WO2020143483A1 - X射线探测器、x射线探测器制造方法及医用设备 - Google Patents

X射线探测器、x射线探测器制造方法及医用设备 Download PDF

Info

Publication number
WO2020143483A1
WO2020143483A1 PCT/CN2019/129305 CN2019129305W WO2020143483A1 WO 2020143483 A1 WO2020143483 A1 WO 2020143483A1 CN 2019129305 W CN2019129305 W CN 2019129305W WO 2020143483 A1 WO2020143483 A1 WO 2020143483A1
Authority
WO
WIPO (PCT)
Prior art keywords
ray detector
layer
reading device
signal reading
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/129305
Other languages
English (en)
French (fr)
Inventor
卓恩宗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HKC Co Ltd
Original Assignee
HKC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201910035109.1A external-priority patent/CN109841636B/zh
Priority claimed from CN201910031219.0A external-priority patent/CN109768062B/zh
Application filed by HKC Co Ltd filed Critical HKC Co Ltd
Priority to US17/251,007 priority Critical patent/US11398520B2/en
Publication of WO2020143483A1 publication Critical patent/WO2020143483A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present application relates to the field of detectors, and in particular, to an X-ray detector, a method of manufacturing the X-ray detector, and medical equipment having the X-ray detector.
  • X-ray detectors are widely used in medical instruments, such as chest X-ray imaging using X-rays; in the exemplary technology, the photoelectric conversion function of the X-ray detector is mainly completed by the amorphous silicon photosensitive layer, and the X-rays pass through the scintillator ( At present, it is mainly CsI) converted into visible light, and then the visible light is converted into an electrical signal through an amorphous silicon photosensitive layer and the electrical signal is output by a signal reading device (Thin film transistor, TFT for short).
  • a signal reading device Thin film transistor, TFT for short.
  • the structure of amorphous silicon is not stable enough and the light conversion efficiency is low, the light wave range absorbed by the amorphous silicon photosensitive layer is wide, and the light conversion is not sensitive enough, which directly affects the photoelectric conversion efficiency of the X-ray detector.
  • the main purpose of the present application is to provide an X-ray detector, which aims to improve the photoelectric conversion efficiency of the X-ray detector.
  • the X-ray detector includes:
  • a scintillator located on the light-incident side of the X-ray detector and converting X-rays into visible light;
  • a photosensitive layer is located on the light exit side of the scintillator and performs photoelectric conversion on the visible light.
  • the photosensitive layer includes a transparent conductive film and a photoelectric conversion layer, and the transparent conductive film is located between the scintillator and the photoelectric conversion layer ;
  • the photoelectric conversion layer is a uniform porous structure, and the pores are filled with silicon particles;
  • a signal reading device the signal reading device is electrically connected to the photosensitive layer
  • the light blocking member is located between the scintillator and the signal reading device and corresponds to the position of the active layer of the signal reading device, so as to block the incident light of the active layer.
  • the silicon particles are nano silicon.
  • the uniform porous structure is formed of one of silicon nitride, silicon oxycarbide, silicon carbide, or silicon oxynitride.
  • the uniform porous structure is formed of a plurality of silicon nitride, silicon oxycarbide, silicon carbide, or silicon oxynitride.
  • the photosensitive layer is electrically connected to the drain of the signal reading device, and the electrical signal generated by the photosensitive layer is output through the signal reading device.
  • the transparent conductive film is electrically connected to the photoelectric conversion layer.
  • the porous structure is formed of Si x O y .
  • the photosensitive layer and the shading member are vertically stacked between the scintillator and the signal reading device, and the photosensitive layer is located on the light incident side of the shading member.
  • the photosensitive layer and the light shield are arranged side by side between the scintillator and the signal reading device.
  • the photoelectric conversion layer penetrates the insulating protective layer of the signal reading device and is electrically connected to the drain of the signal reading device.
  • the photosensitive layer further includes a P-doped layer and an N-doped layer; the P-doped layer is located on the light incident side of the photosensitive layer and is between the transparent conductive film and the photoelectric conversion layer The N-doped layer is located on the light exit side of the photoelectric conversion layer.
  • the photosensitive layer further includes an insulating medium, and the P-doped layer and the N-doped layer are wrapped in the insulating medium, so that the P-doped layer is insulated from the N-doped layer.
  • the X-ray detector further includes: a protective layer, the protective layer is filled in the gap between the signal reading device and the scintillator to read the light shielding member, the photosensitive layer and the signal The device is isolated from the outside environment.
  • the protective layer is silicon nitride or silicon oxide.
  • the photoelectric conversion layer avoids the insulating protective layer of the thin film transistor, and is electrically connected to the drain of the thin film transistor through a wire.
  • the signal reading device is an array substrate composed of thin film transistors.
  • the scintillator includes cesium iodide.
  • the application also proposes a manufacturing method of the X-ray detector including the following steps:
  • the silane gas is charged into the Si x O y alcohol solution with a porous structure, and at the same time is filled with hydrogen, so that the silane forms elemental silicon particles in the pores of the Si x O y .
  • the silane gas is charged into the Si x O y alcohol solution in a pulse manner.
  • the present application also provides a medical device, the medical device includes an X-ray detector and an imaging device, the imaging device is electrically connected to the signal reading device of the X-ray detector;
  • the X-ray detector includes:
  • a scintillator located on the light-incident side of the X-ray detector and converting X-rays into visible light;
  • a photosensitive layer is located on the light exit side of the scintillator and performs photoelectric conversion on the visible light.
  • the photosensitive layer includes a transparent conductive film and a photoelectric conversion layer, and the transparent conductive film is located between the scintillator and the photoelectric conversion layer ;
  • the photoelectric conversion layer is a uniform porous structure, and the pores are filled with silicon particles;
  • a signal reading device the signal reading device is electrically connected to the photosensitive layer
  • the light blocking member is located between the scintillator and the signal reading device and corresponds to the position of the active layer of the signal reading device, so as to block the incident light of the active layer.
  • the technical solution of the present application replaces the photoelectric conversion layer composed of amorphous silicon in the photosensitive layer of the X-ray detector with a photoelectric conversion layer having a uniform porous structure and filled with silicon particles in the pores, and utilizes the photoelectric conversion layer having a uniform porous structure and the pores
