WO2020199244A1 - 液晶无机配向薄膜的制造方法 - Google Patents

液晶无机配向薄膜的制造方法 Download PDF

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WO2020199244A1
WO2020199244A1 PCT/CN2019/082628 CN2019082628W WO2020199244A1 WO 2020199244 A1 WO2020199244 A1 WO 2020199244A1 CN 2019082628 W CN2019082628 W CN 2019082628W WO 2020199244 A1 WO2020199244 A1 WO 2020199244A1
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film layer
nitrate solution
solution
baking
baking step
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张宇
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation

Definitions

  • the invention relates to a method for manufacturing a liquid crystal inorganic alignment film.
  • the method for preparing the alignment solution required in the preparation process is simple and has stable performance.
  • the advantage of inorganic materials as the alignment layer lies in the fact that inorganic materials have a low threshold voltage due to their low capacitance, so that they require less energy in the driving process.
  • strontium oxide (SrO) has a very high dielectric constant, a relatively narrow band gap and a low breakdown voltage; therefore, lanthanum (La) and yttrium (Y) have just been added to it because it has a relatively The larger band gap and higher breakdown voltage enable strontium oxide (SrO) to obtain both a higher dielectric constant and a wider band gap.
  • multi-component materials have better film-forming properties.
  • the advantage of the solution method is that the composition ratio of lanthanum (La), yttrium (Y), and strontium oxide (SrO) can be adjusted, and the crystalline film formed after annealing and the liquid crystal have strong Van der Waals force (Van der Waals force). ), no special alignment process is required.
  • La lanthanum
  • Y yttrium
  • SrO strontium oxide
  • the present invention provides a method for manufacturing an inorganic alignment film.
  • the method for preparing the alignment solution required for the preparation process is simple and has stable performance, thereby solving the problem of strontium oxide (SrO) in inorganic materials in the prior art. It has a very high dielectric constant, relatively narrow band gap and low breakdown voltage.
  • the main purpose of the present invention is to provide a method for manufacturing a liquid crystal inorganic alignment film, including:
  • the mixing step includes placing a lanthanum nitrate (La(NO 3 ) 3 ) solution, a yttrium nitrate (Y(NO 3 ) 3 ) solution, and a strontium nitrate (Sr(NO 3 ) 2 ) solution in a container, and stirring and mixing The lanthanum nitrate (La(NO 3 ) 3 ) solution, the yttrium nitrate (Y(NO 3 ) 3 ) solution, and the strontium nitrate (Sr(NO 3 ) 2 ) solution for a period of stirring time;
  • the standing reaction step includes placing the stirred and mixed lanthanum nitrate (La(NO 3 ) 3 ) solution, yttrium nitrate (Y(NO 3 ) 3 ) solution, and strontium nitrate (Sr(NO 3 ) 2 ) solution to stand still.
  • a period of standing time for the lanthanum nitrate (La(NO 3 ) 3 ) solution, the yttrium nitrate (Y(NO 3 ) 3 ) solution, and the strontium nitrate (Sr(NO 3 ) 2 ) solution to react Generate an alignment solution including lanthanum yttrium strontium oxide (LaYSr 3 O 6 ) and nitric anhydride (N 2 O 5 );
  • the coating step includes coating the alignment solution on the surface of an indium tin oxide (Indium Tin Oxide, ITO) layer to form a layer comprising lanthanum yttrium strontium oxide (LaYSr 3 O 6 ) and nitric anhydride (N 2 O 5 ) Of the film; and
  • ITO indium Tin Oxide
  • the baking step includes baking the film layer to crystallize lanthanum yttrium strontium oxide (LaYSr 3 O 6 ) in the film layer to form a liquid crystal inorganic alignment film.
  • LaYSr 3 O 6 lanthanum yttrium strontium oxide
  • the mixing step is performed under the condition of at least 75 degrees Celsius.
  • the stirring time in the mixing step is at least 2 hours.
