形成图案。
在本申请的OLED显示面板中，在所述指纹识别区内，所述衬底设置有多个互相不接触的第一通孔。
在本申请的OLED显示面板中，在所述指纹识别区内，所述衬底包括中间区域和边缘区域，所述边缘区域围绕所述中间区域，所述第一通孔在所述中间区域内的密度大于在所述边缘区域的密度。
在本申请的OLED显示面板中，所述多个第一通孔等间距设置。
在本申请的OLED显示面板中，所述OLED显示面板还包括保护层，所述保护层设置在所述衬底远离所述驱动电路层的一侧，在所述指纹识别区内，所述保护层形成有多个第二通孔，所述第二通孔与所述第一通孔一一对应。
在本申请的OLED显示面板中，在所述指纹识别区内，所述衬底形成有一个第三通孔。
在本申请的OLED显示面板中，所述OLED显示面板还包括保护层，所述保护层设置在所述衬底远离所述驱动电路层的一侧，在所述指纹识别区内，所述保护层形成有一个第四通孔，所述第四通孔与所述第三通孔对应。
在本申请的OLED显示面板中，所述驱动电路层包括栅极层、源漏极层、信号线层，在所述指纹识别区内，所述驱动电路层图案化形成一个第五通孔，所述衬底形成有一个第六通孔，所述发光材料层发出的光线经由指纹反射后穿过所述第五通孔，基于小孔成像到达所述第六通孔和所述感应单元。
在本申请的OLED显示面板中，所述第五通孔由所述栅极层形成。
在本申请的OLED显示面板中，所述栅极层包括第一栅极层和第二栅极层，所述第五通孔由所述第一栅极层形成。
在本申请的OLED显示面板中，所述栅极层包括第一栅极层和第二栅极层，所述第五通孔由所述第二栅极层形成。
在本申请的OLED显示面板中，所述第五通孔由所述源漏极层形成。
在本申请的OLED显示面板中，所述第五通孔由所述信号线层形成。
在本申请的OLED显示面板中，所述OLED显示面板还包括保护层，所述保护层设置在所述衬底远离所述驱动电路层的一侧，在所述指纹识别区内，所述保护层形成有一个第七通孔，所述第七通孔与所述第六通孔对应。
本申请还提供一种显示装置，包括OLED显示面板，所述OLED显示面板包括：
衬底；
驱动电路层，形成在所述衬底的一侧；
发光材料层，形成在所述驱动电路层远离所述衬底的一侧；
感应单元，形成在所述衬底远离所述驱动电路层的方向上，用于接收指纹反射的光线；
其中，在所述OLED显示面板的指纹识别区内，所述衬底形成有通孔，所述发光材料层发出的光线经由指纹反射后，穿过所述通孔到达所述感应单元。
在本申请的显示装置中，在所述指纹识别区内，所述驱动电路层未形成图案。
在本申请的显示装置中，在所述指纹识别区内，所述衬底设置有多个互相不接触的第一通孔。
在本申请的显示装置中，在所述指纹识别区内，所述衬底形成有一个第三通孔。
在本申请的显示装置中，所述驱动电路层包括栅极层、源漏极层、信号线层，在所述指纹识别区内，所述驱动电路层图案化形成一个第五通孔，所述衬底形成有一个第六通孔，所述发光材料层发出的光线经由指纹反射后穿过所述第五通孔，基于小孔成像到达所述第六通孔和所述感应单元。
 有益效果
本申请提供一种OLED显示面板和显示装置，OLED显示面板包括衬底、驱动电路层、发光材料层以及感应单元，所述驱动电路层形成在所述衬底的一侧；所述发光材料层形成在所述驱动电路层远离所述衬底的一侧；所述感应单元形成在所述衬底远离所述驱动电路层的方向上，用于接收指纹反射的光线；其中，在所述OLED显示面板的指纹识别区内，所述衬底形成有通孔，所述发光材料层发出的光线经由指纹反射后，穿过所述通孔到达所述感应单元。通过将衬底在指纹识别区内形成通孔，增大了衬底在指纹识别区内的透光率，使得发光材料层发出的光线经由指纹反射，在到达感应单元的路径上损失减小，增强了指纹识别效果。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的OLED显示面板的第一种结构示意图；
