WO2020125004A1 - 高屏占比有机发光二极管显示面板 - Google Patents

高屏占比有机发光二极管显示面板 Download PDF

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Publication number
WO2020125004A1
WO2020125004A1 PCT/CN2019/096461 CN2019096461W WO2020125004A1 WO 2020125004 A1 WO2020125004 A1 WO 2020125004A1 CN 2019096461 W CN2019096461 W CN 2019096461W WO 2020125004 A1 WO2020125004 A1 WO 2020125004A1
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layer
metal wire
organic
organic light
emitting diode
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PCT/CN2019/096461
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English (en)
French (fr)
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孙业熙
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武汉华星光电半导体显示技术有限公司
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Priority to US16/603,436 priority Critical patent/US20220037444A1/en
Publication of WO2020125004A1 publication Critical patent/WO2020125004A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to the field of display technology, and in particular to an organic light-emitting diode (OLED) display panel.
  • OLED organic light-emitting diode
  • the organic light emitting display device has many advantages, such as a wide viewing angle, high reaction speed, thin and light thickness, and low power consumption, making the organic light emitting display device widely used in various electronic devices.
  • full screen display that pursues a high screen ratio and ultra-narrow borders has become a hot spot in the field of organic light-emitting diode (OLED) displays.
  • OLED organic light-emitting diode
  • an organic light-emitting diode (OLED) display panel including:
  • the display area is used to display images; the transparent area is used to place the device; and the wire change area is located at the junction of the display area and the transparent area wire connection; wherein, the metal wire from the display area is located at the line change
  • the area is electrically connected to the high-transmittance metal wire extending to the transparent area through vias.
  • the high light-transmitting metal wire is composed of at least one of indium gallium zinc oxide (InGaZnO), indium gallium oxide (InGaO), indium tin zinc oxide (ITZO), and aluminum zinc oxide (AlZnO).
  • InGaZnO indium gallium zinc oxide
  • InGaO indium gallium oxide
  • ITZO indium tin zinc oxide
  • AlZnO aluminum zinc oxide
  • the film layer structure of the display area includes a substrate, an inorganic buffer layer, an active semiconductor layer, an inorganic insulating layer provided on the substrate, a first metal wire, a second metal wire, a third metal wire, An organic flat layer, an anode layer, an organic opening layer, a light emitting material layer, a cathode layer, and an encapsulation layer.
  • the film structure of the transparent region includes a substrate, an inorganic buffer layer, an active semiconductor layer, an inorganic insulating layer provided on the substrate, a first high light-transmitting metal wire, an organic flat layer, and a second high Light-transmitting metal wire, organic opening layer, cathode layer, and encapsulation layer.
  • the film structure of the line change area includes a substrate, an inorganic buffer layer, an active semiconductor layer, an inorganic insulating layer provided on the substrate, a third metal wire, a first high-transmittance metal wire, A metal wire, an organic flat layer, a second highly transparent metal wire, an organic opening layer, a cathode layer, and a packaging layer.
  • the anode layer and the first metal wire are electrically connected through a via; the first metal wire and the active semiconductor layer are electrically connected through a via; the first high light-transmitting metal wire and The second high light-transmitting metal wire is connected to the third metal wire and the first metal wire through via holes and electrical connections respectively;
  • the substrate is composed of a flexible transparent material such as polyimide.
  • the organic flat layer and the organic opening layer are preferably composed of transparent organic materials.
  • the present invention further proposes an organic light-emitting diode (OLED) display panel, including:
  • a display area for displaying images includes a substrate, an inorganic buffer layer, an active semiconductor layer, an inorganic insulating layer, a first metal wire, a second metal wire, a third metal wire, and an organic flat Layer, anode layer, organic opening layer, luminescent material layer, cathode layer, and encapsulation layer; transparent area for placing devices, the film structure of the transparent area includes a substrate, an inorganic buffer layer, an active semiconductor layer, Inorganic insulating layer, first high light-transmitting metal wire, second high light-transmitting metal wire, organic flat layer, organic opening layer, cathode layer, and encapsulation layer; and a wire change area, located at the junction of the wire connection between the display area and the transparent area
  • the film layer structure of the line change area includes a substrate, an inorganic buffer layer, an active semiconductor layer, an inorganic insulating layer, a first metal wire, a first highly transparent metal wire, a second highly transparent metal wire
  • the high light-transmitting metal wire is composed of at least one of indium gallium zinc oxide (InGaZnO), indium gallium oxide (InGaO), indium tin zinc oxide (ITZO), and aluminum zinc oxide (AlZnO).
