WO2020191981A1 - 一种tft阵列基板以及全面屏显示装置 - Google Patents

一种tft阵列基板以及全面屏显示装置 Download PDF

Info

Publication number
WO2020191981A1
WO2020191981A1 PCT/CN2019/099225 CN2019099225W WO2020191981A1 WO 2020191981 A1 WO2020191981 A1 WO 2020191981A1 CN 2019099225 W CN2019099225 W CN 2019099225W WO 2020191981 A1 WO2020191981 A1 WO 2020191981A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
array substrate
tft array
gate
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/099225
Other languages
English (en)
French (fr)
Inventor
王选芸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2020191981A1 publication Critical patent/WO2020191981A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • This application relates to the field of display technology, and in particular to a TFT array substrate and a full-screen display device that can improve the imaging of a full-screen under-screen camera.
  • a full panel is a relatively broad definition of the design of ultra-high screen-to-body ratio display devices in the display industry.
  • the literal interpretation is that all the front of the display device is a screen, the display area is completely covered by the screen, and a borderless design is adopted around the display area, pursuing an ultra-high screen-to-body ratio close to 100%.
  • FIG. 1A a schematic diagram of an embodiment of a full screen structure.
  • a full-screen mobile phone is taken as an example.
  • the front of the mobile phone is all a screen, the display area 11 of the mobile phone is completely covered by the screen, and a borderless design is adopted around the display area 11.
  • the mobile phone does not have a mobile phone with a 100% front screen, the so-called "Liu Haiping". Coupled with the ultra-narrow frame design, its real screen-to-body ratio (unofficially promoted) can reach about 80% to 90%, which is still a certain distance away from a 100% full screen.
  • the front camera changes from single-camera, to dual-camera, to quad-camera, etc., the demand is increasing day by day, and the front-facing camera of mobile phones is a limiting factor that cannot be bypassed in the development of comprehensive screen technology.
  • FIG. 1B a schematic diagram of the structure of a full-screen separated state of a retractable camera in the prior art.
  • the camera 12 is built into the screen of the display area 11 of the mobile phone, and the camera 12 can be extended and contracted through a retractable support (not shown in the figure) when necessary.
  • this technology is not suitable for some waterproof display devices, and the telescopic camera is inconvenient to use to a certain extent, and its practical convenience and durability still need to be further verified.
  • the purpose of this application is to provide a TFT array substrate and a full-screen display device in view of the problems existing in the prior art, which can place optical sensors such as a front camera under the display screen without requiring a retractable support to realize the It is equipped with functions such as taking pictures, and avoids the influence of the optical sensor on the electrical stability of the channel layer to achieve a true full screen.
  • the present application provides a TFT array substrate.
  • the TFT array substrate includes at least one optical sensor area, the optical sensor area corresponding to at least one optical sensor, and the TFT array in the optical sensor area
  • the substrate includes: a channel layer; and a light-shielding layer disposed under the channel layer.
  • the material of the light-shielding layer is a metal with a light-shielding material.
  • the light-shielding layer and the channel layer have the same width and both ends They are aligned and prepared by using the same mask, and the light shielding layer is used to shield the backlight source generated by the optical sensor, so as to avoid light leakage current and gate bias to the channel layer.
  • the present application also provides a TFT array substrate.
  • the TFT array substrate includes at least one optical sensor area, the optical sensor area corresponding to at least one optical sensor, and the TFT in the optical sensor area
  • the array substrate includes: a channel layer; and a light-shielding layer disposed under the channel layer, and the light-shielding layer is used to shield the backlight source generated by the optical sensor, thereby avoiding light to the channel layer. Leakage current and gate bias.
  • the present application provides a full-screen display device, the full-screen display device includes a display panel and at least one optical sensor, the display panel includes a TFT array substrate, the at least one optical sensor and the An optical sensor area of the array substrate corresponds to; the TFT array substrate in the optical sensor area includes: a channel layer; and a light shielding layer, which is provided below the channel layer, and the light shielding layer is used to shield
  • the backlight source generated by the optical sensor avoids light leakage current and gate bias to the channel layer.
  • an optical sensor is placed under the display screen, and a light-shielding layer is provided under the channel layer of the TFT array substrate corresponding to the optical sensor to block the backlight generated by the optical sensor, thereby avoiding the electrical stability of the channel layer from being backlit The influence of the source light, to avoid display abnormalities.
  • a light-shielding layer is provided under the channel layer of the TFT array substrate corresponding to the optical sensor to block the backlight generated by the optical sensor, thereby avoiding the electrical stability of the channel layer from being backlit The influence of the source light, to avoid display abnormalities.
