WO2020192528A1 - 阵列基板的制作方法、阵列基板和显示装置 - Google Patents

阵列基板的制作方法、阵列基板和显示装置 Download PDF

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Publication number
WO2020192528A1
WO2020192528A1 PCT/CN2020/080008 CN2020080008W WO2020192528A1 WO 2020192528 A1 WO2020192528 A1 WO 2020192528A1 CN 2020080008 W CN2020080008 W CN 2020080008W WO 2020192528 A1 WO2020192528 A1 WO 2020192528A1
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Prior art keywords
roughened
opposite sides
edge regions
area
roughened area
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PCT/CN2020/080008
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English (en)
French (fr)
Inventor
齐永莲
刘超
曲连杰
赵合彬
张珊
贾宁
石广东
刘帅
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Priority to US17/040,510 priority Critical patent/US11482545B2/en
Publication of WO2020192528A1 publication Critical patent/WO2020192528A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a manufacturing method of an array substrate, an array substrate and a display device.
  • Micro-LED display panel has the advantages of ultra-high pixel count, ultra-high resolution, low energy consumption and long life. Compared with organic light-emitting diode (OLED), it can compare the difference between pixels. The distance is reduced to um to further optimize the display effect, so Micro-LED display devices are becoming more and more popular in the market.
  • OLED organic light-emitting diode
  • the present disclosure provides a manufacturing method of an array substrate, an array substrate and a display device.
  • an embodiment of the present disclosure provides a manufacturing method of an array substrate, including:
  • the edge regions of the two opposite sides and the side surfaces connecting the two opposite sides are roughened to form a roughened region
  • a metal wiring connecting the signal input terminal of the display unit and the signal output terminal of the driving circuit is formed in the roughened area.
  • the step of forming a metal wiring connecting the signal input terminal of the display unit and the signal output terminal of the driving circuit in the roughened area includes:
  • an electroplating layer is formed on the transition pattern by an electroplating process.
  • the electroplating layer and the transition pattern together form a signal input terminal connected to the display unit and a signal output terminal of the driving circuit.
  • Metal wiring is used as an electroplating seed layer.
  • the step of oxidizing the roughened area and forming an oxide layer on the roughened area includes:
  • the roughened area is immersed in an oxidizing solution to form an oxide layer on the roughened area.
  • the oxidizing solution is potassium permanganate solution.
  • the method further includes:
  • edge regions of the two opposite sides and the side surfaces connecting the edge regions of the two opposite sides are cleaned to remove the portions that have not been oxidized.
  • the metal ion is silver ion or copper ion.
  • the electroplating layer outside the predetermined metal wiring area is etched away by a laser etching process to form metal wiring.
  • the overall electroplating on the roughened area is copper plating.
  • the step of performing roughening treatment on the edge regions of the two opposite surfaces and the side surfaces connecting the edge regions of the two opposite surfaces to form a roughened region includes:
  • the step of performing roughening treatment on the edge regions of the two opposite sides and the side surfaces of the edge regions connecting the two opposite sides to form a roughened region includes:
  • the roughened regions There are a plurality of the roughened regions and are spaced apart from each other, and the plurality of roughened regions correspond one-to-one with the metal traces, and the metal traces are formed in the roughened regions.
  • embodiments of the present disclosure also provide an array substrate manufactured by the above method, including:
  • a base substrate one of the two opposite sides of the base substrate is formed with a display unit and the other side is formed with a driving circuit, and the edge regions of the two opposite sides and the side surfaces connecting the edge regions of the two opposite sides include roughened regions;
  • the metal trace is formed in the roughened area and is used to connect the signal input terminal of the display unit and the signal output terminal of the driving circuit.
  • the plurality of the roughened regions there are a plurality of the roughened regions and are spaced apart from each other, and the plurality of roughened regions correspond to the metal traces in a one-to-one correspondence.
  • the display units are arranged in an array on the upper surface of the base substrate, and the display units include a thin film transistor array layer and a Micro LED, and the thin film transistor array layer is located between the Micro LED and the base substrate.
  • a peelable protective film is covered on the display unit and/or the driving circuit.
  • an oxide layer formed by oxidation is provided on the roughened area, and an electroplating seed layer formed by metal ion deposition is provided on the roughened area, wherein the metal wiring is formed on the Plating on the seed layer.
