WO2020138273A1 - Siの被膜を有する純銅粉及びその製造方法並びに該純銅粉を用いた積層造形物 - Google Patents
Siの被膜を有する純銅粉及びその製造方法並びに該純銅粉を用いた積層造形物 Download PDFInfo
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- WO2020138273A1 WO2020138273A1 PCT/JP2019/051092 JP2019051092W WO2020138273A1 WO 2020138273 A1 WO2020138273 A1 WO 2020138273A1 JP 2019051092 W JP2019051092 W JP 2019051092W WO 2020138273 A1 WO2020138273 A1 WO 2020138273A1
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- pure copper
- copper powder
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- wtppm
- adhesion amount
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000576 coating method Methods 0.000 title claims abstract description 24
- 239000011248 coating agent Substances 0.000 title claims abstract description 23
- 239000000654 additive Substances 0.000 title claims abstract description 12
- 230000000996 additive effect Effects 0.000 title claims abstract description 12
- 239000002245 particle Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 22
- 238000005245 sintering Methods 0.000 abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- 238000000110 selective laser sintering Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 17
- 238000004381 surface treatment Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 5
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- KSFBTBXTZDJOHO-UHFFFAOYSA-N diaminosilicon Chemical compound N[Si]N KSFBTBXTZDJOHO-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- ZPQAUEDTKNBRNG-UHFFFAOYSA-N 2-methylprop-2-enoylsilicon Chemical compound CC(=C)C([Si])=O ZPQAUEDTKNBRNG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 epoxysilane Chemical compound 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- YWXYYJSYQOXTPL-SLPGGIOYSA-N isosorbide mononitrate Chemical compound [O-][N+](=O)O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 YWXYYJSYQOXTPL-SLPGGIOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 235000021110 pickles Nutrition 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/10—Alloys based on copper with silicon as the next major constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/25—Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/30—Process control
- B22F10/34—Process control of powder characteristics, e.g. density, oxidation or flowability
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
- B33Y70/10—Composites of different types of material, e.g. mixtures of ceramics and polymers or mixtures of metals and biomaterials
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/008—Using a protective surface layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/28—Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/10—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Definitions
- the present invention relates to a pure copper powder having a Si film, a method for producing the same, and a layered product using the pure copper powder.
- a 3D printer is also called an additive manufacturing (AM) method. Pure copper powder is thinly spread on a substrate to form a metal powder layer, and the metal powder layer is scanned with an electron beam or laser light to be melted and solidified. In this method, a new powder is thinly laid on top, melted and solidified in the same manner, and this is repeated to produce a metal-shaped object having a complicated shape.
- AM additive manufacturing
- the metal powder when the metal powder is irradiated with the electron beam, the metal powder may have a high electric resistance and thus may be charged up. Therefore, the metal powder is preheated and the adjacent metal powder is necked to form a conductive path. However, at this time, there is a problem that the metal powder is partially sintered by the preheating, and if the sintering progresses, it is difficult for the powder to come out from the inside of the hole of the shaped article.
- EB electron beam
- Patent Document 1 discloses a metal powder subjected to surface treatment in order to suppress sintering and make necking as weak as possible. Specifically, an organic coating is formed on the surface of the metal powder using a silane coupling agent, etc., so that the electron beam can be directly applied to the metal powder in the deposited state without partial sintering even by preheating. Techniques that allow irradiation are described.
- the present invention suppresses partial sintering due to preheating of pure copper powder in additive manufacturing by an electron beam (EB) method, and suppresses a decrease in vacuum degree during modeling by carbon (C) during modeling.
- An object of the present invention is to provide a pure copper powder having a Si film formed thereon, a method for producing the same, and a laminate-molded article using the pure copper powder.
- the present invention provides the following embodiments. 1) Pure copper powder on which a Si coating is formed, the Si adhesion amount is 5 wtppm or more and 200 wtppm or less, the C adhesion amount is 15 wtppm or more, and the weight ratio C/Si of the Si adhesion amount and the C adhesion amount is 3 or less. Pure copper powder characterized by being present. 2) Pure copper powder on which a Si coating is formed, where 1/10 or more of the maximum signal intensity is 40% or more of the entire particles when Si is analyzed by WDX analysis, and the amount of C attached is 15 wtppm or more.