  • the standing reaction step is performed in air, and the standing time in the standing reaction step is at least 24 hours.
  • the coating step is performed by spin coating.
  • the baking step includes a main baking step, and the main baking step is to bake the film layer at 400 to 800 degrees Celsius.
  • the main baking step is to bake the film layer at 500 degrees Celsius.
  • the main baking step includes baking the film layer for at least 3 hours.
  • the baking step includes a pre-baking step and a main baking step; the pre-baking step is to bake the film layer at at least 100 degrees Celsius; the main baking step The baking step is performed after the pre-baking step, and the film layer is baked at 500 degrees Celsius.
  • the pre-baking step includes baking the film layer for at least 5 minutes; the main baking step includes baking the film layer for at least 3 hours.
  • Another object of the present invention is to provide a method for manufacturing a liquid crystal inorganic alignment film, including:
  • the mixing step includes placing the lanthanum nitrate solution, the yttrium nitrate solution, and the strontium nitrate solution in a container, and stirring and mixing the lanthanum nitrate solution, the yttrium nitrate solution, and the strontium nitrate solution for a stirring time;
  • the step of standing reaction includes putting the stirred and mixed lanthanum nitrate solution, yttrium nitrate solution, and strontium nitrate solution to stand for a standing period of time, so that the lanthanum nitrate solution, the yttrium nitrate solution, and the strontium nitrate solution
  • the solution reaction generates an alignment solution including lanthanum, yttrium, strontium oxide and nitric anhydride;
  • the coating step includes coating the alignment solution on the surface of the indium tin oxide layer to form a film layer including lanthanum yttrium strontium oxide and nitric anhydride;
  • the baking step includes baking the film layer to crystallize the lanthanum yttrium strontium oxide in the film layer to form a liquid crystal inorganic alignment film;
  • mixing step is performed under the condition of at least 75 degrees Celsius
  • stirring time in the mixing step is at least 2 hours
  • the standing reaction step is performed in air, and the standing time in the standing reaction step is at least 24 hours;
  • the coating step is performed by spin coating.
  • the baking step includes a main baking step, and the main baking step is to bake the film layer at 400 to 800 degrees Celsius.
  • the main baking step is to bake the film layer at 500 degrees Celsius.
  • the main baking step includes baking the film layer for at least 3 hours.
  • the baking step further includes a pre-baking step; the pre-baking step is to bake the film layer at at least 100 degrees Celsius; the main baking step is The pre-baking step is performed after the step, and the film layer is baked at 500 degrees Celsius.
  • the pre-baking step includes baking the film layer for at least 5 minutes; the main baking step includes baking the film layer for at least 3 hours.
  • the liquid crystal inorganic alignment film produced by the method for manufacturing the inorganic alignment film of the present invention has both a higher dielectric constant and a wider band gap.
  • the liquid crystal inorganic alignment film prepared by the method for manufacturing the inorganic alignment film of the present invention has strong van der Waals force between the liquid crystal inorganic alignment film and the liquid crystal, and no special alignment process is required.
  • Fig. 1 is a side cross-sectional view of the indium tin oxide layer and its upper film layer of the present invention.
  • FIG. 2 is a flowchart of the steps of the method for manufacturing the liquid crystal inorganic alignment film of the present invention.
  • Fig. 3 is a flowchart of another step of the method for manufacturing the liquid crystal inorganic alignment film of the present invention.
  • the manufacturing method of the liquid crystal inorganic alignment film of the present invention includes: a mixing step S01, a standing reaction step S02, a coating step S03, and a baking step S04.
  • the mixing step S01 includes placing lanthanum nitrate (La(NO 3 ) 3 ) solution, yttrium nitrate (Y(NO 3 ) 3 ) solution, and strontium nitrate (Sr(NO 3 ) 2 ) solution in a container, And stirring and mixing the lanthanum nitrate (La(NO 3 ) 3 ) solution, the yttrium nitrate (Y(NO 3 ) 3 ) solution, and the strontium nitrate (Sr(NO 3 ) 2 ) solution for a period of stirring time.