  • embodiments of the present disclosure also provide a display device, which includes the array substrate as described above.
  • FIG. 1 is a flowchart of a manufacturing method of an array substrate provided by an embodiment of the disclosure
  • FIG. 2 is a schematic diagram of the structure of the array substrate in the manufacturing method of the array substrate provided by an embodiment of the disclosure
  • FIG. 3 is a schematic structural diagram of an array substrate provided by an embodiment of the disclosure.
  • FIG. 4 is a side view of an array substrate according to an embodiment of the disclosure.
  • FIG. 5 is a cross-sectional view of the roughened area at the position of the AA cross-section in FIG. 3.
  • Micro LED is a new generation of display technology, which has higher brightness, better luminous efficiency, and lower power consumption than related Organic Light-Emitting Diode (OLED) technology. Therefore, Micro LED display devices are becoming more and more popular.
  • OLED Organic Light-Emitting Diode
  • Micro LED display devices are becoming more and more popular.
  • the electrical connection between the front and the back of the small and medium-sized Micro-LED display panel in the related art is prone to dislocation and disconnection, resulting in poor display effect.
  • the embodiments of the present disclosure provide a manufacturing method of an array substrate, an array substrate, and a display device, which can avoid dislocation or disconnection of electrical connections between the front and back of a small-size Micro-LED display panel, and ensure display
  • the unit can receive the drive signal normally to ensure the display effect of the display device.
  • the embodiment of the present disclosure provides a manufacturing method of an array substrate, as shown in FIG. 1, including:
  • Step 101 After the display unit is formed on one of the two opposite sides of the base substrate and the driving circuit is formed on the other side, the edge regions of the two opposite sides and the side surfaces connecting the edge regions of the two opposite sides are roughened to form a rough surface.
  • Step 102 forming a metal wire connecting the signal input terminal of the display unit and the signal output terminal of the driving circuit in the roughened area.
  • a roughened area is formed, and the surface of the roughened area can be more easily adsorbed and positively charged.
  • the charged metal ions can avoid dislocation when forming metal traces; in addition, the surface of the roughened area is microscopically rough, which can increase the contact area with the coating, improve the adhesion with the coating, and prevent the metal traces from breaking. Therefore, it is ensured that the display unit can receive the driving signal normally, and the display effect of the display device is ensured. Therefore, the technical solution provided by the present disclosure can ensure the display effect of the display device.
  • the base substrate may be a flexible base substrate, such as a polyimide film; the base substrate may also be a rigid base substrate, such as a quartz substrate or a glass substrate.
  • the solid line frame arranged in an array on the upper surface of the base substrate in Figure 2 is the above display unit, which includes a thin film transistor array layer and a Micro LED.
  • the thin film transistor array layer is located between the Micro LED and the base substrate.
  • the drain of the transistor is connected to the Micro LED, and the gate and source are used to connect to the drive circuit.
  • the dashed frame on the lower surface of the base substrate in FIG. 2 is the above-mentioned driving circuit, which is used to connect with each thin film transistor in the thin film transistor array layer to drive the corresponding Micro LED to emit light, so that the display device can emit light normally.
  • the area where the filling pattern in FIG. 2 is located is the edge area of the two opposite sides and the side surface connecting the edge areas of the two opposite sides, that is, the area where the roughening process is performed. While roughening the entire edge area and the side surface, a roughening area is formed on the edge area and the side surface (the part where the filling pattern is denser in FIG. 2) through further roughening treatment.
  • Metal traces are formed on the roughened area.
  • a peelable protective film may be covered on the display unit and/or the driving circuit to protect from external damage.
  • the roughened area is the graphic area corresponding to the connection between the driving circuit and the display unit.
  • the negatively charged surface of the roughened area can more easily adsorb positively charged metal ions, avoiding the occurrence of metal traces. Dislocation;
  • the surface of the roughened area is microscopically rough, which can increase the contact area with the plating layer, improve the adhesion between the plating layer, and avoid the disconnection of the metal wiring, so as to ensure that the display unit can receive the driving signal normally. The display effect of the display device.