图2为本申请实施例提供的OLED显示面板的衬底结构示意图；
图3为本申请实施例提供的OLED显示面板的第二种结构示意图；
图4为本申请实施例提供的OLED显示面板的第三种结构示意图；
图5为本申请实施例提供的OLED显示面板的第四种结构示意图；
图6为本申请实施例提供的OLED显示面板的第五种结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请提供一种OLED显示面板和显示装置，以缓解现有的OLED显示面板透光率不高的技术问题。
如图1所示，为本申请实施例提供的OLED显示面板的第一种结构示意图。OLED显示面板包括衬底10、驱动电路层20、发光材料层30、感应单元40，以及缓冲层50、封装层60、指纹识别单元70，OLED显示面板还包括指纹识别区100，在指纹识别区100内，衬底10上形成有通孔。
衬底10通常为玻璃基板或柔性基板，在本实施例中，衬底10为柔性基板，材质为聚酰亚胺。
缓冲层50形成在衬底10的一侧，当衬底10的表面相对不平 坦时，缓冲层50可以改善衬底10的表面平整度。根据衬底10的类型，可以在衬底10上设置一个或多个缓冲层50，或者可以不设置缓冲层50。缓冲层115可以是有机材料，例如光致抗蚀剂、聚丙烯酰类树脂、聚酰亚胺类树脂、聚酰胺类树脂、硅氧烷类树脂、丙烯酰类树脂和环氧类树脂等中的至少一种，也可以是无机材料，例如氧化硅(SiOx)、氮化硅(SiNx)、氮氧化硅(SiOxNy)、碳氧化硅 (SiOxCy)、氮碳化硅(SiCxNy)、氧化铝(AlOx)、氮化铝(AlNx)、氧化钽(TaOx)、氧化铪(HfOx)、氧 化锆(ZrOx)和氧化钛(TiOx)等中的至少一种。
驱动电路层20形成在缓冲层50远离衬底10的一侧，在本实施例中，驱动电路层20中薄膜晶体管为顶栅结构，驱动电路层20包括有源层21、栅绝缘层22、栅极层、层间绝缘层24、源漏极层、以及平坦化层27。
有源层21设置在缓冲层50远离衬底10的一侧，有源层21的材料可以是氧化物半导体、无机半导体或有机半导体等，例如可以包括氧化锌(ZnOx)、氧化镓(GaOx)、TiOx、氧化锡(SnOx)氧化铟(InOx)、氧化铟镓(IGO)、氧化铟锌(IZO)、氧化铟锡(ITO)、氧化镓锌(GZO)、 氧化锌镁(ZMO)、氧化锌锡(ZTO)、氧化锌锆(ZnZrxOy)、氧化铟镓锌(IGZO)、氧化铟锌锡 (IZTO)、氧化铟镓铪(IGHO)、氧化锡铝锌(TAZO)、氧化铟镓锡(IGTO)等中的至少一种。
栅绝缘层22形成在有源层21远离缓冲层50的一侧，栅绝缘层22可以包括有机材料或无机材料。
栅极层形成在栅绝缘层22远离有源层21的一侧，图案化形成栅极23，栅极23的材料可以是金属、金属合金、金属氮化物、导电金属氧化物、透明导电材料等，例如金(Au)、银(Ag)、铝（Al）、铝合金、氮化铝(AlNx)、银合金、钨(W)、氮化钨(WNx)、铜(Cu)、铜合金、镍(Ni)、铬(Cr)、氮化铬(CrNx)、 钼(Mo)、钼合金、Ti、氮化钛(TiNx)、铂(Pt)、钽(Ta)、氮化钽(TaNx)、钕(Nd)、钪(Sc)、氧化锶钌(SRO)、氧化锌(ZnOx)、SnOx、InOx、GaOx、ITO、IZO等中的至少一种。
在一种实施例中，栅极23可以具有多层结构，例如包括层叠设置的第一栅极（图未示出）和第二栅极（图未示出），此时栅绝缘层22也包括第一栅绝缘层（图未示出）和第二栅绝缘层（图未示出），第一栅绝缘层形成在有源层21远离缓冲层21的一侧，第一栅极形成在第一栅绝缘层远离有源层21的一侧，第二栅绝缘层形成在第一栅极远离第一栅绝缘层的一侧，第二栅极形成在第二栅绝缘层远离第一栅极的一侧。
