WO2020155347A1 - Oled显示屏及其制备方法 - Google Patents

Oled显示屏及其制备方法 Download PDF

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Publication number
WO2020155347A1
WO2020155347A1 PCT/CN2019/079635 CN2019079635W WO2020155347A1 WO 2020155347 A1 WO2020155347 A1 WO 2020155347A1 CN 2019079635 W CN2019079635 W CN 2019079635W WO 2020155347 A1 WO2020155347 A1 WO 2020155347A1
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Prior art keywords
area
opened
display screen
oled display
array substrate
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PCT/CN2019/079635
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English (en)
French (fr)
Inventor
叶剑
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武汉华星光电半导体显示技术有限公司
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Priority to US16/471,810 priority Critical patent/US11362312B2/en
Publication of WO2020155347A1 publication Critical patent/WO2020155347A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display screen and a preparation method thereof.
  • the existing smart phone includes wide upper, lower, left, and right borders 12 on the periphery of the display screen 11, as shown in FIG. 1A. Due to the wider frame area, the overall screen-to-body ratio of the mobile phone is low, which affects the user experience. With the rapid development of smart phones towards full screens, the screen-to-body ratio requirements are getting higher and higher. There is a design scheme such as Notch, which only opens a U-shaped opening 13 on the "forehead" of the phone to reserve space for the front Set the camera, and the rest is the display area 14, as shown in Figure 1B.
  • OLED Organic Light Emitting Diode
  • the light-emitting (EL) device film layer of the OLED display screen is mainly realized by using an open mask (Open Mask) by evaporation.
  • Open Mask defines the vapor deposition area by opening the entire surface in the middle. Therefore, the display area (Active Area) of the OLED display will be vaporized to such as hole injection layer (HIL), hole transport layer (HTL), light-emitting layer (EL), electron transport layer (ETL), electron injection layer (EIL) and other light-emitting functional films, as well as cathode (Cathode), capping layer (Capping Layer), anode modification layer (LiF) and other metals/ Organic/inorganic film layer.
  • HIL hole injection layer
  • HTL hole transport layer
  • EL light-emitting layer
  • ETL electron transport layer
  • EIL electron injection layer
  • other light-emitting functional films as well as cathode (Cathode), capping layer (Capping Layer), anode modification layer (LiF) and other metals
  • TFE Thin Film Encapsulation
  • the purpose of the present invention is to provide an OLED display screen and a preparation method thereof, which can improve the packaging reliability of the film encapsulation at the opening position in the OLED display screen.
  • the present invention provides a method for manufacturing an OLED display screen, which includes the following steps: providing a TFT array substrate, the display area on the TFT array substrate has an area to be opened; The mask plate is spliced in the area to be opened, and the TFT array substrate is vapor-deposited to form each film of the organic light emitting device on the TFT array substrate outside the area to be opened. Layer, wherein a fine metal mask is used to evaporate the light-emitting material of the organic light-emitting device, the fine metal mask does not open holes in the region to be opened, and the splicing boundary is located in the OLED display At the gap position of the pixel circuit of the screen; film packaging the TFT array substrate; and opening the area to be opened.
  • the present invention also provides a method for manufacturing an OLED display screen, which includes the following steps: providing a TFT array substrate, the display area on the TFT array substrate has an area to be opened; by using two halves The open mask is spliced in the area to be opened, and the TFT array substrate is vapor-deposited to form the organic light emitting devices on the TFT array substrate outside the area to be opened. Film layer; film packaging of the TFT array substrate; opening the area to be opened.
  • the present invention also provides an OLED display screen.
  • the preparation method of the OLED display screen includes the following steps: providing a TFT array substrate, the display area of the TFT array substrate has an area to be opened;
  • the TFT array substrate is vapor-deposited by using two half-open masks to splice in the area to be opened, so as to form on the TFT array substrate outside the area to be opened
  • Each film layer of the organic light-emitting device wherein a fine metal mask is used to evaporate the light-emitting material of the organic light-emitting device, and the fine metal mask does not open holes in the region corresponding to the holes to be opened;
  • the array substrate is packaged with a thin film; the area to be opened is opened.