  • the step of forming a metal wire connecting the signal input terminal of the display unit and the signal output terminal of the driving circuit in the roughened area includes:
  • an electroplating layer is formed on the transition pattern by an electroplating process, and the electroplating layer and the transition pattern together form a signal input terminal connecting the display unit and the signal output of the driving circuit The metal trace at the end.
  • a transition pattern is formed on the roughened area by chemical deposition, and the transition pattern is used as an electroplating seed layer, combined with an electroplating process to form an electroplated layer to produce metal traces located in the roughened area.
  • the above-mentioned method of oxidizing the roughened area can be to oxidize the roughened area with an oxidant to form an oxide layer on the roughened area; or soak the roughened area in an oxidizing solution to make the oxidizing solution and the roughening
  • the substances in the area react to form an oxide layer on the roughened area, where the above-mentioned oxidizing solution may be potassium permanganate solution, potassium dichromate, or the like.
  • This embodiment does not limit the specific method used to oxidize the roughened area.
  • the oxide layer formed above can react in a solution containing metal ions, so that the metal ions in the solution are deposited on the roughened area. After a period of time, a thinner metal film, that is, a transition pattern, can be formed on the roughened area.
  • the transition pattern can realize the conduction between the display unit and the driving circuit, but due to its thin thickness, not only is it prone to disconnection, but also makes the resistance between the display unit and the driving circuit larger, and the driving circuit cannot normally control the display unit Glowing. Therefore, an electroplating process is required to increase the metal thickness of the roughened area.
  • the electroplating process is a method of laying a layer of metal on the electroplating seed layer using the principle of electrolysis. During the electroplating process, metal ions are deposited on the electroplating seed layer, thereby increasing the thickness of the metal on the roughened area, which not only avoids disconnection between the display unit and the driving circuit, but also reduces the resistance between the display unit and the driving circuit, so that the driving circuit The light emission of the display unit can be controlled normally.
  • the above-mentioned metal ion may be copper ion or silver ion.
  • the metal ion is copper ion
  • the transition pattern and the electroplating layer are both obtained by copper ion deposition
  • the metal ion is silver ion
  • the transition pattern and the electroplating layer are both obtained by silver ion deposition.
  • the overall electroplating on the roughened area may be copper plating.
  • the method further includes:
  • edge regions of the two opposite sides and the side surfaces connecting the edge regions of the two opposite sides are cleaned to remove the portions that have not been oxidized.
  • ionized water or low-concentration acid may be used to clean the edge regions of the two opposite sides and the side surfaces connecting the edge regions of the two opposite sides.
  • the oxide layer After the oxide layer is formed, not only the oxidizing agent or oxidizing solution remains in the edge regions of the two opposite sides and the side surfaces connecting the edge regions of the two opposite sides, but also the unoxidized parts.
  • the oxidizing agent or oxidizing solution By cleaning the above-mentioned substances, it is possible to prevent these substances from affecting the deposition of metal ions in the subsequent oxide layer in the solution containing metal ions, and to ensure that the metal ions can be smoothly deposited in the roughened area to form a transition pattern.
  • the step of performing roughening treatment on the edge regions of the two opposite surfaces and the side surfaces connecting the edge regions of the two opposite surfaces to form a roughened region includes:
  • the edge regions of the two opposite surfaces and the side surfaces connecting the edge regions of the two opposite surfaces are roughened by laser irradiation to form a roughened area.
  • the laser used can be an ultraviolet (UV) laser or an excimer laser.
  • the edge area of the opposite sides and the side surface of the edge area connecting the two opposite sides are irradiated as a whole by laser to make it rough, and then the illumination parameters are adjusted to illuminate according to the wiring pattern designed for the display unit and the driving circuit in advance. , Forming a roughened area.
  • the plurality of the roughened regions there are a plurality of the roughened regions and are spaced apart from each other, and the plurality of roughened regions correspond to the metal traces in a one-to-one correspondence, and the metal traces are formed in the roughened regions.
  • the embodiment of the present disclosure also provides an array substrate, as shown in FIG. 3, including:
  • a base substrate 310 One of the two opposite sides of the base substrate 310 is formed with the display unit 320 and the other side is formed with the driving circuit 330.
  • the edge regions of the two opposite sides and the side surfaces connecting the edge regions of the two opposite sides include Coarsening area
  • the metal trace 340 is formed in the roughened area and is used to connect the signal input terminal of the display unit 320 and the signal output terminal of the driving circuit 330.
