WO2021068165A1 - 显示基板母板的制作方法和显示装置 - Google Patents

显示基板母板的制作方法和显示装置 Download PDF

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Publication number
WO2021068165A1
WO2021068165A1 PCT/CN2019/110400 CN2019110400W WO2021068165A1 WO 2021068165 A1 WO2021068165 A1 WO 2021068165A1 CN 2019110400 W CN2019110400 W CN 2019110400W WO 2021068165 A1 WO2021068165 A1 WO 2021068165A1
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Prior art keywords
layer
inorganic film
display substrate
mother board
area
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PCT/CN2019/110400
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English (en)
French (fr)
Inventor
王蓉
舒晓青
张波
肖云升
董向丹
汪锐
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to CN201980001931.4A priority Critical patent/CN113056822A/zh
Priority to PCT/CN2019/110400 priority patent/WO2021068165A1/zh
Priority to US16/966,787 priority patent/US11282867B2/en
Publication of WO2021068165A1 publication Critical patent/WO2021068165A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/18—Packaging or power distribution
    • G06F1/183—Internal mounting support structures, e.g. for printed circuit boards, internal connecting means
    • G06F1/184—Mounting of motherboards
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a manufacturing method of a display substrate mother board and a display device.
  • organic light-emitting diodes Compared with traditional liquid crystal displays (LCD), organic light-emitting diodes (Organic Light-Emitting Diode, referred to as OLED) have the advantages of self-luminescence, wide color gamut, high contrast, lightness and thinness, which makes OLEDs widely used in new smart wearables Device.
  • LCD liquid crystal displays
  • OLED Organic Light-Emitting Diode
  • the display substrate needs to be obtained by cutting the display substrate mother board.
  • the effect of cutting the display substrate mother board in the related art is not ideal, and the yield of the display substrate after cutting is not high.
  • the embodiment of the present disclosure provides a manufacturing method of a display substrate mother board and a display device.
  • embodiments of the present disclosure provide a display substrate mother board, including a plurality of display units on an organic substrate and a cutting area between adjacent display units, the cutting area including the organic substrate, and An inorganic film layer covering the organic substrate.
  • the total thickness of the inorganic film layer in the cutting area is in the range of 200-400 nm.
  • the display substrate mother board further includes a frame area between the display unit and the cutting area, the inorganic film layer in the frame area includes a barrier layer on the organic substrate, the The inorganic film layer in the cutting area includes a part of the barrier layer on the organic substrate.
  • the thickness of part of the barrier layer in the cutting area is smaller than the thickness of the barrier layer in the frame area.
  • the thickness of part of the barrier layer in the cutting area is in the range of 200-400 nm.
  • the barrier layer has a stepped structure at the boundary between the cutting area and the frame area.
  • the inorganic film layer in the frame area further includes a buffer layer on the barrier layer, a first inorganic film layer in the thin film transistor array layer, and a protective layer.
  • the total thickness of the inorganic film layer in the frame area is in the range of 1700-2100 nm, and the thickness of part of the barrier layer in the cutting area is in the range of 200-400 nm.
  • the orthographic projection area of the first inorganic film layer on the organic substrate in the frame area is located inside the orthographic projection area of the buffer layer on the organic substrate in the frame area .
  • the orthographic projection area of the protective layer on the organic substrate in the frame area is located inside the orthographic projection area of the first inorganic film layer in the frame area on the organic substrate .
  • the inorganic film layer in the frame area further includes a buffer layer sequentially located on the barrier layer, a first inorganic film layer in the thin film transistor array layer, a protective layer, and a second inorganic film layer in the touch structure .
  • the total thickness of the inorganic film layer in the frame area is in the range of 2230-2630 nm, and the thickness of part of the barrier layer in the cutting area is in the range of 200-400 nm.
  • the orthographic projection area of the second inorganic film layer on the organic substrate in the frame area is located inside the orthographic projection area on the organic substrate of the protective layer in the frame area .
  • the organic substrate includes a first organic layer, a second organic layer, and an inorganic material layer located between the first organic layer and the second organic layer, and the second organic layer is located on the Between a plurality of display units and the first organic layer.
  • the organic substrate is a flexible substrate.
  • embodiments of the present disclosure also provide a method for manufacturing a display substrate motherboard, including:
  • a plurality of functional film layers are sequentially formed on an organic substrate, wherein the formation of the inorganic film layers in the plurality of functional film layers includes using an etching process to remove the inorganic film layer in the cutting area of the display substrate mother board At least part of the thickness of the display substrate after forming the light-emitting element and the encapsulation layer, the total thickness of the inorganic film layer in the cutting area of the display substrate mother board is in the range of 200-400 nm.
  • the step of sequentially forming a plurality of functional film layers on an organic substrate includes:
  • An etching process is used to remove part of the thickness of the barrier layer in the cutting area.
  • the step of sequentially forming a plurality of functional film layers on the organic substrate includes:
  • an etching process is used to remove at least part of the thickness of the at least two inorganic film layers in the cutting area.
  • the step of sequentially forming a plurality of functional film layers on the organic substrate includes:
  • a barrier layer, a buffer layer and a thin film transistor array layer are sequentially formed;
  • a protective layer is formed on the side of the thin film transistor array layer away from the organic substrate, and the protective layer in the cutting area is removed by the third etching, so that the display substrate mother board is in the cutting area
  • the thickness of the remaining barrier layer is in the range of 200-400 nm.
  • the step of sequentially forming a plurality of functional film layers on the organic substrate includes:
  • a barrier layer, a buffer layer and a thin film transistor array layer are sequentially formed;
  • a touch structure is formed on the side of the protective layer away from the organic substrate, and the second inorganic film layer and the remaining buffer layer of the touch structure in the cutting area are removed by the third etching And part of the barrier layer, so that the thickness of the remaining barrier layer in the cutting area of the display substrate mother board is in the range of 200-400 nm.
  • embodiments of the present disclosure also provide a display device, including the display substrate as described above.
  • FIG. 1 is a schematic diagram of a partial structure of a display substrate motherboard provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of the inorganic film layer structure of the display substrate mother board in the cutting area provided by another embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of a thin film transistor array layer in a display substrate motherboard provided by another embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of the inorganic film layer structure of the display substrate mother board in the cutting area provided by another embodiment of the present disclosure
  • FIG. 5 is a schematic structural diagram of a touch structure in a display substrate motherboard provided by another embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of a manufacturing process of a display substrate motherboard provided by an embodiment of the disclosure.
  • FIG. 7 is a schematic diagram of a manufacturing process of a display substrate mother board provided by another embodiment of the present disclosure.
  • the effect of cutting the display substrate mother board is not ideal, and the yield of the display substrate after cutting is not high.
  • the embodiments of the present disclosure provide a method for manufacturing a display substrate motherboard and a display device, which can solve the problem that the cutting effect of the display substrate motherboard in the related art is not ideal, and the yield of the display substrate after cutting is not high. .
  • the embodiment of the present disclosure provides a display substrate mother board, which includes a plurality of display units 120 located on an organic substrate 110 and a cutting area I located between adjacent display units 120, and the cutting area I includes the organic substrate 110 , And an inorganic film layer covering the organic substrate 110.
  • an inorganic film layer is provided on the organic substrate, and the inorganic film layer is covered on the organic substrate to avoid the organic substrate during laser cutting.
  • the particles formed by carbonization damage the display substrate, thereby increasing the yield of the display substrate obtained by cutting the display substrate mother board. Therefore, the technical solution provided by the present disclosure can improve the yield of the display substrate obtained by cutting the display substrate mother board.