  • the mixing step is performed under the condition of at least 75 degrees Celsius.
  • the stirring time in the mixing step is at least 2 hours.
  • the standing reaction step S02 includes mixing the stirred and mixed lanthanum nitrate (La(NO 3 ) 3 ) solution, yttrium nitrate (Y(NO 3 ) 3 ) solution, and strontium nitrate (Sr(NO 3 ) 2 ) solution Let stand for a period of time, so that the lanthanum nitrate (La(NO 3 ) 3 ) solution, the yttrium nitrate (Y(NO 3 ) 3 ) solution, and the strontium nitrate (Sr(NO 3 ) 2 ) The solution reacts to generate an alignment solution including lanthanum yttrium strontium oxide (LaYSr 3 O 6 ) and nitric anhydride (N 2 O 5 ).
  • LaYSr 3 O 6 lanthanum yttrium strontium oxide
  • N 2 O 5 nitric anhydride
  • the standing reaction step S02 is performed in air, and the standing time in the standing reaction step S02 is at least 24 hours.
  • the coating step S03 includes coating the alignment solution on the surface of the indium tin oxide (ITO) layer 10 to form a layer including lanthanum yttrium strontium oxide (LaYSr 3 O 6 ) and nitric anhydride ( N 2 O 5 ) of the film layer 20.
  • the coating step S03 is performed by spin coating.
  • the baking step S04 includes baking the film layer 20 to crystallize lanthanum yttrium strontium oxide (LaYSr 3 O 6 ) in the film layer 20 to form a liquid crystal inorganic alignment film.
  • LaYSr 3 O 6 lanthanum yttrium strontium oxide
  • the baking step S04 includes a main baking step S042, and the main baking step S042 is to bake the film layer 20 under the condition of 400 to 800 degrees Celsius. .
  • the main baking step S042 is to bake the film layer 20 at 500 degrees Celsius.
  • the main baking step S042 includes baking the film layer 20 for at least 3 hours.
  • the baking step S04 includes a pre-baking step S041 and a main baking step S042; the pre-baking step S041 includes at least 100 degrees Celsius The film layer 20 is baked; the main baking step S042 is performed after the pre-baking step S041, and the film layer 20 is baked at 400 to 800 degrees Celsius.
  • the main baking step S042 is to bake the film layer 20 at 400 to 800 degrees Celsius.
  • the pre-baking step S041 includes baking the film layer 20 for at least 5 minutes; the main baking step S042 includes baking the film layer 20 for at least 3 hours. More preferably, the main baking step S042 is to bake the film layer 20 at 500 degrees Celsius.
  • the liquid crystal inorganic alignment film produced by the method for manufacturing the inorganic alignment film of the present invention has both a higher dielectric constant and a wider band gap.