  • the photoelectric conversion layer filled with silicon particles photoelectrically converts visible light, so that the photosensitive layer converts the optical signal into an electrical signal. Because the silicon particles in the uniform porous structure have a uniform size, the absorption of light waves is more stable than amorphous silicon, making the use of X-ray detectors with mesoporous silicon as the photoelectric conversion layer have more sensitive photoelectric conversion performance and higher photoelectric conversion efficiency.
  • FIG. 1 is a schematic structural diagram of an embodiment of a photosensitive layer of this application
  • FIG. 2 is a schematic structural diagram of an embodiment of an X-ray detector of the present application.
  • FIG. 3 is a schematic structural diagram of another embodiment of an X-ray detector of the present application.
  • first, second, etc. are for descriptive purposes only, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features.
  • the features defined as “first” and “second” may include at least one of the features either explicitly or implicitly.
  • the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of those skilled in the art to achieve. When the combination of technical solutions conflicts with each other or cannot be realized, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.
  • the present application proposes an X-ray detector, wherein the X-ray detector includes: a scintillator 10, which is located on the light incident side of the X-ray detector and converts X-rays into visible light Photosensitive layer 80, located on the light emitting side of the scintillator 10, and photoelectric conversion of the visible light, the photosensitive layer 80 includes a transparent conductive film 40 and a photoelectric conversion layer 90, the transparent conductive film 40 is located in the scintillator 10 And the photoelectric conversion layer 90; the photoelectric conversion layer 90 is a uniform porous structure, and the pores are filled with silicon particles 92; signal reading device (not shown in the figure), the signal reading device and the The photosensitive layer 80 is electrically connected; the light blocking member 30 is located between the scintillator 10 and the signal reading device and corresponds to the position of the active layer 70 of the signal reading device to block the incidence of the active layer 70 Light.
  • the X-ray detector includes: a scintillator 10, which is located on the light incident
  • the main component of the scintillator 10 is CsI, and X-rays enter the scintillator 10 from the light-incident side of the scintillator 10, and the scintillator 10 is converted into visible light.
  • the photosensitive layer 80 After the photosensitive layer 80 is exposed by the visible light, the photosensitive layer 80 produces a photoelectric effect and converts the optical signal into an electrical signal. Since the photosensitive layer 80 is electrically connected to the drain 50 of the signal reading device, the electrical signal is output through the signal reading device to realize the photoelectric conversion function of the X-ray detector . Since the signal reading device has an amorphous silicon layer, if visible light enters the signal reading device, the electrical signal transmitted in the signal reading device will change.
  • the signal reading device A light blocking member 30 is provided on the light entrance side of the device, and the light blocking member 30 blocks the light incident on the active layer 70 of the signal reading device, so that the signal reading device only transmits the electrical signal from the photosensitive layer 80 to complete the photosensitive layer 80 Signal reading function.
  • the photoelectric conversion layer 90 has a mesoporous structure, and the mesoporous structure is uniform, and the pores are filled with silicon particles 92 to form a mesoporous silicon layer 60; the uniform porous structure It is formed of Si x O y 91.
  • the mesoporous silicon is formed into a film, the size of the pores is controlled by different surfactants, thereby controlling the size of the silicon particles 92 filled in the pores.
  • the porous structure may be uniform by the SiN x, one kind of SiO x C y, SiC x or SiO x N y or more is formed.
  • the silicon particles 92 are nano silicon.
  • the size of the silicon particles 92 is determined by the size of the holes. The larger the holes, the larger the silicon particles 92 filled in the holes and the longer the light waves absorbed.
  • the uniform pore structure makes the silicon particles 92 filled therein uniform in size, so the absorption of light wavelength is stable and the photoelectric conversion is more sensitive.
  • the transparent conductive film 40 is located between the scintillator 10 and the photoelectric conversion layer 90, and is electrically connected to the mesoporous silicon layer 60, the transparent conductive film 40 is used to apply voltage, and light is incident from the transparent conductive film 40 into the mesoporous silicon layer 60, The mesoporous silicon layer 60 converts electrical signals into optical signals.
  • the photosensitive layer 80 further includes a P-doped layer 61 and an N-doped layer 62; the P-doped layer 61 is located on the light incident side of the mesoporous silicon layer 60 and is on the transparent conductive Between the thin film 40 and the mesoporous silicon layer 60, the N-doped layer 62 is located on the light exit side of the mesoporous silicon layer 60; the photosensitive layer 80 further includes an insulating medium, the P-doped layer 61 and The N-doped layer 62 is wrapped in the insulating medium, so that the P-doped layer 61 and the N-doped layer 62 are insulated.
  • the structure formed by the P-doped layer 61, the mesoporous silicon layer 60 and the N-doped layer 62 functions like a capacitor, preventing electrical signals generated by the photoelectric effect of the mesoporous silicon layer 60 The loss enables the electrical signal to flow to the signal reading device to the greatest extent.
  • the signal reading device is an array substrate composed of a thin film transistor (TFT), and the array substrate transmits the read electrical signal to an external imaging device to complete the output of the electrical signal.
  • TFT thin film transistor
  • the position of the photosensitive layer 80 has two forms, the first is: the photosensitive layer 80 is located between the scintillator 10 and the light blocking member 30, and the second is: the photosensitive layer 80 and the light blocking member 30 are arranged side by side in the blinking Between the body 10 and the signal reading device.
  • the photosensitive layer 80 when the photosensitive layer 80 is located between the scintillator 10 and the light blocking member 30, the mesoporous silicon layer 60 and the drain 50 of the signal reading device are electrically connected by wires, and the electricity generated by the mesoporous silicon layer 60 The signal is read by the signal reading device.
  • This arrangement allows the photosensitive layer 80 to be irradiated with visible light in a large area, is not limited by the signal reading device, and has high photoelectric conversion efficiency.
  • the arrangement of the photosensitive layer 80 between the scintillator 10 and the light shield 30 can reduce the patient's irradiation time under X-rays or reduce the X-ray irradiation intensity, because the X-ray detector It has high photoelectric conversion efficiency and can achieve the same imaging effect, thus reducing the impact of X-rays on patients.
