WO2020215388A1 - 深红光热活化延迟荧光材料及其制备方法和电致发光器件 - Google Patents

深红光热活化延迟荧光材料及其制备方法和电致发光器件 Download PDF

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WO2020215388A1
WO2020215388A1 PCT/CN2019/086363 CN2019086363W WO2020215388A1 WO 2020215388 A1 WO2020215388 A1 WO 2020215388A1 CN 2019086363 W CN2019086363 W CN 2019086363W WO 2020215388 A1 WO2020215388 A1 WO 2020215388A1
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deep red
activated delayed
compound
fluorescent material
delayed fluorescent
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王彦杰
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武汉华星光电半导体显示技术有限公司
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    • H10K50/00—Organic light-emitting devices
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    • C09K2211/1014—Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B

Definitions

  • the present invention relates to the field of display technology, in particular to a deep red photothermally activated delayed fluorescence (TADF) material, a preparation method thereof, and an electroluminescent device.
  • TADF deep red photothermally activated delayed fluorescence
  • OLED display devices do not require a backlight source for active light emission, have high luminous efficiency, large viewing angles, fast response speed, large temperature adaptation range, relatively simple production and processing technology, and drive The advantages of low voltage, low energy consumption, lighter and thinner, flexible display and huge application prospects have attracted the attention of many researchers.
  • the existing OLED display device usually includes a substrate, an anode provided on the substrate, an organic light emitting layer provided on the anode, an electron transport layer provided on the organic light emitting layer, and a cathode provided on the electron transport layer. When working, it emits holes from the anode and electrons from the cathode to the organic light-emitting layer, combines these electrons and holes to generate exciting electron-hole pairs, and converts the exciting electron-hole pairs from the excited state to the ground state Realize light.
  • the light-emitting guest material that plays a leading role is very important.
  • the light-emitting guest materials used in early OLEDs were fluorescent materials. Since the ratio of singlet and triplet excitons in OLEDs is 1:3, the theoretical internal quantum efficiency (IQE) of OLEDs based on fluorescent materials is only It can reach 25%, which greatly limits the application of fluorescent electroluminescent devices. Due to the spin-orbit coupling of heavy atoms, heavy metal complex phosphorescent materials can simultaneously use singlet and triplet excitons to achieve 100% IQE. However, the commonly used heavy metals are precious metals such as Ir and Pt, which are costly, and the phosphorescent materials of heavy metal complexes still need a breakthrough in blue light materials.
  • TADF organic thermally activated delayed fluorescence
  • TADF fast reverse intersystem-crossing constant
  • PLQY high photoluminescence quantum yield
  • TADF deep red photothermal activated delayed fluorescence
  • the present invention provides a deep red photothermal activated delayed fluorescence (TADF) material, which includes a compound composed of an acceptor A and a donor D, and the compound has the general structural formula shown in formula 1. :
  • TADF deep red photothermal activated delayed fluorescence
  • the receptor A is selected from any one of the following structural formulas:
  • the donor D is selected from any of the following structural formulas:
  • the present invention also provides a method for preparing a deep red photothermal activated delayed fluorescence (TADF) material, which includes the following steps:
  • Step S10 adding compound A-X and compound D-B(OH)2 to the alkali-containing solution, wherein said X is a halogen, and said A is any one of the following structural formulae:
  • the D is any one of the following structural formulas:
  • Step S20 adding a palladium catalyst to the solution under inert gas, and reacting for a first time at a first temperature to obtain a reaction liquid;
  • Step S30 cooling the reaction liquid to a second temperature to obtain a mixture
  • Step S40 Separate the deep red photothermal activated delayed fluorescence (TADF) material from the mixture, including a compound composed of acceptor A and donor D, and the compound has the general structural formula shown in formula 1. :
  • TADF deep red photothermal activated delayed fluorescence
  • the first temperature is 55°C to 65°C
  • the first time period is 12 hours to 36 hours. hour.
  • the second temperature is room temperature.
  • the solution is toluene
  • the alkali is potassium carbonate
  • the The palladium catalyst is palladium tetrakistriphenylphosphorus.
