WO2020147215A1 - 一种像素结构及其显示面板 - Google Patents

一种像素结构及其显示面板 Download PDF

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WO2020147215A1
WO2020147215A1 PCT/CN2019/083778 CN2019083778W WO2020147215A1 WO 2020147215 A1 WO2020147215 A1 WO 2020147215A1 CN 2019083778 W CN2019083778 W CN 2019083778W WO 2020147215 A1 WO2020147215 A1 WO 2020147215A1
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area
pixel structure
slave
driving
driving tfts
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PCT/CN2019/083778
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English (en)
French (fr)
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李辉
刘梦阳
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深圳市华星光电技术有限公司
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Priority to US16/349,267 priority Critical patent/US11119371B2/en
Publication of WO2020147215A1 publication Critical patent/WO2020147215A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix

Definitions

  • the present invention relates to the field of light-emitting display technology, in particular, a pixel structure and a display panel thereof.
  • liquid crystal panels especially large-size liquid crystal panels, may exhibit color shift when viewed at a large viewing angle, and the greater the viewing angle, the more serious the color shift.
  • a low color shift low color shift
  • one of the common solutions is to increase the number of domains of the pixel.
  • a pixel is usually divided into 4 domains, and if a pixel is divided into a main area (Main area) and a slave area (Sub Zone) Two zones, each zone includes 4 domains at the same time, so that a pixel has 8 domains, which can increase the viewing angle and improve the color shift.
  • FIG. 1 it illustrates a common pixel structure in which the pixel is divided into two regions, a main region 10' and a slave region 20', and each region is provided with 4 domains, thereby achieving 8 Domain design.
  • the main area 10' and the slave area 20' of the pixel are both charged by a TFT 30' arranged laterally, and the charging currents of the two are the same, and correspondingly, the voltages of the two are also the same. of.
  • the industry has provided a step-down capacitor (C down capacitor) under the slave zone 20' to store part of the charging current of the slave zone 20', thereby reducing the voltage of the slave zone 20', so that The voltage of the master zone 10' is greater than the voltage of the slave zone 20'.
  • C down capacitor step-down capacitor
  • the pixel structure design of this structure has a problem of low aperture ratio due to more devices and high risk of bright spots. Therefore, it is indeed necessary to develop a new 8-domain pixel structure to overcome the defects in the prior art.
  • One aspect of the present invention is to provide a novel pixel structure, which adopts a novel 8-domain structure design to increase its aperture ratio, thereby reducing the risk of it becoming a bright spot.
  • a pixel structure includes a main area and a slave area respectively provided with 4 domains, wherein the main area is located on the upper part of the slave area, and the main area and the slave area are respectively connected with a driving TFT for current charging.
  • the number of driving TFTs connected to the main area is more than the number of driving TFTs connected to the slave area, so that the voltage of the main area is greater than the voltage of the slave area.
  • the number of driving TFTs connected to the master area is 1 or more more than the number of driving TFTs connected to the slave area.
  • the main region is connected to two driving TFTs.
  • the driving TFTs connected to the main region are adjacent and arranged in parallel with each other.
  • the driving TFTs connected to the master area and the driving TFTs connected to the slave area are arranged in parallel with each other.
  • the slave area is connected to one driving TFT.
  • the driving TFT connected to the main region is arranged vertically. That is, the opening of the first driving TFT faces downward toward the main region.
  • the driving TFT connected to the slave area is arranged vertically. That is, the opening of the second driving TFT faces downward toward the slave area.
  • another aspect of the present invention provides a display panel, which includes a substrate.
  • the pixel structure related to the present invention is provided on the substrate.