  • the above-mentioned display substrate motherboard may be a flexible display substrate motherboard or a rigid display substrate motherboard.
  • the organic substrate adopts a flexible substrate, such as a polyimide film;
  • the organic substrate motherboard is a rigid display substrate motherboard, the organic substrate adopts a rigid substrate .
  • the display substrate mother board includes an organic substrate 110 and a plurality of functional film layers on the organic substrate.
  • These functional film layers may be barrier layers, buffer layers, anodes, light emitting layers, gate insulating layers, and interlayer insulating layers. At least one layer in. Among them, a part of the multiple functional film layers will only remain in the display area II during the production process, thereby forming the display unit 120 in the display area II; the other part of the film layers will be etched away in the cutting process during the production process. In the region I, the distance between the upper surface of the display substrate mother board and the organic substrate 110 obtained in this way is not equal.
  • the production process of the inorganic film layer on the organic substrate 110 includes two stages of formation and etching.
  • the inorganic film layer is formed integrally, that is, formed in the display area II and the cutting area I at the same time; in the etching stage, the inorganic film layer located in the cutting area I will be etched at least part of the thickness.
  • the inorganic film layer located in the cutting area I can be etched after each inorganic film layer is formed, or it can be uniformly etched by one etching process after at least two inorganic film layers are formed. Etch the at least two inorganic film layers located in the cutting area I.
  • the total thickness of the inorganic film layers in the cutting area I of the display substrate mother board may be the thickness of any one of the inorganic film layers after being thinned, or the sum of the thicknesses of a plurality of inorganic film layers after being thinned.
  • the part of the upper surface of the display substrate mother board in the display area II is the farthest from the organic substrate, and the part of the upper surface in the cutting area I is the closest to the organic substrate.
  • the laser cuts the display substrate mother board along the laser cutting line, where the laser cutting line is in the cutting area I.
  • the total thickness of the inorganic film layer in the cutting area is in the range of 200-400 nm.
  • the thickness of the inorganic film in the cutting area is too high, and the display substrate obtained after laser cutting is prone to cracks, which reduces the yield of the display substrate; and the thickness of the inorganic film in the cutting area is too low to prevent the formation of carbonization of the organic film during laser cutting The poor effect of the particles will also reduce the yield of the display substrate.
  • the total thickness of the inorganic film layer in the cutting area within the range of 200-400nm, it is possible to avoid carbonization of the organic film layer into particles during cutting, and to ensure that the display substrate obtained after cutting is free of cracks, thereby The yield of the display substrate obtained by cutting the display substrate mother board is improved.
  • the display substrate mother board further includes a frame area III between the display unit and the cutting area I, and the inorganic film layer in the frame area III includes
  • the inorganic film layer in the cutting area I includes a part of the barrier layer 130 on the organic substrate 110.
  • the thickness of part of the barrier layer 130 in the cutting area I is smaller than the thickness of the barrier layer 130 in the frame area III.
  • the remaining inorganic film layers in the cutting area I except for the barrier layer 130 can be removed.
  • the thickness of the remaining barrier layer 130 in the cutting area I may be in the range of 200-400 nm.
  • the barrier layer 130 has a stepped shape at the boundary between the cutting area I and the frame area III.
  • the inorganic film layer in the frame area III further includes a buffer layer 140 sequentially located on the barrier layer 130, and a first inorganic film in the thin film transistor array layer. ⁇ 150 ⁇ 160 ⁇ Layer 150 and protective layer 160.
  • the thin film transistor may be a double-gate thin film transistor, and the thin film transistor array layer may be as shown in FIG. 3.
  • 31 is an organic semiconductor active layer (P-Si)
  • 32 is a first gate
  • 33 is The second gate
  • 34 is the source
  • 35 is the drain.
  • the first inorganic film layer 150 may include a first gate insulating layer 151, a second gate insulating layer 152, and an interlayer insulating layer 153.
  • the first gate The polar insulating layer 151 is used to block the connection between the first gate 32 and the organic semiconductor active layer 31; the second gate insulating layer 152 is used to block the connection between the second gate 33 and the first gate 32; The interlayer insulating layer 153 is used to block the connection between the source 34, the drain 35 and the two gates.
  • the frame area III is located between the display area II and the cutting area I, and serves as a frame in the display substrate formed after the display substrate mother board is cut. In order to ensure the normal use of the display substrate, the thickness of the inorganic film layer in the frame area is not reduced.
  • the total thickness of the inorganic film layer in the cutting area I of the display substrate mother board is the thickness of the barrier layer 130 after being thinned.
  • the etching stage When an inorganic film layer other than the barrier layer 130 is formed on the organic substrate 110, the etching stage will remove all the inorganic film layer located in the cutting area I; when the barrier layer 130 is formed on the organic substrate 110, it The etching stage will remove part of the thickness of the barrier layer 130 in the cutting area, leaving a certain thickness.
  • the remaining part of the barrier layer 130 can prevent the organic substrate 110 from being carbonized to form particles from damaging the display substrate during the laser cutting process, thereby improving the yield of the display substrate obtained by cutting the display substrate mother board.
  • the total thickness of the inorganic film layer in the frame area may be in the range of 1700-2100 nm, and the thickness of part of the barrier layer in the cutting area may be in the range of 200-400 nm.
  • the orthographic projection area of the first inorganic film layer 150 on the organic substrate 110 in the frame area is located on the organic substrate 110 of the buffer layer 140 in the frame area. Inside the orthographic projection area.
  • each etching can etch only one inorganic film layer or at least two inorganic film layers.
  • the first inorganic film layer 150 and part of the buffer layer 140 are removed by one etching. Due to the different heights of the two layers, the area of the removed area of the first inorganic film layer 150 will be larger than the area of the removed area of the buffer layer 140 , So that the orthographic projection area of the first inorganic film layer 150 remaining in the frame area on the organic substrate 110 is located inside the orthographic projection area of the buffer layer 140 remaining in the frame area on the organic substrate 110.
  • the orthographic projection area of the protective layer 160 on the organic substrate in the frame area is the orthographic projection area of the first inorganic film layer 150 on the organic substrate in the frame area Inside the area.
  • the first inorganic film layer 150 is removed by one etching, and the protective layer 160 is removed by another etching.
  • the etch boundary of the first inorganic film layer 150 is etched on the etched protective layer 160. Inside the boundary, that is, the area of the removed area of the protective layer 160 is greater than the area of the removed area of the first inorganic film layer 150, so that the orthographic projection area of the protective layer 160 remaining in the frame area on the organic substrate 110 is located in the remaining area.
  • the first inorganic film layer 150 in the frame area is inside the orthographic projection area on the organic substrate 110.
  • the inorganic film layer in the frame area III further includes a buffer layer 140 sequentially located on the barrier layer 130, and a first inorganic film layer in the thin film transistor array layer.
  • the inorganic film layer in the cutting area I includes a part of the barrier layer 130 on the organic substrate 110.
  • the touch structure may be as shown in FIG. 5.
  • 51 is a touch driving electrode
  • 52 is a touch sensing electrode
  • the second inorganic film layer 170 may include an inorganic material layer 171 and a touch sensor. Insulation layer 172.
  • the inorganic material layer 171 is used to provide a flat surface for the touch drive electrode 51; the touch insulating layer 172 is used to block the connection between the touch drive electrode 51 and the touch sensing electrode 52, so as to ensure that the touch drive electrode and the touch
  • the sensing electrode forms a mutual capacitance structure.
  • the display substrate mother board is fabricated on the protective layer 160 with flexible multi-layer integrated touch technology (Flexible Multiple Layer On Cell, FMLOC for short) to form a touch structure.