  • the step S30 further includes subjecting the reaction solution to extraction, water washing, dehydration, filtration, and centrifugation Dry treatment to obtain the mixture.
  • TADF deep red photothermal activated delayed fluorescence
  • the step S40 is to use column chromatography for separation, and the column chromatography adopts
  • the eluent is petroleum ether: dichloromethane with a volume ratio of 1:1.
  • the compound AX is 2-bromotetracenedione 2-bromopentacene- 5,7,12,14-tetraketone
  • the compound DB(OH)2 is 4-(diphenylamino)-phenylboronic acid.
  • the present invention also provides an electroluminescent device, comprising: a base layer; a hole injection layer located on the base layer; a hole transport layer located on the hole injection layer; a light emitting layer located on the hole On the transport layer; the electron transport layer is located on the light-emitting layer; and the cathode layer is located on the electron transport layer, wherein the light-emitting layer includes the deep red photothermal activated delayed fluorescence (TADF) material provided by the present invention.
  • TADF deep red photothermal activated delayed fluorescence
  • the material of the base layer includes ITO; the material of the hole injection layer includes 2,3,6,7,10,11-hexacyano -1,4,5,8,9,12-hexaazatriphenylene (HATCN); the material of the hole transport layer includes 4,4'-cyclohexylbis[N,N-bis(4-methyl Phenyl)aniline] (TAPC); the material of the electron transport layer includes 1,3,5-tris(3-(3-pyridyl)phenyl)benzene (Tm3PyPB); and the material of the cathode layer includes Lithium fluoride and aluminum.
  • HTCN 2,3,6,7,10,11-hexacyano -1,4,5,8,9,12-hexaazatriphenylene
  • HTCN 4,4'-cyclohexylbis[N,N-bis(4-methyl Phenyl)aniline]
  • the material of the electron transport layer includes 1,3,5-tris(3-(3-pyridy
  • the purpose of the present invention is to provide a deep red photothermally activated delayed fluorescence (TADF) material, and a series of deep red photothermal activated delayed fluorescence molecules containing quinone receptors are synthesized through clever molecular design. And this kind of molecular acceptor contains a carbonyl structure, which makes the molecule have a high inter-system crossing rate constant and anti-system crossing rate constant, which can effectively inhibit the reduction of the radiation transition rate caused by the energy gap rule, thereby obtaining high light. Photoluminescence quantum yield (PLQY).
  • TADF deep red photothermally activated delayed fluorescence
  • the degree of overlap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) for the receptor can be increased.
  • the efficiency roll-off of the device is effectively suppressed, thereby improving the device efficiency of TADF molecules, and the light-emitting materials provided by the present invention are used to prepare a series of high-performance deep red light-emitting organic light-emitting diodes (organic light-emitting diodes, OLED).
  • FIG. 1 is a flowchart of a method for preparing a deep red photothermal activated delayed fluorescence (TADF) material according to an embodiment of the present invention.
  • TADF deep red photothermal activated delayed fluorescence
  • Figure 2 is the fluorescence emission spectra of compound 1 and compound 2 in the first embodiment and the second embodiment of the present invention.
  • Fig. 3 is a schematic structural diagram of an electroluminescent device according to an embodiment of the present invention.
  • the embodiment of the present invention provides a deep red photothermal activated delayed fluorescence (TADF) material.
  • TADF deep red photothermal activated delayed fluorescence
  • TADF deep red photothermal activated delayed fluorescence
  • a series of deep red photothermal activated delayed fluorescence molecules containing quinone receptors are synthesized.
  • this kind of molecular acceptor contains a carbonyl structure, which makes the molecule have a high inter-system crossing rate constant and anti-system crossing rate constant, which can effectively inhibit the reduction of the radiation transition rate caused by the energy gap rule, thereby obtaining high light.
  • Photoluminescence quantum yield (PLQY) Photoluminescence quantum yield
  • the overlap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) for the receptor can be increased.
  • the efficiency roll-off of the device is effectively suppressed, thereby improving the device efficiency of the TADF molecule.
  • the light-emitting materials provided by the embodiments of the present invention are used to prepare a series of high-performance deep red light TADF organic light-emitting diodes (OLED).
