WO2020126041A1 - Appareil de dépôt en phase vapeur et procédé de revêtement d'un substrat dans une chambre sous vide - Google Patents

Appareil de dépôt en phase vapeur et procédé de revêtement d'un substrat dans une chambre sous vide Download PDF

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Publication number
WO2020126041A1
WO2020126041A1 PCT/EP2018/086640 EP2018086640W WO2020126041A1 WO 2020126041 A1 WO2020126041 A1 WO 2020126041A1 EP 2018086640 W EP2018086640 W EP 2018086640W WO 2020126041 A1 WO2020126041 A1 WO 2020126041A1
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WO
WIPO (PCT)
Prior art keywords
shield
evaporator
temperature
vacuum chamber
heat shield
Prior art date
Application number
PCT/EP2018/086640
Other languages
English (en)
Inventor
Andreas Lopp
Stefan Bangert
David Ishikawa
Bahubali S. UPADHYE
Sumedh Acharya
Visweswaren Sivaramakrishnan
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201880100385.5A priority Critical patent/CN113227436A/zh
Priority to EP18826382.6A priority patent/EP3899085A1/fr
Priority to KR1020217022796A priority patent/KR20210103546A/ko
Priority to JP2021534962A priority patent/JP7309882B2/ja
Priority to PCT/EP2018/086640 priority patent/WO2020126041A1/fr
Publication of WO2020126041A1 publication Critical patent/WO2020126041A1/fr
Priority to JP2023024108A priority patent/JP2023075126A/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Definitions

  • Embodiments of the present disclosure relate to substrate coating by thermal evaporation in a vacuum chamber. Embodiments of the present disclosure further relate to condensates formed on surfaces of a vacuum deposition apparatus. Specifically, embodiments relate to a vapor deposition apparatus, and a method for coating a substrate in a vacuum chamber.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • thermal evaporation may be used as a PVD process.
  • a source material is heated up to produce a vapor that may be deposited, for example, on a substrate.
  • Increasing the temperature of the heated source material increases the vapor concentration and can facilitate high deposition rates.
  • the temperature for achieving high deposition rates depends on the source material physical properties, e.g. vapor pressure as a function of temperature, and substrate physical limits, e.g. melting point.
  • the source material to be deposited on the substrate can be heated in a crucible to produce vapor at an elevated vapor pressure.
  • the vapor can be transported from the crucible to a coating volume in a heated manifold.
  • the source material vapor can be distributed from the heated manifold onto a substrate in a coating volume, for example, a vacuum chamber.
  • source material on deposition apparatus components which are not intended to be coated, may become contaminated and/or unsalvageable. Accordingly, costs for operating a vacuum deposition apparatus may be further increased due to inefficient source material utilization.
  • a vapor deposition apparatus includes a vacuum chamber having chamber walls; a temperature controlled shield configured to shield the chamber walls; a heat shield facing a substrate to be coated, the heat shield having one or more openings; and an evaporator at least partially within the vacuum chamber, the evaporator comprising: one or more nozzles extending through the one or more openings.
  • a method for coating a substrate in a vacuum chamber includes evaporating material in the vacuum chamber; shielding at least a portion of an evaporator with a heat shield, the heat shield having openings forming passages; and shielding chamber walls of the vacuum chamber with a temperature controlled shield, wherein a temperature of the evaporator is higher than a temperature of the temperature controlled shield.
  • a method for coating a substrate in a vacuum chamber includes evaporating material in the vacuum chamber; shielding chamber walls of the vacuum chamber with a temperature controlled shield, wherein a temperature of the evaporator is higher than a temperature of the temperature controlled shield; and shielding at least a portion of an evaporator with a heat shield being passively heated and wherein the temperature of the evaporator is higher than the temperature of the heat shield.
  • FIG. 1A shows a schematic view of a vapor deposition apparatus having one or more temperature controlled shields or heat shields according to embodiments of the present disclosure
  • FIG. IB shows a schematic view of a further vapor deposition apparatus having one or more temperature controlled shields or heated shields or heat shields according to embodiments of the present disclosure
  • FIG. 2 shows a perspective view of a frame-like heated shield and a heat shield according to embodiments of the present disclosure
  • FIG. 3 shows a schematic view of a further vapor deposition apparatus having one or more temperature controlled shields or heated shield or heat shields according to embodiments of the present disclosure
  • FIG. 4 shows a schematic view of a further vapor deposition apparatus being a roll-to-roll deposition apparatus according to embodiments of the present disclosure.