- the present invention also provides the following embodiments. 6)
- the embodiment of the present invention 7) A pure copper layered product having a relative density of 95% or more. 8) The pure copper layered product described in 7) above, wherein the Si concentration in the layered product is 5 wtppm or more and 200 wtppm or less. 9) A pure copper additive manufacturing product produced by additive manufacturing using the pure copper powder described in any one of 1) to 5) as a raw material.
- the present invention in the layered manufacturing by the electron beam (EB) method, it is possible to suppress partial sintering due to preheating or the like, and to suppress a decrease in the degree of vacuum at the time of modeling by carbon (C) during modeling. It becomes possible.
- EB electron beam
- 3 is an SEM image of pure copper powder having a Si coating formed in Example 1-2.
- 3 is a mapping image of Si by WDX (wavelength dispersive X-ray) of Example 1-2.
- 5 is an image showing a portion corresponding to a coverage in Si mapping of Example 1-2.
- ⁇ Metallic powder used in additive manufacturing by electron beam (EB) method is usually preheated for the purpose of suppressing charge-up. Preheating is performed at a relatively low temperature, but the metal powder partially sinters, causing large necking, making it difficult to remove the metal powder remaining in the modeled object, or even removing it. However, there was a problem that it could not be reused.
- Patent Document 1 discloses a technique for forming a coating film of Si or Ti on the surface of the metal powder by performing a surface treatment with an organic substance such as diaminosilane or aminotitanate on the surface treatment means of the metal powder. The formation of such a coating is effective in suppressing partial sintering due to preheating.
- the organic substance (C) is also attached at the same time, but when pure copper powder to which such an organic substance is attached is used, the degree of vacuum is lowered during the layered manufacturing.
- the molding conditions become unstable. Further, during molding, a part of the organic matter may be decomposed by heat and turned into a gas, which may cause an offensive odor.
- the inventors of the present invention have made intensive studies on such a problem and found that the degree of vacuum decreases during modeling when the ratio of C to Si exceeds a predetermined range. Further, it was found that by heating the surface-treated pure copper powder under a certain condition, the ratio of C adhering to the pure copper powder can be suppressed within a certain range, and the decrease in the degree of vacuum can be suppressed. In view of such circumstances, the inventors of the present invention provide a pure copper powder having a Si film formed thereon and capable of suppressing a decrease in vacuum degree during modeling.
- the pure copper powder according to the embodiment of the present invention is a pure copper powder on which a Si coating is formed, the Si adhesion amount is 5 wtppm or more and 200 wtppm or less, the C adhesion amount is 15 wtppm or more, and the weight ratio C/Si is 3 or less.
- the Si adhesion amount is 5 wtppm or more and 200 wtppm or less
- the C adhesion amount is 15 wtppm or more
- the weight ratio C/Si is 3 or less.
- a hollow structure means what has a space inside the three-dimensional shaped object, or what has penetrated the inside.
- a pure copper powder having a Si film formed thereon is 1/10 or more of a maximum signal intensity when Si is analyzed by WDX analysis.
- the part is 40% or more of the particles
- the C adhesion amount is 15 wtppm or more
- the weight ratio C/Si of the Si adhesion amount and the C adhesion amount is 3 or less. Since WDX (wavelength dispersive X-ray) analysis can specify where and to what extent Si element exists in the pure copper powder, it can be used as an index of the coverage of Si that coats the pure copper powder.
- the portion of 1/10 or more of the maximum signal intensity means an area excluding a portion of less than 1/10 of the maximum signal intensity detected by the detector when the pure copper powder is analyzed by WDX.
- the corresponding portion is a portion having a signal intensity of 40 to 400. If the coverage of Si is less than 40%, the necking portion due to partial sintering becomes large during preheating, and during EB spraying, heat escapes to the surrounding pure copper powder through necking, making it difficult to melt the pure copper powder. May be.
- the present invention is a pure copper powder having a Si coating formed thereon, the thickness of the Si coating is 5 nm or more and 300 nm or less, the C adhesion amount is 15 wtppm or more, and the Si adhesion amount and C It is characterized in that the weight ratio C/Si of the attached amount is 3 or less.
- the film thickness of the film is determined from the time taken until Auger electrons are detected by Auger electron spectroscopy (AES) and Si is no longer detected while digging the powder surface at a constant sputter rate and the sputter rate. It is the calculated value. Two points were randomly selected from one particle to be detected, and the values in the examples show the average values.
- the film thickness of the film is 5 nm or less, partial sintering cannot be suppressed during preheating.