  • the embodiment of the present invention provides a deep red photothermal activated delayed fluorescence (TADF) material, which includes a compound composed of an acceptor A and a donor D, and the compound has a structure shown in formula 1.
  • TADF deep red photothermal activated delayed fluorescence
  • the receptor A is selected from any one of the following structural formulas:
  • the donor D is selected from any of the following structural formulas:
  • FIG. 1 is a flowchart of a preparation method of a deep red photothermal activated delayed fluorescence (TADF) material according to an embodiment of the present invention.
  • TADF deep red photothermal activated delayed fluorescence
  • an embodiment of the present invention also provides a method for preparing a deep red photothermal activated delayed fluorescence (TADF) material, which includes the following steps:
  • Step S10 adding compound A-X and compound D-B(OH)2 to the alkali-containing solution, wherein said X is a halogen, and said A is any one of the following structural formulae:
  • the D is any one of the following structural formulas:
  • Step S20 adding a palladium catalyst to the solution under inert gas, and reacting for a first time at a first temperature to obtain a reaction liquid;
  • Step S30 cooling the reaction liquid to a second temperature to obtain a mixture
  • Step S40 Separate the deep red photothermal activated delayed fluorescence (TADF) material from the mixture, including a compound composed of acceptor A and donor D, and the compound has the general structural formula shown in formula 1. :
  • TADF deep red photothermal activated delayed fluorescence
  • the first temperature is 55°C to 65°C
  • the first time period is 12 hours to 36 hours. hour.
  • the second temperature is room temperature.
  • the solution is toluene
  • the alkali is potassium carbonate
  • the The palladium catalyst is palladium tetrakistriphenylphosphorus.
  • the step S30 further includes subjecting the reaction solution to extraction, water washing, dehydration, filtration, and centrifugation Dry treatment to obtain the mixture.
  • TADF deep red photothermal activated delayed fluorescence
  • the step S40 is to use column chromatography for separation, and the column chromatography adopts
  • the eluent is petroleum ether: dichloromethane with a volume ratio of 1:1.
  • the compound AX is 2-bromotetracene dione or 2-bromopentacene -5,7,12,14-tetraketone
  • the compound DB(OH)2 is 4-(diphenylamino)-phenylboronic acid.
  • the target deep red photothermal activated delayed fluorescence (TADF) material to be synthesized includes compound 1 of the following structural formula 2:
  • reaction formula 1 The synthetic route of compound 1 of structural formula 2 is shown in reaction formula 1:
  • the target deep red photothermal activated delayed fluorescence (TADF) material to be synthesized includes compound 2 of the following structural formula 3:
  • compound 1 and compound 2 have the structures shown in formula 2 and formula 3, respectively.
  • the compound 1 and compound 2 are tested.
  • the fluorescence emission spectra of compound 1 and compound 2 under the pure film are shown in Fig. 2
  • the lowest singlet state (S10) and lowest triplet energy level (T1) and photoluminescence quantum yield (PLQY) calculated based on the B3LYP theory of the compound 1 and compound 2 are shown in Table 1 below:
  • PL peak is the photoluminescence peak
  • S10 is the lowest singlet energy level
  • T 1 is the lowest triplet energy level
  • ⁇ E ST is the energy level difference between the lowest singlet energy level and the lowest triplet energy level.
  • an embodiment of the present invention also provides an electroluminescent device, which includes the aforementioned deep red photothermal activated delayed fluorescence (TADF) material.
  • TADF deep red photothermal activated delayed fluorescence
  • the electroluminescent device 100 includes a base layer 1; a hole injection layer 2 located on the base layer 1; a hole transport layer 3 located on the hole injection layer 2 Luminescent layer 4, located on the hole transport layer 3; electron transport layer 5, located on the light emitting layer 4; and cathode layer 6, located on the electron transport layer 5, wherein the light emitting layer 4 includes the The deep red photothermal activated delayed fluorescence (TADF) material provided by the invention.