  • the area to be opened in the display area is not vapor-deposited to any light-emitting functional film, cathode, etc., thereby improving the film encapsulation in the area to be opened. Reliability of the package. And a circular hole is opened in the display area corresponding to the camera module, so that the "forehead" of the smart mobile device is further narrowed, which is closer to the full screen than the Notch design, and can achieve a larger screen occupancy ratio.
  • Figure 1A a schematic diagram of the existing smart phone in the outer frame of the display screen
  • Figure 1B a schematic diagram of a U-shaped opening in the display area of an existing smart phone
  • Figure 2 is a flow chart of the method for preparing the OLED display screen of the present invention
  • FIG. 3 is a schematic diagram of the first embodiment of the OLED display screen of the present invention using two half-opening masks for splicing in the area to be opened;
  • FIG. 4 is a schematic diagram of a second embodiment in which the OLED display screen of the present invention uses two half-opening masks for splicing in the area to be opened;
  • FIG. 5 is a schematic diagram of a third embodiment in which the OLED display screen of the present invention uses two half-open masks to splice in the area to be opened;
  • Fig. 6 is a schematic diagram of the OLED display screen of the present invention adopting circular openings in the display area.
  • the "above” or “below” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the OLED display screen of the present invention opens a circular hole in the display area corresponding to the camera module (Camera), thereby further narrowing the "forehead" of the smart mobile device, which is closer to the full screen than the Notch design solution , Can achieve a larger screen-to-body ratio.
  • the preparation method of the OLED display screen of the present invention uses two half-side open masks (Open Mask) to be spliced in the area to be opened, and the TFT array (Array) substrate is vapor-deposited, so that the holes are to be opened.
  • the film layers of the organic light emitting device (EL) are formed on the TFT array substrate outside the area, so as to ensure that the hole injection layer (HIL) in the EL evaporation process is not always vaporized at the area to be opened.
  • FMM Fine Metal Mask
  • Figures 2-5 where Figure 2 is a flow chart of the method for preparing the OLED display screen of the present invention, and Figure 3 is the first implementation of splicing the OLED display screen of the present invention using two half-open masks in the area to be opened.
  • Figure 4 is a schematic diagram of the second embodiment of the OLED display screen of the present invention using two half-opening masks in the area to be opened.
  • Fig. 5 is a schematic diagram of the OLED display screen of the present invention using two half-opening masks
  • the preparation method of the OLED display screen includes the following steps: S21: providing a TFT array substrate, and the display area on the TFT array substrate has an area to be opened; S22: using two half-side open masks in the In the splicing mode of the area to be opened, the TFT array substrate is vapor-deposited to form the film layers of the organic light emitting device on the TFT array substrate outside the area to be opened; S23: The TFT array substrate is packaged with a thin film; S24: the area to be opened is opened.
  • a TFT array substrate is provided, and the display area on the TFT array substrate has an area to be opened.
  • the structure of each film layer on the TFT array substrate except for the film layer of the EL device has been fabricated.
  • the TFT array substrate includes a barrier layer (M/B) and a buffer layer (Buffer) laminated on the substrate in turn. , Active layer (Act), gate insulating layer (GI), gate layer (GE), dielectric insulating layer (ILD), source drain layer (SD), flat layer (PLN), anode (ANO), etc.
  • the present invention does not specifically limit this.
  • the region to be opened on the TFT array substrate is located in the display area, and the corresponding film layer at the region to be opened is removed to form a preliminary opening.
  • the TFT array substrate is vapor-deposited on the TFT array substrate by using two half-opening masks in the area to be opened, so that the TFT outside the area to be opened
  • Fig. 2 and Figs. 3-5 together for forming each layer of the organic light emitting device on the array substrate.
  • the present invention replaces the original open mask with holes on the entire surface of the display area by using two half-side open masks for splicing in the area to be opened.
  • the two half-open masks are spliced in the area to be opened, and the TFT array substrate is vapor-deposited on the various layers of the organic light-emitting device (EL) (including EL functional films such as HIL/HTL/ETL/EIL) Layer, Cathode/ Capping Layer/LiF Such as metal/organic/inorganic film layer), so as to ensure that during the entire EL film evaporation process, the area to be opened is not vaporized to any EL film.