  • InGaZnO indium gallium zinc oxide
  • InGaO indium gallium oxide
  • ITZO indium tin zinc oxide
  • AlZnO aluminum zinc oxide
  • the anode layer and the first metal wire are electrically connected through vias in the display area.
  • the first metal wire and the active semiconductor layer are electrically connected through a via in the display area.
  • the first high light-transmitting metal wire and the second high light-transmitting metal wire are respectively electrically connected to the third metal wire and the first metal wire through via holes in the line changing area.
  • the substrate is composed of polyimide.
  • the organic flat layer and the organic opening layer are composed of transparent organic materials.
  • the present invention further proposes an organic light-emitting diode (OLED) display panel, including:
  • the display area is used to display images; the transparent area is used to place the device; and the wire change area is located at the junction of the display area and the transparent area wire connection; wherein, the metal wire from the display area is located at the line change
  • the region is electrically connected to the high-transmittance metal wire extending to the transparent region through vias; wherein, the high-transmittance metal wire is made of indium gallium zinc oxide (InGaZnO), indium gallium oxide (InGaO), and indium tin zinc oxide ( ITZO) and at least one of aluminum zinc oxide (AlZnO); and wherein, the film structure of the display area includes a substrate, an inorganic buffer layer, an active semiconductor layer, an inorganic insulating layer, a first metal wire, The second metal wire, the third metal wire, the organic flat layer, the anode layer, the organic opening layer, the light emitting material layer, the cathode layer, and the encapsulation layer.
  • the scheme adopted by the present invention can avoid complex winding, and is beneficial to improve the transparency of the transparent area, and can improve the uniformity of the high peripheral area of the panel. In addition, it can avoid the special-shaped cutting process, improve the screen ratio and reliability, reduce Small process flow, and significantly reduce production costs.
  • FIG. 2 is a schematic cross-sectional view of a panel according to a preferred embodiment of the present invention.
  • FIG. 1 is an organic light-emitting diode (Organic Light-Emitting) according to a preferred embodiment of the present invention Diode, OLED) configuration diagram of the display panel 10, including: display area 100 for displaying images; transparent area 102 for placing devices; and line change area 101, located at the junction of the display area 100 and the transparent area 102 wire connection Where; wherein, the metal wires of the display area 100 are electrically connected to the high light-transmitting metal wires in the line change area 101 through vias.
  • OLED Organic Light-Emitting diode
  • the high light-transmitting metal wire is composed of a metal material with high transparency or a thicker material.
  • the shape and size of the transparent area 102 are made to match the shape and size of the device to be placed below, and the device is specifically, for example, a front camera of a mobile phone, a distance sensor, a photosensitive element, and the like.
  • OLED 2 is an organic light-emitting diode (Organic Light-Emitting) according to a preferred embodiment of the present invention Diode (OLED) display panel schematic diagram, including: the film structure of the display area 100, the line change area 101, and the transparent area 102.
  • OLED Diode
  • the film structure of the display area 100 includes a substrate 14 and an inorganic buffer layer 15, an active semiconductor layer 16, an inorganic insulating layer 17, a first metal wire 11, and a second metal wire 12 provided on the substrate 14 ,
  • the third metal wire 13 the organic flat layer 18, the anode layer 19, the organic opening layer 21, the light emitting material layer 20, the cathode layer 22, and the encapsulation layer 23.
  • the substrate 14 is preferably composed of a flexible transparent material such as polyimide; the inorganic buffer layer 15 and the inorganic insulating layer 17 are preferably composed of silicon nitride or silicon oxide; the active semiconductor layer 16 is preferably composed of low-temperature polysilicon; the first metal wire 11 is preferably composed of titanium (Ti) or aluminum (Al); the second metal wire 12 and the third metal conductor 13 are particularly preferably composed of molybdenum (Mo ).
