CN105093740B - 阵列基板、液晶显示面板及其液晶显示装置 - Google Patents

阵列基板、液晶显示面板及其液晶显示装置 Download PDF

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CN105093740B
CN105093740B CN201510470368.9A CN201510470368A CN105093740B CN 105093740 B CN105093740 B CN 105093740B CN 201510470368 A CN201510470368 A CN 201510470368A CN 105093740 B CN105093740 B CN 105093740B
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array substrate
liquid crystal
charge
crystal display
metal layer
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CN105093740A (zh
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黄世帅
陈政鸿
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/784,282 priority patent/US9904121B2/en
Priority to PCT/CN2015/086741 priority patent/WO2017020334A1/zh
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Abstract

本发明提供一种阵列基板，所述阵列基板包括衬底基材以及依次形成于衬底基材上的第一金属层、绝缘层、第二金属层，第一金属层为阵列基板的扫描线或电荷共享线，第二金属层为阵列基板的电荷共享薄膜晶体管的源极或漏极，且第一金属层和第二金属层通过夹持于两者之间的绝缘层绝缘重叠设置以形成阵列基板的电荷共享电容。本发明还提供具有前述阵列基板的液晶显示面板及其液晶显示装置，通过采用所述阵列基板，本发明能够增加像素开口率。