  • EL organic light-emitting device
  • the method of using two half-opening masks in the region to be opened for splicing includes: using two horizontal half-opening masks to splice in half in the region to be opened; or, using two vertical The half-open mask is vertically spliced in the area to be opened; or, two half-open masks with the same preset inclination angle in the area to be opened are used for oblique orientation in the area to be opened Splicing; wherein the width direction of the OLED display screen is defined as horizontal, and the length direction of the OLED display screen is defined as vertical.
  • two half-side open masks are used for splicing in the area to be opened, specifically: two horizontal half-side open masks 31, 32 are used in the
  • the area 30 to be opened is horizontally spliced in half, that is, left and right in half splicing.
  • the width direction of the OLED display screen is defined as horizontal X
  • the length direction of the OLED display screen is defined as longitudinal Y.
  • the spliced boundary 39 is located at the gap position of the pixel circuit of the OLED display screen, so as to prevent the optical and display abnormalities of the OLED display screen due to uneven film thickness at the boundary.
  • two half-side open masks are used for splicing in the area to be opened.
  • two longitudinal half-side open masks 41, 42 are used in the The area 40 to be opened is vertically spliced, that is, the method of upper and lower splicing is adopted.
  • the width direction of the OLED display screen is defined as horizontal X
  • the length direction of the OLED display screen is defined as longitudinal Y.
  • the spliced boundary 49 is located at the gap position of the pixel circuit of the OLED display screen, so as to prevent the optical and display abnormalities of the OLED display screen due to uneven film thickness at the boundary.
  • two half-opening masks are used for splicing in the area to be opened, specifically: the area 59 to be opened has the same preset inclination angle
  • the two half-opening mask plates 51 and 52 of ⁇ are diagonally spliced in the area 59 to be opened, that is, a certain angle is adopted for diagonal splicing.
  • the spliced boundary 59 is located at the gap position of the pixel circuit of the OLED display screen, which can prevent the optical and display abnormalities of the OLED display screen due to uneven film thickness at the boundary.
  • step S22 further includes: using a fine metal mask (FMM) to evaporate the light-emitting material of the organic light-emitting device, wherein the fine metal mask does not open holes in the regions corresponding to the holes to be opened.
  • the R/G/B luminescent material is vapor deposited using a fine metal mask with small holes on the entire surface.
  • the fine metal mask does not open holes in the area corresponding to the hole to be opened, which prevents the corresponding luminescent material from being evaporated to the TFT array. Above, it is ensured that during the evaporation process of each EL film layer, no EL film layer will be evaporated at the area to be opened.
  • an inorganic film layer can be deposited on the TFT array substrate to be packaged through a chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) mask, and the inorganic film layer can be Play the role of blocking water and oxygen.
  • CVD Chemical Vapor Deposition
  • the inorganic film layer can be formed by CVD, or the inorganic film layer can be formed by other methods such as electroless plating, sputtering deposition, physical vapor deposition, etc. The present invention does not specifically limit this.
  • the thin-film packaging of the TFT array substrate can open holes on the entire display area of the OLED display screen through a CVD mask and deposit an inorganic film layer, and dry etching the The inorganic film layer in the area to be opened is removed to prevent subsequent cracks from being cut in the area to be opened, which affects the reliability of the package.
  • the thin-film encapsulation of the TFT array substrate in the present invention can also adopt the method of splicing two half-sided CVD masks in the area to be opened to separately deposit the inorganic film on the TFT array substrate to The thin film packaging of the TFT array substrate is completed and the inorganic film layer is not deposited in the area to be opened.
  • the method of using two half-sided chemical vapor deposition masks for splicing in the area to be opened includes: using two horizontal chemical vapor deposition masks to perform horizontal half-splicing in the area to be opened; or, Two longitudinal chemical vapor deposition mask halves are used for longitudinal splicing in the area to be opened; or, two chemical vapor deposition mask halves with the same preset inclination angle in the area to be opened are used in the place.
