WO2020133720A1 - Oled显示面板及oled显示装置 - Google Patents

Oled显示面板及oled显示装置 Download PDF

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Publication number
WO2020133720A1
WO2020133720A1 PCT/CN2019/078159 CN2019078159W WO2020133720A1 WO 2020133720 A1 WO2020133720 A1 WO 2020133720A1 CN 2019078159 W CN2019078159 W CN 2019078159W WO 2020133720 A1 WO2020133720 A1 WO 2020133720A1
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WIPO (PCT)
Prior art keywords
layer
groove
oled display
display panel
light
Prior art date
Application number
PCT/CN2019/078159
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English (en)
French (fr)
Inventor
金江江
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/476,276 priority Critical patent/US11335750B2/en
Publication of WO2020133720A1 publication Critical patent/WO2020133720A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present application relates to a display technology, in particular to an OLED display panel and an OLED display device.
  • OLED Organic Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • panel manufacturing through COF Chip On Film
  • COP Chip On Plastic
  • the camera is generally built under the display area, and the placement area corresponding to the camera is to complete the entire OLED manufacturing process, through the laser top-down or bottom-up to penetrate the entire device, Form a through hole and set the camera in the area corresponding to the through hole to achieve 100% transmittance of the camera's built-in display area technology.
  • this method cannot prevent the water and oxygen from eroding the OLED electrodes and materials from the side.
  • the embodiments of the present application provide an OLED display panel and an OLED display device, to solve the technical problem that the existing OLED display panel cannot avoid the lateral corrosion of the OLED electrodes and materials by water and oxygen after opening.
  • An embodiment of the present application provides an OLED display panel, including a TFT structure layer, a light-emitting function layer, and an encapsulation layer disposed on a substrate in sequence, wherein,
  • the OLED display panel has a display area and a light-transmitting area, and the display area is surrounded on the peripheral side of the light-transmitting area;
  • the region of the OLED display panel corresponding to the light-transmitting region is provided with a groove, the groove penetrates at least the encapsulation layer, the light-emitting function layer, and part of the TFT structure layer;
  • a touch function layer is provided on the encapsulation layer, the touch function layer covers the display area, and at least part of the touch function layer extends from the display area to the groove and covers the recess groove;
  • the OLED display panel includes a substrate, the substrate includes a first portion and a second portion, the first portion corresponds to the display area, and the second portion corresponds to the light transmission area;
  • the thickness of the second portion is smaller than the thickness of the first portion.
  • the convex groove and the groove are arranged with the central axis.
  • the area of the orthographic projection of the convex groove on the plane of the substrate is smaller than the area of the orthographic projection of the groove on the plane of the substrate.
  • the light-transmitting region includes a buffer layer of the TFT structure layer, a first gate insulating layer, a second gate insulating layer, and a third insulating layer, and the groove penetrates the encapsulation layer, the light emitting functional layer, and The flat layer.
  • the display area includes a buffer layer of the TFT structure layer, an active layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second A gate metal layer, a third insulating layer, a source-drain metal layer and a flat layer, and the first electrode, pixel isolation layer, light emitting layer and second electrode layer of the light emitting functional layer;
  • the OLED display panel has a display area and a light-transmitting area, and the display area is surrounded on the peripheral side of the light-transmitting area;
  • the area of the OLED display panel corresponding to the light-transmitting area is provided with a groove, the groove penetrates at least the encapsulation layer;
  • a touch function layer is provided on the encapsulation layer, the touch function layer covers the display area, and at least part of the touch function layer extends from the display area to the groove and covers the recess groove.
  • the first insulating layer or/and the second insulating layer cover the groove.
  • the first insulating layer or/and the second insulating layer have a multilayer structure or a single layer structure.
  • the OLED display panel includes a substrate, the substrate includes a first portion and a second portion, the first portion corresponds to the display area, and the second portion corresponds to the transparent Light zone
  • the thickness of the second portion is smaller than the thickness of the first portion.
  • a convex groove is convexly formed on the bottom surface of the substrate corresponding to the light-transmitting area to form the second portion.
  • the convex groove and the groove are arranged with the central axis.
  • the area of the orthographic projection of the convex groove on the plane of the substrate is smaller than the area of the orthographic projection of the groove on the plane of the substrate.
  • the angle between the bottom surface of the groove and the side wall surface of the groove is an obtuse angle.
  • the OLED display panel further includes an optical glue and a cover plate, the optical glue is provided on the touch function and fills the groove, and the cover plate is provided on the optical Glue on.
  • the TFT structure layer includes a buffer layer, an active layer, a first gate insulating layer, a first gate metal layer, and a second gate insulating layer that are sequentially arranged on the substrate , A second gate metal layer, a third insulating layer, a source-drain metal layer, and a flat layer;
  • the light-emitting functional layer includes a first electrode, a pixel isolation layer, a light-emitting layer, and a second electrode that are sequentially disposed on the flat layer Floor;
  • the light-transmitting region includes a buffer layer of the TFT structure layer, a first gate insulating layer, a second gate insulating layer, and a third insulating layer, and the groove penetrates the encapsulation layer, the light emitting functional layer, and The flat layer.
  • the display area includes a buffer layer of the TFT structure layer, an active layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second A gate metal layer, a third insulating layer, a source-drain metal layer and a flat layer, and the first electrode, pixel isolation layer, light emitting layer and second electrode layer of the light emitting functional layer;
  • the encapsulation layer is provided on the second electrode layer.