  • FMLOC Flexible Multiple Layer On Cell
  • the total thickness of the inorganic film layer in the cutting area I of the display substrate mother board is the thickness of the barrier layer 130 after being thinned.
  • the etching stage When the inorganic film layer is formed on the organic substrate 110 except for the barrier layer 130, the etching stage will remove all the inorganic film layer located in the cutting area; when the barrier layer 130 is formed on the organic substrate 110, its etching The etching stage will remove part of the thickness of the barrier layer 130 in the cutting area, leaving a certain thickness.
  • the remaining part of the barrier layer 130 can prevent the organic substrate 110 from being carbonized to form particles from damaging the display substrate during the laser cutting process, thereby improving the yield of the display substrate obtained by cutting the display substrate mother board.
  • the total thickness of the inorganic film layer in the frame area may be in the range of 2230-2630 nm, and the thickness of part of the barrier layer in the cutting area may be in the range of 200-400 nm.
  • the orthographic projection area of the second inorganic film layer on the organic substrate in the frame area is located inside the orthographic projection area on the organic substrate of the protective layer in the frame area .
  • the second inorganic film layer 170 is removed by one etching, and the protective layer 160 is removed by another etching.
  • the etching boundary of the etching protective layer 160 is located in the etching of the second inorganic film layer 170. Inside the boundary, that is, the area of the removed area of the second inorganic film layer 170 is greater than the area of the removed area of the protective layer 160, so that the second inorganic film layer 170 remaining in the frame area is the orthographic projection area on the organic substrate 110
  • the protective layer 160 remaining in the frame area is inside the orthographic projection area on the organic substrate 110.
  • the organic substrate 110 includes a first organic layer 111, a second organic layer 112, and an inorganic material layer 113 located between the first organic layer 111 and the second organic layer 112.
  • the second organic layer 112 is located between the plurality of display units and the first organic layer 111.
  • the organic substrate is designed
  • LLO laser lift off
  • the embodiment of the present disclosure also provides a manufacturing method of a display substrate mother board, including:
  • a plurality of functional film layers are sequentially formed on an organic substrate, wherein the formation of the inorganic film layers in the plurality of functional film layers includes using an etching process to remove the inorganic film layer in the cutting area of the display substrate mother board At least part of the thickness of the display substrate after forming the light-emitting element and the encapsulation layer, the total thickness of the inorganic film layer in the cutting area of the display substrate mother board is in the range of 200-400 nm.
  • an inorganic film layer is provided on the organic substrate, and the inorganic film layer is covered on the organic substrate to avoid the organic substrate during laser cutting.
  • the particles formed by carbonization damage the display substrate, thereby increasing the yield of the display substrate obtained by cutting the display substrate mother board. Therefore, the technical solution provided by the present disclosure can improve the yield of the display substrate obtained by cutting the display substrate mother board.
  • the above-mentioned display substrate motherboard may be a flexible display substrate motherboard or a rigid display substrate motherboard.
  • the organic substrate adopts a flexible substrate, such as a polyimide film;
  • the organic substrate motherboard is a rigid display substrate motherboard, the organic substrate adopts a rigid substrate .
  • the display substrate mother board includes an organic substrate and multiple functional film layers on the organic substrate.
  • These multiple functional film layers can be barrier layers, buffer layers, anodes, light-emitting layers, gate insulating layers, and interlayer insulating layers. At least one layer. Among them, a part of the multiple functional film layers will only remain in the display area II during the production process, thereby forming the display unit in the display area II; the other part of the film layers will be etched away in the cutting area during the production process In part I, the distance between the upper surface of the display substrate mother board and the organic substrate produced in this way is not equal.
  • the production process of the inorganic film layer on the organic substrate includes two stages of formation and etching.
  • the inorganic film layer is formed integrally, that is, formed in the display area II and the cutting area I at the same time; in the etching stage, the inorganic film layer located in the cutting area I will be etched at least part of the thickness.
  • the inorganic film layer located in the cutting area I can be etched after each inorganic film layer is formed, or it can be uniformly etched by one etching process after at least two inorganic film layers are formed. Etch the at least two inorganic film layers located in the cutting area I.
  • the total thickness of the inorganic film layers in the cutting area I of the display substrate mother board may be the thickness of any one of the inorganic film layers after being thinned, or the sum of the thicknesses of a plurality of inorganic film layers after being thinned.
  • the part of the upper surface of the display substrate mother board in the display area II is the farthest from the organic substrate, and the part of the upper surface in the cutting area I is the closest to the organic substrate.
  • the laser cuts the display substrate mother board along the laser cutting line, where the laser cutting line is in the cutting area I.
  • the total thickness of the inorganic film layer in the cutting area is in the range of 200-400 nm.
  • the thickness of the inorganic film in the cutting area is too high, and the display substrate obtained after laser cutting is prone to cracks, which reduces the yield of the display substrate; and the thickness of the inorganic film in the cutting area is too low to prevent the formation of carbonization of the organic film during laser cutting The poor effect of the particles will also reduce the yield of the display substrate.
  • the total thickness of the inorganic film layer in the cutting area within the range of 200-400nm, it is possible to avoid carbonization of the organic film layer into particles during cutting, and to ensure that the display substrate obtained after cutting is free of cracks, thereby The yield of the display substrate obtained by cutting the display substrate mother board is improved.
  • the step of sequentially forming a plurality of functional film layers on an organic substrate includes:
  • An etching process is used to remove part of the thickness of the barrier layer in the cutting area.
  • the thickness of the remaining barrier layer in the cutting area I is less than the thickness of the barrier layer in the frame area III.
  • the remaining inorganic film layers in the cutting area I can be removed except for the barrier layer.
  • the thickness of the remaining barrier layer in the cutting area I can be in the range of 200-400nm, as the only remaining inorganic film layer in the cutting area I .
  • the barrier layer has a stepped shape at the boundary between the cutting area I and the frame area III.
  • the step of sequentially forming a plurality of functional film layers on the organic substrate includes:
  • an etching process is used to remove at least part of the thickness of the at least two inorganic film layers in the cutting area.
  • the at least two inorganic film layers located in the cutting area can be uniformly etched by one etching process, which can reduce the number of inorganic film layers in the cutting area.
  • the number of etching times can improve the production efficiency of the display substrate mother board.
  • the step of sequentially forming a plurality of functional film layers on the organic substrate includes:
  • a barrier layer, a buffer layer and a thin film transistor array layer are sequentially formed;
  • a protective layer is formed on the side of the thin film transistor array layer away from the organic substrate, and the protective layer in the cutting area is removed by the third etching, so that the display substrate mother board is in the cutting area
  • the thickness of the remaining barrier layer is in the range of 200-400 nm.
  • FIG. 6 after the barrier layer 130, the buffer layer 140 and the first inorganic film layer 150 of the thin film transistor array layer are formed on the organic substrate 110, the structure of the inorganic film layer on the cutting area is shown in FIG. As shown in a; after the first inorganic film layer 150 and part of the buffer layer 140 of the thin film transistor array layer in the cutting area are removed by the first etching (EBA), the inorganic film layer structure on the cutting area is shown in Fig. 6 As shown in b, specifically, after coating photoresist (not shown) on the entire surface of a in FIG. 6 and covering it with a mask 1 (the black object above b in FIG.
  • EBA first etching
  • the etching depth of the first etching is A in FIG. 6; the etching depth of the second etching (EBB) is B in FIG. 6; the etching depth of the third etching (PVX) is The etch depth is C in Figure 6.
  • inorganic film layers such as packaging film layers
  • these inorganic film layers can be removed by etching, leaving only the remaining barrier layer in the cut area.
