WO2020192349A1 - 掩膜组件的制备方法、掩膜组件 - Google Patents

掩膜组件的制备方法、掩膜组件 Download PDF

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Publication number
WO2020192349A1
WO2020192349A1 PCT/CN2020/076946 CN2020076946W WO2020192349A1 WO 2020192349 A1 WO2020192349 A1 WO 2020192349A1 CN 2020076946 W CN2020076946 W CN 2020076946W WO 2020192349 A1 WO2020192349 A1 WO 2020192349A1
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WIPO (PCT)
Prior art keywords
mask
shielding layer
alignment
frame
vapor deposition
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PCT/CN2020/076946
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English (en)
French (fr)
Inventor
罗昶
杨晓宇
嵇凤丽
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/043,083 priority Critical patent/US11319625B2/en
Publication of WO2020192349A1 publication Critical patent/WO2020192349A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60—Preliminary treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning

Definitions

  • This application relates to the field of evaporation technology. Specifically, this application relates to a method for manufacturing a mask assembly and a mask assembly.
  • an embodiment of the present application provides a method for manufacturing a mask assembly, which includes: after the shielding layer is stretched and aligned, the shielding layer is fixedly arranged on one side of the frame; In the latter shielding layer and the frame, at least one stretching alignment hole and at least one evaporation alignment mark are opened; after the mask is stretched and aligned, according to the stretching alignment hole The mask is fixedly arranged on a side of the shielding layer away from the frame; at least one vapor deposition alignment mark is opened in the fixedly arranged mask to obtain a mask assembly.
  • an embodiment of the present application provides a method for manufacturing a mask assembly, which includes: after the shielding layer is stretched and aligned, the shielding layer is fixedly arranged on one side of the frame; After the plate is stretched and aligned, the mask is fixedly arranged on the side of the shielding layer away from the frame; in at least one of the frame, the shielding layer and the mask after the fixed setting, At least one vapor deposition alignment mark is opened to obtain a mask assembly.
  • an embodiment of the present application provides a mask assembly, including: a frame, a shielding layer, and a mask; the frame and the mask are respectively disposed on both sides of the shielding layer, and are both connected to the shielding layer.
  • the layers are fixedly connected; wherein the mask assembly is obtained by the aforementioned preparation method.
  • Figure 1 is a schematic diagram of a mask assembly structure
  • Figure 2 is a schematic diagram of a method for preparing each hole in a mask assembly
  • FIG. 3 is a schematic diagram of a laser ablation principle of a method for manufacturing a mask assembly provided by an embodiment of the application;
  • FIG. 4 is a schematic flowchart of a method for manufacturing a mask assembly provided by an embodiment of the application.
  • FIG. 5 is a schematic diagram of the structure of a part of the mask assembly prepared by a method for manufacturing a mask assembly provided by an embodiment of the present application by setting alignment marks in the fixed shielding layer and the frame;
  • FIG. 6 is a schematic diagram of a part of the mask assembly manufactured by the method for manufacturing a mask assembly according to an embodiment of the application after the mask is fixedly set;
  • FIG. 7 is a schematic diagram of the structure of a part of the mask assembly prepared by a method for manufacturing a mask assembly provided by an embodiment of the application by setting an alignment mark in the fixed mask plate;
  • FIG. 8 is a schematic flow diagram of another method for manufacturing a mask assembly according to an embodiment of the application.
  • FIG. 9 is a schematic structural diagram of a part of the mask assembly manufactured after the mask plate is fixedly set by another method for manufacturing a mask assembly provided by an embodiment of the application.
  • a mask assembly includes Frame, Blocking, Align Mask, and FMM sheet (Fine metal mask sheet, high-precision metal mask sheet).
  • Frame, Blocking, Align Mask and FMM sheet complete the processing of alignment marks such as alignment holes and inspection mark openings in the production stage. Then, according to the alignment marks of Blocking and Frame, stretch and align the Blocking on the Frame; according to the alignment holes of the Align Mask and FMM sheet, stretch and align the Align Mask and FMM sheet on the Blocking respectively to obtain the existing The laminated plate components.
  • the stretching and alignment operation for Blocking will affect the shape and position of the alignment mark; applying deformed or offset alignment holes to the subsequent Align Mask stretching and FMM sheet stretching will affect Affects the control of the degree of stretching and the accuracy of the alignment, resulting in the deformation or positional deviation of the alignment mark in the entire mask assembly, which is likely to cause the alignment accuracy between the substrate and the mask assembly when the mask assembly is used for vapor deposition. .
  • the Frame (frame), Blocking (blocking layer), Align Mask (alignment mask) and FMM sheet (Fine metal mask sheet) that make up the mask assembly are used.
  • Mask in the production stage, the processing of the alignment marks such as alignment holes and detection mark openings is completed.
  • the shielding layer is stretched, aligned and welded to the frame.
  • the alignment marks set on the shielding layer under the action of stretching such as the stretching alignment holes used to determine the position and extent of the high-precision mask, have undergone a certain degree of deformation and position Offset.
  • the detection mark opening provided on the high-precision mask is inevitably deformed and positionally shifted during the stretching and alignment of the high-precision mask, thereby affecting the accuracy of evaporation.
  • the high-precision masks are mostly strip-shaped and are prone to deformation.
  • a plurality of strip-shaped high-precision masks are arranged together to jointly define the position of the sub-pixel opening.
  • alignment masks are often used for assistance. Because the alignment mask itself is narrow and has many openings, it is easy to retain liquid medicine and is difficult to clean. After being heated in the evaporation process, there is a difference between the expansion of the alignment mask and the expansion of the high-precision mask and the shielding layer. At this time, the alignment holes on the alignment mask will be effectively displayed.
  • the alignment mask is a key component that assists the high-precision mask to achieve the vapor deposition effect.
  • the stretched alignment mask has a certain deformation stress, and its deformation degree is different from that of the effective display area (AA area) under the high temperature environment of vapor deposition, which affects the quality of vapor deposition.
  • the manufacturing method of the mask assembly provided in this application aims to solve the above technical problems.
  • the embodiment of the present application provides a method for manufacturing a mask assembly, as shown in FIG. 4, including:
  • S402 Open at least one stretching alignment hole and at least one vapor deposition alignment mark in the shielding layer and the frame after being fixedly set.
