WO2020218524A1 - Dispositif à semi-conducteur ayant une structure en dolmen et son procédé de fabrication, et film stratifié pour former une pièce de support et son procédé de fabrication - Google Patents

Dispositif à semi-conducteur ayant une structure en dolmen et son procédé de fabrication, et film stratifié pour former une pièce de support et son procédé de fabrication Download PDF

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Publication number
WO2020218524A1
WO2020218524A1 PCT/JP2020/017729 JP2020017729W WO2020218524A1 WO 2020218524 A1 WO2020218524 A1 WO 2020218524A1 JP 2020017729 W JP2020017729 W JP 2020017729W WO 2020218524 A1 WO2020218524 A1 WO 2020218524A1
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Prior art keywords
chip
piece
support piece
adhesive
forming
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PCT/JP2020/017729
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English (en)
Japanese (ja)
Inventor
達也 矢羽田
紘平 谷口
慎太郎 橋本
義信 尾崎
圭 板垣
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日立化成株式会社
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Priority to KR1020217028917A priority Critical patent/KR20220002258A/ko
Priority to CN202080020993.2A priority patent/CN113574664A/zh
Priority to SG11202110094XA priority patent/SG11202110094XA/en
Priority to JP2021516269A priority patent/JPWO2020218524A1/ja
Publication of WO2020218524A1 publication Critical patent/WO2020218524A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present disclosure is supported and first by a substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate and around the first chip, and a plurality of support pieces.
  • the present invention relates to a semiconductor device having a dolmen structure including a second chip arranged so as to cover the chip.
  • the present disclosure also relates to a method for manufacturing a semiconductor device having a dolmen structure, a laminated film for forming a support piece, and a method for manufacturing the same.
  • a dolmen (dolmen) is a kind of stone tomb, and has a plurality of pillar stones and a plate-shaped rock placed on the pillar stone.
  • a support piece corresponds to a "dolmen"
  • a second chip corresponds to a "plate-shaped rock”.
  • Patent Document 1 discloses a semiconductor die assembly including a controller die and a memory die supported by a support member on the controller die. It can be said that the semiconductor assembly 100 illustrated in FIG. 1A of Patent Document 1 has a dolmen structure.
  • the semiconductor assembly 100 includes the package substrate 102, the controller dies 103 arranged on the surface of the package substrate 102, the memory dies 106a and 106b arranged above the controller dies 103, and the support members 130a and 130b for supporting the memory dies 106a. To be equipped.
  • Patent Document 1 discloses that a semiconductor material such as silicon can be used as a support member (support piece), and more specifically, a fragment of the semiconductor material obtained by dicing a semiconductor wafer can be used (Patent Document 1). 1 [0012], [0014] and FIG. 2).
  • a support piece for a dolmen structure using a semiconductor wafer for example, the following steps are required as in the case of manufacturing a normal semiconductor chip. (1) A process of attaching a back grind tape to a semiconductor wafer (2) A process of back grinding a semiconductor wafer (3) An adhesive layer and an adhesive layer are applied to a dicing ring and a semiconductor wafer after back grinding arranged therein.
  • the present disclosure provides a method for manufacturing a semiconductor device that simplifies the process of manufacturing a support piece in the manufacturing process of a semiconductor device having a dolmen structure and can achieve excellent pick-up performance of the support piece.
  • the present disclosure also provides a semiconductor device having a dolmen structure, a laminated film for forming a support piece, and a method for producing the same.
  • One aspect of the present disclosure relates to a method for manufacturing a semiconductor device having a dolmen structure.
  • This manufacturing method includes the following steps.
  • (D) Step of arranging the first chip on the substrate (E) Around the first chip on the substrate or Step of arranging a plurality of support pieces around the area where the first chip should be arranged
  • Step of preparing chips with agent pieces Step of constructing a dolmen structure by arranging chips with adhesive pieces on the surfaces of a plurality of support pieces
  • the film for forming support pieces has a resin layer having a tensile elasticity of 8.0 MPa or more. It has a multi-layer structure including at least. When the tensile elastic modulus of the resin layer of the support piece forming film is 8.0 MPa or more, excellent pick-up property of the support piece obtained by individualizing the support piece forming film can be achieved.
  • the support piece forming film may include, for example, a thermosetting resin layer made of a material different from that of the resin layer.
  • the tensile modulus means a value measured under the following conditions in accordance with the method described in JIS K7127: 1999 (Plastic-Test method for tensile properties-Part 3: Test conditions for film and sheet). To do. -Test piece dimensions: 10 mm x 40 mm ⁇ Chuck interval: 30 mm -Tensile rate: 300 mm / min Either step (D) or step (E) may be carried out first. When the step (D) is carried out first, in the step (E), a plurality of support pieces may be arranged on the substrate and around the first chip.
  • step (E) when the step (E) is carried out first, in the step (E), a plurality of support pieces are placed around the region on the substrate on which the first chip should be placed, and then (D). In the process, the first chip may be placed in the region.
  • a support piece obtained by individualizing a support piece forming film is used.
  • the process of manufacturing the support piece can be simplified as compared with the conventional manufacturing method in which a fragment of the semiconductor material obtained by dicing a semiconductor wafer is used as the support piece. That is, while the above-mentioned steps (1) to (7) have been conventionally required, since the support piece forming film does not include the semiconductor wafer, the back grind of the semiconductor wafer (1), (2) and The step (4) can be omitted. In addition, since a semiconductor wafer, which is more expensive than a resin material, is not used, the cost can be reduced.
  • the adhesive layer of the laminated film prepared in the step (A) may be a pressure-sensitive type or an ultraviolet curable type. That is, the adhesive layer may or may not be cured by ultraviolet irradiation, in other words, it may or may not contain a resin having a carbon-carbon double bond having photoreactivity. May be good.
