WO2020155384A1 - 柔性oled模组堆叠结构及其制备方法 - Google Patents

柔性oled模组堆叠结构及其制备方法 Download PDF

Info

Publication number
WO2020155384A1
WO2020155384A1 PCT/CN2019/082164 CN2019082164W WO2020155384A1 WO 2020155384 A1 WO2020155384 A1 WO 2020155384A1 CN 2019082164 W CN2019082164 W CN 2019082164W WO 2020155384 A1 WO2020155384 A1 WO 2020155384A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
base substrate
stack structure
module stack
flexible oled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/082164
Other languages
English (en)
French (fr)
Inventor
向磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/478,987 priority Critical patent/US11411189B2/en
Publication of WO2020155384A1 publication Critical patent/WO2020155384A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/065—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of foam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/18—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/05—5 or more layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/10—Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/42—Polarizing, birefringent, filtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2379/00—Other polymers having nitrogen, with or without oxygen or carbon only, in the main chain
    • B32B2379/08—Polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/208—Touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate

Definitions

  • the present disclosure relates to the field of display technology, in particular to a flexible OLED module stack structure and a preparation method thereof.
  • OLED display is a promising flat panel display technology. It has self-luminous, simple structure, ultra-thin, fast response speed, wide viewing angle, low power consumption and flexible display. And other characteristics. At present, OLED displays have been favored by major display manufacturers, and have become the following CRT (Cathode Ray Tube monitors and liquid crystal displays (Liquid Crystal Display, LCD) after the third generation of monitors.
  • CRT Cathode Ray Tube monitors
  • LCD Liquid Crystal Display
  • the current small-size OLED products include a backplane bonding process in the manufacturing process of the module stage, and the backplane only plays a role of supporting, buffering, and protecting the substrate during the manufacturing process of the flexible OLED module stack structure.
  • the backplane needs to adopt a two-stage structure, so that the middle of the backplane is an air layer. When laser cutting is performed, the air layer will produce more ash.
  • the cost of the backplane structure material is relatively high and bonding bubbles are easily generated, which not only affects the appearance, but also makes the backplane more difficult to fit.
  • the backplane structure has a certain thickness, which makes the flexible OLED module stack structure thicker, which in turn affects the thickness of the OLED product, which is not in line with the current trend.
  • the present disclosure provides a flexible OLED module stack structure and a preparation method thereof, which solves the technical problem that the backplane provided on the base substrate needs to adopt a two-stage structure, which is not only difficult to attach, large thickness, and easy to produce ashes .
  • the present disclosure provides a flexible OLED module stack structure, including:
  • the thin film transistor array layer is arranged on the base substrate;
  • the OLED device layer is arranged on the thin film transistor array layer
  • a cover plate arranged at one end of the film encapsulation layer, the cover plate being a 3D cover plate;
  • the foam layer is arranged on the side of the base substrate away from the thin film transistor array layer.
  • the flexible OLED module stack structure further includes a touch panel, and the touch panel is disposed on the thin film encapsulation layer.
  • the flexible OLED module stack structure further includes a polarizer, and the polarizer is disposed on the touch panel.
  • the thin film encapsulation layer and the touch panel, the polarizer and the cover plate are bonded by OCA optical glue.
  • the material of the base substrate includes polyimide.
  • the foam layer is composed of foam, copper foil, and graphite.
  • an external pin reinforcing plate is provided on the side of the foam away from the base substrate.
  • the cover plate is a glass cover plate.
  • the embodiments of the present disclosure provide a flexible OLED module stack structure, including:
  • the thin film transistor array layer is arranged on the base substrate;
  • the OLED device layer is arranged on the thin film transistor array layer
  • the cover plate is arranged at one end of the film encapsulation layer.
  • the foam layer is arranged on the side of the base substrate away from the thin film transistor array layer for protecting the base substrate.
  • the flexible OLED module stack structure further includes a touch panel, and the touch panel is disposed on the thin film encapsulation layer.
  • the flexible OLED module stack structure further includes a polarizer, and the polarizer is disposed on the touch panel.
  • the thin film encapsulation layer and the touch panel, the polarizer and the cover plate are bonded by OCA optical glue.
  • the material of the base substrate includes polyimide.
  • the foam layer is composed of foam, copper foil, and graphite.
  • an external pin reinforcing plate is provided on the side of the foam away from the base substrate.
  • the cover plate is a glass cover plate.
  • the embodiments of the present disclosure provide a manufacturing method of a flexible OLED module stack structure, including the following steps:
  • S20 sequentially preparing a thin film transistor array layer, an OLED device layer, and a thin film packaging layer on the base substrate;
  • the method further includes sequentially attaching a touch panel and a polarizer on the thin film packaging layer.
  • a laser lift-off method is used to peel the glass substrate from the base substrate.