  • the second arrangement form of the photosensitive layer 80 that is, the photosensitive layer 80 and the light shielding member 30 are arranged side by side between the scintillator 10 and the signal reading device; at this time, the mesoporous silicon layer 60 penetrates
  • the insulating protective layer of the signal reading device is electrically connected to the drain 50 of the signal reading device. Since the mesoporous silicon layer 60 is in direct contact with the drain 50 of the signal reading device, the mesoporous silicon layer 60 is generated by the photoelectric effect The electrical signal can directly enter the signal reading device from the drain 50. Therefore, the mesoporous silicon layer 60 can be provided separately, and the P-doped layer 61 and the N-doped layer 62 are not required.
  • the mesoporous silicon layer 60 may not need the P-doped layer 61 and the N-doped layer 62, and independently form the photosensitive layer 80 with the transparent conductive film 40;
  • the impurity layer 61 and the N-doped layer 62 together form a photosensitive layer 80, and perform photoelectric conversion of visible light from the scintillator 10.
  • the manufacturing process of the P-doped layer 61 and the N-doped layer 62 is complicated and expensive, and the form of directly eliminating the P-doped layer 61 and the N-doped layer 62 greatly reduces the production cost of the X-ray detector , Simplifying the process.
  • the photosensitive layer 80 using mesoporous silicon as the photoelectric conversion layer 90 has more sensitive photoelectric conversion performance and higher photoelectric conversion efficiency. Therefore, when this embodiment is applied to an X-ray detector, the X-ray detector has a more sensitive The photoelectric conversion performance, and the photoelectric conversion efficiency is also better than that of X-ray detectors using amorphous silicon diodes for photoelectric conversion.
  • the photosensitive layer 80 further includes an insulating medium surrounding the P-doped layer 61 and the N-doped layer 62, In order to insulate the P-doped layer 61 and the N-doped layer 62.
  • the X-ray detector further includes: a protective layer 20 that fills the gap between the signal reading device and the scintillator 10, and connects the shading member 30 and the photosensitive layer 80 And the signal reading device is isolated from the external environment.
  • the X-ray detector further includes a protective layer 20, which is filled in the signal reading device and the The space between the scintillators 10 is used to isolate the light shielding member 30, the photosensitive layer 80 and the array substrate from the external environment.
  • the protective layer 20 and the insulating layer may be the same substance, such as SiN x , or may be different substances, such as the insulating layer is SiN x , and the protective layer 20 is SiO x , which is insulated
  • the layer and the protective layer 20 are provided separately.
  • the present application also proposes a method for manufacturing an X-ray detector.
  • the method for manufacturing the X-ray detector photoelectric conversion layer 90 includes the following steps: when depositing Si x O y through chemical meteorology, the surfactant in the alcohol solution is controlled The concentration is between 35% and 70%, so that Si x O y forms a uniform porous structure; silane gas is charged into a porous structure of Si x O y alcohol solution, while filling hydrogen gas, so that the silane in Si Elemental silicon particles 92 are formed in the holes of x O y .
  • the silane gas is charged into the Si x O y , SiN x , SiO x C y , SiC x or SiO x N y alcohol solution in a pulse manner.
  • a porous structure of Si x O y 91 is formed in an alcohol solution, and the alcohol solution contains a surfactant to induce Si x O y to form uniform pores Structure, the volatilization of alcohol increases the concentration of the surfactant.
  • concentration of the surfactant is close to 10%
  • Si x O y 91 begins to form a pore structure.
  • the concentration reaches 35%
  • the pores of Si x O y 91 The structure is relatively uniform, and they are closely arranged in a honeycomb shape. This state continues until the surfactant concentration exceeds 70%.
  • Si x O y 91 forms a layered liquid crystal, which is not easy to fill with silicon particles. 92.
  • SiN x , SiO x C y , SiC x or SiO x N y When depositing one or more of SiN x , SiO x C y , SiC x or SiO x N y through chemical meteorology, control the concentration of the surfactant in the alcohol solution to be between 35% and 70%, so that SiN x , SiO x C y , SiC x or SiO x N y one or more forms a uniform porous structure; silane gas is charged into the porous structure of SiN x , SiO x C y , SiC x or SiO x N y alcohol solution while hydrogen gas was filled so that the silane SiN x, SiO x C y, to form elemental silicon particles the holes 64 SiC x or SiO x N y a.
  • x and y are the number of atoms, for example, SiNx may be SiN 2 .
  • the pore size is controlled by different surfactants, for example, P123 makes the size of the pore structure of Si x O y 91 in the range of 5nm ⁇ 7nm, CTAB makes the size of the pore structure of Si x O y 91 in the range of 2.5nm ⁇ 4.5nm Within the range, F127 makes the size of the pore structure of Si x O y 91 in the range of 2.5nm ⁇ 4.5nm; at this time, the silicon particles 92 filled in the pores are also limited to the corresponding size range to achieve the control of the size of the silicon particles 92 the goal of.
  • P123 makes the size of the pore structure of Si x O y 91 in the range of 5nm ⁇ 7nm
  • CTAB makes the size of the pore structure of Si x O y 91 in the range of 2.5nm ⁇ 4.5nm
  • F127 makes the size of the pore structure of Si x O y 91 in the range of 2.5nm ⁇ 4.5nm; at this time, the silicon particles
  • the mesoporous silicon structure can stably absorb light in a specific wavelength range, so mesoporous silicon has a more sensitive response to light than amorphous silicon and Higher efficiency photoelectric conversion efficiency. Understandably, the types of surfactants are not limited to the above three.
  • the silane gas is charged into the Si x O y alcohol solution in a pulsed manner, and simultaneously charged with hydrogen, but the hydrogen is continuously charged so that the silane can enter the pore structure of Si x O y 91, and
  • the oxygen ions and hydroxide ions interact to form silicon particles 92, filling the pore structure of Si x O y 91. 5, in the pore structure of the Si x O y 91, the silicon and Si x O y 91 oxygen ions and hydroxide ions in conjunction with the inner wall, when insufficient number of oxygen ions and hydroxide ions, silicon ions It combines with silicon ions to form silicon particles 92. Therefore, the smaller the concentration of oxygen ions and hydroxide ions, the larger the silicon particles 92.
  • the charging method of hydrogen gas and silane is not limited by the above two, as long as the silane can generate silicon particles 92 in the pore structure of Si x O y 91.
  • the present application also proposes a medical device including the aforementioned X-ray detector and an imaging device, the X-ray detector is electrically connected to the imaging device, and the electrical signal generated by the X-ray detector due to the photoelectric effect forms an image through the imaging device .
  • the photosensitive layer 80 functioning as a photoelectric converter in the X-ray detector has sensitive and efficient photoelectric conversion performance, under the same imaging effect, the X-ray irradiation intensity or irradiation time can be reduced Impact on patients.