  • FIG. 4 is a side view of an array substrate according to an embodiment of the disclosure.
  • the display unit 320 is arranged in an array on the upper surface of the base substrate 310.
  • the display unit 320 includes a thin film transistor array layer 350 and a Micro LED 360.
  • the thin film transistor 350 array layer is located between the Micro LED 360 and the base substrate 310.
  • the drain of the thin film transistor in the thin film transistor array layer 350 is connected to the Micro LED, and the gate and source are used to connect to the driving circuit 330.
  • a peelable protective film 370 is covered on the display unit 320 and/or the driving circuit 330.
  • FIG. 5 is a cross-sectional view of the roughened area at the position of the AA cross-section line in FIG. 3.
  • An oxide layer 380 formed by oxidation is provided on the roughened area
  • an electroplating seed layer 390 formed by metal ion deposition is provided on the roughened area, wherein the metal traces 340 are formed on the The seed layer 390 is electroplated.
  • the above-mentioned array substrate is manufactured by the above-mentioned manufacturing method of the array substrate, so there is no need to perform chamfering and edging process, and it can also avoid the dislocation or disconnection of the metal wiring 340 at right angles, and ensure that the display unit 320 can receive the driving signal normally. Ensure the display effect of the display device.
  • the embodiment of the present disclosure also provides a display device, including the array substrate as described above.
  • the display device can be a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.
  • the technical solution provided by the present disclosure by roughening the edge regions of the opposite sides and the side surfaces connecting the edge regions of the opposite sides, a roughened region is formed, and the surface of the roughened region can be more easily adsorbed with negative charges.
  • the positively charged metal ions can avoid dislocation when forming metal traces; in addition, the surface of the roughened area is microscopically rough, which can increase the contact area with the coating, improve the adhesion between the coating and avoid metal traces The disconnection occurs, thereby ensuring that the display unit can receive the driving signal normally and ensuring the display effect of the display device. Therefore, the technical solution provided by the present disclosure can ensure the display effect of the display device.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