  • the liquid crystal inorganic alignment film prepared by the method for manufacturing the inorganic alignment film of the present invention has strong van der Waals force between the liquid crystal inorganic alignment film and the liquid crystal, and no special alignment process is required.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

一种液晶无机配向薄膜的制造方法，包括：混合步骤（S01），包括将硝酸镧溶液、硝酸钇溶液、以及硝酸锶溶液放置到一容器中，并且搅拌混合溶液达一段搅拌时间；静置反应步骤（S02），包括将搅拌混合后的溶液静置达一段静置时间，以使溶液反应生成包括镧钇锶氧以及硝酐的配向溶液；涂布步骤（S03），包括将配向溶液涂布到一氧化铟锡层的表面上以形成一包括镧钇锶氧以及硝酐的膜层；以及烘烤步骤（S04），包括对膜层进行烘烤以使膜层中的镧钇锶氧结晶而形成一液晶无机配向薄膜。制造出的液晶无机配向薄膜同时具有较高的介电常数和较宽的带隙。

Description

液晶无机配向薄膜的制造方法 技术领域
本发明是有关于一种液晶无机配向薄膜的制造方法，其制备过程所需的配向溶液的制备方法简单，性能稳定。
 背景技术
与有机材料相比，无机材料作为配向层的优势在于：因无机材料电容值低从而具有很低的阈值电压，从而在驱动过程中需要的能量小。在这些无机材料当中，氧化锶(SrO)具有非常高的介电常数，相对窄的带隙和低的击穿电压；因此在其中刚加入镧(La)和钇(Y)，因为其具有相对较大的带隙和较高击穿电压，从而使得氧化锶(SrO)同时获得了较高的介电常数和较宽的带隙。
Figure 5e77
且多组分材料具有更加优秀的成膜性能。
溶液法的优势在于，镧(La)、钇(Y)、氧化锶(SrO)的组分比可以调节，且退火后形成的结晶薄膜与液晶之间具有较强的范德华力(Van der Waals force)，不需要进行专门的配向工艺。
故，有必要提供一种液晶无机配向薄膜的制造方法，以解决现有技术所存在的问题。
 技术问题
有鉴于此，本发明提供一种无机配向薄膜的制造方法，其制备过程所需的配向溶液的制备方法简单，性能稳定，藉此解决现有技术所存在的无机材料当中的氧化锶(SrO)具有非常高的介电常数，相对窄的带隙和低的击穿电压问题。
 技术解决方案
本发明的主要目的在于提供一种液晶无机配向薄膜的制造方法，包括：
混和步骤，包括将硝酸镧(La(NO 3) 3)溶液、硝酸钇(Y(NO 3) 3)溶液、以及硝酸锶(Sr(NO 3) 2) 溶液放置到一容器中，并且搅拌混合所述硝酸镧(La(NO 3) 3)溶液、所述硝酸钇(Y(NO 3) 3)溶液、以及所述硝酸锶(Sr(NO 3) 2) 溶液达一段搅拌时间；
静置反应步骤，包括将搅拌混合后的硝酸镧(La(NO 3) 3)溶液、硝酸钇(Y(NO 3) 3)溶液、以及硝酸锶(Sr(NO 3) 2)溶液静置达一段静置时间，以使所述硝酸镧(La(NO 3) 3)溶液、所述硝酸钇(Y(NO 3) 3)溶液、以及所述硝酸锶(Sr(NO 3) 2)溶液反应生成包括镧钇锶氧(LaYSr 3O 6)以及硝酐(N 2O 5)的配向溶液；