  • FIG. 5 shows a flowchart for illustrating a method of coating a substrate in a vacuum chamber according to embodiments described herein.
  • apparatuses and methods for coating by evaporation in the vacuum chamber are provided.
  • the source material may be heated above the evaporation or sublimation temperature of the source material.
  • Embodiments of the present disclosure result in reduced condensation on surfaces, for example surfaces other than the substrate that may have lower temperatures. Such surfaces may for example be a chamber wall.
  • Embodiments of the present disclosure provide a temperature controlled coating chamber environment, for example, to prevent coating (e.g. stray coating) on shields, masks, and chamber walls. Accordingly, advantageously improved substrate coating quality and yield in addition to longer operation times between preventative maintenance cycles can be provided.
  • coating e.g. stray coating
  • a method for coating a substrate in a vacuum chamber includes evaporating source material in the vacuum chamber. At least a portion of an evaporator is shielded with a heat shield, the heat shield having openings forming passages. Chamber walls of the vacuum chamber are shielded with a temperature controlled shield, wherein the temperature of the evaporator is higher than a temperature of the shield.
  • a vapor deposition apparatus includes a vacuum chamber having chamber walls. An evaporator is provided within the vacuum chamber. A heat shield arranged to face a substrate to be coated and having openings forming passages is provided. The evaporator comprises nozzles extending through the passages of the heat shield. The apparatus further includes a temperature controlled shield between an interior of the vacuum chamber and the chamber walls.
  • FIG. 1A shows a vacuum deposition apparatus 100.
  • the vacuum deposition apparatus 100 includes a vacuum chamber 105.
  • the vacuum chamber 105 includes one or more chamber walls 150.
  • an evaporator 135 can be provided in the vacuum chamber 105 or can at least partially be provided in the vacuum chamber 105.
  • FIG 1A shows a distributor 133 of an evaporator.
  • the distributor may distribute vapor provided in the distributor, for example, through an inlet opening 101.
  • the distributor may have one or more openings 182. Vapor of the source material to be deposited can exit the distributor 133 through the openings.
  • the source material is deposited on a substrate 110.
  • one or more nozzles 136 can be provided at the one or more openings 182, respectively.
  • the distributor 133 is provided at a lower portion of the vacuum chamber 105 and the substrate 110 is provided at an upper portion.
  • the source material to be deposited is guided from the lower portion to the upper portion.
  • One or more side walls 150 extend from the distributor 133, i.e. from the lower portion of the vacuum chamber 105, to a substrate position, i.e. an upper portion of the vacuum chamber 105.
  • one or more chamber walls of the vacuum chamber can be provided between the evaporator and the substrate position.
  • the sidewalls 150 can be protected from coating by a temperature controlled shield or frame 140.
  • the temperature controlled shield may be heated. Accordingly, material or source material being deposited on the heated shield can be re-evaporated.
  • the temperature controlled shield or heated shield may cover one or more chamber walls.
  • the heated shield may cover the plurality of chamber walls.
  • the heated shield can be a frame or a temperature controlled frame.
  • the heated shield may surround a deposition zone, through which evaporated material is guided towards the substrate.
  • the heated shield can form a continuous surface.
  • the heated shield may be thermally conductive to facilitate a homogenous or even heating of the heated shield.
  • the vapor deposition apparatus comprises a controller connected to a heater section heating the temperature shield or heated shield.
  • the controller controls the heated shield temperature to be lower than the temperature of the evaporator.
  • the heater section can be configured to heat up the heated shield, in particular to generate heat wherein the generated heat is transferred to the heated shield.
  • the heater section can be, for example, arranged at the heated shield. Being arranged at the heated shield can be also understood as being in direct and/or physical contact with the heated shield.
  • the heater section can, for example, include a heating coil, a heating tube, heating struts, heating lamps or the like.
  • the heater section can be arranged on the outer surface of the heated shield, wherein the outer surface of the heated shield faces the chamber walls and the inner surface of the heated shield faces the interior of the vacuum chamber.
  • the heater section can also be integrated within the heated shield, in particular be arranged within the heated shield.