  • the area to be opened is diagonally spliced; wherein the width direction of the OLED display screen is defined as horizontal, and the length direction of the OLED display screen is defined as longitudinal.
  • Two halves of the CVD mask are used for splicing in the area to be opened, and inorganic film layers are respectively deposited, so that the area to be opened does not have a corresponding inorganic film layer.
  • the splicing boundary is located at a gap position of the pixel circuit of the OLED display screen.
  • the specific splicing structure can be referred to as shown in Figures 3-5, which will not be repeated here.
  • the opening is a circular opening, that is, a circular opening is opened in the display area corresponding to the camera module (Camera), so that the "forehead" of the smart mobile device is further narrowed, which is more narrow than that of Liu Haiping ( Notch)
  • the design is closer to the full screen, which can achieve a larger screen-to-body ratio.
  • the present invention also provides an OLED display screen made by the above-mentioned preparation method of the OLED display screen.
  • the OLED display screen of the present invention adopts a schematic diagram of circular openings in the display area.
  • the OLED display screen is made by the preparation method described in the item of the present invention.
  • the entire EL of the TFT array substrate of the OLED display screen During the evaporation process of each film layer, the circular opening area is never evaporated to any EL film layer, which improves the packaging reliability of the film package.
  • the position corresponding to the circular opening 61 (below the circular opening 61) is the camera module (Camera), and the rest are the display area 62, which makes the "forehead" of the smart mobile device narrower than that of Liu Haiping ( Notch)
  • the design is closer to the full screen, which can achieve a larger screen-to-body ratio.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明揭露一种OLED显示屏及其制备方法，在整个发光膜层蒸镀过程中，显示区内的待开孔区域处始终不被蒸镀到任何发光功能膜层、阴极等膜层，从而提高薄膜封装在待开孔区域处的封装可靠性。且在显示区内对应摄像模组的位置开设一个圆形孔，从而使智能移动设备的"前额"进一步变窄，更接近全面屏，可以实现更大的屏占比。

Description

OLED显示屏及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示屏及其制备方法。