  • the present invention relates to a pixel structure and a display panel thereof, wherein the pixel structure adopts a new type of main area and slave area driving TFT structure, so that the number of driving TFTs connected to the main area is more than that of the slave area.
  • the number of driving TFTs so that the voltage obtained by the master region is greater than the voltage of the slave region, so that the prior art involved in the two voltages must be set to reduce the
  • the step-down capacitor of the region voltage correspondingly, not only simplifies the structure of the pixel, but also because there is no need to provide an additional step-down capacitor in the pixel structure, thereby increasing the aperture ratio of the pixel structure, thereby reducing This reduces the risk of the pixel structure becoming a bright spot.
  • FIG. 1 is a schematic structural diagram of a pixel structure involved in the prior art
  • FIG. 2 is a schematic structural diagram of a pixel structure according to an embodiment of the present invention.
  • the present invention provides a pixel structure including a main area and a slave area respectively provided with 4 domains, wherein the main area is located on the upper part of the slave area.
  • the charge current of the master zone and the slave zone are related to the channel width W and channel length L of the driving TFT. If the channel length L can be reduced or the channel width W can be increased, it will obviously increase The current value, and then the voltage value is increased, so that the voltage of the main region is greater than the voltage of the slave region, and the 8-domain structure of the pixel structure can be realized.
  • an embodiment of the present invention introduces a new type of vertically arranged driving TFT structure.
  • the master zone 10 is connected with two vertically arranged driving TFTs 31 for current charging
  • the slave zone 20 is connected with a vertically arranged driving TFT 32 for current charging.
  • the three driving TFTs are adjacent and arranged in parallel with each other.
  • the channel width W is the superposition of the channel widths of the two driving TFTs, which is relative to one driving TFT.
  • the number has been doubled.
  • the driving current of the main region 10 can be significantly increased, thereby increasing the main region 10 Therefore, the 8-domain structure of the pixel structure is realized; at the same time, there is no need to provide additional decompression capacitors involved in the prior art.
  • the number of driving TFTs connected to the main area 10 is only one more than the number of driving TFTs connected to the slave area 20, and the main area 10 can only be connected to two.
  • the driving TFT, and the slave area 20 can only be connected to one driving TFT.
  • the number of driving TFTs connected to the main area 10 and the number of driving TFTs connected to the slave area 20 can be determined according to specific needs and is not limited.
  • the main area 10 may be connected with 3, 4, 5, etc. driving TFTs
  • the slave area 20 may be connected with 2, 3, 4, etc. driving TFTs.
  • the number of the driving TFTs connected to the master area 10 may also be 2, 3, etc. more than the number of driving TFTs connected to the slave area 20.
  • another aspect of the present invention provides a display panel, which includes a substrate.
  • the pixel according to the present invention is provided on the substrate.
  • the present invention relates to a pixel structure and a display panel thereof, wherein the pixel structure adopts a new type of main area and slave area driving TFT structure, so that the number of driving TFTs connected to the main area is more than that of the slave area.
  • the number of driving TFTs so that the voltage obtained by the master region is greater than the voltage of the slave region, so that the prior art involved in the two voltages must be set to reduce the
  • the step-down capacitor of the region voltage correspondingly, not only simplifies the structure of the pixel, but also because there is no need to provide an additional step-down capacitor in the pixel structure, thereby increasing the aperture ratio of the pixel structure, thereby reducing This reduces the risk of the pixel structure becoming a bright spot.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
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Abstract