一种阵列基板的制作方法、阵列基板和显示装置，其中，阵列基板的制作方法，包括：步骤101：在衬底基板（310）相对两面中的一面形成显示单元（320）且另一面形成驱动电路（330）后，对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域（S101）；步骤102：在所述粗化区域形成连接所述显示单元（320）的信号输入端和所述驱动电路（330）信号输出端的金属走线（340）（S102）。

Description

阵列基板的制作方法、阵列基板和显示装置
相关申请的交叉引用
本申请主张在2019年3月28日在中国提交的中国专利申请No.201910243617.9的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种阵列基板的制作方法、阵列基板和显示装置。
背景技术
微型发光二极管Micro-LED显示面板具有超高像素数、超高解析度、能耗低和寿命长等优点，与有机发光二极管(Organic Light-Emitting Diode，OLED)相比，能够将像素之间的距离降到um，进一步优化显示效果，因而Micro-LED显示装置也越来越受到市场的欢迎。
在相关技术中，为了实现Micro-LED显示装置大尺寸的显示，需要将多个小尺寸的Micro-LED显示面板拼接在一起，其中，每个Micro-LED显示面板的正面和背面需要实现电连接。相关技术中，实现Micro-LED显示面板的正面和背面电连接的方式容易出现错位和断线，导致显示效果不佳。
发明内容
本公开提供一种阵列基板的制作方法、阵列基板和显示装置。
第一方面，本公开实施例提供一种阵列基板的制作方法，包括：
在衬底基板相对两面中的一面形成显示单元且另一面形成驱动电路后，对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域；
在所述粗化区域形成连接所述显示单元的信号输入端和所述驱动电路信号输出端的金属走线。
进一步地，所述在所述粗化区域形成连接所述显示单元的信号输入端和 所述驱动电路信号输出端的金属走线的步骤，包括：
对所述粗化区域进行氧化，在所述粗化区域上形成氧化层；
将所述氧化层浸泡在含有金属离子的溶剂中，使得所述金属离子在所述粗化区域上沉积，形成过渡图形；
以所述过渡图形作为电镀种子层，在所述过渡图形上利用电镀工艺形成电镀层，所述电镀层和所述过渡图形共同组成连接所述显示单元的信号输入端和是驱动电路信号输出端的金属走线。
进一步地，所述对所述粗化区域进行氧化，在所述粗化区域上形成氧化层的步骤，包括：
将所述粗化区域浸泡在氧化溶液中，在所述粗化区域上形成氧化层。
进一步地，所述氧化溶液为高锰酸钾溶液。
进一步地，在所述粗化区域上形成氧化层的步骤之后且所述将所述氧化层浸泡在含有金属离子的溶剂中的步骤之前，还包括：
清洗所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面，以去除其中未发生氧化的部分。
进一步地，所述金属离子为银离子或铜离子。
进一步地，对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面整体进行粗糙化处理，形成粗化区域；
在所述粗化区域上进行整体的电镀，形成电镀层；
在粗化区域上确定预设的金属走线区域；
通过激光刻蚀工艺将所述预设的金属走线区域之外的电镀层刻蚀掉，形成金属走线。
进一步地，所述在所述粗化区域上进行整体的电镀为镀铜。
进一步地，所述对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域的步骤，包括：
利用激光对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行照射，提高所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面的粗糙程度，并形成粗化区域。
进一步地，所述对所述相对两面的边缘区域、以及连接所述相对两面的 边缘区域的侧面进行粗糙化处理，形成粗化区域的步骤，包括：
所述粗化区域为多个，且彼此间隔开，所述多个粗化区域与所述金属走线一一对应，所述金属走线形成在所述粗化区域内。
第二方面，本公开实施例还提供一种阵列基板，通过上述方法制造，包括：
衬底基板，所述衬底基板相对两面中的一面形成有显示单元且另一面形成有驱动电路，所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面包括粗化区域；
金属走线，所述金属走线形成在所述粗化区域，用于连接所述显示单元的信号输入端和所述驱动电路信号输出端。
进一步地，所述粗化区域为多个，且彼此间隔开，所述多个粗化区域与所述金属走线一一对应。