 背景技术
现有的智能手机在显示屏11外围包括较宽的上下左右边框(Border)12，如图1A所示。由于较宽的边框区的存在，导致手机整体的屏占比偏低，影响用户的使用体验效果。随着智能手机朝着全面屏的方向快速发展，屏占比要求越来越高，出现如刘海屏(Notch)设计方案，仅仅在手机的“前额”开设U形开孔13预留空间给前置摄像头，其余地方均为显示区域14，如图1B所示。
近年来OLED(Organic Light Emitting Diode，有机发光二极管)显示技术的快速发展，推动曲面和柔性显示触控产品迅速进入市场，相关领域技术更新也是日新月异。OLED是指利用有机半导体材料和发光材料在电场驱动下，通过载流子注入和复合导致发光的二极管。
 技术问题
OLED显示屏的发光(EL)器件膜层主要是利用开放掩膜板(Open Mask)采用蒸镀的方式来实现。然而现有的Open Mask为中间整面开孔的方式来限定蒸镀区域，因此，OLED显示屏的显示区( Active Area)内会蒸镀到诸如空穴注入层(HIL)、空穴传输层(HTL)、发光层(EL)、电子传输层(ETL) 以及电子注入层(EIL) 等发光功能膜层以及阴极(Cathode)、覆盖层(Capping Layer)、阳极修饰层(LiF)等金属/有机/无机膜层。
随着显示行业超窄边框和全面屏的市场需求增加，针对该需求的半导体封装技术也不断发展。目前，薄膜封装(Thin Film Encapsulation，以下简称TFE)是OLED显示屏的常用封装技术。然而，由于TFE的封装可靠性要求，在TFE层边缘下方不允许存在由于蒸镀的功能膜层，否则切割后，水汽、氧等会通过切割的断面的有机蒸镀膜层渗透进OLED显示屏内部，影响OLED显示屏封装的可靠性。
因此，如何确保OLED显示屏内开孔位置无EL功能膜层/阴极/TFE层等膜层，提高薄膜封装在OLED显示屏内开孔位置处的封装可靠性，成为亟待解决的问题。
 技术解决方案
本发明的目的在于，提供一种OLED显示屏及其制备方法，可以提高薄膜封装在OLED显示屏内开孔位置处的封装可靠性。
为实现上述目的，本发明提供了一种OLED显示屏的制备方法，包括如下步骤：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域；通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层，其中，采用精细金属掩膜板蒸镀所述有机发光器件的发光材料，所述精细金属掩膜板在对应所述待开孔区域不开孔，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处；对所述TFT阵列基板进行薄膜封装；对所述待开孔区域进行开孔。
为实现上述目的，本发明还提供了一种OLED显示屏的制备方法，包括如下步骤：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域；通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层；对所述TFT阵列基板进行薄膜封装；对所述待开孔区域进行开孔。
为实现上述目的，本发明还提供了一种OLED显示屏，所述OLED显示屏的制备方法包括如下步骤：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域；通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层，其中，采用精细金属掩膜板蒸镀所述有机发光器件的发光材料，所述精细金属掩膜板在对应所述待开孔区域不开孔；对所述TFT阵列基板进行薄膜封装；对所述待开孔区域进行开孔。
 有益效果
本发明OLED显示屏在整个发光膜层蒸镀过程中，显示区内的待开孔区域处始终不被蒸镀到任何发光功能膜层、阴极等膜层，从而提高薄膜封装在待开孔区域处的封装可靠性。且在显示区内对应摄像模组的位置开设一个圆形孔，从而使智能移动设备的“前额”进一步变窄，比刘海屏(Notch)设计方案更接近全面屏，可以实现更大的屏占比。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1A，现有智能手机在显示屏外围边框示意图；
图1B，现有智能手机在显示区内采用U形开孔的示意图；
图2，本发明OLED显示屏的制备方法的流程图；
图3，本发明OLED显示屏采用两个半边开放掩膜板在待开孔区域进行拼接的第一实施例的示意图；
图4，本发明OLED显示屏采用两个半边开放掩膜板在待开孔区域进行拼接的第二实施例的示意图；
图5，本发明OLED显示屏采用两个半边开放掩膜板在待开孔区域进行拼接的第三实施例的示意图；
图6，本发明OLED显示屏在显示区内采用圆形开孔的示意图。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本发明OLED显示屏，在显示区内对应摄像模组(Camera)的位置开设一个圆形孔，从而使智能移动设备的“前额”进一步变窄，比刘海屏(Notch)设计方案更接近全面屏，可以实现更大的屏占比。
