WO2020194631A1 - Dispositif de dépôt en phase vapeur - Google Patents

Dispositif de dépôt en phase vapeur Download PDF

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Publication number
WO2020194631A1
WO2020194631A1 PCT/JP2019/013462 JP2019013462W WO2020194631A1 WO 2020194631 A1 WO2020194631 A1 WO 2020194631A1 JP 2019013462 W JP2019013462 W JP 2019013462W WO 2020194631 A1 WO2020194631 A1 WO 2020194631A1
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WO
WIPO (PCT)
Prior art keywords
crucible
vapor deposition
deposition apparatus
metal net
vapor
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PCT/JP2019/013462
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English (en)
Japanese (ja)
Inventor
海軍 栗
時由 梅田
優人 塚本
植竹　猶基
Original Assignee
シャープ株式会社
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Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to PCT/JP2019/013462 priority Critical patent/WO2020194631A1/fr
Publication of WO2020194631A1 publication Critical patent/WO2020194631A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/87—Arrangements for heating or cooling
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a vapor deposition apparatus including a crucible that accommodates a vapor deposition material and sublimates or evaporates and releases the vapor deposition material.
  • organic EL material When producing an organic EL display device, it is necessary to deposit organic EL material. At this time, the organic EL material is uniformly discharged not only near the wall surface of the vapor deposition source but also near the center, so that a uniform vapor deposition film can be obtained.
  • the organic EL material In order to ensure a stable deposition rate, the organic EL material must be heated within a time that does not deteriorate the metal surface of the crucible. In addition, in order to make the characteristics of the organic EL display device uniform, it is necessary to consider the film thickness for setting the organic layer of each color.
  • a red light emitting layer and a green light emitting layer can be formed by a vapor deposition method using a mixed material containing a low molecular weight material and a high molecular weight material as a plurality of types of vapor deposition materials. It is disclosed.
  • Patent Document 2 discloses a vapor deposition apparatus for co-depositing a mixed material containing a plurality of types of vapor deposition materials.
  • the organic EL material since the organic EL material has low thermal conductivity, it causes a problem that only the vicinity of the wall surface of the vapor deposition source sublimates or evaporates, whereas the vicinity of the center remains without sublimation or evaporation.
  • the vapor-deposited material may suddenly collapse. In such a case, the film formation rate fluctuates greatly, and a uniform vapor deposition film cannot be obtained.
  • the metal surface of the crucible is heated for a long period of time, the metal surface of the crucible is likely to deteriorate and the vapor deposition rate is often unstable. As a result, a large deviation occurs in the film thickness for setting the organic layer of each color, and as a result, the characteristics of the organic EL display device greatly vary.
  • one aspect of the present invention is to provide a vapor deposition apparatus capable of increasing thermal conductivity and significantly improving the stability of the vapor deposition rate.
  • the thin-film deposition apparatus is a vapor deposition apparatus provided with a crucible that accommodates the vapor-deposited material and releases the vapor-deposited material, and the crucible divides the inside thereof. It is characterized in that a metal mesh structure is provided as described above.
  • a thin-film deposition apparatus capable of increasing the thermal conductivity for a thin-film deposition material and significantly improving the stability of the thin-film deposition rate.
  • FIG. 1 It is a block diagram which shows the structure of the vapor deposition apparatus of this invention.
  • the configuration of the crucible of the vapor deposition apparatus of the comparative example is shown, (a) is a cross-sectional view of the crucible of the vapor deposition apparatus, (b) is a vertical sectional view of the crucible of the vapor deposition apparatus, and (c). Is a top view of the crucible of the vapor deposition apparatus.
  • the crucible of the vapor deposition apparatus according to the first embodiment is shown, (a) is a cross-sectional view of the crucible of the vapor deposition apparatus, (b) is a vertical sectional view of the crucible of the vapor deposition apparatus, and (c).
  • FIG. 3D is an explanatory view showing a planar metal net.