  • a laser chamfer cutting method is used to chamfer the base substrate.
  • the flexible OLED module stack structure provided by the present disclosure and the preparation method thereof play the role of protecting the base substrate during the module manufacturing process by replacing the backplane with a protective film, and tearing the protective film
  • the flexible OLED module stack structure since there is a foam layer after tearing off, it can also support, buffer and protect the base substrate. Therefore, the overall thickness of the flexible OLED module stack structure is reduced, the bonding difficulty is small, and less ash is generated during the cutting process, thereby reducing the production cost.
  • FIG. 1 is a schematic structural diagram of a stack structure of flexible OLED modules provided in the first embodiment of the disclosure
  • FIGS. 2A to 2G are schematic diagrams of the method for manufacturing the flexible OLED module stack structure provided in the second embodiment of the disclosure.
  • FIG. 3 is a flow chart of the method for manufacturing the stack structure of the flexible OLED module provided in the second embodiment of the disclosure.
  • the present disclosure aims at the prior art flexible OLED module stack structure and the preparation method thereof, and solves the problem that the backplane provided on the base substrate needs to adopt a two-stage structure, which is not only difficult to attach, large thickness, and easy to produce ash technical problem. This embodiment can solve this defect.
  • an embodiment of the present disclosure provides a flexible OLED module stack structure 100, and the flexible OLED module stack structure 100 includes:
  • the thin film transistor array layer 103 is disposed on the base substrate 102;
  • the OLED device layer 104 is disposed on the thin film transistor array layer 103;
  • the thin film encapsulation layer 105 is disposed on the OLED device layer 104, and the thin film encapsulation layer 105 completely covers the OLED device layer 104;
  • the cover 110 is disposed at one end of the thin film encapsulation layer 105 and is fixed to the base substrate 102;
  • the foam layer 111 is disposed on the side of the base substrate 102 away from the thin film transistor array layer 103 for protecting the base substrate 102.
  • the material of the base substrate 102 is polyimide (PI), which is resistant to high temperatures and has good bending properties.
  • the thin film transistor (Thin Film Transistor, TFT) array layer 103 is composed of a plurality of TFTs arranged in an array, and the TFTs are used as switching devices and driving devices of the flexible OLED module stack structure 100.
  • the thin film transistor array layer 103 is provided with a first flexible circuit board 112, and the thin film transistor array layer 103 and the first flexible circuit board 112 can be passed through anisotropic conductive adhesive (anisotropic conductive adhesive).
  • Conductive films (ACF) 113 are bonded.
  • An integrated circuit (IC) chip 114 is disposed on the first flexible circuit board 112 to form a chip on film (COF) 114', and the first flexible circuit board 112 and a printed circuit board (Printed Circuit Board) 114' Board, PCB) 115 can be connected through the ACF 113.
  • COF chip on film
  • PCB printed circuit board
  • the OLED device layer 104 includes an anode, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are sequentially arranged above the thin film transistor array layer 103.
  • a packaging method of thin film packaging can be used, wherein the thin film packaging layer 105 mainly adopts a stacked structure of a barrier layer and a buffer layer disposed on the OLED device layer 104, and the thin film packaging layer 105 completely covers the OLED device layer 104.
  • the barrier layer plays a role of blocking water and oxygen to prevent water vapor or oxygen from invading the OLED device layer 104 and causing darkening of light;
  • the buffer layer is mainly to eliminate the stress between the two barrier layers, The role of gaps and gaps.
  • the cover plate 110 is disposed at one end of the thin film encapsulation layer 105 and is fixed to the base substrate 102 in an adhesive manner.
  • the cover plate 110 may be a 3D cover plate, and the cover plate 110 may be glass Cover plate.
  • the foam layer 111 is disposed on the side of the base substrate 102 away from the thin film transistor array layer 103 and can support, enable and protect the base substrate 102.
  • the foam layer 111 may be composed of foam, copper foil, and graphite.
  • the foam, copper foil, and graphite are arranged in sequence, and between the copper foil and the graphite and between the foam and the copper foil Both are bonded by double-sided tape.
  • the foam layer 111 can also be connected to the base substrate 102 through a double-sided tape.
  • An outer lead reinforcing plate 117 is provided on the side of the foam away from the base substrate to enhance the outer lead bonding of the flexible OLED module stack structure 100. Bonding, OLB) zone bending resistance.
  • the flexible OLED module stack structure 100 further includes a touch panel 107, the touch panel 107 is disposed on the thin film encapsulation layer 105, the touch panel 107 is passed through a first optically clear adhesive (Optically Clear Adhesive, OCA)
  • OCA Optically Clear Adhesive
  • the flexible OLED module stack structure 100 further includes a polarizer 108, one side of the polarizer 108 that emits light/display is bonded to the touch panel 107, and the other side of the polarizer 108 is connected to the cover
  • the second OCA optical glue 109 can also be used to bond the boards 110 together.
  • an embodiment of the present disclosure provides a manufacturing method of a flexible OLED module stack structure 200, which includes the following steps:
  • the base substrate 202 may be formed by coating a polyimide material on the glass substrate 201 by a coater.