  • FIG. IB shows a schematic view of a further vapor deposition apparatus having one or more frames or heated shields according to embodiments of the present disclosure.
  • a material 170 i.e. a source material, to be deposited is evaporated within the crucible 160 by heating the material 170.
  • the material 170 can include, for example, metal, in particular lithium, metal alloys, and other vaporizable materials or the like which have a gaseous phase under given conditions.
  • the material may include magnesium (Mg), ytterbium (YB) and lithium fluoride (LiF).
  • the evaporated material generated in the crucible 160 can enter a distributor 133 along the direction represented by the arrow 137c.
  • the distributor 133 can, for example, include a channel or a tube which provides a transport system to distribute the evaporated material along the width and/or the length of the deposition apparatus.
  • the distributor can have the design of a“shower head reactor”.
  • the evaporated source material can be guided within the distributor 133 towards the respective chamber walls 150 along the directions 137a and 137b.
  • the direction 137a and 137b can be essentially parallel to a flat substrate 110, in particular parallel to the surface 110a of a flat substrate 110.
  • the direction 137a and 137b may be parallel to an axis of the coating drum or may be parallel to a tangent of the coating drum at the shortest distance of the source and the drum.
  • the evaporated material is ejected from the evaporator 135 by means of nozzles 136 to the interior 145 of the vacuum chamber 105.
  • the nozzles 136 are arranged within the openings 182 of the heat shield 180.
  • the evaporated material 185 ejected by the nozzles 136 is deposited on the surface 110a of the substrate 110 to form a coating for the substrate 110.
  • the heat shield 180 reduces the radiant heat coming from the evaporator, for example, the distributor 133, towards the substrate.
  • the heat shield 180 includes openings 182.
  • the nozzles 136 of the distributor 133 can extend through the openings of the heat shield 180.
  • the opening of the heat shield may be larger than a corresponding dimension of the nozzle.
  • the opening size of the nozzle can be large enough as compared to the nozzle dimension to further allow for thermal expansion.
  • a nozzle of the distributor or the evaporator may not be in mechanical contact with the heat shield, particularly not in direct mechanical contact. Thus, temperature transfer from the evaporator to the heat shield by conductance can be reduced or avoided, for example, the heat shield may be supported with thermal insulators.
  • the nozzles protrude from the heat shield.
  • the nozzles can protrude through the openings and protrude from the surface of the heat shield.
  • the ratio between the nozzle lengths defined by the upper ends 136a of the nozzles 136 and the side wall 134 of the distributor 133, and a distance defined by the heat shield 180 and the side wall 134 can be at least 1.1, in particular at least 1.3, or more particularly at least 1.5.
  • the nozzle length is advantageously short, e.g. with a ratio of 3 or below to provide good heat conductance to the nozzle tip.
  • the ratio between the area of the side wall of the distributor and the area of a surface of the interior of the vacuum chamber covered by the nozzles is at least 10:1, in particular at least 20:1 or more particularly over 50:1.
  • the pressure within the distributor can be much higher than the pressure within the interior of the vacuum chamber.
  • the pressure within the distributor can be at least 10 times higher than the pressure within the interior of the vacuum chamber, in particular at least 50 times higher, or more particularly more than 100 times higher.
  • the evaporated material can include or can consist of lithium, Yb, or LiF.
  • the temperature of the evaporator and/or of the nozzles can be at least 600 °C, or particularly between 600 C° and 1000 C°, or more particularly between 600 °C and 800 °C.
  • the temperature of the heated shield can be between 450 °C and 550 °C, particularly around 500 °C with a deviation of +/ 10 °C.
  • the temperature of the heated shield is lower than the temperature of the evaporator by at least 100 °C, in particular is lower up to 300 °C, more particularly is lower by at least 100 °C and up to 300 °C.
  • the heat shield comprises two or more heat shield layers.
  • the heat shield layers can be arranged spaced apart from each other. By arranging the heat shield layers spaced apart from each other, the heat shielding effect can be increased. Furthermore, the heatshield layers can also be made of different materials having different heat conduction coefficients.
  • the temperature of the lower heat shield layer facing the side wall of the distributor can be higher than the upper heat shield layer facing the substrate.
  • the heat shield layers can be, for example, arranged, in particular attached on the side wall of the distributor by fixing pins.
  • the pins can include heat isolating materials like isolating alloys or ceramics.