  • the vapor deposition alignment mark includes at least one of a vapor deposition alignment hole and a detection mark opening.
  • At least one stretching alignment hole and at least one vapor deposition alignment mark are opened in the shielding layer and the frame after being fixedly set, including:
  • laser cutting is used to form at least one stretching alignment hole, at least one vapor deposition alignment hole and at least one first detection mark opening;
  • At least one vapor deposition alignment hole is formed by laser cutting.
  • opening at least one vapor deposition alignment mark in the fixedly set mask includes:
  • the obtained vapor deposition alignment holes 52 can be arranged on the four corners of the connecting part of the frame 1 and the shielding layer 2, or they can be distributed.
  • the ground is arranged along the circumference of the connecting part of the frame 1 and the shield 2.
  • the first detection mark opening 51 can be provided between the openings in the shielding layer 2 corresponding to the sub-pixel openings 53 of the mask 3, or can be provided in the shielding layer 2 corresponding to the sub-pixel openings.
  • the second detection mark opening 55 may be arranged between at least part of the sub-pixel openings 53 in the row direction or the column direction of the sub-pixel arrangement.
  • the shielding layer 2 is fixedly arranged on one side of the frame 1.
  • the purpose of this step is to assemble the shielding layer 2 and the frame 1 into one body.
  • the frame 1 is used to provide circumferential support and positioning in the mask assembly.
  • the shielding layer 2 is used to shield at least a part of the non-evaporated area in the evaporation process, so as to prevent the evaporation material from adhering to positions other than the corresponding sub-pixels.
  • the fixing arrangement between the shielding layer 2 and the frame 1 may be welding.
  • the operation of assembling the shielding layer 2 and the frame 1 can be performed through the original alignment marks preset on the shielding layer 2 and the frame 1. At least part of the original alignment marks of the frame 1 and at least part of the original alignment marks of the shielding layer 2 Location matches.
  • the stretching alignment for the shielding layer 2 is completed.
  • the user or the stretching device can determine the degree of stretching of the shielding layer 2 and the frame 1 and the shielding layer 2 based on the relative positional relationship between at least part of the original alignment marks of the frame 1 and at least part of the original alignment marks of the shielding layer 2. The relative position of the relationship.
  • the original alignment mark can be set at the overlapping part of the shielding layer 2 and the frame 1.
  • the shielding layer 2 is adjacent to the darker part of the frame 1.
  • the color difference between the shielding layer 2 and the frame 1 shown in FIG. 5, FIG. 6, FIG. 7 and FIG. 9 is a schematic diagram of the overlapping portion of the shielding layer 2 and the frame 1.
  • the shielding layer 2 can be a partially transparent material, and there is a color difference on the side away from the frame 1 relative to the part overlapping with the frame 1.
  • the shielding layer 2 can also be an opaque material, opposite to the side away from the frame 1 There is no color difference in the overlapping part with frame 1.
  • the number of original alignment marks can be multiple.
  • the original alignment mark of the frame 1 and the original alignment mark of the shielding layer 2 may be hole-shaped. After determining the relative position between the frame 1 and the shielding layer 2, the frame 1 and the shielding layer 2 are fixedly arranged.
  • At least one stretch alignment hole and at least one vapor deposition alignment mark are provided in the shielding layer 2 and the frame 1 after being fixedly arranged.
  • the stretching alignment holes opened in this step are used for stretching and alignment operations of the mask in the subsequent process.
  • the vapor deposition alignment mark is used for alignment, vapor deposition position detection, or vapor deposition position deviation detection in the subsequent vapor deposition process.
  • At least a part of the stretching alignment hole and the vapor deposition alignment mark may have a hole-like structure.
  • the parts with the same function can be provided only on the shielding layer 2 or only on the frame 1; multiple stretch alignment holes and multiple vapor deposition In the alignment mark, the parts with the same function can also be provided on the shielding layer 2 and the frame 1 respectively.
  • Figure 2 shows the original alignment mark forming process.
  • the photoresist material is first coated on the Blocking, and a part of the photoresist material corresponding to the original alignment mark position is removed to form a photoresist material gap.
  • An etching operation is performed on the Blocking on the side coated with the photoresist material, and a groove is formed at a position corresponding to the gap of the photoresist material on the side of the Blocking facing the photoresist material.
  • another groove is formed on the other side of Blocking at the position corresponding to the original alignment mark in the same way, and the grooves on both sides of the Blocking are penetrated to form the original alignment mark.
  • At least part of the stretching alignment hole and the vapor deposition alignment mark are made by a laser cutting process.
  • the laser beam 41 of different wavelengths and intensities can be excited by the laser transmitter 4, which can be performed on raw materials of different thicknesses.
  • Cutting operation The cutting area of laser cutting is narrow, the cutting quality is high, the area affected by the cutting of the raw material is small, and the deformation is small.
  • Laser cutting also has the advantages of high efficiency and fast speed, which can ensure the dimensional accuracy, shape accuracy and position accuracy of the alignment mark to a greater extent.
  • the laser cutting process is also applicable to the production of other alignment marks such as the evaporation alignment hole 52 and the second detection mark opening 55 involved in the embodiment of the present application.
  • the mask is fixedly arranged on the side of the shielding layer 2 away from the frame 1 according to the stretching and alignment holes.
  • the stretching and alignment operations for the mask 3 can be completed by stretching equipment.
  • the mask 3 After determining the stretching degree of the mask 3 and the relative position between the mask 3 and the frame 1, the mask 3 can be fixedly arranged on the side of the shielding layer 2 away from the frame 1 by welding, so that The shielding layer 2 is arranged between the frame 1 and the mask 3.
  • This step directly establishes the matching relationship between the mask 3 and the shielding layer 2 without using an alignment mask, which reduces the difficulty of preparing the mask assembly.
  • the number of mask plates is at least one.
  • multiple masks can be assembled in sequence.
  • At least one vapor deposition alignment mark is opened in the fixed mask 3 to obtain a mask assembly.
  • the vapor deposition alignment mark in this step is used for alignment, vapor deposition position detection, and vapor deposition position deviation detection in the subsequent vapor deposition process.
  • the vapor deposition alignment marks can be divided into multiple types according to their functions, at least one of multiple vapor deposition alignment marks can be provided on the mask 3.
