WO2020217138A3 - 半導体装置、及び半導体装置の動作方法 - Google Patents

半導体装置、及び半導体装置の動作方法 Download PDF

Info

Publication number
WO2020217138A3
WO2020217138A3 PCT/IB2020/053526 IB2020053526W WO2020217138A3 WO 2020217138 A3 WO2020217138 A3 WO 2020217138A3 IB 2020053526 W IB2020053526 W IB 2020053526W WO 2020217138 A3 WO2020217138 A3 WO 2020217138A3
Authority
WO
WIPO (PCT)
Prior art keywords
wiring
semiconductor device
potential
potentials
outputting
Prior art date
Application number
PCT/IB2020/053526
Other languages
English (en)
French (fr)
Other versions
WO2020217138A2 (ja
Inventor
松嵜隆徳
大貫達也
岡本佑樹
濱田俊樹
Original Assignee
株式会社半導体エネルギー研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社半導体エネルギー研究所 filed Critical 株式会社半導体エネルギー研究所
Priority to JP2021515316A priority Critical patent/JP7457006B2/ja
Priority to US17/602,431 priority patent/US11984147B2/en
Publication of WO2020217138A2 publication Critical patent/WO2020217138A2/ja
Publication of WO2020217138A3 publication Critical patent/WO2020217138A3/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Abstract

要約書 情報を多値の電位として記憶する半導体装置を提供する。 メモリセルと、第１、第２参照セルと、第１、第２センスアンプと、第１乃至第３回路と、を有す る半導体装置である。第１回路は、メモリセルから出力された第１信号に応じた、第１電位を第１ 配線及び第３配線に出力する機能を有し、第２回路は、第１参照セルから出力された第２信号に応 じた、第１参照電位を第２配線に出力する機能を有し、第３回路は、第２スイッチがオフ状態のと きに、第２参照セルから出力された第３信号に応じた、第２参照電位を前記第４配線に出力する機 能を有する。第１センスアンプは、第１電位と第１参照電位とを参照して、第１配線と第２配線の 電位を変動させ、第２センスアンプは、第１電位と第２参照電位とを参照して、第３配線と第４配 線の電位を変動させる。
PCT/IB2020/053526 2019-04-26 2020-04-15 半導体装置、及び半導体装置の動作方法 WO2020217138A2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021515316A JP7457006B2 (ja) 2019-04-26 2020-04-15 半導体装置、及び半導体装置の動作方法
US17/602,431 US11984147B2 (en) 2019-04-26 2020-04-15 Semiconductor device including sense amplifier and operation method of semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-085084 2019-04-26
JP2019085084 2019-04-26

Publications (2)

Publication Number Publication Date
WO2020217138A2 WO2020217138A2 (ja) 2020-10-29
WO2020217138A3 true WO2020217138A3 (ja) 2021-02-18

Family

ID=72941602

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2020/053526 WO2020217138A2 (ja) 2019-04-26 2020-04-15 半導体装置、及び半導体装置の動作方法

Country Status (2)

Country Link
JP (1) JP7457006B2 (ja)
WO (1) WO2020217138A2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023148571A1 (ja) * 2022-02-04 2023-08-10 株式会社半導体エネルギー研究所 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149900A (ja) * 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
JPH01192083A (ja) * 1988-01-27 1989-08-02 Matsushita Electric Ind Co Ltd 半導体メモリ
JP2016054282A (ja) * 2014-04-10 2016-04-14 株式会社半導体エネルギー研究所 記憶装置、及び半導体装置
JP2016219089A (ja) * 2015-05-14 2016-12-22 株式会社半導体エネルギー研究所 半導体装置、記憶装置、電子機器及び半導体装置の駆動方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230021180A (ko) 2017-06-27 2023-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149900A (ja) * 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
JPH01192083A (ja) * 1988-01-27 1989-08-02 Matsushita Electric Ind Co Ltd 半導体メモリ
JP2016054282A (ja) * 2014-04-10 2016-04-14 株式会社半導体エネルギー研究所 記憶装置、及び半導体装置
JP2016219089A (ja) * 2015-05-14 2016-12-22 株式会社半導体エネルギー研究所 半導体装置、記憶装置、電子機器及び半導体装置の駆動方法

Also Published As

Publication number Publication date
US20220172766A1 (en) 2022-06-02
JP7457006B2 (ja) 2024-03-27
JPWO2020217138A1 (ja) 2020-10-29
WO2020217138A2 (ja) 2020-10-29

Similar Documents

Publication Publication Date Title
KR950027821A (ko) 기준전위발생장치 및 그것을 구비한 반도체메모리장치
KR101369093B1 (ko) 캐패시터로 절연된 미스매치 보상 센스 증폭기
AU2002359642A1 (en) Input buffer and method for voltage level detection
KR960030403A (ko) 반도체 장치, 이 장치를 갖는 반도체 회로, 상관 연산 장치, 신호 변환기, 및 신호 처리 시스템
WO2017155814A3 (en) Memory cell sensing with storage component isolation
KR920008753A (ko) 반도체 기억장치
WO2009029737A3 (en) Dynamic random access memory having junction field effect transistor cell access device
WO2007130640A3 (en) Memory device including multiplexed inputs
KR850003044A (ko) 반도체 기억장치 및 그것을 사용한 시스템
TW200606955A (en) Semiconductor storage device
TW200615973A (en) Semiconductor memory devices and method of sensing bit line thereof
WO2020217138A3 (ja) 半導体装置、及び半導体装置の動作方法
WO2009012270A3 (en) Systems, methods and devices for a cmos imager having a pixel output clamp
US10510386B1 (en) Dynamic bit-line clamping circuit for computing-in-memory applications and clamping method thereof
TW200636742A (en) Sense amplifier overdriving circuit and semiconductor device using the same
KR930010994A (ko) 반도체 기억장치
KR850002636A (ko) 전하전송형 전압증폭부를 가진 반도체 메모리
US6295240B1 (en) Controlling a sense amplifier
JP2015041388A5 (ja)
US6519175B2 (en) Ferroelectric memory device
EP4141932A3 (en) Standard cell structure
US8457326B2 (en) Output circuit for audio codec chip
US7539073B2 (en) Memory device with auxiliary precharge unit to improve precharge operation for bit line circuitry
KR840005884A (ko) 반도체 메모리
TW200713305A (en) Bit line control circuit for semiconductor memory device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20794506

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2021515316

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20794506

Country of ref document: EP

Kind code of ref document: A2