  • it can greatly increase the screen-to-body ratio of the full-screen display device, reaching a screen-to-body ratio close to 100%, achieving a true full screen ,
  • There is no bangs on the display screen the appearance is beautiful, and it can realize the functions of front camera and other functions without retractable support, which is convenient to use.
  • Figure 1A is a schematic diagram of an embodiment of a full screen structure
  • FIG. 1B is a schematic diagram of the structure of a fully screen separated state of a retractable camera in the prior art
  • FIG. 2A is a schematic diagram of the layered structure of the existing TFT array substrate
  • 2B is a schematic diagram of the layered structure of an embodiment of the TFT array substrate of the present application.
  • the "on” or “under” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the TFT array substrate of the present application includes at least one optical sensor area, the optical sensor area corresponds to at least one optical sensor, and the TFT array substrate in the optical sensor area includes: a channel layer and a channel layer disposed on the channel layer A light-shielding layer underneath, the light-shielding layer is used to shield the backlight source generated by the optical sensor, so as to avoid light leakage current and gate bias to the channel layer.
  • an optical sensor such as a front camera
  • a light-shielding layer is provided under the channel layer of the TFT array substrate corresponding to the optical sensor to block the backlight generated by the optical sensor and avoid the channel layer
  • the electrical stability is affected by the illumination of the backlight (for example, light leakage current and grid bias dependence under strong light irradiation) to avoid abnormal display images.
  • the optical sensor is one or more of a camera and an optical fingerprint sensor.
  • FIG. 2A is a schematic diagram of a layered structure of a conventional TFT array substrate for comparison
  • FIG. 2B is a schematic diagram of a layered structure of an embodiment of the TFT array substrate of this application.
  • the TFT array substrate of the present application in the optical sensor area corresponding to the optical sensor includes: a base substrate 211, and a light shield (Light Shield) provided on the base substrate 211 212, a buffer layer (Buffer) 213 provided on the light-shielding layer 212 and the base substrate 211, a channel layer (Poly) 214 provided on the buffer layer 213, provided on the channel
  • a first gate insulating layer (GI1) 215 on the layer 214, a first gate (GE1) 216 disposed on the first gate insulating layer 215, a first gate (GE1) 216 disposed on the first gate 216 and the A second gate insulating layer (GI2) 217 on the first gate insulating layer 215 is disposed on the second gate insulating layer 217 and has the same width as the first gate 216 and is aligned at both ends
  • the channel layer 214 includes a channel region 2141 corresponding to the first gate 216 and source/drain contact regions 2142 located on both sides of the channel region 2141; the source/drain contact regions 2142 A through hole 2201 is provided between the source/drain 220 and the source/drain 220 is in contact with the source/drain contact region 2142 through the through hole 2201.
  • the first gate 216 also serves as a lower plate of a capacitor (Capacitor) of the TFT array substrate, and the second gate 218 serves as an upper plate of the capacitor at the same time.
  • the display panel adopting the TFT array substrate of the present application is an OLED display panel, and the OLED display panel further includes an anode (ANO) 223 provided on the flat layer 222 of the TFT array substrate.
  • An OLED 224 and a Pixel Defined Layer (PDL) 225 on the anode 223 are described.
  • the OLED display panel of the present application may also include other components, such as a photoresist layer (Photo Spacer, PS for short), a cathode (Cathode), and a TFE encapsulation layer, etc., which will not be repeated here.
  • a TFT array substrate in the prior art includes a base substrate 211a, a buffer layer 213a, a channel layer 214a, a first gate insulating layer 215a, and a first gate layer that are stacked in sequence.
  • the display panel using the TFT array substrate in the prior art further includes an anode 223a, an OLED 224a, and a pixel definition layer 225a disposed on the flat layer 222a.
  • the TFT array substrate of the present application only needs to provide a light-shielding layer under the channel layer corresponding to the optical sensor area of the optical sensor, and other non-optical sensor areas do not need to make this design.
  • the light-shielding layer shields the backlight source generated by the optical sensor, avoiding the light leakage current of the backlight source to the channel layer and the gate bias dependence under strong light irradiation, and avoiding the thin film transistor of the TFT array substrate, especially the driving
  • the thin film transistor has an irreversible effect, so as to avoid display abnormalities.
  • the structure of the TFT array substrate of the present application does not affect the pixel circuit design and layout.
  • the pixel circuit adopts 7T1C or other layouts, it only needs to be installed under the channel layer of the optical sensor area corresponding to the optical sensor.
  • One layer of light-shielding layer is sufficient, and the existing TFT array substrate is slightly modified, the manufacturing process is simple, the production cost is low, and the implementation is easy.
  • the TFT array substrate of the present application is manufactured using Low Temperature Poly-silicon (LTPS) technology.
  • LTPS Low Temperature Poly-silicon