- the film thickness of the film is 300 nm or more, it is difficult to form necking and cause charge-up. Therefore, the film thickness of the film is preferably 5 nm or more and 300 nm or less.
- the oxygen concentration in the pure copper powder is 1000 wtppm or less. It is more preferably 500 wtppm or less.
- pores may be formed inside the modeled object.However, by reducing the oxygen concentration in pure copper powder, formation of such pores is possible. It is possible to suppress, and it becomes possible to obtain a high-density shaped object.
- the average particle diameter D50 (median diameter) of the pure copper powder is preferably 10 ⁇ m or more and 150 ⁇ m or less.
- the average particle diameter D50 means the average particle diameter at an integrated value of 50% in the particle size distribution measured by image analysis.
- the pure copper powder preferably has a purity of 99.9% or more. Since pure copper has high thermal conductivity, it is possible to manufacture a molded article having excellent thermal conductivity by manufacturing a complicated shape having a hollow structure, which could not be manufactured conventionally, by additive manufacturing. Further, when the density of the shaped article is low, the thermal conductivity also becomes low because a substance having poor thermal conductivity (such as air) enters the shaped article, but when the pure copper powder according to the embodiment of the present invention is used, It is possible to produce a layered product having a relative density of 95% or more.
- a method for producing pure copper powder according to the embodiment of the present invention will be described.
- a required amount of pure copper powder is prepared. It is preferable to use the pure copper powder having an average particle diameter D50 (median diameter) of 10 to 150 ⁇ m.
- the target particle size can be obtained by sieving the average particle size.
- the pure copper powder can be produced by using the atomizing method, but the pure copper powder according to the embodiment of the present invention may be produced by another method and is not limited thereto.
- pure copper powder is pretreated. Since a natural oxide film is usually formed on pure copper powder, it may be difficult to form a desired bond. Therefore, it is preferable to remove (pickle) the oxide film in advance.
- the natural oxide film can be removed by immersing the copper powder in a dilute sulfuric acid aqueous solution.
- this pretreatment is a treatment performed when a natural oxide film is formed on the pure copper powder, and it is not necessary to perform this pretreatment on all the pure copper powder. After pickling, if desired, you may wash with pure water.
- the pure copper powder is immersed in a solution containing a silane coupling agent to form a Si film on the surface of the pure copper powder.
- the solution temperature surface treatment temperature
- the solution temperature is preferably 5 to 80°C. If the solution temperature is lower than 5°C, the coverage of Si will be low. Further, the longer the immersion time, the greater the amount of Si that adheres. Therefore, it is preferable to adjust the immersion time by matching the target amount of Si that is adhered.
- silane coupling agent a commercially available silane coupling agent may be used, and aminosilane, vinylsilane, epoxysilane, mercaptosilane, methacrylsilane, ureidosilane, alkylsilane, carboxyl group-containing silane, etc. may be used. You can
- a 0.1 to 30% aqueous solution obtained by diluting this solution with pure water can be used. However, since the higher the concentration of the solution, the greater the amount of Si deposited, the concentration can be adjusted according to the target amount of Si deposited. Is preferably adjusted. Moreover, you may perform the said surface treatment, stirring desired.
- heating is performed in vacuum or in the air to cause a coupling reaction, and thereafter, drying is performed to form a Si film.
- the heating temperature varies depending on the coupling agent used, but can be 70° C. to 120° C., for example.
- the heat treatment temperature can be set to a temperature that gives a desired weight ratio C/Si.
- the temperature may be 400° C. or higher and 1000° C. or lower. If the heating temperature is lower than 400° C., the organic substances cannot be sufficiently removed, which causes deterioration of the degree of vacuum at the time of modeling and contamination. If the temperature exceeds 1000° C., the sintering progresses quickly and the powder state cannot be maintained.
- the heating can be performed in vacuum (about 10 ⁇ 3 Pa). Furthermore, the heating time can be adjusted together with the temperature so that the desired weight ratio C/Si can be obtained, and for example, it is preferably 2 to 12 hours.
- the molding and evaluation method according to the embodiment of the present invention including the examples and comparative examples are as follows. (Regarding the production of metal layered products) Manufacturer: Arcam device name: A2X Molding conditions: Preheating temperature: 300°C to 1600°C Degree of vacuum: 1 x 10 -2 mBar Laminated product: A layered product having a 35 mm square, a thickness of 35 mm, and a tubular hollow structure having a diameter of 3 mm in the center was produced.