  • the base substrate 202 may contain a material with water and oxygen absorption properties to improve the base substrate 202. The water and oxygen blocking performance.
  • S20 Prepare a thin film transistor array layer 203, an OLED device layer 204, and a thin film encapsulation layer 205 on the base substrate 202 in sequence; specifically including the following steps:
  • the thin film transistor array layer 203 is composed of a plurality of TFTs arranged in an array. At the same time, the thin film transistor array layer 203 is provided with a first flexible circuit board 212, and the thin film transistor array layer 203 and the first The flexible circuit board 212 can be bonded through the ACF 213, and the first flexible circuit board 212 is connected to the PCB 215.
  • the OLED device layer 204 can be prepared on the thin film transistor array layer 203 by an evaporation method, including an anode, a hole injection layer, a hole transport layer, and an organic light emitting layer sequentially formed on the thin film transistor array layer 203 , Electron transport layer, electron injection layer and cathode.
  • S203 preparing a thin film packaging layer 205 on the OLED device layer 204, so that the thin film packaging layer 205 completely covers the OLED device layer 204;
  • the plasma enhanced chemical vapor deposition method (Plasma Enhanced Chemical Vapor Deposition, PECVD) for thin film packaging.
  • it may also include sequentially laminating a touch panel 207 and a polarizer 208 on the thin film packaging layer 205.
  • the touch panel 207 can be pasted on the thin film packaging layer 205 through the first OCA optical glue 206
  • the touch panel 207 and the second flexible circuit board 216 are connected to each other.
  • the glass substrate 201 can be peeled off from the base substrate 202 by means of laser peeling.
  • the base substrate 202 is a flexible substrate, after the glass substrate 201 is peeled off from the base substrate 202, the base substrate 202 is easily damaged. Therefore, a protective film 218 can be attached to the side of the base substrate 202 away from the thin film transistor array layer 203.
  • the protective film 218 covers the surface of the base substrate 202 evenly and smoothly, and has a protective layer. The role of the base substrate 202 is described. Since the protective film 218 needs to be torn off in the subsequent manufacturing process, the protective film 218 does not need to be made of high-cost materials, which can reduce production costs.
  • a laser chamfer cutting method can be used to chamfer the base substrate 202, and the cutting accuracy is relatively high.
  • the protective film 218 covers the surface of the base substrate 202 evenly and flatly, when performing laser chamfering, the protective film 218 does not The presence of the air layer prevents the laser from passing through the air layer. Therefore, the ash generated by the laser chamfering cutting method is relatively small, and the influence on the base substrate 202 can be reduced.
  • the cover plate 210 can be bonded to the polarizer 208 through the second OCA optical glue 209.
  • the cover plate 210 may be a 3D cover plate, and the cover plate 210 may be a glass cover plate.
  • the protective film 218 is torn off from the surface of the base substrate 202, so the flexible OLED module stack structure 200 prepared by the method provided in this embodiment does not include the protective film 218, the existing flexible OLED module stack structure includes a backplane, and the thickness of the backplane is usually about 90 um. Therefore, the overall thickness of the flexible OLED module stack structure 200 in this embodiment can be reduced by about 90 um, in line with the current trend of thinner and thinner display screens.
  • the foam layer 211 is attached to the side of the base substrate 202 away from the thin film transistor array layer 203 Since the foam layer 211 can support, protect and protect the base substrate 202, the protective film 218 can be removed without affecting the performance of the base substrate.
  • the foam layer 211 may be composed of foam, copper foil, and graphite. The foam, copper foil, and graphite are arranged in sequence, and between the copper foil and the graphite and between the foam and the copper foil. Both are bonded by double-sided tape. At the same time, the foam layer 211 can also be connected to the base substrate 202 through a double-sided tape.
  • one side of the outer lead reinforcement plate 217 is attached to the surface of the foam layer 211, and the other side is attached to the OLB area of the glass substrate 201 to improve The bending resistance of the entire OLB area.
  • the IC chip 214 is set on the first flexible circuit board 212 to form a COF 214', the COF 214' is attached to the thin film transistor array layer 203, the COF 214' and the thin film transistor array
  • the layer 203 can be bonded by the ACF 213.
  • the protective film 218 does not need to be designed in sections, the bonding difficulty is relatively low, and the flexible OLED module stack structure 200 has removed the protective film 218 from the surface of the base substrate 202 before the bonding pad is bent Tear off, therefore, the protective film 218 will not affect the bending of the bonding pads of the flexible OLED module stack structure. Compared with the existing flexible OLED module stack structure, the process steps are omitted and the production cost is reduced.
  • the flexible OLED module stack structure and the preparation method thereof provided by the present disclosure play the role of protecting the base substrate in the module manufacturing process by replacing the backplane with a protective film, and the protective film is torn off.
  • the protective film is torn off.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本揭示提供一种柔性OLED模组堆叠结构及其制备方法，该结构包括：衬底基板、薄膜晶体管阵列层、OLED器件层、薄膜封装层、盖板、泡棉层，薄膜封装层设置于OLED器件层上并完全覆盖OLED器件层，泡棉层设置于衬底基板远离薄膜晶体管阵列层的一侧，利用保护膜取代背板并撕除、以及泡棉层的支撑缓冲作用，整体厚度减小，产生灰烬较少。