  • TADF deep red photothermal activated delayed fluorescence
  • the material of the base layer 1 includes ITO; the material of the hole injection layer 2 includes 2, 3, 6, 7, 10, 11-6. Cyano-1,4,5,8,9,12-hexaazatriphenylene (HATCN); the material of the hole transport layer 3 includes 4,4'-cyclohexylbis[N,N-bis( 4-methylphenyl)aniline] (TAPC); the material of the electron transport layer 5 includes 1,3,5-tris(3-(3-pyridyl)phenyl)benzene (Tm3PyPB); and the cathode
  • the material of layer 6 includes lithium fluoride and aluminum.
  • compound 1 and compound 2 are used as the light-emitting layer 4 to fabricate the device 100 and the device 200, and the performance of the device 100 and the device 200 are measured.
  • the thickness of the base layer 1 and the hole injection layer 2 in the device 100 and the device 200 is 30 nm.
  • the thickness of the hole transport layer 3 is 40 nm.
  • the light emitting layer 4 of the device 100 includes 5% compound 1 with a thickness of 40 nm; the light emitting layer 4 of the device 200 includes 5% compound 2 with a thickness of 40 nm.
  • the thickness of the electron transport layer 5 is 40 nm.
  • the thickness of lithium fluoride in the cathode 500 is 1 nm, and the thickness of aluminum is 100 nm.
  • the embodiment of the present invention provides a deep red photothermal activated delayed fluorescence (TADF) material.
  • TADF deep red photothermal activated delayed fluorescence
  • TADF deep red photothermal activated delayed fluorescence
  • the degree of overlap of the HOMO and LUMO to the acceptor can be increased, which can effectively inhibit the efficiency roll-off of the device, thereby improving the device efficiency of the TADF molecule.
  • the luminescent materials provided by the present invention are used To prepare a series of high-performance deep red light TADF organic light-emitting diodes (OLED).

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Abstract

提供了一种深红光热活化延迟荧光材料及其制备方法和电致发光器件，所述深红光热活化延迟荧光(TADF)材料，包括由受体A及给体D所组成的化合物，所述化合物具有如式1所示的结构通式： D-A式1 其中所述受体A是择自A组结构式中任一者，以及所述给体D是择自D组结构式中任一者。

Description

深红光热活化延迟荧光材料及其制备方法和电致发光器件 技术领域
本发明涉及显示技术领域，尤其涉及一种深红光热活化延迟荧光(thermally activated delayed fluorescence，TADF)材料及其制备方法和电致发光器件。
背景技术
有机电致发光二极管(organic light-emitting diodes，OLED)显示装置以其主动发光不需要背光源、发光效率高、可视角度大、响应速度快、温度适应范围大、生产加工工艺相对简单、驱动电压低，能耗小，更轻更薄，柔性显示等优点以及巨大的应用前景，吸引了众多研究者的关注。
现有的OLED显示装置通常包括：基板、设于基板上的阳极、设于阳极上的有机发光层，设于有机发光层上的电子传输层、及设于电子传输层上的阴极。工作时向有机发光层发射来自阳极的空穴和来自阴极的电子，将这些电子和空穴组合产生激发性电子-空穴对，并将激发性电子-空穴对从受激态转换为基态实现发光。