- the average particle diameter D50 (volume basis) was measured by the following device and conditions. Manufacturer: Spectris Co., Ltd. (Malvern Division) Device name: Dry particle image analyzer Morphologi G3 Measurement condition: Particle introduction amount: 11 mm 3 Injection pressure: 0.8 bar Measurement particle size range: 3.5-210 ⁇ m Number of particles measured: 20000
- SII device name SPS3500DD
- Analytical method ICP-OES (high frequency inductively coupled plasma optical emission spectrometry) Measurement sample amount: 1g Number of measurements: Two times, and the average value is taken as the amount of adhesion.
- Si coverage When Si is analyzed by WDX analysis, the ratio of 1/10 or more of the maximum signal intensity to the entire particle is called “Si coverage”.
- One particle is analyzed as a sample, and the coverage of Si is measured using the image processing function in WDX. Specifically, one screen of one particle on the screen by WDX is scanned, and the signal intensity of Si is measured. However, since the back side of the particle cannot be scanned, accurately speaking, when the area of the image of the particle viewed from one direction is 100%, Si occupies that area (portion of 1/10 or more of the maximum signal intensity). The area ratio of is the coverage.
- Manufacturer JEOL Device name: FE-EPMA Accelerating voltage: 15kV Output current: 15 ⁇ A Scan speed: 10 mm/sec
- Si film thickness is a value calculated from the time taken until Auger electrons are detected by Auger electron spectroscopy (AES) and Si is no longer detected while digging the powder surface at a constant sputter rate, and the sputter rate. Is. Two points were randomly selected from one particle to be detected, and the values in the examples show the average values.
- Manufacturer JEOL Ltd.
- the amount of change in oxygen concentration after heating 150° C., 24 hours
- the pure copper powder on which the Si coating was formed was examined, and the amount of change in oxygen concentration (after heating/before heating) was 5 or less. It was judged that the thing was circle (o), and the thing exceeding 5 was x (x).
- Example 1 Comparative Example 1: Heat treatment temperature after surface treatment
- the pure copper powder prepared is pure copper powder having an average particle size (D50) of 72 ⁇ m and a specific surface area of 0.024 m 2 /g, which is prepared by an atomizing method, and the pure copper powder is immersed in a dilute sulfuric acid aqueous solution to spontaneously oxidize the surface. The film was removed. Next, pure copper powder was immersed in an aqueous coupling agent solution (5%) diluted with pure water for 60 minutes, and then dried at 70 to 120° C. in vacuum or in the air. After drying, this pure copper powder was heat-treated in vacuum at 550 to 800° C. (Examples 1-1 and 1-2).
- Table 1 shows a summary of the amount of Si deposited, the Si coverage, the film thickness of Si, the amount of C deposited, and the weight ratio C/Si of the pure copper powder on which the film has been formed by the above processing.
- Example 2 Particle diameter of pure copper powder
- a pure copper powder having an average particle diameter (D50) of 38 ⁇ m prepared by an atomizing method was prepared, and the pure copper powder was immersed in a dilute sulfuric acid aqueous solution to remove the natural oxide film on the surface.
- pure copper powder was diluted with pure water and immersed in a diaminosilane aqueous solution (5%) for 60 minutes, and then dried at 70 to 120° C. in vacuum or in the air. After drying, this pure copper powder was heat-treated in vacuum at 800° C. (Example 2-1).
- Table 2 shows a summary of the amount of Si deposited, the Si coverage, the film thickness of Si, the amount of C deposited, and the weight ratio C/Si of the pure copper powder on which the film has been formed by the above processing.
- the additive manufacturing by the electron beam (EB) method in the additive manufacturing by the electron beam (EB) method, it is possible to suppress the partial sintering due to preheating or the like, and at the same time, the contamination of the modeling machine or the occurrence of the contamination due to the carbon (C) occurs. It becomes possible to suppress. As a result, it is possible to produce a layered product with a complicated shape (hollow structure, etc.), and to form a pure copper powder layer, but to reuse it even if it remains without being irradiated with an electron beam. It has an excellent effect that The pure copper powder according to the embodiment of the present invention is particularly useful as a pure copper powder for a metal 3D printer.