  • the pressure-sensitive adhesive layer may contain a resin having a carbon-carbon double bond having photoreactivity.
  • the adhesive layer may be one in which the adhesiveness of the predetermined region is lowered by irradiating the predetermined region with ultraviolet rays, and for example, a resin having a carbon-carbon double bond having photoreactivity may be used. It may remain.
  • the adhesive layer is an ultraviolet curable type, the adhesiveness of the adhesive layer can be reduced by carrying out a step of irradiating the adhesive layer with ultraviolet rays between the steps (B) and (C).
  • the step of heating the support piece forming film or the support piece to cure the thermosetting resin layer or the adhesive piece may be carried out at an appropriate timing. For example, it may be carried out before the step (G).
  • the thermosetting resin layer is already cured to prevent the support pieces from being deformed with the arrangement of the chips with adhesive pieces. it can. Since the thermosetting resin layer has adhesiveness to other members (for example, a substrate), it is not necessary to separately provide an adhesive layer or the like on the support piece.
  • One aspect of this disclosure relates to a semiconductor device having a dolmen structure. That is, this semiconductor device is supported by a substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate and around the first chip, and a plurality of support pieces. Moreover, it has a dolmen structure including a second chip arranged so as to cover the first chip, and has a multilayer structure in which the support piece contains at least a resin piece having a tensile elastic modulus of 8.0 MPa or more.
  • the semiconductor device may further include an adhesive piece provided on one surface of the second chip and sandwiched between the second chip and a plurality of support pieces.
  • the first chip may be separated from the adhesive piece or may be in contact with the adhesive piece.
  • the adhesive piece is provided, for example, so as to cover at least the area of the second chip facing the first chip.
  • the adhesive piece extends continuously from the above-mentioned region of the second chip to the peripheral side of the second chip, and may be sandwiched between the second chip and a plurality of support pieces. That is, one piece of the adhesive may cover the area of the second chip and bond the second chip to the plurality of support pieces.
  • This laminated film includes a base film, an adhesive layer, and a support piece forming film in this order, and the support piece forming film has a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more.
  • This resin layer is, for example, a polyimide layer.
  • the support piece forming film may include a thermosetting resin layer made of a material different from that of the resin layer.
  • the functionality of the film can be improved as compared with the film made of a plurality of layers of the same material.
  • a support piece suitable for the dolmen structure can be obtained.
  • Such a support piece includes a resin piece (a resin layer is individualized) and an adhesive piece (a thermosetting resin layer is an individualized piece) provided on one surface of the resin piece.
  • the resin piece is made of a material different from that of the adhesive piece.
  • Such a support piece may include a three-layer structure of a resin piece and a pair of adhesive pieces sandwiching the resin piece, and the resin piece may be made of a material different from that of the pair of adhesive pieces.
  • the thickness of the support piece forming film is, for example, 5 to 180 ⁇ m. When the thickness of the support piece forming film is in this range, a dolmen structure having an appropriate height with respect to the first chip (for example, a controller chip) can be constructed.
  • the support piece forming film may include a thermosetting resin layer.
  • the thermosetting resin layer contains, for example, an epoxy resin and preferably contains an elastomer. Since the thermosetting resin layer constituting the support piece contains an elastomer, the stress in the semiconductor device can be relaxed.
  • One aspect of the present disclosure relates to a method for manufacturing a laminated film for forming a support piece.
  • This manufacturing method includes a step of preparing an adhesive film having a base film and an adhesive layer formed on one surface thereof, and a step of laminating a support piece forming film on the surface of the adhesive layer.
  • the support piece forming film has a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more.
  • a laminated film for forming a support piece having a thermosetting resin layer and a resin layer can be produced, for example, as follows. That is, the method for producing the laminated film for forming the support piece is a step of preparing a laminated film including a base film, an adhesive layer, and a thermosetting resin layer in this order, and a step of preparing a laminated film on the surface of the thermosetting resin layer. Including a step of laminating a resin layer having a tensile elastic modulus of 8.0 MPa or more.
  • a method for manufacturing a semiconductor device that can simplify the process of manufacturing a support piece in the manufacturing process of a semiconductor device having a dolmen structure and can achieve excellent pick-up property of the support piece. Further, the present disclosure provides a semiconductor device having a dolmen structure, a laminated film for forming a support piece, and a method for producing the same.
  • FIG. 1 is a cross-sectional view schematically showing a first embodiment of the semiconductor device according to the present disclosure.
  • 2 (a) and 2 (b) are plan views schematically showing an example of the positional relationship between the first chip and the plurality of support pieces.
  • FIG. 3A is a plan view schematically showing an embodiment of a laminated film for forming a support piece
  • FIG. 3B is a cross-sectional view taken along the line bb of FIG. 3A.
  • FIG. 4 is a cross-sectional view schematically showing a step of bonding the adhesive layer and the support piece forming film.
  • 5 (a) to 5 (d) are cross-sectional views schematically showing a manufacturing process of the support piece.
  • FIG. 1 is a cross-sectional view schematically showing a first embodiment of the semiconductor device according to the present disclosure.
  • 2 (a) and 2 (b) are plan views schematically showing an example of the positional relationship between the first chip and the plurality of support pieces.
  • FIG. 3A
  • FIG. 6 is a cross-sectional view schematically showing a state in which a plurality of support pieces are arranged on the substrate and around the first chip.
  • FIG. 7 is a cross-sectional view schematically showing an example of a chip with an adhesive piece.
  • FIG. 8 is a cross-sectional view schematically showing a dolmen structure formed on the substrate.
  • FIG. 9 is a cross-sectional view schematically showing a second embodiment of the semiconductor device according to the present disclosure.