  • the cathode layer 22 is preferably composed of magnesium (Mg) silver (Ag) alloy material; the organic flat layer 18 and the organic opening layer 21 are preferably composed of transparent organic materials.
  • the film layer structure of the wire change area 101 includes: a substrate 14 and an inorganic buffer layer 15, an active semiconductor layer 16, an inorganic insulating layer 17, a third metal wire 13, and a first high permeability provided on the substrate 14
  • the film structure of the wire change area 101 reduces the light emitting material layer 20 and the anode layer 19, and shares the substrate 14, the inorganic buffer layer 15, and the display area 100.
  • a film structure such as an active semiconductor layer 16, an inorganic insulating layer 17, an organic flat layer 18, an organic opening layer 21, a cathode 22, and an encapsulation layer 23 is provided.
  • the first high light-transmitting metal wire 9 and the second high light-transmitting metal wire 10 are preferably composed of a metal material with high transparency or a material with a relatively thin film thickness, such as indium gallium zinc oxide (InGaZnO), indium oxide It consists of materials such as gallium (InGaO), indium tin zinc oxide (ITZO) or aluminum zinc oxide (AlZnO).
  • a metal material with high transparency or a material with a relatively thin film thickness such as indium gallium zinc oxide (InGaZnO), indium oxide It consists of materials such as gallium (InGaO), indium tin zinc oxide (ITZO) or aluminum zinc oxide (AlZnO).
  • the film structure of the transparent region 102 includes: a substrate 14 and an inorganic buffer layer 15, an active semiconductor layer 16, an inorganic insulating layer 17, an organic flat layer 18, an organic opening layer 21, a cathode provided on the substrate 14 Layer 22, and encapsulation layer 23.
  • the transparent area 102 shares the substrate 14, the inorganic buffer layer 15, the active semiconductor layer 16, the inorganic insulating layer 17, the organic flat layer 18, the organic opening layer 21, the cathode 22, and the encapsulation layer with the display area 100 and the wire change area 101 23 film structure.
  • the film layer structure shared by the display area 100, the line change area 101, and the transparent area 102 is fabricated in the same manufacturing process.
  • FIG. 3 is an enlarged schematic view of the line change area 101 near the transparent area 102 shown in FIG. 1.
  • the solution adopted by the present invention is: the position of the line change area 101 at the border of the display area 100 and the transparent area 102 will be derived from the
  • the metal wires in the display area 100 are electrically connected to the highly transparent metal wires extending to the transparent area 102 through vias.
  • the high-transmittance metal wire is specifically composed of at least one of indium gallium zinc oxide (InGaZnO), indium gallium oxide (InGaO), indium tin zinc oxide (ITZO), and aluminum zinc oxide (AlZnO).