Description

柔性OLED模组堆叠结构及其制备方法 技术领域
本揭示涉及显示技术领域，尤其涉及一种柔性OLED模组堆叠结构及其制备方法。
 背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)显示器是一种极具发展前景的平板显示技术，它具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性。目前OLED显示器得到了各大显示器厂家的青睐，并成为继CRT （Cathode Ray Tube）显示器与液晶显示器（Liquid Crystal Display，LCD)之后的第三代显示器。
然而目前OLED小尺寸产品在模组阶段制作工艺中包括一道背板贴合工艺，而背板仅起到支撑、缓冲，及在柔性OLED模组堆叠结构制作过程中对衬底基板的保护作用。一方面，由于柔性OLED模组堆叠结构需要进行焊盘弯曲，因此该背板需采用两段式结构，使得背板中部为空气层，当进行激光切割时，经过空气层将会产生较多的灰烬。另一方面，该背板结构材料成本较高且易产生贴合气泡，不仅影响外观，而且使得背板贴合难度较大。再者，该背板结构具有一定的厚度，使得柔性OLED模组堆叠结构厚度较大，进而影响到OLED产品的厚度，不符合当下的趋势。
因此，需要提供一种新的柔性OLED模组堆叠结构及其制备方法，来解决上述技术问题。
 技术问题
本揭示提供一种柔性OLED模组堆叠结构及其制备方法，解决了设置于衬底基板上的背板需采用两段式结构，不仅贴合难度大、厚度大，且易产生灰烬的技术问题。
 技术解决方案
为解决上述问题，本揭示提供的技术方案如下：
本揭示提供一种柔性OLED模组堆叠结构，包括：
衬底基板；
薄膜晶体管阵列层，设置于所述衬底基板上；
OLED器件层，设置于所述薄膜晶体管阵列层上；
薄膜封装层，设置于所述OLED器件层上，所述薄膜封装层完全覆盖所述OLED器件层；
盖板，设置于所述薄膜封装层的一端，所述盖板为3D盖板；以及
泡棉层，设置于所述衬底基板远离所述薄膜晶体管阵列层的一侧。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述柔性OLED模组堆叠结构还包括触摸面板，所述触摸面板设置于所述薄膜封装层上。
根据本揭示实施例提供的柔性OLED模组堆叠结构所述柔性OLED模组堆叠结构还包括偏光片，所述偏光片设置于所述触摸面板上。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述薄膜封装层与所述触摸面板、所述偏光片与所述盖板之间利用OCA光学胶进行贴合。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述衬底基板的材料包括聚酰亚胺。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述泡棉层由泡棉、铜箔、石墨组成。
根据本揭示实施例提供的柔性OLED模组堆叠结构，在所述泡棉远离所述衬底基板的一侧设置有外引脚补强板。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述盖板为玻璃盖板。
本揭示实施例提供一种柔性OLED模组堆叠结构，包括：
衬底基板；
薄膜晶体管阵列层，设置于所述衬底基板上；
OLED器件层，设置于所述薄膜晶体管阵列层上；
薄膜封装层，设置于所述OLED器件层上，所述薄膜封装层完全覆盖所述OLED器件层；
盖板，设置于所述薄膜封装层的一端；以及
泡棉层，设置于所述衬底基板远离所述薄膜晶体管阵列层的一侧，用于保护所述衬底基板。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述柔性OLED模组堆叠结构还包括触摸面板，所述触摸面板设置于所述薄膜封装层上。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述柔性OLED模组堆叠结构还包括偏光片，所述偏光片设置于所述触摸面板上。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述薄膜封装层与所述触摸面板、所述偏光片与所述盖板之间利用OCA光学胶进行贴合。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述衬底基板的材料包括聚酰亚胺。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述泡棉层由泡棉、铜箔、石墨组成。
根据本揭示实施例提供的柔性OLED模组堆叠结构，在所述泡棉远离所述衬底基板的一侧设置有外引脚补强板。
根据本揭示实施例提供的柔性OLED模组堆叠结构，所述盖板为玻璃盖板。
本揭示实施例提供一种柔性OLED模组堆叠结构的制作方法，包括以下步骤：
S10：在玻璃基板上涂布聚酰亚胺材料形成衬底基板；
S20：在所述衬底基板上依次制备薄膜晶体管阵列层、OLED器件层、薄膜封装层；
S30：将所述玻璃基板从所述衬底基板上剥离；
S40：在所述衬底基板远离所述薄膜晶体管阵列层的一侧贴合保护膜；
S50：对所述衬底基板进行倒角切割；
S60：在所述衬底基板靠近所述薄膜晶体管阵列层的一侧贴合盖板；
S70：从所述衬底基板上撕除所述保护膜；