层间绝缘层24形成在栅极23远离栅绝缘层22的一侧，层间绝缘层24的材料可以是氧化硅(SiOx)、氮化硅(SiNx)、氮氧化硅(SiOxNy)、碳氧化硅(SiOxCy)、碳氮化硅(SiCxNy)、氧化铪(HfOx)、氧化铝(AlOx)、氧化锆(ZrOx)、氧化钛(TiOx)和氧化钽(TaOx)中的至少一种。
源漏极层形成在层间绝缘层24远离栅极23的一侧，图案化形成源极25和漏极26，源极25和漏极26的材料可以是金属、合金、金属氮化物、导电性金属氧化物或透明导电材料，例如可以包括铝(Al)、铝合金、氮化铝(AlNx)、银(Ag)、银合金、钨(W)、氮化钨(WNx)、铜(Cu)、铜合金、镍(Ni)、铬(Cr)、氮化铬(CrNx)、钼(Mo)、钼合金、钛(Ti)、氮化钛(TiNx)、铂(Pt)、钽(Ta)、氮化钽(TaNx)、钕(Nd)、钪(Sc)、锶钌氧化物(SRO)、氧化锌(ZnOx)、铟锡氧化物(ITO)、氧化锡(SnOx)、氧化铟(InOx)、氧化镓(GaOx)和铟锌氧化物(IZO)中的至少一种。
有源层21包括对应源极25的源极区、对应漏极26的漏极区、以及位于源极区和漏极区之间的沟道区（图均未示出）。在源极区内，栅绝缘层23和层间绝缘层24形成有过孔，源极25通过该过孔与有源层21连接；在漏极区内，栅绝缘层23和层间绝缘层24也形成有过孔，漏极26通过该过孔与有源层21连接。
平坦化层27形成在源极25和漏极26远离层间绝缘层24的一侧，平坦化层27可以是有机或无机材料。
发光材料层30包括像素电极31、像素定义层32、有机发光层33和公共电极35。
像素定义层32具有相互间隔的多个开口区，开口区为间隔设置于像素定义层32上的通孔，开口区用于对应形成红(R)、绿(G)、或蓝(B)等像素区域，在每个开口区内，像素电极31形成在驱动电路层20上，且平坦化层27形成有过孔，像素电极31通过该过孔与漏极26连接。
有机发光层33形成在开口区内的像素电极31上，公共电极34形成在有机发光层33上，且覆盖开口区和非开口区部分，像素电极31和公共电极34可以驱动有机发光层33发光。
封装层60设置在发光材料层30远离驱动电路层20的一侧，用于隔绝水氧，保护OLED显示面板。
指纹识别单元70设置在封装层60远离发光材料层30的一侧，用于接收指纹信息，在一种实施例中，指纹识别单元70为透明玻璃。
在指纹识别区100内，驱动电路层20未形成图案，衬底10形成有通孔，在本实施例中，衬底10上形成有多个互相不接触的第一通孔11，多个第一通孔11的大小可以相同，也可以不同。
当需要进行指纹识别时，指纹按压在指纹识别区100内的指纹识别单元70上，发光材料层30发出的入射光线31穿过封装层60和指纹识别单元70，传递至指纹处，指纹反射后形成反射光线32。
由于驱动电路层20未形成图案。反射光线32直接依次穿过指纹识别单元70、封装层60、发光材料层30、驱动电路层20、缓冲层50，到达衬底10，并穿过多个第一通孔11，到达感应单元40。
感应单元40设置在衬底10远离驱动电路层20的方向上，用于接收指纹反射的反射光线32，并将接收到的信息与本地存储的指纹信息进行分析对比，在接收到的信息与本地存储的指纹信息一致时，控制OLED显示面板解锁。
在一种实施例中，感应单元40为感应芯片。
在一种实施例中，OLED显示面板还包括保护层110，保护层110设置在衬底10远离驱动电路层20的一侧，感应单元40位于保护层110远离衬底10的一侧，在指纹识别区100内，保护层110形成有多个第二通孔12，第二通孔12与第一通孔11一一对应，即第二通孔12的形状、大小和位置均与第一通孔11相同。