  • at least one vapor deposition alignment mark may also be provided on the frame 1.
  • the vapor deposition alignment mark can include a variety of marks with different functions.
  • the vapor deposition alignment mark includes at least one of the vapor deposition alignment hole and the detection mark opening.
  • the vapor deposition alignment hole 52 is used to determine the vapor deposition position during the vapor deposition process.
  • the detection mark opening is used for alignment, vapor deposition position detection, and vapor deposition position deviation detection in the subsequent vapor deposition process.
  • the plurality of vapor deposition alignment holes 52 and the plurality of detection mark openings are formed after the shielding layer 2 is stretched and positioned, so as to prevent the stretching operation of the shielding layer 2 from affecting the quality of the vapor deposition alignment holes 52 and the detection mark openings.
  • the vapor deposition alignment hole 52 and the detection mark opening maintain the original shape to a large extent. Under the influence of the high temperature of the subsequent vapor deposition process, the vapor deposition alignment hole 52 and The degree of deformation of the detection mark opening can also be matched with the degree of deformation of the operation area (AA area).
  • opening at least one stretching alignment hole and vapor deposition alignment mark in the shielding layer 2 and the frame 1 after being fixedly set may include: forming at least One stretch alignment hole, at least one vapor deposition alignment hole, and at least one first detection mark opening 51, and at least one vapor deposition alignment hole 52 is formed by laser cutting in the fixed frame 1.
  • the sequence of opening the stretching alignment holes and the evaporation alignment marks on the shielding layer is not limited, and can be adjusted according to the actual process environment.
  • the order of setting the alignment mark on the shielding layer 2 and setting the alignment mark on the frame 1 is not limited.
  • the first detection mark opening 51 is provided at least partially for detecting the deviation of the vapor deposition position in the vapor deposition process.
  • the first detection mark opening 51 is also used to assist in forming the second detection mark opening provided on the mask 3 in a subsequent step.
  • At least one of the stretching alignment holes is opened by laser cutting, and at least one of the vapor deposition alignment marks is opened by laser cutting.
  • Lasers of different wavelengths and intensities can be excited by laser emitters to realize cutting operations on raw materials of different thicknesses.
  • the original material may be at least one of the shielding layer, the frame and the mask in the embodiments of the application.
  • the cutting area of laser cutting is narrow, the cutting quality is high, the area affected by the cutting of the raw material is small, and the deformation is small.
  • Laser cutting also has the advantages of high efficiency and fast speed, which can ensure the dimensional accuracy, shape accuracy and position accuracy of the alignment mark to a greater extent.
  • Opening at least one vapor deposition alignment mark in the fixed mask 3 includes: forming at least one second detection mark opening 55 by laser cutting in the fixed mask 3, and the second detection mark opening 55 It is provided corresponding to the first detection mark opening 51.
  • the second detection mark opening 55 is used to detect the vapor deposition position deviation in the vapor deposition process, and the opening position of the first detection mark opening 51 is determined.
  • FIG. 8 The schematic flow chart of the manufacturing method is shown in FIG. 8 and includes:
  • S803 Open at least one vapor deposition alignment mark in at least one of the fixedly set frame, the shielding layer, and the mask to obtain a mask assembly.
  • the alignment mark includes at least one of an evaporation alignment hole and a detection mark opening.
  • At least one evaporation alignment mark is provided in at least one of the frame, the shielding layer and the mask, including:
  • At least one vapor deposition alignment hole is formed in the shielding layer and/or frame after being fixedly arranged by laser cutting.
  • the mask 3 is stretched and aligned, it is fixedly arranged on the side of the shielding layer 2 away from the frame 1.
  • the frame 1 is used to provide circumferential support and positioning in the mask assembly.
  • the shielding layer 2 is used to shield at least a part of the non-evaporated area in the vapor deposition process, so as to prevent the vapor deposition material from adhering to positions other than the sub-pixel openings 53.
  • the mask 3 is used to define the position and shape of the sub-pixels. At least one of the fixing arrangement between the shielding layer 2 and the frame 1 and the fixing arrangement between the mask 3 and the shielding layer 2 may be welding.
  • the operation of assembling the shielding layer 2 and the frame 1 can be performed through the original alignment marks preset on the shielding layer 2 and the frame 1.
  • a reasonable range such as overlapping
  • the alignment between the shielding layer 2 and the mask 3 can also be carried out through the original alignment marks preset on the shielding layer 2 and the mask 3.
  • the original alignment marks set on the shielding layer 2 and the mask set on The relative positional relationship between the original alignment marks on the mask 3 is within a reasonable range, such as overlap, it is determined that the stretching and alignment for the mask 3 is completed.
  • the original alignment mark used for assembling the frame 1 and the shielding layer 2 can be set at the overlapping position of the shielding layer 2 and the frame 1.
  • the original alignment mark used for stretching and aligning the mask 3 can be set at the overlapping part of the shielding layer 2 and the mask 3.
  • the number of original alignment marks can be multiple.
  • the original alignment mark of the frame 1 and the original alignment mark of the shielding layer 2 may be hole-shaped.
  • the number of mask plates is at least one.
  • multiple masks can be assembled in sequence.
  • At least one vapor deposition alignment mark is opened in at least one of the fixedly arranged frame 1, the shielding layer 2 and the mask 3 to obtain a mask assembly.
  • the frame, the shielding layer, and the mask plate after being fixedly set means that the three are assembled.
  • the vapor deposition alignment mark is used for alignment or vapor deposition position detection in the subsequent vapor deposition process.
  • the vapor deposition alignment mark may have a hole-like structure.
  • the parts with the same function may be provided only on the shielding layer 2, or only on the frame 1 or only on the mask 3.
  • parts with the same function may also be provided on the shielding layer 2, the frame 1 and the mask 3, respectively.
  • the vapor deposition alignment mark can include a variety of marks with different functions.
  • the vapor deposition alignment mark includes at least one of the vapor deposition alignment hole and the detection mark opening.
  • the vapor deposition alignment hole is used to determine the vapor deposition position during the vapor deposition process.
  • the detection mark opening is used for alignment, vapor deposition position detection, and vapor deposition position deviation detection in the subsequent vapor deposition process.