  • the cutting area of the display substrate mother board retains only the barrier layer with a thickness in the range of 200-400nm before cutting, which can avoid the carbonization of the organic substrate during the laser cutting process to form particles and damage the display.
  • the substrate further improves the yield of the display substrate obtained by cutting the display substrate mother board.
  • the step of sequentially forming a plurality of functional film layers on the organic substrate includes:
  • a barrier layer, a buffer layer and a thin film transistor array layer are sequentially formed;
  • a touch structure is formed on the side of the protective layer away from the organic substrate, and the second inorganic film layer and the remaining buffer layer of the touch structure in the cutting area are removed by the third etching And part of the barrier layer, so that the thickness of the remaining barrier layer in the cutting area of the display substrate mother board is in the range of 200-400 nm.
  • the structure of the inorganic film layer on the cutting area is shown in FIG. 7 in a; after the first inorganic film layer 150 and part of the buffer layer 140 of the thin film transistor array layer in the cutting area are removed by the first etching (EBA), the inorganic film layer structure on the cutting area is shown in the figure As shown in b in Fig. 7, specifically, after coating photoresist (not shown) on the entire surface of a in Fig. 7 and covering it with a mask 4 (the black object above b in Fig.
  • the thickness of the remaining barrier layer in the cutting area of the display substrate mother board is at In the range of 200-400nm, specifically, after coating photoresist (not shown) on the entire surface above e in FIG. 7 and covering it with a mask 6 (the black object above f in FIG. 7), Exposure and development remove the second inorganic film layer 170, the remaining buffer layer 140 and part of the barrier layer 130 in the cutting area.
  • the etching depth of the first etching is A in FIG. 7; the etching depth of the second etching (PVX) is B in FIG. 7; the etching depth of the third etching (TLD) is The etch depth is C in Figure 7.
  • the thickness of the etching will be greater than the thickness of the second inorganic film layer of the touch structure, so this embodiment can The extra etching step for cutting off the remaining buffer layer and part of the barrier layer is omitted, and the production efficiency of the display substrate mother board is improved.
  • inorganic film layers such as packaging film layers
  • these inorganic film layers can be removed by etching, leaving only the remaining barrier layer in the cut area.
  • the cutting area of the display substrate mother board retains only the barrier layer with a thickness in the range of 200-400nm before cutting, which can avoid the carbonization of the organic substrate during the laser cutting process to form particles and damage the display.
  • the substrate further improves the yield of the display substrate obtained by cutting the display substrate mother board.
  • the embodiment of the present disclosure also provides a display device, which includes the above-mentioned display substrate.
  • the display device can be a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.

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Abstract

一种显示基板母板及其制作方法、显示装置，其中显示基板母板，包括位于有机衬底（110）上的多个显示单元（120）和位于相邻显示单元（120）之间的切割区域（I），所述切割区域（I）内包括有机衬底（110）、以及覆盖所述有机衬底（110）的无机膜层。该显示基板母板及其制作方法、显示装置，能够提高切割显示基板母板得到的显示基板的良率。