  • the crucible of the vapor deposition apparatus according to the second embodiment is shown, (a) is a cross-sectional view of the crucible of the vapor deposition apparatus, (b) is a vertical sectional view of the crucible of the vapor deposition apparatus, and (c). Is a top view of the crucible of the vapor deposition apparatus, and FIG. 3D is an explanatory view showing a three-dimensional metal net.
  • the crucible of the vapor deposition apparatus according to the second embodiment is shown, and (a) shows a plurality of planar metal nets parallel to the vertical direction (in the height direction) in the vertical cross-sectional view of FIG. 3 (b). It is explanatory drawing which shows the case of juxtaposing such as. (B) is an explanatory view showing a case where a plurality of planar metal nets are arranged side by side in the horizontal direction in the vertical cross-sectional view of FIG. 3 (b). It shows the crucible of the vapor deposition apparatus which concerns on Embodiment 2.
  • FIG. 1A is an explanatory diagram showing a case where the planar metal net is provided so that the mesh spacing on the upper surface side is narrower than the mesh spacing on the bottom surface side in the depth direction of the crucible.
  • (B) is an explanatory view showing a case where the planar metal net is provided so that the distance between the meshes near the center of the crucible is narrower than the distance between the meshes on the end side of the crucible. It shows the crucible of the vapor deposition apparatus which concerns on Embodiment 2.
  • (A) is an explanatory view showing a case where the structure (shape) of a plurality of planar metal nets is skewered.
  • (B) is an explanatory view showing a case where the structure (shape) of the plurality of planar metal nets is X-shaped.
  • (C) is an explanatory diagram showing a case where the structure (shape) of the plurality of planar metal nets is * (asterisk).
  • (D) is an explanatory view showing a case where the structure (shape) of the plurality of planar metal nets is in the shape of a rice character.
  • Embodiment 1 of the present invention will be described in detail below with reference to FIGS. 1 to 3 and 5 to 7.
  • the vapor deposition apparatus 5 includes, for example, a crystal oscillator 2 for detecting a vapor deposition rate that detects the vapor deposition rate of the vapor deposition particles when the vapor deposition particles are injected.
  • the vapor deposition apparatus 5 further includes a tube portion 4 having a conduction opening (not shown) capable of inducing vapor deposition particles from a nozzle (not shown) in the vapor deposition source 1 to the crystal oscillator 2.
  • the thin-film deposition source 1 is further provided with a thin-film deposition 7, and a thin-film deposition material is simultaneously applied as a vapor-deposited film 6 to a substrate 3 which is a substrate to be vapor-deposited (a substrate to be deposited) from the cell 7.
  • a co-deposited film formed (co-deposited) is formed (deposited).
  • the bottom of the crucible 7 is filled with an organic EL material, and then a flat metal net 7a (metal mesh structure) is further provided on the organic EL material (see (d) in FIG. 3).
  • the flat metal net 7a is provided so that at least a part of the end portion thereof contacts the inner wall of the crucible 7.
  • a mesh may be provided in the vapor-deposited material.
  • the crucible 7 is provided with a flat metal net 7a so as to divide the inside of the crucible 7.
  • the planar metal net 7a is provided so that the distance between the meshes near the center of the crucible 7 is narrower than the distance between the meshes on the end side of the crucible 7. This is preferable from the viewpoint of efficiently receiving heat from the organic EL material.
  • the flat metal net 7a is provided so that the mesh spacing on the upper surface side is narrower than the mesh spacing on the bottom surface side in the depth direction of the crucible 7. It is preferable from the viewpoint that the organic EL material can be heated efficiently.
  • the flat metal net 7a is made of a metal alloy material having high thermal conductivity, for example, a titanium alloy, similar to the crucible 7. Further, the number of flat metal nets 7a installed is not limited to one, and may be a plurality.
  • a plurality of planar metal nets 7a are arranged side by side so as to be parallel to the vertical direction (height direction) in the vertical sectional view of FIG. 3B. You may.
  • a plurality of planar metal nets 7a may be arranged side by side in the horizontal direction in the vertical cross-sectional view of FIG. 3B.