  • Opening at least one vapor deposition alignment mark in at least one of the frame 1, the shielding layer 2 and the mask 3 includes: forming at least one detection mark opening in the fixed mask 3 by laser cutting; after the fixed installation In at least one of the shielding layer 2 and the frame 1, at least one vapor deposition alignment hole is formed by laser cutting.
  • At least one of the shielding layer 2 and the frame 1 is provided with an evaporation alignment hole, and the order of opening the detection mark opening on the mask 2 is not limited, and can be adjusted according to the actual process environment.
  • At least one of the vapor deposition alignment marks is created by laser cutting. Lasers of different wavelengths and intensities can be excited by laser emitters to realize cutting operations on raw materials of different thicknesses. The cutting area of laser cutting is narrow, the cutting quality is high, the area affected by the cutting of the raw material is small, and the deformation is small. Laser cutting also has the advantages of high efficiency and fast speed, which can ensure the dimensional accuracy, shape accuracy and position accuracy of the alignment mark to a greater extent.
  • the embodiments of the present application provide a mask assembly, which can be obtained by the method for manufacturing the mask assembly provided in the embodiments of the present application.
  • the mask assembly provided by the embodiment of the application includes:
  • the frame and the mask are respectively arranged on both sides of the shielding layer, and both are fixedly connected with the shielding layer.
  • the mask component in the embodiment of the present application is specifically an FMM (fine metal mask, high-precision metal mask) component.
  • FMM fine metal mask, high-precision metal mask
  • the vapor deposition alignment mark of the mask assembly provided in the embodiment of the present application includes at least one of vapor deposition alignment hole and detection mark opening.
  • the mask assembly provided by the embodiment of the present application includes at least one of the following:
  • At least one of the stretching alignment hole and the evaporation alignment mark is obtained by laser cutting
  • the mask is FMM sheet (fine metal mask sheet, high-precision metal mask).
  • the mask assembly provided by the embodiments of this application has the same inventive concept and the same beneficial effects as the previous embodiments.
  • the shielding layer is first stretched and set on the frame, and then evaporation alignment marks are set in the shielding layer and the frame, so that the shielding layer and the evaporation in the frame
  • the plating alignment hole will not be affected by the stretching operation when the shielding layer is installed; moreover, the evaporation alignment mark in the mask is opened after the mask is stretched and fixed on the shielding layer, making the mask