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,包括:显示区、透明区、以及换线区。所述显示区用于显示影像;所述透明区,用于置放器件;所述换线区,位于显示区与透明区的导线连接交界处。其中,源自所述显示区的金属导线在所述换线区与延伸至透明区的高透光金属导线通过过孔电连接。

Description

高屏占比有机发光二极管显示面板 技术领域
本发明涉及显示技术领域，具体涉及一种有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板。
 背景技术
有机发光显示器装置具有许多优点，例如宽广的视角、高反应速度、轻薄的厚度以及低电力耗损，使有机发光显示器装置广泛地应用于各种电子设备上。
近来，追求高屏占比、极限超窄边框的「全面屏」显示屏，已成为有机发光二极管(Organic Light-Emitting Diode, OLED)显示屏领域的热点。「全面屏」的优势在于最大化的利用屏幕的显示面积，给使用者带来更好的视觉体验。
 技术问题
手机前上部的前置摄像头、环境光传感器、听筒和其它感光器件等的位置安放问题是「全面屏」设计的难点。使用异形切割是目前行业最常用做法，但该方法的切割流程复杂、封装可靠性差，因此，亟需提出一种避免异形切割的高屏占比有机发光二极管(Organic Light-Emitting Diode, OLED)显示屏设计。
 技术解决方案
为解决上述问题,本发明提出一种有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,包括:
显示区,用于显示影像;透明区,用于置放器件;以及换线区,位于显示区与透明区的导线连接交界处;其中,源自所述显示区的金属导线在所述换线区与延伸至透明区的高透光金属导线通过过孔电连接。
较佳地,所述高透光金属导线由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO) 以及氧化铝锌(AlZnO)中的至少一种所组成。
较佳地,所述显示区的膜层结构包括衬底，设置在衬底上的无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第二金属导线、第三金属导线、有机平坦层、阳极层、有机开口层、发光材料层、阴极层、以及封装层。
较佳地,所述透明区的膜层结构包括衬底，设置在衬底上的无机缓冲层、有源半导体层、无机绝缘层、第一高透光金属导线、有机平坦层、第二高透光金属导线、有机开口层、阴极层、以及封装层。
较佳地,所述换线区的膜层结构包括衬底，设置在衬底上的无机缓冲层、有源半导体层、无机绝缘层、第三金属导线、第一高透光金属导线、第一金属导线、有机平坦层、第二高透光金属导线、有机开口层、阴极层、以及封装层。
较佳地,所述阳极层和所述第一金属导线通过过孔电连接;所述第一金属导线和所述有源半导体层通过过孔电连接;所述第一高透光金属导线和第二高透光金属导线与所述第三金属导线和第一金属导线分别通过过孔及电连接;所述衬底由聚酰亚胺等柔性透明材料所组成。所述有机平坦层和有机开口层具体优选由透明有机材料所组成。
本发明另外提出一种有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,包括:
显示区,用于显示影像,所述显示区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第二金属导线、第三金属导线、有机平坦层、阳极层、有机开口层、发光材料层、阴极层、以及封装层;透明区,用于置放器件,所述透明区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一高透光金属导线、第二高透光金属导线、有机平坦层、有机开口层、阴极层、以及封装层;以及换线区,位于显示区与透明区的导线连接交界处,所述换线区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第一高透光金属导线、第二高透光金属导线、第三金属导线、有机平坦层、有机开口层、阴极层、以及封装层;其中,源自所述显示区的金属导线在所述换线区与延伸至所述透明区的高透光金属导线通过过孔电连接。
较佳地,所述高透光金属导线由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO)以及氧化铝锌(AlZnO)中的至少一种所组成。
较佳地,所述阳极层和所述第一金属导线在显示区通过过孔电连接。
较佳地,所述第一金属导线和所述有源半导体层在显示区通过过孔电连接。
较佳地,所述第一高透光金属导线和第二高透光金属导线在换线区分别与所述第三金属导线和第一金属导线通过过孔电连接。
较佳地,所述衬底由聚酰亚胺所组成。
较佳地,所述有机平坦层和有机开口层由透明有机材料所组成。
本发明另外提出一种有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,包括:
显示区,用于显示影像;透明区,用于置放器件;以及换线区,位于显示区与透明区的导线连接交界处;其中,源自所述显示区的金属导线在所述换线区与延伸至所述透明区的高透光金属导线通过过孔电连接;其中,所述高透光金属导线由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO) 以及氧化铝锌(AlZnO)中的至少一种所组成;及其中,所述显示区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第二金属导线、第三金属导线、有机平坦层、阳极层、有机开口层、发光材料层、阴极层、以及封装层。
 有益效果
本发明所采用的方案可以避免复杂绕线，并且有利提高所述透明区的透明度,以及可以提高面板高周边区域的均匀性，此外，可以免异形切割工艺、提高屏占比和可靠度、减小工艺流程、以及明显降低生产成本。
 附图说明
图1为根据本发明一较佳实施例的面板配置示意图；
图2为根据本发明一较佳实施例的面板剖面示意图；以及