  • the structure (shape) of the plurality of planar metal nets 7a for example, skewered shape (see (a) of FIG. 7), X shape (see (b) of FIG. 7), * shape ((see FIG. 7 (b)) c)) or a structure (shape) such as a US character (see (d) in FIG. 7) may be adopted.
  • the plurality of flat metal nets 7a may be inclined with respect to the inner wall of the crucible 7, and the plurality of flat metal nets may intersect each other.
  • the size of the flat metal net 7a varies depending on the internal size of the crucible 7.
  • the crucible 7 has two types (host and dopant).
  • the length inside the crucible 7 (the length in the horizontal direction in the vertical sectional view of FIG. 3B) is about 1000 mm to 1200 mm and is high.
  • the length (length in the vertical direction in the vertical cross-sectional view of FIG. 3B) is 200 mm to 300 mm.
  • the size of the inside of the crucible 7 is different, and the size of the inside of the crucible for the host material (the lateral length in (a) of FIG. 3) is about 40 mm to 80 mm, and the size of the inside of the crucible for the dopant material.
  • the crucible is 20-40 mm.
  • the planar metal net 7a is made of, for example, a heat generating material. This material may generate heat when energized. Further, the flat metal net 7a is movably provided in the crucible 7.
  • the thin-film deposition apparatus 5 may be provided with a liquid level sensor, and may be further provided with a control unit for controlling the movement of the planar metal net 7a below the liquid level of the vapor-deposited material.
  • the control unit controls the position of the planar metal net 7a so as to prevent the heat generating material from coming out above the liquid surface (deposited material).
  • the liquid level sensor is not particularly limited as long as it is a sensor such as a resistor that can handle the temperature inside the crucible 7. By providing such a liquid level sensor, it is possible to prevent the heat generating material from coming out above the liquid level.
  • FIGS. 3A to 3C are a cross-sectional view, a vertical cross-sectional view, and a top view when the organic EL material is heated in the crucible 7, respectively.
  • FIG. 3D is an explanatory view showing an overall view of the planar metal net 7a in FIG. 3C.
  • the solid line arrow means the heating of the organic EL material
  • the broken line arrow means the sublimation or evaporation of the organic EL material.
  • the organic EL material has low thermal conductivity, but (1) the organic EL material near the wall surface of the vapor deposition source 1 is heated and the organic EL material is heated. (2) The organic EL material in contact with the flat metal net 7a and the organic EL material in the vicinity of the flat metal net 7a are heated. Note that FIG. 3D is an explanatory view showing the planar metal net 7a.
  • the organic EL material is significantly heated by the amount of heating in (2) above, as compared with the case of the comparative example ((a) to (c) in FIG. 2). (The area of the organic EL material that receives heat is significantly increased by the amount of heating in (2) above).
  • the solid line arrows in FIGS. 2A to 2C mean heating of the organic EL material, and the broken line arrow means sublimation or evaporation of the organic EL material.
  • the organic EL material since the organic EL material has low thermal conductivity, it is heated, sublimated or evaporated, and vapor-deposited only in the vicinity of the wall surface of the vapor deposition source. In other words, in the region other than the vicinity of the wall surface of the vapor deposition source, the organic EL material causes a problem that it remains unheated to the extent that it is sublimated or evaporated and vapor-deposited. In addition, the organic EL material may suddenly collapse, resulting in large fluctuations in the film formation rate of the vapor deposition film.
  • the area to be heated in the first embodiment is much wider than that in the comparative examples shown in FIGS. 2 (a) to 2 (c), so that the organic EL material is the vapor deposition source 1. It will be heated and sublimated or evaporated not only near the wall surface but also in the central region. As a result, the organic EL material receives heat and is vapor-deposited in far more regions than in the case of the above comparative example. Further, the crucible 7 shown in FIGS. 3 (a) to 3 (c) surely solves the problem that the organic EL material suddenly collapses, and as a result, the film formation rate of the vapor-deposited film greatly fluctuates. can do.
  • the amount of the organic EL material decreases with the vapor deposition time, but since the flat metal net 7a is provided so as to be movable in the crucible 7, the flat metal net 7a is provided according to the remaining amount of the organic EL material.