Description

显示基板母板的制作方法和显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种显示基板母板的制作方法和显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，简称OLED)与传统的液晶显示器(LCD)相比，具有自发光、广色域、高对比度、轻薄等优点，这使得OLED广泛应用于新型的智能可穿戴装置。
显示基板需要通过对显示基板母板进行切割得到，然而，相关技术中对显示基板母板切割的效果并不理想，切割后的显示基板良率不高。
发明内容
本公开实施例提供一种显示基板母板的制作方法和显示装置。
第一方面，本公开实施例提供一种显示基板母板，包括位于有机衬底上的多个显示单元和位于相邻显示单元之间的切割区域，所述切割区域内包括有机衬底、以及覆盖所述有机衬底的无机膜层。
进一步地，所述切割区域内无机膜层的总厚度处于200-400nm的范围内。
进一步地，所述显示基板母板还包括位于所述显示单元和所述切割区域之间的边框区域，所述边框区域内的无机膜层包括位于所述有机衬底上的阻隔层，所述切割区域内的无机膜层包括位于所述有机衬底上的部分阻隔层。
进一步地，所述切割区域内的部分阻隔层的厚度小于所述边框区域内的阻隔层的厚度。
进一步地，所述切割区域内的部分阻隔层的厚度处于200-400nm的范围内。
进一步地，阻隔层在切割区域与边框区域的边界处为台阶结构。
进一步地，所述边框区域内的无机膜层还包括位于所述阻隔层上的缓冲层、薄膜晶体管阵列层中的第一无机膜层和保护层。
进一步地，所述边框区域内的无机膜层的总厚度处于1700-2100nm的范围内，所述切割区域内的部分阻隔层的厚度处于200-400nm的范围内。
进一步地，所述边框区域内的所述第一无机膜层在所述有机衬底上的正投影区域位于所述边框区域内的所述缓冲层在所述有机衬底上的正投影区域内部。
进一步地，所述边框区域内的所述保护层在所述有机衬底上的正投影区域位于所述边框区域内的所述第一无机膜层在所述有机衬底上的正投影区域内部。
进一步地，所述边框区域内的无机膜层还包括依次位于所述阻隔层上的缓冲层、薄膜晶体管阵列层中的第一无机膜层、保护层和触控结构中的第二无机膜层。
进一步地，所述边框区域内的无机膜层的总厚度处于2230-2630nm的范围内，所述切割区域内的部分阻隔层的厚度处于200-400nm的范围内。
进一步地，所述边框区域内的所述第二无机膜层在所述有机衬底上的正投影区域位于所述边框区域内的所述保护层在所述有机衬底上的正投影区域内部。
进一步地，所述有机衬底包括第一有机层、第二有机层、以及位于所述第一有机层和所述第二有机层之间的无机材料层，所述第二有机层位于所述多个显示单元与所述第一有机层之间。
进一步地，所述有机衬底为柔性衬底基板。
第二方面，本公开实施例还提供一种显示基板母板的制作方法，包括：
在有机衬底上依次形成多个功能膜层，其中，在所述多个功能膜层中无机膜层的形成过程中包括采用刻蚀工艺去除所述显示基板母板的切割区域内无机膜层的至少部分厚度，使得形成发光元件和封装层后的显示基板母板在所述切割区域内的无机膜层的总厚度处于200-400nm的范围内。
进一步地，所述在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上形成阻隔层；
采用刻蚀工艺去除所述切割区域内阻隔层的部分厚度。
进一步地，在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上形成至少两层无机膜层后，采用刻蚀工艺去除所述切割区域内所述至少两层无机膜层的至少部分厚度。
进一步地，在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上依次形成阻隔层、缓冲层和薄膜晶体管阵列层；
通过第一次刻蚀，去除所述切割区域内所述薄膜晶体管阵列层的第一无机膜层和部分所述缓冲层；
通过第二次刻蚀，去除所述切割区域内剩余的所述缓冲层和部分阻隔层；
在所述薄膜晶体管阵列层背离所述有机衬底的一侧形成保护层，并通过第三次刻蚀，去除所述切割区域内的所述保护层，使得所述显示基板母板在切割区域内剩余的阻隔层的厚度处于200-400nm的范围内。
进一步地，在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上依次形成阻隔层、缓冲层和薄膜晶体管阵列层；
通过第一次刻蚀，去除所述切割区域内所述薄膜晶体管阵列层的第一无机膜层和部分所述缓冲层；
在所述薄膜晶体管阵列层背离所述有机衬底的一侧形成保护层，并通过第二次刻蚀，去除所述切割区域内的所述保护层；
在所述保护层背离所述有机衬底的一侧形成触控结构，并通过第三次刻蚀，去除所述切割区域内的所述触控结构的第二无机膜层、剩余的缓冲层和部分所述阻隔层，使得所述显示基板母板的切割区域内剩余的阻隔层的厚度处于200-400nm的范围内。
第三方面，本公开实施例还提供一种显示装置，包括如上所述的显示基板。
附图说明
图1为本公开一实施例提供的显示基板母板的局部结构示意图；
图2为本公开另一实施例提供的显示基板母板在切割区域的无机膜层结构示意图；
图3为本公开另一实施例提供的显示基板母板中薄膜晶体管阵列层的结构示意图；
图4为本公开另一实施例提供的显示基板母板在切割区域的无机膜层结构示意图；
图5为本公开另一实施例提供的显示基板母板中触控结构的结构示意图；
图6为本公开一实施例提供的显示基板母板的制作过程示意图；
图7为本公开另一实施例提供的显示基板母板的制作过程示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
相关技术中对显示基板母板切割的效果并不理想，切割后的显示基板良率不高。
本公开实施例针对上述问题，提供一种显示基板母板的制作方法和显示装置，能够解决相关技术中对显示基板母板切割的效果并不理想，切割后的显示基板良率不高的问题。
本公开实施例提供一种显示基板母板，包括位于有机衬底110上的多个显示单元120和位于相邻显示单元120之间的切割区域Ⅰ，所述切割区域Ⅰ内包括有机衬底110、以及覆盖所述有机衬底110的无机膜层。
本公开实施例中，在利用激光对显示基板母板的切割区域进行切割之前，有机衬底上设置有无机膜层，无机膜层覆盖在有机衬底上能够避免在激光切割过程中有机衬底碳化形成颗粒破坏显示基板，进而提高切割显示基板母板得到的显示基板的良率。因此，本公开提供的技术方案能够提高切割显示基板母板得到的显示基板的良率。
上述显示基板母板可以是柔性显示基板母板，也可以是刚性显示基板母板。在显示基板母板为柔性显示基板母板时，有机衬底采用柔性衬底基板，比如聚酰亚胺薄膜；在显示基板母板为刚性显示基板母板时，有机衬底采用刚性衬底基板。
显示基板母板包括有机衬底110和位于有机衬底上的多个功能膜层，这 些多个功能膜层可以是阻隔层、缓冲层、阳极、发光层、栅极绝缘层和层间绝缘层中的至少一层。其中，多个功能膜层中的一部分膜层在制作过程中会只保留位于显示区域Ⅱ的部分，从而在显示区域Ⅱ形成显示单元120；另一部分膜层在制作过程中会刻蚀掉位于切割区域Ⅰ的部分，这样制作得到的显示基板母板的上表面与有机衬底110的距离不等。
本公开实施例中，有机衬底110上的无机膜层在制作过程中包括形成和刻蚀两个阶段。在形成阶段，无机膜层是整体形成的，即同时形成在显示区域Ⅱ和切割区域Ⅰ形成；在刻蚀阶段，位于切割区域Ⅰ内的无机膜层会被刻蚀至少部分厚度。需要说明的是，可以是每一层无机膜层形成后就把位于切割区域Ⅰ内的这一无机膜层刻蚀，也可以是形成至少两层无机膜层后，利用一次刻蚀工艺统一刻蚀位于切割区域Ⅰ内的该至少两层无机膜层。
显示基板母板的切割区域Ⅰ内的无机膜层的总厚度可以是其中任一无机膜层减薄后的厚度，也可以是多个无机膜层减薄后的厚度之和。
显示基板母板的上表面位于显示区域Ⅱ的部分距离有机衬底最远，上表面位于切割区域Ⅰ的部分距离有机衬底最近。
在进行切割时，激光是沿着激光切割线对显示基板母板进行切割的，其中，激光切割线处于切割区域Ⅰ内。
其中，所述切割区域内无机膜层的总厚度处于200-400nm的范围内。
切割区域内的无机膜层厚度过高，激光切割后得到的显示基板容易产生裂纹，降低显示基板的良率；而切割区域内的无机膜层厚度过低，激光切割时防止有机膜层碳化形成颗粒的效果不佳，也会降低显示基板的良率。