图3为图1的透明区附近的换线区放大示意图。
 本发明的最佳实施方式
以下将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1为根据本发明一较佳实施例的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板10的配置示意图,包括:显示区100,用于显示影像;透明区102,用于置放器件;以及换线区101,位于显示区100与透明区102的导线连接交界处;其中,所述显示区100的金属导线在所述换线区101与高透光金属导线通过过孔电连接。
所述高透光金属导线由透明度高的金属材料或较薄膜厚的材料所组成。所述透明区102的形状和大小制作成与下方所欲置放器件的形状和大小相匹配，所述器件具体为例如手机前置摄像头、距离传感器、感光元件等。
图2为根据本发明一较佳实施例的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板的剖面示意图，包括:显示区100、换线区101、以及透明区102的膜层结构。
所述显示区100的膜层结构包括:衬底14，以及设置在衬底14上的无机缓冲层15、有源半导体层16、无机绝缘层17、第一金属导线11、第二金属导线12、第三金属导线13、有机平坦层18、阳极层19、有机开口层21、发光材料层20、阴极层22、以及封装层23。
所述衬底14具体优选由例如聚酰亚胺等柔性透明材料所组成；所述无机缓冲层15、无机绝缘层17具体优选由氮化硅或氧化硅类所组成；所述有源半导体层16具体优选由低温多晶硅所组成；所述第一金属导线11具体优选由钛(Ti)或铝(Al)所组成；所述第二金属导线12和第三金属导线13具体优选由钼(Mo)所组成。所述阴极层22具体优选由镁(Mg)银(Ag)合金材料所组成；所述有机平坦层18和有机开口层21优选由透明有机材料所组成。
所述换线区101的膜层结构包括:衬底14，以及设置在衬底14上的无机缓冲层15、有源半导体层16、无机绝缘层17、第三金属导线13、第一高透光金属导线9、第一金属导线11、有机平坦层18、第二高透光金属导线10、有机开口层21、阴极层22、以及封装层23。
相比于所述显示区100的膜层结构，所述换线区101的膜层结构减少发光材料层20和阳极层19，并且与所述显示区100共用衬底14、无机缓冲层15、有源半导体层16、无机绝缘层17、有机平坦层18、有机开口层21、阴极22以及封装层23等膜层结构。所述第一高透光金属导线9和所述第二高透光金属导线10具体优选由透明度高的金属材料或较薄膜厚的材料所组成，例如由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO) 或氧化铝锌(AlZnO)等材料所组成。
所述透明区102的膜层结构包括:衬底14，以及设置在衬底14上的无机缓冲层15、有源半导体层16、无机绝缘层17、有机平坦层18、有机开口层21、阴极层22、以及封装层23。
所述透明区102与显示区100和换线区101共用衬底14、无机缓冲层15、有源半导体层16、无机绝缘层17、有机平坦层18、有机开口层21、阴极22以及封装层23等膜层结构。
所述阳极层19和所述第一金属导线11通过过孔25电连接;所述第一金属导线11和所述有源半导体层16通过过孔24电连接;所述第一高透光金属导线9和第二高透光金属导线10与所述第三金属导线13和第一金属导线11分别通过过孔26及27电连接。
所述显示区100、换线区101、以及透明区102所共用的膜层结构是在同一制程中制作完成。
图3为图1所示的透明区102附近的换线区101放大示意图，本发明采用的方案为:在所述显示区100和透明区102交界的换线区101位置，将源自所述显示区100的金属导线通过过孔方式与延伸至透明区102的高透光金属导线电连接。所述高透光金属导线具体优选由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO) 以及氧化铝锌(AlZnO)中的至少一种所组成。
综上所述，虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种有机发光二极管(Organic Light-Emitting Diode,
    OLED)显示面板,包括:
    显示区,用于显示影像;
    透明区,用于置放器件;以及
    换线区,位于显示区与透明区的导线连接交界处;
    其中,源自所述显示区的金属导线在所述换线区与延伸至所述透明区的高透光金属导线通过过孔电连接。
  2. 如权利要求1所述的有机发光二极管(Organic Light-
    Emitting Diode, OLED)显示面板,其中,所述高透光金属导线由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO) 以及氧化铝锌(AlZnO)中的至少一种所组成。
  3. 如权利要求1所述的有机发光二极管(Organic Light-
    Emitting Diode, OLED)显示面板,其中,所述显示区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第二金属导线、第三金属导线、有机平坦层、阳极层、有机开口层、发光材料层、阴极层、以及封装层。
  4. 如权利要求1所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述换线区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第一高透光金属导线、第二高透光金属导线、第三金属导线、有机平坦层、有机开口层、阴极层、以及封装层。
  5. 如权利要求1所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述透明区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一高透光金属导线、第二高透光金属导线、有机平坦层、有机开口层、阴极层、以及封装层。