Landscapes

  • Measurement Of Radiation (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

一种X射线探测器、X射线探测器的制造方法及一种医用设备，所述X射线探测器包括：闪烁体(10)；感光层(80)，感光层(80)包括透明导电薄膜(40)及光电转换层(90)，透明导电薄膜(40)位于闪烁体(10)与光电转换层(90)之间；光电转换层(90)为均匀的多孔结构，孔内填充有硅颗粒(92)；信号读取装置，信号读取装置与感光层(80)电连接；遮光件(30)，与信号读取装置中有源层(70)的位置对应，以遮挡有源层(70)的入射光。

Description

X射线探测器、X射线探测器制造方法及医用设备
相关申请
本申请要求2019-01-11日申请的，申请号为201910035109.1，名称为“X射线探测器、X射线探测器的制造方法及医用设备”，以及2019-01-11日申请的，申请号为201910031219.0，名称为“一种X射线探测器及具有其的显示设备”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本申请涉及探测器领域，特别涉及一种X射线探测器、X射线探测器的制造方法及具有该X射线探测器的医用设备。
 背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
X射线探测器广泛应用于医疗仪器上，如，利用X射线进行胸透成像；在示例性技术中，X射线探测器的光电转换功能主要由非晶硅感光层完成，X射线经闪烁体（目前主要为CsI）转换成可见光，再经非晶硅感光层将可见光转换成电信号并由信号读取装置（Thin film transistor,简称TFT）将电信号输出。由于非晶硅的结构不够稳定、光转换效率低，导致非晶硅感光层吸收的光波范围较宽，对光的转换不够灵敏，直接影响了X射线探测器的光电转换效率。
 技术解决方案
本申请的主要目的是提供一种X射线探测器，旨在提高X射线探测器的光电转换效率。
为实现上述目的，本发明提出一种X射线探测器，所述X射线探测器包括：
闪烁体，位于所述X射线探测器的入光侧并将X射线转换成可见光；
感光层，位于所述闪烁体的出光侧，并对所述可见光进行光电转换，所述感光层包括透明导电薄膜及光电转换层，所述透明导电薄膜位于闪烁体与所述光电转换层之间；所述光电转换层为均匀的多孔结构，且孔内填充有硅颗粒；
信号读取装置，所述信号读取装置与所述感光层电连接；
遮光件，位于所述闪烁体与信号读取装置之间且与所述信号读取装置有源层的位置对应，以遮挡所述有源层的入射光。
可选地，所述硅颗粒为纳米硅。
可选地，所述均匀的多孔结构由硅的氮化物、硅的碳氧化物、硅的碳化物或硅的氮氧化物中的一种形成。
可选地，所述均匀的多孔结构由硅的氮化物、硅的碳氧化物、硅的碳化物或硅的氮氧化物中的多种形成。
可选地，所述感光层与所述信号读取装置的漏极电连接，所述感光层产生的电信号经信号读取装置输出。
可选地，所述透明导电薄膜与所述光电转换层电连接。
可选地，所述多孔结构由Si xO y形成。
可选地，所述感光层与所述遮光件垂直堆叠于所述闪烁体与信号读取装置之间，且所述感光层位于所述遮光件的入光侧。
可选地，所述感光层及遮光件并排设置于所述闪烁体与所述信号读取装置之间。
可选地，所述光电转换层穿透所述信号读取装置的绝缘保护层与所述信号读取装置的漏极电连接。
可选地，所述感光层还包括P掺杂层与N掺杂层；所述P掺杂层位于所述感光层的入光侧且处于所述透明导电薄膜与所述光电转换层之间，所述N掺杂层位于所述光电转换层的出光侧。
可选地，所述感光层还包括绝缘介质，所述P掺杂层与N掺杂层包裹于所述绝缘介质内，使得P掺杂层与N掺杂层绝缘。
可选地，所述X射线探测器还包括：保护层，所述保护层填充于所述信号读取装置与所述闪烁体之间的空隙，将所述遮光件、感光层及信号读取装置与外界环境隔离。
可选地，所述保护层为硅的氮化物或硅的氧化物。
可选地，所述光电转换层避开所述薄膜晶体管的绝缘保护层，通过导线与所述薄膜晶体管的漏极电连接。
可选地，所述信号读取装置为薄膜晶体管组成的阵列基板。
可选地，所述闪烁体包括碘化铯。
本申请还提出一种所述X射线探测器的制造方法包括如下步骤：
在将Si xO y通过化学气象沉积时，控制酒精溶液中表面活性剂的浓度处于35%~70%之间，使Si xO y形成均匀的多孔结构；
将硅烷气体充入具有多孔结构的Si xO y酒精溶液中，同时充入氢气，使所述硅烷在Si xO y的孔洞内形成单质硅颗粒。
可选地，所述硅烷气体以脉冲的方式充入所述Si xO y酒精溶液中。
本申请还提出一种医用设备，所述医用设备包括X射线探测器及成像装置，所述成像装置与所述X射线探测器的信号读取装置电连接；
所述X射线探测器包括：
闪烁体，位于所述X射线探测器的入光侧并将X射线转换成可见光；
感光层，位于所述闪烁体的出光侧，并对所述可见光进行光电转换，所述感光层包括透明导电薄膜及光电转换层，所述透明导电薄膜位于闪烁体与所述光电转换层之间；所述光电转换层为均匀的多孔结构，且孔内填充有硅颗粒；
信号读取装置，所述信号读取装置与所述感光层电连接；
遮光件，位于所述闪烁体与信号读取装置之间且与所述信号读取装置有源层的位置对应，以遮挡所述有源层的入射光。
本申请技术方案通过将X射线探测器中感光层内的非晶硅构成的光电转换层更换为具有均匀多孔结构且孔内填充有硅颗粒的光电转换层，并利用具有均匀多孔结构且孔内填充有硅颗粒的光电转换层对可见光进行光电转换，使感光层将光信号转换为电信号，由于处于均匀多孔结构内的硅颗粒尺寸均匀，对光波的吸收比非晶硅更加稳定，使得利用介孔硅作为光电转换层的X射线探测器具有更加灵敏的光电转换性能，光电转换效率更高。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本申请感光层一实施例的结构示意图；
图2为本申请X射线探测器的一实施例的结构示意图；
图3为本申请X射线探测器的另一实施例结构示意图；
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明，本申请实施例中所有方向性指示（诸如上、下、左、右、前、后……）仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，在本申请中涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
如图1-3所示，本申请提出一种X射线探测器，其中，所述X射线探测器包括：闪烁体10，位于所述X射线探测器的入光侧并将X射线转换成可见光；感光层80，位于所述闪烁体10的出光侧，并对所述可见光进行光电转换，所述感光层80包括透明导电薄膜40及光电转换层90，所述透明导电薄膜40位于闪烁体10与所述光电转换层90之间；所述光电转换层90为均匀的多孔结构，且孔内填充有硅颗粒92；信号读取装置（图中未标示），所述信号读取装置与所述感光层80电连接；遮光件30，位于所述闪烁体10与信号读取装置之间且与所述信号读取装置有源层70的位置对应，以遮挡所述有源层70的入射光。
在本实施例中，闪烁体10的主要成份为CsI，X射线从闪烁体10的入光侧进入闪烁体10，由闪烁体10转换为可见光，感光层80经所述可见光爆光后，感光层80产生光电效应，将光信号转换为电信号，由于感光层80与信号读取装置的漏极50电连接，所述电信号经信号读取装置输出，实现了X射线探测器的光电转换功能。由于信号读取装置内具有一非晶硅层，若有可见光进入信号读取装置，会导致信号读取装置内传输的电信号发生变化，因此，为了防止可见光进入信号读取装置，在信号读取装置的入光侧设置有遮光件30，遮光件30挡住射向信号读取装置有源层70的光线，使得信号读取装置只传输来自于感光层80的电信号，完成对感光层80的信号读取功能。