在反射光线32穿过第一通孔11到达感应单元40时，保护层110可以阻挡杂散光线通过，防止杂散光线影响指纹识别效果。同时，由于第一通孔11和第二通孔12采用蚀刻方式形成，在蚀刻时，保护层110也可起到保护衬底10上其他膜层的作用，保护层110的材料可以为氧化硅(SiOx)、氮化硅(SiNx)、钼（Mo）和铝（Al）等。
在现有技术中，由于OLED显示面板为多膜层结构，指纹反射至感应单元40的反射光线32在通过各膜层时，均会损失掉一部分，不会全部穿透各个膜层到达感应单元40。反射光线32在经过各膜层时，在透过OLED显示面板的衬底10时损失最多，易造成反射光线32损失过大影响指纹识别效果。
本申请通过在指纹识别区100内的衬底10上形成通孔，增大了衬底10的透光率，使得反射光线32更加顺利地通过衬底10到达感应单元40，增强了指纹解锁的效果。
在指纹识别区100内，第一通孔11的设置方式有多种，如图2所示，为本申请实施例提供的OLED显示面板的衬底结构示意图。
在一种实施例中，如图2中的a所示，在指纹识别区100内，衬底10包括中间区域101和边缘区域102，边缘区域102围绕中间区域101，第一通孔11在中间区域101内的密度大于在边缘区域102的密度。指纹在按压到指纹识别单元70上时，由于指纹在中间区域更加复杂和密集，反射至衬底10处的反射光线32也呈现在中间区域101较密，在边缘区域102较疏的情况，因此第一通孔11在中间区域101内的密度大于在边缘区域102的密度，可以使反射回中间区域101的反射光线32更加容易透过，指纹识别效果更好。
在一种实施例中，如图2中的b所示，在指纹识别区100内，多个第一通孔11等间距设置。反射至衬底10处的反射光线32均匀地透过衬底10，到达感应单元40。
需要说明的是，指纹识别区100通常为圆形，但本申请不以此为限，本领域的技术人员可根据需要设置指纹识别区100的形状和位置。
如图3所示，为本申请实施例提供的OLED显示面板的第二种结构示意图。OLED显示面板包括衬底10、驱动电路层20、发光材料层30、感应单元40，以及缓冲层50、封装层60、指纹识别单元70，OLED显示面板还包括指纹识别区100，在指纹识别区100内，衬底10上形成有通孔。
在本实施例中，在指纹识别区100内，驱动电路层20未形成图案，衬底10形成有一个第三通孔13。反射光线32直接依次穿过指纹识别单元70、封装层60、发光材料层30、驱动电路层20、缓冲层50，到达衬底10，并穿过第三通孔13，到达感应单元40。
在一种实施例中，第三通孔13的面积大于或等于指纹识别区100的面积，这样可以保证指纹的反射光线32在穿过衬底10时，能尽可能多的透过，进一步提高了OLED显示面板的透光率，增强了指纹解锁效果。
在一种实施例中，OLED显示面板还包括保护层110，保护层110设置在衬底10远离驱动电路层20的一侧，感应单元40位于保护层110远离衬底10的一侧，在指纹识别区100内，保护层110形成有一个第四通孔14，第四通孔14与第三通孔13对应，即第四通孔14的形状、大小和位置均与第三通孔13相同。
在反射光线32穿过第三通孔13到达感应单元40时，保护层110可以阻挡杂散光线通过，防止杂散光线影响指纹识别效果。同时，由于第三通孔13和第四通孔14采用蚀刻方式形成，在蚀刻时，保护层110也可起到保护衬底10上其他膜层的作用，保护层110的材料可以为氧化硅(SiOx)、氮化硅(SiNx)、钼（Mo）和铝（Al）等。
如图4所示，为本申请实施例提供的OLED显示面板的第三种结构示意图。OLED显示面板包括衬底10、驱动电路层20、发光材料层30、感应单元40，以及缓冲层50、封装层60、指纹识别单元70，OLED显示面板还包括指纹识别区100，在指纹识别区100内，衬底10上形成有通孔。
在本实施例中，驱动电路层20中薄膜晶体管为顶栅结构，驱动电路层20包括有源层21、栅绝缘层22、栅极层、层间绝缘层24、源漏极层、第一平坦化层271、信号线层28、以及第二平坦化层272。