  • Low-temperature polysilicon technology is to form a low-temperature polysilicon drive circuit by forming, exposing, and etching films with different patterns and different materials to form a low-temperature polysilicon driving circuit, which provides lighting signals and stable power input for light-emitting devices.
  • the TFT array substrate of the present application uses a single-layer source/drain metal layer in the TFT array substrate in the optical sensor area. It should be noted that, as the mainstream technology of LTPS, using a single-layer source/drain metal layer or a double-layer source/drain metal layer can adopt the improved structure of the TFT array substrate described in this application, that is, under the channel layer Set up a shading layer.
  • the base substrate 211 may be a composite layer composed of a silicon oxide (SiOx) layer and a silicon nitride (SiNx) layer superimposed, or a flexible substrate made of a high molecular polymer.
  • the high molecular polymer may be polyimide (PI)
  • the flexible substrate may be a yellow PI substrate or a transparent PI substrate.
  • the color of the yellow PI substrate is light yellow, and the color will be different with the temperature change of the process and different manufacturers.
  • the material of the light shielding layer 212 is metal with light shielding material.
  • the light shielding layer 212 and the channel layer 214 have the same width and are aligned at both ends. In this way, during the manufacturing process, the light shielding layer 212 and the channel layer 214 can be prepared using the same photomask, so that the number of photomasks does not need to be increased during the manufacturing process of the TFT array substrate, and the number of photomasks is saved. Can achieve shading effect.
  • the buffer layer 213 may be a silicon oxide (SiOx) layer or a silicon nitride (SiNx) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the material of the channel layer 214 is polysilicon (Poly-Si).
  • the channel region 2141 is formed by depositing polysilicon on the buffer layer 213, etching and patterning, and the polysilicon is doped with heavy ions to form the source/drain contact region 2142.
  • the first gate insulating layer 215, the second gate insulating layer 217, and the dielectric insulating layer 219 may be made of the same material.
  • all of them may be a silicon oxide (SiOx) layer or a silicon nitride (SiNx) layer, or a composite layer composed of a silicon oxide (SiOx) layer and a silicon nitride (SiNx) layer superimposed.
  • first gate 216 and the second gate 218 may be made of the same metal material.
  • both may be molybdenum (Mo).
  • the material of the source/drain 220 may be one of aluminum (Al) and titanium (Ti), or a stack combination of titanium (Ti)/aluminum (Al)/titanium (Ti).
  • the flat layer 222 may be an organic flat layer (PLN) made of organic materials.
  • PPN organic flat layer
  • the present application also provides a full-screen display device, the full-screen display device includes a display panel and at least one optical sensor, the display panel includes the above-mentioned TFT array substrate of the present application, the at least one The optical sensor corresponds to an optical sensor area of the array substrate.
  • the full-screen display device described in this application can be implemented in various forms. For example, it can include smart phones, tablet computers, notebook computers, palmtop computers, and personal digital assistants (Personal Digital Assistants). Assistant, PDA), wearable devices and other mobile terminal display devices, and fixed terminal display devices such as digital TVs and desktop computers.
  • the display panel is an OLED display panel, which is manufactured using low-temperature polysilicon OLED top-emitting technology. Since OLED is a self-luminous structure and does not require a backlight, it is lighter and thinner and consumes less power. With the top-emitting technology, the light will not be blocked by the driving circuit, and it has a higher aperture ratio than the bottom-emitting structure.
  • the optical sensor is one of a front camera and an optical fingerprint sensor.
  • a plurality of optical sensors may also be provided corresponding to the optical sensor area, for example, a front camera and an optical fingerprint sensor may be provided at the same time.
  • the front camera of the full-screen display device of this application is placed below the display screen, that is, using the camera under panel (CUP) technology, the camera area of the display panel (Panel) can display images and make External light is transmitted to the lens (Lens) of the camera through the entire display panel. Since the front camera is placed under the screen, its exposure system will perceive the surrounding light intensity during the use of the camera, and will often turn on the flash.
  • the flash is equivalent to a backlight source, which will cause light leakage current to the polysilicon channel layer.
  • the grid bias dependence occurs under strong light irradiation.
  • a light-shielding layer is provided under the channel layer to prevent the electrical stability of the thin film transistor from being affected by light.
  • the light shielding layer is only provided at the position of the TFT array substrate above the front camera, and the display area of other non-corresponding cameras does not need to be designed.
  • the existing TFT array substrate is slightly modified, the manufacturing process is simple, the production cost is low, and the implementation is easy.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本申请揭露一种TFT阵列基板以及全面屏显示装置，通过在显示屏幕下方放置光学传感器，在光学传感器对应的TFT阵列基板的沟道层下方设置一层遮光层，遮挡光学传感器所产生的背光源，避免了沟道层电性稳定性受到背光源光照的影响，避免显示画面异常，且显示屏幕上无需给光学传感器预留安置位置，可以极大提高全面屏显示装置的屏占比。