一种像素结构及显示面板，其中像素结构包括分别设有4个畴的主区（10）和从区（20），其中主区（10）位于从区（20）的上部，主区（10）和从区（20）分别连接有驱动TFT（31，32）进行电流充电。其中主区（10）连接的驱动TFT（31）的数量大于从区（20）连接的驱动TFT（32）的数量，从而使得主区（10）的电压大于从区（20）的电压，像素结构采用8畴结构设计，提高了开口率，进而降低了成为亮点的风险。

Description

一种像素结构及其显示面板 技术领域
本发明涉及发光显示技术领域，尤其是，其中的一种像素结构及其显示面板。
背景技术
已知，液晶面板特别是大尺寸的液晶面板在大视角观看会出现色偏的情况，而且观看角度越大，色偏越严重。
对此，为了提高显示面板的显示视角并同时降低色偏，业界对于大尺寸的显示面板通常会做低色偏(Low color shift)的设计。例如，其中一种常见的解决方案是增加像素的畴(domain)数量，如习知的，一个像素通常会分成4个畴，而如果将一个像素分成主区(Main区)和从区(Sub区)两个区，每一区同时都包括4个畴，如此，也就使得一个像素具有了8个畴，从而可以提高视角，改善色偏情况。
如图1所示，其图示了一种常见的像素结构，其中所述像素分为主区10’和从区20’两个区域，每个区域都设置4个畴，从而实现其8个畴的设计。如图中所示，所述像素的主区10’和从区20’均是通过一个横向设置的TFT30’进行充电，两者的充电电流是一致的，相应的，两者的电压也就是一样的。
而为了实现8畴结构，需要将所述主区10’和从区20’两者的电压关系设置为主区电压大于从区电压，而一般降低电压的方式为降低其电流。对此，业界在所述从区20’下设置了一个降压电容(C down电容)，以存储部分所述从区20’的充电电流，进而降低所述从区20’的电压，从而使得所述主区10’的电压大于所述从区20’的电压。
但由于所述像素结构中增设了降压电容器件，这就使得这种结构的像素结构设计由于器件较多而导致的开口率低，进而亮点风险高的问题。因此，确有必要来开发一种新型的8畴像素结构，以克服现有 技术中的缺陷。
技术问题
本发明的一个方面是提供一种新型的像素结构，其采用新型的8畴结构设计，提高了其开口率，进而降低了其成为亮点的风险。
技术解决方案
本发明采用的技术方案如下：
一种像素结构，包括分别设有4个畴的主区和从区，其中所述主区位于所述从区的上部，所述主区和从区分别连接有驱动TFT进行电流充电。其中所述主区连接的驱动TFT的数量多于所述从区连接的驱动TFT的数量，从而使得所述主区的电压大于所述从区的电压。
进一步的，在不同实施方式中，其中所述主区连接的驱动TFT的数量比所述从区连接的驱动TFT的数量多1个或以上数量。
进一步的，在不同实施方式中，其中所述主区连接2个驱动TFT。
进一步的，在不同实施方式中，其中所述主区连接的驱动TFT相邻并相互平行排列设置。
进一步的，在不同实施方式中，其中所述主区连接的驱动TFT和所述从区连接的驱动TFT，相互间平行排列设置。
进一步的，在不同实施方式中，其中所述从区连接1个驱动TFT。
进一步的，在不同实施方式中，其中所述主区连接的驱动TFT为竖向设置。即，所述第一驱动TFT的开口向下朝向所述主区。
进一步的，在不同实施方式中，其中所述从区连接的驱动TFT为竖向设置。即，所述第二驱动TFT的开口向下朝向所述从区。
进一步的，本发明的又一方面提供了一种显示面板，其包括基板。所述基板上设置有本发明涉及的所述像素结构。
有益效果
本发明涉及的一种像素结构及其显示面板，其中所述像素结构采 用新型的主区、从区驱动TFT结构设置，使具体为所述主区连接的驱动TFT数量多于所述从区连接的驱动TFT数量，从而使得所述主区获得的电压大于所述从区的电压，如此，也就不再需要现有技术中涉及的因两者电压一致而必须设置的用于降低所述从区电压的降压电容，相应的，既简化了所述像素的结构，同时又因为不需在所述像素结构中设置额外的降压电容，从而增加了所述像素结构的开口率，进而降低了所述像素结构成为亮点的风险。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中涉及的一种像素结构的结构示意图；
图2为本发明的一个实施方式涉及的一种像素结构的结构示意图。
图1～2中的附图标记说明如下：
主区     10、10’        从区      20、20’
驱动TFT  31、32、30’    降压电容  40’