  • FIG. 10 is a cross-sectional view schematically showing another embodiment of the laminated film for forming a support piece.
  • (meth) acrylic acid means acrylic acid or methacrylic acid
  • (meth) acrylate means acrylate or the corresponding methacrylate
  • a or B may include either A or B, or both.
  • the term “layer” includes not only a structure having a shape formed on the entire surface but also a structure having a shape partially formed when observed as a plan view.
  • the term “process” is used not only as an independent process but also as a term as long as the desired action of the process is achieved even when it cannot be clearly distinguished from other processes. included.
  • the numerical range indicated by using "-” indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
  • the content of each component in the composition is the total amount of the plurality of substances present in the composition unless otherwise specified, when a plurality of substances corresponding to each component are present in the composition.
  • the exemplary materials may be used alone or in combination of two or more unless otherwise specified.
  • the upper limit value or the lower limit value of the numerical range of one step may be replaced with the upper limit value or the lower limit value of the numerical range of another step.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • FIG. 1 is a cross-sectional view schematically showing a semiconductor device according to the present embodiment.
  • the semiconductor device 100 shown in this figure includes a substrate 10, a chip T1 (first chip) arranged on the surface of the substrate 10, and a plurality of chips T1 arranged on the surface of the substrate 10 and around the chip T1.
  • the support piece Dc, the chip T2 (second chip) arranged above the chip T1, the adhesive piece Tc sandwiched between the chip T2 and the plurality of support pieces Dc, and the chip T2 are laminated.
  • a stopper 50 is provided.
  • a dolmen structure is formed on the substrate 10 by a plurality of support pieces Dc, a chip T2, and an adhesive piece Tc located between the support piece Dc and the chip T2.
  • the chip T1 is separated from the adhesive piece Tc.
  • the adhesive piece Tc between the chip T1 and the chip T2 covers the region R of the chip T2 facing the chip T1 and continuously extends from the region R to the peripheral side of the chip T2. doing. That is, one adhesive piece Tc covers the region R of the chip T2, intervenes between the chip T2 and the plurality of support pieces, and adheres them.
  • FIG. 1 illustrates an embodiment in which the adhesive piece Tc is provided so as to cover the entire one surface (lower surface) of the chip T2.
  • the adhesive piece Tc may shrink in the manufacturing process of the semiconductor device 100, it suffices to substantially cover the entire one surface (lower surface) of the chip T2, for example, the peripheral edge of the chip T2.
  • the lower surface of the chip T2 in FIG. 1 corresponds to the back surface of the chip. In recent years, the back surface of chips is often uneven. Since substantially the entire back surface of the chip T2 is covered with the adhesive piece Tc, it is possible to prevent the chip T2 from cracking or cracking.
  • the substrate 10 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing the warp of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 to 300 ⁇ m, and may be 90 to 210 ⁇ m.
  • the chip T1 is, for example, a controller chip, which is adhered to the substrate 10 by the adhesive piece T1c and electrically connected to the substrate 10 by the wire w.
  • the shape of the chip T1 in a plan view is, for example, a rectangle (square or rectangle).
  • the length of one side of the chip T1 is, for example, 5 mm or less, and may be 2 to 5 mm or 1 to 5 mm.
  • the thickness of the chip T1 is, for example, 10 to 150 ⁇ m, and may be 20 to 100 ⁇ m.
  • the chip T2 is, for example, a memory chip, and is adhered onto the support piece Dc via the adhesive piece Tc. In plan view, the chip T2 has a larger size than the chip T1.
  • the shape of the chip T2 in a plan view is, for example, a rectangle (square or rectangle).
  • the length of one side of the chip T2 is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm.
  • the thickness of the chip T2 is, for example, 10 to 170 ⁇ m, and may be 20 to 120 ⁇ m.
  • the chips T3 and T4 are also memory chips, for example, and are adhered onto the chip T2 via an adhesive piece Tc.
  • the length of one side of the chips T3 and T4 may be the same as that of the chip T2, and the thickness of the chips T3 and T4 may be the same as that of the chip T2.
  • the support piece Dc acts as a spacer that forms a space around the chip T1.
  • the support piece Dc is composed of two adhesive pieces 5c and a resin piece 6p sandwiched between them.
  • the adhesive piece 5c is made of a cured product of a thermosetting resin composition (adhesive piece 5p).
  • the resin piece 6p is made of a resin (for example, polyimide) having a tensile elastic modulus of 8.0 MPa or more.
  • the resin piece 6p is made of a material different from that of the adhesive piece 5c. Since the support piece Dc has a plurality of layers made of different materials, the functions can be shared among the layers, and the function of the support piece can be improved as compared with the one made of a plurality of layers of the same material. it can.
  • two support pieces Dc may be arranged at positions separated from each other on both sides of the chip T1, or as shown in FIG. 2B.
  • One support piece Dc (shape: square, total of four) may be arranged at a position corresponding to the corner of the chip T1.
  • the length of one side of the support piece Dc in a plan view is, for example, 20 mm or less, and may be 1 to 20 mm or 1 to 12 mm.
  • the thickness (height) of the support piece Dc is, for example, 10 to 180 ⁇ m, and may be 20 to 120 ⁇ m.
  • the ratio of the total thickness of the two adhesive pieces 5c and 5c to the thickness of the support piece Dc is preferably 0.1 to 0.9, more preferably 0.2 to 0.8, and even more preferably. Is 0.2 to 0.7.
  • the adhesive piece 5c can play its role (for example, support of the chip T2 and prevention of misalignment of the resin piece 6p) to a higher degree.
  • the resin piece 6p has a sufficient thickness, so that the resin piece 6p acts like a spring plate and can achieve better pick-up performance (FIG. 5 (d)). )reference).