在OLED中，起主导作用的发光客体材料至关重要。早期的OLED使用的发光客体材料为荧光材料，由于在OLED中单重态和三重态的激子比例为1:3，因此基于荧光材料的OLED的理论内量子效率(internal quantum  efficiency,IQE)只能达到25％，极大的限制了荧光电致发光器件的应用。重金属配合物磷光材料由于重原子的自旋轨道耦合作用，使得它能够同时利用单重态和三重态激子而实现100％的IQE。然而，通常使用的重金属都是Ir、Pt等贵重金属，成本很高，并且重金属配合物磷光发光材料在蓝光材料方面尚有待突破。
纯有机热活化延迟荧光(thermally activated delayed fluorescence，TADF)材料，通过巧妙的分子设计，使得分子具有较小的最低单三重能级差(ΔEST)，这样三重态激子可以通过反向系间窜越(RISC)回到单重态，再通过辐射跃迁至基态而发光，从而能够同时利用单、三重态激子，也可以实现100％的IQE。
对于TADF材料，快速的反向系间窜越常数(reverse intersystem-crossing,kRISC)以及高的光致发光量子产率(photoluminescence quantum yield,PLQY)是制备高效率OLED的必要条件。目前，绿光和天蓝光TADF材料已经获得超过30％的外量子效率(EQE)；但是红光及深红光TADF材料由于能隙规则(Energy gap law)，无法获得优异的器件性能。
技术问题
据此，亟需开发一种深红光热活化延迟荧光(TADF)材料，其中的分子具有高的系间窜越速率常数和反系间窜 越速率常数，并且提高给受体的最高占据分子轨域(highest occupied molecular orbital,HOMO)和最低未占分子轨域(lowest unoccupied molecular orbital,LUMO)的重叠程度，从而提高TADF分子的器件效率。
技术解决方案
为实现上述目的，本发明提供了一种深红光热活化延迟荧光(TADF)材料，包括由受体A及给体D所组成的化合物，所述化合物具有如式1所示的结构通式：
D-A式1
其中所述受体A是择自下列结构式中任一者：
Figure PCTCN2019086363-appb-000001
以及
所述给体D是择自下列结构式中任一者：
Figure PCTCN2019086363-appb-000002
本发明还提供了一种深红光热活化延迟荧光(TADF)材料的制备方法，包括如下步骤：
步骤S10、在含碱的溶液中加入化合物A-X及化合物D-B(OH)2，其中所述X为卤素，所述A为具有下列结构式中任一者：
Figure PCTCN2019086363-appb-000003
所述D为具有下列结构式中任一者：
Figure PCTCN2019086363-appb-000004
步骤S20、在惰性气体下，向所述溶液加入钯催化剂，在第一温度下反应第一时长以得到一反应液；
步骤S30、将所述反应液冷却至第二温度，得到一混合物；以及
步骤S40、自所述混合物分离出所述深红光热活化延迟荧光(TADF)材料，包括由受体A及给体D所组成的化合物，所述化合物具有如式1所示的结构通式：
D-A式1。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述第一温度为55℃至65℃，所述第一时长为12小时至36小时。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述第二温度为室温。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述步骤S10中，所述溶液为甲苯、所述碱为碳酸钾、以及所述钯催化剂为四三苯基磷钯。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述步骤S30更包括将所述反应液经过萃取、水洗、脱水、过滤、以及离心干燥处理以得到所述混合物。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述步骤S40系使用管柱层析进行分离，所述管柱层析所采用的淋洗液为体积比1:1的石油醚：二氯甲烷。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述化合物A-X为2-溴代并四苯二酮2-溴代并五苯-5,7,12,14-四酮，所述化合物D-B(OH)2为4-(二苯基氨基)-苯硼酸。
本发明又提供一种电致发光器件，包括：基底层；空 穴注入层，位于所述基底层上；空穴传输层，位于所述空穴注入层上；发光层，位于所述空穴传输层上；电子传输层，位于所述发光层上；以及阴极层，位于所述电子传输层上，其中所述发光层包括本发明所提供的深红光热活化延迟荧光(TADF)材料。
依据本发明的一实施例，在所述电致发光器件中，所述基底层的材料包括ITO；所述空穴注入层的材料包括2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲(HATCN)；所述空穴传输层的材料包括4,4'-环己基二[N,N-二(4-甲基苯基)苯胺](TAPC)；所述电子传输层的材料包括1,3,5-三(3-(3-吡啶基)苯基)苯(Tm3PyPB)；以及所述阴极层的材料包括氟化锂及铝。
有益效果