  • the position of 7a will be adjusted automatically. That is, the position of the planar metal net 7a in the crucible 7 is automatically lowered as the amount of the organic EL material decreases.
  • the thermal conductivity, heating efficiency, heating uniformity, etc. for the organic EL material can all be improved and the stability of the vapor deposition rate can be improved.
  • the crucible 7 and the flat metal net 7a can be cleaned separately, the cleaning ability of the crucible 7 and the flat metal net 7a can be increased, and the vapor deposition accuracy can be improved. It becomes possible.
  • Embodiment 2 of the present invention will be described in detail below with reference to FIGS. 1 and 4.
  • the crucible 7 provided in the vapor deposition source 1 of the vapor deposition apparatus 5 of the second embodiment further improves the thermal conductivity, heating uniformity, etc. with respect to the powdery organic EL material, and remarkably improves the stability of the vapor deposition rate. It has a structure that can be used. This will be described in detail below.
  • the vapor deposition apparatus 5 includes, for example, a crystal oscillator 2 for detecting a vapor deposition rate that detects the vapor deposition rate of the vapor deposition particles when the vapor deposition particles are injected.
  • the vapor deposition apparatus 5 further includes a tube portion 4 having a conduction opening (not shown) capable of inducing vapor deposition particles from a nozzle (not shown) in the vapor deposition source 1 to the crystal oscillator 2.
  • the thin-film deposition source 1 is further provided with the above-mentioned ⁇ ⁇ 7, and the vapor-deposited material is used as the vapor-deposited film 6 on the substrate 3 which is the substrate to be vapor-deposited (the substrate to be deposited) from the pit 7. At the same time, a co-deposited film formed (co-deposited) is formed (deposited).
  • the bottom of the crucible 7 is filled with an organic EL material, and then a three-dimensional metal net 7b (metal mesh structure) is further provided on the organic EL material.
  • the three-dimensional metal net 7b is provided so that at least a part of the end portion thereof contacts the inner wall of the crucible 7.
  • the crucible 7 is provided with a three-dimensional metal net 7a so as to divide the inside of the crucible 7.
  • the three-dimensional metal net 7b may be provided so that the space between the meshes near the center of the crucible 7 is narrower than the space between the meshes on the end side of the crucible 7. Further, the three-dimensional metal net 7b may be provided so that the mesh spacing on the upper surface side is narrower than the mesh spacing on the bottom surface side in the depth direction of the crucible 7. However, it is preferable that these meshes are provided so as to have a uniform structure from the viewpoint of efficiently receiving heat from the organic EL material.
  • the three-dimensional metal net 7b may be provided so that the mesh spacing on the upper surface side is narrower than the mesh spacing on the bottom surface side in the depth direction of the crucible 7. It is preferable that these meshes are provided so as to be uniform from the viewpoint that the organic EL material can be heated efficiently.
  • the three-dimensional metal net 7b is made of a metal alloy material having high thermal conductivity, for example, a titanium alloy, similar to the crucible 7.
  • the number of the three-dimensional metal nets 7b installed is not limited to one, and may be a plurality.
  • a plurality of three-dimensional metal nets 7b are arranged in the vertical direction (height direction) in the vertical sectional view of FIG. 4B. It may be installed side by side.
  • a plurality of three-dimensional metal nets 7b are arranged in the horizontal direction in the vertical sectional view of FIG. 4 (b). It may be installed.
  • the size of the three-dimensional metal net 7b varies depending on the internal size of the crucible 7.
  • the crucible 7 has two types (host and dopant).
  • the length inside the crucible 7 (the length in the horizontal direction in FIG. 4B) is about 2000 mm to 3000 mm, and the height (FIG. 4). (Vertical length in (b)) is 300 mm to 500 mm.
  • the size of the inside of the crucible 7 is different, and the size of the inside of the crucible for the host material (the lateral length in (a) of FIG. 4) is about 80 mm to 200 mm, and the size of the inside of the crucible for the dopant material. Is 20-40 mm.