  • the vapor deposition alignment mark in the film plate is not affected by operations such as stretching when the mask is installed; the probability or degree of deformation or displacement of the vapor deposition alignment hole in the mask assembly of the present application is greatly reduced, to a greater extent It maintains the original shape of the vapor deposition alignment hole, which is beneficial to improve the accuracy of the mask alignment and the accuracy of vapor deposition.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, “plurality” means two or more.

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Abstract

一种掩膜组件的制备方法，包括：对遮挡层（2）进行拉伸和对位后，将遮挡层（2）固定设置在框架（1）的一侧；在固定设置后的遮挡层（2）和框架（1）中，开设至少一个拉伸对位孔和至少一个蒸镀对位标记；对掩膜版（3）进行拉伸和对位后，根据拉伸对位孔将掩膜版（3）固定设置在遮挡层（2）远离框架（1）的一侧；在固定设置后的掩膜版（3）中开设至少一个蒸镀对位标记，得到掩膜组件。还公开了一种掩膜组件的制备方法和一种掩膜组件。

Description

掩膜组件的制备方法、掩膜组件 技术领域
本申请涉及蒸镀技术领域，具体而言，本申请涉及一种掩膜组件的制备方法、掩膜组件。
背景技术
显示面板生产过程中，需通过掩膜组件实现对发光材料的蒸镀。为保证掩膜组件的精确装配和蒸镀位置的精确性，往往在构成掩膜组件的部件上设置多种用于实现不同功能的孔。然而，对位孔的位置偏移，容易造成利用掩膜组件进行蒸镀时基板和掩膜组件之间的对位精度低下。
发明内容
第一方面，本申请实施例提供了一种掩膜组件的制备方法，其中，包括：对遮挡层进行拉伸和对位后，将所述遮挡层固定设置在框架的一侧；在固定设置后的所述遮挡层和所述框架中，开设至少一个拉伸对位孔和至少一个蒸镀对位标记；对掩膜版进行拉伸和对位后，根据所述拉伸对位孔将所述掩膜版固定设置在所述遮挡层远离所述框架的一侧；在固定设置后的所述掩膜版中开设至少一个蒸镀对位标记，得到掩膜组件。
第二方面，本申请实施例提供了一种掩膜组件的制备方法，其中，包括：对遮挡层进行拉伸和对位后，所述将遮挡层固定设置在框架的一侧；对掩膜版进行拉伸和对位后，将所述掩膜版固定设置在所述遮挡层远离所述框架的一侧；在固定设置后的所述框架、遮挡层和掩膜版的至少一个中，开设至少一个蒸镀对位标记，得到掩膜组件。
第三方面，本申请实施例提供了一种掩膜组件，包括：框架、遮挡层和掩膜版；所述框架和掩膜版分别设置在所述遮挡层两侧，且都与所述遮挡层固定连接；其中，所述掩膜组件通过前述的制备方法获得。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为一种掩膜组件结构示意图；
图2为一种掩膜组件中各孔的制备方法的原理示意图；
图3为本申请实施例提供的一种掩膜组件的制备方法的激光烧融原理示意图；
图4为本申请实施例提供的一种掩膜组件的制备方法的流程示意图；
图5为本申请实施例提供的一种掩膜组件的制备方法在固定设置后的遮挡层和框架中开设对位标记，制得的部分掩膜组件的结构示意图；
图6为本申请实施例提供的一种掩膜组件的制备方法在固定设置掩膜版后，制得的部分掩膜组件的结构示意图；
图7为本申请实施例提供的一种掩膜组件的制备方法在固定设置后的掩膜版中开设对位标记，制得的部分掩膜组件的结构示意图；
图8为本申请实施例提供的另一种掩膜组件的制备方法的流程骤示意图；
图9为本申请实施例提供的另一种掩膜组件的制备方法在固定设置掩膜版后，制得的部分掩膜组件的结构示意图。
具体实施方式
下面详细描述本申请，本申请实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的部件或具有相同或类似功能的部件。此外，如果已知技术的详细描述对于示出的本申请的特征是不必要的，则将其省略。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)，具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语，应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除 非像这里一样被特定定义，否则不会用理想化或过于正式的含义来解释。
本技术领域技术人员可以理解，除非特意声明，这里使用的单数形式“一”、“一个”、“所述”和“该”也可包括复数形式。应该进一步理解的是，本申请的说明书中使用的措辞“包括”是指存在所述特征、整数、步骤、操作、元件和/或组件，但是并不排除存在或添加一个或多个其他特征、整数、步骤、操作、元件、组件和/或它们的组。这里使用的措辞“和/或”包括一个或更多个相关联的列出项的全部或任一单元和全部组合。
如图1所示，一种掩膜组件，包括Frame(框架)、Blocking(遮挡层)、Align Mask(对齐掩膜)和FMM sheet(Fine metal mask sheet，高精度金属掩膜版)。Frame、Blocking、Align Mask和FMM sheet在生产阶段即完成对位孔和检测标记开口等对位标记的加工。之后，根据Blocking和Frame的对位标记，将Blocking拉伸对齐焊接在Frame上；根据Align Mask和FMM sheet的对位孔，将Align Mask和FMM sheet分别拉伸对齐焊接在Blocking上，得到现有的压膜版组件。
然而，针对Blocking的拉伸对齐操作，将会影响其上的对位标记的形状和位置；将变形或者位置偏移的对位孔应用到后续的Align Mask拉伸和FMM sheet拉伸中，会影响拉伸程度的控制和对位的精准度，导致整个掩膜组件中对位标记变形或位置偏移，容易造成利用掩膜组件进行蒸镀时基板和掩膜组件之间的对位精度低下。