本发明的目的在于提供一种深红光热活化延迟荧光(thermally activated delayed fluorescence，TADF)材料，通过巧妙的分子设计，合成了一系列含醌类受体的深红光热活化延迟荧光分子。而这类分子受体含有羰基结构，使得分子具有高的系间窜越速率常数和反系间窜越速率常数，能够有效抑制由于能隙规则导致的辐射跃迁速率的降低，从而获得高的光致发光量子产率(photoluminescence quantum yield,PLQY)。同时通过调节羰基在线性芳香结构中的位置，提高给受体的最高占据分子轨域(highest  occupied molecular orbital,HOMO)和最低未占分子轨域(lowest unoccupied molecular orbital,LUMO)的重叠程度，能够有效抑制器件的效率滚降，从而提高TADF分子的器件效率，利用本发明所提供的这些发光材料来制备一系列高性能的深红光TADF有机发光二极管(organic light-emitting diodes，OLED)。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例的深红光热活化延迟荧光(TADF)材料的制备方法的流程图。
图2为本发明的第一实施例及第二实施例中化合物1及化合物2的荧光发射光谱图。
图3为本发明实施例的电致发光器件的结构示意图。
本发明的最佳实施方式
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式作详细说明。
本发明实施例提供了一种深红光热活化延迟荧光(thermally activated delayed fluorescence，TADF)材料，通 过巧妙的分子设计，合成了一系列含醌类受体的深红光热活化延迟荧光分子。而这类分子受体含有羰基结构，使得分子具有高的系间窜越速率常数和反系间窜越速率常数，能够有效抑制由于能隙规则导致的辐射跃迁速率的降低，从而获得高的光致发光量子产率(photoluminescence quantum yield,PLQY)。同时通过调节羰基在线性芳香结构中的位置，提高给受体的最高占据分子轨域(highest occupied molecular orbital,HOMO)和最低未占分子轨域(lowest unoccupied molecular orbital,LUMO)的重叠程度，能够有效抑制器件的效率滚降，从而提高TADF分子的器件效率，利用本发明实施例所提供的这些发光材料来制备一系列高性能的深红光TADF有机发光二极管(OLED)。
为实现上述目的，本发明实施例提供了一种深红光热活化延迟荧光(TADF)材料，包括由受体A及给体D所组成的化合物，所述化合物具有如式1所示的结构通式：
D-A式1
其中所述受体A是择自下列结构式中任一者：
Figure PCTCN2019086363-appb-000005
以及
所述给体D是择自下列结构式中任一者：
Figure PCTCN2019086363-appb-000006
参见图1，图1为本发明实施例的深红光热活化延迟荧光(TADF)材料的制备方法的流程图。如图1所示，本发明实施例还提供了一种深红光热活化延迟荧光(TADF)材料的制备方法，包括如下步骤：
步骤S10、在含碱的溶液中加入化合物A-X及化合物D-B(OH)2，其中所述X为卤素，所述A为具有下列结构式中任一者：
Figure PCTCN2019086363-appb-000007
所述D为具有下列结构式中任一者：
Figure PCTCN2019086363-appb-000008
步骤S20、在惰性气体下，向所述溶液加入钯催化剂，在第一温度下反应第一时长以得到一反应液；
步骤S30、将所述反应液冷却至第二温度，得到一混合物；以及
步骤S40、自所述混合物分离出所述深红光热活化延迟荧光(TADF)材料，包括由受体A及给体D所组成的化合物，所述化合物具有如式1所示的结构通式：
D-A式1。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述第一温度为55℃至65℃，所述第一时长为12小时至36小时。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述第二温度为室温。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述步骤S10中，所述溶液为甲苯、所述碱为碳酸钾、以及所述钯催化剂为四三苯 基磷钯。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述步骤S30更包括将所述反应液经过萃取、水洗、脱水、过滤、以及离心干燥处理以得到所述混合物。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述步骤S40系使用管柱层析进行分离，所述管柱层析所采用的淋洗液为体积比1:1的石油醚：二氯甲烷。
依据本发明的一实施例，在所述的深红光热活化延迟荧光(TADF)材料的制备方法中，所述化合物A-X为2-溴代并四苯二酮或2-溴代并五苯-5,7,12,14-四酮，所述化合物D-B(OH)2为4-(二苯基氨基)-苯硼酸。
实施例1
在本发明的具体实施例1中，欲合成的目标深红光热活化延迟荧光(TADF)材料包括下列结构式2的化合物1：
Figure PCTCN2019086363-appb-000009
结构式2的化合物1的合成路线如下反应式1所示：
Figure PCTCN2019086363-appb-000010
化合物1的详细合成步骤如下：
将2-溴代并四苯-5,12-二酮(3.36g，10mmol)、4-(二苯基氨基)-苯硼酸(3.18g，11mmol)、30mL甲苯和10mL的2.5M碳酸钾水溶液加入到100mL的舒伦克(Schlenk)瓶中，用氩气进行抽换气。然后加入四三苯基磷钯(0.48g，0.4mmol)，80℃回流反应24h。冷却至室温后，将反应液用DCM进行萃取三次，水洗三次，无水硫酸钠干燥，过滤，旋干。用200-300目的硅胶进行柱层析，淋洗液为石油醚：DCM(1：1，V/V)，得到红色固体4.06g，产率81％。HRMS[M+H] +calcd.for C 36H 23NO 2:501.1729；found:501.1743.