涂布步骤，包括将所述配向溶液涂布到一氧化铟锡(Indium Tin Oxide, ITO)层的表面上以形成一包括镧钇锶氧(LaYSr 3O 6)以及硝酐(N 2O 5)的膜层；以及
烘烤步骤，包括对所述膜层进行烘烤以使所述膜层中的镧钇锶氧(LaYSr 3O 6) 结晶而形成一液晶无机配向薄膜。
在本发明一实施例中，在所述混合步骤是在至少摄氏75度的条件下执行。
在本发明一实施例中，所述混合步骤的所述搅拌时间为至少2小时。
在本发明一实施例中，所述静置反应步骤是在空气中进行，且所述静置反应步骤中的所述静置时间是至少24小时。
在本发明一实施例中，所述涂布步骤是以采用旋涂方式进行。
在本发明一实施例中，所述烘烤步骤包括主烘烤步骤，所述主烘烤步骤是在摄氏400至800度的条件下烘烤所述膜层。
在本发明一实施例中，所述主烘烤步骤是在摄氏500度的条件下烘烤所述膜层。
在本发明一实施例中，所述主烘烤步骤包括烘烤所述膜层至少达3小时。
在本发明一实施例中，所述烘烤步骤包括预先烘烤步骤以及主烘烤步骤；所述预先烘烤步骤是在至少摄氏100度的条件下烘烤所述膜层；所述主烘烤步骤是在所述预先烘烤步骤后执行，且是在摄氏500度的条件下烘烤所述膜层。
在本发明一实施例中，所述预先烘烤步骤包括烘烤所述膜层至少达5分钟；所述主烘烤步骤包括烘烤所述膜层至少达3小时。
本发明的另一目的在于提供一种液晶无机配向薄膜的制造方法，包括：
混和步骤，包括将硝酸镧溶液、硝酸钇溶液、以及硝酸锶溶液放置到一容器中，并且搅拌混合所述硝酸镧溶液、所述硝酸钇溶液、以及所述硝酸锶溶液达一段搅拌时间；
静置反应步骤，包括将搅拌混合后的硝酸镧溶液、硝酸钇溶液、以及硝酸锶溶液静置达一段静置时间，以使所述硝酸镧溶液、所述硝酸钇溶液、以及所述硝酸锶溶液反应生成包括镧钇锶氧以及硝酐的配向溶液；
涂布步骤，包括将所述配向溶液涂布到一氧化铟锡层的表面上以形成一包括镧钇锶氧以及硝酐的膜层；以及
烘烤步骤，包括对所述膜层进行烘烤以使所述膜层中的镧钇锶氧结晶而形成一液晶无机配向薄膜；
其中在所述混合步骤是在至少摄氏75度的条件下执行；
其中所述混合步骤的所述搅拌时间为至少2小时；
其中所述静置反应步骤是在空气中进行，且所述静置反应步骤中的所述静置时间是至少24小时；
其中所述涂布步骤是以采用旋涂方式进行。
其中所述烘烤步骤包括主烘烤步骤，所述主烘烤步骤是在摄氏400至800度的条件下烘烤所述膜层。
在本发明一实施例中，所述主烘烤步骤是在摄氏500度的条件下烘烤所述膜层。
在本发明一实施例中，所述主烘烤步骤包括烘烤所述膜层至少达3小时。
在本发明一实施例中，所述烘烤步骤还包括预先烘烤步骤；所述预先烘烤步骤是在至少摄氏100度的条件下烘烤所述膜层；所述主烘烤步骤是在所述预先烘烤步骤后执行，且是在摄氏500度的条件下烘烤所述膜层。
在本发明一实施例中，所述预先烘烤步骤包括烘烤所述膜层至少达5分钟；所述主烘烤步骤包括烘烤所述膜层至少达3小时。
 有益效果
与现有技术相比较，本发明无机配向薄膜的制造方法所制造出的液晶无机配向薄膜同时具有较高的介电常数和较宽的带隙。与现有技术的无机配向薄膜相比，本发明无机配向薄膜的制造方法所制备液晶无机配向薄膜与液晶之间的范德华力强，无需专门的配向制程。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，配合所附图式，作详细说明如下：
 附图说明
图1本发明的氧化铟锡层及其上膜层的侧面剖视图。
图2是本发明液晶无机配向薄膜的制造方法的步骤流程图。
图3是本发明液晶无机配向薄膜的制造方法的另一步骤流程图。
 本发明的实施方式