  • the organic EL material is three-dimensionally heated in a cubic lattice shape, which is different from the configuration of the first embodiment.
  • the three-dimensional metal net 7b is made of, for example, a heat generating material. Further, the three-dimensional metal net 7b is provided so as to be movable in the crucible 7.
  • the thin-film deposition apparatus 5 may be provided with a liquid level sensor and a control unit for controlling the movement of the three-dimensional metal net 7b below the liquid level of the vapor-deposited material.
  • the liquid level sensor is not particularly limited as long as it is a sensor such as a resistor that can handle the temperature inside the crucible 7. By providing such a liquid level sensor, it is possible to prevent the heat generating material from coming out above the liquid level.
  • FIGS. 4A to 4C are a cross-sectional view, a vertical cross-sectional view, and a top view of the case where the organic EL material is heated in the crucible 7, respectively.
  • FIG. 4D is an explanatory view showing an overall view of the three-dimensional metal net 7b in FIGS. 4A to 4C.
  • the solid line arrow means the heating of the organic EL material
  • the broken line arrow means the sublimation or evaporation of the organic EL material
  • the organic EL material has low thermal conductivity, but (1) the vicinity of the wall surface of the vapor deposition source 1 is heated, and (2) the above. The three-dimensional metal net 7b will be heated.
  • the organic EL material is significantly heated by the amount of heating in (2) above, as compared with the cases (a) to (c) in FIG.
  • the area of the organic EL material that receives heat is further significantly increased by the amount of heating in (2).
  • the organic EL material is heated not only in the vicinity of the wall surface of the vapor deposition source 1 but also in the central region. It will be sublimated. As a result, the organic EL material receives heat and is vapor-deposited in far more regions than in the cases (a) to (c) of FIG. Further, the crucible 7 shown in FIGS. 3 (a) to 3 (c) surely solves the problem that the organic EL material suddenly collapses, and as a result, the film formation rate of the vapor-deposited film greatly fluctuates. can do.
  • the organic EL material decreases with the vapor deposition time, but since the three-dimensional metal net 7b is provided so as to be movable in the crucible 7, the three-dimensional metal net 7b is provided according to the remaining amount of the organic EL material.
  • the position of 7b will be adjusted automatically. That is, the position of the three-dimensional metal net 7b in the crucible 7 is automatically lowered as the amount of the organic EL material decreases.
  • the thermal conductivity, heating efficiency, heating uniformity, etc. for the organic EL material can all be further improved, and the stability of the vapor deposition rate can be further improved.
  • the cleaning ability of the crucible 7 and the three-dimensional metal net 7b can be increased, and the vapor deposition accuracy can be improved. It becomes possible.
  • the thin-film deposition apparatus is a thin-film deposition apparatus provided with a crucible that accommodates the vapor-deposited material and discharges the vapor-deposited material. It is characterized by that.
  • the vapor deposition apparatus is characterized in that, in addition to the configuration of the first aspect, the metal mesh-like structure is composed of a heat generating material.
  • the vapor deposition apparatus is characterized in that, in addition to the configuration of the first aspect or the second aspect, the metal mesh-like structure is provided so as to be movable in the crucible.
  • the thin-film deposition apparatus includes a liquid level sensor, and a control unit that controls the movement of the metal mesh-like structure below the liquid level of the vapor-deposited material. It is characterized by being further provided.
  • the vapor deposition apparatus according to claim 1 or 2 wherein the thin-film deposition apparatus according to the fifth aspect is the configuration of the first or second aspect, and the network-like structure is at least one planar metal network. It is characterized by being.
  • the vapor deposition apparatus according to claim 1 or 2 wherein the thin-film deposition apparatus according to the sixth aspect is the configuration of the first or second aspect, and the network structure is at least one three-dimensional metal network. It is characterized by being.
  • the thin-film deposition apparatus is characterized in that the flat metal net is provided so that at least a part of the end portion thereof contacts the inner wall of the crucible. ..
  • the thin-film deposition apparatus is characterized in that the three-dimensional metal net is provided so that at least a part of the end portion thereof contacts the inner wall of the crucible. ..