  • An embodiment of the present application further provides an OLED display panel, including a TFT structure layer, a light-emitting function layer, and an encapsulation layer disposed on a substrate in sequence, wherein,
  • the OLED display panel has a display area and a light-transmitting area, and the display area is surrounded on the peripheral side of the light-transmitting area;
  • the area of the OLED display panel corresponding to the light-transmitting area is provided with a groove, the groove penetrates the encapsulation layer, the first electrode and the second electrode of the light-emitting function layer to improve the transparency of the light-transmitting area .
  • the TFT structure layer includes a buffer layer, an active layer, a first gate insulating layer, a first gate metal layer, and a second gate insulating layer that are sequentially arranged on the substrate , A second gate metal layer, a third insulating layer, a source-drain metal layer and a flat layer;
  • the light-emitting functional layer includes the first electrode, the pixel isolation layer, the light-emitting layer, and the second electrode layer that are sequentially disposed on the flat layer;
  • the light-transmitting region includes a buffer layer of the TFT structure layer, a first gate insulating layer, a second gate insulating layer, and a third insulating layer, and the groove penetrates the encapsulation layer, the light emitting functional layer, and The flat layer.
  • the display area includes a buffer layer of the TFT structure layer, an active layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second A gate metal layer, a third insulating layer, a source-drain metal layer and a flat layer, and the first electrode, pixel isolation layer, light emitting layer and second electrode layer of the light emitting functional layer;
  • the encapsulation layer is provided on the second electrode layer.
  • the OLED display panel includes a substrate, the substrate includes a first portion and a second portion, the first portion corresponds to the display area, and the second portion corresponds to the transparent Light zone
  • the thickness of the second portion is smaller than the thickness of the first portion.
  • a convex groove is convexly formed on the bottom surface of the substrate corresponding to the light-transmitting area to form the second portion.
  • a touch function layer is provided on the encapsulation layer, the touch function layer covers the display area, and at least part of the touch function layer extends from the display area to the The groove extends and covers the groove.
  • the touch function layer includes a first insulating layer, a first touch electrode, a second insulating layer, and a second touch electrode, the first insulating layer is disposed on the encapsulation layer
  • the first touch electrode is provided on the first insulating layer
  • the second insulating layer is provided on the first touch electrode
  • the second touch electrode is provided on the second insulation On the floor
  • the first insulating layer or/and the second insulating layer cover the groove.
  • the first insulating layer or/and the second insulating layer have a multilayer structure or a single layer structure.
  • the convex groove and the groove are arranged with the central axis.
  • the area of the orthographic projection of the convex groove on the plane of the substrate is smaller than the area of the orthographic projection of the groove on the plane of the substrate.
  • the angle between the bottom surface of the groove and the side wall surface of the groove is an obtuse angle.
  • the OLED display panel further includes an optical glue and a cover plate, the optical glue is provided on the touch function and fills the groove, and the cover plate is provided on the optical Glue on.
  • the present application also relates to an OLED display device, which includes the OLED display panel of the above application and an optical device disposed below the light transmission area.
  • the optical device is selected from one of a flash lamp, a camera, an infrared sensor, and an optical fingerprint recognition device.
  • the OLED display panel and the OLED display device of the present application remove the first electrode and the second electrode of the light emitting function layer by providing grooves in the light transmission area, thereby improving the light transmission area Transparency; and by forming a convex groove in the area of the substrate corresponding to the light-transmitting area, the second portion is formed, thereby reducing the thickness of the substrate corresponding to the light-transmitting area and improving the transparency of the portion; in addition, by applying the touch function
  • the first insulating layer or/and the second insulating layer of the layer cover the groove, which improves the packaging effect and solves the problem that the existing OLED display panel cannot avoid the corrosion of the OLED electrodes and materials from the side after water and oxygen are opened Technical issues.
  • FIG. 1 is a schematic structural diagram of an embodiment of an OLED display panel of this application.
  • FIG. 2 is a schematic structural view of an embodiment of an OLED display panel of the present application formed on a glass substrate;
  • FIG. 3 is a schematic structural diagram of an embodiment of an OLED display device of the present application.
  • FIG. 1 is a schematic structural diagram of an embodiment of an OLED display panel of the present application.
  • the OLED display panel 100 of the embodiment of the present application includes TFTs (Thin Film) arranged on the substrate 11 in sequence Transistor) structure layer 12, light emitting function layer 13 and encapsulation layer 14.
  • TFTs Thin Film
  • the OLED display panel 100 has a display area 10a and a light-transmitting area 10b.
  • the display area 10a surrounds the peripheral side of the light transmitting area 10b.
  • the area of the OLED display panel 100 corresponding to the light transmitting area 10b is provided with a groove 15.
  • the groove 15 penetrates at least the encapsulation layer 14, the light-emitting function layer 13 and a part of the TFT structure layer 12.
  • a touch function layer 16 is provided on the encapsulation layer 14.
  • the touch function layer 16 covers the display area 10a, and at least part of the touch function layer 16 extends from the display area 10a toward the groove 15 and covers the groove 15.
  • the recess 15 is provided in the light-transmitting area 10b, so that the first electrode 131 and the second electrode 134 of the light-emitting function layer 13 are removed in the light-transmitting area 10b, thereby improving the transparency of the light-transmitting area 10b .
  • the second portion 112 is formed, thereby reducing the thickness of the substrate 11 corresponding to the light-transmitting region 10b and improving the transparency of the portion.
  • the light transmitting area 10 does not emit light.
  • the groove penetrates the encapsulation layer. Since the groove only penetrates the encapsulation layer, the TFT structure layer and the light-emitting function layer in the light-transmitting region are complete, so the light-transmitting region has a light-emitting function.