实施例2
在本发明的具体实施例2中，欲合成的目标深红光热活化延迟荧光(TADF)材料包括下列结构式3的化合物2：
Figure PCTCN2019086363-appb-000011
结构式3的化合物2的合成路线如下反应式2所示：
Figure PCTCN2019086363-appb-000012
化合物2的详细合成步骤如下：
将2-溴代并五苯-5,7,12,14-四酮(4.16g，10mmol)、4-(二苯基氨基)-苯硼酸(3.18g，11mmol)、30mL甲苯和10mL的2.5M碳酸钾水溶液加入到100mL的舒伦克(Schlenk)瓶中，用氩气进行抽换气。然后加入四三苯基磷钯(0.48g，0.4mmol)，80℃回流反应24h。冷却至室温后，将反应液用DCM进行萃取三次，水洗三次，无水硫酸钠干燥，过滤，旋干。用200-300目的硅胶进行柱层析，淋洗液为石油醚：DCM(1：1，V/V)，得到红色固体4.76g，产率82％。HRMS[M+H]+calcd.for C40H23NO4:581.1627；found:581.1643.
具体地，定义化合物1及化合物2分别具有式2、式3所示的结构，对所述化合物1及化合物2进行检验，所述化合物1及化合物2在纯膜下的荧光发射光谱如图2所示，所述化合物1及化合物2的基于B3LYP理论计算出最低单重态(S10)和最低三重态能级(T1)以及光致发光量子产率(PLQY)如下表1所示：
表1
Figure PCTCN2019086363-appb-000013
其中，PL peak为光致发光峰，S10为最低单重态能级，T 1为最低三重态能级，ΔE ST为最低单重态能级与最低三重态能级的能级差。
结合图2及表1可知，本发明的所述化合物1及化合物2的性能符合要求。
此外，本发明实施例还提供一种电致发光器件，包括上述的深红光热活化延迟荧光(TADF)材料。
请参阅图3，具体而言，所述电致发光器件100包括基底层1；空穴注入层2，位于所述基底层1上；空穴传输层3，位于所述空穴注入层2上；发光层4，位于所述空穴传输层3上；电子传输层5，位于所述发光层4上；以及阴极层6，位于所述电子传输层5上，其中所述发光 层4包括本发明所提供的深红光热活化延迟荧光(TADF)材料。
依据本发明的一实施例，在所述电致发光器件中，所述基底层1的材料包括ITO；所述空穴注入层2的材料包括2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲(HATCN)；所述空穴传输层3的材料包括4,4'-环己基二[N,N-二(4-甲基苯基)苯胺](TAPC)；所述电子传输层5的材料包括1,3,5-三(3-(3-吡啶基)苯基)苯(Tm3PyPB)；以及所述阴极层6的材料包括氟化锂及铝。
具体地，分别采用化合物1及化合物2作为发光层4制作器件100及器件200，并对所述器件100及器件200进行性能进行测量。其中，所述器件100及器件200中所述基底层1和所述空穴注入层2厚度为30nm。所述空穴传输层3的厚度为40nm。所述器件100的发光层4包括5％化合物1，厚度为40nm；所述器件200的发光层4包括5％化合物2，厚度为40nm。电子传输层5的厚度为40nm。阴极500中的氟化锂的厚度为1nm，铝的厚度为100nm。
进一步测量所述器件100及所述器件200的电流-亮度-电压特性，由带有校正过的硅光电二极管的Keithley源测量系统(Keithley 2400 Sourcemeter、Keithley 2000 Currentmeter)所完成，电致发光光谱是由法国JY公司 SPEX CCD3000光谱仪测量的，所有测量均在室温大气中完成。测得的器件100及器件200的性能如表2所示，可知器件100及器件200的性能符合要求。
表2
Figure PCTCN2019086363-appb-000014