本实施例中，通过将切割区域内无机膜层的总厚度设计为200-400nm的范围内，能够既避免切割时有机膜层碳化为颗粒，又能保证切割后得到的显示基板无裂纹，从而提高了切割显示基板母板得到的显示基板的良率。
进一步地，如图2和图3所示，所述显示基板母板还包括位于所述显示单元和所述切割区域Ⅰ之间的边框区域Ⅲ，所述边框区域Ⅲ内的无机膜层包括位于所述有机衬底110上的阻隔层130，所述切割区域Ⅰ内的无机膜层包括位于所述有机衬底110上的部分阻隔层130。
切割区域Ⅰ内的部分阻隔层130的厚度小于边框区域Ⅲ内阻隔层130的 厚度。
其中，可以去除切割区域Ⅰ内除阻隔层130外其余的无机膜层，此时切割区域Ⅰ内剩余的阻隔层130的厚度可以处于200-400nm的范围内。
切割区域Ⅰ内的部分阻隔层130厚度可以通过刻蚀工艺去除，此时阻隔层130在切割区域Ⅰ与边框区域Ⅲ的边界处为台阶形状。
在一可选的实施方式中，如图2所示，所述边框区域Ⅲ内的无机膜层还包括依次位于所述阻隔层130上的缓冲层140、薄膜晶体管阵列层中的第一无机膜层150和保护层160。
本实施例中，薄膜晶体管可以为双栅薄膜晶体管，薄膜晶体管阵列层可以如图3所示，图3中31为有机半导体有源层(P-Si)，32为第一栅极、33为第二栅极、34为源极，35为漏极，其中，第一无机膜层150可以包括第一栅极绝缘层151、第二栅极绝缘层152和层间绝缘层153，第一栅极绝缘层151用于阻隔第一栅极32与有机半导体有源层31之间的连接；第二栅极绝缘层152用于阻隔第二栅极33与第一栅极32之间的连接；层间绝缘层153用于阻隔源极34、漏极35与两个栅极之间的连接。
如图2所示，边框区域Ⅲ位于显示区域Ⅱ和切割区域Ⅰ之间，在显示基板母板切割后形成的显示基板中作为边框。为确保显示基板的正常使用，边框区域的无机膜层的厚度不进行减薄。
本实施例中，显示基板母板的切割区域Ⅰ内的无机膜层的总厚度为阻隔层130减薄后的厚度。
在有机衬底110上形成除阻隔层130之外的无机膜层时，其刻蚀阶段会将位于切割区域Ⅰ内的无机膜层全部去除；在有机衬底110上形成阻隔层130时，其刻蚀阶段会将在切割区域内的阻隔层130的部分厚度去除，余留下一定的厚度。
本实施例中，通过剩余的部分阻隔层130能够避免在激光切割过程中有机衬底110碳化形成颗粒破坏显示基板，进而提高切割显示基板母板得到的显示基板的良率。
其中，所述边框区域内的无机膜层的总厚度可以处于1700-2100nm的范围内，所述切割区域内的部分阻隔层的厚度可以处于200-400nm的范围内。
进一步地，所述边框区域内的所述第一无机膜层150在所述有机衬底110上的正投影区域位于所述边框区域内的所述缓冲层140在所述有机衬底110上的正投影区域内部。
在显示基板的制作过程中，会经历至少一次的刻蚀，每次刻蚀可以只刻蚀一层无机膜层，也可以刻蚀至少两层无机膜层。本实施例中，通过一次刻蚀去除第一无机膜层150和部分缓冲层140，由于两层的高度不同，第一无机膜层150被去除区域的面积会大于缓冲层140被去除区域的面积，使得剩余在边框区域内的第一无机膜层150在有机衬底110上的正投影区域位于剩余在边框区域内的缓冲层140在有机衬底110上的正投影区域内部。
进一步地，所述边框区域内的所述保护层160在所述有机衬底上的正投影区域位于所述边框区域内的所述第一无机膜层150在所述有机衬底上的正投影区域内部。
在显示基板的制作过程中，会经历至少二次的刻蚀。本实施例中，通过一次刻蚀去除第一无机膜层150，通过另一次刻蚀去除保护层160，其中，刻蚀第一无机膜层150的刻蚀边界位于刻蚀保护层160的刻蚀边界内部，即保护层160的被去除区域的面积大于第一无机膜层150的被去除区域的面积，使得剩余在边框区域内的保护层160在有机衬底110上的正投影区域位于剩余在边框区域内的第一无机膜层150在有机衬底110上的正投影区域内部。
在另一可选的实施方式中，如图4所示，所述边框区域Ⅲ内的无机膜层还包括依次位于所述阻隔层130上的缓冲层140、薄膜晶体管阵列层中的第一无机膜层150、保护层160和触控结构中的第二无机膜层170，所述切割区域Ⅰ内的无机膜层包括位于所述有机衬底110上的部分阻隔层130。
本实施例中，触控结构可以如图5所示，图5中51为触控驱动电极、52为触控感应电极，其中，第二无机膜层170可以包括和无机材料层171和触控绝缘层172。无机材料层171用于为触控驱动电极51提供平坦面；触控绝缘层172用于阻隔触控驱动电极51和触控感应电极52之间的连接，从而能够保证触控驱动电极与触控感应电极形成互容结构。
本实施例中，显示基板母板在保护层160上进行了柔性多层一体化集成触控技术(Flexible Multiple Layer On Cell，简称FMLOC)的制作，形成触控 结构。
本实施例中，显示基板母板的切割区域Ⅰ内的无机膜层的总厚度为阻隔层130减薄后的厚度。
在有机衬底110上形成除阻隔层130之外的无机膜层时，其刻蚀阶段会将位于切割区域内的无机膜层全部去除；在有机衬底110上形成阻隔层130时，其刻蚀阶段会将在切割区域内的阻隔层130的部分厚度去除，余留下一定的厚度。
本实施例中，通过剩余的部分阻隔层130能够避免在激光切割过程中有机衬底110碳化形成颗粒破坏显示基板，进而提高切割显示基板母板得到的显示基板的良率。
其中，所述边框区域内的无机膜层的总厚度可以处于2230-2630nm的范围内，所述切割区域内的部分阻隔层的厚度可以处于200-400nm的范围内。
进一步地，所述边框区域内的所述第二无机膜层在所述有机衬底上的正投影区域位于所述边框区域内的所述保护层在所述有机衬底上的正投影区域内部。
在显示基板的制作过程中，会经历至少二次的刻蚀。本实施例中，通过一次刻蚀去除第二无机膜层170，通过另一次刻蚀去除保护层160，其中，刻蚀保护层160的刻蚀边界位于刻蚀第二无机膜层170的刻蚀边界内部，即第二无机膜层170的被去除区域的面积大于保护层160的被去除区域的面积，使得剩余在边框区域内的第二无机膜层170在有机衬底110上的正投影区域位于剩余在边框区域内的保护层160在有机衬底110上的正投影区域内部。
进一步的，所述有机衬底110包括第一有机层111、第二有机层112、以及位于所述第一有机层111和所述第二有机层112之间的无机材料层113，所述第二有机层112位于所述多个显示单元与所述第一有机层111之间。
由于在显示基板的制作过程中需要通过激光剥离(LLO)工艺将显示基板从玻璃基板上剥离，而剥离过程中激光容易破坏显示基板的有机衬底，本实施例中，通过将有机衬底设计为两层有机层的结构，能够确保剥离后的显示基板中至少有一层有机层作为有机衬底，提高显示基板的制作良率。
本公开实施例还提供一种显示基板母板的制作方法，包括：
在有机衬底上依次形成多个功能膜层，其中，在所述多个功能膜层中无机膜层的形成过程中包括采用刻蚀工艺去除所述显示基板母板的切割区域内无机膜层的至少部分厚度，使得形成发光元件和封装层后的显示基板母板在所述切割区域内的无机膜层的总厚度处于200-400nm的范围内。
本公开实施例中，在利用激光对显示基板母板的切割区域进行切割之前，有机衬底上设置有无机膜层，无机膜层覆盖在有机衬底上能够避免在激光切割过程中有机衬底碳化形成颗粒破坏显示基板，进而提高切割显示基板母板得到的显示基板的良率。因此，本公开提供的技术方案能够提高切割显示基板母板得到的显示基板的良率。
上述显示基板母板可以是柔性显示基板母板，也可以是刚性显示基板母板。在显示基板母板为柔性显示基板母板时，有机衬底采用柔性衬底基板，比如聚酰亚胺薄膜；在显示基板母板为刚性显示基板母板时，有机衬底采用刚性衬底基板。
显示基板母板包括有机衬底和位于有机衬底上的多个功能膜层，这些多个功能膜层可以是阻隔层、缓冲层、阳极、发光层、栅极绝缘层和层间绝缘层中的至少一层。其中，多个功能膜层中的一部分膜层在制作过程中会只保留位于显示区域Ⅱ的部分，从而在显示区域Ⅱ形成显示单元；另一部分膜层在制作过程中会刻蚀掉位于切割区域Ⅰ的部分，这样制作得到的显示基板母板的上表面与有机衬底的距离不等。
本公开实施例中，有机衬底上的无机膜层在制作过程中包括形成和刻蚀两个阶段。在形成阶段，无机膜层是整体形成的，即同时形成在显示区域Ⅱ和切割区域Ⅰ形成；在刻蚀阶段，位于切割区域Ⅰ内的无机膜层会被刻蚀至少部分厚度。需要说明的是，可以是每一层无机膜层形成后就把位于切割区域Ⅰ内的这一无机膜层刻蚀，也可以是形成至少两层无机膜层后，利用一次刻蚀工艺统一刻蚀位于切割区域Ⅰ内的该至少两层无机膜层。