本发明的实施方式
以下将结合附图和实施例，对本发明涉及的一种像素结构及其显示面板的技术方案作进一步的详细描述。
本发明提供了一种像素结构，包括分别设有4个畴的主区和从区，其中所述主区位于所述从区的上部。
根据如下所示业界习知的充电电流公式可知
Figure PCTCN2019083778-appb-000001
所述主区、从区的充电电流大小是同其驱动TFT的沟道宽度W和沟道长度L相关的，若是能降低沟道长度L或是增加沟道宽度W的值，则显然会增加电流值，进而增加电压值，使得所述主区的电压大于所述从区的电压，即可实现所述像素结构的8畴结构。
请参阅图2所示，本发明的一个实施方式引入了一种新型的竖向设置的驱动TFT结构。具体为，其中所述主区10连接有两个竖向设置的驱动TFT31进行电流充电，所述从区20连接有一个竖向设置的驱动TFT32以进行电流充电。这3个驱动TFT相邻且相互平行设置。
这其中所述主区10的两个驱动TFT31，由于这两个驱动TFT是相邻并行竖向设置，因此其沟道宽度W为这两个驱动TFT沟道宽度的叠加，相对于一个驱动TFT的沟道宽度而言，增加了1倍数量。如此，在所述驱动TFT沟道长度L不变的情况下，通过增加所述主区10的驱动TFT的数量，则可明显增加所述主区10的驱动电流，进而增加所述主区10的电压，从而实现所述像素结构的8畴结构；同时，也就无需设置现有技术中涉及的额外的减压电容。
进一步的，在不同实施方式中，其中并不限于所述主区10连接的驱动TFT的数量只比所述从区20连接的驱动TFT数量多一个，以及所述主区10只能连接2个驱动TFT，而所述从区20只能连接1个驱动TFT。其中所述主区10连接的驱动TFT的数量以及从区20连接的所述驱动TFT的数量，可随具体需要而定，并无限定。
举例来讲，其中所述主区10可以连接3个、4个、5个等等数量的驱动TFT，而所述从区20可以连接2个、3个、4个等等数量的驱动TFT。且所述主区10连接的所述驱动TFT的数量也可以是比所述从区20连接的驱动TFT的数量多2个、3个等等数量。
进一步的，本发明的又一方面提供了一种显示面板，其包括基板。所述基板上设置有本发明涉及的所述像素。
本发明涉及的一种像素结构及其显示面板，其中所述像素结构采用新型的主区、从区驱动TFT结构设置，使具体为所述主区连接的驱动TFT数量多于所述从区连接的驱动TFT数量，从而使得所述主区获得的电压大于所述从区的电压，如此，也就不再需要现有技术中涉及的因两者电压一致而必须设置的用于降低所述从区电压的降压电容，相应的，既简化了所述像素的结构，同时又因为不需在所述像素结构中设置额外的降压电容，从而增加了所述像素结构的开口率，进而降低了所述像素结构成为亮点的风险。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种像素结构，包括分别设有4个畴的主区和从区，其中所述主区位于所述从区的上部，所述主区和从区分别连接有驱动TFT进行电流充电；
    其中所述主区连接的驱动TFT的数量多于所述从区连接的驱动TFT的数量，从而使得所述主区的电压大于所述从区的电压。
  2. 根据权利要求1所述的像素结构，其中所述主区连接的驱动TFT的数量比所述从区连接的驱动TFT的数量多1个或以上数量。
  3. 根据权利要求1所述的像素结构，其中所述主区连接2个驱动TFT。
  4. 根据权利要求1所述的像素结构，其中所述主区连接的驱动TFT相邻并相互平行排列设置。
  5. 根据权利要求1所述的像素结构，其中所述主区连接的驱动TFT和所述从区连接的驱动TFT，相互间平行排列设置。
  6. 根据权利要求5所述的像素结构，其中所述主区连接的驱动TFT和所述从区连接的驱动TFT，相互间竖向平行排列设置。
  7. 根据权利要求1所述的像素结构，其中所述从区连接1个驱动TFT。
  8. 根据权利要求1所述的像素结构，其中所述主区连接的驱动TFT为竖向设置。
  9. 根据权利要求1所述的像素结构，其中所述从区连接的驱动TFT为竖向设置。
  10. 一种显示面板，包括基板，其中所述基板上设置有根据权利要求1所述的像素结构。
PCT/CN2019/083778 2019-01-15 2019-04-23 一种像素结构及其显示面板 WO2020147215A1 (zh)

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