进一步地，所述衬底基板的上表面阵列排布所述显示单元，所述显示单元包括薄膜晶体管阵列层和Micro LED，所述薄膜晶体管阵列层位于Micro LED与衬底基板之间。
进一步地，在所述显示单元和/或驱动电路上覆盖可剥离的保护膜。
进一步地，在所述粗化区域上设置有由氧化形成的氧化层，在所述粗化区域上设置有由金属离子沉积形成的电镀种子层，其中所述金属走线通过电镀形成在所述电镀种子层上。
第三方面，本公开实施例还提供一种显示装置，其中，包括如上所述的阵列基板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对本公开实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本公开一实施例提供的阵列基板的制作方法的流程图；
图2为本公开一实施例提供的阵列基板的制作方法中阵列基板的结构示 意图；
图3为本公开一实施例提供的阵列基板的结构示意图；
图4为本公开一实施例的阵列基板的侧视图；
图5为图3中AA横截线位置上粗化区域的截面图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
Micro LED是新一代显示技术，比相关的有机发光二极管(Organic Light-Emitting Diode，OLED)技术亮度更高、发光效率更好、功耗更低，因此Micro LED显示装置也越来越得到普及。有时为了实现Micro-LED显示装置大尺寸的显示，需要将多个小尺寸的Micro-LED显示面板拼接在一起，其中，每个Micro-LED显示面板的正面和背面需要实现电连接。然而，相关技术中小尺寸Micro-LED显示面板的正面和背面电连接的方式容易出现错位和断线，导致显示效果不佳。
本公开的实施例针对上述问题，提供一种阵列基板的制作方法、阵列基板和显示装置，能够避免小尺寸Micro-LED显示面板的正面和背面之间的电连接出现错位或断线，保证显示单元能够正常接收驱动信号，确保显示装置的显示效果。
本公开实施例提供一种阵列基板的制作方法，如图1所示，包括：
步骤101：在衬底基板相对两面中的一面形成显示单元且另一面形成驱动电路后，对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域；
步骤102：在所述粗化区域形成连接所述显示单元的信号输入端和所述驱动电路的信号输出端的金属走线。
本公开实施例中，通过对相对两面的边缘区域、以及连接所述相对两面的边缘区的侧面进行粗糙化处理，形成粗化区域，粗化区域的表面带负电荷 能够更容易的吸附带正电荷的金属离子，避免在形成金属走线时发生错位；另外，粗化区域的表面呈微观粗糙能够增加与镀层的接触面积，能够提高与镀层之间的粘附力，避免金属走线出现断线，从而保证显示单元能够正常接收驱动信号，确保显示装置的显示效果。因此，本公开提供的技术方案能够确保显示装置的显示效果。
上述衬底基板可以是柔性衬底基板，比如聚酰亚胺薄膜；上述衬底基板也可以是刚性衬底基板，比如石英基板或玻璃基板。
图2中衬底基板的上表面阵列排布的实线框为上述显示单元，包括薄膜晶体管阵列层和Micro LED，薄膜晶体管阵列层位于Micro LED与衬底基板之间，薄膜晶体管阵列层中薄膜晶体管的漏极与Micro LED连接，栅极和源极用于与驱动电路连接。
图2中衬底基板的下表面的虚线框为上述驱动电路，驱动电路用于与薄膜晶体管阵列层中的各薄膜晶体管连接，以驱动相应的Micro LED发光，使得显示装置能够正常发光。
图2中填充图案所在区域即为所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面，也就是进行粗糙化处理的区域。在对所述边缘区域以及侧面整体进行粗糙化的同时，还通过进一步粗糙化处理，在所述边缘区域以及侧面形成粗化区域(图2中填充图案较密集的部分)。
在所述粗化区域上形成金属走线，在形成金属走线的过程中，可以在显示单元和/或驱动电路上覆盖可剥离的保护膜，以保护不受到外界的破坏。
粗化区域为对应驱动电路与显示单元连接的图形区域，通过预先形成粗化区域，粗化区域的表面带负电荷能够更容易的吸附带正电荷的金属离子，避免在形成金属走线时发生错位；另外，粗化区域的表面呈微观粗糙能够增加与镀层的接触面积，能够提高与镀层之间的粘附力，避免金属走线出现断线，从而保证显示单元能够正常接收驱动信号，确保显示装置的显示效果。
进一步地，所述在所述粗化区域形成连接所述显示单元的信号输入端和所述驱动电路信号输出端的金属走线的步骤，包括：
对所述粗化区域进行氧化，在所述粗化区域上形成氧化层；
将所述氧化层浸泡在含有金属离子的溶剂中，使得所述金属离子在所述 粗化区域上沉积，形成过渡图形；
以所述过渡图形作为电镀种子层，在所述过渡图形上利用电镀工艺形成电镀层，所述电镀层和所述过渡图形共同组成连接所述显示单元的信号输入端和所述驱动电路信号输出端的金属走线。
本实施例中，通过化学沉积的方式在粗化区域上形成过渡图形，并以过渡图形为电镀种子层，结合电镀工艺形成电镀层的方式制作得到位于粗化区域的金属走线。
上述对粗化区域进行氧化的方式可以是利用氧化剂对粗化区域氧化，以在粗化区域上形成氧化层；也可以是将所述粗化区域浸泡在氧化溶液中，使得氧化溶液与粗化区域的物质发生反应，从而在粗化区域上形成氧化层，其中，上述氧化溶液可以为高锰酸钾溶液、重铬酸钾等等。本实施例对于具体采用何种方式对粗化区域进行氧化不作限定。