Description

一种TFT阵列基板以及全面屏显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种可以改善全面屏屏下摄像头成像的TFT阵列基板以及全面屏显示装置。
 背景技术
全面屏(full panel)是显示业界对于超高屏占比显示装置设计的一个比较宽泛的定义。从字面上解释就是显示装置的正面全部都是屏幕，显示区域被屏幕完全覆盖，显示区域周围采用无边框设计，追求接近100％的超高屏占比。
 技术问题
参考图1A，全面屏结构一实施例的示意图。本实施例以全面屏手机为例，手机的正面全部都是屏幕，手机显示区域11被屏幕完全覆盖，显示区域11周围采用无边框设计。
但受限于手机前置摄像头、手机听筒、距离传感器和光线传感器等其它手机不可或缺的基本功能需要，现有手机屏幕上方都需要留有一定缺口来安置上述功能部件，业界宣称的全面屏手机并没有能做到手机正面屏占比100％的手机，即所谓的“刘海屏”。加上超窄的边框设计，其真实屏占比(非官方宣传)可以达到80％～90％左右，离100％全面屏还有一定距离。随着前置摄像头从单摄，到双摄，到四摄等，需求与日俱增，而手机前置摄像头又是开发全面屏技术中无法绕过的限制因素。
参考图1B，现有技术中可伸缩摄像头的全面屏分离状态结构示意图。其通过将摄像头12内置于手机显示区域11的屏幕内，需要时通过可伸缩支撑件(未示于图中)实现摄像头12的伸出和收缩。但此技术不适用于部分防水显示装置，且伸缩摄像头在一定程度上使用起来较为不便，其实用方便性和耐久性仍待进一步验证。
因此，如何有效地的提高全面屏显示装置的屏占比，是目前全面屏技术发展急需解决的技术问题。
 技术解决方案
本申请的目的在于，针对现有技术存在的问题，提供一种TFT阵列基板以及全面屏显示装置，可以将前置摄像头等光学传感器放置在显示屏幕下方，不需要可伸缩支撑件即能实现前置拍照等功能，且避免光学传感器对沟道层电性稳定性的影响，以达到真正意义上的全面屏。
为实现上述目的，本申请提供了一种TFT阵列基板，所述TFT阵列基板上包括至少一光学传感器区域，所述光学传感器区域对应于至少一光学传感器，在所述光学传感器区域所述TFT阵列基板包括：一沟道层；以及一遮光层，设置在所述沟道层下方，所述遮光层的材料为具有遮光材质的金属，所述遮光层与所述沟道层宽度相等且两端对齐，并且使用同一张光罩制备，所述遮光层用于遮挡所述光学传感器所产生的背光源，从而避免对所述沟道层产生光漏电流以及栅偏压。
为实现上述目的，本申请还提供了一种TFT阵列基板，所述TFT阵列基板上包括至少一光学传感器区域，所述光学传感器区域对应于至少一光学传感器，在所述光学传感器区域所述TFT阵列基板包括：一沟道层；以及一遮光层，设置在所述沟道层下方，所述遮光层用于遮挡所述光学传感器所产生的背光源，从而避免对所述沟道层产生光漏电流以及栅偏压。
为实现上述目的，本申请提供了一种全面屏显示装置，所述全面屏显示装置包括一显示面板及至少一个光学传感器，所述显示面板包括TFT阵列基板，所述至少一个光学传感器与所述阵列基板的一光学传感器区域相对应；在所述光学传感器区域所述TFT阵列基板包括：一沟道层；以及一遮光层，设置在所述沟道层下方，所述遮光层用于遮挡所述光学传感器所产生的背光源，从而避免对所述沟道层产生光漏电流以及栅偏压。
 有益效果
本申请通过在显示屏幕下方放置光学传感器，在光学传感器对应的TFT阵列基板的沟道层下方设置一层遮光层，遮挡光学传感器所产生的背光源，避免了沟道层电性稳定性受到背光源光照的影响，避免显示画面异常。且显示屏幕上无需给光学传感器预留安置位置，并结合无边框等技术，可以极大提高全面屏显示装置的屏占比，可以达到接近100％的屏占比，达到真正意义上的全面屏，显示屏幕上无刘海、外观美观，且不需要可伸缩支撑件即能实现前置拍照等功能，使用方便。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1A，全面屏结构一实施例的示意图；
图1B，现有技术中可伸缩摄像头的全面屏分离状态结构示意图；
图2A，现有TFT阵列基板的层状结构示意图；
图2B，本申请TFT阵列基板一实施例的层状结构示意图。
 本发明的实施方式