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Abstract
Description
1)Siの被膜が形成された純銅粉であって、Si付着量が5wtppm以上200wtppm以下、C付着量が15wtppm以上であり、Si付着量とC付着量の重量比率C/Siが3以下であることを特徴とする純銅粉。
2)Siの被膜が形成された純銅粉であって、WDX分析によりSiを分析したとき最大信号強度の1/10以上の部分が粒子全体の40%以上であり、C付着量が15wtppm以上であって、Si付着量とC付着量の重量比率C/Siが3以下であることを特徴とする純銅粉。
3)Siの被膜が形成された純銅粉であって、Si被膜の膜厚が5nm以上300nm以下であり、C付着量が15wtppm以上、Si付着量とC付着量の重量比率C/Siが3以下であることを特徴とする純銅粉。
4)前記純銅粉中の酸素濃度が1000wtppm以下であることを特徴とする上記1)~3)のいずれか一に記載の純銅粉
5)前記純銅粉の平均粒子径D50(メジアン径)が10μm以上150μm以下であることを特徴とする上記1)~4)のいずれか一に記載の純銅粉。
6)上記1)~5)のいずれか一に記載の純銅粉の製造方法であって、シラン系カップリング剤を含む溶液に純銅粉を浸漬して、当該純銅粉にSiの被膜を形成した後、1000℃以下で加熱することを特徴とする純銅粉の製造方法。
7)相対密度が95%以上であることを特徴とする純銅積層造形物。
8)積層造形物中のSi濃度が5wtppm以上200wtppm以下であることを特徴とする上記7)に記載の純銅積層造形物。
9)上記1)~5)のいずれか一に記載の純銅粉を原料として、積層造形法により作製される純銅積層造形物。
Siの付着量が5wtppm未満の場合、部分焼結を十分に抑制することができない。Siの付着量が200wtppm超の場合、造形物の導電率や密度の低下を引き起こす可能性があるため、Siは200wtppm以下にすることが好ましい。
なお、本開示において、中空構造とは、立体形状の造形物内部に空間を有するもの、又は、その内部が貫通しているものを意味する。
WDX(波長分散型X線)分析は、純銅粉のどこに、どの程度Si元素が存在するかを特定することができるため、純銅粉を被覆するSiの被覆率の指標とすることができる。ここで、最大信号強度の1/10以上の部分とはWDXで純銅粉を分析した際に検出器が検出した最大の信号強度の1/10未満の部分を排除した面積を意味する。例えば粒全体をスキャンした時の信号強度が15~400であった場合、該当部は40~400の信号強度をもつ部分になる。
Siの被覆率が40%未満の場合、予備加熱した際に部分焼結によるネッキング部分が大きくなり、EB溶射時に、ネッキングを通じて周囲の純銅粉に熱が逃げてしまい、純銅粉の溶融が困難となることがある。
ここで、被膜の膜厚は、一定のスパッタレートで粉体表面を掘り進めながら、オージェ電子分光法(AES)によりオージェ電子を検出し、Siが検出しなくなるまでにかかった時間とスパッタレートから算出した値である。検出する場所は1個の粒子からランダムに2点選び、実施例の値はその平均値を示す。
被膜の膜厚が5nm以下の場合、予備加熱時に部分焼結を抑制することができない。被膜の膜厚が300nm以上の場合、ネッキングを形成しづらく、チャージアップの原因となるため、被膜の膜厚は5nm以上300nm以下にすることが好ましい。
上記では、純銅粉にSiの皮膜を形成した場合を説明したが、Tiの皮膜を形成した場合も同様の効果を得ることができると考えられる。
まず、必要量の純銅粉を準備する。純銅粉は、平均粒子径D50(メジアン径)が10~150μmのものを用いることが好ましい。平均粒子径は、篩別することで目標とする粒度のものを得ることができる。純銅粉は、アトマイズ法を用いて作製することができるが、本発明の実施形態に係る純銅粉は、他の方法で作製されたものでもよく、これに限定されるものではない。
(金属積層造形物の作製について)
メーカー:Arcam社製
装置名:A2X
造形条件:予備加熱温度:300℃~1600 ℃
真空度:1×10‐2mBar
積層造形物:35mm角、厚さ35mm、中心部に径3mmの管状の中空構造を有する積層造形物を作製した。
平均粒子径D50(体積基準)は、以下の装置及び条件で測定した。
メーカー:スペクトリス株式会社(マルバーン事業部)
装置名:乾式粒子画像分析装置 Morphologi G3
測定条件:
粒子導入量:11mm3
射出圧:0.8bar
測定粒径範囲:3.5-210μm
測定粒子数:20000個
純銅粉の比表面積は、以下の装置及び条件で測定した。