  • the thickness of the resin piece 6p is, for example, 10 to 80 ⁇ m, and may be 20 to 60 ⁇ m.
  • the thickness of the adhesive piece 5c (one layer) is, for example, 5 to 120 ⁇ m, and may be 10 to 60 ⁇ m.
  • the support piece Dc shown in FIG. 1 is after the adhesive piece (thermosetting tree composition) contained therein has been cured.
  • the support piece Da is in a state before the adhesive piece (thermosetting tree composition) contained therein is completely cured (see, for example, FIG. 5B).
  • the laminated film 20 for forming a support piece (hereinafter, sometimes referred to as "laminated film 20") shown in FIGS. 3 (a) and 3 (b) is prepared.
  • the laminated film 20 includes a base film 1, an adhesive layer 2, and a support piece forming film D.
  • the base film 1 is, for example, a polyethylene terephthalate film (PET film).
  • PET film polyethylene terephthalate film
  • the adhesive layer 2 is formed in a circular shape by punching or the like (see FIG. 3A).
  • the adhesive layer 2 is made of an ultraviolet curable adhesive. That is, the adhesive layer 2 has a property that the adhesiveness is lowered by being irradiated with ultraviolet rays.
  • the support piece forming film D is formed in a circular shape by punching or the like, and has a diameter smaller than that of the adhesive layer 2 (see FIG. 3A).
  • the support piece forming film D is composed of two thermosetting resin layers 5 and a resin layer 6 sandwiched between them.
  • the thickness of the thermosetting resin layer 5 is, for example, 5 to 180 ⁇ m, and may be 10 to 170 ⁇ m or 15 to 160 ⁇ m.
  • the thicknesses of the two thermosetting resin layers 5 may be the same or different.
  • the resin layer 6 is, for example, a polyimide layer.
  • the thermosetting resin layer 5 is made of a thermosetting resin composition.
  • the thermosetting resin composition can be in a semi-cured (B stage) state and then in a completely cured product (C stage) state by a subsequent curing treatment.
  • the thermosetting resin composition contains an epoxy resin, a curing agent, and an elastomer (for example, an acrylic resin), and further contains an inorganic filler, a curing accelerator, and the like, if necessary.
  • the compositions of the two thermosetting resin layers 5 may be the same or different. Details of the thermosetting resin composition constituting the thermosetting resin layer 5 will be described later.
  • the thickness of the resin layer 6 is, for example, 5 to 100 ⁇ m, and may be 10 to 90 ⁇ m or 20 to 80 ⁇ m.
  • the tensile elastic modulus of the resin layer 6 is 8.0 MPa or more, and may be 9.0 MPa or more or 10.0 MPa or more.
  • the resin piece 6p plays a role like a spring plate in the step of picking up the support piece Da (see FIG. 5D), and is an excellent pickup. You can achieve sex.
  • the upper limit of the tensile elastic modulus of the resin layer 6 is about 15 MPa from the viewpoint of easy availability of the material.
  • the material constituting the resin layer 6 examples include polyimide and polyethylene terephthalate (PET).
  • the resin layer 6 may be a layer made of a thermosetting resin composition or a photocurable resin composition that has been cured so that the tensile elastic modulus is within the above range.
  • the laminated film 20 is, for example, a second laminated film having a base film 1 and an adhesive layer 2 on the surface thereof, and a cover film 3 and a support piece forming film D on the surface thereof. It can be produced by laminating with a film (see FIG. 4).
  • the first laminated film is obtained through a step of forming an adhesive layer on the surface of the base film 1 by coating and a step of processing the adhesive layer into a predetermined shape (for example, a circle) by punching or the like.
  • the second laminated film includes a step of forming a thermosetting resin layer 5 on the surface of a cover film 3 (for example, a PET film or a polyethylene film) by coating, and a resin layer 6 on the surface of the thermosetting resin layer 5.
  • a step of forming a thermosetting resin layer 5 on the surface of the resin layer 6 by coating, and a step of forming a support piece forming film formed through these steps by punching or the like (for example, , Circular) is obtained through the process of processing.
  • the cover film 3 is peeled off at an appropriate timing.
  • the dicing ring DR is attached to the laminated film 20. That is, the dicing ring DR is attached to the adhesive layer 2 of the laminated film 20, and the support piece forming film D is arranged inside the dicing ring DR.
  • the support piece forming film D is individualized by dicing (see FIG. 5B). As a result, a large number of support pieces Da can be obtained from the support piece forming film D.
  • the support piece Da is composed of two adhesive pieces 5p and a resin piece 6p sandwiched between them. After that, the adhesive layer 2 is irradiated with ultraviolet rays to reduce the adhesive force between the adhesive layer 2 and the support piece Da.
  • the base film 1 is expanded to separate the support pieces Da from each other.
  • the support piece Da is peeled off from the adhesive layer 2 by pushing up the support piece Da with the push-up jig 42, and the support piece Da is picked up by suction with the suction collet 44.
  • the curing reaction of the thermosetting resin may be allowed to proceed by heating the support piece forming film D before dicing or the support piece Da before picking up. Excellent pickup performance can be achieved by appropriately curing the support piece Da when picking up. It is preferable that the notch for individualization is formed up to the outer edge of the support piece forming film D.
  • the diameter of the support piece forming film D may be, for example, 300 to 310 mm or 300 to 305 mm.
  • the shape of the support piece forming film D in a plan view is not limited to the circle shown in FIG. 3A, and may be a rectangle (square or rectangle).
  • the ratio of the total thickness of the two thermosetting resin layers 5 and 5 to the thickness of the support piece forming film D is preferably 0.1 to 0.9, and more preferably 0.2 to 0.8. It is more preferably 0.2 to 0.7.