有源层21设置在缓冲层50远离衬底10的一侧，栅绝缘层22形成在有源层21远离缓冲层50的一侧，栅极层形成在栅绝缘层22远离有源层21的一侧，层间绝缘层24形成在栅极层远离栅绝缘层22的一侧，源漏极层形成在层间绝缘层24远离栅极层的一侧，第一平坦化层271形成在源漏极层远离层间绝缘层24的一侧，信号线层28形成在第一平坦化层271远离源漏极层的一侧，第二平坦化层272形成在信号线层28远离信号线层28的一侧。
在指纹识别区100内，驱动电路层20图案化形成一个第五通孔15，衬底形成有一个第六通孔16，发光材料层30发出的入射光线31经由指纹反射后形成的反射光线32穿过第五通孔15，基于小孔成像到达第六通孔16和感应单元40。
在本实施例中，第五通孔15由栅极层形成，其他各膜层在指纹识别区100内均未形成图案。栅极层经图案化，在非指纹识别区内形成OLED显示面板的栅极23，在指纹识别区100内形成第五通孔15，第五通孔15的面积远小于纹识别区100的面积。
栅极层可以具有多层结构，例如包括层叠设置的第一栅极层（图未示出）和第二栅极层（图未示出），此时栅绝缘层22也包括第一栅绝缘层（图未示出）和第二栅绝缘层（图未示出），第一栅绝缘层形成在有源层21远离缓冲层21的一侧，第一栅极层形成在第一栅绝缘层远离有源层21的一侧，第二栅绝缘层形成在第一栅极层远离第一栅绝缘层的一侧，第二栅极层形成在第二栅绝缘层远离第一栅极层的一侧。
在一种实施例中，第五通孔15由第一栅极层形成。
在一种实施例中，第五通孔15由第二栅极层形成。
当需要进行指纹识别时，指纹按压在指纹识别区100内的指纹识别单元70上，发光材料层30发出的入射光线31穿过封装层60和指纹识别单元70，传递至指纹处，指纹反射后形成反射光线32。
由于驱动电路层20中图案化形成有第五通孔15，且第五通孔15的面积小于纹识别区100的面积，反射光线32直接依次穿过指纹识别单元70、封装层60、发光材料层30，到达驱动电路层20中的第五通孔15时，会将指纹的图像进行翻转，翻转后的反射光线32继续穿过缓冲层50，到达衬底10，并穿过第六通孔16，到达感应单元40。
由于第五通孔15在反射光线32传播的路径上，起到小孔成像中小孔的作用，且第五通孔15形成在驱动电路层20中，与衬底10的距离小于与指纹识别单元70的距离，因此反射光线32在穿过第五通孔15后，在衬底10上形成的指纹的图像较小，清晰度较高，此时在指纹识别区100内，衬底10上形成的第六通孔16的面积可以小于指纹识别区100的面积，避免了通孔过大对衬底10以及OLED显示面板造成影响。
感应单元40设置在衬底10远离驱动电路层20的方向上，用于接收指纹反射的反射光线32，并将接收到的信息与本地存储的指纹信息进行分析对比，在接收到的信息与本地存储的指纹信息一致时，控制OLED显示面板解锁。
在一种实施例中，感应单元40为感应芯片。
在一种实施例中，OLED显示面板还包括保护层110，保护层110设置在衬底10远离驱动电路层20的一侧，感应单元40位于保护层110远离衬底10的一侧，在指纹识别区100内，保护层110形成有一个第七通孔17，第七通孔17与第六通孔16对应，即第七通孔17的形状、大小和位置均与第六通孔16相同。
在反射光线32穿过第一通孔11到达感应单元40时，保护层110可以阻挡杂散光线通过，防止杂散光线影响指纹识别效果。同时，由于第六通孔16和第七通孔17采用蚀刻方式形成，在蚀刻时，保护层110也可起到保护衬底10上其他膜层的作用，保护层110的材料可以为氧化硅(SiOx)、氮化硅(SiNx)、钼（Mo）和铝（Al）等。
本申请通过在指纹识别区100内的衬底10上形成通孔，增大了衬底10的透光率，使得反射光线32更加顺利地通过衬底10到达感应单元40，增强了指纹解锁的效果。