如图1所示，掩膜组件的制备过程中，将构成掩膜组件的Frame(框架)、Blocking(遮挡层)、Align Mask(对齐掩膜)和FMM sheet(Fine metal mask sheet，高精度金属掩膜版)在生产阶段即完成对位孔和检测标记开口等对位标记的加工。在各对位标记的加工均完成之后，将遮挡层进行拉伸、对位并与框架进行焊接。此时，在拉伸的作用下设置在遮挡层上的对位标记，例如用于确定高精度掩膜版的位置和拉伸程度的拉伸对位孔，已经发生了一定程度的变形和位置偏移。在此之后，通过该变形的拉伸对位孔对高精度掩膜版进行拉伸和位置确定时，难免会到影响。并且，高精度掩膜版上设置的检测标记开口在高精度掩膜版拉伸、对位过程中也难免发生变形和位置偏移，进而影响蒸镀的精准度。
高精度掩膜版多为条状，易于发生变形，多个条状的高精度掩膜版排列在一起共同限定子像素开口的位置。为确定高精度掩膜版的装配位置以及多个条状的高精度掩膜版能够对齐，多使用对齐掩膜进行辅助。对齐掩膜由于自身细窄，且其上设置的开口较多，容易残留药液，不易清洗。在蒸镀工艺中受热之后，对齐掩膜的膨胀情况和高精度掩膜版及遮挡层的膨胀情况之间存在差异，此时利用对齐掩膜上的对位孔对位后，会在有效显示区(AA区)子像素开口位置形成误差，最终导致蒸镀偏差。并且，针对对齐掩膜的拉伸对齐操作，也将会影响其上的对位标记的形状和位置，进而影响高精度掩膜版的拉伸对齐操作的精确度。多次拉伸操作将造成变形误差不断积累，严重影响组装次序在后的部件。同理，多次拉伸操作也会造成对位孔和检测标记开口的变形和位置变化，进而影响蒸镀质量。对齐掩膜作为辅助高精度掩膜版实现蒸镀效果的关键部件，其上对位标记较多，孔内堆积的污物不易于彻底清洗，存在污染子像素的隐患。并且，拉伸后的对齐掩膜存在一定的变形应力，在蒸镀的高温环境下，其变形程度与有效显示区(AA区)的变形程度不同，影响蒸镀质量。
本申请提供的掩膜组件的制备方法，旨在解决如上技术问题。
下面以具体地实施例对本申请的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。下面这几个具体的实施例可以相互结合，对于相同或相似的概念或过程可能在某些实施例中不再赘述。下面将结合附图，对本申请的实施例进行描述。
本申请实施例提供了一种掩膜组件的制备方法，如图4所示，包括：
S401：对遮挡层进行拉伸和对位后，将遮挡层固定设置在框架的一侧。
S402：在固定设置后的遮挡层和框架中，开设至少一个拉伸对位孔和至少一个蒸镀对位标记。
可选地，蒸镀对位标记包括蒸镀对位孔和检测标记开口中的至少一种。
可选地，在固定设置后的遮挡层和框架中，开设至少一个拉伸对位孔和至少一个蒸镀对位标记，包括：
在固定设置后的遮挡层中，利用激光切割形成至少一个拉伸对位孔、至少一个蒸镀对位孔和至少一个第一检测标记开口；
在固定设置后的框架中，利用激光切割形成至少一个蒸镀对位孔。
S403：对掩膜版进行拉伸和对位后，根据拉伸对位孔将掩膜版固定设置在遮挡层远离框架的一侧。
S404：在固定设置后的掩膜版中开设至少一个蒸镀对位标记，得到掩膜组件。
可选地，在固定设置后的掩膜版中开设至少一个蒸镀对位标记，包括：
在固定设置后的掩膜版中，对应于所述第一检测标记开口的位置，利用激光切割形成至少一个第二检测标记开口。例如，如图6所示，本申请实施例介绍的掩膜组件的制备方法，获得的蒸镀对位孔52可设置于框架1和遮挡层2的连接部分的四个角上，也可分布地沿框架1和遮挡2的连接部分的周向设置。如图5至图7所示，第一检测标记开口51可设置于遮挡层2中与掩膜版3的子像素开口53相对应的开口之间，也可设置于遮挡层2中对应于子像素开口53与框架1之间的部分。如图7所示，第二检测标记开口55可在子像素排布的行方向或者列方向上设置于至少部分子像素开口53之间。
下面参照图4所示的掩膜组件的制备方法的部分步骤，以及图5至图7所示的部分掩膜组件的结构，对本申请实施例提供的掩膜组件的制备过程进行示例性的介绍：
(1)组装遮挡层和框架
具体地，在对遮挡层2进行拉伸和对位后，将遮挡层2固定设置在框架1的一侧。本步骤的目的在于将遮挡层2和框架1组装为一体。框架1用于在掩膜组件中提供周向的支撑和定位。遮挡层2用于遮挡蒸镀工艺中的非蒸镀区域的至少部分，避免蒸镀材料附着在对应于子像素以外的位置。遮挡层2和框架1之间的固定设置的方式可为焊接。组装遮挡层2和框架1的操作，可通过遮挡层2和框架1上预设的原始对位标记进行，框架1的至少部分原始对位标记的与遮挡层2的至少部分原始对位标记的位 置匹配。
当设置于遮挡层2上的原始对位标记与设置于框架1上的原始对位标记之间的相对位置关系处于合理范围内，例如重叠，则判定针对遮挡层2的拉伸对位完成。例如，用户或者拉伸设备可根据框架1的至少部分原始对位标记，和遮挡层2的至少部分原始对位标记之间的相对位置关系判断遮挡层2拉伸程度以及框架1和遮挡层2的相对位置关系。
原始对位标记可设置于遮挡层2和框架1重叠的部位。该重叠的部位如图5、图6、图7和图9所示的部分掩膜组件的结构中，遮挡层2临近框架1处颜色较深的部分。图5、图6、图7和图9中所示的遮挡层2临近框架1处的颜色差异为遮挡层2和框架1重叠的部位的示意。遮挡层2可为部分透光的材质，在远离框架1的一侧相对于和框架1重叠的部位存在颜色差异；遮挡层2也可为不透光的材质，在远离框架1的一侧相对于和框架1重叠的部位不存在颜色差异。原始对位标记的数量可为多个。框架1的原始对位标记和遮挡层2的原始对位标记可为孔状。在确定框架1和遮挡层2之间的相对位置之后，将框架1和遮挡层2固定设置。
通过本方法，在将框架1和遮挡层2组装在一起之前，仅需制作能够满足对位要求的原始对位标记即可。例如蒸镀对位孔、检测标记开口在本步骤均没有制作，则本步骤的拉伸不会引起蒸镀对位孔和检测标记开口的形状、尺寸和位置。
(2)在组装后的遮挡层和框架上设置部分对位标记
具体地，如图5所示，在固定设置后的遮挡层2和框架1中，开设至少一个拉伸对位孔和至少一个蒸镀对位标记。本步骤中开设的拉伸对位孔用于后续工艺中的掩膜版的拉伸、对位操作。蒸镀对位标记用于后续蒸镀工艺中的对位、蒸镀位置检测或者蒸镀位置偏差检测。拉伸对位孔和蒸镀对位标记中的至少一部分可具有孔状结构。多个拉伸对位孔和多个蒸镀对位标记中，功能相同的部分可仅设置于遮挡层2上，或者仅设置于框架1上；多个拉伸对位孔和多个蒸镀对位标记中，功能相同的部分也可以分别地设置于遮挡层2和框架1上。
如图2所示的原始对位标记成型工艺。以Blocking(遮挡层)上的对位孔为例，首先将光阻材料涂覆在Blocking上，并将对应于原始对位标记位置的部分光阻材料去除，形成光阻材料缺口。在涂覆有光阻材料的一侧对Blocking实施刻蚀操作，在Blocking朝向光阻材料的一侧相当于光阻材料缺口的位置形成凹槽。其次，在Blocking的另一侧通过同样的方式在对应于原始对位标记位置形成另一个凹槽，并使得位于Blocking两侧的凹槽贯通，形成原始对位标记。