  6. 如权利要求3所述的有机发光二极管(Organic Light-
    Emitting Diode, OLED)显示面板,其中,所述阳极层和所述第一金属导线通过过孔电连接。
  7. 如权利要求3所述的有机发光二极管(Organic Light-
    Emitting Diode, OLED)显示面板,其中,所述第一金属导线和所述有源半导体层通过过孔电连接。
  8. 如权利要求4所述的有机发光二极管(Organic Light-
    Emitting Diode, OLED)显示面板,其中,所述第一高透光金属导线和第二高透光金属导线分别与所述第三金属导线和第一金属导线通过过孔电连接。
  9. 如权利要求3至5任一项所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述衬底由聚酰亚胺所组成。
  10. 如权利要求3至5任一项所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述有机平坦层和有机开口层由透明有机材料所组成。
  11. 一种有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,包括:
    显示区,用于显示影像,所述显示区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第二金属导线、第三金属导线、有机平坦层、阳极层、有机开口层、发光材料层、阴极层、以及封装层;
    透明区,用于置放器件,所述透明区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一高透光金属导线、第二高透光金属导线、有机平坦层、有机开口层、阴极层、以及封装层;以及
    换线区,位于显示区与透明区的导线连接交界处,所述换线区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第一高透光金属导线、第二高透光金属导线、第三金属导线、有机平坦层、有机开口层、阴极层、以及封装层;
    其中,源自所述显示区的金属导线在所述换线区与延伸至所述透明区的高透光金属导线通过过孔电连接。
  12. 如权利要求11所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述高透光金属导线由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO)以及氧化铝锌(AlZnO)中的至少一种所组成。
  13. 如权利要求11所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述阳极层和所述第一金属导线在显示区通过过孔电连接。
  14. 如权利要求11所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述第一金属导线和所述有源半导体层在显示区通过过孔电连接。
  15. 如权利要求11所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述第一高透光金属导线和第二高透光金属导线在换线区分别与所述第三金属导线和第一金属导线通过过孔电连接。
  16. 如权利要求11所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述衬底由聚酰亚胺所组成。
  17. 如权利要求11所述的有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,其中,所述有机平坦层和有机开口层由透明有机材料所组成。
  18. 一种有机发光二极管(Organic Light-Emitting Diode, OLED)显示面板,包括:
    显示区,用于显示影像;
    透明区,用于置放器件;以及
    换线区,位于显示区与透明区的导线连接交界处;
    其中,源自所述显示区的金属导线在所述换线区与延伸至所述透明区的高透光金属导线通过过孔电连接;
    其中,所述高透光金属导线由氧化铟镓锌(InGaZnO)、氧化铟镓(InGaO)、氧化铟锡锌(ITZO) 以及氧化铝锌(AlZnO)中的至少一种所组成;及
    其中,所述显示区的膜层结构包括衬底、无机缓冲层、有源半导体层、无机绝缘层、第一金属导线、第二金属导线、第三金属导线、有机平坦层、阳极层、有机开口层、发光材料层、阴极层、以及封装层。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109686762B (zh) * 2018-12-18 2021-03-16 武汉华星光电半导体显示技术有限公司 高屏占比有机发光二极管显示面板
CN110232892A (zh) * 2019-05-16 2019-09-13 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN110969935B (zh) * 2019-12-20 2022-02-22 京东方科技集团股份有限公司 一种阵列基板和显示装置
CN111384137A (zh) * 2020-03-06 2020-07-07 武汉华星光电半导体显示技术有限公司 显示面板以及显示面板的制造方法
CN111653576B (zh) * 2020-06-12 2023-10-27 合肥维信诺科技有限公司 阵列基板、显示面板以及显示装置
CN112186021B (zh) * 2020-09-30 2023-08-22 武汉天马微电子有限公司 显示面板及显示装置
CN112382238B (zh) * 2020-12-03 2022-04-15 云谷（固安）科技有限公司 阵列基板和显示装置