S80：在所述衬底基板远离所述薄膜晶体管层的一侧贴合泡棉层；以及
S90：将外引脚补强板及覆晶薄膜贴合在所述泡棉层远离所述衬底基板的一侧之后进行焊盘弯曲。
根据本揭示实施例提供的柔性OLED模组堆叠结构的制作方法，还包括在所述薄膜封装层上依次贴合触摸面板、偏光片。
根据本揭示实施例提供的柔性OLED模组堆叠结构的制作方法，所述步骤S50中采用激光剥离的方法将所述玻璃基板从所述衬底基板上剥离。
根据本揭示实施例提供的柔性OLED模组堆叠结构的制作方法，所述步骤S60中采用激光倒角切割的方法对所述衬底基板进行倒角切割。
 有益效果
本揭示的有益效果为：本揭示提供的柔性OLED模组堆叠结构及其制备方法，通过利用保护膜取代背板在模组制程过程中起到保护衬底基板的作用，并将该保护膜撕除，由于撕除后存在泡棉层，同样可对该衬底基板起到支撑、缓冲及保护的作用。因此，该柔性OLED模组堆叠结构整体厚度减小，贴合难度小，切割过程中产生灰烬较少，从而降低了生产成本。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本揭示实施例一提供的柔性OLED模组堆叠结构的结构示意图；
图2A~2G为本揭示实施例二提供的柔性OLED模组堆叠结构制备方法的示意图；
图3为本揭示实施例二提供的柔性OLED模组堆叠结构制备方法的流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。
本揭示针对现有技术的柔性OLED模组堆叠结构及其制备方法，解决了设置于衬底基板上的背板需采用两段式结构，不仅贴合难度大、厚度大，且易产生灰烬的技术问题。本实施例能够解决该缺陷。
实施例一
如图1所示，本揭示实施例提供一种柔性OLED模组堆叠结构100，所述柔性OLED模组堆叠结构100包括：
衬底基板102；
薄膜晶体管阵列层103，设置于所述衬底基板102上；
OLED器件层104，设置于所述薄膜晶体管阵列层103上；
薄膜封装层105，设置于所述OLED器件层104上，所述薄膜封装层105完全覆盖所述OLED器件层104；
盖板110，设置于所述薄膜封装层105的一端且与所述衬底基板102相互固定；以及
泡棉层111，设置于所述衬底基板102远离所述薄膜晶体管阵列层103的一侧，用于保护所述衬底基板102。
所述衬底基板102的材料选用聚酰亚胺（Polyimide，PI）,耐高温且具有良好的弯折性。所述薄膜晶体管（Thin Film Transistor,TFT）阵列层103由多个呈阵列式排布的TFT组成，所述TFT用作所述柔性OLED模组堆叠结构100的开关器件与驱动器件。同时，在所述薄膜晶体管阵列层103设置有第一柔性电路板112，所述薄膜晶体管阵列层103与所述第一柔性电路板112可通过各向异性导电胶(anisotropic conductive films，ACF)113进行粘合。集成电路(Integrated Circuit，IC)芯片114设置在所述第一柔性电路板112上形成覆晶薄膜（Chip On Film，COF）114＇，所述第一柔性电路板112与印刷电路板（ Printed Circuit Board,PCB）115可通过所述ACF 113进行连接。
所述OLED器件层104，包括依次设置于所述薄膜晶体管阵列层103上方的阳极、空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层与阴极。
可采用薄膜封装的封装方式，其中所述薄膜封装层105主要采用设置于所述OLED器件层104上的阻挡层和缓冲层的叠层结构，所述薄膜封装层105完全覆盖所述OLED器件层104。其中，所述阻挡层起到阻隔水氧的作用，以防止水汽或氧侵入所述OLED器件层104而造成发光变暗；所述缓冲层主要为消除两层所述阻挡层之间的应力、缺口以及空隙等作用。
所述盖板110设置于所述薄膜封装层105的一端且以粘合的方式与所述衬底基板102相互固定，所述盖板110可为3D盖板，所述盖板110可为玻璃盖板。
所述泡棉层111设置于所述衬底基板102远离所述薄膜晶体管阵列层103的一侧，对所述衬底基板102能够起到支撑、能够及保护的作用。所述泡棉层111可由泡棉、铜箔、石墨组成，所述泡棉、铜箔、石墨依次排列，所述铜箔与所述石墨之间以及所述泡棉与所述铜箔之间均通过双面胶带进行粘结。同时，所述泡棉层111也可通过双面胶带与所述衬底基板102进行连接。
在所述泡棉远离所述衬底基板的一侧设置有外引脚补强板117，以增强所述柔性OLED模组堆叠结构100中外引脚贴合 (Outer Lead Bonding,OLB)区的抗弯折性能。
所述柔性OLED模组堆叠结构100还包括触摸面板107，所述触摸面板107设置于所述薄膜封装层105上，所述触摸面板107通过第一光学透明粘合剂（Optically Clear Adhesive，OCA）光学胶106与所述薄膜封装层105进行粘合组装，所述触摸面板107连接有第二柔性电路板116。
所述柔性OLED模组堆叠结构100还包括偏光片108，所述偏光片108的出光/显示的一面与所述触摸面板107贴合在一起，所述偏光片108的另一侧与所述盖板110之间也可利用所述第二OCA光学胶109进行贴合在一起。
实施例二
如图2A~2G、图3所示，本揭示实施例提供一种柔性OLED模组堆叠结构200的制作方法，包括以下步骤：