本发明OLED显示屏的制备方法，通过采用两个半边开放掩膜板(Open Mask)在待开孔区域拼接的方式，分别对TFT阵列(Array)基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件(EL)的各膜层，从而确保所述待开孔区域处始终不被蒸镀到EL蒸镀制程中的空穴注入层(HIL) /空穴传输层(HTL) /电子传输层(ETL) /电子注入层(EIL) 等功能膜层以及阴极(Cathode)/覆盖层(Capping Layer)/阳极修饰层(LiF)等金属/有机/无机膜层；采用厚度很薄、热膨胀系数小的整面小孔的精细金属掩膜板(Fine Metal Mask，以下简称FMM)作为掩膜板，用来蒸镀OLED显示屏的像元内的发光材料(R/G/B发光材料)，其中，所述精细金属掩膜板在对应所述待开孔区域不开孔，从而阻挡相应发光材料蒸镀到TFT阵列基板上。也即，整个EL膜层蒸镀过程中，待开孔区域处始终不被蒸镀到任何EL/Cathode等膜层，从而提高薄膜封装在待开孔区域处的封装可靠性。
参考图2-5，其中，图2为本发明OLED显示屏的制备方法的流程图，图3为本发明OLED显示屏采用两个半边开放掩膜板在待开孔区域进行拼接的第一实施例的示意图，图4为本发明OLED显示屏采用两个半边开放掩膜板在待开孔区域进行拼接的第二实施例的示意图，图5为本发明OLED显示屏采用两个半边开放掩膜板在待开孔区域进行拼接的第三实施例的示意图。
所述OLED显示屏的制备方法包括如下步骤：S21：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域；S22：通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层；S23：对所述TFT阵列基板进行薄膜封装；S24：对所述待开孔区域进行开孔。
关于步骤S21：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域。所述TFT 阵列基板上除EL器件膜层的各膜层结构已制作好，例如，所述TFT 阵列基板包括依次层叠制作在基板衬底上的阻挡层(M/B)、缓冲层(Buffer)、有源层(Act)、栅绝缘层(GI)、栅极层(GE)、、介电绝缘层(ILD)、源漏极层(SD)、平坦层(PLN)以及阳极(ANO)等，本发明对此不做具体限定。所述TFT阵列基板上的所述待开孔区域位于显示区内，且所述待开孔区域处相应膜层已除去，形成初步开孔。
关于步骤S22：通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层，请一并参考图2以及图3-5。本发明通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式替代原本显示区整面开孔的开放掩膜板。两个半边开放掩膜板在所述待开孔区域进行拼接，分别对所述TFT阵列基板进行蒸镀有机发光器件(EL)的各膜层(包括HIL/HTL/ETL/EIL等EL功能膜层，Cathode/ Capping Layer/LiF 等金属/有机/无机膜层)，从而确保整个EL各膜层蒸镀过程中，待开孔区域处始终不被蒸镀到任何EL膜层。
采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，包括：采用横向两个半边开放掩膜板在所述待开孔区域进行横向对半拼接；或，采用纵向两个半边开放掩膜板在所述待开孔区域进行纵向拼接；或，采用在所述待开孔区域具有相同预设倾斜角度的两个半边开放掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。
如图3所示，在本实施例中，采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，具体为：采用横向两个半边开放掩膜板31、32在所述待开孔区域30进行横向对半拼接，也即采用左右对半拼接的方式。其中，定义所述OLED显示屏的宽度方向为横向X，定义所述OLED显示屏的长度方向为纵向Y。优选的，所述拼接的边界39位于所述OLED显示屏的像素电路的间隙位置处，这样可以防止由于边界处膜层厚度不均匀导致所述OLED显示屏的光学和显示异常。
如图4所示，在本实施例中，采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，具体为：采用纵向两个半边开放掩膜板41、42在所述待开孔区域40进行纵向拼接，也即采用上下拼接的方式。其中，定义所述OLED显示屏的宽度方向为横向X，定义所述OLED显示屏的长度方向为纵向Y。优选的，所述拼接的边界49位于所述OLED显示屏的像素电路的间隙位置处，这样可以防止由于边界处膜层厚度不均匀导致所述OLED显示屏的光学和显示异常。
如图5所示，在本实施例中，采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，具体为：采用在所述待开孔区域59具有相同预设倾斜角度θ的两个半边开放掩膜板51、52在所述待开孔区域59进行斜向拼接，也即采用一定角度斜向拼接的方式。优选的，所述拼接的边界59位于所述OLED显示屏的像素电路的间隙位置处，这样可以防止由于边界处膜层厚度不均匀导致所述OLED显示屏的光学和显示异常。