  • the heat shield includes 1 to 10 heat shield layers.
  • one heat shield layer can for example be a metal sheet or a steel sheet.
  • the thickness of a heat shield layer can be between 0.1mm and 1mm, more particularly between 0.2 mm and 0.5 mm.
  • the heat shield is arranged between the side wall and the substrate.
  • the heat shield can be closer to the evaporator than to the substrate.
  • the heat shield is passively heated by the side wall of the evaporator, for example by radiation.
  • the heat shield can, for example, be heated by the radiant heat from the side wall of the evaporator, in particular, of the distributor.
  • the term“passively” can be understood that the heat shield is heated by other components of the vacuum deposition apparatuses exclusively.
  • the heat shield can be, for example, configured to absorb, to reflect and/or to shield the heat, in particular the radiant heat of the side wall of the evaporator.
  • the material which is deposited on the surface of the heat shield for example, by stray coating can also be re-evaporated.
  • the stray coated material on the heat shield can be advantageously removed by re-evaporation as described herein.
  • the coating on the substrate can also be made more uniform.
  • FIG. 2 shows a perspective view of a frame-like shielding and a heat shield 180 according to embodiments of the present disclosure.
  • the heated shield forms a frame 140 which is rectangular and/or square shaped.
  • the frame 140 is arranged on top of the heat shield 180.
  • the heat shield 180 can form a flat or even upper surface 183.
  • the frame 140 encloses the outer perimeter of the heat shield 180.
  • the frame 140 is exposed with the inner side 142 of the frame 140 to the interior of the vacuum chamber.
  • the distance between the upper edge 143 of the frame 140 with respect to the upper surface 183 of the heat shield 180 can be greater than the distance between the upper edge of the frame 140 and the substrate (not shown).
  • the shape of the frame and/or the heat shield is configured to provide a plurality of openings or nozzles. For example, at least four rows of openings or nozzles can be provided. Additionally or alternatively, an array or pattern of openings and/or nozzles may be provided, wherein four or more openings and/or nozzles are arranged in two different directions, e.g. orthogonal directions.
  • the heated shield covers a major portion of the chamber walls facing to the interior of the vacuum chamber between the evaporator and the substrate.
  • a major portion can be understood such that the heated shield covers at least 50%, in particular at least 75%, or more particularly over 90% of the area of the total chamber wall area between the evaporator and the substrate.
  • the controller is configured to actively control the temperature of the heated shield. Actively controlling can include controlling the electrical power supplied to the heater sections and/or can include controlling the flow rate of a heating liquid supplied to the heater sections.
  • the controller can be further configured to measure the temperature within the evaporator, the crucible, the heat shield and/or the heated shield. Furthermore, the controller can also be configured to measure the pressure within the evaporator and the interior of the vacuum chamber. Moreover, the controller can be configured to control the evaporation rate within the crucible and/or the evaporator and/or the deposition rate of the evaporated material on the substrate.
  • the respective parameters can be, for example, the temperature, the rate, and pressure. The respective parameters can be, for example, measured by sensors arranged at the respective components of the vacuum chambers.
  • FIG. 3 shows a schematic view of a further vapor deposition apparatus having one or more frames or shields according to embodiments of the present disclosure.
  • the apparatus have in contrast to the vapor deposition apparatus shown in FIG. 1A a vertical processing direction.
  • the vacuum chamber 105 is connected to a vacuum pump 210.
  • the vertically oriented distributor 133 is covered by the heat shield 180 facing the surface 100a of the substrate 110.
  • the material is heated in a crucible 160 and flows through the distributor and enters the interior 145 of the vacuum chamber 105 through the nozzles 136.
  • the material can be re-evaporated by the heat shield 140 as well as by the heat shield 180 according to embodiments as described herein.
  • FIG. 4 shows a schematic view of a further vapor deposition apparatus 400 being a roll-to-roll deposition apparatus according to embodiments of the present disclosure.
  • the substrate to be deposited can be a web 410 or a foil which is guided by two drums 450 through the vacuum chamber 105.
  • the web 410 can be moved along the interior 145 of the vacuum chamber facing the side wall 134 and the nozzles 136 of the distributor 133.
  • the substrate in this exemplary vapor deposition apparatus 400 can be a web 410.
  • the components of the vapor deposition apparatuses and processes are similar to the components and the processes described in other embodiments herein. [0041] FIG.