  • the groove only penetrates the encapsulation layer, and the light-transmitting region may not include the anode, cathode, and organic light-emitting layer of the light-emitting functional layer, or even the metal film layer (such as the gate metal layer and the source-drain metal) in the TFT structure layer Layers etc.) etc.
  • the light-transmitting area does not have a light-emitting function.
  • the packaging effect is improved, and water and oxygen are prevented from invading the display area 10 a from the groove 15.
  • the TFT structure layer 12 includes a buffer layer 121, an active layer 122, a first gate insulating layer 123, a first gate metal layer 124, and a second gate insulating layer 125 that are sequentially disposed on the substrate 11 , A second gate metal layer 126, a third insulating layer 127, a source-drain metal layer 128, and a flat layer 129.
  • the light-emitting functional layer 13 includes a first electrode 131, a pixel isolation layer 132, a light-emitting layer 133, and a second electrode layer 134 that are sequentially disposed on the flat layer 129.
  • the display area 10a includes a substrate 11, a buffer layer 121 of a TFT structure layer 12, an active layer 122, a first gate insulating layer 123, a first gate metal layer 124, a second gate insulating layer 125, a second gate metal
  • the encapsulation layer 14 is provided on the second electrode layer 134.
  • the light transmitting region 10b includes a substrate 11, a buffer layer 121 of the TFT structure layer 12, a first gate insulating layer 123, a second gate insulating layer 125, and a third insulating layer 127.
  • the groove 15 penetrates the encapsulation layer 14, the light-emitting function layer 13 and the flat layer 129.
  • the groove penetrates the encapsulation layer, the light-emitting function layer, the flat layer, and any film layer between the flat layer and the substrate from top to bottom.
  • the structure of the corresponding light-transmitting area is also slightly adjusted for the increase or decrease of the film layer.
  • the substrate 11 is a flexible substrate of polyimide or polyester type.
  • Buffer layer 121, a first gate insulating layer 123, a second gate insulating layer 125 and the third insulating layer 127 are SiN x / SiO x inorganic material.
  • the active layer 122 is made of low-temperature polysilicon.
  • the first gate metal layer 124 and the second gate metal layer 126 are made of metal materials such as Mo.
  • the source-drain metal layer 128 is composed of Ti/Al/Ti.
  • the flat layer 129 is made of polyimide material.
  • the first electrode 131 is made of ITO/Ag/ITO or IZO/Ag/IZO.
  • the pixel isolation layer 132 is made of polyimide material.
  • the light emitting layer 133 is composed of small molecules or polymers.
  • the second electrode 134 is made of Mg/Ag.
  • the encapsulation layer 14 is composed of inorganic layers and organic layers alternately stacked.
  • the touch function layer 16 includes a first insulating layer 161, a first touch electrode 162, a second insulating layer 163, and a second touch electrode 164.
  • the first insulating layer 161 is provided on the encapsulation layer 14.
  • the first touch electrode 162 is disposed on the first insulating layer 161.
  • the second insulating layer 163 is disposed on the first touch electrode 162.
  • the second touch electrode 164 is disposed on the second insulating layer 163.
  • the first insulating layer 161 or/and the second insulating layer 163 cover the groove 15.
  • the first insulating layer 161 or/and the second insulating layer 163 is used to cover the 15 to play the role of encapsulating the groove 15 to prevent water and oxygen from invading the display area 10a from the groove 15.
  • the first insulating layer 161 and the second insulating layer 163 cover the groove 15 together.
  • the effect of encapsulating the groove 15 is improved, thereby improving the performance of preventing water and oxygen from invading the display area 10a.
  • the first insulating layer 161 or/and the second insulating layer 163 is a multi-layer structure or a single-layer structure.
  • the packaging effect is improved.
  • the first insulating layer 161 and the second insulating layer 163 composed of SiNx or SiONx. Mo, Ag, Ti, Cu, The first touch electrode 162 and the second touch electrode 164 composed of Al, Mo/Al/Mo or Ti/Al/Ti.
  • the OLED display panel 100 includes a substrate 11.
  • the substrate 11 includes a first part 111 and a second part 112.
  • the first part 111 corresponds to the display area 10a.
  • the second portion 112 corresponds to the light transmitting area 10b.
  • the thickness of the second portion 112 is smaller than the thickness of the first portion 111.
  • a convex groove 113 is convexly formed on the bottom surface of the substrate 11 corresponding to the light-transmitting region 10 b to form the second portion 112.
  • the thickness of the second portion 112 can be adjusted according to the height of the convex groove 113.
  • the convex groove 113 and the groove 15 are disposed with the central axis.
  • optical devices such as a camera, an optical fingerprint recognition module, etc. need to be arranged below the light-transmitting area 10b, the arrangement of the convex groove 113 and the groove 15 and the central axis is helpful for uniform light reception by the optical device. That is to help the optical device to obtain the largest receiving surface.
  • the area of the orthographic projection of the convex groove 113 on the plane of the substrate 11 is smaller than the area of the orthographic projection of the groove 15 on the plane of the substrate 11.
  • the angle between the bottom surface of the groove 15 and the side wall surface of the groove is an obtuse angle. That is, the groove 15 has a narrow bottom and a wide width.
  • the OLED display panel 100 further includes an optical glue 17 and a cover 18.
  • the optical glue 17 is disposed on the touch function 16 and fills the groove 15.
  • the cover plate 18 is provided on the optical glue 17.