Description

阵列基板、液晶显示面板及其液晶显示装置
技术领域
本发明涉及液晶显示技术领域，具体而言涉及一种阵列基板、液晶显示面板及其液晶显示装置。
背景技术
为了改善液晶显示器(Liquid Crystal Display，LCD)在大视角出现的色偏现象，现有技术采用电荷共享(Charge Sharing)的像素设计，即将像素分为主像素(Main Pixel)区域和次像素(Sub Pixel)区域，在显示时，扫描线充电且电荷共享线关闭，主像素区域和次像素区域充电到相同电位，随后扫描线断电且电荷共享线打开，由于电荷共享电容的作用使得次像素区域的电位低于主像素区域的电位，不同的电位使得两个区域的液晶分子的偏向分布不同，从而改善大视角色偏。然而，形成所述电荷共享电容的一金属层为位于显示区域的公共电极信号线，遮光的金属层会占据显示区域的面积，从而降低像素开口率。
发明内容
有鉴于此，本发明提供一种阵列基板、液晶显示面板及其液晶显示装置，以增加像素开口率。
本发明实施例提供的阵列基板，包括衬底基材以及依次形成于衬底基材上的第一金属层、绝缘层、第二金属层，第一金属层为阵列基板的扫描线或电荷共享线，第二金属层为阵列基板的电荷共享薄膜晶体管的源极和漏极中的一个，且第一金属层和第二金属层通过夹持于两者之间的绝缘层绝缘重叠设置以形成阵列基板的电荷共享电容。
其中，阵列基板划分为多个像素单元，每一像素单元包括主像素区域、次像素区域以及位于两个像素区域之间的走线区域，每一像素单元对应连接一条扫描线和一条电荷共享线，且一条扫描线和一条电荷共享线并排位于走线区域，形成电荷共享电容的第一金属层为阵列基板的电荷共享线。
其中，阵列基板包括沿行方向排列的多条扫描线、多条电荷共享线，第n行像素单元与第n行扫描线电连接，第n行像素单元中的第二金属层与第n行电荷共享线绝缘重叠设置，n为正整数。
其中，阵列基板的像素单元的结构为Tri-gate架构，形成电荷共享电容的第一金属层为扫描线。
其中，阵列基板包括沿行方向排列的多条扫描线，第m行像素单元与第m行扫描线电连接，第m行像素单元中的第二金属层与第m+1行扫描线绝缘重叠设置以形成电荷共享电容，m为正整数。
其中，阵列基板还包括沿列方向排布的多条数据线，第一薄膜晶体管、第一存储电容，以及相互电连接的第二薄膜晶体管、第二存储电容，第一薄膜晶体管的栅极电连接于扫描线、源极电连接于数据线、漏极电连接于第一存储电容的一端，第一存储电容的另一端电连接于一公共电极，第二薄膜晶体管的栅极电连接于扫描线、源极电连接于数据线、漏极电连接于第二存储电容的一端，第二存储电容的另一端电连接于公共电极，电荷共享薄膜晶体管的栅极电连接于电荷共享线，其源极和漏极中的另一个电连接于第二薄膜晶体管的漏极。
其中，形成电荷共享电容的第二金属层通过过孔连接至公共电极。
本发明实施例提供的液晶显示面板，包括上述阵列基板。
本发明实施例提供的液晶显示装置，包括上述液晶显示面板和为液晶显示面板提供光线的光源模组。
本发明实施例的阵列基板、液晶显示面板及其液晶显示装置，将形成电荷共享电容的第二金属层与电荷共享线或扫描线绝缘重叠设置，由于电荷共享线或扫描线原本就位于非显示区域，因此可以避免遮光的第二金属层占据显示区域的面积，从而提高像素开口率。
附图说明
图1是本发明一实施例的液晶显示面板的剖视图；
图2是图1所示液晶显示面板一实施例的像素结构示意图；
图3是图2所示一个像素单元的结构示意图；
图4是图3所示的像素结构的等效电路图；
图5是图1所示阵列基板沿图3所示A-A线的结构剖视图；
图6是本发明的一个Tri-gate架构的像素单元的结构示意图；
图7是沿图6所示B-B线的结构剖视图；
图8是本发明一实施例的液晶显示装置的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明所提供的示例性的实施例的技术方案进行清楚、完整地描述。
图1是本发明一实施例的液晶显示面板的剖视图，图2是图1所示液晶显示面板一实施例的像素结构示意图。结合图1和图2，液晶显示面板10包括相对间隔设置的彩膜基板(Color Filter Substrate，CF基板或彩色滤光片基板)11和阵列基板(Thin FilmTransistor Substrate，TFT基板或薄膜晶体管基板)12以及填充于两者之间的液晶层13，阵列基板12包括沿列方向设置的数多条据线D、沿行方向设置的多条扫描线G以及由多条扫描线G和多条数据线D定义的多个像素单元P。其中，每一像素单元P连接对应的一条数据线D和一条扫描线G，各条扫描线G连接于栅极驱动器21以对各像素单元P提供扫描电压，各条数据线D连接于源极驱动器22以对各像素单元P提供灰阶电压。
鉴于阵列排布的多个像素单元P的结构完全相同，下文以图3所示的位于第n行的一个像素单元30为代表进行描述，n为正整数。
参阅图3所示，像素单元30包括主像素区域(main pixel)31、次像素区域(subpixel)32以及位于主像素区域31和次像素区域32之间的走线区域33，像素单元30分别与位于第n行的一条扫描线Gn和位于第n行的一条电荷共享线(share line)Ln电连接，且所述扫描线Gn和所述电荷共享线Ln并排位于走线区域33内。
图4是图3所示的像素结构的等效电路图。如图4所示，阵列基板12包括电荷共享薄膜晶体管Tcs、电荷共享电容Cst3、第一薄膜晶体管Tmain、第一存储电容Cst1、第一液晶电容Clc1、第二薄膜晶体管Tsub、第二存储电容Cst2、第二液晶电容Clc2，其中：
第一液晶电容Clc1由位于主像素区域31的像素电极、液晶显示面板10的公共电极以及位于两者之间的液晶层13形成；
第二液晶电容Clc2由位于次像素区域32的像素电极、液晶显示面板10的公共电极以及位于两者之间的液晶层13形成；
第一存储电容Cst1由阵列基板12的电荷共享薄膜晶体管Tcs的源极或漏极、位于主像素区域31的液晶显示面板10的公共电极以及位于两者之间的绝缘层形成；
第二存储电容Cst2由阵列基板12的电荷共享薄膜晶体管Tcs的源极或漏极、位于次像素区域32的液晶显示面板10的公共电极以及位于两者之间的绝缘层形成；
第一薄膜晶体管Tmain的栅极电连接于扫描线Gn、源极电连接于数据线D、漏极电连接于第一存储电容Cst1的一端，第一存储电容Cst1的另一端电连接于液晶显示面板10的公共电极；
第二薄膜晶体管Tsub的栅极电连接于扫描线Gn、源极电连接于数据线D、漏极电连接于第二存储电容Cst2的一端，第二存储电容Cst2的另一端电连接于液晶显示面板10的公共电极；
电荷共享薄膜晶体管Tcs的栅极电连接于电荷共享线Ln、源极和漏极中的一个电连接于第二薄膜晶体管Tsub的漏极，源极和漏极中的另一个电连接于电荷共享电容Cst3的一端，电荷共享电容Cst3的另一端电连接于液晶显示面板10的公共电极。
在正常显示时，扫描线Gn接收栅极驱动器21的扫描电压后打开，同时电荷共享扫描线Ln关闭，主像素区域31和次像素区域32充电到相同电位；随后，栅极驱动器21停止提供扫描电压以使扫描线Gn关闭，同时共享扫描线Ln打开，由于电荷共享电容Cst3的作用使得次像素区域32的电位低于主像素区域31的电位，不同的电位使得两个显示区域的液晶分子的偏向分布不同，从而改善大视角色偏。
图5是图1所示阵列基板12沿图3所示A-A线的结构剖视图。如图5所示，采用电荷共享技术的阵列基板12的电荷共享电容Cst3由第一金属层M1和第二金属层M2通过夹持于两者之间的绝缘层123绝缘重叠设置形成，其中第一金属层M1、绝缘层123、第二金属层M2依次形成于阵列基板12的衬底基材121上，第一金属层M1为图4所示的阵列基板12的电荷共享线Ln，第二金属层M2即为图4所示的阵列基板12的电荷共享薄膜晶体管Tcs的源极或漏极，形成电荷共享电容Cst3的第二金属层M2通过过孔连接至液晶显示面板10的公共电极。
再次参阅图3所示，本实施例将形成电荷共享电容Cst3的第二金属层M2与电荷共享线Ln或扫描线Gn绝缘重叠设置，由于电荷共享线Ln或扫描线Gn原本就位于非显示区域，因此可以避免遮光的第二金属层M2占据显示区域的面积，并且每一像素单元P均包括第一金属层M1、绝缘层123、第二金属层M2，因此可以提高像素开口率。
对于阵列基板12的像素单元为Tri-gate架构的情况，以图6所示的位于第m行的像素单元60为代表进行描述，m为正整数。
参阅图6并结合图7所示的剖视图，像素单元60与位于第m行的一条扫描线Gm电连接，在上述实施例的描述基础上但与其不同的是，阵列基板12的电荷共享电容Cst3由第m行像素单元60中的第二金属层M2与第m+1行的扫描线Gm+1绝缘重叠形成，换言之，形成电荷共享电容Cst3的第一金属层M1为扫描线Gm+1而非电荷共享线。
本发明实施例还提供一种如图8所示的液晶显示装置80，该液晶显示装置80包括上述液晶显示面板10以及为液晶显示面板10提供光线的光源模组81，由于该液晶显示装置80也具有阵列基板12的上述设计，因此亦具有相同的有益效果。
在此基础上，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (7)