  • the adhesive piece 5c can play its role (for example, support of the chip T2 and prevention of misalignment of the resin piece 6p) to a higher degree.
  • the resin piece 6p has a sufficient thickness, so that the resin piece 6p acts like a spring plate and can achieve better pick-up performance (FIG. 5 (d)). )reference).
  • the thickness of the resin layer 6 is, for example, 10 to 80 ⁇ m, and may be 20 to 60 ⁇ m.
  • the thickness of the thermosetting resin layer 5 (one layer) is, for example, 5 to 120 ⁇ m, and may be 10 to 60 ⁇ m.
  • the manufacturing method according to this embodiment includes the following steps (A) to (H).
  • E Step of arranging a plurality of support pieces Da on the substrate 10 around the first chip T1 (see FIG. 6).
  • (F) A step of preparing a chip T2a with an adhesive piece, which includes a second chip T2 and an adhesive piece Ta provided on one surface of the second chip T2 (see FIG. 7).
  • (G) A step of constructing a dolmen structure by arranging a chip T2a with an adhesive piece on the surface of a plurality of support pieces Dc (see FIG. 8).
  • (H) A step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 (see FIG. 1).
  • the steps (A) to (C) are processes for producing a plurality of support pieces Da, and have already been described.
  • the steps (D) to (H) are processes in which a dolmen structure is constructed on the substrate 10 by using a plurality of support pieces Da.
  • the steps (D) to (H) will be described with reference to FIGS. 6 to 8.
  • the step (D) is a step of arranging the first chip T1 on the substrate 10. For example, first, the chip T1 is arranged at a predetermined position on the substrate 10 via the adhesive layer T1c. After that, the chip T1 is electrically connected to the substrate 10 by the wire w.
  • the step (D) may be a step performed before the step (E), and before the step (A), between the steps (A) and (B), the steps (B) and (C). It may be between steps, or between steps (C) and (E).
  • the step (E) is a step of arranging a plurality of support pieces Da on the substrate 10 around the first chip T1.
  • the structure 30 shown in FIG. 6 is produced.
  • the structure 30 includes a substrate 10, a chip T1 arranged on the surface thereof, and a plurality of support pieces Da.
  • the support piece Da may be arranged by crimping.
  • the crimping treatment is preferably carried out, for example, under the conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds.
  • the adhesive piece 5p contained therein may be completely cured at the time of the step (E) to become the support piece Dc, and may not be completely cured at this time.
  • the adhesive piece 5p contained in the support piece Da may be completely cured to become the adhesive piece 5c before the start of the step (G).
  • the step (F) is a step of preparing the adhesive chip T2a shown in FIG. 7.
  • the adhesive piece T2a includes a chip T2 and an adhesive piece Ta provided on the surface of one of the chips T2.
  • the chip T2a with an adhesive piece can be obtained through a dicing step and a pick-up step using, for example, a semiconductor wafer and a dicing / die bonding integrated film.
  • the step (G) is a step of arranging the chip T2a with the adhesive piece above the chip T1 so that the adhesive piece Ta is in contact with the upper surface of the plurality of support pieces Dc.
  • the chip T2 is crimped to the upper surface of the support piece Dc via the adhesive piece Ta.
  • This crimping treatment is preferably carried out for 0.5 to 3.0 seconds under the conditions of, for example, 80 to 180 ° C. and 0.01 to 0.50 MPa.
  • the adhesive piece Ta is cured by heating. This curing treatment is preferably carried out for 5 minutes or more under the conditions of, for example, 60 to 175 ° C. and 0.01 to 1.0 MPa. As a result, the adhesive piece Ta is cured to become the adhesive piece Tc.
  • a dolmen structure is constructed on the substrate 10 (see FIG. 8).
  • the chip T3 is placed on the chip T2 via the adhesive piece, and further, the chip T4 is placed on the chip T3 via the adhesive piece.
  • the adhesive piece may be any thermosetting resin composition similar to the above-mentioned adhesive piece Ta, and becomes an adhesive piece Tc by heat curing (see FIG. 1).
  • the chips T2, T3 and T4 and the substrate 10 are electrically connected by wires w.
  • the number of chips stacked above the chip T1 is not limited to the three in this embodiment, and may be appropriately set.
  • Step (H) The step (H) is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50. Through this step, the semiconductor device 100 shown in FIG. 1 is completed.
  • thermosetting resin composition As described above, the thermosetting resin composition constituting the thermosetting resin layer 5 contains an epoxy resin, a curing agent, and an elastomer, and further contains an inorganic filler, a curing accelerator, and the like, if necessary. According to the studies by the present inventors, it is preferable that the support piece Da and the support piece Dc after curing have the following characteristics. -Characteristic 1: When the support piece Da is thermocompression bonded to a predetermined position on the substrate 10, misalignment is unlikely to occur (the melt viscosity of the adhesive piece 5p at 120 ° C.
  • -Characteristic 2 The adhesive piece 5c exhibits stress relaxation property in the semiconductor device 100 (the thermosetting resin composition contains an elastomer (rubber component)).
  • -Characteristic 3 The adhesive strength of the chip with the adhesive piece to the adhesive piece Tc is sufficiently high (the die share strength of the adhesive piece 5c with respect to the adhesive piece Tc is, for example, 2.0 to 7.0 Mpa or 3.0.
  • -Characteristic 4 The shrinkage rate due to curing is sufficiently small.
  • -Characteristic 5 The visibility of the support piece Da by the camera in the pickup process is good (the thermosetting resin composition contains, for example, a colorant).
  • -Characteristic 6 The adhesive piece 5c has sufficient mechanical strength.
  • Epoxy resin The epoxy resin is not particularly limited as long as it is cured and has an adhesive action.
  • Bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol S type epoxy resin, novolak type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin can be used.
  • novolak type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin
  • generally known ones such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic epoxy resin, and an alicyclic epoxy resin can be applied. These may be used alone or in combination of two or more.
  • Examples of the curing agent include phenolic resins, ester compounds, aromatic amines, aliphatic amines and acid anhydrides. Of these, phenolic resins are preferred from the perspective of achieving high die shear strength.
  • Commercially available phenolic resins include, for example, LF-4871 (trade name, BPA novolac type phenolic resin) manufactured by DIC Co., Ltd. and HE-100C-30 (trade name, phenylarakil type) manufactured by Air Water Inc. Phenolic resin), Phenolite KA and TD series manufactured by DIC Co., Ltd., Millex XLC-series and XL series manufactured by Mitsui Chemicals Co., Ltd.
  • Millex XLC-LL HE series manufactured by Air Water Inc.
  • HE100C-30 HE100C-30
  • MEHC-7800 series manufactured by Meiwa Kasei Co., Ltd. for example, MEHC-7800-4S
  • JDPP series manufactured by JEF Chemical Co., Ltd. can be mentioned. These may be used alone or in combination of two or more.
  • the blending amount of the epoxy resin and the phenol resin is preferably such that the equivalent ratio of the epoxy equivalent and the hydroxyl group equivalent is 0.6 to 1.5, and is 0.7 to 1.4, respectively, from the viewpoint of achieving high die shear strength. More preferably, it is more preferably 0.8 to 1.3. When the compounding ratio is within the above range, it is easy to achieve both curability and fluidity at a sufficiently high level.
  • Examples of the elastoma include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene and carboxy-modified acrylonitrile.
  • an acrylic resin is preferable as the elastoma, and further, an epoxy group-containing epoxy group obtained by polymerizing an epoxy group such as glycidyl acrylate or glycidyl methacrylate or a functional monomer having a glycidyl group as a crosslinkable functional group.
  • Acrylic resins such as (meth) acrylic copolymers are more preferable.
  • epoxy group-containing (meth) acrylic acid ester copolymers and epoxy group-containing acrylic rubbers are preferable, and epoxy group-containing acrylic rubbers are more preferable.
  • the epoxy group-containing acrylic rubber is a rubber having an epoxy group, which is mainly composed of an acrylic acid ester as a main component, a copolymer such as butyl acrylate and acrylonitrile, and a copolymer such as ethyl acrylate and acrylonitrile.
  • the acrylic resin may have not only an epoxy group but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.
  • acrylic resin products include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, SG-P3 solvent modified products (trade name, acrylic rubber, weight) manufactured by Nagase Chemtech Co., Ltd. Average molecular weight: 800,000, Tg: 12 ° C., solvent is cyclohexanone) and the like.
  • the glass transition temperature (Tg) of the acrylic resin is preferably ⁇ 50 to 50 ° C., more preferably ⁇ 30 to 30 ° C. from the viewpoint of achieving high die shear strength.
  • the weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3 million, more preferably 500,000 to 2 million, from the viewpoint of achieving high die share strength.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.
  • the amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass with respect to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent from the viewpoint of achieving high die shear strength. More preferably, it is 20 to 100 parts by mass.
  • Inorganic fillers include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride and crystalline. Examples include silica and amorphous silica. These may be used alone or in combination of two or more.
  • the average particle size of the inorganic filler is preferably 0.005 ⁇ m to 1.0 ⁇ m, more preferably 0.05 to 0.5 ⁇ m, from the viewpoint of achieving high die shear strength.
  • the surface of the inorganic filler is preferably chemically modified from the viewpoint of achieving high die shear strength.
  • Silane coupling agents are suitable as materials for chemically modifying the surface. Examples of the types of functional groups of the silane coupling agent include vinyl group, acryloyl group, epoxy group, mercapto group, amino group, diamino group, alkoxy group and ethoxy group.
  • the content of the inorganic filler is preferably 20 to 200 parts by mass and 30 to 100 parts by mass with respect to 100 parts by mass of the resin component of the thermosetting resin composition. Is more preferable.
  • curing accelerator examples include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high die shear strength, imidazole-based compounds are preferable. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used alone or in combination of two or more.
  • the content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass with respect to 100 parts by mass in total of the epoxy resin and the epoxy resin curing agent from the viewpoint of achieving high die shear strength, and is 0. .04 to 0.2 parts by mass is more preferable.
  • FIG. 9 is a cross-sectional view schematically showing the semiconductor device according to the second embodiment.
  • the chip T1 is separated from the adhesive piece Tc, whereas in the semiconductor device 200 according to the present embodiment, the chip T1 is in contact with the adhesive piece Tc. .. That is, the adhesive piece Tc is in contact with the upper surface of the chip T1 and the upper surface of the support piece Dc.
  • the position of the upper surface of the chip T1 and the position of the upper surface of the support piece Dc can be matched.
  • the chip T1 is connected to the substrate 10 by a flip chip instead of wire bonding. If the wire w is embedded in the adhesive piece Ta, the chip T1 can be in contact with the adhesive piece Tc even if the chip T1 is wire-bonded to the substrate 10.
  • the adhesive piece Ta constitutes the chip T2a with the adhesive piece together with the chip T2 (see FIG. 8).
  • the adhesive piece Tc between the chip T1 and the chip T2 covers the region R of the chip T2 facing the chip T1 and continuously extends from the region R to the peripheral side of the chip T2. doing.
  • This one adhesive piece Tc covers the region R of the chip T2 and is interposed between the chip T2 and the plurality of support pieces to bond them.