如图1所示，在本实施例中，光电转换层90具有介孔结构，且所述介孔结构均匀，孔内填充有硅颗粒92，形成介孔硅层60；所述均匀的多孔结构由Si xO y91形成，在介孔硅成膜时，通过不同的界面活性剂来控制孔的大小，从而控制填充于孔中的硅颗粒92的大小。可以理解的，所述均匀的多孔结构也可以由SiN x、SiO xC y、SiC x或SiO xN y的一种或多种形成。
所述硅颗粒92为纳米硅。硅颗粒92的尺寸由孔的大小决定，孔越大，填充于孔中的硅颗粒92越大，吸收的光波越长。均匀的孔结构使得填充于其内的硅颗粒92大小均匀，因此对光波长的吸收稳定，光电转换也更加灵敏。
其中，透明导电薄膜40位于闪烁体10与光电转换层90之间，与介孔硅层60电连接，透明导电薄膜40用于施加电压，光从透明导电薄膜40射入介孔硅层60，由介孔硅层60将电信号转换成光信号。
作为一种实施例，所述感光层80还包括P掺杂层61与N掺杂层62；所述P掺杂层61位于所述介孔硅层60的入光侧且处于所述透明导电薄膜40与所述介孔硅层60之间，所述N掺杂层62位于所述介孔硅层60的出光侧；所述感光层80还包括绝缘介质，所述P掺杂层61与N掺杂层62包裹于所述绝缘介质内，使得P掺杂层61与N掺杂层62绝缘。
当感光层80与信号读取装置连接时，P掺杂层61、介孔硅层60及N掺杂层62形成的结构其作用类似于电容，防止介孔硅层60光电效应产生的电信号流失，使得所述电信号能够最大程度地流向信号读取装置。在本实施例中，所述信号读取装置为由薄膜晶体管（Thin film transistor,简称TFT）组成的阵列基板，阵列基板将读取的电信号传送至外接显像设备，完成电信号的输出。
感光层80的位置具有两种设置形式，第一种为：感光层80位于所述闪烁体10与所述遮光件30之间，第二种为：感光层80及遮光件30并排设置于闪烁体10与所述信号读取装置之间。
如图2所示，当感光层80位于闪烁体10与遮光件30之间时，介孔硅层60与信号读取装置漏极50之间通过导线电连接，介孔硅层60产生的电信号通过信号读取装置读取。这种设置形式使得感光层80能够大面积地接受可见光照射，不受信号读取装置的限制，具有很高的光电转换效率。当X射线探测器应用于医用设备时，感光层80位于闪烁体10与遮光件30之间的设置形式可以减少病人在X射线下的照射时间或降低X射线的照射强度，由于X射线探测器具有很高的光电转换效率，可以达到同样的成像效果，因此降低了X射线对病人的影响。
如图3所示，感光层80的第二种设置形式：即，感光层80及遮光件30并排设置于闪烁体10与所述信号读取装置之间；此时，介孔硅层60穿透信号读取装置的绝缘保护层与所述信号读取装置的漏极50电连接，由于介孔硅层60与信号读取装置的漏极50直接接触，介孔硅层60光电效应产生的电信号可以直接从漏极50进入信号读取装置，因此，介孔硅层60可以单独设置，不需要P掺杂层61与N掺杂层62。
在感光层80的上述两种设置形式中，介孔硅层60均可不需要P掺杂层61与N掺杂层62，独立与透明导电薄膜40形成感光层80；也可均包含有P掺杂层61与N掺杂层62共同形成感光层80，对来自闪烁体10的可见光进行光电转换。在实际生产中，P掺杂层61与N掺杂层62的制作流程复杂，价格昂贵，直接省去P掺杂层61与N掺杂层62的形式大大降低了X射线探测器的生产成本，简化了工艺流程。
利用介孔硅作为光电转换层90的感光层80具有更加灵敏的光电转换性能，且光电转换效率更高，因此，将本实施例应用于X射线探测器时，X射线探测器具有更加灵敏的光电转换性能，且光电转换效率也优于利用非晶硅二极管进行光电转换的X射线探测器。
为了防止在制造的过程中P掺杂层61与N掺杂层62通电，造成制作失败，所述感光层80还包括包绕所述P掺杂层61与N掺杂层62的绝缘介质，以使所述P掺杂层61与N掺杂层62绝缘。
进一步地，所述X射线探测器还包括：保护层20，所述保护层20填充于所述信号读取装置与所述闪烁体10之间的空隙，将所述遮光件30、感光层80及信号读取装置与外界环境隔离。
为了防止电信号流失，X射线探测器的各元件需要严格地与外界环境隔绝，因此，所述X射线探测器还包括保护层20，所述保护层20填充于所述信号读取装置与所述闪烁体10之间的空隙，以将所述遮光件30、感光层80及阵列基板与外界环境隔离。
在一实施例中，所述保护层20与所述绝缘层可为同一种物质，如SiN x，也可为不同物质，如绝缘层为SiN x，而保护层20为SiO x，此时绝缘层与保护层20分开设置。
本申请还提出一种X射线探测器的制造方法，所述X射线探测器光电转换层90的制作方法包括如下步骤：在将Si xO y通过化学气象沉积时，控制酒精溶液中表面活性剂的浓度处于35%~70%之间，使Si xO y形成均匀的多孔结构；将硅烷气体充入具有多孔结构的Si xO y酒精溶液中，同时充入氢气，使所述硅烷在Si xO y的孔洞内形成单质硅颗粒92。
具体地，所述硅烷气体以脉冲的方式充入所述Si xO y、SiN x、SiO xC y、SiC x或SiO xN y酒精溶液中。
如图4所示，在本实施例中，以Si xO y91为例，Si xO y91多孔结构在酒精溶液中形成，酒精溶液中含有表面活性剂诱导Si xO y形成均匀的孔结构，酒精的挥发使表面活性剂的浓度升高，当表面活性剂的浓度接近10%时，Si xO y91开始形成孔状结构，当浓度达到35%以后，Si xO y91的孔结构相对均匀，且相互间紧密排列成蜂窝状，这种状态一直持续到表面活性剂的浓度超过70%，当浓度超过70%后，Si xO y91形成层状液晶，不便于填充硅颗粒92。
在将SiN x、SiO xC y、SiC x或SiO xN y的一种或多种通过化学气象沉积时，控制酒精溶液中表面活性剂的浓度处于35%~70%之间，使SiN x、SiO xC y、SiC x或SiO xN y的一种或多种形成均匀的多孔结构；将硅烷气体充入具有多孔结构的SiN x、SiO xC y、SiC x或SiO xN y酒精溶液中，同时充入氢气，使所述硅烷SiN x、SiO xC y、SiC x或SiO xN y的孔洞内形成单质硅颗粒64。其中，x,y为原子数量，如SiNx可以为SiN 2。
孔的大小由不同的表面活性剂控制，如，P123使Si xO y91的孔结构的尺寸处于5nm~7nm范围内，CTAB使Si xO y91的孔结构的尺寸处于2.5nm~4.5nm范围内，F127使Si xO y91的孔结构的尺寸处于2.5nm~4.5nm范围内；此时，填充于孔内的硅颗粒92亦限制在对应的尺寸范围内，达到控制硅颗粒92大小的目的。由于固定尺寸的硅颗粒92只能吸收特定波长的光，使得介孔硅结构能够稳定地吸收波长在特定范围内的光，因此介孔硅相较于非晶硅对光具有更灵敏的反应和更高效率的光电转换效率。可以理解的，表面活性剂的种类并不仅限于上述三种。
在一实施例中，硅烷气体以脉冲的方式充入Si xO y酒精溶液中，同时充入氢气，但氢气持续充入，以使硅烷能够进入Si xO y91的孔结构内，与其中的氧离子及氢氧离子相互作用形成硅颗粒92，填充于Si xO y91的孔结构中。如图5所示，在Si xO y91的孔结构中，硅与Si xO y 91内壁上的氧离子与氢氧离子结合，当氧离子与氢氧离子的数量不足时，硅离子会与硅离子结合，形成硅颗粒92，因此，氧离子与氢氧离子的浓度越小，硅颗粒92越大。
可以理解的，氢气与硅烷的充入方式并不受上述两种的限制，只要能够实现硅烷在Si xO y91的孔结构中生成硅颗粒92即可。
本申请还提出一种医用设备，该医用设备包括前述X射线探测器及成像装置，所述X射线探测器与成像装置电连接，X射线探测器因光电效应产生的电信号经成像装置形成影像。
在本实施例中，由于X射线探测器内起光电转换功能的感光层80具有灵敏且高效的光电转换性能，因此，在同样的成像效果下，可以降低X射线的照射强度或照射时间，减少对病人的影响。
以上所述仅为本申请的可选实施例，并非因此限制本申请的专利范围，凡是在本申请的构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。