1.一种阵列基板，其特征在于，包括衬底基材以及依次形成于所述衬底基材上的第一金属层、绝缘层、第二金属层，所述第一金属层为所述阵列基板的电荷共享线且与所述阵列基板的电荷共享薄膜晶体管的栅极电连接，所述第二金属层为所述阵列基板的电荷共享薄膜晶体管的源极和漏极中的一个，且所述第一金属层和所述第二金属层通过夹持于两者之间的所述绝缘层绝缘重叠设置以形成所述阵列基板的电荷共享电容。
2.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板包括沿行方向排布的扫描线，所述阵列基板划分为多个像素单元，每一所述像素单元包括主像素区域、次像素区域以及位于所述两个像素区域之间的走线区域，每一所述像素单元对应连接一条所述扫描线和一条所述电荷共享线，且一条所述扫描线和一条所述电荷共享线并排位于所述走线区域。
3.根据权利要求2所述的阵列基板，其特征在于，所述阵列基板包括沿行方向排列的多条所述扫描线、多条所述电荷共享线，第n行所述像素单元与第n行所述扫描线电连接，所述第n行像素单元中的所述第二金属层与第n行所述电荷共享线绝缘重叠设置，其中所述n为正整数。
4.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括沿列方向排布的多条数据线、沿行方向排布的多条扫描线、第一薄膜晶体管、第一存储电容、以及第二薄膜晶体管、第二存储电容，其中，所述第一薄膜晶体管的栅极电连接于所述扫描线、源极电连接于所述数据线、漏极电连接于所述第一存储电容的一端，所述第一存储电容的另一端电连接于一公共电极，所述第二薄膜晶体管的栅极电连接于所述扫描线、源极电连接于所述数据线、漏极电连接于所述第二存储电容的一端，所述第二存储电容的另一端电连接于所述公共电极，所述电荷共享薄膜晶体管的栅极电连接于所述电荷共享线，其源极和漏极中的另一个电连接于所述第二薄膜晶体管的漏极。
5.根据权利要求4所述的阵列基板，其特征在于，形成所述电荷共享电容的所述第二金属层通过过孔连接至所述公共电极。
6.一种液晶显示面板，其特征在于，所述液晶显示面板包括权利要求1-5任意一项所述的阵列基板。
7.一种液晶显示装置，其特征在于，所述液晶显示装置包括液晶显示面板和为所述液晶显示面板提供光线的光源模组，其特征在于，所述液晶显示面板为权利要求6所述的液晶显示面板。
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