本申请实施例中介绍掩膜组件的制备方法中，拉伸对位孔和蒸镀对位标记中的至少部分通过激光切割工艺制得。具体地，以在遮挡层2上开设第一检测标记开口51为例，如图3所示，通过激光发射器4激发不同波长、强度的激光41，可实现在不同厚度的原材上进行的切割操作。激光切割的切割区细窄，切割质量高，原材受切割影响的区域小，变形小。激光切割还具有效率高、速度快的优点，能够较大程度的保证对位标记的尺寸精度、形状精度和位置精度。激光切割的工艺过程还适用于本申请实施例中涉及的蒸镀对位孔52和第二检测标记开口55等其他对位标记的制作。
(3)组装掩膜版
如图6所示，对掩膜版3进行拉伸和对位后，根据拉伸对位孔将掩膜版固定设置在遮挡层2远离框架1的一侧。本步骤中，针对掩膜版3进行的拉伸和对位操作可通过拉伸设备完成。在确定掩膜版3的拉伸程度，以及掩膜版3与框架1之间的相对位置之后，可通过焊接的方式将掩膜版3固定设置在遮挡层2远离框架1的一侧，使得遮挡层2设置于框架1和掩膜版3之间。本步骤直接在掩膜版3和遮挡层2之间建立配合关系，而无需使用对齐掩膜，降低了掩膜组件的制备难度。
在每个掩膜组件中，掩膜版的数量为至少一个。在组装掩膜版的步骤中，可针对多个掩膜版依次进行组装。
(4)在组装后的掩膜版上设置部分对位标记
在固定设置后的掩膜版3中开设至少一个蒸镀对位标记，得到掩膜组 件。本步骤中的蒸镀对位标记用于后续蒸镀工艺中的对位、蒸镀位置检测、蒸镀位置偏差检测。当蒸镀对位标记根据功能可分为多种时，掩膜版3上可开设多种蒸镀对位标记中的至少一种。在本申请一个可选的实施例中，在步骤组装掩膜版3之后，还可在框架1上开设至少一个蒸镀对位标记。
蒸镀对位标记可包括多种具有不同功能的标记。在本申请一个可选的实施例中，蒸镀对位标记包括：蒸镀对位孔和检测标记开口中的至少一种。如图6所示，蒸镀对位孔52用于在蒸镀过程中确定蒸镀位置。检测标记开口用于后续蒸镀工艺中的对位、蒸镀位置检测、蒸镀位置偏差检测。多个蒸镀对位孔52和多个检测标记开口均在遮挡层2拉伸、定位之后成型，避免遮挡层2的拉伸操作影响蒸镀对位孔52和检测标记开口的质量。并且，通过本申请实施例介绍的方法，使得蒸镀对位孔52和检测标记开口较大程度的保持了原有的形态，在后续蒸镀工艺的高温影响下，蒸镀对位孔52和检测标记开口的变形程度也能够与操作区(AA区)的变形程度匹配。
可选地，在固定设置后的遮挡层2和框架1中，开设至少一个拉伸对位孔和蒸镀对位标记，可包括：在固定设置后的遮挡层2中，利用激光切割形成至少一个拉伸对位孔、至少一个蒸镀对位孔和至少一个第一检测标记开口51，以及在固定设置后的框架1中，利用激光切割形成至少一个蒸镀对位孔52。
在遮挡层上开设拉伸对位孔和蒸镀对位标记的次序不作限制，可根据实际工艺环境进行调整。在遮挡层2上开设对位标记和在框架1上开设对位标记的次序不作限制。第一检测标记开口51具备至少部分的用于检测蒸镀工艺中的蒸镀位置偏差。此外，第一检测标记开口51还用于在后续步骤中辅助成型设置于掩膜版3上的第二检测标记开口。
利用激光切割的方式开设拉伸对位孔中的至少一个，以及利用激光切割的方式开设蒸镀对位标记中的至少一个。通过激光发射器激发不同波长、强度的激光，可实现在不同厚度的原材上进行的切割操作。原材可为本申请实施例中的遮挡层、框架和掩膜版中的至少一项。激光切割的切割 区细窄，切割质量高，原材受切割影响的区域小，变形小。激光切割还具有效率高、速度快的优点，能够较大程度的保证对位标记的尺寸精度、形状精度和位置精度。
在固定设置后的掩膜版3中开设至少一个蒸镀对位标记，包括：在固定设置后的掩膜版3中利用激光切割形成至少一个第二检测标记开口55，第二检测标记开口55对应于第一检测标记开口51设置。第二检测标记开口55用于检测蒸镀工艺中的蒸镀位置偏差，由第一检测标记开口51确定其开设位置。
基于同一发明构思，本申请实施例提供了另一种掩膜组件的制备方法，该制备方法的流程示意图如图8所示，包括：
S801：对遮挡层进行拉伸和对位后，将遮挡层固定设置在框架的一侧。
S802：对掩膜版进行拉伸和对位后，将掩膜版固定设置在遮挡层远离框架的一侧。
S803：在固定设置后的框架、遮挡层和掩膜版的至少一个中，开设至少一个蒸镀对位标记，得到掩膜组件。
可选地，对位标记包括蒸镀对位孔和检测标记开口中的至少一种。
可选地，在框架、遮挡层和掩膜版的至少一个中，开设至少一个蒸镀对位标记，包括：
在固定设置后的掩膜版中利用激光切割形成至少一个检测标记开口；
在固定设置后的遮挡层和/或框架中，利用激光切割形成至少一个蒸镀对位孔。
下面参照图8所示的掩膜组件的制备方法的部分步骤，以及图9所示的部分掩膜组件的结构，对本申请实施例提供的掩膜组件的制备方法具体介绍如下：
(1)组装框架、遮挡层和掩膜版
如图9所示，对掩膜版3进行拉伸和对位后，固定设置在遮挡层2远离框架1的一侧。框架1用于在掩膜组件中提供周向的支撑和定位。遮挡层2用于遮挡蒸镀工艺中的非蒸镀区域的至少部分，避免蒸镀材料附着在 对应于子像素开口53以外的位置。掩膜版3用于限定子像素的位置和形状。遮挡层2和框架1之间的固定设置的方式以及掩膜版3和遮挡层2之间的固定设置方式中至少之一可为焊接。
组装遮挡层2和框架1的操作，可通过遮挡层2和框架1上预设的原始对位标记进行。当设置于遮挡层2上的原始对位标记与设置于框架1上的原始对位标记之间的相对位置关系处于合理范围内，例如重叠，则判定针对遮挡层2的拉伸对位完成。遮挡层2和掩膜版3之间的对位也可通过遮挡层2和掩膜版3上预设的原始对位标记进行，当设置于遮挡层2上的原始对位标记与设置于掩膜版3上的原始对位标记之间的相对位置关系处于合理范围内，例如重叠，则判定针对掩膜版3的拉伸对位完成。用于组装框架1和遮挡层2的原始对位标记可设置于遮挡层2和框架1重叠的部位。用于拉伸、对位掩膜版3的原始对位标记可设置于遮挡层2和掩膜版3重叠的部位。原始对位标记的数量可为多个。框架1的原始对位标记和遮挡层2的原始对位标记可为孔状。
在每个掩膜组件中，掩膜版的数量为至少一个。在组装掩膜版的步骤中，可针对多个掩膜版依次进行组装。
(2)在组装后的遮挡层、框架和掩膜版上设置至少部分对位标记
在固定设置后的框架1、遮挡层2和掩膜版3至少一个中开设至少一个蒸镀对位标记，得到掩膜组件。此处，固定设置后的框架、遮挡层和掩膜版是指对三者进行了组装。蒸镀对位标记用于后续蒸镀工艺中的对位或者蒸镀位置检测。蒸镀对位标记可具有孔状结构。多个蒸镀对位标记中，功能相同的部分可仅设置于遮挡2层上，或者仅设置于框架1上，或者仅设置于掩膜版3上。多个蒸镀对位标记中，功能相同的部分也可以分别地设置于遮挡层2、框架1上和掩膜版3上。