  • the lower surface of the chip T2 in FIG. 9 corresponds to the back surface. As described above, the back surface of recent chips is often formed with irregularities. Since substantially the entire back surface of the chip T2 is covered with the adhesive piece Tc, it is possible to prevent the chip T2 from cracking or cracking even if the upper surface of the chip T1 comes into contact with the adhesive piece Tc.
  • the present invention is not limited to the above embodiments.
  • the laminated film 20 having the ultraviolet curable adhesive layer 2 is illustrated, but the adhesive layer 2 may be a pressure sensitive type.
  • the support piece forming laminated film 20 including the support piece forming film D having a three-layer structure is exemplified, but the support piece forming laminated film has two layers. There may be four or more layers.
  • the support piece forming laminated film 20A shown in FIG. 10 has a two-layer film D2 (support piece forming film) having a thermosetting resin layer 5 and a resin layer 6. That is, in the support piece forming laminated film 20A, the thermosetting resin layer 5 is arranged between the adhesive layer 2 and the outermost resin layer 6.
  • the ratio of the thickness of the thermosetting resin layer 5 to the thickness of the bilayer film D2 is preferably 0.1 to 0.8, more preferably 0.2 to 0.7, and even more preferably 0. It is 2 to 0.6.
  • this ratio is 0.1 or more, the adhesive pieces 5p and 5c can play their roles (for example, supporting the chip T2 and preventing the resin piece 6p from being displaced) to a higher degree.
  • the ratio is 0.8 or less, since the resin piece 6p has a sufficient thickness, the resin piece 6p acts like a spring plate, and more excellent pick-up property can be achieved (FIG. 5 (d)). )reference).
  • the thickness of the resin layer 6 is, for example, 20 to 80 ⁇ m, and may be 20 to 60 ⁇ m.
  • the thickness of the thermosetting resin layer 5 is, for example, 5 to 120 ⁇ m, and may be 10 to 60 ⁇ m.
  • a metal layer for example, a copper layer or an aluminum layer
  • a tensile elastic modulus of 8.0 MPa or more may be adopted instead of the resin layer 6.
  • the thickness of the metal layer is, for example, 5 to 100 ⁇ m and may be 10 to 90 ⁇ m or 20 to 80 ⁇ m. Since the laminated films 20 and 20A for forming the support piece include the metal layer, excellent visibility of the support piece can be achieved in the pick-up process due to the optical contrast between the resin material and the metal material in addition to the excellent pick-up property. ..
  • the laminated film 20A for forming a support piece can be manufactured, for example, through the following steps. -A step of preparing a laminated film including a base film 1, an adhesive layer 2, and a thermosetting resin layer 5 in this order.-A step of bonding the resin layer 6 to the surface of the laminated film.
  • a varnish A for forming a thermosetting resin layer of a support piece forming film was prepared using the following materials.
  • -Epoxy resin 1 YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumitomo Metal Corporation, cresol novolac type epoxy resin, solid at 25 ° C) 5.4 parts by mass-Epoxy resin 2: YDF-8170C: (product Name, manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., liquid bisphenol F type epoxy resin, liquid at 25 ° C) 16.2 parts by mass ⁇
  • Inorganic filler SC2050-HLG: (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size 0.50 ⁇ m) 49.8 parts by mass
  • Varnish B for forming a thermosetting resin layer of a support piece forming film was prepared using the following materials.
  • Elastoma SG-P3 solvent modified product (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12
  • coupling agent 1 A-189: (trade name, manufactured by GE Toshiba Corporation, ⁇ -mercaptopropyltrimethoxysilane) 0.4 parts by mass
  • coupling agent 2 A-1160: (trade name) , GE Toshiba Co., Ltd., ⁇ -ureidopropyltriethoxysilane) 1.15 parts by mass
  • Curing accelerator Curesol 2PZ-CN: (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenyl) Imidazole) 0.03 parts by mass
  • Solvent Cyclohexane
  • Example 1 As described above, cyclohexanone was used as a solvent, and the solid content ratio of varnish A was adjusted to 40% by mass. Varnish A was filtered with a 100 mesh filter and vacuum defoamed. As a film to which the varnish A was applied, a polyethylene terephthalate (PET) film (thickness 38 ⁇ m) subjected to a mold release treatment was prepared. The varnish A after vacuum defoaming was applied onto the release-treated surface of the PET film. The applied varnish A was heated and dried in two steps at 90 ° C. for 5 minutes and then at 140 ° C. for 5 minutes.
  • PET polyethylene terephthalate
  • thermosetting resin layer in the B stage state (semi-cured state) was formed on the surface of the PET film.
  • a polyimide film (thickness: 25 ⁇ m, tensile elastic modulus: 46.4 MPa) on the surface of the thermosetting resin layer on a hot plate at 70 ° C.
  • the structure is similar to that of the two-layer film D2 shown in FIG.
  • a film for forming a support piece was formed on the surface of the PET film.
  • a laminated film (dicing tape) having an ultraviolet curable adhesive layer was prepared by the following procedure.
  • a copolymer was obtained by solution radical polymerization using 83 parts by mass of 2-ethylhexyl acrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 2 parts by mass of methacrylic acid as raw materials and ethyl acetate as a solvent. 12 parts by mass of 2-methacryloyloxyethyl isocyanate was reacted with this acrylic copolymer to synthesize an ultraviolet irradiation type acrylic copolymer having a carbon-carbon double bond. In the above reaction, 0.05 part of hydroquinone / monomethyl ether was used as a polymerization inhibitor.
  • the weight average molecular weight of the synthesized acrylic copolymer was measured by GPC and found to be 300,000 to 700,000.