如图5所示，为本申请实施例提供的OLED显示面板的第四种结构示意图。OLED显示面板包括衬底10、驱动电路层20、发光材料层30、感应单元40，以及缓冲层50、封装层60、指纹识别单元70，OLED显示面板还包括指纹识别区100，在指纹识别区100内，衬底10上形成有通孔。
在本实施例中，驱动电路层20中薄膜晶体管为顶栅结构，驱动电路层20包括有源层21、栅绝缘层22、栅极层、层间绝缘层24、源漏极层、第一平坦化层271、信号线层28、以及第二平坦化层272。
与图4中的结构不同之处在于，在本实施例中，第五通孔15由源漏极层形成，其他各膜层在指纹识别区100内均未形成图案。源漏极层经图案化，在非指纹识别区内形成OLED显示面板的源极25和漏极26，在指纹识别区100内形成第五通孔15，第五通孔15的面积远小于纹识别区100的面积。
由于第五通孔15在反射光线32传播的路径上，起到小孔成像中小孔的作用，且第五通孔15形成在驱动电路层20中，与衬底10的距离小于与指纹识别单元70的距离，因此反射光线32在穿过第五通孔15后，在衬底10上形成的指纹的图像较小，清晰度较高，此时在指纹识别区100内，衬底10上形成的第六通孔16的面积可以小于指纹识别区100的面积，避免了通孔过大对衬底10以及OLED显示面板造成影响。
在一种实施例中，OLED显示面板还包括保护层110，保护层110设置在衬底10远离驱动电路层20的一侧，感应单元40位于保护层110远离衬底10的一侧，在指纹识别区100内，保护层110形成有一个第七通孔17，第七通孔17与第六通孔16对应，即第七通孔17的形状、大小和位置均与第六通孔16相同。
在反射光线32穿过第一通孔11到达感应单元40时，保护层110可以阻挡杂散光线通过，防止杂散光线影响指纹识别效果。同时，由于第六通孔16和第七通孔17采用蚀刻方式形成，在蚀刻时，保护层110也可起到保护衬底10上其他膜层的作用，保护层110的材料可以为氧化硅(SiOx)、氮化硅(SiNx)、钼（Mo）和铝（Al）等。
本申请通过在指纹识别区100内的衬底10上形成通孔，增大了衬底10的透光率，使得反射光线32更加顺利地通过衬底10到达感应单元40，增强了指纹解锁的效果。
如图6所示，为本申请实施例提供的OLED显示面板的第五种结构示意图。OLED显示面板包括衬底10、驱动电路层20、发光材料层30、感应单元40，以及缓冲层50、封装层60、指纹识别单元70，OLED显示面板还包括指纹识别区100，在指纹识别区100内，衬底10上形成有通孔。
在本实施例中，驱动电路层20中薄膜晶体管为顶栅结构，驱动电路层20包括有源层21、栅绝缘层22、栅极层、层间绝缘层24、源漏极层、第一平坦化层271、信号线层28、以及第二平坦化层272。
与图4中的结构不同之处在于，在本实施例中，第五通孔15由信号线层28形成，其他各膜层在指纹识别区100内均未形成图案。信号线层28在非指纹识别区内，与OLED显示面板的电源连接，在指纹识别区100内形成第五通孔15，第五通孔15的面积远小于纹识别区100的面积。
由于第五通孔15在反射光线32传播的路径上，起到小孔成像中小孔的作用，且第五通孔15形成在驱动电路层20中，与衬底10的距离小于与指纹识别单元70的距离，因此反射光线32在穿过第五通孔15后，在衬底10上形成的指纹的图像较小，清晰度较高，此时在指纹识别区100内，衬底10上形成的第六通孔16的面积可以小于指纹识别区100的面积，避免了通孔过大对衬底10以及OLED显示面板造成影响。
在一种实施例中，OLED显示面板还包括保护层110，保护层110设置在衬底10远离驱动电路层20的一侧，感应单元40位于保护层110远离衬底10的一侧，在指纹识别区100内，保护层110形成有一个第七通孔17，第七通孔17与第六通孔16对应，即第七通孔17的形状、大小和位置均与第六通孔16相同。