メーカー:ユアサイオニクス株式会社
装置名:モノソーブ
測定原理:BET1点法
メーカー:SII社製
装置名:SPS3500DD
分析法:ICP-OES(高周波誘導結合プラズマ発光分析法)
測定サンプル量:1g
測定回数:2回として、その平均値を付着量とする。
メーカー:LECO社製
装置名:TCH600
分析法:不活性ガス融解法
測定サンプル量:1g
測定回数:2回として、その平均値を付着量、濃度とする。
WDX分析によりSiを分析したとき、最大信号強度の1/10以上の部分が粒子全体に占める割合を「Siの被覆率」と呼ぶ。サンプルとして1粒子を分析し、WDX内の画像処理機能を用いて、Siの被覆率を測定する。具体的には、WDXによる画面上にある1個の粒子の1画面すべてをスキャンして、Siの信号強度を計測する。但し、粒子の裏面側はスキャンできないため、正確には、粒子を一方向から見た像の面積を100%としたときに、その面積に占めるSi(最大信号強度の1/10以上の部分)の面積比率を、被覆率としている。
メーカー:日本電子製
装置名:FE-EPMA
加速電圧:15kV
出力電流:15μA
スキャン速度:10mm/sec
被膜の膜厚は、一定のスパッタレートで粉体表面を掘り進めながら、オージェ電子分光法(AES)によりオージェ電子を検出し、Siが検出しなくなるまでにかかった時間とスパッタレートから算出した値である。検出する場所は、1つの粒子からランダムに2点選び、実施例の値はその平均値を示す。
メーカー:日本電子 株式会社
装置名:AES(JAMP-7800F)
フィラメント電流:2.22A
プローブ電圧:10kV
プローブ電流:1.0×10-8A
プローブ径:約500nm
スパッタリングレート:7.2nm/min(SiO2換算)
純銅粉は大気に曝されていると表面に自然酸化膜が形成される。そのような酸化膜が形成された純銅粉をAM造形に用いた場合、電子ビームやレーザーの反射率や吸収率が変化して、酸化膜が形成されていない純銅粉と熱吸収が異なり、同一条件で造形しても造形物の密度など物理的性質がばらついて安定しないという問題がある。純銅粉の表面にSiを含む有機被膜があることで大気中の水分と反応しづらく、酸化を抑制することが可能となる。酸化抑制の検証として、Si被膜が形成された純銅粉を加熱(150℃、24時間)した後の酸素濃度の変化量を調べ、酸素濃度の変化量(加熱後/加熱前)が5以下のものをマル(〇)、5を超えるものをバツ(×)、と判定した。
加熱により焼結が進行した粉は、粉末同士が結合してサイズが大きくなるため、所定サイズの篩を通ることができない。したがって、篩を通ることができれば、加熱による焼結抑制効果の発現があると判断した。その検証として、φ50mmのアルミナ坩堝に50gの純銅粉を入れ、真空度1×10-3Pa以下の雰囲気で、500℃、4時間、加熱し、加熱後の純銅粉が目開き250μmの篩を通過するかどうかを確認し、通過したものを良、通過しなかったものを不良、と判定した。
C(炭素)の比率が高い純銅粉では、造形時に有機皮膜の一部が熱によって分解した気体が異臭の原因となる。また、分解した有機物成分が装置内に飛散するため、真空度が一時的に低下する。低い真空度では、EB(電子ビーム)による加熱が不十分になり、積層造形物に欠陥が生じることにもつながる。真空度の変化の検証として、造形時に真空度が2.5×10-3Pa以下で推移したものをマル(〇)、真空度が2.5×10-3Pa超に変化したものをバツ(×)、と判定した。
積層造形物からサンプルを20mm四方で切り出して、市販のアルキメデス密度測定器で密度を測定した。相対密度は測定した密度を理論密度(Cuの場合には8.93g/cc)で除することで算出した。
純銅粉として、アトマイズ法で作製した平均粒子径(D50)が72μm、比表面積が0.024m2/gの純銅粉を用意し、この純銅粉を希硫酸水溶液に浸漬して、表面の自然酸化膜を除去した。次に、純水で希釈したカップリング剤水溶液(5%)に純銅粉を60分間浸漬した後、真空中又は大気中、70~120℃で乾燥させた。乾燥後、この純銅粉を真空中、550~800℃で加熱処理した(実施例1-1、1-2)。一方、比較例1-1、1-2は、加熱処理は実施しなかった。
以上の処理より、被膜が形成された純銅粉の、Si付着量、Si被覆率、Siの膜厚、C付着量、重量比C/Siをまとめたものを表1に示す。
次に、上記の純銅粉を用いて電子ビーム(EB)方式により積層造形物を作製した。その際「造形時の真空度」を測定したところ、実施例1-1、1-2では、いずれも真空度の変化は見られなかったが、比較例1-1は、真空度の変化が見られた。比較例1-2は、造形時の真空度の変化はなかったが、仮焼結試験後に粉の状態を維持できなかった。また、造形物の相対密度を測定した結果、いずれの実施例においても95%以上と良好な結果を示した。以上の結果を表1に示す。