  • the optical glue 17 is made of organic transparent materials such as epoxy resin, silicone or acrylic.
  • FIG. 2 is a schematic structural view of an embodiment of an OLED display panel of the present application formed on a glass substrate.
  • the preparation process of the OLED display panel 100 of this embodiment is:
  • a glass substrate 10 is provided, and a convex structure is provided on the glass substrate 10, and the convex structure corresponds to the light transmitting area 10b of the substrate 11;
  • a substrate 11, a buffer layer 121, an active layer 122, a first gate insulating layer 123, a first gate metal layer 124, a second gate insulating layer 125, and a second gate metal are sequentially formed on the glass substrate 10
  • a trenching process is performed to remove the film layer from the flat layer 129 to the encapsulation layer 14 in the light-transmitting region 10b to form the groove 15.
  • a first insulating layer 161, a first touch electrode 162, a second insulating layer 163, and a second touch electrode 164 are sequentially formed on the encapsulation layer 14 to form the touch function layer 16.
  • the first insulating layer 161 and the second insulating layer 163 continuously cover the groove 15 and the non-groove area.
  • the optical glue 17 is coated on the touch function layer 16 and the optical glue 17 fills the groove 15. And a cover plate 18 is provided on the optical glue 17.
  • the peeling substrate 10 is peeled off the substrate 11 to form the display panel 100 of this embodiment.
  • FIG. 3 is a schematic structural diagram of an embodiment of an OLED display device of the present application.
  • the present application also relates to an OLED display device 1000, which includes the OLED display panel 100 of the embodiment of the above application and an optical device 200 disposed below the light transmitting area 10b.
  • the OLED display panel 100 includes a display area 10a and a light-transmitting area 10b.
  • the optical device 200 is selected from one of a flash, a camera, an infrared sensor, and an optical fingerprint recognition device.
  • the structure of the display panel 100 of the OLED display device 1000 of the present application is the same as the structure of the display panel of the above embodiment, which will not be repeated here.
  • the OLED display panel and the OLED display device of the present application remove the first electrode and the second electrode of the light emitting function layer by providing grooves in the light transmission area, thereby improving the light transmission area Transparency; and by forming a convex groove in the area of the substrate corresponding to the light-transmitting area, the second portion is formed, thereby reducing the thickness of the substrate corresponding to the light-transmitting area and improving the transparency of the portion; in addition, by applying the touch function