蒸镀对位标记可包括多种具有不同功能的标记。在本申请一个可选的实施例中，蒸镀对位标记包括：蒸镀对位孔和检测标记开口中的至少一种。蒸镀对位孔用于在蒸镀过程中确定蒸镀位置。检测标记开口用于后续蒸镀工艺中的对位、蒸镀位置检测、蒸镀位置偏差检测。
在框架1、遮挡层2和掩膜版3至少一个中开设至少一个蒸镀对位标记，包括：在固定设置后的掩膜版3中利用激光切割形成至少一个检测标记开口；在固定设置后的遮挡层2和框架1的至少一项中，利用激光切割形成至少一个蒸镀对位孔。
在遮挡层2和框架1的至少一项中开设蒸镀对位孔，与在掩膜版2上开设检测标记开口的次序不作限制，可根据实际工艺环境进行调整。利用激光切割的方式开设蒸镀对位标记中的至少一个。通过激光发射器激发不同波长、强度的激光，可实现在不同厚度的原材上进行的切割操作。激光切割的切割区细窄，切割质量高，原材受切割影响的区域小，变形小。激光切割还具有效率高、速度快的优点，能够较大程度的保证对位标记的尺寸精度、形状精度和位置精度。
基于同一发明构思，本申请实施例提供了一种掩膜组件，可通过本申请实施例提供的掩膜组件的制备方法获得。本申请实施例提供的掩膜组件包括：
框架、遮挡层和掩膜版；
框架和掩膜版分别设置在遮挡层两侧，且都与遮挡层固定连接。
可选地，框架、遮挡层和掩膜版中分别开设有至少一个蒸镀对位标记，遮挡层上还开设有拉伸对位孔。可选地，本申请实施例中的掩膜组件具体为FMM(fine metal mask，高精度金属掩膜)组件。在每个掩膜组件中，掩膜版的数量为至少一个。
可选地，本申请实施例提供的掩膜组件的蒸镀对位标记包括蒸镀对位孔和检测标记开口中的至少一种。
可选地，本申请实施例提供的掩膜组件至少包括下述一项：
拉伸对位孔和蒸镀对位标记中的至少一种是利用激光切割得到的；
掩膜版为FMM sheet(fine metal mask sheet，高精度金属掩膜版)。
本申请实施例提供的掩膜组件，与前面的各实施例具有相同的发明构思及相同的有益效果，该掩膜组件中未详细示出的内容可参照前面的各实施例，在此不再赘述。
应用本申请实施例提供的像素驱动电路和像素驱动方法，至少可以实现如下有益效果：
1)采用本申请实施例提供的掩膜组件的制备方法中，先拉伸遮挡层并设置在框架上，后在遮挡层和框架中开设蒸镀对位标记，使得遮挡层和框架中的蒸镀对位孔不会受到安装遮挡层时的拉伸操作的影响；而且，，掩膜版中的蒸镀对位标记是在将掩膜版拉伸固定在遮挡层上之后开设的，使得掩膜版中的蒸镀对位标记不受安装掩膜版时的拉伸等操作的影响；大大降低本申请的掩膜组件中蒸镀对位孔变形或产生位移的几率或程度，较大程度的保持了蒸镀对位孔原有的形态，有利于提高掩膜版对位的精准度，有利于提高蒸镀的精准度。
2)在本申请实施例的掩膜组件中削减了对齐掩膜。简化了掩膜组件的结构以及制备工艺，有利于降低成本。
本技术领域技术人员可以理解，本申请中已经讨论过的各种操作、方法、流程中的步骤、措施、方案可以被交替、更改、组合或删除。进一步地，具有本申请中已经讨论过的各种操作、方法、流程中的其他步骤、措施、方案也可以被交替、更改、重排、分解、组合或删除。进一步地，现有技术中的具有与本申请中公开的各种操作、方法、流程中的步骤、措施、方案也可以被交替、更改、重排、分解、组合或删除。
术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
应该理解的是，虽然附图的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，其可以以其他的顺序执行。而且，附图的流程图中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成， 而是可以在不同的时刻执行，其执行顺序也不必然是依次进行，而是可以与其他步骤或者其他步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。
以上仅是本申请的部分实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (10)

  1. 一种掩膜组件的制备方法，其中，包括：
    对遮挡层进行拉伸和对位后，将所述遮挡层固定设置在框架的一侧；
    在固定设置后的所述遮挡层和所述框架中，开设至少一个拉伸对位孔和至少一个蒸镀对位标记；
    对掩膜版进行拉伸和对位后，根据所述拉伸对位孔将所述掩膜版固定设置在所述遮挡层远离所述框架的一侧；
    在固定设置后的所述掩膜版中开设至少一个蒸镀对位标记，得到掩膜组件。
  2. 根据权利要求1所述的制备方法，其中，所述蒸镀对位标记包括蒸镀对位孔和检测标记开口中的至少一种。
  3. 根据权利要求2所述的制备方法，其中，在固定设置后的所述遮挡层和所述框架中，开设至少一个拉伸对位孔和至少一个蒸镀对位标记，包括：
    在固定设置后的所述遮挡层中，利用激光切割形成至少一个所述拉伸对位孔、至少一个蒸镀对位孔和至少一个第一检测标记开口；
    在固定设置后的所述框架中，利用激光切割形成至少一个所述蒸镀对位孔。
  4. 根据权利要求3所述的制备方法，其中，在固定设置后的所述掩膜版中开设至少一个蒸镀对位标记，包括：
    在固定设置后的所述掩膜版中，对应于所述第一检测标记开口的位置，利用激光切割形成至少一个第二检测标记开口。
  5. 一种掩膜组件的制备方法，其中，包括：
    对遮挡层进行拉伸和对位后，所述将遮挡层固定设置在框架的一侧；
    对掩膜版进行拉伸和对位后，将所述掩膜版固定设置在所述遮挡层远离所述框架的一侧；
    在固定设置后的所述框架、遮挡层和掩膜版的至少一个中，开设至少一个蒸镀对位标记，得到掩膜组件。
  6. 根据权利要求5所述的制备方法，其中，所述蒸镀对位标记包括蒸镀对位孔和检测标记开口中的至少一种。
  7. 根据权利要求6所述的制备方法，其中，在框架、遮挡层和掩膜版的至少一个中，开设至少一个蒸镀对位标记，包括：
    在固定设置后的所述掩膜版中利用激光切割形成至少一个检测标记开口；
    在固定设置后的所述遮挡层和/或框架中，利用激光切割形成至少一个蒸镀对位孔。
  8. 一种掩膜组件，包括：
    框架、遮挡层和掩膜版；
    所述框架和掩膜版分别设置在所述遮挡层两侧，且都与所述遮挡层固定连接；
    其中，所述掩膜组件通过权利要求1或5所述的制备方法获得。
  9. 根据权利要求8所述的掩膜组件，其中，所述蒸镀对位标记包括蒸镀对位孔和检测标记开口中的至少一种。
  10. 根据权利要求9所述的掩膜组件，其中，至少包括下述一项：
    所述拉伸对位孔和蒸镀对位标记中的至少一种是通过激光切割形成；
    所述掩膜版为高精度金属掩膜版。
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