S10：在玻璃基板201上涂布聚酰亚胺材料形成衬底基板202；
可通过涂布机在所述玻璃基板201上涂布聚酰亚胺材料形成所述衬底基板202，所述衬底基板202可包含有吸水氧性能的材料，以提高所述衬底基板202的阻水氧性能。
S20：在所述衬底基板202上依次制备薄膜晶体管阵列层203、OLED器件层204、薄膜封装层205；具体包括以下步骤：
S201：在所述衬底基板202上制备所述薄膜晶体管阵列层203；
所述薄膜晶体管阵列层203由多个呈阵列式排布的TFT组成，同时，在所述薄膜晶体管阵列层203设置有第一柔性电路板212，所述薄膜晶体管阵列层203与所述第一柔性电路板212可通过所述ACF 213进行粘合，所述第一柔性电路板212与PCB 215连接。
S202：在所述薄膜晶体管阵列层203上制作所述OLED器件层204；
可采用蒸镀方法在所述薄膜晶体管阵列层203上制备所述OLED器件层204，包括依次形成于所述薄膜晶体管阵列层203上方的阳极、空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层与阴极。
S203：在所述OLED器件层204上制备薄膜封装层205，使得所述薄膜封装层205完全覆盖所述OLED器件层204；
可以采用等离子体增强化学气相沉积法（Plasma Enhanced Chemical Vapor Deposition, PECVD）来进行薄膜封装。
同时，还可包括在所述薄膜封装层205上依次贴合触摸面板207、偏光片208，所述触摸面板207可通过第一OCA光学胶206贴合在所述薄膜封装层205上，所述触摸面板207与第二柔性电路板216相互连接。
S30：将所述玻璃基板201从所述衬底基板202上剥离；
如图2B所示，可通过激光剥离的方式将所述玻璃基板201从所述衬底基板202上剥离。
S40：在所述衬底基板202远离所述薄膜晶体管阵列层203的一侧贴合保护膜218；
如图2C所示，由于所述衬底基板202为柔性基板，当所述玻璃基板201从所述衬底基板202上剥离之后，所述衬底基板202易受到损坏。因此，可在所述衬底基板202远离所述薄膜晶体管阵列层203的一侧贴合一层保护膜218，所述保护膜218均匀、平整地覆盖所述衬底基板202表面，具有保护所述衬底基板202的作用。由于后续制程中需要将所述保护膜218进行撕除，因此该保护膜218无需使用高成本的材料制成，可降低生产成本。
S50：对所述衬底基板202进行倒角切割；
可采用激光倒角切割的方法对所述衬底基板202进行倒角切割，切割精度较高。与现有的柔性OLED模组堆叠结构相比，由于所述保护膜218均匀且平整地覆盖在所述衬底基板202的表面，因此在进行激光倒角切割时，由于所述保护膜218不存在空气层，则避免了激光通过空气层，因此通过该激光倒角切割的方法产生的灰烬相对较少，可降低对所述衬底基板202的影响。
S60：在所述衬底基板202靠近所述薄膜晶体管阵列层203的一侧贴合盖板210；
如图2D所示，所述盖板210可通过第二OCA光学胶209与所述偏光片208贴合在一起。所述盖板210可为3D盖板，所述盖板210可为玻璃盖板。
S70：从所述衬底基板202上撕除所述保护膜218；
如图2E所示，将所述保护膜218从所述衬底基板202表面撕除，因此通过本实施例提供的方法制备得到的所述柔性OLED模组堆叠结构200并不包含所述保护膜218，而现有的柔性OLED模组堆叠结构中包含背板，该背板的厚度通常在90 um左右，因此本实施例中的所述柔性OLED模组堆叠结构200的整体厚度可减小约90 um，符合当下显示屏厚度越来越薄的趋势。
S80：在所述衬底基板202远离所述薄膜晶体管阵列层203的一侧贴合泡棉层211；
如图2F所示，从所述衬底基板202上撕除所述保护膜218之后，将所述泡棉层211贴合在所述衬底基板202远离所述薄膜晶体管阵列层203的一侧，由于所述泡棉层211对所述衬底基板202能够起到支撑、能够及保护的作用，因此所述保护膜218可撕除，不影响所述衬底基板的性能。所述泡棉层211可由泡棉、铜箔、石墨组成，所述泡棉、铜箔、石墨依次排列，所述铜箔与所述石墨之间以及所述泡棉与所述铜箔之间均通过双面胶带进行粘结。同时，所述泡棉层211也可通过双面胶带与所述衬底基板202进行连接。
S90：将外引脚补强板217及覆晶薄膜214＇贴合在所述柔性OLED模组堆叠结构200上，之后进行焊盘弯曲。
如图2G所示，将所述外引脚补强板217一侧贴合在所述泡棉层211表面，另一侧即贴合在所述玻璃基板201的所述OLB区内，以提高整个所述OLB区的抗折弯能力。将IC芯片 214设置在所述第一柔性电路板212上即形成COF 214＇，将所述COF 214＇贴合在所述薄膜晶体管阵列层203上，所述COF 214＇与所述薄膜晶体管阵列层203可通过所述ACF 213进行粘合。
由于所述保护膜218无需进行分段设计，贴合难度相对较低，而且所述柔性OLED模组堆叠结构200在进行焊盘弯曲之前已经将所述保护膜218从所述衬底基板202表面撕除，因此所述保护膜218并不会影响所述柔性OLED模组堆叠结构的焊盘弯曲，相比现有的柔性OLED模组堆叠结构，省去了工艺步骤，并降低了生产成本。