  • the first insulating layer or/and the second insulating layer of the layer cover the groove, which improves the packaging effect and solves the problem that the existing OLED display panel cannot avoid the corrosion of the OLED electrodes and materials from the side after water and oxygen are opened Technical issues.

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  • Physics & Mathematics (AREA)
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Abstract

本申请提供一种OLED显示面板及OLED显示装置，其具有显示区和透光区，显示区围设在透光区的周侧；OLED显示面板对应于透光区的区域设置有凹槽，凹槽至少贯穿封装层；封装层上设置有触控功能层，触控功能层覆盖显示区，且至少部分触控功能层自显示区向凹槽延伸并覆盖凹槽。

Description

OLED显示面板及OLED显示装置 技术领域
本申请涉及一种显示技术，特别涉及一种OLED显示面板及OLED显示装置。
 背景技术
随着OLED（Organic Light Emitting Diode，有机发光二极管）技术的逐渐成熟，对OLED的可靠性已经提出了越来越高的要求，如窄边框技术，面板制造业通过COF(Chip On Film), COP(Chip On Plastic)逐渐实现边框小于2mm的OLED显示，而摄像头放置在OLED发光区域的话，这样屏占比会更高。
在现有的显示面板中，一般摄像头内置于显示区域的下方，而对应于该摄像头的放置区域是通过完成整个OLED制程后，通过激光自上而下或自下而上将整个器件打穿，形成一个通孔，并将摄像头设置在对应于通孔的区域，从而实现100%透过率的摄像头内置显示区域技术，然而这种方式无法避免水氧从侧向对OLED电极和材料的侵蚀。
 技术问题
本申请实施例提供一种OLED显示面板及OLED显示装置，以解决现有的OLED显示面板在进行开孔后，无法避免水氧从侧向对OLED电极和材料的侵蚀的技术问题。
 技术解决方案
本申请实施例提供一种OLED显示面板，包括依次设置在基板上的TFT结构层、发光功能层和封装层，其中，
所述OLED显示面板具有显示区和透光区，所述显示区围设在所述透光区的周侧；
所述OLED显示面板对应于所述透光区的区域设置有凹槽，所述凹槽至少贯穿所述封装层、所述发光功能层和部分的所述TFT结构层；
其中所述封装层上设置有触控功能层，所述触控功能层覆盖所述显示区，且至少部分所述触控功能层自所述显示区向所述凹槽延伸并覆盖所述凹槽；
所述OLED显示面板包括一基板，所述基板包括第一部分和第二部分，所述第一部分对应于所述显示区，所述第二部分对应于所述透光区；
所述第二部分的厚度小于所述第一部分的厚度。
在本申请的OLED显示面板中，所述触控功能层包括第一绝缘层、第一触控电极、第二绝缘层和第二触控电极，所述第一绝缘层设置在所述封装层上，所述第一触控电极设置在所述第一绝缘层上，所述第二绝缘层设置在所述第一触控电极上，所述第二触控电极设置在所述第二绝缘层上；
其中所述第一绝缘层或/和所述第二绝缘层覆盖所述凹槽。
在本申请的OLED显示面板中，对应于所述透光区的所述基板的底面凸设一凸槽，以形成所述第二部分。
在本申请的OLED显示面板中，所述凸槽和所述凹槽同中轴线设置。
在本申请的OLED显示面板中，所述凸槽于所述基板所在平面的正投影的面积小于所述凹槽于所述基板所在平面的正投影的面积。
在本申请的OLED显示面板中，在所述凹槽的纵向截面中，所述凹槽的底面和所述凹槽的侧壁面的夹角为钝角。
在本申请的OLED显示面板中，所述TFT结构层包括依次设置在所述基板上的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层；所述发光功能层包括依次设置在所述平坦层上的第一电极、像素隔离层、发光层和第二电极层；
所述透光区包括所述TFT结构层的缓冲层、第一栅极绝缘层、第二栅极绝缘层和第三绝缘层，所述凹槽贯穿所述封装层、所述发光功能层和所述平坦层。
在本申请的OLED显示面板中，所述显示区包括所述TFT结构层的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层、以及所述发光功能层的第一电极、像素隔离层、发光层和第二电极层；
所述封装层设置在所述第二电极层上。
本申请实施例还提供一种OLED显示面板，包括依次设置在基板上的TFT结构层、发光功能层和封装层，其中，
所述OLED显示面板具有显示区和透光区，所述显示区围设在所述透光区的周侧；
所述OLED显示面板对应于所述透光区的区域设置有凹槽，所述凹槽至少贯穿所述封装层；
其中所述封装层上设置有触控功能层，所述触控功能层覆盖所述显示区，且至少部分所述触控功能层自所述显示区向所述凹槽延伸并覆盖所述凹槽。
在本申请的OLED显示面板中，所述凹槽还贯穿所述发光功能层和部分的所述TFT结构层。
在本申请的OLED显示面板中，所述触控功能层包括第一绝缘层、第一触控电极、第二绝缘层和第二触控电极，所述第一绝缘层设置在所述封装层上，所述第一触控电极设置在所述第一绝缘层上，所述第二绝缘层设置在所述第一触控电极上，所述第二触控电极设置在所述第二绝缘层上；
其中所述第一绝缘层或/和所述第二绝缘层覆盖所述凹槽。
在本申请的OLED显示面板中，所述第一绝缘层或/和第二绝缘层为多层结构或单层结构。