上述形成的氧化层在含有金属离子的溶液中能够发生反应，使得溶液中的金属离子在粗化区域上沉积，一段时间后粗化区域上能够形成一层较薄的金属薄膜，即过渡图形。该过渡图形能够实现显示单元与驱动电路之间的导通，但是由于厚度较薄，不仅容易发生断线而且还使得显示单元与驱动电路之间的电阻值较大，驱动电路无法正常控制显示单元的发光。因此，需要电镀工艺增加粗化区域的金属厚度。
电镀工艺是利用电解的原理在电镀种子层铺上一层金属的方法。电镀过程中金属离子在电镀种子层上沉积，从而增加粗化区域上金属的厚度，不仅避免显示单元与驱动电路之间断线，还能够降低显示单元与驱动电路之间的电阻值，使得驱动电路能够正常控制显示单元的发光。
上述金属离子可以为铜离子，也可以为银离子。在金属离子为铜离子时，上述过渡图形和电镀层均由铜离子沉积得到；在金属离子为银离子时，上述过渡图形和电镀层均由银离子沉积得到。
可选地，在其他实施例中，还可以是对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面整体进行粗糙化处理，形成粗化区域，然后在所述粗化区域上进行整体的电镀，形成电镀层，然后在粗化区域上确定预设的金属走线的位置和区域，之后再通过激光刻蚀工艺将预设的金属走 线区域之外的电镀层刻蚀掉，最终形成位于粗化区域的金属走线。
进一步地，所述在所述粗化区域上进行整体的电镀可以为镀铜。
可选地，在所述粗化区域上形成氧化层的步骤之后且所述将所述氧化层浸泡在含有金属离子的溶剂中的步骤之前，还包括：
清洗所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面，以去除其中未发生氧化的部分。
具体地，上述清洗步骤可以采用离子水或者低浓度的酸对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行清洗。
在形成氧化层之后，所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面不仅残存有氧化剂或氧化溶液，还包括未发生氧化的部分。本实施例中，通过清洗掉上述物质，能够避免这些物质影响后续氧化层在含有金属离子的溶液中金属离子的沉积，确保金属离子能够顺利沉积在粗化区域内形成过渡图形。
进一步地，所述对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域的步骤，包括：
利用激光对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行照射，提高所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面的粗糙程度，并形成粗化区域。
本实施例中，通过激光照射的方式对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理和形成粗化区域。采用的激光可以是紫外(UV)激光，也可以是准分子激光。
通过激光对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行整体照射，使其粗糙化，之后调整光照参数按预先针对显示单元和驱动电路设计的走线图形进行照射，形成粗化区域。
可选地，所述粗化区域为多个，且彼此间隔开，所述多个粗化区域与所述金属走线一一对应，所述金属走线形成在所述粗化区域内。
在本公开的其他实施例中，可以采用其他方式对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理和形成粗化区域。
本公开实施例还提供一种阵列基板，如图3所示，包括：
衬底基板310，所述衬底基板310相对两面中的一面形成有显示单元320且另一面形成有驱动电路330，所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面包括粗化区域；
金属走线340，所述金属走线340形成在所述粗化区域，用于连接所述显示单元320的信号输入端和所述驱动电路330信号输出端。可选地，所述粗化区域为多个，且彼此间隔开，所述多个粗化区域与所述金属走线一一对应。
可选地，如图4所示，图4为本公开一实施例的阵列基板的侧视图。所述衬底基板310的上表面阵列排布所述显示单元320，所述显示单元320包括薄膜晶体管阵列层350和Micro LED360，所述薄膜晶体管350阵列层位于Micro LED360与衬底基板310之间，薄膜晶体管阵列层350中薄膜晶体管的漏极与Micro LED连接，栅极和源极用于与驱动电路330连接。
可选地，在所述显示单元320和/或驱动电路330上覆盖可剥离的保护膜370。
可选地，如图5所示，图5为图3中AA横截线位置上粗化区域的截面图。在所述粗化区域上设置有由氧化形成的氧化层380，在所述粗化区域上设置有由金属离子沉积形成的电镀种子层390，其中所述金属走线340通过电镀形成在所述电镀种子层390上。
相关技术中，需要先对衬底基板相对两面的边缘区域、以及连接该相对两面的边缘区域的侧面之间的垂直角进行倒角磨边，即将垂直的棱边磨成一个较为平缓的角度，这样才可使侧边的金属线连接显示单元和驱动电路，否则移动印刷无法在直角处进行金属的印刷和对位。
上述阵列基板通过上述阵列基板的制作方法制作得到，因此无需进行倒角磨边工序，在直角处也能够避免金属走线340出现错位或断线的现象，保证显示单元320能够正常接收驱动信号，确保显示装置的显示效果。
本公开实施例还提供一种显示装置，包括如上所述的阵列基板。
显示装置可以是显示器、手机、平板电脑、电视机、可穿戴电子设备、导航显示设备等。