  • the acrylic copolymer thus obtained and a polyisocyanate compound manufactured by Nippon Polyurethane Industry Co., Ltd., trade name: Coronate L
  • a polyisocyanate compound manufactured by Nippon Polyurethane Industry Co., Ltd., trade name: Coronate L
  • Coronate L a polyisocyanate compound
  • -Hydroxycyclohexylphenylketone 0.5 part was mixed to prepare an ultraviolet irradiation type pressure-sensitive adhesive solution.
  • This ultraviolet irradiation type pressure-sensitive adhesive solution was applied and dried on a polyethylene terephthalate release film (thickness: 38 ⁇ m) so that the thickness after drying was 10 ⁇ m. Then, a polyolefin film (thickness: 90 ⁇ m) having been subjected to corona discharge treatment on one side was attached to the pressure-sensitive adhesive layer. The obtained laminated film was aged in a constant temperature bath at 40 ° C. for 72 hours to prepare a dicing tape.
  • a support piece forming film (a two-layer film of a thermosetting resin layer and a polyimide film) is applied to the adhesive layer of the dicing tape so that the surface of the support piece forming film having the thermosetting resin layer faces the adhesive layer. Then, they were bonded using a rubber roll on a hot plate at 70 ° C. As a result, a laminate of the support piece forming film and the dicing tape was obtained.
  • the thickness of the thermosetting resin layer was 25 ⁇ m.
  • Example 2 A laminate of a support piece forming film and a dicing tape was obtained in the same manner as in Example 1 except that varnish B was used instead of varnish A.
  • thermosetting resin layer was set to 50 ⁇ m instead of 25 ⁇ m, and the polyimide film was not attached to the surface of the thermosetting resin layer. Then, the laminates according to Comparative Example 1 and Comparative Example 2 were obtained.
  • peeling Strength A test piece was prepared by cutting a laminate containing a support piece forming film according to an example and a comparative example into a length of 25 mm and a length of 100 mm, respectively. Then, ultraviolet rays were irradiated from the dicing tape side under the conditions of 80 mW / cm 2 and 200 mJ / cm 2 with a halogen lamp. The peel strength (peeling angle: 180 °, peeling speed: 300 mm / min) at the interface between the adhesive layer irradiated with ultraviolet rays and the film for forming a support piece was measured.
  • Example 1 ... 0.04 N / 25 mm
  • Example 2 0.05 N / 25 mm -Comparative example 1 ... 0.09 N / 25 mm -Comparative example 2: 0.05 N / 25 mm
  • Ultraviolet rays were irradiated from the dicing tape side toward the adhesive layer of the support piece with a halogen lamp under the conditions of 80 mW / cm 2 and 200 mJ / cm 2 . Then, the support piece was picked up in a state of being expanded (expanded amount: 3 mm) with a die bonder. A three-stage push-up stage was used as the push-up jig, and the conditions were a push-up speed of 10 mm / sec and a push-up height of 1200 ⁇ m. For each example and each comparative example, pickup was attempted for 6 support pieces. As a result, all of the six support pieces could be picked up for Examples 1 and 2. On the other hand, in Comparative Examples 1 and 2, out of the 6 support pieces, 2 or less of the support pieces could be picked up.
  • a method for manufacturing a semiconductor device that can simplify the process of manufacturing a support piece in the manufacturing process of a semiconductor device having a dolmen structure and can achieve excellent pick-up property of the support piece. Further, the present disclosure provides a semiconductor device having a dolmen structure, a laminated film for forming a support piece, and a method for producing the same.

Abstract

Le film stratifié pour former une pièce de support selon la présente invention comprend, dans l'ordre, un film de base, une couche adhésive et un film pour former une pièce de support, le film pour former une pièce de support ayant une structure multicouche comprenant au moins une couche de résine ayant une élasticité à la traction supérieure ou égale à 8,0 MPa. Ce film stratifié pour former une pièce de support est appliqué à un procédé de fabrication d'un dispositif à semi-conducteur ayant une structure en dolmen comprenant un substrat, une première puce disposée sur le substrat, une pluralité de pièces de support disposées sur le substrat autour de la première puce, et une seconde puce supportée par la pluralité de pièces de support et disposée de manière à recouvrir la première puce.
PCT/JP2020/017729 2019-04-25 2020-04-24 Dispositif à semi-conducteur ayant une structure en dolmen et son procédé de fabrication, et film stratifié pour former une pièce de support et son procédé de fabrication WO2020218524A1 (fr)

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KR1020217028917A KR20220002258A (ko) 2019-04-25 2020-04-24 돌멘 구조를 갖는 반도체 장치 및 그 제조 방법, 및, 지지편 형성용 적층 필름 및 그 제조 방법
CN202080020993.2A CN113574664A (zh) 2019-04-25 2020-04-24 具有支石墓结构的半导体装置及其制造方法以及支撑片形成用层叠膜及其制造方法
SG11202110094XA SG11202110094XA (en) 2019-04-25 2020-04-24 Semiconductor device having dolmen structure and method for manufacturing same, and laminated film for forming support piece and method for manufacturing same
JP2021516269A JPWO2020218524A1 (fr) 2019-04-25 2020-04-24

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PCT/JP2019/017733 WO2020217411A1 (fr) 2019-04-25 2019-04-25 Dispositif à semi-conducteur ayant une structure en dolmen et son procédé de fabrication, et film stratifié pour formation de pièce de support et son procédé de fabrication
JPPCT/JP2019/017733 2019-04-25

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PCT/JP2020/017729 WO2020218524A1 (fr) 2019-04-25 2020-04-24 Dispositif à semi-conducteur ayant une structure en dolmen et son procédé de fabrication, et film stratifié pour former une pièce de support et son procédé de fabrication

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WO2020217411A1 (fr) 2020-10-29
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CN113574664A (zh) 2021-10-29
KR20220002258A (ko) 2022-01-06

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