Claims (20)

  1. 一种X射线探测器，其中，所述X射线探测器包括：
    闪烁体，位于所述X射线探测器的入光侧并将X射线转换成可见光；
    感光层，位于所述闪烁体的出光侧，并对所述可见光进行光电转换，所述感光层包括透明导电薄膜及光电转换层，所述透明导电薄膜位于闪烁体与所述光电转换层之间；所述光电转换层为均匀的多孔结构，且孔内填充有硅颗粒；
    信号读取装置，所述信号读取装置与所述感光层电连接；以及
    遮光件，位于所述闪烁体与信号读取装置之间且与所述信号读取装置有源层的位置对应，以遮挡所述有源层的入射光。
  2. 根据权利要求1所述的X射线探测器，其中，所述硅颗粒为纳米硅。
  3. 根据权利要求1所述的X射线探测器，其中，所述均匀的多孔结构由硅的氮化物、硅的碳氧化物、硅的碳化物或硅的氮氧化物中的一种形成。
  4. 根据权利要求1所述的X射线探测器，其中，所述均匀的多孔结构由硅的氮化物、硅的碳氧化物、硅的碳化物或硅的氮氧化物中的多种形成。
  5. 根据权利要求1所述的X射线探测器，其中，所述感光层与所述信号读取装置的漏极电连接，所述感光层产生的电信号经信号读取装置输出。
  6. 根据权利要求1所述的X射线探测器，其中，所述透明导电薄膜与所述光电转换层电连接。
  7. 根据权利要求1所述的X射线探测器，其中，所述多孔结构由Si xO y形成。
  8. 根据权利要求1所述的X射线探测器，其中，所述感光层与所述遮光件垂直堆叠于所述闪烁体与信号读取装置之间，且所述感光层位于所述遮光件的入光侧。
  9. 根据权利要求1所述的X射线探测器，其中，所述感光层及遮光件并排设置于所述闪烁体与所述信号读取装置之间。
  10. 根据权利要求8所述的X射线探测器，其中，所述光电转换层穿透所述信号读取装置的绝缘保护层与所述信号读取装置的漏极电连接。
  11. 根据权利要求1所述的X射线探测器，其中，所述感光层还包括P掺杂层与N掺杂层；所述P掺杂层位于所述感光层的入光侧且处于所述透明导电薄膜与所述光电转换层之间，所述N掺杂层位于所述光电转换层的出光侧。
  12. 根据权利要求11所述的X射线探测器，其中，所述感光层还包括绝缘介质，所述P掺杂层与N掺杂层包裹于所述绝缘介质内，使得P掺杂层与N掺杂层绝缘。
  13. 根据权利要求1所述的X射线探测器，其中，所述X射线探测器还包括：保护层，所述保护层填充于所述信号读取装置与所述闪烁体之间的空隙，将所述遮光件、感光层及信号读取装置与外界环境隔离。
  14. 根据权利要求11所述的X射线探测器，其中，所述保护层为硅的氮化物或硅的氧化物。
  15. 根据权利要求1所述的X射线探测器，其中，所述光电转换层避开所述薄膜晶体管的绝缘保护层，通过导线与所述薄膜晶体管的漏极电连接。
  16. 根据权利要求1所述的X射线探测器，其中，所述信号读取装置为薄膜晶体管组成的阵列基板。
  17. 根据权利要求1所述的X射线探测器，其中，所述闪烁体包括碘化铯。
  18. 一种X射线探测器的制造方法，其中，所述X射线探测器的制造方法包括如下步骤：
    在将Si xO y通过化学气象沉积时，控制酒精溶液中表面活性剂的浓度处于35%~70%之间，使Si xO y形成均匀的多孔结构；以及
    将硅烷气体充入具有多孔结构的Si xO y酒精溶液中，同时充入氢气，使所述硅烷在Si xO y的孔洞内形成单质硅颗粒。
  19. 根据权利要求18所述的X射线探测器的制造方法，其中，所述硅烷气体以脉冲的方式充入所述Si xO y酒精溶液中。
  20. 一种医用设备，其中，所述医用设备包括X射线探测器及成像装置，所述成像装置与所述X射线探测器的信号读取装置电连接；
    所述X射线探测器包括：
    闪烁体，位于所述X射线探测器的入光侧并将X射线转换成可见光；
    感光层，位于所述闪烁体的出光侧，并对所述可见光进行光电转换，所述感光层包括透明导电薄膜及光电转换层，所述透明导电薄膜位于闪烁体与所述光电转换层之间；所述光电转换层为均匀的多孔结构，且孔内填充有硅颗粒；
    信号读取装置，所述信号读取装置与所述感光层电连接；以及
    遮光件，位于所述闪烁体与信号读取装置之间且与所述信号读取装置有源层的位置对应，以遮挡所述有源层的入射光。
PCT/CN2019/129305 2019-01-11 2019-12-27 X射线探测器、x射线探测器制造方法及医用设备 Ceased WO2020143483A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/251,007 US11398520B2 (en) 2019-01-11 2019-12-27 X-ray detector, method for manufacturing x-ray detector, and medical equipment