本公开提供的技术方案中，通过对相对两面的边缘区域、以及连接所述相对两面的边缘区的侧面进行粗糙化处理，形成粗化区域，粗化区域的表面带负电荷能够更容易的吸附带正电荷的金属离子，避免在形成金属走线时发生错位；另外，粗化区域的表面呈微观粗糙能够增加与镀层的接触面积，能够提高与镀层之间的粘附力，避免金属走线出现断线，从而保证显示单元能够正常接收驱动信号，确保显示装置的显示效果。因此，本公开提供的技术方案能够确保显示装置的显示效果。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
上面结合附图对本公开的实施例进行了描述，但是本公开并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本公开的启示下，在不脱离本公开宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本公开的保护之内。

Claims (16)

  1. 一种阵列基板的制作方法，包括：
    在衬底基板相对两面中的一面形成显示单元且另一面形成驱动电路后，对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域；
    在所述粗化区域形成连接所述显示单元的信号输入端和所述驱动电路信号输出端的金属走线。
  2. 根据权利要求1所述的方法，其中，所述在所述粗化区域形成连接所述显示单元的信号输入端和所述驱动电路信号输出端的金属走线的步骤，包括：
    对所述粗化区域进行氧化，在所述粗化区域上形成氧化层；
    将所述氧化层浸泡在含有金属离子的溶剂中，使得所述金属离子在所述粗化区域上沉积，形成过渡图形；
    以所述过渡图形作为电镀种子层，在所述过渡图形上利用电镀工艺形成电镀层，所述电镀层和所述过渡图形共同组成连接所述显示单元的信号输入端和是驱动电路信号输出端的金属走线。
  3. 根据权利要求2所述的方法，其中，所述对所述粗化区域进行氧化，在所述粗化区域上形成氧化层的步骤，包括：
    将所述粗化区域浸泡在氧化溶液中，在所述粗化区域上形成氧化层。
  4. 根据权利要求3所述的方法，其中，所述氧化溶液为高锰酸钾溶液。
  5. 根据权利要求3所述的方法，其中，在所述粗化区域上形成氧化层的步骤之后且所述将所述氧化层浸泡在含有金属离子的溶剂中的步骤之前，还包括：
    清洗所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面，以去除其中未发生氧化的部分。
  6. 根据权利要求2所述的方法，其中，所述金属离子为银离子或铜离子。
  7. 根据权利要求1所述的方法，其中，
    对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面 整体进行粗糙化处理，形成粗化区域；
    在所述粗化区域上进行整体的电镀，形成电镀层；
    在粗化区域上确定预设的金属走线区域；
    通过激光刻蚀工艺将所述预设的金属走线区域之外的电镀层刻蚀掉，形成金属走线。
  8. 根据权利要求7所述的方法，其中，所述在所述粗化区域上进行整体的电镀为镀铜。
  9. 根据权利要求1所述的方法，其中，所述对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域的步骤，包括：
    利用激光对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行照射，提高所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面的粗糙程度，并形成粗化区域。
  10. 根据权利要求1所述的方法，其中，所述对所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面进行粗糙化处理，形成粗化区域的步骤，包括：
    所述粗化区域为多个，且彼此间隔开，所述多个粗化区域与所述金属走线一一对应，所述金属走线形成在所述粗化区域内。
  11. 一种阵列基板，由权利要求1中的所述方法制作，包括：
    衬底基板，所述衬底基板相对两面中的一面形成有显示单元且另一面形成有驱动电路，所述相对两面的边缘区域、以及连接所述相对两面的边缘区域的侧面包括粗化区域；
    金属走线，所述金属走线形成在所述粗化区域，用于连接所述显示单元的信号输入端和所述驱动电路信号输出端。
  12. 根据权利要求11所述的阵列基板，其中，在所述粗化区域上设置有由氧化形成的氧化层，在所述粗化区域上设置有由金属离子沉积形成的电镀种子层，其中所述金属走线通过电镀形成在所述电镀种子层上。
  13. 根据权利要求11所述的阵列基板，其中，所述衬底基板的上表面阵列排布所述显示单元，所述显示单元包括薄膜晶体管阵列层和Micro LED， 所述薄膜晶体管阵列层位于Micro LED与衬底基板之间。
  14. 根据权利要求11所述的阵列基板，其中，在所述显示单元和/或驱动电路上覆盖可剥离的保护膜。
  15. 根据权利要求11所述的阵列基板，其中，所述粗化区域为多个，且彼此间隔开，所述多个粗化区域与所述金属走线一一对应。
  16. 一种显示装置，包括如权利要求11-15所述的阵列基板。
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