下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下文通过参考附图描述的实施方式是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其它工艺的应用和/或其它材料的使用。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
本申请TFT阵列基板上包括至少一光学传感器区域，所述光学传感器区域对应于至少一光学传感器，在所述光学传感器区域所述TFT阵列基板包括：一沟道层以及设置在所述沟道层下方的一遮光层，所述遮光层用于遮挡所述光学传感器所产生的背光源，从而避免对所述沟道层产生光漏电流以及栅偏压。本申请通过在显示屏幕下方放置光学传感器(例如前置摄像头)，在光学传感器对应的TFT阵列基板的沟道层下方设置一层遮光层，遮挡光学传感器所产生的背光源，避免了沟道层电性稳定性受到背光源光照的影响(例如，产生光漏电流以及在强光照射下产生栅偏压依赖性)，避免显示画面异常。且显示屏幕上无需给光学传感器预留安置位置，并结合无边框等技术，可以极大提高全面屏显示装置的屏占比，可以达到接近100％的屏占比，达到真正意义上的全面屏，显示屏幕上无刘海、外观美观，且不需要可伸缩支撑件即能实现前置拍照等功能，使用方便。所述光学传感器为摄像头、光学指纹传感器中的一个或多个。
参考图2A-2B，其中，图2A为现有TFT阵列基板的层状结构示意图作为对比，图2B为本申请TFT阵列基板一实施例的层状结构示意图。
如图2B所示，在本实施例中，本申请TFT阵列基板在对应光学传感器的光学传感器区域包括：一衬底基板211，设于所述衬底基板211上的一遮光层(Light Shield)212，设于所述遮光层212及所述衬底基板211上的一缓冲层(Buffer)213，设于所述缓冲层213上的一沟道层 (Poly)214，设于所述沟道层214上的一第一栅绝缘层(GI1)215，设于所述第一栅极绝缘层215上的一第一栅极(GE1)216，设于所述第一栅极216及所述第一栅极绝缘层215上的一第二栅绝缘层(GI2)217，设于所述第二栅极绝缘层217上、且与所述第一栅极216宽度相等且两端对齐的一第二栅极(GE2)218，设于所述第二栅极218及所述第二栅极绝缘层217上的一介电绝缘层(ILD)219，设于所述介电绝缘层219上的至少一源/漏极(S/D)220，设于所述源/漏极220及所述介电绝缘层219上的一有机层221，设于所述有机层221上的一平坦层222。所述沟道层214包括对应于所述第一栅极216的一沟道区2141以及位于所述沟道区2141两侧的源/漏极接触区2142；所述源/漏极接触区2142与所述源/漏极220之间设有通孔2201，所述源/漏极220通过所述通孔2201与所述源/漏极接触区2142相接触。所述第一栅极216同时作为所述TFT阵列基板的一电容器(Capacitor)的下极板，所述第二栅极218同时作为所述电容器的上极板。
在本实施例中，采用本申请TFT阵列基板的显示面板为OLED显示面板，所述OLED显示面板还包括设于所述TFT阵列基板的平坦层222上的一阳极(ANO)223，设于所述阳极223上的一OLED 224以及一像素定义层(Pixel Defined Layer，简称PDL)225。需要说明的是，本申请OLED显示面板还可以包括其它组件，例如，光阻层 (Photo Spacer，简称PS)，阴极(Cathode)以及TFE封装层等，在此不再赘述。
如图2A所示，作为对比，现有技术中TFT阵列基板包括依次层叠设置的一衬底基板211a、一缓冲层213a、一沟道层214a、一第一栅绝缘层215a、一第一栅极216a、一第二栅绝缘层217a、一第二栅极218a、一介电绝缘层219a、一源/漏极220a、一有机层221a以及一平坦层222a。采用现有技术中TFT阵列基板的显示面板还包括设于所述平坦层222a上的一阳极223a、一OLED 224a以及一像素定义层225a。
也即，本申请TFT阵列基板仅通过在对应光学传感器的光学传感器区域的沟道层下方设置一层遮光层，其它非光学传感器区域无需作此设计。通过遮光层遮挡光学传感器所产生的背光源，避免了背光源对沟道层产生光漏电流以及在强光照射下产生栅偏压依赖性，避免对TFT阵列基板的薄膜晶体管，特别是对驱动薄膜晶体管产生不可逆的影响，从而避免显示画面异常。且本申请TFT阵列基板结构，不影响像素(pixel)电路设计及排布，因此不管像素电路是采用7T1C或者是其它布局，均只需通过在对应光学传感器的光学传感器区域的沟道层下方设置一层遮光层即可，对现有TFT阵列基板改动较小，制程简单，生产成本低，易于实施。