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201910031219.0 2019-01-11
CN201910035109.1A CN109841636B (zh) 2019-01-11 2019-01-11 X射线探测器、x射线探测器光电转换层的制造方法及医用设备
CN201910035109.1 2019-01-11
CN201910031219.0A CN109768062B (zh) 2019-01-11 2019-01-11 一种x射线探测器及具有其的显示设备

Publications (1)

Publication Number Publication Date
WO2020143483A1 true WO2020143483A1 (zh) 2020-07-16

Family

ID=71520256

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/129305 Ceased WO2020143483A1 (zh) 2019-01-11 2019-12-27 X射线探测器、x射线探测器制造方法及医用设备

Country Status (2)

Country Link
US (1) US11398520B2 (zh)
WO (1) WO2020143483A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1422310A (zh) * 2000-04-04 2003-06-04 旭化成株式会社 用于制备绝缘薄膜的涂料组合物
CN101221995A (zh) * 2008-01-23 2008-07-16 中国电子科技集团公司第四十四研究所 多层敏感膜光腔结构肖特基势垒红外探测器
CN108735834A (zh) * 2017-04-18 2018-11-02 京东方科技集团股份有限公司 一种光电二极管、x射线探测基板及其制作方法
CN109768062A (zh) * 2019-01-11 2019-05-17 惠科股份有限公司 一种x射线探测器及具有其的显示设备
CN109841636A (zh) * 2019-01-11 2019-06-04 惠科股份有限公司 X射线探测器、x射线探测器光电转换层的制造方法及医用设备