优选的，步骤S22中进一步包括：采用精细金属掩膜板(FMM)蒸镀所述有机发光器件的发光材料，其中，所述精细金属掩膜板在对应所述待开孔区域不开孔。利用整面小孔的精细金属掩膜版蒸镀R/G/B发光材料，在对应所述待开孔区域所述精细金属掩膜板不开孔，阻挡相应发光材料蒸镀到TFT阵列基本上，确保整个EL各膜层蒸镀过程中，待开孔区域处始终不被蒸镀到任何EL膜层。
关于S23：对所述TFT阵列基板进行薄膜封装；可以通过化学气相沉积 (Chemical Vapor Deposition，以下简称CVD)掩膜板在在待封装的所述TFT阵列基板上沉积无机膜层，无机膜层可以起阻隔水氧的作用。需要说明的是，可以通过CVD的方式形成无机膜层，也可以通过化学镀、溅射沉积、物理气相沉积等其它方式形成无机膜层，本发明对此不进行特殊限定。
具体的，本发明对所述TFT阵列基板进行薄膜封装可以通过CVD掩膜板在所述OLED显示屏的显示区整面开孔并沉积无机膜层，并采用干法刻蚀的方式将所述待开孔区域的所述无机膜层除去，以防止后续在所述待开孔区域进行切割过程中产生裂纹(Crack)，影响封装可靠性。
优选的，本发明对所述TFT阵列基板进行薄膜封装还可以采用两个半边CVD掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行无机膜层沉积，以完成对所述TFT阵列基板的薄膜封装并在所述待开孔区域无所述无机膜层沉积。采用两个半边化学气相沉积掩膜板在所述待开孔区域进行拼接的方式，包括：采用横向两个半边化学气相沉积掩膜板在所述待开孔区域进行横向对半拼接；或，采用纵向两个半边化学气相沉积掩膜板在所述待开孔区域进行纵向拼接；或，采用在所述待开孔区域具有相同预设倾斜角度的两个半边化学气相沉积掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。采用两个半边CVD掩膜版在所述待开孔区域进行拼接的方式，分别沉积无机膜层，从而使得所述待开孔区域无相应的无机膜层。优选的，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处。具体拼接结构可参照图3-5所示，此处不再赘述。
关于S24：对所述待开孔区域进行开孔；可以通过激光切割方式对待开孔区域进行开孔。优选的，所开孔为圆形开孔，也即在显示区内对应摄像模组(Camera)的位置开设一个圆形孔，从而使智能移动设备的“前额”进一步变窄，比刘海屏(Notch)设计方案更接近全面屏，可以实现更大的屏占比。
本发明还提供一种采用上述OLED显示屏的制备方法制成的OLED显示屏。参考图6，本发明OLED显示屏在显示区内采用圆形开孔的示意图，所述OLED显示屏采用本发明项所述的制备方法制成，在所述OLED显示屏的TFT阵列基板整个EL各膜层蒸镀过程中，圆形开孔区域处始终不被蒸镀到任何EL膜层，提高薄膜封装的封装可靠性。对应所述圆形开孔61位置(圆形开孔61下方)为摄像模组(Camera)，，其余地方均为显示区域62，使智能移动设备的“前额”进一步变窄，比刘海屏(Notch)设计方案更接近全面屏，可以实现更大的屏占比。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (20)

  1. 一种OLED显示屏的制备方法，其中，包括如下步骤：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域；通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层，其中，采用精细金属掩膜板蒸镀所述有机发光器件的发光材料，所述精细金属掩膜板在对应所述待开孔区域不开孔，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处；对所述TFT阵列基板进行薄膜封装；对所述待开孔区域进行开孔。
  2. 如权利要求1所述的制备方法，其中，所述拼接的方式包括：采用横向两个半边开放掩膜板在所述待开孔区域进行横向对半拼接；或采用纵向两个半边开放掩膜板在所述待开孔区域进行纵向拼接；或采用在所述待开孔区域具有相同预设倾斜角度的两个半边开放掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。
  3. 如权利要求1所述的制备方法，其中，所述的对所述TFT阵列基板进行薄膜封装，包括：采用化学气相沉积掩膜板在所述OLED显示屏的显示区整面开孔并沉积无机膜层，并采用干法刻蚀的方式将所述待开孔区域的所述无机膜层除去；或采用两个半边化学气相沉积掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行无机膜层沉积，以完成对所述TFT阵列基板的薄膜封装并在所述待开孔区域无所述无机膜层沉积。
  4. 如权利要求3所述的制备方法，其中，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处。