优选的，本申请TFT阵列基板采用低温多晶硅(Low Temperature Poly-silicon，简称LTPS)技术制作。低温多晶硅技术是通过成膜、曝光、蚀刻叠加不同图形不同材质的膜层以形成低温多晶硅驱动电路，其为发光器件提供点亮信号以及稳定的电源输入。
在本实施例中，本申请TFT阵列基板在所述光学传感器区域所述TFT阵列基板采用单层源/漏金属层。需要说明的是，作为LTPS的主流技术，采用单层源/漏金属层或双层源/漏金属层都是可以采用改进后的本申请所述TFT阵列基板的结构，即在沟道层下方设置一层遮光层。
具体的，所述衬底基板211可以为氧化硅(SiOx)层与氮化硅(SiNx)层叠加构成的复合层或采用高分子聚合物制备的柔性基板。高分子聚合物可以为聚酰亚胺(PI)，柔性基板可以为黄色PI基板或透明PI基板。其中，黄色PI基板颜色呈现淡黄色，随着工艺制程的温度变化和不同的生产厂家，颜色会存在不同的差异。
具体的，所述遮光层212的材料为具有遮光材质的金属。优选的，所述遮光层212与所述沟道层214宽度相等且两端对齐。这样，在制备工艺过程，可以将遮光层212与沟道层214使用同一张光罩制备，使得TFT阵列基板在制备过程中无需增加光罩数，节省光罩，同时制备出的TFT阵列基板还可以达到遮光效果。
具体的，所述缓冲层213可以为氧化硅(SiOx)层或氮化硅(SiNx)层，或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述沟道层214的材料为多晶硅(Poly-Si)。通过在缓冲层213上沉积多晶硅、刻蚀并图案化形成沟道区2141，对多晶硅进行重离子掺杂，形成源/漏极接触区2142。
具体的，所述第一栅绝缘层215、所述第二栅绝缘层217以及所述介电绝缘层219可以采用相同材料制成。例如可以均为氧化硅(SiOx)层或氮化硅(SiNx)层，或氧化硅(SiOx)层与氮化硅(SiNx)层叠加构成的复合层。
具体的，所述第一栅极216与所述第二栅极218可以采用相同金属材料制成。例如可以均为钼(Mo)。
具体的，所述源/漏极220的材料可以是铝(Al)、钛(Ti)中的一种，或为钛(Ti) /铝(Al)/ 钛(Ti)的堆栈组合。
具体的，所述平坦层222可以为采用有机材料制成的有机平坦层(PLN)。
基于同一发明构思，本申请还提供了一种全面屏显示装置，所述全面屏显示装置包括一显示面板及至少一个光学传感器，所述显示面板包括本申请上述的TFT阵列基板，所述至少一个光学传感器与所述阵列基板的一光学传感器区域相对应。本申请所述全面屏显示装置可以以各种形式来实施，例如，可以包括诸如智能手机、平板电脑、笔记本电脑、掌上电脑、个人数字助理(Personal Digital Assistant， PDA)、可穿戴设备等移动终端显示装置，以及诸如数字TV、台式计算机等固定终端显示装置。
优选的，所述显示面板为OLED显示面板，采用低温多晶硅OLED顶发光技术制作。由于OLED是自发光结构，不需要背光源，因此体积更轻薄，功耗也较低。而采用顶发光技术，光线不会受到驱动电路的遮挡，相比底发光结构拥有更高的开口率。
所述光学传感器为前置摄像头、光学指纹传感器的其中之一。对应于所述光学传感器区域也可以设置多个光学传感器，例如，同时设置前置摄像头、光学指纹传感器。本申请全面屏显示装置的前置摄像头放置在显示屏幕下方，即采用屏下摄像头(Camera under Panel，简称CUP)技术，显示面板(Panel)的摄像头(Camera)区域既可以显示画面，又可以使外界的光透过整个显示面板传递到摄像头的镜头(Lens)中。由于前置摄像头放置于屏幕下方，在摄像头的使用过程中其曝光系统会感知周围的光强，而且会经常开启闪光灯，闪光灯相当于一个背光源，会对多晶硅沟道层产生光漏电流以及在强光照射下产生栅偏压依赖性。本申请通过在沟道层下方设置一层遮光层，即可避免薄膜晶体管电性稳定性受到光照的影响。且遮光层只在前置摄像头上方的TFT阵列基板位置设置，其它非对应摄像头的显示区域无需作此设计，对现有TFT阵列基板改动较小，制程简单，生产成本低，易于实施。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (20)