  • the at least one planar metal net is composed of a plurality of planar metal nets, and the plurality of planar metal nets are the height of the crucible. It is characterized in that it is provided so as to be parallel to the vertical direction or the direction perpendicular to the height direction of the crucible.
  • the at least one three-dimensional metal net is composed of a plurality of three-dimensional metal nets, and the plurality of three-dimensional metal nets are the height of the crucible. It is characterized in that it is provided so as to be parallel to the vertical direction or the direction perpendicular to the height direction of the crucible.
  • the planar metal mesh is provided so that the mesh spacing on the upper surface side is narrower than the mesh spacing on the bottom surface side in the depth direction of the crucible. It is characterized by being.
  • the planar metal net has a mesh spacing near the center of the crucible narrower than the mesh spacing on the end side of the crucible. It is characterized by being provided.
  • the vapor deposition apparatus is characterized in that, in addition to the configuration of the eighth aspect, the three-dimensional metal net is provided so as to have a mesh having a uniform structure.
  • the flat metal net is provided so as to be movable in the crucible, and the flat metal net depends on the remaining amount of the vapor deposition material. Therefore, it is characterized by moving in the above-mentioned crucible.
  • the three-dimensional metal net is provided so as to be movable in the crucible, and the three-dimensional metal net depends on the remaining amount of the vapor deposition material. Therefore, it is characterized by moving in the above-mentioned crucible.
  • the display element includes a display element whose brightness and transmittance are controlled by an electric current and a display element whose brightness and transmittance are controlled by a voltage.
  • the current control display element include an EL display device such as an organic EL (Electro Luminescence) display device equipped with an OLED (Organic Light Emitting Diode) or an inorganic EL display device equipped with an inorganic light emitting diode.
  • an EL display device such as an organic EL (Electro Luminescence) display device equipped with an OLED (Organic Light Emitting Diode) or an inorganic EL display device equipped with an inorganic light emitting diode.
  • OLED Organic Light Emitting Diode
  • an inorganic EL display device equipped with an inorganic light emitting diode.
  • QLED display device or the like equipped with a QLED (Quantum dot Light Emitting Diode).
  • the voltage control display element there is a liquid crystal display element or the like. Furthermore, it can be applied not only to glass OLEDs but also to flexible OLEDs.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Un dispositif de dépôt en phase vapeur (5) est équipé d'un creuset (7) dans lequel est placé un matériau de dépôt en phase vapeur et le matériau de dépôt en phase vapeur est sublimé ou évaporé pour libérer le matériau de dépôt en phase vapeur, le creuset (7) étant pourvu d'une structure de type filet métallique (7a) qui partitionne l'intérieur du creuset (7).
PCT/JP2019/013462 2019-03-27 2019-03-27 Dispositif de dépôt en phase vapeur WO2020194631A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/013462 WO2020194631A1 (fr) 2019-03-27 2019-03-27 Dispositif de dépôt en phase vapeur

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Application Number Priority Date Filing Date Title
PCT/JP2019/013462 WO2020194631A1 (fr) 2019-03-27 2019-03-27 Dispositif de dépôt en phase vapeur

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WO2020194631A1 true WO2020194631A1 (fr) 2020-10-01

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4880960A (en) * 1987-03-06 1989-11-14 Centre National D'etudes Spatiales Continuous vacuum evaporation device for metal
JP2009235479A (ja) * 2008-03-27 2009-10-15 Seiko Epson Corp 蒸着装置
US20180142341A1 (en) * 2015-05-15 2018-05-24 Boe Technology Group Co., Ltd. Vapor-deposition crucible

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4880960A (en) * 1987-03-06 1989-11-14 Centre National D'etudes Spatiales Continuous vacuum evaporation device for metal
JP2009235479A (ja) * 2008-03-27 2009-10-15 Seiko Epson Corp 蒸着装置
US20180142341A1 (en) * 2015-05-15 2018-05-24 Boe Technology Group Co., Ltd. Vapor-deposition crucible

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