有益效果为：本揭示提供的柔性OLED模组堆叠结构及其制备方法，通过利用保护膜取代背板在模组制程过程中起到保护衬底基板的作用，并将该保护膜撕除，由于撕除后存在泡棉层，同样可对该衬底基板起到支撑、缓冲及保护的作用。因此，该柔性OLED模组堆叠结构整体厚度减小，贴合难度小，切割过程中产生灰烬较少，降低了生产成本。
综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种柔性OLED模组堆叠结构，包括：
    衬底基板；
    薄膜晶体管阵列层，设置于所述衬底基板上；
    OLED器件层，设置于所述薄膜晶体管阵列层上；
    薄膜封装层，设置于所述OLED器件层上，所述薄膜封装层完全覆盖所述OLED器件层；
    盖板，设置于所述薄膜封装层的一端，所述盖板为3D盖板；以及
    泡棉层，设置于所述衬底基板远离所述薄膜晶体管阵列层的一侧。
  2. 根据权利要求1所述的柔性OLED模组堆叠结构，其中所述柔性OLED模组堆叠结构还包括触摸面板，所述触摸面板设置于所述薄膜封装层上。
  3. 根据权利要求2所述的柔性OLED模组堆叠结构，其中所述柔性OLED模组堆叠结构还包括偏光片，所述偏光片设置于所述触摸面板上。
  4. 根据权利要求3所述的柔性OLED模组堆叠结构，其中所述薄膜封装层与所述触摸面板、所述偏光片与所述盖板之间利用OCA光学胶进行贴合。
  5. 根据权利要求1所述的柔性OLED模组堆叠结构，其中所述衬底基板的材料包括聚酰亚胺。
  6. 根据权利要求1所述的柔性OLED模组堆叠结构，其中所述泡棉层由泡棉、铜箔、石墨组成。
  7. 根据权利要求6所述的柔性OLED模组堆叠结构，其中在所述泡棉远离所述衬底基板的一侧设置有外引脚补强板。
  8. 根据权利要求1所述的柔性OLED模组堆叠结构，其中所述盖板为玻璃盖板。
  9. 一种柔性OLED模组堆叠结构，包括：
    衬底基板；
    薄膜晶体管阵列层，设置于所述衬底基板上；
    OLED器件层，设置于所述薄膜晶体管阵列层上；
    薄膜封装层，设置于所述OLED器件层上，所述薄膜封装层完全覆盖所述OLED器件层；
    盖板，设置于所述薄膜封装层的一端；以及
    泡棉层，设置于所述衬底基板远离所述薄膜晶体管阵列层的一侧。
  10. 根据权利要求9所述的柔性OLED模组堆叠结构，其中所述柔性OLED模组堆叠结构还包括触摸面板，所述触摸面板设置于所述薄膜封装层上。
  11. 根据权利要求10所述的柔性OLED模组堆叠结构，其中所述柔性OLED模组堆叠结构还包括偏光片，所述偏光片设置于所述触摸面板上。
  12. 根据权利要求11所述的柔性OLED模组堆叠结构，其中所述薄膜封装层与所述触摸面板、所述偏光片与所述盖板之间利用OCA光学胶进行贴合。
  13. 根据权利要求9所述的柔性OLED模组堆叠结构，其中所述衬底基板的材料包括聚酰亚胺。
  14. 根据权利要求9所述的柔性OLED模组堆叠结构，其中所述泡棉层由泡棉、铜箔、石墨组成。
  15. 根据权利要求14所述的柔性OLED模组堆叠结构，其中在所述泡棉远离所述衬底基板的一侧设置有外引脚补强板。
  16. 根据权利要求9所述的柔性OLED模组堆叠结构，其中所述盖板为玻璃盖板。
  17. 一种柔性OLED模组堆叠结构的制作方法，包括以下步骤：
    S10：在玻璃基板上涂布聚酰亚胺材料形成衬底基板；
    S20：在所述衬底基板上依次制备薄膜晶体管阵列层、OLED器件层、薄膜封装层；
    S30：将所述玻璃基板从所述衬底基板上剥离；
    S40：在所述衬底基板远离所述薄膜晶体管阵列层的一侧贴合保护膜；
    S50：对所述衬底基板进行倒角切割；
    S60：在所述衬底基板靠近所述薄膜晶体管阵列层的一侧贴合盖板；
    S70：从所述衬底基板上撕除所述保护膜；
    S80：在所述衬底基板远离所述薄膜晶体管层的一侧贴合泡棉层；以及
    S90：将外引脚补强板及覆晶薄膜贴合在所述泡棉层远离所述衬底基板的一侧之后进行焊盘弯曲。
  18. 如权利要求17所述的柔性OLED模组堆叠结构的制作方法，其中还包括在所述薄膜封装层上依次贴合触摸面板、偏光片。
  19. 如权利要求17所述的柔性OLED模组堆叠结构的制作方法，其中所述步骤S50中采用激光剥离的方法将所述玻璃基板从所述衬底基板上剥离。
  20. 如权利要求17所述的柔性OLED模组堆叠结构的制作方法，其中所述步骤S60中采用激光倒角切割的方法对所述衬底基板进行倒角切割。
PCT/CN2019/082164 2019-02-01 2019-04-11 柔性oled模组堆叠结构及其制备方法 Ceased WO2020155384A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/478,987 US11411189B2 (en) 2019-02-01 2019-04-11 Flexible OLED module stacked structure and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910103183.2 2019-02-01
CN201910103183.2A CN109817684B (zh) 2019-02-01 2019-02-01 柔性oled模组堆叠结构及其制备方法