  1. 一种TFT阵列基板，其中，所述TFT阵列基板上包括至少一光学传感器区域，所述光学传感器区域对应于至少一光学传感器，在所述光学传感器区域所述TFT阵列基板包括：一沟道层；以及一遮光层，设置在所述沟道层下方，所述遮光层的材料为具有遮光材质的金属，所述遮光层与所述沟道层宽度相等且两端对齐，并且使用同一张光罩制备，所述遮光层用于遮挡所述光学传感器所产生的背光源。
  2. 如权利要求1所述的TFT阵列基板，其中，所述TFT阵列基板采用低温多晶硅技术制作。
  3. 如权利要求1所述的TFT阵列基板，其中，在所述光学传感器区域所述TFT阵列基板还包括单层源/漏金属层或双层源/漏金属层。
  4. 如权利要求1所述的TFT阵列基板，其中，在所述光学传感器区域所述TFT阵列基板进一步包括：一衬底基板，设于所述遮光层下；一缓冲层，设于所述遮光层及所述衬底基板上，所述沟道层设于所述缓冲层上；一第一栅极绝缘层设于所述沟道层上；一第一栅极，设于所述第一栅极绝缘层上；一介电绝缘层，设于所述第一栅极及所述第一栅极绝缘层上；至少一源/漏极，设于所述介电绝缘层上；一有机层，设于所述源/漏极及所述介电绝缘层上；以及一平坦层，设于所述有机层上；并且其中，所述沟道层包括对应于所述第一栅极的一沟道区以及位于所述沟道区两侧的源/漏极接触区；所述源/漏极接触区与所述源/漏极之间设有一通孔，所述源/漏极通过所述通孔与所述源/漏极接触区相接触。
  5. 如权利要求4所述的TFT阵列基板，其中，在所述光学传感器区域所述TFT阵列基板进一步包括：一第二栅极绝缘层，设于所述第一栅极及所述第一栅极绝缘层上；一第二栅极，设于所述第二栅极绝缘层上且与所述第一栅极宽度相等且两端对齐，所述介电绝缘层设于所述第二栅极及所述第二栅极绝缘层上；并且其中，所述第一栅极同时作为所述TFT阵列基板的一电容器的下极板，所述第二栅极同时作为所述电容器的上极板。
  6. 一种TFT阵列基板，其中，所述TFT阵列基板上包括至少一光学传感器区域，所述光学传感器区域对应于至少一光学传感器，在所述光学传感器区域所述TFT阵列基板包括：一沟道层；以及一遮光层，设置在所述沟道层下方，所述遮光层用于遮挡所述光学传感器所产生的背光源。
  7. 如权利要求6所述的TFT阵列基板，其中，所述TFT阵列基板采用低温多晶硅技术制作。
  8. 如权利要求6所述的TFT阵列基板，其中，所述遮光层的材料为具有遮光材质的金属。
  9. 如权利要求6所述的TFT阵列基板，其中，所述遮光层与所述沟道层宽度相等且两端对齐。
  10. 如权利要求6所述的TFT阵列基板，其中，所述遮光层与所述沟道层使用同一张光罩制备。
  11. 如权利要求6所述的TFT阵列基板，其中，在所述光学传感器区域所述TFT阵列基板还包括单层源/漏金属层或双层源/漏金属层。
  12. 如权利要求6所述的TFT阵列基板，其中，在所述光学传感器区域所述TFT阵列基板进一步包括：一衬底基板，设于所述遮光层下；一缓冲层，设于所述遮光层及所述衬底基板上，所述沟道层设于所述缓冲层上；一第一栅极绝缘层设于所述沟道层上；一第一栅极，设于所述第一栅极绝缘层上；一介电绝缘层，设于所述第一栅极及所述第一栅极绝缘层上；至少一源/漏极，设于所述介电绝缘层上；一有机层，设于所述源/漏极及所述介电绝缘层上；以及一平坦层，设于所述有机层上；并且其中，所述沟道层包括对应于所述第一栅极的一沟道区以及位于所述沟道区两侧的源/漏极接触区；所述源/漏极接触区与所述源/漏极之间设有一通孔，所述源/漏极通过所述通孔与所述源/漏极接触区相接触。
  13. 如权利要求12所述的TFT阵列基板，其中，在所述光学传感器区域所述TFT阵列基板进一步包括：一第二栅极绝缘层，设于所述第一栅极及所述第一栅极绝缘层上；一第二栅极，设于所述第二栅极绝缘层上且与所述第一栅极宽度相等且两端对齐，所述介电绝缘层设于所述第二栅极及所述第二栅极绝缘层上；并且其中，所述第一栅极同时作为所述TFT阵列基板的一电容器的下极板，所述第二栅极同时作为所述电容器的上极板。
  14. 一种全面屏显示装置，其中，所述全面屏显示装置包括一显示面板及至少一个光学传感器，所述显示面板包括一TFT阵列基板，所述至少一个光学传感器与所述阵列基板的一光学传感器区域相对应；在所述光学传感器区域所述TFT阵列基板包括：一沟道层；以及一遮光层，设置在所述沟道层下方，所述遮光层用于遮挡所述光学传感器所产生的背光源。
  15. 如权利要求14所述的全面屏显示装置，其中，所述光学传感器为前置摄像头、光学指纹传感器的其中之一。
  16. 如权利要求14所述的全面屏显示装置，其中，所述TFT阵列基板采用低温多晶硅技术制作。
  17. 如权利要求14所述的全面屏显示装置，其中，所述遮光层的材料为具有遮光材质的金属。
  18. 如权利要求14所述的全面屏显示装置，其中，所述遮光层与所述沟道层宽度相等且两端对齐。
  19. 如权利要求14所述的全面屏显示装置，其中，所述遮光层与所述沟道层使用同一张光罩制备。
  20. 如权利要求14所述的全面屏显示装置，其中，在所述光学传感器区域所述TFT阵列基板还包括单层源/漏金属层或双层源/漏金属层。
PCT/CN2019/099225 2019-03-27 2019-08-05 一种tft阵列基板以及全面屏显示装置 Ceased WO2020191981A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910236997.3A CN110047845A (zh) 2019-03-27 2019-03-27 一种tft阵列基板以及全面屏显示装置
CN201910236997.3 2019-03-27