  • FIG. 5 shows a flowchart for illustrating a method of coating a substrate in a vacuum chamber according to embodiments described herein.
  • material is evaporated, for example by an evaporator including a crucible as described herein.
  • a heat shield according to embodiments as described herein.
  • the chamber walls of the vacuum chamber are shielded with a temperature controlled heated shield, wherein a temperature of the evaporator is higher than a temperature of the heated shield according to embodiments as described herein.
  • the temperature of the temperature controlled shield is actively controlled. According to embodiments which can be combined with other embodiments described herein, the temperature of the temperature controlled or heated shield is set lower than the temperature of the evaporator.
  • the nozzles extending through the passages of the substrate of the heat shield provide outlets for the evaporated material, wherein the evaporated material can be transferred from the evaporator to the interior of the vacuum chamber.
  • the nozzles can enable a difference in pressure, in particular in vapor pressure, between the interior of the chamber and the evaporator.
  • the nozzles can enable the gas pressure within the interior of the vacuum chamber to be lower than the vapor pressure within the evaporator.
  • the temperature controlled shield can improve the deposition process within the interior of the vacuum chamber.
  • the temperature of the temperature controlled shield can be high enough to reduce the condensation of the evaporated material on the chamber walls.
  • the temperature of the temperature controlled or heated shield can also be low enough to keep the heat load for the substrate low.
  • stray coated material on the heated shield can be re evaporated to be deposited on the substrate.
  • the coating on the substrate can also be made more uniform.
  • the heat shield according to embodiments described herein can lower the heat load from the evaporator directed towards the substrate as described herein, and the substrate can be arranged closer to the evaporator which enables a smaller and more compact design of the vacuum chamber. Further, the evaporator can be operated with higher temperatures without damaging the substrate by radiant heat. Furthermore, the material loss due to the stray coating on other components than the substrate inside the vacuum chamber, for example on masks, shields and chamber walls or the like, can be reduced by the re-evaporation on the heat shield and the heated shield. Less stray coating can lead to higher machine uptime between maintenance cycles and can result in a higher material utilization.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil de dépôt en phase vapeur. L'appareil de dépôt en phase vapeur comprend une chambre sous vide ayant des parois de chambre ; un écran à température contrôlée conçu pour protéger les parois de chambre ; un écran thermique faisant face à un substrat à revêtir, l'écran thermique ayant une ou plusieurs ouvertures ; et un évaporateur situé au moins partiellement à l'intérieur de la chambre sous vide, l'évaporateur comprenant une ou plusieurs buses s'étendant à travers la ou les ouvertures.
PCT/EP2018/086640 2018-12-21 2018-12-21 Appareil de dépôt en phase vapeur et procédé de revêtement d'un substrat dans une chambre sous vide WO2020126041A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201880100385.5A CN113227436A (zh) 2018-12-21 2018-12-21 气相沉积装置和用于在真空腔室中涂布基板的方法
EP18826382.6A EP3899085A1 (fr) 2018-12-21 2018-12-21 Appareil de dépôt en phase vapeur et procédé de revêtement d'un substrat dans une chambre sous vide
KR1020217022796A KR20210103546A (ko) 2018-12-21 2018-12-21 기상 증착 장치 및 진공 챔버에서 기판을 코팅하기 위한 방법
JP2021534962A JP7309882B2 (ja) 2018-12-21 2018-12-21 真空チャンバ内で基板をコーティングするための気相堆積装置及び方法
PCT/EP2018/086640 WO2020126041A1 (fr) 2018-12-21 2018-12-21 Appareil de dépôt en phase vapeur et procédé de revêtement d'un substrat dans une chambre sous vide
JP2023024108A JP2023075126A (ja) 2018-12-21 2023-02-20 真空チャンバ内で基板をコーティングするための気相堆積装置及び方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2018/086640 WO2020126041A1 (fr) 2018-12-21 2018-12-21 Appareil de dépôt en phase vapeur et procédé de revêtement d'un substrat dans une chambre sous vide

Publications (1)

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WO2020126041A1 true WO2020126041A1 (fr) 2020-06-25

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PCT/EP2018/086640 WO2020126041A1 (fr) 2018-12-21 2018-12-21 Appareil de dépôt en phase vapeur et procédé de revêtement d'un substrat dans une chambre sous vide

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