显示基板母板的切割区域Ⅰ内的无机膜层的总厚度可以是其中任一无机膜层减薄后的厚度，也可以是多个无机膜层减薄后的厚度之和。
显示基板母板的上表面位于显示区域Ⅱ的部分距离有机衬底最远，上表面位于切割区域Ⅰ的部分距离有机衬底最近。
在进行切割时，激光是沿着激光切割线对显示基板母板进行切割的，其中，激光切割线处于切割区域Ⅰ内。
其中，所述切割区域内无机膜层的总厚度处于200-400nm的范围内。
切割区域内的无机膜层厚度过高，激光切割后得到的显示基板容易产生裂纹，降低显示基板的良率；而切割区域内的无机膜层厚度过低，激光切割时防止有机膜层碳化形成颗粒的效果不佳，也会降低显示基板的良率。
本实施例中，通过将切割区域内无机膜层的总厚度设计为200-400nm的范围内，能够既避免切割时有机膜层碳化为颗粒，又能保证切割后得到的显示基板无裂纹，从而提高了切割显示基板母板得到的显示基板的良率。
进一步地，所述在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上形成阻隔层；
采用刻蚀工艺去除所述切割区域内阻隔层的部分厚度。
本实施例中，在减薄切割区域Ⅰ内阻隔层的部分厚度后，切割区域Ⅰ内剩余的阻隔层的厚度小于边框区域Ⅲ内阻隔层的厚度。
其中，可以去除切割区域Ⅰ内除阻隔层外其余的无机膜层，此时切割区域Ⅰ内剩余的阻隔层的厚度可以处于200-400nm的范围内，作为切割区域Ⅰ中仅剩余的无机膜层。
刻蚀完成后，阻隔层在切割区域Ⅰ与边框区域Ⅲ的边界处为台阶形状。
进一步地，在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上形成至少两层无机膜层后，采用刻蚀工艺去除所述切割区域内所述至少两层无机膜层的至少部分厚度。
本实施例中，可以在有机衬底上形成至少两层无机膜层后，利用一次刻蚀工艺统一刻蚀位于切割区域内的该至少两层无机膜层，这样能够减少切割区域内无机膜层的刻蚀次数，提高显示基板母板的制作效率。
进一步地，在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上依次形成阻隔层、缓冲层和薄膜晶体管阵列层；
通过第一次刻蚀，去除所述切割区域内所述薄膜晶体管阵列层的第一无机膜层和部分所述缓冲层；
通过第二次刻蚀，去除所述切割区域内剩余的所述缓冲层和部分阻隔层；
在所述薄膜晶体管阵列层背离所述有机衬底的一侧形成保护层，并通过第三次刻蚀，去除所述切割区域内的所述保护层，使得所述显示基板母板在切割区域内剩余的阻隔层的厚度处于200-400nm的范围内。
本实施例中，如图6所示，在有机衬底110上形成阻隔层130、缓冲层140和薄膜晶体管阵列层的第一无机膜层150后，切割区域上的无机膜层结构如图6中的a所示；通过第一次刻蚀(EBA)去除切割区域内薄膜晶体管阵列层的第一无机膜层150和部分缓冲层140后，此时切割区域上的无机膜层结构如图6中的b所示，具体的，在图6中a的上方整面涂覆光刻胶(图未示)并通过掩膜板1(如图6中的b上方的黑色物体)遮盖后，曝光显影去除切割区域内薄膜晶体管阵列层的第一无机膜层150和部分缓冲层140；再通过第二次刻蚀(EBB)去除切割区域内剩余的缓冲层和部分阻隔层，得到如图6中的c所示层结构，具体的，在图6中b的上方整面涂覆光刻胶(图未示)并通过掩膜板2(如图6中的c上方的黑色物体)遮盖后，曝光显影去除切割区域内剩余的缓冲层和部分阻隔层；在有机衬底上形成保护层后，切割区域上的无机膜层结构如图6中的d所示；通过第三次刻蚀(PVX)去除切割区域内的保护层，得到如图6中的e所示的层结构，使得所述显示基板母板在切割区域内剩余的阻隔层的厚度处于200-400nm的范围内，具体的，在图6中d的上方整面涂覆光刻胶(图未示)并通过掩膜板3(如图6中的e上方的黑色物体)遮盖后，曝光显影去除切割区域内的保护层。
其中，第一次刻蚀(EBA)的刻蚀深度为图6中的A；第二次刻蚀(EBB)的刻蚀深度为图6中的B；第三次刻蚀(PVX)的刻蚀深度为图6中的C。
在形成保护层后，有机衬底上还可以形成其他无机膜层(例如：封装薄膜层)，可以继续通过刻蚀去除这些无机膜层，只在切割区域保留剩余的阻隔层。
本实施例中，通过多次刻蚀使显示基板母板的切割区域在切割之前仅保留厚度处于200-400nm的范围内的阻隔层，能够避免在激光切割过程中有机衬底碳化形成颗粒破坏显示基板，进而提高切割显示基板母板得到的显示基板的良率。
进一步地，在有机衬底上依次形成多个功能膜层的步骤，包括：
在有机衬底上依次形成阻隔层、缓冲层和薄膜晶体管阵列层；
通过第一次刻蚀，去除所述切割区域内所述薄膜晶体管阵列层的第一无机膜层和部分所述缓冲层；
在所述薄膜晶体管阵列层背离所述有机衬底的一侧形成保护层，并通过第二次刻蚀，去除所述切割区域内的所述保护层；
在所述保护层背离所述有机衬底的一侧形成触控结构，并通过第三次刻蚀，去除所述切割区域内的所述触控结构的第二无机膜层、剩余的缓冲层和部分所述阻隔层，使得所述显示基板母板的切割区域内剩余的阻隔层的厚度处于200-400nm的范围内。
在本实施例中，如图7所示，在有机衬底110上形成阻隔层130、缓冲层140和薄膜晶体管阵列层的第一无机膜层150后，切割区域上的无机膜层结构如图7中的a所示；通过第一次刻蚀(EBA)去除切割区域内薄膜晶体管阵列层的第一无机膜层150和部分缓冲层140后，此时切割区域上的无机膜层结构如图7中的b所示，具体的，在图7中a的上方整面涂覆光刻胶(图未示)并通过掩膜板4(如图7中的b上方的黑色物体)遮盖后，曝光显影去除切割区域内薄膜晶体管阵列层的第一无机膜层150和部分缓冲层140；在有机衬底110上形成保护层160后，切割区域上的无机膜层结构如图7中的c所示；通过第二次刻蚀(PVX)去除切割区域内的保护层160，此时切割区域上的无机膜层结构如图7中的d所示，具体的，在图7中c的上方整面涂覆光刻胶(图未示)并通过掩膜板5(如图7中的d上方的黑色物体)遮盖后，曝光显影去除切割区域内的保护层160；在保护层背离有机衬底110的一侧形成触控结构后，切割区域上的无机膜层结构如图7中的e所示；通过第三次刻蚀(TLD)，去除切割区域内的触控结构的第二无机膜层170、剩余的缓冲层140和部分阻隔层130后，切割区域上的无机膜层结构如图7中的f所示，使得所述显示基板母板在切割区域内剩余的阻隔层的厚度处于200-400nm的范围内，具体的，在图7中e的上方整面涂覆光刻胶(图未示)并通过掩膜板6(如图7中的f上方的黑色物体)遮盖后，曝光显影去除切割区域内的第二无机膜层170、剩余的缓冲层140和部分阻隔层130。
其中，第一次刻蚀(EBA)的刻蚀深度为图7中的A；第二次刻蚀(PVX) 的刻蚀深度为图7中的B；第三次刻蚀(TLD)的刻蚀深度为图7中的C。
需要说明的是，第三次刻蚀(TLD)为了确保触控结构与显示基板中的导电材料连接，刻蚀的厚度会大于触控结构的第二无机膜层的厚度，因此本实施例能够省去额外用于切除剩余的缓冲层和部分阻隔层的刻蚀步骤，提高显示基板母板的制作效率。
在形成保护层后，有机衬底上还可以形成其他无机膜层(例如：封装薄膜层)，可以继续通过刻蚀去除这些无机膜层，只在切割区域保留剩余的阻隔层。
本实施例中，通过多次刻蚀使显示基板母板的切割区域在切割之前仅保留厚度处于200-400nm的范围内的阻隔层，能够避免在激光切割过程中有机衬底碳化形成颗粒破坏显示基板，进而提高切割显示基板母板得到的显示基板的良率。
本公开实施例还提供了一种显示装置，包括如上所述的显示基板。
显示装置可以是显示器、手机、平板电脑、电视机、可穿戴电子设备、导航显示设备等。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
以上所述仅是本公开的可选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开原理的前提下，还可以做出若干改进和润 饰，这些改进和润饰也应视本公开的保护范围。

Claims (21)

  1. 一种显示基板母板，包括位于有机衬底上的多个显示单元和位于相邻显示单元之间的切割区域，所述切割区域内包括有机衬底、以及覆盖所述有机衬底的无机膜层。