在本申请的OLED显示面板中，所述OLED显示面板包括一基板，所述基板包括第一部分和第二部分，所述第一部分对应于所述显示区，所述第二部分对应于所述透光区；
所述第二部分的厚度小于所述第一部分的厚度。
在本申请的OLED显示面板中，对应于所述透光区的所述基板的底面凸设一凸槽，以形成所述第二部分。
在本申请的OLED显示面板中，所述凸槽和所述凹槽同中轴线设置。
在本申请的OLED显示面板中，所述凸槽于所述基板所在平面的正投影的面积小于所述凹槽于所述基板所在平面的正投影的面积。
在本申请的OLED显示面板中，在所述凹槽的纵向截面中，所述凹槽的底面和所述凹槽的侧壁面的夹角为钝角。
在本申请的OLED显示面板中，所述OLED显示面板还包括光学胶和盖板，所述光学胶设置在所述触控功能上并填充所述凹槽，所述盖板设置在所述光学胶上。
在本申请的OLED显示面板中，所述TFT结构层包括依次设置在所述基板上的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层；所述发光功能层包括依次设置在所述平坦层上的第一电极、像素隔离层、发光层和第二电极层；
所述透光区包括所述TFT结构层的缓冲层、第一栅极绝缘层、第二栅极绝缘层以及第三绝缘层，所述凹槽贯穿所述封装层、所述发光功能层和所述平坦层。
在本申请的OLED显示面板中，所述显示区包括所述TFT结构层的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层、以及所述发光功能层的第一电极、像素隔离层、发光层和第二电极层；
所述封装层设置在所述第二电极层上。
本申请实施例又提供一种OLED显示面板，包括依次设置在基板上的TFT结构层、发光功能层和封装层，其中，
所述OLED显示面板具有显示区和透光区，所述显示区围设在所述透光区的周侧；
所述OLED显示面板对应于所述透光区的区域设置有凹槽，所述凹槽贯穿所述封装层、所述发光功能层的第一电极和第二电极，以提高透光区的透明度。
在本申请的OLED显示面板中，所述TFT结构层包括依次设置在所述基板上的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层；
所述发光功能层包括依次设置在所述平坦层上的所述第一电极、像素隔离层、发光层和所述第二电极层；
所述透光区包括所述TFT结构层的缓冲层、第一栅极绝缘层、第二栅极绝缘层以及第三绝缘层，所述凹槽贯穿所述封装层、所述发光功能层和所述平坦层。
在本申请的OLED显示面板中，所述显示区包括所述TFT结构层的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层、以及所述发光功能层的第一电极、像素隔离层、发光层和第二电极层；
所述封装层设置在所述第二电极层上。
在本申请的OLED显示面板中，所述OLED显示面板包括一基板，所述基板包括第一部分和第二部分，所述第一部分对应于所述显示区，所述第二部分对应于所述透光区；
所述第二部分的厚度小于所述第一部分的厚度。
在本申请的OLED显示面板中，对应于所述透光区的所述基板的底面凸设一凸槽，以形成所述第二部分。
在本申请的OLED显示面板中，所述封装层上设置有触控功能层，所述触控功能层覆盖所述显示区，且至少部分所述触控功能层自所述显示区向所述凹槽延伸并覆盖所述凹槽。
在本申请的OLED显示面板中，所述触控功能层包括第一绝缘层、第一触控电极、第二绝缘层和第二触控电极，所述第一绝缘层设置在所述封装层上，所述第一触控电极设置在所述第一绝缘层上，所述第二绝缘层设置在所述第一触控电极上，所述第二触控电极设置在所述第二绝缘层上；
其中所述第一绝缘层或/和所述第二绝缘层覆盖所述凹槽。
在本申请的OLED显示面板中，所述第一绝缘层或/和第二绝缘层为多层结构或单层结构。
在本申请的OLED显示面板中，所述凸槽和所述凹槽同中轴线设置。
在本申请的OLED显示面板中，所述凸槽于所述基板所在平面的正投影的面积小于所述凹槽于所述基板所在平面的正投影的面积。
在本申请的OLED显示面板中，在所述凹槽的纵向截面中，所述凹槽的底面和所述凹槽的侧壁面的夹角为钝角。
在本申请的OLED显示面板中，所述OLED显示面板还包括光学胶和盖板，所述光学胶设置在所述触控功能上并填充所述凹槽，所述盖板设置在所述光学胶上。
本申请还涉及一种OLED显示装置，其包括上述申请的OLED显示面板和设置在所述透光区下方的光学器件。
所述光学器件选自闪光灯、摄像头、红外传感器和光学指纹识别器件中的一种。
 有益效果
相较于现有技术的OLED显示面板，本申请的OLED显示面板及OLED显示装置通过在透光区设置凹槽，去除了发光功能层的第一电极和第二电极，进而提高了透光区的透明度；且通过在基板对应于透光区的区域设置凸槽，形成第二部分，从而减少了对应于透光区的基板的厚度，提高了该部分的透明度；另外，通过将触控功能层的第一绝缘层或/和第二绝缘层覆盖凹槽，提高了封装效果，解决了现有的OLED显示面板在进行开孔后，无法避免水氧从侧向对OLED电极和材料的侵蚀的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请的OLED显示面板的实施例的结构示意图；
图2为本申请的OLED显示面板的实施例形成在玻璃基底上的结构示意图；
图3为本申请的OLED显示装置的实施例的结构示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1，图1为本申请的OLED显示面板的实施例的结构示意图。本申请实施例的OLED显示面板100，其包括依次设置在基板11上的TFT（Thin Film Transistor）结构层12、发光功能层13和封装层14。
OLED显示面板100具有显示区10a和透光区10b。显示区10a围设在透光区10b的周侧。
OLED显示面板100对应于透光区10b的区域设置有凹槽15。凹槽15至少贯穿封装层14、发光功能层13和部分的TFT结构层12。
其中封装层14上设置有触控功能层16。触控功能层16覆盖显示区10a，且至少部分触控功能层16自显示区10a向凹槽15延伸并覆盖凹槽15。
本实施例的OLED显示面板100通过在透光区10b设置凹槽15，使得透光区10b去除了发光功能层13的第一电极131和第二电极134，进而提高了透光区10b的透明度。且通过在基板11对应于透光区10b的区域设置凸槽113，形成第二部分112，从而减少了对应于透光区10b的基板11的厚度，提高了该部分的透明度。其中透光区10不发光。