据此，本发明实施例提供了一种深红光热活化延迟荧光(TADF)材料，通过巧妙的分子设计，合成了一系列含醌类受体的深红光热活化延迟荧光分子。而这类分子受体含有羰基结构，使得分子具有高的系间窜越速率常数和反系间窜越速率常数，能够有效抑制由于能隙规则导致的辐射跃迁速率的降低，从而获得高的PLQY。同时通过调节羰基在线性芳香结构中的位置，提高给受体的HOMO和LUMO的重叠程度，能够有效抑制器件的效率滚降，从而提高TADF分子的器件效率，利用本发明所提供的这些发光材料来制备一系列高性能的深红光TADF有机发光二极管(OLED)。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动 与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种深红光热活化延迟荧光材料，包括由受体A及给体D所组成的化合物，所述化合物具有如式1所示的结构通式：
    D-A式1
    其中所述受体A是择自下列结构式中任一者：
    Figure PCTCN2019086363-appb-100001
    Figure PCTCN2019086363-appb-100002
    以及
    所述给体D是择自下列结构式中任一者：
    Figure PCTCN2019086363-appb-100003
  2. 一种深红光热活化延迟荧光材料的制备方法，包括如下步骤：
    步骤S10、在含碱的溶液中加入化合物A-X及化合物D-B(OH) 2，其中所述X为卤素，所述A为具有下列结构式中任一者：
    Figure PCTCN2019086363-appb-100004
    所述D为具有下列结构式中任一者：
    Figure PCTCN2019086363-appb-100005
    步骤S20、在惰性气体下，向所述含碱的溶液加入钯催化剂，在第一温度下反应第一时长以得到反应液；
    步骤S30、将所述反应液冷却至第二温度，得到混合物；以及
    步骤S40、自所述混合物分离出所述深红光热活化延迟荧光材料，包括由受体A及给体D所组成的化合物，所述化合物具有如式1所示的结构通式：
    D-A式1。
  3. 如权利要求2所述的深红光热活化延迟荧光材料的制备方法，其中，所述第一温度为55℃至65℃，所述第一时长为12小时至36小时。
  4. 如权利要求2所述的深红光热活化延迟荧光材料的制备方法，其中，所述第二温度为室温。
  5. 如权利要求2所述的深红光热活化延迟荧光材料的制备方法，其中，所述步骤S10中，所述含碱的溶液为甲苯、所述碱为碳酸钾、以及所述钯催化剂为四三苯基磷钯。
  6. 如权利要求2所述的深红光热活化延迟荧光材料的制备方法，其中，所述步骤S30更包括将所述反应液经过萃取、水洗、脱水、过滤、以及离心干燥处理以得到所述混合物。
  7. 如权利要求2所述的深红光热活化延迟荧光材料的制备方法，其中，所述步骤S40系使用管柱层析进行分离，所述管柱层析所采用的淋洗液为体积比1:1的石油醚：二氯甲烷。
  8. 如权利要求2所述的深红光热活化延迟荧光材料的制备方法，其中所述化合物A-X为2-溴代并四苯二酮或2-溴代并五苯-5,7,12,14-四酮，所述化合物D-B(OH) 2为4-(二苯基氨基)-苯硼酸。
  9. 一种电致发光器件，包括：
    基底层；
    空穴注入层，位于所述基底层上；
    空穴传输层，位于所述空穴注入层上；
    发光层，位于所述空穴传输层上；
    电子传输层，位于所述发光层上；以及
    阴极层，位于所述电子传输层上，
    其中所述发光层包括如权利要求1所述的深红光热活化延迟荧光材料。
  10. 如权利要求9所述的电致发光器件，其中
    所述基底层的材料包括ITO；
    所述空穴注入层的材料包括2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲；
    所述空穴传输层的材料包括4,4'-环己基二[N,N-二(4-甲基苯基)苯胺]；
    所述电子传输层的材料包括1,3,5-三(3-(3-吡啶基)苯基)苯；以及
    所述阴极层的材料包括氟化锂及铝。
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