  2. 根据权利要求1所述的显示基板母板，其中，所述切割区域内无机膜层的总厚度处于200-400nm的范围内。
  3. 根据权利要求1所述的显示基板母板，其中，所述显示基板母板还包括位于所述显示单元和所述切割区域之间的边框区域，所述边框区域内的无机膜层包括位于所述有机衬底上的阻隔层，所述切割区域内的无机膜层包括位于所述有机衬底上的部分阻隔层。
  4. 根据权利要求3所述的显示基板母板，其中，所述切割区域内的部分阻隔层的厚度小于所述边框区域内的阻隔层的厚度。
  5. 根据权利要求4所述的显示基板母板，其中，所述切割区域内的部分阻隔层的厚度处于200-400nm的范围内。
  6. 根据权利要求3所述的显示基板母板，其中，阻隔层在切割区域与边框区域的边界处为台阶形状。
  7. 根据权利要求3所述的显示基板母板，其中，所述边框区域内的无机膜层还包括依次位于所述阻隔层上的缓冲层、薄膜晶体管阵列层中的第一无机膜层和保护层。
  8. 根据权利要求7所述的显示基板母板，其中，所述边框区域内的无机膜层的总厚度处于1700-2100nm的范围内，所述切割区域内的部分阻隔层的厚度处于200-400nm的范围内。
  9. 根据权利要求7所述的显示基板母板，其中，所述边框区域内的所述第一无机膜层在所述有机衬底上的正投影区域位于所述边框区域内的所述缓冲层在所述有机衬底上的正投影区域内部。
  10. 根据权利要求7所述的显示基板母板，其中，所述边框区域内的所述保护层在所述有机衬底上的正投影区域位于所述边框区域内的所述第一无机膜层在所述有机衬底上的正投影区域内部。
  11. 根据权利要求3所述的显示基板母板，其中，所述边框区域内的无机膜层还包括依次位于所述阻隔层上的缓冲层、薄膜晶体管阵列层中的第一无机膜层、保护层和触控结构中的第二无机膜层，所述切割区域内的无机膜层包括位于所述有机衬底上的部分阻隔层。
  12. 根据权利要求11所述的显示基板母板，其中，所述边框区域内的无机膜层的总厚度处于2230-2630nm的范围内，所述切割区域内的部分阻隔层的厚度处于200-400nm的范围内。
  13. 根据权利要求11所述的显示基板母板，其中，所述边框区域内的所述第二无机膜层在所述有机衬底上的正投影区域位于所述边框区域内的所述保护层在所述有机衬底上的正投影区域内部。
  14. 根据权利要求1所述的显示基板母板，其中，所述有机衬底包括第一有机层、第二有机层、以及位于所述第一有机层和所述第二有机层之间的无机材料层，所述第二有机层位于所述多个显示单元与所述第一有机层之间。
  15. 根据权利要求1所述的显示基板母板，其中，所述有机衬底为柔性衬底基板。
  16. 一种显示基板母板的制作方法，包括：
    在有机衬底上依次形成多个功能膜层，其中，在所述多个功能膜层中无机膜层的形成过程中包括采用刻蚀工艺去除所述显示基板母板的切割区域内无机膜层的至少部分厚度，使得形成发光元件和封装层后的显示基板母板在所述切割区域内的无机膜层的总厚度处于200-400nm的范围内。
  17. 根据权利要求16所述的显示基板母板的制作方法，其中，所述在有机衬底上依次形成多个功能膜层的步骤，包括：
    在有机衬底上形成阻隔层；
    采用刻蚀工艺去除所述切割区域内阻隔层的部分厚度。
  18. 根据权利要求16所述的显示基板母板的制作方法，其中，在有机衬底上依次形成多个功能膜层的步骤，包括：
    在有机衬底上形成至少两层无机膜层后，采用刻蚀工艺去除所述切割区域内所述至少两层无机膜层的至少部分厚度。
  19. 根据权利要求18所述的显示基板母板的制作方法，其中，在有机衬 底上依次形成多个功能膜层的步骤，包括：
    在有机衬底上依次形成阻隔层、缓冲层和薄膜晶体管阵列层；
    通过第一次刻蚀，去除所述切割区域内所述薄膜晶体管阵列层的第一无机膜层和部分所述缓冲层；
    通过第二次刻蚀，去除所述切割区域内剩余的所述缓冲层和部分阻隔层；
    在所述薄膜晶体管阵列层背离所述有机衬底的一侧形成保护层，并通过第三次刻蚀，去除所述切割区域内的所述保护层，使得所述显示基板母板在切割区域内剩余的阻隔层的厚度处于200-400nm的范围内。
  20. 根据权利要求18所述的显示基板母板的制作方法，其中，在有机衬底上依次形成多个功能膜层的步骤，包括：
    在有机衬底上依次形成阻隔层、缓冲层和薄膜晶体管阵列层；
    通过第一次刻蚀，去除所述切割区域内所述薄膜晶体管阵列层的第一无机膜层和部分所述缓冲层；
    在所述薄膜晶体管阵列层背离所述有机衬底的一侧形成保护层，并通过第二次刻蚀，去除所述切割区域内的所述保护层；
    在所述保护层背离所述有机衬底的一侧形成触控结构，并通过第三次刻蚀，去除所述切割区域内的所述触控结构的第二无机膜层、剩余的缓冲层和部分所述阻隔层，使得所述显示基板母板的切割区域内剩余的阻隔层的厚度处于200-400nm的范围内。
  21. 一种显示装置，包括如权利要求1-15中任一项所述的显示基板母板切割后形成的显示基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113270560A (zh) * 2021-05-19 2021-08-17 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150034935A1 (en) * 2013-07-31 2015-02-05 Samsung Display Co., Ltd. Flexible display device and manufacturing method thereof
CN104377223A (zh) * 2013-08-13 2015-02-25 三星显示有限公司 柔性显示器
CN106992263A (zh) * 2017-04-01 2017-07-28 上海天马微电子有限公司 一种柔性显示面板
CN107919364A (zh) * 2017-11-17 2018-04-17 京东方科技集团股份有限公司 显示基板母板、显示基板及制作方法、显示装置
CN108807480A (zh) * 2018-06-11 2018-11-13 京东方科技集团股份有限公司 显示基板母板及其制作方法、和显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI606986B (zh) * 2012-10-03 2017-12-01 康寧公司 用於保護玻璃表面的物理氣相沉積層
CN109742133B (zh) * 2019-02-28 2021-04-30 云谷（固安）科技有限公司 显示面板及其制备方法和显示装置
CN109860208B (zh) * 2019-02-28 2021-09-21 云谷（固安）科技有限公司 显示面板母板、显示面板及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150034935A1 (en) * 2013-07-31 2015-02-05 Samsung Display Co., Ltd. Flexible display device and manufacturing method thereof
CN104377223A (zh) * 2013-08-13 2015-02-25 三星显示有限公司 柔性显示器
CN106992263A (zh) * 2017-04-01 2017-07-28 上海天马微电子有限公司 一种柔性显示面板
CN107919364A (zh) * 2017-11-17 2018-04-17 京东方科技集团股份有限公司 显示基板母板、显示基板及制作方法、显示装置
CN108807480A (zh) * 2018-06-11 2018-11-13 京东方科技集团股份有限公司 显示基板母板及其制作方法、和显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113270560A (zh) * 2021-05-19 2021-08-17 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置

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