在一些实施例中，凹槽贯穿封装层，由于凹槽仅贯穿封装层，使得透光区中的TFT结构层和发光功能层是完整的，因此透光区具有发光功能。
或者，凹槽仅贯穿封装层，而透光区也可以不包括发光功能层的阳极、阴极和有机发光层，甚至不包括TFT结构层中的金属膜层（比如栅极金属层、源漏金属层等）等。此时透光区不具有发光功能的。
另外，本实施例通过将触控功能层16的第一绝缘层161或/和第二绝缘层163覆盖凹槽15，提高了封装效果，避免了水氧从凹槽15处入侵显示区10a。
在一些实施例中，TFT结构层12包括依次设置在基板11上的缓冲层121、有源层122、第一栅极绝缘层123、第一栅极金属层124、第二栅极绝缘层125、第二栅极金属层126、第三绝缘层127、源漏金属层128和平坦层129。发光功能层13包括依次设置在平坦层129上的第一电极131、像素隔离层132、发光层133和第二电极层134。
显示区10a包括基板11、TFT结构层12的缓冲层121、有源层122、第一栅极绝缘层123、第一栅极金属层124、第二栅极绝缘层125、第二栅极金属层126、第三绝缘层127、源漏金属层128和平坦层129、以及发光功能层13的第一电极131、像素隔离层132、发光层133和第二电极层134。
封装层14设置在第二电极层134上。
透光区10b包括基板11、TFT结构层12的缓冲层121、第一栅极绝缘层123、第二栅极绝缘层125和第三绝缘层127。凹槽15贯穿封装层14、发光功能层13和平坦层129。
在另一些实施例中，凹槽自上而下贯穿封装层、发光功能层、平坦层以及贯穿至位于所述平坦层和基板之间的任一膜层。而相应的透光区的结构也略作膜层增减的调整。
在一些实施例中，基板11为聚酰亚胺、聚酯类的柔性衬底。缓冲层121、第一栅极绝缘层123、第二栅极绝缘层125和第三绝缘层127均为SiN x/SiO x等无机材料构成。有源层122为低温多晶硅构成。第一栅极金属层124和第二栅极金属层126为Mo等金属材料构成。源漏金属层128为Ti/Al/Ti构成。平坦层129为聚酰亚胺类材料构成。
第一电极131为ITO/Ag/ITO或IZO/Ag/IZO构成。像素隔离层132为聚酰亚胺类材料构成。发光层133为小分子或聚合物构成。第二电极134为Mg/Ag构成。
封装层14由于无机层和有机层交替叠加构成。
在一些实施例中，触控功能层16包括第一绝缘层161、第一触控电极162、第二绝缘层163和第二触控电极164。第一绝缘层161设置在封装层14上。第一触控电极162设置在第一绝缘层161上。第二绝缘层163设置在第一触控电极162上。第二触控电极164设置在第二绝缘层163上。
其中第一绝缘层161或/和第二绝缘层163覆盖凹槽15。采用第一绝缘层161或/和第二绝缘层163覆盖15，起到封装凹槽15的作用，避免了水氧从凹槽15处入侵显示区10a。
其中，第一绝缘层161和第二绝缘层163共同覆盖凹槽15。提高了封装凹槽15的效果，进而提高了防止水氧入侵显示区10a的性能。
在一些实施例中，第一绝缘层161或/和第二绝缘层163为多层结构或单层结构。当第一绝缘层161和第二绝缘层163为多层结构时，提高了封装效果。
在一些实施例中，SiNx或SiONx构成的第一绝缘层161和第二绝缘层163。Mo，Ag, Ti, Cu, Al,Mo/Al/Mo 或Ti/Al/Ti构成的第一触控电极162和第二触控电极164。
在一些实施例中，OLED显示面板100包括一基板11。基板11包括第一部分111和第二部分112。第一部分111对应于显示区10a。第二部分112对应于透光区10b。第二部分112的厚度小于第一部分111的厚度。这样的设置，以降低透光区10b处的基板11厚度，从而提高了该部分的透光度。
在一些实施例中，对应于透光区10b的基板11的底面凸设一凸槽113，以形成第二部分112。其中第二部分112的厚度可根据凸槽113的高度进行调节。
在一些实施例中，凸槽113和凹槽15同中轴线设置。其中当需要在透光区10b的下方设置光学器件，比如摄像头、光学指纹识别模块等时，凸槽113和凹槽15同中轴线设置的设置，有利于光线均匀的被光学器件接收。即有利于光学器件获取最大的接收面。
在一些实施例中，凸槽113于基板11所在平面的正投影的面积小于凹槽15于基板11所在平面的正投影的面积。其中当需要在透光区10b的下方设置光学器件，比如摄像头、光学指纹识别模块等时，上述面积关系的设置，便于光学器件接收更多的光线。
在一些实施例中，在凹槽15的纵向截面中，凹槽15的底面和凹槽的侧壁面的夹角为钝角。即凹槽15为下窄上宽状，一方面有利于沉积第一绝缘层161和第三绝缘层163，另一方面可提高采光率。
在一些实施例中，OLED显示面板100还包括光学胶17和盖板18。光学胶17设置在触控功能16上并填充凹槽15。盖板18设置在光学胶17上。其中光学胶17为环氧树脂、有机硅或亚克力等有机透明材料构成。
请参照图2，图2为本申请的OLED显示面板的实施例形成在玻璃基底上的结构示意图。本实施例的OLED显示面板100的制备过程是：
首先，提供一玻璃基底10，玻璃基底10上设置有一凸状结构，该凸状结构对应于基板11的透光区10b；
然后，在玻璃基底10上依次形成基板11、缓冲层121、有源层122、第一栅极绝缘层123、第一栅极金属层124、第二栅极绝缘层125、第二栅极金属层126、第三绝缘层127、源漏金属层128、平坦层129、第一电极131、像素隔离层132、发光层133、第二电极134和封装层14。
其次，在对应于透光区10b处，进行挖槽处理，去除透光区10b中平坦层129至封装层14的膜层，以形成凹槽15。
随后，在封装层14上依次形成第一绝缘层161、第一触控电极162、第二绝缘层163和第二触控电极164，以形成触控功能层16。其中，第一绝缘层161和第二绝缘层163连续覆盖凹槽15以及非凹槽区域。
接着，在触控功能层16上涂布光学胶17，并使光学胶17填充凹槽15。并在光学胶17上设置盖板18。
最后，通过激光剥离工艺，将剥离基板10剥离基板11，以形成本实施例的显示面板100。
这样便完成了本实施例的制备过程。
请参照图3，图3为本申请的OLED显示装置的实施例的结构示意图。本申请还涉及一种OLED显示装置1000，其包括上述申请实施例的OLED显示面板100和设置在透光区10b下方的光学器件200。其中，OLED显示面板100包括显示区10a和透光区10b。