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0998970A (ja) * 1995-10-06 1997-04-15 Canon Inc Ｘ線撮像装置
JP3957803B2 (ja) * 1996-02-22 2007-08-15 キヤノン株式会社 光電変換装置
US6534007B1 (en) * 1997-08-01 2003-03-18 Applied Komatsu Technology, Inc. Method and apparatus for detecting the endpoint of a chamber cleaning
JP4011734B2 (ja) * 1998-06-02 2007-11-21 キヤノン株式会社 ２次元光センサ、それを用いた放射線検出装置及び放射線診断システム
WO2000039028A1 (en) 1998-12-23 2000-07-06 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
US6847041B2 (en) * 2001-02-09 2005-01-25 Canon Kabushiki Kaisha Scintillator panel, radiation detector and manufacture methods thereof
JP4886245B2 (ja) * 2005-08-26 2012-02-29 株式会社東芝 放射線検出器
US7569832B2 (en) * 2006-07-14 2009-08-04 Carestream Health, Inc. Dual-screen digital radiographic imaging detector array
JP2008215951A (ja) * 2007-03-01 2008-09-18 Toshiba Corp 放射線検出器
KR101350795B1 (ko) * 2007-06-11 2014-01-10 삼성디스플레이 주식회사 엑스레이 검출기용 박막 트랜지스터 어레이
US20090084961A1 (en) * 2007-09-28 2009-04-02 Junichi Tonotani Radiation detector
JP2010225735A (ja) * 2009-03-23 2010-10-07 Mitsubishi Electric Corp フォトセンサー及びその製造方法
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
US9075150B2 (en) * 2009-07-30 2015-07-07 Carestream Health, Inc. Radiographic detector formed on scintillator
JP5791281B2 (ja) * 2010-02-18 2015-10-07 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP5844545B2 (ja) * 2010-05-31 2016-01-20 富士フイルム株式会社 放射線撮影装置
KR20120027708A (ko) * 2010-09-13 2012-03-22 삼성모바일디스플레이주식회사 Ｘ-선 검출기 패널
JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
US8772728B2 (en) * 2010-12-31 2014-07-08 Carestream Health, Inc. Apparatus and methods for high performance radiographic imaging array including reflective capability
KR101257699B1 (ko) * 2011-02-07 2013-04-24 삼성전자주식회사 방사선 디텍터 및 그 제조방법
JP2012177623A (ja) 2011-02-25 2012-09-13 Fujifilm Corp 放射線画像検出装置、及び放射線画像検出装置の製造方法
JP2012247281A (ja) * 2011-05-27 2012-12-13 Fujifilm Corp 放射線撮影装置、及びシンチレータとその製造方法
WO2013130038A1 (en) * 2012-02-28 2013-09-06 Carestream Health, Inc. Radiographic detector arrays including scintillators and methods for same
CN102628710A (zh) 2012-04-28 2012-08-08 常州大学 多孔纳米硅可见光探测器及其制备方法
JP2014003183A (ja) * 2012-06-19 2014-01-09 Canon Inc 検出装置及び放射線検出システム
JP2014081358A (ja) * 2012-09-27 2014-05-08 Fujifilm Corp 放射線画像検出装置
JP5906162B2 (ja) * 2012-09-27 2016-04-20 富士フイルム株式会社 放射線画像検出装置
JP6099035B2 (ja) * 2012-10-12 2017-03-22 Ｎｌｔテクノロジー株式会社 光電変換装置及びその製造方法並びにｘ線画像検出装置
KR101964891B1 (ko) * 2013-01-28 2019-08-07 삼성전자주식회사 실리콘 광증배관 디텍터 셀
TWI612321B (zh) * 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 成像裝置
JP6186748B2 (ja) * 2013-02-28 2017-08-30 コニカミノルタ株式会社 シンチレータパネル
JP6314984B2 (ja) * 2013-07-04 2018-04-25 コニカミノルタ株式会社 シンチレータパネル及びその製造方法
CN104377257B (zh) 2013-09-05 2017-03-01 国家纳米科学中心 一种硅基锗量子点复合结构材料、其制备方法及应用
EP3073493A4 (en) * 2013-11-20 2017-07-05 Toray Industries, Inc. Scintillator panel
US20160013243A1 (en) * 2014-03-10 2016-01-14 Dpix, Llc Photosensor arrays for detection of radiation and process for the preparation thereof
US9985061B2 (en) * 2014-03-20 2018-05-29 Sharp Kabushiki Kaisha Light detection device with integrated photodiode and thin film transistor
CN103979487B (zh) 2014-06-03 2015-06-17 盐城工学院 一种掺杂多孔硅球的制备方法
WO2015186657A1 (ja) * 2014-06-06 2015-12-10 シャープ株式会社 半導体装置およびその製造方法
US10353082B2 (en) * 2014-06-30 2019-07-16 Sharp Kabushiki Kaisha Imaging panel and X-ray imaging device
US20170160403A1 (en) * 2014-06-30 2017-06-08 Sharp Kabushiki Kaisha Imaging panel and x-ray imaging device provided therewith
US10347687B2 (en) * 2014-06-30 2019-07-09 Sharp Kabushiki Kaisha Imaging panel and X-ray imaging system provided with said imaging panel
WO2016002562A1 (ja) * 2014-06-30 2016-01-07 シャープ株式会社 撮像パネル及びｘ線撮像装置
US20170236856A1 (en) * 2014-08-05 2017-08-17 Sharp Kabushiki Kaisha Imaging panel, method of producing imaging panel, and x-ray imaging device
CN106539588A (zh) 2016-10-11 2017-03-29 奕瑞影像科技（太仓）有限公司 一种x射线平板探测器及系统
CN106653789A (zh) 2017-01-04 2017-05-10 京东方科技集团股份有限公司 X射线探测器及其制造方法
CN107623011A (zh) 2017-10-12 2018-01-23 友达光电股份有限公司 用于x射线探测器的薄膜晶体管阵列基板和x射线探测器
CN108470747B (zh) 2018-02-05 2021-04-02 惠科股份有限公司 一种显示面板和显示装置
CN108410447A (zh) 2018-03-29 2018-08-17 京东方科技集团股份有限公司 介孔氧化硅纳米复合材料及其制备方法和显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1422310A (zh) * 2000-04-04 2003-06-04 旭化成株式会社 用于制备绝缘薄膜的涂料组合物
CN101221995A (zh) * 2008-01-23 2008-07-16 中国电子科技集团公司第四十四研究所 多层敏感膜光腔结构肖特基势垒红外探测器
CN108735834A (zh) * 2017-04-18 2018-11-02 京东方科技集团股份有限公司 一种光电二极管、x射线探测基板及其制作方法
CN109768062A (zh) * 2019-01-11 2019-05-17 惠科股份有限公司 一种x射线探测器及具有其的显示设备
CN109841636A (zh) * 2019-01-11 2019-06-04 惠科股份有限公司 X射线探测器、x射线探测器光电转换层的制造方法及医用设备

Also Published As

Publication number Publication date
US11398520B2 (en) 2022-07-26
US20210257403A1 (en) 2021-08-19

Similar Documents

Publication Publication Date Title
CN101988967B (zh) 在闪烁物上形成的射线照相检测器
KR102547798B1 (ko) 방사선 검출기 및 이를 채용한 방사선 촬영 장치
US10690786B2 (en) X-ray detector and manufacturing method thereof
JPH01165984A (ja) 映像を電気信号に変換する装置
TW201119021A (en) Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics
JP7048588B2 (ja) ハイブリッド・アクティブマトリクス・フラットパネル検出器システムおよび方法
CN113330567B (zh) 一种探测基板、其制作方法及平板探测器
JP2004080010A (ja) 直接変換に基づく画像化ｘ線検出器
CN105140250A (zh) 光电转换阵列基板及其制作方法、光电转换装置
CN109841636B (zh) X射线探测器、x射线探测器光电转换层的制造方法及医用设备
CN106847986A (zh) X射线平板探测器及其制备方法
WO2022033253A1 (zh) 射线探测器基板、射线探测器及射线探测方法
JP6858125B2 (ja) 複合シンチレーション結晶、複合シンチレーション検出器及び放射線検出装置
CN109782330B (zh) X射线探测器及显像设备
WO2020143487A1 (zh) 感光元件、x射线探测器及显示装置
US11476379B2 (en) Photosensitive device, X-ray detector and display device
WO2020143483A1 (zh) X射线探测器、x射线探测器制造方法及医用设备
CN109768062B (zh) 一种x射线探测器及具有其的显示设备
CN109342465A (zh) 具有光电二极管的集成闪烁体网格
CN115631872A (zh) 一种托卡马克装置中金刚石谱仪诊断系统及方法
US12066580B2 (en) Photodetection device
US20060153334A1 (en) Solid-state x-ray detector
WO2020143485A1 (zh) 半导体、x射线探测器及显示设备
CN109786499A (zh) 半导体、x射线探测器及显示设备
EP1113290A2 (en) Radiation imager having light absorbing layer

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19908761

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 16-11-2021)

122 Ep: pct application non-entry in european phase

Ref document number: 19908761

Country of ref document: EP

Kind code of ref document: A1