请参照图1及图2，本发明液晶无机配向薄膜的制造方法，包括：混和步骤S01、静置反应步骤S02、涂布步骤S03、以及烘烤步骤S04。
所述混和步骤S01，包括将硝酸镧(La(NO 3) 3)溶液、硝酸钇(Y(NO 3) 3)溶液、以及硝酸锶(Sr(NO 3) 2) 溶液放置到一容器中，并且搅拌混合所述硝酸镧(La(NO 3) 3)溶液、所述硝酸钇(Y(NO 3) 3)溶液、以及所述硝酸锶(Sr(NO 3) 2) 溶液达一段搅拌时间。在本发明一实施例中，在所述混合步骤是在至少摄氏75度的条件下执行。在本发明一实施例中，所述混合步骤的所述搅拌时间为至少2小时。
所述静置反应步骤S02，包括将搅拌混合后的硝酸镧(La(NO 3) 3)溶液、硝酸钇(Y(NO 3) 3)溶液、以及硝酸锶(Sr(NO 3) 2)溶液静置达一段静置时间，以使所述硝酸镧(La(NO 3) 3)溶液、所述硝酸钇(Y(NO 3) 3)溶液、以及所述硝酸锶(Sr(NO 3) 2)溶液反应生成包括镧钇锶氧(LaYSr 3O 6)以及硝酐(N 2O 5)的配向溶液。在本发明一实施例中，所述静置反应步骤S02是在空气中进行，且所述静置反应步骤S02中的所述静置时间是至少24小时。所述反应的化学反应式如下：La(NO 3) 3 + Y(NO 3) 3 + 3Sr(NO 3) 2 = LaYSr 3O 6 + 6N 2O 5，反应后得到镧钇锶氧(LaYSr 3O 6)以及硝酐(N 2O 5)溶液。
所述涂布步骤S03，包括将所述配向溶液涂布到一氧化铟锡(Indium Tin Oxide, ITO)层10的表面上以形成一包括镧钇锶氧(LaYSr 3O 6)以及硝酐(N 2O 5)的膜层20。在本发明一实施例中，所述涂布步骤S03是以采用旋涂方式进行。
所述烘烤步骤S04，包括对所述膜层20进行烘烤以使所述膜层20中的镧钇锶氧(LaYSr 3O 6) 结晶而形成一液晶无机配向薄膜。
请参照图3，在本发明一实施例中，所述烘烤步骤S04包括主烘烤步骤S042，所述主烘烤步骤S042是在摄氏400至800度的条件下烘烤所述膜层20。较佳者，所述主烘烤步骤S042是在摄氏500度的条件下烘烤所述膜层20。在本发明一实施例中，所述主烘烤步骤S042包括烘烤所述膜层20至少达3小时。
请参照图3，在本发明另一实施例中，所述烘烤步骤S04包括预先烘烤步骤S041以及主烘烤步骤S042；所述预先烘烤步骤S041是包括在至少摄氏100度的条件下烘烤所述膜层20；所述主烘烤步骤S042是包括在所述预先烘烤步骤S041后执行，且是在摄氏400至800度的条件下烘烤所述膜层20。较佳者，所述主烘烤步骤S042是在摄氏400至800度的条件下烘烤所述膜层20。所述预先烘烤步骤S041包括烘烤所述膜层20至少达5分钟；所述主烘烤步骤S042包括烘烤所述膜层20至少达3小时。更佳者，所述主烘烤步骤S042是在摄氏500度的条件下烘烤所述膜层20。
与现有技术相比较，本发明无机配向薄膜的制造方法所制造出的液晶无机配向薄膜同时具有较高的介电常数和较宽的带隙。与现有技术的无机配向薄膜相比，本发明无机配向薄膜的制造方法所制备液晶无机配向薄膜与液晶之间的范德华力强，无需专门的配向制程。

Claims (15)

  1. 一种液晶无机配向薄膜的制造方法，包括：
    混和步骤，包括将硝酸镧溶液、硝酸钇溶液、以及硝酸锶溶液放置到一容器中，并且搅拌混合所述硝酸镧溶液、所述硝酸钇溶液、以及所述硝酸锶溶液达一段搅拌时间；
    静置反应步骤，包括将搅拌混合后的硝酸镧溶液、硝酸钇溶液、以及硝酸锶溶液静置达一段静置时间，以使所述硝酸镧溶液、所述硝酸钇溶液、以及所述硝酸锶溶液反应生成包括镧钇锶氧以及硝酐的配向溶液；