純銅粉として、アトマイズ法で作製した平均粒子径(D50)が38μmの純銅粉を用意し、この純銅粉を希硫酸水溶液に浸漬して、表面の自然酸化膜を除去した。次に、純水で希釈しジアミノシラン水溶液(5%)に純銅粉を60分間浸漬した後、真空中又は大気中、70~120℃で乾燥させた。乾燥後、この純銅粉を真空中、800℃で加熱処理した(実施例2-1)。
以上の処理より、被膜が形成された純銅粉の、Si付着量、Si被覆率、Siの膜厚、C付着量、重量比C/Siをまとめたものを表2に示す。
Claims (9)
- Siの被膜が形成された純銅粉であって、Si付着量が5wtppm以上200wtppm以下、C付着量が15wtppm以上であり、Si付着量とC付着量の重量比率C/Siが3以下であることを特徴とする純銅粉。
- Siの被膜が形成された純銅粉であって、WDX分析によりSiを分析したとき最大信号強度の1/10以上の部分が粒子全体の40%以上であり、C付着量が15wtppm以上であって、Si付着量とC付着量の重量比率C/Siが3以下であることを特徴とする純銅粉。
- Siの被膜が形成された純銅粉であって、Si被膜の膜厚が5nm以上300nm以下、C付着量が15wtppm以上、Si付着量とC付着量の重量比率C/Siが3以下であることを特徴とする純銅粉。
- 前記純銅粉中の酸素濃度が1000wtppm以下であることを特徴とする請求項1~3のいずれか一項に記載の純銅粉。
- 前記純銅粉の平均粒子径D50(メジアン径)が10μm以上150μm以下であることを特徴とする請求項1~4のいずれか一項に記載の純銅粉。
- 請求項1~5のいずれか一項に記載の純銅粉の製造方法であって、シラン系カップリング剤を含む溶液に純銅粉を浸漬して、該純銅粉にSiの被膜を形成した後、400℃以上、1000℃以下で加熱することを特徴とする純銅粉の製造方法。
- 相対密度が95%以上であることを特徴とする純銅積層造形物。
- 積層造形物中のSi濃度が5wtppm以上200wtppm以下であることを特徴とする請求項7に記載の金属積層造形物。
- 請求項1~5のいずれか一項に記載の純銅粉を原料として、積層造形法により作製される純銅積層造形物。
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US16/968,960 US11498122B2 (en) | 2018-12-27 | 2019-12-26 | Pure copper powder having Si coating and production method thereof, and additive manufactured object using said pure copper powder |
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KR1020207025193A KR102328897B1 (ko) | 2018-12-27 | 2019-12-26 | Si의 피막을 갖는 순동분 및 그의 제조 방법, 그리고 해당 순동분을 사용한 적층 조형물 |
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US11498122B2 (en) | 2022-11-15 |
US20210053114A1 (en) | 2021-02-25 |
TWI726557B (zh) | 2021-05-01 |
CN111836692B (zh) | 2022-10-25 |
EP3722024A1 (en) | 2020-10-14 |
JPWO2020138273A1 (ja) | 2021-02-18 |
JP6722838B1 (ja) | 2020-07-15 |
KR102328897B1 (ko) | 2021-11-22 |
KR20200111811A (ko) | 2020-09-29 |
EP3722024A4 (en) | 2021-11-10 |
CN111836692A (zh) | 2020-10-27 |
TW202041303A (zh) | 2020-11-16 |
CA3092015C (en) | 2024-02-13 |
CA3092015A1 (en) | 2020-07-02 |
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