  5. 如权利要求3所述的制备方法，其中，所述拼接的方式包括：采用横向两个半边化学气相沉积掩膜板在所述待开孔区域进行横向对半拼接；或采用纵向两个半边开放掩膜板在所述待开孔区域进行纵向拼接；或采用在所述待开孔区域具有相同预设倾斜角度的两个半边开放掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。
  6. 一种OLED显示屏的制备方法，其中，包括如下步骤：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域；通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层；对所述TFT阵列基板进行薄膜封装；对所述待开孔区域进行开孔。
  7. 如权利要求6所述的制备方法，其中，所述的通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层，进一步包括：采用精细金属掩膜板蒸镀所述有机发光器件的发光材料，其中，所述精细金属掩膜板在对应所述待开孔区域不开孔。
  8. 如权利要求6所述的制备方法，其中，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处。
  9. 如权利要求6所述的制备方法，其中，所述拼接的方式包括：采用横向两个半边开放掩膜板在所述待开孔区域进行横向对半拼接；或采用纵向两个半边开放掩膜板在所述待开孔区域进行纵向拼接；或采用在所述待开孔区域具有相同预设倾斜角度的两个半边开放掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。
  10. 如权利要求6所述的制备方法，其中，所述的对所述TFT阵列基板进行薄膜封装，包括：采用化学气相沉积掩膜板在所述OLED显示屏的显示区整面开孔并沉积无机膜层，并采用干法刻蚀的方式将所述待开孔区域的所述无机膜层除去；或采用两个半边化学气相沉积掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行无机膜层沉积，以完成对所述TFT阵列基板的薄膜封装并在所述待开孔区域无所述无机膜层沉积。
  11. 如权利要求10所述的制备方法，其中，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处。
  12. 如权利要求10所述的制备方法，其中，所述拼接的方式包括：采用横向两个半边化学气相沉积掩膜板在所述待开孔区域进行横向对半拼接；或采用纵向两个半边开放掩膜板在所述待开孔区域进行纵向拼接；或采用在所述待开孔区域具有相同预设倾斜角度的两个半边开放掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。
  13. 一种OLED显示屏，其中，所述OLED显示屏的制备方法包括如下步骤：提供一TFT 阵列基板，所述TFT阵列基板上的显示区内具有待开孔区域；通过采用两个半边开放掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行蒸镀，以在所述待开孔区域之外的所述TFT阵列基板上形成有机发光器件的各膜层，其中，采用精细金属掩膜板蒸镀所述有机发光器件的发光材料，所述精细金属掩膜板在对应所述待开孔区域不开孔；对所述TFT阵列基板进行薄膜封装；对所述待开孔区域进行开孔。
  14. 如权利要求13所述的OLED显示屏，其中，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处。
  15. 如权利要求13所述的OLED显示屏，其中，所述拼接的方式包括：采用横向两个半边开放掩膜板在所述待开孔区域进行横向对半拼接；或采用纵向两个半边开放掩膜板在所述待开孔区域进行纵向拼接；或采用在所述待开孔区域具有相同预设倾斜角度的两个半边开放掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。
  16. 如权利要求13所述的OLED显示屏，其中，所述的对所述TFT阵列基板进行薄膜封装，包括：采用化学气相沉积掩膜板在所述OLED显示屏的显示区整面开孔并沉积无机膜层，并采用干法刻蚀的方式将所述待开孔区域的所述无机膜层除去；或采用两个半边化学气相沉积掩膜板在所述待开孔区域进行拼接的方式，分别对所述TFT阵列基板进行无机膜层沉积，以完成对所述TFT阵列基板的薄膜封装并在所述待开孔区域无所述无机膜层沉积。
  17. 如权利要求16所述的OLED显示屏，其中，所述拼接的边界位于所述OLED显示屏的像素电路的间隙位置处。
  18. 如权利要求16所述的OLED显示屏，其中，所述拼接的方式包括：采用横向两个半边化学气相沉积掩膜板在所述待开孔区域进行横向对半拼接；或采用纵向两个半边开放掩膜板在所述待开孔区域进行纵向拼接；或采用在所述待开孔区域具有相同预设倾斜角度的两个半边开放掩膜板在所述待开孔区域进行斜向拼接；其中，定义所述OLED显示屏的宽度方向为横向，定义所述OLED显示屏的长度方向为纵向。
  19. 如权利要求13所述的OLED显示屏，其中，所述开孔为圆形开孔。
  20. 如权利要求19所述的OLED显示屏，其中，所述圆形开孔位置下方为摄像模组。
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