光学器件200选自闪光灯、摄像头、红外传感器和光学指纹识别器件中的一种。
其中本申请的OLED显示装置1000的显示面板100的结构与上述实施例的显示面板的结构相同，在此不再赘述。
相较于现有技术的OLED显示面板，本申请的OLED显示面板及OLED显示装置通过在透光区设置凹槽，去除了发光功能层的第一电极和第二电极，进而提高了透光区的透明度；且通过在基板对应于透光区的区域设置凸槽，形成第二部分，从而减少了对应于透光区的基板的厚度，提高了该部分的透明度；另外，通过将触控功能层的第一绝缘层或/和第二绝缘层覆盖凹槽，提高了封装效果，解决了现有的OLED显示面板在进行开孔后，无法避免水氧从侧向对OLED电极和材料的侵蚀的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (20)

  1. 一种OLED显示面板，包括依次设置在基板上的TFT结构层、发光功能层和封装层，其中，
    所述OLED显示面板具有显示区和透光区，所述显示区围设在所述透光区的周侧；
    所述OLED显示面板对应于所述透光区的区域设置有凹槽，所述凹槽至少贯穿所述封装层、所述发光功能层和部分的所述TFT结构层；
    其中所述封装层上设置有触控功能层，所述触控功能层覆盖所述显示区，且至少部分所述触控功能层自所述显示区向所述凹槽延伸并覆盖所述凹槽；
    所述OLED显示面板包括一基板，所述基板包括第一部分和第二部分，所述第一部分对应于所述显示区，所述第二部分对应于所述透光区；
    所述第二部分的厚度小于所述第一部分的厚度。
  2. 根据权利要求1所述的OLED显示面板，其中，所述触控功能层包括第一绝缘层、第一触控电极、第二绝缘层和第二触控电极，所述第一绝缘层设置在所述封装层上，所述第一触控电极设置在所述第一绝缘层上，所述第二绝缘层设置在所述第一触控电极上，所述第二触控电极设置在所述第二绝缘层上；
    其中所述第一绝缘层或/和所述第二绝缘层覆盖所述凹槽。
  3. 根据权利要求1所述的OLED显示面板，其中，对应于所述透光区的所述基板的底面凸设一凸槽，以形成所述第二部分。
  4. 根据权利要求3所述的OLED显示面板，其中，所述凸槽和所述凹槽同中轴线设置。
  5. 根据权利要求3所述的OLED显示面板，其中，所述凸槽于所述基板所在平面的正投影的面积小于所述凹槽于所述基板所在平面的正投影的面积。
  6. 根据权利要求1所述的OLED显示面板，其中，在所述凹槽的纵向截面中，所述凹槽的底面和所述凹槽的侧壁面的夹角为钝角。
  7. 根据权利要求1所述的OLED显示面板，其中，所述TFT结构层包括依次设置在所述基板上的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层；所述发光功能层包括依次设置在所述平坦层上的第一电极、像素隔离层、发光层和第二电极层；
    所述透光区包括所述TFT结构层的缓冲层、第一栅极绝缘层、第二栅极绝缘层和第三绝缘层，所述凹槽贯穿所述封装层、所述发光功能层和所述平坦层。
  8. 一种OLED显示面板，包括依次设置在基板上的TFT结构层、发光功能层和封装层，其中，
    所述OLED显示面板具有显示区和透光区，所述显示区围设在所述透光区的周侧；
    所述OLED显示面板对应于所述透光区的区域设置有凹槽，所述凹槽至少贯穿所述封装层；
    其中所述封装层上设置有触控功能层，所述触控功能层覆盖所述显示区，且至少部分所述触控功能层自所述显示区向所述凹槽延伸并覆盖所述凹槽。
  9. 根据权利要求8所述的OLED显示面板，其中，所述凹槽还贯穿所述发光功能层和部分的所述TFT结构层。
  10. 根据权利要求9所述的OLED显示面板，其中，所述触控功能层包括第一绝缘层、第一触控电极、第二绝缘层和第二触控电极，所述第一绝缘层设置在所述封装层上，所述第一触控电极设置在所述第一绝缘层上，所述第二绝缘层设置在所述第一触控电极上，所述第二触控电极设置在所述第二绝缘层上；
    其中所述第一绝缘层或/和所述第二绝缘层覆盖所述凹槽。
  11. 根据权利要求10所述的OLED显示面板，其中，所述第一绝缘层或/和第二绝缘层为多层结构或单层结构。
  12. 根据权利要求8所述的OLED显示面板，其中，所述OLED显示面板包括一基板，所述基板包括第一部分和第二部分，所述第一部分对应于所述显示区，所述第二部分对应于所述透光区；
    所述第二部分的厚度小于所述第一部分的厚度。
  13. 根据权利要求12所述的OLED显示面板，其中，对应于所述透光区的所述基板的底面凸设一凸槽，以形成所述第二部分。
  14. 根据权利要求13所述的OLED显示面板，其中，所述凸槽和所述凹槽同中轴线设置。
  15. 根据权利要求14所述的OLED显示面板，其中，所述凸槽于所述基板所在平面的正投影的面积小于所述凹槽于所述基板所在平面的正投影的面积。
  16. 根据权利要求8所述的OLED显示面板，其中，在所述凹槽的纵向截面中，所述凹槽的底面和所述凹槽的侧壁面的夹角为钝角。
  17. 根据权利要求8所述的OLED显示面板，其中，所述OLED显示面板还包括光学胶和盖板，所述光学胶设置在所述触控功能上并填充所述凹槽，所述盖板设置在所述光学胶上。
  18. 根据权利要求8所述的OLED显示面板，其中，所述TFT结构层包括依次设置在所述基板上的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层；所述发光功能层包括依次设置在所述平坦层上的第一电极、像素隔离层、发光层和第二电极层；
    所述透光区包括所述TFT结构层的缓冲层、第一栅极绝缘层、第二栅极绝缘层和第三绝缘层，所述凹槽贯穿所述封装层、所述发光功能层和所述平坦层。
  19. 根据权利要求18所述的OLED显示面板，其中，所述显示区包括所述TFT结构层的缓冲层、有源层、第一栅极绝缘层、第一栅极金属层、第二栅极绝缘层、第二栅极金属层、第三绝缘层、源漏金属层和平坦层、以及所述发光功能层的第一电极、像素隔离层、发光层和第二电极层；
    所述封装层设置在所述第二电极层上。
  20. 一种OLED显示装置，其中，包括权利要求1的所述OLED显示面板和设置在所述透光区下方的光学器件。
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