    涂布步骤，包括将所述配向溶液涂布到一氧化铟锡层的表面上以形成一包括镧钇锶氧以及硝酐的膜层；以及
    烘烤步骤，包括对所述膜层进行烘烤以使所述膜层中的镧钇锶氧结晶而形成一液晶无机配向薄膜。
  2. 如权利要求1所述的制造方法，其中在所述混合步骤是在至少摄氏75度的条件下执行。
  3. 如权利要求1所述的制造方法，其中所述混合步骤的所述搅拌时间为至少2小时。
  4. 如权利要求1所述的制造方法，其中所述静置反应步骤是在空气中进行，且所述静置反应步骤中的所述静置时间是至少24小时。
  5. 如权利要求1所述的制造方法，其中所述涂布步骤是以采用旋涂方式进行。
  6. 如权利要求1所述的制造方法，其中所述烘烤步骤包括主烘烤步骤，所述主烘烤步骤是在摄氏400至800度的条件下烘烤所述膜层。
  7. 如权利要求6所述的制造方法，其中所述主烘烤步骤是在摄氏500度的条件下烘烤所述膜层。
  8. 如权利要求7所述的制造方法，其中所述主烘烤步骤包括烘烤所述膜层至少达3小时。
  9. 如权利要求1所述的制造方法，其中所述烘烤步骤包括预先烘烤步骤以及主烘烤步骤；所述预先烘烤步骤是在至少摄氏100度的条件下烘烤所述膜层；所述主烘烤步骤是在所述预先烘烤步骤后执行，且是在摄氏500度的条件下烘烤所述膜层。
  10. 如权利要求9所述的制造方法，其中所述预先烘烤步骤包括烘烤所述膜层至少达5分钟；所述主烘烤步骤包括烘烤所述膜层至少达3小时。
  11. 一种液晶无机配向薄膜的制造方法，包括：
    混和步骤，包括将硝酸镧溶液、硝酸钇溶液、以及硝酸锶溶液放置到一容器中，并且搅拌混合所述硝酸镧溶液、所述硝酸钇溶液、以及所述硝酸锶溶液达一段搅拌时间；
    静置反应步骤，包括将搅拌混合后的硝酸镧溶液、硝酸钇溶液、以及硝酸锶溶液静置达一段静置时间，以使所述硝酸镧溶液、所述硝酸钇溶液、以及所述硝酸锶溶液反应生成包括镧钇锶氧以及硝酐的配向溶液；
    涂布步骤，包括将所述配向溶液涂布到一氧化铟锡层的表面上以形成一包括镧钇锶氧以及硝酐的膜层；以及
    烘烤步骤，包括对所述膜层进行烘烤以使所述膜层中的镧钇锶氧结晶而形成一液晶无机配向薄膜；
    其中在所述混合步骤是在至少摄氏75度的条件下执行；
    其中所述混合步骤的所述搅拌时间为至少2小时；
    其中所述静置反应步骤是在空气中进行，且所述静置反应步骤中的所述静置时间是至少24小时；
    其中所述涂布步骤是以采用旋涂方式进行。
    其中所述烘烤步骤包括主烘烤步骤，所述主烘烤步骤是在摄氏400至800度的条件下烘烤所述膜层。
  12. 如权利要求11所述的制造方法，其中所述主烘烤步骤是在摄氏500度的条件下烘烤所述膜层。
  13. 如权利要求12所述的制造方法，其中所述主烘烤步骤包括烘烤所述膜层至少达3小时。
  14. 如权利要求11所述的制造方法，其中所述烘烤步骤还包括预先烘烤步骤；所述预先烘烤步骤是在至少摄氏100度的条件下烘烤所述膜层；所述主烘烤步骤是在所述预先烘烤步骤后执行，且是在摄氏500度的条件下烘烤所述膜层。
  15. 如权利要求14所述的制造方法，其中所述预先烘烤步骤包括烘烤所述膜层至少达5分钟；所述主烘烤步骤包括烘烤所述膜层至少达3小时。
PCT/CN2019/082628 2019-04-04 2019-04-15 液晶无机配向薄膜的制造方法 Ceased WO2020199244A1 (zh)

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