CN112542092B (zh) * 2020-12-08 2023-05-26 合肥维信诺科技有限公司 显示面板和显示装置
EP4141858A4 (en) * 2021-01-06 2023-08-23 BOE Technology Group Co., Ltd. DISPLAY PANEL AND DISPLAY DEVICE

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107783698A (zh) * 2015-04-01 2018-03-09 上海天马微电子有限公司 一种阵列基板、显示面板
CN108598115A (zh) * 2018-04-24 2018-09-28 武汉华星光电技术有限公司 Oled显示面板
CN108732841A (zh) * 2018-05-31 2018-11-02 厦门天马微电子有限公司 一种显示面板及其制备方法、显示装置
CN108919581A (zh) * 2018-06-29 2018-11-30 厦门天马微电子有限公司 一种显示面板及其制备方法、电子设备
CN109686762A (zh) * 2018-12-18 2019-04-26 武汉华星光电半导体显示技术有限公司 高屏占比有机发光二极管显示面板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372534B1 (en) * 1995-06-06 2002-04-16 Lg. Philips Lcd Co., Ltd Method of making a TFT array with photo-imageable insulating layer over address lines
JP2005005227A (ja) * 2003-06-16 2005-01-06 Hitachi Displays Ltd 有機ｅｌ発光表示装置
KR100787461B1 (ko) * 2006-11-10 2007-12-26 삼성에스디아이 주식회사 다층 구조의 애노드를 채용한 유기 발광 디스플레이 장치
KR102278603B1 (ko) * 2014-04-14 2021-07-19 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR102463886B1 (ko) * 2015-01-16 2022-11-07 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조 방법
KR102470258B1 (ko) * 2015-12-22 2022-11-24 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN106229297B (zh) * 2016-09-18 2019-04-02 深圳市华星光电技术有限公司 Amoled像素驱动电路的制作方法
WO2019047126A1 (zh) * 2017-09-07 2019-03-14 华为技术有限公司 一种有机发光显示oled屏幕及终端
CN108389879B (zh) * 2017-09-30 2021-06-15 云谷（固安）科技有限公司 显示屏以及电子设备
US10446633B2 (en) * 2017-10-24 2019-10-15 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Transparent OLED display with transparent storage capacitor and manufacturing method thereof
CN108091679B (zh) * 2017-12-27 2020-09-18 武汉华星光电半导体显示技术有限公司 柔性oled显示面板弯折区的走线结构、柔性oled显示面板
CN108520888B (zh) * 2018-04-02 2022-02-22 云谷（固安）科技有限公司 显示屏及其显示装置
CN108986678B (zh) * 2018-09-10 2020-11-24 上海天马微电子有限公司 一种显示面板及其制作方法、显示装置
US10937993B2 (en) * 2018-12-28 2021-03-02 Wuhan China Star Optoelectronics Semiconductor Display Co., Ltd. Organic light-emitting diode display panel having under-the-screen structure and display device thereof
CN111509136B (zh) * 2019-01-31 2021-12-28 武汉华星光电半导体显示技术有限公司 Oled显示面板
CN110120464B (zh) * 2019-05-27 2022-01-28 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107783698A (zh) * 2015-04-01 2018-03-09 上海天马微电子有限公司 一种阵列基板、显示面板
CN108598115A (zh) * 2018-04-24 2018-09-28 武汉华星光电技术有限公司 Oled显示面板
CN108732841A (zh) * 2018-05-31 2018-11-02 厦门天马微电子有限公司 一种显示面板及其制备方法、显示装置
CN108919581A (zh) * 2018-06-29 2018-11-30 厦门天马微电子有限公司 一种显示面板及其制备方法、电子设备
CN109686762A (zh) * 2018-12-18 2019-04-26 武汉华星光电半导体显示技术有限公司 高屏占比有机发光二极管显示面板

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