Publications (1)

Publication Number Publication Date
WO2020191981A1 true WO2020191981A1 (zh) 2020-10-01

Family

ID=67275149

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/099225 Ceased WO2020191981A1 (zh) 2019-03-27 2019-08-05 一种tft阵列基板以及全面屏显示装置

Country Status (2)

Country Link
CN (1) CN110047845A (zh)
WO (1) WO2020191981A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110047845A (zh) * 2019-03-27 2019-07-23 武汉华星光电半导体显示技术有限公司 一种tft阵列基板以及全面屏显示装置
CN110678983B (zh) * 2019-08-20 2022-05-31 京东方科技集团股份有限公司 阵列基板、显示设备和制造阵列基板的方法
CN110690231A (zh) * 2019-10-15 2020-01-14 合肥京东方卓印科技有限公司 显示背板及其制作方法、显示面板和显示装置
CN110930869B (zh) * 2019-11-29 2022-05-06 维沃移动通信（杭州）有限公司 一种电子设备
CN110928092A (zh) * 2019-12-13 2020-03-27 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法
CN114175263B (zh) * 2020-05-11 2025-08-22 京东方科技集团股份有限公司 显示面板和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4827796B2 (ja) * 2007-06-06 2011-11-30 株式会社半導体エネルギー研究所 センサ付き表示装置
CN105070720A (zh) * 2015-07-13 2015-11-18 京东方科技集团股份有限公司 集成有传感器的显示面板及其制作方法和显示装置
CN105514119A (zh) * 2016-01-04 2016-04-20 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
CN106775165A (zh) * 2017-01-06 2017-05-31 武汉华星光电技术有限公司 内嵌式触控显示面板及电子装置
CN107230691A (zh) * 2016-03-25 2017-10-03 三星显示有限公司 显示设备及其制造方法
CN110047845A (zh) * 2019-03-27 2019-07-23 武汉华星光电半导体显示技术有限公司 一种tft阵列基板以及全面屏显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103149760B (zh) * 2013-02-19 2015-03-11 合肥京东方光电科技有限公司 薄膜晶体管阵列基板、制造方法及显示装置
CN104617104B (zh) * 2015-01-08 2017-06-13 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN106292108B (zh) * 2016-09-08 2019-03-29 京东方科技集团股份有限公司 一种阵列基板及显示面板
CN106940488B (zh) * 2017-04-27 2019-07-12 上海天马微电子有限公司 显示面板及显示装置
CN108269529B (zh) * 2018-02-24 2021-01-26 武汉华星光电半导体显示技术有限公司 一种改善amoled面板显示亮度不均的方法及amoled面板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4827796B2 (ja) * 2007-06-06 2011-11-30 株式会社半導体エネルギー研究所 センサ付き表示装置
CN105070720A (zh) * 2015-07-13 2015-11-18 京东方科技集团股份有限公司 集成有传感器的显示面板及其制作方法和显示装置
CN105514119A (zh) * 2016-01-04 2016-04-20 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
CN107230691A (zh) * 2016-03-25 2017-10-03 三星显示有限公司 显示设备及其制造方法
CN106775165A (zh) * 2017-01-06 2017-05-31 武汉华星光电技术有限公司 内嵌式触控显示面板及电子装置
CN110047845A (zh) * 2019-03-27 2019-07-23 武汉华星光电半导体显示技术有限公司 一种tft阵列基板以及全面屏显示装置

Also Published As

Publication number Publication date
CN110047845A (zh) 2019-07-23

Similar Documents

Publication Publication Date Title
WO2020191981A1 (zh) 一种tft阵列基板以及全面屏显示装置
US11127763B2 (en) Display panel and manufacturing method thereof and display device
US11417716B2 (en) Organic light emitting display substrate and panel with photodetector for light compensation of subpixel
US9543443B2 (en) Thin film transistor assembly, array substrate method of manufacturing the same, and display device
CN101533781B (zh) 薄膜晶体管的制造方法、以及显示装置的制造方法
US11133366B2 (en) Array substrate and method of manufacturing the same, and display device
US10502994B2 (en) Color filter on array substrate and fabricating method thereof as well as a display device
CN101577285A (zh) 影像显示系统及其制造方法
US20210167155A1 (en) Thin-film transistor, manufacturing method thereof, array substrate and display device
US8179506B2 (en) Method for fabricating a pixel structure and the pixel structure
KR101999907B1 (ko) 어레이 기판, 디스플레이 패널, 및 어레이 기판의 제조 방법
WO2015096308A1 (zh) Oled显示面板及其制作方法
CN101521182A (zh) 显示装置的制造方法
US8058657B2 (en) Display device
TW201809818A (zh) 顯示裝置
CN107623009A (zh) 阵列基板的制备方法、阵列基板和显示装置
CN114792715B (zh) 显示面板
US8304266B2 (en) Manufacturing method of thin film transistor substrate of liquid crystal display panel
US11107842B2 (en) Pixel array substrate
US9847427B2 (en) Array substrate, method for fabricating the same, and display device
WO2020186985A1 (zh) 低温多晶硅基板及其制作方法、阵列基板及显示装置
CN111834465A (zh) 阵列基板、显示面板及显示装置
US11895896B2 (en) Display device including a sensing electrode
US20250118717A1 (en) Array substrate, manufacturing method therefor and display panel
CN115498043A (zh) 半导体器件及电子器件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19921679

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19921679

Country of ref document: EP

Kind code of ref document: A1