在反射光线32穿过第一通孔11到达感应单元40时，保护层110可以阻挡杂散光线通过，防止杂散光线影响指纹识别效果。同时，由于第六通孔16和第七通孔17采用蚀刻方式形成，在蚀刻时，保护层110也可起到保护衬底10上其他膜层的作用，保护层110的材料可以为氧化硅(SiOx)、氮化硅(SiNx)、钼（Mo）和铝（Al）等。
本申请通过在指纹识别区100内的衬底10上形成通孔，增大了衬底10的透光率，使得反射光线32更加顺利地通过衬底10到达感应单元40，增强了指纹解锁的效果。
本申请还提供一种显示装置，包括OLED显示面板，OLED显示面板包括衬底、驱动电路层、发光材料层以及感应单元，驱动电路层形成在衬底的一侧；发光材料层形成在驱动电路层远离衬底的一侧；感应单元形成在衬底远离驱动电路层的方向上，用于接收指纹反射的光线；其中，在OLED显示面板的指纹识别区内，衬底形成有通孔，发光材料层发出的光线经由指纹反射后，穿过通孔到达感应单元。
在一种实施例中，在指纹识别区内，驱动电路层未形成图案。
在一种实施例中，在指纹识别区内，衬底设置有多个互相不接触的第一通孔。
在一种实施例中，在指纹识别区内，衬底包括中间区域和边缘区域，边缘区域围绕中间区域，第一通孔在中间区域内的密度大于在边缘区域的密度。
在一种实施例中，多个第一通孔等间距设置。
在一种实施例中，OLED显示面板还包括保护层，保护层设置在衬底远离驱动电路层的一侧，在指纹识别区内，保护层形成有多个第二通孔，第二通孔与第一通孔一一对应。
在一种实施例中，在指纹识别区内，衬底形成有一个第三通孔。
在一种实施例中，OLED显示面板还包括保护层，保护层设置在衬底远离驱动电路层的一侧，在指纹识别区内，保护层形成有一个第四通孔，第四通孔与第三通孔对应。
在一种实施例中，驱动电路层包括栅极层、源漏极层、信号线层，在指纹识别区内，驱动电路层图案化形成一个第五通孔，衬底形成有一个第六通孔，发光材料层发出的光线经由指纹反射后穿过第五通孔，基于小孔成像到达第六通孔和感应单元。
在一种实施例中，第五通孔由栅极层形成。
在一种实施例中，栅极层包括第一栅极层和第二栅极层，第五通孔由第一栅极层形成。
在一种实施例中，栅极层包括第一栅极层和第二栅极层，第五通孔由第一栅极层形成。
在一种实施例中，第五通孔由源漏极层形成。
在一种实施例中，第五通孔由信号线层形成。
在一种实施例中，OLED显示面板还包括保护层，保护层设置在衬底远离驱动电路层的一侧，在指纹识别区内，保护层形成有一个第七通孔，第七通孔与第六通孔对应。
根据上述实施例可知：
本申请提供一种OLED显示面板和显示装置，OLED显示面板包括衬底、驱动电路层、发光材料层以及感应单元，驱动电路层形成在衬底的一侧；发光材料层形成在驱动电路层远离衬底的一侧；感应单元形成在衬底远离驱动电路层的方向上，用于接收指纹反射的光线；其中，在OLED显示面板的指纹识别区内，衬底形成有通孔，发光材料层发出的光线经由指纹反射后，穿过通孔到达感应单元。通过将衬底在指纹识别区内形成通孔，增大了衬底在指纹识别区内的透光率，使得发光材料层发出的光线经由指纹反射，在到达感应单元的路径上损失减小，增强了指纹识别效果。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，其包括：
    衬底；
    驱动电路层，形成在所述衬底的一侧；
    发光材料层，形成在所述驱动电路层远离所述衬底的一侧；
    感应单元，设置在所述衬底远离所述驱动电路层的方向上，用于接收指纹反射的光线；
    其中，在所述OLED显示面板的指纹识别区内，所述衬底形成有通孔，所述发光材料层发出的光线经由指纹反射后，穿过所述通孔到达所述感应单元。