Publications (1)

Publication Number Publication Date
WO2020155384A1 true WO2020155384A1 (zh) 2020-08-06

Family

ID=66606259

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/082164 Ceased WO2020155384A1 (zh) 2019-02-01 2019-04-11 柔性oled模组堆叠结构及其制备方法

Country Status (3)

Country Link
US (1) US11411189B2 (zh)
CN (1) CN109817684B (zh)
WO (1) WO2020155384A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12082439B2 (en) * 2019-03-12 2024-09-03 Universal Display Corporation Purcell enhancement via Tamm plasmon stack in OLED structures
CN110379322A (zh) * 2019-07-15 2019-10-25 深圳市华星光电半导体显示技术有限公司 显示面板、显示模组及显示装置
US11825687B2 (en) 2019-07-17 2023-11-21 The Regents Of The University Of Michigan Organic light emitting device
CN110444665A (zh) * 2019-08-15 2019-11-12 京东方科技集团股份有限公司 一种柔性基板、其制造方法及显示装置
CN110890480B (zh) * 2019-10-22 2022-05-10 深圳莱宝高科技股份有限公司 一种固态柔性弯折产品的贴合结构和贴合方法
KR20210049326A (ko) 2019-10-25 2021-05-06 엘지디스플레이 주식회사 플렉서블 표시 장치
CN110930880A (zh) * 2019-11-27 2020-03-27 昆山国显光电有限公司 显示模组及显示模组制作方法
CN110828530A (zh) * 2019-11-28 2020-02-21 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法、显示装置
CN111725280A (zh) * 2020-06-11 2020-09-29 武汉华星光电半导体显示技术有限公司 一种柔性oled显示装置及其模组迭层结构的制备方法
CN111739416A (zh) * 2020-06-19 2020-10-02 武汉华星光电半导体显示技术有限公司 显示装置
CN112002227A (zh) * 2020-08-17 2020-11-27 武汉华星光电半导体显示技术有限公司 柔性显示面板及柔性显示设备
CN112038303B (zh) * 2020-08-20 2022-11-01 武汉华星光电半导体显示技术有限公司 柔性显示模组及其制作方法、显示终端
CN112017547A (zh) * 2020-09-28 2020-12-01 京东方科技集团股份有限公司 显示模组堆叠结构及显示装置
KR102827510B1 (ko) 2020-12-24 2025-06-30 엘지디스플레이 주식회사 표시 모듈 및 표시 장치
KR102836941B1 (ko) 2020-12-24 2025-07-21 엘지디스플레이 주식회사 표시 모듈 및 표시 장치
KR102819738B1 (ko) 2020-12-24 2025-06-11 엘지디스플레이 주식회사 표시 모듈 및 표시 장치
CN113793860A (zh) * 2021-07-13 2021-12-14 上海和辉光电股份有限公司 一种改善残影的柔性显示面板及其制备方法
TWI804051B (zh) * 2021-11-15 2023-06-01 大陸商宸美（廈門）光電有限公司 保護組件及觸控模組
CN114093274B (zh) * 2021-12-09 2023-01-24 武汉华星光电半导体显示技术有限公司 显示装置及显示终端
CN119328990A (zh) * 2024-10-16 2025-01-21 无锡市科虹标牌有限公司 一种用于家电装饰件的imc工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050153476A1 (en) * 2004-01-12 2005-07-14 Samsung Electronics Co., Ltd. Flexible display and method of manufacturing the same
CN105355645A (zh) * 2015-11-06 2016-02-24 上海天马微电子有限公司 一种柔性显示面板及其制造方法、显示装置
CN106654063A (zh) * 2016-12-28 2017-05-10 武汉华星光电技术有限公司 柔性oled显示面板的制作方法
CN107705716A (zh) * 2017-10-27 2018-02-16 京东方科技集团股份有限公司 一种oled模组以及显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349969B2 (en) * 2013-02-01 2016-05-24 Lg Display Co., Ltd. Electronic devices with flexible display and method for manufacturing the same
JP2018081768A (ja) * 2016-11-14 2018-05-24 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
WO2018179214A1 (ja) * 2017-03-30 2018-10-04 シャープ株式会社 可撓性表示装置
JP2019061130A (ja) * 2017-09-27 2019-04-18 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
KR102555446B1 (ko) * 2018-04-26 2023-07-13 삼성디스플레이 주식회사 표시 장치
KR102582854B1 (ko) * 2018-07-05 2023-09-26 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN108986670A (zh) * 2018-09-20 2018-12-11 武汉华星光电半导体显示技术有限公司 显示模组及其制作方法
CN109494314B (zh) * 2018-10-16 2020-12-08 武汉华星光电半导体显示技术有限公司 一种柔性oled显示面板及其制备方法
KR102563783B1 (ko) * 2018-11-13 2023-08-04 엘지디스플레이 주식회사 표시장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050153476A1 (en) * 2004-01-12 2005-07-14 Samsung Electronics Co., Ltd. Flexible display and method of manufacturing the same
CN105355645A (zh) * 2015-11-06 2016-02-24 上海天马微电子有限公司 一种柔性显示面板及其制造方法、显示装置
CN106654063A (zh) * 2016-12-28 2017-05-10 武汉华星光电技术有限公司 柔性oled显示面板的制作方法
CN107705716A (zh) * 2017-10-27 2018-02-16 京东方科技集团股份有限公司 一种oled模组以及显示装置

Also Published As

Publication number Publication date
US20210336161A1 (en) 2021-10-28
CN109817684A (zh) 2019-05-28
CN109817684B (zh) 2020-12-04
US11411189B2 (en) 2022-08-09

Similar Documents

Publication Publication Date Title
CN109817684B (zh) 柔性oled模组堆叠结构及其制备方法
US11598983B2 (en) Display device
US11296308B2 (en) Flexible display device manufacturing method and flexible display device
US20230301165A1 (en) Display device and support film structure for display device
WO2022088457A1 (zh) 显示模组
WO2021007998A1 (zh) 显示面板、显示模组及显示装置
CN103247233B (zh) 柔性基板、显示装置及在柔性基板上贴附电子器件的方法
CN109817101B (zh) 一种柔性显示模组和柔性显示屏
WO2018072502A1 (zh) 显示面板和显示装置
CN113035059B (zh) 显示模组
WO2021189542A1 (zh) 显示面板及显示装置
WO2020113779A1 (zh) 柔性触控显示模组
WO2021027194A1 (zh) 一种柔性显示模组及柔性显示装置
CN106887529A (zh) 有机发光显示装置
CN108334241A (zh) 触控偏光结构及柔性显示装置
CN111725280A (zh) 一种柔性oled显示装置及其模组迭层结构的制备方法
WO2016095332A1 (zh) Oled触控显示装置及其制造方法
WO2021035835A1 (zh) 柔性oled显示面板的制备方法及柔性oled显示面板
CN107945665A (zh) 柔性显示屏的贴合方法及柔性显示屏贴合设备
CN110491914A (zh) 柔性发光面板、柔性发光面板的制备方法及显示设备
WO2020103241A1 (zh) 一种oled显示器
CN108767127A (zh) 一种显示面板的制作方法、显示面板及显示装置
CN109802049B (zh) 显示面板及其制备方法、显示装置
CN113488519B (zh) 显示装置及其制作方法
WO2021120351A1 (zh) 一种显示模组及其制备方法及电子装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19913807

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19913807

Country of ref document: EP

Kind code of ref document: A1