  2. 如权利要求1所述的OLED显示面板，其中，在所述指纹识别区内，所述驱动电路层未形成图案。
  3. 如权利要求2所述的OLED显示面板，其中，在所述指纹识别区内，所述衬底设置有多个互相不接触的第一通孔。
  4. 如权利要求3所述的OLED显示面板，其中，在所述指纹识别区内，所述衬底包括中间区域和边缘区域，所述边缘区域围绕所述中间区域，所述第一通孔在所述中间区域内的密度大于在所述边缘区域的密度。
  5. 如权利要求3所述的OLED显示面板，其中，所述多个第一通孔等间距设置。
  6. 如权利要求3所述的OLED显示面板，其中，所述OLED显示面板还包括保护层，所述保护层设置在所述衬底远离所述驱动电路层的一侧，在所述指纹识别区内，所述保护层形成有多个第二通孔，所述第二通孔与所述第一通孔一一对应。
  7. 如权利要求2所述的OLED显示面板，其中，在所述指纹识别区内，所述衬底形成有一个第三通孔。
  8. 如权利要求7所述的OLED显示面板，其中，所述OLED显示面板还包括保护层，所述保护层设置在所述衬底远离所述驱动电路层的一侧，在所述指纹识别区内，所述保护层形成有一个第四通孔，所述第四通孔与所述第三通孔对应。
  9. 如权利要求1所述的OLED显示面板，其中，所述驱动电路层包括栅极层、源漏极层、信号线层，在所述指纹识别区内，所述驱动电路层图案化形成一个第五通孔，所述衬底形成有一个第六通孔，所述发光材料层发出的光线经由指纹反射后穿过所述第五通孔，基于小孔成像到达所述第六通孔和所述感应单元。
  10. 如权利要求9所述的OLED显示面板，其中，所述第五通孔由所述栅极层形成。
  11. 如权利要求9所述的OLED显示面板，其中，所述栅极层包括第一栅极层和第二栅极层，所述第五通孔由所述第一栅极层形成。
  12. 如权利要求9所述的OLED显示面板，其中，所述栅极层包括第一栅极层和第二栅极层，所述第五通孔由所述第二栅极层形成。
  13. 如权利要求9所述的OLED显示面板，其中，所述第五通孔由所述源漏极层形成。
  14. 如权利要求9所述的OLED显示面板，其中，所述第五通孔由所述信号线层形成。
  15. 如权利要求9所述的OLED显示面板，其中，所述OLED显示面板还包括保护层，所述保护层设置在所述衬底远离所述驱动电路层的一侧，在所述指纹识别区内，所述保护层形成有一个第七通孔，所述第七通孔与所述第六通孔对应。
  16. 一种显示装置，其包括OLED显示面板，所述OLED显示面板包括：
    衬底；
    驱动电路层，形成在所述衬底的一侧；
    发光材料层，形成在所述驱动电路层远离所述衬底的一侧；
    感应单元，形成在所述衬底远离所述驱动电路层的方向上，用于接收指纹反射的光线；
    其中，在所述OLED显示面板的指纹识别区内，所述衬底形成有通孔，所述发光材料层发出的光线经由指纹反射后，穿过所述通孔到达所述感应单元。
  17. 如权利要求16所述的显示装置，其中，在所述指纹识别区内，所述驱动电路层未形成图案。
  18. 如权利要求17所述的显示装置，其中，在所述指纹识别区内，所述衬底设置有多个互相不接触的第一通孔。
  19. 如权利要求17所述的显示装置，其中，在所述指纹识别区内，所述衬底形成有一个第三通孔。
  20. 如权利要求16所述的显示装置，其中，所述驱动电路层包括栅极层、源漏极层、信号线层，在所述指纹识别区内，所述驱动电路层图案化形成一个第五通孔，所述衬底形成有一个第六通孔，所述发光材料层发出的光线经由指纹反射后穿过所述第五通孔，基于小孔成像到达所述第六通孔和所述感应单元。
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